U.S. patent application number 11/356202 was filed with the patent office on 2007-08-23 for liquid crystal display device and defect repairing method for the same.
Invention is credited to Te Cheng Chung, Ming Tien Lin, Chang Ching Yeh.
Application Number | 20070194331 11/356202 |
Document ID | / |
Family ID | 38427295 |
Filed Date | 2007-08-23 |
United States Patent
Application |
20070194331 |
Kind Code |
A1 |
Yeh; Chang Ching ; et
al. |
August 23, 2007 |
Liquid crystal display device and defect repairing method for the
same
Abstract
A liquid crystal display device comprises a pixel electrode, a
thin film transistor, a gate line electrically coupled to the pixel
through the thin film transistor and a first auxiliary layer having
a first connecting portion overlapped with the pixel electrode and
a second connecting portion overlapped with the gate line, wherein
the pixel electrode is non-overlapped with the gate line and the
first auxiliary layer is electrically insulated from the pixel
electrode and the gate line. When a white defect occurs, the pixel
electrode is electrically connected to the gate line through the
first auxiliary layer thereby repairing the white defect as a black
defect.
Inventors: |
Yeh; Chang Ching; (Magong
City, TW) ; Chung; Te Cheng; (Jhongli City, TW)
; Lin; Ming Tien; (Lujhou City, TW) |
Correspondence
Address: |
LOWE HAUPTMAN BERNER, LLP
1700 DIAGONAL ROAD
SUITE 300
ALEXANDRIA
VA
22314
US
|
Family ID: |
38427295 |
Appl. No.: |
11/356202 |
Filed: |
February 17, 2006 |
Current U.S.
Class: |
257/88 |
Current CPC
Class: |
G02F 1/136259 20130101;
G02F 1/136272 20210101; G02F 1/136268 20210101 |
Class at
Publication: |
257/088 |
International
Class: |
H01L 33/00 20060101
H01L033/00 |
Claims
1. A liquid crystal display device, comprising: a first gate line
for transmitting a first scan signal; a second gate line next to
the first gate line; a pixel electrode formed without overlapping
with the first gate line and the second gate line; a thin film
transistor having a first electrode electrically connected to the
pixel electrode, a second electrode for receiving a data signal,
and a gate electrode for receiving the first scan signal; and a
first auxiliary layer having a first connecting portion overlapped
with the pixel electrode and a second connecting portion overlapped
with one of the first gate line and the second gate line; wherein
the first auxiliary layer is electrically insulated from the pixel
electrode, the first gate line and the second gate line.
2. The liquid crystal display device as claimed in claim 1, wherein
the pixel electrode is located between the first gate line and the
second gate line.
3. The liquid crystal display device as claimed in claim 1, wherein
the first auxiliary layer, the first electrode and the second
electrode are formed by same manufacturing processes.
4. The liquid crystal display device as claimed in claim 1, further
comprising: a second auxiliary layer overlapped with and
electrically insulated from the first connecting portion of the
first auxiliary layer.
5. The liquid crystal display device as claimed in claim 4, wherein
the second auxiliary layer, the first gate line and the second gate
line are formed by same manufacturing processes.
6. The liquid crystal display device as claimed in claim 4, wherein
the second auxiliary layer is electrically isolated from the first
and second gate lines and electrically insulated from the pixel
electrode.
7. The liquid crystal display device as claimed in claim 1, further
comprising: a gate insulating layer covering the first and second
gate lines, wherein the first electrode, the second electrode and
the first auxiliary layer are formed on the gate insulating layer;
and a protective layer covering the first electrode, the second
electrode and the first auxiliary layer, wherein the pixel
electrode is formed on the protective layer.
8. The liquid crystal display device as claimed in claim 7, further
comprising: a semiconductor layer formed on the gate insulating
layer, wherein a part of the first electrode and a part of the
second electrode are formed on the semiconductor layer.
9. A defect repairing method, applied to the liquid crystal display
device of claim 1 while the pixel electrode is defective,
comprising: connecting the first connecting portion of the first
auxiliary layer with the pixel electrode; and connecting the second
connecting portion of the first auxiliary layer with the one of the
first gate line and the second gate line.
10. The defect repairing method as claimed in claim 9, further
comprising: making the pixel electrode electrically isolated from
the thin film transistor.
11. The defect repairing method as claimed in claim 10, wherein the
making step is implemented by cutting off the electrical path
between the pixel electrode and the thin film transistor.
