U.S. patent application number 11/610221 was filed with the patent office on 2007-06-14 for substrate processing apparatus and substrate processing method.
Invention is credited to Takashi Hara, Kunio Yamada.
Application Number | 20070130716 11/610221 |
Document ID | / |
Family ID | 38137804 |
Filed Date | 2007-06-14 |
United States Patent
Application |
20070130716 |
Kind Code |
A1 |
Yamada; Kunio ; et
al. |
June 14, 2007 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Abstract
A substrate processing apparatus comprises a multifunctional
nozzle having a double-pipe structure. An inner flow path of the
multifunctional nozzle is connected to a first supply suction
system through a supply suction pipe. An outer flow path is
connected to a second supply suction system through the supply
suction pipe. The first supply suction system and the second supply
suction system have respectively chemical liquid supply sources,
rinse liquid supply sources, inert gas supply sources, and
ejectors. Such a configuration makes it possible to selectively
supply the chemical liquid, supply the rinse liquid, and supply the
inert gas and suck in through the inner flow path and the outer
flow path of the multifunctional nozzle.
Inventors: |
Yamada; Kunio; (Kyoto,
JP) ; Hara; Takashi; (Kyoto, JP) |
Correspondence
Address: |
OSTROLENK FABER GERB & SOFFEN
1180 AVENUE OF THE AMERICAS
NEW YORK
NY
100368403
US
|
Family ID: |
38137804 |
Appl. No.: |
11/610221 |
Filed: |
December 13, 2006 |
Current U.S.
Class: |
15/300.1 ;
134/21; 239/589 |
Current CPC
Class: |
H01L 21/6708 20130101;
H01L 21/67051 20130101 |
Class at
Publication: |
015/300.1 ;
239/589; 134/021 |
International
Class: |
A47L 5/00 20060101
A47L005/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 14, 2005 |
JP |
2005-361032 |
Claims
1. A substrate processing apparatus comprising: a nozzle that has a
first flow path having a first end opening and a second flow path
having a second end opening adjacent to said first end opening and
discharges a chemical liquid for processing a substrate from said
first end opening; a chemical liquid supply system that is
connected to said first flow path and supplies the chemical liquid;
and a suction device that is connected to said second flow path and
applies suction through said second flow path.
2. The substrate processing apparatus according to claim 1, wherein
said suction device applies suction through the second flow path
after the discharge of the chemical liquid through said first flow
path from said chemical liquid supply system is completed.
3. The substrate processing apparatus according to claim 1, wherein
said suction device applies suction through said second flow path
in a time period during which the chemical liquid is discharged
through said first flow path from the chemical liquid supply
system.
4. The substrate processing apparatus according to claim 1, further
comprising a first guide member that is opposed to said first end
opening and said second end opening and guides into said second end
opening the chemical liquid discharged through said first flow
path.
5. The substrate processing apparatus according to claim 1, further
comprising an inert gas supply system that is connected to said
first flow path and supplies an inert gas.
6. The substrate processing apparatus according to claim 5, wherein
the inert gas is discharged through said first flow path from said
inert gas supply system after the discharge of the chemical liquid
through the first flow path from said chemical liquid supply system
is completed.
7. The substrate processing apparatus according to claim 5, wherein
said suction device applies suction through said second flow path
in a time period during which the inert gas is discharged through
said first flow path from said inert gas supply system.
8. The substrate processing apparatus according to claim 1, further
comprising an inert gas supply system that is connected to said
second flow path and supplies an inert gas.
9. The substrate processing apparatus according to claim 1, further
comprising a rinse liquid supply system that is connected to said
first flow path and supplies a rinse liquid.
10. The substrate processing apparatus according to claim 9,
wherein the rinse liquid is discharged through said first flow path
from said rinse liquid supply system after the discharge of the
chemical liquid through said first flow path from said chemical
liquid supply system is completed.
11. The substrate processing apparatus according to claim 9,
wherein said suction device applies suction through said second
flow path in a time period during which the rinse liquid is
discharged through said first flow path from said rinse liquid
supply system.
12. The substrate processing apparatus according to claim 11,
further comprising a second guide member that is opposed to said
first end opening and said second end opening and guides into said
second end opening the rinse liquid discharged through said first
flow path.
13. The substrate processing apparatus according to claim 1,
further comprising a rinse liquid supply system that is connected
to said second flowpath and supplies a rinse liquid.
14. The substrate processing apparatus according to claim 1,
further comprising an inert gas supply system that is connected to
said first flow path and supplies an inert gas, and a rinse liquid
supply system that is connected to said first flow path and
supplies a rinse liquid, said suction device applying suction
through said second flow path in a time period during which the
chemical liquid is discharged through said first flow path from
said chemical liquid supply system, said suction device applying
suction through said second flow path in a time period during which
the rinse liquid is discharged through said first flow path from
said rinse liquid supply system, and said suction device applying
suction through said second flow path in a time period during which
the inert gas is discharged through said first flow path from said
inert gas supply system.
15. A substrate processing apparatus comprising a nozzle that has a
first flow path having a first end opening and a second flow path
having a second end opening adjacent to said first end opening and
discharges a chemical liquid for processing a substrate from said
first end opening; a chemical liquid supply system that is
connected to said first flow path and supplies the chemical liquid;
a suction device that is connected to said first flow path and
applies suction through said first flow path; and an inert gas
supply system that is connected to said second flow path and
supplies an inert gas.
16. The substrate processing apparatus according to claim 15,
further comprising a rinse liquid supply system that is connected
to at least one of said first flow path and said second flow path
and supplies a rinse liquid.
17. A substrate processing apparatus comprising: a nozzle that has
a first flow path having a first end opening and a second flow path
having a second end opening adjacent to said first end opening and
discharges a chemical liquid for processing a substrate from said
first end opening; a chemical liquid supply system that is
connected to said first flow path and supplies the chemical liquid;
a suction device that is connected to said first flow path and
applies suction through said first flow path; and a rinse liquid
supply system that is connected to said second flow path and
supplies a rinse liquid.
18. The substrate processing apparatus according to claim 17,
further comprising an inert gas supply system that is connected to
at least one of said first flow path and said second flow path and
supplies an inert gas.
19. The substrate processing apparatus according to claim 1,
wherein either one of said first end opening and said second end
opening is provided so as to surround the other end opening.
20. The substrate processing apparatus according to claim 19,
wherein either one of said first flow path and said second flow
path is formed within a tubular first member, and the other flow
path is formed between said first member and a tubular second
member having an inner peripheral surface surrounding an outer
peripheral surface of said first member.
21. The substrate processing apparatus according to claim 20,
wherein a tip of said second member projects farther than a tip of
said first member.
22. The substrate processing apparatus according to claim 20,
wherein said second member is so formed that the inner peripheral
surface at its tip portion progressively comes closer to the outer
peripheral surface of said first member toward its tip.
23. A substrate processing method comprising the steps of:
positioning a nozzle having a first flow path having a first end
opening and a second flow path having a second end opening adjacent
to said first end opening above a substrate; discharging a chemical
liquid through said first flow path after said step of positioning
the nozzle above the substrate; and applying suction through said
second flow path during or after said step of discharging the
chemical liquid.
24. The substrate processing apparatus according to claim 23,
further comprising the step of discharging an inert gas through at
least one of said first flow path and said second flow path during
or after said step of discharging the chemical liquid.
25. The substrate processing apparatus according to claim 23,
further comprising the step of discharging a rinse liquid through
at least one of said first flow path and said second flow path
during or after said step of discharging the chemical liquid.
26. The substrate processing apparatus according to claim 23,
wherein said step of discharging the chemical liquid comprises said
step of discharging the chemical liquid toward the substrate
through said first flow path to process the substrate.
27. The substrate processing method according to claim 26, further
comprising a nozzle retracting step for retracting said nozzle from
above the substrate after said step of processing the substrate,
said step of discharging the chemical liquid further comprising the
step of discharging the chemical liquid through said first flow
path after said nozzle retracting step, to clean a deposit of the
chemical liquid adhering to the vicinity of the first end opening
of said nozzle.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a substrate processing
apparatus and a substrate processing method that subject a
substrate to predetermined processing.
[0003] 2. Description of the Background Art
[0004] Substrate processing apparatuses have been conventionally
used to subject various types of substrates such as semiconductor
wafers, glass substrates for photomasks, glass substrates for
liquid crystal displays, and glass substrates for optical disks,
and other substrates to various types of processing.
[0005] In the substrate processing apparatuses, a chemical liquid
using BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric
acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric
acid, phosphoric acid, acetic acid, oxalic acid, ammonia, or the
like is supplied to the substrate, to subject the substrate to
surface processing (hereinafter referred to as chemical liquid
processing).
[0006] In the substrate processing apparatus that performs the
chemical liquid processing, a deposit of the chemical liquid
adheres to a tip portion of a nozzle for supplying the chemical
liquid to the substrate. The deposit of the chemical liquid is
formed by supplying the chemical liquid to the substrate using the
nozzle and then drying the chemical liquid adhering to the tip
portion of the nozzle.
[0007] This phenomenon easily occurs when a chemical liquid
containing a salt, e.g., a solution mixture of ammonium fluoride
and hydrofluoric acid (BHF) or a solution mixture of ammonium
fluoride and phosphoric acid is used.
[0008] In a substrate processing apparatus that individually
supplies an acid chemical liquid and an alkali chemical liquid to a
substrate, when nozzles for respectively supplying the chemical
liquids are arranged in close proximity to each other, components
of the chemical liquids respectively adhering to the nozzles may be
diffused into a peripheral atmosphere to react with each other,
thereby producing a salt. In this case, a deposit is liable to
adhere to tip portions of the nozzles.
