U.S. patent application number 11/805884 was filed with the patent office on 2007-10-11 for asynchronously-accessible memory devices and access methods.
This patent application is currently assigned to Micron Technology, Inc.. Invention is credited to Jeffrey S. Mailloux, Todd A. Merritt, Kevin J. Ryan, Brett L. Williams.
Application Number | 20070239956 11/805884 |
Document ID | / |
Family ID | 27791793 |
Filed Date | 2007-10-11 |
United States Patent
Application |
20070239956 |
Kind Code |
A1 |
Mailloux; Jeffrey S. ; et
al. |
October 11, 2007 |
Asynchronously-accessible memory devices and access methods
Abstract
Apparatus and methods may operate to switch between burst modes
and pipelined modes without using a WCBR (write and column address
select before row address select) cycle, as well as to select an
external address data path, instruct a memory to perform a desired
memory operation, and perform the desired memory operation until
terminated.
Inventors: |
Mailloux; Jeffrey S.;
(Boise, ID) ; Ryan; Kevin J.; (Meridian, ID)
; Merritt; Todd A.; (Boise, ID) ; Williams; Brett
L.; (Eagle, ID) |
Correspondence
Address: |
SCHWEGMAN, LUNDBERG & WOESSNER, P.A.
P.O. BOX 2938
MINNEAPOLIS
MN
55402
US
|
Assignee: |
Micron Technology, Inc.
|
Family ID: |
27791793 |
Appl. No.: |
11/805884 |
Filed: |
May 24, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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08984563 |
Dec 3, 1997 |
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11805884 |
May 24, 2007 |
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08650719 |
May 20, 1996 |
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08984563 |
Dec 3, 1997 |
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08584600 |
Jan 11, 1996 |
5966724 |
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08650719 |
May 20, 1996 |
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Current U.S.
Class: |
711/169 |
Current CPC
Class: |
G11C 7/1027 20130101;
G11C 7/1039 20130101; G11C 7/1024 20130101; G11C 7/20 20130101;
G11C 7/1015 20130101; G11C 7/1045 20130101 |
Class at
Publication: |
711/169 |
International
Class: |
G06F 12/00 20060101
G06F012/00 |
Claims
1. A method of accessing an asynchronous memory, including:
switching between a burst extended data out (EDO) mode and a
pipelined EDO mode without using a WCBR (write and column address
select before row address select) cycle; selecting an external
address data path; instructing the asynchronous memory to perform a
desired memory operation; and performing the desired memory
operation until terminated.
2. The method of claim 1, wherein the selecting includes selecting
the external address data path from a buffer when the switching
switches to the burst EDO mode.
3. The method of claim 1, wherein the desired memory operation is
selected from a group consisting of a read operation and a write
operation.
4. The method of claim 1, wherein the performing includes obtaining
an external column address to perform the desired memory
operation.
5. The method of claim 4, wherein the performing includes iterating
the obtaining until terminated.
6. The method of claim 1, wherein the performing includes
generating an internal column address to perform the desired memory
operation.
7. The method of claim 6, wherein the generating includes iterating
the generating until terminated.
8. The method of claim 1, further including: obtaining a first
external column address; and accessing the asynchronous memory when
the switching switches to the pipeline EDO mode.
9. The method of claim 8, further including: obtaining a second
external column address subsequent to receiving the first external
column address during operation in the pipelined EDO mode.
10. The method of claim 1, further including: generating an
internal column address subsequent to receiving an external column
address during operation in the burst EDO mode, the internal column
address patterned after the external column address.
11. The method of claim 1, further including: selecting an internal
address pathway based on the switching between the burst EDO mode
and the pipelined EDO mode.
12. The method of claim 1, wherein the selecting further including:
selecting an initial buffered external address data path; obtaining
an initial external column address; accessing the asynchronous
memory; and generating internal column addresses when the switching
switches to the burst EDO mode.
13. An asynchronous memory device, including: mode selection
circuitry configured to select between a burst extended data out
(EDO) mode and a pipelined EDO mode; an external column address
data path to operate during pipelined EDO mode operations; an
internal column address generation module to operate during burst
EDO mode operations; and pipelined/burst circuitry to couple to the
mode selection circuitry and to switch between the pipelined EDO
mode and the burst EDO mode without using a WCBR (write and column
address select before row address select) cycle.
14. The asynchronous memory device of claim 13, further including:
selection circuitry for selecting between a read operation and a
write operation.
15. The asynchronous memory device of claim 13, wherein the
pipelined EDO mode operations include read and write operation
column address retrieval.
16. The asynchronous memory device of claim 13, wherein the burst
EDO mode operations include read and write operation column address
generation.
17. The asynchronous memory device of claim 13, further including:
an external mode selection pin coupled to the mode selection
circuitry.
18. The asynchronous memory device of claim 13, further including:
asynchronous dynamic random access memory cells to couple to the
internal column address generation module.
19. The asynchronous memory device of claim 13, wherein the
pipelined/burst circuitry includes a buffer to store an
address.
20. The asynchronous memory device of claim 19, wherein the
pipelined/burst circuitry includes at least one counter to
increment the address.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of application Ser. No.
08/984,563, filed Dec. 3, 1997, which is a divisional of
application Ser. No. 08/650,719, filed May 20, 1996, which is a
Continuation-In-Part of application Ser. No. 08/584,600, filed Jan.
11, 1996, now U.S. Pat. No. 5,966,724.
[0002] The below listed applications, as indicated by serial number
and filing date, are all assigned to the assignee of the instant
application and were or are co-pending with and related to the
instant application: Ser. No. 08/370,761, filed Dec. 23, 1994 (now
U.S. Pat. No. 5,526,320, issued Jun. 11, 1996); Ser. No.
08/386,894, filed Feb. 10, 1995 (now U.S. Pat. No. 5,610,864,
issued Mar. 11, 1997); Ser. No. 08/386,563, filed Feb. 10, 1995
(now U.S. Pat. No. 5,652,724, issued Jul. 29, 1997); Ser. No.
08/457,650, filed Jun. 1, 1995 (now U.S. Pat. No. 6,804,760, issued
Oct. 12, 2004); Ser. No. 08/457,651, filed Jun. 1, 1995 (now U.S.
Pat. No. 5,675,549, issued Oct. 7, 1997); Ser. No. 08/497,354,
filed Jun. 30, 1995 (now U.S. Pat. No. 5,598,376, issued Jan. 28,
1997); Ser. No. 08/505,576, filed Jul. 20, 1995 (now abandoned);
Ser. No. 08/553,156, filed Nov. 7, 1995 (now U.S. Pat. No.
5,721,859, issued Feb. 24, 1998); Ser. No. 08/506,438, filed Jul.
24, 1995 (now U.S. Pat. No. 5,729,503, issued Mar. 17, 1998); and
Ser. No. 08/630,279, filed Apr. 11, 1996 (now U.S. Pat. No.
5,661,695, issued Aug. 26, 1997).
TECHNICAL FIELD
[0003] The embodiments disclosed relate to memory device
architectures designed to provide high density data storage with
high speed read and write access cycles, including dynamic random
access memory which is selectable between burst and pipelined
modes.
BACKGROUND
[0004] Dynamic Random Access Memory devices (DRAMS) are among the
highest volume and most complex integrated circuits manufactured
today. Except for their high volume production, the state of the
art manufacturing requirements of these devices would cause them to
be exorbitantly priced. Yet, due to efficiencies associated with
high volume production, the price per bit of these memory devices
is continually declining. The low cost of memory has fueled the
growth and development of the personal computer. As personal
computers have become more advanced, they in turn have required
faster and more dense memory devices, but with the same low cost of
the standard DRAM. Fast page mode DRAMS are a popular DRAM today.
