U.S. patent application number 12/242713 was filed with the patent office on 2009-06-11 for method for electrochemically fabricating three-dimensional structures including pseudo-rasterization of data.
This patent application is currently assigned to University of Southern California. Invention is credited to Adam L. Cohen, Jeffrey A. Thompson.
Application Number | 20090145767 12/242713 |
Document ID | / |
Family ID | 34840412 |
Filed Date | 2009-06-11 |
United States Patent
Application |
20090145767 |
Kind Code |
A1 |
Cohen; Adam L. ; et
al. |
June 11, 2009 |
Method for Electrochemically Fabricating Three-Dimensional
Structures Including Pseudo-Rasterization of Data
Abstract
Some embodiments of the invention are directed to techniques for
electrochemically fabricating multi-layer three-dimensional
structures where selective patterning of at least one or more
layers occurs via a mask which is formed using data representing
cross-sections of the three-dimensional structure which has been
modified to place it in a polygonal form which defines only regions
of positive area. The regions of positive area are regions where
structural material is to be located or regions where structural
material is not to be located depending on whether the mask will be
used, for example, in selectively depositing a structural material
or a sacrificial material. The modified data may take the form of
adjacent or slightly overlapped relative narrow rectangular
structures where the width of the structures is related to a
desired formation resolution. The spacing between centers of
adjacent rectangles may be uniform or may be a variable. The data
modification may also include the formation of duplicate copies of
an original structure, scaled copies, mirrored copies, rotated
copies, complementary copies, and the like.
Inventors: |
Cohen; Adam L.; (Los
Angeles, CA) ; Thompson; Jeffrey A.; (Los Angeles,
CA) |
Correspondence
Address: |
MICROFABRICA INC.;ATT: DENNIS R. SMALLEY
7911 HASKELL AVENUE
VAN NUYS
CA
91406
US
|
Assignee: |
University of Southern
California
|
Family ID: |
34840412 |
Appl. No.: |
12/242713 |
Filed: |
September 30, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11028943 |
Jan 3, 2005 |
7430731 |
|
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12242713 |
|
|
|
|
60534185 |
Dec 31, 2003 |
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Current U.S.
Class: |
205/135 ;
205/118 |
Current CPC
Class: |
C25D 1/003 20130101;
C25D 5/022 20130101; C25D 5/02 20130101; B33Y 50/02 20141201; B33Y
10/00 20141201; B33Y 50/00 20141201; C25D 5/10 20130101 |
Class at
Publication: |
205/135 ;
205/118 |
International
Class: |
C25D 5/02 20060101
C25D005/02 |
Claims
1. A process for forming a multilayer three-dimensional structure
from at least one structural material and at least one sacrificial
material, comprising: (a) providing a substrate; (b) depositing a
first material on the substrate, which is either a structural
material or a sacrificial material; (c) depositing a second
material on the substrate to regions not occupied by the first
material, wherein the second material is the other of the
structural material or the sacrificial material; (d) planarizing
the first and second materials to define a surface of the first
layer; (e) repeating the operations of steps (b)-(d) a plurality of
times to form a plurality of successive layers wherein each
successive layer is formed on and adhered to a previously formed
layer; (f) after formation of the plurality of layers, removing the
sacrificial material from the structural material on a plurality of
layers such that the structure, comprising the structural material,
is released from the sacrificial material; wherein the process
additionally comprises: (g) providing cross-sectional data
descriptive of a plurality of cross-sections of the
three-dimensional structure; (h) processing the cross-sectional
data to derive modified cross-sectional data comprising polygons,
where each individual polygon encloses only a positive area; (i)
using the modified cross-sectional data during formation of at
least one of the layers of the three-dimensional structure.
2. The process of claim 1 wherein the providing cross-sectional
data comprises: (j) providing data descriptive of the
three-dimensional structure; and (b) processing the data to derive
cross-sectional data descriptive of a plurality of cross-sections
of the three-dimensional structure.
3. The process of claim 1 wherein the using the modified
cross-sectional data comprises using the modified cross-sectional
data in a process for forming a patterned adhered mask that is used
during the formation of at least one layer.
4. The process of claim 1 wherein the depositing of the first
material during the formation of a layer comprises selectively
depositing the first material.
5. The process of claim 1 wherein the depositing of the first
material during the formation of a layer comprises selective
etching a void into the substrate or previously deposited
material.
6. The process of claim 1 wherein the processing of the
cross-sectional data comprises deriving a plurality of adjoining
rectangular structures.
7. The process of claim 6 wherein the rectangular structures are
laid out with their lengths extending along a series of parallel
lines.
8. The process of claim 7 wherein the parallel lines are spaced
from consecutive lines by a width and a width of the rectangles is
equal to the width between the consecutive lines.
9. The process of claim 7 wherein the parallel lines are spaced
from consecutive lines by a width and a width of the rectangles is
greater than the width between the consecutive lines.
10. The process of claim 7 wherein the parallel lines are spaced
from consecutive lines by a width and a width of the rectangles is
less than the width between the consecutive lines.
11. The process of claim 7 wherein the parallel lines are spaced
from consecutive lines by a width which is a variable.
12. The process of claim 11 wherein the variable width is
automatically selected by a predefined algorithm which is at least
in part based on an angle of contact between a boundary line and a
line collinear with a length of the rectangle.
13. The process of claim 1 wherein the polygons define regions
where material forming part of the structure is to be located.
14. The process of claim 1 wherein the polygons define regions
where material forming part of the structure is not to be
located.
15. The process of claim 1 wherein the polygons define regions
which have been boundary compensated.
16. The process of claim 3 wherein the mask defines multiple copies
of the structure to be formed.
17. The process of claim 14 wherein the processing of the
cross-sectional data for at least one copy of a structure to be
formed, comprises processing of link data and attribute data,
wherein the link data provides access to a single copy of the data
specific to an existing structure and where attribute data
comprises one or more of (1) location data for placement of the
copy, (2) offset data for placement of the copy, (3) rotational
information for orienting the copy, (4) mirroring information for
configuring the copy, and/or (5) scaling information for sizing the
copy.
18. The process of claim 14 wherein a least one of the multiple
copies is defined as a complementary pattern of at least one of (1)
a cross-section of the structure to be formed, (2) a scaled version
of a cross-section of the structure, (3) a mirrored version of a
cross-section of the structure, or (4) a boundary compensated
version of the structure.
19. The process of claim 3 wherein the using of the modified
cross-sectional data comprises using the modified data to produce
at least one photomask that is used in a process for forming a
patterned adhered mask.
