U.S. patent application number 11/849026 was filed with the patent office on 2008-03-06 for optical transmission filter with extended out-of-band blocking.
Invention is credited to Jay Anzellotti, Turan Erdogan, Joseph T. Foss, Atul Pradhan, Ligang Wang.
Application Number | 20080055584 11/849026 |
Document ID | / |
Family ID | 39151019 |
Filed Date | 2008-03-06 |
United States Patent
Application |
20080055584 |
Kind Code |
A1 |
Pradhan; Atul ; et
al. |
March 6, 2008 |
OPTICAL TRANSMISSION FILTER WITH EXTENDED OUT-OF-BAND BLOCKING
Abstract
In accordance with the invention, a filter is fabricated by a
modified form of the process disclosed in U.S. Pat. No. 7,068,430.
In particular, the method is modified to take into account the
effect of absorption by filter material. The method is exemplified
by the fabricating of an ultraviolet light transmission filter for
transmitting a band within the range 230-320 nanometers. The
resulting filter comprises plurality of hard-coating, thin-film
layers of alternating high and low index of refraction. The
improved filter provides high transmission, sharp edge slopes, and
deep and extended out-of-band blocking. As compared with currently
available filters, the filter provides transmission up to three or
more times greater, edge slopes up to four times sharper, and deep
extended out-of-band blocking extending further, even through the
visible range.
Inventors: |
Pradhan; Atul; (Pittsford,
NY) ; Anzellotti; Jay; (Rochester, NY) ; Foss;
Joseph T.; (Rochester, NY) ; Wang; Ligang;
(Rochester, NY) ; Erdogan; Turan; (Spencerport,
NY) |
Correspondence
Address: |
POLSTER, LIEDER, WOODRUFF & LUCCHESI
12412 POWERSCOURT DRIVE SUITE 200
ST. LOUIS
MO
63131-3615
US
|
Family ID: |
39151019 |
Appl. No.: |
11/849026 |
Filed: |
August 31, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60841551 |
Sep 1, 2006 |
|
|
|
60841552 |
Sep 1, 2006 |
|
|
|
60875359 |
Dec 18, 2006 |
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Current U.S.
Class: |
356/51 ;
359/359 |
Current CPC
Class: |
G01N 2021/6471 20130101;
G01J 2003/1213 20130101; G01J 3/4406 20130101; G01J 3/10 20130101;
G02B 5/283 20130101 |
Class at
Publication: |
356/051 ;
359/359 |
International
Class: |
F21V 9/04 20060101
F21V009/04; G01J 3/00 20060101 G01J003/00 |
Claims
1. An optical bandpass filter for transmitting a passband of
ultraviolet light comprising: a substrate having one or more
surfaces for supporting thin film coatings; a plurality of
alternating layers of at least two hard-coating materials of higher
refractive index and lower refractive index overlying at least one
of the surfaces to form a transmission filter wherein; the passband
of the filter is a band of ultraviolet light within the range of
230 nanometers to 320 nanometers, with an average transmission of
light over the passband exceeding 40% and an average optical
density at all wavelengths over the range 230 to 600 nanometers of
at least 3.0.
2. The bandpass filter of claim 1 wherein the alternating layers
form a long wave pass interference filter component and a short
wave pass interference filter component.
3. The bandpass filter of claim 1 wherein the long wave pass filter
component and the short wave pass filter component overlie opposing
surfaces of the substrate.
4. The bandpass filter of claim 1 wherein the long wave pass filter
component and the short wave pass filter component overlie the same
surface of the substrate.
5. The bandpass filter of claim 1 wherein the plurality of
alternating layers on at least one surface forms a multi-cavity
Fabry-Perot transmission filter.
6. The bandpass filter of claim 1 wherein the optical density of
the average transmission at all wavelengths over the range 320 to
700 nm is at least 4.0.
7. The bandpass filter of claim 2 wherein the long wave pass
interference filter component comprises alternating layers of
silica and hafnia.
8. The bandpass filter of claim 2 wherein the short wave pass
interference filter component comprises alternating layers of
silica and hafnia.
9. The bandpass filter of claim 2 wherein the interference filters
are composed of hafnia (HfO2) material layers exhibiting a
stoichiometric ratio of atomic oxygen to atomic hafnium given as
N(O)/N(Hf)>2.
10. The bandpass filter of claim 2 wherein the interference filters
are composed of hafnia (HfO2) material layers exhibiting a
stoichiometric ratio of atomic oxygen to hydroxide (OH) as
N(O)/N(OH)<1.6.
11. In an optical analysis system comprising a source of excitation
light for exciting a sample, an excitation filter between the
source and the sample, and a collection light path from the sample;
the improvement wherein the light source comprises an ultraviolet
light source and the excitation filter comprises a filter according
to claim 1.
12. A method of making an optical bandpass filter for transmitting
a band of light with extended out-of-band blocking comprising:
providing a substrate having one or more surfaces; forming on one
or more of the surfaces a transmission filter each comprising
alternating layers of at least two hard coating materials of higher
refractive index and lower refractive index; each of the layers
deposited by a data processor controlled process comprising:
calculating with the data processor, a theoretical transmission
T.sub.i of light through the layer, calculating with the data
processor an expected deposition time t.sub.i of the layer,
measuring during the deposition of the layer for a period of time
less than t.sub.i a measured transmission T.sub.m of light through
the layer, determining with the data processor when deposition of
the layer is to terminate based upon the theoretical transmission
T.sub.i and the measured transmission T.sub.m; and wherein the
calculation of t.sub.i and T.sub.i accounts for absorption by the
layer by the relation of Equations (9) thru (14) herein.
13. The method of claim 12 wherein the alternating layers form a
long wave pass filter component and a short wave pass filter
component.
14. The method of claim 12 wherein the alternating layers form a
multi-cavity Fabry-Perot filter.
15. The method of claim 12 wherein the at least two deposited
materials include silica and hafnia.
16. The method of claim 13 wherein the silica and hafnia are
deposited by sputtering.
17. The method of claim 15 wherein the silica is deposited by ion
beam assisted sputtering and the hafnia is deposited by sputtering
without ion beam assistance.
18. The method of claim 15 wherein the sputtering is conducted in
an O.sub.2 ambient with the flow of O.sub.2 chosen to reduce UV
light absorption by the deposited layers.
19. An optical bandpass filter for transmitting a passband of light
comprising: a substrate having one or more surfaces for supporting
thin film coatings; a first interference filter overlying one of
the surfaces of the substrate comprising alternating layers of at
least two materials of higher refractive index and lower refractive
index to form a bandpass characteristic; a second interference
filter overlying one of the surfaces of the substrate comprising
alternating layers of at least two materials of higher refractive
index and lower refractive index to form blocking in addition to
that provided by the first bandpass characteristic interference
filter; wherein: the passband of the filter is a band of
ultraviolet light within the range of 230 nanometers to 320
nanometers, with an average transmission of light over the passband
exceeding 40%; the average optical density at all wavelengths over
the range 230 to 840 nm is at least 3.0; the substrate is
substantially transparent to ultraviolet light; the first and
second interference filters comprise hard coatings and non-metals
that are substantially transparent to ultraviolet light and
cooperate to substantially block light with wavelengths outside the
passband over a range that includes visible wavelengths.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Ser.
No. 60/841,551 filed Sep. 1, 2006 and entitled Optically
Transmitting Filters in the Wavelength Region of 230-320 nm., U.S.
Provisional application Ser. No. 60/841,552 filed Sep. 1, 2006 and
entitled Single-Coating Fluorescence Filter And Three-Coating
Filter Set, and U.S. Provisional application Ser. No. 60/875,359
filed Dec. 18, 2006 and entitled Optically Transmitting Filter in
Wavelength Region of 230-320 nm with Extended Blocking. The '359,
'551 and '552 applications are each incorporated herein by
reference.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
[0002] Not Applicable.
FIELD OF THE INVENTION
[0003] This invention relates to optical transmission filters and,
in particular, to methods of making improved transmission filters
and the resulting improved products and improved equipment that
they permit. The invention is particularly useful for filters, such
as ultraviolet light filters, for which completely transparent
filter materials are not available.