In fast page mode operation, a row address strobe (/RAS) is used to
latch a row address portion of a multiplexed DRAM address. Multiple
occurrences of the column address strobe (/CAS) are then used to
latch multiple column addresses to access data within the selected
row. On the falling edge of /CAS an address is latched, and the
DRAM outputs are enabled. When /CAS transitions high the DRAM
outputs are placed in a high impedance state (tri-state). With
advances in the production of integrated circuits, the internal
circuitry of the DRAM operates faster than ever. This high speed
circuitry has allowed for faster page mode cycle times. A problem
exists in the reading of a DRAM when the device is operated with
minimum fast page mode cycle times. /CAS may be low for as little
as 15 nanoseconds, and the data access time from /CAS to valid
output data (tCAC) may be up to 15 nanoseconds; therefore, in a
worst case scenario there is no time to latch the output data
external to the memory device. For devices that operate faster than
the specifications require, the data may still only be valid for a
few nanoseconds. On a heavily loaded microprocessor memory bus,
trying to latch an asynchronous signal that is valid for only a few
nanoseconds is very difficult. Even providing a new address every
35 nanoseconds requires large address drivers which create
significant amounts of electrical noise within the system. To
increase the data throughput of a memory system, it has been common
practice to place multiple devices on a common bus. For example,
two fast page mode DRAMS may be connected to common address and
data buses. One DRAM stores data for odd addresses, and the other
for even addresses. The /CAS signal for the odd addresses is turned
off (high) when the /CAS signal for the even addresses is turned on
(low). This interleaved memory system provides data access at twice
the rate of either device alone. If the first /CAS is low for 20
nanoseconds and then high for 20 nanoseconds while the second /CAS
goes low, data can be accessed every 20 nanoseconds or 50
megahertz. If the access time from /CAS to data valid is fifteen
nanoseconds, the data will be valid for only five nanoseconds at
the end of each 20 nanosecond period when both devices are
operating in fast page mode. As cycle times are shortened, the data
valid period goes to zero.
[0005] There is a demand for faster, higher density, random access
memory integrated circuits which provide a strategy for integration
into today's personal computer systems. In an effort to meet this
demand, numerous alternatives to the standard DRAM architecture
have been proposed. One method of providing a longer period of time
when data is valid at the outputs of a DRAM without increasing the
fast page mode cycle time is called Extended Data Out (EDO) mode.
In an EDO DRAM the data lines are not tri-stated between read
cycles in a fast page mode operation. Instead, data is held valid
after /CAS goes high until sometime after the next /CAS low pulse
occurs, or until /RAS or the output enable (/OE) goes high.
Determining when valid data will arrive at the outputs of a fast
page mode or EDO DRAM can be a complex function of when the column
address inputs are valid, when /CAS falls, the state of /OE and
when /CAS rose in the previous cycle. The period during which data
is valid with respect to the control line signals (especially /CAS)
is determined by the specific implementation of the EDO mode, as
adopted by the various DRAM manufacturers.
[0006] Methods to shorten memory access cycles tend to require
additional circuitry, additional control pins and nonstandard
device pinouts. The proposed industry standard synchronous DRAM
(SDRAM)for example has an additional pin for receiving a system
clock signal. Since the system clock is connected to each device in
a memory system, it is highly loaded, and it is always toggling
circuitry in every device. SDRAMs also have a clock enable pin, a
chip select pin and a data mask pin. Other signals which appear to
be similar in name to those found on standard DRAMs have
dramatically different functionality on a SDRAM. The addition of
several control pins has required a deviation in device pinout from
standard DRAMs which further complicates design efforts to utilize
these new devices. Significant amounts of additional circuitry are
required in the SDRAM devices which in turn result in higher device
manufacturing costs.
[0007] In order for existing computer systems to use an improved
device having a nonstandard pinout, those systems must be
extensively modified. Additionally, existing computer system memory
architectures are designed such that control and address signals
may not be able to switch at the frequencies required to operate
the new memory device at high speed due to large capacity loads on
the signal lines. The Single In-Line Memory Module (SIMM) provides
an example of what has become an industry standard form of
packaging memory in a computer system. On a SIMM, all address lines
connect to all DRAMs. Further, the row address strobe (/RAS) and
the write enable (/WE) are often connected to each DRAM on the
SIMM. These lines may have high capacitive loads as a result of the
number of device inputs driven by them. SIMM devices also typically
ground the output enable (/OE) pin making /OE a less attractive
candidate for providing extended functionality to the memory
devices.
[0008] There is a great degree of resistance to any proposed
deviations from the standard SIMM design due to the vast number of
computers which use SIMMs. Industry's resistance to radical
deviations from the standard, and the inability of current systems
to accommodate the new memory devices will delay their widespread
acceptance. Therefore only limited quantities of devices with
radically different architectures will be manufactured initially.
This limited manufacture prevents the reduction in cost which
typically can be accomplished through the manufacturing
improvements and efficiencies associated with a high volume
product.
[0009] Additionally, there is a demand for multi-functional random
access memory integrated circuits which provide a strategy for
integration into systems having differing memory needs. Some
applications use random memory access, while other applications use
sequential memory access. However, prior asynchronous DRAMS did not
have both burst and pipelined modes of operation. Thus, such prior
asynchronous DRAMs did not support applications requiring both
modes of operation. Consequently, the need arose for an
asynchronous DRAM which had both burst and pipelined modes of
operation.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The features of the various embodiments of the invention, as
well as advantages, will be best understood by reference to the
appended claims, detailed description of particular embodiments and
accompanying drawings where:
[0011] FIG. 1 is an electrical schematic diagram of a memory device
in accordance with some embodiments of the invention;
[0012] FIG. 2 is a table showing linear versus interleaved
addressing formats;
[0013] FIG. 3 is a pinout of the memory device of FIG. 1;
[0014] FIG. 4 is a timing diagram for a method of accessing the
device of FIG. 1;
[0015] FIG. 5 is a further timing diagram for accessing the device
of FIG. 1;
[0016] FIG. 6 is an electrical schematic diagram of a Single
In-Line Memory Module in accordance with some embodiments of the
invention;
[0017] FIG. 7 is a front view of a Single In-Line Memory Module
designed in accordance with the teachings of some embodiments of
the invention;
[0018] FIG. 8 is a table of the pin numbers and signal names of the
Single In-Line Memory Module of FIG. 7;
[0019] FIG. 9 is a block diagram of an embodiment of an exemplary
memory device in accordance with some embodiments of the
invention;
[0020] FIG. 10 is a block diagram an embodiment of a portion of the
memory device of FIG. 9;
[0021] FIG. 11 is a schematic diagram of a portion of control logic
of the memory device of FIG. 9;
[0022] FIG. 12 is a process flow diagram for switching between
burst and pipelined modes of operation in accordance with some
embodiments of the invention;
[0023] FIGS. 13 and 14 are timing diagrams for burst EDO write and
read cycles, respectively, for a row-based switching embodiment in
accordance with some embodiments of the invention;
[0024] FIGS. 15 and 16 are timing diagrams for pipelined EDO write
and read cycles, respectively, for the row-based switching
embodiment of FIGS. 13 and 14;
[0025] FIG. 17 is a timing diagram for a column-based switching
embodiment in accordance with some embodiments of the
invention;
[0026] FIG. 18 is a top elevation view of a pinout diagram of an
exemplary Dynamic Random Access Memory in accordance with some
embodiments of the invention;
[0027] FIG. 19 is a block diagram of an exemplary Single In-Line
Memory Module in accordance with some embodiments of the invention;
and
[0028] FIG. 20 is a block diagram of an exemplary system in
accordance with various embodiments of the invention.
