U.S. patent application number 12/327869 was filed with the patent office on 2009-04-02 for end face sensor and method of producing the same.
This patent application is currently assigned to IDEAL STAR INC.. Invention is credited to Satoshi Fujimoto, Yasuhiko KASAMA, Kenji Omote.
Application Number | 20090083978 12/327869 |
Document ID | / |
Family ID | 32501049 |
Filed Date | 2009-04-02 |
United States Patent
Application |
20090083978 |
Kind Code |
A1 |
KASAMA; Yasuhiko ; et
al. |
April 2, 2009 |
END FACE SENSOR AND METHOD OF PRODUCING THE SAME
Abstract
An end face sensor device that has flexibility or bendability
without being limited to its shape and can generate various
apparatus with any shapes, and a method of producing the end face
sensor device are provided. The end face sensor device is
characterized in that a receiving part for receiving information
from a subject and outputting the information as another
information is formed on an end face of a linear body.
Inventors: |
KASAMA; Yasuhiko;
(Sendai-shi, JP) ; Omote; Kenji; (Sendai-shi,
JP) ; Fujimoto; Satoshi; (Sendai-shi, JP) |
Correspondence
Address: |
YOUNG & THOMPSON
209 Madison Street, Suite 500
ALEXANDRIA
VA
22314
US
|
Assignee: |
IDEAL STAR INC.
Miyagi
JP
|
Family ID: |
32501049 |
Appl. No.: |
12/327869 |
Filed: |
December 4, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10538937 |
Dec 9, 2005 |
|
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PCT/JP2003/015975 |
Dec 12, 2003 |
|
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12327869 |
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Current U.S.
Class: |
29/854 |
Current CPC
Class: |
G01D 11/245 20130101;
Y10T 29/49169 20150115; Y10T 29/49007 20150115 |
Class at
Publication: |
29/854 |
International
Class: |
H05K 13/00 20060101
H05K013/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 12, 2002 |
JP |
2002-361538 |
Claims
1. A method of producing an end face sensor device, comprising the
steps of: bundling plural linear bodies together to form a bundle
of plural linear bodies; and forming receiving parts on respective
end faces of each of the linear bodies of said bundle.
2. A method of producing a multi-functional end face sensor device,
comprising the steps of: bundling linear bodies together to form
plural bundles, each of the plural bundles comprising a bundle of
plural linear bodies; forming receiving parts on end faces of each
of the plural bundles so that the receiving parts of each of the
bundles has a different function, at least a first bundle having
end faces of a first function and a second bundle having end faces
of a second function; removing the linear bodies from the plural
bundles; and rebundling the removed linear bodies into a new bundle
that is a multi-functional comprising end faces of different
functions, including at least a first linear body having a
corresponding end face of the first function and a second linear
body having a corresponding end face of the second function.
3. A method of producing an end face sensor device, comprising the
steps of: disposing at least one pair of electrodes in a linear
body; forming a film on an end face of the linear body while a bias
voltage is applied between the electrodes.
4. A method of producing an end face sensor device as claimed in
claim 3, wherein the one pair of electrodes are disposed in a
center and a outer circumference of said linear body.
5. A method of producing an end face sensor device as in any one of
claim 3, wherein the film is made of a conductive polymer.
6. A method of producing an end face sensor device as claimed in
claim 5, wherein a length of one molecule of the conductive polymer
is shorter than or equal to a distance between the electrodes.
7. An end face sensor device as claimed in claim 3, wherein the
bias voltage is a DC voltage.
8. A method of producing an end face sensor device as claimed in
claim 3, wherein the bias voltage is an AC voltage.
9. A method of producing an end face sensor device as claimed in
claim 3, wherein the bias voltage comprises both a DC bias voltage
and an AC bias voltage superimposed and applied between the
electrodes.
10. A method of producing an end face sensor device as claimed in
claim 8, wherein a frequency of the AC bias voltage is changed with
time.
11. The method of claim 1, wherein each linear body comprises: a
conductive polymer center electrode (2007) with an outer
circumference of the center electrode coated with an insulating
film made of polymer (2008), the linear body being flexible along a
length of the linear body; and the receiving part is for receiving
information from a subject and outputting the information as
another information formed on the end face of the linear body, the
receiving part being a sensor coated with a transparent electrode
(2006) extending along the length of the linear body, the
transparent electrode defining a final exterior surface of the
length of the linear body exposed to the atmosphere.
12. The method of claim 11, wherein the sensor is a light sensor
comprising an active portion made of a conductive polymer.
13. The method of claim 11, wherein the sensor is a light sensor
comprised of any of a photodiode, a phototransistor, a photo IC, a
photo thyristor, a photoconductive element, a pyroelectric element,
a color sensor, a solid-state image sensor, an element for position
detection, and a solar battery.
14. The method of claim 11, wherein a part or all of the receiving
part is formed of a polymer.
15. The method of claim 11, wherein each linear body further
comprises a linear element in which a circuit element is formed
continuously or intermittently in a longitudinal direction.
16. The method of claim 11, wherein each linear body further
comprises a linear element in which a cross section having plural
regions for forming a circuit is formed continuously or
intermittently in a longitudinal direction.
17. The method of claim 3, wherein the linear body comprises: a
conductive polymer center electrode (2007) with an outer
circumference of the center electrode coated with the film, the
film being an insulating film made of polymer (2008), the linear
body being flexible along a length of the linear body; and a
receiving part for receiving information from a subject and
outputting the information as another information formed on the end
face of the linear body, the receiving part being a sensor coated
with a transparent electrode (2006) extending along the length of
the linear body, the transparent electrode defining a final
exterior surface of the length of the linear body exposed to the
atmosphere.
18. The method of claim 17, wherein the sensor is a light sensor
comprising an active portion made of a conductive polymer.
19. The method of claim 17, wherein the sensor is a light sensor
comprised of any of a photodiode, a phototransistor, a photo IC, a
photo thyristor, a photoconductive element, a pyroelectric element,
a color sensor, a solid-state image sensor, an element for position
detection, and a solar battery.
20. The method of claim 17, wherein, a part or all of the receiving
part is formed of a polymer, and the linear body further comprises
a linear element in which a circuit element is formed continuously
or intermittently in a longitudinal direction.
Description
TECHNICAL FIELD
[0001] The present invention relates to a linear element and a
method of producing the linear element.
BACKGROUND ART
[0002] At present, various sensors become widespread and efforts
are made to achieve higher integration and higher density. As one
of the efforts, an art of performing integration in a
three-dimensional manner is also attempted.
[0003] However, in any of the sensors, a rigid substrate such as a
wafer is used as a basic component. As long as the rigid substrate
is used as the basic component, its producing method is subjected
to certain constraints and also there is a limit to the degree of
integration. Further, a device shape is limited to a constant
shape.
[0004] Also, conductive fiber in which a surface of cotton or silk
is plated or wrapped with conductive material of gold or copper has
been known.
[0005] However, an art of forming a circuit element inside one yarn
has not been known. Also, in conductive fiber, the yarn itself such
as cotton or silk is used as a basic component and the conductive
fiber has the yarn itself in the center.
[0006] An object of the present invention is to provide an end face
sensor device which has flexibility or bendability without being
limited to its shape and can generate various apparatus with any
shapes, and a method of producing the end face sensor device.
DISCLOSURE OF THE INVENTION
[0007] An end face sensor device of the present invention is
characterized in that a receiving part for receiving information
from a subject and outputting the information as another
information is formed on an end face of a linear body.
[0008] Here, linear elements described below can be applied as the
linear body. Also, dimensions and producing methods can apply
correspondingly to those described for the linear elements.
[0009] It is characterized in that the receiving part is a light
sensor.
[0010] It is characterized in that the light sensor is any of a
photodiode, a phototransistor, a photo IC, a photo thyristor, a
photoconductive element, a pyroelectric element, a color sensor, a
solid-state image sensor, an element for position detection, and a
solar battery.
[0011] It is characterized in that the receiving part is a
temperature sensor.
[0012] It is characterized in that the receiving part is a humidity
sensor.
[0013] It is characterized in that the receiving part is an
ultrasonic sensor.
[0014] It is characterized in that the receiving part is a pressure
sensor.
[0015] It is characterized in that a part or all of the receiving
part is formed using a conductive polymer.
[0016] It is characterized in that only one molecule of the
conductive polymer is present between electrodes.
[0017] It is characterized in that the linear body is a linear
element in which a circuit element is formed continuously or
intermittently in a longitudinal direction.
[0018] It is characterized in that the linear body is a linear
element in which a cross section having plural regions for forming
a circuit is formed continuously or intermittently in a
longitudinal direction.
[0019] A method of producing an end face sensor device of the
present invention is characterized in that plural linear bodies are
bundled to form a bundle and receiving parts are formed every said
bundle.
[0020] A method of producing a multi-functional end face sensor
device of the present invention is characterized in that plural
bundles in which plural linear bodies are bundled are prepared and
receiving parts with different functions every each of the bundles
are formed and then the linear bodies are taken out of each of the
bundles and said linear bodies taken out are bundled.
[0021] A method of producing an end face sensor device of the
present invention is characterized in that one pair of electrodes
are disposed in a linear body and a film is formed on an end face
of the linear body while a bias voltage is applied between said
electrodes.
[0022] It is characterized in that the bias voltage is an AC
voltage.
[0023] It is characterized in that the film is made of a conductive
polymer.
[0024] It is characterized in that a length of one molecule of the
conductive polymer is shorter than or equal to a distance between
the electrodes.
[Linear Element]
[0025] (Linear element 1) A linear element characterized in that a
circuit element is formed continuously or intermittently in a
longitudinal direction.
[0026] (Linear element 2) A linear element characterized in that a
cross section having plural regions in which a circuit is formed is
formed continuously or intermittently in a longitudinal
direction.
