U.S. patent application number 11/833734 was filed with the patent office on 2007-12-13 for electrical charge storage device having enhanced power characteristics.
Invention is credited to William B. JR. Duff.
Application Number | 20070285875 11/833734 |
Document ID | / |
Family ID | 32962703 |
Filed Date | 2007-12-13 |
United States Patent
Application |
20070285875 |
Kind Code |
A1 |
Duff; William B. JR. |
December 13, 2007 |
Electrical Charge Storage Device Having Enhanced Power
Characteristics
Abstract
The present invention relates generally to an electrical charge
storage device (ECSD) with enhanced power characteristics. More
particularly, the present invention relates to enhancing the
current density, voltage rating, power transfer characteristics,
frequency response and charge storage density of various devices,
such as capacitors, batteries, fuel cells and other electrical
charge storage devices. For example, one aspect of the present
invention is solid state and electrolytic capacitors where the
conductor surface area is increased with smooth structures, thereby
reducing the distance separating the conductors, and improving the
effective dielectric characteristics by employing construction
techniques on atomic, molecular, and macroscopic levels.
Inventors: |
Duff; William B. JR.;
(Odessa, TX) |
Correspondence
Address: |
FULBRIGHT & JAWORSKI, LLP
1301 MCKINNEY
SUITE 5100
HOUSTON
TX
77010-3095
US
|
Family ID: |
32962703 |
Appl. No.: |
11/833734 |
Filed: |
August 3, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10793638 |
Mar 4, 2004 |
7289312 |
|
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11833734 |
Aug 3, 2007 |
|
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60452266 |
Mar 5, 2003 |
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Current U.S.
Class: |
361/502 ;
257/E27.048; G9B/7.155; G9B/7.189 |
Current CPC
Class: |
H01M 4/78 20130101; H01G
9/04 20130101; G03G 5/0202 20130101; G11B 7/2572 20130101; H01M
8/0247 20130101; G11B 2007/25715 20130101; Y02E 60/10 20130101;
G11B 7/2578 20130101; H01G 4/01 20130101; H01M 4/66 20130101; H01M
4/667 20130101; G11B 2007/25708 20130101; G11B 7/2532 20130101;
H01M 8/0245 20130101; Y10T 428/249986 20150401; G11B 7/249
20130101; H01G 9/048 20130101; G11B 2007/25706 20130101; Y02E 60/50
20130101; H01G 4/005 20130101; H01L 27/0805 20130101; H01G 4/012
20130101 |
Class at
Publication: |
361/502 |
International
Class: |
H01G 9/155 20060101
H01G009/155; H01G 9/004 20060101 H01G009/004 |
Claims
1-34. (canceled)
35. An electrical charge storage device, comprising: at least one
first conductive layer having a shaped topographical surface; at
least one second conductive layer having a conductive shaped
topographical surface positioned substantially parallel to the
shaped topographical surface of the first conductive layer; and at
least one dielectric layer disposed between the first conductive
shaped topographical surface and the second conductive
topographical surface.
36. The electrical charge storage device as recited in claim 35,
wherein the dielectric layer has opposing first and second
dielectric topographical surfaces, the first dielectric
topographical surface is disposed proximate the first conductive
topographical surface and substantially following the first
conductive topographical surface across its area.
37. The electrical charge storage device as recited in claim 35,
wherein the first conductive surface and first dielectric surface
are substantially conformal.
38. The electrical charge storage device as recited in claim 35,
wherein the second conductive surface and second dielectric surface
are substantially conformal.
39. The electrical charge storage device as recited in claim 35,
wherein the first conductive surface substantially maintains moiety
with the first dielectric surface.
40. The electrical charge storage device as recited in claim 35,
wherein the second conductive surface substantially maintains
moiety with the second dielectric surface.
41. The electrical charge storage device as recited in claim 36,
wherein at least 2% of the area of the first conductive surface has
a shaped topographical surface, said 2% area defining a smooth
structure.
42. The electrical charge storage device as recited in claim 35,
wherein at least 2% of area of the second conductive surface has a
shaped topographical surface, said 2% area defining a smooth
structure.
43. The electrical charge storage device as recited in claim 41,
wherein at least 2% of the area of the first dielectric surface has
a shaped topographical surface, said 2% area defining a smooth
structure.
44. The electrical charge storage device as recited in claim 41,
wherein at least 2% of area of the second dielectric surface has a
shaped topographical surface, said 2% area defining a smooth
structure.
45. The electrical charge storage device as recited claim 41,
wherein at least 2% of the first conductive surface area being
substantially conformal with an area of the first dielectric
surface.
46. The electrical charge storage device as recited in claim 41,
wherein at least 2% of the first conductive surface area
substantially maintains moiety with an area of the first dielectric
surface.
47. The electrical charge storage device as recited in claim 43,
wherein the first conductive surface area being disposed at a
substantially uniform distance from the first dielectric surface
area.
48. The electrical charge storage device as recited in claim 43,
wherein the first conductive surface area being disposed at a
selected distance ranging from 0.0001 .mu.m to 2000 .mu.m from the
first dielectric surface area, said selected distance varying
within a selectable tolerance.
49. The electrical charge storage device as recited in claim 41,
wherein at least 2% of the second conductive surface area being
substantially conformal with an area of the second dielectric
surface.
50. The electrical charge storage device as recited in claim 41,
wherein at least 2% of the second conductive surface area
substantially maintains moiety with an area of the second
dielectric surface.
51. The electrical charge storage device as recited in claim 49,
wherein the second conductive surface area being disposed at a
substantially uniform distance from the second dielectric surface
area.
52. The electrical charge storage device as recited in claim 49,
wherein the second conductive surface area being disposed at a
selected distance ranging from 0.0001 .mu.m to 2000 .mu.m from the
second dielectric surface area, said selected distance varying
within a selectable tolerance.
53. The electrical charge storage device as recited in claim 41,
wherein each of the first and the second conductive surfaces and
the dielectric surface have a substantially smooth structure.
54. The electrical charge storage device as recited in claim 53,
wherein each of the first and the second conductive surfaces and
the dielectric surface comprises a villous structure formed on at
least a portion of the smooth structure of any of the surfaces, the
villous structure having a small scale relative to the smooth
structure.
55. The electrical charge storage device as recited in claims 53,
wherein each of the first and the second conductive surfaces and
the dielectric surface comprises a dendritic structure formed on at
least a portion of the smooth structure of any of the surfaces, the
dendritic structure having a small scale relative to the smooth
structure.
56. The electrical charge storage device of claim 41, wherein at
least a portion of the smooth structure has a repeating
pattern.
57. The electrical charge storage device of claim 41, wherein at
least a portion of the smooth structure of the first and/or second
conductive layer has an area that is alveolar in shape, sinusoidal
rows in shape, parabolic in shape, inverted in shape, everted in
shape, concave in shape, convex in shape, spiral in shape, random
swirl in shape, quasi-random swirl in shape, mathematically defined
as (A)sin(bX)sin(bY), mathematically defined as parabolic,
mathematically defined as conical, tubular in shape, annular in
shape, or toroidal in shape, or embedded in a permeable vertical
fashion.
58. The electrical charge storage device of claim 41, wherein at
least a portion of the smooth structure of the dielectric layer has
an area that is alveolar in shape, sinusoidal rows in shape,
parabolic in shape, inverted in shape, everted in shape, concave in
shape, convex in shape, spiral in shape, random swirl in shape,
quasi-random swirl in shape, mathematically defined as
(A)sin(bX)sin(bY), mathematically defined as parabolic,
mathematically defined as conical, tubular in shape, annular in
shape, toroidal in shape, or embedded in a permeable vertical
fashion.
59-65. (canceled)
Description
RELATED APPLICATIONS
[0001] This Application is a Divisional of U.S. patent application
Ser. No. 10/793,638, filed Mar. 4, 2004, which claims priority to
U.S. Provisional Patent Application No. 60/452,266, filed Mar. 5,
2003.
TECHNICAL FIELD
[0002] The present invention relates generally to an electrical
charge storage device (ECSD) with enhanced power characteristics.
More particularly, the present invention relates to enhancing the
current density, voltage rating, power transfer characteristics,
frequency response and charge storage density of various devices,
such as capacitors, batteries, fuel cells and other electrical
charge storage devices. For example, one aspect of the present
invention is solid state and electrolytic capacitors where the
conductor surface area is increased with smooth structures, thereby
reducing the distance separating the conductors, and improving the
effective dielectric characteristics by employing construction
techniques on atomic, molecular, and macroscopic levels.
BACKGROUND OF THE INVENTION
[0003] Electrical capacitors are electrical charge storage devices
composed generally of a pair of conductors separated by a
dielectric material. Capacitors may be used in both direct current
(DC) and alternating current (AC) applications for a variety of
purposes, including energy storage, signal coupling, motor
starting, motor running, power factor correction, voltage
regulation, VA efficiency, tuning, resonance, surge suppression,
and filtration. In either AC or DC networks, capacitors may be
arranged in series, shunt, and hybrid configurations to provide
many operational advantages, both transient and steady state. For
example, shunt capacitors can serve as current sources or voltage
sources in both AC and DC applications and provide VAR support and
power factor correction in AC applications.
[0004] In transient AC networks, capacitors can be used to improve
power factor during transient conditions, which results in
increased efficiency or other desirable enhancements. Transient
applications of series capacitors include voltage surge protection,
motor starting, current limiting, switching operations, and the
like. For example, low power factor transient currents are
associated with fault currents and inrush currents due to motor
starting and transformer magnetization. Series capacitors can
moderate these effects by improving overall power factor and
network voltage regulation during the transient condition. In
addition, series capacitance can provide a degree of current
limiting during transient conditions as a result of the series
impedance of the capacitor, thus reducing the magnitude of fault
currents and, as a result, reducing generator, transformer,
switchgear, bus and transmission line requirements. Further,
mechanical stress associated with bringing additional generation
capacity on line can be moderated by the presence of series
capacitive coupling. While these and many other series capacitor
advantages are well known, unit cost, size requirements, voltage
limitations, current limitations, dv/dt limitations, di/dt
limitations, insulation limitations, dielectric limitations,
electromechanical limitations and thermodynamic limitations, have
prevented widespread implementation of series capacitors,
especially in low frequency applications.
[0005] Steady state AC network characteristics also can be improved
through the incorporation of capacitors. For example, high
capacitance, series applications impress a low steady state AC
voltage on the capacitor, which can be beneficial when electrical
transfer devices are used in conjunction with series capacitor
banks. Similarly, electrical wave distortion can be reduced by
altering capacitance. Certain electrical circuit parameters are
optimized through impedance matching or detuning of series
capacitors. Other circuits can be enhanced by the use of capacitors
to provide current limiting and/or voltage division. Steady state
series capacitor applications include motor running, filtration,
power factor correction, efficient power transfer, voltage
boosting, and the like. Series, shunt and hybrid capacitor
arrangements can be employed to enhance motor torque, speed,
efficiency, power, power factor, VA efficiency, coupling and the
like. Various capacitor bank and motor winding configurations can
also allow induction generators to power induction motors by
providing the required magnetizing currents for both devices. In
such an application, power quality can be improved, while reducing
the cost of electric grid alternative sources, emergency power
supplies, mobile equipment, and portable generators. Further,
operational variation of capacitance and capacitive reactance can
be used to enhance electrical network steady state performance.