DETAILED DESCRIPTION
[0029] FIG. 1 is a schematic representation of a sixteen megabit
device designed in accordance with some embodiments of the
invention. The device is organized as a 2Meg.times.8 burst EDO DRAM
having an eight bit data input/output path 10 providing data
storage for 2,097,152 bytes of information in the memory array 12.
The device of FIG. 1 has an industry standard pinout for eight bit
wide EDO DRAMs. An active-low row address strobe (/RAS) signal 14
is used to latch a first portion of a multiplexed memory address,
from address inputs A0 through A10 16, in latch 18. The latched row
address 20 is decoded in row decoder 22. The decoded row address is
used to select a row of the memory array 12. A column address
strobe (/CAS) signal 24 is used to latch a second portion of a
memory address from address inputs 16 into column address counter
26. The latched column address 28 is decoded in column address
decoder 30. The decoded column address is used to select a column
of the memory array 12.
[0030] In a burst read cycle, data within the memory array located
at the row and column address selected by the row and column
address decoders is read out of the memory array and sent along
data path 32 to output latches 34. Data 10 driven from the burst
EDO DRAM may be latched external to the device in synchronization
with /CAS after a predetermined number of /CAS cycle delays
(latency). For a two cycle latency design, the first /CAS falling
edge is used to latch the initial address for the burst access. The
first burst data from the memory is driven from the memory after
the second /CAS falling edge, and remains valid through the third
/CAS falling edge. Once the memory device begins to output data in
a burst read cycle, the output drivers 34 will continue to drive
the data lines without tri-stating the data outputs during /CAS
high intervals dependent on the state of the output enable and
write enable (/OE and /WE) control lines, thus allowing additional
time for the system to latch the output data. Once a row and a
column address are selected, additional transitions of the /CAS
signal are used to advance the column address within the column
address counter in a predetermined sequence. The time at which data
will be valid at the outputs of the burst EDO DRAM is dependent
only on the timing of the /CAS signal provided that /OE is
maintained low, and /WE remains high. The output data signal levels
may be driven in accordance with standard CMOS, TTL, LVTTL, GTL,
HSTL, among other output level specifications.
[0031] The address may be advanced linearly, or in an interleaved
fashion for maximum compatibility with the overall system
requirements. FIG. 2 is a table which shows linear and interleaved
addressing sequences for burst lengths of 2,4 and 8 cycles. The "V"
for starting addresses A1 and A2 in the table represent address
values that remain unaltered through the burst sequence. The column
address may be advanced with each /CAS transition, each pulse, or
multiple of /CAS pulses in the event that more than one data word
is read from the array with each column address. When the address
is advanced with each transition of the /CAS signal, data is also
driven from the part after each transition following the device
latency which is then referenced to each edge of the /CAS signal.
This allows for a burst access cycle where the highest switching
control line (/CAS) toggles only once (high to low or low to high)
for each memory cycle. This is in contrast to standard DRAMs which
require /CAS to go low and then high for each cycle, and
synchronous DRAMs which require a full clock cycle (high and low
transitions) for each memory cycle. For maximum compatibility with
existing EDO DRAM devices, some embodiments will be further
described in reference to a device designed to latch and advance a
column address on falling edges of the /CAS signal.
[0032] It may be desirable to latch and increment the column
address after the first /CAS falling edge in order to apply both
the latched and incremented addresses to the array at the earliest
opportunity in an access cycle. For example, a device may be
designed to access two data words per cycle (prefetch
architecture). The memory array for a prefetch architecture device
may be split into odd and even array halves. The column address
least significant bit is then used to select between odd and even
halves while the other column address bits select a column within
each of the array halves. In an interleaved access mode with column
address 1, data from columns 0 and 1 would be read and the data
from column 1 would be output followed by the data from column 0 in
accordance with standard interleaved addressing as described in
SDRAM specifications. In a linear access mode column address 1
would be applied to the odd array half, and incremented to address
2 for accessing the even array half to fulfill the two word access.
One method of implementing this type of device architecture is to
provide a column address incrementing circuit between the column
address counter and the even array half. The incrementing circuit
would increment the column address only if the initial column
address in a burst access cycle is odd, and the address mode is
linear. Otherwise the incrementing circuit would pass the column
address unaltered. For a design using a prefetch of two data
accesses per cycle, the column address would be advanced once for
every two active edges of the /CAS signal. Prefetch architectures
where more than two data words are accessed are also possible.
[0033] Other memory architectures applicable to embodiments of the
invention include a pipelined architecture where memory accesses
are performed sequentially, but each access may require more than a
single cycle to complete. In a pipelined architecture the overall
throughput of the memory will approach one access per cycle, but
the data out of the memory may be offset by a number of cycles due
to the pipeline length and/or the desired latency from /CAS.
[0034] In the burst access memory device, each new column address
from the column address counter is decoded and is used to access
additional data within the memory array without the requirement of
additional column addresses being specified on the address inputs
16. This burst sequence of data will continue for each /CAS falling
edge until a predetermined number of data accesses equal to the
burst length has occurred. A /CAS falling edge received after the
last burst address has been generated will latch another column
address from the address inputs 16 and a new burst sequence will
begin. Read data is latched and output with each falling edge of
/CAS after the first /CAS latency.
[0035] For a burst write cycle, data 10 is latched in input data
latches 34. Data targeted at the first address specified by the row
and column addresses is latched with the /CAS signal when the first
column address is latched (write cycle data latency is zero). Other
write cycle data latency values are possible; however, for today's
memory systems, zero is preferred. Additional input data words for
storage at incremented column address locations are latched by /CAS
on successive /CAS pulses. Input data from the input latches 34 is
passed along data path 32 to the memory array where it is stored at
the location selected by the row and column address decoders. As in
the burst read cycle previously described, a predetermined number
of burst access writes will occur without the requirement of
additional column addresses being provided on the address lines 16.
After the predetermined number of burst writes has occurred, a
subsequent /CAS pulse will latch a new beginning column address,
and another burst read or write access will begin.
[0036] The memory device of FIG. 1 may include the option of
switching between burst EDO and standard EDO modes of operation. In
this case, the write enable signal /WE 36 may be used at the row
address latch time (/RAS falling, /CAS high) to determine whether
memory accesses for that row will be burst or page mode cycles. If
/WE is low when /RAS falls, burst access cycles are selected. If
/WE is high at /RAS falling, standard extended data out (EDO) page
mode cycles are selected. Both the burst and EDO page mode cycles
allow for increased memory device operating frequencies by not
requiring the data output drivers 34 to place the data lines 10 in
a high impedance state between data read cycles while /RAS is low.
DRAM control circuitry 38, in addition to performing standard DRAM
control functions, controls the I/O circuitry 34 and the column
address counter/latch 26 in accordance with the mode selected by
/WE when /RAS falls. In a burst mode only DRAM, or in a device
designed with an alternate method of switching between burst and
non-burst access cycles, the state of /WE when /RAS falls may be
used to switch between other possible modes of operation such as
interleaved versus linear addressing modes.
