U.S. patent application number 11/897475 was filed with the patent office on 2008-06-26 for heating apparatus and semiconductor manufacturing apparatus.
Invention is credited to Tom Deacon, Akira Okabe.
Application Number | 20080152328 11/897475 |
Document ID | / |
Family ID | 39542950 |
Filed Date | 2008-06-26 |
United States Patent
Application |
20080152328 |
Kind Code |
A1 |
Okabe; Akira ; et
al. |
June 26, 2008 |
Heating apparatus and semiconductor manufacturing apparatus
Abstract
It is an object to provide a heating apparatus and semiconductor
manufacturing apparatus which can carry out a fine heating
temperature control easily. A heating apparatus for heating a
semiconductor substrate placed on a support arranged in a reaction
chamber of a semiconductor manufacturing apparatus includes a
plurality of heat source units, each of which has a heat source
lamp being attachable and detachable, and being attachable by
changing orientations in the circumferential direction. A
semiconductor manufacturing apparatus includes: a reaction chamber
to which a reaction gas is supplied; a support arranged in the
reaction chamber; and a heating apparatus which heats a
semiconductor substrate placed on the support, wherein the heating
apparatus includes a plurality of heat source units, each of which
has a heat source lamp being attachable and detachable, and being
attachable by changing orientations in the circumferential
direction.
Inventors: |
Okabe; Akira; (Ohmura-shi,
JP) ; Deacon; Tom; (Sunnyvale, CA) |
Correspondence
Address: |
JORDAN AND HAMBURG LLP
122 EAST 42ND STREET, SUITE 4000
NEW YORK
NY
10168
US
|
Family ID: |
39542950 |
Appl. No.: |
11/897475 |
Filed: |
August 30, 2007 |
Current U.S.
Class: |
392/355 ;
156/272.2 |
Current CPC
Class: |
H05B 3/0047
20130101 |
Class at
Publication: |
392/355 ;
156/272.2 |
International
Class: |
F24D 13/00 20060101
F24D013/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 26, 2006 |
JP |
2006-349463 |
Claims
1. A heating apparatus for heating a semiconductor substrate placed
on a support arranged in a reaction chamber of a semiconductor
manufacturing apparatus, wherein the heating apparatus includes a
plurality of heat source units, each of which has a heat source
lamp being attachable and detachable, and being attachable by
changing orientations in the circumferential direction.
2. The heating apparatus according to claim 1, wherein each of the
heat source units has a hexagonal outer shape.
3. The heating apparatus according to claim 1, wherein each of the
heat source units has a light reflector which reflects light
emitted from the heat source lamp, and the heat source lamp, which
has a cylindrical shape, is substantially arranged parallel with
the light reflector.
4. The heating apparatus according to claim 3, wherein a distance
between the heat source lamp and the light reflector can be
adjusted.
5. The heating apparatus according to claim 3, wherein the light
reflector is covered with a gold film.
6. The heating apparatus according to claim 3, wherein the light
reflector is attachable and detachable, and is attachable by
changing orientations in the circumferential direction, and the
light reflector has a hexagonal outer shape.
7. The heating apparatus according to claim 1, wherein a partition
wall is arranged between the heat source units.
8. A semiconductor manufacturing apparatus comprising: a reaction
chamber to which a reaction gas is supplied; a support arranged in
the reaction chamber; a heating apparatus which heats a
semiconductor substrate placed on the support, wherein the heating
apparatus includes a plurality of heat source units, each of which
has a heat source lamp being attachable and detachable, and being
attachable by changing orientations in the circumferential
direction.
9. The heating apparatus according to claim 8, wherein each of the
heat source units has a hexagonal outer shape.
10. The semiconductor manufacturing apparatus according to claim 8,
wherein each of the heat source units has a light reflector which
reflects light emitted from the heat source lamp, and the heat
source lamp, which has a cylindrical shape, is substantially
arranged parallel with the light reflector.
11. The semiconductor manufacturing apparatus according to claim
10, wherein a distance between the heat source lamp and the light
reflector can be adjusted.
12. The semiconductor manufacturing apparatus according to claim
10, wherein the light reflector is covered with a gold film.
