U.S. patent application number 12/290400 was filed with the patent office on 2009-05-07 for substrate treating apparatus and method for treating substrate using the substrate treating apparatus.
Invention is credited to Seong-Soo Kim.
Application Number | 20090114248 12/290400 |
Document ID | / |
Family ID | 40586895 |
Filed Date | 2009-05-07 |
United States Patent
Application |
20090114248 |
Kind Code |
A1 |
Kim; Seong-Soo |
May 7, 2009 |
Substrate treating apparatus and method for treating substrate
using the substrate treating apparatus
Abstract
A substrate treating apparatus includes an injecting nozzle
which injects a treating solution to dry a substrate. The injecting
nozzle discharges the treating solution to the substrate and
injects a treating gas to the treating solution discharged from the
injecting nozzle by controlling a stream of the treating gas. Thus,
since the substrate treating apparatus can minimize a size of a
minor particle of the treating solution, a cleaning efficiency and
a yield of a product may be improved.
Inventors: |
Kim; Seong-Soo;
(Chungcheongnam-do, KR) |
Correspondence
Address: |
JENKINS, WILSON, TAYLOR & HUNT, P. A.
Suite 1200 UNIVERSITY TOWER, 3100 TOWER BLVD.,
DURHAM
NC
27707
US
|
Family ID: |
40586895 |
Appl. No.: |
12/290400 |
Filed: |
October 30, 2008 |
Current U.S.
Class: |
134/7 ;
134/99.1 |
Current CPC
Class: |
H01L 21/67051 20130101;
H01L 21/67034 20130101 |
Class at
Publication: |
134/7 ;
134/99.1 |
International
Class: |
B08B 3/02 20060101
B08B003/02 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 5, 2007 |
KR |
2007-112251 |
Claims
1. A substrate treating apparatus, comprising: a supporting member
on which a substrate is fixedly disposed; and a treating solution
supplying portion which is disposed above the supporting member and
dries the substrate by injecting a treating solution in the shape
of a minute particle on the substrate disposed on the supporting
member, wherein the treating solution supplying portion comprises:
a first supplying nozzle receiving the treating solution; a second
supplying nozzle receiving a treating gas; and an injecting nozzle
which simultaneously discharges the treating gas and the treating
solution by controlling a stream of the treating gas to decompose
the treating solution into a minor particle through the treating
gas, the injecting nozzle including a chemical solution flow path
in which the treating solution is injected from the first supplying
nozzle and a gas flow path surrounding the chemical solution flow
path in which the treating gas is injected from the second
supplying nozzle.
2. The substrate treating apparatus of claim 1, wherein the
injection nozzle comprises: a first nozzle portion in which the
chemical solution flow path and a first injection hole discharging
the treating solution are formed, the first nozzle portion being
connected to the first supplying nozzle; and a second nozzle
portion that the gas flow path is formed between the first nozzle
portion and the second nozzle portion, and a second injection hole
surrounding the first injection hole is formed to discharge the
treating gas, the second nozzle portion surrounding the first
nozzle portion and being connected to the second supplying
nozzle.
3. The substrate treating apparatus of claim 2, wherein a lower
portion of the second nozzle portion where the second injection
hole is formed bends toward the first nozzle portion.
4. The substrate treating apparatus of claim 2, wherein the first
nozzle portion comprises: a body portion in which the chemical
solution flow path is formed to be connected to the first supplying
nozzle and has a cylindrical shape; and a gas guide portion in
which a plurality of guide holes changing a stream of the treating
gas is formed, the gas guide portion being formed on an outer wall
of the body portion, combined with an inner wall of the second
nozzle portion, and disposed adjacent the second injection
hole.
5. The substrate treating apparatus of claim 4, wherein the guide
holes are located to be separated from each other and disposed in
the shape of a spiral structure with respect to the body
portion.
6. The substrate treating apparatus of claim 4, wherein the guide
holes are located to be separated from each other and disposed in a
radial shape with respect to the body portion.
7. A method for treating a substrate, comprising: fixedly disposing
a substrate on a supporting member; disposing an injection nozzle
on an upper portion of the supporting member; and drying the
substrate by injecting the treating solution in the shape of a
minute particle through the injecting nozzle, wherein drying the
substrate comprises: injecting a treating gas into a gas flow path
of the injecting nozzle surrounding the chemical solution flow path
and injecting the treating solution into a chemical flow path of
the injecting nozzle; and controlling a stream of the treating gas
which is injected in the gas flow path to discharge the treating
gas to the substrate and discharging the treating solution of the
chemical solution flow path to the substrate to decompose the
treating solution in the shape of a minute particle.