[0037] The write enable signal is used in burst access cycles to
select read or write burst accesses when the initial column address
for a burst cycle is latched by /CAS. /WE low at the column address
latch time selects a burst write access. /WE high at the column
address latch time selects a burst read access. The level of the
/WE signal must remain high for read and low for write burst
accesses throughout the burst access. A low to high transition
within a burst write access will terminate the burst access,
preventing further writes from occurring. A high to low transition
on /WE within a burst read access will likewise terminate the burst
read access and will place the data output 10 in a high impedance
state. Transitions of the /WE signal may be locked out during
critical timing periods within an access cycle in order to reduce
the possibility of triggering a false write cycle. After the
critical timing period the state of /WE will determine whether a
burst access continues, is initiated, or is terminated. Termination
of a burst access resets the burst length counter and places the
DRAM in a state to receive another burst access command. Both /RAS
and /CAS going high during a burst access will also terminate the
burst access cycle placing the data drivers in a high impedance
output state, and resetting the burst length counter. Read data may
remain valid at the device outputs if /RAS alone goes high while
/CAS is active for compatibility with hidden refresh cycles,
otherwise /RAS high alone may be used to terminate a burst access.
A minimum write enable pulse width is only required when it is
desired to terminate a burst read and then begin another burst
read, or terminate a burst write prior to performing another burst
write with a minimum delay between burst accesses. In the case of
burst reads, /WE will transition from high to low to terminate a
first burst read, and then /WE will transition back high prior to
the next falling edge of /CAS in order to specify a new burst read
cycle. For burst writes, /WE would transition high to terminate a
current burst write access, then back low prior to the next falling
edge of /CAS to initiate another burst write access.
[0038] A basic implementation of the device of FIG. 1 may include a
fixed burst length of 4, a fixed /CAS latency of 2 and a fixed
interleaved sequence of burst addresses. This basic implementation
requires very little additional circuitry to the standard EDO page
mode DRAM, and may be mass produced to provide the functions of
both the standard EDO page mode and burst EDO DRAMs. This device
also allows for the output enable pin (/OE) to be grounded for
compatibility with many SIMM module designs. When not disabled
(tied to ground), /OE is an asynchronous control which will prevent
data from being driven from the part in a read cycle if it is
inactive (high) prior to /CAS falling and remains inactive beyond
/CAS rising. If these setup and hold conditions are not met, then
the read data may be driven for a portion of the read cycle. It is
possible to synchronize the /OE signal with /CAS, however this
would typically increase the /CAS to data valid delay time and does
not allow for the read data to be disabled prior to /RAS high
without an additional /CAS low pulse which would otherwise be
unnecessary. In some embodiments, if /OE transitions high at any
time during a read cycle the outputs will remain in a high
impedance state until the next falling edge of /CAS despite further
transitions of the /OE signal.
[0039] Programmability of the burst length, /CAS latency and
address sequences may be accomplished through the use of a mode
register 40 which latches the state of one or more of the address
input signals 16 or data signals 10 upon receipt of a
write-/CAS-before-/RAS (WCBR) programming cycle. In such a device,
outputs 44 from the mode register control the required circuits on
the DRAM. Burst length options of 2, 4, 8 and 20 full page as well
as /CAS latencies of 1, 2 and 3 may be provided. Other burst length
and latency options may be provided as the operating speeds of the
device increase, and computer architectures evolve. The device of
FIG. 1 includes programmability of the address sequence by latching
the state of the least significant address bit during a WCBR cycle.
The burst length and /CAS latency for this particular embodiment
are fixed. Other possible alterations in the feature sets of this
DRAM include having a fixed burst mode only, selecting between
standard fast page mode (non-EDO) and burst mode, and using the
output enable pin (/OE) 42 in combination with /RAS to select
between modes of operation. Also, a WCBR refresh cycle could be
used to select the mode of operation rather than a control signal
in combination with /RAS. A more complex memory device may provide
additional modes of operation such as switching between fast page
mode, EDO page mode, static column mode and burst operation through
the use of various combinations of /WE and /OE at /RAS falling
time. One mode from a similar set of modes may be selected through
the use of a WCBR cycle using multiple address or data lines to
encode the desired mode. Alternately, a device with multiple modes
of operation may have wire bond locations, or programmable fuses
which may be used to program the mode of operation of the
device.
[0040] A sixteen bit wide burst EDO mode DRAM designed in
accordance with the teachings of some embodiments of this invention
has two column address strobe input pins /CASH and /CASL. For read
cycles only /CASL needs to toggle. /CASH is may be high or may
toggle with /CASL during burst read cycles, all sixteen data bits
will be driven out of part during a read cycle even if /CASH
remains inactive. In a typical system application, a microprocessor
will read all data bits on a data bus in each read cycle, but may
only write certain bytes of data in a write cycle. Allowing one of
the /CAS control signals to remain static during read cycles helps
to reduce overall power consumption and noise within the system.
For burst write access cycles, each of the /CAS signals (CASH and
/CASL) acts as a write enable for an eight bit width of the data.
All sixteen data inputs will be latched when the first of the /CAS
signals transitions low. If only one /CAS signal transitions low,
then the eight bits of data associated with the /CAS that remained
high will not be stored in the memory.
[0041] Just as fast page mode DRAMs and EDO DRAMs are available in
numerous configurations including x1, x4, x8 and x16 data widths,
and 1 Megabit, 4 Megabit, 16 Megabit and 64 Megabit densities; the
memory device of some embodiments of the invention may take the
form of many different memory organizations. It is believed that
one who is skilled in the art of integrated circuit memory design
can, with the aide of this specification design a variety of memory
devices which do not depart from the scope of the various
embodiments. It is therefore believed that detailed descriptions of
the various memory device organizations applicable to the
embodiments are not necessary.
[0042] FIG. 3 shows a preferred pinout for the device of FIG. 1. It
should be noted that the pinout for this new burst EDO memory
device is identical to the pinout for a standard EDO DRAM. The
common pinout allows this new device to be used in existing memory
designs with minimum design changes. The common pinout also allows
for ease of new designs by those of skill in the art who are
familiar with the standard EDO DRAM pinout. Variations of the
described embodiments which maintain the standard EDO DRAM pinout
include driving the /CAS pin with a system clock signal to
synchronize data access of the memory device with the system clock.
For this embodiment, it may be desirable to use the first /CAS
active edge after /RAS falls to latch the row address, a later edge
may be used to latch the first column address of a burst access
cycle. After row and column addresses are latched within the
device, the address may be incremented internally to provide burst
access cycles in synchronization with the system clock. Other pin
function alternatives include driving the burst address
incrementing signal on the /OE pin since the part does not require
a data output disable function on this pin. Other alternate uses of
the /OE pin also allow the device to maintain the standard EDO
pinout, but provide increased functionality such as burst mode
access. The /OE pin may be used to signal the presence of a valid
column starting address, or to terminate a burst access. Each of
these embodiments provides for a high speed burst access memory
device which may be used in current memory systems with a minimum
amount of redesign.
[0043] FIG. 4 is a timing diagram for performing a burst read
followed by a burst write of the device of FIG. 1. In FIG. 4, a row
address is latched by the /RAS signal. /WE is low when /RAS falls
for an embodiment of the design where the state of the /WE pin is
used to specify a burst access cycle at /RAS time. Next, /CAS is
driven low with /WE high to initiate a burst read access, and the
column address is latched. The data out signals (DQ's) are not
driven in the first /CAS cycle. On the second falling edge of the
/CAS signal, the internal address generation circuitry advances the
column address and begins another access of the array, and the
first data out is driven from the device after a /CAS to data
access time (tCAC). Additional burst access cycles continue, for a
device with a specified burst length of four, until the fifth
falling edge of /CAS which latches a new column address for a new
burst read access. /WE falling in the fifth /CAS cycle terminates
the burst access, and initializes the device for additional burst
accesses. The sixth falling edge of /CAS with /WE low is used to
latch a new burst address, latch input data and begin a burst write
access of the device. Additional data values are latched on
successive /CAS falling edges until /RAS rises to terminate the
burst access.
