U.S. patent application number 12/399975 was filed with the patent office on 2009-07-02 for light emitting and image sensing device and apparatus.
Invention is credited to Paul Steven SCHRANZ.
Application Number | 20090166643 12/399975 |
Document ID | / |
Family ID | 46328977 |
Filed Date | 2009-07-02 |
United States Patent
Application |
20090166643 |
Kind Code |
A1 |
SCHRANZ; Paul Steven |
July 2, 2009 |
LIGHT EMITTING AND IMAGE SENSING DEVICE AND APPARATUS
Abstract
There is provided a light emitting and image sensing device for
a scene. The device is formed in a semiconductor substrate and
comprises a photosensor component for sensing an image of the
scene. The photosensor component is responsive to incident light
from the scene and provides an electrical signal representative of
the image. There is also a photoemitter component for emitting a
light signal representative of the electrical signal, and a
coupling component connecting the photosensor component with the
photoemitter component.
Inventors: |
SCHRANZ; Paul Steven; (Bowen
Island, CA) |
Correspondence
Address: |
PAUL STEVEN SCHRANZ
BOX G-30 RR1
BOWEN ISLAND
BC
V0N 1G0
CA
|
Family ID: |
46328977 |
Appl. No.: |
12/399975 |
Filed: |
March 8, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11775224 |
Jul 9, 2007 |
7521719 |
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12399975 |
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10917377 |
Aug 13, 2004 |
7242027 |
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11775224 |
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Current U.S.
Class: |
257/80 ; 257/88;
257/E27.134; 257/E27.135; 257/E33.076 |
Current CPC
Class: |
H01L 27/14621 20130101;
H01L 27/15 20130101; H01L 27/14645 20130101; H01L 27/14678
20130101; H01L 27/14647 20130101; H01L 27/14627 20130101 |
Class at
Publication: |
257/80 ; 257/88;
257/E27.134; 257/E27.135; 257/E33.076 |
International
Class: |
H01L 27/146 20060101
H01L027/146; H01L 33/00 20060101 H01L033/00 |
Claims
1. A light emitting and image sensing device for a scene, the
device formed in a semiconductor substrate, the device comprising:
a photosensor means for sensing an image of the scene, the
photosensor means being responsive to incident light from the scene
and providing an electrical signal representative of the image; a
photoemitter means for emitting a light signal representative of
the electrical signal; and a coupling means connecting the
photosensor means with the photoemitter means.
2. The device as claimed in claim 1, wherein the semiconductor
substrate is a silicon substrate, the photoemitter means and the
photosensor means being formed in the silicon substrate.
3. The device as claimed in claim 1, wherein the device further
includes a photoemitter control circuit operable to control an
emission of the light from the photoemitter means, the control
circuit being formed in the semiconductor substrate.
4. The device as claimed in claim 1, wherein an optical barrier
substantially optically separates the photoemitter means from the
photosensor means, the optical barrier being formed in the
semiconductor substrate.
5. The device as claimed in claim 1, wherein the photoemitter means
includes a light emitting diode.
6. The device as claimed in claim 2, wherein the photoemitter means
includes a PN junction implanted with a rare earth ion.
7. The device as claimed in claim 1, wherein the photoemitter means
includes a resonant cavity light emitting diode.
8. The device as claimed in claim 1, wherein the photoemitter means
includes a vertical cavity surface emitting laser.
9. The device as claimed in claim 2, wherein the photoemitter means
includes a MOS capacitor having a gate dielectric, the MOS
capacitor being formed on the silicon substrate, the gate
dielectric being implanted with a rare earth ion.
10. The device as claimed in claim 1, wherein the photosensor means
comprises: a matrix of rows and columns of photosensor structures
responsive to incident light upon the device; for each row in said
matrix, row select circuitry connected to each of the photosensor
structures in said row for selectively designating for outputting
output signals representative of the light sensed by said
photosensor structure; and for each column in said matrix, column
select circuitry connected to each of the photosensor structures in
said column for selectively designating for outputting output
signals representative of the light sensed by said photosensor
structures.
11. The device as claimed in claim 1, wherein the photosensor means
comprises: a plurality of select lines; a plurality of signal
lines; and a plurality of pixel elements, a pixel element
including: a photosensor structure; and switching means coupled
between the photosensor structure and one of the plurality of
signal lines, the switching means responsive to select signals on
one or more of the plurality of select lines for conveying a
photosensor signal between the photosensor structure and the one of
the plurality of signal lines.
12. A light emitting and image sensing device for a scene
comprising: a photosensor means for sensing an image of the scene,
the photosensor means being formed in a first semiconductor
substrate and being responsive to incident light from the scene and
providing an electrical signal representative of the image; and a
photoemitter means for emitting a light signal representative of
the light signal, the photoemitter means being formed in a second
semiconductor substrate; the second semiconductor substrate being
connected with the first semiconductor substrate.
13. The device as claimed in claim 12, wherein the first
semiconductor substrate is a silicon substrate.
14. The device as claimed in claim 12, wherein the device further
includes a photoemitter control circuit operable to control an
emission of the light from the photoemitter means, the control
circuit being formed in the first semiconductor substrate.
15. The device as claimed in claim 12, wherein the photoemitter
means includes a light emitting diode.
16. The device as claimed in claim 12, wherein the photoemitter
means includes a resonant cavity light emitting diode.
17. The device as claimed in claim 12, wherein the photoemitter
means includes a vertical cavity surface emitting laser.
