U.S. patent application number 11/432491 was filed with the patent office on 2006-11-23 for semiconductor device and manufacturing method of the same.
Invention is credited to Yoshito Nakazawa, Yuji Yatsuda.
Application Number | 20060261391 11/432491 |
Document ID | / |
Family ID | 37447556 |
Filed Date | 2006-11-23 |
United States Patent
Application |
20060261391 |
Kind Code |
A1 |
Nakazawa; Yoshito ; et
al. |
November 23, 2006 |
Semiconductor device and manufacturing method of the same
Abstract
In a power MISFET having a trench gate structure with a dummy
gate electrode, a technique is provided for improving the
performance of the power MISFET, while preventing electrostatic
breakdown of a gate insulating film therein. A power MISFET having
a trench gate structure with a dummy gate electrode, and a
protective diode are formed on the same semiconductor substrate.
The protective diode is provided between a source electrode and a
gate interconnection. In a manufacturing method of such a
semiconductor device, a polycrystalline silicon film for the dummy
gate electrode and a polycrystalline silicon film for the
protective diode are formed simultaneously. A source region of the
power MISFET and an n.sup.+-type semiconductor region of the
protective diode are formed in the same step.
Inventors: |
Nakazawa; Yoshito; (Tokyo,
JP) ; Yatsuda; Yuji; (Tokyo, JP) |
Correspondence
Address: |
ANTONELLI, TERRY, STOUT & KRAUS, LLP
1300 NORTH SEVENTEENTH STREET
SUITE 1800
ARLINGTON
VA
22209-3873
US
|
Family ID: |
37447556 |
Appl. No.: |
11/432491 |
Filed: |
May 12, 2006 |
Current U.S.
Class: |
257/296 ;
257/E29.027; 257/E29.133; 257/E29.136; 257/E29.146 |
Current CPC
Class: |
H01L 29/4916 20130101;
H01L 21/28008 20130101; H01L 2224/0603 20130101; H01L 29/42368
20130101; H01L 29/7811 20130101; H01L 29/0696 20130101; H01L
21/28556 20130101; H01L 29/4238 20130101; H01L 29/7808 20130101;
H01L 29/456 20130101; H01L 29/66734 20130101; H01L 29/4236
20130101; H01L 29/407 20130101; H01L 29/66545 20130101; H01L
29/66484 20130101; H01L 29/7813 20130101; H01L 27/0255 20130101;
H01L 29/66727 20130101 |
Class at
Publication: |
257/296 |
International
Class: |
H01L 29/94 20060101
H01L029/94 |
Foreign Application Data
Date |
Code |
Application Number |
May 20, 2005 |
JP |
2005-147914 |
Claims
1. A semiconductor device including a field-effect transistor and a
diode formed over the same semiconductor substrate, the
semiconductor device comprising: a drain region of said
field-effect transistor formed over the semiconductor substrate; a
channel forming region of said field-effect transistor formed over
the drain region; a source region of said field-effect transistor
formed over the channel forming region; a trench reaching the drain
region from an upper surface of the source region; a first
insulating film formed in the trench; a first conductive film
formed over the first insulating film in the trench; a gate
insulating film of said field-effect transistor formed over the
first insulating film in the trench; a gate electrode of said
field-effect transistor formed over the gate insulating film in the
trench; a second conductive film made of the same film as the first
conductive film, and formed over the semiconductor substrate; and
an anode region and a cathode region of the diode formed in the
second conductive film, wherein each of the anode region and the
cathode region of the diode is electrically connected to the gate
electrode or the source region of the field-effect transistor.
2. The semiconductor device according to claim 1, wherein a
plurality of cathode regions are formed in the second conductive
film, wherein said anode region is disposed in contact with the
plurality of cathode regions among the plurality of cathode
regions, wherein one of the plurality of cathode regions is
electrically connected to the gate electrode of the field-effect
transistor, and wherein the other one of the plurality of cathode
regions is electrically connected to the source region of the
field-effect transistor.
3. The semiconductor device according to claim 1, wherein the gate
electrode, and the first and second conductive films are made of
polycrystalline silicon films, and wherein the resistance of the
gate electrode is lower than that of the first conductive film.
4. The semiconductor device according to claim 1, wherein the gate
electrode and the first conductive film are electrically connected
to each other.
5. The semiconductor device according to claim 1, wherein the
thickness of the first insulating film is larger than that of the
gate insulating film.
6. A semiconductor device comprising: (a) a field-effect transistor
having a trench gate structure with a dummy gate electrode; and (b)
a protective diode, wherein the field-effect transistor and the
protective diode are formed over the same semiconductor
substrate.
7. The semiconductor device according to claim 6, wherein a cathode
region of the protective diode is connected to the gate electrode
of the field-effect transistor, and an anode region of the
protective diode is connected to a source region of the
field-effect transistor.
8. The semiconductor device according to claim 6, wherein the anode
region of the protective diode is connected to the gate electrode
of the field-effect transistor, and the cathode region of the
protective diode is connected to the source region of the
field-effect transistor.
9. The semiconductor device according to claim 6, wherein a
plurality of protective diodes are connected between the gate
electrode and the source region of the field-effect transistor.
10. The semiconductor device according to claim 9, wherein one
cathode region of the plurality of protective diodes whose anode
regions are connected to each other is connected to the gate
electrode of the field-effect transistor, and the other cathode
region thereof is connected to the source region of the
field-effect transistor.
11. The semiconductor device according to claim 6, wherein a
polycrystalline silicon film for the protective diode included in
the protective diode is formed in the same step as that of a
polycrystalline silicon film for the dummy gate electrode included
in the dummy gate electrode.
12. The semiconductor device according to claim 6, wherein a
cathode region of the protective diode is formed in the same step
as that of the source region of the field-effect transistor.
13. The semiconductor device according to claim 6, wherein a
concentration of impurities introduced in the dummy gate electrode
is lower than that of impurities introduced in the gate electrode
of the field-effect transistor.
14. The semiconductor device according to claim 6, wherein a
resistance of the dummy gate electrode is larger than that of the
gate electrode of the field-effect transistor.
15. The semiconductor device according to claim 6, wherein a
thickness of a lead-out part for the dummy gate electrode is
smaller than that of a lead-out part for the gate electrode of the
field-effect transistor.
16. The semiconductor device according to claim 6, wherein the
dummy gate electrode and the gate electrode of the field-effect
transistor are electrically connected to each other.
17. The semiconductor device according to claim 6, wherein a first
contact hole connected to the dummy gate electrode and a second
contact hole connected to the gate electrode of the field-effect
transistor are arranged linearly, and a gate interconnection is
disposed linearly over the first contact hole and the second
contact hole.
18. The semiconductor device according to claim 6, wherein the
dummy gate electrode is connected to the source region of the
field-effect transistor, and wherein the first contact hole
connected to the dummy gate electrode and the second contact hole
connected to the gate electrode of the field-effect transistor are
arranged linearly, and in a position where a source electrode over
the first contact hole is formed in a recessed shape, the
corresponding gate interconnection over the second contact hole is
formed in a convex shape, while, in a position where the source
electrode is formed in a convex shape, the corresponding gate
interconnection is formed in a recessed shape.
19. A method of manufacturing a semiconductor device, the
semiconductor device including: a field-effect transistor having a
trench gate structure with a dummy gate electrode; and a protective
diode, the method comprising a step of: forming a polycrystalline
silicon film for the protective diode, which is included in the
protective diode, and a polycrystalline silicon film for the dummy
gate electrode, which is included in the dummy gate electrode, in
the same step.
20. The method according to claim 19, further comprising a step of:
forming the cathode region of the protective diode and the source
region of the field-effect transistor in the same step.
21. A method of manufacturing a semiconductor device, the method
comprising the steps of: (a) forming a trench in a semiconductor
substrate; (b) forming an insulating film over the semiconductor
substrate including an inner surface of the trench; (c) forming a
first polycrystalline silicon film over the insulating film; (d)
introducing an impurity into the first polycrystalline silicon
film; (e) annealing the first polycrystalline silicon film with the
impurity introduced therein; (f) forming, by patterning the first
polycrystalline silicon film, a dummy gate electrode with a part of
the first polycrystalline silicon film left in the trench, while
forming an anode region of the protective diode over the
semiconductor substrate; (g) forming a gate insulating film over
the semiconductor substrate including the trench; (h) forming a
second polycrystalline silicon film with a conductive impurity
introduced therein over the gate insulating film; (i) forming a
gate electrode with a part of the second polycrystalline silicon
film left in the trench by patterning the second polycrystalline
silicon film; (j) forming a semiconductor region for channel
formation by introducing an impurity into a predetermined region of
the semiconductor substrate; (k) forming a source region by
introducing an impurity into a predetermined region of the
semiconductor substrate; and (l) forming a cathode region of the
protective diode by introducing an impurity into a predetermined
region of the semiconductor substrate.