20. The process of claim 3 wherein the using of the modified
cross-sectional data comprises using the modified data to control a
relative motion of a scanning laser beam and a mask material to
form a patterned adhered mask.
21. A process for forming a selective pattern of deposited
material, comprising: (a) providing cross-sectional data
descriptive of a patterned deposit to be formed; (b) processing the
cross-sectional data to derive modified cross-sectional data
comprising polygons, where each individual polygon encloses only a
positive area; (c) using the modified cross-sectional data during
formation of the selective patterning of deposited material; (d)
providing a substrate; and (e) depositing and patterning the
material on the substrate.
Description
RELATED APPLICATION DATA
[0001] This application is a continuation of U.S. patent
application Ser. No. 11/028,943 (Microfabrica Docket No.
P-US131-A-SC), filed Jan. 3, 2005 which in turn claims benefit of
U.S. Provisional Patent Application No. 60/534,185, filed Dec. 31,
2003. Theses referenced applications are incorporated herein by
reference.
FIELD OF THE INVENTION
[0002] Embodiments of the present invention relate generally to the
field of electrochemical fabrication and the associated formation
of three-dimensional structures (e.g. microscale or mesoscale
structures). In particular, some embodiments of the invention
relate to manipulations of data representing one or more
three-dimensional structures to derive cross-sectional data that
includes boundaries that define regions of positive areas only and
more particularly some embodiments are directed to deriving such
data where the data takes the form of a plurality of adjacent and
similarly oriented, elongated rectangular structures.
BACKGROUND OF THE INVENTION
[0003] A technique for forming three-dimensional structures (e.g.
parts, components, devices, and the like) from a plurality of
adhered layers was invented by Adam L. Cohen and is known as
Electrochemical Fabrication. It is being commercially pursued by
Microfabrica.RTM. Inc. (formerly MEMGen Corporation) of Van Nuys,
Calif. under the name EFAB.RTM.. This technique was described in
U.S. Pat. No. 6,027,630, issued on Feb. 22, 2000. This
electrochemical deposition technique allows the selective
deposition of a material using a unique masking technique that
involves the use of a mask that includes patterned conformable
material on a support structure that is independent of the
substrate onto which plating will occur. When desiring to perform
an electrodeposition using the mask, the conformable portion of the
mask is brought into contact with a substrate while in the presence
of a plating solution such that the contact of the conformable
portion of the mask to the substrate inhibits deposition at
selected locations. For convenience, these masks might be
generically called conformable contact masks; the masking technique
may be generically called a conformable contact mask plating
process. More specifically, in the terminology of Microfabrica.RTM.
Inc. (formerly MEMGen Corporation) of Van Nuys, Calif. such masks
have come to be known as INSTANT MASKS.TM. and the process known as
INSTANT MASKING.TM. or INSTANT MASK.TM. plating. Selective
depositions using conformable contact mask plating may be used to
form single layers of material or may be used to form multi-layer
structures. The teachings of the '630 patent are hereby
incorporated herein by reference as if set forth in full herein.
Since the filing of the patent application that led to the above
noted patent, various papers about conformable contact mask plating
(i.e. INSTANT MASKING) and electrochemical fabrication have been
published:
[0004] (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and
P. Will, "EFAB: Batch production of functional, fully-dense metal
parts with micro-scale features", Proc. 9th Solid Freeform
Fabrication, The University of Texas at Austin, p 161, August
1998.
[0005] (2) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and
P. Will, "EFAB: Rapid, Low-Cost Desktop Micromachining of High
Aspect Ratio True 3-D MEMS", Proc. 12th IEEE Micro Electro
Mechanical Systems Workshop, IEEE, P 244, January 1999.
[0006] (3) A. Cohen, "3-D Micromachining by Electrochemical
Fabrication", Micromachine Devices, March 1999.
[0007] (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld,
and P. Will, "EFAB: Rapid Desktop Manufacturing of True 3-D
Microstructures", Proc. 2nd International Conference on Integrated
MicroNanotechnology for Space Applications, The Aerospace Co.,
April 1999.
[0008] (5) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld,
and P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal
Microstructures using a Low-Cost Automated Batch Process", 3rd
International Workshop on High Aspect Ratio MicroStructure
Technology (HARMST'99), June 1999.
[0009] (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld,
and P. Will, "EFAB: Low-Cost, Automated Electrochemical Batch
Fabrication of Arbitrary 3-D Microstructures", Micromachining and
Microfabrication Process Technology, SPIE 1999 Symposium on
Micromachining and Microfabrication, September 1999.
[0010] (7) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld,
and P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal
Microstructures using a Low-Cost Automated Batch Process", MEMS
Symposium, ASME 1999 International Mechanical Engineering Congress
and Exposition, November, 1999.
[0011] (8) A. Cohen, "Electrochemical Fabrication (EFABTM)",
Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC
Press, 2002.
[0012] (9) Microfabrication--Rapid Prototyping's Killer
Application", pages 1-5 of the Rapid Prototyping Report, CAD/CAM
Publishing, Inc., June 1999.
[0013] The disclosures of these nine publications are hereby
incorporated herein by reference as if set forth in full
herein.
[0014] The electrochemical deposition process may be carried out in
a number of different ways as set forth in the above patent and
publications. In one form, this process involves the execution of
three separate operations during the formation of each layer of the
structure that is to be formed:
[0015] 1. Selectively depositing at least one material by
electrodeposition upon one or more desired regions of a
substrate.
[0016] 2. Then, blanket depositing at least one additional material
by electrodeposition so that the additional deposit covers both the
regions that were previously selectively deposited onto, and the
regions of the substrate that did not receive any previously
applied selective depositions.
[0017] 3. Finally, planarizing the materials deposited during the
first and second operations to produce a smoothed surface of a
first layer of desired thickness having at least one region
containing the at least one material and at least one region
containing at least the one additional material.
[0018] After formation of the first layer, one or more additional
layers may be formed adjacent to the immediately preceding layer
and adhered to the smoothed surface of that preceding layer. These
additional layers are formed by repeating the first through third
operations one or more times wherein the formation of each
subsequent layer treats the previously formed layers and the
initial substrate as a new and thickening substrate.
[0019] Once the formation of all layers has been completed, at
least a portion of at least one of the materials deposited is
generally removed by an etching process to expose or release the
three-dimensional structure that was intended to be formed.
