U.S. patent application number 11/354825 was filed with the patent office on 2006-09-14 for wireless chip and electronic appliance having the same.
This patent application is currently assigned to Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Yasuyuki Arai, Yukie Suzuki, Shunpei Yamazaki.
Application Number | 20060202269 11/354825 |
Document ID | / |
Family ID | 36969931 |
Filed Date | 2006-09-14 |
United States Patent
Application |
20060202269 |
Kind Code |
A1 |
Suzuki; Yukie ; et
al. |
September 14, 2006 |
Wireless chip and electronic appliance having the same
Abstract
The present invention provides a wireless chip having high
mechanical strength. Moreover, the present invention also provides
a wireless chip which can prevent an electric wave from being
blocked. In a wireless chip of the present invention, a layer
having a thin film transistor formed over an insulating substrate
is fixed to an antenna by an anisotropic conductive adhesive, and
the thin film transistor is connected to the antenna. The antenna
has a dielectric layer, a first conductive layer, and a second
conductive layer; the first conductive layer and the second
conductive layer has the dielectric layer therebetween; the first
conductive layer serves as a radiating electrode; and the second
electrode serves as a ground contact body.
Inventors: |
Suzuki; Yukie; (Isehara,
JP) ; Arai; Yasuyuki; (Atsugi, JP) ; Yamazaki;
Shunpei; (Setagaya, JP) |
Correspondence
Address: |
ERIC ROBINSON
PMB 955
21010 SOUTHBANK ST.
POTOMAC FALLS
VA
20165
US
|
Assignee: |
Semiconductor Energy Laboratory
Co., Ltd.
Atsugi-shi
JP
|
Family ID: |
36969931 |
Appl. No.: |
11/354825 |
Filed: |
February 16, 2006 |
Current U.S.
Class: |
257/347 ;
257/E21.703; 257/E23.064; 257/E27.111; 257/E27.113; 257/E29.278;
257/E29.293 |
Current CPC
Class: |
H01L 2924/0002 20130101;
H01Q 9/27 20130101; H01L 2924/00 20130101; H01L 23/49855 20130101;
H01L 27/1214 20130101; H01L 2924/0002 20130101; H01L 21/84
20130101; H01L 27/1255 20130101; H01L 29/78675 20130101; H01L 27/13
20130101; H01L 2223/6677 20130101; H01L 29/78621 20130101; H01Q
1/2283 20130101; H01Q 9/0407 20130101 |
Class at
Publication: |
257/347 |
International
Class: |
H01L 27/12 20060101
H01L027/12 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 8, 2005 |
JP |
2005-064271 |
Claims
1. A wireless chip comprising: a layer having a thin film
transistor formed over an insulating substrate; a connection
terminal which is formed on a surface of the layer having the thin
film transistor and which is connected to the thin film transistor;
an antenna having a first conductive layer, a second conductive
layer serving as a ground contact body, and a dielectric layer
sandwiched between the first conductive layer and the second
conductive layer; and a connection layer for electrically
connecting the antenna and the connection terminal.
2. A wireless chip according to claim 1, wherein the layer having
the thin film transistor is formed by stacking plural layers having
thin film transistors.
3. A wireless chip according to claim 1, wherein, over the
insulating substrate, a region where the layer having the thin film
transistor is to be formed is different from a region where the
antenna is to be provided.
4. A wireless chip according to claim 1, wherein the wireless chip
has a high-frequency circuit.
5. A wireless chip according to claim 1, wherein the wireless chip
has a microprocessor.
6. A wireless chip according to claim 1, wherein the wireless chip
has a detection element.
7. A wireless chip according to claim 1, wherein the insulating
substrate is a glass substrate.
8. A wireless chip according to claim 1, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
9. A wireless chip according to claim 1, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
10. An electronic appliance having the wireless chip according to
claim 1.
11. An electronic appliance according to claim 10, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
12. A wireless chip according to claim 1 wherein the connection
layer comprises an organic resin layer having a conductive
particle.
13. A wireless chip according to claim 1 wherein the connection
layer comprises a third conductive layer.
14. A wireless chip comprising: a layer having a thin film
transistor formed over an insulating substrate; a first connection
terminal and a second connection terminal which are formed on a
surface of the layer having the thin film transistor and which are
connected to the thin film transistor; an antenna having a
dielectric layer, a first conductive layer on a first plane of the
dielectric layer, a second conductive layer serving as a ground
contact body on a second plane which opposes to the first plane
through the dielectric layer, and a third conductive layer serving
as a power feeding body formed on the first plane, the second
plane, and a third plane which is in contact with the first plane
and the second plane; and a connection layer for electrically
connecting the first connection terminal and the second conductive
layer, and for electrically connecting the second connection
terminal and the third conductive layer.
15. A wireless chip according to claim 14, wherein the layer having
the thin film transistor is formed by stacking plural layers having
thin film transistors.
16. A wireless chip according to claim 14, wherein, over the
insulating substrate, a region where the layer having the thin film
transistor is to be formed is different from a region where the
antenna is to be provided.
17. A wireless chip according to claim 14, wherein the wireless
chip has a high-frequency circuit.
18. A wireless chip according to claim 14, wherein the wireless
chip has a microprocessor.
19. A wireless chip according to claim 14, wherein the wireless
chip has a detection element.
20. A wireless chip according to claim 14, wherein the insulating
substrate is a glass substrate.
21. A wireless chip according to claim 14, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
22. A wireless chip according to claim 14, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
23. An electronic appliance having the wireless chip according to
claim 14.
24. An electronic appliance according to claim 23, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
25. A wireless chip according to claim 14 wherein the connection
layer comprises an organic resin layer having a conductive
particle.
26. A wireless chip according to claim 14 wherein the connection
layer comprises a fourth conductive layer.
27. A wireless chip comprising: a layer having a thin film
transistor formed over an insulating substrate; a first connection
terminal which is formed on a surface of the layer having the thin
film transistor and which is connected to the thin film transistor;
a layer having one or more passive elements selected from an
inductor, a capacitor, and a resistor; a second connection terminal
formed on a first plane of the layer having the one or more passive
elements; a third connection terminal formed on a second plane
which opposes to the first plane; a first connection layer for
electrically connecting the first connection terminal and the
second connection terminal; an antenna having a first conductive
layer, a second conductive layer serving as a ground contact body,
and a dielectric layer sandwiched between the first conductive
layer and the second conductive layer; and a second connection
layer for electrically connecting the third connection terminal and
the antenna.
28. A wireless chip according to claim 27, wherein the layer having
the thin film transistor is formed by stacking plural layers having
thin film transistors.
29. A wireless chip according to claim 27, wherein, over the
insulating substrate, a region where the layer having the thin film
transistor is to be formed is different from a region where the
antenna is to be provided.
30. A wireless chip according to claim 27, wherein the wireless
chip has a high-frequency circuit.
31. A wireless chip according to claim 27, wherein the wireless
chip has a microprocessor.
32. A wireless chip according to claim 27, wherein the wireless
chip has a detection element.
33. A wireless chip according to claim 27, wherein the insulating
substrate is a glass substrate.
34. A wireless chip according to claim 27, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
35. A wireless chip according to claim 27, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
36. An electronic appliance having the wireless chip according to
claim 27.
37. An electronic appliance according to claim 36, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
38. A wireless chip according to claim 27 wherein the first
connection layer comprises a first organic resin layer having a
first conductive particle, and the second connection layer
comprises a second organic resin layer having a second conductive
particle.
39. A wireless chip according to claim 27 wherein the first
connection layer comprises a third conductive layer, and the second
connection layer comprises a fourth conductive layer.
40. A wireless chip comprising: a first layer having a first thin
film transistor formed over an insulating substrate; a first
connection terminal which is formed on a surface of the first layer
and which is connected to the first thin film transistor; a second
layer having a second thin film transistor; a second connection
terminal formed on a first plane of the second layer; a third
connection terminal formed on a second plane which opposes to the
first plane; a first connection layer for electrically connecting
the first connection terminal and the second connection terminal;
an antenna having a first conductive layer, a second conductive
layer serving as a ground contact body, and a dielectric layer
sandwiched between the first conductive layer and the second
conductive layer; and a second connection layer for electrically
connecting the third connection terminal and the antenna.
41. A wireless chip according to claim 40, wherein, over the
insulating substrate, a region where the first layer and the second
layer are to be formed is different from a region where the antenna
is to be provided.
42. A wireless chip according to claim 40, wherein the first layer,
and the second layer have thicknesses from 1 .mu.m to 10 .mu.m.
43. A wireless chip according to claim 40, wherein the first layer,
and the second layer have thicknesses from 1 .mu.m to 5 .mu.m.
44. A wireless chip according to claim 40, wherein the wireless
chip has a high-frequency circuit.
45. A wireless chip according to claim 40, wherein the wireless
chip has a microprocessor.
46. A wireless chip according to claim 40, wherein the wireless
chip has a detection element.
47. A wireless chip according to claim 40, wherein the insulating
substrate is a glass substrate.
48. A wireless chip according to claim 40, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
49. A wireless chip according to claim 40, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
50. An electronic appliance having the wireless chip according to
claim 40.
51. An electronic appliance according to claim 50, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
52. A wireless chip according to claim 40 wherein the first
connection layer comprises a first organic resin layer having a
first conductive particle, and the second connection layer
comprises a second organic resin layer having a second conductive
particle.
53. A wireless chip according to claim 40 wherein the first
connection layer comprises a third conductive layer, and the second
connection layer comprises a fourth conductive layer.
54. A wireless chip comprising: a first layer having a first thin
film transistor formed over an insulating substrate; a first
connection terminal which is formed on a surface of the first layer
and which is connected to the first thin film transistor; a second
layer having a second thin film transistor; a second connection
terminal formed on a first plane of the second layer; a third
connection terminal formed on a second plane of the second layer
which opposes to the first plane; a first connection layer for
electrically connecting the first connection terminal and the
second connection terminal; a layer having one or more passive
elements selected from an inductor, a capacitor, and a resistor; a
fourth connection terminal formed on a first plane of the layer
having the one or more passive elements; a fifth connection
terminal formed on a second plane of the layer having the one or
more passive elements which opposes to the first plane; a second
connection layer for electrically connecting the third connection
terminal and the fourth connection terminal; an antenna having a
first conductive layer, a second conductive layer serving as a
ground contact body, and a dielectric layer sandwiched between the
first conductive layer and the second conductive layer; and a third
connection layer for electrically connecting the fifth connection
terminal and the antenna.
55. A wireless chip according to claim 54, wherein, over the
insulating substrate, a region where the first layer and the second
layer are to be formed is different from a region where the antenna
is to be provided.
56. A wireless chip according to claim 54, wherein the first layer,
and the second layer have thicknesses from 1 .mu.m to 10 .mu.m.
57. A wireless chip according to claim 54, wherein the first layer,
and the second layer have thicknesses from 1 .mu.m to 5 .mu.m.
58. A wireless chip according to claim 54, wherein the wireless
chip has a high-frequency circuit.
59. A wireless chip according to claim 54, wherein the wireless
chip has a microprocessor.
60. A wireless chip according to claim 54, wherein the wireless
chip has a detection element.
61. A wireless chip according to claim 54, wherein the insulating
substrate is a glass substrate.
62. A wireless chip according to claim 54, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
63. A wireless chip according to claim 54, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
64. An electronic appliance having the wireless chip according to
claim 54.
65. An electronic appliance according to claim 64, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
66. A wireless chip according to claim 54 wherein the first
connection layer comprises a first organic resin layer having a
first conductive particle, and the second connection layer
comprises a second organic resin layer having a second conductive
particle, and the third connection layer comprises a third organic
resin layer having a third conductive particle.
67. A wireless chip according to claim 54 wherein the first
connection layer comprises a third conductive layer, and the second
connection layer comprises a fourth conductive layer, and the third
connection layer comprises a fifth conductive layer.
68. A wireless chip comprising: a layer which is formed over an
insulating substrate and which has a first thin film transistor, a
second thin film transistor, and a first antenna connected to the
first thin film transistor; a connection terminal which is formed
over a surface of the layer having the first thin film transistor,
the second thin film transistor, and the first antenna connected to
the first thin film transistor and which is connected to the second
thin film transistor; a second antenna having a first conductive
layer, a second conductive layer serving as a ground contact body,
and a dielectric layer sandwiched between the first conductive
layer and the second conductive layer; and a connection layer for
electrically connecting the connection terminal and the second
antenna.
