U.S. patent application number 11/639282 was filed with the patent office on 2007-12-27 for apparatus and method of fabricating thin film pattern.
This patent application is currently assigned to LG. PHILIPS LCD., LTD.. Invention is credited to Jin Wuk Kim.
Application Number | 20070295688 11/639282 |
Document ID | / |
Family ID | 38872606 |
Filed Date | 2007-12-27 |
United States Patent
Application |
20070295688 |
Kind Code |
A1 |
Kim; Jin Wuk |
December 27, 2007 |
Apparatus and method of fabricating thin film pattern
Abstract
A fabricating method and apparatus of a thin film pattern
improves the reliability of forming the thin film pattern by a
resist printing method. The apparatus includes a print roller
device of a roll shape around which a blanket is wound; a spray
device located around the print roller device for spraying an etch
resist solution to the blanket; and a print plate of an engraved
shape where a groove of a desired thin film shape and a projected
part except the groove are formed, and the etch resist solution has
a surfactant inclusive of an ethylene oxide fluorinated polymer
material.
Inventors: |
Kim; Jin Wuk; (Uiwang-si,
KR) |
Correspondence
Address: |
BIRCH STEWART KOLASCH & BIRCH
PO BOX 747
FALLS CHURCH
VA
22040-0747
US
|
Assignee: |
LG. PHILIPS LCD., LTD.
|
Family ID: |
38872606 |
Appl. No.: |
11/639282 |
Filed: |
December 15, 2006 |
Current U.S.
Class: |
216/54 ;
118/200 |
Current CPC
Class: |
H01L 21/02288 20130101;
H01L 27/1292 20130101; H01L 21/6715 20130101; H01L 21/0212
20130101; G02F 1/1333 20130101; G02F 2202/022 20130101; H01L
21/3127 20130101; H01L 51/56 20130101; H01J 2209/02 20130101; H01L
27/124 20130101; G02F 2202/28 20130101 |
Class at
Publication: |
216/54 ;
118/200 |
International
Class: |
C03C 25/68 20060101
C03C025/68; B05C 1/00 20060101 B05C001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 23, 2006 |
KR |
10-2006-0056739 |
Claims
1. A fabricating apparatus of a thin film pattern, comprising: a
print roller device having a roll shape around which a blanket is
wound; a spray device located around the print roller device for
spraying an etch resist solution onto the blanket; and a print
plate of an engraved shape where a groove of a desired thin film
shape and a projected part except the groove are formed, and
wherein the etch resist solution includes at least one surfactant
inclusive of an ethylene oxide fluorinated polymer.
2. The fabricating apparatus according to claim 1, wherein the
ethylene oxide fluorinated polymer has the general formula
CF.sub.3(CF.sub.2).sub.m(CH.sub.2CH.sub.2O).sub.n where m is about
1-10 and n is about 8-50.
3. The fabricating apparatus according to claim 1, wherein the
ethylene oxide fluorinated polymer is
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20).sub.10 or
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.20).sub.14.
4. The fabricating apparatus according to claim 1, wherein the etch
resist solution has a base polymer of 4.about.20%, a carrier
solvent of 40.about.60%, a printing solvent of 20.about.40% and the
surfactant of 0.05.about.1%.
5. The fabricating apparatus according to claim 1, wherein the
surfactant has molecular structures of hydrocarbons and fluorine
radicals, and the molecules of the hydrocarbons and fluorine
radicals are randomly distributed within the etch resist
solution.
6. The fabricating apparatus according to claim 5, wherein the
hydrocarbon group molecule is at least any one of ethylene oxide
(CH.sub.2CH.sub.2O), propylene oxide (CH.sub.2CH.sub.2CH.sub.2O) or
amine (CH.sub.2N).
7. The fabricating apparatus according to claim 5, wherein an
adhesive force between the etch resist solution and the print plate
is stronger than an adhesive force between the etch resist solution
and the blanket.
8. The fabricating apparatus according to claim 4, wherein the base
polymer is any one of novolac, poly methyl methacrylate or poly
methyl acrylate.
9. The fabricating apparatus according to claim 4, wherein the
carrier solvent is at least one alcohol.
