U.S. patent application number 11/144762 was filed with the patent office on 2006-12-07 for uv solid light source of inorganic powder.
Invention is credited to Wei-Hung Lo, Soshchin Naum, Chi-Ruei Tsai.
Application Number | 20060275621 11/144762 |
Document ID | / |
Family ID | 37494485 |
Filed Date | 2006-12-07 |
United States Patent
Application |
20060275621 |
Kind Code |
A1 |
Naum; Soshchin ; et
al. |
December 7, 2006 |
UV solid light source of inorganic powder
Abstract
An inorganic powder uses a UV solid light source, in which an
inorganic powder is based on the inorganic powder of n-silicate
group II elements, and its ingredients have valence 2 ions, such as
Eu.sup.+2, Sm.sup.+2, Yb.sup.+2 and Dy.sup.+2, valence 3 ions
Ce.sup.+3, Tb.sup.+3 and/or Eu.sup.+3. The chemical formula of the
components is
Me.sup.+2.sub.1-xLn.sup.+3.sub.2-ySi.sub.2O.sub.8:TR.sup.+2.sub.x:TR.sup.-
+3.sub.y. A main structure thereof is a hexagonal crystal
structure. When the indium gallium nitride and gallium nitride
based allomorphous semiconductor short wave UV light is used under
conditions of excitement, the multiple band white light can be
obtained.
Inventors: |
Naum; Soshchin; (Taipei,
TW) ; Lo; Wei-Hung; (Taipei, TW) ; Tsai;
Chi-Ruei; (Taipei, TW) |
Correspondence
Address: |
ROSENBERG, KLEIN & LEE
3458 ELLICOTT CENTER DRIVE-SUITE 101
ELLICOTT CITY
MD
21043
US
|
Family ID: |
37494485 |
Appl. No.: |
11/144762 |
Filed: |
June 6, 2005 |
Current U.S.
Class: |
428/570 |
Current CPC
Class: |
Y10T 428/12181 20150115;
C09K 11/7706 20130101; Y02B 20/00 20130101; Y02B 20/181
20130101 |
Class at
Publication: |
428/570 |
International
Class: |
B22F 1/02 20060101
B22F001/02 |
Claims
1. A type of inorganic powder for a UV solid light source, the
construction ingredients' chemical formula is
Me.sup.+2.sub.1-xLn.sup.+3.sub.2-ySi.sub.2O.sub.8:TR.sup.+2.sub.x:TR.sup.-
+3.sub.y, wherein: Me.sup.+2=(wherein Mg.sup.+2, Ca.sup.+2,
Sr.sup.+2, Ba.sup.+2, at least one or more); TR.sup.+2=(wherein
Sm.sup.+2, Yb.sup.+2, Eu.sup.+2, Dy.sup.+2, at least one or more);
TR.sup.+3=(wherein Tb.sup.+3, Ce.sup.+3, Eu.sup.+3, Dy.sup.+3, at
least one or more); Ln.sup.+3=(wherein Y.sup.+3, La.sup.+3,
Gd.sup.+3, Sc.sup.+3, Lu.sup.+3, at least one or more); wherein a
major configuration of an allomorphous surface of the solid light
source is a hexagonal crystal structure, guaranteeing a solid light
source allomorphous short wave, under UV light excitement,
obtainment of multiple band white light.
2. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein ingredients form a cation sub lattice circulation
system, and a concentration of each element is:
0.ltoreq.Mg.ltoreq.0.2; 0.4.ltoreq.Ca.ltoreq.0.8;
0.2.ltoreq.Sr.ltoreq.0.4; and 0.2.ltoreq.Ba.ltoreq.0.4.
3. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein an ingredient concentration relationship is
.SIGMA.(Me.sup.+2+TR.sup.+2)=1.
4. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein contents of rare earth ion in the second cation
node are: 0.5.ltoreq.Y.ltoreq.1.6; 1.ltoreq.La.ltoreq.0.4;
2.ltoreq.Gd.ltoreq.0.4; 1.ltoreq.Sc.ltoreq.0.2; and
0.1.ltoreq.Lu.ltoreq.0.2.
5. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein a rare earth element Ln.sup.+3 and partially
replaced valence 3 catalyst concentration is
.SIGMA.(Ln.sup.+3+TR.sup.+3)=2 atomic weight.
6. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein individual concentrations of the Ce.sup.+3,
Eu.sup.+3, Tb.sup.+3, and Dy.sup.+3 group valence 3 catalyst ions
are about 0.001.ltoreq.TR.ltoreq.0.2 atomic weight.
7. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein a UV light excited Tb.sup.+3 rare earth element
ion node light spectrum zone is .lamda.=545.+-.10 nm.
8. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein when the UV light excites Ce.sup.+3 ion,
green-yellow light is obtained, and a spectrum wavelength is from
about 525 nm to 575 nm.
9. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein after a UV light excited inorganic powder with
Eu.sup.+3 and Dy.sup.+3 in is added, a main visible light spectrum
is in visible light's yellow-orange zone.
10. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein when an inorganic powder material absorption
spectrum is catalyzed by europium ion (Eu.sup.+2) samarium ion
(Sm.sup.+2) ytterbium ion or a combination thereof, an absorption
spectrum is in a blue-sky blue energy band, a radiation wavelength
is in a green-sky blue sub-energy band of the spectrum and a half
span wavelength of the radiation band is between about 40 nm and 80
nm.
11. The inorganic powder for a UV solid light source as claimed in
claim 1, forming the inorganic powder on the solid light source,
the production procedure including: preparing a polymer mixing
materials, including melting glue, epoxy, silicone, or a
combination thereof; coating an allomorphous surface of the solid
light source with inorganic powder; welding the inorganic powder
with amino allomorphous to a metal shell; install a polymer lens
cover; and filling between a shell inside surface and an inorganic
powder polymer coating layer with a polymer material.
12. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein the inorganic powder is coated on the
allomorphous, layer by layer, when an inorganic powder suspended
material concentration is at a minimum.
13. The inorganic powder for a UV solid light source as claimed in
claim 1, wherein an inorganic powder thickness is 30-40
micrometers, and for higher concentration inorganic powder
suspended materials, a thickness may be an about 60-70 micrometers
single layer coating on the allomorphous semiconductor surface.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] An inorganic powder uses a UV solid light source. The
chemical formula of main component is
Me.sup.+2.sub.1-xLn.sup.+3.sub.2-ySi.sub.2O.sub.8:TR.sup.2+.sub.x:TR.sup.-
+3.sub.y. When the indium gallium nitride and gallium nitride-based
allomorphous semiconductor short wave UV light is being used under
conditions of excitement, multiple band white light can be
obtained.
[0003] 2. Description of Related Art
[0004] In recent years, the manufacturing technology of the solid
light source has improved continuously. The efficiency of
illumination is greatly increased. Since the solid light source may
emit nearly monochrome light, and is highly reliable, enjoys
longevity, and can be broadly applied, it has been used in many
lighting equipment applications. There is a trend of replacing
traditional vacuum light bulbs with solid light sources.
[0005] A white light source is mixed from multiple colors of light.
The white light that can be observed by human eyes contains a
mixture of light with at least two or more wavelengths. When human
eyes are simultaneously excited by red, blue and green light, or
simultaneously excited by the cross compensation light of blue and
yellow light, the light is perceived as white light. This principle
can be used to generate a solid light source for the white
light.
[0006] There are main four conventional means of white solid light
source generation. The first method uses three solid light sources
using InGaAlP, GaN and GaN as material. The electric current
passes, under respective control, through the solid light sources
and emits red, green and blue light. Then, a lens is used to mix
the light emitted to generate white light.
[0007] The second method uses two solid light sources with GaN and
GaP as materials. The current passing through these solid light
sources is also individually controlled to emit blue and
yellow-green light to generate white light. Although the efficiency
of illumination for the above mentioned two methods may reach 20
lm/W, if one of the different color solid light sources fails,
normal white light cannot be obtained. Additionally, the positive
bias is different. Thus, many sets of control electric circuits are
required. The cost is high. These are many disadvantages of
practical applications.