[0006] The characteristics of DC networks also can be improved
through the use of capacitors. In DC networks, capacitors can be
used to moderate rapid changes in DC network voltage, to store
energy for sudden increases in demand, and to absorb energy when
the DC network is subjected to sudden increases in source current
or decreases in load current. Capacitors are used to block DC. They
are further employed to couple signals in predominantly DC
applications and in resonant DC links. However, low ratios of
instantaneous and steady state power capability to total stored
energy tend to limit the operating utility of capacitors in DC
applications. High ESR and overheating often limit the utility of
conventional capacitor selections such as electrolytic capacitance
in DC and signal coupling applications.
[0007] Capacitors typically are categorized as either non-polar or
polar; and there are many realizations of each category.
Non-polarized capacitors generally are useful in both DC and AC
applications. Unfortunately, non-polarized capacitors--especially
in series configurations--are not well-suited for many AC and DC
applications due to limitations in size, capacitance, weight,
efficiency, energy density, and cost. Singular polarized capacitors
traditionally have been limited to use in DC and small AC signal
coupling applications due to their unidirectional, forward biasing
requirements. In addition, anti-series polarized capacitors can be
used in transient applications, such as motor starting, and
forwardly biased anti-series polarized capacitors can be
continuously operated in AC applications. In DC applications,
polarized capacitors are widely used for filtering, such as in the
output stage of DC power supplies. Polarized capacitors are also
used to couple signals between amplifier stages. Finally, polarized
capacitors have historically been used as rectifiers.
[0008] Non-polarized capacitors commonly are constructed of two
conductors separated by a dielectric or insulator. The conductors
typically are made of a conductive material, such as copper,
aluminum, other metal, or doped semiconductor. The dielectric or
insulator may be composed of air, mica, oil, paper, plastic or
other compound. Non-polarized capacitors also may be constructed as
metalized film capacitors which are composed of a thin layer of
plastic having metalized surfaces. The capacitance of non-polarized
capacitors generally is limited by the surface area of the discrete
conductors, the distance separating the conductors, and the
dielectric constant. The rated voltage of such capacitors is
limited by the dielectric constant, dielectric strength, and
material and fabrication defects. The current and rate of change of
current (i.e., di/dt) is limited by the, ESR, mechanical strength
and thermodynamic properties of the particular capacitor materials
and structure. Metalized film capacitors routinely short at points
of minimum dielectric thickness. The subsequent burn through or
fault clearing is sometimes referred to as self healing. Perhaps
progressive self destruction would be a more accurate description
of this behavior. The failure mechanism of shorting and then burn
through can be disruptive in sensitive circuits such as digital
devices. Further, metalized film capacitors tend to poorly
dissipate heat. This creates internal hot spots and tends to
accelerate capacitor failure.
[0009] Parallel-plate-type capacitors generally constitute the most
common commercial realizations of the non-polarized capacitor. In
such implementations, dielectric breakdown and failure of such
capacitor embodiments often are associated with concentrations of
charge accumulations at corners and sharp points of the conductive
plates and material defects and variation of thickness in high
electric field conditions. Although the capacitor can be designed
and the dielectric material chosen such that the capacitor
theoretically should withstand such conditions, conventional
macroscopic manufacturing methods often do not provide the accuracy
and control needed to ensure that the fabricated capacitor can
perform at its theoretical capability. For example, conventional
techniques cannot ensure that sharp corners or burrs on the
conductors will be avoided, or that the thickness of the dielectric
material will be uniform throughout its area, or that the
dielectric will be disposed on the conductors in a conformal
manner. Further the surface area of parallel-plate-type capacitors
has been generally limited to flat place construction and
conventional enhancement techniques such as plate sharing and
spiral wound packaging.
[0010] Polarized capacitors have enhanced surface area as compared
to non-polarized capacitors, which, unfortunately, introduces
additional capacitor components, a charge transport mechanism, and
additional losses. For example, the physical composition of one
commonly used polarized capacitor--an electrolytic
capacitor--includes a conductor, anode foil, anodized layers,
liquid impregnated paper layer, insulation paper layer, cathode,
and conductor. The construction methods and loss mechanisms for
other polarized devices (symmetric and asymmetric) such as super
capacitors, ultra capacitors and double layer capacitors are
similarly well known. However, polarized capacitors (as well as
other polarized electric charge storage (PECS) devices), generally
have a low cost per unit of capacitance and smaller mass and
dimensions as compared with their non-polarized counterparts. These
characteristics favor the use of polarized capacitors over
non-polarized capacitors.
[0011] Despite these advantageous properties, polarized capacitors
also have their drawbacks. The electrically directional capacitance
versus rectification circuit behavior due to electron tunneling is
often disadvantageous. As another example, polarized capacitors
exhibit a higher equivalent series resistance (ESR) at power
frequencies than the non-polarized type due to the resistance of
the paper/electrolyte and power losses in the oxide (i.e.,
dielectric) layer. Further, electrolytic capacitors outgas hydrogen
due to the electrolysis of water, and ion transport limitations and
conductor termination practices tend to contribute to a steep
frequency response curve. Still further, the maximum AC ripple
current that can be tolerated by electrolytic capacitors is limited
by the ESR, rated voltage and the thermodynamic, mechanical, and
venting properties of the capacitor package that allow it withstand
the resultant heat and pressure buildup without rupturing. Further,
the most commonly used material, aluminum, requires great energy to
refine conventionally. The anode etching and forming process then
requires additional large inputs of energy, chemical processing and
handling. Other conventionally constructed polarized charge storage
devices suffer innumerable similar disadvantages.
[0012] Certain known methods exist for improving the thermodynamic
properties of polarized capacitors. These methods include
increasing thermal mass by increasing foil thickness, increasing
fluid volume and the use of thicker can material. It is also
possible to increase heat dissipation by reducing the thermal
resistance to heat flow. This is accomplished by such methods as
crimping the cathode foil to the can, increasing the surface area
of the can internally and externally and creating additional
thermal structures such as cold fingers, headers and stud mounting.
Another known methods include increased air flow, circulating fluid
and other external heat control methods. Finally increased
radiation and conduction can be achieved by means of increasing the
capacitor allowable operating temperature. These methods, though
somewhat effective tend to increase costs substantially and in many
cases substantially increase the physical size and weight of the
components.
[0013] Typically, for both polarized and non-polarized discrete
capacitors, neither the theoretical dielectric strength nor the
theoretical dielectric constant, have been effectively realized due
to material imperfections, imprecise manufacturing processes, and
boundary interface problems. These factors, in turn, limit both the
maximum rated device voltage and capacitance that may be attained
for a given capacitor implementation. Still further, imbalances in
conduction current and displacement current capabilities combined
with inconsistent material properties limit the transient and
sustained current capabilities for a given capacitor. Structural
thermodynamic limitations further tend to limit transient and
steady state electrical current capabilities and capacitor
operational lifetime. Accordingly, there is a need to provide
improved capacitors and methods for fabricating capacitors that
result in increased capacitance, voltage and current ratings, and
power delivery.
[0014] It is well known that capacitance in flat plate capacitors
is governed by the following equation: C=E.sub.0E.sub.RA/d where
E.sub.0 is the permittivity of free space, E.sub.R is the relative
permittivity of the dielectric, A is the common surface area of the
conductors, and d represents the distance between conductors. From
the foregoing equation, it can be seen that capacitance can be
increased by increasing the common surface area A of the
conductors. FIG. 1 shows an instantaneous charge accumulation on
the conductor plates 10 and 11 of a generalized capacitor 15 having
a planar surface for the conductive layers. Microscopic charge
displacement in the dielectric allows current flow. Positive and
negative charges are shown. A dielectric layer 13 is disposed
between the conductor plates 10 and 11.
[0015] An example of a known technique for increasing surface area
can be seen in FIG. 2, which represents a magnified cross-sectional
view of an exemplary embodiment of a polarized electrolytic
capacitor 20 having conductor foils 22 and 24. The surface area of
the foils 22 and 24 is increased by acid etching the conductors
such that microchannels 26 are formed. The microchannels 26
typically are on the order of 40 .mu.m by 1 .mu.m and have sharp
edges. The high purity aluminum anode 22 is oxidized by known large
scale fabrication methods to create a thin film of aluminum oxide
in either crystalline, polycrystalline or amorphous form to create
a dielectric layer 28 having a relative dielectric constant E.sub.R
of approximately 9. The insulation rating, corresponding to such a
dielectric constant is generally; on the order of 1.1 nM/V.
[0016] It can be seen from FIG. 2 that the effective surface area
of the conductor foils is increased substantially as a result of
the broom-straw-like structure. However, it is difficult to charge
the capacitor, particularly at high voltages due to spatial
distance variations between the extremities of the broom-straw-like
structures and the attendant displacement current limitations. To
remedy this inherent weakness, an additional charge transport
mechanism is introduced in the form of a paper wet with an
electrolytic solution to provide a pathway for electrical charges
to reach the enhanced surface area of the conductor during the
charging process.
[0017] The configuration illustrated in FIG. 2 has many
characteristics which ultimately limit the performance and
longevity of the capacitor. For example, negative ions, which
travel from the cathode foil to the anode foil through the wetted
paper during the charging process, increase the ESR of the
capacitor and limit ripple current ratings. Hydrogen gas emitted
during the charging process due to the electrolysis of water must
be vented. Mechanical weakness of the structure and required
anodization thickness limit capacitor rated voltage. And, although
the microchannels serve to increase the surface area of the
conductors, the effect of this enhancement is reduced from two
orders of magnitude to one order of magnitude as rated voltages are
increased.
[0018] Another drawback to aluminum electrolytic capacitors is the
enormous quantity of energy required for fabrication. Aluminum has
been referred to as congealed electricity. The energy required for
high purity aluminum, such as required for anodic foil is greater
still. Conventional manufacturing typically requires processing
with first strong alkaline and then strong acid chemical baths in
an impressed electrical field. Several washes of high purity water
are also required. Great amounts of electrical power are required
for heating, oxidizing and forming the aluminum foil and tab
materials. The electrolyte solution is often a petrochemical such
as ethylene glycol mixed with water and other chemicals such as
acids or bases. Winding, wetting and stuffing operations are
followed by final electrical formation steps. These steps and
inputs are highly energy intensive. Thus, conventional
manufacturing techniques for aluminum electrolytic capacitors
require a substantial quantity of energy.
[0019] Anti-series pairs of polarized capacitors suffer from
several disadvantages. First if the pair is unbiased, one device
acts as a capacitor while the other component acts as a diode. This
operating condition alternates every half cycle and greatly
shortens capacitor assembly life and is a source of electrical
harmonic current and ground reference voltage disturbances. When
equal size, anti-series capacitors are biased, the capacitance of
the assembly is cut approximately in half. ESR and related high
dissipation factor are increased for the assembly, as they are
series additive electrical phenomena.
