U.S. patent application number 10/729577 was filed with the patent office on 2007-11-29 for image sensor and method.
This patent application is currently assigned to Honda Giken Kogyo Kabushiki Kaisha. Invention is credited to Sukeyuki Shinotsuka.
Application Number | 20070273780 10/729577 |
Document ID | / |
Family ID | 26618478 |
Filed Date | 2007-11-29 |
United States Patent
Application |
20070273780 |
Kind Code |
A9 |
Shinotsuka; Sukeyuki |
November 29, 2007 |
Image sensor and method
Abstract
An image sensor comprising a matrix of solid-state light sensor
elements each representing a unit pixel, which is capable of
reading out sensor signals from respective pixels in a time series
by sequentially selecting pixels on a line-by-line basis and
sequentially selecting pixels in a selected line, wherein each
pixel line is divided into a plurality of blocks with each block
composed of the same specified number of pixels and a first
scanning means sequentially reads pixel sensor signals on the
block-by-block basis starting from the first block and a second
scanning means reads pixel sensor signals of the readout block. The
image sensor thus constructed can achieve high speed scanning of
respective pixels with a minimal increase in power consumption.
Inventors: |
Shinotsuka; Sukeyuki;
(Sayama-shi, JP) |
Correspondence
Address: |
FULBRIGHT AND JAWORSKI LLP
555 S. FLOWER STREET, 41ST FLOOR
LOS ANGELES
CA
90071
US
|
Assignee: |
Honda Giken Kogyo Kabushiki
Kaisha
|
Prior
Publication: |
|
Document Identifier |
Publication Date |
|
US 20040169755 A1 |
September 2, 2004 |
|
|
Family ID: |
26618478 |
Appl. No.: |
10/729577 |
Filed: |
December 3, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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PCT/JP02/03481 |
Apr 8, 2002 |
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10729577 |
Dec 3, 2003 |
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Current U.S.
Class: |
348/308 ;
250/208.1; 257/E27.133; 348/304; 348/307; 348/310; 348/E3.029 |
Current CPC
Class: |
H04N 3/1512 20130101;
H04N 5/376 20130101; H01L 27/14643 20130101; H04N 5/35518 20130101;
H04N 5/3745 20130101 |
Class at
Publication: |
348/308 ;
348/307; 348/310; 250/208.1; 348/304 |
International
Class: |
H04N 3/14 20060101
H04N003/14; H04N 5/335 20060101 H04N005/335 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 6, 2001 |
JP |
2001-209983 |
Jun 6, 2001 |
JP |
2001-209985 |
Claims
1. An image sensor comprising a matrix of solid-state light sensor
elements, each of which represents a unit pixel and is capable of
reading out in a time series sensor signals of respective pixels by
sequentially selecting pixel lines one by one and sequentially
selecting sensor signals one by one in a selected pixel line,
characterized in that each of the pixel lines is evenly divided
into a plurality of blocks with each block composed of a specified
number of pixels, a first scanning means is provided for
sequentially reading out pixel sensor signals on a block-by-block
basis starting from a first block, a second scanning means is
provided for sequentially reading out pixel sensor signals on a
pixel-by-pixel basis from a selected block and a bias circuit is
provided for converting a pixel sensor signal scanned by the first
scanning means into a voltage value by using a reference resistance
with a bias voltage applied thereto.
2. An image sensor as defined in claim 2, characterized in that the
first scanning means comprises a pixel selecting circuit for
providing signals for sequentially selecting pixels on the
line-by-line basis and a switch circuit for outputting sensor
signals according to the pixel selecting signals from the pixel
selecting circuit, and the second scanning means comprises a pixel
selecting circuit for providing a signal for sequentially selecting
pixels on the block-by-block basis and a switch circuit for
outputting sensor signals according to the pixel selecting signals
from the pixel selecting circuit.
3. An image sensor as defined in claim 2, characterized in that the
pixel selecting circuits of the first scanning means and the second
scanning means are composed each of a shift register circuit or a
decoder circuit.
4. An image sensor as defined in claim 2, characterized in that the
duration of a pixel selecting signal provided by the first scanning
means corresponds to a time necessary for selecting pixels of one
block.
