U.S. patent application number 11/518894 was filed with the patent office on 2007-02-01 for vacuum processing apparatus and vacuum processing method.
Invention is credited to Yoshitaka Kai, Kenichi Kuwabara, Yasuhiro Nishimori, Takeshi Oono, Takeshi Shimada, Takeo Uchino.
Application Number | 20070023683 11/518894 |
Document ID | / |
Family ID | 35053280 |
Filed Date | 2007-02-01 |
United States Patent
Application |
20070023683 |
Kind Code |
A1 |
Kai; Yoshitaka ; et
al. |
February 1, 2007 |
Vacuum processing apparatus and vacuum processing method
Abstract
A vacuum processing apparatus and method includes a sample taken
out from a given cassette placed on a cassette support in
atmosphere, the sample is carried into a vacuum processing chamber
via a chamber enabling switching between atmosphere and vacuum, the
sample is subjected to etching processing in the vacuum processing
chamber, and at least one inspection process is carried out in the
vacuum either before or after etching of the sample in the vacuum
processing chamber. The at least one inspection process in the
vacuum is a defect inspection.
Inventors: |
Kai; Yoshitaka;
(Kudamatsu-shi, JP) ; Kuwabara; Kenichi;
(Hikari-shi, JP) ; Uchino; Takeo; (Kudamatsu-shi,
JP) ; Nishimori; Yasuhiro; (Kudamatsu-shi, JP)
; Oono; Takeshi; (Kudamatsu-shi, JP) ; Shimada;
Takeshi; (Hikari-shi, JP) |
Correspondence
Address: |
ANTONELLI, TERRY, STOUT & KRAUS, LLP
1300 NORTH SEVENTEENTH STREET
SUITE 1800
ARLINGTON
VA
22209-3873
US
|
Family ID: |
35053280 |
Appl. No.: |
11/518894 |
Filed: |
September 12, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10875231 |
Jun 25, 2004 |
7112805 |
|
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11518894 |
Sep 12, 2006 |
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Current U.S.
Class: |
250/441.11 |
Current CPC
Class: |
H01L 21/67207 20130101;
H01L 21/67167 20130101 |
Class at
Publication: |
250/441.11 |
International
Class: |
G01F 23/00 20060101
G01F023/00 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 30, 2004 |
JP |
2004-097773 |
Claims
1. A vacuum processing apparatus comprising: a plurality of vacuum
processing chambers for subjecting a sample to vacuum processing;
vacuum carriage means for carrying the sample into and out of the
vacuum processing chamber; a switchable chamber capable of being
switched between atmosphere and vacuum for carrying the sample into
and out of the vacuum processing chamber; cassette supporting means
for supporting a plurality of cassettes capable of housing samples;
carriage means enabling vertical movement for taking out a sample
from a given cassette on the cassette supporting means; and control
means performing carriage control for carrying the sample taken out
of the given cassette via the carriage means, the switchable
chamber and the vacuum carriage means into at least one of the
vacuum processing chambers, and for carrying the processed sample
out of at least one of the vacuum processing chambers; wherein the
plurality of vacuum processing chambers include at least one vacuum
etching chamber and at least one vacuum inspection chamber for
inspecting the sample for defects; and wherein the vacuum
inspection chamber is equipped with an inspection chamber for
inspecting a defect.
2. A vacuum processing method comprising the steps of: taking out a
sample from a given cassette placed on a cassette supporting means
in atmosphere; carrying the sample into a vacuum processing chamber
via a chamber enabling switching between atmosphere and vacuum;
subjecting the sample to etching processing in the vacuum
processing chamber; and carrying out at least one inspection
process in the vacuum either before or after etching of the sample
in the vacuum processing chamber; wherein the at least one
inspection process in the vacuum is a defect inspection.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This is a continuation application of U.S. application Ser.
No. 10/875,231, filed Jun. 25, 2004, the contents of which are
incorporated herein by reference.