BACKGROUND OF THE INVENTION
[0004] Optical transmission filters are useful in a wide variety of
applications including spectroscopy and fluorescence microscopy.
Filters are used in these applications to block unwanted light that
would otherwise manifest as spurious light that could swamp the
signals to be detected or distort the images to be seen.
[0005] Optical transmission filters typically transmit a desired
range of wavelengths (referred to as a transmission band) and block
wavelengths outside the transmission band (out-of-band
wavelengths). Ideally they would transmit all light within a
desired band and block all light outside the band. In reality,
in-band transmission incurs some attenuation and out-of-band
blocking is incomplete. Moreover, the spectral extent of blocking
is limited, i.e. blocking may substantially diminish for light of
wavelengths not far removed from the transmission band.
[0006] Referring to the drawings, FIG. 1A schematically illustrates
the spectral transmission of an ideal optical transmission filter.
An ideal filter would transmit all light having wavelengths within
a band between a low wavelength .lamda.L and a high wavelength
.lamda.H (the Transmission, T, is equal to 1). An ideal filter
would block all light outside the band (T=0). .lamda..sub.L and
.lamda..sub.H are the wavelengths at which the filter transitions
between blocking and transmitting.
[0007] Real filters invariably block a small portion of the light
to transmitted (T<1) and transmit a small portion of the light
to be blocked (T>0). Moreover, the blocking may become less
effective for wavelengths spectrally away from the transmission
band. These properties are schematically illustrated in FIG. 1B
showing the effect of a filter with less than perfect transmission,
finite transition regions, less than perfect blocking, and
out-of-band transmission. The proportion of light transmitted, the
steepness of the transition lines and the extent of the blocking
are important parameters in many applications.
[0008] Transmission filters are particularly important in optical
measurement and analysis systems. Some such systems, e.g.
fluorescence systems, use light of one wavelength to excite a
sample of material and then measure or view an optical response of
the excited sample at another wavelength. The excitation light is
delivered to the sample by an excitation light path, and the
optical response of the sample is delivered to the eye or measuring
instrument by a collection path. Transmission filters between the
source and the sample can be used to block spurious light from the
excitation path. The steeper the filter transition lines, the more
effectively spurious signals are blocked. The lower the
transmission loss, the more light from the desired excitation band
reaches the sample. Moreover, if the optical response being
measured differs considerably in wavelength from the excitation
light, the transmission filter needs extended out-of-band blocking
to prevent transmission of spurious light that can scatter into the
collection path.
[0009] UV fluorescence spectroscopy is based on the fact that when
some materials are excited by ultraviolet light (light that is
composed of wavelengths too short to be visible) they respond by
the emission of near-UV and/or visible light ("fluorescent light").
In such apparatus it is important that the UV excitation path not
transmit visible light that can also be transmitted as a spurious
signal through the collection path.
[0010] FIG. 2 is a simplified schematic diagram of a UV probe 20
designed to excite a sample 21 by UV light and to collect visible
fluorescent light from the sample. In essence, the probe comprises
a UV source 22, an excitation path 23 for transmitting the UV light
to the sample 21 and a collection path 24 for transmitting the
fluorescent response light from the sample 21 to a detector 25. The
excitation path 23 for UV light ideally transmits only UV light
that will excite specific materials ("markers") in the sample. In
reality, UV light sources may include or can generate spurious
visible light by a number of mechanisms. The spurious visible light
can scatter off the sample 21 into the collection path 24 to the
detector.
[0011] Absorption spectroscopy is another optical analysis
technique used in identifying materials and quantifying
concentrations. In absorption spectroscopy light of one or more
discrete bandwidths is transmitted through a first path and through
a sample. Light from the illuminated sample is transmitted through
a collection path to a detector that can measure the amount of
light the sample absorbed. The amount of absorption provides
information regarding the identity of unknown materials or the
concentration of known materials. Spurious light through the first
path can provide incorrect or inaccurate results.
[0012] It should be clear that the steeper the filter slope at the
transition wavelengths .lamda..sub.L, .lamda..sub.H, the greater
the amount of unwanted light that can be filtered out, avoiding
spurious results. The greater the in-band transmission of the
filter, the greater the input of desired light. And the greater the
extent of out-of-band blocking, the less spurious light at the
output to interfere with measurement or viewing.
[0013] Systems using UV excitation light, particularly UV bands in
the wavelength range 230 to 320 nanometers, are particularly
useful. The term "bands within the wavelength range" as used herein
is intended to include smaller wavelength bands included within the
range, e.g. 250-270 nanometers, as well as bands that encompass the
range, e.g. 220-325 nanometers. Bands within the 230-320 wavelength
range have attained prominence for use in biomedical applications
as diverse as drug discovery, genomics and proteomics, immunology,
chemical process tracing and threat biodetection. UV bands in this
range are highly useful in the fluorescent detection of
nucleotides, proteins and enzymatic molecules.
[0014] Unfortunately existing filters and equipment leave much to
be desired for bands within the 230 to 320 nanometer range. Few
commercial filters are available in the range, and none provide the
combination of high transmission, steep edge slopes and deep,
extended out-of-band blocking needed for high performance detection
and measurement.
[0015] Typical commercial filters are metal-dielectric filters and
soft-coating thin film filters. Metal-dielectric filters provide
relatively low transmission: typically only 10-30%. The
low-transmission in such filters is inherent because transmission
performance is inversely related with achievable blocking.
[0016] "Soft-coating" thin-film filters, as well as those that
achieve partial blocking using colored absorbing glasses, are not
suitable for high intensity light sources in the 230-320 nanometer
range. In the UV range, soft-coating materials suffer from severe
reliability, durability and spectral stability issues. Even
moderate amounts of illumination by high intensity UV sources can
cause soft coatings and colored substrates to "burn out", solarize
or photodarken.
[0017] A new approach to making highly discriminating optical
filters and the resulting improved products are disclosed in U.S.
Pat. No. 7,068,430 which is incorporated herein by reference. This
approach offers considerable promise for application to filters for
the visible range where essentially transparent materials are
available. The present invention is an extension and modification
of the '430 method to produce advantageous filters for shorter
wavelengths where completely transparent materials are not
available.
SUMMARY OF THE INVENTION
[0018] In accordance with the invention, a filter is fabricated by
a modified form of the process disclosed in U.S. Pat. No.
7,068,430. In particular, the method is modified to take into
account the absorption of short wavelengths by filter material. The
method is exemplified by the fabricating of an ultraviolet light
transmission filter for transmitting a band within the range
230-320 nanometers. The resulting filter comprises plurality of
hard-coating, thin-film layers of alternating high and low index of
refraction. The improved filter provides higher transmission,
sharper edge slopes, and deeper and extended out-of-band blocking.
As compared with currently available filters, the filter provides
transmission up to three or more times greater, edge slopes up to
four times sharper, and deep out-of-band blocking extending into
and even through the visible range.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The advantages, nature and various additional features of
the invention will appear more fully upon consideration of the
illustrative embodiments now to be described in detail in
connection with the accompanying drawings. In the drawings:
[0020] FIGS. 1A and 1B are schematic illustrations of the spectral
transmission of ideal and real optical transmission filter;
[0021] FIG. 2 is a simplified schematic diagram of a UV probe to
excite and collect optical fluorescence from a sample;
[0022] FIG. 3 schematically illustrates an improved optical
transmission filter
[0023] FIG. 4 is a schematic view of a computer-controlled
deposition apparatus useful in making filters;
[0024] FIG. 5 is a process flow chart for making the long-wave pass
component of a filter;
[0025] FIG. 6 is a process flow chart for making the short-wave
pass component;
[0026] FIG. 7 is a graphical illustration of the theoretical and
measured transmission spectra of a exemplary filter;
[0027] FIG. 8 illustrates the optical density spectrum of the
exemplary filter; and
[0028] FIG. 9 is a table giving the index of refraction for HfO2 at
wavelengths of interest.
[0029] It is to be understood that these drawings are for purposes
of illustrating the concepts of the invention and, except for data
graphs, are not to scale.
