U.S. patent application number 11/804608 was filed with the patent office on 2008-11-20 for circuit and method for a three dimensional non-volatile memory.
Invention is credited to Chih Chieh Yeh.
Application Number | 20080285350 11/804608 |
Document ID | / |
Family ID | 40027308 |
Filed Date | 2008-11-20 |
United States Patent
Application |
20080285350 |
Kind Code |
A1 |
Yeh; Chih Chieh |
November 20, 2008 |
Circuit and method for a three dimensional non-volatile memory
Abstract
An architecture, circuit and method for providing a very dense,
producible, non volatile FLASH memory with SONOS cells. Preferred
SONOS memory cells are formed using a uniformly doped channel
region. A FinFET embodiment and a planar FD-SOI embodiment cell are
disclosed. Because the novel SONOS cells do not rely on diffused
regions, the cells may be formed into a three dimensional array of
cells without diffusion problems from subsequent thermal processing
steps. FLASH memory arrays are formed by forming layers of NAND
Flash cells in the local interconnect layers of an integrated
circuit, with the metal layers forming the global bit line
conductors. The three dimensional non volatile arrays formed of the
SONOS cells rely on conventional semiconductor processing and so
are easily integrated with other circuitry to form an ASIC or SoC
device. P-channel and n-channel devices may be used to form the
SONOS non-volatile cells.
Inventors: |
Yeh; Chih Chieh; (Taipei
City, TW) |
Correspondence
Address: |
SLATER & MATSIL, L.L.P.
17950 PRESTON ROAD, SUITE 1000
DALLAS
TX
75252
US
|
Family ID: |
40027308 |
Appl. No.: |
11/804608 |
Filed: |
May 18, 2007 |
Current U.S.
Class: |
365/185.17 ;
365/185.18 |
Current CPC
Class: |
G11C 16/0466 20130101;
H01L 29/792 20130101; H01L 27/115 20130101; H01L 29/4234 20130101;
H01L 27/0688 20130101; H01L 27/11568 20130101; H01L 27/11578
20130101; H01L 29/66833 20130101 |
Class at
Publication: |
365/185.17 ;
365/185.18 |
International
Class: |
G11C 11/34 20060101
G11C011/34 |
Claims
1. A nonvolatile memory cell, comprising: a uniformly doped silicon
region having a source region, a channel region, and a drain
region; a charge trapping storage dielectric overlying the channel
region; and a conductive gate region overlying the charge trapping
dielectric region.
2. The non-volatile memory cell of claim 1, wherein a read of the
memory cell determines whether current flows in response to a
predetermined potential on the gate region.
3. The non-volatile memory cell of claim 1, wherein the uniformly
doped silicon region is an epitaxial silicon region.
4. The non-volatile memory cell of claim 1, wherein the source
region, the channel region, and the drain region having a same type
dopant.
5. The non-volatile memory cell of claim 1, and further comprising:
providing the charge trapping storage dielectric comprising an
oxide, a nitride overlying the oxide, and an oxide overlying the
nitride.
6. The non-volatile memory cell of claim 1, wherein the charge
trapping dielectric overlies the uniformly doped silicon region on
three sides, and the conductive gate region overlies the charge
trapping dielectric, so that non-volatile memory cell forms a
FinFET device.
7. The non-volatile memory cell of claim 2, wherein the conductive
gate region, charge trapping storage dielectric, and uniformly
doped silicon region form a fully depleted silicon over insulator
(FD-SOI) device.
8. A plurality of non volatile memory cells, comprising: a
uniformly doped silicon region; a plurality of cell regions formed
apart one from another in the uniformly doped silicon region, each
cell region comprising a source region, a drain region, and a
channel region between the source and drain regions; charge
trapping storage regions overlying each of the channel regions; and
a plurality of gate electrodes overlying each of the cell regions,
each gate electrode overlying a charge trapping storage region.
9. The plurality of non-volatile memory cells of claim 8, wherein
the cells are coupled together to form a NAND memory array.
10. The plurality of non-volatile memory cells of claim 8, and
further comprising a source select transistor coupled between a
global bit line and the uniformly doped silicon region for
inputting and outputting data to the non-volatile memory cells.
11. The plurality of non-volatile memory cells of claim 8, and
further comprising a ground select transistor coupled between a
voltage source and the uniformly doped silicon region for
selectively providing a path from the array of non-volatile memory
cells to the voltage source.
12. The plurality of non-volatile memory cells of claim 8, wherein
the uniformly doped silicon region further comprises an epitaxial
silicon region.
13. A three dimensional array of non-volatile memory storage cells,
comprising: a substrate; one or more memory layers overlying the
substrate, each comprising: a uniformly doped silicon region having
a plurality of spaced apart memory cell regions formed within it,
each memory cell region comprising a source region, a drain region
and a channel region between the source and drain regions; charge
trapping storage dielectrics formed over each of the memory cell
regions and overlying the channel region; conductive gate
electrodes formed overlying the charge trapping storage dielectric
for each of the memory cell regions; a dielectric layer overlying
the gate electrodes and separating the respective memory layers in
a vertical direction.
14. The array of memory storage cells in claim 13, and further
comprising: at least one MOS device formed in the silicon
substrate; and a contact extending from the first memory layer
through the insulating layer.
15. The array of storage cells in claim 13, and further comprising:
at least one via formed in an interlevel dielectric layer between
two of the memory layers.
16. The array of storage cells in claim 13, wherein each of the
silicon regions forms a local bit line and the memory cell regions
are coupled in series to form a NAND memory array within the memory
layer.
17. The array of storage cells in claim 13, wherein each of the
gate electrodes is coupled to a word line and a memory cell is
located at the intersections of the word lines and the local bit
lines.
18. The array of storage cells in claim 13, wherein each of the
storage cells is a silicon oxide nitride oxide silicon (SONOS)
cell.
19. The array of storage cells in claim 18, wherein each of the
storage cells is a fully depleted silicon over insulator (FD-SOI)
device.
20. The array of storage cells in claim 18, wherein each of the
storage cells is a FinFET device.
Description
TECHNICAL FIELD
[0001] The present invention relates to a circuit and method for
providing a three dimensional non-volatile memory cell using charge
trapping storage in a silicon oxide nitride-oxide ONO silicon
(SONOS) flash memory device. The cell incorporates a uniform doping
for the source, drain and channel regions. In one preferred
embodiment a FinFET form is used another preferred embodiment a
fully-depleted silicon on insulator (FD-SOI) form is used. The cell
utilizes a charge trapping transistor using ONO or other similar
dielectrics. A plurality of these non-volatile memory cells may be
arranged in three dimensions using vertical layers. Processing
methods are presented for fabricating integrated circuits
incorporating memory portions using the SONOS cells. These cells
are particularly useful to increase the density of a Flash NAND
memory array because the uniform doping in the source, drain and
channel circumvents thermal source and drain out diffusion problems
that occurred in prior art attempts to form three dimensional
arrays where SONOS cells are used.