[0002] The present application claims priority from Japanese patent
application No. 2004-097773 filed on Mar. 30, 2004, the content of
which is hereby incorporated by reference into this
application.
FIELD OF THE INVENTION
[0003] The present invention relates to a multi-chamber system to
be applied to a facility for manufacturing and inspecting
semiconductors, electronic components or the like, the system
capable of carrying samples such as wafers in vacuum or inert-gas
atmosphere by coupling plural process modules and inspection
modules organically, thereby integrating manufacturing and
inspecting facilities in order to realize cost reduction, high
operation efficiency and small footprint.
DESCRIPTION OF THE RELATED ART
[0004] Heretofore, a multi-chamber semiconductor manufacturing
device has been proposed having two cassette chambers, two cleaning
chambers and two CVD chambers disposed so as to surround a carrying
chamber equipped with a carrier robot (refer for example to patent
document 1). Another multi-chamber system has been proposed where
multiple carrier chambers are coupled via handling chambers and
process chambers are disposed so as to surround each carrier
chamber (refer for example to patent document 2). Another
multi-chamber system being proposed has two primary carrying
chambers, each having plural process chambers connected thereto,
being coupled to each other via a secondary carrying chamber (refer
for example to patent document 3). Further, a reduced pressure CVD
apparatus having a processing device and an inspection device
disposed within the same apparatus has been proposed (refer for
example to patent document 4).
[0005] However, there has been no proposal of a multi-chamber
system having plural process chambers and plural inspection modules
connected to a carrying chamber for forming a semiconductor
manufacturing apparatus, and of using such multi-chamber system to
carry a sample (wafer) being the object to be processed into a
process chamber, to process the same and then to carry the
processed sample into an inspection module connected to the
carrying chamber for subjecting the sample to CD inspection and
defect inspection. Conventionally in a semiconductor production
line, manufacturing apparatuses and inspection apparatuses are
introduced individually and disposed separately in a facility, and
the samples are carried either by hand or by automated carrier
robots moving back and forth between apparatuses. Sampling
inspection, according to which some samples in a lot are extracted
and carried to the inspection apparatus to be subjected to
inspection for defects caused during the exposure and development
processes, such as the adhesion of contaminants and exposure
defects of line widths, is insufficient to accurately confirm the
quality of all the wafers being processed, and the unchecked
defective wafers is subjected to processing in the etching
apparatus, causing crucial failure of the manufactured device and
deteriorating the yield ratio greatly.
[0006] Along with the recent trend in miniaturization and mass
production of <90 nm leading edge devices, the manufacturers of
semiconductor manufacturing apparatuses have been requested to
minimize the footprint and to improve the yield factor of the
apparatuses, and therefore, demands for an art for realizing these
requests are increasing.
[0007] Patent Document 1
[0008] Japanese Patent Laid-Open Application No. 2001-210691
[0009] Patent Document 2
[0010] Japanese Patent Laid-Open Application No. H5-304197
[0011] Patent Document 3
[0012] Japanese Patent Laid-Open Application No. H11-222675
[0013] Patent Document 4
[0014] Japanese Patent Laid-Open Application No. H5-259259
SUMMARY OF THE INVENTION
[0015] As explained, the conventional multi-chamber system has been
applied to processing apparatuses only, and in order to check for
defects in the samples, it was necessary to introduce and install a
separate inspection system to be used before and after the
processing of samples in the processing apparatuses. By separately
installing an inspection system and a processing system, the time
required for carrying samples from one apparatus to another is
increased, the output of processed samples is deteriorated, and the
investment costs are increased. Moreover, it is difficult to
automatically remove the defective sample within a lot, and the
defective sample being subjected to further processing causes the
defect to be magnified, and the processed sample will not function
as product. Furthermore, the conventional system cannot carry out
in-line inspection for detecting the contamination and process
defects caused during and after the processing of samples in the
process chamber, and for checking the finished status of the
critical dimension of wiring widths and groove widths after the
processing.
