U.S. patent application number 12/052220 was filed with the patent office on 2008-09-25 for substrate treating apparatus.
Invention is credited to Toyohide Hayashi.
Application Number | 20080230101 12/052220 |
Document ID | / |
Family ID | 39773504 |
Filed Date | 2008-09-25 |
United States Patent
Application |
20080230101 |
Kind Code |
A1 |
Hayashi; Toyohide |
September 25, 2008 |
SUBSTRATE TREATING APPARATUS
Abstract
A substrate treating apparatus for treating substrates with
treating liquids. The apparatus includes a treating tank for
storing the treating liquids, a holding mechanism for holding the
substrates and placing the substrates in a treating position inside
the treating tank, a first treating liquid supply device for
supplying a first treating liquid into the treating tank, a second
treating liquid supply device for supplying a second treating
liquid of lower surface tension than the first treating liquid, and
higher boiling point than the first treating liquid, into the
treating tank, a temperature control device for controlling
temperature of the second treating liquid in the treating tank to
be in a temperature range above the boiling point of the first
treating liquid and below the boiling point of the second treating
liquid, and a control device for controlling the second treating
liquid supply device to replace the first treating liquid supplied
from the first treating liquid supply device and stored in the
treating tank with the second treating liquid, and controlling the
temperature control device to maintain the second treating liquid
in the temperature range.
Inventors: |
Hayashi; Toyohide; (Kyoto,
JP) |
Correspondence
Address: |
OSTROLENK FABER GERB & SOFFEN
1180 AVENUE OF THE AMERICAS
NEW YORK
NY
100368403
US
|
Family ID: |
39773504 |
Appl. No.: |
12/052220 |
Filed: |
March 20, 2008 |
Current U.S.
Class: |
134/57R |
Current CPC
Class: |
H01L 21/67028 20130101;
H01L 21/67057 20130101; H01L 21/67023 20130101; B08B 3/08 20130101;
H01L 21/67051 20130101; B08B 3/048 20130101; H01L 21/67253
20130101 |
Class at
Publication: |
134/57.R |
International
Class: |
B08B 13/00 20060101
B08B013/00; B08B 3/04 20060101 B08B003/04; B08B 3/08 20060101
B08B003/08 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 23, 2007 |
JP |
2007-077170 |
Claims
1. A substrate treating apparatus for treating substrates with
treating liquids, comprising: a treating tank for storing the
treating liquids; a holding mechanism for holding the substrates
and placing the substrates in a treating position inside said
treating tank; a first treating liquid supply device for supplying
a first treating liquid into said treating tank; a second treating
liquid supply device for supplying a second treating liquid of
lower surface tension than the first treating liquid and higher
boiling point than the first treating liquid, into said treating
tank; a temperature control device for controlling temperature of
the second treating liquid in said treating tank to be in a
temperature range above the boiling point of the first treating
liquid and below the boiling point of the second treating liquid;
and a control device for controlling said second treating liquid
supply device to replace the first treating liquid supplied from
said first treating liquid supply device and stored in said
treating tank with the second treating liquid, and controlling said
temperature control device to maintain the second treating liquid
in said temperature range.
2. An apparatus as defined in claim 1, further comprising a third
treating liquid supply device for supplying a third treating liquid
of lower surface tension than the first treating liquid, and lower
boiling point than the second treating liquid, into said treating
tank; wherein said holding mechanism is vertically movable, while
holding the substrates, between the treating position inside said
treating tank and a standby position above said treating tank; and
wherein said control device is arranged to control said third
treating liquid supply device to replace the second treating liquid
stored in said treating tank with the third treating liquid after
substrate treatment with the second treating liquid maintained in
said temperature range, and to control said holding mechanism to
raise the substrates to the standby position after replacement with
the third treating liquid inside said treating tank.
3. An apparatus as defined in claim 1, further comprising a thermal
drying device for drying the substrates having undergone treatment
with the second treating liquid in a hot atmosphere; wherein said
control device is arranged to control said thermal drying device to
dry the substrates in the hot atmosphere after treatment with the
second treating liquid maintained in said temperature range.
4. An apparatus as defined in claim 1, further comprising an air
drying device for drying, by air contact, the substrates having
undergone treatment with the second treating liquid; wherein said
control device is arranged to control said air drying device to dry
the substrates by air contact after treatment with the second
treating liquid maintained in said temperature range.
5. An apparatus as defined in claim 1, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
6. An apparatus as defined in claim 2, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
7. An apparatus as defined in claim 3, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
8. An apparatus as defined in claim 4, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
9. An apparatus as defined in claim 1, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
10. An apparatus as defined in claim 2, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
11. An apparatus as defined in claim 3, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
12. An apparatus as defined in claim 4, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
13. An apparatus as defined in claim 2, wherein the first treating
liquid is deionized water, and the second treating liquid and the
third treating liquids are fluoric inactive liquids having surface
tension equal to or less than 0.02 [N/m].
14. A substrate treating apparatus for treating substrates with
treating liquids, comprising: a treating unit having a spin holding
mechanism disposed therein for spinnably holding a substrate in
horizontal posture, said treating unit treating the substrate held
by said spin holding mechanism with the treating liquids; a first
treating liquid supply device for supplying a first treating liquid
to the substrate spun by said spin holding mechanism inside said
treating unit; a second treating liquid supply device for supplying
a second treating liquid of lower surface tension than the first
treating liquid, and higher boiling point than the first treating
liquid, to the substrate spun by said spin holding mechanism inside
said treating unit; a temperature control device for controlling
temperature of the second treating liquid supplied to the substrate
spun by said spin holding mechanism inside said treating unit to be
in a temperature range above the boiling point of the first
treating liquid and below the boiling point of the second treating
liquid; and a control device for controlling said temperature
control device said second treating liquid supply device to supply
the second treating liquid in said temperature range to the
substrate spun by said spin holding mechanism inside said treating
unit after treatment of the substrate with the first treating
liquid.
15. An apparatus as defined in claim 14, further comprising a third
treating liquid supply device for supplying a third treating liquid
of lower surface tension than the first treating liquid, and lower
boiling point than the second treating liquid, to the substrate
spun by said spin holding mechanism inside said treating unit;
wherein said control device is arranged to control said third
treating liquid supply device to supply the third treating liquid
to the substrate spun by said spin holding mechanism inside said
treating unit after substrate treatment with the second treating
liquid maintained in said temperature range, and to control said
spin holding mechanism to spin the substrates after completion of
supply of the third treating liquid to the substrate.