18. The device as claimed in claim 12, wherein the photosensor
means comprises: a matrix of rows and columns of photosensor
structures responsive to incident light upon the device; for each
row in said matrix, row select circuitry connected to each of the
photosensor structures in said row for selectively designating for
outputting output signals representative of the light sensed by
said photosensor structure; and for each column in said matrix,
column select circuitry connected to each of the photosensor
structures in said column for selectively designating for
outputting output signals representative of the light sensed by
said photosensor structures.
19. The device as claimed in claim 12, wherein the photosensor
means comprises: a plurality of select lines; a plurality of signal
lines; and a plurality of pixel elements, a pixel element
including: a photosensor structure; and switching means coupled
between the photosensor structure and one of the plurality of
signal lines, the switching means responsive to select signals on
one or more of the plurality of select lines for conveying a
photosensor signal between the photosensor structure and the one of
the plurality of signal lines.
Description
RELATED APPLICATION
[0001] This application is a continuation application of U.S.
patent application Ser. No. 11/775,224, file Jul. 9, 2007, which in
turn was a continuation-in-part application of U.S. patent
application Ser. No. 10/917,377, filed Aug. 13, 2004 and having
first named inventor Paul Steven Schranz, and claims the priority
benefit thereof.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a novel image sensor
device, herein referred to as a light emitting and image sensing
device, and the apparatus in which it is used.
[0004] 2. Description of the Related Art
[0005] An embodiment of a conventional image sensor, in this case a
CMOS image sensor, is schematically illustrated in cross-section in
FIG. 1. A microlens 30 focuses incident light, or photons 32, on a
plurality of photodiodes 34 in a silicon substrate 36. Color
filters 38 filter photons of specific wavelengths so that each of
the photodiodes 34 collects photons within one of three ranges of
wavelengths, corresponding to red, green and blue light.
[0006] An embodiment of a conventional active pixel element in a
CMOS image sensor is illustrated in schematic view in FIG. 2. The
active pixel element comprises a photodiode and an active pixel
circuit indicated generally by reference numerals 34.2 and 40
respectively. The photodiode 34.2 provides a photosensor signal on
conductor 42. The photosensor signal on conductor 42 is read out
through a buffer transistor 44 onto a column bus 46 when a row
select transistor 48 is activated. A reset transistor 50 operates
to reset the photodiode 34.2 to a known state.
[0007] A schematic plan view of the conventional image sensor is
illustrated in FIG. 3. The conventional image sensor comprises a
matrix of rows and columns of pixel elements indicated generally by
reference numeral 52. Each of the pixel elements contains a
photosensing structure and corresponding support circuitry, such as
the photodiode 34.2 and active pixel circuit 40, respectively,
illustrated in FIG. 2.
[0008] There are many image sensor applications wherein a light
source is required to illuminate a scene, or an object, so that the
image sensor can capture one or more images. Examples of such
applications include but are not limited to video surveillance,
cell phones, digital cameras and digital video systems. During low
ambient light level conditions the light source is necessary for an
image to be captured at all.
[0009] An example of a conventional infrared video surveillance
camera is given by U.S. Pat. No. 6,642,955 by Brent Midgley et al.
Midgley describes a CCD type image sensor in a camera system that
switches electronically between infrared radiation sensing and
visible light sensing depending on ambient conditions. Furthermore,
the camera in Midgley makes use of either incandescent or LED type
illuminators. These illuminators are located external to the camera
system, but may be in a camera system enclosure along with the CCD
image sensor.
[0010] An example of a CMOS sensor used in cell phone is given by
U.S. Pat. No. 6,730,900 by Hsish et al. in which is described a
novel CMOS based active sensor array that, along with focusing
optics, is preferably incorporated into a cellular phone camera for
producing electronic images.
[0011] A disadvantage of the prior art is the lack of integration
of a light source for image illumination with the image sensor.
This has resulted in excessively large image sensor products for
the applications listed above. In the case of the video
surveillance camera, the illuminator is either in a separate
enclosure altogether, or is mounted inside the camera system
enclosure thereby increasing the size.
[0012] Another disadvantage of the lack of integration is the
inability to take advantage of an illumination apparatus. In a cell
phone, for example, where space is a constrained, it is often not
feasible to include the illumination apparatus. In this situation,
a cell phone camera can only be used in conditions where ambient
light is sufficient for its operation.
[0013] Furthermore, another disadvantage of the prior art is that
by lack of integration the power consumption of the above mentioned
products and applications is excessively large.
BRIEF SUMMARY OF INVENTION
[0014] In one aspect of the present invention there is provided a
light emitting and image sensing device for a scene. The device is
formed in a semiconductor substrate and comprises a photosensor
component for sensing an image of the scene. The photosensor
component is responsive to incident light from the scene and
provides an electrical signal representative of the image. There is
also a photoemitter component for emitting a light signal
representative of the electrical signal, and a coupling component
connecting the photosensor component with the photoemitter
component.
[0015] In another aspect of the present invention there is provided
a light emitting and image sensing device for a scene. The light
emitting and image sensing device is formed in a semiconductor
substrate and comprises a photoemitter means for illuminating the
scene with light, and a photosensor means for sensing an image of
the scene. The photosensor means is responsive to incident light
from the scene.
