U.S. patent application number 11/650515 was filed with the patent office on 2007-08-16 for sputtering targets and methods for fabricating sputtering targets having multiple materials.
This patent application is currently assigned to Heraeus Incorporated. Invention is credited to Wenjun Zhang.
Application Number | 20070189916 11/650515 |
Document ID | / |
Family ID | 39301096 |
Filed Date | 2007-08-16 |
United States Patent
Application |
20070189916 |
Kind Code |
A1 |
Zhang; Wenjun |
August 16, 2007 |
Sputtering targets and methods for fabricating sputtering targets
having multiple materials
Abstract
A sputter target comprises a plurality of materials. The
plurality of materials includes at least a first material and a
second material. The first material is comprised of cobalt (Co),
chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe). The
second material is comprised of carbon (C), a carbon (C)-containing
material, a carbide, a nitrogen (N)-containing material, a nitride,
a silicon (Si)-containing material, a silicide, an oxygen
(O)-containing material, an oxide, boron (B), a boron
(B)-containing material or a boride. The second material
constitutes a phase where the phase of the second material has an
average size between greater than 0 micron and 50 microns.
According to one aspect, the first material comprises at least 15
atomic percent or greater. Methods of fabricating sputter targets
by blending a plurality of materials are also disclosed.
Inventors: |
Zhang; Wenjun; (Windsor
Park, CN) |
Correspondence
Address: |
MCDERMOTT WILL & EMERY LLP
18191 VON KARMAN AVE.
SUITE 500
IRVINE
CA
92612-7108
US
|
Assignee: |
Heraeus Incorporated
Chandler
AZ
|
Family ID: |
39301096 |
Appl. No.: |
11/650515 |
Filed: |
January 8, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10739401 |
Dec 19, 2003 |
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11650515 |
Jan 8, 2007 |
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10200590 |
Jul 23, 2002 |
6759005 |
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10739401 |
Dec 19, 2003 |
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Current U.S.
Class: |
419/66 ;
420/436 |
Current CPC
Class: |
C22C 27/06 20130101;
B22F 2998/10 20130101; C22C 38/002 20130101; C22C 32/0026 20130101;
C22C 38/06 20130101; C22C 38/10 20130101; C22C 5/04 20130101; C22C
38/02 20130101; C23C 14/3414 20130101; C22C 19/007 20130101; C22C
19/03 20130101; B22F 9/04 20130101; B22F 1/0003 20130101; B22F
2998/10 20130101; B22F 3/15 20130101; C22C 38/12 20130101; C22C
19/07 20130101 |
Class at
Publication: |
419/066 ;
420/436 |
International
Class: |
C22C 19/07 20060101
C22C019/07; B22F 3/02 20060101 B22F003/02 |
Claims
1. A sputter target comprising a plurality of materials, the
plurality of materials including at least a first material and a
second material, the first material comprised of cobalt (Co),
chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the
second material comprised of carbon (C), a carbon (C)-containing
material, a carbide, a nitrogen (N)-containing material, a nitride,
a silicon (Si)-containing material, or a silicide, the second
material constituting a phase, the phase of the second material
having an average size between greater than 0 micron and 50
microns, the first material comprising at least 15 atomic percent
or greater.
2. The sputter target of claim 1, wherein the carbide is a carbide
of one or more elements from the Periodic Table of elements shown
in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, and wherein the nitride is a nitride
of one or more elements from the Periodic Table of elements shown
in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB.
3. The sputter target of claim 1, wherein the nitrogen
(N)-containing material is a nitrogen (N)-containing material
including one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, wherein the carbon (C)-containing
material is a carbon (C)-containing material including one or more
elements from the Periodic Table of elements shown in Roman numeral
column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB
or IVB, wherein the silicon (Si)-containing material is a silicon
(Si)-containing material including one or more elements from the
Periodic Table of elements shown in Roman numeral column number
IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and
wherein the silicide is a silicide of one or more elements from the
Periodic Table of elements shown in Roman numeral column number
IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.
4. The sputter target of claim 1, wherein the second material is
comprised of the carbide or the nitride, wherein the carbide is a
carbide of one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, and wherein the nitride is a nitride
of one or more elements from the Periodic Table of elements shown
in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB.
5. The sputter target of claim 1, wherein the second material is
comprised of the silicide, wherein the silicide is a silicide of
one or more elements from the Periodic Table of elements shown in
Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA,
IB, IIB, IIIB or IVB.
6. The sputter target of claim 1, wherein the second material is
comprised of the nitride, wherein the nitride is a nitride of
aluminum (Al).
7. The sputter target of claim 1, wherein the phase of the second
material has an average size between 0.1 microns and 10
microns.
8. The sputter target of claim 1, wherein the phase of the second
material has an average size between 1 micron and 5 microns.
9. The sputter target of claim 1, wherein the phase of the second
material has an average size less than 2 microns.
10. The sputter target of claim 1, wherein the first material is
comprised of a cobalt (Co) element, a chromium (Cr) element, a
ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe)
element, a cobalt (Co) based master alloy, a chromium (Cr) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a chromium (Cr) based compound, a ruthenium (Ru)
based compound, a nickel (Ni) based compound, or an iron (Fe) based
compound.
11. The sputter target of claim 1, wherein the first material
constitutes a first phase, and the first phase of the first
material has an average size between greater than 0 micron and 50
microns.
12. The sputter target of claim 1, wherein the plurality of
materials includes a third material, the third material comprised
of platinum (Pt) or tantalum (Ta).
13. The sputter target of claim 1, wherein the plurality of
materials further includes a third material comprised of a
transition element, a refractory element, a cobalt-transition
element based master alloy, a cobalt-refractory element based
master alloy, a transition element based compound, or a refractory
element based compound.
14. The sputter target of claim 13, wherein the third material
constitutes a phase, and the phase of the third material has an
average size between greater than 0 micron and 50 microns.
15. The sputter target of claim 1, wherein the sputter target
comprises an alloy, the alloy including a plurality of phases, the
plurality of phases including at least a first phase and a second
phase, the first material constituting the first phase, the second
phase being the phase of the second material, the first material
comprised of a cobalt (Co) element, a chromium (Cr) element, a
ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe)
element, a cobalt (Co) based master alloy, a chromium (Cr) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a chromium (Cr) based compound, a ruthenium (Ru)
based compound, a nickel (Ni) based compound, or an iron (Fe) based
compound.
16. A sputter target comprising a plurality of materials, the
plurality of materials including at least a first material and a
second material, the first material comprised of cobalt (Co),
ruthenium (Ru), nickel (Ni), or iron (Fe), the second material
comprised of an oxygen (O)-containing material or an oxide, the
second material constituting a phase, the phase of the second
material having an average size between greater than 0 micron and
50 microns.
17. The sputter target of claim 16, wherein the oxide is an oxide
of one or more elements from the Periodic Table of elements shown
in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB.
18. The sputter target of claim 16, wherein the oxygen
(O)-containing material is an oxygen (O)-containing material
including one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB.
19. The sputter target of claim 16, wherein the oxide is an oxide
of one or more of transition or refractory elements.