[0020] Small-scale manufacturing techniques also are known for
fabricating capacitors. For example, semiconductor manufacturing
techniques are used to create capacitors in solid state integrated
circuit devices. Because an object of integrated circuit memory
designs is to create short half life circuits at low voltages, such
designs focus on reducing capacitance often and favor lower
dielectric constants rather than increasing capacitance and
enhancing power delivery characteristics. Where high dielectric
constants and current density have been favored in these
applications the purpose is generally in pursuit of miniaturization
and ever lower capacitance. Decoupling capacitors act as localized,
low impedance voltage sources; thus furnishing noise free power to
synchronous integrated circuits. Printed circuit board electrical,
thermal and mechanical limitations severely limit integrated
capacitor materials and construction techniques. Also integrated
capacitance variation cannot be easily controlled using
conventional manufacturing techniques.
[0021] Other polarized electrical charge storage device research
has revolved around increasing total energy storage and has
resulted in the development of super capacitors, ultra capacitors
or double layer capacitors. Such capacitors are intended to bridge
the gap between electrochemical batteries and polarized capacitors,
such as liquid tantalum and aluminum electrolytic capacitors.
Energy storage capability is increased in super, ultra and double
layer capacitors by enhancing conductor surface area and volume
charge storage capabilities by large-scale manufacturing techniques
such as those described in U.S. Pat. No. 5,876,787, entitled
"Process of Manufacturing a Porous Carbon Material and Capacitor
having the Same."
[0022] Super capacitors, ultra capacitors and double layer
capacitors, however, have many limiting characteristics which
inhibit their usefulness for power applications. For example, such
capacitors have relatively low voltage ratings (i.e., 1V-3V per
cell) and tend to have relatively high ESR, both of which are not
positive attributes in applications having power transfer as an
object. Further, the devices are polarized charge storage devices,
thus restricting their usefulness in AC power applications.
Further, such devices often fail to deliver the full charge stored
on demand. A great deal of the stored charge can remain
unavailable. This observed characteristic has a time dependant
component and a time invariant component. Not all the stored energy
which can be put to use, can be released instantaneously, making
the devices less suitable for rapid rate charge and discharge
applications. The second mechanism by which the stored charge
remains unavailable for convenient use is the phenomenon of trapped
energy. Series assemblies comprised of capacitors of various sizes
and charge levels will retain a significant and measurable voltage
trapped within, at the end of discharge. The low cell voltages of
super, ultra and double layer capacitors require many cells to
achieve common system voltages. This phenomenon can also be
observed in electrochemical battery discharges and is sometimes
referred to as cell inversion.
[0023] Improvements in power delivery and end use systems can have
a significant impact on today's economy and environment. More
particularly, electrical motors presently consume about 65% of
metered real power. To illustrate the improvements that can be
realized, assume that an example motor has a 50% power factor and
that the remaining 35% of metered load is purely resistive. Thus,
the total Volt-Amps (VA) of the combined load is 119.27% of the
real power, and the 35% resistive load is only 29.24% of the total
VA load. Accordingly, the motor load in this example is greater
than 70.75% of the system total VA load. Capacitors arranged in
series, shunt, and hybrid configurations can help economically to
correct motor power factor and reduce the economic and
environmental consequences associated therewith. Further, certain
LC motor designs have been demonstrated to provide increased motor
efficiency, torque, power factor, vibration, phase-leg-loss and
other desirable motor properties over purely magnetic designs thus
also improving economics and the environment.
[0024] Such improvements in power delivery and end use systems and
the accompanying benefits can be realized by an enhanced discrete
non-polarized capacitor having increased capacitance, heat
dissipation and power transfer capabilities. Such improvements also
could be realized by an enhanced discrete polarized capacitor
having increased capacitance, increased voltage and ripple current
ratings, reduced ESR, and improved heat dissipation and power
transfer characteristics. The improved discrete capacitor
characteristics and methods can also be beneficially applied to
integrated circuits, digital chips and other electrical
devices.
BRIEF SUMMARY OF THE INVENTION
[0025] As used herein, the term "a" or "an" may mean one or more.
As used herein in the claim(s), when used in conjunction with the
word "comprising", the words "a" or "an" may mean one or more than
one. As used herein, "another" may mean at least a second or
more.
[0026] The term "AC" and "AC source" are used in their broad sense.
The term AC and AC source shall include but are not limited to
fixed frequency, variable frequency, fixed amplitude, variable
amplitude, frequency modulated, amplitude modulated, and/or pulse
width modulated AC. Other signal and/or communication techniques
including sideband and superposition as well as other linear,
nonlinear, analog or digital signals and the like are expressly
included. AC sources may include harmonic components. AC and AC
source are considered to refer to time varying signals. These
signals may contain data and/or power. Hybrid AC sources varying in
multiple methods and/or modes are similarly included. References to
a single AC source shall not be construed to eliminate plural AC
sources.
[0027] As used herein the terms "adhese", "adhesion", "adhesed" and
"adhere", shall include without limitation, methods, forces,
mechanisms, techniques and materials whereby atom to atom, molecule
to molecule and layer to layer bonding, gluing, sticking, adhering,
attraction, affinity, sharing, and other methods, forces and
materials used to secure, fasten, bond, connect, interconnect,
weave, interweave, lock and key, or otherwise hold together like
and/or dissimilar materials. This process shall include without
limitation, nano, micro and macro connection and
interconnection.
[0028] As used herein, the term "anodized" shall mean to subject a
metal to electrolytic action at the anode of a cell in order to
coat with a protective, insulated or decorative film.
[0029] As used herein, the term "capacitor" shall mean an
electrical circuit element which is based on phenomena associated
with electric fields. The source of the electric field is
separation of charge, or voltage. If the voltage is varying with
time, the electric field is varying with time. A time-varying
electric field produces a displacement current in the space
occupied by the field. The circuit parameter of capacitance relates
the displacement current to the voltage. Energy can be stored in
electric fields and thus in capacitors. The relationship between
the instantaneous voltage and current of capacitors and the
physical effects upon the capacitor are critical to capacitor
improvements.
[0030] As used herein, the term "conductor" shall mean a material,
such as a metal, which contains a large number of essentially free
charge carriers. However, the term conductor is not limited to only
a metal. These charge carriers are free to wander throughout the
conducting material. They respond to almost infinitesimal electric
fields, and they tend to continue to move as long as they
experience a field. These free carriers carry the electric current
when a steady electric field is maintained in the conductor by an
external source of energy. Under static conditions, the electric
field in a conductor vanishes. Conductors, include without
limitation superconductors, high temperature superconductors, doped
semiconductors, metalized films and the like are considered
conductors when used for these purposes. A conductive layer is that
layer or layers of the capacitor that forms a conductor. The
conductive layer may be formed of a conductive polymer.
[0031] As used herein, the term "conformal" shall mean without
limitation having the same operable shape with consistent
dimensions.
[0032] As used herein, the term "conformal coating" shall mean
without limitation the touching and/or bonding of one layer to
another. The shapes of the two layers at their interface or
boundary shall be matched as closely as practicable. If layer `A`
is concave in a region, then layer `B` must be convex in this
region to achieve this effect. The convex layer `B` must be smaller
than the concave layer `A` in order to achieve this effect. In
general, the tighter the fit of the conformal coating, the greater
the bond strength and conformance of the conformal coating; and
this provides a superiority of the boundary characteristics.
Preferably, uniformity of conformal coating thickness is
desirable.
[0033] As used herein, the terms "DC", "DC electricity" and "DC
current" may be any technology, design, condition, physical
condition or device, creating, causing, contributing, supporting,
or favoring a unidirectional or predominantly unidirectional flux,
displacement, transmission and/or flow of one or more electrical
charge carriers including but not limited to electrons, ions and
holes. This shall not be construed to exclude the bidirectional
travel of oppositely charged particles. DC shall refer broadly to a
steady state voltage that does not substantially vary with
time.
[0034] As used herein, the terms "DC source", "DC voltage source"
or "DC power source" is used in its broad sense. This term
generally covers and includes any method and device used or useful
in the generation, production or AC rectification to produce DC
electricity. DC power supplies expressly include, but are not
limited to DC generators, electrochemical batteries, photovoltaic
devices, rectifiers, fuel cells, DC quantum devices, certain tube
devices and the like. They shall include regulated, unregulated,
filtered and non-filtered types. DC sources shall expressly include
but are not limited to rectifiers powered by non-electrically
isolated sources, autotransformers, isolation transformers, and
ferroresonant transformers. DC-to-DC supplies, switching DC power
supplies, pulse chargers and the like are similarly included. The
singular term shall not be construed to exclude multiple and/or
redundant DC sources in shunt, series and/or anti-series
configurations. Single phase and polyphasic rectified DC sources
and/or chargers are included. The ability to adjust the DC bias
level in real time is similarly included. The use of `diode dropper
devices` and precisely regulated floating DC power supply voltages
can provide operational and design benefits, especially where
electrochemical batteries are included for power source redundancy,
or are the anti-series PECs device employed.
[0035] As used herein, the term "dielectric" shall mean a substance
in which all charged particles are bound rather strongly to
constituent molecules. The charged particles may shift their
positions slightly in response to an electric field, but they do
not leave the vicinity of their molecules. Real dielectrics exhibit
a feeble conductivity, but can generally be characterized as
nonconductive. The electric field causes a force to be exerted on
each charged particle, positive charges being pushed in the
direction of the field, negative charges oppositely, so that
positive and negative parts of each molecule are displaced from
their equilibrium positions opposite directions. Dielectrics
increase capacitance, increase maximum operating voltage and
provide mechanical support between the conducting plates of a
capacitor. There are various classes of dielectrics with
exploitable characteristics. A dielectric layer is that layer or
layers that form the dielectric of the capacitor.
[0036] As used herein, the term "dielectric constant" shall mean
relative to that of a vacuum.
[0037] As used herein, the term "dielectric strength" shall mean
the maximum strength which a dielectric can withstand without
breakdown. If the electric field in a dielectric is made very
intense, it will begin to excite large numbers of electrons to
energies within the conductive band. This dislodges the excited
electrons completely out of the molecules, and the material will
become conductive in a process known as dielectric breakdown.
[0038] As used herein, the term "electrolyte" shall mean a material
which exhibits electrical properties midway between conductors and
dielectrics. Electrolytes are typically in the liquid phase in
ambient weather conditions. Additives and impurities alter the
electrical characteristics of electrolytes and electrolytic
solutions.
[0039] As used herein, the term "enhanced surface" shall mean an
increased surface area over all or a portion of a conductor layer
or over all or a portion of a dielectric layer. The portion shall
be considered enhanced when the surface area is enhanced over a
gross area comprising greater than or equal to 2% of the nominal
dimensions of the surface or region. For example, there will
routinely be a border or boundary region surrounding the increased
surface area which border region does not have enhanced surface
area. For example, an enhanced surface area of a conductive or
dielectric is surface area for a particular layer (conductive or
dielectric) that has greater surface area than would a planar
surface which has an area determined by multiplying its length by
its width.
[0040] As used herein, the term "moiety" shall mean one of two
approximately equal parts or basic and complementary divisions of
the whole.