10. The fabricating apparatus according to claim 4, wherein the
printing solvent is at least any one of N-Methyl pyrrolidone, ethyl
benzoate or tri-isopropyl benzene.
11. A fabricating method of a thin film pattern, comprising:
providing a print roller device having a roll shape around which a
blanket is wound; coating the blanket with an etch resist solution
including a surfactant inclusive of an ethylene oxide fluorinated
polymer; providing a print plate of an engraved shape where a
groove and a projected part except the groove is formed; and
transferring the etch resist solution only on the projected part of
the print plate and leaving the etch resist solution of an area
corresponding to the groove in the print roller device.
12. The fabricating method according to claim 11, wherein the
ethylene oxide fluorinated polymer has the general formula
CF.sub.3(CF.sub.2).sub.m(CH.sub.2CH.sub.2O).sub.n where m is about
1-10 and n is about 8-50.
13. The fabricating method according to claim 11, wherein the
ethylene oxide fluorinated polymer is any one of
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20).sub.10 or
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.20).sub.14.
14. The fabricating method according to claim 11, wherein the etch
resist solution has a base polymer of 4.about.20%, a carrier
solvent of 40.about.60%, a printing solvent of 20.about.40% and the
surfactant of 0.05.about.1%.
15. The fabricating method according to claim 11, wherein the
surfactant has molecular structures of hydrocarbons and fluorine
radicals, and the molecules of the hydrocarbons and fluorine
radicals are randomly distributed within the etch resist
solution.
16. The fabricating method according to claim 15, wherein the hydro
carbon molecules are at least one of ethylene oxide, propylene
oxide or amine.
17. The fabricating method according to claim 11, wherein an
adhesive force between the etch resist solution and the print plate
is stronger than an adhesive force between the etch resist solution
and the blanket.
18. The fabricating method according to claim 14, wherein the base
polymer is any one of novolac, poly methyl methacrylate or poly
methyl acrylate.
19. The fabricating method according to claim 14, wherein the
carrier solvent is at least one alcohol.
20. The fabricating method according to claim 14, wherein the
printing solvent is at least any one of N-Methyl pyrrolidone, ethyl
benzoate or tri-isopropyl benzene.
21. The fabricating method according to claim 11, wherein
transferring the etch resist solution onto the projected part of
the print plate further includes: contacting the etch resist
solution with the surface of the projected part while rotating the
print roller device which is coated with the etch resist
solution.
22. The fabricating method according to claim 11, further
comprising: providing a substrate where a thin film layer is
formed; and transferring the etch resist solution left in the print
roller device onto the thin film layer to form the etch resist of
the same shape as a groove of the print plate onto the thin film
layer.
23. An etch resist solution, comprising: a base polymer; a printing
solvent; a carrier solvent; and a surfactant inclusive of an
ethylene oxide fluorinated polymer.
24. The etch resist solution according to claim 23, wherein the
ethylene oxide fluorinated polymer has the general formula
CF.sub.3(CF.sub.2).sub.m(CH.sub.2CH.sub.2O).sub.n where m is about
1-10 and n is about 8-50.
25. The etch resist solution according to claim 23, wherein the
ethylene oxide fluorinated polymer is
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20).sub.10 or
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.20).sub.14.
26. The etch resist solution according to claim 23, wherein the
base polymer of is present at 4.about.20%, the carrier solvent is
present at 40.about.60%, the printing solvent is present at
20.about.40% and the surfactant is present at 0.05.about.1%.
Description
[0001] This application claims the priority benefit Under 35 U.S.C.
.sctn.119 of the Korean Patent Application No. P06-0056739 filed on
Jun. 23, 2006, which is hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention pertains to a fabricating method of a thin
film pattern of a display panel, and more particularly to a reverse
resist printing device and a fabricating method of a thin film
pattern using the same.
[0004] 2. Description of the Related Art
[0005] Recently, various flat panel display devices, which can
reduce the weight and size that are a disadvantage of a cathode ray
tube, have been on the rise. The flat panel display devices
includes liquid crystal displays, field emission displays, plasma
display panels, organic electro luminescence (hereinafter, referred
to as `EL`) displays, etc.