[0008] The third method was developed in 1996 by Nichia Chemical of
Japan. An indium gallium nitride blue solid light source and a
yellow light-emitting yttrium aluminum garnet fluorescent material
are used to form a white light source. Although, at the present
time, the efficiency of illumination (as high as 15 lm/W) is lower
than those the prior two methods, only one solid light source chip
set is required. The manufacturing cost is reduced significantly.
Furthermore, the formulation and production technology for the
fluorescent material is mature, and commercial products are
available.
[0009] However, methods two and three utilize a color compensation
principle to generate white light. The continuity of spectrum
wavelength distribution is not as good as sunlight. After the
mixture of the colored light, in the visible light spectrum range
(400 nm-700 nm), the color is not even. The saturation of color is
low. This phenomenon can be ignored by human eyes, because they
only perceive white light. However, high precision optical
detectors, such as a video camera or camera, perceive the color
rendering as low. Errors will be caused during reduction. Thus, the
white light sources generated by these methods can only be used for
simple lighting applications.
[0010] The fourth white light generating method was developed by
Sumitomo Electric Industries, Ltd of Japan. It uses ZnSe material
as the white solid light. A CdZnSe thin film is first formed on the
ZnSe single crystal baseboard. After energizing, the thin film
emits blue light. At the same time, a portion of the blue light
shines on the baseboard and emits a yellow light. Finally, the blue
and yellow light compensate each other and generate white light.
This method utilizes only a solid light source crystal. The
operation voltage is only 2.7V, lower than the 3.5V required for a
GaN solid light source. Additionally, its generation of white light
does not require fluorescent material. However, the disadvantages
are that the efficiency of illumination is only 8 lm/W, and the
service life is only 8000 hours.
[0011] In addition to the aforesaid white light generation methods
by a solid light source, according to the prior art there is
controlled exciting of Y.sub.3Al.sub.5O.sub.12, a co-fluorescent
material wave spectrum attempt. The additives used to replace Al
are Ga or Sc. Alternatively, Lu, Tb, and Sm are used to replace Y
to achieve limited results. However, these fluorescent material
radiation light spectrum are normally located in the green-yellow
zone of visible light. It cannot integrate the design of solid
light source and the soft white light generated by white lamp with
equivalent color temperature of T=2800 K-3500 K.
[0012] In the current art method announced by J. K. Park, the white
solid light source uses Ga--N as a base, and its cold light
properties. ("White Light-emitting Diodes of Ga--N-Based
Sr.sub.2SiO.sub.4:Eu and the Luminescent. Properties" J.
Electrochem. Solid State Lett., vol 5 {2002} p. H11). The chemical
composition used is silicate inorganic powder based on strontium
compounds and with the chemical formula as
Sr.sub.2-xEu.sup.+2.sub.xSiO.sub.4. The principle of illumination
of inorganic powders is related to the transfer radiation of
Eu.sup.+2 replacement of Sr.sup.+2 ions at the crystal sieve anode
nodes. The limited utilization of n-silicate inorganic powder
production of standard blue light In--Ga--N allomorphous in a white
solid light source is that the short wave wavelength used for
self-excitement is around .lamda..ltoreq.420 nm, where .lamda.=395
nm, .lamda.=405 nm, and .lamda.=380 nm are used.
[0013] Although after the aforesaid n-silicate inorganic powder
Sr.sub.2-xEu.sup.+2.sub.xSiO.sub.4 is excited by the UV light, the
radiation light spectrum is yellow-green, and cold color-adjusted
white light can be obtained. Compared to the production equipment
of present art used yttrium aluminum garnet fluorescent material,
it has much higher Rendering index. It offers the main advantages
of the n-silicate inorganic powder solid light source. However,
obtaining this advantage can only be achieved when double portions
of inorganic powder mixing agents are used in the solid light
source.