[0041] As used herein, the term "semiconductor" shall mean a
material having electrical properties midway between conductors and
dielectrics. Semiconductors are typically in the solid phase in
ambient weather conditions. Additives, impurities and dopants alter
the electrical characteristics of semiconductors.
[0042] As used herein, the term "polarized capacitor" shall include
without limitation, other polarized electric charge storage (PECs)
devices, such as electrochemical batteries, fuel cells, liquid
tantalum capacitors, electrolytic capacitors, super capacitors,
ultra capacitors, quantum devices and the like.
[0043] As used herein, the term "sharpy" shall mean a surface that
can be characterized as having sharp points, angles, rapid changes
of direction, dip, strike, and pitch, as well as abrupt
demarcations and the like.
[0044] As used herein, the term "smooth" shall mean a surface that
is relatively free of sharp points, angles, rapid changes of
direction, dip, strike, and pitch, as well as minimally abrupt
demarcations and the like.
[0045] As used herein, the term "topographical surface" shall mean
a surface that is 3-dimensional in shape. The 3-dimensional surface
may include any structure or projection extending from the
surface.
[0046] As used herein, the term "undulation" or "undulating" shall
mean a rising and falling in wavelike fashion. Undulating surfaces
shall present a wavy appearance, surface, boundary or margin.
[0047] As used herein, the term "uniform" shall mean with respect
to a distance that the distance between opposing surfaces of a
conductive layer and a dielectric layer are of an equal distance.
With respect to the thickness of the dielectric layer, it means
that the layer has a relatively constant thickness.
[0048] The following discussion contains illustrations and examples
of preferred embodiments for practicing the present invention.
However, they are not limiting examples. Other examples and methods
are possible in practicing the present invention.
[0049] The present invention relates to enhancing the current
density, voltage rating, power transfer characteristics, and charge
storage density of solid state and electrolytic capacitors by
increasing the conductor surface area with smooth structures,
reducing the distance separating the conductors, and improving the
effective dielectric characteristics by employing construction
techniques on the atomic and molecular levels.
[0050] The present invention relates generally to an electrical
charge storage device (ECSD) with enhanced power characteristics.
More particularly, the present invention relates to enhancing the
current density, voltage rating, power transfer characteristics,
and charge storage density of various devices, such as capacitors,
batteries, fuel cells and other electrical charge storage devices.
Electrical charge storage device electrical functions include
conduction current and displacement current. They may also include
mass transport, ion transport and charge generation by
electrochemical means. Electrical charge storage device thermal
functions include heat generation, heat conduction and heat
radiation. For example, one aspect of the present invention is
solid state and electrolytic capacitors where the conductor surface
area is increased with smooth structures, thereby reducing the
distance separating the conductors, and improving the effective
dielectric characteristics by employing construction techniques on
atomic, molecular, and macroscopic levels. The sizes, physical,
quantum and electrical properties of the atoms and molecules
forming the conductors and dielectrics, as well as--when employed
the electrolyte chemical constituents--, will greatly vary.
Similarly the application requirement temperature, pressure,
mechanical forces and volume constraints will vary over wide
ranges. The electrical applications will similarly vary over wide
ranges in terms of voltage, current, frequency, capacitance
required, transient demands, steady state demands, frequency
responses, desirable stability and operational variation
preferences and the like. Thus, many specific materials, material
properties, structures, topologies, surface area enhancement
methods, temperature control mechanisms, strengths, construction
mechanisms, scales, sizes and packaging methods will be employed in
a plethora of preferred implementations and embodiments of the
present invention.
[0051] One aspect of the present invention is an electrical charge
storage device exhibiting enhanced power characteristics.
[0052] Another aspect of the present invention is an increase in
surface area within a spatial area or volume.
[0053] Another aspect of the present invention is an increase in
surface area combined with a reduction in charge separation
distance.
[0054] Yet another aspect of the present invention is an electrical
charge storage device exhibiting increased structural strength.
[0055] Fundamental physical properties of solid state substances
such as crystals depend upon the periodicity of the solid, over a
specific dimensional scale, typically in the nm regime. These
physical properties include dielectric constant, dielectric
strength, conductivity, band gap, ionization potential, melting
point and magnetic saturation. Precise control of the size and
surface of solid state substances such as nanocrystals,
polycrystals, crystals, interstitials, amorphous materials, metals
and alloys can tune their properties. Techniques of atomic and
molecular assembly can create new materials and products such as
interstitial, nanocrystal and nanopoly-crystalline based
materials.
[0056] In one implementation of the present invention, molecular
makeup is varied to achieve conductive and nonconductive structures
for construction of charge storage mechanisms by variation of the
layers and numbers of layers of the underlying materials.
[0057] In one implementation the present invention has conductive
and dielectric layers that mechanically support each other thereby
providing increased strength. When an electric potential is
impressed across the present invention the charge will not have
sharp corners to accumulate at. During short circuits, motor power
circuit reclosure, motor starting, motor locked rotor and
transformer magnetizing inrush the mechanical strength of the
device will help to prevent mechanical damage. The increased
current to capacitance capabilities will allow higher currents
without heat damage. Reduced voids, impurities, increased moiety,
combined with atom by atom construction methods and quantum forces
will additionally work to increase strength in the present
invention.
[0058] Above a critical number of atoms, one particular bonding
geometry; characteristic of an extended solid "locks in." As
additional atoms are added, the number of surface atoms and the
spatial volume change, but the basic nature of the chemical bonds
in the cluster is not altered. Nanocrystal properties, slowly and
smoothly extrapolate to large scale, according to scaling laws and
heuristics.
[0059] In one embodiment, there is an electrical charge storage
device which is macroscopically viewed as a flat plate capacitor,
coaxial capacitor/conductor or other electrical waveguide which is
so constructed as to enhance the surface area of the capacitor,
conductor or waveguide.
[0060] In one embodiment, there is an electrical charge storage
device which is macroscopically viewed as a flat plate capacitor,
coaxial capacitor/conductor or other electrical waveguide which is
so constructed as to enhance the electrical characteristics of the
capacitor, conductor or waveguide.
[0061] In one embodiment, there is an electrical charge storage
device which is macroscopically viewed as a flat plate capacitor,
coaxial capacitor/conductor or other electrical waveguide which is
so constructed as to enhance the thermodynamic characteristics of
the capacitor, conductor or waveguide.
[0062] In one embodiment, there is an electrical charge storage
device which is macroscopically viewed as a flat plate capacitor,
coaxial capacitor/conductor or other electrical waveguide which is
so constructed as to enhance the mechanical characteristics of the
capacitor, conductor or waveguide.
[0063] In one embodiment, there is an electrical charge storage
device that includes at least one smooth, undulating conducting,
substrate surfaces. A second smooth layer, composed of dielectric
is fabricated in intimate contact with the conducting layer, which
dielectric layer conformally coats the substrate. At substantially
every point, the undulating surface of the dielectric maintains
moiety with the conductive substrate. A third smooth layer, of
conductive, smooth undulating material is fabricated in intimate
contact with the dielectric. Moiety is maintained throughout the
surfaces such that the three layers undulate in a three dimensional
matching fashion. One simple structure can be conceptually
illustrated as resembling two sheets of corrugated iron separated
by a sheet of corrugated plastic. Variation in dielectric thickness
and strength will vary the rated capacitor voltage for a given
dielectric relative permittivity. Variations in magnitude and
period will alter the surface area enhancement over that of a flat
sheet. Variation in relative permittivity of the dielectric will
alter the required separation distance for a given voltage. The
capacitance is determined by the relative permittivity, effective
surface area and distance separation. The capacitive reactance is
further determined by the electrical frequency, the structure and
the frequency response of the materials. If on the other hand, the
two pieces of corrugated iron are separated by a stiff piece of
flat plastic and the relative peaks of the top and bottom layer of
the corrugated iron are adjacent to each other, then there is
expanded surface area, but there is not expanded useful surface
area.
[0064] In one embodiment of the invention, there is an electrical
charge storage device that has a first conductive layer having a
first conductive surface; a dielectric layer having opposing first
and second dielectric surfaces, the first dielectric surface having
a substantially conformal surface with the first conductive
surface; and a second conductive layer having a second conductive
surface disposed adjacent to the second dielectric surface. The
first and/or second conductive surfaces have a conductive substrate
with a smooth, enhanced surface area which is constructed.
Additionally, a conformal smooth layer of dielectric is deposited
in intimate contact with the substrate. A conformal second
conductive layer or substrate is then fabricated in intimate
contact (moiety) with the open side of the conformal layer of
dielectric to form a capacitor cell. The regionally symmetric
dielectric layer will give rise to a displacement current when an
electric potential is impressed across the said dielectric layer.
The at least two conductive substrates may be terminated for
electrical connection to other electrical circuit elements. Or, in
the alternate, the process can continue, building an additional
capacitor layer for connection in series or shunt.
[0065] In another embodiment of the invention, there is an
electrical charge storage device that has at least one first
conductive layer having a conductive curvilinear surface; at least
one second conductive layer having a conductive curvilinear
surface; and at least one dielectric layer disposed between the
first conductive curvilinear surface and the second conductive
curvilinear surface.
[0066] In another embodiment of the invention, there is an
electrical charge storage device that has a first conductive layer
having a first conductive curvilinear surface, a dielectric layer
having opposing first and second dielectric curvilinear surfaces,
the first dielectric curvilinear surface disposed proximate the
first conductive curvilinear surface and substantially following
the first conductive curvilinear surface across its area, and a
second conductive layer having a second conductive curvilinear
surface, the second conductive curvilinear surface disposed
adjacent the second dielectric curvilinear surface and
substantially following the second conductive curvilinear surface
across its area.
[0067] In still yet another embodiment of the invention, there is
an electrical charge storage device that has a first conductive
layer having a first conductive smooth, enhanced surface; a
dielectric layer having opposing first and second dielectric
surfaces, the first dielectric smooth, enhanced surface disposed
proximate the first conductive smooth, enhanced surface and
substantially following the first conductive smooth, enhanced
surface; and a second conductive layer having a second conductive
smooth, enhanced surface, the second conductive smooth, enhanced
surface disposed adjacent the second dielectric surface and
substantially following the second conductive smooth enhanced
surface.
[0068] In another embodiment of the invention, there is an
electrical charge storage device that has a first conductive layer
having a first conductive surface; a dielectric layer having
opposing first and second dielectric surfaces, the first dielectric
surface having a substantially conformal surface with the first
conductive surface; and a second conductive layer having a second
conductive surface disposed adjacent to the second dielectric
surface.
[0069] In another embodiment of the electrical charge storage
device, there is an electrical charge storage device that has a
first conductive layer having a first conductive surface; a
dielectric layer having opposing first and second dielectric
surfaces, the first dielectric surface substantially maintaining
moiety with the first conductive surface; and a second conductive
layer having a second conductive surface disposed adjacent to the
second dielectric surface.
[0070] In another embodiment of the electrical charge storage
device, at least one first conductive layer, having a shaped
topographical surface; at least one second conductive layer having
a conductive shaped topographical surface; and at least one
dielectric layer disposed between the first conductive shaped
topographical surface and the second conductive curvilinear
surface.