12. The defect repairing method as claimed in claim 9, wherein the
two connecting steps are implemented by a laser.
13. The defect repairing method as claimed in claim 9, wherein the
liquid crystal display device further comprises a second auxiliary
layer overlapped with the first connecting portion of the first
auxiliary layer, and wherein the step of connecting the first
connecting portion of the first auxiliary layer with the pixel
electrode further comprises: connecting the first connecting
portion of the first auxiliary layer with the second auxiliary
layer.
14. The defect repairing method as claimed in claim 13, wherein the
connecting steps are implemented by a laser.
15. A pixel repairing structure for a liquid crystal display device
having a first gate line and a pixel electrode adjacent to the
first gate line, comprising: a first auxiliary layer having a first
portion overlapped with the pixel electrode and a second portion
overlapped with the first gate line; and a second auxiliary layer
overlapped with the first portion of the first auxiliary layer;
wherein the first auxiliary layer is electrically insulated from
the pixel electrode, the first gate line and the second auxiliary
layer.
16. The pixel repairing structure as claimed in claim 15, further
comprising: a second gate line next to the first gate line such
that the pixel electrode is located between the first gate line and
the second gate line.
17. The pixel repairing structure as claimed in claim 16, wherein
the second auxiliary layer is electrically isolated from the first
and second gate lines and electrically insulated from the pixel
electrode.
18. The pixel repairing structure as claimed in claim 16, wherein
the second auxiliary layer, the first gate line and the second gate
line are formed by same manufacturing processes.
19. The pixel repairing structure as claimed in claim 15, wherein
the second auxiliary layer is electrically isolated from the first
gate line and electrically insulated from the pixel electrode.
20. The pixel repairing structure as claimed in claim 15, further
comprising: a gate insulating layer covering the first gate line
and the second auxiliary layer, wherein the first auxiliary layer
is formed on the gate insulating layer; and a protective layer
covering the first auxiliary layer, wherein the pixel electrode is
formed on the protective layer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] This invention generally relates to a liquid crystal display
device, and more particularly to a liquid crystal display device
having a pixel repairing structure.
[0003] 2. Description of the Related Art
[0004] In the manufacturing process of a liquid crystal display
(LCD) device, pixel defects are liable to be generated and should
be repaired, which causes the manufacturing cost inevitably to be
increased. Typically, the pixel defects are divided into white
defects and dark defects, wherein the white defects are easily
recognized by naked eyes. Therefore, it is preferable that the
white defects should be repaired as black defects, which are always
dark and not easily recognized by naked eyes.
[0005] One of conventional methods for repairing a white defect as
a dark defect is widely used in an LCD device 10 as shown in FIG.
1, in which a pixel electrode 12a has at least one part 13
overlapped with a gate line 14 to form a storage capacitor for
enhancing the charge storing capacity between the pixel electrode
12a and a common electrode (not shown). When a white defect is
caused by poor contact between the pixel electrode 12a and a
switching element 16 or by malfunction of the switching element 16,
a short circuit is formed between the part 13 of the pixel
electrode 12a and the gate line 14 through a welding point 20
formed by a laser such that the white defect can be repaired as a
dark defect. U.S. Pat. No. 6,882,375 B2 issued to Kim on Apr. 19,
2005 discloses that a pixel electrode has a repair member
overlapped with a neighboring front gate line.
[0006] In addition, some of conventional methods for repairing a
white defect as a dark defect are used in an LCD device (not
shown), in which a pixel electrode is overlapped with a storage
line (also referred to as storage capacitor line) to form a storage
capacitor.
[0007] U.S. Pat. No. 6,855,955 B2 issued to Jeon et al.
(hereinafter Jeon) on Feb. 15, 2005 discloses that a pixel
electrode is electrically connected to a storage capacitor
conductor through a contact hole, wherein the storage capacitor
conductor has a repairing portion overlapped with the gate line.
When a white defect occurs, the gate line is short-circuited with
the pixel electrode through the repair portion such that the white
defect can be repaired as a dark defect.
[0008] However, in the above-mentioned conventional methods, at
least one connecting portion (e.g. the part 13 in FIG. 1, the
repair member disclosed by Kim and the repairing portion disclosed
by Jeon) electrically connected to the pixel electrode is
overlapped with the gate line such that a capacitor is formed
between the connecting portion and the gate line and thus increases
the capacitive load on the gate line. In particular, when the
number of pixels along the gate line is large, the capacitive load
of the gate line may become considerable and thus cause the delay
of the scan signal transmitted in the gate line.