22. The method according to claim 21, wherein the step (k) and the
step (l) are carried out in the same step.
23. The method according to claim 21, wherein the step (e) is
carried out before the step (j).
24. The method according to claim 21, wherein a concentration of
the impurities introduced into the first polycrystalline silicon
film is lower than that of the impurities introduced into the
second polycrystalline silicon film.
25. The method according to claim 21, wherein, in the step (d), the
impurity is introduced by an ion implantation method after forming
the first polycrystalline silicon film, and wherein, in the step
(h), the second polycrystalline silicon film previously containing
the impurity is deposited.
26. The method according to claim 21, wherein a thickness of a
lead-out part for the dummy gate electrode is smaller than that of
a lead-out part for the gate electrode.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] The present application claims priority from Japanese patent
application No. 2005-147914 filed on May 20, 2005, the content of
which is hereby incorporated by reference into this
application.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a semiconductor device, and
a manufacturing method of the same, and more particularly to a
technique suitable for application to a power MISFET (Metal
Insulator Semiconductor Field Effect Transistor) having a trench
gate structure with a dummy gate electrode, and a manufacturing
method of the same.
[0003] A patent document 1, as shown in FIG. 1, discloses a
structure having a power MISFET 101 with a trench gate structure, a
planer gate type MISFET 102, and a protective diode 103 formed on
the same substrate. In a method of manufacturing this structure, a
polycrystalline silicon film included in a gate electrode of the
power MISFET 101, and a polycrystalline silicon film included in
the protective diode 103 are formed independently in different
steps. The thickness of the polycrystalline silicon film
constituting the gate electrode is larger than that of the
polycrystalline silicon film included in the protective diode 103.
A source region of the power MISFET 101 and a cathode of the
protective diode are formed in the same step.
[0004] A patent document 2 discloses a structure having a planer
gate type power MISFET and a protective diode formed on the same
substrate. In a method of manufacturing this structure, a
polycrystalline silicon film included in a gate electrode of the
planer gate type power MISFET and a polycrystalline silicon film
included in the protective diode are formed in the same step. Also,
a source region of the planer gate type power MISFET and a cathode
of the protective diode are formed in the same step.
[0005] A patent document 3 discloses a power MISFET having a trench
gate structure with a dummy gate electrode. In this power MISFET,
the dummy gate electrode is connected to a source potential.
[0006] A patent document 4 discloses another power MISFET having a
trench gate structure with a dummy gate electrode. In this power
MISFET, the dummy gate electrode is connected to a positive
electric potential.
[0007] A patent document 5 discloses a further power MISFET having
a trench gate structure with a dummy gate electrode. In this power
MISFET, the dummy gate electrode is in a floating state.
[0008] [Patent document 1] Japanese Patent Publication
[0009] [Patent document 2] Japanese Unexamined Patent Publication
No. 2000-307109
[0010] [Patent document 3] U.S. Pat. No. 5,998,833
[0011] [Patent document 4] Japanese Unexamined Patent Publication
No. Sho 63(1988)-296282
[0012] [Patent document 5] Japanese Unexamined Patent Publication
No. Hei 04(1992)-229662
SUMMARY OF THE INVENTION
[0013] A power MISFET (field-effect transistor) having a trench
gate structure includes a gate electrode embedded via a gate
insulating film in a trench made on a main surface of a
semiconductor substrate. A source region is provided on the top
main surface of the semiconductor substrate, whereas a drain region
is provided on a back surface opposite to the main surface of the
substrate. Between the source region and the drain region, a
channel is formed in a semiconductor region opposed to the sidewall
of the gate electrode disposed in the trench. This causes current
to pass between the source region and the drain region via the
channel. That is, the power MISFET with the trench gate structure
is configured to cause the current to pass longitudinally (in a
thickness direction of the semiconductor substrate).
[0014] In recent years, a power MISFET having a trench gate
structure with a dummy gate electrode has been developed by
improving the above-mentioned power MISFET with the trench gate
structure. In this power MISFET having the trench gate structure
with the dummy gate electrode, the dummy gate electrode and the
gate electrode are laminated in the trench provided in the main
surface of the semiconductor substrate, and are insulated from each
other with an insulating film provided therebetween. Furthermore,
an insulating film is formed between the dummy gate electrode and
the trench, and a gate insulating film is formed between the gate
electrode and the trench. Thus, providing the dummy gate electrode
can decrease parasitic capacitance (feedback capacitance) caused
between the gate electrode and the drain region. That is, the
considerable parasitic capacitance occurs between the gate
electrode formed in the trench and the drain region formed on the
back surface of the semiconductor substrate. However, the dummy
gate electrode is provided between the gate electrode and the drain
region, and is connected to the source potential, thus providing a
shield effect of decreasing the parasitic capacitance. Since the
shield effect by the dummy gate electrode can decrease the
parasitic capacitance between the gate electrode and the drain
region, this MISFET has an advantage that it can achieve high-speed
switching as compared with the conventional power MISFET having the
trench gate structure without a dummy gate electrode.
[0015] When a voltage is applied to the drain region with the gate
and the source region being grounded, the electric field becomes
strongest at the bottom of the trench. Thus, a withstand voltage
(BVdss) is determined based on a voltage which causes avalanche
breakdown in the vicinity of the bottom of the trench. In the power
MISFET having the trench gate structure provided with the dummy
gate electrode, an effect of releasing the electric field of the
dummy gate electrode can weaken the electric field at the bottom of
the trench, and thus reduce the frequency of occurrence of the
avalanche breakdown in the vicinity of the trench. Thus, the power
MISFET has an advantage of improving the withstand voltage (BVdss).
For this reason, the power MISFET having the trench gate structure
with the dummy gate electrode has been used. It should be noted
that the withstand voltage (BVdss) is a breakdown voltage obtained
when a voltage is applied between the source region and the drain
region with the gate electrode and the source region
short-circuited.
[0016] In the power MISFET having the trench gate structure without
any dummy gate electrodes, even if the performance of the MISFET is
intended to be enhanced by thinning the gate insulating film, the
defective formation of the gate insulating film is likely to occur
at the corner of the bottom of the trench (weak spot) in which the
gate electrode is embedded. This fails to thin the gate insulating
film. In contrast, in the power MISFET having the trench gate
structure with the dummy gate electrode, the dummy gate electrode
is formed via the insulating film at the corner of the bottom of
the trench. This insulating film is formed more thickly than the
gate insulating film so as to release the electric field at the
bottom of the trench, and thus to improve the withstand voltage
(BVdss). Even the thinned gate insulating film does not allow the
corner of the bottom of the trench to become the weak spot. Thus,
the power MISFET having the trench gate structure with the dummy
gate electrode has an advantage that the high performance of the
MISFET, including decrease in on-state resistance, can be easily
achieved by the thinning of the gate insulating film.
[0017] The thinning of the gate insulating film, however, raises a
problem that electrostatic breakdown resistance of the gate
insulating film is degraded. That is, the thinning of the gate
insulating film can achieve the high performance of the MISFET,
while disadvantageously resulting in degraded electrostatic
breakdown resistance of the MISFET to noise, such as static
electricity (surge).
[0018] The need to mount a protective circuit against noise, such
as static electricity, has been heightened in the power MISFETs for
vehicle applications.
[0019] In view of the foregoing problems, it is an object of the
invention to provide a technique for improving the performance of a
power MISFET having a trench gate structure with a dummy gate
electrode, while preventing electrostatic breakdown of a gate
insulating film therein.
[0020] It is another object of the invention to provide a technique
for manufacturing the power MISFET having the trench gate structure
with the dummy gate electrode, which can easily form a structure
for preventing the electrostatic breakdown of the gate insulating
film.
[0021] The above-mentioned, and other objects, and new features of
the invention will be apparent to those skilled in the art from
consideration of the specification and the accompanying
drawings.
[0022] A brief description of typical aspects according to the
invention disclosed herein will be given below.
[0023] In one aspect of the invention, a semiconductor device
comprises a field-effect transistor and a diode that are formed on
the same semiconductor substrate. The semiconductor device includes
a drain region of the field-effect transistor formed on the
semiconductor substrate, a channel forming region of the
field-effect transistor formed on the drain region, and a source
region of the field-effect transistor formed on the channel forming
region. The semiconductor device also includes a trench reaching
the drain region from an upper surface of the source region, a
first insulating film formed in the trench, a first conductive film
formed on the first insulating film in the trench, and a gate
insulating film of the field-effect transistor formed over the
first conductive film in the trench. Furthermore, the semiconductor
device includes a gate electrode of the field-effect transistor
formed on the gate insulating film in the trench, a second
conductive film made of the same film as the first conductive film,
and formed over the semiconductor substrate, and an anode region
and a cathode region of the diode formed in the second conductive
film. Each of the anode region and the cathode region of the diode
is electrically connected to the gate electrode or the source
region of the field-effect transistor.
