U.S. patent application number 11/929331 was filed with the patent office on 2008-03-06 for small electrode for a chacogenide switching device and method for fabricating same.
This patent application is currently assigned to Micron Technology Inc.. Invention is credited to Alan R. Reinberg, Renee Zahorik, Russell C. Zahorik.
Application Number | 20080055973 11/929331 |
Document ID | / |
Family ID | 25318069 |
Filed Date | 2008-03-06 |
United States Patent
Application |
20080055973 |
Kind Code |
A1 |
Reinberg; Alan R. ; et
al. |
March 6, 2008 |
Small Electrode for a Chacogenide Switching Device and Method for
Fabricating Same
Abstract
Semiconductor devices including a memory cell are provided. In
one embodiment, the memory cell includes a first conductive
material within a pore of a dielectric layer. The first conductive
material may include a first surface having a first dimension that
is less than the photolithographic limit. Further, in this
embodiment, the memory cell includes a structure changing material
in contact with the first surface of the first conductive material
along a substantial portion of the first dimension. Additional
devices and systems including a memory cell, and methods for
manufacturing such a memory cell, are also provided.
Inventors: |
Reinberg; Alan R.; (Boise,
ID) ; Zahorik; Russell C.; (Boise, ID) ;
Zahorik; Renee; (Boise, ID) |
Correspondence
Address: |
FLETCHER YODER (MICRON TECHNOLOGY, INC.)
P.O. BOX 692289
HOUSTON
TX
77269-2289
US
|
Assignee: |
Micron Technology Inc.
Boise
ID
|
Family ID: |
25318069 |
Appl. No.: |
11/929331 |
Filed: |
October 30, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11494052 |
Jul 27, 2006 |
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11929331 |
Oct 30, 2007 |
|
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10872765 |
Jun 21, 2004 |
7102151 |
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11494052 |
Jul 27, 2006 |
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|
09740256 |
Dec 19, 2000 |
6777705 |
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10872765 |
Jun 21, 2004 |
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09344604 |
Jun 25, 1999 |
6189582 |
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09740256 |
Dec 19, 2000 |
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08854220 |
May 9, 1997 |
5952671 |
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09344604 |
Jun 25, 1999 |
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Current U.S.
Class: |
365/163 ; 257/3;
257/E45.002; 365/148; 438/102 |
Current CPC
Class: |
H01L 27/2409 20130101;
H01L 45/1691 20130101; H01L 27/2463 20130101; H01L 45/1683
20130101; H01L 45/1233 20130101; H01L 45/06 20130101; H01L 45/144
20130101 |
Class at
Publication: |
365/163 ;
257/003; 365/148; 438/102; 257/E45.002 |
International
Class: |
H01L 45/00 20060101
H01L045/00 |
Claims
1. A method of manufacturing a memory cell, the method comprising:
forming an access device on a semiconductor substrate; depositing a
layer of dielectric material on the access device; forming a pore
in the layer of dielectric material; depositing a first layer of
conductive material within the pore to form a first electrode
substantially disposed within the pore; depositing a layer of
structure changing material on the first electrode; and depositing
a second layer of conductive material on the layer of structure
changing material to form a second electrode.
2. The method, as set forth in claim 1, comprising etching the
second layer of conductive material, the layer of structure
changing material, the layer of dielectric material, and the access
device to form a memory cell.
3. The method, as set forth in claim 1, wherein the pore formed in
the layer of dielectric material is smaller than the
photolithographic limit.
4. A method of manufacturing a memory cell, the method comprising:
forming a first conductive material within a pore of a dielectric
layer, the first conductive material including a first surface
having a first dimension that is less than the photolithographic
limit; and forming a layer of structure changing material in
contact with the first surface of the first conductive
material.
5. The method of claim 4, wherein the first surface is within the
pore of the dielectric layer.
6. The method of claim 4, further comprising forming an access
device and the dielectric layer on a semiconductor substrate such
that the access device is formed between the first conductive
material and the semiconductor substrate.
7. The method of claim 6, wherein the access device includes a
diode.
8. The method of claim 7, wherein forming the access device
comprises: forming an n-doped material over the semiconductor
substrate; and forming a p-doped material over the n-doped material
such that the p-doped material is formed between the n-doped
material and the first conductive material.
