U.S. patent application number 11/508152 was filed with the patent office on 2006-12-21 for semiconductor device and method for fabricating the same.
This patent application is currently assigned to FUJITSU LIMITED. Invention is credited to Kenji Imanishi, Hisao Shigematsu, Hitoshi Tanaka.
Application Number | 20060284213 11/508152 |
Document ID | / |
Family ID | 14737372 |
Filed Date | 2006-12-21 |
United States Patent
Application |
20060284213 |
Kind Code |
A1 |
Shigematsu; Hisao ; et
al. |
December 21, 2006 |
Semiconductor device and method for fabricating the same
Abstract
The semiconductor device comprises a collector layer 14; a base
layer 16 of a carbon-doped Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y
layer having one surface connected to the collector layer 14; an
emitter layer 18 connected the other surface of the base layer 16;
a base contact layer 30 of a carbon-doped GaAsSb layer electrically
connected to the base layer 16; and a base electrode 32 formed on
the base contact layer 30. The semiconductor device of such
structure can have a much reduced base resistance R.sub.B, whereby
InP/GaInAsSb-based HBTs including InP/InGaAs-based HBTs can have
higher maximum oscillation frequency f.sub.max. Because of the
carbon-doped semiconductor layer the semiconductor device can have
higher reliability.
Inventors: |
Shigematsu; Hisao;
(Kawasaki, JP) ; Imanishi; Kenji; (Kawasaki,
JP) ; Tanaka; Hitoshi; (Kawasaki, JP) |
Correspondence
Address: |
WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP
1250 CONNECTICUT AVENUE, NW
SUITE 700
WASHINGTON
DC
20036
US
|
Assignee: |
FUJITSU LIMITED
Kawasaki
JP
|
Family ID: |
14737372 |
Appl. No.: |
11/508152 |
Filed: |
August 23, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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10092526 |
Mar 8, 2002 |
|
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11508152 |
Aug 23, 2006 |
|
|
|
09191543 |
Nov 13, 1998 |
6399971 |
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10092526 |
Mar 8, 2002 |
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Current U.S.
Class: |
257/197 ;
257/E21.387; 257/E29.044; 257/E29.09; 257/E29.091; 257/E29.093;
257/E29.124; 257/E29.189 |
Current CPC
Class: |
H01L 29/7371 20130101;
H01L 29/66318 20130101; H01L 29/42304 20130101; H01L 29/207
20130101; H01L 31/03046 20130101; H01L 29/205 20130101; H01L 29/201
20130101; H01L 29/1004 20130101 |
Class at
Publication: |
257/197 |
International
Class: |
H01L 31/00 20060101
H01L031/00; H01L 29/739 20060101 H01L029/739 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 28, 1998 |
JP |
10-118466 |
Claims
1. A semiconductor device comprising: a collector layer; a base
layer of a carbon-doped Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer
having one surface connected to the collector layer; an emitter
layer connected to the other surface of the base layer; a base
contact layer of a carbon-doped GaInAsSb layer electrically
connected to the base layer; and a base electrode formed on the
base contact layer.
2. A semiconductor device according to claim 1, wherein the base
contact layer is lattice-matched with the base layer.
3. A semiconductor device according to claim 1, wherein the base
contact layer is formed on said one surface or said the other
surface of the base layer.
4. A semiconductor device according to claim 1, wherein the base
contact layer is formed on a surface of the collector layer
connected to the base layer and has a side surface connected to a
side surface of the base layer.
5. A semiconductor device according to claim 1, further comprising
the base contact layer is formed on a surface of the emitter layer
connected to the base layer and has a side surface connected to a
side surface of the base layer.
6. A semiconductor device according to claim 1, further comprising
a surface passivation layer for protecting the base contact layer
formed on the surface of the base contact layer with the base
electrode formed on.
7. A semiconductor device according to claim 1, wherein an As
composition y of the Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer is
1, so that the base layer is formed of a InGaAs layer.
8. A semiconductor device according to claim 1, wherein a Ga
composition x of the Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer is
1, so that the base layer is formed of a GaAsSb layer.
9. A semiconductor device according to claim 1, wherein a dopant
concentration of the base contact layer is not less than
1.times.10.sup.20 cm.sup.-3.
Description
[0001] This application is a divisional of application Ser. No.
10/092,526, filed Mar. 8, 2002, which is a divisional of
application Ser. No. 09/191,543, filed Nov. 13, 1998, U.S. Pat. No.
6,399,971.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a semiconductor device of a
hetero-junction bipolar transistor structure, and a method for
fabricating the same.