5. An image sensor as defined in claim 1, characterized in that the
solid-state light sensor element is a light sensor circuit which is
capable of producing in a photoelectric converting element a sensor
current proportional to the quantity of light falling thereon,
converting the sensor current into a voltage signal by a transistor
with a logarithmic output characteristic in a weak inverse state,
and outputting a sensor signal corresponding to the voltage
signal.
6. An image sensor as defined in claim 5, characterized in that the
light sensor circuit is initialized before detecting light by
removing an electric charge remaining in a parasitic capacitor of
the photoelectric converting element by changing a drain voltage of
a MOS type transistor having a logarithmic output characteristic in
a weak inverse state lower than a normal working value.
7. An image sensor comprising a matrix of solid-state light sensor
elements, each of which represents a unit pixel and is capable of
reading out in a time series sensor signals of respective pixels by
sequentially selecting pixel lines one by one and sequentially
selecting sensor signals one by one in a selected pixel line,
characterized in that each of the pixel lines is evenly divided
into a plurality of blocks with each block composed of a specified
number of pixels and a first scanning means is provided for
sequentially reading out pixel sensor signals on a block-by-block
basis starting from a first block, a buffer means is provided for
temporally storing pixel sensor signals of a readout block and a
second scanning means is provided for sequentially reading out the
pixel sensor signals temporally stored in the buffer means.
8. An image sensor as defined in claim 7, characterized in that the
first scanning means comprises a pixel selecting circuit for
providing signals for sequentially selecting pixels on the
line-by-line basis and a switch circuit for outputting pixel sensor
signals according to the pixel selecting signals from the pixel
selecting circuit, and the second scanning means comprises a pixel
selecting circuit for providing a signal for sequentially selecting
pixels on the block-by-block basis and a switch circuit for
outputting sensor signals according to the pixel selecting signals
from the pixel selecting circuit.
9. An image sensor as defined in claim 7, characterized in that the
first scanning means is provided with a bias circuit for converting
each sensor signal read from a corresponding pixel to a voltage
value by using a reference resistance with a bias voltage applied
thereto.
10. An image sensor as defined in claim 8, characterized in that
the pixel selecting circuits of the first scanning means and the
second scanning means are composed each of a shift register circuit
or a decoder circuit.
11. An image sensor as defined in claim 8, characterized in that
the duration of a pixel selecting signal provided by the first
scanning means corresponds to a time necessary for selecting all
pixels of one block.
12. An image sensor as defined in claim 7, characterized in that
the solid-state light sensor element is a light sensor circuit
which is capable of producing in a photoelectric converting element
a sensor current proportional to the quantity of light falling
thereon, converting the sensor current into a voltage signal by a
transistor with a logarithmic output characteristic in a weak
inverse state, and outputting a sensor signal corresponding to the
voltage signal.
13. An image sensor as defined in claim 12, characterized in that
the light sensor circuit is initialized before detecting light by
removing an electric charge remaining in a parasitic capacitor of
the photoelectric converting element by changing a drain voltage of
a MOS type transistor having a logarithmic output characteristic in
a weak inverse state lower than a normal working value.
14. A method of scanning the pixels of an image sensor comprised of
a matrix of solid-state light sensor elements, each of which
represents a unit pixel and is capable of reading out in a time
series sensor signals of respective pixels by sequentially
selecting pixel lines one by one and sequentially selecting sensor
signals one by one in a selected pixel line, comprising the steps
of dividing each of the pixel lines into a plurality of blocks with
each block composed of a specified number of pixels, first scanning
the pixels for sequentially reading out pixel sensor signals on a
block-by-block basis starting from a first block, then scanning the
pixels for sequentially reading out pixel sensor signals on a
pixel-by-pixel basis from a selected block, and converting a pixel
sensor signal scanned in the first scanning step into a voltage
value by using a reference resistance with a bias voltage applied
thereto.
15. A method as defined in claim 14, characterized in that the
duration of a pixel selecting signal provided by the first scanning
step corresponds to a time necessary for selecting pixels of one
block.