8. The method for treating a substrate of claim 7, wherein the
treating gas is injected into a treating solution discharged from
the injection nozzle by controlling a gas stream.
9. A method for treating a substrate, comprising: fixedly disposing
a substrate on a supporting member; and providing an isopropyl
alcohol to the substrate to dry the substrate, wherein the
isopropyl alcohol is provided to the substrate in the shape of a
spray using a treating gas.
10. The method for treating a substrate of claim 9, wherein drying
the substrate comprises: disposing an injection nozzle on an upper
portion of the supporting member; injecting the isopropyl alcohol
into a chemical flow path of the injecting nozzle and injecting the
treating gas into a gas flow path of the injecting nozzle
surrounding the chemical solution flow path; and controlling a
stream of the treating gas which is injected in the gas flow path
to inject the treating gas into the substrate and discharging the
isopropyl alcohol of the chemical solution flow path to the
substrate to decompose the isopropyl alcohol in the shape of a
minute particle.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This U.S. non-provisional patent application claims priority
under 35 U.S.C. .sctn.119 of Korean Patent Application No.
10-2007-0112251, filed on Nov. 5, 2007, the entire contents of
which are herein incorporated by reference in their entirety.
BACKGROUND
[0002] The present invention disclosed herein relates to an
apparatus for manufacturing a semiconductor substrate, and more
particularly, to a chemical solution treatment apparatus providing
a chemical solution for treating a semiconductor substrate and a
method for cleaning the semiconductor substrate.
[0003] Generally, semiconductor devices are manufactured by
repeating deposition, etching and cleaning processes. Particularly,
wet etching and cleaning processes treat a semiconductor substrate
using various chemical solutions.
[0004] When a semiconductor substrate is dried using isopropyl
alcohol, a chemical solution nozzle for injecting isopropyl alcohol
and a gas nozzle for injecting nitrogen gas are disposed on upper
portion of the semiconductor substrate, respectively. The
semiconductor substrate is dried by isopropyl alcohol and nitrogen
gas discharged from the chemical solution nozzle and the gas
nozzle, respectively. However, since the chemical solution nozzle
and the gas nozzle are separately provided and isopropyl alcohol
and nitrogen gas are linearly injected from the respective nozzles
to the semiconductor substrate, the isopropyl alcohol and nitrogen
gas are not well mixed. Therefore, a cleaning efficiency of a
semiconductor substrate is deteriorated.
SUMMARY
[0005] Exemplary embodiments provide a substrate treating
apparatus. The substrate treating apparatus includes a supporting
member and a treating solution supplying portion. A substrate is
fixedly disposed on the supporting member. The treating solution
supplying portion is disposed above the supporting member and dries
the substrate by injecting a treating solution in the shape of a
minute particle on the substrate disposed on the supporting member.
The treating solution supplying portion includes a first supplying
nozzle, a second supplying nozzle and an injecting nozzle. The
first supplying nozzle receives the treating solution. The second
supplying nozzle receives a treating gas. The injecting nozzle
simultaneously discharges the treating gas and the treating
solution by controlling a stream of the treating gas to decompose
the treating solution into a minor particle through the treating
gas. The injecting nozzle includes a chemical solution flow path in
which the treating solution is injected from the first supplying
nozzle, and a gas flow path which surrounds the chemical solution
flow path and in which the treating gas is injected from the second
supplying nozzle.
[0006] Exemplary embodiments provide a method of treating a
substrate. The method is as follows. A substrate is fixedly
disposed on a supporting member and an injection nozzle is disposed
on an upper portion of the supporting member. The injecting nozzle
injects the treating solution in the shape of a minute particle to
the substrate to dry the substrate. A process of drying the
substrate is as follows. A treating gas is injected into a gas flow
path of the injecting nozzle surrounding the chemical solution flow
path and the treating solution is injected into a chemical flow
path of the injecting nozzle. A stream of the treating gas which is
injected in the gas flow path is controlled to discharge the
treating gas to the substrate and the treating solution of the
chemical solution flow path is discharged to the substrate to
decompose the treating solution in the shape of a minute
particle.
BRIEF DESCRIPTION OF THE FIGURES
[0007] FIG. 1 illustrates a substrate treatment apparatus according
to an embodiment of the present invention.