[0016] The present invention aims at providing a vacuum processing
apparatus and vacuum processing method capable of carrying out
vacuum processing of a sample and inspection thereof before and
after the vacuum processing in a single multi-chamber, to thereby
prevent increase of the time required for carrying samples from one
apparatus to another and prevent increase of investment costs.
Moreover, the present invention aims at providing a vacuum
processing apparatus and vacuum processing method capable of
removing the defective sample automatically and to prevent the
defective sample from being subjected to further processing leading
to production of a nonfunctioning product.
[0017] The present invention provides a vacuum processing method
and apparatus for a multi-chamber system equipped with two or more
coupling ports, a carriage chamber having in its interior a sample
carriage means, a process module coupled to the coupling port, and
an inspection/measurement module coupled to the coupling port,
wherein the sample recognized as being defective in the
inspection/measurement module either before or after the vacuum
processing in the process module is recovered in a recovery
cassette disposed separately from a normal sample cassette via a
sample supporting means disposed in atmosphere.
[0018] The present invention further provides a vacuum processing
apparatus comprising a plurality of vacuum processing chambers for
subjecting a sample to vacuum processing, a vacuum carriage means
for carrying the sample into and out of the vacuum processing
chamber, a switchable chamber capable of being switched between
atmosphere and vacuum for carrying the sample into and out of the
vacuum processing chamber, a cassette supporting means for
supporting a plurality of cassettes capable of housing samples, a
carriage means capable of moving vertically for taking out a sample
from a given cassette on the cassette supporting means, and a
control means performing carriage control for carrying the sample
taken out of the given cassette via the carriage means, the
switchable chamber and the vacuum carriage means into the vacuum
processing chamber, and for carrying the processed sample out of
the vacuum processing chamber, wherein the vacuum processing
chamber is equipped with at least one etching chamber and at least
one inspection chamber for inspecting the sample for defects.
[0019] According to the above vacuum processing apparatus of the
invention, the inspection chamber is either a defect inspection
chamber or a CD inspection chamber, and the sample determined to be
defective in the inspection chamber is recovered in atmosphere.
[0020] According further to the present invention, the inspection
performed in the inspection chamber is either total inspection or
sampling inspection.
[0021] According to the present invention, the vacuum processing
chamber is equipped with more than one etching chamber, annealing
chamber, lithography chamber or ashing chamber.
[0022] The vacuum processing apparatus of the present invention
further comprises a means for disclosing production data for
regenerating the recovered sample determined to be defective in the
inspection chamber to facilities that carry out preceding and
succeeding processes.
[0023] The present invention provides a vacuum processing method
comprising the steps of taking out a sample from a given cassette
placed on a cassette supporting means, carrying the sample into a
vacuum processing chamber via a chamber capable of being switched
between atmosphere and vacuum, and subjecting the sample to vacuum
processing, characterized in carrying out at least one inspection
process in vacuum either before or after etching the sample in the
vacuum processing chamber.
[0024] According to the above vacuum processing method of the
present invention, either defect inspection or CD measurement is
performed as the above inspection. Further, the sample determined
to be defective by the inspection is recovered in atmosphere in a
recovery cassette.
[0025] According to the vacuum processing method of the present
invention, the inspection is performed either as total inspection
or sampling inspection.
[0026] According to the vacuum processing method of the present
invention, the vacuum processing includes more than one process of
etching, annealing, lithography or ashing.
[0027] Further according to the present invention, the vacuum
processing method comprises a step for disclosing production data
for regenerating the recovered sample determined to be defective in
the inspection chamber to preceding and succeeding processes.