[0071] In one embodiment, the electrical charge storage device has
a first conductive surface and a first dielectric surface that are
substantially conformal.
[0072] In one embodiment, the electrical charge storage device has
a second conductive surface and second dielectric surface that are
substantially conformal.
[0073] In one embodiment, the electrical charge storage device has
the first conductive surface substantially maintains moiety with
the first dielectric surface.
[0074] In one embodiment, the electrical charge storage device has
the second conductive surface substantially maintains moiety with
the second dielectric surface.
[0075] In one embodiment, the electrical charge storage device has
at least 2% of the first conductive surface area being conformal
with an adjacent area of the first dielectric surface. With this
particular percentage area being conformal, the electric storage
device should exhibit enhanced power characteristics. Preferably,
the two areas should be substantially conformal. In some instances,
however, the surfaces may be constructed such that they are exactly
conformal. For example, the two areas should be essentially-exact
images of one another. However, the areas may be substantially
conformal such that increased power characteristics of the device
are achieved.
[0076] In one embodiment, the electrical charge storage device has
at least 2% of the first conductive surface area maintaining moiety
with an adjacent area of the first dielectric surface.
Additionally, the second conductive surface area preferably should
maintain moiety with an adjacent area of the second dielectric
surface. With this particular percentage areas maintaining moiety,
the electric storage device should exhibit enhanced power
characteristics. Preferably, the two areas should maintain exact
moiety. However, the areas may maintain substantial moiety such
that increased power characteristics of the device are achieved.
For example, there will routinely be a border or boundary region
surrounding the interface area where the dielectric surface area,
thickness, extent, breadth and/or depth will exceed that of the
associated conductor layer. Similarly, at the point of electrical
connection, or heat sinking area, the electrical conductor layer
may routinely vary dimensionally from that of the dielectric
layer.
[0077] In one embodiment, the electrical charge storage device has
at least 2% of the first conductive surface area being disposed at
a substantially uniform distance from the adjacent first dielectric
surface area. For the given area, the distance of each atom or
molecule for the conductive surface is at a substantially uniform
distance with the opposing atom or molecule of the dielectric
surface.
[0078] In one embodiment, the electrical charge storage device has
at least 2% of the first conductive surface area being disposed at
a selected distance ranging from 0.0001 .mu.m to 2000 .mu.m from
the first dielectric surface area. Additionally, in another
embodiment, it is preferred that the second conductive surface area
be disposed at a selected distance ranging from 0.0001 .mu.m to
2000 .mu.m from the second dielectric surface area. The selected
distance of the various embodiments from 0.0001 .mu.m to 2000 .mu.m
are selectable for the particular electrical charge storage device.
The selected distance may vary a particular selectable tolerance
for a given selected distance. For example, the selected distance
may vary a particular percentage for the distance.
[0079] In one embodiment, the electrical charge storage device may
have smooth, enhanced surface area for the conductive and/or
dielectric layers of the inventive device. Preferably, the surface
of an adjoining conductive layer and dielectric layer, have a
similar smooth surface area structure. In various embodiments of
the inventive device, the smooth enhance surface area structures
may be: i) alveolar in shape (like a biological lung), ii)
sinusoidal rows in shape, iii) embedded in a permeable vertical
fashion (like a sponge), iv) parabolic in shape, v) inverted or
everted (i.e. it could be convex or concave), vi) spiral in shape,
vii) random swirl in shape, vii) quasi random swirl in shape, viii)
can be mathematically defined (such as, sin(X)sin(Y),
(A)sin(bX)sin(bY), parabolic, conical, etc.), ix) tubular in shape,
x) annular in shape, xi) toroidal in shape.
[0080] In one embodiment of the electrical charge storage device,
the device reduces dielectric heating by the use of smooth
structures.
[0081] In another embodiment of the electrical charge storage
device, a conformal filter medium is constructed between one
substrate and the adjacent conformal layer of dielectric. The
conformal filter medium wets the adjacent substrate and dielectric
with an electrolytic fluid of known compositions. The conformal
filter medium will allow ion transport to cause a displacement
current to occur across the conformal dielectric layer. A second
conformal conductive substrate is then fabricated in intimate
contact with the structure to complete the electrolytic capacitor
cell. The at least two conductive substrates may be terminated for
electrical connected to other electrical circuit elements. Or in
the alternate, the process can continue, building an additional
capacitor layer.
[0082] In one embodiment of the electrical charge storage device,
materials used for the conductive layers and the dielectric layers
are adhesed to one another in the construction or fabrication
process.
[0083] In one embodiment of the electrical charge storage device,
variation in adhesion parameters are employed to alter device
structure.
[0084] In one embodiment of the electrical charge storage device,
at least one conductive layer is comprised of an alloy and/or a
metal, including, but not limited to aluminum, iron, copper,
silver, gold or a combination thereof.
[0085] In another embodiment of the electrical charge storage
device, the device is constructed with a substrate, including, but
not limited to the following: iron substrate, aluminum substrate,
ceramic substrate, silicon substrate, and carbon substrate, or a
combination thereof.
[0086] In one embodiment of the electrical charge storage device,
the dielectric layer is constructed with any of the following: a
crystalline substance, a polycrystalline substance, or an amorphous
substance.
[0087] In one embodiment of the present invention the device is
constructed with an aluminum oxide dielectric layer in a
crystalline form (for example sapphire), polycrystalline form,
layered form, amorphous form (similar to glass) or in hybrid
form.
[0088] In one embodiment of the present invention the molecular
orientation and structure of the conductive surface material is
selected to allow maximum electrical conduction.
[0089] In one embodiment of the present invention the molecular
orientation and structure of the dielectric surface material is
selected to provide minimum electrical conduction
[0090] In various embodiments of the electrical charge storage
device, the device is constructed with a dielectric layer comprised
of any of the following: silicon dioxide dielectric, a ceramic
dielectric, a titania ceramic dielectric, a titanic ceramic
dielectric, barium titanate dielectric, strontium titanate
dielectric, lead zirconium titanate dielectric, diamond dielectric,
or a diamond matrix dielectric, an organic dielectric, a polymer
dielectric, or an organic substance.
[0091] In one embodiment of the electrical charge storage device,
the device is formed as a capacitor.
[0092] In one embodiment of the electrical charge storage device,
the device is formed as a battery.
[0093] In one embodiment of the electrical charge storage device,
the device is formed as a fuel cell.
[0094] In one embodiment of the electrical charge storage device,
the device is formed as a discrete capacitor.
[0095] In one embodiment of the electrical charge storage device,
the device is formed as a chemical double-layer capacitor.
[0096] In one embodiment of the electrical charge storage device,
at least one conductive layer is composed of a semiconductor.
[0097] In one embodiment of the electrical charge storage device, a
multilayer dielectric is deposited in order to increase dielectric
constant and dielectric strength simultaneously.
[0098] In one embodiment of the electrical charge storage device, a
compound dielectric is deposited in order to increase dielectric
constant and dielectric strength simultaneously.
[0099] In one embodiment, the inventive device contains or further
comprises a filter structure.
[0100] In one embodiment, the electrical charge storage device
contains or further comprises an ion transport structure.
[0101] In one embodiment, the electrical charge storage device
contains or further comprises an electrolyte.
[0102] In one embodiment, the electrical charge storage device
supports ion transport.
[0103] In one embodiment, the electrical charge storage device
supports charge separation.
[0104] In one embodiment, the electrical charge storage device
supports electrical conduction.
[0105] In one embodiment, the electrical charge storage device
supports displacement current.
[0106] In one embodiment, a voltage is impressed across the
electrical charge storage device.
[0107] In one embodiment, an electric field is formed in the
electrical charge storage device.
[0108] In one embodiment, the volume density of the electrical
charge storage device is increased over that of a flat plate,
conventional capacitor.
[0109] In one embodiment, the rated voltage of the electrical
charge storage device is increased over that of a conventional
electrolytic capacitor.
[0110] In one embodiment, the electrical charge storage device
contains or further comprises a solid at (Twenty Five Degrees
Centigrade) 25.0 [.degree. C.] or a liquid at 25.0 [.degree.
C.].
[0111] In one embodiment, the electrical charge storage device
contains or further comprises a super cooled liquid at (Twenty Five
Degrees Centigrade) 25.0 [.degree. C.].
[0112] In one embodiment, the electrical charge storage device
contains or further comprises a gas at (Twenty Five Degrees
Centigrade) 25.0 [.degree. C.].
[0113] In one embodiment, the dielectric layer of the electrical
charge storage device charging process is aided by an electrolyte
such as alcohol, water or a polymer.
[0114] In one embodiment, dielectric layer charging is aided by an
electrolyte contains or further comprises any one of the following:
a base, a solvent, a salt, an acid, an oxidizing agent or reducing
agent.
[0115] In one embodiment, the dielectric layer is composed with
mica.
[0116] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by intimate contact with at
least one conductive layer.
[0117] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by intimate contact with at
least one heat sink.
[0118] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by operational connection
with at least one heat exchanger.
[0119] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by operational connection
with at least one cooling mechanism.
[0120] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by operational connection
with at least one cryogenic cooling mechanism.
[0121] In one embodiment of the electrical charge storage device,
the device electrical properties are altered by operational
connection with at least one cooling mechanism.
[0122] In one embodiment of the electrical charge storage device,
the device electrical properties are altered by operational
connection with at least one cooling or cryogenic cooling
mechanism.
[0123] In one embodiment of the electrical charge storage device,
the device dielectric electrical properties are altered by
operational connection with at least one cooling or cryogenic
cooling mechanism.
[0124] In one embodiment of the electrical charge storage device,
the first and/or second conductive layers electrical properties are
altered by operational connection with at least one cooling or
cryogenic cooling mechanism.
[0125] In one embodiment of the electrical charge storage device,
the device electrical properties are altered by one temperature
changing mechanism.
[0126] In one embodiment of the electrical charge storage device,
the device reduces electrolyte heat rise by intimate contact with
at least one heat sink.
[0127] In one embodiment of the electrical charge storage device,
the device reduces electrolyte heat rise by operational connection
with at least one heat exchanger.
[0128] In one embodiment of the electrical charge storage device,
the device reduces dielectric heat rise by operational connection
with at least one cooling mechanism.
[0129] In one embodiment of the electrical charge storage device,
the device reduces electrolyte heating by reducing ion transport
distance.
[0130] In one embodiment of the electrical charge storage device,
the device reduces electrolyte heating by improving ion transport
paths.
[0131] In one embodiment of the electrical charge storage device,
the electrical conductivity of at least one conductive layer is
altered by doping.
[0132] In one embodiment of the electrical charge storage device,
the electrical characteristics of the dielectric layer are altered
by doping.
[0133] In one embodiment of the electrical charge storage device,
at least one atom is adhesed to at least one atom or molecule.
[0134] In one embodiment of the electrical charge storage device,
at least one molecule is adhesed to at least one atom or
molecule.
[0135] In one embodiment of the electrical charge storage device,
at least one conductive atom or molecule is adhesed to at least one
dielectric atom or molecule.
