U.S. patent application number 12/112679 was filed with the patent office on 2008-10-02 for method on forming an isolation film or a semiconductor device.
This patent application is currently assigned to HYNIX SEMICONDUCTOR INC.. Invention is credited to Young Jun Kim, Sang Wook Park, Pil Geun Song.
Application Number | 20080242046 12/112679 |
Document ID | / |
Family ID | 36971565 |
Filed Date | 2008-10-02 |
United States Patent
Application |
20080242046 |
Kind Code |
A1 |
Song; Pil Geun ; et
al. |
October 2, 2008 |
Method on Forming an Isolation Film or a Semiconductor Device
Abstract
A method of forming an isolation film in a semiconductor device
is disclosed. The disclosed method includes performing a patterning
process on a predetermined region of a semiconductor substrate in
which a patterned pad film is formed, forming a trench defining an
inactive region and an active region, forming a liner film on the
entire surface including the trench, forming an insulating film for
trench burial only within the trench, stripping the remaining liner
film formed except for the inside of the trench and the patterned
pad film formed below the liner film, forming a sacrificial film on
the entire surface, and performing a polishing process on the
entire surface in which the sacrificial film is formed until the
semiconductor substrate of the active region is exposed, thereby
forming the isolation film having no topology difference with the
semiconductor substrate of the active region.
Inventors: |
Song; Pil Geun; (Seoul,
KR) ; Kim; Young Jun; (Seoul, KR) ; Park; Sang
Wook; (Seoul, KR) |
Correspondence
Address: |
MARSHALL, GERSTEIN & BORUN LLP
233 S. WACKER DRIVE, SUITE 6300, SEARS TOWER
CHICAGO
IL
60606
US
|
Assignee: |
HYNIX SEMICONDUCTOR INC.
Icheon-Si
KR
|
Family ID: |
36971565 |
Appl. No.: |
12/112679 |
Filed: |
April 30, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11156998 |
Jun 20, 2005 |
|
|
|
12112679 |
|
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Current U.S.
Class: |
438/437 ;
257/E21.546 |
Current CPC
Class: |
H01L 21/76224
20130101 |
Class at
Publication: |
438/437 ;
257/E21.546 |
International
Class: |
H01L 21/762 20060101
H01L021/762 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 9, 2005 |
KR |
2005-19636 |
Claims
1. A method of forming an isolation film of a semiconductor device,
comprising: forming a patterned pad film comprising a pad oxide
film and a pad nitride film sequentially formed on the substrate on
a semiconductor substrate; forming a trench through the patterned
pad film defining an inactive region and an active region; forming
a liner film on the resulting structure; forming an insulating film
in the trench; stripping the liner film disposed outside of the
trench and on top of the patterned pad film leaving liner film
disposed inside the trench and in sidewalls of the pad film intact;
forming a sacrificial film on the resulting structure; and
performing a wet etch process on the resulting structure until the
semiconductor substrate of the active region is exposed, thereby
forming the isolation film having an upper surface that is coplanar
with the semiconductor substrate of the active region.
2. The method as claimed in claim 1, further comprising forming a
wall oxide film on sidewalls of the trench after the trench is
formed and before the liner film is formed.
3. The method as claimed in claim 1, wherein the liner film
comprises a nitride liner film.
4. The method as claimed in claim 1, wherein the forming the
insulating film within the trench comprises forming the insulating
film on the resulting structure on which the liner film is formed,
and then performing a polishing process until the pad film is
exposed.
5. The method as claimed in claim 1, wherein the stripping of the
liner film disposed outside of the trench and on top of the
patterned pad film further comprises stripping the liner film
formed on sidewalls of the trench to a predetermined depth while
stripping the pad film to form moats at an interface between the
inactive region and the active region.
6. The method as claimed in claim 5, wherein the sacrificial film
fills the moats formed at the interface between the inactive region
and the active region.
7. The method as claimed in claim 1, wherein the sacrificial film
is a sacrificial oxide film that is formed by a deposition method
selected from the group consisting of chemical vapor deposition
(CVD) and physical vapor deposition (PVD), or is a growth process
in an oxygen atmosphere.
