U.S. patent application number 11/434544 was filed with the patent office on 2007-03-08 for high density led array.
Invention is credited to Duwayne R. Anderson, Mark D. Owen.
Application Number | 20070051964 11/434544 |
Document ID | / |
Family ID | 35150647 |
Filed Date | 2007-03-08 |
United States Patent
Application |
20070051964 |
Kind Code |
A1 |
Owen; Mark D. ; et
al. |
March 8, 2007 |
High density led array
Abstract
A dense array of semiconductor devices having an array of
micro-reflectors, the micro-reflectors having characteristics that
enhance dense packing of the array in balance with collection and
collimation of the array's radiant output.
Inventors: |
Owen; Mark D.; (Beaverton,
OR) ; Anderson; Duwayne R.; (Saint Helens,
OR) |
Correspondence
Address: |
GANZ LAW, P.C.
P O BOX 2200
HILLSBORO
OR
97123
US
|
Family ID: |
35150647 |
Appl. No.: |
11/434544 |
Filed: |
May 12, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11104954 |
Apr 12, 2005 |
7071493 |
|
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11434544 |
May 12, 2006 |
|
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60561771 |
Apr 12, 2004 |
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Current U.S.
Class: |
257/98 ; 257/99;
257/E25.02; 257/E33.072; 438/27 |
Current CPC
Class: |
H01L 33/60 20130101;
F21K 9/00 20130101; H01L 33/648 20130101; H01L 33/644 20130101;
H01L 2924/00 20130101; H01L 25/0753 20130101; H01L 2924/0002
20130101; H01L 2924/0002 20130101 |
Class at
Publication: |
257/098 ;
257/099; 438/027; 257/E33.072 |
International
Class: |
H01L 33/00 20060101
H01L033/00; H01L 21/00 20060101 H01L021/00 |
Claims
1-20. (canceled)
21. A dense array of light emitting semiconductor devices, the
array providing radiant output directed to a work piece, the array
comprising: a first light emitting semiconductor device; a first
power trace, the first power trace providing power to the first
light emitting semiconductor device, and the first power trace
having an edge; a first micro-reflector element, such element being
formed using the first power trace and having the first light
emitting semiconductor device associated therewith so as to reflect
emitted light, and such element including a packing edge associated
with the first power trace's edge; a second light emitting
semiconductor device; a second power trace, the second power trace
providing power to the second light emitting semiconductor device,
and the second power trace having an edge, a second micro-reflector
element, such element being formed using the second power trace and
having the second light emitting semiconductor device associated
therewith so as to reflect emitted light, and such element
including a packing edge associated with the second power trace's
edge; wherein the first and the second light emitting semiconductor
devices are adjacently disposed such that the separation between
the first and the second light emitting semiconductor devices
follows from: (a) the distance that the packing edge of the first
micro-reflector element extends from the first light emitting
semiconductor device toward the second light emitting semiconductor
device; (b) the distance that the packing edge of the second
micro-reflector element extends from the second light emitting
semiconductor device toward the first light emitting semiconductor
device; and (c) the selected distance separating the respective
packing edges of such first and the second light emitting
semiconductor devices.
22. The dense array of claim 21, wherein the first micro-reflector
element is an area of the first power trace that is associated with
the first light emitting semiconductor device, such element's
packing edge being the first power trace's edge.
23. The dense array of claim 22, wherein the second micro-reflector
element is an area of the second power trace that is associated
with the second light emitting semiconductor device, such element's
packing edge being the second power trace's edge.
24. The dense array of claim 23, wherein the first power trace and
the second power trace are formed as portions of a single power
trace.
25. The dense array of claim 22, wherein the area has one or more
reflective surfaces.
26. The dense array of claim 25, wherein the one or more reflective
surfaces are implemented so as to reflect one or more selected
spectra of the light emitting semiconductor device.
27. The dense array of claim 25, wherein the one or more reflective
surfaces are provided only in the area of the first power trace
associated with the first light emitting semiconductor device.
28. The dense array of claim 25, wherein the one or more reflective
surfaces are provided for portions of the first power trace not
associated with the first light emitting semiconductor device.
29. The dense array of claim 22, wherein the first power trace is
formed in a layer disposed on top of a substrate, such that the
area is a portion of such layer.
30. The dense array of claim 29, wherein the first power trace is
formed using lithographic technology, such that the first
micro-reflector element is formed as a substantially flat
surface.
31. The dense array of claim 29, wherein the first power trace is
formed using a stamping process that stamps the first power trace,
such that the first micro-reflector element is a volumetric form
stamped in the first power trace.
32. The dense array of claim 29, wherein the first power trace is
formed having a substantially flat surface by using lithographic
technology, and the first micro-reflector element is a volumetric
form stamped in the first power trace by using a stamping
process.
33. The dense array of claim 21, further comprising coupling optics
interposed between (a) at least one of the first and second light
emitting semiconductor devices and (b) the work piece, and wherein
the coupling optics comprise one or more of a lens, micro-lens
array, layer, material, structure, or a combination of two or more
of any such lens, micro-lens array, layer, material or structure,
so as to enhance packing density of the first and second light
emitting semiconductor devices.
34. The dense array of claim 33, wherein the coupling optics are
implemented to enhance packing density in balance with enhancing
collection, condensing and/or collimation of the light of one or
both of the first and second light emitting semiconductor devices,
including such light as is reflected by the respective first and/or
second micro-reflector element.
35. The dense array of claim 33, wherein the coupling optics has an
interface and, in association with such interface, a selected index
of refraction, so as to control reflection of light at such
interface by directing or re-directing light reflected by the
respective first and/or second micro-reflector element.