20. The sputter target of claim 16, wherein the oxygen
(O)-containing material is an oxygen (O)-containing material
including one or more of transition or refractory elements.
21. The sputter target of claim 16, wherein the second material is
comprised of the oxide, wherein the oxide is an oxide of silicon
(Si), aluminum (Al) or titanium (Ti).
22. The sputter target of claim 16, wherein the second material is
comprised of the oxide, wherein the oxide is silicon dioxide
(SiO.sub.2).
23. The sputter target of claim 16, wherein the second material is
comprised of the oxide, wherein the oxide is titanium oxide
(TiO.sub.2).
24. The sputter target of claim 16, wherein the phase of the second
material has an average size between 0.1 microns and 10
microns.
25. The sputter target of claim 16, wherein the phase of the second
material has an average size between 1 micron and 5 microns.
26. The sputter target of claim 16, wherein the phase of the second
material has an average size less than 2 microns.
27. The sputter target of claim 16, wherein the first material is
comprised of a cobalt (Co) element, a ruthenium (Ru) element, a
nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a ruthenium (Ru) based compound, a nickel (Ni)
based compound, or an iron (Fe) based compound.
28. The sputter target of claim 16, wherein the first material
constitutes a first phase, and the first phase of the first
material has an average size between greater than 0 micron and 50
microns.
29. The sputter target of claim 16, wherein the plurality of
materials includes a third material, the third material comprised
of platinum (Pt) or tantalum (Ta).
30. The sputter target of claim 16, wherein the plurality of
materials further includes a third material comprised of a
transition element, a refractory element, a cobalt-transition
element based master alloy, a cobalt-refractory element based
master alloy, a transition element based compound, or a refractory
element based compound.
31. The sputter target of claim 30, wherein the third material
constitutes a phase, and the phase of the third material has an
average size between greater than 0 micron and 50 microns.
32. The sputter target of claim 16, wherein the sputter target
comprises an alloy, the alloy including a plurality of phases, the
plurality of phases including at least a first phase and a second
phase, the first material constituting the first phase, the second
phase being the phase of the second material, the first material
comprised of a cobalt (Co) element, a ruthenium (Ru) element, a
nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a ruthenium (Ru) based compound, a nickel (Ni)
based compound, or an iron (Fe) based compound.
33. The sputter target of claim 16, wherein the sputter target is
comprised of Co, Cr, Pt and SiO.sub.2.
34. The sputter target of claim 16, wherein the first material
comprises at least 15 atomic percent or greater.
35. A sputter target comprising a plurality of materials, the
plurality of materials including at least a first material and a
second material, the first material comprised of cobalt (Co),
chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the
second material comprised of an oxygen (O)-containing material or
an oxide, the second material constituting a phase, the phase of
the second material having an average size between greater than 0
micron and 50 microns, wherein if the sputter target consists of
chromium (Cr) and the oxygen (O)-containing material only, the
oxygen (O)-containing material is an oxygen (O)-containing material
other than simply chromium oxide, and wherein if the sputter target
consists of chromium (Cr) and the oxide only, the oxide is an oxide
other than simply chromium oxide.
36. The sputter target of claim 35, wherein the oxygen
(O)-containing material is an oxygen (O)-containing material
including one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, and wherein the oxide is an oxide of
one or more elements from the Periodic Table of elements shown in
Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA,
IB, IIB, IIIB or IVB.
37. The sputter target of claim 35, wherein the oxide is an oxide
of one or more of transition or refractory elements, and wherein
the oxygen (O)-containing material is an oxygen (O)-containing
material including one or more of transition or refractory
elements.
38. The sputter target of claim 35, wherein the second material is
comprised of the oxide, wherein the oxide is an oxide of silicon
(Si), aluminum (Al) or titanium (Ti).
39. The sputter target of claim 35, wherein the second material is
comprised of the oxide, wherein the oxide is silicon dioxide
(SiO.sub.2).
40. The sputter target of claim 35, wherein the second material is
comprised of the oxide, wherein the oxide is titanium oxide
(TiO.sub.2).
41. The sputter target of claim 35, wherein the phase of the second
material has an average size between 0.1 microns and 10
microns.
42. The sputter target of claim 35, wherein the phase of the second
material has an average size between 1 micron and 5 microns.
43. The sputter target of claim 35, wherein the phase of the second
material has an average size less than 2 microns.
44. The sputter target of claim 35, wherein the first material is
comprised of a cobalt (Co) element, a chromium (Cr) element, a
ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe)
element, a cobalt (Co) based master alloy, a chromium (Cr) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a chromium (Cr) based compound, a ruthenium (Ru)
based compound, a nickel (Ni) based compound, or an iron (Fe) based
compound, wherein the first material constitutes a first phase, and
the first phase of the first material has an average size between
greater than 0 micron and 50 microns.
45. The sputter target of claim 35, wherein the plurality of
materials includes a third material, the third material comprised
of platinum (Pt) or tantalum (Ta).
46. The sputter target of claim 35, wherein the plurality of
materials further includes a third material comprised of a
transition element, a refractory element, a cobalt-transition
element based master alloy, a cobalt-refractory element based
master alloy, a transition element based compound, or a refractory
element based compound.
47. The sputter target of claim 46, wherein the third material
constitutes a phase, and the phase of the third material has an
average size between greater than 0 micron and 50 microns.
48. The sputter target of claim 35, wherein the sputter target
comprises an alloy, the alloy including a plurality of phases, the
plurality of phases including at least a first phase and a second
phase, the first material constituting the first phase, the second
phase being the phase of the second material, the first material
comprised of a cobalt (Co) element, a ruthenium (Ru) element, a
nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a ruthenium (Ru) based compound, a nickel (Ni)
based compound, or an iron (Fe) based compound.
49. The sputter target of claim 35, wherein the sputter target is
comprised of Co, Cr, Pt and SiO.sub.2.
50. The sputter target of claim 35, wherein the first material
comprises at least 15 atomic percent or greater.
51. The sputter target of claim 35, wherein if the sputter target
consists of chromium (Cr) and the oxygen (O)-containing material
only, the oxygen (O)-containing material is an oxygen
(O)-containing material other than simply chromium oxide or simply
silicon dioxide (SiO.sub.2), and wherein if the sputter target
consists of chromium (Cr) and the oxide only, the oxide is an oxide
other than simply chromium oxide or simply silicon dioxide
(SiO.sub.2).
52. A sputter target comprising a plurality of materials, the
plurality of materials including at least a first material and a
second material, the first material comprised of cobalt (Co),
chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the
second material comprised of boron (B), a boron (B)-containing
material or a boride, the second material constituting a phase, the
phase of the second material having an average size between greater
than 0 micron and less than 10 microns.
53. The sputter target of claim 52, wherein the boron
(B)-containing material is a boron (B)-containing material
including one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, and wherein the boride is a boride of
one or more elements from the Periodic Table of elements shown in
Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA,
IB, IIB, IIIB or IVB.
54. The sputter target of claim 52, wherein the second material is
comprised of boron (B).
55. The sputter target of claim 52, wherein the phase of the second
material has an average size less than 2 microns.