16. A method as defined in claim 14, characterized in that the
solid-state light sensor element is a light sensor circuit which is
capable of producing in a photoelectric converting element a sensor
current proportional to the quantity of light falling thereon,
converting the sensor current into a voltage signal by a transistor
with a logarithmic output characteristic in a weak inverse state,
and outputting a sensor signal corresponding to the voltage
signal.
17. A method as defined in claim 16, characterized in that the
light sensor circuit is initialized before detecting light by
removing an electric charge remaining in a parasitic capacitor of
the photoelectric converting element by changing a drain voltage of
a MOS type transistor having a logarithmic output characteristic in
a weak inverse state lower than a normal working value.
18. A method of scanning the pixels of an image sensor comprised of
a matrix of solid-state light sensor elements, each of which
represents a unit pixel and is capable of reading out in a time
series sensor signals of respective pixels by sequentially
selecting pixel lines one by one and sequentially selecting sensor
signals one by one in a selected pixel line, comprising the steps
of dividing each of the pixel lines into a plurality of blocks with
each block composed of a specified number of pixels, first scanning
the pixels for sequentially reading out pixel sensor signals on a
block-by-block basis starting from a first block, temporally
storing the pixel sensor signals of a readout block, and then
scanning the pixels for sequentially reading out the temporally
stored pixel sensor signals.
19. A method as defined in claim 18, characterized in that the
first scanning step includes converting each sensor signal read
from a corresponding pixel to a voltage value by using a reference
resistance with a bias voltage applied thereto.
20. A method as defined in claim 18, characterized in that the
duration of a pixel selecting signal provided by the first scanning
step corresponds to a time necessary for selecting all pixels of
one block.
21. A method as defined in claim 18, characterized in that the
solid-state light sensor element is a light sensor circuit which is
capable of producing in a photoelectric converting element a sensor
current proportional to the quantity of light falling thereon,
converting the sensor current into a voltage signal by a transistor
with a logarithmic output characteristic in a weak inverse state,
and outputting a sensor signal corresponding to the voltage
signal.
22. A method as defined in claim 21, characterized in that the
light sensor circuit is initialized before detecting light by
removing an electric charge remaining in a parasitic capacitor of
the photoelectric converting element by changing a drain voltage of
a MOS type transistor having a logarithmic output characteristic in
a weak inverse state lower than a normal working value.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to an image sensor comprised
of a number of solid-state light sensor elements arranged to form a
matrix of the light sensor elements each representing a unit pixel,
wherein sensor signals from respective pixels are read out
(scanned) in a time series by sequentially selecting the pixel
lines one at a time and sequentially selecting each of the pixels
in a selected line.
[0002] Japanese Laid-Open Patent Publication No. 2000--329616
discloses a conventional image sensor, in which a light sensor
circuit representing a unit pixel comprises, as shown in FIG. 1, a
photo-diode PD operating as a photoelectric converting element for
producing therein a sensor current proportional to the quantity of
incident light Ls falling thereon, a transistor Q1 having a
logarithmic output characteristic in a weak inverse state for
converting the sensor current produced in the photodiode PD into a
voltage signal Vpd by using the property of its sub-threshold
region, a transistor Q2 for amplifying the voltage signal Vpd and a
transistor Q3 for outputting a sensor signal So in accordance with
a timing pulse of a readout signal Vs and which is characterized by
its wide dynamic range obtained by giving the output a logarithmic
characteristic, thereby achieving the high sensitivity of detecting
a light signal. This image sensor can change drain voltages of the
transistors for all pixels from a normal to a lower level for a
specified time to remove charges accumulated in parasitic
capacitors C of respective photoelectric converting elements,
thereby initializing all pixels before detecting light signals.
Therefore, even if the sensor current rapidly decreased with a
decreased illumination, each sensor circuit may immediately obtain
a voltage signal corresponding to the incident light quantity at
that moment, thereby eliminating the possibility of occurrence of
afterglow of the pixel at a decreased quantity of incident
light.