36. The dense array of claim 33, wherein the coupling optics is
provided so as to address the optical cost associated with the
first and/or second micro-reflector elements selected to enhance
dense packing.
37. The dense array of claim 21, further comprising a plurality of
additional micro-reflector elements and wherein the first and
second micro-reflector elements, together with the plurality of
additional micro-reflector elements, are arranged in a pattern
thereamong.
38. The dense array of claim 37, wherein the pattern responds to
one or more of (a) coupling optics, (b) the number, size, and/or
type of light emitting semiconductor devices associated with each
such micro-reflector element, and/or (c) the near field radiation
pattern of one or more such light emitting semiconductor
devices.
39. A photoreactive system, the system providing radiant output
directed to a work piece in association with a photoreaction, the
system comprising: a light emitting subsystem, the light emitting
subsystem including a dense array of light emitting semiconductor
devices, including a first light emitting semiconductor device and
a second light emitting semiconductor device; the array having a
plurality of micro-reflector elements, including a first
micro-reflector element and a second micro-reflector element, said
first micro-reflector element having the first light emitting
semiconductor device associated therewith so as to reflect emitted
light, and such first micro-reflector element including a packing
edge, and said second micro-reflector element having the second
light emitting semiconductor device associated therewith so as to
reflect emitted light, and such second micro-reflector element
including a packing edge; a first power trace and a second power
trace, said first micro-reflector element being formed using the
first power trace such that the element's packing edge is
associated with the first power trace's edge and said second
micro-reflector element being formed using the second power trace
such that the element's packing edge is associated with the second
power trace's edge; wherein the first and the second light emitting
semiconductor devices are adjacently disposed such that the
separation between the first and the second light emitting
semiconductor devices follows from: (a) the distance that the
packing edge of the first micro-reflector element extends from the
first light emitting semiconductor device toward the second light
emitting semiconductor device; (b) the distance that the packing
edge of the second micro-reflector element extends from the second
light emitting semiconductor device toward the first light emitting
semiconductor device; and (c) the selected distance separating the
respective packing edges of such first and the second light
emitting semiconductor devices.
40. The photoreactive system of claim 39, wherein: (a) the first
micro-reflector element is an area of the first power trace that is
associated with the first light emitting semiconductor device, such
element's packing edge being the first power trace's edge; (b) the
second micro-reflector element is an area of the second power trace
that is associated with the second light emitting semiconductor
device, such element's packing edge being the second power trace's
edge; and (c) the first power trace and the second power trace are
formed as portions of a single power trace.
Description
RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 11/104,954, filed Apr. 12, 2005, entitled
"HIGH DENSITY LED ARRAY," which claims priority to and the benefit
of U.S. Provisional Application Ser. No. 60/561,771, filed Apr. 12,
2004, entitled "COLLIMATION AND DIRECT LIQUID COOLING OF
HIGH-DENSITY LED ARRAYS", the contents of which are hereby
incorporated by reference, as if recited herein in full, for all
purposes.
BACKGROUND OF THE INVENTION
[0002] This invention relates to high-density light emitting
semiconductor device arrays and, more particularly, to a light
emitting diode (LED) array having optical elements directed toward
optimizing high-density packing of the LEDs in balance with
collection and collimation of the LEDs' radiant output.
[0003] Light-emitting semiconductor devices may be arranged in
various configurations, such as arrays, for lighting applications.
Examples of these applications include: lithographic processes
used, e.g., in fabricating semiconductor devices, and curing
processes used, e.g., for ink printing and fabrication of DVDs.
These applications generally have associated parameters, including,
e.g., a photoreaction may contemplate provision of one or more
radiant power densities at the work surface, at one or more
wavelengths, applied over one or more periods of time and within
thermal limitations.
[0004] In these applications, the light emitting semiconductor
devices generally are employed to deliver against the parameters.
At the same time, the light emitting semiconductor devices
typically have certain operating characteristics and
specifications. The characteristics include: total power emitted;
power stability; radiance; radiant intensity; the wavelength(s) of
the radiant output; the coherence of the radiant output; the
collimation of the radiant output; as well as other operative
functionalities provided by the semiconductor device as a light
system (e.g., ability to provide pulsed operation and/or effective
thermal management). In turn, the light emitting semiconductor
device's specifications generally are associated with its
fabrication and, among other things, are directed to preclude
destruction and/or forestall degradation of the devices. These
specifications generally include operating temperatures and
applied, electrical power.
[0005] Where the application requires delivery of a relatively high
radiant power density at or across the work surface, a LED array
may have some difficulty in that delivery. That follows because a
typical LED in an array has a widely distributed radiant output.
Indeed, a typical LED mounted alone on a planar substrate will
exhibit a radiant output distributed characteristically across the
hemisphere centered at the LED. Given such distribution, only some
portion, often relatively small, of that radiant output is directed
toward the work surface, thus diminishing the radiant power density
at or across the surface. Moreover, such distribution implicates
that, as the work surface becomes more physically separated from
the LED, the radiant power density at or across the work surface
will decrease rapidly, i.e., the decrease generally is anticipated
to be proportional to the square of the separation.
[0006] Several approaches may be used to achieve radiant power
density from a LED array so as to properly perform a particular
process. In one example approach, a basic LED array may simply be
disposed physically proximate the work surface. However, even if
close proximity delivers appropriate power density, this approach
generally is undesirable because, e.g., close proximity tends to
necessitate undesirable changes to tooling and/or shielding. In
another example approach, an array may locate conventional
refractive lenses above the LEDs. This approach contemplates that
each LED is associated with a conventional lens so that the lens
collects and collimates the LED's radiant output. While this
approach will tend to increase radiant power density, collecting
and collimated a substantial preponderance of any LED's distributed
radiant output contemplates a lens having a relatively large
diameter, as well as other challenges. While this provides some
performance increase, achieving the necessary diameter may be
difficult, if not impossible. Moreover, using a lens of such
diameter may be at odds with use of a densely-packed LED array and,
as such, would be undesirable.