DETAILED DESCRIPTION OF THE INVENTION
[0030] Referring to the drawings, FIG. 3 schematically illustrates
an improved optical transmission filter. The filter 30 comprises a
substrate 31 having one or more surfaces 32 and 33 for supporting
thin film hard coatings. The support surfaces 32, 33 are typically
opposing optically smooth, planar major surfaces of a thin
substrate. The hard coatings forming the transmission filter (e.g.
interference filter components 34, 35) can overlie respective
surfaces 32, 33 or they can both overlie the same surface. See U.S.
Provisional Patent Application 60/841,552 incorporated herein by
reference. In the embodiment illustrated a first interference
filter component 34 is disposed overlying a first surface 32 and a
second interference filter component 35 is disposed overlying the
second surface 33. The first filter component 34 comprises
alternating layers 34A, 34B of at least two materials of relatively
higher refractive index (34A) and relatively lower refractive index
(34B), respectively, to form a long wavelength pass filter
component that transmits the passband wavelengths but blocks
wavelengths below the passband. The second filter component 35
comprises alternating layers 35A, 35B of at least two materials of
relatively higher refractive index (35A) and relatively lower
refractive index (35B) to form a short wavelength pass filter
component that transmits the passband wavelength but blocks
wavelengths above the passband. The first and second filter
components thus cooperate to transmit light within the passband and
to block light outside the passband. One or both of the materials
may be materials that absorb small, but not negligible, amounts of
light within the passband wavelengths.
[0031] In a preferred embodiment, the filter 30 has a passband of
ultraviolet light within the range of 230 nanometers to 320
nanometers. The substrate 31 is substantially transparent to
ultraviolet light, and the first and second interference filters
34, 35 comprise hard coatings of non-metals that may absorb small
amounts of ultraviolet light. Typically, the filters 34, 35 each
comprise 30 or more alternating layer pairs. The substrate is
advantageously fused silica or calcium fluoride, and the coatings
preferably comprise alternating layers of silica and hafnia.
[0032] The improved filters described herein are advantageously
made by a data processor-controlled deposition system. The
preferred deposition system is an ion beam sputtering deposition
system using an ion beam assist source for depositing hard coatings
combined with an integral optical monitoring system for monitoring
deposition. A data processor, responsive to signals from the
monitoring system, processes the signals and directs the growth of
the layers.
[0033] FIG. 4 is a schematic view of an advantageous data
processor-controlled deposition apparatus 400 for making the filter
by ion beam sputtering disposition with optical monitoring under
data processor control. The apparatus 400 comprises a vacuum
chamber 401 having an interior accessible by a sealable port 402
such as an o-ring sealed door. The chamber 401 includes a pump port
402 for coupling to one or more evacuating pumps (not shown) such
as mechanical and low pressure cryogenic pumps.
[0034] Within the chamber 401 is a substrate mount 403 which is
advantageously a rotatable spindle mount. Also within the chamber
are a plurality of material targets, a deposition ion beam source
404, and a mounted substrate 405. One of the targets 406 is
positioned in relation to the ion beam source and the substrate so
that an ion beam from the source will sputter material from the
target onto the substrate in a substantially uniform layer.
Typically there are separate targets for each material to be
deposited on the substrate, and the targets are moveable to and
from the sputtering position. There are usually two material
targets: one for depositing a high optical index material, such as
hafnia (HfO2), and the other for depositing a low index material,
such as silica (SiO2). The targets are moveable so that deposition
can be switched automatically from one material to the other. An Hf
metal target can be used during the hafnia deposition and is
preferably chosen to have Zr contamination of less than 0.8%.
[0035] An assist ion beam source 407 is disposed in the chamber 401
in position to bombard the substrate 405 with an ion beam. Normally
during the deposition of any one material, the substrate is
simultaneously bombarded by sputtered material and by ions from the
assist ion beam source 407. See J. M. E. Harpe et al.,
"Modification of Thin Film Properties by Ion Bombardment During
Deposition," in Ion Bombardment Modification of Surfaces, Ed. By O.
Auciello and R. Kelly, from Beam Modification of Material, Vol. 1
(Elsevier, Amsterdam, 1984).
[0036] In the preferred embodiment of this invention using hafnia
and silica, the assist ion beam is turned off during the deposition
of hafnia (HfO.sub.2) and turned on during the deposition of silica
(SiO.sub.2). The use of the assist beam during hafnia (HfO.sub.2)
deposition results in films with undesirably high crystallinity,
absorption (due to hafnia layers with extinction coefficient
>1.times.10.sup.-3), and scatter. We have further found that an
important factor for reducing the UV extinction in thin films of
both hafnia and silica is the regulation of flow of O.sub.2 into
the deposition chamber. The rate of O.sub.2 injection during
deposition determines the stoichiometry of the hafnia and silica
layers. In particular, the formation of HfO.sub.2 in the hafnia
layer from Hf metal precursor atoms and O.sub.2 molecules has a
profound effect on the absorption characteristics of the film. The
optimum stoichiometry is achieved with a flow of 12 sccm of O.sub.2
of which 6 sccm are from the target O.sub.2, and 6 sccm from the
ion source. These flow settings achieve hyperstoichiometric hafnia
thin films with reduced UV absorption.
[0037] Both the sputter deposition and the assist bombardment can
be activated by a deposition control system 408. The control system
408 can start or stop deposition precisely by turning on and off
the deposition ion beam source 404 or by removing or engaging a
mechanical shutter (not shown) that covers the substrate. Further
details concerning ion beam sputtering deposition systems can be
found in U.S. Pat. No. 4,142,958 issued to David Wei et al. on Mar.
6, 1979 and U.S. Pat. No. 4,793,908 issued to Gene Scott et al. on
Dec. 27, 1988, both of which are incorporated herein by reference.
See also Juergen Becker, "Ion Beam Sputtering," Handbook of Optical
Properties, Vol. 1, Thin Films for Optical Coatings, Ed., by R. E.
Hummel and K. H. Guenther (CRC Press, Boca Raton, 1995).
[0038] The above depositional process produces low absorption
hafnia layers. The hafnia (HfO.sub.2) material layers exhibit a
small extinction coefficient of <5.times.10.sup.-4 leading to
low absorption. This low extinction coefficient correlates with a
realized O (Oxygen) to Hafnium (Hf) atomic ratio greater than 2.0
(hyperstoichiometry) in the hafnia layers.
[0039] It is believed that the presence of excess oxygen in the
hyperstoichiometric hafnia (HfO2) reduces optical absorption by
quenching dangling bonds in the amorphous-crystalline hafnia (HfO2)
layer mixture. Such hyperstoichiometry (N(O)/N(Hf)=2.16) in hafnia
layers is also confirmed by a low oxygen to hydroxide ratio (in
this case N(O)/N(OH)=1.37) since a correlation of
hyperstoichiometry with a oxygen/hydroxide ratio is reported in a
previous E-beam evaporated hafnia thin-film study (Optical and
Microstructural Properties of Hafnium Dioxide Thin Films, J. P.
Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod, Thin Solid Films,
203 (1991) pp 227-250).
[0040] In the advantageous arrangement shown here, a beam splitter
415 picks off a portion 416 of the monitoring light beam 417 from
source 409 and detects it with reference detector 412. The signal
detector 413 detects the portion 418 of the beam 417 that passes
through the coated substrate (or a "witness" substrate) being
monitored. Advantageously, the filters 411A and 411B are positioned
to ensure that a sufficiently narrow band of wavelengths is
monitored.
[0041] The filters 411A, 411B can be narrow band interference
filters, adjustable diffraction-grating monochromators or
combinations thereof. Further details concerning optical monitoring
of thin films as they are being deposited can be found in U.S. Pat.
No. 6,649,208 issued to Wayne Rodgers on Nov. 18, 2003, which is
incorporated herein by reference. See also H. Angus Macleod, Thin
Film Optical Filters (3.sup.rd Ed., Institute of Physics, Bristol,
2001) and H. A. Macleod, "Turning Value Monitoring of Narrow-Band
All-Dielectric Thin-Film Optical Filters," Optica Acta. Vol. 19,
pp. 1-28 (1972).
[0042] The data processor 414 collects data from the signal and
reference detectors 413, 412, implements the mathematics associated
with optical monitoring algorithms and instructs the deposition
control system 408 when to stop depositing any given thin film
layer based on the result of the mathematical calculations
prescribed by algorithm.
