U.S. patent application number 12/076009 was filed with the patent office on 2008-10-23 for cmos image sensor and method for fabricating the same.
Invention is credited to Chang Young Hong.
Application Number | 20080258249 12/076009 |
Document ID | / |
Family ID | 36179864 |
Filed Date | 2008-10-23 |
United States Patent
Application |
20080258249 |
Kind Code |
A1 |
Hong; Chang Young |
October 23, 2008 |
CMOS image sensor and method for fabricating the same
Abstract
A CMOS image sensor and a method for fabricating the same
improve photosensitivity by imparting a color filter layer with the
function of a microlens layer. The CMOS image sensor includes a
semiconductor substrate; a plurality of photo-sensing elements
formed in the semiconductor substrate; and a color filter layer
comprised of a plurality of color filters for filtering light
according to wavelength, wherein the plurality of color filters
correspond to the plurality of photo-sensing elements and each
color filter has a predetermined curvature for focusing light and
for transmitting the focused light according to a corresponding
wavelength.
Inventors: |
Hong; Chang Young;
(Namyangju-city, KR) |
Correspondence
Address: |
MCKENNA LONG & ALDRIDGE LLP
1900 K STREET, NW
WASHINGTON
DC
20006
US
|
Family ID: |
36179864 |
Appl. No.: |
12/076009 |
Filed: |
March 12, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11250475 |
Oct 17, 2005 |
7364936 |
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12076009 |
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Current U.S.
Class: |
257/432 ;
257/E27.134; 257/E31.127 |
Current CPC
Class: |
H01L 27/14627 20130101;
H01L 27/14621 20130101; H01L 27/14685 20130101; H01L 27/14645
20130101; H01L 27/14689 20130101 |
Class at
Publication: |
257/432 ;
257/E31.127 |
International
Class: |
H01L 31/0232 20060101
H01L031/0232 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 18, 2004 |
KR |
10-2004-0083062 |
Claims
1. A CMOS image sensor comprising: a semiconductor substrate; a
plurality of photo-sensing elements formed in said semiconductor
substrate; and a color filter layer comprised of a plurality of
color filters for filtering light according to wavelength, wherein
the plurality of color filters correspond to said plurality of
photo-sensing elements and each color filter has a predetermined
curvature for focusing light and for transmitting the focused light
according to a corresponding wavelength.
2. A CMOS image sensor comprising: a microlens layer made of
colored resist.
3. The CMOS image sensor of claim 1, further comprising: an
insulating interlayer covering said semiconductor substrate
including said plurality of photo-sensing elements, wherein said
color filter layer is formed on said insulating interlayer.
4. The CMOS image sensor of claim 1, wherein the color filters of
said color filter layer are provided at fixed intervals.
5. The CMOS image sensor of claim 1, wherein said color filter
layer is planarized for receiving a lens layer.
6-12. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of Korean Patent
Application No. 10-2004-0083062, filed on Oct. 18, 2004, which is
hereby incorporated by reference for all purposes as if fully set
forth herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a CMOS image sensor, and
more particularly, to a CMOS image sensor and a method for
fabricating the same. The CMOS image sensor improves
photosensitivity by providing a color filter layer having a
microlens function and by eliminating the need for a microlens
photoresist layer.
[0004] 2. Discussion of the Related Art
[0005] An image sensor is a semiconductor device for converting an
optical image into an electrical signal and may be broadly
categorized as a charge-coupled device (CCD) or a complementary
metal-oxide-semiconductor (CMOS). A CMOS image sensor comprises a
photosensor for receiving light and a logic circuit for converting
the received light into an electrical signal. To improve
photosensitivity, the fill factor of the CMOS image sensor should
be improved. That is, the area occupied by the photosensor should
be increased with respect to the overall area of the entire CMOS
image sensor. There is a limit to increasing the photosensor area
since the CMOS image sensor itself has a finite size.
[0006] Alternatively, photosensitivity can be effectually improved
by concentrating or focusing incident light onto the photosensor.