[0007] Another example approach to enhancing radiant power density
contemplates using conventional reflective optics. In this
approach, a LED is mounted in a reflector (e.g., having a parabolic
form). Unlike refractive optics, reflective optics generally
collect and collimate a substantial portion of the LED's radiant
output. Even so, conventional reflective optics generally are not
used in a tightly packed or dense array because of their size. For
example, a typical application of conventional reflective optics is
illustrated by LED flashlights in which one or more LEDs are
mounted in a large reflective optic, so that the optic collects
light from such LEDs.
[0008] Accordingly, there is a need for high-density light emitting
semiconductor device array and, more particularly, for LED arrays
having optical elements directed toward optimizing high-density
packing of the LEDs in balance with collection and collimation of
the LEDs' radiant output.
SUMMARY OF THE INVENTION
[0009] An array of light emitting semiconductor devices in
accordance with the invention includes optical elements selected
toward optimizing high-density packing of the devices in the array
in balance with collection and collimation of the devices' radiant
output.
[0010] In an example embodiment in accordance with the invention,
an array of LEDs is coupled with a micro-reflector array, which
micro-reflector array includes a plurality of micro-reflector
elements. Each such micro-reflector element is a parabolic
reflector, or otherwise has a basic volumetric form associated with
a selected surface of revolution.
[0011] Each such micro-reflector element has a lower portion and an
upper portion. The upper portion is characterized by a packing edge
having a selected perimeter shape. The perimeter shape, if
responsive to the volumetric form, will be a circle, because this
shape is the outline of any cross-section taken at the upper
portion of an element having a volumetric form associated with a
surface of revolution. Because circles do not pack as densely as
may be desired and because, when packed, circles leave gaps there
between, in this example embodiment, each individual element's
packing edge preferably has a perimeter shape other than that
responsive to the volumetric form. That is, the packing edge
preferably has a perimeter shape selected so as to enhance mating
with the packing edges of the micro-reflector elements adjacent
such individual element in the array and, thereby, among other
things, increase the packing density of the LED array. To
illustrate, the packing edge typically is a selected polygon, such
as a square or a hexagon.
[0012] In other example embodiments, the micro-reflector array
comprises more than one type of micro-reflector element, the
pluralities of each such type of elements typically being arranged
in a selected pattern thereamong. An example includes employing one
micro-reflector element having a packing edge of one perimeter
shape and another micro-reflector element having a packing edge of
a second perimeter shape. In this example, various combinations of
perimeter shapes may be used without deviating from the principles
of the invention, including: (a) one perimeter shape being a
circle, with the other being a polygon; (b) both perimeter shapes
being circles, but with different radii and (c) both perimeter
shapes being polygons, but the polygons being different in type
and/or size (e.g., squares and octagons). In this example, as well,
off-setting the micro-reflector elements in the array may be
employed to enhance packing density. Moreover, in this example, the
two elements' volumetric forms typically will be distinct,
including: (i) both associated with the same type of surface of
revolution (e.g., both parabolic), but having different size; (ii)
each being associated with a respective, but different type of
surface of revolution (e.g., one parabolic and the other non-
parabolic); (iii) one associated with a surface of revolution and
the other being a selected polyhedron; and (iv) each being
associated with a respective, but different type or size of
polyhedron.
[0013] These and other embodiments are described in more detail in
the following detailed descriptions and the figures.
[0014] The foregoing is not intended to be an exhaustive list of
embodiments and features of the present invention. Persons skilled
in the art are capable of appreciating other embodiments and
features from the following detailed description in conjunction
with the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a block diagram of a photoreactive system in
accordance with the invention.
[0016] FIG. 2 is a top view of a portion of a dense LED array.
[0017] FIG. 3 shows a side view of the LED array of FIG. 2, taken
along line 3-3.
[0018] FIG. 4 is a top view of a portion of a dense LED array, in
accordance with the invention.
[0019] FIG. 5 shows a side view of the LED array of FIG. 2, taken
along line 5-5.
[0020] FIG. 6 shows an example embodiment in accordance with the
invention.
[0021] FIG. 7 shows examples of perimeter shapes and patterns, in
accordance with the invention.
[0022] FIG. 8 shows examples of smooth and stepped transitions in
micro-reflector elements, in accordance with the invention.
[0023] FIG. 9 shows a micro-reflector element, depicting change in
volumetric form associated with various perimeter shapes, in
accordance with the invention.
[0024] FIG. 10 shows a first approach for direct cooling an array,
in accordance with the invention.
[0025] FIG. 11 shows a second approach for direct cooling an array,
in accordance with the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0026] FIG. 1 is a block diagram of a photoreactive system 10 in
accordance with the invention. In this example embodiment, the
photoreactive system 10 comprises a light emitting subsystem 12, a
controller 14, a power source 16 and a cooling subsystem 18.
[0027] The light emitting subsystem 12 preferably comprises a
plurality of semiconductor devices 19. The semiconductor devices
provide a radiant output 24. The radiant output 24 is directed to a
work piece 26. Returned radiation 28 may be directed back to the
light emitting system 12 from the work piece 26 (e.g., via
reflection of the radiant output 24).