9. The method of claim 4, wherein the dielectric layer includes
oxide.
10. The method of claim 4, wherein the first dimension of the first
conductive material is substantially equal to a pore dimension.
11. The method of claim 4, wherein forming the layer of structure
changing material includes forming the structure changing material
in contact with the first surface of the first conductive material
along essentially the entire first dimension.
12. The method of claim 11, further comprising forming a second
conductive material having a second surface in contact with the
structure changing material along a second dimension, wherein the
second dimension is greater than the first dimension.
13. The method of claim 4, wherein the structure changing material
includes a chalcogenide material.
14. A semiconductor device, comprising: a memory cell including: a
first conductive material within a pore of a dielectric layer, the
first conductive material including a first surface having a first
dimension that is less than the photolithographic limit; and a
structure changing material in contact with the first surface of
the first conductive material along a substantial portion of the
first dimension.
15. The semiconductor device of claim 14, wherein the first surface
is within the pore of the dielectric layer.
16. The semiconductor device of claim 14, wherein the memory cell
further includes an access device coupled between the first
conductive material and a second conductive material.
17. The semiconductor device of claim 16, wherein the second
conductive material forms at least a portion of a digit line.
18. The semiconductor device of claim 16, wherein the access device
includes a diode.
19. The semiconductor device of claim 18, wherein the diode
includes: a p-doped material coupled to the first conductive
material; and an n-doped material coupled to the second conductive
material.
20. The semiconductor device of claim 14, wherein the dielectric
layer includes oxide.
21. The semiconductor device of claim 14, wherein the first
dimension of the first conductive material is substantially equal
to a pore dimension.
22. The semiconductor device of claim 14, further comprising a
second conductive material having a second surface in contact with
the structure changing material along a second dimension of the
structure changing material, the second dimension being greater
than the first dimension.
23. The semiconductor device of claim 14, wherein the structure
changing material includes a chalcogenide material.
24. The semiconductor device of claim 14, wherein the structure
changing material is electrically connected between the first
conductive material and a word line.
25. A semiconductor memory, comprising: a memory matrix including a
plurality of memory cells arranged in rows and columns, each of the
plurality of memory cells including: a first conductive material
within a pore of a dielectric layer, the first conductive material
including a first surface having a first dimension that is less
than the photolithographic limit; and a structure changing material
in contact with the first surface of the first conductive material
along a substantial portion of the first dimension.
26. The semiconductor memory of claim 25, further comprising
peripheral circuitry including a plurality of control lines,
wherein the memory matrix is coupled to at least one of the
plurality of control lines.
27. The semiconductor memory of claim 26, wherein the memory matrix
is coupled to each of the control lines of the plurality of control
lines and the peripheral circuitry includes addressing circuitry
for addressing the memory cells contained within the memory
matrix.
28. The semiconductor memory of claim 26, wherein the memory matrix
is coupled to each of the control lines of the plurality of control
lines and the peripheral circuitry includes read and write
circuitry for storing data in and retrieving data from the memory
cells contained within the memory matrix.
29. A system, comprising: a microprocessor; a memory device
controlled by the microprocessor, the memory device including a
memory cell comprising: a first conductive material within a pore
of a dielectric layer, the first conductive material including a
first surface having a first dimension that is less than the
photolithographic limit; and a structure changing material in
contact with the first surface of the first conductive material
along a substantial portion of the first dimension.
30. The system of claim 29, wherein the microprocessor accesses the
memory device to retrieve program instructions from the memory
device.
31. The system of claim 29, wherein the microprocessor accesses the
memory device to store data in the memory device and retrieve data
from the memory device.
32. The system of claim 29, wherein the structure changing material
includes a chalcogenide material.
33. A method of using a memory device, comprising the step of:
retrieving data from at least one of a plurality of memory cells
contained within a memory matrix, each memory cell including: a
first conductive material within a pore of a dielectric layer, the
first conductive material including a first surface having a first
dimension that is less than the photolithographic limit; and a
structure changing material in contact with the first surface of
the first conductive material along a substantial portion of the
first dimension.
34. The method of using the memory device of claim 33, wherein the
memory device includes read circuitry for retrieving data from the
memory cells contained within the memory matrix.