[0014] In addition to the above-mentioned disadvantages that double
portions of inorganic powder mixing agents must be used, the
strontium europium based n-silicate material has a very low
efficiency. When the angles used for the produced white light
diodes Sr.sub.2-xEu.sup.+2.sub.xSiO.sub.4 are between 30.degree.
and 120.degree., the light intensity is J=0.1-0.3 candlelight. At
the same time, the temperatures of this diode should not exceed
80-90.degree. C. That is, when a solid light source is heated to
these values, the light brightness is reduced by half. In addition,
the temperatures used in the generation process of the inorganic
powder are T=1100-1200.degree. C. This is not sufficient to combine
the quantum effect of the inorganic powders. During the
synthesizing of various known silicate inorganic powder, the
vitrification of products is easily occurs. This forces the
grinding of the vitrified inorganic powder and leads to lower
quantum effect.
[0015] For the present art that uses UV light as solid light source
chips, such as U.S. Pat. No. 6,765,237 "White light-emitting device
based on UV solid light source and phosphor blend", a fluorescent
body is provided that is the combination of two chemical
components, to achieve the UV light excited white light solid light
source.
SUMMARY OF THE INVENTION
[0016] This invention relates to a type of UV solid light source's
inorganic powder. The components of the inorganic powder include
valence 2 ions, such as Eu.sup.+2, Sm.sup.+2, Yb.sup.+2 and
Dy.sup.+2, valence 3 ions. Ce.sup.+3, Tb.sup.+3, and Eu.sup.+3. The
chemical formula of the component is
Me.sup.+2.sub.1-xLn.sup.+3.sub.2-ySi.sub.2O.sub.8:TR.sup.+2.sub.x:TR.sup.-
+3.sub.y. In one embodiment, the element is Me.sup.+2=(among
Mg.sup.+2, Ca.sup.+2, Sr.sup.+2, Ba.sup.+2, at least one or more);
TR.sup.+2=(among Sm.sup.+2, Yb.sup.+2, Eu.sup.+2, Dy.sup.+2, at
least one or more); TR.sup.+3=(among Tb.sup.+3, Ce.sup.+3,
Eu.sup.+3, Dy.sup.+3, at least one or more); and Ln.sup.+3=(among
Y.sup.+3, La.sup.+3, Gd.sup.+3, Sc.sup.+3, Lu.sup.+3, at least one
or more).
[0017] The aforesaid structure is mainly a hexagonal crystal
structure, ensuring that when the component utilizes indium gallium
nitride and gallium nitride based allomorphous semiconductor short
wave UV light under conditions of excitement, the multiple band
white light can be obtained.
[0018] However, the component forms a circulation system for the
cation sub lattice. The concentration of each element is:
0.gtoreq.Mg.ltoreq.0.2; 0.4.ltoreq.Ca.ltoreq.0.8;
0.2.ltoreq.Sr.ltoreq.0.4; and 0.2.ltoreq.Ba.ltoreq.0.4. The
concentration relationship formula is
.SIGMA.(Me.sup.+2+TR.sup.+2)=1.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] No drawings are included with the description of the
preferred embodiments.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0020] This invention utilizes UV light to excited a white solid
light source.
[0021] The novel combination of the inorganic powder for a UV solid
light source is based on the n-silicate II group elements inorganic
powder to overcome the defects found in the present art.
[0022] A catalyst fluorescent material is proposed. It includes
valence 2 ions, such as Eu.sup.+2, Sm.sup.+2, Yb.sup.+2 and
Dy.sup.+2; and valence 3 ions Ce.sup.+3, Tb.sup.+3, Eu.sup.+3, and
Dy.sup.+3.
[0023] A stable and standard equipment that can be repeatedly used
for the inorganic powder synthesis process is developed.
[0024] A new inorganic powder for a short wave solid light source
is produced, passing materials to excite the UV light, violet and
blue light zones of the visible light, and expand the light
spectrum.
[0025] For short wave ultra violet and blue solid light source, the
n-silicate II and III subgroup based inorganic powders can be used.
