U.S. patent application number 11/390128 was filed with the patent office on 2006-07-27 for semiconductor device and method for manufacturing semiconductor device.
This patent application is currently assigned to FUJITSU LIMITED. Invention is credited to Toru Anezaki.
Application Number | 20060163678 11/390128 |
Document ID | / |
Family ID | 34509571 |
Filed Date | 2006-07-27 |
United States Patent
Application |
20060163678 |
Kind Code |
A1 |
Anezaki; Toru |
July 27, 2006 |
Semiconductor device and method for manufacturing semiconductor
device
Abstract
A semiconductor device is provided which has insulating film
side wall spacers having a barrier function. The semiconductor
device comprises: a gate oxide film and a gate electrode formed on
and above a semiconductor substrate; source/drain regions formed in
the semiconductor substrate; and first laminated side wall spacers
having two or more layers and formed on side walls of the gate
electrode, the first laminated side wall spacers including a
nitride film as a layer other than an outermost layer, the
outermost layer being made of an oxide film or an oxynitride film
and having a bottom surface contacting the semiconductor substrate,
the gate oxide film or a side wall spacer layer other than the
nitride film.
Inventors: |
Anezaki; Toru; (Kawasaki,
JP) |
Correspondence
Address: |
WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP
1250 CONNECTICUT AVENUE, NW
SUITE 700
WASHINGTON
DC
20036
US
|
Assignee: |
FUJITSU LIMITED
Kawasaki
JP
|
Family ID: |
34509571 |
Appl. No.: |
11/390128 |
Filed: |
March 28, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
PCT/JP03/13582 |
Oct 23, 2003 |
|
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11390128 |
Mar 28, 2006 |
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Current U.S.
Class: |
257/411 ;
257/E21.209; 257/E21.337; 257/E21.438; 257/E21.624; 257/E21.625;
257/E21.626; 257/E21.645; 257/E21.689; 257/E27.081; 257/E29.266;
257/E29.302; 257/E29.309 |
Current CPC
Class: |
H01L 27/115 20130101;
H01L 21/823456 20130101; H01L 21/823468 20130101; H01L 27/105
20130101; H01L 27/11573 20130101; H01L 27/11526 20130101; H01L
27/1052 20130101; H01L 21/2652 20130101; H01L 29/792 20130101; H01L
29/665 20130101; H01L 29/66545 20130101; H01L 29/40117 20190801;
H01L 27/11546 20130101; H01L 29/7833 20130101; H01L 29/6653
20130101; H01L 29/6656 20130101; H01L 29/4983 20130101; H01L
29/66825 20130101; H01L 29/40114 20190801; H01L 21/823462 20130101;
H01L 29/66833 20130101; H01L 29/7881 20130101; H01L 29/6659
20130101 |
Class at
Publication: |
257/411 |
International
Class: |
H01L 29/94 20060101
H01L029/94 |
Claims
1. A semiconductor device comprising: a semiconductor substrate; a
first gate oxide film formed on said semiconductor substrate; a
first gate electrode formed on said first gate oxide film; first
source/drain regions formed in said semiconductor substrate on both
sides of said first gate electrode; and first laminated side wall
spacers having two or more layers and formed on side walls of said
first gate electrode, said first laminated side wall spacers
including a nitride film as a layer other than an outermost layer,
the outermost layer being made of an oxide film or an oxynitride
film and having a bottom surface contacting said semiconductor
substrate, said first gate oxide film, or a side wall spacer layer
other than said nitride film.
2. The semiconductor device according to claim 1, further
comprising a first silicide layer formed on said first source/drain
regions.
3. The semiconductor device according to claim 2, wherein said
first silicide layer is a cobalt silicide layer.
4. The semiconductor device according to claim 1, wherein the
outermost layer of said first laminated side wall spacers covers
side walls of said first gate oxide film, and directly contacts
said semiconductor substrate.
5. The semiconductor device according to claim 1, wherein a bottom
of the outermost layer of said first laminated side wall spacers
contacts said first gate oxide film, and the oxide film has an
etching rate faster than an etching rate of said first gate oxide
film.
6. The semiconductor device according to claim 1, wherein said
nitride film is an intermediate layer of said first laminated side
wall spacers, and said first laminated side wall spacers include an
oxide film or an oxynitride film formed between said nitride film
and said first gate electrode and between said nitride film and
said first gate oxide film.
7. The semiconductor device according to claim 6, wherein the
outermost layer of said first side wall spacers covers side walls
of said first gate oxide film and directly contacts said
semiconductor substrate.
8. The semiconductor device according to claim 6, wherein the
outermost layer of said first laminated side wall spacers has a
bottom contacting said first gate oxide film, and the oxide film
has an etching rate faster than an etching rate of said first gate
oxide film.
9. The semiconductor device according to claim 1, further
comprising: a laminated gate electrode structure formed on said
semiconductor substrate, comprising: a tunneling insulating film
formed on said semiconductor substrate; a floating gate electrode
formed on said tunneling insulating film; an insulating film formed
on said floating gate electrode; and a control gate electrode
formed on said insulating film; second source/drain regions formed
in said semiconductor substrate on both sides of said laminated
gate electrode structure; and second laminated side wall spacers
having three or more layers, formed on side walls of said laminated
gate electrode structure, and including a nitride film as an
intermediate layer not contacting said semiconductor substrate.
10. The semiconductor device according to claim 9, wherein said
second laminated side wall spacers include a thermally oxidized
layer as an innermost layer.