[0009] The deposit adhering to the tip portion of the nozzle grows
as the chemical liquid is supplied to the substrate. In this case,
the deposit that has grown drops on the substrate from the nozzle,
or the supply conditions of the chemical liquid supplied from the
nozzle to the substrate are changed so that processing defects
occur in the substrate.
[0010] In order to remove the deposit adhering to the tip portion
of the nozzle, there is a chemical liquid supply nozzle with a
nozzle cleaning mechanism that can uniformly clean a tip portion of
a nozzle (see, e.g., JP 6--44137, U).
[0011] The chemical liquid supply nozzle with a nozzle cleaning
mechanism comprises a nozzle block having a through hole formed
therein as the nozzle cleaning mechanism. The nozzle is inserted
into the through hole of the nozzle block, thereby causing a gap to
be formed between an outer peripheral surface of the nozzle and an
inner peripheral surface of the nozzle block.
[0012] After supplying the chemical liquid to the substrate, the
nozzle is inserted into the nozzle block, so that a cleaning liquid
is supplied to the gap between the nozzle and the nozzle block.
This causes the cleaning liquid flowing into the gap between the
nozzle and the nozzle block to flow into the tip portion of the
nozzle, so that the chemical liquid adhering to the tip portion of
the nozzle is cleaned away. As a result, the deposit is prevented
from adhering to the tip portion of the nozzle.
[0013] Even if the nozzle is cleaned with the cleaning liquid, as
described above, however, the chemical liquid may slightly remain
on a surface of the nozzle. In this case, a part of the chemical
liquid is mixed into the cleaning liquid remaining on the main
surface of the nozzle after the cleaning, and a crystal of the
chemical liquid is deposited on the nozzle as the cleaning liquid
is dried. As a result, the problems that the deposit drops on the
substrate and the supply conditions of the chemical liquid are
changed are not sufficiently solved.
SUMMARY OF THE INVENTION
[0014] An object of the invention is to provide a substrate
processing apparatus and a substrate processing method in which
processing defects in a substrate due to a deposit formed on a
nozzle are sufficiently prevented.
[0015] (1) A substrate processing apparatus according to an aspect
of the present invention comprises a nozzle that has a first flow
path having a first end opening and a second flow path having a
second end opening adjacent to the first end opening and discharges
a chemical liquid for processing a substrate from the first end
opening; a chemical liquid supply system that is connected to the
first flowpath and supplies the chemical liquid; and a suction
device that is connected to the second flow path and applies
suction through the second flow path.
[0016] In the substrate processing apparatus, the nozzle has the
first flow path having the first end opening and the second flow
path having the second end opening. The first end opening of the
first flow path and the second end opening of the second flow path
are adjacent to each other. The chemical liquid is supplied to the
first flow path from the chemical liquid supply system, and is
discharged from the first end opening. Further, the suction device
applies suction through the second flow path.
[0017] In this case, the chemical liquid remaining in the vicinity
of the first end opening is sucked in through the second flow path.
This prevents the chemical liquid from remaining in the vicinity of
the first end opening.
[0018] In a case where a deposit of the chemical liquid is formed
in the first flow path, the chemical liquid is discharged through
the first flow path from the chemical liquid supply system, and
suction is applied through the second flow path, which causes the
deposit of the chemical liquid to be cleaned away with the chemical
liquid and can prevent the chemical liquid from remaining in the
vicinity of the first end opening.
[0019] This prevents the deposit of the chemical liquid from being
formed in the vicinity of the first end opening and prevents the
formed deposit from remaining. As a result, processing defects in
the substrate due to the deposit of the chemical liquid are
sufficiently prevented.
[0020] (2) The suction device may apply suction through the second
flow path after the discharge of the chemical liquid through the
first flow path from the chemical liquid supply system is
completed.
[0021] In this case, the chemical liquid is discharged through the
first flow path from the chemical liquid supply system, which
causes the deposit in the first flow path to be cleaned away with
the chemical liquid. Further, suction is applied through the second
flow path, which can prevent the chemical liquid from remaining in
the vicinity of the first end opening.
[0022] This prevents the deposit of the chemical liquid from being
formed in the vicinity of the first end opening and prevents the
formed deposit from remaining.
[0023] (3) The suction device may apply suction through the second
flow path in a time period during which the chemical liquid is
discharged through the first flow path from the chemical liquid
supply system.
[0024] In this case, at least a part of the chemical liquid is
sucked in through the second flow path while the chemical liquid is
discharged through the first flow path. This causes the deposit in
the first flow path to be cleaned away with the chemical liquid and
can prevent the chemical liquid from remaining in the vicinity of
the first end opening. The result prevents the deposit of the
chemical liquid from being formed in the vicinity of the first end
opening and prevents the formed deposit from remaining.
[0025] (4) The substrate processing apparatus may further comprise
a first guide member that is opposed to the first end opening and
the second end opening and guides into the second end opening the
chemical liquid discharged through the first flow path.
[0026] In this case, the chemical liquid discharged through the
first flow path is guided into the second end opening by the first
guide member. This makes it easy to suck in the discharged chemical
liquid through the second flow path.
[0027] (5) The substrate processing apparatus may further comprise
an inert gas supply system that is connected to the first flow path
and supplies an inert gas.
[0028] In this case, the inert gas is discharged through the first
flow path from the inert gas supply system. Thus, the chemical
liquid remaining in the first flow path is discharged outward with
the inert gas.
[0029] In a case where the deposit of the chemical liquid is formed
in the first flow path, the deposit of the chemical liquid can be
removed by discharging the inert gas through the first flow path
from the inert gas supply system.
[0030] The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening and prevents
the formed deposit from remaining.
[0031] (6) The inert gas may be discharged through the first flow
path from the inert gas supply system after the discharge of the
chemical liquid through the first flow path from the chemical
liquid supply system is completed.
[0032] In this case, the chemical liquid is discharged through the
first flow path from the chemical liquid supply system, so that the
deposit in the first flow path is cleaned away with the chemical
liquid. Thereafter, the chemical liquid remaining in the first flow
path is discharged outward with the inert gas. As a result, the
deposit of the chemical liquid is prevented from being formed in
the vicinity of the first end opening.
[0033] (7) The suction device may apply suction through the second
flow path in a time period during which the inert gas is discharged
through the first flow path from the inert gas supply system.
[0034] In this case, at least a part of the inert gas is sucked in
through the second flow path while the inert gas is discharged
through the first flow path. This causes the deposit and the
chemical liquid in the first flow path to be discharged outward
with the inert gas while suction is applied through the second flow
path. The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening or prevents
the formed deposit from remaining. Further, the second flow path is
kept clean.
[0035] (8) The substrate processing apparatus may further comprise
an inert gas supply system that is connected to the second flow
path and supplies an inert gas.
[0036] In this case, the inert gas is discharged through the second
flow path from the inert gas supply system. Thus, the chemical
liquid remaining in the vicinity of the first end opening is
discharged outward with the inert gas.
[0037] In a case where the deposit of the chemical liquid is formed
in the vicinity of the first end opening, the deposit of the
chemical liquid can be removed by discharging the inert gas through
the second flowpath from the inert gas supply system.
[0038] The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening and prevents
the formed deposit from remaining.
[0039] Since the chemical liquid and the inert gas are respectively
discharged through the separate flow paths, the mixing of the
chemical liquid into the inert gas is restrained. This allows the
inert gas discharged from the nozzle to be used for subjecting the
substrate to drying processing. As a result, it is not necessary to
separately provide means for performing drying processing, thereby
simplifying the configuration of the substrate processing
apparatus.
[0040] (9) The substrate processing apparatus may further comprise
a rinse liquid supply system that is connected to the first flow
path and supplies a rinse liquid.
[0041] In this case, the rinse liquid is discharged through the
first flowpath from the rinse liquid supply system. This causes the
chemical liquid remaining in the first flow path to be cleaned away
with the rinse liquid.
[0042] In a case where the deposit of the chemical liquid is formed
in the first flow path, the deposit of the chemical liquid can be
removed by discharging the rinse liquid through the first flow path
from the rinse liquid supply system.
[0043] The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening or prevents
the formed deposit from remaining.
[0044] (10) The rinse liquid may be discharged through the first
flow path from the rinse liquid supply system after the discharge
of the chemical liquid through the first flow path from the
chemical liquid supply system is completed.
[0045] In this case, the chemical liquid is discharged through the
first flow path from the chemical liquid supply system, so that the
deposit in the first flow path is cleaned away with the chemical
liquid. Thereafter, the chemical liquid remaining in the first flow
path is cleaned away with the rinse liquid. The result prevents the
deposit of the chemical liquid from being formed in the vicinity of
the first end opening or prevents the formed deposit from
remaining.
[0046] (11) The suction device may apply suction through the second
flow path in a time period during which the rinse liquid is
discharged through the first flow path from the rinse liquid supply
system.
[0047] In this case, at least a part of the rinse liquid is sucked
in through the second flow path while the rinse liquid is
discharged through the first flow path. This causes the deposit and
the chemical liquid in the first flow path and the second flow path
to be cleaned away with the rinse liquid.
[0048] The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening or prevents
the formed deposit from remaining.
[0049] (12) The substrate processing apparatus may further comprise
a second guide member that is opposed to the first end opening and
the second end opening and guides into the second end opening the
rinse liquid discharged through the first flow path.
[0050] In this case, the rinse liquid discharged through the first
flow path is guided into the second end opening by the second guide
member. This makes it easy to suck in the discharged rinse liquid
through the second flow path.
[0051] (13) The substrate processing apparatus may further comprise
a rinse liquid supply system that is connected to the second flow
path and supplies a rinse liquid.