[0028] The radiant output 24 preferably is directed to the work
piece 26 via coupling optics 30. The coupling optics 30 include a
micro-reflector array. In employing such micro-reflector array,
each semiconductor device providing radiant output 24 is associated
with a respective micro-reflector element on a selected basis. As
an example, each micro-reflector element of the array may have one
associated LED. As another example, each micro-reflector may have
more than one associated LED, e.g., three LEDs, one emitting in the
green spectrum, one emitting in the red spectrum and one emitting
in the blue spectrum. Use of micro-reflector arrays, including
various numbers, arrangements and other relationships of LEDs to
micro-reflector elements, so as to enhance radiant output, is shown
and described in U.S. patent application Ser. No. 11/084,466, filed
Mar. 18, 2005 (Attorney Docket No. PHO-2.010.US), entitled
"MICRO-REFLECTORS ON A SUBSTRATE FOR HIGH-DENSITY LED ARRAY", which
application claims priority from U.S. Provisional Application Ser.
No. 60/554,628, filed Mar. 18, 2004, the contents of which are
hereby incorporated by reference, as if recited in full herein, for
all purposes.
[0029] The coupling optics 30 may also include other layers,
materials, structure or other elements, any or all of which
elements may be variously implemented without departing from the
principles of this invention. Such one or more layers, materials or
other structure may be interposed between the semiconductor devices
19 and the work piece 26. As an example, the coupling optics 30 may
include one or more lenses, or a micro-lens array, disposed between
the devices 19 and the work piece 26, so as to enhance collection,
condensing, or collimation of one or more device's radiant output
and/or to otherwise improve the quality or effective quantity of
the radiant output 24 (as well as the radiant power density at or
about the work piece 26).
[0030] Preferably, each of the layers, materials or other structure
of the coupling optics 30 interposed in the path of the radiant
output 24 (and/or returned radiation 28) have a selected index of
refraction. By properly selecting each index of refraction,
reflection at interfaces between layers, materials and other
structure may be selectively controlled. As an example, by
controlling differences in such indexes at a selected interface
disposed between the semiconductor devices 19 and the work piece
26, reflection at that interface may be controlled. Such control
could be to reduce the reflection, toward eliminating or, at least,
minimizing it, so as to enhance the transmission of radiant output
at that interface for ultimate delivery to the work piece 26. Such
control could also be to direct or re-direct selected radiation for
other predetermined objectives. Control of indexes of refraction so
as to enhance radiant output is shown and described in U.S. patent
application Ser. No. 11/083,525, filed Mar. 18, 2005 (Attorney
Docket No. PHO-2.009.US), entitled "DIRECT COOLING OF LEDS", which
application claims priority from U.S. Provisional Application Ser.
No. 60/554,632, filed Mar. 18, 2004, the contents of which are
hereby incorporated by reference, as if recited in full herein, for
all purposes.
[0031] Coupling optics 30 may be employed for various purposes.
Example purposes include, among others, to protect the
semiconductor devices 19, to retain cooling fluid associated with
the cooling subsystem 18, to collect, condense and/or collimate the
radiant output 24, to collect, direct or reject returned radiation
28, or for other purposes, alone or in combination. Generally,
however, as described further herein, coupling optics 30 in
accordance with the invention are employed and implemented so as to
enhance packing density of the devices in the array in balance with
and while enhancing the effective quality or quantity of the
devices' radiant output 24 (e.g., through collection and
collimation), particularly as that output is directed to the work
piece 26.
[0032] Selected of the plurality of semiconductor devices 19 may be
coupled to the controller 14 via coupling electronics 22, so as to
provide data to the controller 14. As described further below, the
controller preferably is also implemented to control such
data-providing semiconductor devices, e.g., again via coupling
electronics 22. The controller 14 preferably is also connected to,
and implemented to control, each of the power source 16 and the
cooling subsystem 18. Moreover, the controller 14 preferably
receives data from respective such source 16 and subsystem 18.
[0033] In addition to the power source 16, cooling subsystem 18 and
light emitting subsystem 12, the controller 14 may also be
connected to, and implemented to control, elements 32, 34. Element
32, as shown, is internal of the photoreactive system 10. Element
34, as shown, is external of the photoreactive system 10, but is
understood to be associated with the work piece 26 (e.g., handling,
cooling or other external equipment) or to be active in, or
otherwise related to performance of, the photoreaction the system
10 supports.
[0034] The data received by the controller 14 from one or more of
the power source 16, the cooling subsystem 18, the light emitting
subsystem 12, and/or elements 32, 34, may be of various types. As
an example the data may be representative of one or more
characteristics associated with semiconductor devices 19,
respectively. As another example, the data may be representative of
one or more characteristics associated with the respective
component 12, 16, 18, 32, 34 providing the data. As still another
example, the data may be representative of one or more
characteristics associated with the work piece 26 (e.g.,
representative of the radiant power density or spectral
component(s) delivered to the work piece). As a further example,
the data may be representative of characteristics associated with
the photoreaction (e.g., so as to monitor and control the
photoreaction's progress, quality, or other indicators). Moreover,
the data may be representative of some combination of these
characteristics.
[0035] The controller 14, in receipt of any such data, preferably
is implemented to respond to that data. Preferably, responsive to
such data from any such component, the controller 14 is implemented
to control one or more of the power source 16, cooling subsystem
18, light emitting subsystem 12 (including one or more such coupled
semiconductor devices), and/or the elements 32, 34. As an example,
responsive to data from the light emitting subsystem indicating
that the radiant power density is insufficient, the controller 14
may be implemented to either (a) increase the power source's supply
of power to one or more of the semiconductor devices, (b) increase
cooling of the light emitting subsystem via the cooling subsystem
18 (i.e., certain light emitting devices, if cooled, provide
greater radiant output), (c) increase the time during which the
power is supplied to such devices, or (d) a combination of the
above.