[0020] The preferred method of performing the selective
electrodeposition involved in the first operation is by conformable
contact mask plating. In this type of plating, one or more
conformable contact (CC) masks are first formed. The CC masks
include a support structure onto which a patterned conformable
dielectric material is adhered or formed. The conformable material
for each mask is shaped in accordance with a particular
cross-section of material to be plated. At least one CC mask is
needed for each unique cross-sectional pattern that is to be
plated.
[0021] The support for a CC mask is typically a plate-like
structure formed of a metal that is to be selectively electroplated
and from which material to be plated will be dissolved. In this
typical approach, the support will act as an anode in an
electroplating process. In an alternative approach, the support may
instead be a porous or otherwise perforated material through which
deposition material will pass during an electroplating operation on
its way from a distal anode to a deposition surface. In either
approach, it is possible for CC masks to share a common support,
i.e. the patterns of conformable dielectric material for plating
multiple layers of material may be located in different areas of a
single support structure. When a single support structure contains
multiple plating patterns, the entire structure is referred to as
the CC mask while the individual plating masks may be referred to
as "submasks". In the present application such a distinction will
be made only when relevant to a specific point being made.
[0022] In preparation for performing the selective deposition of
the first operation, the conformable portion of the CC mask is
placed in registration with and pressed against a selected portion
of the substrate (or onto a previously formed layer or onto a
previously deposited portion of a layer) on which deposition is to
occur. The pressing together of the CC mask and substrate occur in
such a way that all openings, in the conformable portions of the CC
mask contain plating solution. The conformable material of the CC
mask that contacts the substrate acts as a barrier to
electrodeposition while the openings in the CC mask that are filled
with electroplating solution act as pathways for transferring
material from an anode (e.g. the CC mask support) to the
non-contacted portions of the substrate (which act as a cathode
during the plating operation) when an appropriate potential and/or
current are supplied.
[0023] An example of a CC mask and CC mask plating are shown in
FIGS. 1A-1C. FIG. 1A shows a side view of a CC mask 8 consisting of
a conformable or deformable (e.g. elastomeric) insulator 10
patterned on an anode 12. The anode has two functions. FIG. 1A also
depicts a substrate 6 separated from mask 8. One is as a supporting
material for the patterned insulator 10 to maintain its integrity
and alignment since the pattern may be topologically complex (e.g.,
involving isolated "islands" of insulator material). The other
function is as an anode for the electroplating operation. CC mask
plating selectively deposits material 22 onto a substrate 6 by
simply pressing the insulator against the substrate then
electrodepositing material through apertures 26a and 26b in the
insulator as shown in FIG. 1B. After deposition, the CC mask is
separated, preferably non-destructively, from the substrate 6 as
shown in FIG. 1C. The CC mask plating process is distinct from a
"through-mask" plating process in that in a through-mask plating
process the separation of the masking material from the substrate
would occur destructively. As with through-mask plating, CC mask
plating deposits material selectively and simultaneously over the
entire layer. The plated region may consist of one or more isolated
plating regions where these isolated plating regions may belong to
a single structure that is being formed or may belong to multiple
structures that are being formed simultaneously. In CC mask plating
as individual masks are not intentionally destroyed in the removal
process, they may be usable in multiple plating operations.
[0024] Another example of a CC mask and CC mask plating is shown in
FIGS. 1D-1F. FIG. 1D shows an anode 12' separated from a mask 8'
that includes a patterned conformable material 10' and a support
structure 20. FIG. 1D also depicts substrate 6 separated from the
mask 8'. FIG. 1E illustrates the mask 8' being brought into contact
with the substrate 6. FIG. 1F illustrates the deposit 22' that
results from conducting a current from the anode 12' to the
substrate 6. FIG. 1 G illustrates the deposit 22' on substrate 6
after separation from mask 8'. In this example, an appropriate
electrolyte is located between the substrate 6 and the anode 12'
and a current of ions coming from one or both of the solution and
the anode are conducted through the opening in the mask to the
substrate where material is deposited. This type of mask may be
referred to as an anodeless INSTANT MASK.TM. (AIM) or as an
anodeless conformable contact (ACC) mask.
[0025] Unlike through-mask plating, CC mask plating allows CC masks
to be formed completely separate from the fabrication of the
substrate on which plating is to occur (e.g. separate from a
three-dimensional (3D) structure that is being formed). CC masks
may be formed in a variety of ways, for example, a
photolithographic process may be used. All masks can be generated
simultaneously, prior to structure fabrication rather than during
it. This separation makes possible a simple, low-cost, automated,
self-contained, and internally-clean "desktop factory" that can be
installed almost anywhere to fabricate 3D structures, leaving any
required clean room processes, such as photolithography to be
performed by service bureaus or the like.
[0026] An example of the electrochemical fabrication process
discussed above is illustrated in FIGS. 2A-2F. These figures show
that the process involves deposition of a first material 2 which is
a sacrificial material and a second material 4 which is a
structural material. The CC mask 8, in this example, includes a
patterned conformable material (e.g. an elastomeric dielectric
material) 10 and a support 12 which is made from deposition
material 2. The conformal portion of the CC mask is pressed against
substrate 6 with a plating solution 14 located within the openings
16 in the conformable material 10. An electric current, from power
supply 18, is then passed through the plating solution 14 via (a)
support 12 which doubles as an anode and (b) substrate 6 which
doubles as a cathode. FIG. 2A, illustrates that the passing of
current causes material 2 within the plating solution and material
2 from the anode 12 to be selectively transferred to and plated on
the cathode 6. After electroplating the first deposition material 2
onto the substrate 6 using CC mask 8, the CC mask 8 is removed as
shown in FIG. 2B. FIG. 2C depicts the second deposition material 4
as having been blanket-deposited (i.e. non-selectively deposited)
over the previously deposited first deposition material 2 as well
as over the other portions of the substrate 6. The blanket
deposition occurs by electroplating from an anode (not shown),
composed of the second material, through an appropriate plating
solution (not shown), and to the cathode/substrate 6. The entire
two-material layer is then planarized to achieve precise thickness
and flatness as shown in FIG. 2D. After repetition of this process
for all layers, the multi-layer structure 20 formed of the second
material 4 (i.e. structural material) is embedded in first material
2 (i.e. sacrificial material) as shown in FIG. 2E. The embedded
structure is etched to yield the desired device, i.e. structure 20,
as shown in FIG. 2F.