[0024] In another aspect of the invention, a semiconductor device
comprises (a) a field-effect transistor having a trench gate
structure with a dummy gate electrode, and (b) a protective diode
for protecting the field-effect transistor from electrostatic
breakdown. The field-effect transistor and the protective diode are
formed on the same semiconductor substrate.
[0025] In a further aspect of the invention, a method of
manufacturing a semiconductor device relates to manufacturing of a
semiconductor device which includes a field-effect transistor
having a trench gate structure with a dummy gate electrode, and a
protective diode for protecting the field-effect transistor from
electrostatic breakdown. In the method, a polycrystalline silicon
film for the protective diode included in the protective diode, and
a polycrystalline silicon film for the dummy gate electrode
included in the dummy gate electrode are formed in the same step.
Furthermore, the cathode region of the protective diode and the
source region of the field-effect transistor are also formed in the
same step.
[0026] The effects provided by the typical embodiments of the
disclosed invention will be briefly explained below.
[0027] Since the power MISFET having the trench gate structure with
the dummy gate electrode, and the protective diode are formed on
the same semiconductor substrate, the electrostatic breakdown of
the gate insulating film can be prevented, while improving the
performence of the MISFET.
[0028] The polycrystalline silicon film for the protective diode
included in the protective diode, and the polycrystalline silicon
film for the dummy gate electrode included in the dummy gate
electrode are formed in the same step. Furthermore, the cathode
region of the protective diode and the source region of the power
MISFET having the trench gate structure with the dummy gate
electrode are formed in the same step. This can reduce the
complexity of the processing steps, and thus easily manufacture the
power MISFET having the trench gate structure with the dummy gate
electrode, and the protective diode.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] FIG. 1 is a sectional view of a structure of a semiconductor
device which has been considered by the inventors;
[0030] FIG. 2 is a plan view showing a semiconductor device
according to one preferred embodiment of the invention;
[0031] FIG. 3 is a sectional view taken along a line A-A of FIG.
2;
[0032] FIG. 4 is a sectional view taken along a line B-B of FIG.
2;
[0033] FIG. 5 is a diagram showing an example of a circuit which
utilizes the semiconductor device according to the first preferred
embodiment;
[0034] FIG. 6 is a sectional view showing a manufacturing step of
the semiconductor device according to the embodiment;
[0035] FIG. 7 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 6;
[0036] FIG. 8 is a plan view showing the manufacturing step of the
semiconductor device according to the embodiment;
[0037] FIG. 9 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 7;
[0038] FIG. 10 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 9;
[0039] FIG. 11 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 10;
[0040] FIG. 12 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 11;
[0041] FIG. 13 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 12;
[0042] FIG. 14 is a plan view showing the manufacturing step of the
semiconductor device according to the embodiment;
[0043] FIG. 15 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 13;
[0044] FIG. 16 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 15;
[0045] FIG. 17 is a plan view showing the manufacturing step of the
semiconductor device according to the embodiment;
[0046] FIG. 18 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 16;
[0047] FIG. 19 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 18;
[0048] FIG. 20 is a plan view showing the manufacturing step of the
semiconductor device according to the embodiment;
[0049] FIG. 21 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 19;
[0050] FIG. 22 is a plan view showing the manufacturing step of the
semiconductor device according to the embodiment;
[0051] FIG. 23 is a sectional view showing a manufacturing step of
the semiconductor device following the step of FIG. 21;
[0052] FIG. 24 is a plan view showing an example of a layout
structure of the semiconductor device according to the embodiment;
and
[0053] FIG. 25 is a plan view showing an example of a layout
structure of the semiconductor device according to the
embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0054] The following embodiments will be described by being divided
into a plurality of sections or embodiments if necessary for
convenience. However, unless otherwise specified, they are not
irrelevant to one another. One of the embodiments has to do with
modifications, details and supplementary explanations of some or
all of the other.
[0055] When reference is made to the number of elements or the like
(including the number of pieces, numerical values, quantity, range,
etc.) in the following description of the embodiments, the number
thereof is not limited to a specific number, and may be greater
than, or less than, or equal to the specific number, unless
otherwise specified and definitely limited to the specific number
in principle.
[0056] It is also needless to say that components (including
elements or process steps, etc.) employed in the following
description of the embodiments are not always essential, unless
otherwise specified and considered to be definitely essential in
principle.
[0057] Similarly, when reference is made to the shapes, positional
relations and the like of the components or the like in the
following description of the embodiments, they will include ones
substantially analogous or similar to their shapes or the like,
unless otherwise specified and considered not to be definitely so
in principle, etc. This is similarly applied even to the
above-described numerical values and range.
[0058] The preferred embodiments of the invention will be described
below in detail based on the accompanying drawings. Note that the
same reference numbers will be used to refer to the same or like
parts in principle throughout all the drawings for explanation of
the embodiments, and thus the repeated description thereof will be
omitted. Furthermore, for better viewing of the drawings, hatching
may be provided even in the plan view.
[0059] FIG. 2 is a substantially plan view showing a semiconductor
chip CP according to the embodiment of the invention. As shown in
FIG. 2, in the center of the semiconductor chip CP, is formed a
source electrode 24 of the power MISFET, a part of which serves as
a source pad SP. That is, although not shown in FIG. 2, a polyimide
resin film is formed as a passivation film over a main surface of
the semiconductor chip CP, and a part of the source electrode 24 is
exposed from the polyimide resin film to form the source pad
SP.
[0060] A gate interconnection 25 is formed so as to surround the
outer periphery of the source electrode 24. The gate
interconnection 25 is also covered with the polyimide resin film,
from which a part of the gate intersection 25 is exposed to form a
gate pad GP. The source pad SP and the gate pad GP are connected to
bonding wires and the like.
[0061] A plurality of n.sup.+-type semiconductor regions 15 and
p.sup.--type semiconductor regions 8a are formed between the source
electrode 24 and the gate pad GP. That is, a plurality of
protective diodes (Zener diodes) each made of a pn junction are
formed between the source electrode 24 and the gate pad GP.
Referring to FIG. 2, two sets of pairs of protective diodes which
are connected so as to be oriented in different directions from
each other (back to back) are formed between the source electrode
24 and the gate pad GP in series. More specifically, two sets of
pairs of protective diodes, each pair consisting of anode
electrodes (p.sup.--type semiconductor regions 8a serving as an
anode region) connected to each other, are connected in series.
Cathode electrodes of one pair of protective diodes (n.sup.+-type
semiconductor region 15 serving as a cathode region) are connected
to the gate interconnection 25. And, cathode electrodes of the
other pair of protective diodes (n.sup.+-type semiconductor region
15) are connected to the source electrode 24.
[0062] FIG. 3 is a sectional view taken along a line A-A of FIG. 2.
As shown in FIG. 3, on a semiconductor substrate 1, an n-type
epitaxial layer 2 into which n-type impurities are introduced is
formed, and a p-type well 3 into which p-type impurities are
introduced is formed in the n-type epitaxial layer 2. An element
isolation region 4 for separating the elements is formed at a
predetermined area on the n-type epitaxial layer 2. Particularly,
an n-channel-type power MISFET is formed at an active region
isolated by the element isolation region 4. The p-type well 3 is
provided for formation of the pn junction having a high withstand
voltage, and is connected to a source potential.
[0063] The n-channel-type power MISFET includes a source region 14
which is a semiconductor region provided in the n-type epitaxial
layer 2, and a drain region consisting of the n-type epitaxial
layer 2 and the semiconductor substrate 1. In the n-type expitaxial
layer 2 between the source region 14 and the drain region, a
semiconductor region 13 for formation of a channel (channel forming
region) is formed. For example, elements, such as phosphorous (P)
or arsenic (As), are introduced or implanted into the source region
14, and elements, such as boron (B), are introduced or implanted
into the semiconductor region 13 for channel formation.
[0064] A plurality of trenches 6 extending in a direction
perpendicular to the main surface of the semiconductor substrate 1
(in a thickness direction of the semiconductor substrate 1) are
formed on the main surface side of the substrate 1. The trench 6
penetrates the semiconductor region 13 for channel formation from
the main surface side of the semiconductor substrate 1, and ends at
the lower part of the n-type epitaxial layer 2. That is, the trench
6 is formed so as to extend from the upper surface of the source
region 14 to reach the drain region.
[0065] In FIG. 3, at the lower part of the inside of each of the
two trenches 6 as illustrated on the right side of the figure, a
dummy gate electrode 9a is formed via an insulating film (first
insulating film) 7. At the upper part of the inside of the trench
6, a gate electrode 11a is formed via a gate insulating film 10.