16. An apparatus as defined in claim 14, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
17. An apparatus as defined in claim 15, wherein the first treating
liquid is deionized water, and the second treating liquid has
surface tension equal to or less than 0.02 [N/m].
18. An apparatus as defined in claim 14, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
19. An apparatus as defined in claim 15, wherein the first treating
liquid is deionized water, and the second treating liquid is a
fluoric inactive liquid.
20. An apparatus as defined in claim 15, wherein the first treating
liquid is deionized water, and the second treating liquid and the
third treating liquids are fluoric inactive liquids having surface
tension equal to or less than 0.02 [N/m].
Description
BACKGROUND OF THE INVENTION
[0001] (1) Field of the Invention
[0002] This invention relates to a substrate treating apparatus for
treating, e.g. cleaning, substrates such as semiconductor wafers or
glass substrates for liquid crystal displays (hereinafter called
simply substrates) with treating liquids such as a chemical
solution and deionized water.
[0003] (2) Description of the Related Art
[0004] Conventionally, this type of apparatus includes, for
example, a treating tank for storing a treating liquid and
receiving substrates, and a nozzle for supplying isopropyl alcohol
(IPA) gas to an upper space in the treating tank (see Japanese
Unexamined Patent Publication H10-22257 (paragraphs "0024" and
"0025", and FIG. 3), for example). With this apparatus, after
supplying deionized water to the treating tank and cleaning
substrates, IPA gas is supplied to the upper space in the treating
tank to form an IPA atmosphere therein. Then, the substrates are
pulled up from the treating tank to complete cleaning treatment of
the substrates with deionized water. By pulling up and moving the
substrates in the IPA atmosphere, the deionized water adhering to
the substrates is replaced with IPA to promote drying of the
substrates.
[0005] The conventional apparatus with such construction has the
following drawback.
[0006] The conventional apparatus can promote drying by pulling up
the substrates cleaned with deionized water out of the deionized
water, and moving the substrates in the IPA atmosphere. However,
there is a drawback that the pattern formed on the surface of each
substrate can collapse. That is, the pattern on the substrate
surface collapses due to the surface tension of the deionized water
on the substrate pulled up.
[0007] In the latest semiconductor devices, particularly in the
field of memory, capacitors constructed in a cylindrical shape have
begun to be employed as a technique for drastically increasing the
degree of integration. Such a cylindrical structure has a very high
aspect ratio, and a capacitor portion of cylindrical structure
collapses easily during a manufacture process. Naturally, a
collapse of the capacitor portion renders the device defective, and
thus lowers yield.
[0008] It is conceivable to reduce the chances of collapse of the
pattern by replacing the deionized water in the treating tank with
a liquid with low surface tension, after the substrate cleaning
with the deionized water in the treating tank noted above, and then
pulling up the substrates from the treating tank and drying the
substrates. However, the deionized water having entered minutia of
the patterns on the substrate surfaces can remain without being
fully replaced. It is thus impossible to eliminate collapse of the
patterns formed on the substrates completely.
SUMMARY OF THE INVENTION
[0009] This invention has been made having regard to the state of
the art noted above, and its object is to provide a substrate
treating apparatus which can prevent collapse of patterns formed on
substrates.
[0010] The above object is fulfilled, according to this invention,
by a substrate treating apparatus for treating substrates with
treating liquids, comprising a treating tank for storing the
treating liquids; a holding mechanism for holding the substrates
and placing the substrates in a treating position inside the
treating tank; a first treating liquid supply device for supplying
a first treating liquid into the treating tank; a second treating
liquid supply device for supplying a second treating liquid of
lower surface tension than the first treating liquid, and higher
boiling point than the first treating liquid, into the treating
tank; a temperature control device for controlling temperature of
the second treating liquid in the treating tank to be in a
temperature range above the boiling point of the first treating
liquid and below the boiling point of the second treating liquid;
and a control device for controlling the second treating liquid
supply device to replace the first treating liquid supplied from
the first treating liquid supply device and stored in the treating
tank with the second treating liquid, and controlling the
temperature control device to maintain the second treating liquid
in the temperature range.
[0011] The substrates are placed in the treating position inside
the treating tank by the holding mechanism. The substrates inside
the treating tank are treated with the first treating liquid. Then,
the control device controls the second treating solution supply
device to replace the first treating liquid stored in the treating
tank with the second treating liquid, and controls the temperature
control device to maintain the second treating liquid in the
temperature range above the boiling point of the first treating
liquid and below the boiling point of the second treating liquid.
Therefore, the substrates treated with the first treating liquid in
the treating tank are immersed in the second treating liquid
controlled to a temperature higher than the boiling point of the
first treating liquid. The first treating liquid remaining on the
surfaces of the substrates (including the first treating liquid
having entered and remaining in minutia of the patterns on the
surfaces of the substrates) is evaporated by the thermal energy of
the hot second treating liquid. Its bubbles ascend to the surface
of the second treating liquid in the treating tank, and leave the
treating tank in the form of vapor. Thus, the first treating liquid
having entered and remaining in minutia of the patterns on the
surfaces of the substrates can be completely replaced with the
second treating liquid. The substrates taken out of the treating
tank do not pass through an interface of the first treating liquid
having high surface tension, but pass only through an interface of
the second treating liquid having lower surface tension than the
first treating liquid. Only the low surface tension acts on the
surfaces of the substrates when passing through the interface of
the second treating liquid, thereby preventing collapse of the
patterns formed on the substrates. Only the second treating liquid
with the low surface tension remains on the surfaces of the
substrates pulled up. The surfaces of the substrates are subjected
to the low surface tension when drying the second treating liquid,
which prevents collapse of the patterns formed on the
substrates.
[0012] The apparatus according to this invention may further
comprise a third treating liquid supply device for supplying a
third treating liquid of lower surface tension than the first
treating liquid, and lower boiling point than the second treating
liquid, into the treating tank; wherein the holding mechanism is
vertically movable, while holding the substrates, between the
treating position inside the treating tank and a standby position
above the treating tank; and wherein the control device is arranged
to control the third treating liquid supply device to replace the
second treating liquid stored in the treating tank with the third
treating liquid after substrate treatment with the second treating
liquid maintained in the temperature range, and to control the
holding mechanism to raise the substrates to the standby position
after replacement with the third treating liquid inside the
treating tank.