[0016] In another aspect of the invention there is provided a light
emitting and image sensing device that includes a photosensor
means. The photosensor means comprises a matrix of rows and columns
of photosensor structures responsive to incident light upon the
light emitting and image sensing device. For each row in the matrix
there is row select circuitry connected to each of the photosensor
structures in the row for selectively designating for outputting
output signals representative of the light sensed by the
photosensor structure. For each column in the matrix there is
column select circuitry connected to each of the photosensor
structures in the column for selectively designating for outputting
output signals representative of the light sensed by the
photosensor structures.
[0017] In another aspect of the invention there is provided a light
emitting and image sensing device having a photoemitter means. The
photoemitter means includes an array of photoemitter structures
operable to emit light from the device and a photoemitter control
means for controlling an emission of the light from the array of
photoemitter structures.
[0018] In another aspect of the invention there is provided a light
emitting and image sensing device having a photosensor means. The
photosensor means comprises a plurality of select lines, a
plurality of signal lines, and a plurality of pixel elements. The
pixel elements include a photosensor structure, and a switching
means coupled between the photosensor structure and one of the
plurality of signal lines. The switching means is responsive to
select signals on one or more of the plurality of select lines for
conveying a photosensor signal between the photosensor structure
and the one of the plurality of signal lines.
[0019] In another aspect of the present invention there is provided
a light emitting and image sensing device for a scene. The light
emitting and image sensing device includes a photosensor means for
sensing an image of the scene and a photoemitter means for
illuminating the scene with light. The photosensor means is formed
in a first semiconductor substrate and is responsive to incident
light from the scene. The photoemitter means is formed in a second
semiconductor substrate. The second semiconductor substrate is
attached to the first semiconductor substrate.
[0020] In another aspect of the present invention there is provided
a light emitting and image sensing device for a scene. The light
emitting and image sensing device includes a photosensor means for
sensing an image of the scene and a photoemitter means for
illuminating the scene with light. The photosensor means is formed
in a first semiconductor substrate and is responsive to incident
light from the scene. The photoemitter means is formed in a second
semiconductor substrate. The second semiconductor substrate is
attached to the first semiconductor substrate. The light emitting
and image sensing device further includes a photoemitter control
circuit operable to control an emission of the light from the
photoemitter means. The photoemitter control circuit is formed in
the first semiconductor substrate.
[0021] In another aspect of the present invention there is provided
a light emitting and image sensing device for a scene. The light
emitting and image sensing device includes a photosensor means for
sensing an image of the scene and a photoemitter means for
illuminating the scene with light. The photosensor means is formed
in a first semiconductor substrate and is responsive to incident
light from the scene. The photoemitter means is formed in a second
semiconductor substrate. The second semiconductor substrate is
attached to the first semiconductor substrate. The photosensor
means includes a matrix of rows and columns of photosensor
structures responsive to incident light upon the device. For each
row in the matrix there is row select circuitry connected to each
of the photosensor structures in the row for selectively
designating for outputting output signals representative of the
light sensed by said photosensor structure. For each column in the
matrix there is column select circuitry connected to each of the
photosensor structures in said column for selectively designating
for outputting output signals representative of the light sensed by
said photosensor structures.
[0022] In another aspect of the invention there is provided a light
emitting and image sensing device that is formed in a semiconductor
substrate. The light emitting and image sensing device comprises a
photoemitter operable to emit electromagnetic radiation from the
device, and a photosensor responsive to electromagnetic radiation
incident upon the device.
[0023] In another aspect of the invention there is provided a lens
housing for an image sensor type camera, the camera for generating
an image of a scene. The lens housing comprises a first light
channel for guiding an emission of light from the image sensor to
illuminate the scene, and a second light channel for guiding light
from the scene towards the image sensor.
[0024] In another aspect of the invention there is provided a
housing for a light emitting and image sensing device. The housing
comprises a first light channel for emitted light from the light
emitting and image sensing device to illuminate a scene, and a
second light channel for incident light from the scene towards the
light emitting and image sensing device.
[0025] In another aspect of the invention there is provided a
housing for a light emitting and image sensing device. The housing
comprises a first light channel for emitted light from the light
emitting and image sensing device to illuminate a scene, and a
second light channel for incident light from the scene towards the
light emitting and image sensing device. The second light channel
has an outer surface. The first and second light channels have a
common axis. The first light channel being formed around the outer
surface of the second light channel.
[0026] In another aspect of the invention there is provided, in
combination, a light emitting and image sensing device and a
housing. The housing has a first end where the light emitting and
image sensing device is disposed.
[0027] In another aspect of the invention there is provided a
method of illuminating a scene and sensing an image. The method
comprises the steps of emitting light from a light emitting and
image sensing device, channeling the emitted light along a first
channel, dispersing the light with a first lens towards the scene,
focusing incident light from the scene with a second lens,
channeling the focused light along a second channel towards the
light emitting and image sensing device, and sensing the image of
the scene with the focused light upon the light emitting and image
sensing device.