[0036] The cooling subsystem 18 is implemented to manage the
thermal behavior of the light emitting subsystem 12. That is,
generally, the cooling subsystem 18 provides for cooling of such
subsystem 12 and, more specifically, the semiconductor devices 19.
The cooling subsystem 18 may also be implemented to cool the work
piece 26 and/or the space between the piece 26 and the
photoreactive system 10 (e.g., particularly, the light emitting
subsystem 12). Cooling systems providing thermal management in
photoreactive systems generally, and providing for direct cooling
of light emitting semiconductor devices in particular, are shown
and described in U.S. patent application Ser. No. 11/083,525, filed
Mar. 18, 2005 (Attorney Docket No. PHO-2.009.US), previously
referenced.
[0037] The photoreactive system 10 may be used for various
applications. Examples include, without limitation, curing
applications ranging from ink printing to the fabrication of DVDs
and lithography. Generally, the applications in which the
photoreactive system 10 is employed have associated parameters.
That is, an application may contemplate parameters such as:
provision of one or more levels of radiant power density, at one or
more wavelengths, applied over one or more periods of time and
within thermal limitations. In these applications, the
semiconductor devices 19 generally are employed to deliver against
the parameters. However, the semiconductor devices 19 typically
have certain operating specifications, which specifications
generally are associated with the semiconductor devices'
fabrication and, among other things, should be followed in order to
preclude destruction and/or forestall degradation of the devices.
As well, other components of the system 10 also typically have
associated operating specifications. These specifications generally
include ranges (e.g., maximum and minimum) for operating
temperatures and applied, electrical power. Accordingly, the
photoreactive system 10 preferably supports monitoring of the
application's parameters. In addition, the photoreactive system 10
preferably provides for monitoring of the semiconductor devices 19,
including as to respective characteristics and specifications.
Moreover, the photoreactive system 10 preferably also provides for
monitoring of selected other components of the system 10, including
as to respective characteristics and specifications. Providing such
monitoring enables verification of the system's proper operation
and, conversely, determination as to whether the system 10 is
operating in any way other than properly. Monitoring also supports
control of the system's operation, such as to enable and/or enhance
the system's proper operation and/or performance of the application
(e.g., to balance between the array's radiant output and its
operating temperature, so as to preclude heating the array beyond
its specifications while also directing radiant energy to the work
piece 26 sufficient to properly complete the photoreaction(s) of
the application). Such monitoring and control in a photoreactive
system is shown and described in U.S. patent application Ser. No.
11/095,210, filed Mar. 30, 2005 (Attorney Docket No. PHO-2.008.US),
entitled "LED ARRAY HAVING ARRAY-BASED LED DETECTORS", which
application claims priority from U.S. Provisional Application Ser.
No. 60/558,205, filed Mar. 30, 2004, the contents of which are
hereby incorporated by reference, as if recited in full herein, for
all purposes.
[0038] Generally, it is recognized that some applications may
require relatively high radiant power density at or about the work
piece, so as to properly perform the application. Accordingly, it
is desirable to implement a light emitting subsystem 12 that can
deliver such power density. To do so, the subsystem 12 preferably
is implemented using a dense array of light emitting semiconductor
devices 19. In particular, the subsystem 12 preferably is
implemented using a high-density, light emitting diode (LED) array.
As previously described, the LED array preferably is associated
with coupling optics 30 in the form of a micro-reflector array. A
high-density LED array is shown and described in U.S. patent
application Ser. No. 10/984,589, filed Nov. 8, 2004, the contents
of which are hereby incorporated by reference, as if recited in
full herein, for all purposes. Moreover, a high-density array
having a micro-reflector array is shown and described in U.S.
patent application Ser. No. 11/084,466, filed Mar. 18, 2005
(Attorney Docket No. PHO-2.010.US), previously referenced. Although
LED arrays may be used and are described in detail herein, it is
understood that the semiconductor devices 19, and array(s) 20 of
same, may be implemented using other light emitting technologies
without departing from the principles of the invention, which
technologies include, without limitation, organic LEDs, laser
diodes, and other semiconductor lasers.
[0039] FIG. 2 is a top view of a portion of a dense LED array 50 as
shown and described in the documents previously incorporated by
reference. Although this array 50 omits certain aspects of the
invention, it is described with reference to FIGS. 2 and 3 because
it serves to illustrate aspects of, or relevant to, the
invention.
[0040] Array 50 is provided in a substrate 52 having a plurality of
micro-reflector elements 54 formed therein. A LED 56 is provided
within each micro-reflector element 54. Although only one LED is
shown associated with a micro-reflector element 54, it is
understood, as previously described, that each micro-reflector
element 54 may be associated with more than one LED without
departing from the principles of the invention.
[0041] In this array 50, each of the micro-reflector elements 54
typically is an opening in the substrate 52, the opening being void
or substantially void and having a selected volume and volumetric
form, so as to accommodate the associated one or more LEDs.
Although the elements 54 are shown implemented as openings in a
substrate, it is understood that the elements 54 may be otherwise
implemented without departing from the principles of the invention,
including, e.g., being formed in a layer or other material disposed
on top of the substrate or being formed in a combination of such
layer or other material together with a substrate having openings.
The substrate, layer and other materials may be any of a variety of
materials, without departing from the principles of the
invention.
[0042] The micro-reflector elements 54 may be implemented using
various technologies. As examples, the micro-reflector elements may
be formed using lithographical technology, machining, stamping,
casting, forging, or other processes, or combinations of one or
more of these. To illustrate, micro-reflector elements 54 may be
formed by etching, so as to provide truncated, inverted, square
pyramidal forms. To further illustrate, micro-reflector elements 54
may be formed by machining openings (e.g., via lasers and/or
plasma). To illustrate still further, micro-reflector elements 54
may be formed by stamping parabolic forms in copper or other
suitable material. To yet further illustrate, micro-reflector
elements 54 may also be formed by a combination of etching,
together with machining or other technology. In this further
illustration, a substrate is etched to form openings. Each opening
is then machined to provide desired shape or shapes.