[0013] The substrates are pulled up and dried after the second
treating liquid stored in the treating tank is replaced with the
third treating liquid of lower surface tension than the first
treating liquid and lower boiling point than the second treating
liquid. This requires a shorter drying time than where the
substrates are pulled up out of the second treating liquid. That
is, the third treating liquid allows the substrates to dry more
quickly than the second treating liquid because of the lower
boiling point.
[0014] The apparatus according to this invention may further
comprise a thermal drying device for drying the substrates having
undergone treatment with the second treating liquid in a hot
atmosphere; wherein the control device is arranged to control the
thermal drying device to dry the substrates in the hot atmosphere
after treatment with the second treating liquid maintained in the
temperature range.
[0015] The treatment with the second treating liquid under
temperature control evaporates and removes the first treating
liquid having entered and remaining in minutia of the patterns on
the surfaces of the substrates. Thus, the second treating liquid on
the surfaces of the substrates and having low surface tension can
be dried in the hot atmosphere, thereby preventing collapse of the
patterns formed on the substrates.
[0016] The apparatus according to this invention may further
comprise an air drying device for drying, by air contact, the
substrates having undergone treatment with the second treating
liquid; wherein the control device is arranged to control the air
drying device to dry the substrates by air contact after treatment
with the second treating liquid maintained in the temperature
range.
[0017] The treatment with the second treating liquid under
temperature control evaporates and removes the first treating
liquid having entered and remaining in minutia of the patterns on
the surfaces of the substrates. Thus, the second treating liquid on
the surfaces of the substrates and having low surface tension can
be dried by air contact, thereby preventing collapse of the
patterns formed on the substrates.
[0018] In another aspect of the invention, a substrate treating
apparatus for treating substrates with treating liquids comprises a
treating unit having a spin holding mechanism disposed therein for
spinnably holding a substrate in horizontal posture, the treating
unit treating the substrate held by the spin holding mechanism with
the treating liquids; a first treating liquid supply device for
supplying a first treating liquid to the substrate spun by the spin
holding mechanism inside the treating unit; a second treating
liquid supply device for supplying a second treating liquid of
lower surface tension than the first treating liquid, and higher
boiling point than the first treating liquid, to the substrate spun
by the spin holding mechanism inside the treating unit; a
temperature control device for controlling temperature of the
second treating liquid supplied to the substrate spun by the spin
holding mechanism inside the treating unit to be in a temperature
range above the boiling point of the first treating liquid and
below the boiling point of the second treating liquid; and a
control device for controlling the temperature control device the
second treating liquid supply device to supply the second treating
liquid in the temperature range to the substrate spun by the spin
holding mechanism inside the treating unit after treatment of the
substrate with the first treating liquid.
[0019] The first treating liquid is supplied to the substrate
spinnably held by the spin holding mechanism inside the treating
unit to carry out treatment with the first treating liquid. Then,
the control device controls the temperature control device and
second treating solution supply device, after the treatment of the
substrate with the first treating liquid, to supply the second
treating liquid in the temperature range above the boiling point of
the first treating liquid and below the boiling point of the second
treating liquid to the substrate spun by the spin holding mechanism
inside the treating unit. Thus, the second treating liquid
controlled to a temperature higher than the boiling point of the
first treating liquid is supplied to the substrate treated with the
first treating liquid in the treating unit. The first treating
liquid remaining on the surface of the substrate (including the
first treating liquid having entered and remaining in minutia of
the pattern on the surface of the substrate) is evaporated by the
thermal energy of the hot second treating liquid to leave the
surface of the substrate and exit the treating unit in the form of
vapor. Thus, the first treating liquid having entered and remaining
in minutia of the pattern on the surface of the substrate can be
completely replaced with the second treating liquid. Only the
second treating liquid with the low surface tension remains on the
surface of the substrate. The surface of the substrate is subjected
to the low surface tension when drying the second treating liquid,
which prevents collapse of the pattern formed on the substrate.
[0020] The above apparatus may further comprise a third treating
liquid supply device for supplying a third treating liquid of lower
surface tension than the first treating liquid, and lower boiling
point than the second treating liquid, to the substrate spun by the
spin holding mechanism inside the treating unit; wherein the
control device is arranged to control the third treating liquid
supply device to supply the third treating liquid to the substrate
spun by the spin holding mechanism inside the treating unit after
substrate treatment with the second treating liquid maintained in
the temperature range, and to control the spin holding mechanism to
spin the substrates after completion of supply of the third
treating liquid to the substrate.
[0021] The substrate is spin-dried after the second treating liquid
on the surface of the substrate is replaced with the third treating
liquid of lower surface tension than the first treating liquid and
lower boiling point than the second treating liquid. This requires
a shorter drying time than where the substrate is spin-dried with
the second treating liquid remaining thereon. That is, the third
treating liquid allows the substrates to dry more quickly than the
second treating liquid because of the lower boiling point.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] For the purpose of illustrating the invention, there are
shown in the drawings several forms which are presently preferred,
it being understood, however, that the invention is not limited to
the precise arrangement and instrumentalities shown.
[0023] FIG. 1 is a schematic view of a substrate treating apparatus
in Embodiment 1;
[0024] FIGS. 2A-2D are schematic views showing an example of
treatment in Embodiment 1;
[0025] FIG. 3 is a schematic view of a drying apparatus which is a
substrate treating apparatus in Embodiment 2;
[0026] FIGS. 4A-4D are schematic views showing an example of
treatment in Embodiment 2;
[0027] FIG. 5 is a schematic view of a substrate treating apparatus
in Embodiment 3;
[0028] FIGS. 6A-6E are schematic views showing an example of
treatment in Embodiment 3; and
[0029] FIGS. 7A-76E are schematic views showing a modified example
of treatment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0030] Embodiments of this invention will be described in detail
hereinafter with reference to the drawings.
Embodiment 1
[0031] FIG. 1 is a schematic view of a substrate treating apparatus
in Embodiment 1.
[0032] A treating tank 1 includes an inner tank 3 and an outer tank
5. The inner tank 3 stores a treating liquid or solution, and can
receive wafers W held by a holding arm 7. A plurality of wafers W
are arranged in vertical posture on the holding arm 7 to be loaded
into and unloaded from the apparatus. The holding arm 7 includes a
plate-like arm portion 9, and three support elements 11 arranged on
lower positions of the arm portion 9 to extend perpendicular to the
arm portion 9 for contacting lower edges of the wafers W and
supporting the wafers W. The holding arm 7 is vertically movable,
while holding the wafers W, between a treating position inside the
inner tank 3 and a standby position above the inner tank 3. The
inner tank 3 stores a treating liquid or solution, and the treating
liquid overflowing the inner tank 3 is collected in the outer tank
5 surrounding an upper portion of the inner tank 3. The inner tank
3 has two jet pipes 13 disposed at opposite sides in the bottom
thereof for supplying the treating liquid into the inner tank 3.