[0052] In this case, the rinse liquid is discharged through the
second flow path from the rinse liquid supply system. This causes
the chemical liquid remaining in the vicinity of the first end
opening of the first flow path to be cleaned away with the rinse
liquid.
[0053] In a case where the deposit of the chemical liquid is formed
in the vicinity of the first end opening, the deposit of the
chemical liquid can be removed by discharging the rinse liquid
through the second flow path from the rinse liquid supply
system.
[0054] The result prevents the deposit of the chemical liquid from
being formed in the vicinity of the first end opening or prevents
the formed deposit from remaining.
[0055] Since the chemical liquid and the rinse liquid are
respectively discharged through the separate flow paths, the mixing
of the chemical liquid into the rinse liquid is restrained. If pure
water is used as the rinse liquid discharged from the nozzle,
therefore, the rinse liquid can be used for subjecting the
substrate to rinsing processing. As a result, it is not necessary
to separately provide means for performing rinsing processing is
eliminated, thereby simplifying the configuration of the substrate
processing apparatus.
[0056] (14) The substrate processing apparatus may further comprise
an inert gas supply system that is connected to the first flow path
and supplies an inert gas, and a rinse liquid supply system that is
connected to the first flow path and supplies a rinse liquid, the
suction device may apply suction through the second flow path in a
time period during which the chemical liquid is discharged through
the first flow path from the chemical liquid supply system, the
suction device may apply suction through the second flow path in a
time period during which the rinse liquid is discharged through the
first flow path from the rinse liquid supply system, and the
suction device may apply suction through the second flow path in a
time period during which an inert gas is discharged through the
first flow path from the inert gas supply system.
[0057] In this case, a part of the chemical liquid is sucked in
through the second flow path while the chemical liquid is
discharged through the first flow path. This causes the deposit in
the first flow path and the second flow path to be cleaned away
with the chemical liquid and can prevent the chemical liquid from
remaining in the vicinity of the first and second end openings.
[0058] A part of the rinse liquid is sucked in through the second
flow path while the rinse liquid is discharged through the first
flow path. This causes the chemical liquid remaining in the first
flow path and the second flow path to be cleaned away with the
rinse liquid.
[0059] Furthermore, a part of the inert gas is sucked in through
the second flow path while the inert gas is discharged through the
first flow path. This causes the chemical liquid or the rinse
liquid remaining in the first flow path to be discharged outward
with the inert gas and causes the chemical liquid or the rinse
liquid remaining in the second flow path to be sucked in.
[0060] This allows the first and the second flow paths of the
nozzle to be subjected to the rinsing processing and the drying
processing. The result prevents the deposit of the chemical liquid
from being formed in the vicinity of the first end opening and
prevents the formed deposit from remaining.
[0061] (15) A substrate processing apparatus according to another
aspect of the present invention comprises a nozzle that has a first
flow path having a first end opening and a second flow path having
a second end opening adjacent to the first end opening and
discharges a chemical liquid for processing a substrate from the
first end opening; a chemical liquid supply system that is
connected to the first flow path and supplies the chemical liquid;
a suction device that is connected to the first flow path and
applies suction through the first flow path; and an inert gas
supply system that is connected to the second flow path and
supplies an inert gas.
[0062] In the substrate processing apparatus, the nozzle has the
first flow path having the first end opening and the second flow
path having the second end opening. The first end opening of the
first flow path and the second end opening of the second flow path
are adjacent to each other. The chemical liquid is supplied to the
first flow path from the chemical liquid supply system, and the
chemical liquid is discharged from the first end opening. The inert
gas is discharged through the second flow path from the inert gas
supply system. Further, the suction device applies suction through
the first flow path.
[0063] In this case, the chemical liquid remaining within the first
flow path or in the vicinity of the first end opening is sucked in
through the first flow path. This prevents the chemical liquid from
remaining within the first flow path or in the vicinity of the
first end opening.
[0064] In a case where a deposit of the chemical liquid is formed
within the first flow path or in the vicinity of the first end
opening, the chemical liquid is discharged through the first flow
path from the chemical liquid supply system, and suction is applied
through the first flow path, which causes the deposit of the
chemical liquid to be cleaned away with the chemical liquid and can
prevent the chemical liquid from remaining within the first flow
path or in the vicinity of the first end opening.
[0065] The inert gas is discharged through the second flow path
from the inert gas supply system. This causes the chemical liquid
remaining in the vicinity of the first end opening to be discharged
outward with the inert gas.
[0066] This prevents the deposit of the chemical liquid from being
formed in the vicinity of the first end opening and prevents the
formed deposit from remaining. As a result, processing defects in
the substrate due to the deposit of the chemical liquid are
sufficiently prevented.
[0067] Since the chemical liquid and the inert gas are respectively
discharged through the separate flow paths, the mixing of the
chemical liquid into the inert gas can be restrained. This allows
the inert gas discharged from the nozzle to be used for subjecting
the substrate to drying processing. As a result, it is not
necessary to separately provide means for performing drying
processing is eliminated, thereby simplifying the configuration of
the substrate processing apparatus.
[0068] (16) The substrate processing apparatus may further comprise
a rinse liquid supply system that is connected to at least one of
the first flow path and the second flow path and supplies a rinse
liquid.
[0069] In this case, the rinse liquid is discharged through at
least one of the first flow path and the second flow path from the
rinse liquid supply system. This causes the chemical liquid in at
least one of the flow paths to be cleaned away with the rinse
liquid. As a result, the deposit of the chemical liquid is
prevented from being formed in the vicinity of the end opening of
at least one of the flow paths.
[0070] In a case where the deposit of the chemical liquid is formed
in at least one of the flow paths, the deposit of the chemical
liquid can be cleaned away by discharging the rinse liquid through
at least one of the flow paths from the rinse liquid supply
system.
[0071] (17) A substrate processing apparatus according to still
another aspect of the present invention comprises a nozzle that has
a first flow path having a first end opening and a second flow path
having a second end opening adjacent to the first end opening and
discharges a chemical liquid for processing a substrate from the
first end opening; a chemical liquid supply system that is
connected to the first flow path and supplies the chemical liquid;
a suction device that is connected to the first flow path and
applies suction through the first flow path; and a rinse liquid
supply system that is connected to the second flow path and
supplies a rinse liquid.
[0072] In the substrate processing apparatus, the nozzle has the
first flow path having the first end opening and the second flow
path having the second end opening. The first end opening of the
first flow path and the second end opening of the second flow path
are adjacent to each other. The chemical liquid is supplied to the
first flow path from the chemical liquid supply system, and the
chemical liquid is discharged from the first end opening. The rinse
liquid is supplied to the second flow path from the rinse liquid
supply system, and the rinse liquid is discharged from the second
end opening. Further, the suction device applies suction through
the first flow path.
[0073] In this case, the chemical liquid remaining within the first
flow path or in the vicinity of the first end opening is sucked in
through the first flow path. This prevents the chemical liquid from
remaining within the first flow path or in the vicinity of the
first end opening.
[0074] In a case where a deposit of the chemical liquid is formed
within the first flow path or in the vicinity of the first end
opening, the chemical liquid is discharged through the first flow
path from the chemical liquid supply system, and suction is applied
through the first flow path, which causes the deposit of the
chemical liquid to be cleaned away with the chemical liquid and can
prevent the chemical liquid from remaining within the first flow
path or in the vicinity of the first end opening.
[0075] The rinse liquid is discharged through the second flow path
from the rinse liquid supply system. This causes the chemical
liquid remaining in the vicinity of the first end opening to be
cleaned away with the rinse liquid.
[0076] This prevents the deposit of the chemical liquid from being
formed in the vicinity of the first end opening and prevents the
formed deposit from remaining. As a result, processing defects in
the substrate due to the deposit of the chemical liquid are
sufficiently prevented.
[0077] Since the chemical liquid and the rinse liquid are
respectively discharged through the separate flow paths, the mixing
of the chemical liquid into the rinse liquid can be restrained. If
pure water is used as the rinse liquid discharged from the nozzle,
therefore, the rinse liquid can be used for subjecting the
substrate to rinsing processing. As a result, it is not necessary
to separately provide means for performing rinsing processing is
eliminated, thereby simplifying the configuration of the substrate
processing apparatus.
[0078] (18) The substrate processing apparatus may further comprise
an inert gas supply system that is connected to at least one of the
first flow path and the second flow path and supplies an inert
gas.
[0079] In this case, the inert gas is discharged through at least
one of the first flow path and the second flow path from the inert
gas supply system. Thus, the chemical liquid or the rinse liquid
remaining in at least one of the flow paths is removed with the
inert gas. As a result, the deposit of the chemical liquid is
prevented from being formed in the vicinity of the end opening of
at least one of the flow paths.
[0080] In a case where the deposit of the chemical liquid is formed
in at least one of the flow paths, the deposit of the chemical
liquid can be removed by discharging the inert gas through at least
one of the flow paths from the inert gas supply system.
[0081] (19) Either one of the first end opening and the second end
opening may be provided so as to surround the other end
opening.
[0082] In this case, the chemical liquid or the deposit in the
vicinity of one of the end openings positioned at the center can be
reliably sucked in by applying suction through either one of the
first and second flow paths. The chemical liquid discharged through
the first flow path is easily sucked in through the second flow
path.
[0083] (20) Either one of the first flow path and the second flow
path may be formed within a tubular first member, and the other
flow path may be formed between the first member and a tubular
second member having an inner peripheral surface surrounding an
outer peripheral surface of the first member.
[0084] In this case, the chemical liquid or the deposit of the
chemical liquid adhering to the outer peripheral surface of the
first member can be removed by applying suction through one of the
first and second flow paths formed between the second member and
the first member.