The chemical formula of the components has the following
characteristics:
Me.sup.+2.sub.1-xLn.sup.+3.sub.2-ySi.sub.2O.sub.8:TR.sup.+2.sub.x:TR.sup.-
+3.sub.y where Me.sup.+2=(among Mg.sup.+2, Ca.sup.+2, Sr.sup.+2,
Ba.sup.+2, at least one or more); TR.sup.+2=(among Sm.sup.+2,
Yb.sup.+2, Eu.sup.+2, Dy.sup.+2, at least one or more);
TR.sup.+3=(among Tb.sup.+3, Ce.sup.+3, Eu.sup.+3, Dy.sup.+3, at
least one or more); Ln.sup.+3=(among Y.sup.+3, La.sup.+3,
Gd.sup.+3, Sc.sup.+3, Lu.sup.+3, at least one or more). The
chemical normality index ratio relationships are x=0.000-0.2,
y=0.000-0.1. The main crystal lattice is hexagonal crystal
structure, which ensures that the fluorescent material can receive
the multiple band light radiation coming from the allomorphous
semiconductor short wave light.
[0026] The aforesaid materials may be called a two dimensional
n-silicate with double catalyst. The crystal lattice has two
different valence cation fields. Valence two cations, such as Ca,
Sr, and Ba form fields with valence values as K1=6 or K1=8. Only
after entering Mg.sup.+2 ion into the cation sub lattice, the
valence values may then be lowered to K1=4. From another angle,
when valence two fields are replaced by large particle Ba.sup.+2
ions, and the valence values may be increased to K1=10 or K1=12.
For rare earth elements, such as Y or Gd field, the valence values
are lower, such as K2=6 or K2=8. For small particle Lu.sup.+3 ions,
radius r.sub.Lu=0.85 A, the reserved valence value is K2=6. When
large scale La.sup.+3 ions are used, the valence values are
increased to K2=8 or K2=10.
[0027] For the two dimensional n-silicate crystal matrix, the
valence value difference for the two cation fields changes as the
internal electric fields that affect the layout of catalyst ions
inside the lattice nodes. The first and second nodes of the two
dimensional n-silicate's crystal lattice are surrounded by oxygen
ions. The valence value is lower, K0=4 inside the crystal lattice
the SiO.sub.4 tetrahedron on the edge possesses island properties;
i.e. they are not in contact with a top or edge. Large-scale
silicone oxide tetrahedron is suitable for absorbing the initial
exciting energy. Thus, for two dimensional-n-silicate based
inorganic powder, not only direct excitement, due to direct
transfer of quantum energy toward catalytic ions, is possible, but
also the absorption of lattices.
[0028] This invention thus describes a series of chemicals:
CaLa.sub.2Si.sub.2O.sub.8--CaCl.sub.2Si.sub.2O.sub.8--CaY.sub.2Si.sub.2O.-
sub.8.
[0029] It is determined that these chemicals are completely soluble
in cerium components of product solid phase matrix. This is one of
the main advantages for recommending n-2-silicate based phase
against single phase and n-silicate. Single phase and n-silicate
based inorganic powder cannot form a continuous band of catalyst
cation (Ce, Nd, Eu) solid solutions, with the same low crystal
capacity. That is, the catalyst dissolves, very little within the
inorganic powder base materials lattice. The low values of this
parameter block the inorganic powder quantity effect from reaching
higher values and, normally, with the side effect of lower
brightness.
[0030] The aforesaid solid state solution is formed through
different valence 3 rare earth quantum rare earth cations. It is
not the only possible catalyst compounds produced by n-2-silicate.
The second type possible is rare earth elements valence 2 ions
entering into second tier element cation fields. In the cation sub
lattice field Ca.sup.+2, Sr.sup.+2 or Ba.sup.+2 ion locations may
be replaced by catalyst ions. Under these conditions, their
oxidation levels are +2. These types of valence 2 ions include
these ions such as Eu.sup.+2, Sm.sup.+2, Yb.sup.+2, Dy.sup.+2. As
when using valence 2 rare earth element ions to replace Ca.sup.+2
ions, in the crystal lattice, these catalytic ions may enter
Mn.sup.+2, Sn.sup.+2, and Pb.sup.+2. They belongs typical chemical
d-elements. Inside the lattice, the existence of these ions may
acquire other wave sections in the light spectrum, such as blue,
green, and red, visible light sub-waves.