11. The semiconductor device according to claim 9, wherein said
second laminated side wall spacers include an oxide film or an
oxynitride film as the outermost layer whose bottom contacts said
semiconductor substrate.
12. A semiconductor device comprising: a semiconductor substrate; a
first gate oxide film formed on said semiconductor substrate; a
first gate electrode formed on said first gate oxide film; first
source/drain regions formed in said semiconductor substrate on both
sides of said first gate electrode; first laminated side wall
spacers formed on side walls of said first gate electrode; a
laminated gate electrode structure formed on said semiconductor
substrate, comprising: a tunneling insulating film formed on said
semiconductor substrate; a floating gate electrode formed on said
tunneling insulating film; an insulating film formed on said
floating gate electrode; and a control gate electrode formed on
said insulating film; second source/drain regions formed in said
semiconductor substrate on both sides of said laminated gate
electrode structure; and second side wall spacers having three or
more layers, formed on side walls of said laminated gate electrode
structure, and including a nitride film as an intermediate layer
not contacting said semiconductor substrate, and an outermost side
wall spacer layer directly contacting said semiconductor
substrate.
13. The semiconductor device according to claim 12, wherein said
first side wall spacers are made of same layers as outermost side
wall spacer layers of said second side wall spacers.
14. The semiconductor device according to claim 12, wherein said
first side wall spacers are laminated side wall spacers having two
or more layers, said first side wall spacers including a nitride
film as a layer other than an outermost layer, the outermost layer
being made of an oxide film or an oxynitride film and having a
bottom surface contacting said semiconductor substrate, said first
gate oxide film or a side wall spacer layer other than said nitride
film.
15. The semiconductor device according to claim 12, wherein the
nitride film as an intermediate layer of said second side wall
spacers is a silicon nitride film formed by LP-CVD.
16. A method for manufacturing a semiconductor device, comprising
the steps of: (a) forming a gate insulating film on a semiconductor
substrate; (b) forming a conductive film on said gate insulating
film; (c) etching said conductive film to form a gate electrode and
expose said gate insulating film; (d) depositing a first insulating
film having an etching selectivity relative to said gate insulating
film, on a whole surface of said semiconductor substrate, and
leaving first side wall spacer layers on side walls of said gate
electrode by anisotropic etching; (e) etching said gate insulating
film to expose a surface of said semiconductor substrate; (f)
depositing a second insulating film on the whole surface of said
semiconductor substrate, and leaving second side wall spacers on
side walls of said first side wall spacers by anisotropic etching;
(g) implanting ions via said first and second side wall spacers to
form source/drain regions; (h) exposing the surface of said
semiconductor substrate by using dilute hydrofluoric acid solution;
and (i) forming a silicide layer on the exposed semiconductor
substrate surface.
17. The method for manufacturing a semiconductor device according
to claim 16, further comprising the step of: (j) depositing a third
insulating layer on the whole surface of said semiconductor
substrate between said steps (c) and (d), wherein said step (d)
anisotropically etches said first and third insulating layers.
18. A method for manufacturing a semiconductor device comprising
the steps of: (a) forming a gate insulating film on a semiconductor
substrate; (b) forming a conductive film on said gate insulating
film; (c) etching said conductive film to form a gate electrode and
expose said gate insulating film; (d) depositing a first insulating
film having an etching selectivity relative to said gate insulating
film, on a whole surface of said semiconductor substrate, and
leaving first side wall spacer layers on side walls of said gate
electrode by anisotropic etching; (e) depositing a second
insulating film having an etching rate faster than an etching rate
of said gate insulating film, on the whole surface of said
semiconductor substrate, and leaving second side wall spacer layers
on side walls of said first side wall spacers by anisotropic
etching; (f) etching said gate insulating film to expose a surface
of said semiconductor substrate; (g) implanting ions via said first
and second side wall spacers to form source/drain regions; (h)
exposing the surface of said semiconductor substrate by using
dilute hydrofluoric acid solution; and (i) forming silicide layers
on the exposed semiconductor substrate surface.
19. The method for manufacturing a semiconductor device according
to claim 18, further comprising the step of: (j) depositing a third
insulating layer on the whole surface of said semiconductor
substrate between said steps (c) and (d), wherein said step (d)
anisotropically etches said first and third insulating layers.
20. A method for manufacturing a semiconductor device comprising
the steps of: (a) forming a tunneling insulating film, a floating
gate electrode film and an insulating film on an area of a
semiconductor substrate, and pattering said insulating film, said
floating gate electrode film and said tunneling insulating film to
form a floating gate electrode structure; (b) forming a gate
insulating film in another area of said semiconductor substrate;
(c) depositing a conductive film and an etch stopper film covering
said floating gate electrode structure and said gate insulating
film; (d) etching said etch stopper film and said conductive film
to form a laminated gate electrode structure of a non-volatile
memory; (e) forming a leak preventive first insulating film on side
walls of said laminated gate electrode structure; (f) depositing a
silicon nitride film by LP-CVD covering said leak preventive first
insulating film, and leaving first side wall spacers on side walls
of said laminated gate electrode structure by anisotropic etching;
(g) removing said etch stopper film; (h) patterning said conductive
film in said another area to form a gate electrode structure; (i)
depositing a second insulating film on a whole surface of said
semiconductor substrate, and leaving second side wall spacers on
side walls of said laminated gate electrode structure and said gate
electrode structure by anisotropic etching; (j) exposing a surface
of said semiconductor substrate by using dilute hydrofluoric acid
solution; and (k) forming silicide layers on the exposed
semiconductor substrate surface.