[0085] (21) A tip of the second member may project farther than a
tip of the first member. In this case, the chemical liquid or the
deposit in the vicinity of one of the end openings positioned at
the center can be reliably sucked in by applying suction through
either one of the first and second flow paths. The chemical liquid
discharged through the first flow path is easily sucked in through
the second flow path.
[0086] (22) The second member may be so formed that the inner
peripheral surface at its tip portion progressively comes closer to
the outer peripheral surface of the first member toward its
tip.
[0087] In this case, the chemical liquid or the deposit in the
vicinity of one of the end openings positioned at the center can be
more reliably sucked in by applying suction through either one of
the first and second flow paths. The chemical liquid discharged
through the first flow path is easily sucked in through the second
flow path.
[0088] (23) A substrate processing method according to a further
aspect of the present invention comprises the steps of positioning
a nozzle having a first flow path having a first end opening and a
second flow path having a second end opening adjacent to the first
end opening above a substrate; discharging a chemical liquid
through the first flow path after the step of positioning the
nozzle above the substrate; and applying suction through the second
flow path during or after the step of discharging the chemical
liquid.
[0089] In the substrate processing method, the nozzle has the first
flow path having the first end opening and the second flow path
having the second end opening. The first end opening of the first
flow path and the second end opening of the second flow path are
adjacent to each other. The chemical liquid is discharged through
the first flow path. In a time period during which the chemical
liquid is discharged or after the discharge of the chemical liquid
is completed, suction is applied through the second flow path.
[0090] In this case, the chemical liquid remaining in the vicinity
of the first end opening is sucked in through the second flow path.
This prevents the chemical liquid from remaining in the vicinity of
the first end opening.
[0091] In a case where a deposit of the chemical liquid is formed
in the first flowpath, the chemical liquid is discharged through
the first flow path, and suction is applied through the second flow
path, which causes the deposit of the chemical liquid to be cleaned
away with the chemical liquid and can prevent the chemical liquid
from remaining in the vicinity of the first end opening.
[0092] This prevents the deposit of the chemical liquid from being
formed in the vicinity of the first end opening or prevents the
formed deposit from remaining. As a result, processing defects in
the substrate due to the deposit of the chemical liquid are
sufficiently prevented.
[0093] (24) The substrate processing method may further comprise
the step of discharging an inert gas through at least one of the
first flow path and the second flow path during or after the step
of discharging the chemical liquid.
[0094] In this case, the inert gas is discharged through at least
one of the first flow path and the second flow path. This causes
the chemical liquid remaining in the vicinity of the first end
opening to be discharged outward with the inert gas.
[0095] (25) The substrate processing method may further comprise
the step of discharging a rinse liquid through at least one of the
first flow path and the second flow path during or after the step
of discharging the chemical liquid.
[0096] In this case, the rinse liquid is discharged through at
least one of the first flow path and the second flow path. This
causes the chemical liquid remaining in the vicinity of the first
end opening to be cleaned away with the rinse liquid.
[0097] (26) The step of discharging the chemical liquid may
comprise the step of discharging the chemical liquid toward the
substrate through the first flow path to process the substrate.
[0098] In this case, the substrate can be subjected to
predetermined processing by discharging the chemical liquid toward
the substrate. This causes the substrate to be subjected to
predetermined processing in the step of discharging the chemical
liquid.
[0099] (27) The substrate processing method may further comprise a
nozzle retracting step for retracting the nozzle from above the
substrate after the step of processing the substrate, and the step
of discharging the chemical liquid may further comprise the step of
discharging the chemical liquid through the first flow path after
the nozzle retracting step, to clean a deposit of the chemical
liquid adhering to the vicinity of the first end opening of the
nozzle.
[0100] In this case, the nozzle is retracted from above the
substrate after the chemical liquid is discharged to the substrate
from the nozzle. Thereafter, the chemical liquid is discharged
through the first flow path of the nozzle, so that the deposit of
the chemical liquid adhering to the vicinity of the first end
opening is cleaned away. The discharge of the chemical liquid for
cleaning away the deposit of the chemical liquid is thus performed
outside the substrate. This prevents the removed deposit of the
chemical liquid from dropping on the substrate, thereby preventing
processing defects in the substrate.
[0101] Other features, elements, characteristics, and advantages of
the present invention will become more apparent from the following
description of preferred embodiments of the present invention with
reference to the attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0102] FIG. 1 is a plan view of a substrate processing apparatus
according to an embodiment of the present invention;
[0103] FIG. 2 is a diagram for explaining the configuration of a
cleaning processing unit in a substrate processing apparatus
according to an embodiment of the present invention;
[0104] FIG. 3 is a schematic view showing the detailed
configuration of a multifunctional nozzle and a supply suction
system;
[0105] FIG. 4 is a diagram for explaining a first example of the
operations of the multifunctional nozzle;
[0106] FIG. 5 is a diagram for explaining a second example of the
operations of the multifunctional nozzle;
[0107] FIG. 6 is a diagram for explaining a third example of the
operations of the multifunctional nozzle;
[0108] FIG. 7 is a diagram for explaining a fourth example of the
operations of the multifunctional nozzle;
[0109] FIG. 8 is a diagram showing another example of the
multifunctional nozzle;
[0110] FIG. 9 is a diagram showing still another example of the
multifunctional nozzle; and
[0111] FIG. 10 is a cross-sectional view showing the details of a
waiting pot and a liquid guide plate.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0112] A substrate processing apparatus according to embodiments of
the present invention will be now described with reference to the
drawings.
[0113] In the following description, a substrate refers to a
semiconductor wafer, a glass substrate for a liquid crystal
display, a glass substrate for a PDP (Plasma Display Panel), a
glass substrate for a photo mask, a glass substrate for an optical
disk, or the like.
(1) CONFIGURATION OF SUBSTRATE PROCESSING APPARATUS
[0114] FIG. 1 is a plan view of a substrate processing apparatus
according to an embodiment of the present invention. As shown in
FIG. 1, a substrate processing apparatus 100 has processing regions
A and B, and a transport region C between the processing regions A
and B.
[0115] A control unit 4, fluid boxes 2a and 2b, a cleaning
processing units 5a and 5b are arranged in the processing region
A.
[0116] Each of the fluid boxes 2a and 2b shown in FIG. 1 stores
fluid-related equipment such as pipes, joints, valves, flow meters,
regulators, pumps, temperature controllers, and chemical liquid
storage tanks, related to supply of a chemical liquid and pure
water to the cleaning processing units 5a and 5b and discard
(drain) thereof from the cleaning processing units 5a and 5b. The
specific example of the configuration of the fluid boxes 2a and 2b
will be described later.
[0117] In the cleaning processing units 5a and 5b, cleaning
processing with a chemical liquid (hereinafter referred to as
chemical liquid processing) and cleaning processing with pure water
(hereinafter referred to as rinsing processing) are performed. In
the present embodiment, the chemical liquid used in the cleaning
processing units 5a and 5b is a solution mixture of BHF and
phosphoric acid.
[0118] Fluid boxes 2c and 2d and cleaning processing units 5c and
5d are arranged in the processing region B. The fluid boxes 2c and
2d and the cleaning processing units 5c and 5d respectively have
the same configurations as those of the fluid boxes 2a and 2b and
the cleaning processing units 5a and 5b, and the cleaning
processing units 5a and 5d respectively perform the same processing
as that of the cleaning processing units 5a and 5b.
[0119] The cleaning processing units 5a 5b, 5c, and 5d are
hereinafter generically referred to as a processing unit. A
substrate transport robot CR is provided in the transport region
C.
[0120] At one end of each of the processing regions A and B, an
indexer ID for carrying in and out substrates W is arranged. An
indexer robot IR is provided inside the indexer ID. Carriers 1 that
respectively store the substrates W are placed on the indexer
ID.
[0121] The indexer robot IR in the indexer ID moves in a direction
indicated by an arrow U, to take out the substrate W from the
carrier 1 and transfer the substrate W to the substrate transport
robot CR, while receiving the substrate W that has been subjected
to a series of processing from the substrate transport robot CR and
returning the substrate W to the carrier 1.
[0122] The substrate transport robot CR transports the substrate W
transferred from the indexer robot IR to the designated processing
unit, or transports the substrate W received from the processing
unit to the other processing unit or the indexer robot IR.
[0123] In the present embodiment, after the substrate W is
subjected to chemical liquid processing in any one of the cleaning
processing units 5a to 5d, the substrate W is carried out of the
cleaning processing units 5a to 5d by the substrate transport robot
CR and is carried into the carrier 1 through the indexer robot
IR.
[0124] The control unit 4 comprises a computer or the like
including a CPU (Central Processing Unit), to control the operation
of each of the processing units in the processing regions A and B,
the operation of the substrate transport robot CR in the transport
region C, and the operation of the indexer robot IR in the indexer
ID. The details of the control unit 4 will be described later.
(2) CONFIGURATION OF CLEANING PROCESSING UNIT
[0125] FIG. 2 is a diagram for explaining the configuration of
cleaning processing units 5a to 5d in the substrate processing
apparatus 100 according to an embodiment of the present
invention.
[0126] As shown in FIG. 2, each of the cleaning processing units 5a
to 5d comprises a spin chuck 21 for horizontally holding the
substrate W as well as rotating the substrate W around a vertical
rotation shaft passing through the center of the substrate W.
[0127] The spin chuck 21 is secured to an upper end of a rotation
shaft 25 which is rotated by a chuck rotation-driving mechanism 36.
A suction path (not shown) is formed in the spin chuck 21. Air
inside the suction path is exhausted with the substrate W placed on
the spin chuck 21, to adsorb a lower surface of the substrate W on
the spin chuck 21 under vacuum, so that the substrate W can be held
in a horizontal attitude.