BRIEF DESCRIPTION OF DRAWINGS
[0028] The invention will be more readily understood from the
following description of preferred embodiments thereof given, by
way of example only, with reference to the accompanying drawings,
in which:
[0029] FIG. 1 is a schematic view in cross-section of a
conventional CMOS image sensor;
[0030] FIG. 2 is a schematic view of a conventional active pixel
element;
[0031] FIG. 3 is a schematic plan view of a conventional image
sensor;
[0032] FIGS. 4a-h are schematic plan views of embodiments of light
emitting and image sensing devices;
[0033] FIG. 5 is a schematic view in cross-section of an embodiment
of the light emitting and image sensing device in a silicon
substrate;
[0034] FIG. 6 is a schematic view in cross-section of another
embodiment of the light emitting and image sensing device in a
silicon substrate;
[0035] FIG. 7 is a broken-away schematic view in cross-section of
an embodiment of the light emitting and image sensing device
wherein a photoemitter is in a first semiconductor substrate and a
pixel element is in a second semiconductor substrate;
[0036] FIG. 8 is a schematic view in cross-section of another
embodiment of the light emitting and image sensing device wherein a
photoemitter is in a first semiconductor substrate and a pixel
element is in a second semiconductor substrate;
[0037] FIG. 9 is a partial schematic view of a matrix of active
pixel elements of the light emitting and image sensing device of
FIG. 5;
[0038] FIG. 10 is a schematic view of an active pixel element of
the light emitting and image sensing device of FIG. 5;
[0039] FIG. 11a-b are schematic views of embodiments of light
emitting and image sensing devices wherein an array of
photoemitters is connected to a photoemitter control means;
[0040] FIG. 12 is a schematic view in perspective of the light
emitting and image sensing devices of the embodiments of FIGS.
4a-c;
[0041] FIG. 13 is a schematic view in perspective of the light
emitting and image sensing devices of the embodiments of FIGS.
4e-g;
[0042] FIG. 14 is a partial schematic view in perspective of the
light emitting and image sensing device of the embodiment of FIG.
4h;
[0043] FIG. 15 is a schematic view in perspective of an embodiment
of a housing for the light emitting and image sensing device of
FIG. 4h;
[0044] FIG. 16 is a cross-sectional schematic view of an embodiment
of the invention including the housing of FIG. 15 taken along line
16-16', the light emitting and image sensing device of FIG. 4h, and
a substrate;
[0045] FIG. 17 is a schematic view in perspective of an embodiment
of a housing having adjacent light channels;
[0046] FIG. 18 is a cross-sectional schematic view of an embodiment
of the invention including the housing of FIG. 17 taken along line
18-18', either one of the light emitting and image sensing devices
of FIGS. 4e-g, and a substrate;
[0047] FIG. 19 is a schematic view in perspective of an embodiment
of a housing having light channels with a common axis;
[0048] FIG. 20 is a cross-sectional schematic view of an embodiment
of the invention including the housing of FIG. 19 taken along line
20-20', either one of the light emitting and image sensing devices
of FIGS. 4a-d, and a substrate;
[0049] FIG. 21 is a broken-away schematic view in cross-section of
a light emitting and image sensing device wherein a photoemitter is
in a first semiconductor substrate and a pixel element is in a
second semiconductor substrate according to another embodiment of
the present invention;
[0050] FIG. 22 is a side elevation view of a light emitting and
image sensing apparatus according to another embodiment of the
present invention;
[0051] FIG. 23 is a broken-away schematic view in cross-section of
a light emitting and image sensing device of the light emitting and
image sensing apparatus of FIG. 22; and
[0052] FIG. 24 is a broken-away schematic view in cross-section of
the light emitting and image sensing device of FIG. 23.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0053] Referring to FIG. 4a, a light emitting and image sensing
device, indicated generally by reference numeral 60, is formed in a
semiconductor and has a light emitting region 62 and an image
sensing region 64. The light emitting region 62 has a photoemitter
68. The photoemitter 68 operates to emit light, from a surface 66,
to illuminate a scene, or an object. The emitted light is in a
range of wavelengths, which can be in an infrared band, a visible
light band or an ultraviolet band of the electromagnetic spectrum.
Other bands of the electrical magnetic spectrum are, however,
possible as well.
[0054] The image sensing region 64 has a plurality of pixel
elements indicated generally by reference numeral 70. The pixel
elements 70 are responsive to incident light from the scene, or the
object. Each of the pixel elements 70 provides a photosensor signal
representative of the incident light in the area of the respective
pixel element. The plurality of pixel elements 70 can be arranged
in a matrix having rows and columns. An image sensor resolution is
determined by a first number of pixel elements in each row and by a
second number of pixel elements in each column.
[0055] Two further embodiments of the invention similar to the
embodiment shown in FIG. 4a are illustrated in FIGS. 4b and 4c
wherein like parts have like reference numerals with an additional
suffix. The embodiment illustrated in FIG. 4b includes a plurality
of photoemitters 68.b positioned in a photoemitter region 62.b
around an image sensing region 64.b. The embodiment illustrated in
FIG. 4c includes a plurality of photoemitters 68.c having a
photoemitter density comparable to a pixel element density.
[0056] Another embodiment of the invention is illustrated in FIG.
4d wherein like parts have like reference numerals with an
additional suffix. The light emitting and image sensing device 60.d
has a circular image sensing region 64.d surrounded by a
ring-shaped light emitting region 62.d. The light emitting region
62.d has a plurality of photoemitters 68.d. The image sensing
region 64.d has a plurality of pixel elements 70.d.
[0057] Three further embodiments of the invention are illustrated
in FIGS. 4e, 4f and 4g wherein like parts have like reference
numerals with an additional suffix. The embodiment illustrated in
FIG. 4e includes a light emitting region 62.e adjacent an image
sensing region 64.e. The light emitting region 62.e includes a
photoemitter 68.e and the image sensing region 64.e includes a
plurality of pixel elements 70.e. The plurality of pixel elements
70.e can be arranged in a matrix having rows and columns. The
embodiments illustrated in FIGS. 4f and 4g are similar to that of
FIG. 4e, both including a plurality of photoemitters 68.f and 68.g
respectively. The plurality of photoemitters 68.g has a
photoemitter density comparable to a pixel element density.