69. A wireless chip according to claim 68, wherein the wireless
chip has a high-frequency circuit.
70. A wireless chip according to claim 68, wherein the wireless
chip has a microprocessor.
71. A wireless chip according to claim 68, wherein the wireless
chip has a detection element.
72. A wireless chip according to claim 68, wherein the insulating
substrate is a glass substrate.
73. A wireless chip according to claim 68, wherein the dielectric
layer is formed with one or more selected from alumina, glass,
forsterite, barium titanate, lead titanate, strontium titanate,
lead zirconate, lithium niobate, and lead zirconium titanate.
74. A wireless chip according to claim 68, wherein the dielectric
layer is formed with one or more selected from an epoxy resin, a
phenol resin, a polybutadiene resin, a bismaleimide triazine resin,
vinylbenzyl, and polyfumarate.
75. An electronic appliance having the wireless chip according to
claim 68.
76. An electronic appliance according to claim 75, wherein the
electronic appliance is a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a earphone-equipped goggle, a speaker
device, a headphone, a navigation device, or an electronic key.
77. A wireless chip according to claim 68 wherein the connection
layer comprises an organic resin layer having a conductive
particle.
78. A wireless chip according to claim 68 wherein the connection
layer comprises a third conductive layer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a wireless chip which can
send and receive data through wireless communication and an
electronic appliance having the wireless chip.
[0003] 2. Description of the Related Art
[0004] In recent years, development of a wireless chip including a
plurality of circuits and an antenna has been advanced. Such a
wireless chip is referred to as an ID tag, an IC tag, an IC chip,
an RF (Radio Frequency) tag, a wireless tag, an electronic tag, or
an RFID (Radio Frequency IDentification) tag, and has been already
introduced into some markets.
[0005] Many of these wireless chips which are currently in
practical use have circuits using semiconductor substrates such as
silicon (such circuits are also referred to as IC (Integrated
Circuit) chips) and antennas. The antenna is formed by a printing
method, a method in which a conductive thin film is etched, a
plating method, or the like (see, for example, Patent Document 1:
Japanese Patent Application Laid-Open No. H9-1970).
[0006] The antenna formed by the above method is a thin film or a
thick film. The antenna attached to a flexible material such as
paper or plastic has a problem in that the antenna is sensitive to
bending or folding, so that a part of the antenna is easily
broken.
[0007] Moreover, in the case of a wireless chip formed using a
semiconductor substrate, the semiconductor substrate serves as a
conductor and blocks an electric wave; therefore, there is a
problem in that a signal is easily attenuated depending on a
direction from which a signal is sent.
SUMMARY OF THE INVENTION
[0008] In view of the above problems, it is an object of the
present invention to provide a wireless chip in which mechanical
strength can be increased. Moreover, it is an object of the present
invention to provide a wireless chip which can prevent an electric
wave from being blocked.
[0009] In a wireless chip of the present invention, a layer having
a thin film transistor formed over an insulating substrate is fixed
to an antenna by an anisotropic conductive adhesive or a conductive
layer, and the thin film transistor is connected to the antenna.
Moreover, the layer having the thin film transistor formed over the
insulating substrate, a passive element, and the antenna are fixed
to each other by an anisotropic conductive adhesive or a conductive
layer, and the thin film transistor or the passive element is
connected to the antenna.
[0010] The layer having a thin film transistor may be formed by
stacking a plurality of layers having thin film transistors.
Alternatively, the plurality of layers having thin film transistors
may be fixed to each other by an anisotropic conductive adhesive.
Further, the passive element may be a plurality of passive elements
such as an inductor, a condenser (capacitor), and a resistor.
[0011] The antenna has a dielectric layer, a first conductive
layer, and a second conductive layer, wherein the first conductive
layer and the second conductive layer have the dielectric layer
sandwiched therebetween and wherein the first conductive layer
serves as a radiating electrode and the second conductive layer
serves as a ground contact body. Moreover, the antenna has a power
feeding layer or a power feeding point.
[0012] Further, the present invention includes the following
structures.
[0013] A wireless chip of the present invention includes a layer
having a thin film transistor formed over an insulating substrate;
a connection terminal which is formed on a surface of the layer
having the thin film transistor and which is connected to the thin
film transistor; an antenna having a first conductive layer serving
as a radiating electrode, a second conductive layer serving as a
ground contact body, and a dielectric layer sandwiched between the
first conductive layer and the second conductive layer; and an
organic resin layer having a conductive particle for connecting the
antenna and the connection terminal. Moreover, the wireless chip
may have a third conductive layer, instead of the organic resin
layer having a conductive particle, for connecting the antenna and
the connection terminal.
[0014] A wireless chip of the present invention includes a layer
having a thin film transistor formed over an insulating substrate;
a first connection terminal and a second connection terminal which
are formed on a surface of the layer having the thin film
transistor and which are connected to the thin film transistor; an
antenna having a dielectric layer, a first conductive layer serving
as a radiating electrode on a first plane of the dielectric layer,
a second conductive layer serving as a ground contact body on a
second plane which opposes to the first plane through the
dielectric layer, and a third conductive layer serving as a power
feeding body formed on the first plane, the second plane, and a
third plane which is in contact with the first plane and the second
plane; and an organic resin layer having a conductive particle for
connecting the first connection terminal and the second conductive
layer, and the second connection terminal and the third conductive
layer. The wireless chip may have a fourth conductive layer and a
fifth conductive layer, instead of the organic resin layer having a
conductive particle, for connecting the first connection terminal
and the second conductive layer, and the second connection terminal
and the third conductive layer.
[0015] A wireless chip of the present invention includes a layer
having a thin film transistor formed over an insulating substrate;
a first connection terminal which is formed on a surface of the
layer having the thin film transistor and which is connected to the
thin film transistor; a layer having one or more passive elements
selected from an inductor, a condenser (capacitor), and a resistor;
a second connection terminal formed on a first plane of the layer
having the one or more passive elements; a third connection
terminal formed on a second plane which opposes to the first plane;
a first organic resin layer having a conductive particle for
connecting the first connection terminal and the second connection
terminal; an antenna having a first conductive layer serving as a
radiating electrode, a second conductive layer serving as a ground
contact body, and a dielectric layer sandwiched between the first
conductive layer and the second conductive layer; and a second
organic resin layer having a conductive particle for connecting the
third connection terminal and the antenna. The wireless chip may
have a third conductive layer, instead of the organic resin layer
having a conductive particle, for connecting the antenna and the
third connection terminal.
[0016] The layer having the thin film transistor may be formed by
stacking a plurality of layers having thin film transistors. Over
the insulating substrate, a region where the layer having the thin
film transistor is to be formed may be different from a region
where the antenna is to be provided.
[0017] A wireless chip of the present invention includes a first
layer having a first thin film transistor formed over an insulating
substrate; a first connection terminal which is formed on a surface
of the first layer and which is connected to the first thin film
transistor; a second layer having a second thin film transistor; a
second connection terminal formed on a first plane of the second
layer; a third connection terminal formed on a second plane which
opposes to the first plane; a first organic resin layer having a
conductive particle for connecting the first connection terminal
and the second connection terminal; an antenna having a first
conductive layer serving as a radiating electrode, a second
conductive layer serving as a ground contact body, and a dielectric
layer sandwiched between the first conductive layer and the second
conductive layer; and a second organic resin layer having a
conductive particle for connecting the third connection terminal
and the antenna. The wireless chip may have a third conductive
layer, instead of the organic resin layer having a conductive
particle, for connecting the antenna and the third connection
terminal.
[0018] A wireless chip of the present invention includes a first
layer having a first thin film transistor formed over an insulating
substrate; a first connection terminal which is formed on a surface
of the first layer and which is connected to the first thin film
transistor; a second layer having a second thin film transistor; a
second connection terminal formed on a first plane of the second
layer; a third connection terminal formed on a second plane which
opposes to the first plane; a first organic resin layer having a
conductive particle for connecting the first connection terminal
and the second connection terminal; a layer having one or more
passive elements selected from an inductor, a condenser
(capacitor), and a resistor; a fourth connection terminal formed on
a first plane of the layer having the one or more passive elements;
a fifth connection terminal formed on a second plane which opposes
to the first plane of the layer having the one or more passive
elements; a second organic resin layer having a conductive particle
for connecting the third connection terminal and the fourth
connection terminal; an antenna having a first conductive layer
serving as a radiating electrode, a second conductive layer serving
as a ground contact body, and a dielectric layer sandwiched between
the first conductive layer and the second conductive layer; and a
third organic resin layer having a conductive particle for
connecting the fifth connection terminal and the antenna.
[0019] A wireless chip of the present invention includes a first
layer having a first thin film transistor formed over an insulating
substrate; a first connection terminal which is formed on a surface
of the first layer and which is connected to the first thin film
transistor; a second layer having a second thin film transistor; a
second connection terminal formed on a first plane of the second
layer; a third connection terminal formed on a second plane which
opposes to the first plane; a first conductive layer for connecting
the first connection terminal and the second connection terminal; a
layer having one or more passive elements selected from an
inductor, a condenser (capacitor), and a resistor; a fourth
connection terminal formed on a first plane of the layer having the
one or more passive elements; a fifth connection terminal formed on
a second plane which opposes to the first plane of the layer having
the one or more passive elements; a second conductive layer for
connecting the third connection terminal and the fourth connection
terminal; an antenna having a third conducive layer serving as a
radiating electrode, a fourth conductive layer serving as a ground
contact body, and a dielectric layer sandwiched between the third
conductive layer and the fourth conductive layer; and a fifth
conductive layer for connecting the fifth connection terminal and
the antenna.
[0020] Over the insulating substrate, a region where the first
layer and the second layer are to be formed may be different from a
region where the antenna is to be provided.
[0021] The layer having the thin film transistor, the first layer,
and the second layer have thicknesses in the range of 1 to 10
.mu.m, preferably 1 to 5 .mu.m.
[0022] A wireless chip of the present invention includes a layer
which is formed over an insulating substrate and which has a first
thin film transistor, a second thin film transistor, and a first
antenna connected to the first thin film transistor; a connection
terminal which is formed on a surface of the layer having the first
thin film transistor, the second thin film transistor, and the
first antenna connected to the first thin film transistor and which
is connected to the second thin film transistor; a second antenna
having a first conductive layer serving as a radiating electrode, a
second conductive layer serving as a ground contact body, and a
dielectric layer sandwiched between the first conductive layer and
the second conductive layer; and an organic resin layer having a
conductive particle for connecting the connection terminal and the
second antenna. The wireless chip may have a third conductive
layer, instead of the organic resin layer having a conductive
particle, for connecting the second antenna and the connection
terminal.
[0023] The wireless chip may have a central processing unit or a
detection portion, in addition to a high frequency circuit.
[0024] Further, the insulating substrate is preferably an
inflexible insulating substrate, and a glass substrate or a quartz
substrate is typically used.
[0025] The dielectric layer is formed with ceramic, an organic
resin, or a mixture of ceramic and an organic resin. As typical
examples of ceramic, alumina, glass, forsterite, barium titanate,
lead titanate, strontium titanate, lead zirconate, lithium niobate,
and lead zirconium titanate are given. As typical examples of the
dielectric layer, an epoxy resin, a phenol resin, a polybutadiene
resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate
are given.
[0026] The present invention provides an electronic appliance
having the above wireless chip. As typical examples of the
electronic appliance, a liquid crystal display device, an EL
display device, a television device, a mobile phone, a printer, a
camera, a personal computer, a speaker device, a headphone, a
navigation device, and an electronic key are given.
[0027] The layer having the thin film transistor formed over the
insulating substrate can be formed so as to have almost the same
dimension as the antenna. The insulating substrate serves as a
protector for the layer having the thin film transistor as well as
a protector for the antenna. Therefore, the mechanical strength of
the wireless chip increases.
[0028] Since a patch antenna has high mechanical strength, the
patch antenna can be used repeatedly. Therefore, a wireless chip
having a patch antenna can be provided to a recyclable container
such as a returnable container.
[0029] Further, since an integrated circuit is formed using
electrically-isolated thin film transistors in a wireless chip of
the present invention, an electric wave is more difficult to be
blocked than in a wireless chip having an integrated circuit formed
using a semiconductor substrate, thereby suppressing the
attenuation of a signal due to the block of an electric wave. Thus,
it is possible to send and receive data with high efficiency.