BACKGROUND
[0002] Non-volatile memory cells are used to store data in
integrated circuits. As portable and battery powered devices become
increasingly important in the consumer products industry, the need
for permanent data storage when batteries lose power or between
uses of a battery powered product, increases. Example consumer
products that require non-volatile storage are battery operated
devices such as cell phones, portable computers such as laptops,
notebook and PDAs, wireless email terminals, MP3 audio and video
players, portable wireless web browsers and the like, and these
integrated circuits increasingly include on-board data storage. As
is known in the art.
[0003] A commercially important type of non-volatile storage is the
NAND flash array. These arrays offer good storage density and
permanent data storage, however the erase and program cycles are
performed to address several cells at once. Another type of
non-volatile storage is NOR Flash, which is more suitable when
random access to individual cells is required, NOR flash cells are
arranged with individual bit and word lines accessing individual
cells, however the density of these arrays is lower and so the
amount of data storage/unit area is also much lower. Both types of
non-volatile memory are becoming increasingly prevalent in various
applications for storage of data, voice, images, audio and
video.
[0004] FIG. 1 depicts a type of non-volatile charge trapping
storage cell. In FIG. 1, a semiconductor substrate region 11 is
shown in a cross sectional view. Source and drain regions 15 and 25
are formed using conventional semiconductor process doping steps to
dope the substrate followed by an anneal step to cause thermal
diffusion to form the source and drain diffusions to the desired
depth. A dielectric stack, typically oxide nitride oxide or
so-called "ONO", is formed from deposition and patterning steps as
are known in the art. Oxide 23, nitride 13, and oxide 19 are
deposited or grown over the substrate. Polysilicon gate 17 is
formed to complete the storage cell, this gate is the control gate
and will be used to receive the word line or row line voltage. This
planar non-volatile cell, a single gate non-volatile device, can be
programmed by adjusting the threshold voltage so that the cell is
either conducting, or non-conducting, in the presence of a read
voltage on the control gate. By assigning a logical value of 1 or 0
to the state of conducting, or non-conducting, the cell may be
programmed to store a data value. The program state involves
trapping charge at the nitride, which acts to make the cell
conductive or non conductive in subsequent read cycles. This
programming step is reversible so that the storage cell may be
programmed for many thousands of cycles.
[0005] As one approach to forming useful densities of the
non-volatile cell of FIG. 1, a stacked arrangement using silicon on
insulator or SOI layers as the vertically stacked "substrate
regions" could be used. FIG. 1 depicts the effect of repeated
thermal processes on the planar silicon ONO silicon, or SONOS,
non-volatile cell in the dashed area. For example, in a typical
stacking arrangement, the first layer of cells could be formed on
the silicon substrate, with subsequent layers of cells being formed
on SOI layers built up vertically. To manufacture this structure,
each additional source drain region annealing step performed at
each layer would subject the lower, already completed cells, to
additional thermal processes. In FIG. 1, the undesired additional
thermal diffusion of the source and drain regions is shown, if this
undesired diffusion continues over many process steps the two
regions may even electrically contact and close the channel region
between them, causing device failure. Even if such a failure does
not occur, the source and drain diffusion changes the channel
length, and affects the operation of the device after it is
completed, resulting in unpredictable threshold voltages (Vt) and
other deleterious effects.
[0006] A need thus exists for improved SONOS non-volatile storage
cells, methods for manufacturing the cells, and circuitry and
methods that substantially maintain the advantages of the SONOS
non-volatile cells and the layout efficiency and compactness of the
prior art cell approaches, while offering an efficient solution to
the thermal diffusion problems associated with the known three
dimensional cell arrays of the prior art.
SUMMARY OF THE INVENTION
[0007] These and other problems are generally solved or
circumvented, and technical advantages are generally achieved, by
embodiments of the present invention, which provide circuits and
methods of manufacture for forming an improved SONOS non-volatile
storage cell, three dimensional circuit arrays, and semiconductor
processes for use in an integrated circuit. The improved circuit
and methods solve the thermal diffusion problems associated with
repeated thermal cycles used to form three dimensional arrays of
SONOS storage cells.
[0008] In one preferred embodiment, a SONOS storage cell is
provided as a triple gate or FinFET cell formed of intersection
polysilicon regions, the source drain and channel are formed in a
first doped polysilicon region, and a FinFET gate structure is
formed by depositing and patterning an ONO dielectric and a triple
gate over the source drain poly using, for example, a second
perpendicular or similarly oriented polysilicon gate structure.
Because the doped polysilicon of the source drain region is
uniformly doped when formed, and there are not separate source
drain diffusion regions, no thermal diffusion occurs during
subsequent processing and the thermal budget for the semiconductor
processes can be relaxed as compared to three dimensional SONOS
cell structures of the prior art.
[0009] In another preferred embodiment, a SONOS cell is provided as
a patterned FD-SOI structure that is uniformly doped to provide the
source drain and channel region, and a polysilicon gate structure
is formed overlying an ONO dielectric layer. The SONOS storage cell
is provided as a uniformly doped region in an SOI layer of silicon
over the interlevel dielectric layers, because there are not
separate source drain diffusion regions, the cell is not adversely
affected by undesirable diffusion as subsequent layers are
processed.
[0010] Three dimensional memory arrays are provided in additional
preferred embodiments of the invention. Layers of SONOS cells are
provide with word lines, and bit line are coupled vertically
through the layers using select circuits. As is known in the
non-volatile storage cell art, cycles of programming, erasure, and
read are used to store data into the cells and to retrieve data
from the cells. The three dimensional array may include many layers
of cells to provide a very dense and compact non-volatile memory
array.
[0011] In another preferred embodiment, the non-volatile storage
array may be provided as a core of memory cells that is integrated
with logic or processor circuitry to provide an application
specific integrated circuit (ASIC) or system on a chip (SOC) that
is highly integrated. These highly integrated circuits may reduce
the component count required to implement important electronic
systems functions such as cell phone circuitry, PDAs, laptop or
portable computers, music and video players, and the like.
[0012] In another preferred embodiment a discrete memory integrated
circuit is provided using the three dimensional arrays of SONOS
cells.