The outer tank 5 has a drain port 15 formed in the bottom thereof.
The treating liquid overflowing the inner tank 3 into the outer
tank 5 is drained through the drain port 15.
[0033] The jet pipes 13 are connected to one end of a supply pipe
17 having the other end connected to a deionized water source 19.
The supply pipe 17 has a control valve 21 disposed downstream of
the deionized water source 19 for controlling flow rate. The supply
pipe 17 has a mixing valve 23 disposed downstream of the control
valve 21. The mixing valve 23 has a function for mixing a chemical
into deionized water flowing through the supply pipe 17. The mixing
valve 23 is connected to one end of a filling pipe 25 having the
other end connected to a chemical source 27. The filling pipe 25
has a control valve 29 disposed down-stream of the chemical source
27 for controlling flow rate. Generally, two or more types of
chemicals can be introduced into the mixing valve 23, but this is
not illustrated in this embodiment. In this embodiment, hydrogen
fluoride (HF) is mixed in a predetermined ratio into the deionized
water in circulation, for example, to produce and supply a chemical
solution as a treating solution for removing oxide film from the
substrate surfaces. It is also possible to mix ammonia and a
hydrogen peroxide solution in predetermined ratios into the
deionized water in circulation to produce and supply a chemical
solution as a treating solution for removing particles or organic
matters (this process being called "SC1").
[0034] The holding arm 7 noted above corresponds to the holding
mechanism in this invention.
[0035] One end of each of branch pipes 31 and 32 is connected to
the supply pipe 17 between the control valve 21 and mixing valve
23. A first solution source 34 is connected to the other end of the
branch pipe 31. A second solution source 35 is connected to the
other end of the branch pipe 32. The branch pipes 31 and 32 have
control valves 37 and 38 for adjusting flow rates,
respectively.
[0036] The first solution source 34 stores a first low surface
tension solution, for example. The first low surface tension
solution refers to a solution of lower surface tension than
deionized water, and higher boiling point than deionized water.
This solution may, for example, be a fluoric inactive solution such
as Fluorinert (registered trademark of Sumitomo 3M Ltd.) or Galden
(registered trademark of Solvay Solexis). Fluorinert (registered
trademark of Sumitomo 3M Ltd.) and Galden (registered trademark of
Solvay Solexis) have surface tension at about 0.014-0.016 [N/m] and
a boiling point at 130-180 [.degree. C.].
[0037] The second solution source 35 stores a second low surface
tension solution, for example. The second low surface tension
solution refers to a solution of lower surface tension than
deionized water, and lower boiling point than the first low surface
tension solution. This solution may, for example, be a fluoric
inactive solution such as of HFE (hydrofluoroether) or HFC
(hydrofluorocarbon). HFE (hydrofluoroether) has surface tension at
about 0.0136 [N/m] and a boiling point at 60-80 [.degree. C.].
[0038] The jet pipes 13, supply pipe 17 and control valve 21
correspond to the first treating solution supply device in this
invention. The jet pipes 13, supply pipe 17, branch pipe 31 and
control valve 37 correspond to the second treating solution supply
device in this invention. The jet pipes 13, supply pipe 17, branch
pipe 32 and control valve 38 correspond to the third treating
solution supply device in this invention.
[0039] The branch pipe 31 has an in-line heater 33 for controlling
temperature of the first low surface tension solution in the
treating tank 1 to be in a temperature range between the boiling
point of deionized water and the boiling point of the first low
surface tension solution. The in-line heater 33 heats the first low
surface tension solution flowing through the branch pipe 31 to a
range of 115-200.degree. C., for example. The first low surface
tension solution even at 115.degree. C. can evaporate deionized
water. It is preferred to heat the first low surface tension
solution to a range of 130-200.degree. C. In this case, deionized
water can be evaporated more effectively. In this embodiment, the
in-line heater 33 heats the first low surface tension solution
flowing through the branch pipe 31 to a range of 150-200.degree. C.
In this case, deionized water can be evaporated still more
effectively.
[0040] The inner tank 3 has a temperature detector 36 (e.g.
temperature detecting sensor) mounted inside for detecting
temperature of the first low surface tension solution. The
temperature detected of the first low surface tension solution in
the inner tank 3 is outputted to a controller 47. Based on the
detected temperature, the controller 47 controls the heating
temperature of the in-line heater 33 to maintain the temperature of
the first low surface tension solution in the inner tank 3 in the
range of 150-200.degree. C.
[0041] The above arrangement may be modified to omit the
temperature detector 36 from the inner tank 3, and use an in-line
heater having a temperature control function as in-line heater 33.
Then, the first low surface tension solution may be supplied in the
range of 150-200.degree. C. and in a sufficient quantity to replace
the deionized water in the inner tank 3.
[0042] The above in-line heater 33 corresponds to the temperature
control device in this invention. The deionized water corresponds
to the first treating liquid in this invention. The first low
surface tension solution corresponds to the second treating liquid
in this invention. The second low surface tension solution
corresponds to the third treating liquid in this invention.
[0043] The inner tank 3 has a discharge opening 41 formed in the
bottom thereof, to which one end of a drain pipe 43 is connected.
The other end of the drain pipe 43 is connected to a waste liquid
disposal unit not shown. The drain pipe 43 has a flow control valve
45 for adjusting a flow rate therethrough.
[0044] The controller 47 performs an overall control of the
apparatus including the vertical movement of the holding arm 7 and
operations of the in-line heater 33 and control valves 21, 29, 37,
38 and 45. The controller 47 has a memory storing a recipe
specifying procedures, a microprocessor and a counter/timer.
[0045] The above controller 47 corresponds to the control device in
this invention.
[0046] Next, operation of the apparatus having the above
construction will be described. Assume that the wafers W as held by
the holding arm 7 have been moved to the treating position inside
the inner tank 1. The holding arm 7 is omitted from FIG. 2 referred
to hereinafter.
[0047] Treating operation in Embodiment 1 will be described with
reference to FIG. 2. FIGS. 2A-2D are schematic views showing an
example of treatment in Embodiment 1. In Embodiment 1, for example,
treatment is carried out while producing the above-noted chemical
solution of HF as treating solution, and thereafter the wafers W
are cleaned with the other liquid and solutions and are then pulled
up.