[0044] FIG. 5 is a timing diagram depicting burst write access
cycles followed by burst read cycles. As in FIG. 4, the /RAS signal
is used to latch the row address. The first /CAS falling edge in
combination with /WE low begins a burst write access with the first
data being latched. Additional data values are latched with
successive /CAS falling edges, and the memory address is advanced
internal to the device in either an interleaved or sequential
manner. On the fifth /CAS falling edge a new column address and
associated write data are latched. The burst write access cycles
continue until the /WE signal goes high in the sixth /CAS cycle.
The transition of the /WE signal terminates the burst write access.
The seventh /CAS low transition latches a new column address and
begins a burst read access (/WE is high). The burst read continues
until /RAS rises terminating the burst cycles.
[0045] It should be noted from FIGS. 3 and 4 that for burst read
cycles the data remains valid on the device outputs as long as the
/OE pin is low, except for brief periods of data transition. Also,
since the /WE pin is low prior to or when /CAS falls, the data
input/output lines are not driven from the part during write
cycles, and the /OE pin is a "don't care". Only the /CAS signal and
the data signals toggle at relatively high frequency, and no
control signals other than /CAS are required to be in an active or
inactive state for one /CAS cycle time or less. This is in contrast
to SDRAMs which often require row address strobes, column address
strobes, data mask, and read/write control signals to be valid for
one clock cycle or less for various device functions. Typical DRAMs
also allow for the column address to propagate through to the array
to begin a data access prior to /CAS falling. This is done to
provide fast data access from /CAS falling if the address has been
valid for a sufficient period of time prior to /CAS falling for the
data to have been accessed from the array. In these designs an
address transition detection circuit is used to restart the memory
access if the column address changes prior to /CAS falling. This
method actually requires additional time for performing a memory
access since it must allow for a period of time at the beginning of
each memory cycle after the last address transition to prepare for
a new column address. Changes in the column address just prior to
/CAS falling may increase the access time by approximately five
nanoseconds. An embodiment of the invention will not allow the
column address to propagate through to the array until after /CAS
has fallen. This eliminates the need for address transition
detection circuitry, and allows for a fixed array access relative
to /CAS. However, it should be understood that the address counter
may be advanced early on /CAS in accordance with some embodiments
of the invention.
[0046] FIG. 6 is a schematic representation of a single in-line
memory module (SIMM) designed in accordance with some embodiments
of the invention. The SIMM has a standard SIMM module pinout for
physical compatibility with existing systems and sockets.
Functional compatibility with EDO page mode SIMMs is maintained
when each of the 2 Meg.times.8 memory devices 10, 12, 14 and 16 are
operated in an EDO page mode. Each of the /CAS signals 18, 20, 22
and 24 control one byte width of the 32 bit data bus 26, 28, 30 and
32. A /RAS 34 signal is used to latch a row address in each of the
memory devices, and is used in combination with /WE 36 to select
between page mode and burst mode access cycles. Address signals 38
provide a multiplexed row and column address to each memory device
on the SIMM. In burst mode, only active /CAS control lines are
required to toggle at the operating frequency of the device, or at
half the frequency if each edge of the /CAS signal is used as
described above. The data lines are required to be switchable at
half of the frequency of the /CAS lines or at the same frequency,
and the other control and address signals switch at lower
frequencies than /CAS and the data lines. As shown in FIG. 6, each
/CAS signal and each data line is connected to a single memory
device allowing for higher frequency switching than the other
control and address signals. Each of the memory devices 10, 12, 14
and 16 is designed in accordance with embodiments of the invention
allowing for a burst mode of operation providing internal address
generation for sequential or interleaved data access from multiple
memory address locations with timing relative to the /CAS control
lines after a first row and column address are latched.
[0047] FIG. 7 shows a front view of another SIMM designed in
accordance with some embodiments of the invention. Each device on
the SIMM is a 4 Megabit DRAM organized as 1 Meg.times.4. In this
configuration, a single /CAS controls two memory devices to provide
access to a byte width of the data bus. The eight devices shown
form a 4 Megabyte SIMM in a 32 bit width. For an 8 Megabyte SIMM in
a 32 bit width, there are eight additional devices on the back side
(not shown).
[0048] FIG. 8 shows a preferred pinout for a memory module designed
in accordance with the device of FIG. 7. This pinout is compatible
with pinouts for Fast Page Mode SIMMs and EDO SIMMs. A presence
detect pin is provided for indication of EDO operation on pin 66,
and in accordance with standard EDO part types, an /OE input is
provided on pin 46.
[0049] Alternate embodiments of the SIMM modules of FIG.'s 5, 6,
and 7 include the use of two /RAS signals with each controlling a
sixteen bit width of the data bus in accordance with standard SIMM
module pinouts. Four more 2 M.times.8 EDO Burst Mode DRAMs may be
added to the device of FIG. 6 to provide for a 4 M.times.32 bit
SIMM. Sixteen bit wide DRAMs may also be used, these will typically
have two /CAS signals each of which controls an eight bit data
width. The incorporation of parity bits, or error detection and
correction circuitry provide other possible SIMM module
configurations. Methods of performing error detection and/or
correction are well known to those of skill in the art, and
detailed descriptions of such circuits are not provided in this
application. Additional SIMM designs using the novel memory device
described herein may be designed by one of skill in the art with
the aid of this specification. The embodiments have been described
with reference to SIMM designs, but is not limited to SIMMs.
Embodiments of the invention are equally applicable to other types
of memory modules including Dual In-Line Memory Modules (DIMMs) and
Multi-Chip Modules (MCMs).
[0050] Burst/Pipelined Mode Embodiment
[0051] Referring to FIG. 9, there is shown a block diagram of a
memory device (memory) 100 in accordance with various embodiments.
Memory 100 in the embodiment illustrative shown is an asynchronous
DRAM. By asynchronous it should be understood that operation of
memory 100 need not be synchronized to an external clock signal. In
other words, no system clock signal need be applied to memory 100.
Consequently, memory 100 is smaller, and requires less circuitry
and control pins than an SDRAM.
[0052] Memory 100 receives several signals, including /RAS and /CAS
signals 112, 114, /WE signal 117, address (ADDR) signal 115, and
/OE signal 118. ADDR signal 115 may be made up of input pins
(inputs) A0 through An inclusive (A0-An), where n is an integer
greater than zero. Multiplexer/Column-Address Buffer 122 is coupled
for receiving ADDR signal 115. Furthermore, in accordance with one
embodiment of the invention, an input control signal is provided to
memory 100. This signal is pipelined EDO/burst EDO select (P/B)
signal 120, where the "/" indicates that burst mode is active low.
P/B signal 120 may be supplied externally to memory 100 (e.g., via
a control pin of memory 100) to control logic 121. Alternatively,
P/B signal 120 may be omitted for a standard enable signal to
generate mode select internal to control logic 121.
[0053] Memory 100 includes memory array 111. While memory array 111
is referred to in the singular, it should be understood, as
illustratively shown in FIG. 9, that memory array 111 may be made
up of one or more addressable memory arrays. Memory 100 may provide
an output read from memory array 111 via data (DQ) signal 116.
Alternatively, memory 100 is capable of receiving information to be
stored in memory array 111 via DQ signal 116. DQ signal 116 is made
up of I/O pins DQ1 through DQm inclusive (DQ1-DQm), where m
represents an integer greater than or equal to one. Alternatively,
separate data input and output paths may be used.
[0054] Memory 100 also includes many known elements such as row
address buffers 101, refresh counter 102, refresh controller 103,
column decoder 104, data-in buffer 105, data-out buffer 107, I/O
gating sense amplifiers 106, row decoder 108, and timing control
109.