8. The method as claimed in claim 1, wherein the sacrificial film
comprises a sacrificial oxide film formed by a dry oxidization
process or a wet oxidization process using H2 and O2 gas at a
pressure of about 10 Torr to about 100 Torr for about 3 hours to
about 5 hours.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a division of U.S. application Ser. No. 11/156,998
filed Jun. 20, 2005, which claims the priority benefit under 35 USC
119 of KR 2005-19636 filed Mar. 9, 2005, the entire respective
disclosures of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of Disclosure
[0003] Methods for isolation films of semiconductor devices are
shown and described.
[0004] 2. Disclosure of the Related Art
[0005] As semiconductor devices become more highly-integrated,
semiconductor manufacturing processes become more complicated.
Further, there is an urgent need for the development of isolation
film technology having good electrical properties at a small
area.
[0006] Technologies for fabricating isolation films include a
shallow trench isolation method. A pad oxide film and a pad nitride
film are first sequentially formed on a semiconductor substrate. An
isolation mask is then formed on the pad oxide film. If the pad
nitride film, the pad oxide film and the semiconductor substrate of
a predetermined thickness are etched by means of the etch process
using the isolation mask, trenches are formed in the semiconductor
substrate. An insulating film for trench burial is formed to bury
the trenches, and the top surface of the insulating film is then
polished. The pad nitride film and the pad oxide film are then
removed.
[0007] At this time, a moat is unintentionally created in which the
oxide film is located at the interface between the oxide film
burying the trenches and the semiconductor substrate, i.e., the
interface between an inactive region and an active region of the
isolation region is etched into the trenches. This makes a
subsequent process difficult and causes the leakage current of the
semiconductor substrate.
[0008] Accordingly, there is a need for technology that can improve
threshold voltage characteristics of cells by avoiding the
above-described moat phenomenon that can be generated at the
interface between an inactive region and an active region, and that
can enhance the reliability of semiconductor devices by securing
characteristics of a stabilized transistor.
BRIEF SUMMARY OF THE INVENTION
[0009] Accordingly, in view of the above problems, a method of
forming an isolation film of a semiconductor device is disclosed,
wherein threshold voltage characteristics of cells can be improved
by prohibiting the moat phenomenon that can be generated at the
interface between an inactive region and an active region, and
wherein the reliability of the resulting semiconductor devices can
be improved through secured characteristics of a stabilized
transistor by improving threshold voltage characteristics of
cells.
[0010] A disclosed method of forming an isolation film comprises:
performing a patterning process on a predetermined region of a
semiconductor substrate in which a patterned pad film is formed;
forming a trench defining an inactive region and an active region;
forming a liner film on the entire surface including the trench;
forming an insulating film for trench burial only within the
trench; stripping the remaining liner film formed except for the
inside of the trench and the patterned pad film formed below the
liner film, forming a sacrificial film on the entire surface; and
performing a polishing process on the entire surface in which the
sacrificial film is formed until the semiconductor substrate of the
active region is exposed, thereby forming the isolation film with
little or no topology difference with the semiconductor substrate
of the active region.
[0011] The pad film may be a pad nitride film.
[0012] The pad film preferably has a pad oxide film and a pad
nitride film sequentially formed on.
[0013] The disclosed method can further comprise forming a wall
oxide film on sidewalls of the trench, after the trench is
formed.
[0014] The liner film is preferably a nitride liner film.
[0015] The forming the insulating film for trench burial only
within the trench may include forming the insulating film for
trench burial on the entire surface of the semiconductor substrate
in which the liner film is formed, and then performing a polishing
process until the pad film is exposed.
[0016] The stripping of the remaining liner film formed except for
the inside of the trench and the patterned pad film may include
stripping the liner film formed on the sidewalls of the trench to a
predetermined depth, while stripping the liner film and the pad
film, whereby moats are formed at the interface between the
inactive region and the active region.
[0017] The sacrificial film is preferably formed while filling the
moats formed at the interface between the inactive region and the
active region.
[0018] The sacrificial film can be formed using a sacrificial oxide
film that is formed by means of a deposition method of the CVD mode
or PVD mode, or a sacrificial oxide film that is formed by means of
a growth process of an oxygen atmosphere.
[0019] The sacrificial oxide film may be formed by means of a dry
oxidization process or a wet oxidization process using H.sub.2 and
O.sub.2 gas at a pressure of about 10 to 100 Torr for about 3 to 5
hours.