[0031] The above-formed similar multiple band lighting waveforms
are very important advantages for the n-2-silicate based inorganic
powder families. In practice, in the similar materials, all the
known catalyst ions are very active. Table 1 lists the known
lighting systems' crystal matrix physical and chemical parameters
comparison. It shows that even a small crystal lattice to
n-2-silicate ratio may promote the increase of lighting
performance. TABLE-US-00001 TABLE 1 Compounds No Parameter
Me.sub.2SiO.sub.4 Me.sup.+2.sub.3Si.sub.3O.sub.12
Me.sup.+2.sub.1Ln.sub.2Si.sub.2O.sub.8 1 Crystal system hexahedron
Three hexagonal dimension 2 Space group Pnam Ja3d P62m 3 Crystal
lattice unit 12 atom 20 atom 14-28 atom volume 4 Solubility of
Ln.sup.+3 Very -10% Average 40% in compounds limited 5 Solubility
of Ln.sup.+2 -5% -10% Average 25% in compounds
[0032] The distance between the n-2-calcium silicate and lanthanum
is 20-25% smaller than the distance between hexagonal n-silicate
and cubic silicates. The reduction of distances between ions not
only increase the ladder slope inside the crystal field, but also
lowers symmetry. These two physical processes will broaden the
catalyst light wave spectrum of catalyst inside the n-2-silicate
matrix. The wider wave spectrum normally lowers the Lumen value
equivalent light. If the standard value is L=380 Lumen/watt, the
half span light spectrum spectrum curve is .lamda..sub.0.5=125 nm.
Then, for the wider wave spectrum's broadband emission body, this
value will be lowered to L=280 Lumen/watt. Then, broad band
illumination at the same time will promote, in practice, the
duplication of all colors in the full light spectrum range. The
last situation indicates that for broadband emitters, the rendering
coefficient, Ra, may be increased. Under standard inorganic powder
conditions, this coefficient is 62. When excited by UV light, this
coefficient is 87.
[0033] The advantages of inorganic powder developed in this
invention are displayed in the components of the materials. The
differences in the materials lie in the formation of the cation sub
lattice circulation system. The concentrations of each element are:
0.0.ltoreq.Mg.ltoreq.0.2; 0.4.ltoreq.Ca.ltoreq.0.8;
0.2.ltoreq.Sr.ltoreq.0.4; 0.2.ltoreq.Ba.ltoreq.0.4 where the
concentration value is: .SIGMA.(Me.sup.+2+TR.sup.+2)=1. When the
rare earth ion contents at the second cation node are:
0.5.ltoreq.Y.ltoreq.1.6; 0.1.ltoreq.La.ltoreq.0.4;
0.2.ltoreq.Gd.ltoreq.0.4; 0.1.ltoreq.Sc.ltoreq.0.2;
0.1.ltoreq.Lu.ltoreq.0.2
[0034] the aforesaid inorganic powder configuration principle is as
follows. In the first cation node are all the known IIA family
ions, such as Mg.sup.+2, Ca.sup.+2, Sr.sup.+2, and Ba.sup.+2.
Apparently, the last 3 ions mentioned before, that is Ca.sup.+2,
Sr.sup.+2, and Ba.sup.+2 are compatible. The fourth cation, that is
Mg.sup.+2, may exist in a minor amount in the ion components, until
gone.
[0035] However, three of the four main valence 2 ions are required
to produce the inorganic powder. Under these conditions, there are
breaks of inorganic powder matrix crystal lattices (volume
increase). This increases the solubilities of the 2 valence
catalyst ions, such as Sm.sup.+2, Yb.sup.+2, Eu.sup.+2, and
Dy.sup.+2. The differences between these valence 2 ions and
subgroup Ba.sup.+2 cation are the radiation gram calorie (energy
level). This determines the lighting ability and lighting spectrum
of the inorganic powder.