13. The semiconductor manufacturing apparatus according to claim
10, wherein the light reflector is attachable and detachable, and
is attachable by changing orientations in the circumferential
direction, and the light reflector has a hexagonal outer shape.
14. The semiconductor manufacturing apparatus according to claim 8,
wherein a partition wall is arranged between the heat source units.
Description
BACKGROUND OF THE INVENTION
[0001] (1) Field of the Invention
[0002] The present invention relates to a heating apparatus and a
semiconductor manufacturing apparatus. Particularly, the present
invention relates to a heating apparatus and semiconductor
manufacturing apparatus for manufacturing, for example, a silicon
single crystal semiconductor substrate and a semiconductor
substrate which an oxide film is deposited on.
[0003] (2) Description of Related Art
[0004] Silicon substrates having an epitaxial structure have often
been used as start materials for semiconductor integrated circuit
elements with high integration and high performance of the
elements. The epitaxial silicon substrate is obtained by subjecting
a silicon single crystal thin film to vapor phase epitaxial growth
on a silicon single crystal substrate. Examples of manufacturing
methods thereof include a batch system and a single wafer system.
In the batch system, the number of silicon single crystal
substrates which can be processed by one process is several wafers
to tens of wafers. In the single wafer system, the substrates are
processed wafer by wafer.
[0005] This conventional vapor phase epitaxial growth apparatus is
composed of a reaction gas inlet for introducing reaction gas into
the apparatus from the outside of the apparatus, a support which
supports the silicon single crystal substrate, a transparent quartz
glass plate which surrounds the support and forms a reaction
chamber space, and a heating apparatus for heating the support.
[0006] When the support is heated by the heating apparatus in the
epitaxial growth apparatus, the silicon single crystal substrate
placed on the support is heated. When the temperature of the
silicon single crystal substrate reaches a desired temperature, the
reaction gas is introduced into the reaction chamber formed of the
quartz glass plate from the outside of the apparatus. The reaction
gas is decomposed in the reaction chamber, and the silicon single
crystal thin film is epitaxially grown on the silicon single
crystal substrate.
[0007] Meanwhile, the temperatures of about 600 to 1200.degree. C.
are required for the silicon epitaxial growth, and the difference
in temperature caused by uneven heating affects the results of
growth such as the growth rate and film characteristic. A variation
is problematically generated in the characteristic of a device by
the difference in temperature. Particularly, a crystal defect
referred to as transposition and slip in a single crystal lattice
is generated by uneven heating in a high temperature range, and
thereby the device characteristic is restricted or the device
malfunctions.
[0008] Then, in order to solve such a problem, a heat treatment
apparatus as shown in, for example, FIG. 6 has been proposed. FIG.
6 illustrates a conventional heat treatment apparatus. JP
2003-347228A discloses a heat treatment apparatus 110. The heat
treatment apparatus 110 is provided with a casing 112 which forms a
treatment chamber 111 for processing a plurality of wafers 101 as
substrates to be treated. The casing 112 is composed of a
cylindrical upper cup 113 a lower surface of which is opened and a
cylindrical lower cup 114 an upper surface of which is opened, and
has a cylindrical hollow shape. A disk-shape transmission plate
115, which is made of quartz, is held between the upper cup 113 and
the lower cup 114. An exhaust port 116 is formed in a part of the
side wall of the lower cup 114 so as to communicate the inside and
outside of the treatment chamber 111. An exhaust for exhausting the
treatment chamber 111 to less than atmospheric pressure is
connected to the exhaust port 116. A wafer carry-in/carry out port
117 is formed in the other part of the side wall of the lower cup
114. A gate valve 118 for opening and closing the wafer
carry-in/carry out port 117 is set in the wafer carry-in/carry out
port 117. An insertion hole 119 is formed on the central line of
the bottom wall of the lower cup 114. A gas supply line 121
connected to a gas supply apparatus 120 is piped on the central
line of the insertion hole 119. A plurality of gas outlets 122 are
formed in the upper end of the gas supply line 121 with intervals
in the circumferential direction so as to radially jet a gas. A
cylindrical rotary shaft 123 is concentrically arranged at the
outside of the gas supply line 121, and is rotatably supported by a
plurality of bearing apparatuses 124. The rotary shaft 123 is