[0027] (Linear element 3) A linear element as described in the
linear element 1 or 2, characterized in that the element is an
energy conversion element.
[0028] (Linear element 4) A linear element as described in the
linear element 1 or 2, characterized in that the element is an
electronic circuit element or an optical circuit element.
[0029] (Linear element 5) A linear element as described in the
linear element 1 or 2, characterized in that the element is a
semiconductor element.
[0030] (Linear element 6) A linear element as described in the
linear element 1 or 2, characterized in that the element is a
diode, a transistor or a thyristor.
[0031] (Linear element 7) A linear element as described in the
linear element 1 or 2, characterized in that the element is a light
emitting diode, a semiconductor laser or a light receiving
device.
[0032] (Linear element 8) A linear element as described in the
linear element 1 or 2, characterized in that the element is a DRAM,
an SRAM, a flash memory or other memories.
[0033] (Linear element 9) A linear element as described in the
linear element 1 or 2, characterized in that the element is a
photovoltaic element.
[0034] (Linear element 10) A linear element as described in the
linear element 1 or 2, characterized in that the element is an
image sensor element or a secondary battery element.
[0035] (Linear element 11) A linear element as described in any one
of the linear elements 1-10, characterized in that a longitudinal
cross-sectional shape has a circle, a polygon, a star shape, a
crescent shape, a pedal shape, a character shape or any other
shapes.
[0036] (Linear element 12) A linear element as described in any one
of the linear elements 1-11, characterized in that plural exposure
parts are had in the linear side.
[0037] (Linear element 13) A linear element as described in any one
of the linear elements 1-12, characterized in that all or a part of
the linear element is an element formed by extrusion
processing.
[0038] (Linear element 14) A linear element as described in the
linear element 13, characterized in that a part or all of the
linear element is an element formed by further drawing processing
after extrusion processing.
[0039] (Linear element 15) A linear element as described in any one
of the linear elements 12-14, characterized in that the linear
element is an element processed by further expansion after
extrusion processing.
[0040] (Linear element 16) A linear element as described in the
linear element 15, characterized by being formed in a ring shape or
a spiral shape after the expansion processing.
[0041] (Linear element 17) A linear element as described in the
linear element 16, characterized in that the ring is a multiple
ring.
[0042] (Linear element 18) A linear element as described in the
linear element 17, characterized in that the multiple ring is made
of different materials.
[0043] (Linear element 19) A linear element as described in any one
of the linear elements 16-18, characterized in that a part of the
ring or the spiral forms an exposure part.
[0044] (Linear element 20) A linear element as described in any one
of the linear elements 16-19, characterized in that a part or the
entire void of the ring or the spiral is filled with other
materials.
[0045] (Linear element 21) A linear element as described in any one
of the linear elements 1-20, characterized in that an outside
diameter is 10 mm or smaller.
[0046] (Linear element 22) A linear element as described in any one
of the linear elements 1-21, characterized in that an outside
diameter is 1 mm or smaller.
[0047] (Linear element 23) A linear element as described in any one
of the linear elements 1-20, characterized in that an outside
diameter is 1 .mu.m or smaller.
[0048] (Linear element 24) A linear element as described in any one
of the linear elements 1-23, characterized in that an aspect ratio
is 10 or more.
[0049] (Linear element 25) A linear element as described in any one
of the linear elements 1-24, characterized in that an aspect ratio
is 100 or more.
[0050] (Linear element 26) A linear element as described in any one
of the linear elements 1-25, characterized in that a gate electrode
region, an insulating region, source and drain regions, and a
semiconductor region are formed inside a cross section.
[0051] (Linear element 27) A linear element as described in the
linear element 26, characterized in that a gate electrode region is
had in the center and on the outside of the gate electrode region,
an insulating region, source and drain regions, and a semiconductor
region are sequentially formed.
[0052] (Linear element 28) A linear element as described in the
linear element 26, characterized in that a hollow region or an
insulating region is had in the center and on the outward portion
of the region, a semiconductor region is had and inside said
semiconductor region, source and drain regions are had so as to
outwardly expose some regions and on the outward portion of the
regions, an insulating region and a gate electrode region are
had.
[0053] (Linear element 29) A linear element as described in any one
of the linear elements 1-26, characterized in that a region having
at least a pn junction or a pin junction is formed inside a cross
section.
[0054] (Linear element 30) A linear element as described in any one
of the linear elements 1-29, characterized in that a semiconductor
region in which the circuit is formed is made of an organic
semiconductor material.
[0055] (Linear element 31) A linear element as described in the
linear element 30, characterized in that the organic semiconductor
material is polythiophene or polyphenylene.
[0056] (Linear element 32) A linear element as described in any one
of the linear elements 1-31, characterized in that a conductive
region in which the circuit is formed is made of a conductive
polymer.
[0057] (Linear element 33) A linear element as described in the
linear element 32, characterized in that the conductive polymer is
polyacetylene, polyphenylene vinylene, or polypyrrole.
[0058] (Linear element 34) A linear element as described in any one
of the linear elements 1-33, characterized in that a different
circuit element is formed in any position of a longitudinal
direction.
[0059] (Linear element 35) A linear element as described in any one
of the linear elements 1-34, characterized in that a circuit
element isolation region is had in any position of a longitudinal
direction.
[0060] (Linear element 36) A linear element as described in any one
of the linear elements 1-35, characterized in that a portion with a
different cross-sectional outside diameter shape is had in any
position of a longitudinal direction.
[0061] (Linear element 37) A linear element as described in any one
of the linear elements 1-36, characterized in that a part of the
region is constructed of a conductive polymer and the degree of
longitudinal orientation of molecular chains is 50% or higher.
[0062] (Linear element 38) A linear element as described in any one
of the linear elements 1-36, characterized in that a part of the
region is constructed of a conductive polymer and the degree of
longitudinal orientation of molecular chains is 70% or higher.
[0063] (Linear element 39) A linear element as described in any one
of the linear elements 16-20, characterized in that a part of the
region is constructed of a conductive polymer and the degree of
circumferential orientation of molecular chains is 50% or
higher.
[0064] (Linear element 40) A linear element as described in any one
of the linear elements 16-20, characterized in that a part of the
region is constructed of a conductive polymer and the degree of
circumferential orientation of molecular chains is 70% or
higher.
[0065] (Linear element 41) A method of producing a linear element,
characterized in that a material for forming a region in which a
circuit element is formed is dissolved, melted or gelled and said
material is linearly extruded in a desired shape.
[0066] (Linear element 42) A method of producing a linear element
as described in the linear element 41, characterized in that a part
of the region is formed of a conductive polymer.
[0067] (Linear element 43) A method of producing a linear element
as described in the linear element 41 or 42, characterized by
further performing drawing processing after the extrusion.
[0068] (Linear element 44) A method of producing a linear element
as described in claim 41 or 42, characterized by further performing
expansion processing after the extrusion processing.
[0069] (Linear element 45) A method of producing a linear element
as described in claim 43, characterized by further performing
expansion processing after the drawing processing.
[0070] (Linear element 46) A method of producing a linear element
as described in claim 44 or 45, characterized by being formed in a
ring shape after the expansion processing.
[0071] (Linear element 47) A method of producing a linear element
as described in any one of the linear elements 41-46, characterized
in that the method is a method of producing a linear element
laminated in multi layers outwardly from the center and a center
layer is formed in a yarn shape to form a primary yarn-shaped body
by extrusion and then while traveling said primary yarn-shaped
body, materials of outward layers are ejected on surfaces to
sequentially form the outward layers.
[0072] (Linear element 48) A method of forming a linear element as
described in the linear element 47, characterized in that a
difference between a travel speed and an ejection speed is set at
20 m/sec or higher at the time of extrusion of a conductive
polymer.
[0073] (Linear element 49) A linear element of a small unit formed
by slicing and separating a linear element as described in any one
of the linear elements 1-40 perpendicularly with respect to a
longitudinal direction.
[0074] (Linear element 50) A linear element as described in the
linear element 1, characterized in that an electrode is had in the
center and an insulating layer is formed on the outer circumference
of said center electrode and a semiconductor layer in which plural
pairs of source regions and drain regions are formed is formed on
the outer circumference of said insulating layer.
[0075] (Linear element 51) A linear element as described in the
linear element 1, characterized in that it is constructed so that
an electrode is had in the center and an insulating layer is formed
on the outer circumference of said center electrode and plural
semiconductor layers and insulating layers are alternately formed
on the outer circumference of said insulating layer and one or more
pairs of a source region and a drain region are formed in each of
the semiconductor layers and also a drain region or a drain
electrode in the inside layer is located between the source region
and the drain region.
[0076] (Linear element 52) A linear element as described in the
linear element 1, characterized in that a source electrode is had
in the center of a semiconductor layer and plural gate electrodes
are had intermittently in a circumferential direction on the
circumference of said source electrode through a semiconductor
layer and a drain electrode is had on the outer circumference of
said semiconductor layer.
[0077] As the linear elements described above, the following linear
elements can be applied. A selection could be made properly
according to use of a sensor. By using the linear element as a
linear body, an output signal from a receiving part can be, for
example, amplified. Also, the output signal from a receiving part
can be calculated.
[0078] A linear element is a linear element characterized in that a
circuit element is formed continuously or intermittently in a
longitudinal direction.
[0079] Also, it is a linear element characterized in that a cross
section having plural regions in which a circuit is formed is
formed continuously or intermittently in a longitudinal
direction.
[0080] It is a method of producing a linear element, characterized
in that a material for forming a region in which a circuit element
is formed is dissolved or melted and said material is linearly
extruded in a desired shape.
[0081] That is, in this linear element, plural regions are had so
as to form a circuit inside one cross section.
[0082] And, in the case of a linear element, the linear element
also includes a linear element whose top has a needle shape and
other shapes.