21. The method for manufacturing a semiconductor device according
to claim 20, wherein said step (j) forms laminated side wall
spacers including a silicon nitride film as an intermediate layer.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is based on and claims priority of
PCT/JP2003/013582 filed on Oct. 23, 2003, the entire contents of
which are incorporated herein by reference.
TECHNICAL FIELD
[0002] The present invention relates to a semiconductor device and
a method for manufacturing the semiconductor device, and more
particularly to a highly integrated semiconductor device having
side wall spacers with a barrier function and a method of
manufacturing the semiconductor device.
BACKGROUND ART
[0003] Since self-aligned contacts (SAC) are used recent years
because of micro patterning requirements, side wall spacers of
silicon nitride film are used. A silicon nitride film is an
insulating film with a barrier function capable of functioning as
an etching stopper having etching selectivity relative to an
interlayer insulating film made of a silicon oxide film.
[0004] Device sizes are reduced due to high integration and
miniaturization of MOSFETs. As the pn junction depth of
source/drain regions becomes shallow, resistance values have a
tendency of becoming large. In order to reduce the resistance of
the source/drain regions, it is effective to form silicide layers
on the source/drain regions.
[0005] FIGS. 7A to 7E are cross sectional views illustrating main
processes of a conventional semiconductor device manufacture
method.
[0006] As shown in FIG. 7A, an isolation trench is formed in the
surface layer of a silicon substrate 11 by etching, and an
insulator is embedded in the trench to form a shallow trench
isolation (STI) 12. Local oxidation of silicon (LOCOS) may be used
instead of STI. The surfaces of active regions defined by the
isolation region are thermally oxidized to form gate oxide films
13. A polysilicon film is deposited on the gate oxide film 13 by
chemical vapor deposition (CVD) and etched by using a resist
pattern to form a gate electrode 14.
[0007] In etching the gate electrode 14, mixture gas of HBr and
Cl.sub.2 is used as etching gas to perform reactive etching which
provides a high selection ratio between greatly different etching
rates of silicon and the silicon oxide film. This etching provides
an etching rate of the silicon oxide film very slower than that of
silicon. Therefore, while polysilicon is etched, the gate oxide
film 13 is etched only slightly and etching stops. Etching the
polysilicon film is terminated in the state that the gate oxide
film 13 is left on the surface of the active region. Damages are
therefore hard to be formed in the surface layer of the active
regions.
[0008] For example, n-type impurity ions are implanted by using the
patterned gate electrode 14 as a mask to form extension regions 15
of source/drain regions. The extension regions 15 are formed to
have a shallow junction depth in order to prevent
punch-through.
[0009] As shown in FIG. 7B, a silicon nitride film is deposited by
CVD, covering the gate electrode 14, and etched-back to remove the
silicon nitride film on flat surfaces. Side wall spacers 16 of the
silicon nitride film are left only on the side walls of the gate
electrode 14. By using CHF.sub.3 as main etching gas, etching can
be stopped in the state that the gate oxide film 13 is left.
Therefore, it is possible to prevent damages from being formed in
the active region surface.
[0010] As shown in FIG. 7C, the gate oxide film 13 exposed on both
sides of the side wall spacers is removed by using dilute
hydrofluoric acid solution. The side wall spacers 16 of silicon
nitride are not etched. In this case, not only the exposed gate
oxide film 13 is removed, but also the gate oxide film 13 under the
side wall spacers 16 are laterally etched and retracted toward the
gate electrode direction. Therefore, the side wall spacers 16 have
an overhang shape.
[0011] As shown in FIG. 7D, by using the gate electrode 14 and side
wall spacers 16 as a mask, for example, n-type impurity ions are
implanted to form source/drain regions 17 having deep junction
depth. In the above manner, the fundamental structure of a MOSFET
is formed.
[0012] As shown in FIG. 7E, after the source and drain regions 17
are formed, metal capable of being silicidated such as Ti and Co is
deposited on the substrate surface by sputtering. After a primary
silicidation reaction is performed and unreacted metal is removed,
secondary silicidation reaction is performed to form silicide
layers 18 on the source/drain region surfaces and gate electrode
surface.
[0013] An interlayer insulating film 21 of silicon oxide or the
like is deposited on the substrate surface by CVD, covering the
gate electrode. Contact holes are formed through the interlayer
insulating film 21, and a Ti layer, and a TiN layer or the like are
formed by sputtering and a W layer is deposited by CVD to bury the
metal layer in the contact holes. An unnecessary metal layer is
removed to form conductive plugs 22.
[0014] During the dilute hydrofluoric acid solution process,
undercuts are formed under the silicon nitride side wall spacers 16
as shown in FIG. 7C. If metal enters the undercuts in a later
process and left unremoved, the remaining metal may cause a short
circuit. If the silicide layer is formed in the undercuts, the
silicide layer may increase its volume and impart a stress to the
side wall spacers 16.
[0015] Publication JP-A-HEI-9-162396 teaches a method of forming
source/drain regions and discloses a laminated side wall spacer
structure having nitride film side wall spacers covering the side
walls of a gate electrode and a gate insulating film and oxide film
side wall spacers formed on the nitride side wall spacers, as the
side wall spacers of the gate electrode. Since the oxide film side
wall spacers are formed on the whole surfaces of the nitride film
side wall spacers, it can be considered that undercuts described
above are not formed. However, since the nitride film side wall
spacers contact the substrate surfaces, it is inevitable that the
nitride film side wall spacers impart stresses to the substrate.