[0020] The polishing process may be performed using one of a dry
etch process, a CMP process and a wet etch process.
[0021] The dry etch process may be performed using a gas having a
high selective ratio between the sacrificial film and the
insulating film for trench burial.
[0022] The dry etch process may be performed using a mixed gas of
CH.sub.3 gas and CF.sub.4 gas at high bias power of 200 W.
[0023] The CMP process may be performed using slurry having a high
selective ratio between the sacrificial film and the insulating
film for trench burial.
[0024] A method of forming an isolation film of a semiconductor
device comprises: the steps of providing a semiconductor substrate
in which moats are formed at the interface between an active region
and an inactive region; forming an isolation film buried with an
insulating film for trench burial in the inactive region; forming a
sacrificial film on the entire surface; and performing a polishing
process on the entire surface in which the sacrificial film is
formed until the semiconductor substrate of the active region is
exposed, thereby forming the isolation film having no topology
difference with the semiconductor substrate of the active
region.
[0025] The sacrificial film may be formed using a sacrificial oxide
film that is formed by means of a deposition method of the CVD mode
or PVD mode, or a sacrificial oxide film that is formed by means of
a growth process of an oxygen atmosphere.
[0026] The sacrificial oxide film may be formed by means of a dry
oxidization process or a wet oxidization process using H.sub.2 and
O.sub.2 gas at a pressure in the range of from about 10 to about
100 Torr for a time period in the range of from about 3 to about 5
hours.
[0027] The polishing process may be performed using one of a dry
etch process, a CMP process and a wet etch process.
[0028] The dry etch process may be performed using a gas having a
high selective ratio between the sacrificial film and the
insulating film for trench burial.
[0029] The dry etch process may be performed using a mixed gas of
CH.sub.3 gas and CF.sub.4 gas at high bias power of about 200
W.
[0030] The CMP process may be performed using slurry having a high
selective ratio between the sacrificial film and the insulating
film for trench burial.
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] FIGS. 1 to 6 are cross-sectional views explaining a
disclosed method of forming an isolation film of a semiconductor
device.
DESCRIPTION OF THE EMBODIMENTS
[0032] In the description below, when one film is described as
being "disposed on" or "on" another film or a semiconductor
substrate, the one film may directly contact the other film or the
semiconductor substrate or, one or more additional films may be
disposed between the one film and the other film or the
semiconductor substrate. Furthermore, in the drawings, the
thickness and size of each layer is not to scale and may be
exaggerated for convenience of explanation and clarity. Like
reference numerals are used to identify the same or similar
parts.
[0033] FIGS. 1 to 6 are cross-sectional views for explaining a
disclosed method of forming an isolation film of a semiconductor
device. Referring to FIG. 1, a pad oxide film 12 and a pad nitride
film 14 are sequentially formed on a semiconductor substrate 10. A
patterning process for defining an active region and an inactive
region is then performed on the semiconductor substrate 10 on which
the pad nitride film 14 is formed, thereby forming a trench in
which a predetermined region of the semiconductor substrate is
etched.
[0034] A thermal oxidization process is then performed on the
resulting structure in which the trench is formed, thus forming a
wall oxide film 16 on sidewalls of the trench. A nitride liner film
18 is then formed to a predetermined thickness along the sidewalls
on which the wall oxide film 16 is formed.
[0035] In order to fill the trench in which the wall oxide film 16
and the nitride liner film 18 are stacked, an insulating film 20 is
deposited which is a HDP oxide film having good gap-fill
characteristics and which is enough to cover the entire
semiconductor substrate, is formed.
[0036] Referring to FIG. 2, a polishing process, such as a CMP
process, is performed on the entire result in which the insulating
film 20 for trench burial is formed until the nitride liner film 18
is exposed, thereby forming an isolation film 20a. During the
polishing process, the nitride liner film formed on the pad nitride
film 14 serves as anti-polishing layer.