[0043] FIG. 3 shows a side view of the LED array of FIG. 2, taken
along line 3-3. Each micro-reflector element 54 includes one or
more reflective surfaces 58. These reflective surface(s) 58
preferably are implemented so as to reflect one or more selected
spectra of the radiant output(s) of the respective LEDs 56 of the
array 50. The reflective surface(s) 58 may be implemented using
various processes, including, as non-exhaustive examples, via
selected metal or other coatings.
[0044] In this LED array, each such micro-reflector element 54 also
has a basic volumetric form. The basic volumetric form is the shape
that provides the basis for the collection and collimation of the
radiant output of the LEDs 56. Here, the basic volumetric form
correlates to a surface of revolution and, in particular, is
illustrated as a hemispherical form.
[0045] In turn, each such micro-reflector element 54 has an upper
portion 55, a lower portion 57 and a longitudinal axis 59 there
between. Each element 54 has a packing edge 60 disposed at the top
of the upper portion 55. The packing edge 60 has a selected
perimeter shape, the perimeter shape enclosing an area. The edge's
perimeter shape is understood to contribute to the packing
capabilities of the micro-reflector elements 54 in forming the
array 50.
[0046] As shown, the edge's perimeter shape is a circle. The
perimeter shape is such because it is responsive to the volumetric
form which is maintained in this micro-reflector element. Indeed,
the perimeter shape will be a circle whenever the element maintains
the volumetric form to the upper portion, because a circle is the
outline of any cross-section of any volumetric form correlative to
a surface of revolution.
[0047] With circular perimeter shapes for the edges of all
micro-reflector elements 54, the array 50 provides for packing of
LEDs 56 densely, but with some characteristics that provide avenues
for enhancement. As an example, packing based on circular perimeter
shapes leads to gaps 62 between the micro-reflector elements 54, in
which gaps no LED is present to provide radiant output and no
micro-reflector element collects or collimates. In addition, the
packing is dense, but less dense than is possible, e.g., with
micro-reflective elements having packing edges of non-circular
perimeter shapes.
[0048] Because circles do not pack as densely as may be desired and
because, when packed, circles leave gaps there between, example
embodiments of a LED array in accordance with the invention tend to
have at least one type of micro-reflector element characterized by
a packing edge having a perimeter shape other than that responsive
to the volumetric form, particularly if the volumetric form
correlates to a surface of revolution. More generally, the packing
edges of the micro-reflector array have one or more perimeter
shapes selected so as to enhance mating among packing edges across
the micro-reflector elements so as to enhance the packing density
of the LED array in balance with collection and collimation of the
emitting semiconductor devices' radiant output.
[0049] Turning to FIG. 4, a top view is shown of a portion of a
dense LED array 70, in accordance with the invention. Array 70 is
provided in a substrate 72 having a plurality of micro-reflector
elements 74 formed therein, such formation and implementation
thereof being as previously described. A LED 76 is provided within
each micro-reflector element 74. Again, although only one LED is
shown associated with a micro-reflector element 74, it is
understood, as previously described, that each micro-reflector
element 74 may be associated with more than one LED 76, without
departing from the principles of the invention.
[0050] Turning to FIG. 5, a side view is shown of the LED array 70
of FIG. 4, taken along line 5-5. Each micro-reflector element 74
includes one or more reflective surfaces 78. These reflective
surface(s) 78 preferably are implemented so as to reflect one or
more selected spectra of the radiant output(s) of the respective
LEDs 76. The reflective surface(s) 78 may be implemented using
various processes, including, as non-exhaustive examples, via
selected metal or other coatings.
[0051] In this LED array 70, each such micro-reflector element 74
has a basic volumetric form. As previously described, the basic
volumetric form provides the basis for the collection and
collimation of the radiant output of the LEDs 76. Here, the basic
volumetric form correlates to a volume resulting from a surface of
revolution and, as in FIGS. 2 and 3, is hemispherical. The
hemispherical form of the element 74 is illustrated via the
element's lower portion 80, together with phantom lines 82. The
phantom lines 82 indicate that, as is described below and unlike as
in FIGS. 2 and 3, the micro-reflector element 74 does not maintain
the basic volumetric form. Rather a selected upper portion 84 of
the element 74 follows a volumetric form or forms transitioning
(here immediately, but in other embodiments, step-wise or smoothly)
from the basic volumetric form so as to provide for the perimeter
shape of the element's packing edge 86.
[0052] Each micro-reflector element 74 has a packing edge 86. The
packing edge 86 has a selected perimeter shape. As previously
described, the perimeter shape is understood to contribute to the
packing capabilities of the micro-reflector elements 74 in forming
the array 70. As shown, the edge's perimeter shape is a square
(i.e., rather than the circle of FIGS. 2 and 3).
[0053] Because of the edge's square perimeter shape, the elements
of micro-reflector array 70 of FIGS. 4 and 5 tend to mate along
their adjacent edges (e.g., like tiles), thereby substantially
eliminating the gaps 62 that are shown in FIGS. 2 and 3. Moreover,
the micro-reflector elements 74 pack more closely center-to-center,
so that the array 70 is more dense than the array 50 of FIGS. 2 and
3. As to the packing density, an illustrative comparison is shown
in the FIGS. 2-5: for the array 50 of FIGS. 2 and 3, the distance
between LEDs 56 center-to-center is "d", "d" being equivalent to
the hemisphere's diameter, whereas, for the array 70 of FIGS. 4 and
5, the distance between LEDs is "d-2.DELTA." where "d" is again the
hemisphere's diameter and ".DELTA." is the lateral overlap of the
element's hemisphere relative to each adjacent hemisphere.