[0003] FIG. 2 shows a time chart of signals produced at respective
portions of the light sensor circuit of FIG. 1. In FIG. 2, t1 is an
initializing timing pulse, t2 is a timing pulse for outputting a
light sensor signal So and T designates a period for accumulating a
charge in a parasitic capacitor C of the photodiode PD.
[0004] FIG. 3 shows an output characteristic of a sensor signal So
with a sensor current proportional to a quantity of light falling
on the light sensor circuit of FIG. 1, which is characterized by a
logarithmic output characteristic at a sufficient quantity of the
sensor current flowing in the photodiode PD and by a
non-logarithmic linear characteristic at a small quantity of the
sensor current due to a response delay in charging a parasitic
capacitor C. In FIG. 3, WA indicates a non-logarithmic response
characteristic region and WB indicates a logarithmic response
characteristic region.
[0005] FIG. 4 shows an exemplary construction of a conventional
image sensor comprising a number of the above-described light
sensor circuits arranged to form a matrix of pixels (i.e., light
sensor circuits), wherein sensor signals from respective pixels are
read by scanning in a time series.
[0006] The image sensor is composed of 4.times.4 pixels D11-D44
arranged in a matrix of pixel circuits, in which, under control of
an electronic control unit ECU (not shown), pixel lines are
selected one by one with respective selecting signals LS1-LS4
sequentially output from a pixel line selecting circuit 1 and
pixels in each selected pixel-line are readout one by one as
respective sensor signals So in such a manner that selecting
signals DS sequentially output from a pixel selecting circuit 2
turn ON corresponding switches SW1-SW4 to read sensor signals So in
a time series. Each of the sensor signals So sequentially readout
from respective pixels is converted into a specified voltage signal
Vo by applying a bias voltage Vcc through a reference resistance R.
In FIG. 4, numeral 4 designates a power source for gate voltage VG
of the transistor Q1, numeral 6 designates a power source for a
drain voltage VD of the transistor Q1 and numeral 5 designates a
voltage switching-over circuit 5 by which a drain voltage VD of
each transistor Q1 for each pixel is changed to a normal high-level
H or an initializing lower level L by the effect of a specified
timing pulse.
[0007] FIG. 5 is a time chart of signals generated at respective
portions of the thus constructed image sensor. However, the
above-described conventional image sensor has a low signal driving
ability to convert a sensor signal So from each pixel into an
output voltage signal Vo and output it. In other words, if the
image sensor reads out a sensor signal at an increased scanning
speed, the voltage signal Vo would be output as unsaturated. For
this reason, it cannot achieve high speed reading-out (scanning) of
pixel signals.
[0008] To improve the signal driving ability of the conventional
image sensor, it is modified by providing each pixel output of one
pixel line with a bias circuit 11 which, as shown in FIG. 6,
converts each sensor signal So read from each of respective pixels
in a pixel line into a voltage signal Vo by applying a bias voltage
Vcc through a reference resistance. This modification makes it
possible to read out pixel signals at an increased scanning speed
but, at the same time, increases power consumption for supplying
electric current to a number of reference resistances R provided
for each of the pixel outputs of each pixel line. High speed
scanning is still difficult since the capacities of a plurality of
analog switches (transistor switches) must be driven until a
voltage signal Vo of the pixel selected by the pixel selecting
circuit 2 is output.
[0009] Accordingly, an attempt has been made to improve signal
driving ability of the image sensor by further providing a buffer
circuit 12 which comprises, as shown in FIG. 15, buffer amplifiers
BF connected to each one of the signal lines on the output side of
the bias circuit 11 and which can temporally and intensively store
voltage signals Vo from respective pixels selected by the pixel
selecting circuit 2. The image sensor thus constructed, however,
has such a disadvantage that the power consumption is further
increased for supplying electric current to a number of buffer
amplifiers with one provided for each of the pixel outputs of one
pixel line.
[0010] Thus, the conventional image sensor comprising a number of
solid-state light sensitive elements arranged to form a matrix of
pixels, which is capable of reading sensor signals from respective
pixels in a time series by sequentially selecting pixel lines one
at a time and sequentially selecting pixels one by one in a
selected pixel line and then outputting each sensor signal as a
voltage signal obtained by applying a bias voltage through the
reference resistance and which, however, cannot achieve high speed
reading of pixel signals because of its low signal driving
ability.