[0006] Among these, the liquid crystal display devices control the
light transmittance of liquid crystal by using an electric field,
thereby displaying a picture. To this end, a liquid crystal display
device includes a liquid crystal display panel where liquid crystal
cells are arranged in a matrix shape, and a drive circuit for
driving the liquid crystal display panel.
[0007] The liquid crystal display panel includes a thin film
transistor array substrate and a color filter array substrate that
face each other; a spacer for keeping a fixed cell gap between the
two substrates; and a liquid crystal filled in the cell gap.
[0008] A thin film transistor array substrate includes gate lines
and data lines, a thin film transistor formed as a switch device at
each of the crossing parts of the gate lines and the data lines; a
pixel electrode formed by the unit of a liquid crystal cell to be
connected to the thin film transistor; and an alignment film spread
thereon. The gate lines and the data lines receive signals from
drive circuits through pads, respectively. The thin film transistor
supplies a pixel signal supplied to the data line to a pixel
electrode in response to a scan signal supplied to the gate
line.
[0009] A color filter array substrate includes color filters formed
by the unit of a liquid crystal cell; a black matrix for dividing
the color filters and reflecting an external light; a common
electrode for commonly supplying a reference voltage to the liquid
crystal cells; and an alignment film spread thereon.
[0010] Separately making the thin film transistor array substrate
and the color filter array substrate and bonding them together
complete the liquid crystal display panel. Then, a liquid crystal
is injected and the panel is sealed.
[0011] A photolithography process and an etching process form the
thin film patterns within the related art liquid crystal display
panel.
[0012] However, the photolithography process includes a number of
processes such as an exposure process, a development process, a
cleaning process, an inspection process, etc, thereby causing an
increase of the manufacturing cost of the liquid crystal display
panel. Accordingly, a method of patterning a thin film by a reverse
resist printing method is used instead of the photo lithography
process.
[0013] FIG. 1 shows a diagram representing a reverse resist
printing device.
[0014] The reverse resist printing device shown in FIG. 1 includes
a print roller device 10 having a roll shape where a blanket 15
composed of polydimethylsiloxane (PDMS) is wound. An etch resist
solution spray device 12 sprays an etch resist resin solution, and
an engraved print plate 20 includes a groove 20A, which has the
same shape as a thin film pattern that is to be formed, and a
projected part 20B which borders the groove 20A.
[0015] FIGS. 2A to 2E are diagrams that explain the forming of a
thin film pattern by the reverse resist printing device of FIG. 1.
Especially, FIGS. 2A to 2D represent a forming process of a gate
pattern of the liquid crystal display panel by using the reverse
resist printing method.
[0016] First, as shown in FIG. 2A, an etch resist solution 14A from
the etch resist solution spray device 12 is sprayed onto the
blanket 15 that is wound around the print roller device 10. The
print roller device 10 rotates to coat the blanket 15 with the etch
resist solution 14A.
[0017] Then, as shown in FIG. 2B, the etch resist solution 14A
transfers only to the projected part 20B in the print roller device
10 as the print roller device 10 coated with the etch resist 14A
simultaneously rotates and contacts the print plate 20.
Accordingly, as shown in FIG. 2C, an etch resist solution 14B
having a desired thin film pattern shape remains on the print
roller device 10.
[0018] Then, as shown in FIG. 2D, the etch resist solution 14B,
which was transferred to the print roller device 10, transfers
again onto a substrate 30 where a designated metal layer, e.g., a
gate metal layer, is formed. Then, the resist is cured.
Accordingly, as shown in FIG. 2E, the etch resist pattern 14C for
patterning the metal layer 32A can be formed. Afterwards, the metal
layer 32A not overlapping the etch resist pattern 14C is patterned,
thereby forming the desired thin film pattern on the substrate 30.
Here, if forming the gate pattern such as the gate line, the gate
electrode, etc. of the liquid crystal display panel, the gate
pattern can be formed using chromium (Cr), aluminum neodymium
(AlNd), etc. as the metal layer 32A.
