U.S. patent application number 11/975038 was filed with the patent office on 2008-04-17 for method of fabricating an organic electroluminescent device and system of displaying images.
This patent application is currently assigned to TPO Displays Corp.. Invention is credited to Chuan-Yi Chan, Chun-Yen Liu, Chang-Ho Tseng.
Application Number | 20080087889 11/975038 |
Document ID | / |
Family ID | 39302332 |
Filed Date | 2008-04-17 |
United States Patent
Application |
20080087889 |
Kind Code |
A1 |
Chan; Chuan-Yi ; et
al. |
April 17, 2008 |
Method of fabricating an organic electroluminescent device and
system of displaying images
Abstract
A method for fabricating organic electroluminescent devices is
disclosed. The method comprises providing a substrate divided into
first and second regions, forming an amorphous silicon layer on the
substrate, forming a protection film on the amorphous silicon layer
within the second region, performing an excimer laser annealing
process on the amorphous silicon layer for converting it to a
polysilicon layer, removing the protection film, patterning the
polysilicon layer, thus a first patterned polysilicon layer in the
first region and a second patterned polysilicon layer in the second
region are formed. A resultant organic electroluminescent device is
obtained. Specifically, the grain size of the first patterned
polysilicon layer is large than that of the second patterned
polysilicon layer.
Inventors: |
Chan; Chuan-Yi; (Taipei
City, TW) ; Liu; Chun-Yen; (Jhubei City, TW) ;
Tseng; Chang-Ho; (Sinwu Township, TW) |
Correspondence
Address: |
LIU & LIU
444 S. FLOWER STREET, SUITE 1750
LOS ANGELES
CA
90071
US
|
Assignee: |
TPO Displays Corp.
|
Family ID: |
39302332 |
Appl. No.: |
11/975038 |
Filed: |
October 16, 2007 |
Current U.S.
Class: |
257/40 ;
257/E21.412; 257/E51.018; 438/29 |
Current CPC
Class: |
H01L 27/1281 20130101;
H01L 27/1229 20130101; H01L 27/1296 20130101; H01L 27/1237
20130101 |
Class at
Publication: |
257/40 ; 438/29;
257/E21.412; 257/E51.018 |
International
Class: |
H01L 51/50 20060101
H01L051/50; H01L 21/336 20060101 H01L021/336 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 16, 2006 |
TW |
095138022 |
Claims
1. A method for fabricating organic electroluminescent devices,
comprising: providing a substrate comprising a pixel area including
a plurality of pixels, wherein each pixel is divided into first and
second regions; forming an amorphous silicon layer on the
substrate; forming a protection film on the amorphous silicon layer
within the second region; performing an excimer laser annealing
process on the amorphous silicon layer for converting it to a
polysilicon layer; and patterning the polysilicon layer, thus a
first patterned polysilicon layer in the first region and a second
patterned polysilicon layer in the second region are formed,
wherein the grain size of the first patterned polysilicon layer is
large than that of the second patterned polysilicon layer.
2. The method as claimed in claim 1, wherein the protection film
comprises Si-based materials.
3. The method as claimed in claim 1, wherein the protection film is
employed in the excimer laser annealing process for reflecting a
portion of the excimer laser.
4. The method as claimed in claim 1, further comprises: forming a
gate insulating layer overlying the patterned polysilicon layer
post the step of patterning the polysilicon layer.
5. The method as claimed in claim 1, wherein the first patterned
polysilicon layer in the first region is a first active layer and
forms a switching TFT, and the second patterned polysilicon layer
in the second region is a second active layer and forms a driving
TFT.
6. The method as claimed in claim 1, wherein the protection film is
removed after the excimer laser annealing process.
7. The method as claimed in claim 1, wherein first and second
patterned amorphous silicon layers are formed in the first and
second regions, respectively, by patterning the amorphous silicon
layer immediately after the formation thereof on the substrate.
8. The method as claimed in claim 7, wherein the protection film
comprises Si-based materials.
9. The method as claimed in claim 7, wherein the protection film is
employed in the excimer laser annealing process for reflecting a
portion of the excimer laser.