56. The sputter target of claim 52, wherein the plurality of
materials further includes a third material comprised of a
transition element, a refractory element, a cobalt-transition
element based master alloy, a cobalt-refractory element based
master alloy, a transition element based compound, or a refractory
element based compound.
57. A sputter target comprising a plurality of materials, the
plurality of materials including at least a first material and a
second material, the first material comprised of ruthenium (Ru),
nickel (Ni), or iron (Fe), the second material comprised of boron
(B), a boron (B)-containing material or a boride, the second
material constituting a phase, the phase of the second material
having an average size between greater than 0 micron and 50
microns.
58. The sputter target of claim 57, wherein the boron
(B)-containing material is a boron (B)-containing material
including one or more elements from the Periodic Table of elements
shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA,
VIIIA, IB, IIB, IIIB or IVB, and wherein the boride is a boride of
one or more elements from the Periodic Table of elements shown in
Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA,
IB, IIB, IIIB or IVB.
59. The sputter target of claim 57, wherein the plurality of
materials further includes a third material comprised of a
transition element, a refractory element, a cobalt-transition
element based master alloy, a cobalt-refractory element based
master alloy, a transition element based compound, or a refractory
element based compound.
60. A method of fabricating a sputter target, the method comprising
the steps of: blending a plurality of materials including at least
a first material and a second material, the first material
comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel
(Ni), or iron (Fe), the second material comprised of carbon (C), a
carbon (C)-containing material, a carbide, a nitrogen
(N)-containing material, a nitride, a silicon (Si)-containing
material, or a silicide, the second material having an average
particle size between greater than 0 micron and 50 microns, the
first material comprising at least 15 atomic percent or greater,
the plurality of materials comprised of multiple powders, one or
more master alloy or compound powders, or a mixture of one or more
powders with one or more master alloy or compound powders; canning;
and pressing.
61. The method of claim 60, wherein the carbon (C)-containing
material is a carbon (C)-containing material including one or more
elements from the Periodic Table of elements shown in Roman numeral
column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB
or IVB, wherein the carbide is a carbide of one or more elements
from the Periodic Table of elements shown in Roman numeral column
number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,
wherein the nitrogen (N)-containing material is a nitrogen
(N)-containing material including one or more elements from the
Periodic Table of elements shown in Roman numeral column number
IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, wherein
the nitride is a nitride of one or more elements from the Periodic
Table of elements shown in Roman numeral column number IIA, IIIA,
IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, wherein the
silicon (Si)-containing material is a silicon (Si)-containing
material including one or more elements from the Periodic Table of
elements shown in Roman numeral column number IIA, IIIA, IVA, VA,
VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and wherein the silicide is
a silicide of one or more elements from the Periodic Table of
elements shown in Roman numeral column number IIA, IIIA, IVA, VA,
VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.
62. The method of claim 60, wherein the second material is
comprised of the carbide, the nitride, or the silicide, wherein the
carbide is a carbide of one or more elements from the Periodic
Table of elements shown in Roman numeral column number IIA, IIIA,
IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, wherein the
nitride is a nitride of one or more elements from the Periodic
Table of elements shown in Roman numeral column number IIA, IIIA,
IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and wherein the
silicide is a silicide of one or more elements from the Periodic
Table of elements shown in Roman numeral column number IIA, IIIA,
IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.
63. The method of claim 60, wherein the second material has an
average particle size between 1 micron and 5 microns.
64. The method of claim 60, wherein the plurality of materials
includes a third material, the third material comprised of platinum
(Pt) or tantalum (Ta).
65. The method of claim 60, wherein the plurality of materials
further includes a third material comprised of a transition element
powder, a refractory element powder, a cobalt-transition element
based master alloy powder, a cobalt-refractory element based master
alloy powder, a transition element based compound powder, or a
refractory element based compound powder.
66. A method of fabricating a sputter target, the method comprising
the steps of: blending a plurality of materials including at least
a first material and a second material, the first material
comprised of cobalt (Co), ruthenium (Ru), nickel (Ni), or iron
(Fe), the second material comprised of an oxygen (O)-containing
material or an oxide, the second material having an average
particle size between greater than 0 micron and 50 microns, the
plurality of materials comprised of multiple powders, one or more
master alloy or compound powders, or a mixture of one or more
powders with one or more master alloy or compound powders; canning;
and pressing.
67. The method of claim 66, wherein the oxygen (O)-containing
material is an oxygen (O)-containing material including one or more
elements from the Periodic Table of elements shown in Roman numeral
column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB
or IVB, and wherein the oxide is an oxide of one or more elements
from the Periodic Table of elements shown in Roman numeral column
number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or
IVB.
68. The method of claim 66, wherein the second material has an
average particle size between 1 micron and 5 microns.
69. The method of claim 66, wherein the plurality of materials
further includes a third material comprised of a transition
element, a refractory element, a cobalt-transition element based
master alloy, a cobalt-refractory element based master alloy, a
transition element based compound, or a refractory element based
compound.
70. The method of claim 66, wherein the second material is
comprised of the oxide, wherein the oxide is silicon dioxide
(SiO.sub.2).
71. The method of claim 66, wherein the second material is
comprised of the oxide, wherein the oxide is titanium oxide
(TiO.sub.2).
72. A method of fabricating a sputter target, the method comprising
the steps of: blending a plurality of materials including at least
a first material and a second material, the first material
comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel
(Ni), or iron (Fe), the second material comprised of an oxygen
(O)-containing material or an oxide, the second material having an
average particle size between greater than 0 micron and 50 microns,
the plurality of materials comprised of multiple powders, one or
more master alloy or compound powders, or a mixture of one or more
powders with one or more master alloy or compound powders, wherein
if the plurality of materials consists of chromium (Cr) and the
oxygen (O)-containing material only, the oxygen (O)-containing
material is an oxygen (O)-containing material other than simply
chromium oxide, and wherein if the plurality of materials consists
of chromium (Cr) and the oxide only, the oxide is an oxide other
than simply chromium oxide; canning; and pressing.
73. The method of claim 72, wherein the second material is
comprised of the oxide, wherein the oxide is an oxide of silicon
(Si), aluminum (Al) or titanium (Ti).
74. The method of claim 72, wherein the second material has an
average particle size less than 2 microns.
75. The method of claim 72, wherein the first material is comprised
of a cobalt (Co) element, a chromium (Cr) element, a ruthenium (Ru)
element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co)
based master alloy, a chromium (Cr) based master alloy, a ruthenium
(Ru) based master alloy, a nickel (Ni) based master alloy, an iron
(Fe) based master alloy, a cobalt (Co) based compound, a chromium
(Cr) based compound, a ruthenium (Ru) based compound, a nickel (Ni)
based compound, or an iron (Fe) based compound.
76. The method of claim 72, wherein the plurality of materials
includes a third material, the third material comprised of platinum
(Pt) or tantalum (Ta).
77. The method of claim 72, wherein the sputter target is comprised
of Co, Cr, Pt and SiO.sub.2.
78. The method of claim 72, wherein the second material is
comprised of the oxide, wherein the oxide is silicon dioxide
(SiO.sub.2).