(Circuit Element)
[0083] Here, a circuit element includes, for example, an energy
conversion element. The energy conversion element is an element for
converting light energy into electrical energy or changing
electrical energy into light energy. The element includes an
electronic circuit element, a magnetic circuit element or an
optical circuit element. The circuit element differs from an
optical fiber for simply transmitting a signal and also differs
from a conductor.
[0084] The circuit element includes, for example, an electronic
circuit element or an optical circuit element. More specifically,
it is, for example, a semiconductor element.
[0085] According to classification by the difference in a
conventional process technique, a discrete (discrete
semiconductor), a light semiconductor, a memory, etc. are
given.
[0086] More specifically, the discrete includes a diode, a
transistor (a bipolar transistor, an FET, an insulated gate type
transistor), a thyristor, etc. The light semiconductor includes a
light emitting diode, a semiconductor laser, a light emitting
device (a photodiode, a phototransistor, an image sensor), etc.
Also, the memory includes a DRAM, a flash memory, an SRAM, etc.
(Formation of Circuit Element)
[0087] In the present invention, a circuit element is formed
continuously or intermittently in a longitudinal direction.
[0088] That is, it is placed so that plural regions are had inside
a cross section perpendicular to the longitudinal direction and
said plural regions form one circuit element, and such a cross
section extends in a yarn shape continuously or intermittently in
the longitudinal direction.
[0089] For example, for an NPN bipolar transistor, the bipolar
transistor is constructed of three regions of an emitter N region,
a base P region and a collector P region. Therefore, these three
regions are placed inside a cross section in a state of providing
necessary junction between the regions.
[0090] As its placement method, for example, a method of
concentrically forming each of the regions and sequentially placing
each of the regions from the center is contemplated. That is, the
emitter region, the base region and the collector region could be
formed sequentially from the center. Of course, another placement
is also contemplated and the placement with the same topology could
be used properly.
[0091] And, an electrode connected to each of the regions may be
connected to each of the regions from an end face of a yarn-shaped
element. Also, the electrode may be buried in each of the regions
from the beginning. That is, in the case of concentrically placing
each of the semiconductor regions, an emitter electrode could be
formed in the center of the emitter region and a base electrode
could be formed in the base region and a collector electrode could
be formed in the outer circumference of the collector region
continuously in a longitudinal direction in a manner similar to
each of the semiconductor regions. And, the base electrode could be
divided and placed.
[0092] The NPN bipolar transistor described above can be integrally
formed by an extrusion formation method described below.
[0093] In the above description, the NPN transistor has been taken
as an example, but similarly for other circuit elements, plural
regions could be placed inside a cross section in a state of
providing necessary junction to continuously form said cross
section in a longitudinal direction by, for example, extrusion.
(Continuous Formation, Intermittent Formation)
[0094] A circuit element has the same shape in any cross section in
the case of being formed continuously. This is in a state of being
commonly called a cookie-cutter pattern.
[0095] In said circuit element, the same element may be formed
continuously or intermittently in a longitudinal direction of a
linear shape.
(Linear Shape)
[0096] An outside diameter in a linear element in the present
invention is preferably 10 mm or smaller, and is more preferably 5
mm or smaller. The outside diameter is preferably 1 mm or smaller,
and is more preferably 10 .mu.m or smaller. Particularly, by
performing drawing processing, the outside diameter can also be set
at 1 .mu.m or smaller and further 0.1 .mu.m or smaller. In order to
weave linear elements and form fabric, a smaller outside diameter
is preferable.
[0097] In the case of attempting to eject a very thin linear body
having an outside diameter of 1 .mu.m or smaller from holes of a
die and form the linear body, clogging of the holes may occur or
breakage of a yarn-shaped body may occur. In such a case, linear
bodies of each of the regions are first formed. Next, using the
linear bodies as an island, many islands are formed and its
circumference (sea) is surrounded by a soluble substance and it is
bundled by a funnel-shaped mouthpiece and could be ejected as one
linear body from a small opening. When an island component is
increased and a sea component is decreased, a very thin linear body
element can be produced.
[0098] As another method, a thick linear body element could be once
formed and then be drawn in a longitudinal direction. Also, very
thinning can be achieved by riding a melted raw material in a jet
stream and performing a melt blow.
[0099] Also, an aspect ratio can be set at any value by extrusion
formation. In the case by spinning, the aspect ratio is preferably
1000 or more as a yarn shape. For example, the aspect ratio can
also be 100000 or more. In the case of using after cutting, the
aspect ratio may be set at 10 to 10000, 10 or less and further 1 or
less, 0.1 or less to form a linear element of a small unit.
(Intermittent Formation)
[0100] In the case of intermittently forming the same element,
elements adjacent in a longitudinal direction can be formed into
different elements. For example, a MOSFET (1), an
element-to-element isolation layer (1), a MOSFET (2), an
element-to-element isolation layer (2), . . . , a MOSFET (n), an
element-to-element isolation layer (n) could be formed sequentially
in the longitudinal direction.
[0101] In this case, a length of the MOSFET (k) (k=1 to n) may be
equal to a length of another MOSFET or may be different from the
length of another MOSFET. A selection can be made properly
according to characteristics of a desired circuit element. Similar
conditions apply to a length of the element-to-element isolation
layer.
[0102] Of course, another layer may be interposed between the
MOSFET and the element isolation layer.
[0103] In the above description, the MOSFET has been taken as an
example, but in the case of forming another element, a layer
necessary for use of another element could be inserted
intermittently.
(Cross-Sectional Shape)
[0104] A cross-sectional shape of a linear element is not
particularly limited. For example, the cross-sectional shape could
be a circle, a polygon, a star shape and other shapes. For example,
it may be a polygon shape in which plural vertical angles form
acute angles.
[0105] Also, cross sections of each of the regions can be set
arbitrarily. That is, for example, for a structure shown in FIG. 1,
a gate electrode may have a star shape and the outside shape of a
linear element may be a circle shape. When a surface of contact
with an adjacent layer wants to be increased depending on an
element, it is preferable to use a polygon shape in which a
vertical angle forms an acute angle.
[0106] And, a cross-sectional shape can easily be implemented in a
desired shape by setting a shape of an extrusion dice in said
desired shape.
[0107] In the case of forming a cross section of the outermost
layer in a star shape or a shape in which a vertical angle forms an
acute angle, after extrusion formation, any other materials can be
buried in space between the mutual vertical angles by, for example,
dipping and characteristics of an element can be changed depending
on uses of the element.
[0108] Also, by fitting a linear element with a concave
cross-sectional shape into a linear element with a convex
cross-sectional shape, connection between the linear elements can
be made effectively.
[0109] And, when a semiconductor layer wants to be doped with
impurities, the impurities may be contained in a melt raw material,
but after extrusion formation, the semiconductor layer may be
passed through a vacuum chamber in a linear state to be doped with
the impurities inside the vacuum chamber by, for example, an ion
implantation method. When the semiconductor layer is formed in the
inside rather than the outermost layer, ions could be implanted in
only the semiconductor layer which is an inside layer by
controlling ion application energy.
(Production Example, Post Processing Formation)
[0110] The above production example is an example of integrally
forming an element having plural layers by extrusion, but it may be
formed by linearly forming a basic part of an element by extrusion
and then coating said basic part by a proper method.
(Raw Material)
[0111] It is preferable to use a conductive polymer as materials of
an electrode, a semiconductor layer, etc. For example,
polyacetylene, polyacene, (oligoacene), polythiazyl, polythiophene,
poly(3-alkylthiophene), oligothiophene, polypyrrole, polyaniline,
polyphenylene, etc. are illustrated. The materials of the electrode
or the semiconductor layer could be selected from these in
consideration of conductivity etc.
[0112] And, as the materials of the semiconductor layer, for
example, polyparaphenylene, polythiophene, poly(3-methylthiophene),
etc. are preferably used.
[0113] Also, as source and drain materials, a material in which
dopant is mixed into the above semiconductor material could be
used. In order to form an n type, for example, alkali metals (Na,
K, Ca) etc. could be mixed. AsF.sub.5/AsF.sub.3 or ClO.sub.4.sup.-
may be used as the dopant.
[0114] And, fullerene may be put into a conductive polymer material
and may be used. In this case, it acts as an acceptor.
[0115] As insulating materials, general resin materials could be
used. Also, SiO.sub.2 and other inorganic materials may be
used.
[0116] And, in the case of a linear element of a structure having a
semiconductor region or a conductive region in the center, the
center region may be constructed of amorphous materials (metal
materials such as aluminum or copper; semiconductor materials such
as silicon). The center region could be formed by inserting a
linear amorphous material into the center of a die and traveling
the linear amorphous material and coating the outer circumference
of the linear amorphous material with another desired region by
injection.
BRIEF DESCRIPTION OF THE DRAWINGS
[0117] FIG. 1 is a perspective view showing a linear element
according to a linear element example.
[0118] FIG. 2 is a concept front diagram showing an example of a
production apparatus of the linear element.
[0119] FIG. 3 is a front view showing an extruder used in
production of the linear element and a plan view of a die.
[0120] FIG. 4 is a view showing a linear element example of a
linear element.
[0121] FIG. 5 is a plan view of a die used in production of the
linear element.
[0122] FIG. 6 is a sectional view showing a production process
example of a linear element.
[0123] FIG. 7 is a diagram showing a production process example of
a linear element.
[0124] FIG. 8 is a diagram showing a production example of a linear
element.
[0125] FIG. 9 is a perspective view showing a linear element
according to a linear element example.
[0126] FIG. 10 is a sectional view showing a linear element
according to a linear element example.
[0127] FIG. 11 is a process diagram showing a production example of
a linear element.
[0128] FIG. 12 is a perspective view showing a production example
of a linear element.
[0129] FIG. 13 is a diagram showing an example applied to an
integrated circuit apparatus.