10. The method as claimed in claim 7, further comprises: forming a
gate insulating layer overlying the polysilicon layer uncovered by
the protection film, substrate and the protection film post t the
excimer laser annealing process.
11. The method as claimed in claim 7, wherein the first patterned
polysilicon layer in the first region is a first active layer and
forms a switching TFT, and the second patterned polysilicon layer
in the second region is a second active layer and forms a driving
TFT.
12. A method for fabricating an organic electroluminescent device,
comprising: providing a substrate comprising a pixel area including
a plurality of pixels, wherein each pixel is divided into first and
second regions; forming a patterned protection film overlying the
second region; forming a amorphous silicon layer overlying the
substrate and patterned protection film; performing an excimer
laser annealing process on the amorphous silicon layer for
converting it to a polysilicon layer; and patterning the
polysilicon layer, thus a first patterned polysilicon layer in the
first region and a second patterned polysilicon layer in the second
region are formed, wherein the grain size of the first patterned
polysilicon layer is large than that of the second patterned
polysilicon layer.
13. The method as claimed in claim 12, wherein the patterned
protection film comprises metal materials.
14. The method as claimed in claim 12, wherein the patterned
protection film possess a higher thermal conductivity in the
excimer laser annealing process.
15. The method as claimed in claim 12, further comprises: forming a
gate insulating layer overlying the patterned polysilicon layer and
the substrate post the step of patterning the polysilicon
layer.
16. The method as claimed in claim 12, wherein the first patterned
polysilicon layer in the first region is a first active layer and
forms a switching TFT, and the second patterned polysilicon layer
in the second region is a second active layer and forms a driving
TFT.
17. A system for displaying images, comprising: an organic
electroluminescent device, comprising: a substrate with a pixel
area thereon; wherein the pixel area comprises a plurality of
pixels, each pixel comprising: a switching region and a driving
region; a switching TFT in the switching region; and a driving TFT
in the driving region, at least comprising a gate electrode, a
polysilicon layer underlying the gate electrode and a patterned
protection film underlying the polysilicon layer, wherein the
patterned protection film that is a metal layer is between the
polysilicon layer and the substrate.
18. The system as claimed in claim 17, further comprising a display
panel, wherein the organic electroluminescent device forms a
portion of the display panel.
19. The system as claimed in claim 18, further comprising an
electronic device, wherein the electronic device comprises: the
display panel; and an input unit coupled to the display panel and
operative to provide input to the display panel such that the
display panel displays images.
20. The system as claimed in claim 19, wherein the electronic
device is a mobile phone, digital camera, PDA (personal digital
assistant), notebook computer, desktop computer, television, car
display, or portable DVD player.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a method for fabricating an
electroluminescent device, and in particular relates to a method
for fabricating a thin film transistor (TFT).
[0003] 2. Description of the Related Art
[0004] A conventional thin film transistor (TFT), can be an
amorphous silicon TFT or a polysilicon silicon TFT, includes light
emitting and circuit regions. A fabrication method thereof mainly
includes the steps of forming TFTs, forming a pixel electrode and
forming organic light emitting diodes. Fabrication processes of a
TFT typically include forming buffer layer, polysilicon layer, gate
insulating layer, gate electrode and interlayer dielectric
overlying the overall substrate surface in sequence. A pixel
electrode electrically connected to the TFTs is then formed after
the completion of the TFTs. Thereafter, a resultant
electroluminescent device is obtained by sequential formation of
transparent electrode, organic light emitting layer and reflection
cathode overlying the light emitting region. In a fabrication
method of polysilicon TFTs, an exicimer laser annealing process is
usually utilized to transform the amorphous silicon layer overlying
the buffer layer to a polysilicon layer, thus a polysilicon TFT is
obtained.
[0005] The polysilicon TFTs (for example, serving as a driving TFT)
produced by the exicimer laser annealing process, however, have
various mobility, leading to a problem such as non-uniform
luminance between pixels that render a defect so called mura.
[0006] Accordingly, an electroluminescent device capable of solving
the described issues is desirable.
BRIEF SUMMARY OF THE INVENTION
[0007] In view of the problems in conventional processes, the
addition of the protection film is proposed to decrease the
difference of electric properties between TFTs. Furthermore, the
aperture can be increased, even in a shorter channel length, by the
addition of the protection film.