rotated and driven by a rotary driving apparatus 125. A base 130
having a slightly smaller diameter than that of the treatment
chamber 111 and having a circular dish shape is horizontally
supported at the upper end of the rotary shaft 123. The base 130 is
rotatably supported by a bearing apparatus 129 set on the bottom
surface of the lower cup 114. Four rotary shafts 131 are
perpendicularly built at an equal interval in the circumferential
direction on the concentric circle on the bottom wall of the base
130. The rotary shafts 131 are respectively and rotatably supported
by the bearing apparatus 135, and each of planetary gears 132 of a
planetary gear mechanism is fixed to the upper end of each of the
rotary shafts 131. Four planetary gears 132 are engaged with a sun
gear 133 fixed to an intermediate part of the gas supply line 121
so as to be freely rolled. Electrostatic chucks 134 for
electrostatically attracting and holding the wafer 101 which is a
substrate to be treated are respectively and horizontally set so as
to be integrally rotated on the upper end surfaces of four
planetary gears 132. A heater 140 which heats the wafer 101 of the
treatment chamber 111 so as to transmit the transmission plate 115
is set in the upper cup 113. The heater 140 is provided with a
plurality of heat lamps 141 in which tungsten-halogen lamps are
formed in a circle line shape and a light reflector 142 for
downwardly reflecting the heat of the heat lamp 141.
BRIEF SUMMARY OF THE INVENTION
[0009] However, although the plurality of heat lamps formed in a
circle line shape has been used in the conventional heat treatment
apparatus, a finer heating temperature control has been
desired.
[0010] The present invention has been accomplished in view of the
foregoing problems. It is an object of the present invention to
provide a heating apparatus and semiconductor manufacturing
apparatus which can carry out a fine heating temperature control
easily.
[0011] In order to attain the above object, a heating apparatus of
the present invention for heating a semiconductor substrate placed
on a support arranged in a reaction chamber of a semiconductor
manufacturing apparatus, includes a plurality of heat source units,
each of which has a heat source lamp being attachable and
detachable, and being attachable by changing orientations in the
circumferential direction.
[0012] Herein, the orientation of the heat source lamp to the
semiconductor substrate can be controlled for each of the heat
source units by the heat source lamp being attachable and
detachable, and being attachable by changing orientations in the
circumferential direction, and the heating temperature distribution
of the semiconductor substrate can be controlled.
[0013] When each of the heat source units has a hexagonal outer
shape in the heating apparatus of the present invention, the heat
source units can cover a flat surface and heat a circular object
efficiently. Also, the plurality of heat source units can be
expanded on a circular semiconductor substrate or support without
bringing about a large power loss. Furthermore, since the plurality
of heat source units can be arranged adjacent to each other, a
hexagonal heating element group which applies a desirable radiant
flux pattern to the surface of the semiconductor substrate and the
surface of the support can be formed.
[0014] When each of the heat source units has a light reflector
which reflects light emitted from the heat source lamp in the
heating apparatus of the present invention, heating using the light
reflector can be carried out. Also, when the heat source lamp,
which has a cylindrical shape, is substantially arranged parallel
with the light reflector, a distance between the light reflector
and the heat source lamp is easily adjusted.
[0015] When the distance between the heat source lamp and the light
reflector can be adjusted in the heating apparatus of the present
invention, the light reflected by the light reflector can be
adjusted.
[0016] When the light reflector is covered with a gold film in the
heating apparatus of the present invention, the light reflector
shows high reflectance of light with a wavelength in an infrared
region emitted from the heat source lamp.
[0017] When the light reflector is attachable and detachable, and
is attachable by changing orientations in the circumferential
direction; and the light reflector has a hexagonal outer shape in
the heating apparatus of the present invention, the heating
temperature distribution of the semiconductor substrate can be
controlled by changing only the orientation of the light reflector
without changing the orientation of the heat source lamp. In
addition, since the orientation of the heat source lamp is not
changed, labor for changing a structure for electric supply to the
heat source lamp can also be saved.
