U.S. patent application number 11/558163 was filed with the patent office on 2007-04-19 for dielectric composite material.
This patent application is currently assigned to 3M Innovative Properties Company. Invention is credited to Robert S. Clough, Fuming B. Li, Guoping Mao, Nelson B. O'Bryan, Shichun Qu.
Application Number | 20070085212 11/558163 |
Document ID | / |
Family ID | 33517453 |
Filed Date | 2007-04-19 |
United States Patent
Application |
20070085212 |
Kind Code |
A1 |
Mao; Guoping ; et
al. |
April 19, 2007 |
DIELECTRIC COMPOSITE MATERIAL
Abstract
A dielectric composite material containing a toughened
benzocyclobutene resin and at least about 50% by weight of an
inorganic filler. Also electronic packages having at least one
conductive layer and at least one layer of the dielectric composite
material. The dielectric composite material can have a dielectric
constant less than about 3.5, and a dielectric loss of less than
about 0.004.
Inventors: |
Mao; Guoping; (Woodbury,
MN) ; Qu; Shichun; (Eau Claire, WI) ; Li;
Fuming B.; (Woodbury, MN) ; Clough; Robert S.;
(St. Paul, MN) ; O'Bryan; Nelson B.; (Woodbury,
MN) |
Correspondence
Address: |
3M INNOVATIVE PROPERTIES COMPANY
PO BOX 33427
ST. PAUL
MN
55133-3427
US
|
Assignee: |
3M Innovative Properties
Company
|
Family ID: |
33517453 |
Appl. No.: |
11/558163 |
Filed: |
November 9, 2006 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
10465155 |
Jun 19, 2003 |
7164197 |
|
|
11558163 |
Nov 9, 2006 |
|
|
|
Current U.S.
Class: |
257/758 ;
257/E23.062; 257/E23.077 |
Current CPC
Class: |
H01L 2924/09701
20130101; H05K 2201/0209 20130101; H05K 3/4626 20130101; H05K
2201/0239 20130101; H01L 23/49894 20130101; H05K 1/0373 20130101;
H01L 2924/0002 20130101; C08L 65/00 20130101; H01L 2924/3011
20130101; H01L 23/49822 20130101; H01L 2924/0002 20130101; H01L
2924/00 20130101 |
Class at
Publication: |
257/758 |
International
Class: |
H01L 23/52 20060101
H01L023/52 |
Claims
1. A substrate structure comprising a conductive layer coated with
at least one layer of dielectric composite material, said
dielectric composite material having a dielectric constant less
than about 3.5, a dielectric loss of less than about 0.004,
including a toughened benzocyclobutene resin, and from about 50% to
about 75% by weight of at least one inorganic particulate filler,
the resin and the filler being compatibilized by means of a silane
coupling agent.
2. A substrate structure according to claim 1 wherein said
conductive layer is a copper layer.
3. A substrate structure according to claim 1 wherein said
conductive layer is formed from a laminated low profile copper, or
plated copper, or sputtered aluminum, having a thickness of less
than about 15 .mu.m.
4. A substrate structure according to claim 1 wherein said at least
one inorganic particulate filler is a particulate silica having an
average particle size less than or equal to ten percent of the
thickness of a layer of the dielectric composite material.
5. A substrate structure according to claim 1 wherein said silane
coupling agent is selected from the group consisting of
vinyltriethoxysilane, vinyltriacetoxysilane,
7-octenyltrimethoxysilane, and mixtures thereof.
6. A substrate structure according to claim 1 wherein said
structure further includes a primer on said copper surface, said
primer being selected from the group consisting of
vinyltriacetoxysilane, aminosilane, and aminopropylsilane.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of U.S. Ser. No.
10/465,155, filed Jun. 19, 2003, now allowed, the disclosure of
which is incorporated by reference in its entirety herein.
FIELD
[0002] The present invention relates to dielectric composite
materials.
BACKGROUND
[0003] Only a few dielectric materials are useful for high
performance electronic applications. To be useful for high speed
interconnects, a material must have a low dielectric constant, low
loss, and must be capable of adhering to the other materials that
it may interface, such as copper, chrome, zinc, aluminum, silicon
oxide, silicon nitride (SiN), titanium nitride (TiN), plasma
enhanced oxide (PEOX), phosphor-silicate glass (PSG), and the like.
Also, the materials must be processable using typical manufacturing
techniques, such as spin-on coating, die coating, chemical
mechanical polishing, dry etch, imaging, laser ablation, hot/cold
press, etc. Other desirable material properties include low
moisture absorption, outstanding chemical resistance, good thermal
properties, predictable dimension movement, controllable melt flow
viscosity, and fracture resistance to cyclic stress.
[0004] Advanced high density, multilayer electronic packages
require advanced dielectric materials, especially in the high
frequency (GHz) applications. One of the key properties for such
advanced dielectrics is the low dielectric loss in the GHz
frequency range, where associated signal loss becomes a key
performance roadblock. To have low dielectric loss, the dielectric
materials must have low polarity as well as low dipole moment.
Another key requirement is that the glass transition temperature
(Tg) of the dielectric materials must be sufficiently high, e.g.,
higher than 200.degree. C., to survive increasing high temperature
manufacturing processes, such as lead-free solder reflow. Other
requirements include excellent gap-fill properties, toughness (good
elongation), low coefficient of thermal expansion (CTE), e.g., a
CTE close to that of copper, (CTE of 17 parts per million
(ppm)/.degree. C.), and good adhesion to different bonding
treatments applied to other layers.