[0008] An embodiment of a method for fabricating organic
electroluminescent devices is disclosed. The method comprises
providing a substrate divided into first and second regions,
forming an amorphous silicon layer on the substrate, forming a
protection film on the amorphous silicon layer within the second
region, performing an excimer laser annealing process on the
amorphous silicon layer for converting it to a polysilicon layer,
removing the protection film, patterning the polysilicon layer,
thus a first patterned polysilicon layer in the first region and a
second patterned polysilicon layer in the second region are formed.
A resultant organic electroluminescent device is obtained.
Specifically, the grain size of the first patterned polysilicon
layer is large than that of the second patterned polysilicon
layer.
[0009] Another embodiment of a method for fabricating an organic
electroluminescent devices, comprising: providing a substrate
comprising a pixel area including a plurality of pixels, wherein
each pixel is divided into first and second regions; forming a
patterned protection film overlying the second region; forming a
amorphous silicon layer overlying the substrate and patterned
protection film; performing an excimer laser annealing process on
the amorphous silicon layer for converting it to a polysilicon
layer; and patterning the polysilicon layer, thus a first patterned
polysilicon layer in the first region and a second patterned
polysilicon layer in the second region are formed, wherein the
grain size of the first patterned polysilicon layer is large than
that of the second patterned polysilicon layer.
[0010] Another embodiment of a system for displaying images
comprises an organic electroluminescent device. The organic
electroluminescent comprises a substrate with a pixel area thereon,
wherein the pixel area comprises a plurality of pixels, each pixel
comprises a switching region and a driving region; a switching TFT
in the switching region; and a driving TFT in the driving region,
at least comprising a gate electrode, a polysilicon layer
underlying the gate electrode and a patterned protection film
underlying the polysilicon layer, wherein the patterned protection
film that is a metal layer is between the polysilicon layer and the
substrate.
[0011] By utilizing the embodiments of the invention, issues such
as extreme difference of electric properties existing between TFTs,
low aperture can be improved without an increase of process
complexity.
[0012] A detailed description is given in the following embodiments
with reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The present invention can be more fully understood by
reading the subsequent detailed description and examples with
references made to the accompanying drawings, wherein:
[0014] FIG. 1 is an equivalent circuit of a sub-pixel of an organic
electroluminescent device.
[0015] FIGS. 2a.about.2f are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0016] FIGS. 3a.about.3f are cross-sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0017] FIGS. 4a.about.4g are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0018] FIGS. 5a.about.5g are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0019] FIG. 6 schematically shows another embodiment of a system
for displaying images.
DETAILED DESCRIPTION OF THE INVENTION
[0020] The following description is of the best-contemplated mode
of carrying out the invention. This description is made for the
purpose of illustrating the general principles of the invention and
should not be taken in a limiting sense. The scope of the invention
is best determined by reference to the appended claims.
[0021] Reference will now be made in detail to the present
embodiments, examples of which are illustrated in the accompanying
drawings. Wherever possible, the same reference numbers are used in
the drawings and the description to refer to the same or like
parts. In the drawings, the shape and thickness of one embodiment
may be exaggerated for clarity and convenience. This description
will be directed in particular to elements forming part of, or
cooperating more directly with, apparatus in accordance with the
present invention. It is to be understood that elements not
specifically shown or described may take various forms well known
to those skilled in the art. Further, when a layer is referred to
as being on another layer or "on" a substrate, it may be directly
on the other layer or on the substrate, or intervening layers may
also be present.
[0022] FIG. 1 is an equivalent circuit of a pixel of an organic
electroluminescent device. It is noted that each "pixel"
hereinafter includes a switching TFT and a driving TFT.
[0023] As shown in FIG. 1, in a pixel area (not shown) including a
plurality of pixels, one pixel 100 comprises a switching TFT 102, a
driving TFT 104, an organic light emitting diode 106, a data line
108, a scan line 110, and a storage capacitor 112. The organic
light emitting diode 106 further comprises an anode electrode, an
electroluminescent layer and a cathode electrode (not shown). Note
also that the switching TFT 102 and driving TFT 104 are formed in a
same pixel.