Incident light on the CMOS image sensor outside the area of a
photosensor is redirected to land on the photosensor. To achieve
this in the related art, a microlens that corresponds to the
photosensor is provided. The microlens is typically on a color
filter array.
[0007] As shown in FIG. 1, a CMOS image sensor according to the
related art includes a semiconductor substrate 10, an insulating
interlayer 11, a color filter layer 12 formed on the insulating
interlayer 11, a planarization layer 13 formed on the color filter
layer 12, and a plurality of microlenses 14 formed on the
planarization layer 13. The semiconductor substrate 10 includes a
lower layer (not shown) of metal lines interconnected with a
plurality of photodiodes generate electrical charges according to
an amount of incident light. Furthermore, and the entire surface of
the lower layer is covered with the insulating interlayer 11.
[0008] The color filter layer 12 is comprised of an array of red,
green, and blue patterns for filtering light according to
wavelength or color. Each microlens 14 is formed in a convex shape
having a predetermined curvature and height for focusing light onto
a corresponding photodiode through one of the patterns of the color
filter layer 12. Generally, the microlenses 14 are formed of a
polymer-based resin, typically, a photoresist, and can be
completely formed by deposition, patterning and reflowing
processes. The processes of microlens formation and color filter
array formation are directly related to the color characteristics
of the CMOS image sensor.
[0009] In a method for fabricating the CMOS image sensor described
above, after a basic lens array pattern including a plurality of
lens formation blocks is formed, each block of the lens pattern is
imparted with its predetermined curvature by reflowing. Each lens
formation block has a rectangular section and is separated by a
fixed interval. In the reflowing process, however, it is difficult
to maintain the proper interval between lenses. Moreover, due to
characteristics of the material used for forming the microlens,
e.g., photoresist, some of the energy of the incident light is lost
or attenuated during transmission to the lower layers. The amount
of light loss varies depending on wavelength. That is, about
2.about.5% of the light is not transmitted by the microlens
material. Thus, the photosensitivity of the image sensor is reduced
accordingly.
SUMMARY OF THE INVENTION
[0010] Accordingly, the present invention is directed to a CMOS
image sensor and a method for fabricating the same that
substantially obviates one or more of the problems due to
limitations and disadvantages of the related art.
[0011] An advantage of the present invention is to provide a CMOS
image sensor and a method for fabricating the same that improves
photosensitivity by imparting a color filter layer with the
function of a microlens layer.
[0012] Another advantage of the present invention is to provide a
CMOS image sensor and a method for fabricating the same which
simplifies image sensor manufacture.
[0013] Another advantage of the present invention is to provide a
CMOS image sensor and a method for fabricating the same which
prevents light energy loss attributable to a microlens photoresist
layer.
[0014] Another advantage of the present invention is to provide a
CMOS image sensor and a method for fabricating the same which
enables a reduction in the overall height of a device.
[0015] Additional features and advantages of the invention will be
set forth in the description which follows, and in part will be
apparent from the description, or may be learned by practice of the
invention. The objectives and other advantages of the invention
will be realized and attained by the structure and method
particularly pointed out in the written description and claims
hereof as well as the appended drawings.
[0016] To achieve these and other advantages and in accordance with
the purpose of the present invention, as embodied and broadly
described, there is provided a CMOS image sensor comprising a
semiconductor substrate; a plurality of photo-sensing elements
formed in the semiconductor substrate; and a color filter layer
comprised of a plurality of color filters for filtering light
according to wavelength, wherein the plurality of color filters
correspond to the plurality of photo-sensing elements and each
color filter has a predetermined curvature for focusing light and
for transmitting the focused light according to a corresponding
wavelength.
[0017] In another aspect of the present invention, there is
provided a CMOS image sensor comprising a microlens layer made of
colored resist.
