U.S. patent application number 11/863251 was filed with the patent office on 2008-09-11 for method and apparatus for manufacturing superconducting tape through integrated process.
This patent application is currently assigned to Korea Electrotechnology Research Institute. Invention is credited to Dong Woo Ha, Hong Soo Ha, Ho Sup Kim, Rock Kil Ko, Sang Soo Oh, Kyu Jung Song.
Application Number | 20080220976 11/863251 |
Document ID | / |
Family ID | 39742236 |
Filed Date | 2008-09-11 |
United States Patent
Application |
20080220976 |
Kind Code |
A1 |
Kim; Ho Sup ; et
al. |
September 11, 2008 |
Method And Apparatus For Manufacturing Superconducting Tape Through
Integrated Process
Abstract
A method and apparatus for manufacturing superconducting tape
through an integrated process, including the steps of:
heat-treating a substrate wound on a drum in a reaction chamber;
continuously depositing components, constituting a buffer layer, a
superconducting layer, a contact resistance layer, and a protective
layer of the superconducting tape, which are supplied from a
deposition chamber, on the substrate; and heat-treating the
substrate deposited with the components. The present invention is
advantageous in that the unit cost and time for manufacturing a
superconducting tape are decreased because all processes for
manufacturing a superconducting tape can be performed under the
same conditions, the uniformity and performance of a
superconducting tape is improved because the same deposition
conditions are applied to all of the process for manufacturing a
superconducting tape, and a high-quality superconducting tape
having high deposition efficiency can be obtained because specific
components can be deposited on a large-sized substrate using a
drum.
Inventors: |
Kim; Ho Sup; (Gimhae-city,
KR) ; Oh; Sang Soo; (Changwon-city, KR) ; Ha;
Hong Soo; (Changwon-city, KR) ; Song; Kyu Jung;
(Changwon-city, KR) ; Ha; Dong Woo;
(Changwon-city, KR) ; Ko; Rock Kil; (Gimhae-city,
KR) |
Correspondence
Address: |
Hyun Jong Park;TUCHMAN & PARK LLC
41 White Birch Road
Redding
CT
06896-2209
US
|
Assignee: |
Korea Electrotechnology Research
Institute
Changwon-si
KR
|
Family ID: |
39742236 |
Appl. No.: |
11/863251 |
Filed: |
September 28, 2007 |
Current U.S.
Class: |
505/434 ; 118/64;
427/62 |
Current CPC
Class: |
C23C 14/08 20130101;
Y10S 505/704 20130101; C23C 14/562 20130101; Y10S 505/73 20130101;
H01L 39/2432 20130101; C23C 14/0036 20130101; C23C 14/5806
20130101 |
Class at
Publication: |
505/434 ; 118/64;
427/62 |
International
Class: |
H01L 39/24 20060101
H01L039/24 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 9, 2007 |
KR |
10-2007-0023420 |
Claims
1. A method of manufacturing a superconducting tape through an
integrated process, comprising the steps of: heat-treating a
substrate wound on a drum in a reaction chamber; continuously
depositing components, constituting a buffer layer, a
superconducting layer, a contact resistance layer, and a protective
layer of the superconducting tape, which are supplied from a
deposition chamber, on the substrate; and heat-treating the
substrate deposited with the components.
2. The method of manufacturing a superconducting tape through an
integrated process according to claim 1, wherein the method
comprises the steps of: depositing a component, constituting the
buffer layer of the superconducting tape, supplied from the
deposition chamber, on the substrate partially exposed to the
deposition chamber while rotating a drum on which the substrate is
wound; depositing a component, constituting the superconducting
layer of the superconducting tape, supplied from the deposition
chamber, after the step of depositing a buffer layer; heat-treating
the superconducting tape including the buffer layer and the
superconducting layer deposited thereon by supplying oxygen into
the reaction chamber, after the step of depositing a
superconducting layer; depositing a component, constituting the
contact resistance reducing layer of the superconducting tape,
supplied from the deposition chamber, on the superconducting layer
by pumping gas into a separation chamber from the reaction chamber
during the step of heat-treating the superconducting tape using
oxygen; and depositing a component, constituting the protective
layer of the superconducting tape, supplied from the deposition
chamber, after the step of depositing a contact resistance reducing
layer.