[0027] Various components of an exemplary manual electrochemical
fabrication system 32 are shown in FIGS. 3A-3C. The system 32
consists of several subsystems 34, 36, 38, and 40. The substrate
holding subsystem 34 is depicted in the upper portions of each of
FIGS. 3A to 3C and includes several components: (1) a carrier 48,
(2) a metal substrate 6 onto which the layers are deposited, and
(3) a linear slide 42 capable of moving the substrate 6 up and down
relative to the carrier 48 in response to drive force from actuator
44. Subsystem 34 also includes an indicator 46 for measuring
differences in vertical position of the substrate which may be used
in setting or determining layer thicknesses and/or deposition
thicknesses. The subsystem 34 further includes feet 68 for carrier
48 which can be precisely mounted on subsystem 36.
[0028] The CC mask subsystem 36 shown in the lower portion of FIG.
3A includes several components: (1) a CC mask 8 that is actually
made up of a number of CC masks (i.e. submasks) that share a common
support/anode 12, (2) precision X-stage 54, (3) precision Y-stage
56, (4) frame 72 on which the feet 68 of subsystem 34 can mount,
and (5) a tank 58 for containing the electrolyte 16. Subsystems 34
and 36 also include appropriate electrical connections (not shown)
for connecting to an appropriate power source for driving the CC
masking process.
[0029] The blanket deposition subsystem 38 is shown in the lower
portion of FIG. 3B and includes several components: (1) an anode
62, (2) an electrolyte tank 64 for holding plating solution 66, and
(3) frame 74 on which the feet 68 of subsystem 34 may sit.
Subsystem 38 also includes appropriate electrical connections (not
shown) for connecting the anode to an appropriate power supply for
driving the blanket deposition process.
[0030] The planarization subsystem 40 is shown in the lower portion
of FIG. 3C and includes a lapping plate 52 and associated motion
and control systems (not shown) for planarizing the
depositions.
[0031] Another method for forming microstructures from
electroplated metals (i.e. using electrochemical fabrication
techniques) is taught in U.S. Pat. No. 5,190,637 to Henry Guckel,
entitled "Formation of Microstructures by Multiple Level Deep X-ray
Lithography with Sacrificial Metal layers". This patent teaches the
formation of metal structure utilizing mask exposures. A first
layer of a primary metal is electroplated onto an exposed plating
base to fill a void in a photoresist, the photoresist is then
removed and a secondary metal is electroplated over the first layer
and over the plating base. The exposed surface of the secondary
metal is then machined down to a height which exposes the first
metal to produce a flat uniform surface extending across the both
the primary and secondary metals. Formation of a second layer may
then begin by applying a photoresist layer over the first layer and
then repeating the process used to produce the first layer. The
process is then repeated until the entire structure is formed and
the secondary metal is removed by etching. The photoresist is
formed over the plating base or previous layer by casting and the
voids in the photoresist are formed by exposure of the photoresist
through a patterned mask via X-rays or UV radiation.
[0032] Even though electrochemical fabrication as taught and
practiced to date, has greatly enhanced the capabilities of
microfabrication, and in particular added greatly to the number of
metal layers that can be incorporated into a structure and to the
speed and simplicity in which such structures can be made, room for
enhancing the state of electrochemical fabrication exists.
SUMMARY OF THE INVENTION
[0033] It is an object of some embodiments of the invention to
provide an improved method for deriving data necessary to define
cross-sectional configurations of structures or groups of
structures to be formed.
[0034] It is an object of some embodiments of the invention to
provide simplified data manipulation techniques for defining
cross-sectional data representing layers of structure that are to
be formed.
[0035] Other objects and advantages of various embodiments of the
invention will be apparent to those of skill in the art upon review
of the teachings herein. The various embodiments of the invention,
set forth explicitly herein or otherwise ascertained from the
teachings herein, may address one or more of the above objects
alone or in combination, or alternatively may address some other
object of the invention ascertained from the teachings herein. It
is not necessarily intended that all objects be addressed by any
single aspect of the invention even though that may be the case
with regard to some aspects.
[0036] In a first aspect of the invention, a process for forming a
multilayer three-dimensional structure, includes: (a) providing
data descriptive of the three-dimensional structure; (b) processing
the data to derive cross-sectional data descriptive of a plurality
of cross-sections of the three-dimensional structure; (c)
processing the cross-sectional data to derive modified
cross-sectional data including polygons, where each individual
polygon encloses only a positive area; (d) using the modified
cross-sectional data in a process for forming a patterned adhered
mask; (e) forming and adhering a layer of material to a substrate,
wherein the substrate may include one or more previously deposited
materials; (f) repeating the forming and adhering operation a
plurality of times to build up a three-dimensional structure from a
plurality of adhered layers, wherein the formation of at least one
layer includes using the patterned adhered mask to pattern the
substrate or previously deposited material.
[0037] In a second aspect of the invention, a process for modifying
a substrate, includes: (a) providing data descriptive of a
modification to be made to a substrate; (b) processing the data to
derive cross-sectional data descriptive of the modification of the
substrate; (c) processing the cross-sectional data to derive
modified cross-sectional data including polygons, where each
individual polygon encloses only a positive area; (d) using the
modified cross-sectional data in a process for forming a patterned
adhered mask; (e) modifying the substrate using the patterned
adhered mask.
[0038] In a third aspect of the invention, a process for forming a
multilayer three-dimensional structure, includes: (a) providing
cross-sectional data descriptive of a plurality of cross-sections
of the three-dimensional structure; (c) processing the
cross-sectional data to derive modified cross-sectional data
including polygons, where each individual polygon encloses only a
positive area; (d) using the modified cross-sectional data in a
process for forming a patterned adhered mask; (e) forming and
adhering a layer of material to a substrate, wherein the substrate
may include one or more previously deposited materials; (f)
repeating the forming and adhering operation a plurality of times
to build up a three-dimensional structure from a plurality of
adhered layers, wherein the formation of at least one layer
includes using the patterned adhered mask to pattern the substrate
or previously deposited material.
[0039] In a fourth aspect of the invention, a process for modifying
a substrate, includes: (a) providing cross-sectional data
descriptive of the modification of the substrate; (c) processing
the cross-sectional data to derive modified cross-sectional data
including polygons, where each individual polygon encloses only a
positive area; (d) using the modified cross-sectional data in a
process for forming a patterned adhered mask; (e) modifying the
substrate using the patterned adhered mask.
