U.S. patent application number 11/767235 was filed with the patent office on 2007-10-18 for field imager.
This patent application is currently assigned to CETECH SOLUTIONS INC.. Invention is credited to Wael Badawy, Yehya Ghallab.
Application Number | 20070241748 11/767235 |
Document ID | / |
Family ID | 35656252 |
Filed Date | 2007-10-18 |
United States Patent
Application |
20070241748 |
Kind Code |
A1 |
Ghallab; Yehya ; et
al. |
October 18, 2007 |
Field imager
Abstract
A detection apparatus for detecting the presence of a sample,
the detection apparatus comprising a chamber, ports for introducing
a sample within the chamber, an actuation unit for establishing a
controllable electromagnetic field in the chamber; and a sensing
unit for sensing changes in the electromagnetic field due to the
presence of the sample within the chamber. The sensing unit
comprises a sensor device comprising a source and a drain embedded
in a FET a gate for the FET, in which the gate is formed of a
material whose conductivity is related to the electromagnetic field
established in a nonconductive medium in contact with the gate.
Inventors: |
Ghallab; Yehya; (Calgary,
CA) ; Badawy; Wael; (Calgary, CA) |
Correspondence
Address: |
Lambert Intellectual Property Law
Suite 200, 10328 - 81 Avenue
Edmonton
AB
T6E 1X2
CA
|
Assignee: |
CETECH SOLUTIONS INC.
150 Edgeview Road NW
Calgary
CA
T3A 4V1
|
Family ID: |
35656252 |
Appl. No.: |
11/767235 |
Filed: |
June 22, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10896867 |
Jul 23, 2004 |
|
|
|
11767235 |
Jun 22, 2007 |
|
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|
Current U.S.
Class: |
324/260 ;
257/252; 257/E27.148 |
Current CPC
Class: |
G01D 5/145 20130101;
H01L 27/14679 20130101 |
Class at
Publication: |
324/260 ;
257/252 |
International
Class: |
H01L 29/82 20060101
H01L029/82; G01R 33/00 20060101 G01R033/00 |
Claims
1. A sensor device, comprising: a source and a drain embedded in a
FET; a gate for the FET, in which the gate is formed of a material
whose conductivity is sensitive to an electric or magnetic field
established in a nonconductive medium in contact with the gate.
2. The sensor device of claim 1 wherein the electric or magnetic
field is a time varying electromagnetic field.
3. The sensor device of claim 1 further comprising an additional
gate and an additional drain forming an additional FET, with the
source acting as a source for the additional gate and additional
drain.
4. The sensor device of claim 3 in which the FET is a p-type FET
and the additional FET is an n-type FET.
5. The sensor device of claim 1 connected in an array of sensor
devices.
6. The sensor device of claim 1 connected to a detection apparatus,
the detection apparatus comprising: a chamber; a port for
introducing a sample into the chamber; and an actuation unit for
establishing a controllable electromagnetic field in the chamber;
whereby the sensor device in operation senses changes in the
electromagnetic field due to the presence of the sample within the
electromagnetic field.
7. The sensor device of claim 4 connected to a detection apparatus,
the detection apparatus comprising: a chamber; a port for
introducing a sample into the chamber; and an actuation unit for
establishing a controllable electromagnetic field in the chamber;
whereby the sensor device in operation senses changes in the
electromagnetic field due to the presence of the sample within the
electromagnetic field.
8. The sensor device of claim 7, wherein the changes in the
electromagnetic field sensed by the sensor device are used to
determine the impedance of the sample.
9. The sensor device of claim 7 wherein a characterization unit
uses the changes sensed by the sensor unit to make a 2D image of
the electromagnetic field.
10. The sensor device of claim 7 wherein the actuation unit is
responsive to feedback from the sensor device.
11-40. (canceled)
Description
BACKGROUND OF THE INVENTION
[0001] The behavior of matter in electrical or magnetic field,
especially nonuniform fields, is of interest to scientists of
various branches: Physics, chemistry, engineering, or life
sciences. To chemists and physicists, it's a science of many and
varied phenomena. To engineers, it's a source of new and useful
techniques for separating, levitating, and rotating materials or
improving material behavior.