[0054] In this illustration, it is understood that the ".DELTA."
may vary depending on the selected area enclosed by the packing
edge relative to the projected area of the opening at the upper
portion of the micro-reflector were the micro-reflector to maintain
the basic volumetric form. This is illustrated in FIG. 6 in that
the ".DELTA." between the projected area of the parabolic form at
the upper portion 106, as delineated by phantom lines 115, will
vary depending on the type and size of the perimeter shape 112 of
the packing edge 110. As examples, ".DELTA.", and thus packing
density, will generally be inversely proportional to changes in the
size of hexagonal perimeter shape.
[0055] To further illustrate increased packing density via
selection of a square packing edge as shown in FIGS. 4-5, two
representative reflector elements 74 having square perimeter shapes
are depicted in FIG. 2, together with an indication of the
magnitude of 2.DELTA. relative to the cross-sectional area of the
upper portion 55 of micro-reflector element 54.
[0056] While selecting a packing edge may result in denser packing,
it is understood generally to result in an optical cost. As an
example, that selection may reduce collimation of the radiant
output of the LEDs 76 and, as such, potential reduction of radiant
power density at or about the work piece 26. This is illustrated in
FIG. 9, wherein a micro-reflector element 150 is shown, together
with changes in volumetric form associated with various packing
edge perimeter shapes 152a, 152b, 152c. The element 150 has
reflective surfaces 154, which surfaces are implemented so as to
collect and collimate the radiant output of a particular light
emitting semiconductor 156. However, regardless of the type of
perimeter shape, shapes 152a, 152b and 152c indicate that, as the
perimeter shape's size decreases (152c>152b>152a) relative to
the volumetric form, less and less of the surfaces 154 remain to
collect and collimate. To address this optical cost, as previously
described, additional coupling optics 30, such as a microlens array
disposed between the array 70 and the work piece 26, may be
employed. More generally, though, as a central aspect of the
invention, such selection of the type and size of the perimeter
shape(s) of a micro-reflector array--as well as, and in conjunction
with, selection of other coupling optics, the volumetric form(s),
the number, size, types and performance (e.g., near field radiation
pattern) of LEDs deployed in each micro-reflector element, and the
transition from the basic volumetric form to the perimeter
shape--is directed toward optimizing high-density packing of the
emitting semiconductor devices in the array in balance with
collection and collimation of the devices' radiant output.
[0057] Turning back to FIG. 6, an example embodiment is shown of
one LED 100 in a micro-reflector element 102, in accordance with
the invention. Here, the LED 100 is understood to be part of an LED
array, the LED array being coupled with an micro-reflector array,
which micro-reflector array includes a plurality of micro-reflector
elements substantially the same as micro-reflector element 102.
[0058] The micro-reflector element 102 has a lower portion 104 and
an upper portion 106, and a longitudinal axis 108 oriented and
extending therebetween. Such micro-reflector element 102 is a
parabolic reflector; that is, the element 102 has a basic
volumetric form correlating to a surface of revolution that forms a
parabolic volume. The micro-reflector element's lower portion 104
generally has disposed thereat the LED 100. However, as previously
stated, a plurality of LEDs may be associated with the element 102
and, in that case, generally will be disposed at or about the lower
portion 104.
[0059] The micro-reflector element's upper portion 106 is
characterized by a packing edge 110. The packing edge 110 has a
selected perimeter shape 112, here a hexagon. In this example
embodiment, this element's packing edge 110 has a perimeter shape
112 selected so as to enhance mating with the packing edges of the
other micro-reflector elements (not shown) that are adjacent to
this element in the array and decrease the separation,
center-to-center, of the LEDs in the array. The perimeter shape
preferably is also selected in contemplation of the effect such
shape has on the collection and collimation of the radiant output
of the LED (particularly, as such shape alters the
micro-reflector's volumetric form. Thereby, packing density of the
LED array is enhanced in balance with the collection and
collimation of the radiant output so as to optimize performance of
the array, particularly in the context of the photoreactive
application for which it is being employed.
[0060] While this example embodiment suggests that the
micro-reflector array provides a common packing edge 110 for all
its micro-reflector elements 102 (e.g., hexagons of the same size),
it is understood that the array may be otherwise configured. That
is, the micro-reflector array may be implemented to employ one
micro-reflector element 102 having a packing edge 110 of one
perimeter shape 112 and at least one other micro-reflector element
having a packing edge 110 of a second perimeter shape 112. In this
example and other embodiments, various combinations of perimeter
shapes may be used without deviating from the principles of the
invention, including: (a) one perimeter shape being a circle, with
the other being a polygon; (b) both perimeter shapes being circles,
but with different radii; and (c) both perimeter shapes being
polygons, but the polygons being of different types and/or sizes
(e.g., squares and octagons). In such example embodiments where the
micro-reflector array includes more than one type of
micro-reflector element, the pluralities of each such type of
elements typically are arranged in a selected pattern thereamong.
Such patterns may employ off-sets among elements in order to
enhance packing density Examples of these perimeter shapes and
patterns, including use of off-sets, are shown in FIG. 7.
[0061] Moreover, in such example embodiments where two types of
micro-reflector elements having different packing edges, such
elements will also typically have distinct volumetric forms.