[0030] Since a wireless chip including an integrated circuit which
is formed using a thin film transistor and a passive element formed
with a thick film pattern has each circuit formed with an element
having an appropriate function, the wireless chip has composite
functions. By mounting a wireless chip of the present invention to
a wiring substrate, the number of mount parts can be decreased,
thereby allowing the size reduction of a wiring substrate dimension
as well as the electronic appliance having the wiring
substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] In the accompanying drawings:
[0032] FIGS. 1A and 1B are cross-sectional views showing a wireless
chip of the present invention;
[0033] FIG. 2 is a cross-sectional view showing a wireless chip of
the present invention;
[0034] FIG. 3 is a cross-sectional view showing a wireless chip of
the present invention;
[0035] FIG. 4 is a cross-sectional view showing a wireless chip of
the present invention;
[0036] FIG. 5 is a cross-sectional view showing a wireless chip of
the present invention;
[0037] FIGS. 6A and 6B are a development view and a cross-sectional
view, showing a wireless chip of the present invention;
[0038] FIGS. 7A to 7D are perspective views showing patch antennas
applicable to the present invention;
[0039] FIGS. 8A to 8C are top views showing an antenna applicable
to the present invention;
[0040] FIGS. 9A to 9C show a wireless chip of the present
invention;
[0041] FIG. 10 shows a central processing unit applicable to the
present invention;
[0042] FIGS. 11A to 11F show application examples of a wireless
chip of the present invention;
[0043] FIGS. 12A to 12D show application examples of a wireless
chip of the present invention;
[0044] FIG. 13 shows a development view showing an application
example of a wireless chip of the present invention;
[0045] FIG. 14 shows a high-frequency circuit applicable to the
present invention;
[0046] FIGS. 15A to 15H are cross-sectional views showing
manufacturing steps of a thin film transistor applicable to the
present invention;
[0047] FIGS. 16A to 16H are cross-sectional views showing
manufacturing steps of a thin film transistor applicable to the
present invention;
[0048] FIG. 17 shows an application example of a wireless chip of
the present invention; and
[0049] FIGS. 18A and 18B are cross-sectional views showing a thin
film transistor applicable to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
Embodiment Mode
[0050] Embodiment Modes and Embodiments of the present invention
will be described with reference to the drawings. However, since
the present invention can be embodied with many different modes, it
is easily understood by those skilled in the art that the mode and
detail can be variously modified without departing from the scope
of the present invention. Therefore, the present invention is not
construed as being limited to the description of Embodiment Modes
and Embodiments. In all the drawings for describing Embodiment
Modes and Embodiments, the same reference numerals are given to the
parts having similar functions or the same functions, and the
description to such parts is not made repeatedly.
Embodiment Mode 1
[0051] An embodiment mode of a wireless chip of the present
invention is shown in FIGS. 1A and 1B. FIGS. 1A and 1B are
cross-sectional views of a wireless chip.
[0052] In a wireless chip of this embodiment mode, a layer 102
having a thin film transistor formed over an insulating substrate
101 is fixed to an antenna 103 by an anisotropic conductive
adhesive 104. Moreover, a connection terminal 107 of the layer 102
having a thin film transistor and a power feeding layer 113 of the
antenna are electrically connected by conductive particles 109
dispersed in the anisotropic conductive adhesive 104. Further,
although not shown, a ground wiring of the layer having a thin film
transistor is electrically connected to a conductive layer serving
as a ground contact body of the antenna.
[0053] As the insulating substrate 101, an inflexible insulating
substrate is preferred. A quartz substrate or a glass substrate
such as a nonalkali glass substrate is used.
[0054] The layer 102 having a thin film transistor includes an
insulating layer 105 formed on a surface of the insulating
substrate 101, a thin film transistor 106 formed over the
insulating layer 105, an interlayer insulating layer 108 formed
over the thin film transistor 106, and a connection terminal 107
which is exposed at a surface of the interlayer insulating layer
108 and which is connected to the thin film transistor 106. The
layer 102 having a thin film transistor may have a resistance
element, a condenser (capacitor), and the like, in addition to the
thin film transistor.
[0055] The insulating substrate 101 and the layer 102 having a thin
film transistor formed over the insulating substrate 101 are
preferably as large as the antenna 103, which is several
mm.times.several mm to several tens mm.times.several tens mm.
Moreover, the thickness of the layer having a thin film transistor
ranges from several .mu.m to several tens .mu.m, typically from 1
to 10 .mu.m and preferably from 2 to 5 .mu.m.
[0056] The insulating layer 105 formed on the surface of the
insulating substrate 101 is provided in the case that the
insulating substrate 101 is a nonalkali glass substrate. The
insulating layer 105 can prevent the movement of movable ions in
the nonalkali glass substrate. The insulating layer 105 is formed
with silicon oxide, silicon oxynitride, silicon nitride oxide,
silicon nitride, or the like by a known method such as a sputtering
method or a plasma CVD method.
[0057] A mode of the thin film transistor 106 is described with
reference to FIGS. 18A and 18B. FIG. 18A shows an example of a top
gate thin film transistor. The insulating layer 105 is formed over
the insulating substrate 101, and the thin film transistor 106 is
provided over the insulating layer 105. In the thin film transistor
106, a semiconductor layer 1302 is provided over the insulating
layer 105 and an insulating layer 1303 serving as a gate insulating
layer is provided over the semiconductor layer 1302. Over the
insulating layer 1303, a gate electrode 1304 corresponding to the
semiconductor layer 1302 is formed. An insulating layer 1305
serving as a protective layer is formed over the gate electrode
1304, and an insulating layer 1306 serving as an interlayer
insulating layer is provided over the insulating layer 1305. An
insulating layer serving as a protective layer may be further
provided over the insulating layer 1306.
[0058] The semiconductor layer 1302 is a layer formed with a
semiconductor having a crystal structure. A non-single crystal
semiconductor or a single crystal semiconductor can be used. In
particular, it is preferable to use a crystalline semiconductor
obtained by crystallizing amorphous or microcrystalline
semiconductor with laser irradiation, a crystalline semiconductor
obtained by crystallizing amorphous or microcrystalline
semiconductor through a heat treatment, or a crystalline
semiconductor obtained by crystallizing amorphous or
microcrystalline semiconductor with a combination of a heat
treatment and laser irradiation. In the heat treatment, a
crystallization method using a metal element such as nickel which
can promote crystallization of silicon semiconductor can be
used.
[0059] In the case of the crystallization with laser irradiation,
it is possible to conduct crystallization in such a way that a
portion in a crystalline semiconductor that is melted by
irradiation with laser light is continuously moved in a direction
where the laser light is delivered, wherein the laser light is
continuous wave laser light or ultrashort pulsed laser light having
a high repetition rate of 10 MHz or more and a pulse width of 1
nanosecond or less, preferably 1 to 100 picoseconds. By using such
a crystallization method, a crystalline semiconductor having a
large grain diameter with a crystal grain boundary extending in one
direction can be obtained. By making a drift direction of carriers
conform to the direction where the crystal grain boundary extends,
the electric field effect mobility in the transistor can be
increased. For example, 400 cm.sup.2/V-sec or more can be
achieved.
[0060] In the case of applying the above crystallization step to a
crystallization process where the temperature is not more than the
upper temperature limit of a glass substrate (approximately
600.degree. C.), a large glass substrate can be used. Therefore, a
large number of wireless chips can be manufactured with one
substrate, and the cost can be decreased.
[0061] The semiconductor layer 1302 may be formed by conducting a
crystallization step through heating at the temperature higher than
the upper temperature limit of a glass substrate. Typically, a
quartz substrate is used as the insulating substrate 101 and an
amorphous or microcrystalline semiconductor is heated at
700.degree. C. or more to form the semiconductor layer 1302. As a
result, a semiconductor with superior crystallinity can be formed.
Therefore, a thin film transistor which is superior in response
speed, mobility, and the like and which is capable of high-speed
operation can be provided.
[0062] Moreover, the semiconductor layer 1302 may be formed with a
single-crystal semiconductor. Such a semiconductor layer may be
formed using a SIMOX (Separation by Implanted Oxygen) substrate in
which a first single crystal semiconductor layer, an insulating
layer, and a second single crystal semiconductor layer are stacked
in order, in such a way that after a transistor using the first
single crystal semiconductor layer as a channel portion is
manufactured, the second single crystal semiconductor layer is
etched away, and then the insulating layer is attached onto the
insulating substrate 101. As the etching method of the second
single crystal semiconductor layer, polishing using a grinding
polishing device such as a grind stone, dry etching or wet etching
using etchant, or a combination of a grinding polishing device and
etchant may be employed. As the etchant, in the case of wet
etching, a mixed solution in which fluorinated acid is diluted with
water or ammonium fluoride; a mixed solution of fluorinated acid
and nitric acid; a mixed solution of fluorinated acid, nitric acid,
and acetic acid; a mixed solution of hydrogen peroxide and sulfuric
acid; a mixed solution of hydrogen peroxide and ammonium water; a
mixed solution of hydrogen peroxide and hydrochloric acid; or the
like is used. In the case of dry etching, gas including molecules
or atoms of halogen such as fluorine, or gas including oxygen is
used. It is preferable to use gas or liquid including halogen
fluoride or a halogen compound. For example, chlorine trifluoride
(CIF.sub.3) is preferably used as the gas including halogen
fluoride.
[0063] Since such a transistor in which the semiconductor layer is
formed with a single crystal semiconductor has high response speed,
mobility, and the like, a transistor capable of high-speed
operation can be provided. Moreover, since the transistor has low
variation in its characteristic, a wireless chip in which high
reliability has been achieved can be provided.
[0064] A gate electrode 1304 can be formed with metal or a
poly-crystalline semiconductor doped with an impurity imparting one
conductivity type. In the case of using metal, tungsten (W),
molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), or
the like can be used. Moreover, metal nitride obtained by nitriding
the above metal can also be used. Alternatively, a structure in
which a first layer including the metal nitride and a second layer
including the metal are stacked may be employed. In the case of
stacking layers, an end of the first layer may be provided outer
than an end of the second layer. By forming the first layer with
metal nitride, the first layer can serve as metal barrier. In other
words, the first layer can prevent the metal of the second layer
from dispersing into the insulating layer 1303 and the
semiconductor layer 1302 under the insulating layer 1303.
[0065] A sidewall (side wall spacer) 1308 is formed at a side
surface of the gate electrode 1304. The sidewall can be formed by
forming an insulating layer including silicon oxide over a
substrate by a CVD method and anisotropically etching the
insulating layer by an RIE (Reactive Ion Etching) method.
[0066] The transistor formed by combining the semiconductor layer
1302, the insulating layer 1303, the gate electrode 1304, and the
like can have any structure such as a single drain structure, an
LDD (Lightly Doped Drain) structure, or a gate-overlapped drain
structure. Here, a thin film transistor having an LDD structure is
shown in which a low-concentration impurity region 1310 is formed
in a part of the semiconductor layer that overlaps the sidewall.
Moreover, a single gate structure, a multi-gate structure in which
transistors to which gate voltage having the same electric
potential equally is applied are serially connected, or a dual gate
structure sandwiching the semiconductor layer with the gate
electrodes on its upper and lower sides can be employed.
[0067] The insulating layer 1306 is formed with an inorganic
insulating material such as silicon oxide or silicon oxynitride, or
an organic insulating material such as an acrylic resin or a
polyimide resin. In the case of forming the insulating layer by a
coating method such as spin coating or a roll coater, after
applying an insulating film material dissolved in an organic
solvent, a heat treatment is performed thereto, thereby forming the
insulating layer with silicon oxide. For example, after forming a
film including a siloxane bond by a coating method, a heat
treatment is conducted at 200 to 400.degree. C., thereby forming
the insulating layer with silicon oxide. By using an insulating
layer formed by a coating method or an insulating layer which has
been flattened by reflow as the insulating layer 1306, it is
possible to prevent wirings to be formed over the layer from being
broken. Moreover, the insulating layer can also be used effectively
when forming a multilayer wiring.
[0068] A wiring 1307 formed over the insulating layer 1306 can be
provided so as to intersect with a wiring to be formed with the
same layer as the gate electrode 1304 and has a multilayer wiring
structure. The multilayer wiring structure can be obtained by
forming wirings over a plurality of stacked insulating layers which
have the similar function to the insulating layer 1306. The wiring
1307 preferably has a combination of a low-resistant material such
as aluminum and metal barrier using a metal material having a high
melting point such as titanium (Ti) or molybdenum (Mo). For
example, a multilayer structure including titanium (Ti) and
aluminum (Al), a multilayer structure including molybdenum (Mo) and
aluminum (Al), and the like are given.