[0002] In recent decades, Dielectrophoresis has become a fairly
well known phenomenon in which a spatially nonuniform electric
field exerts a net force on the field-induced dipole of a particle.
Particles with higher polarizability than the surrounding medium
experience positive dielectrophoresis and they move toward regions
of highest electric field concentration. Particles less polarizable
than the surrounding medium experience negative dielectrophoresis,
and move towards regions of low electric field concentration. The
force depends on the induced dipole and the electric field
gradient, not on the particle's charge. Thus, dielectrophoresis has
been used to precipitate DNA and proteins, to manipulate viruses
(100 nm diameter), and to manipulate and separate cells and
subcellular components such as microtubules.
[0003] Dielectrophoretic levitation fulfills a somewhat specialized
need among the scientific and technical applications for
dielectrophoresis. Two types of levitation, passive and
feedback-controlled may be used to levitate particles exhibiting,
respectively, negative and positive DEP behavior.
[0004] DEP is technologically important in its own right, as
evidenced by the number of applications in such scientific and
technical fields as biophysics, bioengineering, and mineral
separation. As an example, which is important in cancer treatment,
is cell fusion, as discussed by P. T. Gaynor, and P. S. Bodger in
"Electrofusion processes: theoretical evaluation of high electric
field effects on cellular transmembrane potentials", IEE
Proceedings-Science, Measurement and Technology, vol. 142, no. 2,
pp. 176-182, 1995. In this process, the nonuniform electric field
collects some fraction of these cells on electrode surfaces where
cells of the two types inevitably encounter each other and form
chains. A serious of short DC pulse is then applied to the
electrodes. The strong DC field disturbs the membranes in the
region of contact between cells and initiates their merge or
fusion. A potential application of this technique is the production
of antibodies useful in cancer research and treatment.
[0005] Lab-on-a-chip based on DEP phenomenon has become one of the
hottest areas of research recently. It has many applications in the
biological, pharmaceutical, medical, and environmental fields.
These applications are characterized by complex experimental
protocols, which need both microorganism detection and
manipulation. Hence, lab-on-a-chip technology needs to integrate
functions such as: actuation, sensing, and processing to increase
their effectiveness. On the other hand, lab-on-a-chip technology
holds the promise of cheaper, better and faster biological
analysis. However, to date there is still an unmet need for
lab-on-a-chip technology to effectively deal with the biological
systems at the cell level.
[0006] Recently, two different lab-on-a-chip approaches have been
proposed by G. Medoro, N. Manaresi, M. Tartagni, and R. Guerrieri,
in "CMOS-only Sensors and Manipulation for microorganisms", Proc.
IEDM, pp. 415-418, 2000 and by N. Manaresi, A. Romani, G. Medoro,
L. Altomare, A. Leonardi, M. Tartagni, and R. Guerrieri in "A CMOC
Chip for Individual Manipulation and Detection", IEEE International
Solid-State Circuits Conference, ISSCC 03, pp. 486-488. 2003. The
first, which was proposed in 2002, is the first lab-on-a-chip
approach for electronic manipulation and detection of
microorganisms. The proposed approach combines dielectrophoresis
with impedance measurements to trap and move particles while
monitoring their location and quantity in the device. The prototype
has been realized using standard printed circuit board (PCB)
technology. The sensing part in this approach can be performed by
any electrode by switching from the electrical stimulus to a
transimpedance amplifier, while all the other electrodes are
connected to ground. The second lab-on-a-chip, which was proposed
in 2003, is a microsystem for cell manipulation and detection based
on standard 0.35 .mu.m CMOS technology. This lab-on-a-chip
microsystem comprises two main units: the actuation unit, and the
sensing unit. The chip surface implements a 2D array of microsites,
each comprising superficial electrodes and embedded photodiode
sensors and logic. The actuation part is based on the DEP
technique. The sensing part depends on the fact that particles in
the sample can be detected by the changes in optical radiation
impinging on the photodiode associated with each micro-site. During
the sensing, the actuation voltages are halted, to avoid coupling
with the pixel readout. However, due to inertia, the cells keep
their position in the liquid.