[0130] FIG. 14 is a diagram showing an example applied to an
integrated circuit apparatus.
[0131] FIG. 15 is a diagram showing an example applied to an
integrated circuit apparatus.
[0132] FIG. 16 is a diagram showing an example applied to an
integrated circuit apparatus.
[0133] FIG. 17 is a view showing a linear element example 14.
[0134] FIG. 18 is a view showing a linear element example 15.
[0135] FIG. 19 is a view showing a linear element example 16.
[0136] FIG. 20 is a view showing a linear element example 17.
[0137] FIG. 21 is a process diagram showing an example 1.
[0138] FIG. 22 is a diagram showing a production example in the
example 1.
[0139] FIG. 23 is a perspective view showing a production example
in an example 2.
[0140] FIG. 24 is a perspective view showing a production example 3
in an example 3.
[0141] FIG. 25 is a sectional view showing an example 4.
[0142] FIG. 26 is a sectional view showing an example 5.
[0143] FIG. 27 is a sectional view showing an example 6.
[0144] FIG. 28 is a sectional view showing an example 7.
[0145] FIG. 29 is a sectional view showing an example 8.
BEST MODE FOR CARRYING OUT THE INVENTION
Example 1
[0146] An end face sensor according to an example 1 of the present
invention is shown in FIG. 21.
[0147] In an end face sensor device 2000 of the present example, a
receiving part 2005 for receiving information from a subject and
outputting the information as another information is formed on an
end face of a linear body 2001.
[0148] Description will be made below in further detail.
[0149] The linear body 2001 has a center electrode 2007 in the
center and the outer circumference of the center electrode is
coated with an insulating film 2008.
[0150] The above-mentioned linear body 2001 is prepared and an
n-type semiconductor layer 2004 is formed on an end face of the
linear body. Next, a p-type semiconductor layer 2003 is formed on
the n-type semiconductor layer 2004. As a result of this, a
receiving part (light sensor) of pn junction is formed on the end
face of the linear body 2001.
[0151] Then, by coating the p-type semiconductor layer 2003 and
forming a transparent electrode 2006, the end face sensor device
2000 is completed.
[0152] In a formation method of the n-type semiconductor layer 2004
and the p-type semiconductor layer 2003, a vapor phase formation
method or a liquid phase formation method and other methods could
be used and the formation method is not particularly limited to the
formation methods. For example, it is preferable to use a method
shown in FIG. 22. That is, the end face of the linear body 2001 of
a conductive polymer could be immersed.
[0153] Also, in formation of the transparent electrode 2006, a
vapor phase method, a liquid phase method and other methods could
be used. The transparent electrode could be formed by immersion in
melting liquid or solution of a conductive polymer in a manner
similar to the formation of the semiconductor layer.
Example 2
[0154] The present example will describe a method of producing a
multifunctional sensor device at high density without performing
micromachining.
[0155] As shown in FIG. 23, in the present example, plural linear
bodies 2001 are prepared and the plural linear bodies are bundled.
A receiving part is collectively formed on end faces of the linear
bodies in a bundled state. For example, in the bundled state, the
end faces are immersed in melting liquid or solution of a
conductive polymer. As a result of this, end face sensor devices
having uniform shapes and homogeneous characteristics on the end
faces can be mass-produced.
[0156] Also, plural bundles are prepared and receiving parts having
different functions every each bundle are formed. In FIG. 23, the
receiving parts having each of the different functions are formed
in bundles of A, B, C and D.
[0157] After the receiving parts are formed every bundle, one or
plural end face sensor devices are taken out of each of the bundles
and the end face sensor devices taken out are bundled to form a
bundle X. And, the bundle X may be held inside a micro-syringe.
[0158] As a result of this, a multifunctional end face sensor
device is formed.
[0159] By only gathering the end face sensor devices having
necessary functions from each of the bundles and bundling the end
face sensor devices in this manner, a high-density sensor array can
be completed.
[0160] For example, in the case of bundling linear bodies with a
diameter of 10 .mu.m, about 330 to 400 linear end face sensor
devices are inserted into a micro-syringe with an inside diameter
of 0.2 .mu.m. Various pieces of information can be received at high
density (about 1200 thousands of pieces of information/cm2 in the
present example). For example, in the case of a visual cell with a
diameter of 3 .mu.m, 1600 thousands of visual cells are buried in a
region of 4 mm.phi..
[0161] In addition, a multifunctional sensor device with high
density can be produced without performing micromachining.
Example 3
[0162] An example of formation on an end face while applying a bias
is shown. Description will be made based on FIG. 24.
[0163] In the present example, a linear body in which an outer
circumferential electrode 2011 is formed in the outer circumference
of an insulating film 2008 is prepared as a linear body.
[0164] In the case of forming a receiving part on an end face, a
bias voltage is applied between a center electrode 2007 and the
outer circumferential electrode 2011. And, in the case of bundling
linear bodies and forming a receiving part, outer circumferential
electrodes of each of the linear bodies are brought into
conduction.
[0165] The receiving part is formed of a conductive polymer and the
distal end of one molecule of its conductive polymer is modified by
an ion group. When a bias voltage is applied, lines of electric
force extend in a radial direction and the conductive polymer is
arranged in the radial direction and is formed. And, a molecular
length of the conductive polymer could be made shorter than or
equal to a distance between the center electrode 2007 and the outer
circumferential electrode 2008. The molecular length of the polymer
could be controlled by controlling the degree of
polymerization.
[0166] In the present example, only one molecule is present between
the electrodes. In the conductive polymer, a current flows between
molecules by hopping of electrons. On the other hand, in the
present example, a current flows without causing the hopping, so
that a current speed becomes very high. Therefore, a high-speed
operation is achieved in a semiconductor device including a
semiconductor layer formed while applying the bias as described
above.
[0167] And, the bias may be a DC, but it is preferable that the
bias should be an AC. In the case of using the AC, entanglement of
the mutual polymers is released and arrangement improves more.
Particularly, it is preferable to change a frequency with time.
And, it is preferable that a frequency of 1 Hz or higher should be
used as the AC.
[0168] When an AC bias and a DC bias are superimposed and applied,
the polymers in which the entanglement is released by the
application of the AC bias are aligned between the electrodes by
the application of the DC bias.
[0169] And, a technique for forming a film made of a conductive
polymer while applying a bias voltage between electrodes or a
technique for forming a conductive polymer film of a length of one
molecule between electrodes can also be applied to the case of
forming a film on a normal substrate face without being limited to
the case of forming a film on an end face.
[0170] Also, the outer circumferential electrode may be an
electrode circumferentially divided. Another electrode may be
disposed between the center electrode and the outer circumferential
electrode. Also, an electrode may be disposed in any position.
[0171] And, instead of applying a bias voltage between electrodes,
sound waves may be applied to solution or dissolution liquid of a
conductive polymer. That is, in a state of immersing an end face in
solution or dissolution liquid of a conductive polymer, frequency
by sound waves etc. is applied to said solution or dissolution
liquid. The entanglement of the polymer is released by the
application of the frequency. It is preferable that a frequency
should be 1 Hz to 10 Mz. Of course, while applying the sound waves,
a bias may be applied between electrodes.
Example 4
[0172] FIG. 25 is a diagram showing an example of using CdS as a
receiving part instead of a photodiode made of an n-type
semiconductor layer and a p-type semiconductor layer.
[0173] That is, the example is means for utilizing a change in
internal resistance with respect to incident light, and is an
energy control type sensor.
[0174] The present end face sensor device can be applied to, for
example, an illumination meter, an exposure meter of a camera.
Example 5
[0175] The present example is an example of a color sensor device.
The present example is shown in FIG. 26.
[0176] In the present example, a color filter 2013 of R, G, B, etc.
is further formed on a transparent electrode 2006a formed on the
p-type semiconductor layer 2003 in the example 1. The color filter
2013 can easily be formed by immersing an end face of a linear body
in dye solution.
[0177] And, in the linear body in the present example, an i layer
is formed on the outer circumference of a center electrode 2007. A
conductive polymer can also be used in the i layer. The i layer may
naturally be formed by semiconductors other than the conductive
polymer.
Example 6
[0178] The present example is a multilayer type sensor. The present
example is shown in FIG. 27.
[0179] A linear body in the present example has a center electrode
2007, an intermediate electrode 2015 and an outer circumferential
electrode 2006, and insulating films are interposed between the
respective electrodes.
[0180] Also, a p-type semiconductor layer 2016, an n-type
semiconductor layer 2017 and a p-type semiconductor layer 2018 are
sequentially formed on an end face. A multilayer type color sensor
is a sensor using the fact that the spectral sensitivity
characteristics vary depending on the depth of a junction surface
of a photodiode.
[0181] A color sensor device without using a filter can be
implemented by a configuration of the present example. The uses
include, for example, a use for identification of color, a use for
white balance of a video camera, etc. Also, a signal processing
circuit was conventionally complicated but by using a linear body,
signal processing can also be performed easily by properly
connecting electrode parts of the linear body.
Example 7
[0182] The present example is an ultrasonic sensor device. The
present example is shown in FIG. 28.
[0183] A linear body is constructed of a center electrode 2007 and
an i layer or an insulating film 2020 formed on the outer
circumference of the center electrode 2007.
[0184] A piezoelectric film 2021 is formed on an end face of the
linear body.
[0185] In the present example, it is preferable to construct the
center electrode 2007 of a conductive polymer. Also, it is
preferable to construct the i layer of a conductive polymer.
[0186] When the center electrode 2007 is constructed of metal, as
shown in FIG. 28(c), after the occurrence of sending waves, the
small peaks occur and the small peaks become a cause of a reduction
in a signal-to-noise ratio and result in an obstruction to
achievement of high resolution. On the other hand, when the center
electrode 2007 is constructed of the conductive polymer, as shown
in FIG. 28(b), the above small peaks do not occur and high
resolution is achieved.