[0018] In another aspect of the present invention, there is
provided a method for fabricating a CMOS image sensor. The method
comprises forming a color filter layer comprised of a plurality of
color filters for filtering light according to wavelength, wherein
the plurality of color filters correspond to a plurality of
photo-sensing elements formed in a semiconductor substrate; forming
a sacrificial layer for microlens formation on the color filter
layer; patterning the sacrificial layer to form a plurality of lens
formation blocks corresponding to the plurality of color filters;
reflowing the patterned sacrificial layer to impart each lens
formation block with a predetermined curvature; and imparting each
color filter of the plurality of color filters with a desired
predetermined curvature corresponding to the predetermined
curvature of the lens formation blocks by etching the patterned
sacrificial layer and the color filter layer to completely removing
the patterned sacrificial layer.
[0019] The present invention relates to a color filter array
process and a microlens formation process in the fabrication of a
CMOS image sensor. The present invention overcomes the problem of
light energy loss which occurs when photoresist is used as the
microlens material. In the CMOS image sensor according to the
present invention, the color filters or patterns of the color
filter layer or array each have a predetermined curvature formed by
wet-etching such that the color filter layer also serves to focus
the light. That is, the individual color filters of the color
filter layer are each imparted with a predetermined curvature and
thus perform the function of a lens in addition to color
separation. Since the color filter layer is patterned as a
plurality of lenses, the light can be focused as well as
selectively transmitted by wavelength using a single layer. Thus,
light transmissivity is improved.
[0020] The CMOS image sensor of the present invention comprises a
microlens layer made of a material for forming the respective
patterns of a color filer array, that is, colored resist of red,
green, and blue, such that the focusing function of a conventional
microlens layer is imparted to the color filter layer. Since each
lens-shaped color filter of the color filter layer has the desired
predetermined curvature for focusing light according to the
corresponding wavelength, it is unnecessary to form an additional
layer for focusing the light via each color filter of the color
filter layer. That is, there is no requirement for forming a
microlens photoresist layer on the color filter layer. Thus, any
potential light energy loss by the microlens photoresist layer is
wholly prevented.
[0021] It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory and are intended to provide further explanation of
the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate embodiments of
the invention and together with the description serve to explain
the principles of the invention. In the drawings:
[0023] FIG. 1 is a cross-sectional view of a CMOS image sensor
according to the related art;
[0024] FIG. 2 is a flow chart of the process for fabricating a CMOS
image sensor according to the present invention; and
[0025] FIGS. 3A-3E are cross-sectional views of the process for
fabricating a CMOS image sensor according to the present
invention.
DETAILED DESCRIPTION OF THE INVENTION
[0026] Reference will now be made in detail to embodiments of the
present invention, examples of which are illustrated in the
accompanying drawings. Wherever possible, like reference
designations will be used throughout the drawings to refer to the
same or similar parts.
[0027] Referring to FIG. 2, the process steps for fabricating the
CMOS image sensor according to the present invention include
forming a lower layer of a plurality of photo-sensing elements,
e.g. photodiodes, and a CMOS logic circuit (S1), forming an
insulating interlayer to protect the lower layer (S2), forming a
color filter layer including an array of color filters (S3),
optionally forming a planarization layer on the color filter layer
(S4), depositing and patterning a sacrificial layer for microlens
formation (S5), forming a plurality of microlenses by reflowing the
patterned sacrificial layer (S6), and performing wet etching to
transfer a predetermined curvature to the color filter layer
(S7).
[0028] FIGS. 3A-3E illustrate a method for fabricating the CMOS
image sensor according to the present invention.
[0029] Referring to FIG. 3A, a lower layer (not shown) is formed in
a semiconductor substrate 40 and an insulating interlayer 41 is
formed to protect the lower layer. A planarized passivation layer
(not shown) for protecting the device from moisture and abrasion is
formed on the insulating interlayer. A color filter layer 42 is
formed by sequentially coating the passivation layer with layers of
colored photoresist, wherein each layer corresponds to each color
of red, green, and blue. The respective layers of colored
photoresist are then patterned to form a plurality of color filters
for filtering light according to wavelength. The lower layer of the
semiconductor substrate 40 includes a plurality of photodiodes,
which may be in the form of a plurality of photo-gates, for
generating electrical charges according to the amount of incident
light. The lower layer of the semiconductor substrate 40 also
includes a metal wiring layer for interconnecting the photodiodes
and a CMOS logic circuit (not shown) for detecting the electrical
charges and outputting an image signal according to an optical
signal received by the photodiodes. The color filters of the color
filter layer 42 are formed to correspond to the arrangement of the
photodiodes. The insulating interlayer 41 may be formed as a
multi-layered structure covering an entire surface of the lower
layer. The insulating interlayer 41 may include a first insulating
interlayer formed on the entire surface of the semiconductor
substrate, a light-shielding layer formed on the first insulating
layer for preventing light from reaching portions other than the
photodiodes, and a second insulating interlayer formed on the
light-shielding layer.