79. The method of claim 72, wherein the second material is
comprised of the oxide, wherein the oxide is titanium oxide
(TiO.sub.2).
80. A method of fabricating a sputter target, the method comprising
the steps of: blending a plurality of materials including at least
a first material and a second material, the first material
comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel
(Ni), or iron (Fe), the second material comprised of boron (B), a
boron (B)-containing material or a boride, the second material
having an average particle size between greater than 0 micron and
less than 10 microns, the plurality of materials comprised of
multiple powders, one or more master alloy or compound powders, or
a mixture of one or more powders with one or more master alloy or
compound powders; canning; and pressing.
81. The method of claim 80, the boron (B)-containing material is a
boron (B)-containing material including one or more elements from
the Periodic Table of elements shown in Roman numeral column number
IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and
wherein the boride is a boride of one or more elements from the
Periodic Table of elements shown in Roman numeral column number
IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.
82. The method of claim 80, wherein the second material is
comprised of boron (B).
83. A method of fabricating a sputter target, the method comprising
the steps of: blending a plurality of materials including at least
a first material and a second material, the first material
comprised of ruthenium (Ru), nickel (Ni), or iron (Fe), the second
material comprised of boron (B), a boron (B)-containing material or
a boride, the second material having an average particle size
between greater than 0 micron and less than 50 microns, the
plurality of materials comprised of multiple powders, one or more
master alloy or compound powders, or a mixture of one or more
powders with one or more master alloy or compound powders; canning;
and pressing.
84. The method of claim 83, wherein the boron (B)-containing
material is a boron (B)-containing material including one or more
elements from the Periodic Table of elements shown in Roman numeral
column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB
or IVB, and wherein the boride is a boride of one or more elements
from the Periodic Table of elements shown in Roman numeral column
number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or
IVB.
85. The method of claim 83, wherein the plurality of materials
further includes a third material comprised of a transition element
powder, a refractory element powder, a cobalt-transition element
based master alloy powder, a cobalt-refractory element based master
alloy powder, a transition element based compound powder, or a
refractory element based compound powder.
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S. patent
application Ser. No. 10/739,401, filed Dec. 19, 2003, which is a
continuation-in-part of U.S. patent application Ser. No.
10/200,590, filed Jul. 23, 2002, all of which are hereby
incorporated by reference in their entirety for all purposes.
FIELD OF THE INVENTION
[0002] The present invention generally relates to sputtering
targets and methods for fabricating sputtering targets and, in
particular, relates to sputter targets comprising a plurality of
materials including at least a first material and a second
material, the first material comprised of cobalt (Co), chromium
(Cr), ruthenium (Ru), nickel (Ni), or iron (Fe) and the second
material comprised of carbon (C), a carbon (C)-containing material,
a carbide, a nitrogen (N)-containing material, a nitride, silicon
(Si), a silicon (Si)-containing material, a silicide, an oxygen
(O)-containing material, an oxide, boron (B), a boron
(B)-containing material, or a boride, and further relates to
methods for fabricating such sputter targets, and products produced
thereby.
BACKGROUND OF THE INVENTION
[0003] Cathodic sputtering processes are widely used for the
deposition of thin films of material onto desired substrates. A
typical sputtering system includes a plasma source for generating
an electron or ion beam, a target that comprises a material to be
atomized and a substrate onto which the sputtered material is
deposited. The process involves bombarding the target material with
an electron or ion beam at an angle that causes the target material
to be sputtered or eroded. The sputtered target material is
deposited as a thin film or layer on the substrate.
SUMMARY OF THE INVENTION
[0004] According to one embodiment, the present invention relates
to a novel method of fabricating sputtering targets that include
non-metals such as boron, carbon, nitrogen, oxygen, silicon, a
boride, a carbide, a nitride, an oxide, a silicide, a boron
(B)-containing material, a carbon (C)-containing material, a
nitrogen (N)-containing material, an oxygen (O)-containing
material, or a silicon (Si)-containing material, including mixtures
of non-metals, compounds of non-metals, master alloys containing
boron, carbon or silicon and products produced by these processes.
According to one embodiment, a process comprises preparation of
pre-alloyed powder(s) or master alloy powder(s) or selection of
ultra fine compound powder(s) of about 0.01 to 50 microns,
preferably 0.1 to 10 microns, more preferably 1.0 to 5.0 microns
average particle size and most preferably less than 2 microns. It
has been discovered that spitting will not occur when the above
phases are in form of ultra fine particles of less than 50 microns,
preferably less than 10 microns in size. After the ultra fine
powders are blended together, the powder blend is canned, followed
by a hot isostatic press (HIP) consolidation. Powder processing as
above is employed to make the target materials because of unique
advantages over the prior art's melting process, both technically
and economically.
[0005] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of carbon (C), a carbon (C)-containing material, a
carbide, a nitrogen (N)-containing material, a nitride, a silicon
(Si)-containing material, or a silicide. The second material
constitutes a phase. The phase of the second material has an
average size between greater than 0 micron and 50 microns. The
first material comprises at least 15 atomic percent or greater.
[0006] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), ruthenium (Ru),
nickel (Ni), or iron (Fe). The second material is comprised of an
oxygen (O)-containing material or an oxide. The second material
constitutes a phase. The phase of the second material has an
average size between greater than 0 micron and 50 microns.
[0007] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of an oxygen (O)-containing material or an oxide. The
second material constitutes a phase. The phase of the second
material has an average size between greater than 0 micron and 50
microns. If the sputter target consists of chromium (Cr) and the
oxygen (O)-containing material only, the oxygen (O)-containing
material is an oxygen (O)-containing material other than simply
chromium oxide. If the sputter target consists of chromium (Cr) and
the oxide only, the oxide is an oxide other than simply chromium
oxide.
[0008] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of boron (B), a boron (B)-containing material or a
boride. The second material constitutes a phase. The phase of the
second material has an average size between greater than 0 micron
and less than 10 microns.
[0009] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of ruthenium (Ru), nickel (Ni), or
iron (Fe). The second material is comprised of boron (B), a boron
(B)-containing material or a boride. The second material
constitutes a phase. The phase of the second material has an
average size between greater than 0 micron and 50 microns.
[0010] According to one aspect of the present invention, a method
of fabricating a sputter target comprises the steps of: blending a
plurality of materials; canning; and pressing. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of carbon (C), a carbon (C)-containing material, a
carbide, a nitrogen (N)-containing material, a nitride, a silicon
(Si)-containing material, or a silicide. The second material has an
average particle size between greater than 0 micron and 50 microns.
The first material comprises at least 15 atomic percent or greater.
The plurality of materials is comprised of multiple powders, one or
more master alloy or compound powders, or a mixture of one or more
powders with one or more master alloy or compound powders.
[0011] According to one aspect of the present invention, a method
of fabricating a sputter target comprises the steps of: blending a
plurality of materials; canning; and pressing. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), ruthenium (Ru),
nickel (Ni), or iron (Fe). The second material is comprised of an
oxygen (O)-containing material or an oxide. The second material has
an average particle size between greater than 0 micron and 50
microns. The plurality of materials is comprised of multiple
powders, one or more master alloy or compound powders, or a mixture
of one or more powders with one or more master alloy or compound
powders.