3. The method of manufacturing a superconducting tape through an
integrated process according to claim 2, before the step of
depositing a buffer layer, further comprising: a decarbonization
heat treatment step of heat-treating the substrate wound on the
drum in a reaction chamber while increasing a temperature of the
substrate from a room temperature to a process temperature; and a
reduction heat treatment step of reducing an oxide layer formed on
the substrate in the reaction chamber after the decarbonization
heat treatment step.
4. An apparatus for manufacturing a superconducting tape through an
integrated process, comprising: a deposition chamber including a
material supply unit for supplying specific components constituting
a superconducting tape; and a reaction chamber configured to
partially communicate with the deposition chamber and thus expose a
substrate, wound on a drum, to the deposition chamber, wherein the
specific components supplied from the deposition chamber are
deposited on the substrate wound on the drum, so that a heat
treatment process and a thin film deposition process for forming a
superconducting tape are simultaneously performed under the same
conditions.
5. The apparatus for manufacturing a superconducting tape through
an integrated process according to claim 4, wherein the apparatus
comprises: the deposition chamber provided therein with a plurality
of material supply units to deposit the specific components
constituting a thin film, on the substrate; the reaction chamber
which partially communicates with the deposition chamber and in
which the substrate is disposed to be exposed through a region at
which the reaction chamber communicates with the deposition
chamber, thus allowing the specific components supplied from the
plurality of material supply units to be deposited on the
substrate, the reaction chamber including a rotating drum on which
the substrate is wound, a heater for heat-treating the substrate,
and an oxygen supply unit for supplying oxygen into the reaction
chamber; and a separation chamber formed between the deposition
chamber and the reaction chamber to separate atmospheres of the
deposition chamber and the reaction chamber from each other.
6. The apparatus for manufacturing a superconducting tape through
an integrated process according to claim 5, wherein the material
supply unit is a vapor crucible.
7. The apparatus for manufacturing a superconducting tape through
an integrated process according to claim 5, wherein the separation
chamber is configured to pump gas from the reaction chamber.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a method and apparatus for
manufacturing a superconducting tape, and, more particularly, to a
method and apparatus for manufacturing a superconducting tape
through an integrated process, which can obtain a high-quality
superconducting tape using a simplified manufacturing apparatus and
method because all superconductor manufacturing processes are
performed under the same manufacturing conditions, and which can
save time and economic costs.
BACKGROUND OF THE INVENTION
[0002] Generally, a superconducting tape is basically formed by
depositing a buffer layer and a superconducting layer on a metal
substrate and then depositing a contact resistance reducing layer
and a protective layer thereon. This superconducting tape is
manufactured by performing a process of previously heat-treating a
metal substrate, a process of depositing a buffer layer, a process
of depositing a superconducting layer, an oxygen heat-treatment
process, a process of depositing a protective layer, and a
lamination process.
[0003] As a conventional technology for such an apparatus for
depositing a superconducting tape, International Application
Publication No. WO 2004/012278 A2 discloses "an apparatus for
depositing a superconducting material on a tape substrate". In the
apparatus of the conventional technology, vacuum chambers as many
the number of the above processes are serially disposed and
communicate with each other, and a reel chamber including a supply
reel for supplying a tape substrate and another reel chamber
including a winding reel for winding a superconducting tape,
deposited with a superconducting material, are connected to both
ends of the series of vacuum chamber, respectively. As the tape
substrate passes through the chambers each corresponding to each of
the processes, it is sequentially deposited and heat-treated.
[0004] However, a process of manufacturing a superconducting tape
using the apparatus has problems in that chamber fabricating costs
are increased because chambers as many as the number of the
processes are required, the yield of a superconducting tape can be
decreased because the winding speed in the chamber having the
lowest deposition rate and processing rate must be decreased due to
the large number of chambers, and a superconducting tape having
desired performance cannot be obtained when process variables
depart from an optimum range in even one chamber.
[0005] Further, there is a problem in that the temperatures and gas
atmospheres, which are the deposition conditions, are different
from each other in different chambers, so that a separation chamber
for separating the temperatures and atmospheres of the chambers
must be additionally included, thereby increasing the unit cost of
manufacturing a superconducting tape.