[0040] Further aspects of the invention will be understood by those
of skill in the art upon reviewing the teachings herein. Other
aspects of the invention may involve apparatus that can be used in
implementing one or more of the above method aspects of the
invention. These other aspects of the invention may provide various
combinations of the aspects, embodiments, and associated
alternatives explicitly set forth herein as well as provide other
configurations, structures, functional relationships, and processes
that have not been specifically set forth above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0041] FIGS. 1A-1C schematically depict side views of various
stages of a CC mask plating process, while FIGS. 1D-1G
schematically depict a side views of various stages of a CC mask
plating process using a different type of CC mask.
[0042] FIGS. 2A-2F schematically depict side views of various
stages of an electrochemical fabrication process as applied to the
formation of a particular structure where a sacrificial material is
selectively deposited while a structural material is blanket
deposited.
[0043] FIGS. 3A-3C schematically depict side views of various
example subassemblies that may be used in manually implementing the
electrochemical fabrication method depicted in FIGS. 2A-2F.
[0044] FIGS. 4A-4I schematically depict the formation of a first
layer of a structure using adhered mask plating where the blanket
deposition of a second material overlays both the openings between
deposition locations of a first material and the first material
itself.
[0045] FIG. 5 provides a block diagram of a process for forming a
three-dimensional structure according to a first embodiment of the
invention including the manipulation of data representing the
structure to obtain data suitable for use in creating one or more
photomasks that will be used in the fabrication of the
structure.
[0046] FIG. 6 provides a block diagram detailing an exemplary set
of operations that may be performed in completing the data
manipulation operation of FIG. 5 including a cross-sectioning
operation, an indicating operation, and a data production
operation.
[0047] FIGS. 7A-7C provide block diagrams of three examples of how
the operations of FIG. 6 may be supplemented by additional
operations to allow photomasks to be produced which have patterning
corresponding to a plurality of copies of the structure or
structures to be formed.
[0048] FIG. 8 provides a block diagram showing two examples of how
the indicating operation of FIG. 6 may be implemented.
[0049] FIG. 9 provides a block diagram showing an example of how
the data production operation of FIG. 6 may be implemented along
with two example alternatives on how polygon boundaries may relate
to the data lines from which they are derived.
[0050] FIG. 10 provides a schematic illustration of a top view of
an example cross-sectional configuration of two three-dimensional
structures that are to be formed.
[0051] FIGS. 11A-11D provide schematic illustrations of top views
of various stages of the process of FIG. 9 where the regions
defined to include positive areas are those that are occupied by
structure to be formed.
[0052] FIG. 12 provides a schematic illustration of a top view of
the structure of FIG. 11A where the polygons are shown as having a
width that is somewhat larger than the spacing between successive
polygons.
[0053] FIGS. 13A-13D provide schematic illustrations of top views
of various stages of the process of FIG. 9 where the regions
defined to include positive areas are those that are outside the
regions to be occupied by structure to be formed.
[0054] FIGS. 14A-14B provide schematic illustrations of top views
of a pair of structures which are to be duplicated multiple times
in a mask that is to be produced and where the duplications may
include one or more rotations, scaling variations, mirroring
operations, complementing operations, and the like.
[0055] FIG. 15 provides a block diagram of a process for forming a
three-dimensional structure according to a second embodiment of the
invention including the manipulation of data representing the
structure to obtain data suitable for use in creating one or more
masks that may be used in selectively patterning a substrate or
previously deposited material during the fabrication of the
structure.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
[0056] FIGS. 1A-1G, 2A-2F, and 3A-3C illustrate various features of
one form of electrochemical fabrication that are known. Other
electrochemical fabrication techniques are set forth in the '630
patent referenced above, in the various previously incorporated
publications, in various other patents and patent applications
incorporated herein by reference, still others may be derived from
combinations of various approaches described in these publications,
patents, and applications, or are otherwise known or ascertainable
by those of skill in the art from the teachings set forth herein.
All of these techniques may be combined with those of the various
embodiments of various aspects of the invention to yield enhanced
embodiments. Still other embodiments may be derived from
combinations of the various embodiments explicitly set forth
herein.
[0057] FIGS. 4A-4I illustrate various stages in the formation of a
single layer of a multi-layer fabrication process where a second
metal is deposited on a first metal as well as in openings in the
first metal where its deposition forms part of the layer. In FIG.
4A, a side view of a substrate 82 is shown, onto which patternable
photoresist 84 is cast as shown in FIG. 4B. In FIG. 4C, a pattern
of resist is shown that results from the curing, exposing, and
developing of the resist. The patterning of the photoresist 84
results in openings or apertures 92(a)-92(c) extending from a
surface 86 of the photoresist through the thickness of the
photoresist to surface 88 of the substrate 82. In FIG. 4D, a metal
94 (e.g. nickel) is shown as having been electroplated into the
openings 92(a)-92(c). In FIG. 4E, the photoresist has been removed
(i.e. chemically stripped) from the substrate to expose regions of
the substrate 82 which are not covered with the first metal 94. In
FIG. 4F, a second metal 96 (e.g., silver) is shown as having been
blanket electroplated over the entire exposed portions of the
substrate 82 (which is conductive) and over the first metal 94
(which is also conductive). FIG. 4G depicts the completed first
layer of the structure which has resulted from the planarization of
the first and second metals down to a height that exposes the first
metal and sets a thickness for the first layer. In FIG. 4H the
result of repeating the process steps shown in FIGS. 4B-4G several
times to form a multi-layer structure are shown where each layer
consists of two materials. For most applications, one of these
materials is removed as shown in FIG. 4I to yield a desired 3-D
structure 98 (e.g. component or device).
[0058] The various embodiments, alternatives, and techniques
disclosed herein may form multi-layer structures using a single
patterning technique on all layers or using different patterning
techniques on different layers. For example, different types of
patterning masks and masking techniques may be used or even
techniques that perform direct selective depositions without the
need for masking. For example, conformable contact masks may be
used on some layers or in association with some selective
depositions on some layers while non-conformable contact masks may
be used in association with other depositions on the same layers or
in association with depositions on other layers. Proximity masks
and masking operations (i.e. operations that use masks that at
least partially selectively shield a substrate by their proximity
to the substrate even if contact is not made) may be used, and
adhered masks and masking operations (masks and operations that use
masks that are adhered to a substrate onto which selective
deposition or etching is to occur as opposed to only being
contacted to it) may be used.
[0059] In some embodiments of the invention, masks appropriate for
selective depositions, etching operations, or other operations that
pattern a substrate may be, for example, formed using a photomask
through which a photopatternable material is exposed and/or via a
direct exposure of a laser beam, or the like, which may be scanned
(using relative motion), and possibly shuttered on and off,
selectively onto desired portions of the photopatternable material.