[0187] And, the present example can also be used as a medical
ultrasonic sensor or an ultrasonic microscope.
Example 8
[0188] The present example is an example of an ion sensor or a
biosensor. The present example is shown in FIG. 29.
[0189] A linear body is constructed of a center electrode 2007 and
an insulating film 2008 formed on the outer circumference of the
center electrode.
[0190] A p-Si 2030 is formed on an electrode part of an end face of
the linear body and thereafter, the whole is coated with an
SiO.sub.2 film 2031.
[0191] An ion sensitive film 2032 is formed on an end face part of
the SiO.sub.2 film 2031.
[0192] The example is an example of forming an ion sensitive film
on the end face as the ion sensitive film 2032.
Example 9
[0193] In addition to the above, various receiving parts according
to subjects can be formed on end faces. For example, the receiving
parts include a taste sensor, a smell sensor, an enzyme sensor, a
molecular recognition sensor in which cyclodextrin is formed on an
end face. Various sensor devices can be formed when a receiving
part is formed by properly selecting a receiving film capable of
exhibiting variations in an output signal at the time of receiving
a subject.
[0194] Any of an energy conversion type sensor and an energy
control type sensor may be used as a sensor.
Linear Element Example
Test Example 1
[0195] A linear element example is shown in FIG. 1.
[0196] Numeral 6 is a linear element and in this example, a MOSFET
is shown.
[0197] In the cross section, this element has a gate electrode
region 1 in the center and in the outside of the gate electrode
region, an insulating region 2, a source region 4, a drain region 3
and a semiconductor region 5 are sequentially formed.
[0198] On the other hand, a general configuration of an extruder
for forming such a linear element is shown in FIG. 2.
[0199] An extruder 20 has raw material containers 21, 22, 23 for
holding raw materials for constructing plural regions in a melt
state or a dissolution state or a gel state. In an example shown in
FIG. 2, three raw material containers are shown, but the raw
material containers could be disposed properly according to a
configuration of the linear element produced.
[0200] A raw material inside the raw material container 23 is fed
to a die 24. Ejection holes according to a cross section of the
linear element to be produced are formed in the die 24. A linear
body ejected from the ejection holes is wound on a roller 25 or is
fed to the next process in a linear state as necessary.
[0201] A configuration as shown in FIG. 3 is adopted in the case of
producing the linear element of the structure shown in FIG. 1.
[0202] As the raw material containers, a gate material 30, an
insulating material 31, a source and drain material 32, and a
semiconductor material 34 are respectively held inside the
containers in a melt or dissolution state or a gel state. On the
other hand, in the die 24, holes are formed in communication with
the respective material containers.
[0203] That is, plural holes 30a for ejecting the gate material 30
are first formed in the center. Plural holes 31a for ejecting the
insulating material 31 are formed in the outer circumference of the
center. Then, in the outer circumference, plural holes are further
formed and only some holes 32a, 33a of the plural holes are in
communication with the source and drain material container 32. The
other holes 34a are in communication with the semiconductor
material container 34.
[0204] When the raw material in a melt state, a dissolution state
or a gel state is fed from each of the raw material containers to
the die 24 and is ejected from the die 24, the raw material is
ejected from each of the holes and hardens. By pulling the end of
the raw material, a linear element is formed in a yarn-shaped
continuous state.
[0205] The yarn-shaped linear element is wound on the roller 25 or
is fed to the next process in a yarn-shaped state as necessary.
[0206] As the gate electrode material, a conductive polymer could
be used. For example, polyacetylene, polyphenylene vinylene,
polypyrrole, etc. are used. Particularly, by using polyacetylene, a
linear element with a smaller outside diameter can be formed, so
that it is preferable.
[0207] As the semiconductor material, for example,
polyparaphenylene, polythiophene, poly(3-methylthiophene), etc. are
preferably used.
[0208] Also, as the source and drain material, a material in which
dopant is mixed into the semiconductor material could be used. In
order to form an n type, for example, alkali metals (Na, K, Ca)
etc. could be mixed. AsF.sub.5/AsF.sub.3 or ClO.sub.4.sup.- may be
used as the dopant.
[0209] As the insulating material, general resin materials could be
used. Also, SiO.sub.2 and other inorganic materials may be
used.
[0210] The materials illustrated above are similarly used in linear
elements shown in the following linear element examples.
[0211] And, in the present example, a takeout electrode is
connected to an end face of the linear body. A takeout opening may
naturally be disposed in the side of a proper position of a
longitudinal direction.
Linear Element Example 2
[0212] A linear element example 2 is shown in FIG. 4.
[0213] In the present example, the takeout electrode in the linear
element example 1 is disposed in the side of a linear element.
Takeout parts 41a, 41b shown in FIG. 4(b) can be set in a desired
position of a longitudinal direction. A spacing between the takeout
part 41a and the takeout part 41b can also be set at a desired
value.
[0214] A cross section A-A of the takeout part 41 is shown in FIG.
4(a). And, a cross section B-B of FIG. 4(b) is a structure of the
end face shown in FIG. 1.
[0215] In the present example, a source electrode 45 and a drain
electrode 46 acting as takeout electrodes in the sides of a source
4 and a drain 3 are respectively connected to the source 4 and the
drain 4. Also, a semiconductor layer 5 is insulated from the source
electrode 45 and the drain electrode 46 by an insulating layer
47.
[0216] In order to form such a configuration, a die shown in FIG. 5
is used. That is, holes 40a for insulating layer and holes 41a for
takeout electrode are disposed in the sides of source and drain
material ejection openings 33a, 34a. The holes 40a for insulating
layer are in communication with an insulating layer material
container (not shown) and the holes 41a for takeout electrode are
in communication with a takeout electrode material container (not
shown).
[0217] In this case, raw materials are first ejected from only the
numerals 30a, 31a, 32a, 33a, 34a. That is, ejection from the holes
40a, 41a is turned off. A semiconductor layer raw material moves
around portions corresponding to the holes 40a, 41a and is extruded
in the cross section shown in the linear element example 1. And, in
this case, the widths of the insulating layer 47, the drain
electrode 46 and the source electrode 45 are set small. When
ejection from the holes 40a, 41a is turned off, the material
forming the semiconductor layer moves around the portions.
[0218] Next, ejection from the holes 40a, 41a is turned on. As a
result of this, a shape of the cross section changes and the
material is extruded in the cross section shown in FIG. 5. By
properly changing the time at which the holes 40a, 41a are turned
on and the time at which the holes 40a, 41a are turned off, a
length of the cross section A-A and a length of the cross section
B-B can be adjusted to an arbitrary length.
[0219] And, it is also an example of intermittently forming shapes
of the cross section of the present example, and as A-A, other
shapes of the cross section and materials can also be used. For
example, all the A-A can also be formed in an insulating layer.
Also, in the case of other end face shapes, the shapes can be
formed by a similar technique.
[0220] And, when areas of the drain electrode 46 and the source
electrode 45 are set large and ejection from the holes 41a for
takeout electrode is turned off, the raw material of the
semiconductor layer or the raw material of the insulating layer
does not completely move around and portions corresponding to the
source electrode and the drain electrode become space. An electrode
material could be buried in its space after extrusion.
Linear Element Example 3
[0221] A linear element example is shown in FIG. 6.
[0222] The case of integrally forming the linear element by
extrusion has been shown in the linear element examples 1 and 2,
but in the present example, an example of forming a portion of a
linear element by extrusion and forming the other portion by
external processing is shown.
[0223] As a linear element, the linear element shown in the linear
element example 2 is taken as an example.
[0224] First, a gate electrode 1 and an insulating film 2 are
formed into a yarn-shaped intermediate body by extrusion (FIG.
6(a)).
[0225] Next, the outside of the insulating film 2 is coated with a
semiconductor material made in a melt or dissolution state or a gel
state and a semiconductor layer 61 is formed into a secondary
intermediate body (FIG. 6(b)). In such coating, the yarn-shaped
intermediate body could be passed into a bath of the semiconductor
material in the melt or dissolution state or the gel state. Or, a
method such as vapor deposition may be adopted.
[0226] Then, the outside of the semiconductor layer 61 is coated
with a masking material 62. The coating of the masking material 61
could also be formed by, for example, passing the secondary
intermediate body into the masking material made in a melt or
dissolution or gel state.
[0227] Then, predetermined positions (positions corresponding to
drain and source) of the masking material 62 are removed by etching
etc. and openings 63 are formed (FIG. 6(c)).
[0228] Then, while the yarn-shaped secondary intermediate body is
passed into a pressure reducing chamber, a range is controlled and
ion implantation is performed (FIG. 6(d)).
[0229] Then, a source region and a drain region are formed by
passing through a heat treatment chamber and performing
annealing.
[0230] Thus, the extrusion and the external processing could be
combined properly according to materials or arrangement of the
regions formed.
Linear Element Example 4
[0231] An example of sequentially forming each of the regions in
the linear element shown in FIG. 1 is shown in the present
example.
[0232] The procedure is shown in FIG. 7.
[0233] First, by a spinning technique, a gate electrode raw
material is ejected from holes of a die a and a gate electrode 1 is
formed (FIG. 7(b)). For the sake of convenience, this gate
electrode 1 is called an intermediate yarn-shaped body.
[0234] Next, as shown in FIG. 7(a), while the intermediate
yarn-shaped body is inserted into the center of a die b and the
intermediate yarn-shaped body is traveled, an insulating film
material is ejected from holes formed in the die b and an
insulating film 2 is formed (FIG. 7(c)). And, a heater is disposed
in the downstream side of the die b. The yarn-shaped body is heated
by this heater as necessary. By the heating, a solvent component in
the insulating film can be removed from the insulating film. The
following formation of and a semiconductor layer is similar.