[0003] Recently optical communications systems and mobile
communication systems which have high efficiency are required. To
make these systems highly efficient semiconductor devices are
essential. Hetero-junction bipolar transistors (hereinafter called
"HBTs"), which are known as high-speed devices, are one of such
devices whose efficiency improvement is prospective.
[0004] A structure of a conventional HBT will be explained with
reference to FIG. 11.
[0005] A collector contact layer 102 formed of an n.sup.+-InGaAs
layer is formed on a semi-insulating InP substrate 100. A collector
layer 104 of an i-InGaAs layer is formed on the collector contact
layer 102. A base layer 106 of a p.sup.+-InGaAs layer is formed on
the collector layer 104. An emitter layer 108 of an n-InP layer is
formed on the base layer 106. An emitter contact layer 110 of an
n.sup.+-InGaAs layer is formed on the emitter layer 108. An emitter
electrode 112 of WSi film is formed on the emitter contact layer
110. The emitter contact layer 110 and the emitter layer 108 are
processed in a mesa-shape, and a base electrode 116 is formed on an
exposed part of the base layer 106. The base layer 106 and the
collector layer 104 are processed in a mesa-shape, and a collector
electrode 118 is formed on an exposed part of the collector contact
layer 102. Thus, an InP/InGaAs-based HBT is formed.
[0006] To make the HBT-ICs more speedy, a higher maximum
oscillation frequency f.sub.max is necessary. A maximum oscillation
frequency f.sub.max is expressed by f.sub.max=
(f.sub.T/(8.pi..times.R.sub.B.times.C.sub.BC)) wherein a maximum
cut-off frequency is represented by f.sub.T, a base resistance is
represented by R.sub.B, and a base-collector capacitance is
represented by C.sub.BC. A maximum oscillation frequency f.sub.max
is proportional to a reciprocal of a square root of a base
resistance R.sub.B ( (1/(R.sub.B))), and for a higher maximum
oscillation frequency f.sub.max, it is necessary to obtain a lower
base resistance R.sub.B.
[0007] In GaAs-based HBTS, recently carbon (C) is dominantly used
as a dopant for the bases from the viewpoint of ensured
reliability, etc., and doping techniques for higher concentrations
of above 1.times.10.sup.20 cm.sup.-3 have been developed.
[0008] On the other hands, in InP/InGaAs-based HBTS, actually
doping techniques using carbon as a dopant for the base have not
been sufficiently established. The base layer cannot be heavily
doped with carbon, and this will be because carbon is not
dissociated from hydrogen in forming InGaAs layer to be the base
layer to be taken in the films in the form of CH, and the carbon
does not function as an acceptor (hydrogen passivation). This
phenomenon is conspicuous especially in MOCVD method using hydrogen
as a carrier gas and a hydrogen content gas as a source gas.
[0009] As a result, InP/InGaAs-based HBTs have very high maximum
cut-off frequencies f.sub.T but cannot have sufficiently maximum
oscillation frequencies f.sub.max.
SUMMARY OF THE INVENTION
[0010] An object of the present invention is to provide a structure
of a semiconductor device which enables an InP/InGaAs-based HBT to
have a lower base resistance, and a method for fabricating the
same.
[0011] The above-described object can be achieved by a
semiconductor device comprising: a collector layer; a base layer of
a carbon-doped Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer having
one surface connected to the collector layer; an emitter layer
connected the other surface of the base layer; a base contact layer
of a carbon-doped GaAsSb layer electrically connected to the base
layer; and a base electrode formed on the base contact layer. The
semiconductor device of such structure can have a much reduced base
resistance R.sub.B, whereby InP/GaInAsSb-based HBTs including
InP/InGaAs-based HBTs can have higher maximum oscillation frequency
f.sub.max. Because of the carbon-doped semiconductor layer the
semiconductor device can have higher reliability.
[0012] In the above-described semiconductor device, it is
preferable that the base contact layer is formed on said one
surface or said the other surface of the base layer.
[0013] In the above-described semiconductor device, it is possible
that the base contact layer is formed on a surface of the collector
layer connected to the base layer and has a side surface connected
to a side surface of the base layer.
[0014] In the above-described semiconductor device, it is possible
that the base contact layer is formed on a surface of the emitter
layer connected to the base layer and has a side surface connected
to a side surface of the base layer.