35. The method of using the memory device of claim 33, wherein
retrieving data includes retrieving program instructions.
36. The method of using the memory device of claim 33, further
including storing the data in at least one of the plurality of
memory cells contained within the memory matrix.
37. The method of using the memory device of claim 36, wherein the
memory device includes write circuitry for storing the data in the
at least one of the plurality of memory cells contained within the
memory matrix.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 11/494,052, filed on Jul. 27, 2006, which is a
continuation of U.S. patent application Ser. No. 10/872,765, filed
on Jun. 21, 2004, which is a continuation of U.S. patent
application Ser. No. 09/740,256, filed Dec. 19, 2000, which is a
continuation of U.S. patent application Ser. No. 09/344,604, filed
Jun. 25, 1999, which is a divisional of U.S. patent application
Ser. No. 08/854,220, filed May 9, 1997.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates generally to semiconductor
fabrication techniques and, more particularly, to a method for
fabricating small electrodes for use with a chalcogenide switching
device, such as, for example, a chalcogenide memory cell.
[0004] 2. Background of the Related Art
[0005] This section is intended to introduce the reader to various
aspects of art which may be related to various aspects of the
present invention which are described and/or claimed below. This
discussion is believed to be helpful in providing the reader with
background information to facilitate a better understanding of the
various aspects of the present invention. Accordingly, it should be
understood that these statements are to be read in this light, and
not as admissions of prior art.
[0006] Microprocessor-controlled integrated circuits are used in a
wide variety of applications. Such applications include personal
computers, vehicle control systems, telephone networks, and a host
of consumer products. As is well known, microprocessors are
essentially generic devices that perform specific functions under
the control of a software program. This program is stored in a
memory device coupled to the microprocessor. Not only does the
microprocessor access a memory device to retrieve the program
instructions, it also stores and retrieves data created during
execution of the program in one or more memory devices.
[0007] There are a variety of different memory devices available
for use in microprocessor-based systems. The type of memory device
chosen for a specific function within a microprocessor-based system
depends largely upon what features of the memory are best suited to
perform the particular function. For instance, volatile memories,
such as dynamic random access memories (DRAMs), must be continually
powered in order to retain their contents, but they tend to provide
greater storage capability and programming options and cycles than
non-volatile memories, such as read only memories (ROMs). While
non-volatile memories that permit limited reprogramming exist, such
as electrically erasable and programmable "ROMs," all true random
access memories, i.e., those memories capable of 10.sup.14
programming cycles or more, are volatile memories. Although one
time programmable read only memories and moderately reprogrammable
memories serve many useful applications, a true nonvolatile random
access memory (NVRAM) would be needed to surpass volatile memories
in usefulness.
[0008] Efforts have been underway to create a commercially viable
memory device, which is both random access and nonvolatile, using
structure changing memory elements, as opposed to charge storage
memory elements used in most commercial memory devices. The use of
electrically writable and erasable phase change materials, i.e.,
materials which can be electrically switched between generally
amorphous and generally crystalline states or between different
resistive states while in crystalline form, in memory applications
is known in the art and is disclosed, for example, in U.S. Pat. No.
5,296,716 to Ovshinsky et al., the disclosure of which is
incorporated herein by reference. The Ovshinsky patent is believed
to indicate the general state of the art and to contain a
discussion of the general theory of operation of chalcogenide
materials, which are a particular type of structure changing
material.
[0009] As disclosed in the Ovshinsky patent, such phase change
materials can be electrically switched between a first structural
state, in which the material is generally amorphous, and a second
structural state, in which the material has a generally crystalline
local order. The material may also be electrically switched between
different detectable states of local order across the entire
spectrum between the completely amorphous and the completely
crystalline states. In other words, the switching of such materials
is not required to take place in a binary fashion between
completely amorphous and completely crystalline states. Rather, the
material can be switched in incremental steps reflecting changes of
local order to provide a "gray scale" represented by a multiplicity
of conditions of local order spanning the spectrum from the
completely amorphous state to the completely crystalline state.