While the gate electrode pattern is dry-etched, if the gate
insulating film is also removed, the substrate surface is exposed
to etching and may be damaged.
[0016] A flash memory device is a non-volatile semiconductor memory
device which stores information in the form of electric charges in
the floating gate electrode. Since the flash memory device has a
simple device structure, the flash memory device is suitable for
structuring a large scale integrated circuit device.
[0017] Information write/erase of a flash memory device is
performed by hot carrier injection into the floating gate electrode
and carrier extraction by the Fowler-Nordheim tunneling effect.
High voltage becomes necessary for such write/erase operations of a
flash memory device so that a booster circuit for boosting a power
source voltage is formed in a peripheral circuit. Transistors in
the booster circuit are required to operate at high voltages.
[0018] Recent semiconductor integrated circuits provide a composite
function by integrating a flash memory device and a high speed
logic circuit on the same substrate. Transistors constituting the
high speed logic circuit are required to operate at low voltages.
For a high speed operation, it is desired to thin a gate insulating
film even if leak current is generated. A circuit operating at a
low power dissipation is required in some cases. It is desired to
make the gate insulating film thick to some extent in order to
reduce leak current for a low power dissipation. In order to meet
these requirements, it is desired to form, on the same
semiconductor substrate, transistors of a plurality of types having
different gate insulating film thicknesses and operating at a
plurality of power source voltages.
[0019] The retention characteristics of a flash memory cell depend
on the charge retaining or holding characteristics of the floating
gate electrode. In order to improve the retention characteristics,
it is desired to cover the floating gate with an insulating film of
good quality. Usually, the lower surface of the floating gate
electrode made of a silicon film is covered with a tunneling
insulating film, the upper surface thereof is covered with an ONO
film, and a thermally oxidized film covers the side walls thereof.
The surface of this structure is desired to be covered with a good
quality silicon nitride film. The thermally oxidized film is an
insulating film with a barrier function for preventing leakage of
stored charges, and the silicon nitride film is an insulating film
with a barrier function for shielding OH radicals and moisture
entering from the external.
[0020] Publication JP-A-2003-23114 discloses a method of forming,
on the same semiconductor substrate, flash memory cells, low
voltage operation transistors and high voltage operation
transistors. Side wall spacers are formed at the same time both on
the side walls of laminated gate electrodes of flash memory cells
and on the side walls of gate electrodes of other transistors.
[0021] FIGS. 8A to 8D schematically show an example of a
semiconductor device manufacture method of forming at the same
time, flash memory cells, low voltage operation transistors and
high voltage operation transistors.
[0022] As shown in FIG. 8A, the surface of a silicon substrate 11
formed with an isolation region is thermally oxidized to form a
tunneling oxide film 25. An amorphous silicon film 26 is deposited
on the tunneling oxide film 25, the amorphous silicon film being
used later for forming a floating gate. A so-called ONO film 27
constituted of an oxide film 27a, a nitride film 27b and an oxide
film 27c is formed on the amorphous silicon film 26. The amorphous
silicon film becomes a polysilicon film by later heat
treatment.
[0023] By using a resist pattern, the ONO film 27 and silicon film
26 are patterned to form a floating gate of a flash memory and an
ONO film on the floating gate. At this time, the ONO film and
silicon film in the low and high voltage operation transistor areas
are completely removed.
[0024] By covering the flash memory area with a resist mask, the
tunneling oxide film formed on the surface of the transistor area
is removed by dilute hydrofluoric acid solution. The resist pattern
is removed, and the substrate surface is thermally oxidized to form
a thick gate oxide film 13a for high voltage operation
transistors.
[0025] The flash memory area and high voltage operation transistor
area are covered with a resist mask, and the gate oxide film formed
on the surface of the low voltage transistor area is removed. After
the resist pattern is removed, a thin gate oxide film 13b for low
voltage operation transistors is grown by thermal oxidation. In
this manner, the thin oxide film and thick oxide film are formed in
the transistor area. If gate oxide films having three or more kinds
of different thickness are to be formed, similar processes are
repeated to form first a thick gate oxide film and then thinner
gate oxide films.
[0026] Thereafter, a polysilicon film 28 is deposited on the whole
substrate surface, and patterned by using a resist mask to form a
control gate electrode 28c and gate electrodes 28a and 28b in the
transistor area. The surfaces of the silicon films 26 and 28 are
thermally oxidized to form a thermally oxidized films 29. By using
as a mask at least the gate electrodes formed in this manner, ion
implantation for source/drain regions is performed. For example,
n-type regions 31, 32 and 33 are formed in the flash memory cell
area and extension regions 15 are formed in the transistor
area.
[0027] As shown in FIG. 8B, a silicon nitride film is deposited on
the whole substrate surface by low pressure (LP) CVD, and
etched-back to leave side wall spacers 16 only on side walls of the
gate electrodes and laminated gate electrode.
[0028] As shown in FIG. 8C, the flash memory cell area is covered
with a photoresist pattern PR, and ions are implanted into the
transistor area to form source/drain regions 17 having a deep
junction depth. In this case, the high voltage transistor and low
voltage transistor may be separated by resist masks to execute
separate ion implantation processes in both the areas.