[0005] A dielectric material frequently used for high frequency
microwave (e.g., 2.4 GHz) applications is one of a variety of
composites based on a fluoropolymer material sold under the trade
name TEFLON, such as TEFLON/ceramic, TEFLON/fiberglass, etc.
However, TEFLON materials require a high lamination temperature,
i.e., over 350.degree. C. Also, due to the non-crosslinked nature
(thermoplastic) of TEFLON materials, dimensional stability issues
arise when an outside layer is laminated to previous layers.
Polyimides, and some polyesters (e.g., aromatic liquid crystal
polymers) are also dielectric with good electrical properties, but
these polymer-based dielectric materials have issues with moisture
uptake, flow-fill, or high CTEs (greater than 60 ppm/.degree. C.,
especially in Z-axis), which again limit the materials to certain
applications. Benzocyclobutene (BCB) polymers are now also becoming
known as useful dielectric compounds.
[0006] U.S. Pat. No. 6,514,872 B1 discloses a method for
manufacturing a semiconductor device in which a benzocyclobutene
serves as an inter layer dielectric (ILD). The BCB coating, in a
thickness range from 5 .mu.m to 8 .mu.m, is spin-coated onto the
desired surface and then patterned anisotropically with a mixture
of C12/BC13/0.sub.2 using SiO.sub.2 film as an etch mask.
[0007] U.S. Pat. No. 6,410,414 B1 discloses a method for
fabricating a semiconductor device in which a benzocyclobutene film
serves as an insulator between redistribution wiring and an alpha
particles blocking layer between sensitive integrated circuit
devices, such as a memory cell, and an alpha particle source such
as a solder ball. The BCB coating, having a thickness range from 10
.mu.m to 100 .mu.m, is spin-coated onto the desired surface.
[0008] U.S. Pat. No. 6,294,741 B1 discloses a multi chip module
(MCM) package using benzocyclobutene polymer as a laminate adhesive
in the construction of such structure. The BCB polymer is first
spin-coated onto frame polyimide film sold under the trade name
KAPTON E in a layer thickness from 5 .mu.m to 15 .mu.m, and then
baked and laminated for making multi-layer interconnect
structure.
[0009] U.S. Pat. No. 6,262,376 discloses a process for building up
high frequency chip carrier substrate on a printed wiring board
(PWB) or multi-layer ceramic (MLC) base, in which a polyimide film,
or benzocyclobutene film, or a thermoplastic film, with dielectric
constant less than 3.0, serves as an insulator on the upper
conductor layer(s). The process deposits the dielectric film using
either spin-on coating, or chemical vapor deposition (CVD).
[0010] U.S. Pat. No. 6,420,093 discloses a process for buildingup
printed wiring boards on thick printed circuit board (PCB) cores
using metal foil coated with toughened benzocyclobutene-based
dielectric polymers. The process laminates a sheet with a metal
foil and a BCB-containing dielectric material. The BCB polymers
disclosed comprise ethylenically unsaturated polymer additives and
photoactive compounds. A partially polymerized "b-stage" material
is also disclosed. However, use of fillers is not disclosed. Due to
the non-polar nature of the BCB materials and the non-polar
solvents, such as mesitylene, used in BCB systems, the polymers are
not normally compatible with inorganic filler particles such as
silica.
[0011] To date, most of the applications involving BCB material use
spin-on coating of the materials, either dry etchable or photo
imageable, which contain no fillers. Coating thickness is typically
less than 20 .mu.m due to the relatively high curing stress of BCB,
which often causes wafer or substrate bowing, and thus makes the
wafer/substrate unprocessable in post coating processes.
SUMMARY
[0012] It has now been discovered that a toughened BCB resin may be
formed into a highly filled composite material with excellent
dielectrical, thermal, and mechanical properties. Such a composite
BCB material may be coated directly onto copper or other substrates
for use in electronic packages. It has also been discovered that a
compatiblized highly filled BCB resin will retain excellent
dielectric properties and will also adhere strongly to low profile
copper surfaces and other surfaces of interest.
[0013] One aspect of the present invention is a dielectric
composite material useful in electronic packages having a
dielectric constant less than about 3.5, and a dielectric loss of
less than about 0.004, the composite material including a toughened
benzocyclobutene resin, and from about 50% to about 75% by weight
of at least one particulate inorganic filler; the resin and the
filler being compatiblized by means of a compatibilizing agent. The
dielectric composite material may have a CTE of less than about 50
ppm/.degree. C. and/or tensile elongation of about 2%. A coating of
the dielectric composite material may have a thickness of from
about 0.5 .mu.m to about 100 .mu.m, preferably about 0.5 .mu.m to
about 50 .mu.m, and a peel strength to low profile copper of at
least about 2 lbs/in (0.35 N/mm).
[0014] Another aspect of the invention is an electronic package
having at least one conductive layer, and at least one layer of
dielectric composite material laminated thereto, wherein the
dielectric composite material has a dielectric constant less than
about 3.5, and a dielectric loss of less than about 0.004, wherein
the dielectric composite material includes a toughened
benzocyclobutene resin, and from about 50% to about 75% by weight
of at least one inorganic particulate filler; the resin and the
filler being compatiblized by means of a silane coupling agent. In
one embodiment of the electronic package, the inorganic particulate
filler comprises silica particles.