[0058] Another embodiment of the invention is illustrated in FIG.
4h wherein like parts have like reference numerals with an
additional suffix. In this embodiment a plurality of photoemitters
68.h are arranged in an alternating pattern with a plurality of
pixel elements 70.h. A photoemitter density can be different than a
pixel element density.
[0059] Another embodiment of the invention is illustrated in FIG.
5, wherein like parts have like reference numerals with an
additional suffix. A photoemitter indicated generally by reference
numeral 68.5 is separated from a pixel element indicated generally
by reference numeral 70.5. The photoemitter 68.5 and the pixel
element 70.5 are formed on and in a first layer of silicon 74. The
first layer of silicon is formed on top of a silicon oxide
(SiO.sub.2) layer 76, which is formed on top of a silicon substrate
78.
[0060] In this embodiment the photoemitter 68.5 is similar to a
semiconductor device for electro-optic applications described in
European Patent EP1210752 by Coffa et al., which is incorporated by
reference herein. An N.sup.- region 80, an N region 82 and a
P.sup.+ region 84 are formed in the silicon layer 74, and together
make a PN junction that under reverse bias emits light 92. One
skilled in the art will recognize that the PN junction is similar
to a base-collector junction of a bipolar transistor having a base
electrode 83, a collector electrode 85 and an emitter electrode 87.
A rare earth ions doped region 86, in this case Erbium, enables the
PN junction to emit light 92 having a wavelength around 1.54 um.
Using other rare earth ions allows light to be emitted having
different wavelengths. For instance, as a non-limiting example,
Terbium and Ytterbium provide light having a wavelength around 540
nm and 980 nm respectively.
[0061] A trench, indicated generally by reference numeral 88,
serves to reduce lateral light transmission from the rare earth
ions doped region 86 towards the pixel element 70.5. The trench 88
has a wall 90 upon which there is a film of silicon oxide
(SiO.sub.2) 91. Light 92 travelling from the rare earth ions doped
region 86 towards the pixel element 70.5 through the semiconductor
layer 74 must cross the wall 90 and travel through the film of
silicon oxide (SiO.sub.2) 91. The refractive index of silicon oxide
(SiO.sub.2) is less than the refractive index of silicon. This
causes light incident on the wall 90 having an angle of incidence,
from a normal to the wall, greater than a critical angle to undergo
total internal reflection. In other embodiments multiple trenches
having films of silicon oxide (SiO.sub.2) can be used to further
reduce lateral light transmission. The trench 88 has the advantage
of reducing phantom images in and preventing blurring of pixel
element 70.5 as caused by the above mentioned lateral light
transmission.
[0062] The light 92 emitted from the rare earth ions doped region
86 has random directions. The light 92 strikes a surface 104,
defined by a boundary between the silicon layer 74 and a silicon
oxide layer 106, at various angles of incidence to a normal to the
surface. Light 92 having the angle of incidence greater then the
critical angle will be internally reflected. It is advantageous,
then, that the light 92 be substantially normal to the surface 104
in order for maximum light emission from the surface. The goal is
to maximize an external quantum efficiency, a problem well known in
the art. In another embodiment, a photoemitter can be provided
similar to a device presented in "Si-based Resonant Cavity Light
Emitting Devices" by Castagna et al in SPIE Vol 5366, which is
incorporated by reference herein. This has the advantage that light
generated is substantially normal to surface 104. This has a
further advantage of reducing lateral light transmission through
the semiconductor layer 74 towards the pixel element 70.5.
[0063] The pixel element 70.5 of the present embodiment is commonly
known in the prior art, as disclosed by U.S. Pat. No. 5,965,875 by
Merril, which is incorporated by reference herein, and as such will
not be described in great detail here. The pixel element 70.5
includes a photosensor structure 72. The photosensor structure 72
is based on a triple well structure forming a first PN junction 94,
a second PN junction 96 and a third PN junction 98. Incident light
100 having different wavelengths penetrates the photosensor
structure 72 at varying depths depending on the wavelength. Red
light penetrates to around the depth of the first PN junction 94
where it produces a red photo current. Green light penetrates to
around the depth of the second PN junction 96 where it produces a
green photo current. Blue light penetrates to around the depth of
the third PN junction 96 where it produces a blue photo current. A
photocurrent sensor indicated generally by reference numeral 102
measures the red, green and blue photocurrents.
[0064] When the incident light 100 is in the near ultraviolet and
near infrared bands of the electromagnetic spectrum, the
photosensor structure 72 is still capable of functioning well. A
study performed by Alternate Vision Corporation indicates that the
photosensor structure 72 performs well under such conditions. The
results of the study were published in a paper titled "Infrared and
ultraviolet imaging with a CMOS sensor having layered photodiodes"
by Gilblom et al.
[0065] The pixel element 70.5 of this embodiment is advantageous
since it takes less area of surface 104 to sense red, green and
blue components of light 100. This allows increased resolution for
a given surface area. Nevertheless, other image sensor structures
formed in silicon can be used for the present invention. This
includes CMOS image sensor structures, such as in FIG. 1, and CCD
image sensor structures.
[0066] Referring now to FIG. 6, another embodiment of the invention
is illustrated wherein like parts have like reference numerals with
an additional suffix. The photoemitter 68.6 is in this case formed
using a PN junction diode, indicated generally by reference numeral
108, with un-annealed implant dislocations used to enhance light
emission. The structure of the PN junction diode 108 is described
in great detail in U.S. Pat. No. 6,710,376 by Worley, which is
incorporated by reference herein. The pixel element 70.6 is similar
to the pixel element 70.5 in FIG. 5.