[0019] The etch resist solution 14A used in the reverse resist
printing device is formed of a basic polymer such as novolac, etc.
a carrier solvent, a printing solvent, a surfactant, etc.
[0020] Here, the carrier solvent is a solvent that reduces the
viscosity of the etch resist solution 14A sprayed from the etch
resist solution spray device 12 so that the etch resist solution
14A can be evenly coated over the blanket 15.
[0021] The printing solvent is used for the etch resist solution
14A coated on the blanket 15 to impart a tack characteristic or
adhesiveness.
[0022] The surfactant is a material which is applied to an
interface to greatly decrease the surface tension of the interface
and which acts to decrease the surface tension of the etch resist
solution 14A. If a silicon-based surfactant is used, the coating
can be good but the silicon-based material contaminates the
blanket. Thus, a fluorine-based surfactant is used. However, the
fluorine-based surfactant reduces the surface energy of the etch
resist solution 14A, thus the adhesive force between the etch
resist solution 14A and the blanket 15 becomes similar to the
adhesive force between the etch resist solution 14A and the print
plate 20. As a result, the characteristic that the etch resist
solution 14A is transferred from the blanket 15 to the print plate
20 decreases, and thus the reliability of forming the thin film
pattern by the resist printing method deteriorates.
SUMMARY OF THE INVENTION
[0023] Accordingly, it is an object of the invention to provide a
fabricating method and apparatus of a thin film pattern that
improves the reliability of forming a thin film pattern by a resist
printing method by way of improving a transfer characteristic of an
etch resist solution.
[0024] In order to achieve these and other objects of the
invention, a fabricating apparatus of a thin film pattern according
to one aspect of the invention includes a print roller device of a
roll shape around which a blanket is wound; a spray device located
around the print roller device for spraying an etch resist solution
to the blanket; and a print plate of an engraved shape where a
groove of a desired thin film shape and a projected part except the
groove are formed, and the etch resist solution has a surfactant
inclusive of an ethylene oxide fluorinated polymer material.
[0025] In the invention, the ethylene oxide fluorinate polymer
material may be CF.sub.3(CF.sub.2).sub.m(CH.sub.2CH.sub.2O).sub.n
where m is about 1-10 and n is about 8-50, for example, any one of
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20).sub.10 and
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.20).sub.14.
[0026] In the invention, the etch resist solution has a base
polymer of 4.about.20%, a carrier solvent of 40.about.60%, a
printing solvent of 20.about.40% and the surfactant of
0.05.about.1%.
[0027] In the invention, the surfactant has molecular structures of
hydrocarbons and fluorine radicals, and the molecules of the hydro
carbons and fluorine radicals are randomly distributed within the
etch resist solution.
[0028] In the invention, the hydrocarbon group molecule is at least
anyone of ethylene oxide (CH.sub.2CH.sub.2O), propylene oxide
(CH.sub.2CH.sub.2CH.sub.2O) or amine (CH.sub.2N).
[0029] In the invention, an adhesive force between the etch resist
solution and the print plate is stronger than an adhesive force
between the etch resist solution and the blanket.
[0030] In the invention, the base polymer is any one of novolac,
and PMMA (poly methyl methacrylate) or PMA (poly methyl
acrylate).
[0031] In the fabricating apparatus, the carrier solvent is an
alcohol group.
[0032] In the invention, the printing solvent is at least any one
of NMP (N-Methyl pyrrolidone), ethyl benzoate or tri-isopropyl
benzene.
[0033] The invention, in part, pertains to a fabricating method of
a thin film pattern that includes the steps of providing a print
roller device of a roll shape around which a blanket is wound;
coating the blanket with an etch resist solution inclusive of a
surfactant formed of ethylene oxide fluorinated polymer; providing
a print plate of an engraved shape where a groove and a projected
part except the groove is formed; and transferring the etch resist
solution only on the projected part of the print plate and leaving
the etch resist solution of an area corresponding to the groove in
the print roller device.