[0048] Specifically, the controller 47 operates the control valves
21 and 29 to supply the chemical solution at a predetermined flow
rate (FIG. 2A). This state is maintained for a predetermined time
to carry out chemical treatment of the wafers W.
[0049] Next, the controller 47 closes the control valve 29 to stop
the supply of the chemical solution, while keeping the control
valve 21 open to continue supplying the deionized water. As a
result, cleaning treatment only with the deionized water is
performed (FIG. 2B).
[0050] At this time, the controller 47 may open the control valve
45 of the drain pipe 43 connected to the discharge opening 41 in
the bottom of the inner tank 3. Thus, the deionized water may be
supplied into the inner tank 3 after discharging at once or while
discharging the chemical solution from the inner tank 3.
[0051] After a predetermined time of cleaning treatment with the
deionized water, the controller 47 closes the control valve 21 to
stop the supply of deionized water, and opens the control valve 37
to supply Fluorinert (registered trademark of Sumitomo 3M Ltd.),
which is the first low surface tension solution, at a predetermined
flow rate from the first solution source 34 to the treating tank 1.
At this time, the in-line heater 33 heats the first low surface
tension solution to the range of 150-200.degree. C. This state is
maintained for a predetermined time to replace the deionized water
stored in the inner tank 3 with the first low surface tension
solution in the range of 150-200.degree. C. (FIG. 2C). After the
replacement with the first low surface tension solution is
completed, this state is maintained for a predetermined time. As
noted hereinbefore, the controller 47 performs heating control of
the in-line heater 33 based on the temperature of the first low
surface tension solution detected by the temperature detector
36.
[0052] As shown in FIG. 2C, the wafers W are immersed for a
predetermined time in the hot (130-200.degree. C.) first low
surface tension solution filling the treating tank 1. The deionized
water remaining on the surfaces of wafers W is evaporated by the
thermal energy of the hot first low surface tension solution. Its
bubbles ascend to the surface of the first low surface tension
solution in the treating tank 1, and leave the treating tank 1 in
the form of vapor. Even part of the deionized water having entered
and remaining in minutia of the patterns on the surfaces of wafers
W is evaporated by the thermal energy of the hot first low surface
tension solution. Again, its bubbles ascend to the surface of the
first low surface tension solution in the treating tank 1, and
leave the treating tank 1 in the form of vapor.
[0053] The vapor coming out of the treating tank 1 is exhausted by
an exhaust mechanism 39 disposed above the treating tank 1.
[0054] A completion time for the replacement with the first low
surface tension solution is determined by the controller 47, for
example, from the capacity of the inner tank 3 which is known, and
the flow rate of the first low surface tension solution
supplied.
[0055] After the replacement with the first low surface tension
solution, the controller 47 causes the hydrofluoroether (HFE) to be
supplied as the second low surface tension solution at a
predetermined flow rate. This is continued for a predetermined time
to replace the first low surface tension solution stored in the
inner tank 3 with the second low surface tension solution (FIG.
2D). When the replacement of the chemical solution with the second
low surface tension solution is completed, the controller 47 pulls
up the wafers W from the inner tank 3 to be unloaded from the
apparatus (FIG. 2D).
[0056] At this time, the controller 47 may open the control valve
45 of the drain pipe 43 connected to the discharge opening 41 in
the bottom of the inner tank 3. Thus, the second low surface
tension solution may be supplied into the inner tank 3 after
discharging at once or while discharging the first low surface
tension solution from the inner tank 3.
[0057] A completion time for the replacement with the second low
surface tension solution is determined by the controller 47, for
example, from the capacity of the inner tank 3 which is known, and
the flow rate of the second low surface tension solution
supplied.
[0058] According to Embodiment 1, as described above, the
controller 47 controls the control valve 37 to replace the
deionized water stored in the treating tank 1 with the first low
surface tension solution, and controls the in-line heater 33 to
maintain the first low surface tension solution in the treating
tank 1 in the temperature range above the boiling point of
deionized water and below the boiling point of the first low
surface tension solution. Therefore, the wafers W treated with the
deionized water in the treating tank 1 are immersed in the first
low surface tension solution controlled to a temperature higher
than the boiling point of deionized water. The deionized water
remaining on the surfaces of wafers W (including the deionized
water having entered and remaining in minutia of the patterns on
the surfaces of wafers W) is evaporated by the thermal energy of
the hot first low surface tension solution. Its bubbles ascend to
the surface of the first low surface tension solution in the
treating tank 1, and leave the treating tank 1 in the form of
vapor. Thus, the deionized water having entered and remaining in
minutia of the patterns on the surfaces of wafers W can be
completely replaced with the first low surface tension solution.
The wafers W taken out of the treating tank 1 do not pass through
the interface of deionized water having high surface tension, but
pass only through an interface IF of the second low surface tension
solution of lower surface tension than deionized water (see FIG.
2D). Only the low surface tension acts on the surfaces of wafers W
when passing through the interface IF of the second low surface
tension solution, thereby preventing collapse of the patterns
formed on the wafers W. Only the first low surface tension solution
with the low surface tension remains on the surfaces of wafers W
pulled up. The surfaces of wafers W are subjected to the low
surface tension when drying the first low surface tension solution,
which prevents collapse of the patterns formed on the wafers W.
[0059] The first low surface tension solution stored in the
treating tank 1 is replaced with the second low surface tension
solution of lower surface tension than deionized water and lower
boiling point than the first low surface tension solution, and then
the wafers W are pulled up and dried. This requires a shorter
drying time than where the wafers W are pulled up out of the first
low surface tension solution. That is, the second low surface
tension solution allows the wafers W to dry more quickly than the
first low surface tension solution because of the lower boiling
point.
[0060] The boiling point of deionized water is 100.degree. C., and
the first low surface tension solution is a fluoric inactive liquid
having low surface tension and a sufficiently higher boiling point
than deionized water. Thus, the first low surface tension solution
can assure a good distillation selection ratio with deionized water
to evaporate deionized water effectively.
[0061] Since both the first low surface tension solution and second
low surface tension solution are fluoric inactive liquids, the
first low surface tension solution is easily replaceable with the
second low surface tension solution. Thus, the replacement with the
second low surface tension solution can be carried out in a reduced
time to shorten the drying time.
Embodiment 2
[0062] Next, Embodiment 2 of this invention will be described with
reference to FIGS. 3 and 4.
[0063] FIG. 3 is a schematic view of a drying apparatus which is a
substrate treating apparatus in Embodiment 2. FIGS. 4A-4D are
schematic views showing an example of treatment in Embodiment 2.