[0007] The disadvantage of these lab-on-a-chip microsystems, can be
summarized as follows: [0008] Based on these two systems, we can
detect the position of the levitated cells. However, we cannot
sense the actual intensity of the nonuniform electric field that
produces the DEP force. [0009] The measurements here are indirect.
In other words, there is no "real-time" detection of the cell
response under the effect of the nonuniform electric field, as the
actuation part is halted while the sensing part is activated.
[0010] The sensing part in these two microsystems depends on the
inertia of the levitated cells. In other words, this sensing
approach depends on an external factor, which is the inertia of the
levitated cells. Thus, only cells with higher inertia can be sensed
and detected by using these two Microsystems.
[0011] What is needed is a lab-on-a-chip that can be used for
direct measurements, where the variations in the electric field can
be sensed and the cell can be characterized while the actuation
part is still active.
SUMMARY OF THE INVENTION
[0012] There is therefore provided, according to an aspect of the
invention, a sensor device, comprising a source and a drain
embedded in a FET; and a gate for the FET, in which the gate is
formed of a material whose conductivity is sensitive to an
electric, magnetic or electromagnetic field established in a
nonconductive medium in contact with the gate. The field may be
non-uniform. The FET may comprise two spatially separated gates and
two spatially separated drains, with a common source. Two sensor
devices may be connected, where wherein the FET of the first sensor
device is a p-type FET and the FET of the second sensor device is a
n-type FET. The sensor device may be connected in an array of
sensor devices.
[0013] According to a further aspect of the invention, there is
provided a detection apparatus, the detection apparatus comprising
a chamber; a port or ports for introducing a sample into the
chamber; an actuation unit for establishing a controllable
electromagnetic field in the chamber; and a FET sensing unit for
sensing changes in the electromagnetic field due to the presence of
the sample within the chamber. The FET sensing unit may be
comprised of sensor devices described above. The changes in the
electromagnetic field sensed by the sensing unit may be used to
determine the impedance of the sample, or a characterization unit
may use the changes sensed by the sensor unit to make a 2D image of
the electromagnetic field. The actuation unit may be responsive to
feedback from the sensor device. The actuation unit may comprise an
array of electrodes, for example in a quadrupole arrangement, and
the sensing unit may comprise an array of sensors interspersed with
the array of electrodes. At least one of the electrodes and sensors
may receive power from an electromagnetic source, wherein the
electromagnetic energy is directed by mirrors controlled by the
actuation unit, or from a power source controlled by the actuation
unit. The electrodes may be elongate members, the elongate members
receiving power at one end and generating the electromagnetic field
at the other end in response to the power.
[0014] According to a further aspect of the invention, there is
provided a method of detecting a sample using dielectrophoresis,
using the sensor device and detection apparatus described, where
the electromagnetic field is generated and the changes in the
electromagnetic field are sensed simultaneously. The particle may
be organic matter or a cell.