[0128] A motor 60 is provided outside the spin chuck 21. A rotation
shaft 61 is connected to the motor 60. An arm 62 is connected to
the rotation shaft 61 so as to extend in the horizontal direction,
and a multifunctional nozzle 50 is provided at a tip of an arm 62.
The multifunctional nozzle 50 has a double-pipe structure, and has
two flow paths, that is, an inner flow path and an outer flow path.
The details of the configuration of the multifunctional nozzle 50
will be described later.
[0129] A cup-shaped waiting pot 65 is provided at a waiting
position outside the spin chuck 21. A drain pipe 80 for draining
pure water to a drain processing device (not shown) and a recovery
pipe 81 for introducing a chemical liquid to a recovery processing
device (not shown) for recovering a chemical liquid are connected
to the waiting pot 65.
[0130] When the substrate W is not processed by the multifunctional
nozzle 50, the multifunctional nozzle 50 waits above the waiting
pot 65.
[0131] The motor 60 causes the rotation shaft 61 to rotate while
causing the arm to swing, which causes the multifunctional nozzle
50 to move between an area above the waiting pot 65 and an area
above the substrate W held on the spin chuck 21.
[0132] A supply suction pipe 63 is provided so as to communicate
with the inner flow path of the multifunctional nozzle 50. One end
of the supply suction pipe 63 is connected to the multifunctional
nozzle 50, and the other end thereof is connected to a supply
suction system R1 provided in the fluid boxes 2a to 2d (see FIG.
1).
[0133] A supply suction pipe 64 is provided so as to communicate
with the outer flow path of the multifunctional nozzle 50. One end
of the supply suction pipe 64 is connected to the multifunctional
nozzle 50, and the other end thereof is connected to a supply
suction system R2 provided in the fluid boxes 2a to 2d.
[0134] The supply suction pipes 63 and 64 pass through the motor
60, the rotation shaft 61, and the arm 62.
[0135] A motor 71 is provided outside the spin chuck 21. A rotation
shaft 72 is connected to the motor 71. An arm 73 is connected to
the rotation shaft 72 so as to extend in the horizontal direction,
and a nozzle 70 for rinsing processing is provided at a tip of the
arm 73.
[0136] The motor 71 causes the rotation shaft 72 to rotate while
causing the arm 73 to swing, which causes the nozzle 70 to move to
above the substrate W held on the spin chuck 21.
[0137] A supply pipe 74 for rinsing processing is provided so as to
pass through the motor 71, the rotation shaft 72, and the arm 73.
The supply pipe 74 is connected to a pure water supply source R3
provided in the fluid boxes 2a to 2d through a valve Vc. By
controlling the opening of the valve Vc, the amount of pure water
supplied to the supply pipe 74 can be adjusted.
[0138] The pure water is supplied to the nozzle 70 from the pure
water supply source R3 through the supply pipe 74. This allows the
pure water to be supplied to the surface of the substrate W.
[0139] The multifunctional nozzle 50 moves to a processing position
above the center of the substrate W when supplying the chemical
liquid onto the substrate W, while being retracted to the waiting
position when supplying the pure water to the surface of the
substrate W.
[0140] The nozzle 70 is retracted to the waiting position when
supplying the chemical liquid onto the substrate W, while moving to
the processing position above the center of the substrate W when
supplying the pure water onto the substrate W.
[0141] The substrate W held on the spin chuck 21 is stored in a
processing cup 23. A cylindrical partition wall 33 is provided
inside the processing cup 23. A drain space 31 for draining the
pure water used for processing the substrate W is formed so as to
surround the spin chuck 21. Further, a recovery space 32 for
recovering the chemical liquid used for processing the substrate W
is formed between the processing cup 23 and the partition wall 33
so as to surround the drain space 31.
[0142] A drain pipe 34 for draining the pure water to the drain
processing device (not shown) is connected to the drain space 31. A
recovery pipe 35 for introducing the chemical liquid into the
recovery processing device (not shown) is connected to the recovery
space 32.
[0143] A guard 24 is provided above the processing cup 23 for
preventing the chemical liquid or the pure water from the substrate
W from being splashed outward. The guard 24 is shaped to be
rotationally-symmetric with respect to the rotation shaft 25. An
annular-shaped liquid drain guide groove 41 with a V-shaped cross
section is formed inwardly at an upper end of the guard 24.
[0144] Furthermore, a recovery liquid guide 42 having an inclined
surface that is inclined outwardly and downwardly is formed
inwardly at a lower end of the guard 24. A partition wall housing
groove 43 for receiving the partition wall 33 of the processing cup
23 is formed in the vicinity of an upper end of the recovery liquid
guide 42.
[0145] This guard 24 is provided with a guard lifting mechanism
(not shown) composed of a ball-screw mechanism or the like. The
guard lifting mechanism moves the guard 24 upward and downward
between a recovery position in which the recovery liquid guide 42
is opposed to outer edges of the substrate W held on the spin chuck
21 and a drain position in which the liquid drain guide groove 41
is opposed to the outer edges of the substrate W held on the spin
chuck 21. When the guard 24 is in the recovery position (i.e., the
position of the guard 24 shown in FIG. 2), the chemical liquid
splashed outward from the substrate W is introduced into the
recovery space 32 by the recovery liquid guide 42, and then
recovered through the recovery pipe 35. On the other hand, when the
guard 24 is in the drain position, the pure water splashed outward
from the substrate W is introduced into the drain space 31 by the
liquid drain guide groove 41, and then drained through the drain
pipe 34. The foregoing configuration causes the pure water to be
drained and the chemical liquid to be recovered.
(3) DETAILED CONFIGURATION OF MULTIFUNCTIONAL NOZZLE AND SUPPLY
SUCTION SYSTEM
[0146] The detailed configuration of the multifunctional nozzle 50,
the supply suction system R1, and the supply suction system R2 will
be then described.
[0147] FIG. 3 is a schematic view showing the detailed
configuration of the multifunctional nozzle 50, the supply suction
system R1, and the supply suction system R2.
[0148] As shown in FIG. 3, the multifunctional nozzle 50 has a
double-pipe structure comprising a cylindrical inner pipe 50A and a
cylindrical outer pipe 50B. An inner flow path 50a is formed in the
inner pipe 50A, and a cylindrical outer flow path 50b is formed
between an outer peripheral surface of the inner pipe 50A and an
inner peripheral surface of the outer pipe 50B. A discharge port
51a communicating with the inner flow path 50a and a discharge port
51b communicating with the outer flow path 50b are formed at a tip
of the multifunctional nozzle 50. The inner flow path 50a is
connected to the supply suction system R1 through the supply
suction pipe 63. The outer flow path 50b is connected to the supply
suction system R2 through the supply suction pipe 64.
[0149] The supply suction system R1 has a chemical liquid supply
source R1, a rinse liquid supply source R12, an inert gas supply
source R13, and an ejector E1. The supply suction pipe 63 branches
into pipes 63a, 63b, 63c, and 63d, which are respectively connected
to the chemical liquid supply source R11, the rinse liquid supply
source R12, the inert gas supply source R13, and the ejector E1
through valves Va1, Va2, Va3, and Va4.
[0150] The opening or closing the valves Va1, Va2, Va3, and Va4 is
controlled, thereby making it possible to selectively supply the
chemical liquid from the chemical liquid supply source R11, supply
the rinse liquid from the rinse liquid supply source R12, supply
the inert gas from the inert gas supply source R13, and apply
suction through the inner flow path 50a of the multifunctional
nozzle 50 by the ejector E1. In the present embodiment, BHF is used
as the chemical liquid, pure water is used as the rinse liquid, and
N.sub.2 (nitrogen) gas is used as the inert gas.
[0151] A discharge pipe E11 is connected to the ejector E1. The
chemical liquid, the rinse liquid, or the like sucked in through
the supply suction pipe 63 and the pipe 63d by the ejector E1 is
introduced into the drain processing device or the recovery
processing device through the discharge pipe E11.
[0152] The respective amounts of the chemical liquid, the rinse
liquid, and the inert gas to be supplied as well as a suction force
produced by the ejector E1 can be adjusted by controlling the
respective openings of the valves Va1, Va2, Va3, and Va4.
[0153] The supply suction system R2 has a chemical liquid supply
source R21, a rinse liquid supply source R22, an inert gas supply
source R23, and an ejector E2. The supply suction pipe 64 branches
into pipes 64a, 64b, 64c, and 64d, which are respectively connected
to the chemical liquid supply source R21, the rinse liquid supply
source R22, the inert gas supply source R23, and the ejector E2
through valves Vb1, Vb2, Vb3, and Vb4.
[0154] The opening or closing the valves Vb1, Vb2, Vb3, and Vb4 is
controlled, thereby making it possible to selectively supply the
chemical liquid from the chemical liquid supply source R21, supply
the rinse liquid from the rinse liquid supply source R22, supply
the inert gas from the inert gas supply source R23, and apply
suction through the multifunctional nozzle 50 by the ejector
E2.
[0155] The respective amounts of the chemical liquid, the rinse
liquid, and the inert gas to be supplied as well as a suction force
produced by the ejector E2 can be adjusted by controlling the
respective openings of the valves Vb1, Vb2, Vb3, and Vb4.
[0156] A discharge pipe E21 is connected to the ejector E2. The
chemical liquid, the rinse liquid, or the like sucked in through
the supply suction pipe 64 and the pipe 64d by the ejector E2 is
introduced into the drain processing device or the recovery
processing device through the discharge pipe E21.