[0043] The manner in which the data processor 414 controls the
apparatus 400 via the deposition control system 408 to generate the
optical filters according to the present invention will now be
described. In particular, the data processor 414 is programmed to
instruct the apparatus 400 when to stop depositing each layer of
the optical filter being manufactured. The data processor 414
follows two separate processes in determining when a deposition of
a layer should terminate depending upon whether a long-wave-pass
component or a short-wave-pass component is being manufactured.
These two processes will be described in turn.
[0044] FIG. 5 illustrates the process flow executed by the data
processor 414 when manufacturing a long-wave-pass ("LWP") filter
component. However, prior to initiating the process of FIG. 5, a
design for the LWP filter is prepared. In the exemplary embodiment,
the LWP filter has N layers (typically N.gtoreq.30) and comprises
at least two materials: a relatively lower-refractive-index
material and a relatively higher-refractive-index material. The
exemplary initial design for a steep LWP edge filter includes a
quarter-wave ("QW") stack of (0.5H L 0.5H) N where L and H
represent layers of high and low index materials with a
quarter-wave of optical thickness at the reference wavelength. The
reference wavelength is chosen so that the longer-wavelength edge
of the QW stopband is close to the desired transition wavelength of
the LWP filter component.
[0045] Once the initial design is setup, a desired target spectrum
is constructed, which typically includes the wavelength ranges of
both the blocking and passband regions, as well as the required
blocking level and minimum transmission and allowable ripple within
the passband. The edge steepness is thus indirectly defined as the
wavelength separation between the blocking region and the
passband.
[0046] The layer thicknesses of the initial design are then
optimized against the target spectrum by an optimization routine
known in the art. Exemplary optimization routines include the
variable-metric or simplex methods implemented in standard
commercial thin-film design software packages, such as TFCalc by
Software Spectra, Inc., and The Essential Macleod by Thin Film
Center Inc. Usually, with the proper choice of the initial design,
the optimization quickly converges and the optimized structure is
not very different from the initial structure. Special treatments
are required for the first layer (toward substrate) and the last
layer. The metric thickness of the first layer should be required
to meet a minimum thickness threshold, typically 10 nm, in order
for robust control by the optical monitoring algorithm. As for the
last layer, it sometimes becomes too thin and, consequently, should
be eliminated. The structure should be re-optimized whenever there
is any modification to the layer thickness.
[0047] In preparing the initial design of the long wave pass filter
component, it is important to take into consideration the effect of
fabrication conditions on the applied layers. The indices of
refraction of the applied materials, particularly in UV long wave
pass filters, are functions of temperature, pressure and thermal
treatment. Here the materials are coated on a substrate typically
held at an elevated temperature (roughly 150.degree. C.) in a near
vacuum atmosphere. Moreover the deposited materials are, after
deposition, typically finished by annealing (baking) them at an
elevated temperature for several hours--typically 425.degree. C.
for 2-4 hours. The result is that the index after fabrication is
different than the index during fabrication. In general, this
difference is very small for coatings used in visible light filters
and can usually be ignored as negligible. But in UV filters the
difference is somewhat larger and should be considered in the
initial design, as it affects the optical monitoring process during
filter fabrication. Specifically, the coating indices during
fabrication should be targeted so that the final indices after
deposition, annealing and cooling will be indices desired.
[0048] In making the present filters HfO2 is the material most
sensitive to fabrication conditions. The correlation at different
wavelengths between the index during deposition ("in situ") and the
index at room temperature after annealing is given in the Table set
forth as FIG. 9. The indices are specified as complex indices of
refraction with the "real part" being the Refractive index and the
"imaginary part" being the extinction coefficient. Values for
wavelengths not listed may be determined sufficiently accurately by
interposition. The variation of the index for SiO2 is not
significant for this filter.
[0049] In application, the design created uses the after annealing
index values. The calculations that are part of the fabrication
monitoring process use the "in situ" values so that the end result
is in accordance with the design.
[0050] With the LWP filter design at hand, the data processor 414
receives design data and deposition rate data as input at 501. The
design data describes the designed thin-film structure of the LWP
filter with a physical thickness d.sub.i and an index n.sub.i for
each i.sup.th layer. n.sub.1 is either n.sub.L, or n.sub.H, where
n.sub.L is the refractive index of the low-index material and
n.sub.H is the refractive index of the high-index material. n.sub.L
and n.sub.H are each known as a function of wavelength .lamda.. The
deposition rate data describes the known starting deposition rate
of the deposition apparatus 400 shown in FIG. 4 for each of the two
materials. In the exemplary embodiment, the deposition rate data is
within about +/-5% of the actual deposition rate and is in units of
.ANG./sec. The starting rate estimates for each of the two
materials are referred to as r.sub.L and r.sub.H, and hence each
layer will have a starting rate estimate r.sub.i depending on
whether it is made of low-index or high-index material.
[0051] At 502, the transmission T.sub.i, as a function of physical
thickness d for each/h layer is calculated at a series of
wavelengths in the transmissive band of the finished filter.
Consequently, the calculations at 502 result in a series of curves
T.sub.i vs. d at each of the series of wavelengths in the
transmissive band of the finished filter. Such calculations are
performed using standard mathematical methods for calculating the
optical properties of thin-film filters. See, for example, H. A.
Macleod, Thin-film Optical Filters, 3.sup.rd edition (Institute of
Physics, Bristol, 2001).
[0052] Advantageously, instead of calculating each T. vs. d curve
at one corresponding wavelength in the series of wavelengths, each
T. vs. d curve is calculated by averaging a plurality of T.sub.i
vs. d curves calculated at a range of wavelengths surrounding the
corresponding wavelength. For instance, assume that the series of
wavelengths includes 241 nm and 242 nm. Instead of calculating a
T.sub.i vs. d curve at just 241 nm, this T.sub.i vs. d curve is
advantageously calculated by averaging T.sub.i vs. d curves
calculated at, for instance, 240 nm, 241 nm, and 242 nm. Further,
the T.sub.i vs. d curve at 242 nm is advantageously calculated by
averaging T.sub.i vs. d curves calculated at, for instance, 241 nm,
242 nm, and 243 nm. One skilled in the art will appreciate that
invention is not limited to this averaging procedure and the range
of wavelengths used.
[0053] At 503, an optical monitoring wavelength .lamda..sub.m is
selected from the series of wavelengths in the transmissive band of
the finished filter, thereby identifying a single curve T.sub.i vs.
d at .lamda..sub.m, from the series of curves computed at 502. The
monitoring wavelength .lamda..sub.m, is determined based on the
contrast of the monitoring signal within each layer. The contrast
is defined as the relative range of the monitoring signal within
the layer of interest. The higher the contrast, the more robust the
process flow of FIG. 5 will be with respect to random signal
noise.
[0054] Advantageously, the relative separation between the
monitoring and cutoff wavelengths should be at least about 2%. Once
above 2%, the monitoring wavelength .lamda..sub.m should be chosen
to maximize the contrast of each layer. In addition, the optical
thickness of the first layer toward the substrate has a significant
impact on the signal contrast for the rest of the coating.
Therefore, the optical thickness of the first layer should be close
to three quarter-wavelengths at the monitoring wavelength
.lamda..sub.m.
[0055] Having determined the monitoring wavelength .lamda..sub.m,
at 503, processing advances to 504 where it is determined how the
deposition duration for each layer will be calculated. For layers
that are predicted to have little error between the designed
thickness d and a simulated actual thickness, deposition duration
is controlled by optically monitoring transmission levels T.sub.m
through the layer during deposition. For the other layers, their
deposition durations are controlled using an expected deposition
time t.sub.i based upon designed ("theoretical") thickness d.sub.i
and deposition rate r.sub.i. Accordingly, at 504, the data
processor 414 determines which layers are to be optically monitored
and which layers are to be timed using an expected deposition
time.