[0010] These memory elements are monolithic, homogeneous, and
formed of chalcogenide material typically selected from the group
of Te, Se, Sb, Ni, and Ge. This chalcogenide material exhibits
different electrical characteristics depending upon its state. For
instance, in its amorphous state the material exhibits a higher
resistivity than it does in its crystalline state. Such
chalcogenide materials can be switched between numerous
electrically detectable conditions of varying resistivity in
nanosecond time periods with the input of picojoules of energy. The
resulting memory element is truly non-volatile. It will maintain
the integrity of the information stored by the memory cell without
the need for periodic refresh signals, and the data integrity of
the information stored by these memory cells is not lost when power
is removed from the device. The memory material is also directly
overwritable so that the memory cells need not be erased, i.e., set
to a specified starting point, in order to change information
stored within the memory cells. Finally, the large dynamic range
offered by the memory material theoretically provides for the gray
scale storage of multiple bits of binary information in a single
cell by mimicking the binary encoded information in analog form
and, thereby, storing multiple bits of binary encoded information
as a single resistance value in a single cell.
[0011] The operation of chalcogenide memory cells requires that a
region of the chalcogenide memory material, called the "active
region," be subjected to a current pulse to change the crystalline
state of the chalcogenide material within the active region.
Typically, a current density of between about 10.sup.5 and 1
amperes/cm.sup.2 is needed. To obtain this current density in a
commercially viable device having at least 64 million memory cells,
for instance, the active region of each memory cell must be made as
small as possible to minimize the total current drawn by the memory
device. Currently, chalcogenide memory cells are fabricated by
first creating a diode in a semiconductor substrate. A lower
electrode is created over the diode, and a layer of dielectric
material is deposited onto the lower electrode. A small opening is
created in the dielectric layer. A second dielectric layer,
typically of silicon nitride, is then deposited onto the dielectric
layer and into the opening. The second dielectric layer is
typically about 40 Angstroms thick. The chalcogenide material is
then deposited over the second dielectric material and into the
opening. An upper electrode material is then deposited over the
chalcogenide material.
[0012] A conductive path is then provided from the chalcogenide
material to the lower electrode material by forming a pore in the
second dielectric layer by a process known as "popping." Popping
involves passing an initial high current pulse through the
structure to cause the second dielectric layer to breakdown. This
dielectric breakdown produces a conductive path through the memory
cell. Unfortunately, electrically popping the thin silicon nitride
layer is not desirable for a high density memory product due to the
high current and the large amount of testing time required.
Furthermore, this technique may produce memory cells with differing
operational characteristics, because the amount of dielectric
breakdown may vary from cell to cell.
[0013] The active regions of the chalcogenide memory material
within the pores of the dielectric material created by the popping
technique are believed to change crystalline structure in response
to applied voltage pulses of a wide range of magnitudes and pulse
durations. These changes in crystalline structure alter the bulk
resistance of the chalcogenide active region. Factors such as pore
dimensions (e.g., diameter, thickness, and volume), chalcogenide
composition, signal pulse duration, and signal pulse waveform shape
may affect the magnitude of the dynamic range of resistances, the
absolute endpoint resistances of the dynamic range, and the
voltages required to set the memory cells at these resistances. For
example, relatively thick chalcogenide films, e.g., about 4000
Angstroms, result in higher programming voltage requirements, e.g.,
about 15-25 volts, while relatively thin chalcogenide layers, e.g.,
about 500 Angstroms, result in lower programming voltage
requirements, e.g., about 1-7 volts. Thus, to reduce the required
programming voltage, it has been suggested that the cross-sectional
area of the pore should be reduced to reduce the size of the
chalcogenide element.
[0014] The energy input required to adjust the crystalline state of
the chalcogenide active region of the memory cell is directly
proportional to the minimum lateral dimension of the pore. In other
words, programming energy decreases as the pore size decreases.
Conventional chalcogenide memory cell fabrication techniques
provide a minimum lateral pore dimension, e.g., the diameter or
width of the pore, that is limited by the photolithographic size
limit. This results in pore sizes having minimum lateral dimensions
down to approximately 1 micron.
[0015] The present invention is directed to overcoming, or at least
reducing the affects of, one or more of the problems set forth
above.
SUMMARY OF THE INVENTION
[0016] Certain aspects commensurate in scope with the originally
claimed invention are set forth below. It should be understood that
these aspects are presented merely to provide the reader with a
brief summary of certain forms the invention might take and that
these aspects are not intended to limit the scope of the invention.