Although the insulating film 7 and the gate insulating film 10 are
made of, for example, a silicon oxide film, the thickness of the
insulting film 7 is greater than that of the gate insulating film
10. More specifically, the thickness of the insulating film 7 is,
for example, about 200 nm, and the thickness of the gate insulting
film 10 is, for example, about 50 nm.
[0066] The dummy gate electrode 9a and the gate electrode 11a are
made of, for example, a polycrystalline silicon film having low
resistance, and insulated from each other by an insulating film
intervening between the dummy gate electrode 9a and the gate
electrode 11a. The dummy gate electrode (made of a first conductive
film) 9a is electrically connected to the gate electrode 11a. That
is, in the first embodiment, the dummy gate electrode 9a and the
gate electrode 11a are set at the same potential, whereby the
withstand voltage of the gate electrode 11a cannot be affected by
an insulation resistance of the insulating film intervening between
the dummy gate electrode 9a and the gate electrode 11a, resulting
in improved withstand voltage of the gate electrode 11a. That is,
the withstand voltage of the gate electrode 11a is apt to be
affected by the insulation resistance of the insulating film
intervening between the dummy gate electrode 9a and the gate
electrode 11a. In the first embodiment, however, the dummy gate
electrode 9a and the gate electrode 11a with the insulating film
sandwiched therebetween are set at the same potential, so that a
voltage load is not applied to the intervening insulating film,
thereby improving the withstand voltage of the gate electrode
11a.
[0067] The gate electrode 11a is a control electrode of the power
MISFET, to which a voltage for control of the operation of the
power MISFET is applied. The upper surface of the gate electrode
11a is slightly lower than the top part on the main surface side of
the semiconductor substrate 1 (namely, the upper surface of the
source region 14). On the upper surface of the gate electrode 11a
recessed downward, sidewalls 12 made of, for example, a silicon
oxide film, are embedded. A channel of the power MISFET is formed
in the semiconductor region 13 for channel formation opposite to
the side of the gate electrode 11a. That is, a channel current of
the power MISFET passes along the side of the trench 6 in the
thickness direction of the semiconductor substrate 1 which is
perpendicular to the substrate 1.
[0068] In FIG. 3, the trench 6positioned on the outmost periphery
(on the left side) does not act as the power MISFET, and a lead-out
part 9b for the dummy gate electrode is formed in the trench via
the insulating film 7. A lead-out part 11b for the gate electrode
is formed over the lead-out part 9b for the dummy gate electrode
via the gate insulating film 10. The lead-out part 9b for the dummy
gate electrode is electrically connected to the dummy gate
electrode 9a, and the lead-out part 11b for the gate electrode is
electrically connected to the gate electrode 11a.
[0069] Over the main surface of the semiconductor substrate 1, is
formed an interlayer dielectric 16, from which a contact hole
(second contact hole) 17 reaching the lead-out part 11b for the
gate electrode is formed. Similarly, a contact hole 18 reaching the
semiconductor region 13 for channel formation is formed from the
interlayer dielectric 16. The contact hole 18 is in contact with
the source region 14. Note that, although not shown in FIG. 3,
another contact hole (first contact hole) reaching the lead-out
part 9b for the dummy gate electrode from the interlayer dielectric
16 is formed without being in contact with the lead-out part 11b
for the gate electrode.
[0070] The gate interconnection 25 is formed so as to embed the
contact hole 17 reaching the lead-out part 11b for the gate
electrode from the interlayer dielectric 16. That is, the lead-out
part 11b for the gate electrode is electrically connected to the
gate interconnection 25. Similarly, the source electrode 24 is
formed so as to embed the contact hole 18 reaching the
semiconductor region 13 for the channel formation from the
interlayer dielectric 16. The source electrode 24 and the gate
interconnection 25 are made of a laminate consisting of a barrier
metal film and a metal film. The barrier metal film is made of, for
example, a titanium tungsten (TiW) film 22. The metal film is made
of, for example, an aluminum film 23, or an aluminum alloy
film.
[0071] The source electrode 24 is brought into contact with the
source region 14 through the side of the contact hole 18 reaching
the semiconductor region 13 for the channel formation. This allows
the source electrode 24 to be electrically connected to the source
region 14. On the bottom of the contact hole 18, a p-type
semiconductor region 20 is formed, through which the source
electrode 24 is electrically connected to the semiconductor region
13 for the channel formation.
[0072] A polyimide resin film 27 is formed as the passivation film
over the main surface of the semiconductor substrate 1 with the
source electrode 24 and the gate interconnection 25 formed thereon.
The polyimide resin film 27 positioned on the source pad which is a
part of the source electrode 24 is removed, which causes the source
pad to be exposed to the outside. A drain electrode 29 is formed on
a back surface opposite to the main surface of the semiconductor
substrate 1, and is a laminate consisting of, for example, a
titanium (Ti) film 28a, a nickel (Ni) film 28b, and a gold (Au)
film 28c.
[0073] The power MISFET of the embodiment is provided with the
dummy gate electrode 9a, the function of which will be described
hereinafter in detail.
[0074] In the known power MISFET without the dummy gate electrode
9a, when a voltage is applied to the drain region with the gate
electrode and the source region being grounded, the electric field
becomes strongest at the bottom of the trench in which the gate
electrode is formed. Thus, a withstand voltage (BVdss) of the power
MISFET is determined based on a voltage which causes avalanche
breakdown in the vicinity of the bottom of the trench. Since there
exists only a relatively thin gate insulating film at the bottom of
the trench, the electric field intends to become strong between the
gate and the drain.
[0075] In contrast, although in the power MISFET provided with the
dummy gate electrode 9a such as that shown in FIG. 3, the electric
field intends to become strongest at the bottom of the trench 6 of
the dummy gate electrode 9a, the presence of the insulating film 7
which is thicker than the gate insulating film 10 is likely to
release the electric filed between the dummy gate electrode 9a and
the drain region. This power MISFET can improve the withstand
voltage (BVdss) as compared with the power MISFET not provided with
the dummy gate electrode 9a.
[0076] Furthermore, the provision of the dummy gate electrode 9a
has the following advantages. Generally, in the power MISFET, the
gate insulating film is thinned thereby to improve the performance
thereof. However, the power MISFET without the dummy gate electrode
9a has a disadvantage that the gate insulating film cannot be
thinned so much. That is, although in the power MISFET not provided
with the dummy gate electrode 9a, the gate electrode is formed
inside the trench via the gate insulating film, there exists a weak
spot at the corner of the trench where the defective formation of
the gate insulating film intends to occur. This makes it impossible
to thin the gate insulating film.
[0077] In contrast, in the power MISFET provided with the dummy
gate electrode 9a, the dummy gate electrode 9a is formed via the
insulating film 7 in the lower part of the trench 6, while the gate
electrode 11a is formed via the gate insulating film 10 in the
upper part of the trench 6. Thus, at the corner of the bottom part
of the trench 6, not the gate insulating film 10, but the
insulating film 7 is formed. This insulating film 7 is thicker than
the gate insulating film 10 in order to improve the withstand
voltage (BVdss). Thus, even if the gate insulating film 10 is
thinned, the corner of the bottom of the trench does not become a
weak spot. As mentioned above, the power MISFET provided with the
dummy gate electrode 9a has the advantage that the thinning of the
gate insulating film can improve the performance of the MISFET.
[0078] The thinning of the gate insulating film 10 may lead to
reduction in electrostatic breakdown resistance of the gate
insulating film 10. However, in the embodiment, the power MISFET
provided with the dummy gate electrode 9a and the protective diode
connected to this MISFET are formed on the same semiconductor
substrate 1. This achieves the thinning of the gate insulating film
10, while ensuring the electrostatic breakdown resistance of the
gate insulating film 10.
[0079] FIG. 4 is a section view taken along a line B-B of FIG. 2.
As shown in FIG. 4, the power MISFET with the dummy gate electrode
9a and the protective diode are formed over the main surface of the
semiconductor substrate 1. The protective diode is made of the pn
junction occurring between the p.sup.--type semiconductor region 8a
and the n.sup.+-type semiconductor region 15. In FIG. 4, the
p.sup.--type semiconductor regions 8a and the n.sup.+-type
semiconductor regions 15 are formed alternately between the gate
interconnection 25 (electrically connected to the gate electrode
11a) and the source electrode 24, which forms the four protective
diodes. These four protective diodes are arranged in two sets of
pairs positioned in series, each pair of diodes being connected
together so as to be oriented in different directions from each
other.
[0080] This electric connection of the protective diode between the
gate interconnection 25 and the source electrode 24 can protect the
gate insulating film 10 from the electrostatic breakdown, which
will be described hereinafter in more detail. For example, suppose
a surge voltage that exceeds the electrostatic breakdown resistance
level of the gate insulating film 10 is applied between the gate
interconnection 25 and the source electrode 24. At this time, if
there is no protective diode between the gate interconnection 25
and the source electrode 24, the surge voltage exceeding the
electrostatic breakdown resistance may be applied to the gate
insulating film 10. As a result, the gate insulating film 10 may be
broken.