Like reference numerals are used to identify like parts which are
the same as in Embodiment 1 and will not particularly be
described.
[0064] In Embodiment 1 described above, as shown in FIG. 2, the
single treating tank 1 is used for the chemical treatment,
deionized water cleaning treatment, replacement with the first low
surface tension solution, replacement with the second low surface
tension solution, and pull-up and drying treatment. Embodiment 2 is
different from Embodiment 1 in that, as shown in FIG. 4, the
replacement with the second low surface tension solution is now
abolished and, in place of the pull-up and drying, a construction
is employed for carrying out spin-drying (heater plus spin-drying)
in a hot atmosphere.
[0065] After wafers W are immersed in the hot first low surface
tension solution as in Embodiment 1 (FIG. 4C), each wafer W is
transported by a substrate transport mechanism, not shown, into a
drying chamber (FIG. 4D). Each wafer W is dried in this drying
chamber.
[0066] The drying chamber has a thermal drying function to dry in a
hot atmosphere the wafers W treated with the first low surface
tension solution, and an air drying function to dry the wafers W
through contact with air.
[0067] Specifically, as shown in FIG. 3, a drying chamber 49 is a
drying chamber of what is called the single-substrate type for
treating one wafer W at a time. The drying chamber 49 includes a
chuck 51 (holding mechanism) for supporting a wafer W in horizontal
posture, a rotary shaft 53 connected to the lower end of the chuck
51, a motor 55 (actuator) for rotating the rotary shaft 53, and a
scatter preventive cup 57 surrounding the chuck 51. The scatter
preventive cup 57 collects the first low surface tension solution
scattering from the wafer W, and is vertically movable relative to
the chuck 51.
[0068] The drying chamber 49 has an inlet port 59 formed in a
predetermined position thereof to which one end of a gas feed pipe
61 is connected. The other end of the gas feed pipe 61 is connected
to a gas source 63. The gas feed pipe 61 has a control valve 65 and
an in-line heater 67 arranged in order from upstream to downstream
thereon.
[0069] After the treatment with the first low surface tension
solution maintained in the temperature range noted in Embodiment 1,
the controller 47 controls the drying chamber 49 to dry each wafer
W in the hot atmosphere, and spins the chuck 51 to dry the wafer W
through contact with air.
[0070] Specifically, as shown in FIGS. 3 and 4D, the controller 47
opens the control valve 65 to supply a gas (e.g. nitrogen gas) from
the gas source 63, and heat the gas with the in-line heater 67. The
nitrogen gas is supplied at a predetermined temperature into the
drying chamber 49. When the drying chamber 49 is filled with a hot
atmosphere, the wafer W is spun by the chuck 51 to dry and remove
the first low surface tension solution remaining on the surface of
wafer W.
[0071] According to Embodiment 2, as described above, the drying
chamber 49 is provided for drying in a hot atmosphere each wafer W
treated with the first low surface tension solution, and
spin-drying the wafer W. After the treatment with the first low
surface tension solution, the controller 47 controls the drying
chamber 49 to dry each wafer W in the hot atmosphere and by
spinning the wafer W. The deionized water having entered and
remaining in minutia of the patterns on the surfaces of wafers W is
evaporated and removed through the treatment with the first low
surface tension solution. The first low surface tension solution
having low surface tension and remaining on the surface of each W
can be dried effectively by spinning the wafer W in the hot
atmosphere, thereby preventing collapse of the pattern formed on
the wafer W.
[0072] The wafers W taken out of the treating tank 1 do not pass
through the interface of deionized water having high surface
tension, but pass only through an interface IF of the first low
surface tension solution having a lower surface tension than
deionized water (see FIG. 4C). Only the lower surface tension acts
on the surfaces of wafers W when passing through the interface IF
of the first low surface tension solution, thereby preventing
collapse of the patterns formed on the wafers W.
Embodiment 3
[0073] Next, Embodiment 3 of this invention will be described with
reference to FIGS. 5 and 6.
[0074] FIG. 5 is a schematic view of a substrate treating apparatus
in Embodiment 3. FIGS. 6A-6E are schematic views showing an example
of treatment in Embodiment 3. Like reference numerals are used to
identify like parts which are the same as in Embodiment 1 and will
not particularly be described.
[0075] Embodiment 1 described hereinbefore, as shown in FIG. 2,
provides a batch type construction where the single treating tank 1
is used for the chemical treatment, deionized water cleaning
treatment, replacement with the first low surface tension solution,
replacement with the second low surface tension solution, and
pull-up and drying treatment. Embodiment 3 is different from
Embodiment 1 in that, as shown in FIGS. 5 and 6, a single-substrate
type construction is employed for carrying out chemical treatment,
deionized water cleaning treatment, replacement with the first low
surface tension solution, replacement with the second low surface
tension solution, and drying treatment.
[0076] As shown in FIG. 5, the apparatus in Embodiment 3 includes a
chemical treating chamber 71, a cleaning chamber 101 separate from
the chemical treating chamber 71, and a transport mechanism 91 for
transporting wafers W having undergone chemical treatment in the
chemical treating chamber 71 to the cleaning chamber 101.
[0077] As shown in FIG. 5, the chemical treating chamber 71 is a
treating chamber of what is called the single-substrate type for
treating one wafer W at a time. Specifically, the chemical treating
chamber 71 includes a nozzle 73, a pipe 75 having one end thereof
connected to the nozzle 73, a chemical source 77 connected to the
other end of the pipe 75, and a control valve 79 mounted in an
intermediate position on the pipe 75.
[0078] The chemical treating chamber 71 further includes a chuck
(holding mechanism) 81 for supporting a wafer W in horizontal
posture, a rotary shaft 83 connected to the lower end of the chuck
81, a motor 85 (actuator) for rotating the rotary shaft 83, and a
scatter preventive cup 87 surrounding the chuck 81. The scatter
preventive cup 87 collects the first low surface tension solution
scattering from the wafer W, and is vertically movable relative to
the chuck 81.
[0079] The transport mechanism 91 has an arm 93. The arm 93 is
driven, with the scatter preventive cup 87 of the chemical treating
chamber 71 lowered (i.e. in a retracted state), to receive the
wafer W from the chuck 81 as placed on the arm 93. Then, the arm 93
is swung in a horizontal plane toward the cleaning chamber 101 and,
with a scatter preventive cup 127 of the cleaning chamber 101
lowered (i.e. in a retracted state), places the wafer W on a chuck
121.