[0015] Another aspect of the invention is a dispersion comprising a
toughened benzocyclobutene resin, at least one inorganic
particulate filler having a dielectric constant of less than or
equal to 4.0, and a dielectric loss of less than 0.001; a silane
coupling agent; and a non-polar solvent.
[0016] Another aspect of the invention provides a substrate
structure comprising a conductive layer coated with at least one
layer of dielectric composite material having a dielectric constant
less than about 3.5, a dielectric loss of less than about 0.004,
wherein the dielectric composite material includes a toughened
benzocyclobutene resin, and from about 50% to about 75% by weight
of at least one inorganic particulate filler; the resin and the
filler being compatiblized by means of a silane coupling agent.
[0017] As used herein, all weights, ratios and amounts are by
weight unless otherwise specified.
[0018] As used herein, the following terms have these meanings:
[0019] 1. The term "compatiblized" means rendered compatible with
one another through the use of an additional agent, which is
compatible with each of the otherwise incompatible materials.
[0020] 2. The term "CTE" refers to the coefficient of thermal
expansion of a material. The term "low CTE" means having an
isotropic CTE of less than 40 ppm/.degree. C. up to a temperature
of about 200.degree. C.
[0021] 3. The term "low profile" means having a surface roughness,
with a maximum foil profile variation (Rz) of less than about 10.2
.mu.m (about 200 microinches).
[0022] 4. The term "B-stage" means a partially polymerized
material, which must undergo further curing to reach the final
desired state.
[0023] 5. The term "dielectric composite material" refers to a
material that includes both a toughened benzocyclobutene resin and
an additional inorganic filler. The BCB resin includes tougheners
prior to forming the composite material.
[0024] 6. The term "toughened BCB" refers to BCB material
containing a rubber phase in the form of discrete particles
embedded in the BCB material matrix.
[0025] 7. The term "highly filled" refers to loading of the
toughened BCB matrix with an inorganic filler at levels greater
than or equal to about 50 wt. %.
[0026] 8. The terms "coating" and "layer" are used interchangeably
herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] FIG. 1 is a schematic representation of a multilayer
interconnect substrate.
[0028] FIG. 2 is a cross-sectional view of a multilayer
interconnect substrate with a die attach surface and a board attach
surface.
DETAILED DESCRIPTION OF THE INVENTION
[0029] The dielectric composite material of the present invention
is a highly filled, toughened benzocyclobutene (BCB) resin. BCB
resins are commercially available from Dow Chemical under the trade
name CYCLOTENE. BCB polymers have excellent dielectric properties,
both dielectric constant and loss, well into the upper frequency
range (1-40GHz), even in high humidity operating conditions. One
embodiment of the formula described herein uses a prepolymerized,
or "b-staged" divinylsiloxane bis-benzocyclobutene, which is
commercially available from Dow Chemical Company.
[0030] To provide advanced dielectrics for multilayer electronic
packaging application and to meet all the requirements desirable
for advanced dielectric materials, highly filled dielectric polymer
composite materials are formed based on toughened benzocyclobutene
(BCB) and inorganic filler particles. Toughened BCB materials
exhibit much improved mechanical properties, with elongation up to
about 35% without macroscopic phase separation. Toughened BCB
resins exhibit excellent dielectric properties, having a dielectric
loss of less than 0.0025 and a low dielectric constant of about
2.6. The resins also have excellent flow-fill properties. The Tg is
high, above 300.degree. C. However, BCB resins, especially the
toughened BCB resins, have a CTE in excess of 85 ppm/.degree. C.
This high CTE limits their usefulness in high-density semiconductor
packages. The exact CTE is dependent on the amount of toughening
agent used in the formula.
[0031] To reduce the CTE of the toughened resin and still maintain
its excellent electrical-mechanical performance and chemical
resistance, inorganic fillers are added to form a dielectric
composite material. In general, useful fillers for composite
material compositions of the invention include inorganic fillers
having dielectric constants of less than 5 and dielectric loss (in
GHz range) of less than 0.002. Essentially, any particulate filler
with these properties is useful, as long as it is less than about 2
microns average size or about 8 microns absolute size, and has good
insulative properties, and/or good dielectric properties. The
filler preferably has an average particle size of less than or
equal to ten percent of the layer thickness of the dielectric
composite material in the final product. The filler also preferably
has a dielectric constant of less than or equal to 4.0, and a
dielectric loss of less than 0.001. One such filler is silica
(SiO.sub.2). Other suitable inorganic fillers include, but are not
limited to, alumina, quartz, and glass.
[0032] Optionally, the initial BCB resin or the dielectric
composite material may contain stabilizers that inhibit or retard
heat degradation, oxidation, and skin or color formation during
processing steps that expose the material to high temperatures.
[0033] At least one embodiment of the composite dielectric material
of the present invention has one or more of the following desirable
traits. First, the inorganic filler, e.g., silica, forms a stable
dispersion with toughened BCB. Second, there is good adhesion
between the inorganic fillers and the BCB polymer. Third, adhesion
between the dielectric composite material (e.g., BCB-SiO.sub.2) and
surfaces of interest (e.g., copper or other metal foils, another
layer of the BCB-SiO.sub.2 material, etc.) can be improved by use
of a surface priming solution. In particular, good adhesion to low
profile thin copper (having a thickness of up to about 5 .mu.m) is
desirable. Finally, the dielectric composite material is capable of
being coated in uniformly thin layers onto a chosen substrate to
achieve good electrical performance.