[0008] FIG. 2 is a perspective view of a treating solution
injection portion shown in FIG. 1.
[0009] FIG. 3 is a cross-sectional view of an injection nozzle
shown in FIG. 2.
[0010] FIG. 4 illustrates the steps of injecting a treating
solution from the injection nozzle shown in FIG. 3.
[0011] FIG. 5 is a cross-sectional view of another type of a
treating solution injection portion shown in FIG. 2.
[0012] FIGS. 6 and 7 are top plan views of a first nozzle portion
shown in FIG. 5.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0013] The present invention now will be described more fully
hereinafter with reference to the accompanying drawings, in which
embodiments of the invention are shown. This invention may,
however, be embodied in many different forms and should not be
construed as limited to the embodiments set forth herein. Rather,
these embodiments are provided so that this disclosure will be
thorough and complete, and will fully convey the scope of the
invention to those skilled in the art. In the drawings, the size
and relative sizes of layers and regions may be exaggerated for
clarity. Like numbers refer to like elements throughout.
[0014] FIG. 1 illustrates a substrate treatment apparatus according
to an embodiment of the present invention.
[0015] Referring to FIG. 1, a substrate treating apparatus 600
includes a treating vessel 100, a substrate supporting member 200,
a vertical moving member 310, a rotating motor 320 and a treating
solution supplying portion 400.
[0016] The treating vessel 100 includes first, second and third
collection tubs having a cylindrical shape. In the present
embodiment, the treating vessel 100 is constituted of three
collection tubs 110, 120 and 130. However, the number of the
collection tubs 110, 120 and 130 may be increased or decreased.
[0017] The first to third collection tubs 110, 120 and 130 collect
a treating solution supplied to a wafer 10 during a treating
process. That is, the substrate treating apparatus 600 treats the
wafer 10 using the treating solution while the wafer 10 is rotated
by the substrate supporting member 200. Thus, the treating solution
supplied to the wafer 10 is scattered and the first to third
collection tubs 110, 120 and 130 collect a scattered treating
solution from the wafer 10.
[0018] More specifically, each of the first to third collection
tubs 110, 120 and 130 includes a bottom surface having a ring shape
and a sidewall of a cylindrical shape extended from the bottom
surface. The second collection tub 120 surrounds the first
collection tub 110 and is disposed to be separated from the first
collection tub 110. The third collection tub 130 surrounds the
second collection tub 120 and is disposed to be separated from the
second collection tub 120.
[0019] The first to third collection tubs 110, 120 and 130 form
first to third collection spaces RS1, RS2 and RS3 in which treating
solution scattered from the wafer 10 flows. The first collection
space SR1 is defined by the first collection tub 110 and collects a
first treating solution which firstly treats the wafer 10. The
second collection space SR2 is defined by a separated space between
the first and second collection tubs 110 and 120, and collects a
second treating solution which secondly treats the wafer 10. The
third collection space SR3 is defined by a separated space between
the second and third collection tubs 120 and 130, and collects a
third treating solution which thirdly treats the wafer 10. The
third treating solution may be rinsing solution which rinses the
wafer 10.
[0020] In the embodiment stated above, each of the treating
solutions is collected from the first tub 110 to third collection
tub 130 in order according to a treatment process of the wafer 10
but a collecting order of treating solution of the first to third
collection tubs 110, 120 and 130 may be changed according to a
treating process and a location of the wafer 10.
[0021] Each of the first to third collection tubs 110, 120 and 130
has a top surface with an opened center. The top surfaces of the
first to third collection tubs 110, 120 and 130 are downwardly
inclined toward edges thereof. Accordingly, treating solution
scattered from the wafer 10 is guided in the collection spaces RS1,
RS2 and RS3 along top surfaces of the first to third collection
tubs 110, 120 and 130.
[0022] The first collection tub 110 is connected to a first
collection line 141. The first treating solution which is injected
in the first collection space RS1 flows out through the first
collection line 141. The second collection tub 120 is connected to
a second collection line 143. The second treating solution which is
injected in the second collection space RS2 flows out through the
second collection line 143. The third collection tub 130 is
connected to a third collection line 145. The third treating
solution which is injected in the third collection space RS3 flows
out through the third collection line 145.