[0081] In contrast, when the protective diode is connected between
the gate interconnection 25 and the source electrode 24, for
example, the surge voltage causes a reverse bias voltage to be
applied to the protective diode. When the reverse bias voltage
caused by the surge voltage exceeds the breakdown voltage, a
breakdown current passes through the protective diode. At this
time, the protective diode is subjected to the breakdown voltage,
which is constant. That is, even when the surge voltage that
exceeds the breakdown voltage is applied to the protective diode, a
voltage which has an influence on the protective diode is the
constant breakdown voltage. Thus, the breakdown voltage placed on
the protective diode is also applied to the gate insulating film
10. That is, providing the protective diode causes only the
breakdown voltage by the protective diode to be applied to the gate
insulating film 10, even when the surge voltage exceeding the
dielectric breakdown resistance is applied between the gate
interconnection 25 of the power MISFET and the source electrode 24.
When the breakdown voltage by the protective diode is designed to
be set at or below a predetermined value, the gate insulating film
10 can be protected from the application of the voltage exceeding
the dielectric breakdown resistance level.
[0082] In the present embodiment, the two sets of pairs of
protective diodes which are connected so as to be oriented in
different directions from each other are provided. This formation
of the protective diodes connected to be oriented in different
directions from each other is based on the consideration that the
surge voltages the polarities of which are different from each
other may be applied. That is, even when the surge voltages the
polarities of which are different from each other are applied
independently between the gate interconnection 25 of the power
MISFET and the source electrode 24, the protective diode can act
normally. A pair of protective diodes which are connected so as to
be oriented in the different direction may have a structure, for
example, in which anode electrodes are connected to each other, one
cathode electrode is connected to the gate interconnection 25, and
the other cathode electrode is connected to the source electrode
24. Conversely, a pair of protective diodes may have a structure in
which cathode electrodes are connected to each other, one anode
electrode is connected to the gate interconnection 25, and the
other anode electrode is connected to the source electrode 24.
[0083] It should be noted that when the power MISFET is intended to
be protected only from the surge voltage of a specific polarity
(for example, a voltage which causes a positive voltage to be
applied to the gate interconnection 25 with respect to the source
electrode), the pair of protective diodes oriented in the different
direction does not need to be provided, and only one protective
diode may be provided. In this case, the cathode electrode of the
protective diode is connected to the gate interconnection 25, while
the anode electrode thereof is connected to the source electrode
24. Note that, conversely, the cathode electrode of the diode may
be connected to the source electrode 24, and the anode electrode
thereof connected to the gate interconnection 25.
[0084] Although in the embodiment, the two sets of pairs of
protective diodes connected to be oriented in the different
directions are formed, the invention is not limited thereto. This
is considered as exemplary only, and contemplated from the
viewpoint that an operating voltage of the protective diode is
adjusted to a predetermined value. Therefore, only one set of a
pair of protective diodes may be used, or a number of, for example,
three or more sets of pairs of protective diodes may be
provided.
[0085] Now, an example of a circuit constructed using the power
MISFET of the embodiment will be described in detail. FIG. 5
illustrates an example of a motor control circuit constructed using
the power MISFET of the embodiment. The motor control circuit is
used as, for example, a circuit for controlling a motor of a power
window device mounted on a vehicle.
[0086] Referring to FIG. 5, the motor control circuit includes a
gate drive circuit 30, a motor 31, power MISFETs 32 to 35, a direct
current power supply 36, and protective diodes 37 to 40. In the
motor control circuit, gate electrodes of the power MISFETs 32 to
35 are respectively connected to the gate drive circuit 30. Drain
electrodes of the power MISFETs 32 and 34 are connected in parallel
to a positive electrode of the direct current power supply 36. A
source electrode of the power MISFET 32 is connected to a drain
electrode of the power MISFET 33, and a source electrode of the
power MISFET 34 is connected to a drain electrode of the power
MISFET 35. A source electrode of the power MISFET 33 and a source
electrode of the power MISFET 35 are connected to a negative
electrode of the direct current power supply 36. The motor 31 is
connected between a connecting part of the power MISFET 32 and the
power MISFET 33, and a connecting part of the power MISFET 34 and
the power MISFET 35. The respective protective diodes 37 to 40 are
electrically connected between the gate electrodes and the source
electrodes of the power MISFETs 32 to 35. As mentioned above, in
the motor control circuit shown in FIG. 5, two sets of pairs of
protective diodes (protective diodes 37 to 40) connected to be
oriented in different directions from each other (back to back) are
connected between the gate electrodes and the source electrodes of
the power MISFETs 32 to 35. The motor control circuit is configured
to have an H bridge (full bridge) of the power MISFETs 32 to 35
with respect to the motor 31.
[0087] The gate drive circuit 30 is configured to allow for the
application of a predetermined voltage to the gate electrodes of
the power MISFETs 32 to 35, and to control on/off of the power
MISFETs 32 to 35. Each of the power MISFETs 32 to 35 is the power
MISFET having the trench gate structure with the dummy gate
electrode as described with reference to FIGS. 2 to 4, which is the
high performance power MISFET including the thinned gate insulating
film. The protective diodes 37 to 40 are formed on the same
semiconductor substrate as the power MISFETs 32 to 35.
[0088] The operation of the motor control circuit according to the
embodiment will be described hereinafter in detail. First, the gate
drive circuit 30 turns on the power MISFET 33 and the power MISFET
34, and turns off the power MISFET 32 and the power MISFET 35.
Thus, the positive electrode of the direct current power supply 36
is connected to a terminal 31a of the motor 31 via the power MISFET
34. On the other hand, the negative electrode of the direct current
power supply 36 is connected to a terminal 31b of the motor 31 via
the power MISFET 33. This rotates the motor 31 in a predetermined
direction. Next, the gate drive circuit 30 turns on the power
MISFET 32 and the power MISFET 35, and turns off the power MISFET
33 and the power MISFET 34. Then, the positive electrode of the
direct current power supply 36 is connected to a terminal 31b of
the motor 31 via the power MISFET 32. On the other hand, the
negative electrode of the direct current power supply 36 is
connected to a terminal 31a of the motor 31 via the power MISFET
35. This rotates the motor 31 in a reverse direction from the
above-mentioned direction because the motor is connected reversely
with respect to the connecting condition mentioned above. According
to the motor control circuit of the embodiment, the rotating
direction of the motor 31 can be controlled.
[0089] Suppose a surge voltage which is higher than the breakdown
voltage of the protective diode 37 is applied to, for example,
between the gate electrode of the power MISFET 32 and the source
electrode thereof. At this time, the protective diode 37 is
connected between the gate electrode of the power MISFET 32 and the
source electrode thereof. The surge voltage, which is higher than
the breakdown voltage of the protective diode 37, causes a current
to pass through the protective diode 37 in a reverse direction.
When the current passes through the protective diode 37 in the
reverse direction, a voltage to be applied to both terminals of the
protective diode 37 is the constant breakdown voltage. The
breakdown voltage which is lower than the surge voltage is applied
to the gate insulating film of the power MISFET 32. Thus, even if
the surge voltage which may cause dielectric breakdown of the gate
insulating film is applied, the breakdown voltage which may not
cause the dielectric breakdown is applied to the gate insulating
film because of a protection function of the protective diode 37.
This can prevent the breakdown of the power MISFET 32.
[0090] Now, a manufacturing method of a semiconductor device
according to the embodiment will be described in detail with
reference to the accompanying drawings. In the semiconductor device
of the embodiment, the power MISFET having the trench gate
structure with the dummy gate electrode and the protective diode
are formed on the same semiconductor substrate. In manufacturing
such a semiconductor device using a normal technique, the
polycrystalline silicon film for the dummy gate electrode, the
polycrystalline silicon film for the gate electrode, and the
polycrystalline silicon film for the protective diode need to be
manufactured in different respective steps, and the respective
polycrystalline silicon films should be processed independently. In
order to mount the protective diode on the semiconductor device,
the processing step becomes very complicated, and the number of
manufacturing steps is increased as compared with the case of
manufacturing only the power MISFET having the trench gate
structure with the dummy gate electrode.
[0091] The present embodiment of the invention can achieve
simplification of the processing steps by employing the following
method for manufacturing the semiconductor device.
[0092] In the sectional views as mentioned below, an area on the
left side designates the power MISFET forming region, while an area
on the right side designates a protective diode forming region.
[0093] First, as shown in FIG. 6, the semiconductor substrate 1
made of n.sup.+-type silicon (Si) single crystals having low
resistance is prepared on which the n-type epitaxial layer 2 made
of n-type silicon single crystals having high resistance is formed.