[0080] As shown in FIG. 5, the cleaning chamber 101 is a cleaning
chamber of what is called the single-substrate type for treating
one wafer W at a time. Specifically, the cleaning chamber 101
includes a nozzle 103, a pipe 105 having one end thereof connected
to the nozzle 103, a deionized water source 107 connected to the
other end of the pipe 105, and a control valve 109 mounted in an
intermediate position on the pipe 105. The pipe 105 has one end of
each of branch pipes 111 and 112 connected thereto. A first
solution source 114 is connected to the other end of the branch
pipe 111. A second solution source 115 is connected to the other
end of the branch pipe 112. The branch pipes 111 and 112 have
control valves 117 and 118 mounted thereon for controlling flow
rates therethrough, respectively.
[0081] The cleaning chamber 101 has the chuck (holding mechanism)
121 for supporting the wafer W in horizontal posture, a rotary
shaft 123 connected to the lower end of the chuck 121, a motor
(actuator) 125 for rotating the rotary shaft 123, and the scatter
preventive cup 127 surrounding the chuck 121. The scatter
preventive cup 127 collects deionized water, a first low surface
tension solution and a second low surface tension solution
scattering from the wafer W. The scatter preventive cup 127 is
vertically movable relative to the chuck 121.
[0082] The branch pipe 111 has an in-line heater 119 for
controlling temperature of the first low surface tension solution
supplied to the wafer W to be in a temperature range between the
boiling point of deionized water and the boiling point of the first
low surface tension solution. The in-line heater 119 has a
temperature control function for providing a temperature range of
115-200.degree. C. based on a temperature command from a controller
129 to be described hereinafter. The in-line heater 33 heats the
first low surface tension solution flowing through the branch pipe
111 to the range of 115-200.degree. C., for example. The first low
surface tension solution even at 115.degree. C. can evaporate
deionized water. It is preferred to heat the first low surface
tension solution to a range of 130-200.degree. C. In this case,
deionized water can be evaporated more effectively. In this
embodiment, the in-line heater 119 heats the first low surface
tension solution flowing through the branch pipe 111 to be in a
range of 150-200.degree. C. In this case, deionized water can be
evaporated still more effectively.
[0083] The first low surface tension solution and second low
surface tension solution are the same as in Embodiment 1, and will
not particularly be described here.
[0084] The controller 129 performs an overall control of the
apparatus including the chemical treating chamber 71, transport
mechanism 91 and cleaning chamber 101. The controller 129 has a
memory storing a recipe specifying procedures, a microprocessor and
a counter/timer. Specifically, the controller 129 controls the spin
of the chuck 81, vertical movement of the scatter preventive cup 87
and the control valve 79 in the chemical treating chamber 71, the
arm 93 of the transport mechanism 91, the spin of the chuck 121,
vertical movement of the scatter preventive cup 127, the control
valves 109, 117 and 118 and in-line heater 119 in the cleaning
chamber 101.
[0085] The above chuck 121 corresponds to the spin holding
mechanism in this invention. The cleaning chamber 101 corresponds
to the treating unit in this invention. The nozzle 103, pipe 105
and control valve 109 correspond to the first treating solution
supply device in this invention. The nozzle 103, branch pipe 111
and control valve 117 correspond to the second treating solution
supply device in this invention. The nozzle 103, branch pipe 112
and control valve 118 correspond to the third treating solution
supply device in this invention. The in-line heater 119 corresponds
to the temperature control device in this invention. The controller
129 corresponds to the control device in this invention.
[0086] Next, operation of the apparatus in Embodiment 3 will be
described. Assume that a wafer W is held and spun by the chuck
81.
[0087] Treating operation in Embodiment 3 will be described with
reference to FIG. 6. In Embodiment 3, for example, HF treatment is
carried out in the chemical treating chamber 71 while producing the
above-noted chemical solution of HF as treating solution, and
thereafter the wafer W is cleaned with the other liquid and
solutions and is then spin-dried in the cleaning chamber 101.
[0088] Specifically, the controller 129 operates the control valve
79 to supply the chemical solution at a predetermined flow rate to
the wafer W turning at low speed (FIG. 6A). This state is
maintained for a predetermined time to carry out chemical treatment
of the wafer W turning at low speed.
[0089] Next, the controller 129 closes the control valve 79 of the
chemical treating chamber 71 to stop the supply of the chemical
solution, and stops turning of the wafer W. With the scatter
preventive cup 87 of the chemical treating chamber 71 lowered (i.e.
in the retracted state), the controller 129 causes the transport
mechanism 91 to transfer the wafer W from chuck 81 onto the arm 93,
and to swing the arm 93 in the horizontal plane toward the cleaning
chamber 101. With the scatter preventive cup 127 of the cleaning
chamber 101 lowered (i.e. in the retracted state), the arm 93 is
driven to place the wafer W on the chuck 121.
[0090] When the wafer W is spinnably held by the chuck 121 in the
cleaning chamber 101, the controller 129 turns the wafer W at low
speed, and opens the control valve 109 to supply deionized water
from the nozzle 103 to the surface of wafer W. As a result,
cleaning treatment only with the deionized water is performed (FIG.
6B).
[0091] After a predetermined time of cleaning treatment with the
deionized water, the controller 129 closes the control valve 109 to
stop the supply of deionized water, and opens the control valve 117
to supply Fluorinert (registered trademark of Sumitomo 3M Ltd.),
which is the first low surface tension solution, at a predetermined
flow rate from the first solution source 114 to the wafer W turning
at low speed. At this time, the in-line heater 119 heats the first
low surface tension solution to the range of 150-200.degree. C.
This state is maintained for a predetermined time to replace the
deionized water on the wafer W with the first low surface tension
solution in the range of 150-200.degree. C. (FIG. 6C). After the
replacement with the first low surface tension solution is
completed, this state is maintained for a predetermined time.
[0092] As shown in FIG. 6C, the wafer W has its surface covered by
the hot (150-200.degree. C.) first low surface tension solution.
The deionized water remaining on the surface of wafer W is
evaporated by the thermal energy of the hot first low surface
tension solution, and leaves the wafer W in the form of vapor. Even
part of the deionized water having entered and remaining in minutia
of the pattern on the surface of wafer W is evaporated by the
thermal energy of the hot first low surface tension solution, and
leaves the wafer W in the form of vapor.
[0093] The vapor departing from the wafer W is exhausted by an
exhaust mechanism, not shown, disposed above the cleaning chamber
101.