After exposure, if necessary, development of the photoresist may
occur to yield the desired patterning.
[0060] Some embodiments of the invention are directed to techniques
for electrochemically fabricating multi-layer three-dimensional
structures where selective patterning of at least one or more
layers occurs via use of a mask that was formed using data
representing cross-sections of the three-dimensional structure
which has been modified to place it in a polygonal form which
defines only regions of positive area. The regions of positive area
are regions where structural material is to be located or regions
where structural material is not to be located depending on whether
the mask will be used, for example, in selectively depositing a
structural material or in selectively depositing a sacrificial
material. The modified data may take the form of adjacent or
slightly overlapped relatively narrow rectangular structures where
the width of the structures is related to a desired formation
resolution. The spacing between centers of adjacent rectangles may
be uniform or may be a variable. The data modification may also
include the formation of duplicate copies of an original structure,
scaled copies, mirrored copies, rotated copies, complementary
copies, and/or the like.
[0061] FIG. 5 provides a block diagram of a process for forming a
three-dimensional structure according to a first embodiment of the
invention including the manipulation of data representing the
structure to obtain data suitable for use in creating one or more
photomasks that will be used in the fabrication of the
structure.
[0062] The block diagram of FIG. 5 begins with block 100 which
calls for the conceiving of a three dimensional structure or
plurality of structures that one would like to form. The structures
may be of any scale; however, the most preferred embodiments of the
invention are directed to the formation of mesoscale or microscale
structures (e.g. parts, devices, components, or the like).
[0063] Block 110 of the process calls for the development of data
that is descriptive of the structure or structures to be formed.
This data may take a variety of forms, for example, it may be
surface data descriptive of a three dimensional structure, cross
sectional data descriptive of one or more layers making up the
structure, or volumetric data defining the three dimensional
structure or structures. Examples of such data can be found in U.S.
Pat. No. 4,961,154 to Pomerantz et al. which is entitled "Three
Dimensional Modeling Apparatus"; U.S. Pat. No. 5,184,307 to Hull et
al. which is entitled "Method and Apparatus for Production of High
Resolution Three Dimensional Objects by Stereolithography"; and
U.S. Pat. No. 5,321,622 to Snead et al. which is entitled "Boolean
Layer Comparison Slice". These patents are hereby incorporated
herein by reference as if set forth in full.
[0064] Block 120 calls for the manipulation of the supplied data so
as to obtain data suitable for generating one or more photomasks
which are descriptive of at least portions of one or more
cross-sections of the structure or structures to be formed. The
manipulated data may provide modified definitions of solid and
empty regions based on a number of factors. These factors include,
for example, the type of photopatternable material that will be
used, whether or not the mask that will be produced is intended to
produce structural regions (i.e. regions of solid) or sacrificial
regions (i.e. hollow regions), whether or not some form of boundary
position offsetting will be used (e.g. to accommodate for various
offsets or shifts in boundary positions that may result from the
processes used to create the structure or used to create the mask),
whether or not any scaling of the size of the structure will occur,
whether or not any mirroring of structural features will occur,
whether or not the complimenting of the data will occur for reasons
other then those noted above, and whether or not the offset between
adjacent raster or hatch lines will be of a fixed value or will be
a variable.
[0065] If the photopatternable material is a photoresist of the
negative type the photoresist will become insoluble in those
regions where light sufficiently exposes it whereas if it is of the
positive type it will become selectively soluble in certain
solvents in regions where light has exposed it. Thus depending upon
the type of photoresist chosen, the data used to define the exposed
regions may need to vary. If on the other hand a contact mask is
being made, depending upon the type of process being used (e.g. in
one of the processes disclosed in U.S. Pat. No. 6,027,630 as
discussed herein above), it may be necessary for the regions
defined by the data to be complemented, size shifted, or otherwise
adjusted.
[0066] Turning back to FIG. 5, block 130 calls for the generation
of one or more photomasks based at least in part on the manipulated
data derived in block 120.
[0067] Block 140 calls for the patterning of a masking material
(e.g. that will be used to directly pattern material forming part
of the layers of the structure) using the at least one
photomask.
[0068] Block 150 calls for the formation of a layer of the
structure from one or more desired materials using patterned
masking material obtained in block 140 where the patterned masking
material is used in selectively depositing a building material
(e.g. a structural material or a sacrificial material) and/or to
modify a substrate or previously deposited material.
[0069] Block 160 calls for the formation of any additional layers
that are required to build the structure while block 170 calls for
the performance of any necessary post layer formation processes
(i.e. post processing operations) to complete formation of the
three dimensional structure or structures.
[0070] FIG. 6 provides a block diagram detailing an exemplary set
of operations that may be performed in completing the data
manipulation operation of FIG. 5 including a cross-sectioning
operation, an indicating operation, and a data production
operation.
[0071] The data manipulation process of FIG. 6 begins with the
operation of block 222 which calls for the receiving of
three-dimensional data descriptive of the structure or structures
to be formed. The received data is then manipulated by the
operation of block 232 which calls for the derivation of one or
more levels of cross-sectional data based at least in part on the
data descriptive of the three-dimensional structure.
[0072] Block 242 calls for defining how each region of the
cross-sectional data will be used in producing the final
manipulated data that will be used in generating each photomask
associated with a given data level or cross-sectional level.
[0073] Block 252 calls for the production of a data set which
includes boundary descriptions of one or more polygonal geometries
that will be used in generating a photomask. Each of the polygonal
geometries is descriptive of a positive area or a negative area and
the same selection of positive or negative area is made for each
polygon.
[0074] In one embodiment of the invention, for example, the
polygons are rectangular structures which are oriented along a
series of closely spaced raster or vector lines and where the width
of each rectangle is selected to provide complete coverage of the
region located between consecutive raster lines that is intended to
be controlled or covered by the polygon (e.g. the width is set to
be equal to the spacing between the raster lines or somewhat larger
then the spacing between raster lines).
[0075] FIGS. 7A-7C provide block diagrams of three examples of how
the operations of FIG. 6 may be supplemented by additional
operations to allow photomasks to be produced which have patterning
corresponding to a plurality of copies of the structure or
structures to be formed.
[0076] FIG. 7A introduces an additional operation between
operations 222 and 232 of FIG. 6. This additional operation 224
calls for the making of copies of the three-dimensional data
corresponding to any duplicates of the 3-D structure that are to be
simultaneously formed.