[0030] Referring to FIG. 3B, a planarization layer 43 is formed on
the color filter layer 42. The planarization layer 43 provides a
surface for forming a lens layer and controls a focusing
distance.
[0031] Referring to FIG. 3C, a sacrificial layer (not shown) for
lens formation is formed and selectively patterned to form a
plurality of lens formation blocks, wherein each block has a
rectangular section and is separated by a fixed or regular
interval. This forms a sacrificial layer pattern (not shown) which
undergoes a reflowing process to form a lens-shaped sacrificial
layer 44, wherein each lens structure is imparted with a
predetermined curvature. The sacrificial layer may be formed of a
photoresist material having reflow characteristics according to a
thermal treatment performed with respect to the sacrificial layer
pattern. The color filter layer 42 may itself be planarized and the
sacrificial layer may be formed on the planarized color filter
layer with no planarization layer 43.
[0032] Referring to FIG. 3D, an isotropic etching process such as
wet-etching is performed with respect to the lens-shaped
sacrificial layer 44.
[0033] Referring to FIG. 3E, as a result of the wet etching
process, the predetermined curvature of the lens-shaped sacrificial
layer 44 is directly transferred to the underlying color filter
layer 42, thereby forming a lens-shaped color filter layer
comprised of lens-shaped color filters 45a, 45b, and 45c. In
performing the wet etching process, the lens-shaped sacrificial
layer 44 and the planarization layer 43 (if applied) are completely
removed.
[0034] In the CMOS image sensor and the method for fabricating the
same according to the present invention, each color filter of the
color filter layer has a predetermined curvature for focusing
incident light. The incident light is also transmitted onto a
corresponding photodiode and filtered by the color filter layer
according to wavelength. Thus, light is transmitted without the
loss attributed to a microlens photoresist layer. This loss is
eliminated in the present invention since the color filter layer
functions as the microlens in the CMOS image sensor according to
the present invention. Therefore, light transmissivity is
improved.
[0035] In an exemplary embodiment of the present invention, the
wet-etching process of the sacrificial layer pattern forming a
predetermined curvature is used to form the same predetermined
curvature in the color filter layer. This predetermined curvature
in the color filter layer may also be realized without forming a
sacrificial layer by directly patterning the colored resist for
forming the color filter layer and then reflowing the patterned
colored resist.
[0036] By adopting the CMOS image sensor and the method for
fabricating the same according to the present invention, the
microlens layer, which engenders a loss in light transmission
energy, is not formed on the color filter layer so that a maximum
amount of light for focusing on the photodiode can be realized.
Therefore, photosensitivity of the device is improved. Thus,
accordingly to the present invention, it is unnecessary to form an
additional layer for focusing light via each color filter of the
color filter layer. Specifically, there is no requirement for
forming a microlens photoresist layer on a color filter layer.
Accordingly, any attenuation in the light energy due to the
presence of a microlens photoresist layer is avoided, and light is
transmitted with no corresponding loss attributable to such a
layer. Moreover, each of the color filters of the color filter
layer has the desired predetermined curvature without forming an
additional microlens layer, thus enabling a decrease in the overall
height of the device.
[0037] It will be apparent to those skilled in the art that various
modifications and variation can be made in the present invention
without departing from the spirit or scope of the invention. Thus,
it is intended that the present invention cover the modifications
and variations of this invention provided they come within the
scope of the appended claims and their equivalents.
* * * * *