SUMMARY OF THE INVENTION
[0009] The present invention provides a liquid crystal display
device, which comprises a thin film transistor and a first
auxiliary layer having a first portion overlapped with a pixel
electrode and a second portion overlapped with a gate line, wherein
the pixel electrode is non-overlapped with the gate line and the
first auxiliary layer is electrically insulated from the pixel
electrode and the gate line.
[0010] The present invention further provides a defect repairing
method, which is applied to the above-mentioned liquid crystal
display device, wherein the defect repairing method comprises a
step of making the pixel electrode electrically isolated from the
thin film transistor, a step of connecting the first portion of the
first auxiliary layer with the pixel electrode and a step of
connecting the second portion of the first auxiliary layer with the
gate line.
[0011] Furthermore, a second auxiliary layer is overlapped with the
first portion of the first auxiliary layer thereby facilitating the
electrical connection between the first portion and the pixel
electrode.
[0012] According to the defect repairing method of the present
invention, the pixel electrode can be electrically connected to the
gate line through the first auxiliary layer thereby repairing a
white defect as a black defect without signal delay problem caused
by the capacitive load of the gate line.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Other objects, advantages, and novel features of the present
invention will become more apparent from the following detailed
description when taken in conjunction with the accompanying
drawings.
[0014] FIG. 1 shows a partial plan view of a conventional liquid
crystal display device.
[0015] FIG. 2 shows a partial plan view of a liquid crystal display
device according to one embodiment of the present invention.
[0016] FIG. 3 shows a cross-sectional view taken along line A-A of
FIG. 2 for illustrating the thin film transistor.
[0017] FIG. 4 shows a cross-sectional view taken along line B-B of
FIG. 2 for illustrating the pixel repairing structure.
[0018] FIG. 5 shows a cross-sectional view taken along line A-A of
FIG. 2 for illustrating the thin film transistor with its drain
electrode and source electrode being cut off by a laser.
[0019] FIG. 6 shows a cross-sectional view taken along line B-B of
FIG. 2 for illustrating the pixel repairing structure, which has
two welding points formed by a laser.
[0020] FIGS. 7A-7D are cross-sectional views for illustrating the
method for making the pixel repairing structure shown in FIG.
4.
[0021] FIG. 8 shows a partial plan view of a liquid crystal display
device according to another embodiment of the present
invention.
[0022] FIG. 9 shows an equivalent circuit of the liquid crystal
display devices shown in FIGS. 2 and 8.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0023] FIG. 2 shows a partial plan view of a liquid crystal display
device 100 according to one embodiment of the present invention.
The liquid crystal display device 100 comprises a plurality of
pixel regions 102, a plurality of data lines 104, a plurality of
gate lines 106, a plurality of storage capacitor lines 107, and a
plurality of thin film transistors 108. In FIG. 2, the gate lines
106 and storage capacitor lines 107 are denoted by the dotted lines
and formed on a substrate (not shown).
[0024] The plurality of pixel regions 102 are arranged in rows and
columns to form a matrix, and each pixel region 102 has a pixel
electrode 110 and a pixel repairing structure 111 formed thereon.
The data line 104 is electrically coupled, through all the thin
film transistors 108 at the same column, to all the pixel
electrodes 110 of the pixel regions 102 arranged in the same
column. The gate line 106 is electrically coupled, through all the
thin film transistors 108 in the same row, to all the pixel
electrodes 110 of the pixel regions 102 arranged in the same row.
The storage capacitor line 107 is formed across the pixel regions
102 arranged in a row and overlapped with the pixel electrodes 110
to form a storage capacitor for enhancing the charge storing
capacity between the pixel electrode 110 and a common electrode
formed on a counter substrate (not shown) facing the
above-mentioned substrate. In the other word, the storage capacitor
line 107 is electrically insulated from the pixel electrodes 110
and data lines 104. The thin film transistor 108 is formed close to
the intersection of the data line 104 and the gate line 106. The
thin film transistor 108 has a source electrode 108a electrically
connected to the data line 104, a drain electrode 108b electrically
connected to the pixel electrode 110 through a contact hole 109. In
this embodiment, the source electrode 108a and the drain electrode
108b are partially overlapped with a section 106a of the gate line
106 so that the section 106a of the gate line 106 can function as a
gate electrode of the thin film transistor 108. In addition, it
should be noted that the terms "source electrode" and "drain
electrode" could be alternatively used in accordance with the
direction of the current flow in the thin film transistor 108.
