U.S. patent application number 11/353359 was filed with the patent office on 2006-08-31 for sealed capacitive sensor.
Invention is credited to William Hunt, Eamon Hynes, Oliver Kierse, Peter G. Meehan, John O'Dowd.
Application Number | 20060191351 11/353359 |
Document ID | / |
Family ID | 36930851 |
Filed Date | 2006-08-31 |
United States Patent
Application |
20060191351 |
Kind Code |
A1 |
Meehan; Peter G. ; et
al. |
August 31, 2006 |
Sealed capacitive sensor
Abstract
A sealed capacitive sensor includes a substrate having a
diaphragm forming a first plate of a capacitor; a second fixed
plate of the capacitor spaced from the diaphragm and defining a
predetermined dielectric gap and a sealing medium connecting
together the substrate and fixed plate in an integrated structure
and hermetically sealing the gap.
Inventors: |
Meehan; Peter G.; (Limerick,
IE) ; Hunt; William; (Co Limerick, IE) ;
Hynes; Eamon; (Limerick, IE) ; O'Dowd; John;
(Co Limerick, IE) ; Kierse; Oliver; (Ballina,
IE) |
Correspondence
Address: |
Iandiorio & Teska
260 Bear Hill Road
Waltham
MA
02451-1018
US
|
Family ID: |
36930851 |
Appl. No.: |
11/353359 |
Filed: |
February 14, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60656238 |
Feb 25, 2005 |
|
|
|
Current U.S.
Class: |
73/780 |
Current CPC
Class: |
G01L 9/0072 20130101;
G01L 9/0073 20130101; G01L 1/148 20130101; H01L 2224/73257
20130101; G01L 1/142 20130101; G01L 9/0075 20130101; H01L
2224/48091 20130101; H01L 2224/48091 20130101; H01L 2924/00014
20130101 |
Class at
Publication: |
073/780 |
International
Class: |
G01B 7/16 20060101
G01B007/16 |
Claims
1. A sealed capacitive sensor comprising: a substrate having a
diaphragm forming a first plate of a capacitor; a second fixed
plate of the capacitor spaced from said diaphragm ad defining a
dielectric gap; and a sealing medium connecting together said
substrate and fixed plate in an integral structure and hermetically
sealing said gap.
2. The sealed capacitive sensor of claim 1 in which said substrate
includes ceramic.
3. The sealed capacitive sensor of claim 1 in which said substrate
includes silicon.
4. The sealed capacitive sensor of claim 1 in which said fixed
plate includes silicon.
5. The sealed capacitive sensor of claim 1 in which said sealing
medium includes a frit.
6. The sealed capacitive sensor of claim 5 in which said frit
includes a glass frit.
7. The sealed capacitive sensor of claim 1 in which at least one of
said first and fixed plates includes a metal layer
8. The sealed capacitive sensor of claim 1 in which at least one of
said first and fixed plates includes silicon.
9. The sealed capacitive sensor of claim 8 in which each of said
silicon plates is doped.
10. The sealed capacitive sensor of claim 1 in which said fixed
plate bears an active electronic circuit associated with said
capacitive sensor.
11. The sealed capacitive sensor of claim 1 in which said fixed
plate bears on a separate chip, an active electronic circuit
associated with said capacitive sensor.
12. The sealed capacitive sensor of claim 1 1 in which there is an
insulation layer between said active electronic circuit and said
fixed plate.
13. The sealed capacitive sensor of claim 1 in which said fixed
plate includes a recess which defines at least a part of the gap
dimension.
14. The sealed capacitive sensor of claim 1 in which the sealing
medium defines at least a part of the gap dimension.
15. The sealed capacitive sensor of claim 1 in which said fixed
plate is electrically accessed through a wire bonding lead.
16. The sealed capacitive sensor of claim 1 in which said first
plate is electrically accessed through a conductor buried in the
substrate traversing said sealing medium.
17. The sealed capacitive sensor of claim 1 in which said fixed
plate includes a second recess for housing an active electric
circuit associated with said capacitive sensor.
18. The sealed capacitive sensor of claim 17 further including a
cover and second sealing medium for connecting said cover to said
fixed plate and hermetically sealing said second recess.
19. The sealed capacitive sensor of claim 18 in which said second
sealing medium includes a frit.
20. The sealed capacitive sensor of claim 18 in which said second
sealing medium includes a glass frit.
21. The sealed capacitive sensor of claim 1 further including an
over mold covering said fixed plate and attached to said substrate.