[0013] Additional embodiments of NAND Flash circuitry using the
SONOS cells in a three dimensional array are provided. Control
circuitry and vertical and horizontal conductors are formed to
implement a Flash memory array using the SONOS cells in a vertical
arrangement.
[0014] Preferred methods of manufacturing the cells are disclosed.
In a preferred method using the FinFET SONOS cells, polysilicon
regions of source, drain, and channel material are formed in a
first direction, and uniformly doped. Dielectric layers forming an
ONO dielectric are arranged over the polysilicon and forming the
triple gate dielectric by lying over the top and the sides of the
polysilicon channel region. Polysilicon gate regions are formed
overlying the dielectric and laying over the top and adjacent the
sides of the channel region to form the triple gate structure. In
an alternate preferred method, regions of uniformly doped SOI
material are formed and isolated electrically using shallow trench
isolation techniques. ONO dielectric regions are formed above the
SOI to define channel regions for each SONOS cell, and a gate
polysilicon is formed over the dielectric, subsequent layers of SOI
material are formed vertically using semiconductor processing
steps. Multiple layers may be added to vertically increase the
number of cells without requiring additional planar area on the
integrated circuit. Highly integrated non-volatile arrays are
therefore practical using the storage cells of the invention.
[0015] The foregoing has outlined rather broadly the features and
technical advantages of the present invention in order that the
detailed description of the invention that follows may be better
understood. Additional features and advantages of the invention
will be described hereinafter, which form the subject of the claims
of the invention. It should be appreciated by those skilled in the
art that the conception and specific embodiment disclosed may be
readily utilized as a basis for modifying or designing other
structures or processes for carrying out the same purposes of the
present invention. It should also be realized by those skilled in
the art that such equivalent constructions do not depart from the
spirit and scope of the invention as set forth in the appended
claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] For a more complete understanding of the present invention,
and the advantages thereof, reference is now made to the following
descriptions taken in conjunction with the accompanying drawing, in
which:
[0017] FIG. 1 illustrates a planar SONOS non-volatile memory cell
of the prior art;
[0018] FIG. 2 illustrates a simplified three dimensional diagram of
a portion of a SONOS non volatile memory cell using a FinFET or
triple gate transistor;
[0019] FIG. 3 illustrates in a first cross section the non volatile
FinFET device of FIG. 2;
[0020] FIG. 4 illustrates in a second cross section of the non
volatile FinFET device of FIG. 2;
[0021] FIG. 5 illustrates in a simplified three dimensional drawing
a planar, fully depleted SOI ("FD-SOI") preferred embodiment of a
SONOS non volatile memory cell;
[0022] FIG. 6A illustrates a first cross section of a P-channel
cell of FIG. 5, FIG. 6B illustrates a second cross section of an
N-channel cell of FIG. 5, FIG. 6C is a table indicating operations
of the cells of FIGS. 6A and 6B;
[0023] FIG. 7 illustrates a plan view of a portion of a memory
array implemented using the FinFET embodiment of the SONOS
non-volatile memory cells;
[0024] FIG. 8 depicts a first cross sectional view of the memory
array portion of FIG. 7;
[0025] FIG. 9 depicts a second cross sectional view of the memory
array portion of FIG. 7;
[0026] FIG. 10 depicts a cross sectional view of a preferred
embodiment of a three dimensional memory array incorporating the
invention, the three dimensional array implemented using the SONOS
non-volatile memory cells to form multiple layers of memory arrays
coupled together;
[0027] FIG. 11 illustrates a schematic view of a preferred
embodiment circuit diagram of the memory array incorporating the
SONOS non-volatile memory cells of the invention;
[0028] FIG. 12 illustrates the circuit diagram of FIG. 11 and
depicts an exemplary ERASE operation;
[0029] FIG. 13 illustrates the circuit diagram of FIG. 11 and
depicts an exemplary PROGRAM operation;
[0030] FIG. 14 illustrates the circuit diagram of FIG. 11 and
depicts an exemplary READ operation;
[0031] FIG. 15 depicts an intermediate process step in forming the
three dimensional array of FIG. 10;
[0032] FIG. 16 depicts the array of FIG. 15 after additional
processing steps are completed; and
[0033] FIG. 17 depicts the array of FIG. 6 after further processing
steps are completed.
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0034] The making and using of the presently preferred embodiments
are discussed in detail below. It should be appreciated, however,
that the present invention provides many applicable inventive
concepts that can be embodied in a wide variety of specific
contexts. The specific embodiments discussed are merely
illustrative of specific ways to make and use the invention, and do
not limit the scope of the invention.
[0035] FIG. 2 depicts in a simple three dimensional view a
preferred embodiment of the non-volatile memory cell of the
invention. In the preferred embodiment of FIG. 2, the cell is
implemented using a FinFET or triple gate MOS transistor approach.
A silicon layer 21, typically an epitaxially grown or otherwise
deposited polysilicon, is formed and uniformly doped. Alternatives
to the polysilicon include bulk silicon, which is doped. The doping
is preferentially performed as the polysilicon is deposited or
grown, e.g. in situ and in a preferred embodiment, the doping is
uniform. A charge-trapping dielectric region is formed over the
silicon region, in a preferred ONO embodiment the first layer 15 is
an oxide, the second layer 13 is a nitride, and the top layer 11 is
also an oxide. Alternatives known to those skilled in the art may
also be used, for example a simple ON or NO layer may be used, the
top oxide may be omitted, or the dielectric may be quite complex,
that is multiple materials of high-k dielectrics, oxide stack
layers, SiC, SiON, SiCON and the like may be used to form the
charge trapping dielectric layer. Section 3-3' is illustrated in
FIG. 3 as a cross section, section 4-4' is illustrated in FIG. 4 as
a cross section.
[0036] Gate electrode 17 is then formed over the dielectric and the
silicon layer. The gate electrode is then patterned, so that
silicon layer 21 provides a source, drain, and channel regions,
with the region covered by the gate electrode forming a transistor
gate. The gate electrode can be formed of polysilicon in one
preferred embodiment, alternatives include n-doped or p-doped
polysilicon or a metal gate; again these alternatives are known to
those skilled in the art.