[0034] The invention, in part, pertains to a resist solution that
includes a base polymer, a printing solvent, a carrier solvent, and
a surfactant inclusive of an ethylene oxide fluorinated
polymer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0035] These and other objects of the invention will be apparent
from the following detailed description of the embodiments of the
invention with reference to the accompanying drawings, in
which:
[0036] FIG. 1 shows a diagram representing a reverse resist
printing device of the related art;
[0037] FIGS. 2A to 2E show diagrams representing a process of
forming a thin film pattern by a reverse resist printing method,
step by step;
[0038] FIG. 3 shows a diagram of a typical structure of internal
components of the etch resist solution including a fluorine group
surfactant of the related art;
[0039] FIG. 4 shows a diagram specifically representing a process
of coating an etch resist on a print plate; and
[0040] FIG. 5 shows a diagram of a typical structure of internal
components of an etch resist solution including a surfactant,
according to the invention.
DETAILED DESCRIPTION
[0041] Reference will now be made in detail to the preferred
embodiments of the invention, examples of which are illustrated in
the accompanying drawings.
[0042] With reference to FIGS. 3 to 5, embodiments of the invention
will be explained as follows.
[0043] A fabricating method and apparatus of a thin film pattern
according to one preferred embodiment of the invention uses an etch
resist solution that includes a surfactant inclusive of an ethylene
oxide fluorinated polymer. The etch resist solution including this
surfactant has a stronger adhesive force with the print plate than
with the blanket, thus it becomes possible to easily transfer the
etch resist solution from the blanket to the print plate. As a
result, the reliability of forming the thin film pattern by a
resist printing method can be improved.
[0044] Referring to FIGS. 2A to 2D, the etch resist solution of the
invention will be explained in detail in conjunction with a
fabricating method of a thin film pattern by a resist printing
method.
[0045] First, as shown in FIG. 2A, an etch resist solution 14A from
an etch resist solution spray device 12 is sprayed onto a blanket
15 which is wound around a print roller device 10. The print roller
device 10 rotates to evenly coat the etch resist resin solution 14A
over the blanket 15. Accordingly, the etch resist solution 14A
coats over the blanket 15 of the print roller device 10.
[0046] A typical composition of the etch resist solution is as in
TABLE 1.
TABLE-US-00001 TABLE 1 Base polymer Carrier solvent Printing
solvent Surfactant 4~20% 40~60% 20~40% 0.05~1%
[0047] Herein, Novolac, epoxy-Novolac, PMMA (poly methyl
methacrylate), PMMA copolymers, PMA (poly methyl acrylate), PMA
copolymers etc. are used as the base polymer.
[0048] The carrier solvent means a solvent used for evenly coating
the etch resist solution 14A over the blanket by reducing the
viscosity of the etch resist solution 14A sprayed from the etch
resist solution spray device 12. The carrier solvent may be an
alcohol such as methanol, ethanol, propanol, isopropanol, butanol
etc. Non-alcoholic solvents such as benzene may be used. The
carrier solvent may also be a solvent mixture, e.g., a mixture of
alcohols. The boiling point of the carrier solvent is preferably
less than 100.quadrature..
[0049] The printing solvent is used to give the etch resist
solution 14A coated over the blanket a sticky characteristic or
adhesiveness. The printing solvent is a solvent that dissolves the
base polymer well, such as NMP (N-Methylpyrrolidone), ethyl
benzoate, tri-isopropyl benzene, etc. The boiling point of the
printing solvent is preferably not less than 200.quadrature..
[0050] The surfactant is a material firmly adheres to the interface
to greatly decrease the surface tension of the interface, and acts
to lower the surface tension of the etch resist solution 14A.
[0051] The surfactant may include an ethylene oxide fluorinated
polymer material having the general formula
CF.sub.3(CF.sub.2).sub.m(CH2CH2O).sub.n where m is about 1-10 and n
is about 8-50. Typical examples of this material include
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20).sub.10,
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.2O).sub.14, etc. Instead of
the ethylene oxide moiety, block copolymers of ethylene oxide and
propylene oxide can also be used. The surfactant inclusive of the
ethylene oxide fluorinated polymer increases the surface energy of
the etch resist solution 14A. Accordingly, the etch resist solution
14A has a stronger adhesive force with the print plate 20 than with
the blanket 15, thus the etch resist solution 14A can be easily
transferred from the blanket 15 to the print plate 20.