[0025] FIG. 3 shows a cross-sectional view taken along line A-A of
FIG. 2 for illustrating the thin film transistor 108. The thin film
transistor 108 has the gate electrode, i.e. the section 106a of the
gate line 106, formed on a substrate 112. A gate insulating layer
114 is formed to cover the section 106a of the gate line 106. A
semiconductor layer 116 is formed on the gate insulating layer 114
and overlapped with the section 106a of the gate line 106. The
source electrode 108a and the drain electrode 108b are formed on
the gate insulating layer 114 with parts of them covering the
semiconductor layer 116. A protective layer 118 is formed on the
gate insulating layer 114 to cover the source electrode 108a, the
drain electrode 108b, and parts of the semiconductor layer 116. The
pixel electrode 110 is formed on the protective layer 118 and
electrically connected to the drain electrode 108b through the
contact hole 109 formed in the protective layer 118.
[0026] Referring to FIG. 3, the thin film transistor 108 has a
predetermined channel formed between the source electrode 108a and
the drain electrode 108b on the semiconductor layer 116. When the
gate line 106 receives a scan signal, it transmits the scan signal
to the section 106a, i.e. the gate electrode of the thin film
transistor 108, for switching on/off the predetermined channel of
the thin film transistor 108. In addition, when the section 106a of
the gate line 106 is applied with the scan signal, the source
electrode 108a can receive a data signal from the data line 104 and
then transfer the data signal to the drain electrode 108b through
the predetermined channel. Afterward, the data signal can be
applied to the pixel electrode 110 by the drain electrode 108b such
that a potential difference can be generated between the pixel
electrode 110 and the common electrode formed on the counter
substrate (not shown) facing the substrate 112 for rotating the
liquid crystal (not shown) within a pixel cell, and then form a
desired picture. The pixel cell described in this embodiment is the
basic unit to form a color, e.g. one of the red, green and
blue.
[0027] FIG. 4 shows a cross-sectional view taken along line B-B of
FIG. 2 for illustrating the pixel repairing structure 111. In this
embodiment, the pixel repairing structure 111 is formed to repair a
defective pixel and includes a first auxiliary layer 120 and a
second auxiliary layer 122. The first auxiliary layer 120 is formed
on the gate insulating layer 114 and covered with the protective
layer 118 such that it can be electrically insulated from the gate
line 106, the second auxiliary layer 122 and the pixel electrode
110. The first auxiliary layer 120 has a connecting portion 120a
overlapped with the gate line 106, and a connecting portion 120b
overlapped with the pixel electrode 110. The second auxiliary layer
122 as a dummy layer is formed on the substrate 112, electrically
isolated from the gate line 106, and covered with the gate
insulating layer 114. In more detail, the second auxiliary layer
122 is overlapped with the connecting portion 120b of the first
auxiliary layer 120 and electrically insulated from the first
auxiliary layer 120 and the pixel electrode 110. In the other word,
the second auxiliary layer 122 is an electrically insulated island.
Furthermore, in normal pixel regions 102, the pixel repairing
structure 111 is electrically insulated with surroundings, such as
the gate lines 106, the data lines 104, the thin film transistors
108, the pixel electrodes 110 and the storage capacitor lines
107.
[0028] Now referring to FIGS. 2 to 4, if a defect occurs at the
predetermined channel in one of the thin film transistors 108, e.g.
the thin film transistor also denoted by the numeral 208 shown in
FIG. 2, then the pixel electrode 210 electrically connected to the
thin film transistor 208 is defective, so that the pixel cell
formed by the pixel electrode 210 becomes a bright dot, i.e. a
white defect. The defect repairing method of the present invention
for repairing such a defective pixel cell will be described
below.
[0029] In this embodiment, it is assumed that the pixel electrode
also denoted by the numeral 210 is found defective and causes a
bright dot. In order to repair the white defect, firstly, the
electrical path between the pixel electrode 210 and the drain
electrode 108b of the thin film transistor 208 should be cut off
such that the pixel electrode 210 can be electrically isolated from
the drain electrode 108b. The electrical path can be cut by using a
laser to cut off the connecting part 113 of the drain electrode
108b and the connecting part 115 of the source electrode 108a as
shown in FIG. 5, such that the pixel electrode 210 is electrically
isolated from the thin film transistor 208.