[0018] When a partition wall is arranged between the heat source
units in the heating apparatus of the present invention, the
diffusion of the light can be suppressed, and the light can be
concentrated on the semiconductor substrate.
[0019] Also, in order to attain the above object, a semiconductor
manufacturing apparatus of the present invention includes a
reaction chamber to which a reaction gas is supplied; a support
arranged in the reaction chamber; and a heating apparatus which
heats a semiconductor substrate placed on the support, wherein the
heating apparatus includes a plurality of heat source units, each
of which has a heat source lamp being attachable and detachable,
and being attachable by changing orientations in the
circumferential direction.
[0020] Herein, since the orientation of the heat source lamp to the
semiconductor substrate can be controlled by the heat source lamp
being attachable and detachable, and being attachable by changing
orientations in the circumferential direction, the heating
temperature distribution of the semiconductor substrate can be
controlled.
[0021] When each of the heat source units has a hexagonal outer
shape in the semiconductor manufacturing apparatus of the present
invention, the heat source units can cover a flat surface and heat
a circular object efficiently. Also, the plurality of heat source
units can be expanded on a circular semiconductor substrate or
support without bringing about a large power loss. Furthermore,
since the plurality of heat source units can be arranged adjacent
to each other, a hexagonal heating element group which applies a
desirable radiant flux pattern to the surface of the semiconductor
substrate and the surface of the support can be formed.
[0022] When each of the heat source units has a light reflector
which reflects light emitted from the heat source lamp in the
semiconductor manufacturing apparatus of the present invention,
heating using the light reflector can be carried out. Also, when
the heat source lamp, which has a cylindrical shape, is
substantially arranged parallel with the light reflector, a
distance between the light reflector and the heat source lamp is
easily adjusted.
[0023] When the light reflector is attachable and detachable, and
is attachable by changing orientations in the circumferential
direction; and the light reflector has a hexagonal outer shape in
the semiconductor manufacturing apparatus of the present invention,
the heating temperature distribution of the semiconductor substrate
can be controlled by changing only the orientation of the light
reflector without changing the orientation of the heat source lamp.
In addition, since the orientation of the heat source lamp is not
changed, labor for changing a structure for electric supply to the
heat source lamp can also be saved.
[0024] When a distance between the heat source lamp and the light
reflector can be adjusted in the semiconductor manufacturing
apparatus of the present invention, the light reflected by the
light reflector can be adjusted.
[0025] When the light reflector is covered with a gold film in the
semiconductor manufacturing apparatus of the present invention, the
light reflector shows high reflectance of light with a wavelength
in an infrared region emitted from the heat source lamp.
[0026] When a partition wall is arranged between the heat source
units in the semiconductor manufacturing apparatus of the present
invention, the diffusion of the light can be suppressed, and the
light can be concentrated on the semiconductor substrate.
[0027] The heating apparatus according to the present invention can
carry out a fine heating temperature control easily.
[0028] The semiconductor manufacturing apparatus according to the
present invention can carry out a fine heating temperature control
easily.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] FIG. 1 is a schematic view illustrating an aspect in which
heat source lamps of a heating apparatus to which the present
invention is applied are concentrically arranged.
[0030] FIG. 2 is a schematic view illustrating a second arrangement
of heat source lamps in a heating apparatus to which the present
invention is applied.
[0031] FIG. 3 is a schematic view illustrating a third arrangement
of heat source lamps in a heating apparatus to which the present
invention is applied.
[0032] FIG. 4 is a schematic view illustrating a light reflector
used for heat source units of a heating apparatus to which the
present invention is applied.
[0033] FIG. 5 is a schematic view illustrating an epitaxial growth
apparatus to which the present invention is applied.
[0034] FIG. 6 illustrates a conventional heat treatment
apparatus.
DETAILED DESCRIPTION OF THE INVENTION
[0035] Hereinafter, an embodiment of the present invention will be
described with reference to the drawings, and the embodiment is
provided for understanding the present invention.