[0028] By combining the present multi-chamber system with process
modules for etching, annealing, lithography and ashing, and with a
defect inspection module or a CD measurement module such as defect
review unit, SEM unit or optical appearance inspection device, it
becomes possible to inspect every sample for defects inline before
and after the process, and the defective sample can be removed from
the production lot and recovered in a separate recovery cassette to
be subjected to regeneration processes such as washing. Further, by
evaluating and processing the samples via inline processing (either
in series or in parallel) in a single multi-chamber, the time
required for carrying the samples from one apparatus to another and
the investment costs for evaluation equipments which were required
in the prior art system become unnecessary, and thus, the present
invention enables to cuts down investment costs greatly and
minimize footprint.
[0029] In other words, according to the present invention, since
the inspecting and processing of samples are carried out either in
series or in parallel within the same multi-chamber, throughput is
enhanced since the conventional time required for carrying the
samples among apparatuses is cut down and the individual management
of the defective samples is made possible. Further, the defective
samples found during inspection are recovered for prompt
regeneration, and the investments for separate processing and
evaluation facilities are no longer necessary, so the costs
invested on facilities can be cut down greatly.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] FIG. 1 is an explanatory view showing the outline of the
structure of a multi-chamber vacuum processing apparatus according
to the present invention;
[0031] FIG. 2 is an explanatory view showing examples of
contamination, scratches and pattern defects on the sample surface,
and in-plane distribution data; and
[0032] FIG. 3 is a block diagram showing the overall configuration
of the semiconductor manufacturing system using the vacuum
processing apparatuses according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0033] The preferred embodiments of the vacuum processing apparatus
and the vacuum processing method according to the present invention
will now be described with reference to the drawings.
[0034] FIG. 1 is a plan view of a single wafer multi-chamber system
for processing wafers in a semiconductor manufacturing facility. A
vacuum processing apparatus 1 with single wafer multi-chambers
comprises a carrying chamber 10 equipped with a vacuum robot 2 for
handling a sample (wafer) 8 to be processed under high vacuum and
having two or more coupling ports 11a through 11d disposed to the
surrounding walls thereof, process modules 3-1, 3-2 and inspection
modules 4-1, 4-2 coupled to the coupling ports 11a through 11d via
gate valves 12a through 12d, a load lock chamber 5-1, an unload
lock chamber 5-2, an atmospheric loader 6, and a cassette
supporting means 9 capable of supporting wafer cassettes. The load
lock chamber 5-1 and the unload lock chamber 5-2 can be designed as
small capacity chambers that are only large enough to carry a
single wafer at a time. The atmospheric loader 6 is a loader
disposed under atmosphere, having a wafer mounting unit capable of
being moved both in the horizontal direction (X-Y direction of the
drawing) and vertical direction (direction perpendicular to the
sheet: z axis), and having a wafer alignment unit 61 for
positioning the sample. The transfer of a sample from the
atmospheric loader 6 to the carrying chamber 1 and the transfer of
a sample from the carrying chamber 1 to the atmospheric loader 6
are made possible via the load lock chamber 5-1 and the unload lock
chamber 5-2. The load lock chamber 5-1 and the unload lock chamber
5-2 are disposed independently in the present embodiment, but a
single mechanism (lock chamber) serving as both chambers can also
be used.
[0035] Wafer cassettes 7-1, 7-2 are product cassettes for storing
product wafers, a dummy wafer cassette 7-3 is a cassette for
storing dummy wafers, and a recovery cassette 7-4 is a cassette for
recovering samples (wafers) with defects detected in an inspection
module 4. The dummy wafer cassette 7-3 is also capable of storing
product wafers.
[0036] The atmospheric loader 6 is communicated with the load lock
chamber 5-1 and the unload lock chamber 5-2, and the load lock
chamber 5-1 and unload lock chamber 5-2 are communicated with the
carrying chamber 1. A sample 8 is transferred via the atmospheric
loader 6 and the vacuum carrier robot 2, and delivered to an
etching module 3 or an inspection module 4 connected to the
coupling port.