Indeed, the invention may encompass a variety of aspects that may
not be set forth below.
[0017] In accordance with certain aspects of the present invention,
various devices and systems having a memory cell, as well as
methods of using such devices and systems, are provided. In some
embodiments, the memory cell includes a conductive material within
a pore of a dielectric layer. Further, the conductive material may
include a surface having a dimension below the photolithographic
limit. Additionally, various embodiments may also include a
structure changing material that is in contact with the surface of
the conductive material along a substantial portion of the
dimension that is less than the photolithographic limit.
[0018] In accordance with other aspects of the present invention,
methods of manufacturing a memory cell are provided. In one
embodiment, the method includes forming an access device on a
substrate, depositing a layer of dielectric material on the access
device, and forming a pore in the layer of dielectric material. In
some embodiments, the pore has a cross-sectional dimension that is
less than the photolithographic limit. Additionally, the method may
also include depositing: a first layer of conductive material
within the pore to form a first electrode substantially disposed
within the pore, a layer of structure changing material on the
first electrode, and a second layer of conductive material on the
layer of structure changing material to form a second
electrode.
DESCRIPTION OF THE DRAWINGS
[0019] The foregoing and other advantages of the invention may
become apparent upon reading the following detailed description and
upon reference to the drawings in which:
[0020] FIG. 1 illustrates a schematic depiction of a substrate
containing a memory device which includes a memory matrix and
peripheral circuitry;
[0021] FIG. 2 illustrates an exemplary schematic depiction of the
memory matrix or array of FIG. 1;
[0022] FIG. 3 illustrates an exemplary memory cell having a memory
element, such as a resistor, and an access device, such as a
diode;
[0023] FIG. 4 illustrates a top view of a portion of a
semiconductor memory array;
[0024] FIG. 5 illustrates a cross-sectional view of an exemplary
memory cell at an early stage of fabrication;
[0025] FIG. 6, FIG. 7, and FIG. 8 illustrate the formation of a
spacer and a small pore for the exemplary memory element;
[0026] FIG. 9 illustrates the small pore of the memory element;
[0027] FIG. 10 and FIG. 11 illustrate the formation of an electrode
in the small pore;
[0028] FIG. 12 illustrates the deposition of memory material over
the lower electrode;
[0029] FIG. 13 illustrates the deposition of the upper electrode of
the memory cell;
[0030] FIG. 14 illustrates the deposition of an insulative layer
and an oxide layer over the upper electrode of the memory cell;
and
[0031] FIG. 15 illustrates the formation of a contact extending
through the oxide and insulative layer to contact the upper
electrode.
DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS
[0032] One or more specific embodiments of the present invention
will be described below. In an effort to provide a concise
description of these embodiments, not all features of an actual
implementation are described in the specification. It should be
appreciated that in the development of any such actual
implementation, as in any engineering or design project, numerous
implementation-specific decisions must be made to achieve the
developers' specific goals, such as compliance with system-related
and business-related constraints, which may vary from one
implementation to another. Moreover, it should be appreciated that
such a development effort might be complex and time consuming, but
would nevertheless be a routine undertaking of design, fabrication,
and manufacture for those of ordinary skill having the benefit of
this disclosure.
[0033] Turning now to the drawings, and referring initially to FIG.
1, a memory device is illustrated and generally designated by a
reference numeral 10. The memory device 10 is an integrated circuit
memory that is advantageously formed on a semiconductor substrate
12. The memory device 10 includes a memory matrix or array 14 that
includes a plurality of memory cells for storing data, as described
below. The memory matrix 14 is coupled to periphery circuitry 16 by
the plurality of control lines 18. The periphery circuitry 16 may
include circuitry for addressing the memory cells contained within
the memory matrix 14, along with circuitry for storing data in and
retrieving data from the memory cells. The periphery circuitry 16
may also include other circuitry used for controlling or otherwise
insuring the proper functioning of the memory device 10.