[0012] According to one aspect of the present invention, a method
of fabricating a sputter target comprises the steps of: blending a
plurality of materials; canning; and pressing. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of an oxygen (O)-containing material or an oxide. The
second material has an average particle size between greater than 0
micron and 50 microns. The plurality of materials is comprised of
multiple powders, one or more master alloy or compound powders, or
a mixture of one or more powders with one or more master alloy or
compound powders. If the plurality of materials consists of
chromium (Cr) and the oxygen (O)-containing material only, the
oxygen (O)-containing material is an oxygen (O)-containing material
other than simply chromium oxide. If the plurality of materials
consists of chromium (Cr) and the oxide only, the oxide is an oxide
other than simply chromium oxide.
[0013] According to one aspect of the present invention, a method
of fabricating a sputter target comprises the steps of: blending a
plurality of materials; canning; and pressing. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is
comprised of boron (B), a boron (B)-containing material or a
boride. The second material has an average particle size between
greater than 0 micron and less than 10 microns. The plurality of
materials is comprised of multiple powders, one or more master
alloy or compound powders, or a mixture of one or more powders with
one or more master alloy or compound powders.
[0014] According to one aspect of the present invention, a method
of fabricating a sputter target comprises the steps of: blending a
plurality of materials; canning; and pressing. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of ruthenium (Ru), nickel (Ni), or
iron (Fe). The second material is comprised of boron (B), a boron
(B)-containing material or a boride. The second material has an
average particle size between greater than 0 micron and less than
50 microns. The plurality of materials is comprised of multiple
powders, one or more master alloy or compound powders, or a mixture
of one or more powders with one or more master alloy or compound
powders.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Reference is now made to the accompanying drawing
wherein:
[0016] FIG. 1 shows the process flow chart of the invention
described herein according to one aspect of the present
invention.
[0017] FIG. 2 illustrates a representative microstructure of a
consolidated
(CO.sub.74Cr.sub.10Pt.sub.16).sub.92--(SiO.sub.2).sub.8 alloy
according to one aspect of the present invention.
[0018] FIG. 3 illustrates a representative microstructure of a
consolidated
(CO.sub.74Cr.sub.10Pt.sub.16).sub.92--(SiO.sub.2).sub.8 alloy
according to one aspect of the present invention.
[0019] Appendix 1 shows a Periodic Table of elements.
DETAILED DESCRIPTION OF THE INVENTION
[0020] Sputtering target materials for sputtering process range
from pure metals to ever more complicated alloys. Complex 3 to 6
element alloys may be utilized for sputtering targets. Alloying
additions such as boron, carbon, nitrogen, oxygen, silicon and so
on are added to Cr--, Co--, Fe-based alloys to modify
characteristics such as deposited film grain-size, surface energy
and magnetic properties.
[0021] According to one embodiment, the presence of non-metal
additions like boron, carbon, nitrogen, oxygen and silicon to
target materials is either in the form of pure elements, e.g. boron
and carbon, or in the form of compounds like boride, carbide,
nitride and oxide. The pure element phases such as boron and carbon
and the compound phases like boride, carbide, nitride, oxide, and
silicide, however cause spitting problems during sputtering. The
present invention provides a solution to this problem.
[0022] The powders of the present invention include elemental
powders, pre-alloyed powders, powders of master alloys and/or
intermetallic compound powders composed of 2 to 6 elements,
including but not limited to Cr--, Co--, Ru--, Ni--, and/or
Fe-based alloys. According to one aspect of the present invention,
examples of master alloys include pre-alloyed powders, and
pre-alloyed powders may be atomized master alloys.
[0023] The powders of the present invention contain pure Cr, Co,
Ru, Ni, Fe, Pt and/or Ta and/or (optionally) pre-alloyed or master
alloy powders of said pure elements, and include at least a boride,
a boron (B)-containing material (e.g., boron based inorganic
compound or master alloy), a carbide, a carbon (C)-containing
material (e.g., carbon based inorganic compound or master alloy), a
nitride, a nitrogen (N)-containing material, a silicide, a silicon
(Si)-containing material (e.g., silicon based master alloy), an
oxide, or an oxygen (O)-containing material of one or more elements
from the Periodic Table of elements shown in Roman numeral column
number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB
(see Appendix 1). These Roman numeral column numbers correspond to
column numbers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14.
[0024] Examples of a boron (B)-containing material include a
boride; examples of a carbon (C)-containing material include a
carbide; examples of a nitrogen (N)-containing material include a
nitride; examples of a silicon (Si)-containing material include a
silicide; and examples of an oxygen (O)-containing material
includes an oxide.
[0025] In preferred embodiments, the non-metallic additive is in
combined form such as an inorganic compound or a master alloy of a
non-metal although elemental additions may be used if desired.
Preferred doping non-metals are compounds of boron, carbon and
nitrogen. In still other embodiments compounds of oxygen or silica
are included as dopants. Preferred doping compounds are borides or
boron (B)-containing materials, carbides, or carbon (C)-containing
materials and nitrides, as well as oxides and suicides or silicon
(Si)-containing master alloys. Especially preferred compounds are
MoB, AlN (Aluminum Nitride), and B.sub.4C, as well as
Al.sub.2O.sub.3, Cr.sub.2O.sub.3, SiO.sub.2, and mixtures thereof.
The amount of dopant may range from about 1 to 15 atomic percent
(at. %), and preferably from 1 to 12 at. %.
[0026] In further embodiments, the step of forming the doped
elemental powders or alloys is carried out by mechanical mixing to
achieve substantially uniform blending of the materials. In further
embodiments, the canning step is carried out so as to avoid
segregation of the doped element or alloy.
[0027] FIG. 1 shows the process flow for making the targets. The
first step is the preparation of raw material powders like atomized
alloy powders of Ni--Al--B, Fe--B, Fe--C, Fe--Si and so on or the
selection of commercially available ultra fine compound powders
such as Al.sub.2O.sub.3, AlN, MoB and Cr.sub.2O.sub.3 of 10 microns
or less. Atomized powders have very fine microstructure because of
extremely quick cooling and rapid solidification; therefore it is
the first choice as raw materials. In some cases powders of fine
microstructures can also be made by melting and mechanically
crushing ingots much more economically than by atomization,
especially for small quantities of powder. Some ultra fine compound
powders like Al.sub.2O.sub.3, AlN, MoB, Cr.sub.2O.sub.3, B.sub.4C
and so on are also commercially available, and therefore save both
time and money for new product development. Special blending
methods of various powders together are required because
segregation occurs quite often, especially when powders of
differing particle size and gravity are combined. Those special
blending and homogenizing methods include ball milling, v-blending,
tubular blending, and attritor milling and/or wet blending.
Therefore, it is preferred that the alloy powders and/or mixture be
substantially homogeneous for best results.
[0028] Proper canning techniques are needed to avoid segregation
during canning. Hot pressing in a graphite die could be used as
well to consolidate the powder. The powders are canned in
preparation for consolidation. In canning for example, a container
is filled with the powder, evacuated under heat to ensure the
removal of any moisture or trapped gasses present, and then sealed.