[0034] Typically the dielectric composite material is made by
forming a dispersion comprising a toughened benzocyclobutene resin,
at least one inorganic particulate filler; a coupling agent; and a
non-polar solvent.
[0035] To make inorganic particulate fillers, such as silica,
compatible with a non-polar solvent such as mesitylene, toluene, or
mixtures thereof, the silica surface may be treated, e.g.,
functionalized. One method of functionalizing the surface that will
also rendering the fillers compatible with BCB resins is to use
silane coupling agents such as vinyltriethoxysilane (VTS),
vinyltriacetoxysilane (VTAS), 7-octenyltrimethoxysilane,
aminopropylsilane (APS), and mixtures thereof. When a mixture is
used, it can also include additional silanes such as
octyltrimethoxysilane, hexyltrimethoxysilane,
pentyltrimethoxysilane, phenyltrimethoxysilane, and mixtures
thereof. If the silica is not surface treated, it tends to
agglomerate in the non-polar solvents.
[0036] Other methods of compatiblizing the inorganic filler with
BCB resins and/or non-polar solvents include use of dispersing
agents or surfactants that will not significantly decrease the
performances of the finished dielectric film.
[0037] Other additives may be used in the dielectric composite
material, provided that they do not interfere with the adhesion
properties or the dielectric properties of the composite material.
Useful additives include antioxidants, stabilizers, dyes,
colorants, and the like.
[0038] Substrates and electronic packages of the present invention
include at least one conductive layer, and typically include
multiple conductive layers with multiple interleaved dielectric
layers. At least one of the dielectric layers or the core layer
comprises the dielectric composite material of the present
invention. The conductive layer may comprise any suitable type of
conductive material. Examples of suitable materials included
laminated low profile copper, plated copper, and sputtered
aluminum. The conductive layer is typically less than about 40
.mu.m thick, preferably 18 .mu.m. In one embodiment the conductive
layer(s) are formed from copper. Copper substrates are preferably
thin, typically 5 .mu.m or less, with low profile surfaces. Due to
its non-polar nature, BCB has poor adhesion to copper substrates.
To improve the adhesion between copper and BCB dielectric composite
material, primers or coupling agents may be used to prime the
copper surface prior to coating of the BCB dielectric composite
material. Useful primers include vinyltriacetoxysilane,
aminosilane, aminopropylsilane, and the like. When used, the primer
is typically placed onto the copper substrate, which is then baked
at 100.degree. C. or more for a period of about 5 to about 10
minutes prior to coating of the dielectric composite material.
[0039] To precision coat the dielectric composite material, a
solvent-containing dispersion of the dielectric composite material
is coated onto the desired substrate and dried, preferably at
elevated temperatures in order to remove the solvent. The dried
coatings preferably have a thickness of between about 0.5
micrometer and about 100 micrometers. In one preferred embodiment,
the dielectric layer has a thickness of 25 .mu.m or less. A
thickness of 36 .mu.m and even 40 .mu.m may be useful for some
applications. Curing the dielectric composite material can be
completed through baking or lamination. The lamination temperature
will vary with the specific ingredients used. Alternatively, the
dispersion may be coated onto a release liner such as poly(ethylene
terephthalate) and then laminated to the thin copper substrates.
Completed substrate structures may comprise a single conductive
layer with a dielectric composite material coated as described or
multiple layers of conductive and/or dielectric composite
material.
[0040] Another aspect of the present invention is a multilayer
electronic package having multiple conductive layers, at least one
of which is a copper layer, and multiple dielectric layers, at
least one of which comprises a dielectric composite material having
a dielectric constant less than about 3.5, and a dielectric loss of
less than about 0.004, wherein the dielectric composite material
includes a toughened benzocyclobutene resin with about 50% to about
75% by weight of a particulate silica filler, the resin and the
filler being compatiblized by means of a compatibilizing agent such
as a dispersant, a surfactant or a silane coupling agent.
[0041] FIGS. 1 and 2 are exemplary embodiments of multilayer IC
packages that can be made with the composite dielectric material of
the current invention that are useful for packaging integrated
circuit dies. Multiple dielectric layers can be formed from the BCB
composite dielectric material.
[0042] FIG. 1 is a schematic representation of one possible
multilayer interconnect substrate that could be produced with the
dielectric material of the current invention. FIG. 1 shows 4-metal
layer interconnect substrate 100 made by laminating an alternating
series of conductive (typically metal) layers 112, 114, 132 and
134; core layer 111; and dielectric layers 122 and 124. The
conductive and dielectric layers shown in FIG. 1 are disposed
symmetrically about core layer 111. By "disposed symmetrically", it
is meant that each dielectric or conductive layer formed on one
side of core layer 111 has a corresponding layer of the same
material formed on the opposite side of the core layer.
[0043] As further shown in FIG. 1, via 142 or 144 is used to
interconnect the various metal layers. Via 142 extends through each
of core layer 111 and dielectric layers 122, and 124 from
conductive layer 132 and terminates at conductive layer 134. Each
via 142, 144 is plated with conductive material using any of the
deposition techniques that are known in the microelectronic
fabrication art. In an alternative embodiment, each via 142, 144
may be filled with an electrically conductive material to define a
conductive path. One skilled in the art will recognize that any
combination of vias (through vias, blind vias and buried vias) may
be used to provide electrical connections between the bond pads
152, 154 on die attach surface 104 and bond pad 156 on the ball
grid array (BGA) attach surface 102.