SUMMARY OF THE INVENTION
[0006] Accordingly, the present invention has been made to overcome
the above problems occurring in the prior art, and an object of the
present invention is to provide a method and apparatus for
manufacturing a superconducting tape through an integrated process,
including a deposition chamber for supplying specific components
constituting a superconducting tape; a reaction chamber for
depositing the specific components on a substrate, wound on a drum,
and heat-treating the substrate; and a separation chamber for
separating atmospheres of the deposition chamber and the reaction
chamber, wherein all processes for manufacturing a superconducting
tape are performed under the same conditions.
[0007] In order to accomplish the above object, an aspect of the
present invention provides a method of manufacturing a
superconducting tape through an integrated process, including the
steps of heat-treating a substrate wound on a drum in a reaction
chamber; continuously depositing components, constituting a buffer
layer, a superconducting layer, a contact resistance layer, and a
protective layer of the superconducting tape, which are supplied
from a deposition chamber, on the substrate; and heat-treating the
substrate deposited with the components.
[0008] Here, it is preferred that the method include the steps of
depositing a component, constituting the buffer layer of the
superconducting tape, supplied from the deposition chamber, on the
substrate partially exposed to the deposition chamber while
rotating a drum on which the substrate is wound; depositing a
component, constituting the superconducting layer of the
superconducting tape, supplied from the deposition chamber, after
the step of depositing a buffer layer; heat-treating the
superconducting tape including the buffer layer and the
superconducting layer deposited thereon by supplying oxygen into
the reaction chamber, after the step of depositing a
superconducting layer; depositing a component, constituting the
contact resistance reducing layer of the superconducting tape,
supplied from the deposition chamber, on the superconducting layer
by pumping gas into a separation chamber from the reaction chamber
during the step of heat-treating the superconducting tape using
oxygen; and depositing a component, constituting the protective
layer of the superconducting tape, supplied from the deposition
chamber, after the step of depositing a contact resistance reducing
layer.
[0009] Here, it is preferred that the method further include a
decarbonization heat treatment step of heat-treating the substrate
wound on the drum in a reaction chamber while increasing a
temperature of the substrate from a room temperature to a process
temperature; and a reduction heat treatment step of reducing an
oxide layer formed on the substrate in the reaction chamber after
the decarbonization heat treatment step.
[0010] Further, in order to accomplish the above object, another
aspect of the present invention provides an apparatus for
manufacturing a superconducting tape through an integrated process,
including a deposition chamber including a material supply unit for
supplying specific components constituting a superconducting tape;
and a reaction chamber configured to partially communicate with the
deposition chamber and thus expose a substrate, wound on a drum, to
the deposition chamber, wherein the specific components supplied
from the deposition chamber are deposited on the substrate wound on
the drum, so that a heat treatment process and a thin film
deposition process for forming a superconducting tape are
simultaneously performed under the same conditions.
[0011] Here, it is preferred that the apparatus include the
deposition chamber provided therein with a plurality of material
supply units to deposit the specific components constituting a thin
film, on the substrate; the reaction chamber which partially
communicates with the deposition chamber and in which the substrate
is disposed to be exposed through a region at which the reaction
chamber communicates with the deposition chamber, thus allowing the
specific components supplied from the plurality of material supply
units to be deposited on the substrate, the reaction chamber
including a rotating drum on which the substrate is wound, a heater
for heat-treating the substrate, and an oxygen supply unit for
supplying oxygen into the reaction chamber; and a separation
chamber formed between the deposition chamber and the reaction
chamber to separate atmospheres of the deposition chamber and the
reaction chamber from each other.
[0012] Further, it is preferred that the material supply unit be a
vapor crucible, and that the separation chamber be configured to
pump gas from the reaction chamber.
[0013] Accordingly, there are advantages in that the unit cost and
time for manufacturing a superconducting tape are decreased because
all processes for manufacturing a superconducting tape can be
performed under the same conditions, the uniformity and performance
of a superconducting tape is improved because the same deposition
conditions are applied to all of the process for manufacturing the
superconducting tape, and a high-quality superconducting tape
having high deposition efficiency can be obtained because specific
components can be deposited on a large-sized substrate using a
drum.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The above and other objects, features and advantages of the
present invention will be more clearly understood from the
following detailed description, taken in conjunction with the
accompanying drawings, in which:
[0015] FIG. 1 is a schematic view showing an apparatus for
depositing a superconducting tape through an integrated process
according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0016] Hereinafter, a preferred embodiment of the present invention
will be described in detail with reference to the attached
drawing.
[0017] FIG. 1 is a schematic view showing an apparatus for
depositing a superconducting tape through an integrated process
according to the present invention.