[0011] The image sensor, which is further provided with bias
circuits disposed for each of outputs of each pixel line for
converting a voltage signal from each pixel by applying a bias
voltage through a reference resistance so as to improve the signal
driving ability necessary for achieving high-speed reading of pixel
signals, has to supply electric energy to a number of reference
resistances R provided one for each of the pixel outputs of one
pixel line, resulting in a considerable increase in power
consumption.
[0012] The image sensor comprising a matrix of solid-state light
sensor elements each representing a unit pixel, which sequentially
reads signals from respective pixels in a time series by
sequentially selecting pixel lines one at a time and by
sequentially selecting pixels in a selected pixel line and which is
provided with a bias circuit for each of the pixel outputs of one
pixel line to convert respective pixel signals to respective
voltage signals by applying a bias voltage through a reference
resistance and which is further provided with a buffer circuit
comprising buffer amplifiers connected to each one of the signal
output lines to temporally accumulate voltage signals of respective
pixels from the bias circuits and selectively output the voltage
signals so as to improve the signal driving ability and achieve
high-speed scanning of respective sensor signals, has a
disadvantage of further increasing power consumption by supplying
electric current to a number of reference resistances and a number
of buffer amplifiers disposed one for each of the pixel outputs of
one pixel line.
SUMMARY OF THE INVENTION
[0013] An object of the present invention is to provide an image
sensor comprising a matrix of a number of solid-state light sensor
elements each representing a unit pixel and arranged to form a
matrix of pixels, which is capable of reading out sensor signals in
a time series by sequentially selecting pixel lines one by one and
sequentially reading pixels from a selected line and which is
featured by evenly dividing each line of pixels into a plurality of
blocks, each block comprising the same specified number of pixels,
and by using a first scanning means for sequentially reading out
sensor signals on a block-by-block basis in an order starting from
the first block, a second scanning means for sequentially reading
out sensor signals on the pixel-by-pixel basis from the block
readout by the first scanning means and a bias circuit for
converting each of the sensor signals of the pixel block readout by
the first scanning means into a voltage value by using a reference
resistance with a bias voltage applied thereto. The image sensor
thus constructed can realize reading out sensor signals of
respective pixels in a time series at an increased speed with a
minimum increase in power consumption.
[0014] Another object of the present invention is to provide an
image sensor comprising a matrix of a number of solid-state light
sensor elements each representing a unit pixel and arranged to form
a matrix of pixels, which is capable of reading out sensor signals
in a time series by sequentially selecting pixel lines one at a
time and sequentially reading out pixels in a selected line and
which is featured by evenly dividing each pixel line into a
plurality of blocks, each block comprising the same specified
number of pixels, and by using a first scanning means for
sequentially reading out sensor signals on a block-by-block basis
in an order starting from the first block, a buffer means for
temporally storing sensor signals in each of the readout blocks and
a second scanning means for sequentially reading out pixel signals
stored in the buffer means. The image sensor thus constructed can
realize reading out sensor signals of respective pixels in a time
series at an increased speed with a minimum increase in power
consumption.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is an electric circuit diagram of a light sensor
circuit for one pixel, which is used as a unit component of an
image sensor.
[0016] FIG. 2 is a time chart of signals to be generated in the
light sensor circuit of FIG. 1.
[0017] FIG. 3 shows an output characteristic of a sensor signal vs.
a sensor current in the light sensor circuit of FIG. 1.
[0018] FIG. 4 is a block circuit diagram of a conventional image
sensor using light sensor circuits each representing a unit
pixel.
[0019] FIG. 5 is a time chart of signals generated at respective
portions of the conventional image sensor of FIG. 4.
[0020] FIG. 6 is a block circuit diagram of another conventional
image sensor using light sensor circuits each representing a unit
pixel.
[0021] FIG. 7 is a block circuit diagram of an image sensor
according to an embodiment of the present invention.
[0022] FIG. 8 is a time chart of signals generated at respective
portions of the image sensor of FIG. 7 for showing an example of
its operation.