[0015] In the above-described semiconductor device, it is possible
that the device further comprises a surface passivation layer for
protecting the base contact layer formed on the surface of the base
contact layer with the base electrode formed on. Because of the
surface passivation layer covering the surface of the base contact
layer, surface recombination on the base contact layer can be
restrained, whereby dependence of current gains on sizes can be
restrained, and the semiconductor device can have higher
reliability.
[0016] In the above-described semiconductor device, it is possible
that the base contact layer is formed of a carbon-doped GaInAsSb
layer in place of said carbon-doped GaAsSb layer.
[0017] In the above-described semiconductor device, it is possible
that an As composition y of the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y is 1, so that the base layer
is formed of a InGaAs layer.
[0018] In the above-described semiconductor device, it is
preferable that an In composition x of the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y is 0, so that the base layer
is formed of a GaAsSb layer.
[0019] In the above-described semiconductor device, it is
preferable that a dopant concentration of the base contact layer is
not less than 1.times.10.sup.20 cm.sup.-3.
[0020] The above-described object can be also achieved by a method
for fabricating a semiconductor device comprising the steps of:
forming a first semiconductor layer on a semiconductor substrate;
forming a base layer of a carbon-doped
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer on the first
semiconductor layer; forming a second semiconductor layer on the
base layer; patterning the second semiconductor layer in a
mesa-shape; forming a base contact layer on the base layer exposed
by patterning the second semiconductor layer; and forming a base
electrode on the base contact layer. By fabricating the
above-described semiconductor device fabricating method, the
semiconductor device can have a much reduced base resistance
R.sub.B, whereby InP/GaInAsSb-based HBTs including InP/InGaAs-based
HBTs can have higher maximum oscillation frequency f.sub.max.
Because of the carbon-doped semiconductor layer the semiconductor
device can have higher reliability.
[0021] In the above-described method for fabricating a
semiconductor device, it is preferable that the method further
comprises, after the step of patterning the second semiconductor
layer, a step of removing the base contact layer in a exposed
region which is exposed by patterning the second semiconductor
layer, wherein in the step of forming the base contact layer, the
base contact layer having a side surface connected to the base
layer is formed on the first semiconductor layer exposed by
removing the base layer.
[0022] In the above-described method for fabricating a
semiconductor device, it is preferable that in the step of forming
the base layer, the base layer of an InGaAs layer which corresponds
to the Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer whose As
composition y is 1, or a GaAsSb layer which corresponds to the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer whose In composition X
is 0 is formed.
[0023] In the above-described method for fabricating a
semiconductor device, it is preferable that in the step of forming
the base contact layer, the base contact layer is formed of a
material which lattice-matches with a material forming the base
layer. The base contact layer is formed of a material which
lattice-matches with a material forming the base layer, whereby
characteristic deterioration of the semiconductor device due to
lattice deformation can be prevented.
[0024] In the above-described method for fabricating a
semiconductor device, it is preferable that in the step of forming
the base contact layer, the base contact layer is formed of a
carbon-doped GaAsSb layer or a carbon-doped GaInAsSb layer. The
base contact layer is formed of such carbon-doped materials,
whereby the base contact layer can effectively have a low
resistance, and the semiconductor device can have higher
reliability.
[0025] In the above-described method for fabricating a
semiconductor device, it is preferable that the method further
comprises, before the step of forming the base contact layer, a
step of thermal-treating for eliminating hydrogen in the base
layer. Hydrogen in the base layer is eliminated, whereby carbon
bonded with the hydrogen is electrically activated, whereby the
base layer can have a further lower resistance.
[0026] In the above-described method for fabricating a
semiconductor device, it is preferable that the method further
comprises, after the step of patterning the second semiconductor
layer, a step of forming a sidewall insulation film on a side wall
of a mesa of the second semiconductor layer.
[0027] In the above-described method for fabricating a
semiconductor device, it is preferable that the method further
comprises, after the step of forming the base contact layer, a step
of forming a surface passivation layer on the base contact layer
for protecting the base contact layer. Because of the surface
passivation layer covering the surface of the base contact layer,
surface recombination on the base contact layer can be restrained,
whereby dependence of current gains on sizes can be restrained, and
the semiconductor device can have higher reliability.
[0028] In the above-described method for fabricating a
semiconductor device, it is preferable that the first semiconductor
layer or the second semiconductor layer is an emitter layer of an
InP layer.
[0029] The structure of the semiconductor device according to the
present invention is applicable to not only a semiconductor device
including a collector layer, a base layer and an emitter layer
sequentially deposited on a semiconductor substrate, but also a
semiconductor device of the so-called collector-up structure
including an emitter layer, a base layer and a collector layer
sequentially deposited on a semiconductor substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] FIG. 1 is a diagrammatic sectional view of the semiconductor
device according to a first embodiment of the present
invention.