[0018] As shown in FIG. 1, the apparatus for depositing a
superconducting tape through an integrated process according to the
present invention basically includes a deposition chamber 100, a
reaction chamber 200, and a separation chamber 300 for separating
the deposition chamber 100 and the reaction chamber 200, which have
different deposition conditions such as temperature and degree of
vacuum.
[0019] The deposition chamber 100 is constantly maintained at a
degree of vacuum of about 10.sup.-5 Torr so as to have a uniform
composition ratio, and includes a plurality of material supply
units 110 for supplying specific components, constituting a
superconducting tape, on a substrate.
[0020] The material supply unit may be one or more selected from
among a target unit using a sputtering deposition method, a target
unit using a pulse laser deposition method, and a vapor crucible
using a vapor deposition method. Preferably, the material supply
unit is a vapor crucible using a vapor deposition method, in which
processes of depositing specific components on a large-sized
substrate are relatively easily performed.
[0021] Here, the vapor crucible is externally provided with an
induction heating coil in order to heat the vapor crucible. In the
induction heating coil, an inlet of the vapor crucible is placed at
the center of the induction heating coil so as to heat the inlet of
the vapor crucible to a higher temperature (because a magnetic
field is the strongest at the center of the induction heating coil,
so that the vapor crucible is easily heated through induction). The
reason for this is that the inlet of the vapor crucible must be
heated to a higher temperature because the inlet of the vapor
crucible can become clogged due to the condensation of the vapor of
deposition materials.
[0022] Accordingly, specific components constituting a
superconducting tape are sublimed to a vapor phase, and the
vaporized components reach a substrate and are then deposited on
the substrate. Here, if necessary, in order to set deposition
regions close to the material supply units 110, depending on an
operational sequence of the material supply units 110, guide plates
may be provided between the material supply units, or guide tubes
may be provided in front of respective material supply units.
[0023] Subsequently, the reaction chamber 200 partially
communicates with the deposition chamber 100, and serves to deposit
materials, supplied from the material supply units 110 in the
deposition chamber 100, on a substrate. In the present invention,
the substrate is supplied in the form of tape wound around the
outer surface of a drum 210. Here, the drum 210 and the substrate
wound around it are exposed to the opening of the deposition
chamber 100 through which the reaction chamber 200 communicates
with the deposition chamber 100, and thus specific components
constituting a superconducting tape are deposited on the substrate.
Here, as the drum 210 rotates, specific components are deposited on
the substrate, which is exposed to the deposition chamber 100 while
the materials deposited on the substrate are heat-treated with
oxygen at a predetermined pressure of 5 mTorr or lower in the
inside of the reaction chamber 200 into which oxygen gas is
supplied.
[0024] The specific components are supplied from the material
supply units 110, and then sequentially deposited on the substrate.
Generally, the specific components include components constituting
a buffer layer deposited right on the substrate, components
constituting a superconducting layer, components constituting a
contact resistance reducing layer, and components constituting a
protective layer. These components are supplied and deposited on
the substrate depending in the order of deposition. These
deposition components are sequentially supplied to the substrate,
and, if necessary, oxygen gas is additionally supplied thereto,
thereby performing deposition together with oxygen heat treatment.
Further, where the deposition is performed under the conditions
that the process temperatures for depositing the layers are
controlled to be within the temperature range
(700.about.800.degree. C.) for depositing the superconducting
layer, the deposition process can be continuously and integrally
performed under the same deposition conditions.
[0025] Further, a heater 220 is disposed in the reaction chamber
200 adjacent to the drum 210 in order to heat-treat the substrate
or materials deposited thereon. Generally, halogen heater is used
as the heater 220, and the heater 220 can be controlled to heat the
substrate or materials deposited thereon from a room temperature to
a process temperature or more. That is, the heater serves to remove
organic materials and an oxide layer from the substrate, and to
prevent an oxygen deficiency phenomenon by supplying oxygen to a
superconducting layer deposited on the substrate.
[0026] Further, the reaction chamber 200 is provided therein with
an oxygen supply unit 230 for constantly controlling the pressure
of oxygen and supplying the oxygen into the reaction chamber 200.