[0015] Other aspects of the invention will be found in the detailed
description and claims that follow.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] There will now be given a detailed description of preferred
embodiments of the invention, with reference to the drawings, by
way of illustration only and not limiting the scope of the
invention, in which like numerals refer to like elements, and in
which:
[0017] FIG. 1a is a block diagram of an apparatus constructed in
accordance with the teachings of the present invention;
[0018] FIG. 1b is a schematic view of actuation and sensing units
used in an embodiment of the invention;
[0019] FIG. 2 shows light-based electrodes used in the actuation
unit;
[0020] FIG. 3 shows light beam controlled driving circuits for the
electrodes in the actuation unit;
[0021] FIG. 3a shows light beam controlled driving circuits for an
array of electrodes in the actuation unit;
[0022] FIG. 4 shows various shapes of the tip of the electrode;
[0023] FIG. 5 is a perspective view of the physical structure of an
eFET;
[0024] FIG. 6 is the circuit equivalent of an eFET;
[0025] FIG. 7 is the circuit symbol for an eFET;
[0026] FIG. 8 is the circuit symbol of a DeFET;
[0027] FIG. 9 is the circuit equivalent of a DeFET;
[0028] FIG. 10 is the Current-Mode Instrumentation Amplifier (CMIA)
circuit used as a readout circuit;
[0029] FIG. 11a is a perspective view of a representation of the
quadrupole and DeFET;
[0030] FIG. 11b is a point charge representation of the quadrupole
arrangement;
[0031] FIG. 11c shows a large quadrupole configuration of
electrodes;
[0032] FIG. 11d is a schematic of a single large quadrupole
electrode using metal2 stips;
[0033] FIG. 11e shows a centric configuration for light beam
controlled driving poles with the sensor;
[0034] FIG. 12 is a graph displaying simulation results using
Coulomb Software;
[0035] FIG. 13 is a schematic representation of a DeFET according
to the invention;
[0036] FIG. 14 is a graph showing simulation results using Cadence
Simulator;
[0037] FIG. 15 is a graph showing the frequency response of the
CMIA used in the simulation;
[0038] FIG. 16 is a graph showing the different common mode
rejection ratio (CMRR) for different CMIA circuits; and
[0039] FIG. 17 is a schematic of a DeFET acting as an impedance
sensor.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0040] The electric field imager disclosed herein is based on
conventional TSMC 0.18 .mu.m CMOS technology. Some simulation and
experimental results are presented at the end of the disclosure.
Referring now to FIG. 1a, the proposed microsystem 10 comprises (a)
an actuation unit 12, which is in a quadruple electrode
configuration as shown in FIG. 1b to produce the required DEP force
to levitate the sample, for example, a cell, that we want to
characterize; (b) a sensing unit 14, which is a Differential
Electric Field Sensitive Field Effect Transistor (DeFET), where, to
obtain an image of the electric field, and characterize the
levitated cell, the DeFET is used in an array form, and the read
out circuit [i.e. the electric field-to-voltage converter (E-to-V
converter) circuit] is on a chip; (c) a characterization unit 16 to
analyze the images and determine characteristics of the sample; (d)
a chamber 18 to hold the sample with ports for inserting the
sample; and (e) a controller 20 for controlling the actuation unit
12. The controller 20 may be programmed to create a specific
non-uniform field, and may operate based upon feedback from the
sensing unit 14 or the characterization unit 16. Each component may
be located in any convenient location, such as under, inside or
outside the chamber. Also, while the actuation unit 12 and sensing
unit 14 are shown as separate bodies, it will be understood that
they may occupy the same space as shown in FIG. 1b. The chamber 18
has ports 22 for introducing a sample. As described, the apparatus
10 is capable of simultaneously actuating, sensing, and
manipulating the sample in the chamber 18, and can be used to
process samples such as cells, particles, liquids, powder, organic
matter, bio-live or dead species, or other types of samples. In
this document, processing a sample includes, but is not limited to,
actuating, sensing, testing, levitating, separating, manipulating,
isolating, trapping, analyzing, or identifying the sample as a
whole or a part thereof, performed individually, or in combination.
It will also be understood that when an electric field is referred
to, the discussion may equally apply to magnetic fields, or
electromagnetic field, since a time varying electric field will
have a magnetic field component. Each of the components presented
above will now be discussed in more detail.