[0077] FIG. 7B, on the other hand, calls for the inclusion of an
additional operation 234-1 between operations 232 and 242 of FIG.
6. Operation 234-1 calls for the making of a copy of the
cross-sectional data for each duplicate of the structure that is to
be included on the photomask.
[0078] FIG. 7C calls for the introduction of an operation 234-2
between operations 232 and 242 of FIG. 6. Operation 234-2 calls for
the providing of offsets and links to cross sectional data for any
structure or structures that are to be duplicated as opposed to
making a duplicate of the entire data set of the structure or
structures for each copy to be produced. It is intended that the
link and offset information reduce the amount of data storage
required and computational effort necessary to produce the data
sets called for in block 252.
[0079] In alternative embodiments the copies and or offsets and
links of FIGS. 7A-7C may alternatively, or additionally, include
variations in the copies or additional parameters in the links and
offsets so as to call for variations of the original structure or
structures to be produced. As noted previously such variations may
include scaling, boundary offsetting, mirroring, complementing,
and/or the like.
[0080] FIG. 8 provides a block diagram showing two examples of how
the indicating operation of FIG. 6 may be implemented.
[0081] Block 242-1 of FIG. 8 provides a first example
implementation of operation 242 of FIG. 6. It calls for the regions
outside of the positive area boundaries to be non-data producing
regions. In other words, the positive areas are the areas which
will give rise to polygons that will be included in the data set
produced by operation 252.
[0082] Block 242-2 calls for the regions outside the positive area
boundaries to be data producing and regions within the positive
boundaries to be non-data producing. In other words, the polygons
produced in the operation of block 252 will include mask regions
that are exclusive of regions defined by the positive boundaries of
the cross-sectional data of block 232. In other alternative
embodiments, it may be possible to provide other definitions of how
positive and/or negative areas should be handled. For example, in
embodiments where more then two complimentary materials will be
used during the formation of a structure or structures, the
definitions may be based upon material type as well as upon whether
a boundary defines a positive or negative region.
[0083] FIG. 9 provides a block diagram showing an example of how
the data production operation of block 252 of FIG. 6 may be
implemented along with two example alternatives on how polygon
boundaries may be related to the data lines from which they are
derived in this example.
[0084] The data production operation of block 252 may be
implemented by first deriving a plurality of spaced data lines
located within the regions that are defined to be data producing as
called for by block 254 of FIG. 9. These spaced data lines may be
called hatch lines, fill lines, raster lines, or the like and are
located within in the data producing regions. These lines may be
derived conceptually from the overlaying of the data producing
regions onto a predefined grid of hatch paths, fill paths, or
raster paths (i.e. locations capable of producing lines to the
extent they are located within data producing regions) or
alternatively locations of the paths may be defined in a more
geometry sensitive manner. Such sensitivity may result in the
spacing of paths being reduced or increased based on an intercept
angle between approximate path locations and one or both of the
boundaries of the data producing regions.
[0085] In alternative embodiments, the orientation of hatch paths
may be varied from cross-section to cross-section or even from
cross-sectional region to cross-sectional region, for example, in
order to minimize any negative effects that quantization resulting
from the use of raster lines in generating rectangular polygons
(i.e. pseudo-raster polygons or simply pseudo-rasters). Various
methods for producing the spaced data lines are taught in U.S. Pat.
Nos. 5,184,306 and 5,321,622 which have been discussed above and
which are incorporated herein by reference.
[0086] Block 256 calls for the conversion of each spaced data line
into a polygon whose length is defined by the length of the data
line itself and whose width and position may be defined in
different ways. For example, as indicated in block 258-1 the
position of the polygon may be centered about the data line while
the width of the polygon may be equal to that of the spacing
between the data lines (block 260-1) or it may be equal to the
spacing between the data lines plus an incremental amount (block
260-2). Alternatively as indicated in block 258-2 the position may
be bounded on one side by the data line that gives rise to the
polygon while the width is set to that of the line spacing (block
260-1) or is set to the line spacing plus an incremental amount
(260-2). In alternative embodiments, it may be possible to use
polygons that are not rectangles. For example, it may be possible
to use trapezoids. In other alternative embodiments, it may be
possible to reduce the quantity of pseudoraster data by merging
smaller rectangles together so as to produce larger rectangles or
even more complex polygonal shapes. Such merging may occur, for
example, when two or more adjacent pseudo raster rectangles have
common end points.
[0087] In still other embodiments each polygon may be derived from
data lines or portions of data lines located on two consecutive
hatch paths where the end segments of the polygons are generated
from an appropriate bridging of the data lines. In the simplest of
cases, the bridging of the data lines may produce polygon boundary
lines from lines that connect the hatch lines endpoint to endpoint
or beginning point to beginning point. In other cases, it may be
desirable to use information concerning common positioning of the
data lines in determining whether or not bridging should occur. In
still other cases it may be desirable to consider whether or not
multiple lines exist on one hatch path that overlay positions
occupied by a single hatch line on an adjacent hatch path. In still
other embodiments, it may be desirable to base the positioning of
ambiguous bridging elements based on continuity of bridging element
slope from one or more adjacent pairs of data lines.
[0088] FIG. 10 provides a schematic illustration of a top view of
an example cross-sectional configuration of two three-dimensional
structures that are to be formed.
[0089] The sample cross-section shown in FIG. 10 includes a first
structure 302 having two boundary elements 304 and 306 which define
a region of structure 308 and a hollow region or empty region 310.
Structure 312 includes a boundary region 314 and a region of
structure 318.
[0090] FIGS. 11A-11D provide schematic illustrations of top views
of various stages of the process of FIG. 9 where the regions
defined to be data producing are those that are occupied by
structure to be formed.
[0091] FIG. 11A depicts a state of the process after boundary
regions 304, 306, and 314 have been created. Boundary 304 defines a
positive area with the exception of the region occupied by boundary
306 which defines a negative area. Boundary 314 also defines a
positive area.
[0092] FIG. 11B depicts a state of the process after raster lines
324 have been made to occupy a region defined by the Boolean
difference between boundaries 304 and 306 and hatch lines 334 have
been made to occupy boundary 314.
[0093] FIG. 11C depicts the state of the process where only the
hatch lines or raster lines are shown.