[0034] A more detailed depiction of the memory matrix 14 is
illustrated in FIG. 2. As can be seen, the memory matrix 14
includes a plurality of memory cells 20 that are arranged in
generally perpendicular rows and columns. The memory cells 20 in
each row are coupled together by a respective word line 22, and the
memory cells 20 in each column are coupled together by a respective
digit line 24. Specifically, each memory cell 20 includes a word
line node 26 that is coupled to a respective word line 22, and each
memory cell 20 includes a digit line node 28 that is coupled to a
respective digit line 24. The conductive word lines 22 and digit
lines 24 are collectively referred to as address lines. These
address lines are electrically coupled to the periphery circuitry
16 so that each of the memory cells 20 can be accessed for the
storage and retrieval of information.
[0035] FIG. 3 illustrates an exemplary memory cell 20 that may be
used in the memory matrix 14. The memory cell 20 includes a memory
element 30 which is coupled to an access device 32. In this
embodiment, the memory element 30 is illustrated as a programmable
resistive element, and the access device 32 is illustrated as a
diode. Advantageously, the programmable resistive element may be
made of a chalcogenide material, as will be more fully explained
below. Also, the diode 32 may be a conventional diode, a zener
diode, or an avalanche diode, depending upon whether the diode
array of the memory matrix 14 is operated in a forward biased mode
or a reverse biased mode. As illustrated in FIG. 3, the memory
element 30 is coupled to a word line 22, and the access device 32
is coupled to a digit line 24. However, it should be understood
that connections of the memory element 20 may be reversed without
adversely affecting the operation of the memory matrix 14.
[0036] As mentioned previously, a chalcogenide resistor may be used
as the memory element 30. A chalcogenide resistor is a structure
changing memory element because its molecular order may be changed
between an amorphous state and a crystalline state by the
application of electrical current. In other words, a chalcogenide
resistor is made of a state changeable material that can be
switched from one detectable state to another detectable state or
states. In state changeable materials, the detectable states may
differ in their morphology, surface typography, relative degree of
order, relative degree of disorder, electrical properties, optical
properties, or combinations of one or more of these properties. The
state of a state changeable material may be detected by measuring
the electrical conductivity, electrical resistivity, optical
transmissivity, optical absorption, optical refraction, optical
reflectivity, or a combination of these properties. In the case of
a chalcogenide resistor specifically, it may be switched between
different structural states of local order across the entire
spectrum between the completely amorphous state and the completely
crystalline state.
[0037] The previously mentioned Ovshinsky patent contains a
graphical representation of the resistance of an exemplary
chalcogenide resistor as a function of voltage applied across the
resistor. It is not unusual for a chalcogenide resistor to
demonstrate a wide dynamic range of attainable resistance values of
about two orders of magnitude. When the chalcogenide resistor is in
its amorphous state, its resistance is relatively high. As the
chalcogenide resistor changes to its crystalline state, its
resistance decreases.
[0038] As discussed in the Ovshinsky patent, low voltages do not
alter the structure of a chalcogenide resistor, while higher
voltages may alter its structure. Thus, to "program" a chalcogenide
resistor, i.e., to place the chalcogenide resistor in a selected
physical or resistive state, a selected voltage in the range of
higher voltages is applied across the chalcogenide resistor, i.e.,
between the word line 22 and the digit line 24. Once the state of
the chalcogenide resistor has been set by the appropriate
programming voltage, the state does not change until another
programming voltage is applied to the chalcogenide resistor.
Therefore, once the chalcogenide resistor has been programmed, a
low voltage may be applied to the chalcogenide resistor, i.e.,
between the word line 22 and the digit line 24, to determine its
resistance without changing its physical state. As mentioned
previously, the addressing, programming, and reading of the memory
elements 20 and, thus, the application of particular voltages
across the word lines 22 and digit lines 24, is facilitated by the
periphery circuitry 16.
[0039] The memory cell 20, as illustrated in FIG. 3, may offer
significant packaging advantages as compared with memory cells used
in traditional random access and read only memories. This advantage
stems from the fact that the memory cell 20 is a vertically
integrated device. In other words, the memory element 30 may be
fabricated on top of the access device 32. Therefore, using the
memory cell 20, it may be possible to fabricate an X-point cell
that is the same size as the crossing area of the word line 22 and
the digit line 24, as illustrated in FIG. 4. However, the size of
the access device 32 typically limits the area of the memory cell
20, because the access device 32 must be large enough to handle the
programming current needed by the memory element 30.