[0023] The treating vessel 100 is combined with a vertical moving
member 310 which changes a vertical location of the treating vessel
100. The vertical moving member 310 is disposed at an outer
sidewall of the third collection tub 130 and moves the treating
vessel 100 up and down when a vertical location of the substrate
supporting member 200 is fixed. As a result, a relative vertical
location between the treating vessel 100 and the wafer 10 is
changed. Thus, the treating vessel 100 may have each of the
collection spaces RS1, RS2 and RS3 collect a different kind of
treating solution and contamination gas.
[0024] In the embodiment, the substrate treating apparatus 600
changes a relative vertical location between the treating vessel
100 and the substrate supporting member 200 by vertically moving
the treating vessel 100. Alternatively, the substrate treating
apparatus 600 may change a relative vertical location between the
treating vessel 100 and the substrate supporting member 200 by
vertically moving the substrate supporting member 200.
[0025] The substrate supporting member 200 is accommodated in the
treating vessel 100. The substrate supporting member 200 includes a
spin head 210, a rotation axis 220 and a fixed axis 230.
[0026] The spin head 210 has a circle plate shape and a top surface
of the spin head 210 faces the wafer 10. A plurality of chucking
pins 211 supporting the wafer 10 is provided on the top surface of
the spin head 210. The chucking pins 211 fix the wafer 10 on the
spin head 210 by chucking the wafer 10.
[0027] The rotation axis 220 is combined with a bottom surface of
the spin head 210. The rotation axis 220 is connected to a rotation
motor 320 and rotates with respect to a central axis by a rotation
power of the rotation motor 320. A rotation power of the rotation
axis 220 is transferred to the spin head 210. Thus, the spin heads
210 rotates and the wafer fixed to the spin head 210 rotates.
[0028] The rotation axis 220 is combined with the fixed axis 230. A
portion of the fixed axis 230 is inserted into the rotation axis
220 and is combined with the rotation axis 220 using a plurality of
bearings (not shown). Accordingly, the fixed axis 230 does not
rotate and the rotation axis 220 only rotates.
[0029] The treating solution supplying portion 400 dries the wafer
10 by supplying the treating solution to the wafer 10. The treating
solution supplying portion 400 includes a treating solution
injection portion 410 which injects the treating solution to the
wafer 10, a first moving portion 450 which horizontally moves the
treating solution injection portion 410, a connection portion 460
which connects the treating solution injection portion 410 and the
first moving portion 450 and a second moving portion 479 which
vertically moving the treating solution injection portion 410. The
first moving portion 450 is provided on an upper portion of the
treating vessel 100 and disposed on an upper portion of the
treating solution injection portion 410. The connection portion 460
is connected to a first portion of the first moving portion 450 and
the connection portion 460 is combined with the treating solution
injection portion 410 by extending from a bottom surface of the
first moving portion 450 to a lower part. The second moving portion
470 extends from a second portion of the first moving portion 450
to face the connection portion 460 and installed at an outside of
the treating vessel 100. The second moving portion 470 moves up and
down to control a separated distance between the treating solution
injection portion 410 and the wafer 10.
[0030] The treating solution injection portion 410 is connected to
a chemical solution supplying portion 510 to receive the treating
solution. The treating solution injection portion 410 is also
connected to the gas supplying portion 520 to receive a treating
gas. The treating solution and the treating gas are constituted of
isopropyl alcohol and nitrogen gas, respectively. The treating
solution injection portion 410 cleans the wafer 10 by injecting the
treating gas and the treating solution at the same time. A
separated distance and a relative location between the treating
solution injection portion 410 and the wafer 10 are controlled by
the first and second moving portions 450 and 470. As a result, an
injection location of the treating solution injection portion 410
is controlled.
[0031] Hereinafter, referring to drawings, the treating solution
injection portion 410 will be described in detail.
[0032] FIG. 2 is a perspective view of a treating solution
injection portion shown in FIG. 1, and FIG. 3 is a cross-sectional
view of an injection nozzle shown in FIG. 2.
[0033] Referring to FIGS. 1 and 2, the treating solution injection
portion 410 includes a first supplying nozzle 420, a second
supplying nozzle 430 and an injection nozzle 440.
[0034] The first supplying nozzle 420 is combined with a top
surface of the injection nozzle 440 and connected to the chemical
solution supplying portion 510. The first supplying nozzle 420
supplies the treating solution CL from the chemical solution
supplying portion 510 to the injection nozzle 440.
[0035] The second supplying nozzle 430 is combined with one side of
the injection nozzle 440 and connected to the gas supplying portion
520. The second supplying nozzle 430 supplies the treating gas CG
from the gas supplying portion 520 to the injection nozzle 440.