[0094] FIG. 11D depicts a state of the process after hatch or
raster lines 324 and 334 have been converted to rectangular
polygons 326 and 336. The length of each polygon corresponds to the
length of the hatch or raster line which gave rise to it while the
width, w, of the polygons correspond to the spacing, w, between
adjacent hatch paths or raster paths. To distinguish the separate
polygons, adjacent polygons have been depicted with alternating
fill patterns.
[0095] FIG. 12 provides a schematic illustration of a top view of
the structure of FIG. 11A where the polygons are shown as having a
width that is somewhat larger than the spacing between successive
polygons. FIG. 12 depicts transition regions 328 and 338 that are
located at the boundaries separating adjacent polygons. These
transition regions are actually regions of overlap between adjacent
polygons which result from the width of each polygon, w', being
greater then the separation, w, between consecutive raster
paths.
[0096] FIGS. 13A-13D provide schematic illustrations of top views
of various stages of the process of FIG. 9 where the regions
defined to include positive areas are those that are outside the
regions to be occupied by structure to be formed.
[0097] FIGS. 13A-13D depict complementary patterns as compared to
those of FIGS. 10, 11B, 11C and 11D respectively. Boundaries 404,
406, and 414 are similar to boundaries 304, 306 and 314 with the
exception that they are defined to enclose areas of opposite
sign.
[0098] FIG. 13A also depicts the conceptual existence of a fourth
boundary 416 which encloses the effective build area or area of the
photomask. Boundary 416 is considered to define a positive
area.
[0099] FIG. 13B depicts a state of the process after hatch or
raster paths have given rise to hatch or raster lines in the
regions of positive area (i.e. regions defined to be data
producing). A comparison of FIGS. 13B and 11B indicate that the
reversed definitions of areas defined by each boundary type and
inclusion of a global boundary 416 have resulted in FIG. 13B
producing a complementary pattern of hatch lines to those of FIG.
11B. The complementary pattern of hatch lines is shown more clearly
in FIG. 13C as boundaries have been removed.
[0100] FIG. 13D depicts a state of the process after hatch lines
have been converted to a polygon or pseudo-raster volumes where the
length of the polygons is based on the length of the hatch lines
that gave rise to them and the width of the polygons is set to be
equal to the width, w, of the spacing between hatch paths.
[0101] FIGS. 14A-14B provide schematic illustrations of top views
of a pair of structures which are to be duplicated multiple times
in a mask that is to be produced, where the duplications may
include one or more of rotations, scaling variations, mirroring
operations, complementing operations, and the like.
[0102] FIG. 14A graphically depicts the contents of a data file
that may be used in producing a photomask. The data file includes
structures 420 and 422 defined by a plurality of pseudo-rasters for
structures 420 and 422 and for a plurality of duplicates of them.
The data provides for production of a photomask that represents an
array of structures. The photomask may in turn be used to produce a
patterning mask which can give rise to an array of structures
during build operations.
[0103] FIG. 14B depicts an alternative data set where structures
420 and 422 have been duplicated, scaled, mirrored and rotated and
complemented, so as to give rise to a data set that may be used to
produce a photomask with a plurality of different configurations of
a basic structure or structures that may be used in forming the
plurality of different structures simultaneously in a single build
process.
[0104] FIG. 15 provides a block diagram of a process for forming a
three-dimensional structure according to a second embodiment of the
invention including the manipulation of data representing the
structure to obtain data suitable for use in creating one or more
masks that may be used in selectively patterning a substrate or
previously deposited material during the fabrication of the
structure.
[0105] The process of FIG. 15 is similar to that depicted in FIG. 5
with the exception that the process of FIG. 15 does not produce
data that is used to produce a photomask but instead uses the
produced data to pattern a masking material that will be directly
used in patterning a substrate or depositing a material thereto.
The direct patterning of a masking material may occur, for example,
by selective scanning of a laser beam over the surface of the
masking material wherein different scanning speeds may be used to
obtain different levels of exposure or where the intensity of the
laser beam striking the surface may be modulated on and off
depending on whether the beam is directed to a location where
exposure is to occur. The exposure from the laser beam may result
in the formation of a latent pattern which can be brought out by
developing the material (e.g. a photoresist material) or
alternatively the exposure may result in the ablation of
material.
[0106] Other direct patterning techniques might involve the
selective deposition of patterning material onto the surface of the
substrate or previously formed layer, for example, by controlled
ink jet dispensing or the like. The operations of blocks 400, 410
and 420 are similar to the operations of blocks 100, 110, and
120.
[0107] Block 440 calls for the patterning of a masking material
using the manipulated data.
[0108] Blocks 450, 460, and 470 call for similar operations to
those set forth in blocks 150, 160 and 170.
[0109] Various other embodiments of the present invention exist.
Some of these embodiments may be based on a combination of the
teachings herein with various teachings incorporated herein by
reference. Some embodiments may not use any blanket deposition
process and/or they may not use a planarization process. Some
embodiments may involve the selective deposition of a plurality of
different materials on a single layer or on different layers. Some
embodiments may use selective deposition processes or blanket
deposition processes on some or all layers that are not
electrodeposition processes. Some embodiments may use nickel as a
structural material while other embodiments may use different
materials. Some embodiments may use copper as the structural
material with or without a sacrificial material. Some embodiments
may remove a sacrificial material while other embodiments may not.
In some embodiments the anode (used during electrodeposition) may
be different from a conformable contact mask support and the
support may be a porous structure or other perforated structure.
Some embodiments may produce structures that include both
conductive materials and dielectric materials.
[0110] Some embodiments may produce pseudo raster data representing
regions that are different from cross-sectional regions or selected
material regions associated with specific cross-sections. Some
processes may employ mask based selective etching operations in
conjunction with blanket deposition operations. In such processes,
pseudo-rasters may be generated based on desired etching patterns
or patterns of mask openings that will be used in association with
such etching operations. Some embodiments may form structures on a
layer-by-layer basis but may deviate from a strict planar layer by
planar layer build up process in favor of a process that
interlacing material deposited in association with different
layers. Such alternative build processes are disclosed in U.S.
application Ser. No. 10/434,519, filed on May 7, 2003, entitled
Methods of and Apparatus for Electrochemically Fabricating
Structures Via Interlaced Layers or Via Selective Etching and
Filling of Voids. This application is hereby incorporated herein by
reference as if set forth in full.
[0111] In view of the teachings herein, many further embodiments,
alternatives in design and uses of the invention will be apparent
to those of skill in the art. As such, it is not intended that the
invention be limited to the particular illustrative embodiments,
alternatives, and uses described above but instead that it be
solely limited by the claims presented hereafter.
* * * * *