[0037] In the inspection module 4, the sample (wafer) is subjected
to visual inspection, and when an inspection data equal to or
greater than the numeric value prescribed by a recipe of the
present system in advance is detected, the sample is carried via
the vacuum carrier robot 2, the unload lock chamber 5-2 or the load
lock chamber 5-1 and the atmospheric loader to be recovered in the
recovery cassette, so as to prevent unnecessary etching from being
performed at the etching module 3.
[0038] Appearance inspection for inspecting contamination, defects
and CD on the sample surface is carried out in the inspection
module 4, and analysis of the image, defects and components is
performed via a control apparatus such as a personal computer or a
microcomputer not shown connected to the inspection module 4. The
result of the analysis is created as in-plane distribution data
showing distribution, number and specifics of the contaminants or
defects on the sample surface, and displayed on the screen of the
personal computer or the like.
[0039] FIG. 2 shows an example of the inspection data. FIG. 2 shows
enlarged views of examples of contaminants 82 (FIGS. 2 (a) and
(b)), blemish 83 (FIG. 2 (c)) and pattern defects 84 (FIGS. 2 (d)
and (e)) detected on a wiring pattern 81 on the surface of a wafer
8. The data of defects etc. detected through the present inspection
are created as in-plane distribution data (FIG. 2(f)) in a personal
computer or the like.
[0040] FIG. 3 is used to describe the outline of a sample
management system of a semiconductor manufacturing device formed by
combining a plurality of vacuum processing apparatuses 1 with
multi-chambers according to the present invention. Plural vacuum
processing apparatuses 1-1 through 1-n are connected via a network
91 to a management unit 92 such as a personal computer, thereby
forming a semiconductor manufacturing device. The analysis data and
the in-plane data of each sample acquired by the vacuum processing
apparatuses 1-1 through 1-n are stored per sample (per wafer) in
the management unit 92 via the network 91. The process inspection
data of the samples are transmitted by data communication via a
sample data management system for online product lines, such as
SECS, GEM and GEM300. The management unit 92 functions as means for
disclosing to the preceding and succeeding facilities the product
information related to the regeneration process of a sample
determined as being defective in an inspection chamber and
recovered therefrom. By carrying out an in-line processing (series
processing or parallel processing) for the processing and
evaluating of samples in the same multi-chamber, it becomes
possible to cut down investment costs and footprints of facilities,
since the inter-apparatus transfer time required according to the
prior art system can be reduced, and the investments required for
individual processing and inspecting devices required for
individual management and recovery of defective samples for rapid
regeneration are no longer necessary.
[0041] Now, we will describe an example of how the sample is
processed and managed using the semiconductor manufacturing device
explained above. A first example relates to a case where the
processes performed in process modules 3-1 and 3-2 are etching
processes, the process performed in the inspection module 4-1 is
either a CD (line width)/initial mask shape evaluation or a CD
(line width)/post-etching shape evaluation, and the process
performed in the inspection module 4-2 is defect inspection. First
of all, the wafer 8 taken out of wafer cassette 7-1 or 7-2 by the
atmospheric loader 6 is transferred via the load lock chamber 5-1
into the carrying chamber 1, and carried into the inspection module
4-1 by the vacuum robot 2. In the inspection module 4-1, either a
line width measurement or a pre-etch initial mask shape analysis is
carried out prior to the etching process, and the inspection data
is stored in the management unit 92. Next, the sample 8 is
transferred to the process module 3-1 or 3-2, where it is subjected
to an etching process. Thereafter, the processed sample 8 is
transferred to the inspection module 4-2, where it is subjected to
inspection for etching defect caused by initial defects or
contamination during etching, and then to inspection module 4-1,
where it is subjected to CD/shape evaluation (CD-SEM (tilt type),
review SEM). This sequence of processes allows the system to
confirm the amount of defects, the amount of increase/decrease of
the line width and the bird's-eye shape or side wall shape of the
etching process, and to recover the wafers having defects into the
recovery cassette 7-4 and to store the normal wafers in their
original positions in the wafer cassette 7-1 or 7-2. Thus, it
becomes possible to cut down processing time, to manage quality and
to recover defective wafers for regeneration.