[0037] The FinFET SONOS cell of FIG. 2 has several advantages over
the planar SONOS cell of the prior art. By increasing the channel
width of the device (without greatly increasing the two dimensional
area of the device) the storage electron number for each cell is
increased. Because the source and drain are uniformly doped with
the channel material, and diffusion doping is not used, the
compatibility of this device with complex three dimensional
processes is much greater than the conventional planar SONOS cell
of FIG. 1, that is a greater thermal budget is available for
subsequent semiconductor process steps, over the prior art
approach. This advantageously enables the manufacture of vertical
arrays of cells to form highly integrated memory devices, although
single layer devices are also contemplated as part of this
invention. The SONOS cell of FIG. 2 is also very compatible with
SOC or ASIC processes that incorporate many other types and sizes
of transistors to form a highly integrated ASIC device.
[0038] FIG. 3 provides a cross sectional view of the memory cell
device of FIG. 2 taken along the section labeled 3-3' in FIG. 2.
The uniform doping of the silicon region 21 is shown as "n"-type,
however p-type doping is also contemplated and is part of the
present invention, the device shown in FIGS. 2, 3, 4 and others is
merely exemplary. The charge trapping dielectric layer is again
depicted as an oxide 11, nitride 13, and a top oxide 15, again the
top oxide is optional and alternative, more complex dielectric
stacks may be used so long as they provide charge trapping layers.
Gate electrode 17 is seen above the ONO layer 18 in this cross
section, however it extends over and adjacent two sides of the
silicon region 21 which accordingly forms the channel, source,
drain and gate regions of the device of FIG. 2.
[0039] FIG. 4 is a second cross sectional view of the device of
FIG. 2 taken along the section 4-4' in FIG. 2.
[0040] FIG. 5 depicts another preferred embodiment of a SONOS
non-volatile cell using uniform doping of the silicon layer. In
FIG. 5 a simplified three dimensional view is depicted having a
silicon layer 21, a charge trapping layer 18, and a gate electrode
17. Again the charge trapping layer 18 is preferably comprised of
an oxide, nitride, oxide (ONO) layer, however as is known to those
skilled in the art, the top oxide layer may be omitted for example
to form an ON layer; an NO layer may be also be used. Various
complex dielectric stacks incorporating high-k dielectric materials
may be used so long as the completed structure is a charge trapping
layer. Again the silicon may be formed, in a preferred embodiment,
from doped polysilicon that is deposited or grown and the doping is
uniform, typically the silicon layer 21 will be doped in situ. The
silicon layer 21 may also be formed from bulk silicon, doped or
undoped, III-V materials, as well as polysilicon. Because the
structure in FIG. 5 may be formed as a silicon layer 21 over an
insulator, it is considered in some embodiments an "SOI" or silicon
over insulator structure. The important feature is again that the
channel, source and drain regions are uniformly doped, so that the
device of FIG. 5 provides a broad thermal budget for subsequent
process steps, in contrast to the planar SONOS cell of FIG. 1 with
the thermally diffused source and drain implants. Because the
devices fabricated in this uniform doping manner are depletion mode
devices, the device may be considered a fully depleted SOI (FD-SOI)
device.
[0041] FIG. 6A depicts a simple cross sectional view of the device
of FIG. 5. In FIG. 6A the FD-SOI SONOS cell is shown with a "p"
doping in the channel 21. The gate electrode 17 forms the device
over the uniformly doped region, with one side of the gate
(symmetric device, so source and drain are physically
interchangeable) being the source terminal for the single gate non
volatile memory cell, the other being the drain terminal. The ONO
layers that make up the charge trapping layer 18 provide a means
for storing charge to program and erase the non volatile cell by
changing the threshold of the device, so that when a nominal read
voltage is placed on the gate electrode 17, the device either
conducts, or does not conduct, current that may be easily sensed.
Current flowing in the device can be "hole" or "electron" current,
in either case the device can be assigned a "programmed" or "erase"
state and thus store a logical `1` or a logical `0` for an
indefinite period of time, thereby providing permanent data
storage. Note that for a single cell, source and drain are
interchangeable since the source and drain regions are symmetric.
In the memory string with series memory cells, source and drain of
a cell are not interchangeable since one side of the cells in the
string are connected to a bit line and the other side of the cells
in the string is connected to common source line.
[0042] FIG. 6B depicts in a cross section the device of FIG. 5
wherein the uniformly doped channel region is an "n"-type doping.
Again the gate electrode, fabricated in a self-aligned manner to
the charge trapping ONO dielectric 18, overlies the doped silicon
or polysilicon 21 and thus forms the gate for the non volatile
memory device, while one side of the gate electrode is the source
terminal and the other opposite side becomes the drain terminal.
The text in FIGS. 6A and 6B designates the voltages Vs (source
voltage), Vd (drain voltage), and Vg (gate voltage) for a typical
"read" operation.
[0043] FIG. 6C is a table indicating the voltages applied to the
gate, drain and source terminals for the p-channel and n-channel
SONOS devices of FIGS. 6A and B respectively. The operations that
are performed are Erase, Program and Read (one skilled in the art
will recognize that for these devices, Erase and Program may be
interchanged by simply changing the definition of an erased cell
and a programmed cell. The mechanisms for erasure and programmation
are also provided in FIG. 6C, for the p-channel device the erase is
performed by injection of electrons in to the gate, and for
programming the mechanism is hole injection from the channel into
the charge trapping layer. In a corresponding manner, for the
N-channel SONOS device the mechanism for the erase is channel
electron injection, and the program is by gate hole injection.
[0044] FIG. 7 depicts, in a top down or plan view, a portion of a
layout for implementing a memory array using one of the SONOS cells
of the invention, either the FinFET embodiment (slightly preferred)
or the FD-SOI embodiment may be used with the structure of FIG. 7.
In FIG. 7, a pair of local bit line conductors BL.sub.N and
BL.sub.N+1 are shown running in parallel from left to right. These
conductors may be polysilicon, preferably in situ doped polysilicon
as described above, or other silicon material formed into parallel
conductors. The intersecting lines are control lines and word lines
for implementing a subarray portion of a memory device, for example
the line labeled SSL is a source selection line that will provide a
selection control line to a MOS transistor formed at the
intersection of the SSL line and the bit line inputs. When the
source selection line is active, the MOS transistor formed at that
intersection of the SSL line and the local bit lines will couple
the local bit lines BL.sub.N and BL.sub.N+1 to bit lines running
through the array. Similarly MOS transistors formed at the
intersection of the control line labeled GSL and the local bit
lines will, when the correct voltage is applied, couple the ground
voltage or Vs to the bit lines. Thus the subarray of memory cells
may be selectively made active by the control lines and, at other
times, left inactive. In this manner many cells may be arranged
together to form arrays of memory cells.