[0031] FIGS. 2A-2C and 3A-3C are sectional views of the
semiconductor device according to the first embodiment in the steps
of the method for fabricating the same, which explain the
method.
[0032] FIG. 4 is a diagrammatic sectional view of the semiconductor
device according to a second embodiment of the present
invention.
[0033] FIGS. 5A-5B and 6A-6B are sectional views of the
semiconductor device according to the second embodiment in the
steps of the method for fabricating the same, which explain the
method.
[0034] FIG. 7 is a diagrammatic sectional view of the semiconductor
device according to a third embodiment of the present
invention.
[0035] FIGS. 8A-8B and 9A-9B are sectional views of the
semiconductor device according to the third embodiment in the steps
of the method for fabricating the same, which explain the
method.
[0036] FIG. 10 is a diagrammatic sectional view of the
semiconductor device according to one modification of the first
embodiment of the present invention.
[0037] FIG. 11 is a diagrammatic sectional view of the conventional
semiconductor device, which shows a structure thereof.
DETAILED DESCRIPTION OF THE INVENTION
A First Embodiment
[0038] A semiconductor device and the method for fabricating the
same according to a first embodiment of the present invention will
be explained with reference to FIGS. 1, 2A-2C and 3A-3C.
[0039] FIG. 1 is a diagrammatic sectional view of the semiconductor
device according to the present embodiment, which shows a structure
thereof, and FIGS. 2A-2C and 3A-3C are sectional views of the
semiconductor device according to the present embodiment in the
steps of the method for fabricating the semiconductor device
according to the present embodiment.
[0040] First, the structure of the semiconductor device according
to the present embodiment will be explained with reference to FIG.
1.
[0041] A collector contact layer 12 of an n.sup.+-InGaAs layer is
formed on a semi-insulating InP substrate 10. A collector layer 14
of an i-InGaAs layer is formed on the collector contact layer 12. A
base layer 16 of a p.sup.+-InGaAs layer is formed on the collector
layer 14. An emitter layer 18 of an n-InP layer is formed on the
base layer 16. An emitter contact layer 20 of an n.sup.+-InP layer
and an emitter contact layer 22 of an n.sup.+-InGaAs layer are
formed on the emitter layer 18. An emitter electrode 26 of WSi
(tungsten silicide) film is formed on the emitter contact layer 22.
The emitter contact layers 20, 22 and the emitter layer 18 are
processed in a mesa-shape, and a sidewall insulation film 28 of SiN
film is formed on the side wall of the emitter mesa. A base contact
layer 30 of a p.sup.++-GaAsSb layer is formed on the base layer 16,
which is exposed. A base electrode 32 is formed on the base contact
layer 30. The base contact layer 30, the base layer 16 and the
collector layer 14 are processed in a mesa-shape. A collector
electrode 36 is formed on the contact layer 12, which is exposed.
Thus, an InP/InGaAs-based HBT is formed.
[0042] The semiconductor device according to the present embodiment
is characterized in that the base contact layer 30 of a
p.sup.++-GaAsSb layer is formed on the base layer 16.
[0043] A base resistance R.sub.B, which influences a maximum
oscillation frequency f.sub.max, is determined by a sheet
resistance of the base layer and a contact resistance between the
base layer and the base electrode.
[0044] In the conventional semiconductor device shown in FIG. 11,
the base layer 106 is formed of the carbon-doped InGaAs, but in
this case unless the base layer 106 has a resistance sufficiently
reduced, resultantly a base resistance R.sub.B is much increased,
which leads to a lower maximum oscillation frequency f.sub.max.
[0045] However, in the semiconductor device according to the
present embodiment shown in FIG. 1, because of the base contact
layer 30 of a p.sup.++-GaAsSb layer formed on the base layer 16,
even if the base layer 16 does not have a sufficiently low
resistance, the base contact layer 30 can much reduce a resistance
between an intrinsic base region (the region of the base layer 16
immediately below the emitter layer 18) and the base electrode 32.
Accordingly, a much reduced base resistance R.sub.B can be
obtained, and a higher maximum oscillation frequency f.sub.max can
be obtained.
[0046] Because of the base electrode 32 formed on the base contact
layer 30 of a p.sup.++-GaAsSb layer of a low resistance, a contact
resistance between the base electrode 32 and the base layer 16 can
be lowered.