Subsequently, the p-type well 3 is formed in the n-type epitaxial
layer 2, using a photolithography technique and an ion implantation
method. The p-type well 3 is formed by introducing p-type
impurities, such as boron (B), using the ion implantation method.
This p-type well 3 is formed so as to form the pn junction having a
high withstand voltage. Then; using selective oxidation (LOCOS
method), for example, the element isolation region 4 made of, for
example, a silicon oxide film, is formed. In the protective diode
forming region, the p-type well 3 is covered with the element
isolation region 4.
[0094] Subsequently, the insulating film 5 made of, for example, a
silicon oxide film, is formed over the main surface of the
semiconductor substrate 1. Although in the embodiment, the silicon
oxide film is used, other materials, such as a silicon nitride film
(Si.sub.3N.sub.4), may be used. Thereafter, a resist pattern is
formed on the insulating film 5, using a series of photolithography
steps, which involves applying a photoresist film (hereinafter
referred to as a simple "resist film"), exposing, and developing.
By etching the insulating film 5 using the resist pattern as an
etching mask, and removing the resist pattern, the insulating film
5 for formation of the trenches is subjected to patterning. The
pattern of the insulating film 5 has a function of serving as a
hard mask film for formation of the trenches. In the protective
diode forming region, the element isolation region 4 is covered
with the insulating film 5.
[0095] Then, as shown in FIG. 7, the semiconductor substrate 1 is
etched by anisotropic etching using the pattern of the insulating
film 5 as an etching mask to form the trenches 6. The trenches 6
are formed in the power MISFET forming region, but not formed in
the protective diode.
[0096] FIG. 8 is a plan view of the semiconductor substrate 1
subjected to the above-mentioned processes. FIG. 8 illustrates a
chip region CR of the semiconductor substrate 1. In FIG. 8, an area
surrounded by the element isolation region 4 is an active area,
where the trenches 6 are formed. The sectional view taken along a
line C-C of FIG. 8 is a sectional view (see FIG. 6 or the like)
showing the power MISFET forming area, whereas the sectional view
taken along a line D-D is a sectional view showing the protective
diode forming area.
[0097] Subsequently, as shown in FIG. 9, the semiconductor
substrate 1 is subjected to a thermal oxidation process to form the
insulating film (first insulating film) 7 made of, for example, a
silicon oxide film, over the main surface (including the inner
surface of the trench 6) of the semiconductor substrate 1. The
thickness of the insulating film 7 is, for example, about 200
nm.
[0098] A polycrystalline silicon film (first polycrystalline
silicon film) 8 is formed over the main surface of the
semiconductor substrate 1. The polycrystalline silicon film 8 is an
intrinsic polycrystalline silicon film into which conductive
impurities are not introduced, which film is formed by, for
example, a chemical vapor deposition (CVD) method. The
polycrystalline silicon film 8 is formed in the power MISFET
forming region as well as in the protective diode forming region.
The polycrystalline silicon film 8 serves as a polycrystalline
silicon film for the dummy gate electrode (first conductive film),
and as a polycrystalline silicon film for the protective diode
(second conductive film), as mentioned later. That is, in the first
embodiment, the polycrystalline silicon film for the dummy gate
electrode and the polycrystalline silicon film for the protective
diode are simultaneously formed as the polycrystalline silicon film
8. This method has an advantage that it can simplify the process as
compared with a case where the polycrystalline silicon film for the
dummy gate electrode and the polycrystalline silicon film for the
protective diode are independently formed in the different
steps.
[0099] Then, as shown in FIG. 10, p-type impurities, such as boron
(B), are introduced into the polycrystalline silicon film 8 formed
over the semiconductor substrate 1 using the ion implantation
method to form a p.sup.--type semiconductor region 8a. Thereafter,
as shown in FIG. 11, a high concentration of n-type impurities is
introduced into the p.sup.--type semiconductor region 8a of the
power MISFET using the photolithography technique and the ion
implantation method to form an n.sup.+-type semiconductor region
8b. The n-type impurities include, for example, phosphorus (P),
arsenic (As), and antimony (Sb). Subsequently, heat treatment
(annealing process) is applied to the semiconductor substrate 1 at
a temperature of, for example, 1100 degrees (.degree. C.) or more.
This heat treatment is carried out so as to increase a grain size
(crystal grain size) of the polycrystalline silicon film 8
constituting the p.sup.--type semiconductor region 8a and the
n.sup.+-type semiconductor region 8b. As mentioned later, because
the grain size of the p.sup.--type semiconductor region 8a, which
is a part of the protective diode, is increased, the p.sup.--type
semiconductor region 8a can decrease a leakage current from the
protective diode. This is because the grain size of the
semiconductor region 8a is increased by high-temperature heat
treatment, which leads to reduction in grain boundary across the pn
junction of the protective diode (a boundary of the crystal grain).
That is, since the grain boundary which may be the path of the
leakage current, is reduced, the leakage current of the protective
diode can be decreased. This high-temperature heat treatment is
desirably carried out before forming the semiconductor region for
the channel formation, as mentioned later. If the high-temperature
heat treatment were carried out after forming the semiconductor
region for the channel formation, the semiconductor region for the
channel formation would be diffused, thus failing to achieve
shallow junction of the channel part, which might be at a
disadvantage in enhancing the performance of the power MISFET.
[0100] Then, as shown in FIG. 12, the polycrystalline silicon film
8 including the n.sup.+-type semiconductor region 8b is subjected
to patterning using the photolithography technique and the etching
technique. Thus, the polycrystalline silicon film 8 formed in the
trench 6 is etched up to a mid-point of the depth thereof to form
the dummy gate electrode 9a in the trench 6. The lead-out part 9b
for the dummy gate electrode is formed on the semiconductor
substrate 1 by patterning. The lead-out part 8b for the dummy gate
electrode 9b is formed so as to be electrically connected to the
dummy gate electrode 9a. At this time, the grain size of the
polycrystalline silicon film 8 including the n.sup.+-type
semiconductor region 8b is increased by the above-mentioned heat
treatment. This can effectively prevent the defective formation of
the dummy gate electrode 9a.
[0101] Then, as shown in FIG. 13, the insulating film 7 is
subjected to patterning by the photolithography and etching
techniques. FIG. 14 illustrates a plan view of the chip region CR
subjected to the above-mentioned steps. In FIG. 14, in the
protective diode forming region, the p.sup.--type semiconductor
region (anode region) 8a is formed, while, in the outer periphery
of the power MISFET forming region, the lead-out part 9b for the
dummy gate electrode is formed.
[0102] Subsequently, as shown in FIG. 15, the gate insulating film
10 is formed over the main surface of the semiconductor substrate 1
as well as on the sides of the trench 6. The gate insulating film
10 is made of a silicon oxide film formed by, for example, the
thermal oxidation process, and is formed so as to be thinner than
that of the insulating film 7. This is needed for improvement of a
current drive capability of the power MISFET, and for decrease in
the on-state resistance. The thickness of the gate insulating film
10 is, for example, about 50 nm.
[0103] The polycrystalline silicon film (second polycrystalline
silicon film) is formed over the semiconductor substrate 1 as well
as on the gate insulating film 10. This polycrystalline silicon
film is formed by, for example, the CVD method, with the n-type
impurities added thereinto. That is, in forming the polycrystalline
silicon film, for example, then-type impurities, such as phosphorus
or arsenic, are introduced into the polycrystalline silicon film.
Thereafter, using the photolithography and etching techniques, the
polycrystalline silicon film is subjected to patterning to form the
gate electrode 11a in the trench 6. The gate electrode 11a has a
recessed structure lower than the top part on the main surface side
of the semiconductor substrate 1. By the application of patterning
to the polycrystalline silicon film, the lead-out part 11b for the
gate electrode is formed. The lead-out part 11b for the gate
electrode is electrically connected to the gate electrode 11a.