[0052] With reference to FIGS. 3 to 5, the invention will be
explained more specifically as follows.
[0053] FIG. 3 shows a diagram of a typical inner structure of an
etch resist solution 14A including a fluorinated surfactant of the
related art which is coated over the blanket 15.
[0054] Referring to FIG. 3, most of the hydrophilic radicals 22 of
the surfactant faces in the direction of the blanket 15, which has
a low surface energy, and the fluorine radical corresponding to the
hydrophobic radical 23 of the surfactant faces the air in the
internal structure of the etch resist solution 14A coated over the
blanket 15.
[0055] Here, the surface energy .gamma. is the energy required for
forming an interface with the air, and a material having a high
surface energy .gamma. has difficulty in forming an interface with
the air. The characteristic of forming the interface with an
opposite surface becomes stronger as the surface energy .gamma. of
the opposite surface of a liquid state or solid state which in
which it contacts becomes lower. That is, the material having the
high surface energy .gamma., if a fluid material having a low
surface energy .gamma. is spread thereon, can make the fluid
material spread widely. Further, the material having the low
surface energy .gamma. does not easily form an interface with the
opposite material, thereby easily separating from the opposite
material and having a strong characteristic of contacting the air.
The surface energy .gamma. is expressed as the sum of a non-polar
surface energy .gamma.d and a polar surface energy .gamma.p, as in
Mathematical Formula 1.
.gamma.=.gamma.d+.gamma.p [Mathematical Formula 1]
[0056] In relation to the surface energy .gamma., TABLE 2
represents .gamma.d, .gamma.p values of each of the blanket 15, the
etch resist solution 14A and the print plate 20.
TABLE-US-00002 TABLE 2 .gamma.d(mN/m) .gamma.p(mN/m) Blanket 18.8
1.6 Etch resist solution 13 0 (fluorinated group surfactant
included) Print plate 52 47
[0057] Here, in order to easily transfer the etch resist solution
14A from the blanket 15 to the print plate 20, the adhesive force
between the etch resist solution 14A and the blanket 15 should be
lower than the adhesive force between the etch resist solution 14A
and the print plate 20.
[0058] That is, as shown in FIG. 4, if the etch resist solution 14A
coated on the blanket 15 is transferred to the print plate 20, the
adhesive force Wb between the etch resist solution 14A and the
print plate 20 should be higher than the adhesive force Wa between
the blanket 15 and the etch resist solution 14A.
[0059] Herein, the adhesive force W according to .gamma.d, .gamma.p
in two interfaces can be shown as in Mathematical Formula 2.
W=2(.gamma. d1*.gamma. d2)1/2+2(.gamma. p1*.gamma. p2)1/2
[Mathematical Formula 2]
[0060] .gamma. d1, .gamma. p1 represent the non-polar surface
energy and the polar surface energy of any one of the interfaces
that are different from each other, and .gamma. d2, .gamma. p2
represent the non-polar surface energy and the polar surface energy
of the other interface between the two different interfaces. The
unit of W is mJ/m.sup.2.
[0061] According to TABLE 1 and Mathematical Formula 2, the
adhesive force Wb between the etch resist solution 14A and the
print plate 20 is about 52, and the adhesive force Wa between the
blanket 15 and the etch resist solution 14A is about 32, thus the
difference between two adhesive forces is not high. Here, the
mathematically-calculated adhesive force Wb of about 52 between the
etch resist solution 14A and the print plate 20 and the adhesive
force Wa of about 32 between the blanket 14 and the etch resist
solution 14A can have an error or deviation in accordance with
variables such as other process conditions. Thus, the difference of
about 20 is not a difference with which a reliable transfer process
can be performed.
[0062] Accordingly, if substantially performing the transfer
process, the characteristic of transferring the etch resist
solution 14A from the blanket 15 to the print plate 20 decreases,
thus the reliability of forming the thin film pattern by the resist
printing method deteriorates.