First Embodiment
[0024] FIGS. 2a.about.2f are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0025] As shown in FIG. 2a, a buffer layer 202, an amorphous
silicon layer 204 and a protection film 206 are formed sequentially
overlying a substrate 200 divided into a first region (for example,
a switching TFT region I) and a second region (for example, a
driving TFT region II). The protection film 206 is formed on a
portion of the amorphous silicon layer 204 in the second region II,
and includes silicon-based materials such as SiOx, SiNx, SiOxNy or
a stack of SiOx, SiNx.
[0026] As shown in FIG. 2b, the amorphous silicon layer 204
proceeds an excimer laser annealing (ELA) process 208 and
transforms to polysilicon layers 204a and 204b. The polysilicon
layers 204a and 204b, however, have different grain size because
the protection film 206 can reflect a portion laser in the excimer
laser annealing (ELA) process 208. That is, the polysilicon layer
204b uncovered by the protection film 206 possesses greater grain
size due to its direct exposure to the excimer laser, and has a
mobility of about 100 cm.sup.2 V-s. The polysilicon layer 204a
underlying the protection film 206, however, can get smaller and
uniform grain size because the protection film 206 reflects a
portion of laser. The polysilicon layer 204a has a mobility of
about 100 cm.sup.2 V-s.
[0027] As shown in FIG. 2c, the protection film 206 is removed. As
shown in FIG. 2d, the polysilicon layers 204a and 204b are
patterned to form a first active layer 204'b in the switching TFT
region I and a second active layer 204a in the driving TFT region
II.
[0028] As shown in FIG. 2e, a gate dielectric layer 210 is formed
to cover the buffer layer 202, patterned polysilicon layers i.e.
the first active layer 204'b, second active layer 204a.
[0029] As shown in FIG. 2f, subsequent processes proceeds in
sequence, forming gate electrodes 212 and 214, interlayer
dielectric 216, conductive line 218, cap layer 220 and transparent
electrode (pixel electrode) 224. The subsequent processes are well
known, thus are omitted here. As a result, an organic
electroluminescent device 2000 with switching and driving TFTs is
obtained. The switching TFT includes a gate electrode 212, a gate
dielectric layer 210 and a first active layer 204'b and the driving
TFT includes a gate electrode 214, a gate dielectric layer 210 and
a second active layer 204a. The first active layer 204'b includes a
channel region 204'c, lightly doped drains 204'd, source/drain
electrodes 204'e and the second active layer 204a includes a
channel region 204c and source/drain electrodes 204d.
Second Embodiment
[0030] FIGS. 3a.about.3f are cross-sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0031] As shown in FIG. 3a, a buffer layer 302 and amorphous
silicon layer 304 are formed sequentially overlying a substrate 300
divided into a switching TFT region I and a driving TFT region
II.
[0032] As shown in FIG. 3b, the amorphous silicon layer 304 is
patterned, thus a patterned amorphous silicon layer 304b in the
switching TFT region I and a patterned amorphous silicon layer 304a
in the driving TFT region II are formed.
[0033] As shown in FIG. 3c, a protection film 306 is formed
covering the patterned amorphous silicon layer 304a and a portion
of the buffer layer 302, and includes silicon-based materials such
as SiOx, SiNx, SiOxNy or a stack of SiOx, SiNx.
[0034] As shown in FIG. 3d, the patterned amorphous silicon layers
304a and 304b proceeds an excimer laser annealing (ELA) process 308
and transforms to polysilicon layers 304c and 304d. The polysilicon
layers 304d in the switching TFT region I serves a first active
layer of the switching TFT formed later and the polysilicon layer
304c in the driving TFT region II serves a second active layer of
the driving TFT formed later. The polysilicon layers 304c and 304d,
however, have different grain size because the protection film 306
can reflect apportion laser in the excimer laser annealing (ELA)
process 308. That is, the polysilicon layer 304b uncovered by the
protection film 306 possesses greater grain size due to its direct
exposure to the excimer laser, and has a mobility of about 100
cm.sup.2 V-s. The polysilicon layer 304c underlying the protection
film 306, however, can get smaller and uniform grain size because
the protection film 306 reflects a portion of laser. The
polysilicon layer 304c has a mobility of about 100
cm.sup.2/V-s.