[0104] The concentration of the n-type impurities introduced into
the gate electrode 11a is higher than that of the n-type impurities
introduced into the dummy gate electrode 9a. In other words, the
resistance of the gate electrode 11a is low as compared with that
of the dummy gate electrode 9a. This is because the higher
resistance of the gate electrode 11a makes it difficult for the
power MISFETs connected in parallel to act uniformly. That is, if
the power MISFETs do not operate uniformly, the electrostatic
breakdown resistance of the gate insulating film, and the avalanche
resistance maybe decreased, and the switching speed may become slow
disadvantageously. Note that when the power MOS is turned off with
the dielectric load being connected, a voltage consisting of the
sum of a power supply voltage and an induced electromotive force is
instantaneously applied between the source region and the drain
region. When this voltage exceeds the withstand voltage, the device
becomes the avalanche breakdown condition. The avalanche resistance
means the product of the maximum value of the avalanche current
passing through without causing the breakdown, and the time (that
is, the avalanche energy) at this time. To prevent such
inconveniences, it is necessary to decrease the resistance of the
gate electrode 11a. For this reason, in formation of the gate
electrode 11a, the polycrystalline silicon film into which
impurities, such as phosphorous or arsenic, are previously added,
is used. The polycrystalline silicon film into which the impurities
are previously added can achieve reduction in resistance of the
polycrystalline silicon film, as compared with the polycrystalline
silicon film which is formed with out addition of the impurities,
and then has the impurities introduced by the ion implantation. For
example, the polycrystalline silicon film of 500 nm in thickness to
which the impurities are previously added can decrease the sheet
resistance to about 10.OMEGA./.quadrature.. In contrast, the
polycrystalline silicon film of 500 nm in thickness into which the
impurities are introduced by the ion implantation method cannot
decrease the sheet resistance only up to about
20.OMEGA./.quadrature.. Therefore, the polycrystalline silicon film
into which the impurities are previously added is used to form the
gate electrode 11a.
[0105] On the other hand, the dummy gate electrode 9a, which is
different from the gate electrode 11a of the power MISFET, does not
make it difficult for the power MISFETs connected in parallel to
act uniformly even if it has a higher resistance than that of the
gate electrode 11a. Moreover, since the dummy gate electrode 9a is
covered with the insulating film 7 whose thickness is greater than
that of the gate insulating film 10, the dummy gate electrode 9a is
likely to ensure the electrostatic breakdown resistance even if the
resistance of the dummy gate electrode is higher than that of the
gate electrode 11a. Therefore, the dummy gate electrode 9a can be
the polycrystalline silicon film which is made by forming an
intrinsic polycrystalline silicon film without addition of
impurities, and introducing the impurities into the intrinsic
polycrystalline silicon film using the ion implantation method. It
should be noted that the dummy gate electrode 9a can be made of the
polycrystalline silicon film into which the impurities are
previously added. In the present embodiment, however, since the
polycrystalline silicon film for the protective diode and the
polycrystalline silicon film for the dummy gate electrode 9a are
simultaneously formed, the polycrystalline silicon film into which
the impurities are previously added cannot be used for the
formation of the dummy gate electrode 9a. That is, in the
polycrystalline silicon film into which the impurities are
previously added, the concentration of the impurities introduced is
high, and thus the polycrystalline silicon film cannot be used to
form the protective diode. Thus, the polycrystalline silicon film
of the protective diode cannot be formed at the same time when the
gate electrode 11a is formed using the polycrystalline silicon film
with the impurities previously added thereto. In contrast, since
the intrinsic polycrystalline silicon film can be used in the
formation of the dummy gate electrode 9a, the polycrystalline
silicon film of the protective diode can be formed at the same time
as that of forming the polycrystalline silicon film of the dummy
gate electrode. For this reason, in the embodiment, the
polycrystalline silicon film for the dummy gate electrode 9a and
the polycrystalline silicon film for the protective diode are
simultaneously formed.
[0106] Then, after forming an insulating film (not shown) made of,
for example, a silicon oxide film, on the semiconductor substrate
1, a sidewall 12 is formed on an upper part of the trench 6 by the
anisotropic etching as shown in FIG. 16. The sidewall 12 is formed
so as to protect the corner of the trench 6 positioned at the upper
part thereof. Note that this sidewall may not be formed.
[0107] FIG. 17 is a plan view of the chip region CR subjected to
the foregoing steps. As shown in FIG. 17, in the protective diode
forming region, the p.sup.--type semiconductor region 8a is formed,
and in the outer periphery of the power MISFET forming region, the
lead-out part 9b for the dummy gate electrode is formed. The
lead-out part 11b for the gate electrode is formed over the
lead-out part 9b for the dummy gate electrode.
[0108] Then, a resist pattern is formed over the main surface of
the semiconductor substrate 1 using the photolithography technology
such that the channel forming region is exposed outward. P-type
impurities, such as boron (B), are introduced towards the main
surface of the semiconductor substrate 1 using the resist pattern
formed as a mask by the ion implantation method. Subsequently,
after removing the resist pattern, the semiconductor substrate 1 is
subjected to a thermal diffusion process to form the semiconductor
region 13 for the channel formation such as that shown in FIG.
18.
[0109] Then, another resist pattern is formed over the main surface
of the semiconductor substrate 1 using the photolithography
technology such that the source forming region and the cathode
forming region of the protective diode are exposed. N-type
impurities, such as phosphorous or arsenic, are introduced over the
main surface of the semiconductor substrate 1 using the resist
pattern formed as a mask by the ion implantation method.
Subsequently, after removing the resist pattern formed, the
semiconductor substrate 1 is subjected to the thermal diffusion
process to form the source region 14 and the n.sup.+-type
semiconductor region (cathode region) 15 of the protective diode
such as those shown in FIG. 19. Thus, in the embodiment, the source
region 14 of the power MISFET and the n.sup.+-type semiconductor
region 15 of the protective diode can be formed simultaneously,
which can achieve simplification of the manufacturing steps.
[0110] FIG. 20 is a plan view of the chip region CR subjected to
the above-mentioned steps. As shown in FIG. 20, in the protective
diode forming region, the p.sup.--type semiconductor region 8a and
the n.sup.+-type semiconductor region 15 are formed to create the
protective diode having the pn junction. As shown in the figure, in
the power MISFET forming region, the source region 14 is
formed.
[0111] Another reason why the polycrystalline silicon film for the
gate electrode 11a and the polycrystalline silicon film for the
protective diode are not formed simultaneously, and the
polycrystalline silicon film for the dummy gate electrode 9a and
the polycrystalline silicon film for the protective diode are
formed at the same time will be described below.
[0112] As shown in FIG. 19, the dummy gate electrode 9a is filled
in the narrow trench sandwiched between the thick insulating films
7, whereas the gate electrode la of the power MISFET needs to be
filled in the wide trench sandwiched between the thin gate
insulating films 10. That is, although the dummy gate electrode 9a
and the gate electrode 11a are formed in the same trench 6, the
thick insulating film 7 is formed between the dummy gate electrode
9a and the trench 6. This narrows a region in which the dummy gate
electrode 9a is filled, by a length of the thick insulating film 7
formed. In contrast, since the thin gate insulating film 10 is
formed between the gate electrode 11a and the trench 6, the region
in which the gate electrode la is filled is wider than that in
which the dummy gate electrode 9a is filled. Thus, even if the
thickness of the polycrystalline silicon film forming the dummy
gate electrode 9a is smaller than that of the polycrystalline
silicon film forming the gate electrode 11a, the trench 6 can be
filled with. That is, the thickness of the lead-out part 9b for the
dummy gate electrode is smaller than that of the lead-out part 11b
for the gate electrode.
[0113] More specifically, when the width of the trench 6 is 0.8
.mu.m, the thickness of the insulating film 7 is 200 nm, and the
thickness of the gate insulating film 10 is 50 nm, at least the
polycrystalline silicon film for the dummy gate electrode 9a may be
deposited to a thickness of 200 nm or more so that the dummy gate
electrode 9a can be filled in the trench region having the width of
0.4 .mu.m. In contrast, the polycrystalline silicon film for the
gate electrode 11a needs to be deposited to a thickness of 350 nm
or more so that the gate electrode 11a is required to be filled in
the trench region having a width of 0.7 .mu.m.
[0114] In forming the protective diode having the
n.sup.+p.sup.-junction, the p.sup.--type semiconductor region 8a is
formed by forming the intrinsic polycrystalline silicon film, and
then implanting the boron ions into the entire surface of the
intrinsic polycrystalline silicon film in a dose amount of about
1.times.10.sup.13/cm.sup.2 to 1.times.10.sup.14/cm.sup.2. In
contrast, the n.sup.+-type semiconductor region 15 needs to be
selectively formed. The n.sup.+-type semiconductor region 15 of the
protective diode is formed at the same ion implantation step in
which the source region of the power MISFET is selectively formed
(at the step of introducing arsenic in an amount of about
1.times.10.sup.15/cm.sup.2 to 1.times.10.sup.16/cm.sup.2). This can
form the protective diode without increasing the number of
steps.
[0115] Now, the junction depth of the source region becomes a major
concern. In order to enhance the performance of the power MISFET,
the shallow junction of the source region and the channel region is
very important. For the shallow junction of the source region, the
n.sup.+-type semiconductor region 15 of the protective diode
simultaneously formed has the junction in the shallow depth. Thus,
if the n.sup.+-type semiconductor region 15 of the protective diode
is formed on the thick polycrystalline silicon film, the
n.sup.+-type semiconductor region 15 does not reach the bottom
surface of the polycrystalline silicon film readily. When the
n.sup.+-type semiconductor region 15 does not reach the bottom
surface of the polycrystalline silicon film, a large amount of
leakage current passes through in the
n.sup.+p.sup.-n.sup.+p.sup.-n.sup.+type bidirectional diode. In
contrast, if the n.sup.+-type semiconductor region 15 of the
protective diode is formed on the thin polycrystalline silicon
film, even the thin n.sup.+-type semiconductor region 15 can
readily reach the bottom surface of the polycrystalline silicon
film, thereby enabling the formation of the protective diode from
which the leakage current is little.