[0036] FIG. 1 is a schematic view illustrating an aspect in which
heat source lamps of a heating apparatus to which the present
invention is applied are concentrically arranged. In FIG. 1, a
heating apparatus 1 is provided with a circular main body 2, and a
plurality of heat source units 2A which are attachable and
detachable to the circular main body 2, and are attachable by
changing orientations in the circumferential direction. A partition
wall 4 which is covered with a gold film and is made of aluminum is
arranged between the heat source units 2A. Each of the plurality of
heat source units is provided with a light reflector 2B which
reflects light in an infrared region, is covered with a gold film,
is made of aluminum and has a hexagonal outer shape, and four
cylindrical heat source lamps (halogen lamp or the like) 3 both
ends of which are inserted into holes formed in the light reflector
2B and which are substantially arranged parallel with each other
and in an arch form. Each of the heat source lamps 3 is
substantially arranged parallel with the light reflector 2B, and a
distance between the heat source lamp 3 and the light reflector 2B
can be adjusted so as to lengthen and shorten the distance. A
cooling air port 1A is formed at the center of the main body 2.
[0037] Also, since the heat source lamps 3 arranged in each of the
heat source units 2A are concentrically arranged to the center of
the main body 2, eleven lamp rows are formed in a radial direction
in FIG. 1. The heating temperature distribution of the support and
the heating temperature distribution of the semiconductor substrate
can be controlled by changing an electric current in each of the
rows, and the heating temperature distribution of the semiconductor
substrate can be made uniform.
[0038] Although examples of the heat source lamps include a halogen
lamp herein, any heat source lamps may be used as long as they can
heat the semiconductor substrate. For example, an infrared lamp may
be used. As long as the partition wall and the light reflector are
made of a material which can reflect light in an infrared region
emitted from the heat source lamp, they may not be necessarily
covered with the gold film and made of aluminum.
[0039] As long as the heat source unit has the heat source lamp
being attachable and detachable, and being attachable by changing
orientations in the circumferential direction, the outer shape of
the light reflector, i.e., the outer shape of the heat source unit
may not be necessarily a hexagonal shape. For example, the outer
shape may be an octagonal shape, and the outer shapes of all the
heat source units may not be necessarily a hexagonal shape. The
heat source units having the hexagonal shape and the other heat
source units having the other shape, for example, the heat source
units having a quadrangular shape or an octagonal shape may be used
together.
[0040] As long as the heat source unit has the heat source lamp
being attachable and detachable, and being attachable by changing
orientations in the circumferential direction, the light reflector
may not be necessarily used, and for example, the outer shapes of
the heat source units may be a hexagonal shape without using the
light reflector.
[0041] As long as the heat source lamp is attachable and
detachable, and being attachable by changing orientations in the
circumferential direction, the heat source lamp may not necessarily
have a cylindrical shape.
[0042] FIG. 2 is a schematic view illustrating a second arrangement
of heat source lamps in a heating apparatus to which the present
invention is applied. In FIG. 2, in each of the heat source units
attached so as to extend in the right and left radial directions
from the center of the main body 2, a CCD camera connecting port 5
for connecting a CCD camera for observing the reaction chamber of
the semiconductor manufacturing apparatus, a quartz temperature
measuring port 6 for connecting a thermometer for measuring a
quartz temperature of a quartz glass plate for forming the reaction
chamber, a first support temperature measuring port 7 for
connecting a first thermometer for measuring the temperature of the
support, and a second support temperature measuring port 8 for
connecting a second thermometer for measuring the temperature of
the support are formed.
[0043] Referring to the heat source units 2A attached so as to
extend in six radial directions from the center of the main body 2,
the heat source lamps 3 are arranged along the radial direction
excluding the outermost thereof.
[0044] Herein, as long as each of the heat source units has heat
source lamps which are attachable and detachable, and are
attachable by changing orientations in the circumferential
direction, the CCD camera connecting port, the quartz temperature
measuring port, the first support temperature measuring port, and
the second support temperature measuring port may not be
necessarily formed. Also, at least one thereof may be formed.
[0045] FIG. 3 is a schematic view illustrating a third arrangement
of heat source lamps in a heating apparatus to which the present
invention is applied. In FIG. 3, all of the heat source lamps 3 of
the heat source units 2A are arranged in the same direction.
[0046] While not shown in FIGS. 1 to 3, an electric control system
is used at the back side of the light reflector 2B, and the
electric control system supplies electric power to the heat source
lamps of each of the heat source units.