[0069] FIG. 18B shows an example of a bottom-gate thin film
transistor. The insulating layer 105 is formed over the insulating
substrate 101, and the thin film transistor 106 is provided over
the insulating layer 105. In the thin film transistor 106, the gate
electrode 1304, the insulating layer 1303 serving as a gate
insulating layer, the semiconductor layer 1302, a channel
protective layer 1309, the insulating layer 1305 serving as a
protective layer, and the insulating layer 1306 serving as an
interlayer insulating layer are provided. Moreover, an insulating
layer serving as a protective layer may be formed thereover. The
wiring 1307 can be formed over the insulating layer 1305 or the
insulating layer 1306. In the case of forming the bottom-gate thin
film transistor, the insulating layer 105 is not necessarily
formed.
[0070] The interlayer insulating layer 108 shown in FIG. 1A is
formed by a similar method to the insulating layer 1306. The
connection terminal 107 is formed by a similar method to the wiring
1307. On the uppermost surface of the wiring, a layer may be formed
with one or plural elements selected from gold, silver, copper,
palladium, and platinum by a printing method, a plating method, a
sputtering method, or the like.
[0071] The anisotropic conductive adhesive 104 is an adhesive
organic resin in which conductive particles 109 (each having a
grain diameter of approximately several nm to several .mu.m) are
dispersed. An epoxy resin, a phenol resin, or the like is given as
the organic resin. The conductive particle is formed with one or
plural elements selected from gold, silver, copper, palladium, and
platinum, or may be a particle having a multilayer structure of
these elements. Further, a conductive particle formed with a resin
whose surface is coated with a thin film which is formed with one
or plural metals selected from gold, silver, copper, palladium, and
platinum may be used.
[0072] Instead of the anisotropic conductive adhesive 104, a
conductive layer formed by curing conductive paste may be used. As
a typical example of the conductive layer formed by curing the
conductive paste, alloy including plural elements selected from tin
(Sn), silver (Ag), bismuth (Bi), copper (Cu), indium (In), nickel
(Ni), antimony (Sb), and zinc (Zn) is given.
[0073] The antenna 103 has a dielectric layer 110, a first
conductive layer 111 formed on one surface of the dielectric layer
110, a second conductive layer 112 which is formed on another
surface of the dielectric layer 110 and which opposes to the first
conductive layer 111 through the dielectric layer 110, and a power
feeding layer 113. The antenna having such a structure is
hereinafter referred to as a patch antenna. The first conductive
layer 111 serves as a radiating electrode. The second conductive
layer 112 serves as a ground contact body. The power feeding layer
113 is provided so as not to contact the first conductive layer 111
and the second conductive layer 112. Power is fed from the antenna
to a circuit including the thin film transistor or from the circuit
including the thin film transistor to the antenna, through the
power feeding layer 113.
[0074] In this embodiment mode, the connection terminal 107 is
electrically connected to the power feeding layer 113 through the
conductive particle 109 included in the anisotropic conductive
adhesive 104. Although not shown, a ground electrode of the circuit
including the thin film transistor is electrically connected to the
second conductive layer 112 of the antenna 103 through the
conductive particle 109.
[0075] Here, the patch antenna is described.
[0076] The dielectric layer 110 of the patch antenna can be formed
with ceramic, an organic resin, a mixture of ceramic and an organic
resin, or the like. As a typical example of ceramic, alumina,
glass, forsterite, or the like is given. Moreover, plural ceramics
may be mixed. In order to obtain high dielectric constant, it is
preferable to form the dielectric layer 110 with a ferroelectric
material. As a typical example of the ferroelectric material,
barium titanate (BaTiO.sub.3), lead titanate (PbTiO.sub.3),
strontium titanate (SrTiO.sub.3), lead zirconate (PbZrO.sub.3),
lithium niobate (LiNbO.sub.3), zircon lead titanate (PZT), or the
like is given. Moreover, a mixture of plural ferroelectric
materials may be used.
[0077] As the organic resin which can be used for the dielectric
layer 110, a thermosetting resin or a thermoplastic resin is
appropriately used. As a typical example of the organic resin, a
resin material such as an epoxy resin, a phenol resin, a
polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl,
polyfumarate, a fluorine resin, or the like can be used. Moreover,
a mixture of plural organic resin materials may also be used.
[0078] In the case of forming the dielectric layer 110 with a
mixture of ceramic and an organic resin, it is preferable to form
the dielectric layer 110 in such a way that ceramic particles are
dispersed in the organic resin. Here, the content of the ceramic
particles in the dielectric layer 110 is preferably 20 vol % or
more and 60 vol % or less. Moreover, the diameter of the ceramic
particle preferably ranges from 1 to 50 .mu.m.
[0079] The relative permittivity of the dielectric layer 110
preferably ranges from 2.6 to 150, more preferably 2.6 to 40. By
using a ferroelectric material having a high relative permittivity,
it is possible to decrease the capacitance of the patch
antenna.
[0080] The first conductive layer 111, the second conductive layer
112, and the power feeding layer 113 of the patch antenna can be
formed with metal selected from gold, silver, copper, palladium,
platinum, and aluminum; alloy including the metal; or the like. The
first conductive layer 111, the second conductive layer 112, and
the power feeding layer 113 of the patch antenna can be formed by a
printing method or a plating method. Each of these conductive
layers can be formed by forming a conductive film over the
dielectric layer by an evaporation method, a sputtering method, or
the like and partially etching the conductive film.
[0081] The patch antenna is preferably a rectangular flat plate
with a size of 12 mm.times.12 mm.times.4 mm, 7 mm.times.7
mm.times.3 mm, or 7 mm.times.7 mm.times.1.5 mm; however, the size
is not limited to these. A circular flat plate can also be
used.
[0082] The patch antenna to be used as the antenna 103 of this
embodiment mode is described with reference to FIGS. 7A to 7D.
[0083] FIG. 7A shows a patch antenna having a first conductive
layer 202 serving as a radiating electrode, a dielectric layer 201,
a second conductive layer 203 serving as a ground contact body, and
a power feeding point 204. The patch antenna is a
circularly-polarized wave antenna if the first conductive layer 202
serving as a radiating electrode is circular and a degenerate
separation element 205 exists in two regions which are symmetric
about a point. Meanwhile, if the first conductive layer 202 is
circular, the patch antenna is a linearly-polarized wave
antenna.
[0084] FIG. 7B shows a patch antenna having a first conductive
layer 212 serving as a radiating electrode, a dielectric layer 211,
a second conductive layer 213 serving as a ground contact body, and
a power feeding point 214. The patch antenna is a
circularly-polarized wave antenna if the first conductive layer 212
serving as a radiating electrode is rectangular and a degenerate
separation element 215 exists in two regions which are symmetric
about a point. Meanwhile, if the first conductive layer 212 is
rectangular, the patch antenna is a linearly-polarized wave
antenna.
[0085] FIG. 7C shows a patch antenna having a first conductive
layer 222 serving as a radiating electrode, a dielectric layer 221,
a second conductive layer 223 serving as a ground contact body, and
a power feeding layer 224. The first conductive layer 222 serving
as a radiating electrode is rectangular, and has a degenerate
separation element 225 at two angle portions which are symmetric
about a point. The patch antenna is a circularly-polarized wave
antenna if the first conductive layer 222 serving as a radiating
electrode is rectangular and the degenerate separation element 225
exists in two regions which are symmetric about a point. Meanwhile,
if the first conductive layer 222 is rectangular, the patch antenna
is a linearly-polarized wave antenna. The first conductive layer
222 serving as a radiating electrode and the power feeding layer
224 are capacitance-coupled through gap. Moreover, since the power
feeding layer 224 is formed at a side surface of the dielectric
layer, surface mount is possible.
[0086] Since the patch antennas shown in FIGS. 7A to 7C are
provided with the second conductive layers 203, 213, and 223
serving as ground contact bodies on one surfaces of the dielectric
layers 201, 211, and 221, the directivity exists on the first
conductive layers 202, 212, and 222 side.
[0087] FIG. 7D shows a patch antenna having a first conductive
layer 242 serving as a radiating electrode, a dielectric layer 241,
a second conductive layer 243 serving as a ground contact body, and
a power feeding layer 244. In the first conductive layer 242,
orthogonal slits are formed on diagonal lines. In other words, a
crisscross notch is provided. Therefore, the dielectric layer 241
is exposed in a crisscross manner. The first conductive layer 242
serving as a radiating electrode and the power feeding layer 244
are capacitance-coupled through a gap. As a typical example of the
patch antenna having such a shape, CABPB 1240, CABPB 0730, and
CABPB 0715 (manufactured by TDK Corporation) are given. Moreover,
since the power feeding layer 244 is formed at a side surface of
the dielectric layer, surface mount is possible. Since the patch
antenna having such a structure has non-directivity by the
orthogonal slits of the radiating electrode, a place to be mounted
on and an angle to be disposed at do not need to be selected. Thus,
the degree of freedom in designing electronic appliances can be
widened.
[0088] A known patch antenna other than the patch antennas shown in
FIGS. 7A to 7D can also be used.
[0089] By using a patch antenna, it is possible to send and receive
the followings: GPS (Global Positioning System (1.5 GHz)),
satellite digital broadcast (2.6 GHz), PAN (Personal Area Network)
such as wireless LAN (Local Area Network) (2.4 GHz, 5.2 GHz), a
wireless communication technology for connecting information
appliances (Bluetooth (registered trademark) (2.4 GHz)), or UWB
(Ultra Wide Band) (3 to 10 GHz), third-generation data
communication, packet communication, and the like.
[0090] As shown in FIG. 1B, plural layers having thin film
transistors may be stacked over an insulating substrate.
Specifically, a second layer 122 having a thin film transistor is
formed over a first layer 121 having a thin film transistor. A
third layer 123 having a thin film transistor is formed over the
second layer 122 having a thin film transistor. In the third layer
123 having a thin film transistor, an insulating layer 127 is
formed over a thin film transistor. Further, on a surface of the
insulating layer 127, a connection terminal 126 connected to any
one of the thin film transistors in the first layer having a thin
film transistor to the third layer having a thin film transistor is
formed.
[0091] In the first layer 121 having a thin film transistor, a
first insulating layer 124 is formed over a thin film transistor.
In the first insulating layer 124, a thin film transistor in the
first layer 121 having a thin film transistor is electrically
disconnected from a thin film transistor in the second layer 122
having a thin film transistor. Further, in the second layer 122
having a thin film transistor, a second insulating layer 125 is
formed over a thin film transistor. In the second insulating layer
125, a thin film transistor in the second layer 122 having a thin
film transistor is electrically disconnected from a thin film
transistor in the third layer 123 having a thin film transistor. In
the third layer 123 having a thin film transistor, a third
insulating layer 127 is formed over a thin film transistor. In the
third insulating layer 127, a thin film transistor in the third
layer 123 having a thin film transistor is electrically
disconnected from the connection terminal.
[0092] A compact and multi-functional wireless chip can be obtained
by forming a processor unit, a power source circuit, a clock
generating circuit, a data modulation/demodulation circuit, a
control circuit, an interface circuit, a storage circuit, a
detection circuit, or the like, by using each of the first layer
having a thin film transistor to the third layer having a thin film
transistor.
[0093] The layer 120 having a thin film transistor is shown using
the first layer having a thin film transistor to the third layer
having a thin film transistor in FIG. 1B; however, the present
invention is not limited to this. The layer 120 having a thin film
transistor may include two layers having thin film transistors.
Further, the layer 120 having a thin film transistor may include
four or more layers having thin film transistors.
[0094] Here, a structure of a wireless chip of the present
invention is described with reference to FIGS. 9A to 9C and FIG.
10. As shown in FIG. 9A, a wireless chip 20 of the present
invention has a function to send and receive data wirelessly, and
also has a power source circuit 11, a clock generating circuit 12,
a data modulation/demodulation circuit 13, a control circuit 14
which controls another circuit, an interface circuit 15, a storage
circuit 16, a bus 17, and an antenna 18.
[0095] Further, as shown in FIG. 9B, the wireless chip 20 of the
present invention has a function to send and receive data
wirelessly, and may have a microprocessor (CPU) 21, in addition to
the power source circuit 11, the clock generating circuit 12, the
data modulation/demodulation circuit 13, the control circuit 14
which controls another circuit, the interface circuit 15, the
storage circuit 16, the bus 17, and the antenna 18.