[0067] The PN junction 108 is comprised of an N+ implant region
110, in a doped P type region 112, and a P+ implant 114 that is
used to make a good electrical connection between the P-type region
and metal terminals 116. A connection is made to the N+ implant
region 110 using the metal terminal 118.
[0068] Several light emitting devices are known in the prior art
that use III-V or II-VI semiconductors and compound semiconductors,
for example LEDs, resonant cavity light emitting diodes (RCLED) and
vertical cavity surface emitting lasers (VCSEL). It would be
advantageous to include these types of devices with a silicon based
image sensor.
[0069] Another embodiment of the invention is illustrated in FIG. 7
wherein like parts have like reference numerals with an additional
suffix. A first semiconductor substrate 120 is illustrated above a
second semiconductor substrate 122. The first semiconductor
substrate 120 is formed from III-V or II-VI compound semiconductor
materials, whereas the second semiconductor substrate 122 is formed
from silicon. A photoemitter 68.7 is formed in the first
semiconductor substrate 120, and a pixel element 70.7 is formed in
the second semiconductor substrate 122. The pixel element 70.7 is
similar to the pixel element 70.5 in FIG. 5.
[0070] In the present embodiment, the photoemitter 68.7 is similar
to a light emitting device disclosed in U.S. Pat. No. 5,493,577 by
Choquette et al, which is incorporated by reference herein, wherein
the light emitting device has a structure compatible for both
RCLEDs and VCSELs. The photoemitter 68.7 comprises a first
distributed Bragg reflector (DBR) 124, a second DBR 126, an active
region 128 and a control layer 130. The first and second DBRs 124
and 126 and the active region 128 form a resonator, or what is
commonly called a Fabry-Perot resonator. A substrate 132 attaches
the first DBR 124 to a first electrode 134. A second electrode 136
is deposited on the second DBR 126. Choquette describes the
operation of the photoemitter 68.7 for RCLED and VCSEL embodiments
in great detail.
[0071] Light 92.7 is emitted substantially along an axis and normal
to a surface 140. Since the index of refraction of the second DBR
126 is greater than that of air, the surrounding environment, this
has the advantage of minimizing the effects of internal reflection
at the surface 140. This increases an external quantum efficiency
of the photoemitter 68.7. Another advantage of the orientation of
light 92.7 to surface 140 is that light is substantially not
emitted towards the photosensor structure 72.7. This prevents the
formation of phantom images in and/or blurring of the pixel element
70.7. In this embodiment the light 92.7 has a wavelength of 980 nm
which is in the near infrared region.
[0072] The first semiconductor substrate 120 is attached to the
second semiconductor substrate 122. The first electrode 134 is
operatively connected to photoemitter control circuitry 138, which
can enable, disable and control the intensity of light emission of
the photoemitter 68.7. Attaching different types of semiconductor
substrates together, for instance GaAs and Si, and providing many
electrical connections between them is well known in the art. The
company Xanoptix Inc. provides such hybrid integrated circuit
technology.
[0073] In another embodiment, a light emitting and image sensing
device using a III-V compound semiconductor substrate and a silicon
substrate is illustrated in FIG. 8, wherein like parts have like
reference numerals with an additional suffix. In this embodiment,
the photoemitter 68.8, again, is formed in the first semiconductor
substrate 120.8, and the pixel element 70.8 is formed in a second
semiconductor substrate 122.8. The photoemitter 68.8 is similar in
structure to a VCSEL disclosed in U.S. Pat. No. 6,590,917 by
Nakayama et al., which is incorporated by reference herein. The
photoemitter 68.8 includes an n-type GaAs substrate 150, an
epitaxial n-type GaAs layer 152, an n-type DBR 154, an active layer
region 156, a p-type DBR 158, a first mode control layer 160, a
second mode control layer 162 and an electrode 164.
[0074] The photoemitter 68.8 is similar in structure to a VCSEL
disclosed in U.S. Pat. No. 6,590,917 by Nakayama et al. The
photoemitter 68.8 includes an n-type GaAs substrate 150, an
epitaxial n-type GaAs layer 152, an n-type DBR 154, an active layer
region 156, a p-type DBR 158, a first mode control layer 160, a
second mode control layer 162 and an electrode 164.
[0075] Light 92.8, again, is emitted substantially normal to a
surface 140.8 having the advantage of increasing an external
quantum efficiency and minimizing light emitted towards the
photosensor structure 72.8.
[0076] Referring back to FIGS. 4a-h, the light emitting and image
sensing devices 60 and 60b-h include the plurality of pixel
elements 70 and 70b-h respectively. Each one of the pixel elements
70 and 70b-h can be the pixel element 70.5 illustrated FIG. 5. In
another embodiment, the pixel element 70.5 illustrated in FIG. 5,
and similarly the pixel elements 70.6, 70.7 and 70.8 illustrated in
FIGS. 6, 7, and 8 respectively, can be arranged in a matrix
configuration as illustrated in FIG. 9, wherein like parts have
like reference numerals with an additional suffix. Four such pixel
elements 70.9 are illustrated in FIG. 9 in a matrix having two rows
and two columns (2.times.2), however, there may be any number of
rows and columns. Each pixel element 70.9 comprises a photosensor
structure and an active pixel circuit indicated generally by
reference numeral 72.9 and 170 respectively. The pixel element 70.9
is further illustrated in FIG. 10, wherein the active pixel circuit
170 is presented in greater detail. The operation of the pixel
elements 70.9 is described in great detail in Merril.