The Actuation Unit
[0041] The actuation unit 12 comprises poles 24, or electrodes,
that generate the electric field in the chamber 18. The poles 24
are spatially distributed as shown in FIG. 1b and produce the
required force to process a sample (not shown). Sensors 28 are also
spatially distributed. Each pole 24 and sensor 28 is connected to a
corresponding terminal 25 to allow them to be individually
addressed. Referring to FIG. 11a, the sample 26 is shown in the
center of four poles 24 with sensors 28 below. Referring again to
FIG. 1b, each pole 24 can be individually addressed and actuated
using electrical signals, a light beam such as a laser, or other
sources of energy, such as a magnetic source connected to terminals
25 to produce the desired field and therefore operate on the sample
26. In the case of the laser, the light beam will use a set of
mirrors and lenses to focus the beam on the ele2ctrode to be
actuated. FIG. 2 shows the light-based electrodes 24 and FIG. 3
shows the driving circuits 34 where the light beam 36 controls a
switch 38 that adjusts the voltage at the top of the pole 24, which
in turn affects the electric field and corresponding DEP force that
is generated between the pole 24 and the grounded plate 78 on the
other side. Mirror 80 and lenses 82 are shown directing the beam
36. The arrangement used may be a much more complex system, where
the position of mirrors 80 and lenses 82 are controlled to address
individual poles 24. The cross-section of the tip of pole 24, where
the force is generated, can be hexagonal, square, rectangular, or
other shapes, with examples shown in FIG. 4. Each pole 24 may be
programmed to adjust its value based on the readout of the sensing
unit 14 to create a feedback loop that can verify the exact value
of the generated force.
[0042] FIG. 3a shows the spatial distributed poles to generate an
arbitrary electric field by controlling the values of the volt at
the individual electrodes. The poles 52, 54, 56, and 58 are similar
to the configuration in FIG. 3 but with different height to enable
single addressable poles. The pole 52 that is closer to the light
source is shorter than the far poles (54 and 56) in the other raw.
The poles in the same row 56 have the same height to simplify the
addressing mechanism. A light or energy source 30 is used to
control the volt at the pole. The energy will be modulated using a
modulator 35. A micro-mirror array 40 is used to direct the energy
to a switch 38 in FIG. 3. Each micro-mirror is separately
controlled or programmable to reflect the light or the energy to a
specific pole. The energy beams 45 reflected from the mirror and
falling on the switch at each pole will control the voltage (driven
from the voltage source 38) at the electrode tip. The actuation
pole can be various shapes and concentric as shown in FIG. 11e.
Each electrode should have a metallic tip.
[0043] Referring now to FIG. 11b, the actuation poles 24 in the
quadrupole configuration shown in FIG. 11a are approximated by a
system of four point charges 39 (.+-.Q) located in the x-y plane
and arranged symmetrically about the z-axis. Due to symmetry, the
radial component of the force is zero (i.e. F.sub.p=0), and the
z-component of the DEP force is defined by the following equation:
F z a 5 .apprxeq. - 3 .times. Q 2 .pi. .times. .times. 1 .times. Re
.function. [ K 2 ] .times. ( z / b ) b 7 .function. ( 1 + ( z / b )
2 ) 6 = - 3 .times. Q 2 .pi. .times. .times. 1 .times. Re
.function. [ K 2 ] .times. G QUAD .function. ( z ) ##EQU1## where
G.sub.QUAD(Z) collects the geometric dependencies and K 2 = 10
.times. ( p * - m * ) 2 .times. p * + 3 .times. m * ##EQU2## where
.epsilon.*.sub.p is the complex permittivity of the cell with
radius .alpha. immersed in a media with complex permittivity
.epsilon.*.sub.m. From the first equation, we can observe that the
force F.sub.z is proportional to .alpha..sup.5 (radius).sup.5, so
we can levitate the small particles using this configuration. On
the other hand, the quadrupole levitator comprises an azimuthally
symmetric electrode arrangement capable of sustaining passive
stable particle levitation. Also, as a diagnostic tool, quadrupole
levitation offers researchers insight into the detailed electrical
composition of materials. For these reasons, we selected the
quadrupole electrode configuration as an actuation part in our
design. It will be apparent to those skilled in the art that other
designs may also be used.