[0023] FIG. 9 is an exemplary circuit diagram of a shift register
used for a pixel selecting circuit of the image sensor of FIG.
7.
[0024] FIG. 10 is an exemplary circuit diagram of a decoder circuit
used for a pixel selecting circuit of the image sensor of FIG.
7.
[0025] FIG. 11 is a time chart of signals generated at respective
portions of the image sensor of FIG. 7 for showing another example
of its operation.
[0026] FIG. 12 is another exemplary circuit diagram of a decoder
circuit used for a pixel selecting circuit of the image sensor of
FIG. 7.
[0027] FIG. 13 is an image sensor according to another embodiment
of the present invention.
[0028] FIG. 14 is a time chart of signals generated at respective
portions of the image sensor of FIG. 13 for showing an example of
its operation.
[0029] FIG. 15 is a block circuit diagram of still another
conventional image sensor.
[0030] FIG. 16 is an image sensor according to a further embodiment
of the present invention.
[0031] FIG. 17 is an image sensor according to a still further
embodiment of the present invention.
PREFERRED EMBODIMENTS OF THE PRESENT INVENTION
[0032] FIG. 7 illustrates an image sensor according to an
embodiment of the present invention.
[0033] The image sensor is basically similar in construction to the
conventional image sensor shown in FIG. 4, which comprises a matrix
of light sensor circuits each representing a unit pixel and which
is capable of reading out sensor signals in a time series by
driving a pixel line selecting circuit 1 and a pixel selecting
circuit 2 via switch circuits 3. In this embodiment, an array of
pixels composing one pixel line consists of 16 pixels. Namely, the
first line consists of 16 pixels D11 to D116 and the second line
consists of 16 pixels D211 to D216. In this embodiment, one line of
pixels are equally divided into 8 blocks each composed of two
pixels, for example, combinations of D11 with D12, D13 with D14, .
. . , D115 with D116. A common signal line "a" for the first (odd
numbered) pixels (i.e., D11, D13, . . . , D115) in respective
blocks and a common signal line "b" for the second (even numbered)
pixels (i.e., D12, D14 , . . . , D116 ) in respective blocks are
lead out as common sensor signal output lines. Common signal lines
"a" and "b" are provided with a pixel selecting circuit 7 for
sending signals for sequentially selecting sensor signals B1 and B2
of one block, a switch circuit 8 for sequentially turning ON analog
switches T1 and T2 according to the selecting signals to output
sensor signals B1 and B2 respectively and a bias circuit 9 for
converting respective sensor signals from respective blocks into
respective voltage values by a reference resistance R with a bias
voltage Vcc applied thereto.
[0034] As the reference resistance R, a resistance load or a
transistor load may be used. The bias circuit 9 may be omitted if
sensor signals from respective pixels can be output as voltage
signals.
[0035] FIG. 8 shows a time chart of signals produced at various
portions of the image sensor of FIG. 7 while it operates.
[0036] A line of pixels D11.about.D116 is selected by a pixel line
selecting signal LS1 and then analog switches SW1.about.SW16 are
turned ON sequentially according to pixel selecting signals
DS1.about.DS16, thereby sensor signals B1 from odd-numbered pixels
(D11, D13, . . . , D115) are read out through a signal line "a" and
sensor signals B2 from even-numbered pixels (D12, D14, . . . ,
D116) are read out through a signal line "b". The sensor signals B1
and B2 through the signal lines "a" and "b" are converted into
respective voltage signals by a bias circuit 9 and then the sensor
voltage signals Vo from respective pixels D11.about.D116 are output
in a time series by alternately switching ON and OFF analog
switches T1 and T2 according to pixel selecting signals from the
pixel selecting circuit 7.
[0037] FIG. 9 shows an exemplary configuration of a pixel selecting
circuit 2 which uses a shift register. In this circuit, outputs
DS1.about.DS16 of the register can sequentially turn ON analog
switches SW1.about.SW16 only for the period of selecting respective
pixels as shown in FIG. 8. The pixel selecting circuit 7 uses a
shift register similar to that used for the pixel selecting circuit
2.