[0035] As shown in FIG. 3e, a gate dielectric layer 309 is formed
to cover the buffer layer 302, patterned polysilicon layers i.e.
the first active layer, second active layer.
[0036] As shown in FIG. 3f, subsequent processes proceeds in
sequence, forming gate electrodes 310 and 312, interlayer
dielectric 314, conductive line 316, cap layer 318 and transparent
electrode (pixel electrode) 322. The subsequent processes are well
known, thus are omitted here. As a result, an organic
electroluminescent device 3000 with switching and driving TFTs is
obtained. The switching TFT includes a gate electrode 310, a gate
dielectric layer 309 and a first active layer; the driving TFT
includes a gate electrode 312, a gate dielectric layer 309 and a
second active layer. The first active layer includes a channel
region 304'a, lightly doped drains 304'b, source/drain electrodes
304'c; the second active layer 304'd includes a channel region
304'd and source/drain electrodes 304'e.
Third Embodiment
[0037] FIGS. 4a.about.4g are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0038] As shown in FIG. 4a, a protection film 402 is formed
overlying a substrate 400 divided into a switching TFT region I and
a driving TFT region II. The protection film 402 includes
silicon-based materials such as SiOx, SiNx, SiOxNy or a stack of
SiOx, SiNx.
[0039] As shown in FIG. 4b, a buffer layer 404 is formed overlying
the patterned protection film 402 and the substrate 400. As shown
in FIG. 4c, an amorphous silicon layer 406 is formed overlying the
buffer layer 404.
[0040] As shown in FIG. 4d, the amorphous silicon layer 406
proceeds an excimer laser annealing (ELA) process 408 and
transforms to polysilicon layers 406a and 406b.
[0041] As shown in FIG. 4e, patterned polysilicon layers 406'a and
406b are formed after a patterning process of the polysilicon
layers 406a and 406b. The polysilicon layers 406'a in the switching
TFT region I serves a first active layer of the switching TFT
formed later and the polysilicon layer 406b in the driving TFT
region II serves a second active layer of the driving TFT formed
later. The polysilicon layers 406'a and 406b, however, have
different grain size because the patterned protection film 402 can
reflect apportion laser in the excimer laser annealing (ELA)
process 408. That is, the patterned polysilicon layer 406'a
possesses greater grain size due to its direct exposure to the
excimer laser, and has a mobility of about 100 cm.sup.2/V-s. The
patterned polysilicon layer 406'a overlying the patterned
protection film 402, however, can get smaller and uniform grain
size because the patterned protection film 402 reflects a portion
of laser. The patterned polysilicon layer 406'a has a mobility of
about 100 cm.sup.2/V-s.
[0042] As shown in FIG. 4f, a gate dielectric layer 410 is formed
to cover the buffer layer 402 and patterned polysilicon layers i.e.
the first active layer, second active layer.
[0043] As shown in FIG. 4g, subsequent processes proceeds in
sequence, forming gate electrodes 412 and 414, interlayer
dielectric 416, conductive line 418, cap layer 420 and transparent
electrode (pixel electrode) 424. The subsequent processes are well
known, thus are omitted here. As a result, an organic
electroluminescent device 4000 with switching and driving TFTs is
obtained. The switching TFT includes a gate electrode 412, a gate
dielectric layer 410 and a first active layer; the driving TFT
includes a gate electrode 414, a gate dielectric layer 410 and a
second active layer. The first active layer includes a channel
region 406'd, lightly doped drains 406'b, source/drain electrodes
406'c; the second active layer includes a channel region 406c and
source/drain electrodes 406d.
Fourth Embodiment
[0044] FIGS. 5a.about.5g are cross sections showing an embodiment
of a method for fabricating an organic electroluminescent
device.
[0045] As shown in FIG. 5a, a patterned protection film 502 is
formed overlying a substrate 500 divided into a switching TFT
region I and a driving TFT region II. Furthermore, the patterned
protection film 502 in the driving TFT region II and can be any
metal materials.