[0042] A second example relates to a case where the processes
performed in process modules 3-1 and 3-2 are etching processes, the
process performed in the inspection module 4-1 is defect
inspection, and the process performed in the inspection module 4-2
is post-etching CD (line width)/shape evaluation. First of all, the
wafer 8 taken out of wafer cassette 7-1 or 7-2 by the atmospheric
loader 6 is transferred via the load lock chamber 5-1 into the
carrying chamber 1, and then sent to the process module 3-1 or 3-2
by the vacuum robot 2, where it is subjected to etching process.
Thereafter, the processed sample 8 is transferred to the inspection
module 4-1, where it is subjected to inspection for etching defects
caused by initial defects or contamination during etching. Then,
the sample 8 is transferred to the inspection chamber 4-2 where it
is subjected to post-etching CD/shape evaluation. This sequence of
processes performing inspection after the etching process for
inspecting etching defects caused for example by defective exposure
or by scratches allows the system to easily determine and retrieve
the defective samples, and to confirm the finished line width after
etching and the bird's-eye shape or side wall shape of the etched
film, based on which data the system recovers the defective samples
into the recovery cassette 7-4 and stores the normal samples in
their original positions in the wafer cassette 7-1 or 7-2. Thus, it
becomes possible to cut down processing time, to manage quality and
to recover defective wafers for regeneration.
[0043] A third example relates to a case where the processes
performed in process modules 3-1 and 3-2 are etching processes, the
process performed in the inspection module 4-1 is defect
inspection, and the process performed in the inspection module 4-2
is post-etching CD (line width)/shape evaluation. First of all, the
wafer 8 taken out of wafer cassette 7-1 or 7-2 by the atmospheric
loader 6 is transferred via the load lock chamber 5-1 into the
carrying chamber 1, and then sent to the inspection module 4-1 by
the vacuum robot 2. In the inspection module 4-1, the wafer is
subjected to defect inspection prior to etching for checking
scratches etc. on the sample, thereby detecting defective samples
that may affect the etching process, and enabling recovery of the
defective wafers. The sample with no defect found during defect
inspection is transferred to the process module 3-1 or 3-2, where
it is subjected to etching. Thereafter, the processed sample 8 is
transferred to the inspection module 4-2, where it is subjected to
inspection for etching defects caused by initial defects and by
contamination during etching, and to CD/shape evaluation (CD-SEM
(tilt type), review SEM). This sequence of processes allows the
system to confirm the amount of defects, the amount of
increase/decrease of the line width and the bird's-eye shape or
side wall shape of the etched film showing the performance of the
etching process, based on which the system recovers the defective
samples into the recovery cassette 7-4 and stores the normal
samples in their original positions in the wafer cassette 7-1 or
7-2. Thus, it becomes possible to cut down processing time, to
manage quality and to recover defective wafers for
regeneration.
[0044] In the above embodiments, the process modules connected to
the coupling ports 11a through 11e are a combination of ECR etching
process modules supplied of plasma generating gas for etching the
sample (wafer) by the generated gas plasma, and inspection modules
for checking the surface of samples for contaminants, defects or
the line width through images using high voltage electron beams.
Examples of adoptable process modules include inductively-coupled
plasma etching apparatus, helicon plasma etching apparatus,
dual-frequency-excited parallel plate plasma etching apparatus,
microwave plasma etching apparatus, plasma CVD apparatus, reduced
pressure CVD apparatus, parallel plate CVD apparatus, coaxial
cylinder plasma CVD apparatus, ECR plasma CVD apparatus, and
various sputtering apparatuses. The inspection module can be
equipped with devices such as SEM surface inspection device,
optical surface inspection device and CD-SEM.
* * * * *