[0036] The principle of several rare earth elements coexisting
inside the lattice cation nodes has been used in this invention for
the filing of the inorganic powder ingredient rare earth element
(Number 2) node. Within two cation fields, all the five rare earth
elements Ln exist that are not equipped with lighting energy
(level) within the range of visible light. The inorganic powder
components used are Y.sup.+3, La.sup.+3, Gd.sup.+3, Sc.sup.+3 and
Lu.sup.+3. Among them, the contents of Y.sup.+3 are
0.5.ltoreq.Y.ltoreq.1.6 atomic weight. Among them, La content is
between 0.1.ltoreq.La.ltoreq.0.4 atomic weight. Thus, it has to be
pointed out that the rare earth element ions Y+La belong to two
different sub-groups. They are the heavy sub-group and light
sub-group, respectively.
[0037] To ensure that the group in the second cation node maintains
the stability of the unusual combination of these ions, additional
ions are added. They are gadolinium ion 0.2.ltoreq.Gd.ltoreq.0.4,
lutetium ion 0.1.ltoreq.Lu.ltoreq.0.2 and scandium ion
0.1.ltoreq.Sc.ltoreq.0.2. The inorganic powder base material's
crystal lattice will then reach stability at this time. Even at the
second field of the lattice, some of the rare earth element ions
are replaced by Tb.sup.+3, Ce.sup.+3, Eu.sup.+3, and Dy.sup.+3
series catalytic rare earth ions. Within the catalyst ions, such as
Ce.sup.+3 and Dy.sup.+3, exist two different rare earth element sub
group. Thus, the five 5 Ln ions can be formed, and, at the same
time, the second cation node may be lowered after the introduction
of large particle Ce.sup.+3 ions, and crushed with inorganic powder
particles to produce mechanical strength for the lattice.
[0038] Adding La.sup.+3 ion into the ingredients of cation node
will increase the chemical parameters of the crystal lattice. At
this time, the small particles of lutetium ion Lu.sup.+3, located
at the second part of the lattice crystal node, counter reacts with
the lattice dimensions. Through the lowering of the crystal lattice
parameters, the static electricity of the inside field increases.
This phenomenon, together with the Ce.sup.+3, Eu.sup.+3, Tb.sup.+3,
and Dy.sup.+3 base materials' inorganic powders, leads to the
increase of the catalyst ion radiation shift strength. With the
increase of the catalyst ion radiation shift strength, the light
brightness of the inorganic powder inside the semi-conductor solid
light source will increase.
[0039] The unique and beneficial properties of this inorganic
powder shows in the ingredients of the inorganic powder. The
characteristics are the main rare earth element Ln.sup.+3 and
partial replacement of 3 valence catalyst concentration values are
equal to .SIGMA.(Ln.sup.3++TR.sup.+3)=2 atomic weight. Under these
conditions, the individual concentration of the valence 3 catalyst
ions of Ce.sup.+3, Eu.sup.+3, Tb.sup.+3; Dy.sup.+3 groups are
between 0.001.ltoreq.TR.ltoreq.0.2 atomic weight. This guarantees
that the excited Tb.sup.+3 rare earth element ion node's light
spectrum is .lamda.=545.+-.10 nm. When the Ce.sup.+3 ion is
excited, green-yellow light is obtained. The light spectrum is
between 525 nm and 575 nm. After adding Eu.sup.+3 and Dy.sup.+3
ions to the rare earth element node, the main light spectrum is
located in the yellow-orange zones of visible light.
[0040] The embodiments of this invention use UV radiation wave
lengths of .lamda.<430 nm the solid light source excited
inorganic powder light spectrum. The type of ingredients is (Ca,
Sr, Ba)(Y, La, Gd, Lu, Sc).sub.2Si.sub.2O.sub.8. Among them, the
Ce.sup.+3 ion light emission towards broad band zone wavelengths
are .lamda.=500 to 720 nm. They include the green, yellow, orange
and red color zones of the visible light. The Tb.sup.+3 ion light
spectrum covers Ce.sup.+3 ion light spectrum. The highest
wavelengths in the light spectrum are green light and yellow light
with sub-energy band perimeter wavelength as .lamda.=545.+-.10 nm.