[0047] Then, the method for fabricating the semiconductor device
according to the present embodiment will be explained with
reference to FIGS. 2A-2C and 3A-3C.
[0048] The collector contact layer 12 of an n.sup.+-InGaAs layer
(film thickness: 350 nm; electron concentration: 1.times.10.sup.19
cm.sup.-3), the collector layer 14 of an i-InGaAs layer (film
thickness: 300 nm), the base layer 16 of a p.sup.+-InGaAs layer
(film thickness: 30 nm; hole concentration: 1.times.10.sup.19
cm.sup.-3), the emitter layer 18 of an n-InP layer (film thickness:
50 nm; electron concentration 3.times.10.sup.17 cm.sup.-3), the
emitter contact layer 20 of an n.sup.+-InP layer (film thickness:
25 nm; electron concentration 5.times.10.sup.18 cm.sup.-3) and the
emitter contact layer 22 of an n.sup.+-InGaAs layer (film
thickness: 50 nm; electron concentration; 1.times.10.sup.19
cm.sup.-3) are sequentially deposited on a semi-insulating InP
substrate 10 by, e.g., MOCVD method. Then, the WSi layer 24 is
deposited on the emitter contact layer 22 by, e.g., sputtering
method (FIG. 2A).
[0049] Then, the WSi film 24 is patterned by, e.g., dry etching to
form the emitter electrode 26 of the WSi film 24.
[0050] Subsequently, the emitter contact layer 22 of the
n.sup.+-InGaAs layer is selectively etched with the emitter
electrode 26 as a mask and by the use of an etchant of,
H.sub.3PO.sub.4:H.sub.2O.sub.2:H.sub.2O solution.
[0051] Then, also with the emitter electrode 26 as a mask, the
emitter contact layer 20 and the emitter layer 18 are selectively
etched by the use of an etchant of, e.g., HCl:H.sub.3PO.sub.4
solution.
[0052] Thus, an emitter mesa of the emitter layer 18, the emitter
contact layer 20, the emitter contact layer 22 and the emitter
electrode 26 is formed (FIG. 2B).
[0053] Next, SiN film is deposited on the entire surface by, e.g.,
CVD method and anisotropically etched to leave the SiN film on only
the side wall of the emitter mesa. Thus, the sidewall insulation
film 28 of the SiN film is formed on the side wall of the emitter
mesa (FIG. 2C).
[0054] Subsequently, the substrate with the emitter mesa thus
formed is annealed. This annealing is for eliminating hydrogen
introduced into the base layer 16 during the film depositing step,
and can prevent hydrogen passivation. The annealing at above about
300.degree. C. can eliminate hydrogen in the film.
[0055] In the method for fabricating the semiconductor device
according to the present embodiment, the InGaAs layer of the base
layer 16 is annealed in its exposed state, whereby hydrogen can be
removed more effectively than in a case that the emitter layer 18,
etc. are formed on the base layer 16.
[0056] Next, the base contact layer 30 of an 125 nm-thick
p.sup.++-GaAsSb layer heavily doped with carbon is selectively
grown by, e.g., MOCVD method on the base layer 16 exposed around
the emitter mesa.
[0057] GaAsSb can be doped heavily with an about 5.times.10.sup.20
cm.sup.-3 concentration carbon, and the base contact layer 30 to be
connected to the base layer 16 is formed of the heavily doped
p.sup.++-GaAsSb layer, whereby the base region can have a much
lower sheet resistance R.sub.B and contact resistance.
[0058] Preferably the base contact layer 30 is formed of one
selected from materials which contain no In and lattice-match with
the material of the base layer 16. It is empirically known that
In-content groups are apt to have hydrogen passivation. Lattice
mismatch introduces lattice deformation which leads to
characteristic deterioration.
[0059] In a case that a material of the base contact layer 30 is
GaAsSb, a composition of GaAs.sub.1-xSb.sub.x has an antimony
composition ratio x of 0.1.ltoreq.x.ltoreq.0.9, whereby the base
contact layer 30 can be lattice-matched with the base layer 16 of
an InGaAs layer without lattice deformation. When the composition
of GaAs.sub.1-xSb.sub.x has an antimony composition ratio x of
about 0.5, the lattice constant of GaAsSb is substantially the same
as the lattice constant of InGaAs.
[0060] To make the base resistance R.sub.B reduction sufficiently
effective, it is preferable that the base contact layer 30 is doped
with, e.g., a high concentration of about 1.times.10.sup.20
cm.sup.-3. Preferably a dopant concentration in the base contact
layer 30 is suitably adjusted in accordance with a film thickness
or others of the base contact layer 30.