[0136] In one embodiment of the electrical charge storage device,
at least one atom is adhesed to the at least one substrate.
[0137] In one embodiment of the electrical charge storage device,
the substrate is bonded to the dielectric layer.
[0138] In one embodiment of the electrical charge storage device,
at least one adhesive bonds at least one conductive layer to at
least one dielectric layer.
[0139] In one embodiment of the electrical charge storage device,
the device further comprises at least one conductive channel to
carry electrical current to an interface of the first conductive
layer and the first dielectric layer interface.
[0140] In one embodiment of the electrical charge storage device,
the device further comprises at least one conductive channel to
carry electrical current to an interface of the second conductive
and second dielectric layer.
[0141] In one embodiment of the electrical charge storage device,
the device further comprises at least one conductive channel to
transport at least one ion to a conductive layer/electrolyte
interface.
[0142] In one embodiment of the electrical charge storage device,
the device has at least one conductive layer insulated on its edge
to reduce fringing effects.
[0143] In one embodiment of the electrical charge storage device,
at least one conductive layer is insulated on its edge to prevent
arcing.
[0144] In one embodiment of the electrical charge storage device,
at least one conductive layer is bonded to at least one wire.
[0145] In one embodiment of the electrical charge storage device,
at least one conductive layer is insulated to prevent capacitor
shorting.
[0146] In one embodiment of the electrical charge storage device,
at least one pressure relieving vent is included.
[0147] In one embodiment of the electrical charge storage device, a
seal (gasket material or rubber, etc.) is included.
[0148] In one embodiment of the electrical charge storage device,
at least one tab is connected to at least one conductive layer. A
tab is a thin metal strip connecting a positive terminal of a
polarized electrical charge storage device such as an electrolytic
capacitor to an anode foil. Other tabs may connect a cathode foil
to the negative terminal.
[0149] Combination of Inventive Device with Other Devices
[0150] The inventive electrical charge storage device may be
utilized with various devices and other electronics. The
embodiments described herein, are not meant to limit the use of the
electrical charge storage device, but identify some of the germane
uses of the inventive capacitor.
[0151] In one embodiment of the electrical charge storage device,
at least one conductive layer is operably connected to at least one
wire.
[0152] In one embodiment of the electrical charge storage device,
at least one electrical charge storage device is operably connected
to at least one additional capacitor and/or at least one other
electrical charge storage device.
[0153] In one embodiment, the device is configured as a discrete
capacitor and is operably connected to at least one additional
inventive device which is configured as a discrete capacitor.
[0154] In one embodiment of the electrical charge storage device,
at least one conductive layer is operably connected to a DC
source.
[0155] In one embodiment of the electrical charge storage device,
at least one conductive layer is operably connected to an AC
source.
[0156] In one embodiment of the electrical charge storage device,
at least one conductive layer is operably connected to an DC source
and an AC source.
[0157] In one embodiment of the electrical charge storage device,
at least one conductive layer is operably connected to an DC bias
source and an AC source.
[0158] In one embodiment of the electrical charge storage device,
at least one pair of polarized capacitors are connected in an
anti-series configuration.
[0159] In one embodiment of the electrical charge storage device,
at least one conductive layer of the device is operably connected
to at least one heat sink.
[0160] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one electrical
component.
[0161] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one resistor.
[0162] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one semiconductor.
[0163] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one diode.
[0164] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one rectifier.
[0165] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one controlled
rectifier.
[0166] In one embodiment of the electrical charge storage device,
the device is operably connected to at least one inductor.
[0167] In one embodiment of the electrical charge storage device,
the device operating temperature is set and maintained by external
methods.
[0168] In one embodiment of the electrical charge storage device,
the device operating pressure is set and maintained by external
methods.
[0169] In one embodiment of the electrical charge storage device,
the device operating orientation is set and maintained by external
methods.
[0170] Construction Methods and Techniques for Inventive Device
[0171] The electrical charge storage device may be constructed in
various sizes, for example, as a nanoscale, microscale, molecular
scale, or as a macroscale device. The inventive device may be
constructed in such a way that the various components of the
inventive device are constructed or fabricated, atom by atom,
molecule by molecule, or a combination thereof. The conductive and
dielectric layers may be fabricated layer by layer, or atom by
atom. Preferably nanotechnology processes and techniques are
utilized to create the electrical charge storage device. However,
macroscopic techniques can be employed to achieve the enhanced
energy storage and power characteristics, enhanced surface area
moiety and the like. The nanotechniques and macroscopic techniques
should be considered illustrative and not limiting. The order or
sequence of the construction of the conductive and dielectric
layers may be accomplished in any order, including contemporaneous
construction of the layers.
[0172] The conductive and dielectric layers of the inventive device
may be fabricated layer by layer, or atom by atom in a macroscopic
manner to duplicate the results of the expanded surface area,
reduced charge separation distance and increased power
characteristics.
[0173] In one method of constructing the inventive device, the
conductive and dielectric layers are fabricated molecule by
molecule. In another method of constructing the inventive device,
the conductive and dielectric layers are fabricated atom by
atom.
[0174] In one method for manufacturing the electrical charge
storage device, the process includes the steps of constructing at
least one first conductive layer having a conductive curvilinear
surface; constructing at least one second conductive layer having a
conductive curvilinear surface; and constructing at least one
dielectric layer disposed between the first conductive curvilinear
surface and the second conductive curvilinear surface.
[0175] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first conductive curvilinear
surface; constructing a dielectric layer having opposing first and
second dielectric curvilinear surfaces, the first dielectric
curvilinear surface disposed proximate the first conductive
curvilinear surface and substantially following the first
conductive curvilinear surface across its area; and constructing a
second conductive layer having a second conductive curvilinear
surface, the second conductive curvilinear surface disposed
adjacent the second dielectric curvilinear surface and
substantially following the second conductive curvilinear surface
across its area.
[0176] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first conductive smooth, enhanced
surface; constructing a dielectric layer having opposing first and
second dielectric surfaces, the first dielectric smooth, enhanced
surface disposed proximate the first conductive smooth, enhanced
surface and substantially following the first conductive smooth,
enhanced surface; and constructing a second conductive layer having
a second conductive smooth, enhanced surface, the second conductive
smooth, enhanced surface disposed adjacent the second dielectric
surface and substantially following the second conductive smooth,
enhanced surface.
[0177] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first conductive surface;
constructing a dielectric layer having opposing first and second
dielectric surfaces, the first dielectric surface having a
substantially conformal surface with the first conductive surface;
and constructing a second conductive layer having a second
conductive surface disposed adjacent to the second dielectric
surface.
[0178] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first conductive surface;
constructing a dielectric layer having opposing first and second
dielectric surfaces, the first dielectric surface substantially
maintaining moiety with the first conductive surface; and
constructing a second conductive layer having a second conductive
surface disposed adjacent to the second dielectric surface.
[0179] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first conductive surface;
constructing a dielectric layer having opposing first and second
dielectric surfaces, the first dielectric surface having a
substantially conformal surface with the first conductive surface;
and constructing a second conductive layer having a second
conductive surface disposed adjacent to the second dielectric
surface.
[0180] In another method for manufacturing the electrical charge
storage device, the process includes the steps of constructing a
first conductive layer having a first surface; constructing a
dielectric layer having opposing first and second dielectric
surfaces, the first dielectric disposed proximate the first surface
and substantially following the first surface; constructing a
second conductive layer having a surface, the second conductive
surface disposed adjacent the second dielectric surface and
substantially following the second surface; and wherein at least a
portion of the first and/or second dielectric surfaces have sharpy
structures.
[0181] In one method of constructing or fabricating the electrical
charge storage device, a dielectric film is deposited.
[0182] In one method of constructing or fabricating the electrical
charge storage device, a porous media is deposited. Within the
fluid filled portion of an electrolytic type electrical charge
storage device. The porous media allows ion transport, like a paper
layer, and can be viewed similar to a sponge. It wets the layers
and allows current flow. Electrochemicals can be employed in these
porous media (like in a car battery, tantalum cap, electrolytic
cap, super capacitor, ultra capacitor, fuel cell and the like,
i.e., all the PECS devices).
[0183] In one method of constructing or fabricating the electrical
charge storage device, a permeable media is deposited. Within the
fluid filled portion of an electrolytic type electrical charge
storage device. The permeable media allows ion transport, like a
paper layer, and can be viewed similar to a sponge. It wets the
layers and allows current flow. Electrochemicals can be employed in
these permeable media (like in a car battery, tantalum cap,
electrolytic cap, super capacitor, ultra capacitor, fuel cell and
the like, i.e., all the PECS devices).
[0184] In one method of constructing the electrical charge storage
device, chemical parameters are controllably varied in time and
space in order to alter device physical structures.
[0185] In one method of constructing the electrical charge storage
device, a chemical vapor deposition (CVD) process is employed.
[0186] In one method of constructing the electrical charge storage
device, a plasma enhanced chemical vapor deposition (PECVD) process
is employed.
[0187] In one method of constructing the electrical charge storage
device, a cure/anneal process is conducted.
[0188] In one method of constructing the electrical charge storage
device, a source of reactive oxygen is employed.
[0189] In one method of constructing the electrical charge storage
device, nanomanipulation techniques, equipment and processes are
used to construct any one of leads, conductors, electrolytes,
wetting mechanisms or dielectrics.
[0190] In one method of constructing the electrical charge storage
device, microscale assembly techniques, equipment and processes are
used to construct any one of the leads, conductors, electrolytes,
wetting mechanisms or dielectrics.
[0191] In one method of constructing the electrical charge storage
device, lithography tools, equipment and processes are used to
construct any one of the leads, conductors, electrolytes, wetting
mechanisms or dielectrics.
[0192] In one method of constructing the electrical charge storage
device, etching tools, equipment and processes are used to
construct any one of the leads, conductors, electrolytes, wetting
mechanisms or dielectrics.
[0193] In embodiments of constructing the electrical charge storage
device, one or more of the following may be employed:
microelectromechanical devices, at least one microsensor, at least
one nanosensor, at least one arrayed probe, at least one arrayed
nanotube, at least one electromagnetic field, at least one
manipulable electromagnetic field, and/or at least one
nanoelectromechanical device.
[0194] In one method of constructing the electrical charge storage
device, surface coating is employed.
[0195] In one method of constructing the electrical charge storage
device, adhesion is employed.
[0196] In one method of constructing the electrical charge storage
device, controllable variation of adhesive parameters is employed
to alter device physical structures.
[0197] In one method of constructing the electrical charge storage
device, etching tools, equipment and processes are used to
construct leads, conductors and dielectrics.
[0198] The following equipment and processes may be employed in the
construction of the inventive device: i) large scale equipment and
processes, ii) small scale equipment and processes, iii) micro
scale equipment and processes, or iv) nano scale equipment and
processes.
[0199] In one embodiment of the electrical charge storage device,
the device further includes a wetting mechanism. In another
embodiment, at least one microfluidic channel network is included
in the wetting mechanism.
[0200] In one embodiment of the electrical charge storage device,
the device further includes a wetting mechanism composed of at
least one nanotube.