[0235] Then, source and drain layers 3 and 4 are formed while the
intermediate yarn-shaped body is traveled (FIGS. 7(c) and 7(d)).
And, the source region 4 and the drain region 3 are isolated and
formed on the insulating film 2. This can be achieved by disposing
holes in only a portion of a die c.
[0236] Then, a semiconductor layer 5 is formed similarly while the
intermediate yarn-shaped body is inserted into the center in the
die and is traveled similarly.
[0237] And, as shown in FIG. 7(f), when takeout electrodes for
source and drain want to be disposed in a portion of a longitudinal
direction, supply of raw material from some holes (holes of
portions corresponding to source and drain electrodes) of plural
holes disposed in a die d could be turned off. Also, when holes for
takeout want to be disposed in all of the longitudinal direction,
the semiconductor layer could be formed using a die d2 as shown in
FIG. 7(g).
Linear Element Example 6
[0238] A linear element example 6 is shown in FIG. 8.
[0239] The present example shows an example of ejection of a
conductive polymer of the case of using the conductive polymer as a
formation material of a semiconductor device.
[0240] In the linear element example 5, the example of forming an
outer layer on a surface of an intermediate yarn-shaped body while
the intermediate yarn-shaped body is inserted into a die has been
shown. The present example shows the case that this outer layer is
a conductive polymer.
[0241] A speed difference (v.sub.1-v.sub.0) of a raw material 82 is
set at 1 m/sec or higher. The difference is preferably set at 20
m/sec or higher. The difference is more preferably 50 m/sec or
higher. The difference is further preferably 100 m/sec or higher.
An upper limit is the speed at which an intermediate yarn-shaped
body is not cut. The speed at which cutting is caused varies
depending on the discharge amount of material, the viscosity of
material, the ejection temperature, etc. and specifically,
conditions of material etc. of practice could be set and obtained
previously by experiment.
[0242] By setting a difference between an ejection speed v.sub.0
and a travel speed v.sub.1 at 1 m/sec or higher, acceleration is
applied to the ejected material and external force is exerted. A
main direction of the external force is a travel direction.
Molecular chains in the conductive polymer are generally in a twist
state as shown in FIG. 8(c) and also, the longitudinal directions
of the molecular chains are directed in random directions. Whereas
the external force is applied in the travel direction together with
ejection, the molecular chains are horizontally aligned in the
longitudinal directions while the twist is released as shown in
FIG. 8(b).
[0243] By the way, electrons (or holes) move to the molecular chain
with the closest level by hopping as shown in FIG. 8(b). Therefore,
when the molecular chains are horizontally oriented as shown in
FIG. 8(b), hopping of electrons becomes easy to occur extremely as
compared with the case of being randomly oriented as shown in FIG.
8(c).
[0244] By applying the external force to the travel direction
together with ejection, the molecular chains can be oriented as
shown in FIG. 8(b). Also, a distance between the mutual molecular
chains can be shortened.
[0245] And, the present example can naturally be applied to other
linear element examples in the case of forming a predetermined
region by the conductive polymer.
[0246] By setting the degree of longitudinal orientation of the
molecular chains at 50% or higher, electron mobility improves and a
linear element with better characteristics can be formed. A high
degree of orientation can also be controlled by controlling the
difference between the ejection speed and the travel speed. Also,
it can also be controlled by controlling a draw ratio in a
longitudinal direction.
[0247] And, the degree of orientation described herein is a value
in which a ratio of the number of molecules having an inclination
of 0 to .+-.5.degree. with respect to the longitudinal direction to
the total number of molecules is multiplied by 100.
[0248] And, a linear element with still better characteristics can
be obtained by being set at 70% or higher.
Linear Element Example 7
[0249] A linear element according to a linear element example 7 is
shown in FIG. 9.
[0250] A linear element of the present example has a hollow region
or an insulating region 70 in the center, and has a semiconductor
region 5 on its outside, and has a source region 4 and a drain
region 3 inside the semiconductor region 5 so that a portion is
outwardly exposed, and has a gate insulating film region 2 and a
gate electrode region 1 on its outside.
[0251] And, a protective layer made of insulating resin etc. may be
disposed on the outside of the gate electrode region 1. A proper
position of the protective layer may be opened to form a takeout
portion of the gate electrode.
[0252] And, also in the present example, a cross section having
another shape may be inserted between the cross sections shown in
FIG. 7 in any position of a longitudinal direction in a manner
similar to the linear element example 2.
[0253] In the case of the linear element of the present example,
preferably, after the hollow region 70 and the semiconductor region
5 are formed by extrusion, doping is performed to the source region
4 and the drain region 3 and then the insulating film region and
the gate electrode region 1 are respectively formed by coating. It
is preferable to use inorganic materials such as SiO.sub.2 as the
insulating film 2.
Linear Element Example 8
[0254] A linear element according to a linear element example 8 is
shown in FIG. 10(a).
[0255] The present example is a linear element having a pin
structure.
[0256] That is, an electrode region 102 is had in the center and on
its outside, an n layer region 101, an i layer region 100, a p
layer region 103 and an electrode region 104 are formed. And, in
the present example, a protective layer region 105 made of
transparent resin etc. is disposed on the outside of the p layer
region 103.
[0257] In this linear element, the electrode region 102, the n
layer region 101 and the i layer region 100 are integrally formed
by extrusion.
[0258] The p layer region 103 and the electrode region 104 are
formed by post processing. They are formed by, for example,
coating. A thickness of the p layer region 103 can be thinned by
forming the p layer region 103 by the post processing. As a result
of that, in the case of being used as a photovoltaic element,
incident light from the p layer 103 can efficiently be captured in
a depletion layer.
[0259] Of course, the electrode region 102, the n layer region 101,
the i layer region 100, the p layer region 103 and the electrode
region 104 may be integrally formed by extrusion.
[0260] And, in FIG. 10(a), a circumference shape of the i layer is
formed into a circle, but is preferably formed into a star shape.
As a result of this, an area of junction between the p layer 103
and the i layer 100 increases and conversion efficiency can be
enhanced.
[0261] In the example shown in FIG. 10(a), the electrode 104 is
disposed in a portion of the p layer 103, but may be formed so as
to cover all the circumference of the p layer 103.
[0262] And, in the case of an np structure, a p.sup.+ layer may be
disposed between the p layer 103 and the electrode 104. Ohmic
contact between the p layer 103 and the electrode 104 becomes easy
to make by disposing the p.sup.+ layer. Also, electrons tend to
flow to the i layer side.
[0263] An organic semiconductor material is preferably used as a
semiconductor material for forming the p layer, the n layer and the
i layer. For example, polythiophene, polypyrrole, etc. are used.
Proper doping could be performed in order to for a p type and an n
type. It may be a combination of p-type polypyrrole/n-type
polythiophene.
[0264] Also, it is preferable to use a conductive polymer as an
electrode material.
Linear Element Example 9
[0265] A linear element according to a linear element example 9 is
shown in FIG. 10(b).
[0266] In the linear element example 5, the pin structure has been
formed concentrically, but in the present example, a cross section
shape was a quadrilateral. A p layer region 83, an i layer region
80 and an n layer region 81 were laterally arranged. Also,
electrodes 82, 83 were respectively formed on the sides.
[0267] In the present example, the cross section shown in FIG.
10(b) is formed continuously in a longitudinal direction.
[0268] The linear element of this structure could be integrally
formed by extrusion processing.
Linear Element Example 10
[0269] In the present example, an electrode region is had in the
center and on its outer circumference, one region made of a
material in which a p-type material and an n-type material are
mixed is formed. Further, an electrode region is formed on its
outer circumference.
[0270] That is, in the above example, a diode element of a
two-layer structure in which the p layer and the n layer are joined
(or a three-layer structure through the i layer) has been shown.
However, the present example is an example of a one-layer structure
made of a material in which a p-type material and an n-type
material are mixed.
[0271] A p-type/n-type mixed material is obtained by mixing an
electron donor conductive polymer and an electron acceptor
conductive polymer.
[0272] When an element region is formed by the p-type/n-type mixed
material, a simple structure is obtained and it is preferable.
Linear Element Example 11
[0273] In the present example, the linear element shown in the
linear element examples was further drawn in a longitudinal
direction. In a drawing method, for example, a technique for
drawing a copper wire or a copper tube could be used.
[0274] A diameter can be further thinned by drawing. Particularly,
in the case of using a conductive polymer, the molecular chains can
be paralleled in the longitudinal directions as described above. As
well, the spacing between the mutual molecular chains paralleled
can be decreased. Therefore, hopping of electrons is efficiently
performed. As a result of that, a linear element with better
characteristics can be obtained.
[0275] It is preferable that a reduction ratio by drawing be 10% or
more. It is more preferable that the ratio be 10 to 99%.
[0276] And, the reduction ratio is 100 multiplied by (area before
drawing minus area after drawing) divided by (area before
drawing).
[0277] The drawing may be repeated plural times. In the case of a
material in which a modulus of elasticity is not large, the drawing
could be repeated.
[0278] It is preferable that an outside diameter of a linear
element after drawing be 1 mm or smaller. It is more preferable
that the diameter be 10 .mu.m or smaller. It is still more
preferable that the diameter be 1 .mu.m or smaller. It is most
preferable that the diameter be 0.1 .mu.m or smaller.
Linear Element Example 12
[0279] A linear element example 12 is shown in FIG. 11.
[0280] In the present example, a raw material is linearly formed in
a quadrilateral shape of a cross section by extrusion and an
intermediate linear extruded body 11 is produced (FIG. 11(a)). The
raw material may be extruded in other shapes of the cross
section.
[0281] Next, the intermediate linear extruded body 111 is expanded
in a lengthwise direction or a lateral direction in the cross
section and an expanded body 112 is formed (FIG. 11(b)). The
example of being expanded in the lateral direction in the drawing
is shown in FIG. 11.