[0116] As mentioned above, even the formation of the thin
polycrystalline silicon film of the protective diode using the
polycrystalline silicon film for the dummy gate electrode capable
of being filled in the trench 6 can readily form the n.sup.+-type
semiconductor region 15 of the protective diode simultaneously at
the step of forming the source region of the power MISFET, which
has an advantage in reduction in the number of steps. Particularly,
this effect is large when the junction at the source region is
shallow to achieve the high performance of the power MISFET.
[0117] Then, as shown in FIG. 21, the interlayer dielectric 16 made
of, for example, a silicon oxide film, is formed over the main
surface of the semiconductor substrate 1. Thereafter, a resist
pattern is formed on the interlayer dielectric 16 by the
photolithography technique such that a contact hole forming region
is exposed. Subsequently, the interlayer dielectric 16 is etched
using the resist pattern formed as an etching mask, and the resist
pattern is removed thereby to form the contact holes 17, 18, and 19
in the interlayer dielectric 16. The contact hole 17 reaches the
lead-out part 11b for the gate electrode, and the contact hole 18
reaches the semiconductor region 13 for the channel formation
formed over the main surface of the semiconductor substrate 1. The
contact hole 19 is formed in the protective diode forming region,
and reaches the n.sup.+-type semiconductor region 15, which is a
cathode region of the protective diode.
[0118] Then, a part of the semiconductor region 13 for the channel
formation exposed to the bottom surface of the contact hole 18 is
etched to form the trench. Thereafter, p-type impurities, such as
boron, are introduced into the bottom of the trench by the ion
implantation method to form the p-type semiconductor region 20.
[0119] FIG. 22 is a plan view of the chip region CR subjected to
the above-mentioned steps. As shown in FIG. 22, the contact hole 17
is formed in the lead-out part 11b for the gate electrode, and the
contact hole 18 is formed in the active region. The contact hole 19
is formed in the n+-type semiconductor region 15 of the protective
diode, and the contact hole 21 is formed in the lead-out part 9b
for the dummy gate electrode.
[0120] Subsequently, after the titanium tungstern (TiW) film 22
serving as the barrier metal film is formed over the main surface
of the semiconductor substrate 1, the aluminum film 23 is formed on
the titanium tungstern film 22 using, for example, a sputtering
method. The titanium tungstern film 22 and the aluminum film 23 are
subjected to patterning by the photolithography and etching
techniques. This patterning forms the source electrode 24
consisting of the titanium tungstern film 22 and the aluminum film
23, the gate interconnection 25, and the electrode 26.
[0121] The source electrode 24 is formed to fill the contact hole
18, and to be connected to the source region 14 and the p-type
semiconductor region 20. The gate interconnection 25 is connected
to the lead-out part 11b for the gate electrode via the contact
hole 17. This lead-out part 11b for the gate electrode is connected
to the gate electrode 11a, and thus the gate interconnection 25 is
electrically connected to the gate electrode 11a. In the protective
diode forming region is formed the electrode 26, which is connected
to the n.sup.+-type semiconductor region 15 via the contact hole
19. One of the electrodes 26 is connected to the source electrode
24, and the other of the electrodes 26 is connected to the gate
interconnection 25. This arrangement of the electrodes 26 connects
the protective diode between the source electrode 24 and the gate
interconnection 25.
[0122] Then, the polyimide resin film (not shown) serving as a
passivation film is formed over the main surface of the
semiconductor substrate 1. Thereafter, the polyimide resin film is
subjected to patterning using the photolithography technique. The
patterning is carried out such that a part of the source electrode
24 and a part of the gate interconnection 25 are exposed, to form
the source pad and the gate pad.
[0123] After the back surface of the semiconductor substrate 1 is
ground, a laminate consisting of a titanium film (not shown), a
nickel film (not shown), and a gold film (not shown) is formed on
the entire back surface of the substrate 1 using the spattering
method, for example. Thus, the drain electrode made of the
laminate, which consists of the titanium film, the nickel film, and
the gold film, is formed.
[0124] By the above-mentioned steps, the semiconductor device of
the embodiment can be manufactured. According to the embodiment,
the power MISFET having the trench gate structure with the dummy
gate electrode, and the protective diode are formed on the same
semiconductor substrate, thereby preventing the electrostatic
breakdown of the gate insulating film, while improving the
performance of the MISFET.
[0125] The polycrystalline silicon film for the protective diode,
included in the diode, and the polycrystalline silicon film for the
dummy electrode constituting the dummy gate electrode are formed in
the same step. Furthermore, the cathode of the protective diode and
the source region of the power MISFET having the trench gate
structure with the dummy gate electrode are formed in the same
step. This can reduce the complexity of the processing steps, and
thus easily manufacture the power MISFET having the trench gate
structure with the dummy gate electrode, and the protective
diode.
[0126] FIG. 24 illustrates an example of a layout structure of the
semiconductor device according to the embodiment. As shown in FIG.
24, the layout structure includes the dummy gate electrode and the
gate electrode which are electrically connected to each other. In
FIG. 24, the contact hole (second contact hole) 17 connected to the
lead-out part for the gate electrode and the contact hole (first
contact hole) 21 connected to the lead-out part for the dummy gate
electrode are arranged linearly. On the contact hole 17 and the
contact hole 21, which are arranged linearly, the linear gate
interconnection 25 is formed. With this arrangement, the dummy gate
electrode and the gate electrode can be connected to each other at
the same potential. Furthermore, arranging the contact hole 17 and
the contact hole 21 linearly can increase an effective area of the
semiconductor chip CP (area of a cell forming region/the entire
area of the chip). Note that in FIG. 24, a part of the gate
interconnection 25 is omitted so that the contact hole 17 and the
contact hole 21 which are positioned under the gate interconnection
25 can be viewed.
[0127] Although the contact holes 17 and the contact holes 21 are
alternately formed as shown in FIG. 24, they do not necessarily
need to be arranged alternately. For example, when the resistance
of the gate electrode intends to be decreased, the rate of the
contact holes 17 may desirably be increased.
[0128] FIG. 25 illustrates a layout structure in which the dummy
gate electrode is connected to the source electrode 24, and the
gate electrode is connected to the gate interconnection 25.
Connection of the dummy gate electrode with the source electrode 24
can decrease the parasitic capacitance (feedback capacitance)
between the gate electrode and the drain region, thereby achieving
the high speed switching. That is, although the parasitic
capacitance occurs between the gate electrode and the drain region,
connecting the dummy gate electrode formed between the gate
electrode and the drain region to the source potential can provide
the shield effect. This shield effect can decrease the parasitic
capacitance.
[0129] Referring to FIG. 25, the contact holes 17 connected to the
lead-out part for the gate electrode and the contact holes 21
connected to the lead-out part for the dummy gate electrode are
arranged linearly. The contact hole 17 is connected to the gate
interconnection 25, while the contact hole 21 is connected to the
source electrode 24. A part of the gate interconnection 25 which is
connected to the contact hole 17 is a convex part 40a. A part of
the source electrode 24 opposite to the convex part 40a is a
recessed part 40b. That is, in a position where the source
electrode 24 on the contact hole 21 is formed in a recessed shape,
the gate interconnection 25 on the contact hole 17 is formed in a
convex shape. In contrast, a part of the source electrode 24 which
is connected to the contact hole 21 is a convex part 41a. A part of
the gate interconnection 25 opposite to the convex part 41a is a
recessed part 41b. That is, in a position where the source
electrode 24 is formed in a convex shape, the gate interconnection
25 is formed in a recessed shape. With this layout arrangement, the
effective area of the semiconductor chip CP can be increased. Note
that in FIG. 25, parts of the source electrode 24 and the gate
interconnection 25 are omitted so that the contact holes 17 and the
contact holes 21 positioned under the gate interconnection 25 can
be viewed.
[0130] Although in FIG. 25, the contact holes 17 and the contact
holes 21 are formed alternately, they do not necessarily need to be
arranged alternately. For example, when the resistance of the gate
electrode is intended to be decreased, the rate of the contact
holes 17 may desirably be increased.
[0131] The invention proposed by the inventors has been described
based on the exemplary embodiments, and thus the invention is not
limited to the embodiments. It should be apparent to those skilled
in the art that various modifications and variations may be made
without departing from the scope of the invention.
[0132] The invention can be widely applied to the manufacturing
industry of semiconductor devices having the power MISFET with the
trench gate structure.
* * * * *