[0096] Moreover, as shown in FIG. 9C, the wireless chip 20 of the
present invention has a function to send and receive data
wirelessly, and may have a detection portion 30 including a
detection element 31 and a detection control circuit 32, in
addition to the power source circuit 11, the clock generating
circuit 12, the data modulation/demodulation circuit 13, the
control circuit 14 which controls another circuit, the interface
circuit 15, the storage circuit 16, the bus 17, the antenna 18, and
the central processing unit 21.
[0097] In the wireless chip of the present invention, the detection
portion 30 including the detection element 31 and the detection
control circuit 32 and the like are formed in addition to the power
source circuit 11, the clock generating circuit 12, the data
modulation/demodulation circuit 13, the control circuit 14 which
controls another circuit, the interface circuit 15, the storage
circuit 16, the bus 17, the antenna 18, and the central processing
unit 21, by using the layers having thin film transistors.
[0098] The power source circuit 11 is a circuit generating various
power sources to be supplied to the respective circuits in the
wireless chip 20 based on an alternating signal inputted from the
antenna 18. The clock generating circuit 12 is a circuit generating
various clock signals to be supplied to the respective circuits in
the wireless chip 20 based on an alternating signal inputted from
the antenna 18. The data modulation/demodulation circuit 13 has a
function to modulate/demodulate data to be sent to or received from
a reader/writer 19. The control circuit 14 has a function to
control the storage circuit 16. The antenna 18 has a function to
send and receive an electric field or an electric wave to and from
the reader/writer 19. The reader/writer 19 has a function to
exchange data with the wireless chip, control the wireless chip,
and control the process of the data sent to or received from the
wireless chip. The wireless chip is not limited to the above
structure, and for example, another element such as a limiter
circuit of power source voltage or hardware only for processing
codes may be added.
[0099] The storage circuit 16 has one or plural elements selected
from a DRAM, an SRAM, an FeRAM, a mask ROM, a PROM, an EPROM, an
EEPROM, a flash memory, and an organic memory.
[0100] An organic memory has a layer containing an organic compound
between a pair of electrodes. Moreover, an organic memory has,
between a pair of electrodes, a layer in which an organic compound
is mixed with an inorganic compound. As a typical example of the
organic compound, a substance whose shape, conductivity, or crystal
condition changes by an electric action or light irradiation is
used. Typically, a conjugate polymer doped with a compound
generating acid by absorbing light (photoacid generator), an
organic compound having a high hole-transporting property, or an
organic compound having a high electron-transporting property can
be used.
[0101] In the case of providing a mixed layer of an organic
compound and an inorganic compound between a pair of electrodes, it
is preferable to mix an organic compound having a high
hole-transporting property and an inorganic compound which is easy
to receive electrons. Moreover, it is preferable to mix an organic
compound having a high electron-transporting property and an
inorganic compound which is easy to donate electrons. By having
such structures, many hole carriers or electron carriers generate
in an organic compound originally having almost no carriers
intrinsically, so that the organic compound exhibits an extremely
high hole-injecting/transporting property or
electron-injecting/transporting property.
[0102] Since the size reduction, the decrease in film thickness, as
well as the increase in capacitance can be achieved simultaneously
in the organic memory, the wireless chip can be compact and
lightweight by forming the storage circuit 16 with the organic
memory.
[0103] A mask ROM can be formed at the same time as the thin film
transistor. The mask ROM is formed with plural transistors. At this
time, data can be written by opening or not opening a contact hole
for a wiring which connects to, for example, a drain region of the
transistor. For example, data (information) of 1 (ON) when the
contact hole is opened and data (information) of 0 (OFF) when the
contact hole is not opened can be written in a memory cell.
[0104] For example, a part of a photoresist formed over the
interlayer insulating layer 108 over the thin film transistor 106
shown in FIG. 1A where the contact hole is to be provided is
irradiated with an electron beam or a laser, before or after a step
of light-exposing the photoresist through a reticle (photomask)
using a light-exposure apparatus such as a stepper. After that, the
steps of developing, etching, peeling the photoresist, and the like
are conducted as usual to form a wiring. This makes it possible to
independently form a pattern where the contact hole is provided and
a pattern where the contact hole is not provided only by selecting
regions to be irradiated with the electron beam or the laser,
without changing the reticle (photomask). In other words, by
selecting the region to be irradiated with the electron beam or the
laser, a mask ROM in which different data are written for each of
the semiconductor devices at the production can be
manufactured.
[0105] An UID (Unique Identifier) and the like for each
semiconductor device can be manufactured by using such a mask
ROM.
[0106] Here, a structure of the central processing unit 21 is
described with reference to a block diagram of FIG. 10.
[0107] First, a signal is inputted in the bus 17, and then the
signal is decoded in an analysis circuit 1003 (also referred to as
an instruction decoder), and the decoded signal is inputted into a
control signal generating circuit 1004 (CPU timing controller).
Upon the input of the signal, a control signal is outputted from
the control signal generating circuit 1004 to an arithmetic circuit
(hereinafter referred to as an ALU 1009) and a storage circuit
(hereinafter referred to as a register 1010).
[0108] The control signal generating circuit 1004 includes an ALU
controller (hereinafter referred to as ACON) 1005 for controlling
the ALU 1009, a circuit (hereinafter referred to as RCON) 1006 for
controlling the register 1010, a timing controller (hereinafter
referred to as TCON) 1007 for controlling timing, and an interrupt
controller (hereinafter referred to as ICON) 1008 for controlling
interruption.
[0109] Meanwhile, after a process signal is inputted into the bus
17, the signal is outputted to the ALU 1009 and the register 1010.
Then, a process based on the control signal inputted from the
control signal generating circuit 1004 (such as a memory read
cycle, a memory write cycle, an I/O read cycle, an I/O write cycle,
or the like) is conducted.
[0110] The register 1010 includes a general-purpose register, a
stack pointer (SP), a program counter (PC), and the like.
[0111] An address controller 1011 outputs a 16-bit address to the
bus 17.
[0112] The structure of the central process unit shown in this
embodiment does not limit the structure of the present invention. A
structure of a known central process unit other than the above
structures may also be employed.
[0113] The detection portion 30 can detect temperature, pressure,
flow rate, light, magnetism, acoustic wave, acceleration, humidity,
gas constituent, liquid constituent, and other characteristics by a
physical or chemical means. Moreover, the detection portion 30 has
the detection element 31 for detecting a physical amount or a
chemical amount and the detection control circuit 32 for converting
the physical amount or the chemical amount detected by the
detection element 31 into an appropriate signal such as an electric
signal. As the detection element 31, it is possible to use a
resistor element, a capacitance-coupled element, an
inductively-coupled element, a photoelectromotive element, a
photoelectric conversion element, a thermoelectromotive element, a
transistor, a thermistor, a diode, a piezo element, an
electrostatic capacitance element, a piezoelectric element, or the
like. The number of detection portions 30 may be more than one and,
in such a case, it is possible to detect a plurality of physical
amounts or chemical amounts simultaneously.
[0114] The physical amount described here means temperature,
pressure, flow rate, light, magnetism, acoustic wave, acceleration,
humidity, and the like, while the chemical amount means a chemical
substance such as a gas constituent or a liquid constituent like
ions, or the like. In addition, an organic compound such as a
particular biological substance included in blood, sweat, urine, or
the like (for example, blood-sugar level in the blood) is also
included. In particular, in the case of detecting the chemical
amount, since a particular substance needs to be selectively
detected, a substance which selectively reacts with the substance
to be detected is provided in advance in the detection element 31.
For example, in the case of detecting a biological substance, it is
preferable to fix, in a polymer or the like, enzyme, a resistor
molecule, a microbial cell, or the like which selectively reacts
with the biological substance to be detected by the detection
element 31.
[0115] At the communication between the reader/writer and the
wireless chip, it is possible to detect temperature, pressure, flow
rate, light, magnetism, acoustic wave, acceleration, humidity, gas
constituent, liquid constituent, and other characteristics, by
using the detection portion 30. A film-like secondary battery may
be used for the wireless chip. As a typical example of the
film-like secondary battery, a thin secondary battery having gel to
which an electrolysis solution has penetrated can be used. In this
case, even when the communication is not made with the
reader/writer, the above characteristics can be detected by using
the detection portion 30.
[0116] In the wireless chip of the present embodiment mode, the
antenna and the layer having the thin film transistor formed over
the insulating substrate can be formed to have almost the same
dimension. The insulating substrate serves as a protector for the
layer having a thin film transistor as well as a protector for the
antenna. Therefore, the mechanical strength of the wireless chip
increases.
Embodiment Mode 2
[0117] An embodiment mode of a wireless chip of the present
invention is shown in FIG. 2. FIG. 2 is a cross-sectional view of a
wireless chip. In this embodiment mode, a structure of a wireless
chip which has a patch antenna and plural layers having thin film
transistors wherein the layers are fixed to each other by an
anisotropic conductive adhesive is described.
[0118] In a wireless chip of this embodiment mode, a first layer
102 having a thin film transistor is formed over an insulating
substrate 101 similarly to Embodiment Mode 1. Further, the first
layer 102 having a thin film transistor and a second layer 131
having a thin film transistor are fixed to each other by an
anisotropic conductive adhesive 133.
[0119] A first connection terminal formed on the surface of the
first layer 102 having a thin film transistor is electrically
connected to a second connection terminal formed on the surface of
the second layer having a thin film transistor through conductive
particles dispersed in the anisotropic conductive adhesive 133.
[0120] After forming the second layer 131 having a thin film
transistor over a peeling layer which has been provided over a
substrate, the second layer 131 having a thin film transistor is
peeled from the peeling layer, and the second layer 131 is attached
over the first layer 102 having a thin film transistor through an
anisotropic conductive adhesive 133. As the peeling method, the
following methods can be used appropriately: (1) a metal oxide film
is provided as a peeling layer between a substrate having high heat
resistance and the second layer having a thin film transistor, and
the metal oxide film is weaken by crystallization, thereby peeling
the second layer having a thin film transistor; (2) an amorphous
silicon film containing hydrogen is provided as a peeling layer
between a substrate having heat resistance and the second layer
having a thin film transistor, and the amorphous silicon film is
removed by laser irradiation or etching, thereby peeling the second
layer having a thin film transistor; (3) a substrate having high
heat resistance (a glass substrate, a silicon substrate, or the
like) where the second layer having a thin film transistor has been
formed is mechanically removed or etched away with the use of a
solution or halogen fluoride gas such as NF3, BrF.sub.3, or
CIF.sub.3; (4) a metal layer and a metal oxide film are provided
between a substrate having high heat resistance and the second
layer having a thin film transistor, the metal oxide film is
weakened by crystallization, a part of the metal layer is etched
away with the use of a solution or halogen fluoride gas such as
NF3, BrF.sub.3, or CIF.sub.3, and then the weakened metal oxide
film is physically peeled; (5) a peeling layer and a metal oxide
film are provided between a substrate having high heat resistance
and an insulating layer, the second layer 131 having a thin film
transistor is formed over the insulating layer while the metal
oxide film is weakened, a part of the insulating layer of the
second layer 131 having a thin film transistor is irradiated with
laser light to form an opening portion (an opening portion for
exposing a part of the peeling layer), a base material is attached
onto the second layer 131 having a thin film transistor, and the
second layer 131 having a thin film transistor is physically peeled
from the substrate using the weakened metal oxide film; and the
like.
[0121] Similarly to the first layer 102 having a thin film
transistor and the second layer 131 having a thin film transistor,
the second layer 131 having a thin film transistor and the third
layer 132 having a thin film transistor are fixed to each other by
an anisotropic conductive adhesive 134.
[0122] A third connection terminal formed on the surface of the
second layer 131 having a thin film transistor is electrically
connected to a fourth connection terminal formed on the surface of
the third layer 132 having a thin film transistor, through
conductive particles dispersed in the anisotropic conductive
adhesive 134.
[0123] A compact and multi-functional wireless chip can be formed
by forming any one of a processor unit, a power source circuit, a
clock generating circuit, a data modulation/demodulation circuit, a
control circuit, an interface circuit, a storage circuit, a
detection circuit, and the like with the first layer 102 having a
thin film transistor to the third layer 132 having a thin film
transistor.
[0124] A fifth connection terminal formed on the surface of the
third layer 132 having a thin film transistor is electrically
connected to the antenna 103 through conductive particles in the
anisotropic conductive adhesive. Although not shown here, a ground
contact electrode of the circuit formed with the thin film
transistor is electrically connected to the second conductive layer
112 of the antenna through the conductive particle similarly.