[0282] Then, the expanded body 112 is cut into a proper number
parallel in a longitudinal direction and plural unit expanded
bodies 113a, 113b, 113c, 1113d are produced. And, it may proceed to
the next process without performing this cutting.
[0283] Then, the unit expanded body is processed in a proper shape.
In the example shown in the drawing, it is processed in a ring
shape (FIG. 11(d)), a spiral shape (FIG. 11(e)) and a double ring
shape (FIG. 11(f)).
[0284] Then, a proper material is buried in hollow parts 114a,
114b, 114c, 114d. When the unit expanded body is a semiconductor
material, an electrode material is buried. Of course, it may be
buried concurrently with processing into the ring shape rather than
buried after processing into the ring shape etc.
[0285] Also, in the case of the double structure as shown in FIG.
11(f), the unit expanded body 114c may use a material different
from that of the unit expanded body 114d.
[0286] Also, after extrusion (FIG. 11(a)), expansion (FIG. 11(b))
or cutting (FIG. 11(d)), the surface may be coated with another
material. The coating could be performed by, for example, dipping,
vapor deposition, plating and other methods. A coating material can
be selected properly according to a function of an element
produced. The coating material may be any of semiconductor
materials, magnetic materials, conductive materials and insulating
materials. The coating material may be any of inorganic materials
and organic materials.
[0287] In the case of using a conductive polymer as an expanded
body material in the present example, longitudinal directions of
molecular chains are oriented so as to be positioned in a right and
left direction on the drawing, which is an expansion direction. As
a result of that, after being processed in the ring shape, the
longitudinal directions of the molecular chains are oriented in a
circumferential direction as shown in FIG. 11(g). Therefore,
electrons tend to hop in a radial direction.
[0288] Also, when an opening 115 is disposed in the case of being
processed in the ring shape, this opening can be used as, for
example, a takeout opening of an electrode etc. It can also be used
as a connection part between mutual linear elements in the case of
weaving the linear elements mutually and forming an integrated
device. Also, it can be used as a junction surface to another
region.
[0289] And, after processing of the ring shape etc., a linear body
having this ring shape etc. can be used as an intermediate body for
completing a linear element having a desired cross-sectional
region.
[0290] And, as shown in FIG. 11(h), a constricted part (a part
different from other parts in a cross-sectional outside diameter
shape) 117 may be disposed periodically or aperiodically in a
proper position of a longitudinal direction of a linear body. In
the case of weaving another linear element perpendicularly in the
longitudinal direction, this constricted part can be utilized as a
mark of positioning. Formation of such a constricted part is not
limited to the present example, and can also be applied to other
linear elements.
[0291] And, it is preferable that the degree of orientation of the
molecular chains in the circumferential direction be set at 50% or
higher. It is more preferable that the degree be set at 70% or
higher. As a result of this, a linear element with good
characteristics can be obtained.
Linear Element Example 13
[0292] The producing method example of an element in which a
cross-sectional shape is intermittently formed has been described
in the above linear element examples, but in the present example,
another producing example in the case of extrusion formation is
shown in FIG. 12.
[0293] And, only a portion of a region in which a circuit element
is formed is shown in FIG. 12.
[0294] In FIG. 12(a), a semiconductor material is ejected at only
timing shown by a in the case of ejecting the semiconductor
material. A conductor and a semiconductor may be simultaneously
formed by continuously ejecting a conductor material and
intermittently ejecting the semiconductor material. Also, a
semiconductor material may be intermittently ejected on the
circumference of a conductor while a conductor part is first formed
and the conductor is traveled.
[0295] In an example shown in FIG. 12(b), a linear semiconductor or
insulator is first formed and then a portion having a different
cross-sectional region in a longitudinal direction is disposed by
coating a conductive body intermittently in the longitudinal
direction through vapor deposition etc.
[0296] In an example shown in FIG. 12(c), first, an organic
material is linearly formed. Next, light is intermittently applied
in a longitudinal direction and photopolymerization is caused in
the applied portion.
[0297] As a result of this, a portion having a different
cross-sectional region in the longitudinal direction can be
formed.
[0298] In FIG. 12(d), .alpha. (is a conductive polymer of a light
transmission type and .beta. is an intermediate linear body in
which two layers made of a conductive polymer of a photo-curing
type are integrally formed by extrusion. When light is
intermittently applied while traveling this intermediate linear
body, an a portion causes photo-curing. As a result of this, a
portion having a different cross-sectional region in a longitudinal
direction can be formed.
[0299] FIG. 12(e) is an example of using ion application. A linear
body is traveled and an application device is disposed on the way.
Ions are intermittently applied from ion application. The ions may
be applied from all the directions or may be applied from only a
predetermined direction. The direction could be decided properly
according to a cross-sectional region to be formed. Also, a range
of the ion could be decided properly.
[0300] A heating device is disposed in the downstream side of an
ion application device, and the linear body after the ion
application is heated. A portion to which the ions are applied is
changed into the different composition by heating.
[0301] In the case of being applied from all the directions, all
the surfaces are changed into the different composition. Also, in
the case of applying the ions from only a predetermined direction,
only the portion is changed into the different composition.
[0302] And, with respect to the portion to which the ions are
applied, the example in which an intermediate linear body of a
subject of the ion application has a one-layer structure has been
shown in the example shown in FIG. 12(f), but even for a two-layer
structure, the ions can also be implanted in only the inside by
controlling a range at the time of the ion application. A different
composition can be formed in the inside applied by heat
treatment.
[0303] When a silicon linear body is used as an intermediate linear
body and O ions are implanted, an SiO.sub.2 region can be formed.
In the case of controlling a range, the so-called BOX (buried oxide
film) can be formed. And, the BOX has been described as the case of
intermittently forming another cross-sectional region, but the BOX
may be formed in the whole area of a longitudinal direction.
Application Example 1
[0304] The present example is an example of forming an integrated
circuit by weaving of plural linear elements.
[0305] An integrated circuit example is shown in FIG. 13.
[0306] An integrated circuit shown in FIG. 13 is a DRAM type
semiconductor memory. The DRAM memory is made of memory cells
arranged vertically and horizontally and its circuit is shown in
FIG. 13(a).
[0307] One cell is made of a MOSFET 209a1 and a capacitor 207.
Conductors of bit lines S1, S2, . . . and word lines G1, G2, . . .
are connected to each of the cells.
[0308] As shown in FIG. 13(b), this cell is constructed of a MOSFET
linear element 209a1 and a capacitor linear element 207. The MOSFET
linear elements are prepared by the number of columns.
[0309] In this MOSFET 209a1, a gate electrode 201, an insulating
layer 202, source and drain 204 and 205, and a semiconductor layer
203 are sequentially formed from the center toward the outer
circumference.
[0310] Also, an element isolation region 210 is formed in a
longitudinal direction. However, the gate electrode 201 extends
through one linear body. That is, using one gate electrode as a
common word line, plural MOSFETs 209a1, 209b1, . . . are formed in
one linear body in the longitudinal direction.
[0311] Also, MOSFETs 209a2, a3, . . . of FIG. 13(a) are similarly
constructed of linear elements.
[0312] And, it is preferable to construct this MOSFET linear
element of a polymer material.
[0313] Also, a takeout part of the source region 204 is protruded
radially as shown in FIG. 13(c). This is because contact with the
bit line S1 is facilitated. Also, the drain region 205 is protruded
radially as shown in FIG. 13(d). The protrusion positions of the
drain and the source are shifted in the longitudinal direction.
[0314] On the other hand, in the capacitor linear element 207, an
electrode, an insulating layer and an electrode are sequentially
formed from the center toward the outside.
[0315] S1 is the bit line and has a linear shape. It is preferable
to use a conductive polymer as a material. This bit line S1206 is
wound on the source part 204 to make contact with the source 204.
This bit line S1 is wound on source regions of linear MOSFET
elements respectively constructing the MOSFETs 209a2, a3, . . .
.
[0316] Also, the drain region 205 is connected to the capacitor 207
by a linear conductive polymer 210.
[0317] And, in the example shown in FIG. 13, the capacitor has been
formed by another linear element, but may be disposed in a proper
position of a linear body in which the MOSFET is formed. As a
result of that, the number of linear elements used decreases and
the degree of integration can be increased more. Also, the
capacitor is not connected by the conductive polymer 210 and may be
directly joined to the MOSFET linear element using a conductive
adhesive etc.
[0318] As described above, after weaving the linear elements
vertically and horizontally, all the linear elements could be
coated with an insulating material to prevent leakage of a
conductive part.
[0319] And, a diode may be used instead of the capacitor.
Application Example 2
[0320] The present example shows an integrated circuit formed by
bundling plural linear elements.
[0321] An example of using a MOSFET linear element is also shown in
the present example. Of course, other linear elements may be
used.
[0322] Plural MOSFET linear elements are prepared.
[0323] When signal input elements are formed on end faces of each
of the linear elements and are bundled, various information can be
sensed. For example, when a light sensor, an ion sensor, a pressure
sensor, etc. are disposed, information corresponding to five senses
of human beings can be sensed.
[0324] For example, when a sensor corresponding to signals of 100
kinds attempts to be formed of a conventional substrate type
semiconductor integrated circuit, the sensor must be produced by
repeating photolithography processes 100 times. However, in the
case of using an end face of the linear element, the sensor
corresponding to the signals of 100 kinds can be formed simply
without repeating such photolithography processes.
[0325] Also, a sensor with high density can be obtained.
Application Example 3
[0326] It can be applied as, for example, a photovoltaic integrated
device as described below.
[0327] A photovoltaic device can be formed by bundling, twisting or
weaving linear elements having pin structures. And, it is
preferable that a pin layer be constructed of a conductive polymer.
Also, it is preferable to add a sensitizer.