[0157] Such a configuration makes it possible to selectively supply
the chemical liquid, supply the rinse liquid, supply the inert gas,
and suck in through the inner flow path 50a and the outer flow path
50b of the multifunctional nozzle 50 in the present embodiment.
[0158] (4) OPERATIONS OF CLEANING PROCESSING UNIT
[0159] The operations of the cleaning processing units 5a to 5d
having the above-mentioned configuration will be then described
with reference to FIGS. 2 and 3. Note that the operation of each of
components in the cleaning processing units 5a to 5d described
below is controlled by the control unit 4 shown in FIG. 1.
[0160] When the substrate W is carried into the cleaning processing
units 5a to 5d, the guard 24 is lowered, and the substrate
transport robot CR places the substrate W on the spin chuck 21. The
substrate W placed on the spin chuck 21 is held therein by
suction.
[0161] Then, the guard 24 is raised to the above-mentioned recovery
position or drain position while the multifunctional nozzle 50
moves to the processing position above the center of the substrate
W from the waiting position. Thereafter, the rotation shaft 25
rotates, which causes the substrate W held on the spin chuck 21 to
rotate. Thereafter, the chemical liquid is discharged onto the
upper surface of the substrate W from the multifunctional nozzle
50. In the present embodiment, the chemical liquid is discharged
through the inner flow path 50a of the multifunctional nozzle 50.
This causes the substrate W to be subjected to the chemical liquid
processing. After the chemical liquid processing of the substrate W
is terminated, the multifunctional nozzle 50 moves to the waiting
position.
[0162] The nozzle 70 then moves to above the center of the
substrate W. The pure water is then discharged from the nozzle 70.
This causes the chemical liquid on the substrate W to be cleaned
away.
[0163] The supply of the pure water is then stopped, so that the
revolution speed of the rotation shaft 25 increases. This causes a
great centrifugal force to act on the pure water on the substrate
W, so that the pure water on the substrate W is removed.
[0164] Then, the nozzle 70 is retracted to a predetermined position
while the rotation of the rotation shaft 25 is stopped. Thereafter,
the guard 24 is lowered while the substrate transport robot CR
shown in FIG. 1 carries the substrate W out of the cleaning
processing units 5a to 5d. The processing operation in the cleaning
processing units 5a to 5d is thus terminated.
[0165] It is preferred that the position of the guard 24 during the
chemical liquid processing and the rinsing processing of the
substrate W is suitably changed according to the necessity of
recovering the chemical liquid or draining the pure water.
(5) EXAMPLES OF CLEANING OPERATION BY MULTIFUNCTIONAL NOZZLE
[0166] As described in the foregoing, in the cleaning processing
units 5a to 5d, the chemical liquid is discharged to the substrate
W through the inner flow path 50a of the multifunctional nozzle 50,
so that the substrate W is subjected to the chemical liquid
processing. In this case, after the substrate W is subjected to the
chemical liquid processing, the chemical liquid adhering to a tip
portion and an inner peripheral surface of the inner pipe 50A of
the multifunctional nozzle 50 is dried, so that a deposit of the
chemical liquid is formed on the multifunctional nozzle 50.
Particularly, BHF containing ammonium fluoride serving as a salt
obtained by neutralization of an acid and an alkali is used as the
chemical liquid in the present embodiment, so that a deposit
composed of the salt is easily formed. The deposit causes
processing defects in the substrate W when it drops on the
substrate W from the multifunctional nozzle 50 or it changes the
supply conditions of the chemical liquid supplied to the substrate
W from the multifunctional nozzle 50.
[0167] In the present embodiment, it is possible to prevent the
deposit from being formed or remove the formed deposit by
performing the following operations using the multifunctional
nozzle 50.
(5-1) First Example of Operations
[0168] FIG. 4 is a diagram for explaining a first example of the
operations of the multifunctional nozzle 50.
[0169] When the substrate W is subjected to the chemical liquid
processing, the chemical liquid is supplied to the substrate W
through the inner flow path 50a of the multifunctional nozzle 50,
as shown in FIG. 4(a).
[0170] After an elapse of a predetermined time period, the supply
of the chemical liquid is stopped, and the multifunctional nozzle
50 moves to the waiting position. At this time, the chemical liquid
adheres to the tip portion and the inner peripheral surface of the
inner pipe 50A of the multifunctional nozzle 50, as shown in FIG.
4(b).
[0171] Therefore, the ejector E2 (see FIGS. 2 and 3) applies
suction through the outer flow path 50 of the multifunctional
nozzle 50, as shown in FIG. 4(c). This causes the chemical liquid
adhering to the tip portion of the inner pipe 50A to be sucked in
through the outer flow path 50b by the ejector E2 and discharged.
As a result, the chemical liquid adhering to the tip portion of the
inner pipe 50A is removed.
[0172] Alternatively, the ejectors E1 and E2 respectively apply
suction through the inner flow path 50a and the outer flow path 50b
of the multifunctional nozzle 50, as shown in FIG. 4(d). This
causes the chemical liquid adhering to the tip portion of the inner
pipe 50A to be sucked in through the inner flow path 50a and the
outer flow path 50b, respectively, by the ejectors E1 and E2 and
discharged. The chemical liquid adhering to the inner peripheral
surface of the inner pipe 50A is sucked in by the ejector E1 and is
discharged. As a result, the chemical liquid adhering to the tip
portion and the inner peripheral surface of the inner pipe 50A is
removed.
[0173] Alternatively, the inert gas is discharged through the inner
flow path 50a of the multifunctional nozzle 50 while the ejector E2
applies suction through the outer flow path 50b, as shown in FIG.
4(e). This causes the chemical liquid adhering to the inner
peripheral surface of the inner pipe 50A to be discharged outward
from the multifunctional nozzle 50 with the inert gas. The chemical
liquid adhering to the tip portion of the inner pipe 50A to be
sucked in through the outer flow path 50b by the ejector E2 and
discharged. As a result, the chemical liquid adhering to the tip
portion and the inner peripheral surface of the inner pipe 50A is
removed.
[0174] The chemical liquid adhering to the tip portion or the inner
peripheral surface of the inner pipe 50A of the multifunctional
nozzle 50 is thus removed after the substrate W is subjected to the
chemical liquid processing, thereby preventing a deposit from being
formed.
[0175] In the examples shown in FIGS. 4(c), 4(d), and 4(e), the
chemical liquid discharged from the ejector E1 or the ejector E2
may be returned to the chemical liquid supply source R11 shown in
FIG. 3 through the recovery processing device. This allows a
high-cost chemical liquid to be utilized again.
[0176] Furthermore, after the operation shown in FIG. 4(a) and
before the operations shown in FIGS. 4(c) to 4(e), the discharge of
the chemical liquid through the inner flow path 50a above the
waiting pot 65 (hereinafter referred to as on-pot chemical liquid
discharge) may be performed in a state where the deposit of the
chemical liquid is formed on the multifunctional nozzle 50. In this
case, it is possible to clean away the deposit with the chemical
liquid while preventing the deposit from being formed again.
(5-2) Second Example of Operations
[0177] FIG. 5 is a diagram for explaining a second example of the
operations of the multifunctional nozzle 50.
[0178] The chemical liquid is supplied to the substrate W through
the inner flow path 50a of the multifunctional nozzle 50, so that
the substrate W is subjected to the chemical liquid processing, as
shown in FIG. 5(a).
[0179] After an elapse of a predetermined time period, the supply
of the chemical liquid is stopped, and the multifunctional nozzle
50 moves to the waiting position. The rinse liquid is then
discharged into the waiting pot 65 shown in FIG. 2 through the
inner flow path 50a of the multifunctional nozzle 50, as shown in
FIG. 5(b), above the waiting pot 65. This causes the chemical
liquid adhering to the tip portion and the inner peripheral surface
of the inner pipe 50A of the multifunctional nozzle 50 to be
cleaned away with the rinse liquid. The rinse liquid discharged
into the waiting pot 65 is introduced to the drain processing
device (not shown) through the liquid drain pipe 80.
[0180] Subsequently, the ejector E1 applies suction through the
outer flow path 50b of the multifunctional nozzle 50, as shown in
FIG. 5(c). This causes the rinse liquid adhering to the tip portion
of the inner pipe 50A to be sucked in through the outer flow path
50b by the ejector E2 and discharged. As a result, the rinse liquid
adhering to the tip portion of the inner pipe 50A is removed.
[0181] Alternatively, the ejector E1 applies suction through the
inner flow path 50a and the outer flow path 50b of the
multifunctional nozzle 50, as shown in FIG. 5(d). This causes the
rinse liquid adhering to the tip portion of the inner pipe 50A to
be sucked in through the inner flow path 50a and the outer flow
path 50b, respectively, by the ejector E1 and the ejector E2 and
discharged. The rinse liquid adhering to the inner peripheral
surface of the inner pipe 50A is sucked in by the ejector E1 and
discharged. As a result, the rinse liquid adhering to the tip
portion and the inner peripheral surface of the inner pipe 50A is
removed.
[0182] Alternatively, the inert gas is discharged through the inner
flow path 50a of the multifunctional nozzle 50 while the ejector E2
applies suction through the outer flow path 50, as shown in FIG.
5(e). This causes the rinse liquid adhering to the tip portion and
the inner peripheral surface of the inner pipe 50A to be discharged
outward from the multifunctional nozzle 50 with the inert gas. This
causes the rinse liquid adhering to the tip portion of the inner
pipe 50A to be sucked in through the outer flow path 50b by the
ejector E2 and discharged. As a result, the rinse liquid adhering
to the tip portion and the inner peripheral surface of the inner
pipe 50A is removed.