[0061] Next, the base electrode 32 of, e.g., a Pt/Ti/Pt/Au
structure is formed on the base contact layer 30 by, e.g., lift-off
method (FIG. 3A).
[0062] Subsequently, a resist mask 34 formed covering the emitter
mesa and extended over the base electrode 32 is formed, and then
the base contact layer 30, the base layer 16 and the collector
layer 14 are sequentially etched with the resist mask 34 and the
base electrode 32 as a mask.
[0063] Thus, the base mesa of the collector layer 14, the base
layer 16 and the base contact layer 30 is formed (FIG. 3B).
[0064] Then, the collector electrode 35 of, e.g., a Ti/Pt/Au
structure is formed on the exposed collector contact layer 12 by,
e.g., lift-off method (FIG. 3C).
[0065] Thus, an HBT including the base layer 16 of a carbon-doped
p.sup.+-InGaAs layer and the base contact layer 30 of a
p.sup.++-GaAsSb layer having a low resistance can be formed.
[0066] As described above, according to the present embodiment, the
base contact layer 30 of a heavily carbon-doped p.sup.++-GaAsSb
layer having a low resistance is formed on the base layer 16,
whereby a much reduced base resistance R.sub.B can be obtained.
Thus, an InP/InGaAs-base HBT can have an increased maximum
oscillation frequency f.sub.max.
A Second Embodiment
[0067] The semiconductor device and a method for fabricating the
same according to a second embodiment of the present invention will
be explained with reference to FIGS. 4, 5A-5B and 6A-6C. The same
members of the second embodiment as those of the semiconductor
device and the method for fabricating the same according to the
first embodiment are represented by the same reference numbers not
to repeat or to simplify their explanation.
[0068] FIG. 4 is a diagrammatic sectional view of the semiconductor
device according to the present embodiment, which shows a structure
thereof. FIGS. 5A-5B and 6A-6B are sectional views of the
semiconductor device in the steps of the method for fabricating the
semiconductor device, which show the method.
[0069] In the present embodiment another semiconductor device
having a decreased base resistance R.sub.B and the method for
fabricating the same will be explained.
[0070] First, the structure of the semiconductor device according
to the present embodiment will be explained with reference to FIG.
4.
[0071] In the semiconductor device and the method for fabricating
the same according to the first embodiment, the base contact layer
30 of the p.sup.++-GaAsSb layer is formed on the base layer 16 but
may be connected to the base layer 16 at the sides thereof.
[0072] That is, as shown in FIG. 4, it is possible that the emitter
mesa is formed of the emitter contact layers 22, 20, the emitter
layer 18 and the base layer 16, and the base contact layer 30
formed on the collector layer 14 is connected to the base layer 16
at the side surface thereof. The semiconductor device having such
structure can have a lower base resistance R.sub.B.
[0073] Next, the method for fabricating the semiconductor device
according to the present embodiment will be explained with
reference to FIGS. 5A-5B and 6A-6B.
[0074] In the same way as in the method for fabricating the
semiconductor device according to the first embodiment shown in
FIGS. 2A to 2C, the emitter mesa of the emitter contact layers 22,
20 and the emitter layer 18, and the sidewall insulation film 28 on
the side wall of the emitter mesa is formed (FIG. 5A).
[0075] Then, by the use of an etchant of, e.g.,
H.sub.3PO.sub.4:H.sub.2O.sub.2:H.sub.2O solution, the base layer 16
of a p.sup.+-InGaAs layer is selectively etched (FIG. 5B).
[0076] Subsequently, the substrate with the emitter mesa thus
formed is annealed. This annealing is for eliminating hydrogen
introduced into the base layer 16 during the film depositing step,
and can prevent hydrogen passivation.
[0077] Then, the base contact layer 30 of an about 155 nm-thick
p.sup.++-GaAsSb layer heavily doped with carbon is selectively
grown by, e.g., MOCVD method on the collector layer 14 exposed
around the emitter mesa (FIG. 6A).
[0078] Next, in the same was as in the method for fabricating the
semiconductor device according to the first embodiment shown in
FIGS. 3A to 3C, an HBT including the base layer 16 of a
carbon-doped p.sup.+-InGaAs layer, and the base contact layer 30 of
p.sup.++-GaAsSb layer having a low resistance (FIG. 6B).