[0047] As is apparent from FIGS. 1 to 3, the heat source lamps 3
can be rotated by 90 degrees in the heat source unit 2A by removing
the heat source lamps 3, rotating the heat source lamps 3 by 90
degrees in the circumferential direction to change the orientations
of the heat source lamps 3, and attaching the heat source lamps 3.
Thereby, the fine heating temperature control can be carried out
and the heating temperature distribution of the semiconductor
substrate can be made uniform.
[0048] FIG. 4 is a schematic view illustrating a light reflector
used for heat source units of a heating apparatus to which the
present invention is applied. FIG. 4A is a plan view of the light
reflector. FIG. 4B is a sectional view taken from line A-A of FIG.
4A. FIG. 4C is a sectional view showing a state where the
arrangement of the heat source lamps is changed.
[0049] In FIG. 4A, the hexagonal light reflector 2B is detachably
attached to the main body of the heating apparatus by fasteners 2E,
and can be attached by changing orientations in the circumferential
direction. Holes 2C into which the both ends of the heat source
lamp 3 are inserted are formed.
[0050] As shown in FIG. 4B, four grooves 2D substantially extending
in parallel with each other and having a cross section having a
semi-circular arc shape are formed in the light reflector 2B, and
the heat source lamps 3 are arranged along the grooves 2D.
[0051] As shown in FIG. 4C, the heat source lamps 3 are removed;
the orientations thereof are changed in the circumferential
direction, and the heat source lamps 3 are arranged across the
grooves 2D having the cross section having the semi-circular arc
shape.
[0052] While the example in which the grooves 2D having the cross
section having the semi-circular arc shape are formed in the light
reflector 2B is illustrated herein, the grooves may not be
necessarily formed in the light reflector as long as the light
reflector reflects the light in the infrared region. The light
reflector may be flat, and the cross-sectional shape of the groove
may not be necessarily the semi-circular arc shape. For example,
the cross-sectional shape may be a V-shape.
[0053] FIG. 5 is a schematic view illustrating an epitaxial growth
apparatus to which the present invention is applied. In FIG. 5, an
epitaxial growth apparatus (one example of a semiconductor
manufacturing apparatus) 9 is provided with a reaction chamber, a
disk-shaped support 15 which is arranged in the reaction chamber
and supports a plurality of semiconductor substrates (silicon
substrate) 16, and a heating apparatus 1 arranged on both upper and
lower sides of the support around the reaction chamber. The
reaction chamber is constituted by pressing upper dome-shaped
quartz glass plate 10 against lower dome-shaped quartz glass plate
10 with an upper clamp 11 made of stainless steel and a lower clamp
12 made of stainless steel and fixing them using screws. A reaction
gas inlet 13 and a reaction gas outlet 14 are formed between the
upper and lower dome-shaped quartz glass plates 10.
[0054] The heating apparatus 1 is a heating apparatus as shown in
FIG. 1 or the like, and a rotating member 17, which is attached to
the center of the support 15, rotates the support 15.
[0055] When the epitaxial growth is carried out using the epitaxial
growth apparatus 9, a plurality of semiconductor substrates 16 are
placed on the disk-shaped support 15 arranged in the reaction
chamber. A reaction gas which contains trichlorosilane gas and
hydrogen gas is introduced into the reaction chamber from the
reaction gas inlet 13. The reaction gas containing the
trichlorosilane gas and the hydrogen gas flows in the vicinity of
the semiconductor substrate 16, and the reaction chamber is
irradiated with light from the heating apparatus arranged around
the reaction chamber. Thereby, the semiconductor substrate 16 is
heated to carry out the epitaxial growth by the heat and the
reaction gas.
[0056] While the example for placing the plurality of semiconductor
substrates is mentioned herein, the plurality of semiconductor
substrates may not be necessarily used as long as the semiconductor
substrate can be heated by the heating apparatus, and one
semiconductor substrate may be used.