[0183] In the example shown in FIG. 5, the rinse liquid is
discharged through the innerflow path 50a of the multifunctional
nozzle 50. This allows the chemical liquid adhering to the tip
portion and the inner peripheral surface of the inner pipe 50A to
be cleaned away with the rinse liquid.
[0184] Even if the chemical liquid cannot be sufficiently cleaned
away with the rinse liquid, the chemical liquid remaining in the
rinse liquid adhering to the tip portion or the inner peripheral
surface of the inner pipe 50A is removed by suction or discharge of
the inert gas, which can prevent the chemical liquid from being
deposited.
[0185] Furthermore, after the operation shown in FIG. 5(a) and
before the operation shown in FIG. 5(b), the on-pot chemical liquid
discharge, described in the first example of operations, may be
performed. In this case, it is possible to clean away the deposit
with the chemical liquid while preventing the deposit from being
formed again. In a case where the amount of the deposit of the
chemical liquid formed on the multifunctional nozzle 50 is very
small, the on-pot chemical liquid discharge may not be
performed.
(5-3) Third Example of Operations
[0186] FIG. 6 is a diagram for explaining a third example of the
operations of the multifunctional nozzle 50.
[0187] The chemical liquid is supplied to the substrate W through
the inner flow path 50a of the multifunctional nozzle 50, so that
the substrate W is subjected to the chemical liquid processing, as
shown in FIG. 6(a).
[0188] After an elapse of a predetermined time period, the supply
of the chemical liquid is stopped. The pure water (rinse liquid) is
then supplied to the substrate W through the outer flow path 50b of
the multifunctional nozzle 50, as shown in FIG. 6(b) This causes
the substrate W to be subjected to the rinsing processing while the
chemical liquid adhering to the tip portion of the inner pipe 50A
of the multifunctional nozzle 50 is cleaned away with the pure
water (rinse liquid). Thereafter, the multifunctional nozzle 50
moves to the waiting position.
[0189] Subsequently, the ejector E2 applies suction through the
outer flow path 50b of the multifunctional nozzle 50, as shown in
FIG. 6(c). This causes the chemical liquid or the rinse liquid
adhering to the tip portions of the inner pipe 50A and the outer
pipe 50B as well as the outer peripheral surface of the inner pipe
50A and the inner peripheral surface of the outer pipe 50B to be
sucked in through the outer flow path 50b by the ejector E2 and
discharged. As a result, the chemical liquid or the rinse liquid
adhering to the tip portions of the inner pipe 50A and the outer
pipe 50B as well as the outer peripheral surface of the inner pipe
50A and the inner peripheral surface of the outer pipe 50B is
removed.
[0190] Although the ejector E2 applies suction through the outer
flowpath 50b of the multifunctional nozzle 50, as in the example
shown in FIG. 6(c), the ejector E1 may apply suction through the
inner flow path 50a. In this case, the chemical liquid or the rinse
liquid adhering to the tip portions of the inner pipe 50A and the
outer pipe 50B as well as the inner peripheral surface of the inner
pipe 50A is removed.
[0191] Alternatively, the ejector E1 and the ejector E2
respectively apply suction through the inner flow path 50a and the
outer flow path 50b of the multifunctional nozzle 50, as shown in
FIG. 6(d). This causes the chemical liquid or the rinse liquid
adhering to the tip portions of the inner pipe 50A and the outer
pipe 50B to be sucked in through the inner flow path 50a and the
outer flow path 50b, respectively, by the ejectors E1 and E2 and
discharged. The chemical liquid or the rinse liquid adhering to the
inner peripheral surface and the outer peripheral surface of the
inner pipe 50A and the inner peripheral surface of the outer pipe
50B is sucked in by the ejector E1 and the ejector E2 and is
discharged. As a result, the chemical liquid or the rinse liquid
adhering to the tip portions of the inner pipe 50A and the outer
pipe 50B as well as the inner peripheral surface and the outer
peripheral surface of the inner pipe 50A and the inner peripheral
surface of the outer pipe 50B is removed.
[0192] Alternatively, the inert gas is discharged through the inner
flow path 50a of the multifunctional nozzle 50 while the ejector E2
applies suction through the outer flow path 50, as shown in FIG.
6(e). This causes the chemical liquid or the rinse liquid adhering
to the tip portion and the inner peripheral surface of the inner
pipe 50A to be discharged outward from the multifunctional nozzle
50 with the inert gas. Further, the chemical liquid or the rinse
liquid adhering to the tip portions of the inner pipe 50A and the
outer pipe 50B as well as the outer peripheral surface of the inner
pipe 50A and the inner peripheral surface of the outer pipe 50B is
sucked in through the outerflow path 50b by the ejector E2 and is
discharged. As a result, the chemical liquid or the rinse liquid
adhering to the tip portions of the inner pipe 50A and the outer
pipe SOB as well as the inner peripheral surface and the outer
peripheral surface of the inner pipe 50A and the inner peripheral
surface of the outer pipe 50B is removed.
[0193] In the example shown in FIG. 6, the rinse liquid is
discharged through the outer flow path 50b of the multifunctional
nozzle 50. This allows the chemical liquid adhering to the tip
portion of the inner pipe 50A to be cleaned away with the rinse
liquid.
[0194] Since the chemical liquid and the rinse liquid are
respectively discharged through the separate flow paths, the mixing
of the chemical liquid into the rinse liquid is restrained. If pure
water is used as the rinse liquid discharged from the
multifunctional nozzle 50, therefore, the rinse liquid can be used
for subjecting the substrate W to the rinsing processing. As a
result, the nozzle 70 shown in FIG. 2 need not be provided
separately from the multifunctional nozzle 50, thereby simplifying
the internal configuration of the cleaning processing units 5a to
5d.
[0195] Furthermore, after the operation shown in FIG. 6(a) and
before the operation shown in FIG. 6(b), the on-pot chemical liquid
discharge, described in the second example of operations, may be
performed. In this case, it is possible to clean away the deposit
with the chemical liquid while preventing the deposit from being
formed again. In a case where the amount of the deposit of the
chemical liquid formed on the multifunctional nozzle 50 is very
small, the on-pot chemical liquid discharge may not be
performed.
(5-4) Fourth Example of Operations
[0196] FIG. 7 is a diagram for explaining a fourth example of the
operations of the multifunctional nozzle 50. The operations shown
in FIG. 7 are performed in a state where the multi-functional
nozzle 50 is brought closer to the liquid guide plate 67 provided
in the waiting pot 65. The details of the liquid guide plate 67
will be described later.
[0197] After the chemical liquid is supplied to the substrate W
above the substrate W so that the substrate W is subjected to the
chemical liquid processing, the chemical liquid is discharged onto
the liquid guide plate 67 through the inner flow path 50a of the
multifunctional nozzle 50, as shown in FIG. 7(a), above the waiting
pot 65 while the ejector E2 applies suction through the outer flow
path 50b of the multifunctional nozzle 50. In this case, the
chemical liquid discharged through the inner flow path 50a is
guided into the outer flow path 50b by the liquid guide plate 67
and is sucked in. This causes the deposit adhering to the inside of
the inner flow path 50a and the outer flow path 50b to be cleaned
away with the chemical liquid.
[0198] Then, the rinse liquid is discharged onto the liquid guide
plate 67 through the inner flow path 50a of the multifunctional
nozzle 50 while the ejector E2 applies suction through the outer
flow path 50b of the multifunctional nozzle 50, as shown in FIG.
7(b). In this case, the rinse liquid discharged through the inner
flow path 50a is guided into the outer flow path 50b by the liquid
guide plate 67 and is sucked in. This causes the chemical liquid
remaining in the inner flow path 50a and the outer flow path 50b to
be cleaned away with the rinse liquid.
[0199] Then, the inert gas is discharged through the inner flow
path 50a of the multifunctional nozzle 50 while the ejector E2
applies suction through the outer flow path 50b of the
multifunctional nozzle 50, as shown in FIG. 7(c). This causes the
rinse liquid remaining in the inner flow path 50a and the outer
flow path 50b to be removed.
[0200] In the examples shown in FIG. 7(a), the chemical liquid
discharged from the ejector E2 may be returned to the chemical
liquid supply source R11 shown in FIG. 3 through the recovery
processing device. This allows a high-cost chemical liquid to be
utilized again.
[0201] In the fourth example of operations, the operation of
applying suction while discharging the chemical liquid shown in
FIG. 7(a) may be omitted, and only the operations shown in FIGS.
7(b) and 7(c) may be performed. Also in this case, the chemical
liquid remaining in the inner flow path 50a of the multifunctional
nozzle 50 is cleaned away with the rinse liquid while the remaining
rinse liquid can be removed with the inert gas.
(5-5) Fifth Example of Operations
[0202] In the first to third examples of operations, in a case
where the above-mentioned on-pot chemical liquid discharge is
performed, the chemical liquid may be discharged while the ejector
E2 applies suction through the outer flow path 50b. In this case,
the outer flow path 50b can be simultaneously cleaned with the
chemical liquid.
[0203] At this time, the chemical liquid discharged from the
ejector E1 or the ejector E2 may be returned to the chemical liquid
supply source R11 shown in FIG. 3 through the recovery processing
device. This allows a high-cost chemical liquid to be utilized
again.
(5-6) Sixth Example of Operations
[0204] In discharging the rinse liquid through the inner flow path
50a or the outer flow path 50b of the multifunctional nozzle 50, as
in the examples shown in FIGS. 5(b) and 6(b), the ejector E2 or the
ejector E1 may apply suction through the inner flow path 50a or the
outer flow path 50b. In the case, the inner flow path 50a or the
outer flow path 50b can be simultaneously cleaned with the rinse
liquid.