[0055] Referring to FIG. 10, there is shown a block diagram of an
embodiment of a portion of memory 100 of FIG. 9. ADDR signal 115
provides external inputs XA0-XAn. Inputs XA2-XAn are provided
directly to temporary storage 119. Temporary storage 119 may be a
latch or other memory device. Input XA1 is provided to multiplexer
(MUX) 124, and input XA0 is provided to MUX 125. After which inputs
XA1 and XA0 are provided to respective locations in temporary
storage 119.
[0056] MUXs 124,125 also receive newburst signal 110 from control
logic 121 (shown in FIG. 9). Newburst signal 110 is employed as a
select signal as applied to MUXs 124, 125. Thus, if newburst signal
110 is active, memory 100 is in burst mode. Consequently, count 0
and count 1 signals 140, 141 are selected over XA0 and XA1 signals
as applied to MUXs 124, 125. If newburst signal 110 is not active,
memory 100 is in pipelined mode. As a result, XA0 and XA1 are
selected over signals 140, 141 as applied to MUXs 124, 125.
[0057] In burst mode, newburst signal 110 is used to control
counter 149 to load and increment values. Counter 149 loads address
XA0 and XA1. After a first /CAS signal 114 cycle in burst mode
which uses the initial external values supplied for addresses XA0
and XA1, counter 149 increments those initial values and provides
new internally generated addresses A0 and A1 by supplying count 0
signal 140 and count 1 signal 141 to respective A0 and A1 locations
in temporary storage 119 through MUXs 125, 124. In this manner,
internal addresses may be generated based on an initial external
address.
[0058] While counter 149 is shown as a two (2) bit counter, it will
be readily apparent to one with ordinary skill in the art that this
is merely representative of one embodiment of the invention.
Consequently, it should be understood that other counter sizes may
be employed in accordance with various embodiments. Moreover,
counter 149 may also include burst length counter 143. In such a
case, burst length counter 143 may include a latch for temporarily
storing a current burst length count and a comparator for ensuring
the count does not exceed a maximum length for a burst
sequence.
[0059] Referring now to FIG. 11, there is shown a schematic diagram
of mode circuitry 138 for generating newburst signal 110 in
accordance with various embodiments. Mode circuitry 138 is a
portion of control logic 121 (shown in FIG. 9). As shown, either
/OE signal 118, /WE signal 117, or P/B signal 120 maybe used to
provide newburst signal 110. CYa and CYb signals 126, 127 are
provided by burst length counter 143 (shown in FIG. 10). Newburst
signal 110 is employed to reset CYa and CYb signals 126, 127 (for
example to binary (1, 1)). Signals 126, 127 are decremented
binarily (for example, (1, 1), (1, 0), (0, 1), (0, 0)) such that
when an end of a burst length is reached (for example, (0, 0) for a
4-bit burst length), newburst signal 110 is enabled.
[0060] /CAS signal 114 is provided to delays 128, 129. In this
embodiment, delay 128 is longer than that of delay 129.
[0061] Flip-flop 130 is made up of two NAND gates 131, 132. Output
from delay 129 is used to reset and enable flip-flop 130.
[0062] In the case where burst mode is selected (active low), mode
select (/MS) signal 142 will be low. /MS signal 142 may be any of
signals 117, 118, 120 or a combination thereof. As /MS signal 142
is low, its input to NOR gates 113, 136 will be low ("logic zero").
Flip-flop 130 will be set such that output from it to NOR gate 136
is also low provided that output from delay 129 is low and that
output from NOR gate 135 is low. Output from NOR gate 135 will go
high when /CAS signal 114 rises causing a low pulse out of NAND
gate 134, and CYa 126 and CYb 127 are both low indicating that the
current burst sequence is complete. Both CYb 127 and CYa 126 are
set high at the beginning of a burst sequence. Consequently,
newburst signal 110 will remain low until burst mode is interrupted
or completed.
[0063] If pipelined mode is selected, /MS signal 142 will be high.
Thus, inputs to NOR gate 136 will be high ("logic one"), and thus
newburst signal 110 will remain high until pipelined mode is
interrupted.
[0064] With renewed reference to FIGS. 9 and 10, the following two
examples of operation of memory 100 should be considered. [0065] 1.
If mode select is active high (e.g., logic "1"), pipelined EDO mode
is selected for operation of memory 100. Control logic 121 in
response to receiving mode select pipelined information, provides
newburst signal 110 to MUX 123 to select external input XA0-XAn. In
this manner an external address via ADDR signal 115 may be sent
through buffer 122 to decoder 104 for each /CAS signal 114 cycle
for pipelined EDO mode. In other words, a new external column
address for memory array 111 may be provided for each access to
memory 100. Thus, while memory 100 is in pipelined EDO mode,
newburst signal 110 instructs buffer 122 to select address input
only from ADDR signal 115. [0066] 2. Alternatively, if mode select
is active low (e.g., logic "0"), burst EDO mode is selected for
operation of memory 100. Control logic 121 in response to receiving
mode select burst information, provides newburst signal 110 to
select input from buffer 122 via temporary storage 119 and counter
149. In this manner, for an access to memory 100, an address sent
from buffer 122 to decoder 104 is selected, namely the current
external address stored in buffer 122. This address is then
incremented in accordance with burst EDO mode by operation of
counter 149 and provided to decoder 104 through buffer 122.
[0067] It should be readily appreciated that embodiments of the
invention provide switching between burst and pipelined EDO modes
of operation of memory 100 for page mode accessing in either
mode.
[0068] When accessing several different column locations in a row
of memory array 111 (page mode access), a new external column
address for each access to memory array 111 may be provided to
memory 100 for pipelined EDO mode of operation. Thus, successive
external addresses, one for each /CAS signal 114 cycle, may be
provided to memory 100. This is particularly useful in applications
when column accesses are in a random or a patternless-series of
column addresses. By patternless-series, it should be understood to
mean a manner of memory addressing which does not have to comport
with any predefined scheme.
[0069] When accessing several different column locations in a row
of memory array 111 (again, page mode access), after receipt of an
external address for access to memory array 111, a subsequent, new
internal column addresses may be generated by memory 100 for each
subsequent access to memory array 111 in burst EDO mode of
operation. This is particularly useful in applications when column
accesses are in a predefined-series or in a sequence. Such
predefined-series and sequential operation include interleaved and
linear memory addressing schemes. It should be further understood
that successive external addresses, one for each set of /CAS signal
114 cycles, may be provided to memory 100 in accordance with
various embodiments for continued bursting.
[0070] With continued reference to FIG. 9 and reference to FIG. 12,
which is a process flow diagram for switching between burst and
pipelined EDO modes of operation in accordance with various
embodiments, one type of switching operation for memory 100 is
explained. At step 153, memory 100 is initialized. After which, it
is determined whether a row address has been received at step 154.
If a row address has not been received, memory 100 stays in wait
mode until a row address is received.
[0071] If a row address has been received, at step 159 it is
determined whether burst or pipelined EDO mode is desired. If
pipelined EDO mode is desired, an external address path is selected
at step 158. By path or pathway it should be understood to include
one or more signals. At step 150, memory 100 is instructed whether
to read (output) or write (input) information. If memory 100 is to
read information., an external column address is obtained at step
151. Next, at step 152, information is obtained from memory array
111 corresponding to the row address received at step 154 and the
external column address obtained at step 151. At step 153, it is
determined whether information should continue to be read from
memory 100 in the current pipelined EDO mode. If yes, another
external column address is obtained at step 151; however, if no,
memory 153 must wait for a next instruction.