[0044] To implement a large (100 .mu.m) quadrupole system in the
0.18 CMOS technology, we are using four identical octagons using
metal2 layer. These octagons are in the x-y plane and arranged
symmetrically about the z-axis (see FIG. 11a), with a distance 100
.mu.m between each other, as shown in FIG. 11c. FIG. 11d shows a
schematic diagram of a single electrode. The dimension of the
electrode is 100 .mu.m.times.100 .mu.m from edge to edge. This
dimension violates the direct rule check (DRC) of the standard
0.181 .mu.m technology, for which the maximum metal area should be
<35 .mu.m.times.35 .mu.m. Thus, we used a grid or mesh
arrangement of metal2 that leaves a 1 .mu.m space between each
metal2 rectangle, as shown in FIG. 11d. Individual strips 27 of
metal2 overlap each other and are spaced with gaps between them to
form a mesh electrode. FIG. 11e shows a concentric continuous pole
50 with embedded sensors 60. The poles have different heights. The
inner pole has light sensitive switch 42, the outside pole has
switch 48 and the in-between two poles have the switches 44 and 46.
The poles are connected to a voltage source 38. The shape in FIG.
11e is octagonal because it is easier to fabricate in 0.18 .mu.m
standard TSMC technology, but any other shape can be used. It is
worth noted that the continuity of the electrodes generate a better
and more accurate planar electric field.
The Sensing Unit
[0045] The sensing unit 14 is composed of an array of the
Differential Electric Field Sensitive MOSFET (DeFET) 40 shown in
FIG. 8 acting as sensor elements 28 in FIG. 1b. DeFETs 40 allow us
to record accurate information about the in-situ intensity of the
applied nonuniform electric field. Referring to FIG. 1b, the sensor
elements 28 are individually addressable through terminals 25 to
read individual sensor values. As discussed above for the actuation
unit 12, each sensor 28 may be actuated using electrical signals or
a light beam, such as a laser. The sensors 28 are located in
convenient locations around where the sample 26 will be processed
by the actuation unit 12, such as in the space between the
actuation electrodes 24 so that measurements around the
characteristics of the sample 26 are recorded, and the intensity of
the applied non-uniform electric field and force. More detail will
now be given on the construction and operation of the DeFET 40.
[0046] The Electric Field Sensitive Field Effect Transistor
(eFET)
[0047] In the DEP levitation process, the manipulating electric
field is a nonuniform electric field (i.e. the electric field is a
function of the distance). Thus, we can detect the electric field
by using the Electric Field Sensitive MOSFET (eFET) 42 shown in
FIG. 5 as a novel electric field sensor. FIG. 5 shows the physical
structure of the eFET 42. It has two adjacent drains 44, two
adjacent floating gates 46 on silicon oxide (SiO.sub.2) layers 47,
and one source 48. For the eFET 42, it is equivalent to two
identical enhancement MOSFET devices, as shown in FIG. 6. Thus, the
two drain currents are equal if no electric field applied. Under
the influence of a nonuniform electric field, a current imbalance
between the two drain currents occur. Due to the drain current
dependence on the gate voltage, the eFET device 42 that has two
adjacent gates 46, and two adjacent drains 44, but isolated and
spatially separated from each other, can sense the difference
between the two gate voltages, which reflects the intensity of the
applied nonuniform electric field between the two locations of the
gates 46. FIG. 7 shows the circuit symbol of the eFET 42. To
increase the dynamic range of the eFET 42, the CMOS concept is used
to implement the DeFET 40 sensor, and this sensor may be used as
the basic sensing block in the electric field imager. If only one
side of the eFET were present (i.e. one gate 46, one drain, 44, and
the source 48), the drain current would still be related to the
electric field that is present, however, there would be nothing to
compare the value with. This would be useful if a proper
calibration technique was used. More accurate and meaningful
results are therefore obtained using the eFET 42 as described, with
a fixed distance between gates 46.