In vacuum hot pressing, the chamber is continuously evacuated prior
to and during load application. Although the geometry of the
container is not limited in any manner, the container can possess a
near-net shape geometry with respect to the final material
configuration.
[0029] The encapsulate material from the canning step is then
consolidated preferably via Hot-Isostatic-Pressing (HIP), a
procedure known in the art. A HIP unit is typically a cylindrical
pressure vessel large enough to house one or more containers. The
inner walls of the vessel can be lined with resistance heating
elements, and the pressure can be controlled by the introduction of
inert gas within the container. HIP parameters including
temperature, pressure and hold time will be minimized to prevent
the growth of compound phases and grain size, as well as to save
energy and to protect the environment. Pressures of about 5 to
about 60 ksi (preferably 10-20 ksi) at temperatures between about
500.degree. C. to about 1500.degree. C., are typically employed to
achieve appropriate densities. Depending upon the complexity of the
cycle, total hold times during isostatic pressing typically vary
from about 0.5 to about 12 hours. Pressure during vacuum hot
pressing is varied from 0.5 to 5 ksi (preferably 1.5 to 2.5 ksi) at
temperatures ranging from about 500.degree. C. to 1500.degree. C.
(preferably 800-1000.degree. C.). It is noteworthy that other
powder consolidation techniques such as hot pressing and cold
pressing can also be employed independently or in conjunction with
HIP processing.
[0030] After consolidation, the solid material form (billet) is
removed from the encapsulation can, and a slice of the billet can
then be sent to be tested as to various properties of the billet.
If desired, the billet can be subjected to optional
thermo-mechanical processing to further manipulate the
microstructural and macro-magnetic properties of the target. Also,
the final shape and size of the sputter targets can be formed, for
example, by processes such as wire EDM, saw, waterjet, lathe,
grinder, mill, etc. In these steps, the target can be cleaned and
subjected to a final inspection.
[0031] Table 1 shows examples of sputter target materials and their
exemplary chemistry in accordance with one aspect of the present
invention. TABLE-US-00001 TABLE 1 alloys manufactured using the
method described herein. Materials Exemplary Chemistry
Co--Cr--Pt--B Co61at %-Cr15at %-Pt12at %-B12at % Co--Cr--Pt--O--Si
Co56at %-Cr18at %-Pt16at %-SiO.sub.2 (0.5-10) mol % Co--Pt--B--C
Co60at %-Pt20at %-B16at %-C4at % Co--Ta--N Co50at %-Ta50at % doped
with nitrogen of 1-4 at. % Co--Ta--Zr--O--Si Co85at %-Ta5at %-Zr5at
%-SiO.sub.2 (0.5-10) mol % Co--Ti--Pt--B Co62at %-Ti6at %-Pt12at
%-B20at % Cr--B Cr97at %-B3at % Cr--Mo--B Cr80at %-Mo15at %-B5at %
Cr--Mo--O Cr80at %-Mo20at % doped with oxygen of 1-4 at. % Cr--O Cr
doped with oxygen of 1-4 at. % Cr--Ti--B Cr80at %-Ti16at %-B4at %
Cr--V--O Cr80at %-V20at % doped with oxygen of 1-4 at. %
Cr--V--Zr--O Cr79at %-V20at %-Zr1at % doped with oxygen of 1-4 at.
% Cr--W--O Cr90at %-W10at % doped with oxygen of 1-4 at. %
Cr--Zr--O Cr99at %-Zr1at % doped with oxygen of 1-4 at. % Fe--Co--B
Fe56at %-Co31at %-B11at % Fe--Si--Al Fe73at %-Si17at %-Al10at %
Fe--Ta--C Fe80at %-Ta8at %-C12at % Ni--Al--B Ni50at %-Al50at %
doped with boron of 1-4 at. % Ni--Al--N Ni48at %-Al48at % doped
with nitrogen of 4 at % Ni--Al--O Ni50at %-Al50at % doped with
oxygen of 1-4 at. % Ru--Al--O Ru50at %-Al50at % doped with oxygen
of 1-4 at. % Ru--Al--N Ru50at %-Al50at % doped with nitrogen of 1-4
at. %
[0032] Table 2 shows examples of sputter target materials and their
exemplary phases in accordance with one aspect of the present
invention. The sputter target materials set forth in each row may
include some or all of the exemplary phases described in the row,
and they may include other additional phases. TABLE-US-00002 TABLE
2 alloys manufactured using the method described herein. Materials
Exemplary Phases Co--Cr--Pt--B Co--Cr master alloy; Co--Cr--B
master alloy; Pt; Co; Cr; Co--B master alloy; Co--B compound; Cr--B
master alloy; Cr--B compound; Co--Pt master alloy Co--Cr--Pt--O--Si
Co; Co--Cr master alloy; Pt; SiO.sub.2; Co--Cr--Pt master alloy
Co--Ta--Zr--O--Si Co--Zr master alloy; Co--Ta master alloy;
ZrO.sub.2; SiO.sub.2; Co; CoSi.sub.2; Co--Ta--Zr master alloy
Co--Ti--Pt--B Co--B master alloy; Co--Ti master alloy; Co--Pt
master alloy; Ti--B compound Cr--Ti--B Cr; Ti; Cr--B master alloy;
Cr.sub.2B compound; TiB.sub.2 compound Fe--Ta--C Fe; C; Ta--C
compound Fe--Ta--C Fe; Fe--C master alloy; Ta--C compound Ni--Al--B
Ni; Ni--Al compound (e.g., NiAl, NiAl.sub.3); Ni--Al master alloy;
Ni--B master alloy; Ni--B compound (e.g., Ni.sub.3B); AlB.sub.2
compound Ru--Al--O Ru; Al; aluminum oxide; ruthenium oxide; Ru--Al
compound (e.g., Al.sub.6Ru, Al.sub.13Ru.sub.4, Al.sub.2Ru,
AlRu)
[0033] Table 3 shows examples of sputter target materials and their
exemplary powders that may be used to fabricate the sputter
targets. The sputter target materials set forth in each row may be
fabricated using some of all of the powders set forth in the row
and optionally using other additional powders. TABLE-US-00003 TABLE
3 alloys manufactured using the method described herein. Materials
Exemplary Powders Co--Cr--Pt--O--Si Cr powder, Co--Cr master alloy
powder, Pt powder; SiO.sub.2 compound powder Cr--Mo--B Cr powder;
Mo powder; B powder Cr--Ti--B Cr powder; Ti powder; B powder
Fe--Si--Al Fe--Si master alloy powder; Fe--Al master alloy powder;
Fe--Si silicide
EXAMPLES
[0034] The following examples demonstrate the present invention
further, but should not be construed as a limitation of the present
invention. The processes for all materials are similar with each
other as shown in FIG. 1, and the main differences are various
combinations of raw materials (powders).