Description
RELATED APPLICATIONS
[0001] This invention claims the benefit of U.S. Provisional
Application No. 60/656,238, filed Feb. 25, 2005, incorporated by
reference herein.
FIELD OF THE INVENTION
[0002] This invention relates to a sealed capacitive sensor.
BACKGROUND OF THE INVENTION
[0003] In conventional capacitive sensors the fixed plate,
typically silicon, is connected to the diaphragm, typically formed
in a ceramic substrate, using solder balls. One problem with this
is that the solder balls are typically about 150-200 .mu.m in
height. This defines at least in part the dimension of the
capacitive gap. With such a large height the gap, too, is large and
this reduces the sensitivity. Therefore the diaphragm has to
deflect more under pressure to obtain the desired sensitivity. To
accommodate this the diaphragm must be made thinner to get the
desired sensitivity. This makes the diaphragm more susceptible to
cracking and fracturing. One solution is to provide holes to
receive the solder balls and thus reduce their effective height.
But the addition of these holes adds considerable cost and must be
done extremely accurately. Even assuming a proper balance between
solder ball height and diaphragm thickness can be obtained, the
solder balls themselves contribute to inaccuracy as they may
fracture, break and are subject to creep from temperature and
time.
[0004] Another shortcoming is that solder balls do not hermetically
seal the gap: contaminants and conditions such as changes in
ambient pressure can effect the gap and change the capacitance,
independent of any change in the parameter being measured by
displacement of the diaphragm. To accommodate this the entire
device can be placed in a sealed package but this, too, adds to the
cost.
BRIEF SUMMARY OF THE INVENTION
[0005] It is therefore an object of this invention to provide an
improved sealed capacitive sensor.
[0006] It is a further object of this invention to provide such an
improved sealed capacitive sensor which provides a hermetically
sealed dielectric gap.
[0007] It is a further object of this invention to provide such an
improved sealed capacitive sensor which is more robust, reliable
and accurate, yet lower in cost.
[0008] It is a further object of this invention to provide such an
improved sealed capacitive sensor in which the dielectric gap is
not vulnerable to fracture, breakage or creep of solder balls.
[0009] It is a further object of this invention to provide such an
improved sealed capacitive sensor which is less susceptible to
contamination.
[0010] The invention results from the realization that a simpler,
less costly, more accurate, reliable and robust capacitive sensor
can be achieved by using a sealing medium such as a frit or glass
frit to both connect together and hermetically seal a substrate
having a diaphragm forming a first plate of a capacitor and a
second fixed plate of a capacitor spaced from the diaphragm and
defining a predetermined dielectric gap.
[0011] The subject invention, however, in other embodiments, need
not achieve all these objectives and the claims hereof should not
be limited to structures or methods capable of achieving these
objectives.
[0012] This invention features a sealed capacitive sensor including
a substrate having a diaphragm forming a first plate of a capacitor
and a second fixed plate of the capacitor spaced from the diaphragm
and defining a predetermined dielectric gap. There is a sealing
medium which connects together the substrate and the fixed plate in
an integral structure and hermetically seals the gap.
[0013] In a preferred embodiment, the substrate may include a
ceramic, or it may include silicon. The fixed plate may include
silicon. The sealing medium may be a frit; it may be a glass frit.
At least one of the first and fixed plates may include a metal
layer. At least one of the first and fixed plates may include
silicon. Each of the silicon plates may be doped. The fixed plates
may bear an active electronic circuit associated with the
capacitive sensor. The active electronic circuit may be on a
separate chip. There may be an insulation layer between the active
electronic circuit and the fixed plate. The fixed plate may include
a recess which defines at least a part of the gap dimension. The
sealing medium may define at least a part of the gap dimension. The
fixed plate may be electrically accessed through a wire bonding
lead. The first plate may be electrically accessed through a
conductor buried in the substrate traversing the sealing medium.
The fixed plate may include a second recess for housing an active
electric circuit associated with a capacitive sensor. There may be
a cover and a second sealing medium for connecting the cover to the
fixed plate and hermetically sealing the second recess. The sealing
medium may include a frit; it may be a glass frit. There may be an
over mold covering the fixed plate and attached to the
substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Other objects, features and advantages will occur to those
skilled in the art from the following description of a preferred
embodiment and the accompanying drawings, in which:
[0015] FIG. 1 is a side sectional diagrammatic view of a sealed
capacitive sensor according to this invention;
[0016] FIG. 2 is a top view of the sealed capacitive sensor of FIG.