Instead of an anisotropic conductive adhesive 135, a conductive
layer formed by curing conductive paste may be used.
[0125] Although a wireless chip is shown in which the first layer
having a thin film transistor to the third layer having a thin film
transistor are fixed to each other by the anisotropic conductive
adhesive, the present invention is not limited to this, and two
layers having thin film transistors may be used. Moreover, four or
more layers having thin film transistors may be used.
[0126] Further, this embodiment mode may be appropriately combined
with Embodiment Mode 1.
[0127] In the wireless chip of the present embodiment mode, the
antenna and the layer having a thin film transistor formed over the
insulating substrate can be formed to have almost the same
dimension. The insulating substrate serves as a protector for the
layer having a thin film transistor as well as a protector for the
antenna. Therefore, the mechanical strength of the wireless chip
increases.
[0128] Moreover, since the plural layers having thin film
transistors are fixed to the patch antenna in the wireless chip of
this embodiment mode, the wireless chip has composite
functions.
Embodiment Mode 3
[0129] An embodiment mode of a wireless chip of the present
invention will be described with reference to FIG. 3. FIG. 3 is a
cross-sectional view of a wireless chip. This embodiment mode will
describe a structure of a wireless chip in which a layer having a
thin film transistor and a patch antenna are provided in different
regions over an insulating substrate.
[0130] Over the insulating substrate 101, a layer 141 having a thin
film transistor is formed in a first region 145. On a surface of
the layer 141 having a thin film transistor, a connection terminal
143 is formed. The layer 141 having a thin film transistor can be
formed similarly to the first layer 102 having a thin film
transistor in Embodiment Mode 1. Further, as shown in FIG. 3, parts
of the thin film transistor and the insulating layer formed
thereover that are in a second region 146 may be removed.
[0131] The antenna 103 is fixed onto the second region 146 by an
anisotropic conductive adhesive 142. The connection terminal 143 of
the layer 141 having a thin film transistor is formed so as to
overlap both of the first region 145 and the second region 146. The
power feeding layer 113 of the antenna 103 is electrically
connected to the connection terminal 143 of the layer 141 having a
thin film transistor through conductive particles dispersed in the
anisotropic conductive adhesive 142. Although not shown, a ground
contact electrode in a circuit formed with a thin film transistor
is electrically connected to the second conductive layer 112 of the
antenna through the conductive particles similarly. Instead of the
anisotropic conductive adhesive 142, a conductive layer formed by
curing conductive paste may be used.
[0132] In this embodiment mode, the layer having a thin film
transistor has a single-layer structure; however, the layer having
a thin film transistor can have a multilayer structure as shown in
Embodiment Mode 2. Further, as shown in Embodiment Mode 3, plural
layers having thin film transistors may be fixed to each other by
an anisotropic conductive adhesive.
[0133] Since the plural layers having thin film transistors are
fixed to the patch antenna in the wireless chip of this embodiment
mode, the wireless chip has composite functions.
Embodiment Mode 4
[0134] An embodiment mode of a wireless chip of the present
invention will be described with reference to FIG. 4. FIG. 4 is a
cross-sectional view of a wireless chip. This embodiment mode will
describe a structure of a wireless chip in which a layer having a
thin film transistor, a passive element, and a patch antenna which
are formed over an insulating substrate are fixed to each other by
an anisotropic conductive adhesive, a conductive layer, or the
like.
[0135] As shown in Embodiment Mode 1, the layer 102 having a thin
film transistor is formed over the insulating substrate 101. The
layer 102 having a thin film transistor and the passive element 150
are fixed to each other by the anisotropic conductive adhesive 104.
Here, the passive element 150 is shown by a first passive element
151 and a second passive element 152. Moreover, the connection
terminal 107 exposed at the surface of the layer 102 having a thin
film transistor is electrically connected to a first connection
terminal 161 of the passive element 150 by conductive particles in
the anisotropic conductive adhesive 104. A conductive layer formed
by curing conductive paste may be used instead of the anisotropic
conductive adhesive 104.
[0136] The passive element 150 and the antenna 103 are fixed to
each other by conductive layers 171 and 172. The power feeding
layer 113 of the antenna 103, the second connection terminal 168 of
the passive element 150, the second conductive layer 112 serving as
a ground contact body of the patch antenna, and the third
connection terminal 169 of the passive element are respectively
connected electrically through the conductive layers 171 and 172.
The conductive layers 171 and 172 are formed by curing conductive
paste. As a typical example of the conductive layer formed by
curing conductive paste, alloy containing plural elements selected
from tin (Sn), silver (Ag), bismuth (Bi), copper (Cu), indium (In),
nickel (Ni), antimony (Sb), and zinc (Zn) is given.
[0137] The first passive element 151 includes one or more of a
capacitor, an inductor, and a resistor by using insulating layers
154 to 157 and conductive layers 162 to 164 provided therebetween.
Similarly, the second passive element 152 includes one or more of a
capacitor, an inductor, and a resistor by using insulating layers
157 to 160 and the conductive layers 165 to 167 provided
therebetween.
[0138] It is preferable that the relative permittivity of the
insulating layers 154 to 160 of the first passive element 151 or
the second passive element 152 range from 2.6 to 40. The conductive
layers 162 to 167 are formed with metal having high conductivity
such as gold, silver, copper, or aluminum or alloy including plural
elements selected from these.
[0139] A method for forming the first passive element 151 and the
second passive element 152 is hereinafter shown. Over ceramic
including aluminum oxide and silicon oxide which has been formed in
a sheet-like shape (which is a so-called green sheet) with a
thickness of 10 to 150 .mu.m, a conductive layer is formed with
metal having high conductivity such as gold, silver, copper, or
aluminum or alloy including plural elements selected from these
metals by a printing method. If necessary, a through-hole may be
formed in the green sheet and a plug may be formed by filling the
through-hole with conductive paste. The green sheet may be formed
by appropriately mixing ceramic, an organic resin, or the like
which forms the dielectric layer 110 of the patch antenna shown in
Embodiment Mode 1. A plurality of such green sheets where the
conductive layer has been printed can be stacked and pressured
while applying heat thereto, and then processed to have a
predetermined size. After that, the insulating layer and the
conductive layer can be baked at 800 to 1,300.degree. C., thereby
forming the first passive element 151 and the second passive
element 152. Moreover, a conductive layer may be formed at a side
surface of the insulating layer and connected to the conductive
layers formed in the respective layers.
[0140] By combining plural passive elements such as a capacitor, an
inductor, a resistor, and a wiring, it is possible to form an
antenna front-end module including a condenser (capacitor), a
diplexer, and a low pass filter; an isolator power amplifier module
including an isolator, a coupler, an attenuator, and a power
amplifier; a VCO (voltage control oscillator); a band pass filter
(BPF); a multilayer filter; a balun transformer; a dielectric
filter; a coupler; a resonator; and the like.
[0141] A power source circuit, a clock generating circuit, a data
modulation/demodulation circuit, a control circuit for controlling
another circuit, an interface circuit, a storage circuit, a bus, an
antenna, a central processing unit, a detection portion including a
detection element and a detection control circuit, and the like are
formed using the layer having a thin film transistor and the
passive element.
[0142] This embodiment mode can be appropriately combined with any
one of Embodiment Modes 1 to 3.
[0143] The wireless chip of this embodiment mode includes an
integrated circuit which is formed using a thin film transistor and
the passive element formed with a thin film pattern. Therefore,
since each circuit is formed using an element having an appropriate
function, the wireless chip has composite functions. By mounting
the wireless chip of the present invention onto a wiring substrate,
the number of mount parts can be decreased. Thus, the dimension of
the wiring substrate as well as the size of an electronic appliance
having the wiring substrate can be reduced.
Embodiment Mode 5
[0144] An embodiment mode of a wireless chip of the present
invention is shown in FIG. 5. FIG. 5 is a cross-sectional view of a
wireless chip. This embodiment mode will describe a structure of a
wireless chip in which plural layers having thin film transistors
which are fixed to each other by an anisotropic conductive
adhesive, a passive element, and a patch antenna are fixed to each
other by an anisotropic conductive adhesive, a conductive layer, or
the like.
[0145] Similarly to Embodiment Mode 2, the first layer 102 having a
thin film transistor is formed over the insulating substrate 101.
The first layer 102 having a thin film transistor and the second
layer 131 having a thin film transistor are fixed to each other by
the anisotropic conductive adhesive 133.
[0146] The first connection terminal formed on the surface of the
first layer 102 having a thin film transistor is electrically
connected to the second connection terminal formed on the surface
of the second layer having a thin film transistor, by the
conductive particles dispersed in the anisotropic conductive
adhesive 133.
[0147] Similarly to the first layer 102 having a thin film
transistor and the second layer 131 having a thin film transistor,
the second layer 131 having a thin film transistor and the third
layer 132 having a thin film transistor are fixed to each other by
the anisotropic conductive adhesive 134.
[0148] The third connection terminal formed on the surface of the
second layer 131 having a thin film transistor is electrically
connected to the fourth connection terminal formed on the surface
of the third layer 132 having a thin film transistor, by the
conductive particles dispersed in the anisotropic conductive
adhesive 134.
[0149] The passive element 150 and the third layer 132 having a
thin film transistor are fixed to each other by the anisotropic
conductive adhesive 135. Here, the passive element 150 is shown by
the first passive element 151 and the second passive element 152
similarly to Embodiment Mode 4. Moreover, the connection terminal
exposed at the surface of the third layer 132 having a thin film
transistor is electrically connected to the first connection
terminal of the passive element 150 by the conductive particles in
the anisotropic conductive adhesive. A conductive layer formed by
curing conductive paste may be used instead of the anisotropic
conductive adhesive 135.
[0150] Similarly to Embodiment Mode 4, the passive element 150 and
the antenna 103 are fixed to each other by the conductive layers
171 and 172. The power feeding layer 113 of the antenna 103, the
second connection terminal 168 of the passive element 150, the
second conductive layer 112 serving as a ground contact body of the
patch antenna, and the third connection terminal 169 of the passive
element are respectively connected electrically through the
conductive layers 171 and 172. The conductive layers 171 and 172
are formed by curing conductive paste.
[0151] This embodiment mode can be appropriately combined with any
one of Embodiment Modes 1 to 4.
[0152] The wireless chip of this embodiment mode includes an
integrated circuit which is formed using the thin film transistor
and the passive element formed with a thick film pattern.
Therefore, since each circuit is formed using an element having an
appropriate function, the wireless chip has composite functions. By
mounting the wireless chip of the present invention onto a wiring
substrate, the number of mount parts can be decreased. Thus, the
dimension of the wiring substrate as well as the size of an
electronic appliance having the wiring substrate can be
reduced.
Embodiment Mode 6
[0153] An embodiment mode of a wireless chip of the present
invention is shown in FIGS. 6A and 6B. FIG. 6A is a development
view of a wireless chip while FIG. 6B is a cross-sectional view
taken along a line A-B in FIG. 6A. This embodiment mode will
describe a structure of a wireless chip having a plurality of
antennas, and particularly a wireless chip having a patch antenna
and an antenna provided over a layer having a thin film
transistor.
[0154] Similarly to Embodiment Mode 1, the layer 102 having a thin
film transistor is formed over the insulating substrate 101. Over
the layer 102 having a thin film transistor, an interlayer
insulating layer 182 is formed. A first antenna 181 is formed over
the interlayer insulating layer 182. Over the first antenna 181, an
insulating layer 183 is formed, and a connection terminal 184 is
formed on a surface of the insulating layer 183.
[0155] The insulating layer 183 where the connection terminal 184
is exposed and the patch antenna serving as the second antenna 103
are fixed to each other by the anisotropic conductive adhesive 104.
Further, the connection terminal 184 and the power feeding layer
113 of the patch antenna are electrically connected by the
conductive particles dispersed in the anisotropic conductive
adhesive 104. The connection terminal 184 is electrically connected
to a first thin film transistor 185 formed in the layer 102 having
a thin film transistor. Moreover, a second thin film transistor 186
formed in the layer 102 having a thin film transistor is connected
to the first antenna 181. A conductive layer formed by curing
conductive paste may be used instead of the anisotropic conductive
adhesive.
[0156] The first antenna 181 is formed with a metal material
containing aluminum, copper, or silver. For example, a paste-like
composition of copper or silver can be formed by screen printing,
off-set printing, or ink-jet printing. Alternatively, an aluminum
film may be formed by sputtering and patterned by etching. Further,
an electroplating method or an electroless plating method may be
used.