Example 1
Production Of Cr--Mo Based Sputtering Target with Boron
Content--Cr80at %-Mo 15 at %-B5 at %
[0035] The above alloy is made with the following powder blends:
(1) Cr powder, Mo powder and ultra fine MoB compound powder, or (2)
Cr powder, Mo powder and pre-alloyed Cr-3.1 wt % B powder (i.e.,
Cr-3.1 wt % B master alloy powder) that is made with a vacuum
induction melter at 1730.degree. C. and mechanically crushing cast
ingots into powder at room temperature. The pre-alloyed Cr-3.1 wt.
% B powder can also be made by gas atomization. Special attention
must be paid to mixing all powders together when ultra fine
compound powder like MoB is used, otherwise segregation may occur.
Herewith an attritor mill or a ball mill must be used for blending
from 2 to 24 hours. The HIP parameters for this kind of alloy
include the temperature ranging from about 1000-1400.degree. C., at
a pressure from about 5-40 ksi and a hold time from about 1-12
hours. The cooling rate must be controlled too, otherwise the HIPed
billet may crack during cooling down. A cooling rate of 3.degree.
C./min and a hold plateau at 800.degree. C. for 6 hours is
introduced to cooling phase.
Example 2
Production Of Co--Cr--Pt Based Sputtering Target with SiO.sub.2
Content--Co56 at %-Cr18 at %-Pt16 at %-03.33 at %-Si 1.67 at %
[0036] Two different combinations of starting powders are employed
herein. A first alternative is the combination of Co powder, Cr
powder, Pt powder and ultra fine Sio.sub.2 compound powder. A
second alternative is the combination of Co powder, Cr powder, Pt
powder, atomized Co--Si pre-alloy powder (i.e., Co--Si master alloy
powder) and ultra fine Cr.sub.2O.sub.3 compound powder. The
silicides are ultra fine and well dispersed in Co matrix of
original gas-atomized Co--Si particles. Special mixing methods
using an attritor mill or a ball mill for 2 to 24 hours must be
employed here to mix all powders together homogeneously when ultra
fine compound powders like SiO.sub.2 and Cr.sub.2O.sub.3 are used,
otherwise segregation may occur. The HIP parameters for this kind
of alloy include the temperature ranging from about
600-1400.degree. C., at a pressure from about 5-40 ksi and a hold
time from about 1-12 hours.
Example 3
Production Of Cr--Mo--X (wherein X is Boride, Carbide, Nitride or
Oxide, or Mixtures Thereof) Sputtering Target. To produce
Cr--Mo--X, Cr Powder, Mo Powder, and One or Both of Cr Oxide Powder
and Mo Oxide Powder are Utilized according to one Aspect of the
Present Invention.
[0037] One example of Cr--Mo--X: Cr80 at %-Mo20 at % doped with
oxygen of 1-4 atomic % (at. %).
[0038] Regular Cr powder, Mo powder and partly oxidized Cr compound
powder of oxygen level 15000 ppm are used to make the targets. The
Cr powder of high oxygen is produced by oxidizing Cr flakes at high
temperature and then subjected to mechanical crushing. In this
case, only a part of the surface area of Cr powder is covered with
oxides. Special attention must be paid to Cr powder of high oxygen
level and mixing all powders together in this case, otherwise
segregation may occur. Herewith an attritor mill or a ball mill may
be used for blending from 2 to 24 hours. The HIP parameters for
this kind of alloy include the temperature ranging from about
800-1400.degree. C., at a pressure from about 5-40 ksi and a hold
time from about 1-12 hours. The cooling rate must be controlled
too, otherwise the HIPed billet may crack during cooling down. A
cooling rate of 3.degree. C./min and a hold plateau at 800.degree.
C. for 6 hours is introduced to cooling phase.
Example 4
Production of NiAl Sputtering Target Doped with Boron, Oxygen or
Nitrogen--Ni50at %-Al50at % Doped with Boron of 1-4 at. %.
[0039] Gas-atomized NiAl intermetallic compound powder and ultra
fine Al.sub.2O.sub.3 compound powder and AlN compound powder of
less than 5 microns in average particle diameter size were taken
for making NiAl sputtering targets doped with oxygen or nitrogen.
Besides gas-atomized NiAl powder, boron-doped gas-atomized NiAl
powder was also taken for making NiAl sputtering targets doped with
boron and borides are ultra fine and well dispersed in the matrix.
Conventional gas atomization methods are used to manufacture the
powders. Special attention must be paid to mixing all powders
together when ultra fine compound powders like Al.sub.2O.sub.3 and
AlN are used, otherwise segregation may occur. Herewith an attritor
mill or a ball mill may be used for blending from 2 to 24 hours.
The HIP parameters for this kind of alloy include the temperature
ranging from about 900-1400.degree. C., at a pressure from about
5-40 ksi, and a hold time from about 1-12 hours. The cooling rate
must be controlled too, otherwise the HIPed billet may crack during
cooling down. A power-off furnace cooling and a hold plateau at
700.degree. C. for 4 hours is introduced to cooling phase.
[0040] FIG. 2 illustrates a representative microstructure of a
Co--Cr--Pt--O--Si sputter target according to one aspect. The
sputter target is manufactured using 100-mesh cobalt (Co) powder at
29.53 wt. %, 100-mesh Co-24.22Cr powder at 27.73 wt. %, >0 .mu.m
and <5 .mu.m SiO.sub.2 powder at 6.13 wt. %, and platinum (Pt)
powder at 36.61 wt. %. The manufactured sputter target includes,
for example, a first material, a second material and a third
material. The first material is comprised of Co (e.g., Co--Cr
master alloy or Co). The second material is comprised of an oxide,
or more specifically SiO.sub.2 compound in this example. The third
material is comprised of Pt. The first material may constitute a
first phase, the second material may constitute a second phase, and
the third material may constitute a third phase. The second phase
of the second material has an average size between greater than 0
and 50 microns.
[0041] The sputter target includes dark Co phases, dark Co--Cr
master alloy phases, light Pt phases, and dark SiO.sub.2 compound
phases. In this example, the SiO.sub.2 compound phases have an
average size between greater than 0 and 10 microns (e.g., between
greater than 0 and 5 microns).
[0042] FIG. 3 illustrates a representative microstructure of a
Co--Cr--Pt--O--Si sputter target according to one aspect. The
sputter target is manufactured using 16.97 wt. % cobalt (Co)
powder, 5.49 wt. % CoSi.sub.2 powder, 14.52 wt. % CoO powder, 26.4
wt. % Co-24.22Cr powder, and 36.62 wt. % platinum (Pt) powder. The
manufactured sputter target includes, for example, a first
material, a second material and a third material. The first
material is comprised of Co (e.g., Co--Cr master alloy or Co). The
second material is comprised of a silicide, or more specifically
CoSi.sub.2 compound. The third material is comprised of Pt. The
first material may constitute a first phase, the second material
may constitute a second phase, and the third material may
constitute a third phase. The second phase of the second material
has an average size between greater than 0 and 50 microns.
[0043] The sputter target includes dark Co phases, dark Co--Cr
master alloy phases, light Pt phases, and dark CoSi.sub.2 compound
phases. In this example, the CoSi.sub.2 compound phases have an
average size between greater than 0 and 5 microns. The Co phases
have an average size between greater than 0 and 150 microns.