[0044] Solder masks 162, 164 can be applied to die attach surface
104 and BGA attach surface 102. Each solder mask 162, 164 exposes a
contact or bond pad adjacent to each via 142, 144. For example,
solder mask 162 exposes contact pads 152, 154, whereas solder mask
164 exposes contact pads 156. Solder balls (not shown) associated
with the chip can be aligned over contact pads, 152, 154, then
heated, and reflowed to form an electrical and mechanical bond to
the contact pads of the multilayer substrate and the chip.
Likewise, solder balls (not shown) associated with the printed
wiring board (PWB) can be aligned over contact pads 156, heated,
and reflowed to form an electrical and mechanical bond between the
contact pads and the PWB.
[0045] Core layer 111 may be conductive, non-conductive, or may
include a combination of conductive and non-conductive materials.
Suitable conductive materials include thick copper (e.g., up to 1/2
mm). Suitable non-conductive materials include the composite
dielectric material of the invention, polyimide, glass, ceramics,
inorganic dielectric materials, polymer/dielectric material blends,
and the like. Suitable combination materials include flexible
electrical circuits, capacitors, and printed wiring boards.
[0046] Dielectric layers 122 and 124 may be formed from individual
layers of, or laminates of a combination of, high-temperature
organic dielectric substrate materials, such as polyimides and
polyimide laminates, epoxy resins, liquid crystal polymers (LCP), a
dielectric composite material of the current invention, or
dielectric materials comprised at least in part of
polytetrafluoroethylene, with or without a filler. In one exemplary
package design having a core layer and two dielectric layers, the
non-conductive core layer may be composed of either a liquid
crystal such as BIAC film (Japan Gore-Tex Inc., Okayama-Ken, Japan)
or LCP CT film (Kuraray Co., Ltd., Okyama, Japan) or a polyimide
film such as KAPTON H, K, or E (E. I. Du Pont de Nemours and
Company) or a polyimide film sold under the trade name UPILEX (Ube
Industries, Ltd.,) and the other two dielectric layers are composed
of a dielectric composite material of the current invention.
[0047] Conductive layers 112, 114, 132 and 134 may be formed from
known conductive materials, such as copper. Other well-known
conductive materials that may also be used include aluminum, gold,
nickel, or silver. In at least one embodiment, conductive layers
112, 114, 132 and 134 may each have a thickness in the range of
from about 5 to about 14 microns. In one exemplary package design,
the thickness of each conductive layer 112, 114, 132 and 134, is
approximately 12 microns. Core layer 111 may have a thickness in
the range of at least about 1 micron to 750 microns. The remaining
dielectric layers 122, 124 may each have a thickness in the range
of about 20 to about 70 microns. In one example, the thickness of
each dielectric layer 122, 124 is approximately 36 microns.
[0048] The various layers of interconnect substrate 100 can be
stacked together and laminated using heat and pressure. For
example, all of the layers can be simultaneously laminated with
each other in a stack. Alternatively, the layers can be built upon
a core layer 111 one at a time, or incrementally built with one or
two additional layers added in each lamination step. During
lamination, dielectric layers 122 and 124 melt and flow to provide
a monolithic bulk dielectric material. The conductive layers can be
patterned using standard known photolithography and etch
methods.
[0049] Through vias can be formed following lamination of
interconnect substrate 100. In particular, vias may be formed by
drilling or laser ablation processes as described in U.S. Pat. No.
6,021,564, column 10, line 31 to column 31, line 10, incorporated
herein by reference, or by chemical milling processes. Following
lamination, solder masks 162 and 164 are added to interconnect
substrate 100. Solder masks 162 and 164 may be patterned to define
contact pads 152, 154 and 156 for receipt of solder balls from a
chip and PWB, respectively.
[0050] In some embodiments (not shown in FIG. 1), interconnect
substrate 100 may accept a "flip-chip" integrated circuit.
Flip-chip mounting entails placing solder balls on a die or chip,
flipping the chip over, aligning the chip with the contact pads on
a substrate, such as interconnect module 100, and reflowing the
solder balls in a furnace to establish bonding between the chip and
the substrate. In this manner, the contact pads are distributed
over the entire chip surface rather than being confined to the
periphery as in wire bonding and tape-automated bonding (TAB)
techniques. As a result, the maximum number of I/O and power/ground
terminals available can be increased, and signal and power/ground
interconnections can be more efficiently routed on the chips.
[0051] It should be recognized by those skilled in the art that
interconnect substrates of the type disclosed herein may contain
additional layers including embedded capacitor layers, conductive
layers, dielectric layers, and the like. It is also possible to
make interconnect substrates having fewer dielectric and conductive
layers depending on the requirements of the final interconnect
module.
[0052] FIG. 2 is a cross-sectional side view illustration of a
multi-layer interconnect substrate 200, having six metal layers.
The substrate has a die attach surface 204 and a board attach
surface 202. It also includes a central capacitor structure 210
with first and second conductive layers 212, 214 and core layer
211.