[0157] Here, the first antenna 181 has a shape of a square coil as
shown in FIG. 8A.
[0158] The shape of the first antenna 181 is described with
reference to FIGS. 8A to 8C. FIGS. 8A to 8C are top views showing
the interlayer insulating layer 182 and an antenna formed over the
interlayer insulating layer 182. Although the first antenna 181 has
a square coil shape 181a as shown in FIG. 6A and FIG. 8A in this
embodiment mode, the shape is not limited to this. The antenna may
have a circular coil shape. Further, as shown in FIG. 8B, the
antenna can have a square loop shape 181b. The antenna can also
have a circular loop shape. Furthermore, as shown in FIG. 8C, the
antenna may have a linear-dipole shape 181c. Moreover, the antenna
may have a curved-dipole shape.
[0159] The present embodiment mode can be appropriately combined
with any one of Embodiment Modes 1 to 5.
[0160] By providing plural antennas in this way, a
multiband-compliant wireless chip capable of receiving many
electric waves with one wireless chip can be formed.
[0161] The wireless chip of this embodiment mode includes an
integrated circuit which is formed using a thin film transistor and
the passive element formed with a thick film pattern. Therefore,
since each circuit is formed using an element having an appropriate
function, the wireless chip has composite functions. By mounting
the wireless chip of the present invention onto a wiring substrate,
the number of mount parts can be decreased. Thus, the dimension of
the wiring substrate as well as the size of an electronic appliance
having the wiring substrate can be reduced.
Embodiment 1
[0162] This embodiment will describe a method for manufacturing a
thin film transistor which can be applied to a wireless chip of the
present invention, with reference to FIGS. 15A to 15H and FIGS. 16A
to 16H.
[0163] As shown in FIG. 15A, an insulating layer 402 serving as a
blocking film is formed over a substrate 401. Next, a crystalline
semiconductor layer 403 is formed by a means disclosed in Japanese
Patent Application Laid-Open No. 2002-313811. Specifically, after
heating an amorphous semiconductor layer to which a catalytic
element has been added, the amorphous semiconductor layer is
irradiated with laser light to form the crystalline semiconductor
layer 403. Next, an insulating layer is formed with an oxide film
in 1 to 5 nm thick over the crystalline semiconductor layer, and an
amorphous semiconductor layer to which noble gas has been added is
formed in 10 to 400 nm thick and heated, so as to form the
crystalline semiconductor layer 403 in which the concentration of
the catalytic element has decreased.
[0164] The amorphous semiconductor layer can be formed with a
semiconductor material obtained by a low-pressure thermal CVD
method, a plasma CVD method, a sputtering method, or the like, for
example silicon or alloy containing silicon as its main
component.
[0165] Next, after forming a thin oxide film with ozone water on a
surface of the crystalline semiconductor layer 403, resist is
applied and baked. After that, light-exposure and development are
conducted to form a mask. Next, the crystalline semiconductor layer
403 is etched into a desired shape using the mask, thereby forming
crystalline semiconductor layers 411 and 412 separated into desired
shapes. After forming the crystalline semiconductor layers 411 and
412, the mask is removed (refer to FIG. 15B).
[0166] Next, insulating layers 413 and 414 are formed with a
thickness of 1 to 10 nm on surfaces of the crystalline
semiconductor layers 411 and 412. The insulating layers 413 and 414
are formed on the surfaces of the crystalline semiconductor layers
411 and 412 by UV light irradiation in an oxygen atmosphere, a
thermal oxidation method, a process using ozone water including
hydroxy radical or hydrogen peroxide, or the like. Alternatively,
an insulating layer including silicon oxide is formed all over the
surface of the substrate by a plasma CVD method. Here, the
insulating layers 413 and 414 are formed with silicon oxide by
processing the surface of the crystalline semiconductor layer with
ozone water.
[0167] Next, as shown in FIG. 15C, after applying resist and baking
the resist, light-exposure and development are conducted to form
masks 415 and 416 over the insulating layers 413 and 414. Next,
high-concentration impurity regions 417 and 418 are formed by
doping the crystalline semiconductor layers 411 and 412 with an
impurity element. Here, the doping is conducted by using phosphorus
as the impurity element.
[0168] Next, as shown in FIG. 15D, after removing the masks 415 and
416, the crystalline semiconductor layer is heated. Here, the
catalytic element remaining in the crystalline semiconductor layers
411 and 412 are dispersed in the high-concentration impurity
regions 417 and 418 by heating the crystalline semiconductor layers
at 450 to 650.degree. C., so as to decrease the concentration of
the catalytic element in regions 421 and 422 of the crystalline
semiconductor layer that are covered with the masks.
[0169] Next, as shown in FIG. 15E, after removing the insulating
layers 413 and 414, an insulating layer 423 serving as a gate
insulating layer is formed on the surface of the substrate. Here,
an insulating layer 423 is formed with silicon oxide by a CVD
method.
[0170] Next, conductive layers 424 and 425 serving as a gate
electrode are formed over the insulating layer 423. The conductive
layers 424 and 425 can be formed by a similar method to the gate
electrode of the thin film transistor 106 shown in Embodiment Mode
1.
[0171] Next, as shown in FIG. 15F, after applying resist and baking
the resist, light-exposure and development are conducted to form a
mask 431 over the crystalline semiconductor layer 412. Then, the
crystalline semiconductor layer 411 is doped with an impurity
element using the conductive layer 424 as a mask, thereby forming a
low-concentration impurity region 432. Here, the doping is
conducted by using phosphorus as the impurity element.
[0172] Subsequently, as shown in FIG. 15G after removing the mask
431, a mask 441 is formed over the crystalline semiconductor layer
411 by the similar step to the mask 431. Next, the crystalline
semiconductor layer 412 is doped with an impurity element using the
conductive layer 425 as a mask, thereby forming a
high-concentration impurity region 443. Here, the doping is
conducted by using boron as the impurity element.
[0173] Next, after forming an insulating layer over the substrate,
a hydrogenation process of the crystalline semiconductor layer and
activation of the impurity in the low-concentration impurity region
and the high-concentration impurity region are conducted, thereby
forming source and drain regions 444 imparting n-type conductivity
and source and drain regions 445 imparting p-type conductivity, and
a low-concentration impurity region 446 imparting n-type
conductivity.
[0174] Next, after forming an insulating layer 451 over the
substrate, a part of the insulating layer 451 is removed to expose
the source and drain regions 444 and 445. Next, source and drain
electrodes 452 and 453 are formed.
[0175] By these steps, an n-channel thin film transistor 454 having
the source and drain regions 444 imparting n-type conductivity, a
channel formation region 447, the insulating layer 423 serving as a
gate insulating layer, the conductive layer 424 serving as a gate
electrode, and the source and drain electrodes 452 can be formed.
Moreover, a p-channel type thin film transistor 455 having the
source and drain regions 445 imparting p-type conductivity, a
channel formation region 448, the insulating layer 423 serving as a
gate insulating layer, the conductive layer 425 serving as a gate
electrode, and the source and drain electrodes 453 can be
formed.
[0176] Moreover, a CMOS circuit can be manufactured by connecting
the source or drain electrode of the n-channel type thin film
transistor 454 to the source or drain electrode of the p-channel
thin film transistor 455.
[0177] Next, an example of manufacturing steps of a thin film
transistor, which are different from the steps shown in FIGS. 15A
to 15H in point of the step of manufacturing the crystalline
semiconductor layers 411 and 412 and the insulating layer formed on
the surfaces thereof, is described with reference to FIGS. 16A to
16H.
[0178] As shown in FIG. 16A, the insulating layer 402 serving as a
blocking film is formed over the substrate 401 similarly to FIG.
15A. Next, the crystalline semiconductor layer 403 is formed.
[0179] Next, an insulating layer 461 is formed with a thickness of
1 to 10 nm on a surface of the crystalline semiconductor layer 403.
The insulating layer 461 can be formed by the similar step to the
insulating layers 413 and 414 shown in FIG. 15B.
[0180] Next, after applying resist and baking the resist,
light-exposure and development are conducted to form a mask. Next,
the insulating layer 461 and the crystalline semiconductor layer
403 are etched into desired shapes using the mask, thereby forming
insulating layers 462 and 463 and the crystalline semiconductor
layers 411 and 412 separated into desired shapes. After forming the
crystalline semiconductor layers 411 and 412, the mask is removed
(refer to FIG. 16B).
[0181] Next, after applying resist and baking the resist,
light-exposure and development are conducted to form masks 415 and
416 over the insulating layers 462 and 463.
[0182] Next, as shown in FIG. 16C, the crystalline semiconductor
layers 411 and 412 are doped with an impurity element to form
high-concentration impurity regions 417 and 418. Here, the doping
is conducted by using phosphorus as the impurity element.
[0183] Subsequently, as shown in FIG. 16D, after removing the masks
415 and 416, the crystalline semiconductor layers 411 and 412 are
heated. Here, the catalytic elements remaining in the crystalline
semiconductor layers are heated at 450 to 650.degree. C. to
disperse the catalytic elements in the high-concentration impurity
regions 417 and 418, so as to decrease the concentration of the
catalytic element in the regions in the crystalline semiconductor
layer that are covered with the masks.
[0184] Next, as shown in FIG. 16E, after removing the insulating
layers 462 and 463 over the crystalline semiconductor layers 411
and 412, the insulating layer 423 serving as the gate insulating
layer is formed on the surface of the substrate. Here, the
insulating layer 423 is formed with silicon oxide by a CVD
method.
[0185] By the steps shown in FIGS. 15E to 15H, the n-channel type
thin film transistor 454 and the p-channel thin film transistor 455
can be formed.
[0186] Since the step of decreasing the concentration of the
catalytic element in the crystalline semiconductor layer is
conducted twice in forming the thin film transistors 454 and 455 in
this embodiment, the concentration of the catalytic element in the
crystalline semiconductor layer is decreased. This makes it
possible to decrease the on-current of the thin film transistors
454 and 455.
[0187] This embodiment can be appropriately combined with any one
of the above Embodiment Modes.
Embodiment 2
[0188] The wireless chips of the present invention can be applied
to a wide range. For example, a wireless chip 20 can be provided to
vehicles (a bicycle 3901 (see FIG. 11B), cars, and the like),
foods, plants, cloths, general merchandise (a bag 3900 (see FIG.
11A) and the like), electronic appliances, inspection devices, and
the like. The electronic appliances include a liquid crystal
display device, an EL display device, a television device (also
referred to as a TV simply, a TV receiver, or a television
receiving machine), a mobile phone 3902 (see FIG. 11C), a printer,
a camera, a personal computer, a goggle 3903 (see FIG. 11D), a
speaker device 3904 (see FIG 11E), a headphone 3905 (see FIG. 1F),
a navigation device, an electronic key, and the like.
[0189] By providing the wireless chip 20 of the present invention
to the bag 3900, the bicycle 3901, and the like, it is possible to
detect where these exist by GPS. As a result, it is possible to
find stolen bicycles. Further, searching for missing people becomes
easy.
[0190] Further, by providing the wireless chip 20 in the mobile
phone 3902, sending and receiving of information and telephone
become possible.
[0191] Moreover, by providing the wireless chip of the present
invention in the earphone-equipped goggle 3903, the speaker device
3904, and the headphone 3905, it is possible to enjoy music played
with an audio device without a connection to the audio device using
a cord. Moreover, a compact hard disk (storage device) may be
provided together with the wireless chip 20 in the
earphone-equipped goggle 3903. Moreover, in the case that the
wireless chip 20 has a central processing unit, an audio signal
encoded in the audio device can be received, decoded, and amplified
with the earphone-equipped goggle 3903, the headphone 3905, and the
speaker device 3904. Therefore, the audio can be heard with high
confidentiality. Moreover, because the cord is not necessary, the
earphone-equipped goggle 3903 and the headphone 3905 can be mounted
easily, thereby the provision of the speaker device 3904 is easy.
It is preferable that, in this case, the speaker device be provided
with a battery.
[0192] The wireless chip of the present invention is fixed to a
product by mounting the wireless chip onto a print substrate,
pasting the wireless chip to a surface thereof, or embedding the
wireless chip therein. For example, if the product is a package
including an organic resin, the wireless chip is fixed to the
product by embedding the wireless chip into the organic resin. When
the wireless chip of the present invention is provided to products
such as foods, plants, animals, human bodies, cloths, general
merchandise, electronic appliances, and the like, systems such as
an inspection system can be made efficient.