[0029] As shown in FIG. 8D, an interlayer insulating film 21 of
silicon oxide or the like is deposited on the substrate formed with
the gate electrodes and laminated gate electrode, and contact holes
are formed through the interlayer insulating film. A conductive
layer is buried in the contact holes, and an unnecessary portion
thereof is removed to form conductive plugs 22.
[0030] In this manner, it becomes possible to form flash memory
cells and transistors of a plurality of types having different gate
insulating film thicknesses and different operation voltages.
[0031] It is desired for the flash memory cell to have the
thermally oxidized film of good quality on the side walls of the
laminated gate electrode, and the silicon nitride film 16 of good
quality formed by LP-CVD on the thermally oxidized film. In order
to form a dense and high quality silicon nitride film, it is
desired to execute LP-CVD at a film forming temperature of, e.g.,
700.degree. C. or higher.
[0032] In the transistor area, the extension regions 15 having a
shallow junction depth are already formed before the insulating
film having a barrier function such as a silicon nitride film is
formed by LP-CVD. As the extension regions are subjected to the
heat treatment at 700.degree. C. or higher, impurities are
thermally diffused so that there is a possibility that the
extension regions cannot retain a desired shape.
[0033] In a logic circuit, in order to lower the resistance of the
source/drain regions, it is desired to form the silicide layers on
the surface of silicon as shown in FIG. 7E. Before the silicide
layer is formed, it is necessary to clean the substrate surface
with dilute HF solution. In this case, as described in the
manufacture processes shown in FIG. 7A to 7E, side-etched recesses
are formed under the side wall spacers, forming overhangs. As the
overhangs are formed, the overhangs may cause a short circuit and
the like.
[0034] As above, as semiconductor elements of a plurality of types
are formed on the same semiconductor substrate and the
characteristics of each semiconductor element are to be optimized,
unexpected disadvantages may be given to other semiconductor
devices.
DISCLOSURE OF THE INVENTION
[0035] An object of the present invention is to provide a
semiconductor device having side wall spacers made of insulating
films having a barrier function and being free of disadvantages to
be caused by forming the side wall spacers.
[0036] Another object of the present invention is to provide a
semiconductor device integrating flash memory cells, low voltage
operation transistors and high voltage operation transistors and
being free of disadvantages to be caused by mixedly forming
different types of transistors.
[0037] Still another object of the present invention is to provide
a semiconductor device manufacture method suitable for
manufacturing such semiconductor devices.
[0038] According to one aspect of the present invention, there is
provided a semiconductor device comprising: a semiconductor
substrate; a first gate oxide film formed on the semiconductor
substrate; a first gate electrode formed on the first gate oxide
film; first source/drain regions formed in the semiconductor
substrate on both sides of the first gate electrode; and first
laminated side wall spacers having two or more layers and formed on
side walls of the first gate electrode, the first laminated side
wall spacers including a nitride film as a layer other than an
outermost layer, the outermost layer being made of an oxide film or
an oxynitride film and having a bottom surface contacting the
semiconductor substrate, the first gate oxide film or a side wall
spacer layer other than the nitride film.
[0039] According to another aspect of the present invention, there
is provided a method for manufacturing a semiconductor device
comprising the steps of: (a) forming a gate insulating film on a
semiconductor substrate; (b) forming a conductive film on the gate
insulating film; (c) etching the conductive film to form a gate
electrode and expose the gate insulating film; (d) depositing a
first insulating film having an etching selectivity relative to the
gate insulating film, on a whole surface of the semiconductor
substrate, and leaving first side wall spacer layers on side walls
of the gate electrode by anisotropic etching; (e) etching the gate
insulating film to expose a surface of the semiconductor substrate;
(f) depositing a second insulating film on the whole surface of the
semiconductor substrate, and leaving second side wall spacers on
side walls of the first side wall spacers by anisotropic etching;
(g) implanting ions via the first and second side wall spacers to
form source/drain regions; (h) exposing the surface of the
semiconductor substrate by using dilute hydrofluoric acid solution;
and (i) forming a silicide layer on the exposed semiconductor
substrate surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0040] FIGS. 1A to 1E are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device according to a first embodiment of the present
invention.
[0041] FIGS. 2A to 2E are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device according to a second embodiment of the
present invention.
[0042] FIGS. 3A to 3E are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device according to a third embodiment of the present
invention.
[0043] FIGS. 4A to 4E are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device according to a fourth embodiment of the
present invention.
[0044] FIGS. 5A to 5D are plan views and equivalent circuit
diagrams schematically showing the structures of flash memory
cells.
[0045] FIGS. 6A to 6U are cross sectional views of a semiconductor
device schematically illustrating manufacture processes for a
semiconductor device mixedly mounting flash memory cells and other
transistors according to a fifth embodiment of the present
invention.
[0046] FIGS. 7A to 7E are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device according to prior art.
[0047] FIGS. 8A to 8D are cross sectional views of a semiconductor
substrate schematically illustrating a manufacture method for a
semiconductor device mixedly mounting flash memory cells and other
transistors according to prior art.
BEST MODE FOR CARRYING OUT THE INVENTION
[0048] Embodiments of the present invention will be described with
reference to the drawings. FIGS. 1A to 1E are cross sectional views
schematically illustrating a manufacture method for a semiconductor
device according to the first embodiment of the present
invention.