[0048] The Differential Electric Field Sensitive MOSFET (DeFET)
[0049] Referring to FIG. 8, the DeFET 40 is formed of two
complementary eFETs 42, one of them is a p-type eFET 42 and the
other is an n-type eFET 42. The equivalent circuit of the DeFET 40
is shown in FIG. 9. Referring to FIG. 9, the two gates 46 of the
p-type eFET 42 and n-type eFET 42 are connected with each other,
and there is a cross coupling between the two drains 44 of the
p-type eFET 42 and the n-type eFET 42. The output current I.sub.O
is equal to the difference between the two drain currents
I.sub.D2-I.sub.D3 (i.e. I.sub.O =I.sub.D2-I.sub.D3, see FIG. 9). On
the other hand, I.sub.D2 and I.sub.D3 are functions of the two
applied gate voltages V.sub.in1 and V.sub.in2, respectively, so,
I.sub.O is directly related to the difference between the two
applied gate voltages (V.sub.in1-V.sub.in2), and
V.sub.in1-V.sub.in2 is equal to the applied electric field above
the two gates 46 multiplied by the distance between them
(V.sub.in1-V.sub.in2/d =E), where d is the distance between the two
split gates 46, which is constant. So, I.sub.O is related directly
to the intensity of the applied nonuniform electric field. Thus by
measuring I.sub.O we can detect the intensity of the nonuniform
electric field.
The Read-out Circuit
[0050] For the read-out circuit 50, a higher differential gain is
needed to amplify the small current signal at the output; also, it
has to have a high common mode rejection ratio (CMRR) to reject any
common mode signal. Referring to FIG. 10, a suitable read-out
circuit 50 is the Current-Mode Instrumentation Amplifier (CMIA)
proposed by Yehya H. Ghallab, Wael Badawy, Karan V. I. S. Kaler and
Brent J. Maundy in "A Novel Current-Mode Instrumentation Amplifier
Based on Operational Floating Current Conveyor", submitted to IEEE
Transaction in instrumentation and measurement, (33 pages), January
2003. It is formed of two operational floating current conveyors
(OFCC) 52, two feedback resistors (R.sub.w1 and R.sub.W2) 54, a
gain determined resistor (R.sub.G) 56 and a ground load (R.sub.L)
58.
The Characterization Unit
[0051] The characterization unit 16 reads the output of the sensors
28 and develops a 2D image for the values and compares it with the
actuated value. The difference between the actuation values and the
sensed values are used to detect and characterize the levitated
sample 26 and the characteristics of the contents and liquid inside
the micro-channel which may be used as the chamber 18. The
characterization unit 16 can also use a sequence of images and
process them using image and video processing algorithms to
identify the contents of the sample, algorithms such as edge
detection, motion tracking, or DSP techniques.
The Controller
[0052] The controller 20 adjusts the value of the actuation unit 12
so it generates the required force. The controller 20 may adjust
the actuation values using preprogrammed values, or it can read
values from the sensing unit 14 or the characterization unit 16 to
adjust the actuation unit 12 if needed.
Sensor-Actuation Integration
[0053] The integrated quadruple poles 24 with the sensing unit 14
is shown in FIG. 11a. It shows the quadrupole configuration to
levitate the sample with the proposed electric field sensors 28
(DeFET 40) implanted in the middle. FIG. 12 shows the simulation
results with the electric field sensors, represented by line 74 and
without the electric field sensors, represented by line 76. From
FIG. 12, we can observe that: [0054] a) The Electric field sensors
didn't disturb the profile of the electric field; alternatively, it
improves the profile as we under a very small levitation height
(Z=3 .mu.m) the levitated particle is on the stable range of
operation. In other words, the insertion of the DeFETs reduces the
appearance of the unstable regime of operation, thus, we can easily
levitate the cells can passively. [0055] b) The z component of the
dielectrophoertic force is increased, so we can levitate the heavy
cells without any need of any other external forces, also, we can
levitate the cell far from the electrodes, so many processes can be
done (e.g. cell fusion, . . . etc. . . . ).