[0037] Referring to FIG. 3, if an etch process for stripping the
nitride liner film 18, and the pad nitride film 14 is performed, an
isolation film 20b in which the sidewalls of the trench are
recessed to a predetermined thickness is formed. In the etch
process for stripping the nitride liner film 18 and the pad nitride
film 14, the nitride liner film 18 remaining on the sidewalls of
the trench is etched to a predetermined depth while the sidewalls
of the HDP oxide film 20 is recessed to a predetermined thickness,
due to a difference in the etch selective ratio between the nitride
line film 18 and the HDP oxide film 20a being an insulating film
for trench burial, which is adjacent to the nitride liner film 18.
As a result, moats ("A" in FIG. 3) are generated at the interface
between an inactive region and an active region in which the
isolation film is formed.
[0038] Referring to FIG. 4, if an etch process for removing the pad
oxide film 12 formed below the pad nitride film 14 is performed,
the semiconductor substrate of the active region is exposed. At the
time of the process for stripping the pad oxide film 12, the
nitride liner film 18 that is etched to a predetermined depth shown
in FIG. 3 is further etched whereby the moats at the interface
between the inactive region and the active region ("B" in FIG. 4)
become deeper. That is, although the moat A whose height above the
semiconductor substrate 10 is about "a" as shown in FIG. 3, the
moat B having a similar height as that of the semiconductor
substrate 10 of FIG. 4 is formed.
[0039] Referring to FIG. 5, a sacrificial oxide film 22, preferably
a SiO.sub.2 film is formed on the entire surface from which the pad
oxide film 12 has been stripped, the film 22 will be used as a
sacrificial film in a polishing process that will be performed
subsequently. The sacrificial oxide film 22 can be formed by means
of a deposition method of the CVD mode or the PVD mode, or can be
formed by growing it on the semiconductor substrate 10 exposed by
stripping the pad oxide film and the oxide film of the isolation
film by means of a growth process of an oxygen atmosphere.
[0040] The oxide film growth process under the oxygen atmosphere
can be performed using a dry oxidization process or a wet
oxidization process using H.sub.2 and O.sub.2 gas at a pressure of
about 10 to 100 Torr for about 3 to 5 hours. The sacrificial oxide
film 22 is formed to a thickness greater than that of the isolation
film 20b, while filling the moats ("B" in FIG. 4) at the interface
between the inactive region and the active region, which are
generated due to the nitride liner film 18 etched to a
predetermined depth.
[0041] Referring to FIG. 6, if a polishing process is performed on
the entire surface in which the sacrificial oxide film 22 is formed
until the semiconductor substrate 10 of the active region is
exposed, an isolation film 20c having the same height as that of
the active region is formed.
[0042] After the polishing process is performed, the sacrificial
oxide film 22 is stripped. Thus, the height 20c of the isolation
film of the inactive region becomes the same as that of
semiconductor substrate 10 of the active region, while the
semiconductor substrate of the active region is exposed.
[0043] The polishing process can be performs using one of a dry
etch process, a CMP process and a wet etch process.
[0044] The dry etch process for performing polishing can be
performed in process conditions in which a mixed gas of CH.sub.3
gas and CF.sub.4 gas having a high selectivity ratio between the
sacrificial oxide film 22 being SiO.sub.2 and the isolation film
20b being a HDP oxide film is used, and high bias power is 200 W or
higher.
[0045] Furthermore, the CMP process for performing polishing can be
performed using a slurry having a high selectivity ratio between
the sacrificial oxide film 22 being SiO.sub.2 and the isolation
film 20b being a HDP oxide film.
[0046] As described above, after moats formed at the interface
between an active region and an inactive region are filled with a
sacrificial oxide film, the remaining sacrificial oxide film except
for the sacrificial oxide film fills in the moats is stripped by
means of a polishing process. As such, since a moat phenomenon that
can be generated at the interface between the inactive region and
the active region is avoided, threshold voltage characteristics of
a cell can be improved. If the threshold voltage characteristics of
a cell is improved, there are effects in that characteristics of a
stabilized transistor is secured and the reliability of a
semiconductor device is increased.
[0047] Furthermore, since moats formed at the interface between an
active region and an inactive region are filled with a sacrificial
oxide film, there is an effect in that bridge failure due to the
remnants generated in a subsequent process is prevented.
[0048] Although the foregoing description has been made with
reference to the preferred embodiments, it is to be understood that
changes and modifications may be made by the ordinary skilled in
the art without departing from the spirit and scope of this
disclosure and the appended claims.
* * * * *