[0201] In one method of constructing the electrical charge storage
device, a photosensitive substrate is employed.
[0202] In one method of constructing the electrical charge storage
device, a photosensitive layer is deposited.
[0203] In one method of constructing the electrical charge storage
device, a photosensitive region is deposited.
[0204] In one method of constructing the electrical charge storage
device, a mask pattern is employed.
[0205] In one method of constructing the electrical charge storage
device, an electrode is operably connected to the first and/or
second conductive layer.
[0206] In one method of constructing the electrical charge storage
device, an electrode is operably connected to a conductive
substrate.
[0207] In one method of constructing the electrical charge storage
device, an electrode is operably connected to a semiconductor.
[0208] In one method of constructing the electrical charge storage
device, an electrode is operably connected to a dielectric.
[0209] In one method of constructing the electrical charge storage
device, a probe is employed.
[0210] In one method of constructing the electrical charge storage
device, a reagent is employed.
[0211] In one method of constructing the electrical charge storage
device, a wafer is constructed.
[0212] In one method of constructing the electrical charge storage
device, microfluidic analysis is conducted.
[0213] In one manner of constructing the electrical charge storage
device, materials are delivered to the device by a nanotube.
[0214] In one manner of constructing the electrical charge storage
device, materials are delivered to the device by a single layer
nanotube.
[0215] In one manner of constructing the electrical charge storage
device, materials are delivered to the device by a multi-layer
nanotube.
[0216] In one manner of constructing the electrical charge storage
device, a laser is employed.
[0217] In one manner of constructing the electrical charge storage
device, materials are fused to the device by a laser.
[0218] In one manner of constructing the electrical charge storage
device, any one or more of the following may be used: a microscope,
a heat source, or a heat sink.
[0219] In one manner of constructing the electrical charge storage
device, the materials are monitored via a nanotube.
[0220] In one manner of constructing the electrical charge storage
device, the materials are manipulated by a nanotube.
[0221] In one manner of constructing the electrical charge storage
device, the material temperatures are measured.
[0222] In one manner of constructing the electrical charge storage
device, the material chemical properties are measured.
[0223] In one manner of constructing the electrical charge storage
device, the material electrical properties are measured.
[0224] In one manner of constructing the electrical charge storage
device, the material physical properties are measured.
[0225] In one manner of constructing the electrical charge storage
device, the material quantum properties are measured.
[0226] In one manner of constructing the electrical charge storage
device, a corrosive process is employed.
[0227] In one manner of constructing the electrical charge storage
device, an etching process is employed.
[0228] In one manner of constructing the electrical charge storage
device, the conductive layers and dielectric layers are
incorporated within a printed circuit board.
[0229] In one manner of constructing the electrical charge storage
device, the conductive layers and dielectric layers are
incorporated within an integrated circuit.
[0230] In one manner of constructing the electrical charge storage
device, the conductive layers and dielectric layers are i) enclosed
in a package, or ii) encapsulated.
[0231] In one manner of constructing the electrical charge storage
device, the conductive layers and an electrolyte are enclosed in a
package.
[0232] In one manner of constructing the electrical charge storage
device, the device is enclosed in a metal package, in a plastic
package, in a silicon based package, in a carbon-based package, or
in a ceramic package.
[0233] In at least one construction method for the electrical
charge storage device, the process includes growing microscopic
structures such as: crystals, mats, filter mats, beds, webs and
particle clouds.
[0234] The inventive device may be built in any suitable form, such
as flat, cylindrical, spherical or other than flat form.
[0235] The inventive device may be constructed in one form such as
flat and subsequently rolled or processed into any other suitable
form, such as flat, cylindrical, spherical or other than flat
form.
[0236] Packaging of the Inventive Device
[0237] Once the inventive devices are constructed or fabricated,
the device may be rolled, especially if in flat form, for final
packaging purposes. The one or more inventive devices may stored or
housed in packaging containers. The packaging containers may be
cylindrical, annular section, rectangular parallelepiped, as well
as other container shapes. The containers may be water proof,
pressure rated, or vibration mounted (shock mounted).
[0238] Electrical Charge Storage Device with Smooth Cap with
Villiform Small Structures
[0239] In one implementation of the instant invention a smooth
overall structure with villiform microstructure is constructed. The
overall mechanical strength of the smooth overall structure is
maintained. In the realm of the small, sharp bristles are
introduced. These bristles constructed for strength and surface
area increase serve to distribute and accumulate great charge
concentrations. Consider a large smooth mountain. Each gentle slope
curves ever so slightly. There are ups and downs, valleys, crest,
plateaus and summit. Each spot on this mountain can be easily
traveled; north, east, west or south. One can ascend, descend or
traverse with almost equal effort. But wait, let us investigate
closer. The green carpet of grass catches our eye. Upon closer
observation the apparently smooth mountain structure is interrupted
at the smallest level. The stems and leaves of grass interrupt the
continuity and smoothness of our alpine meadow. The grass seeks
maximum solar exposure for energy uptake. The little sprigs of
grass have not reduced the strength of the mountain, yet the sprigs
have massively increased the mountainous surface area.
[0240] In one implementation of the instant invention a smooth
overall structure with villiform nanostructure is constructed.
Scarlet O'Hare in Gone with the Wind visits Rhett Butler in a
velvet dress, recycled from drapery. As above at the tiniest level,
noticed only by the love stricken pair the smooth lines of the
starlet's figure are abruptly disrupted by the pile of velvet. The
extreme villocity of the velvet does not reduce the allure of Miss
Leigh to Mr. Gable. In fact the soft velvet pile exudes a power all
its own. The tiny but visible bristles create a depth unmatched by
most other fabrics. In a similar manner, the villous nanostructure
provide a strong mechanical structure for charge accumulation,
fault conditions and voltage strength for the capacitors of the
present invention.
[0241] In one implementation of the electrical charge storage
device, the conductive and dielectric layers are constructed with a
smooth overall structure with villiform microstructure having
villiform nanostructure. High mechanical strength and effective
dielectric strength are maintained. A high surface area and thus
high charge concentration and accumulation is achieved by employing
a sharpy topology. The various forces, torques, stresses and
thermal activity, characterized by high voltage and high current
conditions are thus encountered without significant capacitor
degradation.
[0242] Electrical Charge Storage Device with Sharpy Structures
[0243] Another aspect of the electrical charge storage device is an
electrical storage device having sharpy structures. In one
embodiment, there is an electrical charge storage device having
sharpy structures on at least a portion of the conductive and/or
dielectric layers of the device.
[0244] In one embodiment, there is an electrical charge storage
device that has a first conductive layer having a first surface; a
dielectric layer having opposing first and second dielectric
surfaces, the first dielectric disposed proximate the first surface
and substantially following the first surface; a second conductive
layer having a surface, the second conductive surface disposed
adjacent the second dielectric surface and substantially following
the second surface; wherein at least a portion of the first and/or
second dielectric surfaces have sharpy structures.
[0245] In one embodiment of the electrical charge storage device,
the storage device includes a first conductive layer having a first
surface and a dielectric layer having opposing first and second
dielectric surfaces. The conductive layer first surface is disposed
proximate to the first surface of the dielectric layer and
substantially follows the dielectric surface. The device also
includes a second conductive layer having a surface, the second
conductive surface disposed adjacent to the second dielectric
surface and substantially following the second dielectric
surface.
[0246] One aspect of the device is at least a portion of the first
and/or second conductive surfaces have sharpy structures.
Additionally, at least a portion of the first or second dielectric
surfaces may also have sharpy structures. Without limitation, some
of these structures include dendrite structures, such as a
substantially tree and leaf structure, a substantially nerve-like
structure, a substantially a synapse-like structure, or a
substantially a blood vessel and capillary-like structure.
[0247] In one implementation of the electrical charge storage
device, the conductive and dielectric layers are constructed with a
smooth overall structure with dendrite, Fresnel, tree and leaf and
other high angular construction. Interwoven, insulated random
tangles of conductors (like a sack full of snakes or a colander
full of spaghetti). These various structures provide for increased
power characteristics.
[0248] In one implementation of the electrical charge storage
device, the surface area of the capacitor is expanded by the use of
sharpy structures.
[0249] In one implementation of the electrical charge storage
device, electrical charge storage density is increased by the use
of sharpy structures.
[0250] In one implementation of the electrical charge storage
device, the total charge density of the capacitor is increased by
the use of sharpy structures.
[0251] In one implementation of the electrical charge storage
device, the instantaneous current capability of the capacitor is
increased by the use of sharpy structures.
[0252] In one implementation of the electrical charge storage
device, the charge accumulation rate of the capacitor is enhanced
by the use of sharpy structures.
[0253] In one implementation of the electrical charge storage
device, repulsive forces are countered by the use of adhesion.
[0254] In one implementation of the electrical charge storage
device, entropy is countered by the use of adhesion.
[0255] In one implementation of the inventive capacitor materials
are maintained in place by the use of adhesion.
[0256] In one implementation of the inventive capacitor materials
are brought together by the use of adhesion.
[0257] In one aspect of the invention the moiety between the
dielectric layers and the conductive layer promote cooling of the
inventive capacitor.
[0258] It should be noted that although a summary of most of the
embodiments of the present invention are described above, other
embodiments are set forth in the claims. Those embodiments included
by reference in the summary of the invention.
[0259] The foregoing has outlined rather broadly the features and
technical advantages of the present invention in order that the
detailed description of the invention that follows may be better
understood. Additional features and advantages of the invention
will be described hereinafter which form the subject of the claims
of the invention. It should be appreciated by those skilled in the
art that the conception and specific embodiment disclosed may be
readily utilized as a basis for modifying or designing other
structures for carrying out the same purposes of the present
invention. It should also be realized by those skilled in the art
that such equivalent constructions do not depart from the spirit
and scope of the invention as set forth in the appended claims. The
novel features which are believed to be characteristic of the
invention, both as to its organization and method of operation,
together with further objects and advantages will be better
understood from the following description when considered in
connection with the accompanying figures. It is to be expressly
understood, however, that each of the figures is provided for the
purpose of illustration and description only and is not intended as
a definition of the limits of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0260] For a more complete understanding of the present invention,
reference is now made to the following descriptions taken in
conjunction with the accompanying drawing, in which:
[0261] FIG. 1 shows an instantaneous charge accumulation on the
conductor plates of a generalized capacitor having a planar surface
for the conductive layers;
[0262] FIG. 2 represents a magnified cross-sectional view of an
exemplary embodiment of a prior art polarized electrolytic
capacitor having conductor foils;
[0263] FIG. 3 illustrates a smooth two dimensional figure;
[0264] FIG. 4 illustrates a smooth three dimensional structure;
[0265] FIG. 5 illustrates moiety showing that the top and bottom
structures are conformal;
[0266] FIG. 6 illustrates the relative relationship between the
electrical energy storage characteristics and the power transfer
aspects of the technology;
[0267] FIG. 7 illustrates a construction method whereby the count
of conductive layers is reduced in a parallel capacitor
assembly;
[0268] FIG. 8 illustrates a construction method whereby the count
of conductive layers and interconnections is reduced in a series
capacitor assembly;
[0269] FIG. 9A-9B illustrates a construction method whereby the
count of conductive layers and interconnections is reduced in an
anti-series capacitor assembly;
[0270] FIG. 10 illustrates a arbitrary scale capacitor design with
increased surface area;
[0271] FIG. 11 illustrates a nanostructure with high
angularity;
[0272] FIG. 12 illustrates an expanded surface area having a
sinusoidal topology; and
[0273] FIG. 13 illustrates an expanded surface area region where
the peaks and valleys are rectangular parallelelopiped in nature,
exhibiting a unit saw tooth or pyramidal topology.