Since the oxygen supply unit serves to prevent the oxygen
deficiency phenomenon in a superconducting layer after the
superconducting layer is deposited on the substrate, it is possible
to deposit the superconducting layer on the substrate in an oxygen
atmosphere (5 mTorr or lower) while conducting heat treatment of
the substrate. Here, after oxygen is supplied into the reaction
chamber 200 through the oxygen supply unit 230, and thus the heat
treatment and the deposition of a superconducting layer are
completed, the reaction chamber 200 is maintained in a vacuum
atmosphere again because the oxygen in the reaction chamber 200 is
pumped into a separation chamber 300, which is described below.
[0027] Subsequently, the separation chamber 300 serves to separate
the thermal and vacuum deposition conditions of the deposition
chamber 100 and the reaction chamber 200 from each other. The
separation chamber 300 is disposed at region between the deposition
chamber 100 and the reaction chamber 200, other than a region
through which the deposition chamber 100 and the reaction chamber
200 communicate with each other. Here, in fact, the deposition
chamber 100, the reaction chamber 200 and the separation chamber
300 communicate with each other through gaps between the separation
chamber 300 and the drum 210. However, since gas is always pumped
in the separation chamber 300 in a state in which the reaction
chamber 200 is maintained at a high pressure and the deposition
chamber is maintained at a low pressure, the gas in the high
pressure reaction chamber 200 is not introduced into the deposition
chamber 100 through the separation chamber 300. For this reason,
the deposition chamber 100 and the reaction chamber 200 are
separated from each other somewhat in terms of temperature and
vacuum state.
[0028] According to the apparatus for manufacturing a
superconducting tape of the present invention, the heat treatment
process is performed in the reaction chamber 200, specific
components constituting a superconducting tape, which are
continuously supplied from the material supply units 110 in the
deposition chamber 100, are deposited on the substrate wound on the
drum 210. Meanwhile, in the reaction chamber 200, the heat
treatment of a superconducting layer can be performed in an oxygen
atmosphere, concurrently with or subsequently to the deposition of
specific components. Consequently, all the deposition processes for
manufacturing a superconducting tape can be continuously and
simultaneously performed under the same deposition conditions.
[0029] Hereinafter, a method of manufacturing a superconducting
tape through an integrated process according to the present
invention will be described in detail.
[0030] Generally, in the case of an IBAD substrate, in which a
buffer layer is deposited on a metal substrate, the method of
manufacturing a superconducting tape includes a buffer layer
deposition process, a superconducting layer deposition process, an
oxygen heat-treatment process, a contact resistance reducing layer
deposition process, and a protective layer deposition process.
Meanwhile, in the case of a RABiTS substrate, which is a metal
substrate in which crystals are biaxially aligned, the method of
manufacturing a superconducting tape further includes a
heat-pretreatment process in addition to the above processes. The
heat-pretreatment process includes a decarbonization heat-treatment
process of removing organic materials from the interior of metal
and a reduction heat-treatment process of removing an oxide layer
from a surface of metal. Hereinafter, a method of manufacturing a
superconducting tape will be described below with reference to the
case where a RABiTS substrate is used as the metal substrate.
[0031] 1) Decarbonization Heat-Treatment Step
[0032] The decarbonization heat-treatment step is used to remove
organic materials included in a substrate. In this step, the
substrate is heat-treated from room temperature to a process
temperature of 700.about.800.degree. C. for 2 hours in a reaction
chamber 200 while supplying a mixed gas of argon and oxygen. In
this case, the partial pressure of the mixed gas may be in the
range of several mTorr to 200 mTorr. As the temperature of the
substrate is increased, organic materials included in the metal
substrate are diffused to the surface of the substrate, and the
diffused organic materials react with oxygen on the surface
thereof, thereby producing CO and CO.sub.2. These gases are
discharged outside using a vacuum pump.
[0033] 2) Reduction Heat-Treatment Step
[0034] The reduction heat-treatment step is performed in a reaction
chamber 200 so as to remove an oxide layer formed on the surface of
a substrate through a reduction reaction. Since the growth of an
oxide layer dominantly progresses on a plane (111) and thus
epitaxial growth on a plane (001) cannot be anticipated under
normal process conditions, the oxide layer must be removed through
reduction heat-treatment. This reduction heat-treatment is
performed at a temperature of 700.about.800.degree. C. In this
case, when the temperature in the reduction heat-treatment is
controlled to be equal to that in buffer layer deposition, which
will be performed later, processes for increasing and decreasing
the temperature need not be performed. A mixed gas including
hydrogen is used as a gas supplied at the time of the reduction
heat-treatment. The reduction heat-treatment is performed while
maintaining the partial pressure of the mixed gas in the range of
several mTorr to 200 mTorr.