[0056] To determine which layers will be optically monitored, the
data processor 414 enters a simulation mode to simulate deposition
of each of the layers of the optical filter. Only the layers 25
that are determined by the simulation to have the least amount of
error are selected for optical monitoring. The simulation mode is
nearly identical to the process described below with reference to
505 to 522, except that layers are not actually deposited at 505
and 506, the processing described at 508 is skipped, and instead of
actually measuring transmission data T.sub.m vs. t at 511, it is
generated. T.sub.m vs. t is generated by adding random noise to the
theoretical data T.sub.i vs. d at .lamda..sub.m from 502 and 503.
In the exemplary embodiment, 0.2% peak-to-peak random noise is
used, and the maximum amount of error ("threshold") to select a
layer for optical monitoring is to have no more than about 0.2%
error from the theoretical thickness d.sub.i. The error
calculation, in this regard, is discussed in more detail below with
reference to 518 and 519. The layers that are simulated to exceed
the threshold amount of error are flagged to have their deposition
duration controlled by the best estimate of the deposition rate
r.sub.i for that layer or from an average of the rates of the
previous layers of like material (typically 10 to 20 of such
layers).
[0057] After determining which layers are to be optically monitored
at 504, actual deposition of the layers of the LWP filter begins at
505. In particular, the substrate is loaded into the deposition
apparatus 400 of FIG. 4, the apparatus is pumped down to a vacuum,
and deposition of the first layer (current layer i) is initiated at
506. The expected deposition time t.sub.i for layer i is calculated
as the desired thickness d.sub.i divided by the estimated
deposition rate r.sub.i for the layer or from an average of the
rates of the previous layers of like material at 507. It should be
noted, however, that calculation of the expected deposition time
t.sub.i at 507 may be calculated prior to beginning actual
deposition of the current layer i at 506.
[0058] After calculating the expected deposition time t, it is
determined whether the current layer i has been identified as a
layer to be optically monitored for controlled deposition duration.
If the current layer has not been so identified, deposition of the
current layer terminates when the expected deposition time t.sub.i
from 507 expires, as shown at 509. After the expected deposition
time t.sub.i has expired, processing advances to 521 where the next
layer is queued up for deposition, as shown at 510.
[0059] If it is determined at 508 that the current layer i is to be
optically monitored, the actual transmission T.sub.m, is measured
at 511 as a function of actual time transpired t until about 95% of
the expected deposition time t.sub.i has elapsed. Once about 95% of
t.sub.i has elapsed, a new deposition duration is calculated at
512-520. In particular, at 512, 513, and 514, using the T.sub.i vs.
d at .lamda..sub.m curve from 502 and 503, a two-dimensional (2D)
array of additional curves is generated by plotting the values of
T.sub.i against a 2D array of time vectors t.sub.jk. In particular,
at 513, transmission T.sub.ij is generated by plotting T.sub.i
against the values t.sub.j=d/r.sub.j where r.sub.j represents, for
each j, a deposition rate having a value close to the predicted
value r.sub.i. That is, the set of all r.sub.j values is a range of
values surrounding the predicted value r.sub.i. Accordingly, j is
an index that counts the number of r values that come from the
range surrounding the predicted value r.sub.i. At 514, for each
value of j, transmission T.sub.ijk is generated by plotting
T.sub.ij against the values t.sub.jk=t.sub.j+.DELTA.t.sub.k, where
.DELTA.t.sub.k represents various values used for a uniform time
shift.
[0060] At 515, it is determined whether there is more than one
extremum in the curve T.sub.i vs. d at .lamda..sub.m. If there is
more than one extremum at 515, then each of the 2D array of curves
generated at 512-514, is scaled in two ways at 516. First, the
mid-point between the two extrema for each T.sub.ijk curve is
scaled by a factor so that it equals the mid-point between the two
extrema of the measured data T.sub.m vs. t. Second, the maximum and
minimum values on each T.sub.ijk curve are scaled by scaling
uniformly about their mean so that the difference between the
maximum and minimum for each curve T.sub.ijk is the same as that on
the measured curve T.sub.m vs. t. If there is one or no extremum at
515, then the mean of each T.sub.ijk curve is scaled at 517 by a
uniform factor so that it is equal to the mean of the measured
curve T.sub.m vs. t.
[0061] After scaling at 516 or 517, processing advances to 518
where error is calculated. For each of the 2D array of generated
T.sub.ijk curves, the root-mean-square (RMS) error between each
T.sub.ijk curve and the measured curve T.sub.m vs. t is computed.
Typically this computation is performed only for data between about
10% and 95% of the expected deposition time t.sub.i. Afterwards,
the values of j and k that yield a minimum RMS error at 518 are
identified at 519. Therefore, the curve T.sub.ijk vs. t.sub.jk is
taken to be the best approximation of the actual curve T.sub.m vs.
t for layer i. At 520, the curve T.sub.ijk vs. t.sub.jk is compared
against the design curve T.sub.i vs. d at .lamda..sub.m from 502
and 503, and the time t.sub.jk at which the layer should be
terminated is computed. When the measured time t reaches t.sub.jk,
the deposition for the optically monitored layer i is
terminated.
[0062] After deposition of the current layer i has completed, the
apparatus 400 of FIG. 4 is reconfigured at 521 to start depositing
the material associated with layer i+1, and the process loops back
to 506. However, if all layers of the filter have been deposited,
the LWP filter is complete, and processing stops at 522.
[0063] FIG. 6 describes the process flow executed by the data
processor 414 when manufacturing a short-wave-pass ("SWP") filter
component. The process illustrated with FIG. 6 is based on the
inventor's observation that the inverse of the monitoring trace
(i.e., the transmission of the monitoring light as a function of
time) within each layer follows a sinusoidal pattern. As will be
shown, four parameters, .beta..sub.1, .beta..sub.2, .beta..sub.3,
and .theta..sub.m+1 are needed to fully describe the behavior of
the monitoring trace for each layer in the absence of appreciable
absorption, whereas a fifth parameter, D, must be included when
such absorption is present, as is true for the UV filters of the
present invention.
[0064] Assume initially that at the monitoring wavelength the
incident medium, deposited materials, and substrate are all
lossless (practically true in many, but not all, cases). At normal
incidence, each layer may be described by its characteristic
matrix: [ cos .times. .times. .theta. - I .times. .times. sin
.times. .times. .theta. / n - I .times. .times. n .times. .times.
sin .times. .times. .theta. cos .times. .times. .theta. ] ( 1 )
##EQU1##
[0065] where n is the refractive index of the layer, .theta. is the
accumulated phase within the layer, and i in equations 1 through 8
(and only in these equations) is the square root of --1, or i=
{square root over (-1)}. (It should be noted that although this
specification is described in the context of light striking a
filter at normal incidence, one skilled in the art will appreciate
that this invention also applies to polarized light striking a
filter at non-normal incidence.) .theta. is expressed as: .theta. =
2 .times. .pi. .lamda. m .times. nd ( 2 ) ##EQU2##
[0066] where d is the metric thickness of the layer and
.lamda..sub.m is the monitoring wavelength. Assuming an assembly of
m layers have already been deposited, the transmission of the
monitoring light within the (m+1).sup.st layer, the present layer,
may be expressed as: T = 4 .times. n a .times. n s H ( 3 )
##EQU3##
[0067] where T is the level of monitoring signal within the present
layer (transmission), and n.sub.a and n.sub.s are the refractive
indices of the incident medium and substrate, respectively. H is
defined as: H=.beta..sub.1+.beta..sup.2
cos(2.theta..sub.m+1)+.beta..sub.3 sin(2.theta..sub.m+1) (4)
[0068] .beta..sub.1, .beta..sub.2, and .beta..sub.3, are defined
as: .beta. 1 = n a 2 + n m + 1 2 2 .times. ( p 2 + q 2 n m + 1 2 )
+ 2 .times. n a .times. Re .function. ( pq * ) ( 5 ) ##EQU4##
[0069] where Re(pq*) is the Real Part of the product of the complex
number p and the complex conjugate of the complex number q. p and q
are defined in equation (8) below. .beta. 2 = n a 2 - n m + 1 2 2
.times. ( p 2 - q 2 n m + 1 2 ) ( 6 ) .beta. 3 = ( n a 2 n m + 1 -
n m + 1 ) .times. Im .function. ( p * .times. q ) ( 7 )
##EQU5##
[0070] Im(pq*) is the Imaginary Part of the product of the complex
conjugate of the number p and the complex number q. p and q are
defined as: [ p q ] = l = 1 m .times. [ cos .times. .times. .theta.
l - I .times. .times. sin .times. .times. .theta. l / n l - I
.times. .times. n .times. l .times. sin .times. .times. .theta. l
cos .times. .times. .theta. l ] .function. [ 1 n S ] ( 8 )
##EQU6##
[0071] where .theta..sub.I is accumulated phase in the I.sub.th
layer.