[0063] In order to solve the problems of the related art, the
invention utilizes a surfactant formed of (or inclusive of) an
ethylene oxide fluorinated polymer material having the general
formula CF.sub.3(CF.sub.2).sub.m(CH.sub.2CH.sub.2O).sub.n where m
is about 1-10 and n is about 8-50, such as
CF.sub.3(CF.sub.2).sub.4(CH.sub.2CH.sub.20)10,
CF.sub.3(CF.sub.2).sub.5(CH.sub.2CH.sub.20).sub.14, etc.
[0064] FIG. 5 shows a diagram of a typical inner structure of the
etch resist solution 14A in a state where the etch resist solution
14A included in the surfactant in the invention is formed on the
blanket 15.
[0065] Referring to FIG. 5, in the internal structure of the etch
resist solution 14A coated on the blanket 15, the surfactant is
divided into a fluorine radical corresponding to the hydrophobic
radical 23 and the hydrocarbon chain 22. The hydrocarbon chain 22
may be, for example, ethylene oxide (CH.sub.2CH.sub.2O), propylene
oxide (CH.sub.2CH.sub.2CH.sub.2O) amine (CH.sub.2N), etc. The
surfactant in the invention having such a structure is a
partially-fluorinated surfactant, and the surface energy of the
surfactant itself is similar to the surface energy (about 35 mN/m)
of a polymer chain, and thus there is no orientation and the
molecules are located randomly with respect to the resist polymer
24.
[0066] As a result, after adopting the interface energy in the
invention, the .gamma.d, .gamma.p values of each of the blanket 15,
the etch resist solution 14A and the print plate 20 are as in TABLE
3.
TABLE-US-00003 TABLE 3 .gamma.d .gamma.p Blanket 18.8 1.6 Etch
resist solution 42.2 2.0 (semifluorinated surfactant included)
Print plate 52 47
[0067] That is, if comparing TABLE 3 with TABLE 2, the .gamma.d,
.gamma.p values of the etch resist solution (semifluorinated
surfactant included) in the invention are known to be remarkably
higher in comparison to the related art of TABLE 2.
[0068] Numerically, the adhesive force Wa between the etch resist
solution 14A and the print plate 20 is about 113, and the adhesive
force Wb between the blanket 15 and the etch resist solution 14A is
about 58. That is, the adhesive force Wa between the etch resist
solution 14A and the print plate 20 is remarkably higher than the
adhesive force Wb between the blanket 15 and the etch resist
solution 14A. Thus, the etch resist solution 14A can be easily
transferred from the blanket 15 to the print plate 20. The
reliability of the transfer process is therefore improved, thereby
making it possible to improve the reliability of forming a thin
film pattern by the resist printing method.
[0069] Afterwards, the thin film pattern can be formed by use of
the devices shown in FIG. 1 in accordance with the method explained
in reference to FIGS. 2B to 2E.
[0070] The gate pattern such as the gate electrode, the gate line,
etc. of the liquid crystal display device can be formed, no matter
how the thin film pattern of the liquid crystal display panel is,
by using the fabricating apparatus and method of the thin film
pattern according to the invention. Further, the invention is not
limited to forming liquid crystal display panels, but includes the
thin film pattern of any display device such as a field emission
display (FED), plasma display panel (PDP), organic electro
luminescence display (OLED), etc. can be formed.
[0071] As described above, the fabricating apparatus of the thin
film pattern and the fabricating method of the thin film pattern
using the same according to the invention uses an etch resist
solution that includes an ethylene or propylene oxide fluorinated
polymer surfactant. The etch resist solution inclusive of the
surfactant has the stronger adhesive force with the print plate
than with the blanket, and it is thereby possible to easily
transfer the etch resist solution from the blanket to the print
plate. As a result, the reliability of forming the thin film
pattern by the resist printing method can be improved.
[0072] Although the invention has been explained by the embodiments
shown in the drawings described above, it should be understood to
the ordinary skilled person in the art that the invention is not
limited to the embodiments, but rather that various changes or
modifications thereof are possible without departing from the
spirit of the invention. Accordingly, the scope of the invention
shall be determined only by the appended claims and their
equivalents.
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