[0072] If at step 150, memory 100 was instructed to write
information, then an external column address is obtained at step
155. After which, the appropriate information is provided to memory
array 111 at step 156 at a location corresponding to the row
address received at step 154 and the external column address
obtained at step 155. At step 157, it is determined whether memory
100 is to continue writing information in the current pipelined EDO
mode. If yes, then another external column address is obtained at
step 155. If no, memory 100 waits for a next instruction at step
174.
[0073] If at step 159, it was determined that memory 100 should be
in burst EDO mode, then an initial stored external address path is
selected at step 160. At step 161 it is determined whether
information is to be read or written to memory 100. If information
is to be read from memory 100, then at step 162 an initial external
column address is obtained. At step 163 information is obtained
from memory array 111 at the location specified by the row address
received at step 154 and the external column address obtained at
step 162.
[0074] At step 164, an internal column address is generated for
burst EDO mode and an alternative address path for providing
internal addresses to temporary storage 119 (shown in FIG. 10) is
selected. At step 165, information is obtained from memory array
111 according to the row address specified at step 154 and the
internal column address specified at step 164.
[0075] At step 166 it is determined whether to continue generating
internal column addresses. If yes, at step 164 the next internal
column address in the predefined-series is generated. If no, it is
determined whether information is to be read from memory 100 in the
current mode at step 167. If information is to continue to be read,
then another external column address is obtained at step 162. If
no, memory 100 waits for a next instruction at step 174.
[0076] If at step 161 memory 100 is instructed to write information
to memory array 111, then at step 168 an initial external column
address is obtained. Next, at step 169, information is provided to
memory array 111 at the location specified by the row address
received at step 154 and the external column address obtained at
step 168.
[0077] At step 170, an internal column address is generated in
accordance with a predefined-series. At step 171, information is
provided to memory array 111 at the location specified by the row
address received at step 154 and the internal column address
generated at step 170.
[0078] At step 172 it is determined whether to continue generating
internal column addresses. If internal column addresses are to be
continued to be generated, then the next internal column address in
the predefined-series is generated at step 170. If no, then at step
173 it is determined whether information is to continue to be
written to memory 100 in the burst EDO mode. If yes, then another
initial external column address is obtained at step 168. If no,
memory 100 waits for a next instruction at step 174.
[0079] Embodiments of the invention facilitate
random/patternless-series column accessing (using externally
generated addresses exclusively) and predefined-series/sequential
column accessing (using an initial externally generated address
followed by one or more internally generated addresses). This is
done without the additional above-described undesirable features
associated with SDRAMs. The various embodiments provide switching
between burst access, and non-burst access or pipelined modes of
operation without ceasing ("on-the-fly"). No WCBR cycle is needed
with burst/pipelined mode switching during operation. Thus, the
ability to increase speed and operating performance is
facilitated.
[0080] Furthermore, owing to the ability to provide both burst and
pipelined EDO modes of operation for memory 100, this disclosure
facilitates many additional embodiments, some of which are
described below.
[0081] Referring now to FIG. 13, there is shown a timing diagram
illustrative of burst EDO write cycles for a row-based switching
embodiment in accordance with various embodiments. For row-based
switching, either /OE signal 118 or /WE signal 117 may be used for
mode select. For example, either /OE signal 118 or /WE signal 117
may be provided to mode circuitry 138 (shown in FIG. 11). Mode
circuitry 138 (shown in FIG. 11) may be set by either /OE signal
118 or /WE signal 117 when /RAS signal 112 is active. Thus, any
need for an external mode select control signal is eliminated. Mode
circuitry 138 (shown in FIG. 11) may be set for the duration of a
current row access (page mode access), and /OE signal 118 and /WE
signal 117 retain their functionality for one or more column
accesses on the current row.
[0082] /RAS signal 112 transitions to active low at time 175. At
which time, /OE signal 118 is active low for selecting burst EDO
mode, and /OE signal 118 is a "don't care" condition for the
remainder of /RAS signal 112 for the current write cycles. (e.g.,
/CAS cycles 180 through 183, inclusive).
[0083] At time 175, ADDR signal 115 has provided row address 176.
Row address 176 indicates which row in memory array 111 (shown in
FIG. 9) is to be accessed. Thus, row address 176 is latched by
transition of /RAS signal 112 from high to low at time 175.
[0084] At time 177, /CAS signal 114 transitions to active low. At
which time, /WE signal 117 is active low. Consequently, memory 100
(shown in FIG. 9) is instructed to write information to memory
array 111 (also shown in FIG. 9). Also, at time 177, ADDR signal
115 provides an initial external column address (COL b) 178.
Address 178 indicates a location on row 176 in which writing of
information is to begin. Accordingly, data (DIN b) 179 from DQ
signal 116 is input to memory 100 (shown in FIG. 9).
[0085] Column address 178 is advanced on subsequent /CAS signal 114
cycles 181 through 183, inclusive (181-183). Accordingly, data (DIN
b+1, DIN b+2, and DIN b+3) 184 through 186, inclusive, is stored on
each cycle 181-183, respectively.
[0086] After the fourth memory access, a new external address 187
is applied via ADDR signal 115 for further inputting of information
to memory 100 (shown in FIG. 9) without any /CAS cycle latency.
[0087] Referring to FIG. 14, there is shown a timing diagram
illustrative of burst EDO read cycles for a row-based switching
embodiment in accordance with various embodiments. /RAS signal 112
transitions to active low at time 190. At which time, /OE signal
118 is active low for selecting burst EDO mode, and ADDR signal 115
has provided row address 191, namely a row in memory array 111
(shown in FIG. 9) to be accessed. Row address 191 is latched by
transition of /RAS signal 112 from high to low at time 190.
[0088] At time 192, /CAS signal 114 transitions to active low,
latching column address (COL b) 193. Address 193 is an externally
generated address provided to memory 100 (shown in FIG. 9) via ADDR
signal 115. As /WE signal 117 is high (inactive) at time 192,
memory 100 (shown in FIG. 9) is instructed to read information from
memory array 111 (also shown in FIG. 9). After /CAS cycle 194, an
additional /CAS cycle takes place, namely /CAS cycle 195, for a two
/CAS signal 114 cycle latency (cycles 194 and 195). Notably, for
continued, successive bursting, only the initial two /CAS cycle
latency is incurred.
[0089] By time 200, the beginning of the third /CAS cycle (/CAS
cycle 196), data (DOUT b) 201 from row 191, column 193 is valid.
DOUTb is outputted a tCAC (access time from /CAS) from the
beginning of the second CAS cycle 195, and is outputted along DQ
signal 116. After cycle 194, on each following /CAS cycle 195
through 197, inclusive, an internal address is generated for
outputting data (DOUT b+1, b+2, and b+3) 202, 203, and 204,
respectively, on DQ signal 116. Meanwhile at time 205, a new
external column address 206 is latched by transition of /CAS signal
114 from high to low.
[0090] Referring to FIG. 15, there is shown a timing diagram
illustrative of pipelined EDO write cycles for a row-based
switching embodiment in accordance with various embodiments. /RAS
signal 112 transitions to active low at time 210, latching row
address 211. As /OE signal 118 is high at time 210, pipelined mode
is selected. As /WE signal 117 is low at time 216, memory 100
(shown in FIG. 9) is instructed to write information to memory
array 111 (shown in FIG. 9).
[0091] At time 216, /CAS 114 transitions from high to low to begin
/CAS cycle 2 12. This transition causes row address 211 and
external column address (COL b) 2 17 to be accessed for writing
data (DIN b) 221 from DQ signal 116 to memory array 111 (shown in
FIG. 9). On the next and following /CAS cycles (e.g., /CAS cycles
213, 214, 215, a random or patternless series of external column
addresses (e.g., external column addresses 218, 219, 220) may be
received for writing data (e.g., DIN e, w, y) from DQ signal 116 to
memory 100 (shown in FIG. 9). Receiving of external addresses may
continue thereafter without any /CAS cycle latency.