[0045] In FIG. 7, SONOS cells of one of the preferred types
described above are provided at each intersection of a word line
WL, which in this exemplary array are provided as 32 lines (more or
less could be used) enumerated 0 to 31. At each intersection of a
gate electrode, the word lines, with the local bit lines (BL lines)
a non volatile storage cell is formed. The vertical electrodes
labeled SSL, WL and GSL are typically formed from polysilicon
conductors running in parallel to each other and arranged in a
direction orthogonal to, or at some other angle to, the bit lines
BL. Thus the intersection points of FIG. 7 depict two columns of 32
cells, or 64 cells total. In a practical array many thousands of
such cells will be provided.
[0046] The word lines are typically considered to be rows, and the
bit lines the columns, of an array. For each column that is active
(as selected by providing the SSL control line to couple the local
bit line to a global bit line, not shown) and coupled to the
correct voltage (GSL control line couples the local bit line to the
reference potential) the word lines must select one of the cells,
here one of 32, because the data is transmitted on a common bit
line for each column. These operations are well known to those
skilled in the memory art.
[0047] A simplified cross sectional view of the section 8-8' of the
structure in FIG. 7 is depicted in FIG. 8. In the column of devices
shown along the silicon region 21, isolation regions are required
between each active device 20, but for simplicity these isolation
regions are not shown. STI or shallow trench isolation could be
used, for example, to electrically isolate the devices along the
silicon region 21. As can be seen from the illustration, the gate
electrode labeled SSL can be used to couple the local bit line 21
to another bit line, when the column is not active the local bit
line 21 will be electrically isolated. Similarly the gate electrode
labeled GSL can be used to couple the local bit line 21 to the Vs
or ground potential, when the gate electrode GSL does not have a
proper potential placed on it, the local bit line 21 will not be
coupled to a ground voltage.
[0048] One skilled in the art will recognize that to couple one of
the active devices 20 to the bit line input/output node BL, the
devices between a selected one of the devices 20 have to act as
pass through transistor devices. In other words, in this embodiment
a NAND architecture is used, so that while one of the non volatile
memory devices 20 is active for a read, for example, the other
transistors are used to pass the signals from the selected cell to
the bit line node, or to couple the drain of the selected cell to
the voltage Vs. This operation will be explained in further detail
below, but a NAND architecture, and the operation of such an
architecture, for FLASH non volatile memory devices is known to
those skilled in the art.
[0049] FIG. 9 depicts a cross section taken along section 9-9' of
the plan view of the memory array structure depicted in FIG. 7. In
FIG. 9 the silicon, polysilicon or epitaxial silicon bit lines
BL.sub.N, BL.sub.N+1 are depicted. In this exemplary embodiment the
FinFET structure is used to implement the non volatile cells, so
that the charge trapping ONO layers 18 are shown over three sides
of the bit line, and the gate electrode 17 which is coupled to a
word line WL (not shown) overlies both the three sides of the
charge trapping layer 18 and extends, in this view over both of the
bit lines BL. In operation, when a potential corresponding to a
read voltage is placed on the word line, the cells 20 will either
conduct current, or not conduct current, depending on whether they
are "programmed" or "erased" as shown in Table 6C. The flow of
current is observed and the stored data is determined from that
condition.
[0050] Those skilled in the art will recognize that by providing a
uniformly doped source, drain and channel region in the devices of
FIGS. 2 and 5 above, the devices are "fully depleted." In other
words, unlike an enhancement mode device whereby a potential placed
on the gate forms a channel in a counter doped channel region
thereby coupling a normally isolated source and drain regions,
these devices operate in depletion mode. When a negative potential
(relative to the source and drain potentials) is placed on the
gate, a normally open channel can be depleted or closed. Thus the
program, read and erase operations of these SONOS cells will be
different from the prior art cell operations based on "enhancement"
mode devices.
[0051] As is known to those skilled in the art, for a non-volatile
memory cell to work as a storage location for example in a FLASH
application, the cell has to have a threshold voltage that is
changed between an "erased" state and a "programmed" state so that
when a "read" voltage is placed on the gate terminal of the device,
current either does (greater than the threshold) or does not (less
than the threshold) flow. The cells can be used in FLASH or EEPROM
applications, the difference between the two being in how the erase
and program steps are performed, in a FLASH device the cells are
erased and programmed in groups or subarrays simultaneously, this
is sometimes called FLASH NAND architecture. In a NOR architecture
individual cells or groups of cells can be accessed. Different
applications make different architectures more or less desirable;
NOR is typically used for permanent code storage for example, while
NAND is typically used for data storage such as for cameras, cell
phones, music players and the like.
[0052] In FIG. 6, two SONOS cells are depicted. FIG. 6A depicts in
cross section a p-channel depletion mode (uniformly doped channel)
SONOS device, and FIG. 6B depicts in cross section an n-channel
depletion mode (uniformly doped channel) SONOS device. FIG. 6C
presents a table showing, for a particular dielectric and channel
structure, the voltages applied in an exemplary embodiment to
program, erase and read the cells. For example, the p-channel
device is programmed using hole injection, this is observed to
occur when the gate voltage is placed at a potential of -10 Volts,
the source and drain voltages are at zero. In this mode holes are
injected into the charge trapping layer and change the threshold
voltage (from an initial "erased" state). To return the cell to its
erased state, the p-channel device requires a gate voltage of -14
Volts, again the source and drain terminals are placed at zero
volts. This causes electrons to travel into the charge trapping
layer and thus the device threshold is returned to its initial, or
erased, state. A read is executed for the p-channel device by
placing a 0 Volts potential on the gate electrode, and 0 Volts
potential on the source electrode, and a -1 Volts potential on the
drain electrode, thus if the device is programmed, hole current
will flow while if the particular device is erased, no hole current
will flow. Note that by reversing the definitions of "programmed"
and "erased," the voltages for "programming" and "erasure" may be
exchanged. The key point is that the cell has two states, one in
which a detectable current flows, and one in which the current does
not flow, and that the states may be returned by simple
manipulation of the source, drain and gate voltages in a repeatable
fashion thousands or millions of times.
[0053] As shown in FIG. 6C, the n-channel SONOS device also may be
programmed and erased but the potentials used are different. For
example, for erasure the gate potential is increased to 14 Volts,
and the source and drain terminals are maintained at 0 Volts. In
this condition channel electrons are drawn to the charge trapping
layer. To program the n-channel device, a 10 Volt potential is
placed onto the gate and the source and drain terminals are placed
at a 0 Volts potential. In this condition hole carriers are
injected from the gate into the charge trapping layer thus changing
the potential from the "erased" state. A read is performed by
placing a 0 Volts potential on the gate and source terminal while a
voltage of 1 Volt (in this particular example) is placed on the
drain, and electron current is detected to determine the state of
the SONOS cell is either erased or programmed. Those skilled in the
art will recognize that a logical value of `1` or `0` is assigned
to the programmed and erased state, enabling the cell to store
binary data as is known in the art.