[0053] Metal films coated with dielectric composite material are
laminated to both sides of patterned capacitor structure 210, and
subsequently, through vias 240, 242 are drilled and cleaned. Seed
metal (not shown) is applied to the via(s) through electroless
plating or sputtering or chemical vapor deposition, and then bulk
metal is grown through electrolytic plating. Circuitry from the
third and fourth conductive layers 232 and 234 is formed by
standard techniques. Additional metal films coated with dielectric
composite material are then laminated to both sides of the build-up
structure. Blind vias 244, 246, 248 are drilled. Seed metal is
again applied, followed by bulk metal buildup. Surface circuitries
236, 238 are then formed through standard techniques. Protective
coating 262 and 264, are finally applied and patterned to expose
top contact pads 252, 254 and bottom electrical contact pads
256.
[0054] The core layer 211 of the capacitor structure may be formed
by coating a high dielectric material on one or both of first and
second conductive layers 212, 214 and then applying heat and
pressure to laminate capacitor structure 210 and to cure the
dielectric layer. First and second conductive layers 212, 214 can
be formed of copper foils, and serve as power and ground planes.
Conductive layers 212, 214 may each have a thickness of up to about
40 .mu.m, preferably up to about 18 .mu.m. Core layer 211 may be in
the form of an epoxy resin loaded with high dielectric constant
particles. The dielectric particles may be selected, for example,
from barium titanate (including non-fired barium titanate) barium
strontium titanate, titanium oxide, and lead zirconium
titanate.
[0055] Capacitor structure 210 is extremely thin and exhibits an
extremely high dielectric constant. For example, if used in core
layer 211, the dielectric composite material is typically
formulated such that, upon curing, it has a total dry thickness of
less than or equal to approximately 8 microns and, more preferably,
from about 1 to about 4 microns. In addition, the dielectric
composite material has a high dielectric constant of greater than
or equal to approximately 12 and, more preferably, from about 12 to
about 150.
[0056] In addition, interconnect substrate 200 includes second and
third dielectric layers 222, 224 on opposite sides of central
capacitor structure 210. Third conductive layer 232 is formed
between second dielectric layer 222 and fourth dielectric layer
226. Fourth conductive layer 234 is formed between third dielectric
layer 224 and fifth dielectric layer 228. While first and second
conductive layers 212, 214 may form power and ground planes, third
and fourth conductive layers 232, 234 may be patterned to form
signal layers.
[0057] Fourth dielectric layer 226 is formed over third conductive
layer 232, whereas fifth dielectric layer 228 is formed over fourth
conductive layer 234. Conductive layers 236, 238 can be formed on
dielectric layers 226 and 228, respectively, and patterned to
define preformed apertures for the formation of vias. The preformed
apertures are typically formed by laser ablation. Thus, the laser
used to form the vias is applied to ablate only the dielectric
material.
[0058] Conductive layers 232, 234, 236, 238 all may be formed from
copper with a thickness in the range of from about 5 to about 14
microns and, more preferably about 12 microns. Each of dielectric
layers 222, 224, 226, 228 may have a thickness in the range of from
about 20 to about 70 microns and, more preferably about 36 microns.
Thus, the distance between an outer surface of first conductive
layer 212 and an inner surface of electrical contact 252 is less
than about 100 microns and, more preferably, less than or equal to
about 88 microns. The various layers can be laminated together in a
single step or through a sequential build-up. For example, prior to
lamination, dielectric layers 222, 224 can be coated onto
conductive layers 232, 234, respectively. These
dielectric/conductive layer pairs can be laminated on either side
of the central capacitor structure 210. The conductive layers 232
and 234 can be patterned to define signal traces. Similarly,
dielectric layers 226, 228 can be coated onto conductive layers
236, 238, respectively, prior to lamination. These
dielectric/conductive layer pairs can be laminated on to the outer
surface of conductive layers 232 and 234, respectively. The
conductive layers 236, 238 may then be patterned.
[0059] In some embodiments, the conductive layers are "balanced",
i.e., symmetrically positioned on opposite sides of capacitor
structure 210 to promote structural uniformity and resist
deformation due to thermal stresses. In particular, conductive
layers may be constructed so that each has the same type of metal
foil laminated or plated thereon and etched into a pattern across
it; the metal concentration in each layer being approximately
equal. In this manner, the CTE of one layer and the CTE of the
other layer are substantially equal, thereby balancing one another
and minimizing warp of the interconnect module under thermal
stress.
[0060] For I/O interconnection, interconnect substrate 200 includes
a number of conductive vias, such as buried through via 240, 242
which extend through dielectric layers 222, 224 and contact
conductive layers 232, 234, which in turn, contact blind vias 244,
246, at the die attach surface 204 and blind via 248, at the board
attach surface 202, respectively. Typically, blind vias are formed
through only one dielectric layer and are used for routing
connections between two conductive layers on either side of the
dielectric layer. However, blind vias can be formed that extend
through a plurality of laminated layers to connect multiple
conductive layers on either side of the dielectric layer. Each of
the conductive layers can be patterned as required, and any
necessary blind vias to connect adjacent conductive layers formed,
before the remaining layers are bonded to the overall structure.
For power and ground distribution buried through vias 240, 242 may
contact either first conductive layer 212 or second conductive
layer 214.