(5-7) Seventh Example of Operations
[0205] Although the inert gas is discharged through the inner flow
path 50a of the multifunctional nozzle 50 while the ejector E2
applies suction through the outer flow path 50b of the
multifunctional nozzle 50, as in the examples shown in FIGS. 4(e),
5(e), and 6(e), the inert gas may be discharged through the outer
flow path 50b while the ejector E1 applies suction through the
inner flow path 50a. Further, the inert gas may be discharged
through the inner flow path 50a and the outer flow path 50b.
(5-8) Eighth Example of Operations
[0206] Although the discharge of the inert gas and the suction by
the ejector E2 are simultaneously performed in the examples shown
in FIGS. 4(e), 5(e), and 6(e), suction may be applied after the
inert gas is discharged, or the inert gas may be discharged after
suction is applied.
(5-9) Ninth Example of Operations
[0207] In the examples shown in FIGS. 4 to 6, the operation in the
inner flow path 50a of the multifunctional nozzle 50 and the
operation in the outer flow path 50b of the multifunctional nozzle
50 may be reverse to each other. In the example shown in FIGS. 4(a)
to 4(c), for example, the ejector E1 may apply suction through the
inner flow path 50a after the chemical liquid is discharged through
the outer flow path 50b of the multifunctional nozzle 50.
(6) Other examples of Multifunctional Nozzle
[0208] The nozzle 50 shown in FIG. 3 may be replaced with a
multifunctional nozzle 50 shown in FIG. 8. In the multifunctional
nozzle 50 shown in FIG. 8, a tip of an outer pipe 50B projects
farther than a tip of an inner pipe 50A. In this case, the ejector
E2 (see FIG. 3) applies suction through an outer flow path 50b,
thereby allowing a chemical liquid or a rinse liquid adhering to
the tip portion of the inner pipe 50A to be easily removed. In a
case where the chemical liquid or the rinse liquid is discharged
from an inner flow path 50a simultaneously with suction applied
through the outer flow path 50b, the chemical liquid or the rinse
liquid discharged through the inner flow path 50a can be easily
introduced into the outer flow path 50b.
[0209] The multifunctional nozzle 50 shown in FIG. 3 may be
replaced with a multifunctional nozzle 50 shown in FIG. 9. In the
multifunctional nozzle 50 shown in FIG. 9, an outer pipe 50B is so
formed in a tapered shape that its tip portion progressively comes
closer to the center toward its tip. In this case, the ejector E2
(see FIG. 3) applies suction through an outer flow path 50b,
thereby allowing a chemical liquid or a rinse liquid adhering to a
tip portion of an inner pipe 50A to be more easily removed. In a
case where the chemical liquid or the rinse liquid is discharged
from an inner flow path 50a simultaneously with suction applied
through the outer flow path 50b, the chemical liquid or the rinse
liquid discharged through the inner flow path 50a can be more
easily introduced into the outer flow path 50b.
(7) LIQUID GUIDE PLATE
[0210] In a case where suction is applied through the outer flow
path 50b of the multifunctional nozzle 50 while discharging the
chemical liquid or the rinse liquid through the inner flow path 50a
of the multifunctional nozzle 50 at the waiting position, as in the
example shown in FIG. 7, a liquid guide plate 67 is provided in the
waiting pot 65.
[0211] FIG. 10 is a cross-sectional view showing the details of the
waiting pot 65 and the liquid guide plate 67.
[0212] As shown in FIG. 10, the liquid guide plate 67 is stretched
so as to be attachable or detachable on an upper opening of the
waiting pot 65. The liquid guide plate 67 is composed of a member
having a substantially rectangular plate shape. Further, the liquid
guide plate 67 is concavely curved in its central area, and has a
liquid guide 67a having a horizontal plane formed therein.
[0213] The chemical liquid or the rinse liquid is discharged by the
multifunctional nozzle 50 and is sucked in with the tip portion of
the multifunctional nozzle 50 opposed to the liquid guide 67a of
the liquid guide plate 67 with a very small gap (e.g., 1 mm)
provided therebetween. Thus, the chemical liquid or the rinse
liquid discharged from the multifunctional nozzle 50 is reliably
received by the liquid guide 67a of the liquid guide plate 67
without dropping downward as it is. Therefore, the chemical liquid
or the rinse liquid discharged through the inner flow path 50a of
the multifunctional nozzle 50 can be easily sucked in through the
outer flow path 50b.
[0214] In a case where suction is applied through the inner flow
path 50a while discharging the chemical liquid or the rinse liquid
through the outer flow path 50b of the multifunctional nozzle 50
with the liquid guide plate 67 mounted on the waiting pot 65, the
chemical liquid or the rinse liquid discharged through the outer
flow path 50b is also easily sucked in through the inner flow path
50a.
[0215] Note that the liquid guide plate 67 may not be provided when
suction forces produced by the ejectors E1 and E2 are sufficiently
large.
(8) ANOTHER EMBODIMENT
[0216] (8-1)
[0217] Although in the above-mentioned embodiment, after subjecting
the substrate W to the rinsing processing, the substrate W is dried
by removing the pure water on the substrate W by the centrifugal
force due to the rotation of the rotation shaft 25, a substrate W
may be dried by supplying an inert gas onto the substrate W. In
this case, means for supplying the inert gas may be separately
provided. Alternatively, the inert gas may be supplied to the
substrate W from an inert gas supply source R13 or an inert gas
supply source R23 using a multifunctional nozzle 50.
[0218] In a case where the substrate W is subjected to drying
processing using the multifunctional nozzle 50, a chemical liquid
or a rinse liquid is discharged through a flow path separated from
the flow path through which an inert gas is discharged in order to
prevent the chemical liquid and the rinse liquid from being mixed
into the inert gas during the drying processing.
[0219] (8-2)
[0220] Although in the above-mentioned embodiment, the chemical
liquid supply source R11, the rinse liquid supply source R12, the
inert gas supply source R13, and the ejector E1 are connected to
the inner flow path 50a of the multifunctional nozzle 50, and the
chemical liquid supply source R21, the rinse liquid supply source
R22, the inert gas supply source R23, and the ejector E2 are
connected to the outer flow path 50b of the multifunctional nozzle
50, either one of the chemical liquid supply sources R11 and R21
may be provided, either one of the rinse liquid supply sources R12
and R22 may be provided, either one of the inert gas supply sources
R13 and R23 may be provided, and either one of the ejectors E1 and
E2 may be provided.
[0221] In a case where the operations shown in FIG. 4 are
performed, for example, the rinse liquid supply source R12
connected to the inner flow path 50a, and the chemical liquid
supply source R21, the rinse liquid supply source R22, and the
inert gas supply source R23 connected to the outer flowpath 50b may
not be provided.
[0222] In a case where the operations shown in FIG. 5 are
performed, the chemical liquid supply source R21, the rinse liquid
supply source R22, and the inert gas supply source R23 connected to
the outer flow path 50b may not be provided.
[0223] In a case where the operations shown in FIG. 6 are
performed, the rinse liquid supply source R12 connected to the
inner flow path 50a, and the chemical liquid supply source R21 and
the inert gas supply source R23 connected to the outer flow path
50b may not be provided.
[0224] (8-3)
[0225] Although in the above-mentioned embodiment, description was
made of a case where the multifunctional nozzle 50 is used in the
cleaning processing units 5a to 5d for subjecting the substrate W
to the cleaning processing, the present invention is not limited to
the same. For example, the multifunctional nozzle 50 may be used in
other processing units for processing a substrate with a chemical
liquid.
[0226] (8-4)
[0227] Examples of processing with a chemical liquid include
development processing of a substrate W, resist film coating
processing, resist stripping processing, and polymer removal
processing. When the substrate W is subjected to the development
processing, an alkali solution such as TMAH (tetramethyl ammonium
hydroxide) or an acid solution such as butyl acetate is used as the
chemical liquid. During the resist film coating processing, a
resist liquid (a photosensitive agent) is used as the chemical
liquid. During the resist stripping processing, surfaced water or
ozone water, for example, is used as the chemical liquid. During
the polymer removal processing, an ammonium fluoride-based solution
containing ammonium fluoride and phosphoric acid is used as the
chemical liquid.
Correspondence Between Each Constituent Element in the claims and
Part in the Embodiments
[0228] In the following paragraphs, non-limiting examples of
correspondences between various elements recited in the claims
below and those described above with respect to various preferred
embodiments of the present invention are explained.
[0229] In the embodiments described above, the inner flow path 50a
is an example of a first flow path, the outer flow path 50b is an
example of a second flow path, the discharge port 51a is an example
of a first end opening, the discharge port 51b is an example of a
second end opening, the multifunctional nozzle 50 is an example of
a nozzle, the ejectors E1 and E2, the supply suction pipes 63 and
64, and the pipes 63d and 64d are examples of a suction device.
[0230] Furthermore, the chemical liquid supply sources R11 and R21,
the supply suction pipes 63 and 64, and the pipes 63a and 64a are
examples of a chemical liquid supply system, the rinse liquid
supply sources R12 and R22, the supply suction pipes 63 and 64, and
the pipes 63b and 64b are examples of a rinse liquid supply system,
the inert gas supply sources R13 and R23, the supply suction pipes
63 and 64, and the pipes 63c and 64c are examples of an inert gas
supply system, the inner pipe 50A is an example of a first member,
and the outer pipe 50B is an example of the second member.
[0231] As each of various elements recited in the claims, various
other elements having configurations or functions described in the
claims can be also used.
[0232] While preferred embodiments of the present invention have
been described above, it is to be understood that variations and
modifications will be apparent to those skilled in the art without
departing the scope and spirit of the present invention. The scope
of the present invention, therefore, is to be determined solely by
the following claims.
* * * * *