[0054] The numbers 3/7/6 (nm) in the table denotes the
bottom-oxide/nitride/top-oxide thickness of the preferred ONO
thickness for device operation in certain embodiments. The
thickness of nitride is designed to provide sufficient nitride
traps for carrier storage. The bottom and top oxide thickness are
designed for isolation during cell retention and carrier injection
during program/erase operation. First, the bottom and top oxide
must be substantially thick to prevent carriers from escaping from
the nitride during the cell data retention period. Second, the
thickness of bottom oxide and top oxide are also designed to
control the hole and electron injection. Since oxide (e.g.
S.sub.iO.sub.2) shows higher barrier for holes (.about.4.7 eV) than
electrons (.about.3.2 eV), the bottom oxide thickness is thinner
for hole injection from the substrate and thicker for electron
injection from the gate. Inversely, if the hole injection is
performed from the gate, a thinner top oxide thickness is
preferred.
[0055] FIG. 7 depicts, in a simplified top view, a portion of a
single level memory array implemented using the SONOS non volatile
memory cells. Either type of the preferred cells may be used and a
non volatile cell is formed at the intersection of any of the word
lines WL0 . . . WL31 as shown in FIG. 7, and either column or bit
line BL.sub.N or BL.sub.N+1. There are additional transistors
formed at the intersections of the source select line SSL, which is
a gate electrode, and the bit lines, and the GSL line which is a
gate electrode, and the bit lines. To operate the memory array of
FIG. 7, the SSL line couples the local bit lines to a global bit
line, the GSL line couples the bitlines to a ground potential, one
of the word lines WL selects a row that is active by placing a
program, erase, or read potential on that word line, and the
remaining word lines WL are placed in a potential that allows the
devices on either side of the selected non-volatile cell (at the
intersection of the active word line WL and the bit line BL) to
pass signals to and from the bit lines BL. Thus all of the devices
formed at the intersections of the word lines WL and the bit lines
BL play a role in each memory cycle, but for a read cycle only one
device is active while the others "pass through" the signals
(ground on one side, and coupling the select lines through the SSL
transistor to the global bit lines). This operation is a
characteristic of the NAND architecture as explained in more detail
below.
[0056] FIG. 8 depicts the single level memory array portion of FIG.
7 in a first cross sectional view along section 8-8'. In FIG. 8,
the non volatile devices are shown formed with the uniformly doped
bit line silicon, or polysilicon 21, as the channel. Each cell has
a source and drain region (not shown in detail) formed in the
silicon channel on either side of the gate electrodes. The storage
cells are formed where the word lines WL0 . . . WL31 intersect with
and overlie the silicon channel 21. At each intersection a charge
trapping 18 is formed to complete the single gate cells. For the
devices formed at the SSL and GSL gate electrode intersections with
the silicon channel 21, typically the threshold will not be changed
from the initial state, that is, it is anticipated that these
devices will never be "programmed." In that case, these devices are
simple depletion mode transistors and they will coupled the silicon
channel 21 to a voltage reference Vs on one end, and to the global
bit lines (not visible) on the other end. One of the word lines WL
is active in a read cycle, and the selected device will be coupled
to the global bit line BL on one end, and to the voltage reference
Vs on the other end, by operating the remaining devices formed
beneath the other word lines WL as pass through or pass gate
transistors.
[0057] FIG. 9 depicts a cross section taken along section 9-9' of
the single level memory array in FIG. 7. In FIG. 9, the silicon
region 21 is depicted for the two bit lines (although many more
would be present in a practical array, two were selected for
illustration only); each has a charge trapping ONO dielectric 18
overlying the bit line on three sides (for this FinFET example) and
each is then further covered by the gate electrode material 17
which will be coupled to one of the word lines WL0 . . . WL32.
[0058] FIG. 10 depicts a cross sectional view of a multiple layer
(memory layer 4, 3, 2, 1) vertically stacked array of nonvolatile
memory cells using the SONOS cells from FIG. 4, for example. Each
memory layer 1, 2, 3, 4 of FIG. 10 is implemented similarly to the
single level embodiment of FIGS. 7, 8 and 9. In FIG. 10, a
semiconductor substrate such as a silicon substrate 51 is provided.
Isolation regions 57, here depicted as shallow trench isolation or
STI regions, are formed. Between the isolation regions, transistors
such as high voltage MOS transistors may be provided, using known
n-well and p-well processes, these may provide CMOS devices. Source
and drain regions 55 may be formed and gate electrodes 53 are
provided over typical gate dielectrics to complete these high
voltage transistors. These transistors are required, for example to
provide the high voltage program (14 volts) and erase (10 volts)
voltages needed to operate the non-volatile memory cells.
Interlevel dielectric material, which may be a simple oxide, or
nitride, or which may include stacks of dielectrics including the
high-k materials of the art, layers of materials such as SiON,
SiCON, oxides, nitrides, tantalum oxides and the like may be used
to form the interlevel dielectrics. Vias 61 are formed to provide
an electrical path from the layers formed above the substrate to a
contact region on the substrate, although only one via is shown
from the memory layer 1 to the substrate, many more may be
provided. Memory layer 1 is then formed from a polysilicon or
epitaxial silicon layer as described above, and as described above,
self aligned gate dielectrics including charge trapping layers and
gate electrodes are formed above and overlying the silicon layer so
that at every intersection of a silicon line and a word line WL, a
memory cell is provided as shown in FIGS. 7, 8 and 9. Ground select
transistors GSL and source select transistors SSL1 are formed to
provide the control circuits for the cells arranged along memory
layer 1 in FIG. 10. The structure repeats in a vertical direction
to form a vertically stacked, or three dimensional, memory array.
Again dielectric material is provided over memory layer 1 and
separating it vertically from memory layer 2, vias are formed to
couple the memory layer electrically to circuits arranged
vertically above it, and the vias are used to distribute, for
example, the Vs potential to each layer, or to couple each layer to
a global bit line.