[0046] As shown in FIG. 5b, a buffer layer 504 is formed overlying
the patterned protection film 502 and the substrate 500. As shown
in FIG. 5c, an amorphous silicon layer 506 is formed overlying the
buffer layer 504.
[0047] As shown in FIG. 5d, the amorphous silicon layer 506
proceeds an excimer laser annealing (ELA) process 508 and
transforms to polysilicon layers 506a and 506b.
[0048] As shown in FIG. 5e, patterned polysilicon layers 506'a and
506b are formed after a patterning process of the polysilicon
layers 506a and 506b. The polysilicon layers 506'a in the switching
TFT region I serves a first active layer of the switching TFT
formed later and the polysilicon layer 506b in the driving TFT
region II serves a second active layer of the driving TFT formed
later. The polysilicon layers 506'a and 506b, however, have
different grain size because the patterned protection film 502
possess a higher thermal conductivity that can dissipate the heat
easier than other portion. That is, the patterned polysilicon layer
506'a possesses greater grain size due to its direct exposure to
the excimer laser, and has a mobility of about 100 cm.sup.2/V-s. In
contrast, the patterned polysilicon layer 506'a overlying the
patterned protection film 502 can get smaller and uniform grain
size. The patterned polysilicon layer 506'a has a mobility of about
100 cm.sup.2/V-s.
[0049] As shown in FIG. 5f, a gate dielectric layer 510 is formed
to cover the buffer layer 502 and patterned polysilicon layers i.e.
the first active layer, second active layer.
[0050] As shown in FIG. 5g, subsequent processes proceeds in
sequence, forming gate electrodes 512 and 514, interlayer
dielectric 516, conductive line 518, cap layer 520 and transparent
electrode (pixel electrode) 524. The subsequent processes are well
known, thus are omitted here. As a result, an organic
electroluminescent device 5000 with switching and driving TFTs is
obtained. The switching TFT includes a gate electrode 512, a gate
dielectric layer 510 and a first active layer; the driving TFT
includes a gate electrode 514, a gate dielectric layer 510 and a
second active layer. The first active layer includes a channel
region 506'd, lightly doped drains 506'b, source/drain electrodes
506'c; the second active layer includes a channel region 506c and
source/drain electrodes 506d.
[0051] FIG. 6 schematically shows another embodiment of a system
for displaying images which, in this case, is implemented as a
display panel 620, a flat panel device 640 or an electronic device
600. The described active matrix organic electroluminescent device
can be incorporated into a display panel that can be an organic
light emitting diode (OLED) panel. As shown in FIG. 6, the display
panel 620 comprises an active matrix organic electroluminescent
device 610, such as the active matrix organic electroluminescent
devices 2000, 3000 and 4000 respectively shown in FIGS. 2f, 3f and
4g. In other embodiments, a flat panel device 640 can be composed
of the display panel 620 and a controller 630. In other
embodiments, the display panel 620 can also form a portion of a
variety of electronic devices (in this case, electronic device
600). Generally, the electronic device 600 can comprise the flat
panel device 640 including the display panel 620, the controller
630 and an input unit 650. Further, the input unit 650 is
operatively coupled to the flat panel device 640 and provides input
signals (e.g., an image signal) to the display panel 620 to
generate images. The electronic device 600 can be a mobile phone,
digital camera, PDA (personal digital assistant), notebook
computer, desktop computer, television, car display, or portable
DVD player, for example.
[0052] As described above, in the embodiments of the invention, an
excimer laser annealing (ELA) process is utilized to form
additional passivation film or metal film overlying or/and
underlying the buffer layer. In other embodiments, additional
protection film or metal film is formed on the gate insulating
layer. In this way, the switching TFT and driving TFT possess
different grain size. As a result, a more uniform driving current
can flow in an active matrix organic electroluminescent device
including the TFTs with different grain size, thus defects like
mura are avoided.
[0053] While the invention has been described by way of example and
in terms of the preferred embodiments, it is to be understood that
the invention is not limited to the disclosed embodiments. To the
contrary, it is intended to cover various modifications and similar
arrangements (as would be apparent to those skilled in the art).
Therefore, the scope of the appended claims should be accorded the
broadest interpretation so as to encompass all such modifications
and similar arrangements.
* * * * *