DETAILED DESCRIPTION OF THE INVENTION
[0274] Capacitors are generally described mathematically by those
knowledgeable in the field. There are several systems of units and
conversions which are commonly employed. It is not uncommon to jump
back and forth among systems. The basic physical and mathematical
definitions and relationships are as follows, using the passive
sign circuit convention, where applicable: TABLE-US-00001 Q =
8.9874 .times. 10.sup.9 Nm.sup.2C.sub.ou.sup.2 (Unit of Charge, the
Coulomb) E0 = 8.854 .times. 10.sup.12 C.sub.ou.sup.2/NM.sup.2
(Permittivity of Free Space) C = Q/V v = (1/C) .SIGMA.idt +
vt.sub.0 (Summation or Integral from t.sub.0 until t.sub.f) i = C
dv/dt p = vi = Cv dv/dt w = Cv.sup.2/2 C = E.sub.0 E.sub.R (A/d)
(Parallel Plate Capacitor Geometry)
[0275] Capacitors are characterized by certain qualitative circuit
actions and reactions. This circuit behavior is summarized by the
following heuristics: i) capacitors will permit an instantaneous
change in terminal current, ii) capacitors will oppose an
instantaneous change in terminal voltage, and iii) charged
capacitors appear as an open circuit to constant (DC) voltages.
[0276] FIG. 3 illustrates a smooth two dimensional figure. The
surface of the one or more conductive layers may be formed with a
smooth surface. Additionally, the dielectric layer may be formed in
with a similar smooth surface. One mathematical model for a two
dimensional, smooth figure is the sine wave. The smooth valleys 31
and peaks 33 can be physically extended into several smooth, three
dimensional surfaces as further described below and show in FIG. 4.
For example, the drawing can be considered a side view of a smooth,
three dimensional, channel or hill and valley structure.
[0277] FIG. 4 illustrates a smooth three dimensional structure that
may be utilized for the present invention. This structure can be
considered a valley 31 and peaks 33 structure or a sine wave or
similar undulation linearly extended in a planar surface. So long
as the gradient variation is gradual the structure can be
considered smooth. Gradual changes in slope of the surface may be
made.
[0278] FIG. 5 illustrates the concept of moiety between layers. The
top and bottom structures are conformal. FIG. 5 is shown emphasized
with a distance separation between the top 41 and bottom 43 halves.
As illustrated in the figure, the surfaces maintaining moiety with
between the first surface 45 and the second surface 47. In certain
embodiments of the present invention, the conductive layer
maintains moiety with dielectric layer.
[0279] FIG. 6 illustrates one of the many objects of the electrical
charge storage device, one object to enhance power characteristics
of electrical charge storage devices. FIG. 6 is meant to be
illustrative and not limiting. FIG. 6 shows the relative
relationship between the electrical energy storage characteristics
and the power transfer aspects of the inventive electrical charge
storage device. The figure illustrates Energy 61 on the y-axis and
Power 62 on the x-axis. The box entitled "area of interest" shows
generally where one implementation of the inventive technology lies
in comparison to other presently available technology. The "area of
interest" box 67 is believed to show the region of the energy to
power graph where the inventive electrical charge storage device
resides in comparison to other existing technology. As shown
significant variation exists among each technology. For example
lead calcium batteries 63 may be of the deep cycle type, having
high energy storage design. An identical Amp Hour starting battery
on the other hand will not store the total quantity of energy, but
can provide significantly greater instantaneous power. Similarly
there are various symmetrical and asymmetrical super and ultra
capacitor designs 64 which have widely divergent energy density and
power density profiles. Further, tantalum capacitors 65 have
various power and energy characteristics. A non-polarized capacitor
66 may have good power characteristics, but low energy storage. The
electrical charge storage device exhibits increases in power and
energy over the existing technology.
[0280] FIG. 7 illustrates a construction method whereby the count
of conductive layers is reduced in a parallel capacitor assembly.
Reducing conductor count is an object of this invention.
[0281] FIG. 8 illustrates a construction method whereby the count
of conductive layers and interconnections is reduced in a series
capacitor assembly.
[0282] FIGS. 9A and 9B illustrate a construction method whereby the
count of conductive layers and interconnections is reduced in an
anti-series capacitor assembly. This technique can be employed in
the use of forwardly biased, polarized capacitors in continuous AC
applications.
[0283] FIG. 10 illustrates an arbitrary scale capacitor design with
increased surface area. This type gross structure serves to
increase volume charge storage. FIG. 10 exhibits some high
angularities and can be considered a sharpy structure.
[0284] FIG. 11 illustrates a structure with high angularity. In
certain embodiments the inventive electrical charge storage device
utilizes a dendrite structure which tends to maximize the charge
accumulation and energy storage. Dendrite structures include tree
and leaf, nerve and synapse, blood vessel and capillary. Such
sharpy structures are suitable for high energy density
capacitors.
[0285] FIG. 12 illustrates an expanded surface area where
Z=ASin(bX)Sin(bY), a sinusoidal topology. In certain embodiments,
the conductive and dielectric layers utilize curvilinear surfaces.
For the case of a continuous simple mathematical surface such as
Z=A[Sin(bX)Sin(bY)] the integral can be derived exactly. The
surface area increase of the above surface is a function of the
Amplitude A and the Period of bX and bY. In this figure, the period
of bX and bY are identical. An object having a smooth curvilinear
surface such as this, in which a conformal dielectric and second
conformal conductive layer, can be shown to have great physical
strength relative to the brittle structures present in electrolytic
capacitors. The line integral (length) of a unit sinusoid over the
period has a length of 2.pi.. Thus the surface integral for the
sinusoidal unit structure is 4.pi..sup.2. The more general case of
Z as shown above includes the constants A and b. The surface area
would increase in direct proportion with the magnitude of the
constant A, and increase in inverse proportion to the constant b
due to the mathematical properties of surface integrals. This
surface area increase is physically analogous to the increase in
energy with increases in wave magnitude and decreases in wavelength
(increasing frequency). The Z=ASin(bX)Sin(bY) a sinusoidal topology
is smooth and can exhibit significant physical strength due to the
conductors. A strongly bonded, physically strong, conformal
dielectric will fill the separating space, providing significant
mechanical support. A dielectric with good heat transfer
characteristics and heat durability, such as the crystalline form
of carbon (diamond) will allow a large displacement current. The
conformal layer topology provides for the shortest distance for
charge displacement within the dielectric to be an orthogonal path
from conductor to conductor at each point of the curvilinear
surfaces. Thus material strength, topology, and thermodynamic
properties combine with dielectric constant and dielectric strength
to determine the allowable transient and steady state current
densities for a capacitor. Where structure dimensions are large
relative to the atoms and molecules involved, a close approximation
to uniform, conformal coating can be maintained.
[0286] FIG. 13 illustrates an expanded surface area region where
the peaks and valleys are rectangular parallelelopiped in nature,
exhibiting a unit saw tooth or pyramidal topology. In certain
embodiments of the electrical charge storage device, conductive and
dielectric surfaces have expanded surface regions. The line
integral of a saw tooth 2D curve is 4, while the surface area of
the 3D surface is six (6). Thus the 3D saw tooth topology exhibits
six times the surface area of a flat surface but significantly less
surface area than the sinusoidal topology. This shape can be
described as tilted square box halves, slightly displaced. The
topology structure of FIG. 13 exhibits significant physical
strength combined with an increase in surface area. As in the case
of the sinusoidal topology above, the pyramidal structure will
increase in surface area with increasing amplitude and frequency.
Also, the displacement current vector generally retains the
orthogonal and shortest route characteristic of the sinusoidal
structure above. The relatively straight realizable surfaces and
edges are consistent with crystalline and polycrystalline growth
structures.
[0287] All patents and publications mentioned in the specification
are indicative of the level of those skilled in the art to which
the invention pertains. All patents and publications are herein
incorporated by reference to the same extent as if each individual
publication was specifically and individually indicated to be
incorporated by reference.
UNITED STATES PATENT DOCUMENTS
[0288] U.S. Pat. No. 5,362,526, entitled "Plasma-Enhanced CVD
Process Using TEOS for Depositing Silicon Oxide", which is
incorporated by reference herein. [0289] U.S. Pat. No. 5,876,787,
entitled "process of manufacturing a porous carbon material and
capacitor having the same", Avarbz et al, 1999 [0290] U.S. Pat. No.
5,081,559, entitled "enclosed ferroelectric stacked capacitor",
Fazan et al, 1992
PUBLISHED UNITED STATES PATENT APPLICATIONS
[0291] TABLE-US-00002 US PTO 20020017893 W. B. Duff, Jr. Published
Feb. 14, 2002
[0292] Method and Circuit for Using Polarized Device in AC
Applications TABLE-US-00003 US PTO 20030006738 W. B. Duff, Jr.
Published Jan. 09, 2003
Method and Circuit for Using Polarized Device in AC
Applications
[0293] Non-provisional U.S. application Ser. No. 09/170,998,
entitled "Method and Circuit for Using Polarized Device in AC
Applications," filed Nov. 9, 2000, which claims the benefit of
provisional Application Ser. No. 60/174,433, entitled "Method and
Circuit for Using Polarized Device in AC Applications," filed: Jan.
4, 2000. TABLE-US-00004 USPTO 20030010910 Colbert, Published Jan.
09, 2003 Daniel T., et al
Continuous Fiber of Single Wall Carbon Nanotubes
OTHER REFERENCES
[0294] Solid State Electronic Devices, 3.sup.rd Edition, Ben G.
Streetman, Prentice-Hall, Englewood Cliffs, N.J., 1990. [0295]
Economic AC Capacitors, W. B. Duff, Jr., IEEE Power Engineering
Review, Volume 22, Number 1, January 2002, The Institute of
Electrical and Electronics Engineers, NYNY
[0296] Although the present invention and its advantages have been
described in detail, it should be understood that various changes,
substitutions and alterations can be made herein without departing
from the spirit and scope of the invention as defined by the
appended claims. Moreover, the scope of the present application is
not intended to be limited to the particular embodiments of the
process, machine, manufacture, composition of matter, means,
methods and steps described in the specification. As one of
ordinary skill in the art will readily appreciate from the
disclosure of the present invention, processes, machines,
manufacture, compositions of matter, means, methods, or steps,
presently existing or later to be developed that perform
substantially the same function or achieve substantially the same
result as the corresponding embodiments described herein may be
utilized according to the present invention. Accordingly, the
appended claims are intended to include within their scope such
processes, machines, manufacture, compositions of matter, means,
methods, or steps.
* * * * *