[0049] As shown in FIG. 1A, an isolation trench is formed in the
surface layer of, e.g., a p-type semiconductor substrate 11, an
insulating film is buried in the trench, and an unnecessary portion
of the insulating film is removed by chemical mechanical polishing
(CMP) to form an STI type isolation region 12. The surface of each
active region defined by the isolation region 12 is thermally
oxidized at 800.degree. C. to 1100.degree. C. to form a gate
insulating film 13. A polysilicon film is deposited on the surface
of the semiconductor substrate, covering the gate oxide film 13. By
using a photoresist pattern as a mask, the polysilicon film is
etched to pattern a gate electrode 14.
[0050] In this case, mixture gas of HBr and Cl.sub.2 is used as
etching gas to perform reactive ion etching (RIE) having a high
selectivity with considerably different etching rates between
silicon and the silicon oxide film. This etching has a very slow
etching rate of the silicon oxide film relative to Si. Therefore,
while polysilicon is etched, etching can be stopped by only
slightly etching the gate oxide film 13. The resist pattern is
thereafter removed. By using the patterned gate electrode as a
mask, for example, n-type impurity ions are implanted shallowly to
form extension regions 15 of source/drain regions.
[0051] As shown in FIG. 1B, a silicon nitride film is deposited
covering the gate electrode, and thereafter etched back to leave
side wall spacers 16 of the silicon nitride film only on the side
walls of the gate electrode 14. This etching is performed by
reactive ion etching (RIE) using mainly CHF.sub.3 as etching gas to
leave the gate oxide film 13. If damages to the substrate poses no
problem, the gate oxide film 13 may be etched and removed.
[0052] As shown in FIG. 1C, in order to remove the left gate oxide
film 13 or a native or natural noxide film formed on the substrate
surface if the gate oxide film is already removed, silicon oxide is
isotropically etched. Irotropic etching is an etching method with
smaller damages, and can be performed by using dilute hydrofluoric
acid solution or downstream dry etching. Since isotropic etching
progresses also along a lateral direction, the gate insulating film
13 under the side wall spacers 16 is retracted. In this manner,
undercuts are formed under the side wall spacers 16.
[0053] As shown in FIG. 1D, a silicon oxide film 23 is deposited on
the whole surface of the substrate by using tetraethoxysilane
(TEOS). The silicon oxide film 23 is deposited on the whole surface
of the substrate, burying also the undercuts. Anisotropic etching
is performed by RIE using mainly CF.sub.4 as etching gas. The
silicon oxide film on a flat surface is removed to form side wall
spacers 23 of the silicon oxide film which covers the side surfaces
of the side wall spacers 16 of the silicon nitride film and burying
the undercuts.
[0054] Prior to a silicidation process, the silicon oxide films on
the surface of the semiconductor substrate 11 and on the surface of
the gate electrode 14 are removed with dilute hydrofluoric acid
solution to expose clean surfaces. Since the whole side surfaces of
the side wall spacers are made of the TEOS silicon oxide film, an
etching rate is uniform and undercuts will not be formed. It is
therefore possible to prevent an unexpected short circuit and
strain.
[0055] As shown in FIG. 1E, a metal layer capable of being
silicidated such as a Co layer and a Ti layer is formed on the
surface of the semiconductor substrate to a thickness of, e.g.,
about 30 nm by sputtering. A primary silicidation reaction is
performed by rapid thermal annealing (RTA), for example, 30 seconds
at 550.degree. C. to conduct the primary silicidation reaction
between Si and metal. After an unreacted metal layer is removed, a
secondary silicidation reaction is performed by RTA, for example,
30 seconds at 800.degree. C. to form silicide layers 18.
[0056] Since the silicide layers can be formed without undercuts
and the side wall spacers including the silicon nitride films are
formed, the self-aligned contact (SAC) process such as shown in
FIG. 7E can be executed.
[0057] FIGS. 2A to 2E are cross sectional views schematically
illustrating a semiconductor device manufacture method according to
the second embodiment of the present invention.
[0058] FIGS. 2A and 2B show the same structures as those shown in
FIGS. 1A and 1B, and these structures can be manufactured by the
same processes.
[0059] As shown in FIG. 2C, side wall spacers 23 of TEOS silicon
oxide are formed covering the side wall spacers 16 of silicon
nitride. The TEOS silicon oxide film has an etching rate faster
than that of the thermally oxidized film. While the side wall
spacers 23 are formed, control etching is performed to leave the
gate oxide film 13.
[0060] As shown in FIG. 2D, for a silicidation reaction, the
surfaces of the substrate 11 and gate electrode 14 are exposed by
using dilute hydrofluoric acid solution. In this etching, the TEOS
silicon oxide film 23 has an etching rate faster than that of the
thermally oxidized gate oxide film 13. Therefore, when the gate
oxide film 13 and TEOS silicon oxide film 23 are etched at the same
time, etching the gate oxide film 13 is delayed so that undercuts
will not be formed even if projections are formed.
[0061] As shown in FIG. 2E, silicide layers 18 are formed on the
exposed silicon surfaces similar to the first embodiment.
[0062] According to this embodiment, the gate oxide film is exposed
in the area lower than the side wall spacers. However, since the
outermost layers of the side wall spacers is made of the silicon
oxide film having an etching rate faster than that of the gate
oxide film, undercuts will not be formed. The side wall spacers
contain the silicon nitride films so that the SAC process can be
executed. The silicon nitride film does not contact the substrate
surface so that excessive strain is prevented from being
applied.
[0063] FIGS. 3A to 3E are cross sectional views schematically
illustrating a semiconductor device manufacture method according to
the third embodiment of the present invention.
[0064] FIG. 3A shows the same structure as that shown in FIG. 1A,
and this structure can be manufactured by the same process.