[0040] As discussed previously, to reduce the required programming
current, many efforts have been made to reduce the pore size of the
chalcogenide material that forms the memory element 30. These
efforts have been made in view of the theory that only a small
portion of the chalcogenide material, referred to as the "active
region," is structurally altered by the programming current.
However, it is believed that the size of the active area of the
chalcogenide memory element 30 may be reduced by reducing the size
of an electrode which borders the chalcogenide material. By
reducing the active area and, thus, the required programming
current, the size of the access device may be reduced to create an
X-point cell memory. For example, a cell with a chalcogenide
cross-sectional area equivalent to a circle with a 0.2 .mu.m
diameter might require a current pulse of 2 mA to program to high
resistance state. If the diameter of the cell is reduced to 0.1
.mu.m the current could be reduced to about 0.5 mA. Over certain
ranges of operation the programming current is directly
proportional to the area of the cell.
[0041] The actual structure of an exemplary memory cell 20 is
illustrated in FIG. 15, while a method for fabricating the memory
cell 20 is described with reference to FIGS. 5-15. It should be
understood that while the fabrication of only a single memory cell
20 is discussed below, thousands of similar memory cells may be
fabricated simultaneously. Although not illustrated, each memory
cell is electrically isolated from other memory cells in the array
in any suitable manner, such as by the addition imbedded field
oxide regions between each memory cell.
[0042] In the interest of clarity, the reference numerals
designating the more general structures described in reference to
FIGS. 1-4 will be used to describe the more detailed structures
illustrated in FIGS. 5-15, where appropriate. Referring first to
FIG. 5, the digit lines 24 are formed in or on a substrate 12. As
illustrated in FIG. 5, the digit line 24 is formed in the P-type
substrate 12 as a heavily doped N+ type trench. This trench may be
strapped with appropriate materials to enhance its conductivity.
The access device 32 is formed on top of the digit line 24. The
illustrated access device 32 is a diode formed by a layer of N
doped polysilicon 40 and a layer of P+ doped polysilicon 42. Next,
a layer of insulative or dielectric material 44 is disposed on top
of the P+ layer 42. The layer 44 may be formed from any suitable
insulative or dielectric material, such as plasma enhanced CVD
SiOz, or PECVD silicon nitride or standard thermal CVD Sa3Ny.
[0043] The formation of a small pore in the dielectric layer 44 is
illustrated with reference to FIGS. 5-9. First, a hard mask 46 is
deposited on top of the dielectric layer 44 and patterned to form a
window 48, as illustrated in FIG. 6. The window 48 in the hard mask
46 is advantageously as small as possible. For instance, the window
48 may be formed at the photolithographic limit by conventional
photolithographic techniques. The photolithographic limit, i.e.,
the smallest feature that can be patterned using photolithographic
techniques, is currently about 0.2 .mu.m. Once the window 48 has
been formed in the hard mask 46, a layer of spacer material 50 is
deposited over the hard mask 46 in a conformal fashion so that the
upper surface of the spacer material 50 is recessed where the
spacer material 50 covers the window 48. Although any suitable
material may be used for the spacer material 50, a dielectric
material, such CVD amorphous or polycrystalline silicon, may be
advantageous.
[0044] The layer of spacer material 50 is subjected to an
anisotropic etch using a suitable etchant, such as HBr+Cl2. The
rate and time of the etch are controlled so that the layer of
spacer material 50 is substantially removed from the upper surface
of the hard mask 48 and from a portion of the upper surface of the
dielectric layer 44 within the window 48, leaving sidewall spacers
52 within the window 48. The sidewall spacers 52 remain after a
properly controlled etch because the vertical dimension of the
spacer material 50 near the sidewalls of the window 48 is
approximately twice as great as the vertical dimension of the
spacer material 50 on the surface of the hard mask 46 and in the
recessed area of the window 48.
[0045] Once the spacers 52 have been formed, an etchant is applied
to the structure to form a pore 54 in the dielectric layer 44, as
illustrated in FIG. 8. The etchant is an anisotropic etchant that
selectively removes the material of the dielectric layer 44 bounded
by the spacers 52 until the P+ layer 42 is reached. As a result of
the fabrication method to this point, if the window 48 is at the
photolithographic limit, the pore 54 is smaller than the
photolithigraphic limit, e.g., on the order of 0.1 .mu.m. After the
pore 54 has been formed, the hard mask 46 and the spacers 52 may be
removed, as illustrated in FIG. 9. The hard mask 46 and the spacers
52 may be removed by any suitable method, such as by etching or by
chemical mechanical planarization (CMP).