[0059] In FIG. 10 this three dimensional array of cells is shown
having 4 memory layers, more or less layers could be provided in
any given example. In integrating the memory cell array with other
circuitry, it would be most preferred to use the local interconnect
layers, usually formed from polysilicon, as the memory layers in
FIG. 10 and to use the metal layers, usually formed from copper,
aluminum, single or dual damascene metallization, or aluminum
copper alloys, to form the bit line or BL layers. As each memory
layer is formed, charge trapping dielectric layers and gate
electrodes are formed and using conventional SC processes, are self
aligned to one another. Isolation regions are used to isolate each
cell from the adjacent memory cells, for simplicity these are not
illustrated here but may be, for example, shallow trench isolation
or STI regions.
[0060] After the top memory layer, 4 in the example illustrated in
FIG. 10, is completed, a corresponding interlevel dielectric layer
is formed over it, and a via is formed to couple the memory layer
to one or more bit line layers. When the array of FIG. 10 is
integrated in an ASIC or SOC with other circuitry, it would be
preferred to use one or more of the metal layers to form the global
bit lines, labeled BL. Of course the bit lines could be polysilicon
or SOI, but in a preferred embodiment they would be formed from the
metal layer conductors.
[0061] FIG. 11 presents a circuit schematic diagram for a portion
of a memory array formed using the SONOS non volatile memory cells
of the present invention. Either the FD-SOI or FinFET embodiment
cells may be used, with each having a uniformly doped channel
without thermal diffusion regions. The bit lines labeled BL1, BL2,
BL3, and BL4 are depicted traversing two banks or subarrays of
memory cells, an upper bank and a lower bank. These banks are
arranged on either side of a voltage potential conductor labeled
Vs. The control transistors 73 coupled at their gate electrodes to
the control line labeled GSL are used selectively to enable the
upper or lower portions of the memory array. The source select
transistors 71 coupled to control lines SSL1, SSL2, SSL3, SSL4 are
used for each bit line to select one of the layers Layer 1, Layer
2, Layer 3, Layer 4 to couple to the bit lines BL. The word lines
WL0 . . . WL31, which are provided in two sets, one for the upper
portion and one for the lower portion, are used to select a
particular non volatile memory cell 75 for each layer. The
replicator dots in the figure and the hash marks in the columns of
FIG. 11 indicate that although not every word line WL is depicted,
there are in this example 32 rows in each of the upper and lower
portions and 32 word lines. The cells in the Figure represent an
array of 32 cells.times.4 layers.times.2 arrays (upper and lower)
for a total of 256 cells for each bit line BL1, 2, 3, 4. Because
the arrays are layered in the vertical direction, the density in a
two dimensional or area measurement for silicon area used is much
higher than a single layer array.
[0062] For a read cycle each bit line BL1, 2, 3, 4 is coupled to
one memory cell 75, this is accomplished using the word lines WL to
select an active row, the source select lines SL1, 2, 3, 4 to
choose an active layer from the memory layers 1, 2, 3, 4, and the
GSL lines to select an active bank or portion (upper or lower) of
the array to couple to the voltage potential. As described above,
the cells that are arranged on either side of the active cell along
the layers must be placed in a "pass through" mode to couple the
drain side of the active non volatile SONOS memory cell to the
voltage potential Vs and the source side of the cell to the source
select transistor 77, which further couples the data to the bit
lines BL.
[0063] FIG. 12 depicts the upper portion, for example, of an array
as depicted in FIG. 11, for an erase operation. In the erase
operation, which is a so-called "FLASH" erase, every non-volatile
memory cell is simultaneously affected. As shown in FIG. 12, the
cells may be implemented using a p-channel type device. In the
p-channel erase operation, the gate electrode for each cell
(coupled to word lines WL0 . . . WL31) are taken to the erase
potential of -14 Volts. The source select lines are left at a "0"
potential, as is the gate select control line GSL, so that the
voltage potential Vs is a "don't care" as the nodes are not coupled
to Vs. The mechanism for the erase is gate electron injection, that
is, electrons are injected into the charge trapping ONO layers from
the gate. After erasure the cells are all left at a logical `1`
value. Subsequent program operations will be used to change those
cells that should be at a logical `0` value for data that is stored
in the array.
[0064] FIG. 13 depicts, for the array of non volatile cells in FIG.
12, a program operation. In FIG. 13, the cells coupled to word line
WL1 receive a potential of -10 volts on the gate electrode. For
those cells in the layer 2, the SSL2 line provides a voltage of -3
volts. This potential will cause the select transistors coupled to
the SSL2 line to couple the voltage at the bit lines BL to the
active cells (Layer 2, cell coupled to word line WL1). The
remaining SSL transistors receive a potential of 0 Volts on their
gate electrodes, so that the remaining layers are not coupled to
the bit lines BL. The ground select control line GSL is also at a
potential of 0 Volts so that the voltage Vs is a "don't care"
labeled F, since the potential Vs is not coupled to a cell. The
remaining word lines WL are placed at a potential of -5 Volts, this
potential is greater than the threshold potential for the remaining
non volatile cells and they operate as "pass through" transistors
which ensures the potential for programming placed on the
respective bit lines BL will be coupled to the active cells
(coupled to the word lines WL1 in layer 2 for each bit line BL1, 2,
3, 4.)
[0065] The mechanism for programming is to place a "0" or a "1" in
the active cells. However, since erasure is performed first and
erasure is defined, for the p-channel example, as a "1", the cells
that are changed in state are only those in the portions labeled
`program "0"` in the FIG. 13, that is for the cells coupled to bit
lines 1, and 3, these cells will be erased, while the active cells
coupled to bit lines 2 and 4 will remain at a "1". This is
accomplished by providing a different potential on bit lines 1, and
3, (0 volts for this p-channel example) than for the bit lines
labeled 2, 4 (-3 volts in this example). For the cells being
programmed to "0", holes are injected from the channel into the
charge trapping layer, thereby changing the threshold potential and
the logical value of the cell from the erased state of "1" to the
programmed state of "0."
[0066] FIG. 14 depicts the array portion of FIGS. 11, 12, and 13
for a READ operation. In FIG. 14, the source select line SSL2 is
again programmed with a potential to select the second memory layer
for each bit line BL1, 2, 3, 4. Again the word lines WL0 and WL2-31
are programmed to the cells coupled on those rows all act as "pass
through" or "pass gate" transistors by providing a potential
greater than their threshold voltages, e.g. -3 Volts, to each gate
electrode for each memory cell. The potential on word line WL1 is 0
volts, as indicated in FIG. 6C, for the read operation. The ground
select line GSL is set to a potential of -2 Volts, so that it acts
as a pass gate to couple the potential Vs to the selected
transistor, Vs=0 being coupled to the source terminal as shown in
FIG. 6A. The bit line voltages BL are programmed to a -1 potential,
this potential ends up ate the drain terminal for the active
transistors as indicated in the table of FIG. 6C.