[0092] Referring now to FIG. 16, there is shown a timing diagram
illustrative of pipelined EDO read cycles for a row-based switching
embodiment in accordance with various embodiments. At time 225,
/RAS signal 112 transitions to active low, and row address 226 is
latched from ADDR signal 115. Also, at time 225, /OE signal 118 is
high, and thus pipelined mode is selected. At time 227, /WE signal
117 is high, and thus memory 100 (shown in FIG. 9) is instructed to
read from memory array 111 (also shown in FIG. 9).
[0093] At time 227, /CAS signal 114 begins cycling, and
consequently external column address (COL b) 234 may be provided to
MUX 123 (shown in FIG. 9). Moreover, a new external column address
(e.g., COL e, w, y, n, d, m) may be provided to MUX 123 (shown in
FIG. 9) on each subsequent /CAS cycle 229 through 233, inclusive.
However, there is a two /CAS cycle latency, namely /CAS cycles 228,
229, from time 227 when external column address 234 is received and
reading or outputting data (DOUT b) 235 associated with address 234
onto signal DQ 116.
[0094] While this row-based switching embodiment has been
illustratively shown having four /CAS cycles prior to initiation of
receipt of a new external address while in burst EDO mode, it will
be appreciated by those of ordinary skill in the art that fewer or
more /CAS cycles may be used. Furthermore, while data out was
incrementally increased (i.e., b, b+1, etc.) for purposes of
illustration of burst EDO write and read operations, it will be
appreciated by those of ordinary skill in the art that an
interleaved or another patterned, internally generated addressing
scheme may be employed. Also, /WE signal 117 was not used for mode
selection in this example; however, it will be readily appreciated
to those of ordinary skill in the art that /WE signal 117 may be
used instead of /OE signal 118 for mode selection.
[0095] As mentioned above, embodiments of the invention facilitate
many applications in addition to row-based switching. By way of
example and not limitation, some other possible embodiments are
described herein.
[0096] In column-based switching, switching between burst EDO and
pipelined EDO modes is accomplished on successive /CAS cycles.
Moreover, this type of switching may be accomplished on either read
or write cycles, e.g., from a burst EDO read cycle to a pipelined
EDO read cycle and vice-versa, or from a burst EDO write cycle to a
pipelined EDO write cycle and vice-versa.
[0097] For this embodiment, /OE signal 118 functionality must be
changed, as it is used to disable output drivers, to be used as an
input for mode selection (i.e., a signal equivalent to P/B 120).
For example, referring to FIG. 17, there is shown a timing diagram
for column-base switching in accordance with various embodiments.
When /OE signal 118 is low, memory 100 (shown in FIG. 9) operates
in burst mode 258, and when /OE signal 118 is high, memory 100
(shown in FIG. 9) operates in pipelined mode 259.
[0098] In application-based switching, a WCBR (write /CAS before
/RAS) program cycle following a memory 100 (shown in FIG. 9)
initialization routine may be applied to mode circuitry 138 (shown
in FIG. 11) to select a desired EDO mode. In such a case, memory
100 (shown in FIG. 9) remains in a selected EDO mode until powered
down or until another WCBR programming cycle is executed to change
the mode. This type of switching may be employed where a user
desires to use burst EDO mode for one or more applications and
pipelined EDO mode for one or more other applications. Moreover, an
additional external pin may be employed for providing /OE signal
118 to memory 100 (shown in FIG. 9).
[0099] In fixed access-based switching, burst address counter 149
(shown in FIG. 9) may be employed for read operations, and external
addressing may be employed for write operations. In other words,
burst EDO mode may be used for read operations, and pipelined EDO
mode may be used for write operations. In such a case, /WE signal
117 may be applied to mode circuitry 138 (shown in FIG. 11) such
that when /WE signal 117 is logic low, memory 100 is in pipelined
EDO mode, and when /WE signal 117 is logic high, memory 100 is in
burst EDO mode. This implementation requires no redefinition of
control signals.
[0100] Other types of switching include combinations of the above
examples. By way of example and not limitation, a fixed
burst-read/pipelined-write operation could be combined with a WCBR
programming cycle (like that described in application-based
switching) to allow either fixed access-based switching or
row-based switching.
[0101] Referring now to FIG. 18, there is shown a top elevation
view of a pinout diagram of an memory (DRAM) 240 in accordance with
various embodiments. DRAM 240 has a standard pinout, except for pin
241 (i.e., pin number eight). Pin 241 has been changed from a NC
(no connect) pin, as shown in FIG. 3, to a P/B control signal 120
(shown in FIG. 9) pin for selecting between burst EDO and pipelined
EDO modes of operation. As mentioned elsewhere herein, an external
control signal for mode selection between burst EDO and pipelined
EDO need not be present. In such a case, logic internal to DRAM 240
is employed for selecting between two modes, and thus the pinout of
such a DRAM would be the same as that shown in FIG. 3.
[0102] Referring to FIG. 19, there is shown a block diagram of a
memory module (SIMM) 250 in accordance with various embodiments.
SIMM 250 is similar to that shown FIG. 6, except that P/B control
signal 120 is applied to a pin on each DRAM 242 through 245,
inclusive. DRAMs 242 through 245 are similar to that of FIG. 17. Of
course, if DRAMs 242 through 245 had internal logic for mode
selection, no additional providing of P/B signal 120 (shown in FIG.
9) would be necessary. In which case, SIMM 250 may be like that of
FIG. 6.
[0103] Referring to FIG. 20, there is shown system 255 in
accordance with various embodiments. As illustratively shown,
microprocessor 251 is coupled to memory 100, as well as system
clock 253. Notably system clock 253 is not directly coupled to
memory 100, but is coupled through microprocessor 251.
[0104] In this Detailed Description, reference is made to specific
examples by way of drawings and illustrations. These examples are
described in sufficient detail to enable those skilled in the art
to practice the inventive subject matter, and serve to illustrate
how the inventive subject matter may be applied to various purposes
or embodiments. Other embodiments are included within the inventive
subject matter, as logical, mechanical, electrical, and other
changes may be made to the example embodiments described herein.
Features or limitations of various embodiments described herein do
not limit the inventive subject matter as a whole, and any
reference to the invention, its elements, operation, and
application are not limiting as a whole, but serve only to define
these example embodiments.
[0105] Such embodiments of the inventive subject matter may be
referred to herein individually or collectively by the term
"invention" merely for convenience and without intending to
voluntarily limit the scope of this application to any single
invention or inventive concept, if more than one is in fact
disclosed. Thus, although specific embodiments have been
illustrated and described herein, any arrangement calculated to
achieve the same purpose may be substituted for the specific
embodiments shown. This disclosure is intended to cover any and all
adaptations or variations of various embodiments. Combinations of
the above embodiments, and other embodiments not specifically
described herein, will be apparent to those of skill in the art
upon reviewing the above description.
[0106] The Abstract of the Disclosure is provided to comply with 37
C.F.R. .sctn.1.72(b), requiring an abstract that will allow the
reader to quickly ascertain the nature of the technical disclosure.
It is submitted with the understanding that it will not be used to
interpret or limit the scope or meaning of the claims. In addition,
in the foregoing Detailed Description, it can be seen that various
features are grouped together in a single embodiment for the
purpose of streamlining the disclosure. This method of disclosure
is not to be interpreted to require more features than are
expressly recited in each claim. Rather, inventive subject matter
may be found in less than all features of a single disclosed
embodiment. Thus the following claims are hereby incorporated into
the Detailed Description, with each claim standing on its own as a
separate embodiment.
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