[0038] FIG. 10 shows an exemplary configuration of a pixel
selecting circuit 2 which uses a decoder circuit. In this
configuration, the decoder circuit generates outputs DS1.about.DS16
in response to input signals AO-A3 each of 4 bits, by which the
analog switches SW1.about.SW16 can be sequentially turned ON only
for a period of selecting respective pixels as shown in FIG. 8. A
similar decoder circuit can be used for the pixel selecting circuit
7.
[0039] FIG. 11 is a time chart of signals generated at respective
portions of an image sensor of FIG. 7 during its operation.
[0040] In this case, a selecting signal (DS1.about.DS16) from a
pixel selecting circuit 2 is maintained for a duration of selecting
two pixels composing one block, thereby keeping each of the analog
switches SW1.about.SW16 as in the ON state for that duration.
Namely, the duration for turning on each of the analog switches
SW1.about.SW16 is twice that in the operation of FIG. 8. This means
that a sensor signal from each of respective pixels is stabilized
for a period twice that in the operation of FIG. 8. If a
stabilizing time for a sensor signal is the same, the scanning
period in this case can be two times longer as compared with the
case of FIG. 8.
[0041] FIG. 12 shows a decoder circuit used for the pixel selecting
circuit 2. In this case, selecting signals DS1 and DS2, DS2 and
DS3, . . . , DS15 and DS16 can be selected according to input 4-bit
signals AO.about.A3 respectively.
[0042] If a shift register is used for the pixel selecting circuit
2 in this instance, the operation of switches SW1.about.SW16 as
shown in FIG. 11 can be performed by adding "11" to respective
"DATA" inputs.
[0043] FIG. 13 shows an image sensor according to another
embodiment of the present invention. In this embodiment, one line
of pixels is divided into 4 equivalent blocks each comprised of 4
pixels. These blocks have four (4) common signal lines "a", "b",
"c" and "d", i. e., the signal line "a" is common to first pixels
of the respective blocks, the signal line "b" is common to the
second pixels of the respective blocks, the signal line "c" is
common to the third pixels of the respective blocks and the signal
line "d" is common to the fourth pixels of the respective blocks. A
pixel selecting circuit 7' is provided for providing signals for
sequentially selecting sensor signals B1, B2, B3 and B4 for one
block and a switch circuit 8' is provided for outputting sensor
signal B1, B2, B3 and B4 by sequentially turning ON analog switches
T1, T2, T3 and T4 respectively. A bias voltage circuit 9' is also
provided for converting respective sensor signals of one pixel
block into respective voltage values by a reference resistance with
a bias voltage Vcc applied thereto.
[0044] FIG. 14 is a time chart of generating signals at respective
portions of an image sensor of FIG. 13, which shows an example of
the operation of the image sensor.
[0045] Once a pixel line composed of pixels D11.about.D16 was
selected by a pixel line selecting signal LS1, pixel selecting
signals DS1.about.DS16 are sequentially generated to sequentially
turn ON analog switches SW1.about.SW16. Sensor signals B1 from the
first pixels (D11, D15, D19, D113) in respective blocks are
sequentially read out through a signal line "a", sensor signals B2
from the second pixels (D12, D16, D110, D114) in respective blocks
are sequentially read out through the signal line "b", sensor
signals B3 from the third pixels (D13, D17, D111, D115) in
respective blocks are sequentially read out through the signal line
"c" and the sensor signals B4 from the fourth pixels (D14, D18,
D112, D116) are sequentially read out through the signal line "d".
The bias circuit 9' sequentially converts the sensor signals B1-B4
read out through respective signal lines "a"-"d" into respective
voltage signals. The pixel selecting circuit 7 generates pixel
selecting signals to sequentially turn ON and OFF analog switches
T1-T4. Consequently, sensor signals Vo from the pixels D11 to D116
are output in a time series.