[0065] As shown in FIG. 3B, a silicon oxide film made of TEOS and a
silicon nitride film are successively deposited covering the gate
electrode 14, etched back to form laminated side wall spacers made
of silicon oxide films 24 covering the side walls of the gate
electrode 14 and silicon nitride films 16 on the silicon oxide
films 24. Instead of the TEOS silicon oxide film, a silicon oxide
film formed by thermal oxidation may be used. In forming the side
wall spacers, the silicon nitride film is etched by using mainly
CHF.sub.3 gas as etching gas, and the silicon oxide film is etched
mainly by using CF.sub.4 gas as etching gas. If the gate oxide film
2 is to be left, control etching with limited time is
performed.
[0066] As shown in FIG. 3C, the gate oxide film or a native or
natural oxide film on the silicon surface is removed by using
dilute hydrofluoric acid solution to expose the surface of the
active region. Since the silicon oxide film on the substrate
surface, the gate oxide film 13 and the silicon oxide films 24 of
the side wall spacers are etched, undercuts are formed under the
silicon nitride side wall spacers 16.
[0067] As shown in FIG. 3D, a silicon oxide film of TEOS is
deposited and etched back to form side wall spacers 23. The side
wall spacers 23 bury the undercuts under the side wall spacers of
the silicon nitride film to form an outer surface without
undercuts.
[0068] As shown in FIG. 3E, similar to the above-described
embodiments, silicide layers 18 are formed on the exposed silicon
surfaces.
[0069] According to this embodiment, the side wall spacer is made
of three layers including the silicon oxide film, silicon nitride
film and silicon oxide film and the outermost side wall spacers 23
reach the substrate surfaces. The dilute hydrofluoric acid washing
process before the silicide layers are formed can therefore prevent
undercuts from being formed. Since the side wall spacers contain
the silicon nitride films, the SAC process can be executed. The
silicon nitride film does not contact the substrate surface, so
that excessive strain is prevented from being applied.
[0070] FIGS. 4A to 4E are cross sectional views schematically
illustrating a semiconductor device manufacture method according to
the fourth embodiment of the present invention.
[0071] FIG. 4A shows the same structure as that shown in FIG. 1A,
and this structure can be manufactured by the same process.
[0072] As shown in FIG. 4B, similar to the third embodiment, a
lamination of a silicon oxide film 24 and a silicon nitride film 16
is deposited covering the gate electrode 14, and the silicon
nitride film 16 is etched back. By performing RIE with a proper
selectivity using mainly CHF.sub.3 as etching gas, side wall
spacers of the silicon nitride films 16 are formed and the
underlying silicon oxide films 24 are left.
[0073] As shown in FIG. 4C, a silicon oxide film 23 is deposited on
the whole substrate surface, and etched back to remove the silicon
oxide films 23 and 24 on the flat surface. Side wall spacers are
therefore formed on the side walls of the gate electrode 14, each
having a three-layer lamination structure of the silicon oxide film
24, silicon nitride film 16 and silicon oxide film 23. The first
silicon oxide films 24 in a bent shape or L-shape are formed on the
upper surface of the gate oxide film 13 and on the side walls of
the gate electrodes 14, and side wall spacers made of a lamination
of the silicon nitride films 16 and silicon oxide films 23 are
formed on the bent first silicon oxide films. At this stage, ion
implantation is performed to form source/drain regions 17.
[0074] As shown in FIG. 4D, a gate oxide film or a natural or naive
oxide film existing on the silicon substrate surface is removed to
expose a clean substrate surface. Although the side surfaces of the
gate oxide film are exposed, the gate oxide film has an etching
rate slower than that of the silicon oxide film 23 and undercuts
will not be formed.
[0075] As shown in FIG. 4E, a silicidation reaction like that shown
in FIG. 1E is performed to form silicide layers 18 on exposed
silicon surfaces. The suicide layers of low resistance are formed
on the silicon surfaces, without undercuts so that the resistance
of the electrode regions can be lowered.
[0076] In this embodiment, although the gate oxide film and the
silicon oxide on the gate oxide film are exposed on the side planes
of the side wall spacers, the etching rate of the gate oxide film
is slower than that of the upper silicon oxide film and the side
etching is suppressed so that undercuts are prevented from being
formed. Since the side wall spacers contain the silicon nitride
film, i.e., an insulating film having a barrier function, the SAC
process of etching the interlayer insulating film can be executed.
The silicon nitride film does not reach the substrate surface so
that excessive strain can be prevented from being applied.
[0077] In the following, description will be made on the embodiment
of a semiconductor device mixedly mounting a flash memory, a memory
for a logic circuit, flash memory driving high voltage transistors
and the like.
[0078] FIGS. 5A and 5B are a plan view and an equivalent circuit
diagram showing the structure of a NOR type flash memory. As shown
in FIG. 5A, an isolation region ISO is formed in a semiconductor
substrate to define active regions AR. A tunnelling oxide film is
formed on the active region AR, and an amorphous silicon film as a
floating gate and an ONO film are deposited on the whole substrate
surface and patterned in conformity with the shape of the active
region AR. Thereafter, a polysilicon film as a control gate is
deposited and patterned along a direction perpendicular to the
floating gate, and the exposed underlying ONO film and floating
gate are patterned. Ion implantation for source/drain regions is
performed to form a fundamental structure of a flash memory. A
source line SL is formed along a direction crossing the active
region AR, and connected to source regions. A bit line BL is formed
on the interlayer insulating film along a direction along the
active region, and connected to drain regions.