Examples of various volumetric forms include: (i) both elements
correlating to the same type of surface of revolution (e.g., both
parabolic), but having different size; (ii) each element
correlating to a respective, but different type of surface of
revolution (e.g., one parabolic and the other non- parabolic);
(iii) one element correlating to a surface of revolution and the
other being a selected polyhedron; and (iv) each element being
associated with a respective, but different type and/or size of
polyhedron. Any such form may be truncated at either/both the
bottom or/and the top.
[0062] Turning back to FIG. 6, in order to provide a packing edge
110 of any such selected perimeter shape 112, the micro-reflector
element 102 is fabricated so as to selectively transition in form
along the longitudinal axis 108, at some point or range, between
the elements' lower and upper portions 104, 106. In that
transition, the cross-section of the element 102 changes from the
circles 116 given by the basic volumetric form (here, the parabolic
form) to the polygons 118 given by the packing edge 110 (here,
hexagons).
[0063] In FIG. 6, the transition is indicated by the circle 116, in
phantom lines, disposed in the lower portion 104 and by a portion
of a hexagon 118, in phantom lines, disposed at a transition
portion 120 of the element 102. The transition portion 120 is
understood to include the range along the longitudinal axis 108,
starting at initiation of the transition from the cross-section of
the basic volumetric form and ending where the cross-section of the
element 102 becomes the perimeter shape 112. Here, the transition
portion 120 is effectively a point along the longitudinal axis 108.
That is, the transition is immediate, in that the perimeter shape
112 is established and unchanged from the upper portion 106 toward
the lower portion 104, until its intersection with the basic
volumetric form.
[0064] As in FIG. 6, transition may be accomplished by providing
the exact, unchanged perimeter shape 112 of the packing edge 110
from the upper portion 106, toward the lower portion 104, until the
perimeter shape 112 intersects the basic volumetric form. Doing so,
effects an immediate transition at that intersection. However, in
the alternative, the transition may also be accomplished by
providing one or more intermediate cross-sectional shapes (e.g., in
the transition portion, having neither the circle(s) of the basic
volumetric form or the exact perimeter shape of the packing edge).
This alternative effects a smooth or stepped transition along the
longitudinal axis.
[0065] Examples of smooth and stepped transitions are shown in FIG.
8. In FIG. 8, for illustration, the basic volumetric form is
hemispheric and the packing edge's perimeter shape is square.
Again, an immediate transition is depicted by reference lines 112'.
These lines 112' represent that the perimeter shape 112 is
established and unchanged from the upper portion 106 toward the
lower portion 104, until the transition portion 120 is established
by intersection of the perimeter shape with the basic volumetric
form. In the alternative, the perimeter shape is projected toward
the lower portion, whereupon one or more cross-sections are used in
transition between the perimeter shape (e.g., polygon) and the
basic volumetric form's circles. More specifically, phantom lines
114 show a stepped transition, as the perimeter shape is replaced
by a cross-sectional shape providing two successively less-steep
pitches before intersection with the basic volumetric shape. In
turn, phantom lines 116 show a smooth transition, as the perimeter
shape is replaced by a cross-sectional shape providing a
continuously-curved line before intersection with the basic
volumetric shape.
[0066] Turning to FIGS. 10 and 11, two approaches are depicted
relating to direct cooling of LEDs and/or other semiconductor
devices used in a dense array, according to the invention. The
array preferably comprises part of light emitting subsystem 12 of
photoreactive system 10, as previously described and shown in FIG.
1. Moreover, the photoreactive system 10 includes cooling subsystem
18, implemented to manage the thermal behavior of the light
emitting subsystem 12. Preferably, the cooling subsystem 18
provides direct cooling of the semiconductor devices, in accordance
with the disclosures shown and described in U.S. patent application
Ser. No. 11/083,525, filed Mar. 18, 2005 (Attorney Docket No.
PHO-2.009.US), previously referenced.
[0067] In FIG. 10, micro-reflector elements 200 include slots 202
disposed in the elements' respective lower portions. Coolant 204 is
provided so as to enter through respective slots 202. Preferably,
slots 202 are positioned below the focal point, which typically is
the location of the semiconductor device 19. Coolant 204 flows
through the slots (either by pressurization, convection, or
otherwise, or both) and exits from the top of the elements 200.
Coupling optics 30 preferably are employed, in part, to contain the
coolant 204.
[0068] In FIG. 11, semiconductor devices 19 are disposed in an
array of micro-reflector elements 220. Coupling optics 30 is
implemented having deflectors 222. Typically, these deflectors 222,
like the coupling optics 30, have a selected index of refraction so
as to minimize reflection of the radiant output (i.e., maximizing
transmission to the work piece 26). Here, one or more deflectors
222 are implemented having a selected shape, length and volume, and
are disposed toward each device 19 and element 220. Preferably, at
least one such deflector 222 is centered, or substantially
centered, on the respective element 220 (e.g., is aligned with the
longitudinal axis of the element, as such axis is previously
described for example embodiments). The deflector 222, so
implemented and disposed, divert a selected portion of the coolant
204 so as to flow into the respective element 220. Such diversion
will tend to cause turbulence in the coolant (e.g., swirling
around), which together with direct contact, cools the device 19.
Although turbulence is indicated here, use of turbulence generally
contemplates a balancing of its benefits (e.g., enhanced cooling
performance) against its detriments.
[0069] All patent and non-patent literature cited herein are hereby
incorporated by reference, as if recited herein in full, for all
purposes.
[0070] Persons skilled in the art will recognize that many
modifications and variations are possible in the details,
materials, and arrangements of the parts and actions which have
been described and illustrated in order to explain the nature of
this invention and that such modifications and variations do not
depart from the spirit and scope of the teachings and claims
contained therein.
* * * * *