[0046] In this case, the pixel selecting circuit 2 maintains pixel
selecting signals (DS1.about.DS16) each for a duration
corresponding to a time for selecting four pixels of each block and
analog switches SW1.about.SW16 are held in ON state for the same
duration. Namely, in this instance, the analog switches are held in
the ON-state for the duration 4 times longer than that in the
operation of the image sensor as shown in FIG. 8. This means that
it can take a 4-times longer time to stabilize each sensor signal
read from each pixel. In other words, the scanning time for reading
sensor signals from respective pixels can be 4 times longer than
that in case of FIG. 8 if the stabilizing time is the same in both
cases.
[0047] In case it takes 500 nS to saturate a sensor signal from
each pixel, a bias circuit 9' provided for 4 signal lines "a"-"d"
can reduce the time necessary for scanning one pixel to 31.25 nS
(=500/4).
[0048] FIG. 16 shows an image sensor according to another
embodiment of the present invention. In this embodiment, each of
signal lines "a" and "b" is provided with a special buffer circuit
10 with a buffer amplifier BF connected thereto so as to temporally
store therein voltage signals Vo read from respective pixels. The
voltage signals are then sequentially output from the buffer
circuit 10 by switching ON analog switches T1 and T2 respectively
from the pixel selecting circuit 7.
[0049] The image sensor according to the shown embodiment can
possess an increased signal driving ability enough to read out
sensor signals at an increased scanning speed. The additional power
consumption of the image sensor is also restricted to the minimum
by providing a bias circuit 9 and a buffer circuit 10 only for
signal lines "a" and "b" led from respective pixel blocks composing
one pixel line.
[0050] The operation of the image sensor of FIG. 16 is basically
similar to that described above by the time chart of FIG. 8 or
11.
[0051] FIG. 17 shows an image sensor according to another
embodiment of the present invention.
[0052] In this embodiment, respective signal lines "a"-"d" are
provided with a pixel selecting circuit 7' for generating signals
for selecting sensor signals B1, B2, B3 and B4 in each pixel block,
a switch circuit 8' for sequentially turning ON analog switches T1,
T2, T3 and T4 to output sensor signals B1, B2, B3 and B4 according
to the pixel selecting signals, a bias circuit 9' for converting
respective sensor signals read from the block into respective
voltage values Vo by a reference resistance with a bias voltage Vcc
applied thereto and a buffer circuit 10' for temporally store
respective sensor signals having specified voltage values.
[0053] The operation of the image sensor of FIG. 17 is basically
similar to that described above with reference to the time chart of
FIG. 14.
[0054] The image sensor according to the present invention can use
as a unit pixel, besides a light sensor circuit shown in FIG. 1,
any of solid-state light sensor elements, for example, a CCD or MOS
transistor type sensor element.
Industrial Applicability
[0055] An image sensor according to an embodiment of the present
invention comprises a matrix of solid-state image sensor elements
each representing a unit pixel and is capable of reading out in a
time series sensor signals from respective pixels by sequentially
selecting pixel lines one by one and sequentially selecting pixels
from a selected pixel line, wherein each pixel line is evenly
divided into a plurality of blocks each composed of the same
specified number of pixels, a first scanning means sequentially
reads sensor signals on a block-by-block basis in the order
starting from the first block, a second scanning means sequentially
reads out pixel sensor signals from a block readout by the first
scanning means and a bias circuit converts a sensor signal readout
by the first canning means into a voltage value by using a
reference resistance with a bias voltage applied thereto. The image
sensor thus constructed can achieve a high speed scanning of
respective pixels with a minimal increase in its power
consumption.
[0056] An image sensor according to another embodiment of the
present invention comprises a matrix of solid-state image sensor
elements each representing a unit pixel and is capable of reading
out in a time series sensor signals from respective pixels by
sequentially selecting pixel lines one by one and sequentially
selecting pixels from a selected pixel line, wherein each pixel
line is evenly divided into a plurality of blocks each comprised of
the same specified number of pixels, a first scanning means
sequentially reads sensor signals on a block-by-block basis in the
order starting from the first block, a buffer means temporally
stores sensor signals of the pixel block readout by the first
scanning means and a second scanning means sequentially reads out
the sensor signals stored in the buffer means. The image sensor
thus constructed can achieve a high speed scanning of respective
pixels with a minimal increase in its power consumption.
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