[0061] Blind vias 244, 246 are placed adjacent to contact pads 252,
254 for receiving solder balls (not shown) from a chip attached to
interconnect substrate 200. The solder balls are heated and
reflowed to form electrically conductive bonds with contact pads
252, 254 and are electrically connected to vias 244, 246,
respectively, thereby interconnecting I/O's on the chip with I/O's
on the interconnect substrate 200. Likewise, blind via 248 is
adjacent to contact pad 256 to receive solder balls to provide
electrical and mechanical connection of the interconnect substrate
to the board. The solder balls are heated and reflowed to form
conductive bonds with contact pad 256 and therefore are
electrically connected to via 248, thereby interconnecting I/O's on
the interconnect module with I/O's on the PWB. The blind and buried
vias present a low inductance signal path, further reducing
impedance in interconnect substrate 200.
EXAMPLES
[0062] All percents, ratios and amounts are by weight unless
otherwise specified.
[0063] Laminated articles containing composite dielectric material
were made as follows:
[0064] Silica surface treatment: 900 g silica (SiO.sub.2) particles
(SO-E.sub.2 available from Tatsumori Ltd., Tokyo, Japan; average
particle size: 0.5 .mu.m) were dispersed into 900 g of methyl ethyl
ketone (MEK--available from J T Baker, Phillipsburg, N.J.). Then 9
g of vinyl triacetoxysilane (VTAS--available from Aldrich Chemical
Co., Milwaukee, Wis.) was added. After stirring at room temperature
for about 15 minutes, 20 g of deionized water was added. The
dispersion was refluxed under nitrogen for 24 hours. After cooling,
about half of the MEK was removed by vacuum distillation with a
rotary evaporator. Then about 500 g of toluene (available from EM
Science, Gibbstown, N.J.) was added. After removing half of the
solvent by rotary evaporation, about 700 g of additional toluene
was added. After this solvent exchange, the silica dispersion in
toluene [contained small amount (<10%) of MEK] had a solid
content of 53%.
[0065] Composite Dielectric dispersion formulation: To the above
silica dispersion, 727 g of toughened BCB resin (an Experimental
CYCLOTENE resin XUR-JW-1148-200201415-47 in Mesitylene, about 53 wt
% solid content, available from Dow Chemical Company, Midland,
Mich.) was added. After stirring, a composite dielectric dispersion
was obtained. Composite dielectric dispersions with varying amounts
of treated silica filler content were prepared by adjusting the
amount of toughened BCB material added to the silica
dispersion.
[0066] Priming the Cu foil: Copper foils were treated with fresh 1%
vinyltriacetoxysilane (VTAS) solution in 95% ethanol. Alternatively
a 1% aminopropylsilane (APS) solution in water (available from
Aldrich Chemical Co., Milwaukee, Wis.) may be used. After the
copper foils were coated with the silane solution, they were baked
for 15 minutes at 140.degree. C. to 150.degree. C. Table 1
summarizes the copper substrates that were evaluated.
TABLE-US-00001 TABLE 1 Summary of Copper substrates 5 .mu.m copper
5 .mu.m Very low.sup.2 Cr/Zn Metfoils Gray (30 .mu.m Al backing)
(Perstorp, appearance Sweeden) 5 .mu.m copper 5 .mu.m Very low Cr
Metfoils Pink reddish (30 .mu.m Al backing) (Perstorp, appearance
Sweden) 3 .mu.m Olin XTF.sup.1 3 .mu.m Very low Cr/Zn Olin Peelable
(Norwalk, CT) copper 3 .mu.m Oak Mitsui 3 .mu.m Very low Cr/Zn Oak
Mitsui Peelable Microthin.sup.1 (Hoosick Falls, copper NY) 18 .mu.m
JTC foil 18 .mu.m Standard.sup.2 Cr/Zn with Gould epoxy silane
(Eastlake, OH) 18 .mu.m Oak Mitsui 18 .mu.m Standard Cr/Zn Oak
Mitsui foil (Hoosick Falls, NY 18 .mu.m Olin Cu 18 .mu.m Very low
Cr/Zn Olin Copper (Norwalk, CT) Bond Finish .sup.1With 35 .mu.m
Peelable Cu backing. .sup.2According to IPC-4562: Metal Foil for
Printed Wiring Applications and IPC-CF-148A: Resin Coated Metal
Foil for Printed Boards, low profile copper has a maximum foil
profile variation (R.sub.z) < 5.1 .mu.m; medium profile has 5.1
.mu.m < R.sub.z < 10.2 .mu.m; and standard profile has
R.sub.z > 10.2 .mu.m. Most vendor foils follow the IPC
standards.
[0067] Precision coating: The composite dielectric dispersions were
coated onto the primed copper foils using a knurl or extrusion
coater and dried at a temperature in the range of about 90.degree.
C. to about 150.degree. C. for a period of about 5 to about 20
minutes. The final film thicknesses were controlled from 15 to 38
.mu.m.
[0068] Lamination: The coated copper foils were then laminated with
VTAS-treated copper foil (such that the composite dielectric
material was between the copper foils) at 177.degree. C. for 1 hr,
then 235.degree. C. for 2 hrs with a pressure of 800 psi (5.52
MPa). Alternatively two dielectric coated copper films can be
laminated together when thicker films are desired.