[0057] While the example using the silicon substrate is mentioned,
any substrate may be used as long as the epitaxial growth can be
carried out. For example, a gallium arsenide (GaAs) substrate and a
zinc telluride (ZnTe) substrate may be used. As long as an
epitaxial layer can be grown on the substrate, any material gas may
be used. For example, when the gallium arsenide substrate is used,
a gas which contains Ga is used, and a gas containing Te is used
when the zinc telluride substrate is used.
[0058] Next, an epitaxial growth process will be described.
[0059] First, the semiconductor substrate 16 is heated to 600 to
1200.degree. C. by the heat source unit 2A of the heating apparatus
1, while rotating the support 15 which supports the semiconductor
substrate 16 using the rotating member 17.
[0060] Next, the epitaxial growth is carried out by introducing the
reaction gas containing the trichlorosilane gas and the hydrogen
gas into the reaction chamber from the reaction gas inlet 13.
[0061] While the trichlorosilane gas is introduced into the
reaction chamber as the material gas contained in the reaction gas
herein, the material gas may be any gas as long as the material gas
is a gas containing silicon atoms. For example, monosilane gas,
dichlorosilane gas or silicon tetrachloride gas may be introduced
into the reaction chamber.
[0062] As mentioned above, the example of the semiconductor
manufacturing apparatus is the epitaxial growth apparatus, however,
the example of semiconductor manufacturing apparatus is not
necessarily the epitaxial growth apparatus, and the other example
of the semiconductor manufacturing apparatus is an oxidation
furnace, a CVD (chemical vapor deposition) apparatus or an RTP
(rapid thermal processing) apparatus.
[0063] Thus, in the present invention, since each of the plurality
of heat source units has the heat source lamps being attachable and
detachable, and being attachable by changing orientations in the
circumferential direction, the orientations of the heat source
lamps to the semiconductor substrate can be controlled for each of
the heat source units, and the heating temperature distribution of
the semiconductor substrate can be controlled. Thereby, the fine
heating temperature control can be easily carried out. Accordingly,
the uniform heating temperature distribution of the semiconductor
substrate and support can be realized.
[0064] Since each of the heat source units has the hexagonal outer
shape, the heat source units can cover the flat surface and heat
the circular object efficiently. Also, the plurality of heat source
units can be expanded on the circular semiconductor substrate or
support without bringing about a large power loss. Furthermore,
since the plurality of heat source units can be arranged adjacent
to each other, the hexagonal heating element group which applies
the desirable radiant flux pattern to the surface of the
semiconductor substrate and the surface of the support can be
formed. Thereby, a zone control can be carried out in the areas of
some semiconductor substrates. Accordingly, the present invention
can contribute to realization of the uniform heating temperature
distribution of the semiconductor substrate and support.
[0065] Since each of the heat source units has the light reflector
which reflects the light emitted from the heat source lamp, heating
using the light reflector can be carried out. Also, since the heat
source lamp, which has the cylindrical shape, is substantially
arranged parallel with the light reflector, the distance between
the light reflector and the heat source lamp is easily adjusted.
Thereby, the present invention can contribute to realization of the
uniform heating temperature distribution of the semiconductor
substrate and support.
[0066] When the distance between the heat source lamp and the light
reflector can be adjusted, the light reflected by the light
reflector can be adjusted.
[0067] Since the heat source lamps are arranged along the grooves
having the cross section having the semi-circular arc shape, or the
heat source lamps are arranged across the grooves, the heating
temperature distribution of the semiconductor substrate can be
changed. Thereby, the present invention can contribute to
realization of the uniform heating temperature distribution of the
semiconductor substrate and support.
[0068] Since the light reflector is covered with the gold film, the
light reflector shows high reflectance of the light with the
wavelength in the infrared region emitted from the heat source
lamp.
[0069] Since the light reflector is attachable and detachable, and
is attachable by changing orientations in the circumferential
direction, and the light reflector has the hexagonal outer shape,
the heating temperature distribution of the semiconductor substrate
can be controlled by changing only the orientation of the light
reflector without changing the orientation of the heat source lamp.
In addition, since the orientation of the heat source lamp is not
changed, labor for changing a structure for electric supply to the
heat source lamp can also be saved.
[0070] Since the partition wall is arranged between the heat source
units, the diffusion of the light can be suppressed, and the light
can be concentrated on the semiconductor substrate.
* * * * *