1;
[0017] FIG. 3 is a view similar to FIG. 1 with the substrate
diaphragm reinforced;
[0018] FIG. 4 is a view similar to FIG. 1 with the active circuit
as a silicon on insulation layer;
[0019] FIG. 5 is a view similar to FIG. 4 without a recess in the
fixed plate and the gap dimensions defined solely by the sealing
medium;
[0020] FIG. 6 is a view similar to FIG. 3 with metal plates on the
fixed plate and both sides of the diaphragm.
[0021] FIG. 7 is a view similar to FIG. 1 made entirely of
silicon;
[0022] FIG. 8 is a side sectional diagrammatic view of a sealed
capacitive sensor according to this invention with a second recess
for housing associated circuitry or a second sensor e.g. an
accelerometer.
[0023] FIG. 9 is a view similar to FIG. 1 showing both upper and
lower moats or wells and buried conductor traversing the sealing
medium;
[0024] FIG. 10 is a view similar to FIG. 9 showing barrier walls in
place of wells or moats; and
[0025] FIG. 11 is a view similar to FIG. 1 showing the active
circuit borne by the fixed plate as a separate chip.
DISCLOSURE OF THE PREFERRED EMBODIMENT
[0026] Aside from the preferred embodiment or embodiments disclosed
below, this invention is capable of other embodiments and of being
practiced or being carried out in various ways. Thus, it is to be
understood that the invention is not limited in its application to
the details of construction and the arrangements of components set
forth in the following description or illustrated in the drawings.
If only one embodiment is described herein, the claims hereof are
not to be limited to that embodiment. Moreover, the claims hereof
are not to be read restrictively unless there is clear and
convincing evidence manifesting a certain exclusion, restriction,
or disclaimer.
[0027] There is shown in FIG. 1, a sealed capacitive sensor 10
including a ceramic substrate 12, for example, Al.sub.2O.sub.3
having a flexible diaphragm 14 and a fixed plate silicon die 16
spaced from diaphragm 14 defining a dielectric gap 18. Substrate 12
is connected to fixed plate or die 16 to form an integral structure
by means of a sealing medium 20, such as, a frit or glass frit, for
example, a glass frit sold by Ferroelectronics Material Systems,
Inc. of Vista, Calif., under the name of Seal Glass Paste, DL11036
Model FX-11-036. Other sealing mediums can be used, such as organic
or inorganic adhesives, for example, Ablestik 660 available from
Ablestick Laboratories, Rancho Domingues, Calif. Sealing medium or
frit 20 not only connects together fixed plate 16 and substrate 12,
but it also forms a hermetic seal about gap 18 so that no
contaminates from the outside can enter and no spurious changes of
pressure can enter that would change the normal conditions in the
gap. In this way only the parameter, such as, pressure or force
which is being sensed by the capacitive sensor 10 will flex
diaphragm 14 and change the dimension of gap 18, thereby, changing
the capacitance which change is used as an indication of the
parameter being measured.
[0028] In addition to diaphragm 14 the first plate of the capacitor
includes a metal layer 22 which may be diffused into the ceramic
which extends out through or under the frit 20 to trace 28 for
connection to circuitry this may be seen as a top view in FIG. 2.
Fixed plate 16, FIG. 1, formed from a silicon die forms the plate
of the capacitor doped or undoped and may in addition in some cases
have its own metal plate 30. Although not a necessary limitation of
the invention a recess 32 is formed in fixed plate 16. In this case
dimension 34 of gap 18 is determined by the size of recess 32, the
sealing medium or frit 20 and the height, small though it be, of
metal layer 22. An active circuit 36, such as, signal processing
circuitry, accelerometers and the like associated with the
capacitive sensor 10 may be fabricated right in the silicon die of
fixed plate 16. Metal layer 22 may be circular or another shape as
required. Ceramic substrate 12 with diaphragm 14 may be 100 to 200
microns thick for sensing tire pressures and perhaps approximately
400 microns thick for sensing braking pressure.
[0029] Ceramic substrate 12a, FIG. 3, may be formed with
reinforcing supports 40, 42 where necessary. Alternatively, ceramic
12a can be formed as a unit with reinforcing supports 40, 42 and
have portion 44 etched or machined away to the same effect.
Alternatively, diaphragm 44 and supports 40,42 may be made integral
and co-fired with substrate 12. Even though gap 18 is fully
hermetically sealed and substrate 12 is well secured to silicon die
fixed plate 16 by sealing medium frit 20, a further protection may
be added in the nature of a over mold or cover, such as, a glob top
or plastic 50, FIG. 3. This may be made of any suitable material
such as DYM 9001-E-v3.1 from DYMAX Corporation, 51 Greenwoods Road,
Torrington, Conn. 06790 or Sumitomo 6300H G770 from Sumitomo
Corporation.