[0328] For example, fabric is formed by weaving linear elements and
clothes can also be formed by this fabric. In this case, all the
linear elements form a light receiving region and incident light
can be received from an angle of 360.degree.. As well, light can be
received in a three-dimensional manner and a photovoltaic element
with high light receiving efficiency can be formed.
[0329] Also, light capture efficiency is very high. That is, the
light, which is not inputted to the linear element and is
reflected, is also captured in fabric and repeats reflection and
thereby is inputted to the other linear elements. And, it is
preferable to form the linear elements by extrusion processing.
[0330] Electrodes from each of the elements could be connected to a
collecting electrode to dispose a connection terminal in this
collecting electrode.
[0331] Also, when a storage battery is incorporated into back
fabric of clothes, electricity can be utilized in a dark place.
[0332] Also, when a heat generation body is disposed in clothes,
the clothes having a heating effect can be formed.
[0333] Further, when linear heat generation body are coated with an
insulating layer and are woven in fabric shape together with linear
photovoltaic elements, clothes having a heating effect can be
produced.
[0334] Also, linear elements can be transplanted to a base material
of a desired shape to form a solar battery. That is, a solar
battery with extremely high light capture efficiency can be formed
by transplanting the linear elements in a fuzzy state or a
hedgehog-like state.
[0335] Reduction in the total weight is desired in a communication
satellite. Since the solar battery is very lightweight, the solar
battery is useful as a power generator in the communication
satellite.
[0336] Since the solar battery has bendability, the solar battery
can be formed along any shape and can be attached to an outer
surface of a main body of the communication satellite using an
adhesive.
[0337] And, when linear photovoltaic elements are easily
transplanted to the surface of a base material adapted for a shape
of a person's head, an artificial wig having a power generation
function can be formed.
[0338] Also, in the case of using very thin linear elements, the
linear elements have a suede effect and can be used as a
leather-like surface. A bag can also be formed by such linear
elements. That is, a bag having a power generation function can be
formed.
Application Example 4
[0339] Another application example is shown in FIG. 14.
[0340] In the present example, a linear source electrode and a
linear drain electrode are brought into contact with a proper
position of a linear body in which a gate electrode is coated with
an insulating layer. The range of a contact portion of the source
electrode to a contact portion of the drain electrode is coated
with an organic semiconductor material.
[0341] Also, as shown in FIG. 15, a linear source electrode or a
linear drain electrode may be once or plural times wound on a
linear body in which a gate electrode is coated with an insulating
layer. Sufficient contact can be obtained by winding. And, when a
constricted portion is disposed in the linear body, it is
convenient for positioning in the case of winding etc.
[0342] As shown in FIG. 16, a source electrode and a drain
electrode can also be brought into contact with only a proper
linear body (point A). Also, connection between the source
electrode and the drain electrode can further be made by another
conductor (point B).
[0343] In FIG. 16, an example of one column as a column has been
shown, but can also be arranged in plural columns. In this case,
connection could be made in a three-dimensional manner. Since the
linear body, the source electrode and the drain electrode have
bendability, they can be bent in a desired direction in a desired
position.
[0344] When mutual connections are made in a desired position in a
three-dimensional manner using, for example, MOSFET linear elements
as a linear body, a desired logic circuit can be assembled. In the
case of using a conventional semiconductor substrate as a basic
component, a long current passage is required, but use of linear
elements enables the current passage to be shortened extremely and
a very high-speed logic circuit can be constructed.
Linear Element Example 14
[0345] A linear element example 14 is shown in FIG. 17.
[0346] As shown in FIG. 17(a), in a linear element of the present
example, a center electrode 3000 is had in the center, and an
insulating layer 3004 is formed on the outer circumference of said
center electrode 3000, and a semiconductor layer 3003 in which
pairs of source regions 3001a, 3001b, 3001c, 3001d and drain
regions 3002a, 3002b, 3002c, 3002d are formed by plural pairs
3005a, 3005b, 3005c, 3005d is formed on the outer circumference of
said insulating layer 3004.
[0347] An equivalent circuit of the linear element shown in FIG.
17(a) is shown in FIG. 17(b).
[0348] In the present example, the center electrode 3000 acts as a
gate electrode. Also, the center electrode 3000 acts as a common
electrode. That is, the center electrode acts as the common
electrode of four source and drain pairs 3005a, 3005b, 3005c,
3005d. Four pairs of MOSFETs can be produced in one linear body by
having only one gate electrode. Of course, the source and drain
pairs are not limited to four pairs, and two or more pairs may be
formed.
[0349] FIG. 17(c) is an equivalent circuit of the case of
connecting sources by a common line. The sources could be connected
in an end face of the top or the bottom of a linear body. Also, an
exposure part may be formed in the middle portion of a longitudinal
direction of the linear body to make connection from the exposure
part.
[0350] FIG. 17(d) is an equivalent circuit of the case of
connecting drains by a common line. Connection between the drains
could be made in a manner similar to the case of the sources.
[0351] The element of the present example can be produced by, for
example, the injection molding described above.
Linear Element Example 15
[0352] A linear element example 15 is shown in FIG. 18.
[0353] As shown in FIG. 18(a), a linear element of the present
example is constructed so that an electrode 3100 is had in the
center and an insulating layer 3103a is formed on the outer
circumference of said center electrode 3100 and plural
semiconductor layers 3104b, 3104c and insulating layers 3103b,
3103c are alternately formed on the outer circumference of said
insulating layer 3103a and one or more pairs of a source region
3102b and a drain region 3101b are formed in each of the
semiconductor layers of the outside from the second layer and also
a drain region 310a or a drain electrode in the semiconductor layer
of the inside is located between said source region 3102b and the
drain region 3101b.
[0354] An equivalent circuit of the element of FIG. 17(a) is shown
in FIG. 18(b).
[0355] In the present example, an output of the drain in the inside
circumference is used as an input of the semiconductor layer in the
outside circumference. Therefore, parallel processing of many
signals can be performed by one gate (center electrode 3100).
[0356] FIG. 18(c) is an equivalent circuit of the case of forming
plural MOSFETs in one semiconductor layer. Thus, according to the
present example, an integrated circuit with a very high degree of
integration can be formed.
Linear Element Example 16
[0357] A linear element example 16 is shown in FIG. 19.
[0358] The present example has a source region 3201 in the center
of a semiconductor layer 3200, and has plural gate electrodes
3202a, 3202b, 3202c, 3202d, 3202e, 3202f intermittently arranged in
a circumferential direction on the circumference of said source
region 3201 through a semiconductor layer, and has a drain region
3203 on the outer circumference of said semiconductor layer
3200.
[0359] An example of producing the element of the present example
is shown in (1) to (5) of FIG. 19.
[0360] First, a wire 3201 for source is prepared. For example,
silver, gold and other conductive materials could be used as the
wire for source.
[0361] Next, a surface of the wire 3201 for source is coated with a
semiconductor layer by a dipping method etc. It is preferable to
use the organic semiconductor described above as a
semiconductor.
[0362] On the other hand, plural gate electrodes are prepared and
the gate electrodes are placed on a flat surface at a desired
spacing.
[0363] After being coated with the semiconductor layer, it is
rolled on the gate electrodes at a point in time when the
semiconductor layer is in a semidry state as shown in (3). As a
result of this, an intermediate body in which the gate electrodes
are circumferentially placed on a surface of the semiconductor
layer at the desired spacing is formed.
[0364] Then, a semiconductor liquid layer is formed on a surface of
the intermediate body in which the gate electrodes are formed by a
dipping method etc.
[0365] Then, a drain electrode made of gold etc. is formed on the
outer circumference of the semiconductor layer by a vapor
deposition method etc.
Linear Element Example 17
[0366] Heat treatment is performed with respect to a linear element
for various purposes. Also, dopant is injected into the linear
element.
[0367] FIG. 20 is a diagram showing an apparatus capable of
performing heat treatment at different temperatures or injecting
different dopants.
[0368] The present apparatus is constructed so that plural pipes
2200a, 2200b are placed in a multistage state and a linear element
2202 is fed through the pipes 2200a, 2200b placed in the multistage
state.
[0369] For example, when an oxide film wants to be formed in an A
portion of the linear element 2202, feeding of the linear element
2202 could be stopped to introduce warmed oxidative gas into the
pipe 2200a. Or, when gas including dopant is introduced, the dopant
can be injected into the A portion. Therefore, a linear element
having a different cross-sectional region in a longitudinal
direction can be produced.
[0370] Also, when heat treatment of the whole linear element 2202
wants to be performed, warmed inert gas could be introduced into
the pipe 2200a with feeding of the linear element continued. For
example, it can be used in heat treatment for diffusing dopant
after the dopant is injected.
[0371] Also, the same gas or different gases may be supplied to the
pipe 2200a and the pipe 2200b. When the same gas is supplied, gas
temperature may be set at different temperatures or may be set at
the same temperature.
[0372] And, it is preferably constructed so that a gap between the
pipe 2200a and the pipe 2200b is held in a sealed state and
emission is performed from sealed space.
[0373] As a result of this, leak gas can be prevented from leaking
to the outside.
[0374] As the gas, for example, diborane gas may be supplied. In
this case, the linear element passes through a liquid phase, so
that, for example, doping can be performed. That is, the doping can
be performed even in the case of the simple apparatus as shown in
FIG. 20.
[0375] And, in the heat treatment with respect to the linear
element, heat treatment intended to obtain the optimum junction or
crystallinity, heat treatment intended for diffusion of dopant and
other heat treatment are illustrated.
INDUSTRIAL APPLICABILITY
Effect of Linear Element
[0376] A linear element which has flexibility or bendability
without being limited to its shape and can generate various
apparatus with any shapes, and a method of producing the linear
element can be provided.
[0377] An end face sensor device which has flexibility or
bendability without being limited to its shape and can generate
various apparatus with any shapes, and a method of producing the
end face sensor device can be provided.
* * * * *