[0193] Next, a mode of the electronic appliance to which the
wireless chip of the present invention has been mounted will be
described with reference to the drawings. The electronic appliance
to be exemplified here is a mobile phone, including cases 2700 and
2706, a panel 2701, a housing 2702, a print wiring substrate 2703,
an operation button 2704, a battery 2705, and the like (see FIG.
13). The panel 2701 is removably incorporated in the housing 2702
and the housing 2702 is fixed into the print wiring substrate 2703.
The shape and size of the housing 2702 changes appropriately in
accordance with the electronic appliance into which the panel 2701
is to be incorporated. On the print wiring substrate 2703, a
plurality of packaged semiconductor devices are mounted. The
semiconductor devices to be mounted on the print wiring substrate
2703 have any function selected from a controller, a central
processing unit, a memory, a power source circuit, an audio process
circuit, a send/receive circuit, and the like. Moreover, a wireless
chip 2710 of the present invention can be used.
[0194] The panel 2701 is connected to the print wiring substrate
2703 through a connection film 2708. The above panel 2701, housing
2702, and print wiring substrate 2703 are housed inside the cases
2700 and 2706 together with the operation button 2704 and the
battery 2705. A pixel region 2709 in the panel 2701 is provided so
as to be observed through an opening window provided in the case
2700.
[0195] It is to be noted that the shapes of the cases 2700 and 2706
are just an example of an exterior shape of the mobile phone, and
the electronic appliance of the present invention can be modified
into various modes in accordance with the function and intended
purpose.
[0196] Here, a block diagram of a high-frequency circuit typified
by a data modulation/demodulation circuit of a mobile phone is
described with reference to FIG. 14.
[0197] First, a step of sending a signal, which has been received
with an antenna, to a base band unit is described. The received
signal inputted into an antenna 301 is inputted into a low noise
amplifier (LNA) 303 from a duplexer 302 and amplified to be a
predetermined signal. The received signal inputted into the low
noise amplifier (LNA) 303 is inputted into a mixer 305 through a
band pass filter (BPF) 304. Into this mixer 305, an RF signal from
a mixture circuit 306 is inputted, and an RF signal component is
removed in a band pass filter 307 and demodulated. The received
signal outputted from the mixer 305 is inputted into a mixer 310
after being amplified in an amplifier 309 through a SAW filter 308.
Into the mixer 310, a local oscillation signal of a predetermined
frequency from a local oscillator circuit 311 is inputted and
converted into a desired frequency, and amplified into a
predetermined level in an amplifier 312. Then, the signal is sent
to a base band unit 313. The antenna 301, the duplexer 302, and a
low pass filter 328 are shown as an antenna front end module
331.
[0198] Next, a step of oscillating a signal, which has been sent
from a base band unit, with an antenna is described. The
transmission signal sent from the base band unit 313 is mixed with
the RF signal from the mixture circuit 306 by a mixer 321. This
mixture circuit 306 is connected to a voltage control oscillator
circuit (VCO) 322, and supplies an RF signal of the predetermined
frequency.
[0199] The transmission signal which has been RF-modulated by the
mixer 321 is amplified by a power amplifier (PA) 324 through a band
pass filter (BPF) 323. A part of the output from the power
amplifier (PA) 324 is taken out from a coupler 325 and adjusted to
have a predetermined level by an attenuator (APC) 326. Then, the
output is inputted into the power amplifier (PA) 324 again and
adjusted so that a transmission gain of the power amplifier (PA)
324 becomes constant. The transmission signal sent from the coupler
325 is inputted into the duplexer 302 through an isolator 327 for
backflow prevention and a low pass filter (LPF) 328, and sent from
the antenna 301 connected to the duplexer 302. The attenuator (APC)
326, the power amplifier (PA) 324, the coupler 325, and the
isolator 327 are shown as an isolator power amplifier module
332.
[0200] Since the wireless chip of the present invention has the
above high-frequency circuit, the number of parts can be reduced.
Therefore, the number of mount parts on the wiring substrate can be
decreased, so that the dimension of the wiring substrate can be
reduced. As a result, the mobile phone can be reduced in size.
[0201] Next, an example of an inspection device which can
wirelessly send detected functional data of a biological body is
described with reference to FIGS. 12A and 12B. An inspection device
3950 shown in FIG. 12A is provided with a wireless chip 3951 of the
present invention inside a capsule 3952 which is coated with a
protective layer. A space between the capsule 3952 and the wireless
chip 3951 may be filled with a filler 3953.
[0202] In an inspection device 3955 shown in FIG. 12B, the wireless
chip 3951 of the present invention is provided inside the capsule
3952 which is coated with a protective layer. An electrode 3956 of
the wireless chip is exposed at the outside of the capsule 3952. A
space between the capsule 3952 and the wireless chip 3951 may be
filled with the filler 3952.
[0203] The wireless chip 3951 in the inspection devices 3950 and
3955 is a wireless chip having the detection portion shown in FIG.
9C. The physical amount or the chemical amount is measured in the
detection portion to detect functional data of a biological body.
The detected result can be converted into signals and sent to a
reader/writer. In the case of detecting the physical amount such as
the amount of pressure, light, or acoustic wave, the inspection
device 3950 in which the electrode is not exposed at the outside of
the capsule 3952 as shown in FIG. 12A can be used. Moreover, in the
case of detecting temperature, flow rate, magnetism, acceleration,
humidity, a gas constituent, a chemical substance such as liquid
constituent like ions, and the like, the inspection device 3950 in
which the electrode 3956 is exposed at the outside of the capsule
3952 as shown in FIG. 12B is preferably used.
[0204] In the case of taking an image inside of a body with the use
of the inspection device, the inspection device may be provided
with a light-emitting device such as an LED or EL. This makes it
possible to take an image inside a body.
[0205] The protective layer provided on the surface of the capsule
preferably contains diamond-like carbon (DLC), silicon nitride,
silicon oxide, silicon oxynitride, or carbon nitride. The capsule
and the filler may be known ones selected appropriately. By
providing the protective layer onto the capsule, it is possible to
prevent the capsule and the wireless chip from dissolving or
changing in its property inside a body.
[0206] In order to send an inspection result from the inspection
device to the reader/writer voluntarily, the inspection device may
be provided with a known battery.
[0207] Next, a method of using the inspection device is described.
As shown in FIG. 12C, an examinee 3962 swallows the inspection
device 3950 or 3955 and let the inspection device 3950 or 3955 move
inside a cavity 3963 in a body. A result detected by the detection
portion in the wireless chip is sent to the reader/writer 3961
provided near the examinee. This result is received with the
reader/writer. As a result, it is possible to detect functional
data of the biological body of the examinee at this place without
collecting the wireless chip. Moreover, images inside the cavity of
the body and digestive organs can be taken.
[0208] Further, as shown in FIG. 12D, the result detected by the
detection portion in the wireless chip is sent to the reader/writer
3964 provided near the examinee by embedding the inspection device
3950 or 3955 inside the body of the examinee 3962. In this case,
the inspection device 3955 is embedded in the body so that the
electrode 3956 is in contact with a portion of the examinee's body
to be measured. The reader/writer receives this result. The
received result is recorded in a biological information management
computer and processed therein, so that the biological information
of the examinee can be managed. By providing the reader/writer 3964
in a bed 3960, it is possible to detect, in any time, biological
information of examinees who suffer from dysfunction and find it
difficult to move around and to manage medical states or health
conditions of the examinees.
[0209] This embodiment can be appropriately combined with any one
of the above Embodiment Modes.
Embodiment 3
[0210] This embodiment will describe a management system at
distribution of a container filled with a fluid from a manufacturer
to a delivery agent and the like, with reference to FIG. 17.
[0211] A management system of a container filled with a fluid shown
in FIG. 17 includes a supplier 501 and a container 502 filled with
a fluid. The supplier 501 is provided with an introduction tube 503
for introducing the fluid from the container, a supplying nozzle
504 for supplying the fluid to the outside, a first valve 505 for
controlling movement of the fluid introduced from the introduction
tube to the supplying nozzle, a second valve 506 which controls
movement of the fluid from the first valve to the supplying nozzle,
a reader/writer 507 which reads information stored in a wireless
chip, and a control portion 508 which controls the first valve
based on a signal sent from the reader/writer.
[0212] The container 502 is provided with the wireless chip 509
shown in Embodiment Modes and Embodiments as above. In the wireless
chip 509, information of the fluid filling the container 502, such
as a manufacturing date, a manufacturer, and a material are stored.
The information is managed at a management center 511 in the
manufacturer. The wireless chip 509 may be provided with a battery.
By providing a battery, the wireless chip can voluntarily send
information to the reader/writer. Further, the wireless chip 509
may have a detection portion. The information about the fluid
detected in the detection portion can be sent to the management
center of the manufacturer through the reader/writer and an
interface.
[0213] The container 502 is formed with metal, plastic, ceramic, or
the like.
[0214] As typical examples of the fluid filling the container 502,
liquid such as drinkable water, hot spring water, or daily life
water; gas such as propane gas, natural gas, hydrogen gas, oxygen
gas, or nitrogen gas; or gel-like fluid such as paste, ice cream,
or soup is given.
[0215] When the container 502 is connected to the supplier 501, the
reader/writer 507 of the supplier 501 reads information stored in
the wireless chip 509 of the container 502. Next, the information
read by the reader/writer is sent to the management center 511 of
the manufacturer through an interface 512. The interface 512 sends
the information stored in the wireless chip 509 to the outside and
serves as a terminal-side information sending/receiving means for
receiving a signal from the management center 511. Internet, a
telephone line, or the like can be used as the interface 512.
[0216] The information of the fluid sent from the interface 512 is
sent to a server 513 in the management center 511 of the
manufacturer. The information of the fluid, specifically a used-by
date, an expiration date, a manufacturer, and a material, are
judged at the server 513 in the management center. In the case that
the wireless chip 509 is provided with a detection portion, it is
possible to receive various information of the fluid like the
freshness, the temperature, and the like, in addition to the above
information of the fluid. Here, whether the fluid is supplied or
not is judged by judging the conformity of the choice of the
container 502 and the supplier 501, and the used-by date, the
expiration date, and the manufacturer of the fluid, based on a
shipment list 514 of the containers and a list 515 of the used
containers. In the management center 511 of the manufacturer, the
shipment list 514 of the containers and the list 515 of the used
containers are stored in the server 513.
[0217] Next, the judgment result on whether the fluid is supplied
or not is sent from the management center 511 to the supplier 501.
The transmission result from the management center is received with
the reader/writer 507 of the supplier 501. If the fluid is to be
supplied, a signal is sent to the control portion 508 of the
supplier, and the first valve 505 is opened. When a store clerk
opens the second valve 506, the fluid can be supplied to the
outside through the supplying nozzle 504. It is preferable that the
first valve 505 be automatically controllable, and the first valve
505 can be formed with an electromagnetic valve. It is preferable
that the second valve 506 be manually controllable or automatically
controllable and the second valve 506 can be formed with a manual
valve or an automatic valve. If the second valve 506 is
automatically controllable, the opening and closing of the valve is
controlled with an electromagnetic valve connected to a switch
operated by a store clerk.
[0218] By using such a system, the manufacturers can figure out the
amount of consumption of the fluid at the delivery agents. Thus,
the shipment management of the containers filled with the fluid can
be carried out automatically, which simplifies the step of shipping
and receiving orders at the delivery agents and the
manufacturers.
[0219] Since the opening and closing of the first valve 505 is
controlled by the information stored in the wireless chip 509, it
becomes possible to control the supplying of the fluid
automatically. Therefore, it can be prevented that the fluid beyond
the used-by date and the expiration date, the fluid which has been
deteriorated because of being in a poor state of preservation, and
the like are provided to purchasers.
[0220] Moreover, it is possible to discriminate the container 502
and the fluid filling the container 502 manufactured by one's
company from containers and fluid manufactured by the other
companies, based on the information stored in the wireless chip
509. Therefore, it is possible to prevent the fluid of the same
kind manufactured by the other company from being supplied in
connection with the supplier manufactured by the one's company.
This embodiment can be appropriately combined with any one of the
above Embodiment Modes. This application is based on Japanese
Patent Application serial no. 2005-064271 filed in Japan Patent
Office on Mar. 8, in 2005, the contents of which are hereby
incorporated by reference.
* * * * *