[0077] Again, referring back to FIGS. 4b-d and 4f-h, the light
emitting and image sensing devices 60b-d and 60f-h include a
plurality of photoemitters 68b-d and 68f-h respectively. In another
embodiment, a plurality of photoemitters 68.11 in a light emitting
and image sensing device is controlled by a photoemitter controller
138.11 as illustrated in FIGS. 11a-b, wherein like parts have like
reference numerals with an additional suffix. The photoemitter
controller 138.11 enables the photoemitters 68.11 to emit light,
disables the emission of light and controls the intensity of
emitted light. The photoemitter controller 138.11 can be an
adjustable current source, for example, which is well known in the
art. The light emitting and image sensing device includes the
photoemitter controller 138.11. In other embodiments, the
photoemitter control means 138.11 can be external of a light
emitting and image sensing device. In this case, the photoemitters
68.11 are connected to the photoemitter controller 138.11 by an
electrical connector for example a connecting pin, or pad.
[0078] Referring back to FIG. 5, and similarly with FIGS. 6, 7 and
8, the trench 88 operates to reduce light transmission from the
photoemitter 68.5 towards the pixel element 70.5. In another
embodiment of the invention illustrated in FIG. 12, wherein like
parts have like reference numerals with an additional suffix, a
trench 88.12 separates two regions in a semiconductor layer 74.12,
for instance a silicon layer. The trench 88.12 extends from a
surface 172 to a boundary surface 174 between the semiconductor
layer 74.12 and a layer 78.12, for instance a silicon oxide
(SiO.sub.2) layer. A light emitting region 62.12 and an image
sensing region 64.12 correspond to the corresponding regions in the
light emitting and image sensing devices 60, 60.b and 60.c of FIGS.
4a-c respectively. The trench 88.12 serves to substantially reduce
light transmission from the light emitting region 62.12 through the
semiconductor layer 74.12 towards the image sensing region 64.12.
When the semiconductor layer 74.12 is silicon (or doped silicon)
the trench 88.12 can have a wall, next to the light emitting region
62.12, which has a film of silicon oxide (SiO.sub.2) thereon.
[0079] In another embodiment of the invention illustrated in FIG.
13, wherein like parts have like reference numerals with an
additional suffix, a trench 88.13 in a semiconductor substrate
74.13 separates a light emitting region 62.13 and an image sensing
region 64.13. The light emitting region 62.13 and the image sensing
region 64.13 correspond to the corresponding regions in the light
emitting and image sensing devices 60e-g of FIGS. 4e-g
respectively. Again, the trench 88.13 serves to substantially
reduce light transmission from the light emitting region 62.13
through the semiconductor layer 74.13 towards the image sensing
region 64.13.
[0080] FIG. 14 illustrates another embodiment of the invention,
wherein like parts have like reference numerals with an additional
suffix. A plurality of trenches 88.14 in a semiconductor substrate
74.14 separate a plurality of light emitting regions 62.14 from an
image sensing region 64.14. The plurality of light emitting regions
62.14 contain photoemitters corresponding to the photoemitters 68.h
of the light emitting and image sensing device 60.h of FIG. 4h. The
image sensing region 64.14 contains a plurality of pixel elements
corresponding to the pixel elements 70.h of the light emitting and
image sensing device 60h of FIG. 4h.
[0081] Another embodiment of the invention is illustrated in FIGS.
15 and 16, wherein like parts have like reference numerals with an
additional suffix. Referring to FIG. 16 first, a light emitting and
image sensing device 60.16 is mounted on a substrate 182, for
instance a printed circuit board (PCB), and a single light channel
housing 180 is mounted to the substrate overtop the light emitting
and image sensing device. The light emitting and image sensing
device 60.16 in this embodiment can be the device 60.h illustrated
in FIG. 4h.
[0082] Referring to FIGS. 15 and 16, the single channel housing 180
has a first end 184 and a second end 186 and a light channel 185. A
lens 188 is attached at the first end 184. The first and second
ends 184 and 186 can have different shapes, for instance circular,
square or rectangular. The light channel 185 has an inner surface
187. The inner surface 187 can be shaped such that at the first end
184 it is one shape, for instance annular, and at the second end
186 it is a second shape, for instance square, with a smooth
transformation of the inner surface between the ends 184 and
186.
[0083] Another embodiment of the invention is illustrated in FIGS.
17 and 18, wherein like parts have like reference numerals with an
additional suffix. Referring to FIG. 18 first, a light emitting and
image sensing device 60.18 is mounted on a substrate 182.18, and an
adjacent light channel housing 180.18 is mounted to the substrate
overtop the light emitting and image sensing device. The light
emitting and image sensing device 60.18 in this embodiment can be
either one of the devices 60.e, 60.f and 60.g illustrated in FIGS.
4e, 4f and 4g respectively.
[0084] Referring to FIGS. 17 and 18, the adjacent light channel
housing 180.18 has a first light channel 190 adjacent a second
light channel 192. The first light channel 190 has opposite ends
194 and has a lens 198 attached at one end thereof. The lens 198
can be biconcave as well as other types of diverging lenses. Light
from a light emitting region 62.18 of the light emitting and image
sensing device 60.18 travels through lens 198 towards a scene, or
an object. The lens 200 can be biconvex as well as other types of
converging lenses. The opposite ends 194 can have different shapes,
for instance circular, rectangular or square. The second light
channel has opposite ends 196 and has a lens 200 attached at one
end thereof. Light from the scene or the object travels through
lens 200 towards an image sensing region 64.18 of the light
emitting and image sensing device 60.18. The opposite ends 196 can
have different shapes, for instance circular, rectangular or
square.