[0072] For monitoring wavelengths in the UV between 220 and 320 nm,
the incident medium (vacuum or air) can be assumed to be lossless
but the deposited materials for the thin-film layers and substrate
exhibit absorption with losses due to a non-zero extinction
coefficients in imaginary parts of their respective refractive
indices. For this reason, the in-situ optical monitoring algorithm
is advantageously modified with an envelope slope factor to model
the in-situ degradation of transmission monitoring signal (T) vs.
optical thickness as well as the modification of the algorithmic
fitting parameters to include calculated effects of substrate
absorption and material absorption of the depositing film layers
and the previously deposited back-side thin-film stack.
[0073] Specifically, the right hand expression in Equation (4) is
modified to be: H=[.beta.'.sub.1+.beta.'.sub.2
cos(2.theta..sub.m+1)+.beta.'.sub.3
sin(2.theta..sub.m+1)]/[1+D.theta..sub.m+1] (9)
[0074] where D is an additional in-situ fitted parameter used to
model the decrease in transmission due to extinction in the UV for
the in-situ depositing layers (taken to be front-side thin-film
stack without loss of generality), substrate, and, if applicable,
the previously deposited back-side thin film stack.
[0075] Further .beta.'.sub.1, .beta.'.sub.2, and .beta.'.sub.3 are
given by .beta. 1 ' = [ .beta. 1 .times. .delta. + ( 1 - .alpha. )
2 .times. R bR T b ] / ( 1 - .alpha. ) ( 10 ) .beta. 2 ' = .beta. 2
.times. .delta. 1 - .alpha. ( 11 ) .beta. 3 ' = .beta. 3 .times.
.delta. 1 - .alpha. ( 12 ) ##EQU7##
[0076] Here .beta..sub.1, .beta..sub.2, and .beta..sub.3 are
defined as in equations 5, 6, and 7, and the constant .delta. =
.gamma. + ( 2 .times. .alpha. - .alpha. 2 ) .times. ( 1 - A fR )
.times. R bR T b ( 13 ) ##EQU8##
[0077] Where T.sub.b is the transmittance through the previously
deposited back-side thin film stack, R.sub.bR is the substrate to
back-side reflectance, A.sub.fR is the absorption of the front side
stack, and .alpha. is the substrate single-pass absorption. The
constant .gamma. is given by: .gamma. = 1 + A fR .times. R bR + A
bR T b ( 14 ) ##EQU9## where A.sub.bR is the back-side thin film
stack absorption.
[0078] Based on the above equations, the relationship between the
monitoring trace T and the accumulated phase .theta..sub.m+1 within
the present layer is established. The inverse of the monitoring
trace is sinusoidal, as demonstrated by the expression for H.
Further, only five parameters, .beta..sub.1, .beta..sub.2,
.beta..sub.3, .theta..sub.m+1, and D are needed to fully describe
the behavior of the monitoring trace in the present layer. Because
the thickness d=r.times.t, where r is the deposition rate and t is
the deposition time, a relationship between T and r or t is also
established. If the deposition rate is constant, the accumulated
phase .theta..sub.m+1 is proportional to the deposition rate.
Therefore, during the deposition process, the deposition rate may
be retrieved with high accuracy by fitting the in-situ measurement
of the monitoring trace to the five parameters.
[0079] With this groundwork, the process of FIG. 6 will now be
described in greater detail. However, prior to initiating the
process of FIG. 6, a design for the SWP filter component is
prepared. The process of designing a SWP edge filter is very
similar to that of the LWP filter, with several exceptions. First,
the initial structure is (0.5 L H 0.5 L) N. Second, the shorter
wavelength edge of the QW stopband should be aligned with the
desired cutoff wavelength. Third, if the first layer next to the
substrate is a low index layer, it should be removed.
[0080] With the design of the SWP filter at hand, the design data,
as well as deposition rate data are received as input at 601. The
input data has the content and format described with reference to
501 in FIG. 5. At 602, the transmission curves T.sub.i vs. d at a
series of wavelengths for each I.sup.th layer are calculated as
described with reference to 502 in FIG. 5. Choosing the best
monitoring wavelength .lamda..sub.m at 603 is similar to that
described with reference to 503 in FIG. 5, except that it may be
more advantageous to select .pi..sub.m by taking an average of a
series of wavelengths than it is for an LWP filter.
[0081] At 604, the p parameters are calculated for each layer at
wavelength .lamda..sub.m using equations (1) through (8) described
above. At 605, a determination is made as to which layers should
have their deposition duration controlled by optical monitoring and
which layers should have their deposition duration timed using an
expected deposition time t.sub.i. Such determination is made by
simulating the deposition of each layer and selecting the layers
having the least amount of simulated error to be optically
monitored. Deposition of the other layers will be timed using the
expected deposition time t.sub.i.
[0082] The simulation process occurs by executing the processes of
606 to 617 as described below. However, actual deposition does not
occur at 606 and 607, the processing described at 609 is skipped,
and instead of measuring T.sub.m vs. t at 612, it is generated.
T.sub.m vs. t is generated by adding random noise to the
theoretical data T.sub.i vs. d at .lamda..sub.m from 602 and 603.
In the exemplary embodiment, 0.2% peak-to-peak random noise is
used, and the maximum amount of error ("threshold") to select a
layer for optical monitoring is to have no more than about 0.5%
error from the theoretical resulting thickness d.sub.i. The error
calculation, in this regard, is described in more detail below with
reference to 613. The layers that are simulated to exceed the
threshold amount of error are flagged to have their deposition
duration controlled by the best estimate of the deposition rate
r.sub.i for that layer or from an average of the rates of the
previous layers of like material (typically 10 to 20 such
layers).
[0083] Having determined which layers are to be optically monitored
at 605, deposition begins at 606. In particular, a substrate is
loaded into the deposition apparatus 400, the apparatus 400 is
pumped down to vacuum, and deposition of the first layer (current
layer i) is initiated at 607. At 608, the expected deposition time
t.sub.i for layer i is calculated as the desired thickness d.sub.i
divided by the estimated deposition rate for the layer r.sub.i or
from an average of the rates of the previous layers of like
material. It should be noted, however, that calculation of the
expected deposition time t.sub.i at 608 may be calculated prior to
beginning actual deposition of the current layer i at 607.
[0084] At 609 it is determined whether the current layer i was
identified as an optically monitored layer at 605. If not,
deposition occurs until the expected deposition time t.sub.i
expires, and the deposition apparatus is configured for deposition
of the next layer, as shown at 610, 611, and 616. If it is
determined that the current layer i is an optically monitored layer
at 609, the transmission T.sub.m of the current layer is measured
at 612 as a function of actual time t transpired, thereby producing
a measured curve T.sub.m vs. t, until about 95% of time t.sub.i has
elapsed. Once about 95% of the time t.sub.i has elapsed, a new
layer time is calculated at 613 to 615.
[0085] To elaborate, at 613, T.sub.i vs. t (where t=d/r and T. vs.
d at .lamda..sub.m was calculated and selected at 602 and 603,
respectively) is fit to the measured curve T.sub.m vs. (from 612.
The T. vs. t curve is fit to the measured curve T.sub.m vs. t by
using a function that minimizes the error between the two curves by
varying .beta..sub.1, .beta..sub.2, .beta..sub.3, and the
deposition rate r. An example of such a function is the
Levenberg-Marquardt method implemented under the name "mrqmin( )"
in the book Numerical Recipes in C: The Art of Scientific
Computing, by Press, W. H.; Teukolsky, S. A.; Vetterling, W. T.;
and Flannery, B. P., 2nd ed., Cambridge University Press,
Cambridge, 1995. These calculations result in a calculated
deposition rate for the current layer i, or r.sub.ci.