[0067] In operation, the mechanism of reading the active cells, for
each of the four memory cells coupled to the respective bit lines
BL1, 2, 3, 4, each active cell located on the corresponding memory
layer, Layer 2 for each bit line BL and each coupled to word line
WL1, is hole current Ih. If the active memory cell is a programmed
cell with a higher threshold voltage, this current does not flow
and "0" will be read. If the active memory cell is an erased cell
with a lower threshold voltage, the current flows and "1" will be
read.
[0068] The memory cells shown in FIGS. 13-14 serve as pass
transistors in program (FIG. 13) and read (FIG. 14) all have a WL
potential higher than threshold voltage since the cells have to
pass and transfer the BL voltages. The WL potential in program node
is higher (-5V) since the pass transistors have to transfer a
higher BL voltage (-3V). The WL potential in program is lower (-3V)
since the pass transistors have to transfer a lower BL voltage
(-1V). During a read operation, the erased cell ("1" state) stores
electrons with a lower threshold voltage and thus, hole current
flows. The programmed cell ("0" state) stores holes with a higher
threshold voltage and thus, hole current does not flow. Note again
that "erase" and "program" may be interchanged, as is known in the
art.
[0069] FIG. 15 depicts the first several steps in the process of
forming the three dimensional memory array of FIG. 10. In FIG. 15,
a semiconductor substrate 51 is provided. Preferably this could be
a 100 oriented silicon substrate. Conventional semiconductor
process steps are then performed to form the isolation trenches 57,
source and drain regions 55, gate electrodes 53. For example, a pad
oxide layer may be grown on a clean substrate, an oxidation
resistant layer such as a nitride may be provided, openings may be
made by pattern and etch in the nitride and oxide, trenches may be
etched into the substrate using an anisotropic etch. An oxide may
be deposited within the trenches, the nitride acting as an
oxidation resistant layer to prevent oxide from forming outside the
trenches, or the oxide may be over-deposited and etched back. The
nitride can then be removed and self aligned gate dielectric, gate
electrode, patterning of the electrode, doping of the source and
drain regions by ion implant and/or thermal diffusion, and other
conventional steps such as sidewall formation and salicidation may
be performed to form high voltage CMOS devices as is known in the
art.
[0070] Next, the interlevel dielectric 61 is formed over the
substrate, and if preferred a variety of dielectric materials may
be used in a stack arrangement. Vias 59 are formed to couple the
(yet to be formed) memory layers down to the substrate and/or the
high voltage MOS devices.
[0071] FIG. 16 depicts steps continuing in the formation of the
three dimensional array of FIG. 10, following another intermediate
step after the structure in FIG. 15 is complete. In FIG. 16 an
epitaxial silicon layer or polysilicon layer 63 is deposited and
preferably doped "in situ" to form the uniformly doped channel
regions for the SONOS cells.
[0072] FIG. 17 then illustrates the three dimensional array in
another intermediate stage after additional steps are completed on
the structure of FIG. 16. After the polysilicon or epitaxial
silicon 63 is formed to form the uniformly doped channel region, a
charge trapping dielectric layer is formed, preferably by
depositing an oxide layer, a nitride layer, and optionally a top
oxide layer to form an ONO dielectric 18, then gate electrodes 17
are formed of polysilicon or other gate materials and again self
aligned photolithographic pattern and etch steps are used to
complete the SONOS structures as shown in FIG. 17.
[0073] The remaining steps to form a multiple layer vertical array
such as the one illustrated in FIG. 10 are repeated performances of
those steps already described. An interlevel dielectric is
deposited for each memory layer, and another layer is started above
it by first depositing or forming a polysilicon or epitaxial
silicon layer that is uniformly doped, and again the charge
trapping layer dielectric and the gate electrode material is
deposited, patterned, and etched to complete the SONOS devices on
that layer. The layers are coupled together by vias 59 formed in
the interlevel dielectrics 61 and after the via formation, the next
layer begins again.
[0074] Finally, as shown in FIG. 10, a metal bit line layer is
deposited or formed over the top layer of interlevel dielectric
material and contacting the tops of the vias to couple the bit line
to the layers below it. In this manner a circuit as provided in the
schematic of FIG. 11 is implemented. A single layer can be used, or
as many layers as the process can support, typically the memory
cells will be formed on the polysilicon or local interconnect
layers, and the first level of metal will be used to form the bit
line layer, in an ASIC or SOC process.
[0075] The invention thus provides an improved SONOS non volatile
memory cell for use in integrated circuits that is based on a
uniformly doped channel region. This uniformly doped channel region
is very tolerant of subsequent process steps in forming a
vertically integrated array and is therefore much more useful than
the cells of the prior art. The cells may be implemented as FinFET
or triple gate devices, or as FD-SOI planar devices. The cells are
formed on a layer with the bit lines forming the bottom layer, the
charge trapping dielectrics provided over the bit lines, and the
word lines forming a top layer arranged in another direction so
that a memory cell is provided at each intersection of a word line
with a bit line. The cells may be formed as p-channel or n-channel
devices. Many layers of cells may be formed and coupled together
using conventional semiconductor processing steps in a series of
steps. Because the SONOS devices do not rely on thermally diffused
source and drain regions, the thermal budget for the subsequent
process steps can be quite generous.
[0076] The novel SONOS cells and the three dimensional memory
arrays disclosed overcome the fabrication and thermal processing
limitations of the prior art, while improving the performance of
the resulting array. The preferred embodiments include non volatile
memory arrays implemented as embedded FLASH or stand alone FLASH
integrated circuits. In a preferred embodiment, the SONOS cells are
arranged as a NAND FLASH array with excellent device density.
[0077] Although the present invention and its advantages have been
described in detail, it should be understood that various changes,
substitutions and alterations can be made herein without departing
from the spirit and scope of the invention as defined by the
appended claims. For example, it will be readily understood by
those skilled in the art that the methods may be varied while
remaining within the scope of the present invention.
[0078] Moreover, the scope of the present application is not
intended to be limited to the particular embodiments of the methods
and steps described in the specification. As one of ordinary skill
in the art will readily appreciate from the disclosure of the
present invention, processes, or steps, presently existing or later
to be developed, that perform substantially the same function or
achieve substantially the same result as the corresponding
embodiments described herein may be utilized according to the
present invention. Accordingly, the appended claims are intended to
include within their scope such processes or steps.
* * * * *