[0044] According to one embodiment of the present invention, a
sputter target comprises a plurality of materials. The plurality of
materials includes at least a first material and a second material.
The first material is comprised of cobalt (Co), chromium (Cr),
ruthenium (Ru), nickel (Ni), or iron (Fe). For example, the first
material is comprised of one or more of the following according to
one aspect: a cobalt (Co) element, a chromium (Cr) element, a
ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe)
element, a cobalt (Co) based master alloy, a chromium (Cr) based
master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni)
based master alloy, an iron (Fe) based master alloy, a cobalt (Co)
based compound, a chromium (Cr) based compound, a ruthenium (Ru)
based compound, a nickel (Ni) based compound, and an iron (Fe)
based compound. According to one aspect, the first material
comprises at least 15 atomic percent or greater. According to one
aspect, the first material constitutes a first phase, and the first
phase has an average size between greater than 0 micron and 50
microns (i.e., 0<phase size.ltoreq.50 microns). The present
invention is not limited to these ranges, and in another
embodiment, the first phase has an average size greater than 50
microns.
[0045] The second material is comprised of carbon (C), a carbon
(C)-containing material, a carbide, a nitrogen (N)-containing
material, a nitride, a silicon (Si)-containing material, a
silicide, an oxygen (O)-containing material, an oxide, boron (B), a
boron (B)-containing material, or a boride. For example, the second
material is comprised of one or more of the following according to
one aspect: MoB compound, Co--Cr--B master alloy, Co--B master
alloy, Co--B compound, Cr--B master alloy, Cr--B compound (e.g.,
Cr.sub.2B), Ti--B compound (e.g., TiB.sub.2), Ti--O compound, Ni--B
master alloy, Ni--B compound, Al--B compound (e.g., AlB.sub.2),
Co--Si master alloy, Fe--Si master alloy, Cr--Si compound, silicon
oxide compound (e.g., SiO.sub.2), Co--Si compound (e.g.,
CoSi.sub.2, CO.sub.2Si), titanium oxide (e.g., TiO.sub.2), chromium
oxide (e.g., Cr.sub.2O.sub.3), molybdenum oxide, aluminum oxide
(e.g., Al.sub.2O.sub.3), ruthenium oxide, C (e.g., graphite), Ta--C
compound, Fe--C master alloy, Fe--C compound, aluminum nitride,
cobalt nitride, chromium nitride, and iron nitride.
[0046] According to one aspect, the second material constitutes a
second phase, and the second phase of the second material has an
average size between greater than 0 micron and 50 microns (e.g.,
between greater than 0 micron and 20 microns, between greater than
0 micron and 10 microns, between 0.1 microns and 10 microns,
between greater than 0 micron and 5 microns, between 1 micron and 5
microns, between greater than 0 micron and 2 microns, or less than
2 microns, etc.).
[0047] According to one aspect, the plurality of materials further
includes a third material. According to one aspect, the third
material is comprised of one or more of the following: a transition
element, a refractory element, a cobalt-transition element based
master alloy, a cobalt-refractory element based master alloy, a
transition element based compound, and a refractory element based
compound. In another aspect, the third material is comprised of
platinum (Pt) or tantalum (Ta). According to one aspect, the third
material constitutes a third phase, and the third phase has an
average size between greater than 0 micron and 50 microns (i.e.,
0<phase size.ltoreq.50 microns). The present invention is not
limited to these ranges, and in another embodiment, the third phase
has an average size greater than 50 microns.
[0048] According to one aspect of the present invention, a sputter
target is fabricated by blending a plurality of materials, canning
and pressing. The plurality of materials includes at least the
first material and the second material described above. The
plurality of materials may also include the third material
described above. The plurality of materials may further include
other materials. When the plurality of materials are blended, each
of the plurality of materials (e.g., each of the first, second and
third materials) is in powder form, for example, elemental powders,
one or more master alloy or compound powders, or a mixture of one
or more powders with one or more master alloy or compound powders.
Each of the first material, second material and third materials
described above is in powder form for blending. According to one
aspect, the particle size of the first material, the particle size
of the second material, and particle size of the third material are
the same as the size of the first phase, the size of the second
phase, and the size of the third phase described above,
respectively.
[0049] Some examples of a transition element include elements from
the Periodic Table of elements shown in Roman numeral column number
IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB according to one aspect of
the present invention. Some examples of a refractory element
include elements from the Periodic Table of elements shown in Roman
numeral column number IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB that
have a melting point greater than or about equal to the melting
point of iron (Fe) according to one aspect of the present
invention.
[0050] Some examples of a cobalt-transition element based master
alloy include a Co--Cr master alloy, a Co--Mn master alloy, a
Co--Fe master alloy, a Co--Cr--B master alloy, and a Co--Ni master
alloy according to one aspect of the present invention. Some
examples of a cobalt-refractory element based master alloy include
a Co--Ta master alloy, a Co--Pt master alloy and a Co--Zr master
alloy according to one aspect of the present invention.
[0051] Some examples of a transition element based compound include
CoSi.sub.2, CrSi.sub.2, Fe.sub.3C, and Ni.sub.3Al according to one
aspect of the present invention. Some examples of a refractory
element based compound include TaC, Ta.sub.2C, TaB.sub.2, TaB,
Mo.sub.2C, MoSi.sub.2, Mo.sub.2B and Mo.sub.2C according to one
aspect of the present invention.
[0052] According to one aspect of the present invention, a master
alloy is a combination of two or more elements consisting of a
single or a multi-phase material, either as a simple solid solution
(single-phase) of a minor element in a matrix of the major element
or a combination of a solid solution and one or more secondary
phases (multi-phase) having at least two constituents among the
alloying elements. Compounds of two or three different elements are
substances containing a defined number of each atom species and
having specific physical and chemical properties, on the whole,
different from those which their constituents had as elementary
substances.
[0053] According to one aspect of the present invention, a sputter
target includes chromium and an oxide that is not a simple chromium
oxide or Cr.sub.2O.sub.3. For example, such sputter target
includes: chromium; chromium oxide or Cr.sub.2O.sub.3; and other
element(s), alloy(s) and/or compound(s). In another example, such
sputter target includes: chromium; and a compound(s) based on a
chromium oxide (as opposed to a particular chromium oxide such as
Cr.sub.2O.sub.3).
[0054] According to one aspect of the present invention, a sputter
target includes chromium and an oxide that is not a simple silicon
dioxide (SiO.sub.2). For example, such sputter target includes:
chromium; silicon dioxide; and other element(s), alloy(s) and/or
compound(s). In another example, such sputter target includes:
chromium; and a compound(s) based on a silicon oxide (as opposed to
a particular silicon oxide such as siO.sub.2).
[0055] While this invention has been described with reference to
several preferred embodiments, it is contemplated that various
alterations and modifications thereof will become apparent to those
skilled in the art upon a reading of the detailed description
contained herein. It is therefore intended that the following
claims are interpreted as including all such alterations and
modifications as fall within the true spirit and scope of this
invention.
* * * * *