[0094] A completion time for the replacement with the first low
surface tension solution is determined by the controller 129, for
example, from the quantity of a puddle formed on and the quantity
scattering from the wafer W which are known, and the flow rate of
the first low surface tension solution supplied.
[0095] After the replacement with the first low surface tension
solution, the controller 129 causes the hydrofluoroether (HFE) to
be supplied as the second low surface tension solution at a
predetermined flow rate to the wafer W turning at low speed. This
is continued for a predetermined time to replace the first low
surface tension solution on the wafer W with the second low surface
tension solution (FIG. 6D). When the replacement of the chemical
solution with the second low surface tension solution is completed,
the controller 129 stops the supply of the second low surface
tension solution from the nozzle 103, and turns the wafer W at low
speed to dry (FIG. 6E).
[0096] A completion time for the replacement with the second low
surface tension solution is determined by the controller 129, for
example, from the quantity of a puddle formed on and the quantity
scattering from the wafer W which are known, and the flow rate of
the second low surface tension solution supplied.
[0097] According to Embodiment 3, as described above, the apparatus
includes the cleaning chamber 101 having the chuck 121 disposed
therein for holding a wafer W to be rotatable in horizontal
posture, and treating the wafer W held by the chuck 121 with the
treating liquid and solutions, the first treating solution supply
device (i.e. the nozzle 103, pipe 105 and control valve 109) for
supplying deionized water to the wafer W turned at low speed by the
chuck 121 in the cleaning chamber 101, the second treating solution
supply device (i.e. the nozzle 103, branch pipe 111 and control
valve 117) for supplying the first low surface tension solution of
lower surface tension than deionized water and higher boiling point
than deionized water to the wafer W turned at low speed by the
chuck 121 in the cleaning chamber 101, the in-line heater 119 for
controlling the temperature of the second low surface tension
solution supplied to the wafer W turned at low speed by the chuck
121 in the cleaning chamber 101 to the temperature range above the
boiling point of deionized water and below the boiling point of the
first low surface tension solution, and the controller 129 for
controlling the in-line heater 119 and second treating solution
supply device (i.e. the nozzle 103, branch pipe 111 and control
valve 117) to supply the first low surface tension solution in the
above temperature range to the wafer W turned at low speed by the
chuck 121 in the cleaning chamber 101 after the treatment of the
wafer W with deionized water. Thus, the first low surface tension
solution controlled to a temperature higher than the boiling point
of deionized water is supplied to the wafer W treated with
deionized water in the cleaning chamber 101. The deionized water
remaining on the surface of wafer W (including the deionized water
having entered and remaining in minutia of the pattern on the
surface of wafer W) is evaporated by the thermal energy of the hot
first low surface tension solution, leaves the surface of wafer W,
and exits the cleaning chamber 101 in the form of vapor. Thus, the
deionized water having entered and remaining in minutia of the
pattern on the surface of wafer W can be completely replaced with
the first low surface tension solution. Only the first low surface
tension solution having low surface tension remains on the surface
of wafer W. The surface of wafer W is subjected to the low surface
tension when drying the first low surface tension solution, which
prevents collapse of the pattern formed on the wafer W.
[0098] The first low surface tension solution on the surface of
wafer W is replaced with the second low surface tension solution of
lower surface tension than deionized water and lower boiling point
than the first low surface tension solution, and then the wafer W
is spin-dried. This requires a shorter drying time than where the
wafer W is dried by being turned at low speed with the first low
surface tension solution remaining thereon. That is, the second low
surface tension solution allows the wafer W to dry more quickly
than the first low surface tension solution because of the lower
boiling temperature.
[0099] The boiling point of deionized water is 100.degree. C., and
the first low surface tension solution is a fluoric inactive liquid
having low surface tension and a sufficiently higher boiling point
than deionized water. Thus, the first low surface tension solution
can assure a good distillation selection ratio with deionized water
to evaporate deionized water effectively.
[0100] Since both the first low surface tension solution and second
low surface tension solution are fluoric inactive liquids, the
first low surface tension solution is easily replaceable with the
second low surface tension solution. Thus, the replacement with the
second low surface tension solution can be carried out in a reduced
time to shorten the drying time.
[0101] This invention is not limited to the foregoing embodiments,
but may be modified as follows:
[0102] (1) In Embodiment 1 described hereinbefore, the treating
tank 1 is open. Instead, the treating tank 1 may be enclosed in a
chamber, with an openable cover disposed on an upper part of the
inner tank 3. Further, a nozzle may be disposed in an upper space
of the chamber for supplying a solvent gas. When pulling up the
wafers W, the upper space is filled with a solvent atmosphere, the
cover is opened, and the holding arm 7 is raised, thereby
replacement with the solvent is effected when the wafers W are
pulled up.
[0103] (2) In Embodiment 1 described hereinbefore, as shown in
FIGS. 2A-2D, the single treating tank 1 is used for the chemical
treatment, deionized water cleaning treatment, replacement with the
first low surface tension solution, replacement with the second low
surface tension solution, and pull-up and drying treatment. A
separate treating tank or treating chamber may be provided for the
chemical treatment, and the treating tank 1 used for the deionized
water cleaning treatment, replacement with the first low surface
tension solution, replacement with the second low surface tension
solution, and pull-up and drying treatment.
[0104] (3) In Embodiment 2 described hereinbefore, the drying
chamber 49 spins the wafer W in a hot atmosphere. The wafer W may
be dried by exposure to the hot atmosphere without the spinning, or
may be dried without using the hot atmosphere, and only by spinning
the wafer W.
[0105] (4) In Embodiments 1 and 2 described hereinbefore, two or
more treating solutions are used. It is therefore desirable to
provide a plurality of branch pipes and switch valves branched from
the drain port 15 and discharge opening 41. The pipes may be
switched according to the treating solutions discharged, to change
collecting locations for the different treating solutions. As a
result, each treating solution can be collected separately to
facilitate waste disposal.
[0106] (5) In Embodiment 3 described hereinbefore, as shown in
FIGS. 6A-6E, spin-drying treatment is carried out after the
replacement with the second low surface tension solution in the
cleaning chamber 101. Instead, as shown in FIG. 7E, the wafer W may
be dried in a hot atmosphere such as of nitrogen gas after the
replacement with the second low surface tension solution.
[0107] This invention may be embodied in other specific forms
without departing from the spirit or essential attributes thereof
and, accordingly, reference should be made to the appended claims,
rather than to the foregoing specification, as indicating the scope
of the invention.
* * * * *