[0085] Another embodiment of the invention is illustrated in FIGS.
19 and 20, wherein like parts have like reference numerals with an
additional suffix. Referring to FIG. 20 first, a light emitting and
image sensing device 60.20 is mounted on a substrate 182.20, and a
dual light channel housing 180.20 is mounted to the substrate
overtop the light emitting and image sensing device. The light
emitting and image sensing device 60.20 in this embodiment can be
either of the devices 60, 60.b and 60.c of FIGS. 4a, 4b and 4c
respectively.
[0086] Referring to FIGS. 19 and 20, the dual light channel housing
180.20 has a first light channel 190.20, having an axis 191, and a
second light channel 192.20 having the same axis 191. The first
light channel has opposite ends 194.20 and has a lens 198.20
attached at one end thereof. The lens 198.20 can be biconcave as
well as other types of diverging lenses. Light from a light
emitting region 62.20 of the light emitting and image sensing
device 60.20 travels through the lens 198.20 and towards a scene,
or an object. The opposite ends 194.20 can have different shapes,
for instance circular, rectangular or square. The second light
channel has opposite ends 196.20 and has a lens 200.20 attached at
one end thereof. The lens 200.20 can be biconvex as well as other
types of converging lenses. Light from the scene, or the object,
travels through the lens 200.20 towards an image sensing region
64.20 of the light emitting and image sensing device 60.20. The
opposite ends 196.20 can have different shapes, for instance
circular, rectangular or square. Typically, the shapes of the
opposite ends 194.20 of the first light channel 190.20 correspond
to the shapes of the opposite ends 196.20 of the second light
channel 192.20.
[0087] Another embodiment of the invention is illustrated in FIG.
21 wherein like parts to previous embodiments have like reference
numerals with an additional suffix `21`. A first semiconductor
substrate 120.21 is illustrated above a second semiconductor
substrate 122.21. The first semiconductor substrate 120.21 can be
formed from III-V or II-VI compound semiconductor materials, or
organic polymers, whereas the second semiconductor substrate 122.21
is formed from silicon. A photoemitter 68.21 is formed in the first
semiconductor substrate 120.21, and a pixel element 70.21 is formed
in the second semiconductor substrate 122.21. The pixel element
70.21 is similar to the pixel element 70.5 in FIG. 5. The
photoemittier 68.21 can be in the form of an infrared LED, an
organic LED, or an RGB LED.
[0088] Another embodiment of the present invention is illustrated
in FIGS. 22, 23 and 24 wherein like parts to previous embodiments
have like reference numerals with an additional suffix `22`. There
is a light emitting and image sensing device 60.22 connected with a
printed circuit board 212. The light emitting and image sensing
device 60.22 has a plurality of pixel elements 70.22 on one side of
the device 60.22. The pixel elements 70.22 transform image light
into electrical signals. On the opposite side of the device 60.22
is a photoemitter 210. The photoemitter 210 is electrically coupled
to the pixel elements 70.22, however other forms of coupling such
as optical coupling can be used. The photoemitter 210 sequentially
emits light signals representative of respective ones of the
electrical signals of the pixel elements 70.22. In other
embodiments, the electrical signals of the pixel elements 70.22 can
be encoded into an encoded signal, which can be emitted in the form
of an encoded light signal by the photoemitter 210. The
photoemitter 210 transfers the electrical image captured by the
device 60.22 off the device into an optical coupler 216 through a
channel 214 in the printed circuit board 212. The optical coupler
216 is connected with a fiber optic cable 218 which carries the
light signals generated by the photoemitter 210 to a remote
destination.
[0089] Referring to FIG. 24, a more detailed description of the
light emitting and image sensing device is now given. A first
semiconductor substrate 122.22 is illustrated above a second
semiconductor substrate 120.22. The first semiconductor substrate
122.22 is formed from silicon. The second semiconductor substrate
120.22 can be formed from III-V or II-VI compound semiconductor
materials, or organic polymers. A pixel element 70.22 is formed in
the first semiconductor substrate 122.22. The pixel element 70.22
is similar to the pixel element 70.5 in FIG. 5, however other pixel
element structures are possible. A photoemitter 210 is formed in
the second semiconductor substrate 120.22. The photoemittier 210
can be in the form of an infrared LED, an RCLED, or a VCSEL, as
described previously, but other forms are possible as well. The
pixel elements 70.22 can be arranged in a matrix configuration as
illustrated in FIG. 9 and described previously. Each of the pixel
elements 70.22 is similar to the pixel element illustrated in FIG.
10 and described previously. Note that other pixel element
configurations and structures are possible, and this example is not
intended to limit the invention. The photoemitter 210 can include a
photoemitter controller, similar to that illustrated in FIG. 11a or
11b, and described earlier, however other photoemitter controllers
are possible. Note that in other embodiments the photoemitter 210
can be formed in a silicon layer 78.22 of the first semiconductor
substrate 122.22, e.g. similar to the photoemitter in FIGS. 5 and
6.
[0090] As will be apparent to those skilled in the art,
modifications can be made to the above-described invention within
the scope of the appended claims.
* * * * *