[0056] The sensing part (i.e. DeFET) is analyzed, designed,
simulated, and implemented using Cadence analog design tool. The
schematic representation of a single DeFET 40 is shown in FIG. 13,
and the simulation results which confirm the functionality of the
DeFET is shown in FIG. 14, where the different lines show different
variations between the gates ranging from 3V (top line) to -3V
(bottom line). From this figure, we can observe the linear
relationship between the output current and the variation of the
two gate voltages, which can reflect the variation with the applied
electric field above the gates.
DeFET as an Impedance Sensor
[0057] We can also use a DeFET 40 as an impedance sensor by using
the technique shown in FIG. 17. In this figure, an excitation
electrode 60 is used to trap the sample 26, in this case, a
biocell, between it and the DeFET. The output current of the DeFET
40 is connected to a transimpedance amplifier 62 to convert the
output current into voltage. In this technique, by measuring the
output voltage, we can determine the impedance of the trapped
biocell 26. The mathematical derivation is shown below.
[0058] Here we have a biocell 26 above the DeFET 40, so the output
voltage (V.sub.owcell) is related to V.sub.in by the equation: V
owcell = V in R sen + ( R cell // C cell ) .times. ( R F // C F )
##EQU3## where RF is the feedback resistance, C.sub.F is the
feedback capacitance, R.sub.sen is the output resistance of the
DeFET 40, R.sub.cell is the biocell 26 resistance, and C.sub.cell
is the biocell 26 capacitance. To get R.sub.sen, we will determine
the output voltage without the biocell 26, and the above equation
will be: V o = V in R sen .times. ( R F // C F ) ##EQU4##
[0059] From the above equation, we can get R.sub.sen, so we can
simply use this value in the first equation to get the impedance of
the biocell (i.e. R.sub.cell//C.sub.cell).
Simulation
[0060] To verify the operational characteristics of the proposed
read out circuit 50, a simulation was developed using PSPICE
version 7.1. Then, the proposed CMIA was prototyped and the
simulation results were verified. The proposed current-mode
instrumentation amplifier (CMIA) is shown in FIG. 10. It uses two
OFCC 52. Each OFCC is constructed using a current feedback op amp
64 (such as serial no. AD846AQ,) and current-mirrors composed of
transistor arrays 66 (such as a device from Harris, serial no.
CA3096CE,). From FIG. 15, we can observe that the experimental
results validate the simulated results, and by using external
resistors, simply, we can control the gain. To measure the
common-mode rejection ratio (CMRR) of the circuit in FIG. 10, we
connected both v.sub.in1 and v.sub.in2 together to the same input
voltage source. CMRR was measured experimentally as a function of
frequency for a differential voltage gain of 20. The result
obtained is plotted in FIG. 16. From FIG. 16, we can see that the
proposed topology shows CMRR magnitude and bandwidth is .apprxeq.76
dB @185 KHz. In FIG. 16, a comparison between the proposed and the
currently used CMIA is done. We can observe that the proposed CMIA
circuit has higher CMRR as well a higher bandwidth associated with
this CMRR as shown by line 68 than other topologies, where line 70
is from A. A. Khan, M. A. Al-Turaigi and M. Abou El-Ela, in "An
Improved Current-mode Instrumentation Amplifier with Bandwidth
Independent of gain," IEEE Trans. Instr. Meas., vol. 44, no. 4,
1995, and line 72 is from B. Wilson in "Universal Conveyor
Instrumentation Amplifier," Elect. Let., vol. 25, no. 7, pp.
470-471, 1989 and S. J. G. Gift, in "An Enhanced Current-Mode
Instrumentation Amplifier," IEEE Trans. Instr. Meas., vol. 50, no.
1, pp. 85-88, 2001. So this CMIA is the best choice for our
design.
[0061] Immaterial modifications may be made to the invention
described here without departing from the invention. In the claims,
the word "comprising" preceding a listing of claim elements does
not exclude other elements being present in the method or apparatus
referred to. In the claims, the use of the indefinite article
preceding an element does not exclude more than one of the element
being present.
* * * * *