[0035] 3) Buffer Layer Deposition Step
[0036] The buffer layer deposition step is performed by rotating a
drum 210, around which a substrate is wound, an opening region
through which the deposition chamber 100 and the reaction chamber
200 communicate with each other. In the buffer layer deposition
step, a buffer layer is formed on the substrate in order to prevent
the mismatch of lattice between the substrate and the
superconducting layer and the diffusion of the substrate. This
buffer layer is comprised of a plurality of thin films, and,
generally, is comprised of a multi-layered thin film such as
CeO.sub.2/YSZ/CeO.sub.2, CeO2/Y.sub.2O.sub.3/CeO.sub.2 or
Y.sub.2O.sub.3/CeO.sub.2. The deposition temperature for the buffer
layer may be in the range of 500.about.800.degree. C., and the
deposition rate thereof is about several .ANG./sec. Further, in the
buffer layer deposition step, water vapor in the reaction chamber
200 is used as an oxidation source, and an oxidation reaction can
be induced by arbitrarily maintaining the partial pressure of gas
using oxygen. In this case, when the temperature in the buffer
layer deposition is controlled to be equal to that in
superconducting layer deposition, which is described below,
processes for increasing and decreasing the temperature need not be
performed.
[0037] 4) Superconducting Layer Deposition Step
[0038] Directly after the buffer layer deposition is performed, a
superconducting layer is deposited on the buffer layer. The process
temperature for depositing the superconducting layer is in the
range of 700.about.800.degree. C., and the partial pressure of
oxygen is 5 mTorr.
[0039] 5) Oxygen Heat-Treatment Step
[0040] Directly after the superconducting layer deposition is
performed, this oxygen heat treatment is performed. In this step,
the process temperature for performing oxygen heat-treatment is
controlled by cutting off a power source and conducting natural
cooling, and oxygen, serving as a process gas, is supplied into a
reaction chamber until the pressure of the oxygen becomes
atmospheric pressure. The reason for performing oxygen
heat-treatment is that the composition ratio of oxygen is adjusted
to be suitable for a superconducting layer having insufficient
oxygen.
[0041] 6) Contact Resistance Reducing Layer Deposition Step
[0042] This step is performed to reduce contact resistance by
depositing a contact resistance reducing layer composed of Au or Pt
between the superconducting layer and a protective layer, which is
described below. This deposition is performed after the reaction
chamber forms a vacuum during the oxygen heat-treatment process.
Directly after the deposition is performed, oxygen heat-treatment
is performed again.
[0043] 7) Protective Layer Deposition Step
[0044] A protective layer serves to protect the superconducting
layer from physical and chemical damage, and to protect a
superconductive sheet by forming an alternate route for current
when the superconductive sheet is quenched. The protective layer is
formed on the contact resistance reducing layer. The protective
layer is made of cheap material having high conductivity, such as
copper or the like.
[0045] According to the method of manufacturing a superconducting
tape of the present invention, the heat treatment process is
performed in the reaction chamber 200, specific components
constituting a superconducting tape, which are continuously
supplied from the material supply units 110 in the deposition
chamber 100, are deposited on the substrate wound on the drum 210,
and, in the reaction chamber 200, the heat treatment of a
superconducting layer can be performed in an oxygen atmosphere,
concurrently with or subsequently to the deposition of specific
components, so that all deposition processes for manufacturing a
superconducting tape can be continuously and integrally performed
under the same deposition conditions.
[0046] The present invention is advantageous in that the unit cost
and time for manufacturing a superconducting tape are decreased
because all processes for manufacturing a superconducting tape can
be performed under the same conditions, the uniformity and
performance of a superconducting tape is improved because the same
deposition conditions are applied to all of the process for
manufacturing a superconducting tape, and a high-quality
superconducting tape having high deposition efficiency can be
obtained because specific components can be deposited on a
large-sized substrate using a drum.
[0047] As described above, although the preferred embodiment of the
present invention has been disclosed for illustrative purposes,
those skilled in the art will appreciate that various
modifications, additions and substitutions are possible, without
departing from the scope and spirit of the invention as disclosed
in the accompanying claims.
* * * * *