[0069] Peel Adhesion Testing: Peel adhesion testing was done
according to a modified version of IPC-TM-650, Test Method Manual,
Number 2.4.8, "Peel Strength of Metallic Clad Laminates". After
cooling, the laminated copper/dielectric composite/copper laminate
were first hand cut to 6.5''.times.1.25'', (about 15 cm.times.3 cm)
then were further trimmed to 6.5''.times.1'' (about 15 cm.times.2.5
cm) using a JDC precision sample cutter made by Thwing-Albert
Instrument Company (Philadelphia, Pa.). The test sample was then
pressed onto a 6'' diameter aluminum wheel fixture on an INSTRON
type tensile tester using a 6.5''.times.1'' (about 15 cm.times.2.5
cm) 3M SCOTCH brand VHB tape. One end of the test sample was lifted
and securely clamped onto the moving crosshead. The peel test was
conducted at 2 in/min (about 5 cm/min) fixed travel speed. Peel
data was collected at 1 Hz sampling rate and data averaging was
typically done over 2.5'' (about 6 cm) peel distance.
Properties and Results
[0070] Table 2 shows the CTE of the composite dielectric materials
(containing treated SiO.sub.2 as the inorganic filler) as a
function of filler content. Measurements were made after coating
the composite dielectric material onto a liner and curing the
dielectric material at different temperatures for one hour.
Measurements were made on free-standing films of the composite
dielectric material. The relationship between filler content in the
resin and resulting CTE is almost linear. TABLE-US-00002 TABLE 2
CTE of an SiO.sub.2 filled dielectric composite material as a
function of SiO.sub.2 filler content 0 85 67 16 79 54 38 61 42 60
43 35 75 28 24
[0071] Table 3 documents the relationship between filler content of
an SiO.sub.2 dielectric composite material of the current invention
and adhesion to copper. Tables 3 and 4 provide specific adhesion
data for the SiO.sub.2 dielectric composite material as a function
of filler loading levels.
[0072] Adhesion of materials to thin copper substrates,
particularly those substrates with a thickness less than 5 .mu.m,
is needed for electronic packages, but can be challenging. In terms
of adhesion of treated SiO.sub.2 dielectric composite materials to
copper foils, each of the copper substrates showed different peel
strengths and adhesion failure modes. Generally, incorporation of
increasing amounts of filler into the toughened BCB resin has a
negative effect on adhesion to copper. The effect of silanes (type,
thickness, baking temperature) varied on different copper surfaces.
Certain silane primers such as VTAS and APS are efficient in
improving copper adhesion to SiO.sub.2 dielectric composite
material and result in a `cohesive` failure mode, which is much
preferred over an adhesive failure mode. TABLE-US-00003 TABLE 3
Relationship between untreated SiO.sub.2 filler content of a
composite dielectric material and adhesion to 18 .mu.m JTC Copper
(Cr/Zn epoxy silane surface treatment) 0 18 .mu.m JTC foil 2.8/0.48
60 18 .mu.m JTC foil 2.3/0.40 70 18 .mu.m JTC foil 2.3/0.40 75 18
.mu.m JTC foil 1.5/0.26
[0073] TABLE-US-00004 TABLE 4 Relationship between treated
SiO.sub.2 filler content of a dielectric composite material and
adhesion to 5 .mu.m Metfoils (Zinc rich surface treatment) with a
30 .mu.m aluminum backing 0 4.2/0.73 4.3/0.75 60 4.0/0.70 4.1/0.72
70 3.2/0.56 3.9/0.68 72.5 3.0/0.52 3.5/0.64 75 2.5/0.44 0.8/0.14 80
Not determined 0 *If the copper is unprimed and the filler content
is about 70%, the peel strength will be about 0.6 lb/in (0.11
N/mm). "Coated Side" refers to the copper surfaces on which the
composite dielectric dispersion was originally coated (and dried).
"Laminated side" refers to the copper surface to which the dried
dielectric (on the coated side) is laminated.
[0074] Table 5 summarizes key mechanical and electrical properties
of the original unmodified BCB resin and the toughened BCB starting
resin compared to the properties of the treated SiO.sub.2-filled
toughened BCB composite resin system (BCB-SiO.sub.2). These
properties include the isotropic CTE, dielectric constant
(D.sub.k), dielectric loss (loss factor) and the percent elongation
to break of the various materials listed. Dielectric constant was
measured at 9.3 GHz. TABLE-US-00005 TABLE 5 Comparison of material
properties of components of a dielectric composite material
Original BCB 52 2.50 0.0018 7% Toughened BCB (15% 85 2.40 0.0018
25% toughening agent) SiO.sub.2 0.5 4.0 <0.001 -- BCB-SiO.sub.2
(70% filler) 32 3.0 0.002 2.5%
[0075] The dielectric measurements were made on free-standing
dielectric films using a known split-post dielectric and magnetic
resonator technique. The thin material or film to be tested was
inserted between two fixed dielectric resonators. The resonator
measured the permittivity component in the plane of the specimen.
The split-post resonator is used to make dielectric measurements in
the low gigahertz region from about 1.1 GHz to about 35 GHz.
[0076] To have a higher elongation (greater than 2%) for the
dielectric composite material, it is useful for the original resin
to have elongation higher than about 25%.
[0077] It should be understood that the drawings and detailed
description herein are to be regarded in an illustrative rather
than a restrictive manner, and are not intended to limit the
invention to the particular forms and examples disclosed. On the
contrary, the invention includes any further modifications,
changes, rearrangements, substitutions, alternatives, design
choices, and embodiments apparent to those of ordinary skill in the
art, without departing from the spirit and scope of this invention,
as defined by the following claims. Thus, it is intended that the
following claims be interpreted to embrace all such further
modifications, changes, rearrangements, substitutions,
alternatives, design choices, and embodiments.
* * * * *