Using the europium ion to excite, the light emmission will appear
in the orange light spectrum zone .lamda.=610-625 nm. The excited
catalyst ion Dy.sup.+3 is a narrow band spectrum. The highest
spectrum value is .lamda.=576 nm.
[0041] From the above information, it can be determined that
inorganic powder radiations may be broadband and narrow band. The
radiation movement changes at the same time. For example, Ce.sup.+3
ion has very short radiation, equals to .tau..ltoreq.100 ns. The
properties of Tb.sup.+3 and Eu.sup.+3 inorganic powder are that the
residual light's average time is between 1 to 5 ms.
[0042] The aforesaid high light spectrum kinetic properties are
shown in their ingredient properties. The material absorption
spectrum, when using europium ion (Eu.sup.+2) and/or samarium ion
(Sm.sup.+2) and/or ytterbium ion to catalyze the inorganic powder,
tends toward blue and sky blue sub-energy bands of the visible
spectrum. At this time, the aforesaid ion radiation wavelengths are
at the green-sky blue subenergy band, and the half span of the
radiation band is .lamda..sub.0.5=40-80 nm.
[0043] The Eu.sup.+2, Sm.sup.+2, and Yb.sup.+2 series valence 2
rare earth element ion excites the first cation node results that
inorganic powder particle emits sand color-yellow color. This is
related to the special energy conditions; that is, the electric
shift band between O.sup.-2 and TR.sup.+ ion, inside the inorganic
powder lattice. This strong energy band presents strong absorption
wavelength for short wave between 400 nm and 480 nm to color the
inorganic powder. Normally, through adding Eu.sup.+2, Sm.sup.+2 and
even Yb.sup.+2 to the ingredients of inorganic powder, the surface
color of the inorganic powder is increased.
[0044] The use of Eu.sup.+2 catalyzed n-silicate inorganic powder
light spectrum has special properties (wavelengths between 480 and
530 nm). Sm.sup.+2 catalyzed inorganic powder wavelength is (540 to
590 nm). Yb.sup.+2 catalyzed inorganic powder wavelength is (420
nm).
[0045] After synthesizing the above-mentioned inorganic powder, the
particle diameters are averaging 0.6-12 micrometers. After grinding
to particle diameters below 2 to 3 micrometers, the performance
will not be lost.
[0046] In the embodiment of this invention, to form light emission
coating on the solid light source, the prepared polymer mixing
materials using a melting glue as a base material are used. The
mixing materials include at least a melting glue, epoxy, or
silicone (step 1). Afterwards, when the suspended material
concentration is the lowest, the inorganic powder is then coated,
layer by layer, onto the surface of the solid light source
allomorphous (step 2). The thickness of each layer is 30-40
micrometers. For inorganic powder with a higher concentration of
suspended material the thickness may be 60-70 micrometers, as a
single layer, for coating on the surface of the allomorphous solid
light source.
[0047] Then, the amino allomorphous coated with inorganic powder is
welded into the body of the metal shell. (Step 3). Then, a lens
polymer cover is added (Step 4). Between the shell inside surface
and the inorganic powder polymer coating layer, two silicone oxide
melting glues and polymer mixing materials are added. (Step 5).
[0048] In the aforesaid structure, the voltage supply to the
allomorphous electrodes is V.sub.F=4V. The current is I.sub.F=50
mA. The observed white light color temperature T=4500 K is as
strong white light. When the light strength of the diode is at
2.THETA..sub.1/2=20', it reaches J=2 candle light. As mentioned
above, the novel inorganic powder chemical structure for a UV solid
light source is a rare invention. The requirements for industrial
applications, innovation and advancement are all met. Thus, this
application is submitted in accordance with the law.
[0049] The aforesaid embodiments serve as examples, only. They are
not intended to limit the scope of this invention.
* * * * *