[0079] As described above, according to the present embodiment, the
base contact layer 30 of a p.sup.++-GaAsSb layer is formed
connected to the base layer 16 at the side thereof, whereby a very
low base resistance R.sub.B can be obtained.
A Third Embodiment
[0080] A semiconductor device and a method for fabricating the same
according to a third embodiment of the present invention will be
explained with reference to FIGS. 7, 8A-8B and 9A-9B.
[0081] FIG. 7 is a diagrammatic sectional view of the semiconductor
device according to the present embodiment, which shows a structure
thereof. FIGS. 8A-8B and 9A-9B are sectional views of the
semiconductor device according to the present embodiment in the
steps of the method for fabricating the same, which show the
method.
[0082] First, the structure of the semiconductor device according
to the present embodiment will be explained with reference to FIG.
7.
[0083] The basic structure of the semiconductor device according to
the present embodiment is the same as that of the semiconductor
device according to the first embodiment shown in FIG. 1 but is
characterized in that a surface passivation layer 38 of InP layer
is formed on the base contact layer 30.
[0084] The surface passivation layer 38 of InP layer is formed on
the base contact layer 30 of the p.sup.++-GaAsSb layer, whereby
surface recombination of the p.sup.++-GaAsSb layer forming the base
contact layer 30 can be restrained, whereby size dependence of
current gain can be restrained, and higher reliability can be
obtained.
[0085] In a case that the surface passivation layer 38 is provided,
the base electrode 32 is based on an alloy, e.g., Pd/Zn/Pt/Au or
others.
[0086] Then, the method for fabricating the semiconductor device
according to the present embodiment will be explained with
reference to FIGS. 8A-8B and 9A-9B.
[0087] In the same way as in the method for fabricating the
semiconductor device according to, e.g., the first embodiment shown
in FIGS. 2A to 2C, the emitter mesa of the emitter contact layers
22, 20 and the emitter layer 18 is formed, and the sidewall
insulation film 28 is formed on the side wall of the emitter mesa
(FIG. 8A).
[0088] Next, the substrate with the emitter mesa thus formed on is
annealed. This annealing is for eliminating hydrogen which may be
introduced into the base layer 16 during the film forming steps and
can prevent hydrogen passivation.
[0089] Subsequently, the base contact layer 30 of an about 125
nm-thick p.sup.++-GaAsSb layer heavily doped with carbon is grown
selectively on the base layer 16 exposed around the emitter mesa
by, e.g., MOCVD method.
[0090] Then, the surface passivation layer 38 of an about 30
nm-thick InP layer is formed on the base contact layer 30 by, e.g.,
MOCVD method (FIG. 8B).
[0091] Next, an electrode material of, e.g., Pd/Zn/Pt/Au structure
is deposited on the surface passivation layer 38 by, e.g., lift-off
method and alloyed to form the base electrode 32 (FIG. 9A)).
[0092] Then, in the same way as in the method for fabricating the
semiconductor device according to, e.g., the first embodiment shown
in FIGS. 3B and 3C, an HBT including the base layer 16 of a
carbon-doped p.sup.+-InGaAs layer, and the base contact layer 30 of
a p.sup.++-GaAsSb layer of a low resistance is fabricated (FIG.
9B).
[0093] As described above, according to the present embodiment,
because of the surface passivation layer 38 covering the surface of
the base contact layer 30 of the p.sup.++-GaAsSb layer, surface
recombination on the p.sup.++-GaAsSb layer forming the base contact
layer 30 can be restrained. Thus, size dependence of current gains
can be restrained, and higher reliability can be obtained.
[0094] In the present embodiment the surface passivation layer 38
is applied to the semiconductor device according to the first
embodiment, but the surface passivation layer 38 can be also
applied to the semiconductor device according to the second
embodiment.
[0095] [Modifications]
[0096] The present invention is not limited to the above-described
embodiment and covers various modifications.
[0097] In the above-described embodiments, the present invention is
applied to, e.g., the semiconductor devices of the structures
including the collector layer 14, the base layer 16, emitter layer
18 formed on the InP substrate 10 in the stated order but is
applicable similarly to the semiconductor device of the so-called
collector-up structure including the emitter layer, the base layer
and the collector layer deposited on the InP substrate in the
stated order.
[0098] One example in which the structure of the semiconductor
device according to the first embodiment is applied to the
semiconductor device of collector-up structure will be explained
with reference to FIG. 10.