[0036] Referring to FIGS. 2 and 3, the injection nozzle 420 is
constituted of a first nozzle portion 441 receiving the treating
solution CL and a second nozzle portion 443 receiving the treating
gas CG. The first nozzle portion 441 has a cylindrical shape and is
connected to the first supplying nozzle 420. A chemical solution
flow path 441a through which the treating solution CL supplied from
the first supplying nozzle 420 moves is formed in the first nozzle
portion 441. A first injection hole 441b is formed at a lower
portion of the first nozzle portion 441. The first injection hole
441b discharges the treating solution CL which is injected in the
chemical solution flow path 441a to the outside.
[0037] The second nozzle portion 443 surrounds the first nozzle
portion 441 and has a cylindrical shape. An upper portion of the
second nozzle portion 443 is combined with the first nozzle portion
441. A one side of the second nozzle portion 443 is connected to
the second supplying nozzle 430 to receive the treating gas CG from
the second supplying nozzle 430. The second nozzle portion 443 is
partially separated from the first nozzle portion 441, so that a
gas flow path 443a in which the treating gas flows is formed
between the first and second nozzle portions 441 and 443. A second
injection hole 443b is formed at a lower portion of the second
nozzle portion 443. The second injection hole 443b is formed in the
shape of ring surrounding the first injection hole 441b and
discharge the treating gas CG which is injected in the gas flow
path 443a from the second supplying nozzle 430 to the outside.
[0038] A lower portion of the second nozzle portion 443 which
defines the second injection hole 443b bends toward the first
injection hole 441b. Thus, since a width of the second injection is
smaller than a width of the gas flow path 443a, a treating gas
pressure CG in the second injection hole 443b is higher than a
treating gas pressure CG in the gas flow path 443a. Also, since a
lower portion of the second nozzle portion 443 bends toward inside,
the treating gas CG discharged from the second injection hole 443b
is guided toward the first injection hole 441b.
[0039] A treating gas CG discharged from the second injection hole
443b is provided to a treating solution CL discharged from the
first injection hole 441b and the treating solution CL discharged
from the first injection hole 441b is decomposed into the shape of
a minute particle. The minute particles are provided to a surface
of the wafer 10 to dry the wafer 10.
[0040] FIG. 4 illustrates the steps of injecting a treating
solution from the injection nozzle shown in FIG. 3.
[0041] Referring to FIGS. 1 and 4, first, the wafer 10 is fixedly
disposed on the spin head 210 and the treating solution injection
portion 410 is disposed over the wafer 10.
[0042] The rotation axis 220 rotates by driving the rotation motor
320 and the spin head 210 rotates by a rotation power of the
rotation axis 220, so that the wafer 10 rotates. The first
supplying nozzle 420 of the treating solution injection portion 410
receives the treating solution CL from the chemical supplying
portion 510 and provides the treating solution to the injection
nozzle 440.
[0043] The injection nozzle 440 injects the treating solution CL
into the wafer 10 which is rotating in the shape of a minute
particle by discharging the treating gas CG and the treating
solution CL at the same time, so that the wafer 10 is dried.
[0044] A process that the injection nozzle 440 injects the treating
solution CL and the treating gas CG is as follows. First, the
treating solution CL discharged from the chemical supplying portion
510 is provided to the first nozzle portion 441 of the injection
nozzle 440 and is injected into the chemical solution flow path
441a of the first nozzle portion 441.
[0045] The treating gas CG discharged from the gas supplying
portion 520 is provided to the second nozzle portion 443 of the
injection nozzle 440 and is injected into the gas flow path
443a.
[0046] The treating solution CL which is injected in the chemical
solution flow path 441a is discharged through the first injection
hole 441b to the outside. At the same time, the treating gas CG
which is injected in the gas flow path 443a is discharged through
the second injection hole 443b to the outside. The treating
solution CL discharged from the first injection hole 441b is
decomposed into the shape of a minute particle by a pressure of the
treating gas CG and provided to the wafer 10. As a result, the
wafer 10 is cleaned.
[0047] When the second nozzle portion 443 discharges the treating
gas CG, the second nozzle portion 443 injects the treating gas CG
toward a path to which the treating solution CL is discharged from
the first injection hole 441b since a lower portion of the second
nozzle portion 443 bends toward inside. Thus, since the treating
gas is sufficiently provided to the treating solution discharged
from the first injection hole 441b, a size and the amount used of a
minute particle of the treating solution CL are reduced and a
diffusion rate of the treating solution CL is increased. Therefore,
a cleaning efficiency and a productivity of the wafer 10 are
improved and a manufacturing cost can be reduced.