[0086] Because of noise in the overall system and the sensitivity
of the high-performance SWP filters to small layer-thickness
errors, the calculated rates r.sub.ci tend to be insufficiently
accurate if used directly. Therefore, a "best rate" for each layer,
r.sub.bi, is calculated at 614 as the average of the calculated
rate r.sub.ci and calculated rates r.sub.cj, r.sub.c,j+2, . . . ,
r.sub.c,i-4, r.sub.c,i-2 for a certain number (i-j)/2 of previous
layers of the same material. In other words, the best rate is a
rolling average of the current and previous rates from layers of
like material within a certain window. Typically, this window
includes about 20 layers.
[0087] At 615, the best rate r.sub.bi is used to calculate the
layer termination time t.sub.t=d/r.sub.bi, and the layer is
terminated when the clock reaches this time. Once deposition of the
current layer is complete, the deposition apparatus 400 of FIG. 4
is reconfigured at 616 to start depositing the material associated
with the next layer i+1, and the process loops back to 607.
However, if all layers have been deposited, manufacturing of the
SWP filter is complete, and the process ends at 617.
[0088] The improved filters have the general structure
schematically illustrated in FIG. 3 but are made by the processes
described herein in connection with FIGS. 5 and 6. In essence, the
filters comprise a transparent substrate advantageously having a
pair of optically flat planar major surfaces and a plurality of
alternating layers of relatively high index and relatively low
index materials. The materials are hard oxide coating materials
such as SiO.sub.2, Ta.sub.2O.sub.5, Nb.sub.2O.sub.5, HfO.sub.2,
TiO.sub.2, and Al.sub.2O.sub.5.
[0089] The filters differ from filters described in the '430 patent
in that the effect of absorption is accounted for in the design and
fabrication. They differ from pre-430 patent conventional filters
primarily in the number of layers (more than 30 and typically more
than 100) and in that the thicknesses of layers deposited are
controlled by the processes of FIGS. 5 and 6 to produce a highly
sloped steep edge (edge steepness may be as low as about 0.8% or
lower). The edge steepness, in this regard, is measured by dividing
(a) the edge width from the 50% transmission wavelength to the
optical density 6 ("OD6") wavelength by (b) the 50% transmission
wavelength. Accordingly, lower steepness values indicate greater
slope. Optical density ("OD") is a measure of the blockage
encountered by impinging light and is defined as follows:
OD=-log.sub.10(T) (15)
[0090] where T is the transmittance having a value between zero and
one. OD6 therefore corresponds to a transmittance of 10.sub.-6.
Advantageously the edge steepness, as defined above, may be less
than about 0.58% at 266 nm and 0.78% at 248 nm. However, the edge
steepness may be increased if necessary.
[0091] In addition, the filters so made exhibit an average
transmission well above 40% within the operating range of the
passband between 230 and 320 nm. Average transmission of the
filters typically exceeds 90% in the operating range greater than
320 nm. The filters thus provide performance exceeding that of the
highest performing conventional soft-coating filters with a more
robust and durable hard-coated structure.
[0092] The invention can now be more clearly understood by
consideration of the following example: a UV band transmission
filter with extended out-of-band blocking was made employing the
design and fabrication process described above. The filter was
designed to transmit a band of wavelengths within the range of 230
to 320 nanometers and to provide extended blocking. The substrate
was a fused silica plate of thickness 2 mm having a pair of
optically smooth planar major surfaces. The LWP and SWP filter
components were formed on the respective major surfaces. The filter
components comprised stacks of silica and hafnia layers of
substantially quarter wave thickness deposited as described herein.
To reduce UV absorption the flow of O.sub.2 was controlled during
deposition of both silica and hafnia and the assist ion beam used
during the deposition of silica was turned off during the
deposition of hafnia. The deposition algorithms were modified as
described herein to account for the absorption of UV light by the
hafnia layers. The thicknesses in the exemplary filters are set
forth in Appendix A. The layers are counted from the substrate
outward toward air.
[0093] FIG. 7 shows the measured and theoretical transmission
spectra of the resulting filter. Curve 1 is the measured spectrum,
and curve 2 is the theoretical spectrum.
[0094] FIG. 8 illustrates the optical density (OD) spectrum of the
resulting filter. Curve 1 is the measured spectrum, and curve 2 is
the theoretical spectrum. The OD is a measure of the blockage
encountered by impinging light. As previously noted, the
out-of-band blocking for this UV band transmission filter extends
through the visible spectrum. For all wavelengths in the range 230
to 600 nanometers, the filter provides an average optical density
of 3 or more. Indeed, the exemplary filter provides an average
optical density of 3 or more for the range 230 to 840 nanometers.
Here average optical density (called OD.sub.avg) is defined as OD
avg = 1 .lamda. 2 - .lamda. 1 .times. .intg. .lamda. 1 .lamda. 2
.times. Min .function. [ - log 10 .function. ( T .function. (
.lamda. ) ) , 6 ] .times. d .lamda. , ##EQU10##
[0095] Where Min[a,b] is mathematical notation to indicate that the
smaller of the values a and b is to be chosen. The filter also
provides an optical density of the average transmission over the
wavelength range 320 to 700 nm of greater than 4. Here the optical
density of the average transmission (called OD(T.sub.avg)) is
defined as OD .function. ( T avg ) = - log 10 .function. [ 1
.lamda. 2 - .lamda. 1 .times. .intg. .lamda. 1 .lamda. 2 .times. T
.function. ( .lamda. ) .times. d .lamda. ] . ##EQU11##
[0096] The resulting exemplary filter is believed to have
characteristics superior to any currently available commercial UV
fluorescence filter. It provides transmission up to three or more
times greater, edge slopes up to four times sharper, and deep
extended out-of-band blocking into and even through the visible
range.
[0097] Because of the superior characteristics of the filter,
superior optical analysis systems can be built. Such a system, as
described above, would include a source of excitation light for
exciting a sample, a filter in accordance with the invention
between the source and the sample and a collection light path from
the sample.
[0098] While we have exemplified our method and resulting filter as
a transmission filter having coatings to produce a low pass filter
and a high pass filter on opposing surfaces of a substrate, it
should be clear that the same method can be used to fabricate a
transmission filter where both coatings (low pass and high pass)
are stacked on the same surface of the substrate. The method can
also be used to fabricate a transmission filter on one surface of
the substrate by hard coatings that form a multi-cavity Fabry-Perot
transmission filter. If the coatings are stacked on one surface,
the opposing surface can be coated for anti-reflection or to extend
blocking of out-of-band wavelengths.
[0099] It now can be seen that in one aspect the invention is an
optical bandpass filter for transmitting a passband of ultraviolet
light. The filter comprises a substrate having one or more surfaces
for supporting thin film coatings, a plurality of alternating
layers of at least two hard-coating materials of higher refractive
index and lower refractive index overlying at least one of the
surfaces to form a transmission filter. The passband of the filter
is a band of ultraviolet light within the range of 230 nanometers
to 320 nanometers, i.e. the transmission band of the filter falls
within, encompasses or partially overlaps the 230 to 320 nanometer
range. The filter has an average transmission of light over the
passband exceeding 40% and an average optical density of at least
3.0 at all wavelengths over the range 230 to 600 nanometers and
preferrably at least 3.0 over the range 230 to 840 nanometers.
[0100] The bandpass filter can comprise a long wave pass filter
component and a short wave pass filter component that overlie
respective opposing surfaces of the substrate. Alternatively, the
long wave pass filter component and the short wave pass filter
component can overlie the same surface of the substrate. Or the
bandpass filter can comprise a plurality of alternating layers on
at least one surface of the substrate forming a multi-cavity
Fabry-Perot transmission filter.
[0101] In another aspect, the invention comprises an improved
optical analysis system comprising a source of excitation light for
exciting a sample, an excitation filter between the source and the
sample, and a collection light path from the sample. In the
improved system, the light source comprises an ultraviolet light
source and the excitation filter comprises a filter as described
herein.