[0099] An emitter contact layer 42 of an n.sup.+-InGaAs layer (film
thickness: 350 nm, electron concentration: 1.times.10.sup.19
cm.sup.-3) is formed on a semi-insulating InP substrate 40. An
emitter contact layer 44 of an n.sup.+-InP layer (film thickness:
25 nm, electron concentration: 5.times.10.sup.18 cm.sup.-3) is
formed on the emitter contact layer 42. An emitter layer 46 of an
n-InP layer (film thickness: 50 nm, electron concentration:
3.times.10.sup.17 cm.sup.-3) is formed on the emitter contact layer
44. A base layer 48 of a p.sup.+-InGaAs layer (film thickness: 30
nm, hole concentration: 1.times.10.sup.19 cm.sup.-3) is formed on
the emitter layer 46. A collector layer 50 of an i-InGaAs layer
(film thickness: 300 nm) is formed on the base layer 48. A
collector contact layer 52 of an n.sup.+-InGaAs layer (film
thickness: 50 nm, electron concentration: 1.times.10.sup.19
cm.sup.-3) is formed on the collector layer 50. A collector
electrode 54 of WSi film is formed on the collector contact layer
52. The collector contact layer 52 and the collector layer 50 are
processed in a mesa-shape, and a sidewall insulation film 56 of SiN
film is formed on the side wall of the collector mesa. A base
contact layer 50 of a p.sup.++-GaAsSb layer is formed on the
exposed base layer 48. A base electrode 60 is formed on the base
contact layer 58. The base contact layer 58, the base layer 48, the
emitter layer 46 and the emitter contact layer 44 are processed in
a mesa-shape, and an emitter electrode 62 is formed on the exposed
emitter contact layer 42.
[0100] An InP/InGaAs-based HBT of the collector-up structure is
thus formed, whereby the semiconductor device of the collector-up
structure can have a low base resistance R.sub.B.
[0101] The semiconductor device shown in FIG. 10 is one example of
applications of the structure of the semiconductor device according
to the first embodiment to a semiconductor device of the
collector-up structure. Similarly the structures of the
semiconductor device according to the second and the third
embodiments are applicable to semiconductor devices of the
collector-up structure.
[0102] In the above-described embodiments, the semiconductor device
having the base layer 16, 48 of a p.sup.+-InGaAs layer has been
mainly explained, but the present invention can be widely
applicable to the semiconductor device having the base layer of a
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer. In the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer, it is preferable that
the Ga composition (x) is a range of 0<x.ltoreq.1 and the As
composition (y) is a range of 0<y.ltoreq.1. When the As
composition (y) equals to 1, the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer corresponds to the
InGaAs layer. When the Ga composition (x) equals to 1, the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer corresponds to the
GaAsSb layer. The HBTs having a base layer of the
Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layer can be formed by simply
replacing the base layers 16, 48 of the p.sup.+-InGaAs layers in
the above-described embodiments with the
p.sup.+-Ga.sub.xIn.sub.1-xAs.sub.ySb.sub.1-y layers.
[0103] In the above-described embodiments, the problem of the
hydrogen passivation in a case that the base layers 16, 48 are
formed of a p.sup.+-InGaAs layer has been mainly explained, but the
base resistance R.sub.B reduction effect obtained by the presence
of the base contact layers 30, 58 is very high also in
semiconductor devices including the base layers 16, 48 formed of
layers other than p.sup.+-InGaAs layer and p.sup.+-GaInAsSb layer
which are sensitive to the hydrogen passivation effect.
Accordingly, even in the case that the base layer is formed of
GaAsSb layers, a further low base resistance R.sub.B can be
obtained by providing the base contact layers 30, 58. This
structure is applicable not only to InP/GaInAsSb-based HBTs but
also to GaAs-based HBTs.
[0104] The base contact layers 30, 58 are not essentially formed of
p.sup.++-GaAsSb layer. That is, the base contact layer may be
formed of any semiconductor layer, e.g., a GaInAsSb layer as long
as the material can be epitaxially grown on the base layer, the
collector layer or the emitter layer and can provide a low base
resistance R.sub.B.
[0105] In the present modification an example of the application of
the structure of the semiconductor device according to the first
embodiment to a bipolar transistor of the single hetero structure
including the base layer and the collector layer formed of InGaAs
layer, but the structure is similarly applicable to a bipolar
transistor of the double hetero structure including the collector
layer formed of InP layer or InGaAsP layer.
[0106] The present invention is similarly applicable to a
semiconductor device including the base layers 14, 48 formed of
In.sub.xGa.sub.1-xAs and having a gradient composition having a
composition ratio x gradually changed.
* * * * *