[0030] The active circuit need not be fabricated directly on fixed
plate silicon die 16, FIG. 4, it may be a silicon on insulation
(SOI) circuit 36b mounted on insulation 52 on die 16. Although thus
far FIGS. 1 through 4 depict gap 18 as formed at least partially by
recess 32, this is not a necessary limitation of the invention, for
as shown in FIG. 5, the full dimension 34 of gap 18 may be defined
by the height of the sealing medium, frit 20. Various layers of
metal 22, 30 and layer 60 on diaphragm 14, FIG. 6, may be used to
modify the mechanical (stiffness) and electrical (conductivity)
responses of capacitive sensor 10d. Although thus far the substrate
12 has been indicated as a ceramic, this is not a limitation of the
invention, for as shown in FIG. 7, substrate 12 in sensor 10e may
be silicon, just as fixed plate silicon die 16. In that case, metal
plate 22 would be optional since now the silicon in substrate 12 as
well as that in die 16 can act as a conductor plate of the
capacitor. In that case, FIG. 7, metal plate conductor 22 is
optional.
[0031] Capacitive sensor 10f may be formed as a dual recess device,
FIG. 8, having a second recess 70 in which is disposed active
circuit 36 and or other sensors, for example, accelerometer or
capacitive sensors . Active circuit 36 may be connected to metal
plate conductor 30 by means of via 72. Trace 74 passing under frit
76 to bond wire 28 and eventually to trace lead 24. Frit 76 acts to
fix cover 78, made of for example ceramic or Kovar, to fixed plate
silicon die 16f and hermetically seal second recess 70. Sealing
medium 76 may be a frit, such as, a glass frit as used for sealing
medium 20. The connection between metal plate conductor 22 and
trace conductor 24 may use a buried conductor 80, FIG. 9, which
traverses and passes beneath sealing medium 20 to improve the
hermetic seal since the frit seals better to the ceramic 12 than to
the metal 22, 24. Also shown in FIG. 9 are the use of wells or
moats 90, 92 in fixed plate silicon die 16 and/or wells and moats
94, 96 in ceramic 12 to prevent spread of the frit during sealing.
The material may be removed in either case in any suitable manner
to create individual wells or a continuous moat to prevent the
glass frit from moving, wicking, or spreading into the sensing area
where it would interfere with the accuracy of the sensor.
Alternatively, instead of moats or wells, barrier walls 98, FIG.
10, may be used for the same purpose. The walls, moats and wells
are disclosed in more detail in co-pending application, U.S. Patent
Application, entitled, IMPROVED CAPACITIVE SENSOR AND METHOD OF
FABRICATING, by Meehan et al. (AD-444J), filed on even date
herewith, which is herein incorporated in its entirety by this
reference. If the active circuit 36, FIG. 11, is quite expensive as
formed on silicon die 16, it may be more inexpensively produced on
its own chip 110, FIG. 11, and then, for example, flip chip bonded
using solder bumps 112 directly to silicon die 16. That contact may
be sufficient or a via 114, for example, may be used to
interconnect active circuit 36 with fixed plate conductor 30.
Throughout here specific techniques of connections, such as, bond
wires and vias, metal layers and traces, have been shown but these
are not limitations of the invention, as any of the connection
devices shown as well as other devices, not shown, may be used to
interconnect the various components. The unit may also be
incorporated into a ceramic package.
[0032] Although specific features of the invention are shown in
some drawings and not in others, this is for convenience only as
each feature may be combined with any or all of the other features
in accordance with the invention. The words "including",
"comprising", "having", and "with" as used herein are to be
interpreted broadly and comprehensively and are not limited to any
physical interconnection. Moreover, any embodiments disclosed in
the subject application are not to be taken as the only possible
embodiments.
[0033] In addition, any amendment presented during the prosecution
of the patent application for this patent is not a disclaimer of
any claim element presented in the application as filed: those
skilled in the art cannot reasonably be expected to draft a claim
that would literally encompass all possible equivalents, many
equivalents will be unforeseeable at the time of the amendment and
are beyond a fair interpretation of what is to be surrendered (if
anything), the rationale underlying the amendment may bear no more
than a tangential relation to many equivalents, and/or there are
many other reasons the applicant can not be expected to describe
certain insubstantial substitutes for any claim element
amended.
[0034] Other embodiments will occur to those skilled in the art and
are within the following claims.
* * * * *