[0030] Now referring to FIGS. 2 and 4, after the above cutting step
is implemented, an electrical path between the pixel electrode 210
and the gate line 106 is then created such that the pixel electrode
210 can be repaired as a dark dot, i.e. black defect. The
electrical path can be created by using the laser to form two
welding points 124a and 124b in the pixel repairing structure 111
as shown in FIG. 6. The welding point 124a is formed by welding the
connecting portion 120a of the first auxiliary layer 120 with the
gate line 106. The welding point 124b could be formed by two
methods: one is to weld the connecting portion 120b of the first
auxiliary layer 120 with the pixel electrode 210, and the other is
further to weld the second auxiliary layer 122 with the connecting
portion 120b and the pixel electrode 210 for facilitating the
electrical connection between the connecting portion 120b and the
pixel electrode 210. When the two welding points 124a and 124b are
formed by the laser, the pixel electrode 210 can be electrically
connected to the gate line 106 through the first auxiliary layer
120. Accordingly, the pixel electrode 210 can be applied with a
potential generated from the gate line 106 so that the defective
pixel cell can be repaired and displayed as a dark dot.
[0031] FIGS. 7A-7D are cross-sectional views for illustrating the
method for making the pixel repairing structure 111 shown in FIG.
4. A method for making the liquid crystal display device 100 will
be described below with reference to FIGS. 2, 3 and 7A-7D.
[0032] Referring to FIGS. 2, 3 and 7A, a gate line 106, a gate line
section 106a, a storage capacitor line 107 and a second auxiliary
layer 122 are formed on a substrate 112. The gate line 106, the
gate line section 106a, the storage capacitor line 107 and the
second auxiliary layer 122 are formed by depositing at least one
metal layer, e.g. aluminum (Al), copper (Cu), chromium (Cr), silver
(Ag), gold (Au), molybdenum (Mo) or any other metal layer or any
stacked metal layer, through a sputtering technique or other
techniques, and then patterning it with a first mask.
[0033] Referring to FIGS. 2, 3 and 7B, a gate insulating layer 114
is formed on the substrate 112 to cover the gate line 106, the gate
line section 106a, the storage capacitor line 107 and the second
auxiliary layer 122. The gate insulating layer 114 can be formed of
at least one insulating material, e.g. silicon nitride (SiNx),
silicon oxide (SiOx), or stacked thereof or any other such material
or any other transparent material. Afterward, a semiconductor layer
116 is formed on the gate insulating layer 114 and overlapped with
the gate line section 106a. The semiconductor layer 116 is formed
by depositing a semiconductor material, e.g. amorphous silicon, on
the gate insulating layer 114 and then patterning it with a second
mask.
[0034] Referring to FIGS. 2, 3 and 7C, a data line 104, a source
electrode 108aconnected to the data line 104, a drain electrode
108b and a first auxiliary layer 120 are formed on the gate
insulating layer 114. Further, the source electrode 108a and the
drain electrode 108b are formed on the gate insulating layer 114
with parts of them covering the semiconductor layer 116. The data
line 104, the source electrode 108a, the drain electrode 108b and
the first auxiliary layer 120 are formed by entirely depositing at
least one metal layer, e.g. magnesium (Mg), calcium (Ca), aluminum
(Al), Barium (Ba), lithium (Li), silver (Ag), gold (Au) or any
other metal layer or any stacked metal layer, through a CVD
technique or a sputtering technique, and then patterning it with a
third mask. Afterward, a protective layer 118 is formed on the gate
insulating layer 114 to cover the data line 104, the source
electrode 108a, the drain electrode 108b, parts of the
semiconductor layer 116 and the first auxiliary layer 120.
[0035] Referring to FIGS. 2 and 3, the protective layer 118 is
patterned with a fourth mask to form a contact hole 109 such that a
part of the drain electrode 108b is exposed from the contact hole
109.
[0036] Referring to FIGS. 2, 3 and 7D, a pixel electrode 110 is
formed on the protective layer 118 without overlapping with the
gate line 106. In addition, the pixel electrode 110 is further
formed into the contact hole 109 so as to be electrically connected
to the drain electrode 108b. The pixel electrode 110 is formed by
depositing at least one transparent conductive material, e.g.
indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (10),
tin oxide (TO), zinc oxide (ZO), aluminum zinc oxide (AZO) or any
other transparent conductive layer or any stacked conductive layer,
on the protective layer 118, and then patterning it with a fifth
mask.