[0046] The pore 54 is then filled to a desired level with a
material suitable to form the lower electrode of the chalcogenide
memory element 30. As illustrated in FIG. 10, a layer of electrode
material 56 is deposited using collimated physical vapor deposition
(PVD). By using collimated PVD, or another suitable directional
deposition technique, the layer of electrode material 56 is formed
on top of the dielectric layer 44 and within the pore 54 with
substantially no sidewalls. Thus, the layer of electrode material
56 on top of the dielectric layer 44 may be removed, using CMP for
instance, to leave the electrode 56 at the bottom of the pore 54,
as illustrated in FIG. 11. It should be understood that the
electrode material 56 may be comprised of one or more materials,
and it may be formed in one or more layers. For instance, a lower
layer of carbon may be used as a barrier layer to prevent unwanted
migration between the subsequently deposited chalcogenide material
and the P+ type layer 42. A layer of titanium nitride (TiN) may
then be deposited upon the layer of carbon to complete the
formation of the electrode 56.
[0047] After the lower electrode 56 has been formed, a layer of
chalcogenide material 58 may be deposited so that it contacts the
lower electrode 56, as illustrated in FIG. 12. Various types of
chalcogenide materials may be used to form the chalcogenide memory
element 30. For example, chalcogenide alloys may be formed from
tellurium, antimony, germanium, selenium, bismuth, lead, strontium,
arsenic, sulfur, silicon, phosphorous, and oxygen. Advantageously,
the particular alloy selected should be capable of assuming at
least two generally stable states in response to a stimulus, for a
binary memory, and capable of assuming multiple generally stable
states in response to a stimulus, for a higher order memory.
Generally speaking, the stimulus will be an electrical signal, and
the multiple states will be different states of crystallinity
having varying levels of electrical resistance. Alloys that may be
particularly advantageous include tellurium, antimony, and
germanium having approximately 55 to 85 percent tellurium and 15 to
25 percent germanium, such as Te56Ge22Sb22.
[0048] If the lower electrode 56 is recessed within the pore 54, a
portion of the chalcogenide material 58 will fill the remaining
portion of the pore 54. In this case, any chalcogenide material 58
adjacent the pore 54 on the surface of the dielectric layer 44 may
be removed, using CMP for instance, to create a chalcogenide
element of extremely small proportions. Alternatively, if the lower
electrode 56 completely fills the pore 54, the chalcogenide
material 58 adjacent the pore 54 may remain, because the extremely
small size of the lower electrode 56 still creates a relatively
small active area in a vertical direction through the chalcogenide
material 58. Because of this characteristic, even if the lower
electrode 56 only partially fills the pore 54, as illustrated, the
excess chalcogenide material 58 adjacent the pore 54 need not be
removed to create a memory element 30 having an extremely small
active area.
[0049] Regardless of which alternative is chosen, the upper
electrode 60 is deposited on top of the chalcogenide material 58,
as illustrated in FIG. 13. After the upper electrode 60, the
chalcogenide material 58, the dielectric layer 44, and the access
device 32 have been patterned and etched to form an individual
memory cell 20, a layer of insulative material 62, such as silicon
nitride, is deposited over the structure, as illustrated in FIG.
14. A layer of oxide 64 is then deposited over the insulative layer
62. Finally, the oxide layer 64 is patterned and a contact hole 66
is formed through the oxide layer 64 and the insulative layer 62,
as illustrated in FIG. 15. The contact hole 66 is filled with a
conductive material to form the word line 22.
[0050] While the invention may be susceptible to various
modifications and alternative forms, specific embodiments have been
shown by way of example in the drawings and have been described in
detail herein. However, it should be understood that the invention
is not intended to be limited to the particular forms disclosed.
Rather, the invention is to cover all modifications, equivalents,
and alternatives falling within the spirit and scope of the
invention as defined by the following appended claims.
* * * * *