[0048] FIG. 5 is a cross-sectional view of another type of a
treating solution injection portion shown in FIG. 2, and FIGS. 6
and 7 are top plan views of a first nozzle portion shown in FIG. 5.
Specifically, FIG. 6 is a side view of the first nozzle portion
481, and FIG. 7 is a bottom plan view of the first nozzle portion
481.
[0049] Referring to FIGS. 5 and 6, a treating solution injection
portion 490 includes first and second supplying nozzles 420 and
430, and an injection nozzle 480.
[0050] The first supplying nozzle 420 receives the treating
solution CL from the chemical solution supplying portion 510 and
provides the treating solution CL to the injection nozzle 480. The
second supplying nozzle 430 receives the treating gas CG from the
gas supplying portion 520 and provides the treating gas CG to the
injection nozzle 480.
[0051] The injection nozzle 480 includes a first nozzle portion 481
which injects the treating solution CL and a second nozzle portion
482 which injects the treating gas CG.
[0052] More specifically, the first nozzle portion 481 includes a
body portion 481a and a gas guide portion 481b. The body portion
481a has a cylindrical shape. An upper portion of the body portion
481a is connected to the first supplying nozzle 420 to receive the
treating solution CL from the first supplying nozzle 420. A
chemical flow path 81a through which the treating solution CL
supplied from the first supplying nozzle 420 moves is formed in the
body portion 481a. Also, a first injection hole 81b is formed in a
lower portion of the body portion 481a. The first injection hole
81b discharges the treating solution CL which is injected in the
chemical flow path 81a to the outside.
[0053] The gas guide portion 481b is formed in a lower portion of
the body portion 481a. The gas guide portion 481b protrudes from an
outer wall of the body portion 481a and a plurality of guide holes
81c controlling a stream of the treating gas is formed around the
gas guide portion 481b.
[0054] The second nozzle portion 483 surrounds the first nozzle
portion 481 and has a cylindrical shape. An upper portion of the
second nozzle portion 483 is combined with the first nozzle portion
481. One side of the second nozzle portion 483 is connected to the
second supplying nozzle 420 to receive the treating gas CG from the
second supplying nozzle 420.
[0055] Also, the second nozzle portion 483 is partially separated
from the first nozzle portion 481, so that a gas flow path 83a in
which the treating gas CG flows is formed between the first and
second nozzle portion 481 and 483. A second injection hole is
formed at a lower portion of the second nozzle portion 483. The
second injection hole 83b has a ring shape surrounding the first
injection hole 81b and discharges the treating gas CG which is
injected in the gas flow path 83a from the second supplying nozzle
430 to the outside.
[0056] The gas guide portion 481b is disposed to be adjacent the
second injection hole 83b and is combined with an inner wall of the
second nozzle portion 483. The treating gas which is injected in
the gas flow path 83a is discharged through the second injection
hole 83b to the outside after going by way of the guide holes of
the gas guide portion 481b.
[0057] Referring to FIGS. 6 and 7, the guide holes are disposed to
be separated from each other. The treating gas CG moves along the
guide holes 81c and is injected through the second injection hole
83b. Since the guide holes 81c is disposed in the shape of a spiral
structure with respect to the body portion 481a, a stream of the
treating gas CG is formed in the shape of a spiral structure
according to a shape of the guide holes 81c.
[0058] Therefore, since a treating gas CG discharged from the
second injection hole 83b is guided to a flow path to which the
treating solution CL is discharged, the treating solution CL is
decomposed into the shape of a minute particle. The minute particle
of the treating solution CL is provided to a surface of the wafer
10 to dry the wafer 10.
[0059] Since a stream of the treating gas CG is formed in the shape
of a spiral by the guide holes 81c, the injection nozzle 480 can
minimize a size of the minute particle of the treating solution CL,
so that a diffusion rate of the treating solution CL is increased.
Thus, the injection nozzle 480 improves a cleaning efficiency and a
productivity of the wafer 10 and reduces a manufacturing cost. In
the present embodiment, the guide holes 81c are disposed in the
shape of a spiral structure. However, the guide holes 81c may be
disposed in a radial shape with respect to the body portion
481a.
* * * * *