[0037] According to the method for making the liquid crystal
display device 100, the pixel repairing structure 111, together
with the thin film transistor 108, is formed using the same masks
and patterning processes. For example, the second auxiliary layer
122, together with the gate line 106, is formed on the substrate
112 through the same mask, i.e. the first mask, and the same
patterning process. In addition, the first auxiliary layer 120,
together with the data line 104, the source electrode 108a and the
drain electrode 108b, is formed on the gate insulating layer 114
through the same mask, i.e. the third mask, and the same patterning
process. Therefore, the pixel repairing structure 111 can be formed
without using any additional mask and patterning process.
[0038] In the pixel repairing structure 111 shown in FIG. 4, the
second auxiliary layer 122 is formed to facilitate the formation of
the welding point 124b shown in FIG. 6 for the electrical
connection between the connecting portion 120b and the pixel
electrode 110. Therefore, it should be understood that the second
auxiliary layer 122 can be optionally formed in the liquid crystal
display device 100.
[0039] FIG. 8 shows a partial plan view of a liquid crystal display
device 200 according to another embodiment of the present
invention. In FIG. 8, elements having the same functions as in the
embodiment of FIG. 2 are denoted by the same numerals. The liquid
crystal display device 200 is substantially the same with the
liquid crystal display device 100 shown in FIG. 2 except that a
first auxiliary layer 220 and a second auxiliary layer 222 are
formed at the bottom edge of the pixel electrode 210 rather than
the top edge of the pixel electrode 210 at which the first
auxiliary layer 120 and the second auxiliary layer 122 shown in
FIG. 2 are formed. In the other word, the first auxiliary layer 220
and the thin film transistor 108, 208 are overlapping the same
pixel electrode 110, 210 and the gate line 106. In addition, the
first auxiliary layer 220 has a connecting portion 220a overlapped
with the gate line 106, which is coupled to the pixel electrode
110, 210 through the thin film transistor 208. The first auxiliary
layer 220 further has a connecting portion 220b overlapped with the
pixel electrode 110, 210 and the second auxiliary layer 222.
Similarly, when a white defect occurs, the electrical path between
the pixel electrode 210 and the drain electrode 108b of the thin
film transistor 208 should be firstly cut off by a laser such that
the pixel electrode 210 is made electrically isolated from the thin
film transistor 208. Secondly, the pixel electrode 210 can be
electrically connected to the gate line 106 by welding the
connecting portion 220a of the first auxiliary layer 220 with the
gate line 106, and welding the connecting portion 220b of the first
auxiliary layer 220 with the pixel electrode 210 or welding the
connecting portion 220b of the first auxiliary layer 220 with the
pixel electrode 210 and the second auxiliary layer 222. Therefore,
the white defect can be repaired as a black defect.
[0040] FIG. 9 shows an equivalent circuit of the liquid crystal
display device shown in FIGS. 2 and 8. As shown in FIG. 9, the thin
film transistor 108 has a capacitor Cgs formed between the gate
electrode 106a and the source electrode 108a, and a capacitor Cgs
formed between the gate electrode 106a and the drain electrode
108b. A liquid crystal capacitor C.sub.Lc is formed between the
pixel electrode 110 and a common electrode (not shown) having a
common voltage Vcom. When the thin film transistor 108 is turned
on, a voltage received from the data line 104 can be transferred to
the pixel electrode 110 and then held in the liquid crystal
capacitor C.sub.LC transitionally. Therefore, the voltage held in
the liquid crystal capacitor C.sub.LC can be applied to the liquid
crystal (not shown). In addition, a storage capacitor Cst is also
formed between the pixel electrode 110 and the common electrode for
enhancing the charge storing capacity of the liquid crystal
capacitor C.sub.LC.
[0041] In the liquid crystal display devices 100 and 200 shown in
FIGS. 2 and 8, the pixel electrode 110 is formed without
overlapping with the two adjacent lines 106, that is, the pixel
electrode 110 is non-overlapped with the two adjacent gate lines
106. In addition, both of the first auxiliary layers 120 and 220
are electrically insulated from the pixel electrode 110, 210 and
the two adjacent gate lines 106. Therefore, each gate line 106 is
free of capacitive load caused by the pixel electrode 110, 210 or
any connecting portion electrically connected to the pixel
electrode 110, 210 as shown in FIG. 9 such that the scan signal
transmitted thereof will not be delayed.
[0042] Although the invention has been explained in relation to its
preferred embodiment, it is not used to limit the invention. It is
to be understood that many other possible modifications and
variations can be made by those skilled in the art without
departing from the spirit and scope of the invention as hereinafter
claimed.
* * * * *