[0102] Yet another aspect of the invention is an improved method of
making an optical bandpass filter for transmitting a band of light
with extended out of band blocking. The method comprises the steps
of providing a substrate having one or more surfaces and forming on
one or more surfaces a transmission filter comprising alternating
layers of at least two hard coating materials of higher refractive
index and lower refractive index. Each of the layers are deposited
by a data processor controlled process comprising calculating with
the data processor a theoretical transmission T.sub.i of light
through the layer, calculating with the data processor an expected
deposition time t.sub.i of the layer, measuring during the
deposition of the layer for a period of time less then t.sub.i a
measured transmission T.sub.m of light through the layer and
determining with the data processor when deposition of the layer is
to terminate based upon the theoretical transmission T.sub.i and
the measured transmission T.sub.m. In the improved process, the
calculations of t.sub.i ant T accounts for absorption by the
relation of Equations (9) thru (14) herein.
[0103] It is to be understood that the exemplary embodiment is
merely illustrative of the present invention and that many
variations can be devised by those skilled in the art without
departing from the spirit and scope of the invention.
TABLE-US-00001 APPENDIX A Side 1 Side 2 Thickness (.mu.m):
12.325733 Thickness (.mu.m): 1.758378 Total Layers: 180 Total
Layers: 57 Layer Material Thickness (nm) Layer Material Thickness
(nm) 1 HfO2 72.1007 1 HfO2 27.3195 2 SiO2 118.3490 2 SiO2 20.9656 3
HfO2 85.1500 3 HfO2 22.7797 4 SiO2 114.9216 4 SiO2 37.6872 5 HfO2
82.6366 5 HfO2 26.9187 6 SiO2 111.4661 6 SiO2 38.6993 7 HfO2
107.4115 7 HfO2 25.5595 8 SiO2 92.7005 8 SiO2 34.1848 9 HfO2
102.6364 9 HfO2 24.3603 10 SiO2 107.2082 10 SiO2 35.6352 11 HfO2
87.1395 11 HfO2 26.2768 12 SiO2 109.5288 12 SiO2 38.7735 13 HfO2
91.4296 13 HfO2 26.7182 14 SiO2 108.1881 14 SiO2 38.1082 15 HfO2
81.8771 15 HfO2 25.7298 16 SiO2 110.1988 16 SiO2 35.8083 17 HfO2
73.9249 17 HfO2 25.0468 18 SiO2 117.1318 18 SiO2 36.5451 19 HfO2
74.6909 19 HfO2 26.1482 20 SiO2 118.2505 20 SiO2 38.6671 21 HfO2
75.5438 21 HfO2 26.5937 22 SiO2 106.8061 22 SiO2 38.4960 23 HfO2
75.5688 23 HfO2 25.7947 24 SiO2 106.3660 24 SiO2 36.6766 25 HfO2
84.5039 25 HfO2 25.0609 26 SiO2 113.9206 26 SiO2 36.6864 27 HfO2
76.9341 27 HfO2 25.8315 28 SiO2 119.1098 28 SiO2 38.4870 29 HfO2
70.5075 29 HfO2 26.5693 30 SiO2 110.1970 30 SiO2 38.7309 31 HfO2
76.0482 31 HfO2 26.0688 32 SiO2 108.5060 32 SiO2 36.9925 33 HfO2
80.8123 33 HfO2 25.1015 34 SiO2 102.4766 34 SiO2 36.4162 35 HfO2
73.8582 35 HfO2 25.5644 36 SiO2 107.6290 36 SiO2 38.1222 37 HfO2
77.0410 37 HfO2 26.4967 38 SiO2 111.8720 38 SiO2 39.0124 39 HfO2
67.2644 39 HfO2 26.3862 40 SiO2 94.9101 40 SiO2 37.2234 41 HfO2
64.9878 41 HfO2 25.1252 42 SiO2 76.8883 42 SiO2 35.3620 43 HfO2
63.6517 43 HfO2 25.3871 44 SiO2 110.4563 44 SiO2 37.5519 45 HfO2
70.0142 45 HfO2 26.7525 46 SiO2 98.3208 46 SiO2 38.9845 47 HfO2
75.2259 47 HfO2 26.8832 48 SiO2 100.9608 48 SiO2 36.7390 49 HfO2
75.2577 49 HfO2 24.5900 50 SiO2 93.0265 50 SiO2 32.9317 51 HfO2
72.0313 51 HfO2 24.9154 52 SiO2 91.0647 52 SiO2 37.9697 53 HfO2
56.1579 53 HfO2 27.2033 54 SiO2 98.8476 54 SiO2 40.1149 55 HfO2
74.9020 55 HfO2 26.3818 56 SiO2 85.5257 56 SiO2 27.7252 57 HfO2
59.0061 57 HfO2 15.5180 58 SiO2 102.8053 59 HfO2 63.8348 60 SiO2
90.2354 61 HfO2 57.3333 62 SiO2 86.6766 63 HfO2 56.2852 64 SiO2
89.4719 65 HfO2 58.6218 66 SiO2 88.1946 67 HfO2 68.0857 68 SiO2
102.4020 69 HfO2 61.6486 70 SiO2 86.9727 71 HfO2 71.2438 72 SiO2
87.7043 73 HfO2 55.1169 74 SiO2 90.3453 75 HfO2 57.3322 76 SiO2
85.4162 77 HfO2 55.4564 78 SiO2 71.5981 79 HfO2 53.0274 80 SiO2
77.9571 81 HfO2 59.7391 82 SiO2 86.5060 83 HfO2 60.0115 84 SiO2
76.9315 85 HfO2 52.7560 86 SiO2 79.5779 87 HfO2 62.3061 88 SiO2
82.4643 89 HfO2 55.0188 90 SiO2 79.5853 91 HfO2 50.8281 92 SiO2
71.1860 93 HfO2 52.4135 94 SiO2 79.9608 95 HfO2 51.1334 96 SiO2
67.5792 97 HfO2 60.0648 98 SiO2 87.6077 99 HfO2 50.3849 100 SiO2
70.2799 101 HfO2 51.7803 102 SiO2 68.2664 103 HfO2 46.5611 104 SiO2
68.7605 105 HfO2 50.3361 106 SiO2 73.0590 107 HfO2 45.5139 108 SiO2
66.9389 109 HfO2 46.2534 110 SiO2 68.3094 111 HfO2 52.4229 112 SiO2
52.8991 113 HfO2 44.6834 114 SiO2 64.3372 115 HfO2 41.1402 116 SiO2
67.6132 117 HfO2 54.5554 118 SiO2 65.1206 119 HfO2 43.6465 120 SiO2
63.8078 121 HfO2 44.4390 122 SiO2 72.6333 123 HfO2 54.8816 124 SiO2
55.8602 125 HfO2 40.4550 126 SiO2 61.4907 127 HfO2 40.8874 128 SiO2
57.4055 129 HfO2 45.5921 130 SiO2 79.7559 131 HfO2 43.2964 132 SiO2
61.4557 133 HfO2 43.0496 134 SiO2 51.1259 135 HfO2 45.2922 136 SiO2
25.3388 137 HfO2 50.4883 138 SiO2 57.5332 139 HfO2 44.8209 140 SiO2
81.9174 141 HfO2 46.3080 142 SiO2 61.7248 143 HfO2 39.0360 144 SiO2
52.2586 145 HfO2 36.5175 146 SiO2 58.2430 147 HfO2 39.0385 148 SiO2
49.9179 149 HfO2 36.9217 150 SiO2 56.2932 151 HfO2 35.2279 152 SiO2
50.5663 153 HfO2 39.8732 154 SiO2 58.7650 155 HfO2 35.0772 156 SiO2
49.2266 157 HfO2 37.7815 158 SiO2 56.7485 159 HfO2 35.9983 160 SiO2
53.0305 161 HfO2 37.1014 162 SiO2 56.5459 163 HfO2 37.8429 164 SiO2
54.5702 165 HfO2 34.9456 166 SiO2 49.8230 167 HfO2 38.1749 168 SiO2
59.7611 169 HfO2 44.5530 170 SiO2 29.2983 171 HfO2 42.7338 172 SiO2
52.9270 173 HfO2 36.7455 174 SiO2 55.2726 175 HfO2 40.7526 176 SiO2
57.6055 177 HfO2 35.6880 178 SiO2 51.7944 179 HfO2 44.2760 180 SiO2
115.8012
* * * * *