[0079] As shown in FIG. 5B, each flash memory cell MC having the
floating gate FG and control gate CG is connected to a common bit
line BL and a separate source line so that each flash memory can be
read independently.
[0080] FIGS. 5C and 5D is a plane view and an equivalent circuit
diagram showing the structure of a NAND type flash memory. As shown
in FIG. 5C, an isolation region ISO is formed to define active
regions AR along a vertical direction in FIG. 5C similar to FIG.
5A. A floating gate FG is formed along a direction along the active
region AR, and a control gate CG is formed along a direction
crossing the direction of the floating gate, and patterned together
with the underlying floating gate FG.
[0081] As shown in FIG. 5D, a plurality of flash memory cells MC
are connected in series and connected to a read circuit via a
select gate SG. An on-voltage is applied to the select gate SG, a
read voltage for turning on/off a cell in accordance with
accumulated charges is applied to the cell, and an on-voltage is
applied to other flash memory cells MC to forcibly turn on these
cells. In this manner, a storage state of a memory cell can be read
via a plurality of transistors.
[0082] In the following, description will be made on a flash memory
cell with reference to the cross sectional views taken along line
X-X' in FIG. 5A by way of example. It is obvious that the NAND type
flash memory can be manufactured by similar processes.
[0083] As shown in FIG. 6A, a tunnelling oxide film 25 having a
thickness of 8 nm to 10 nm is formed on the surface of an active
region of a semiconductor substrate 11 by thermal oxidation at
800.degree. C. to 1000.degree. C. In the drawings, the left area is
a memory area in which a flash memory is formed, the central area
is a logic circuit area in which low voltage operation transistors
are formed, and the right area is a peripheral circuit area in
which high voltage operation transistors are formed. A plurality of
types of transistors having different gate oxide film thicknesses
may be formed in the logic circuit area. Each area is defined by an
isolation region such as STI. Although the tunneling oxide film is
not necessary to be formed in the transistor area, the tunneling
oxide film is formed at the same time when the substrate surface is
subjected to thermal oxidation.
[0084] As shown in FIG. 6B, a doped amorphous silicon film having a
thickness of 80 nm to 120 nm and a P concentration of about 5E19
(5.times.10.sup.19) cm.sup.-3 is deposited on the tunneling oxide
film 25 by CVD at about 500.degree. C., and an ONO film 27 is
formed on the doped amorphous silicon film. The doped amorphous
silicon film is changed to a polysilicon film at a later heat
treatment.
[0085] As shown in FIG. 6C, the ONO film is made of a lamination of
a silicon oxide film 27a, a silicon nitride film 27b and a silicon
oxide film 27c. First, the silicon oxide film 27a having a
thickness of 5 nm to 10 nm is deposited on the amorphous silicon
film 27 by high temperature CVD at a substrate temperature of
750.degree. C. or higher, e.g., 800.degree. C. The silicon nitride
film 27b having a thickness of 5 nm to 10 nm is formed on the
silicon oxide film 27a by low pressure CVD at a temperature of,
e.g., 700.degree. C. or higher. The surface of the silicon nitride
film 27b is thermally oxidized at 950.degree. C. to form the
thermally oxidized silicon film 27c having a thickness of 3 nm to
10 nm.
[0086] The ONO film 27 formed in this manner has an excellent leak
current preventive function. Although a film forming temperature of
700.degree. C. or higher is adopted, this poses no problem because
diffusion regions are still not formed in the transistor area.
[0087] As shown in FIG. 6D, after the flash memory area is covered
with a resist pattern PR1, the ONO film 27, silicon film 26 and
tunneling oxide film 25 in the low and high voltage operation
transistor areas are removed. These films on the isolation region
are also removed. In order not to damage the substrate surface, the
tunneling oxide film 25 is removed by wet etching using dilute HF
solution.
[0088] As shown in FIG. 6E, a silicon oxide film 13a is formed on
the surface of the substrate 11 by thermal oxidation at 800.degree.
C. to 1100.degree. C., the film 13a having a thickness of 10 nm to
50 nm suitable for a gate oxide film of a high voltage transistor.
A similar silicon oxide film is also formed in the low voltage
operation transistor area. Oxidation will not progress in the flash
memory cell area because it is covered with the ONO film 27.
[0089] As shown in FIG. 6F, a resist mask PR2 is formed covering
the flash memory cell area and high voltage operation transistor
area, and the silicon oxide film 13a in the low voltage operation
transistor area is removed by using dilute hydrofluoric acid
solution.
[0090] As shown in FIG. 6G, a gate oxide film 13b having a
thickness of 1 nm to 10 nm is formed on the surface of the low
voltage operation transistor area by thermal oxidation at
800.degree. C. to 1100.degree. C. In this manner, a thin gate oxide
film is formed in the low voltage operation transistor area and a
thick gate oxide film is formed in the high voltage operation
transistor area. The gate oxide films of transistors may by made of
silicon oxynitride instead of silicon oxide.
[0091] As shown in FIG. 6H, a polysilicon film 28 is deposited on
the substrate surface to a thickness of 80 nm to 250 nm by CVD at a
substrate temperature of, e.g., 620.degree. C. This polysilicon
film 28 is patterned in a later process to form a control gate
electrode of the flash memory cell and a gate electrode in the
transistor area.
[0092] A silicon nitride film 34 having a thickness of 10 nm to 25
nm is formed on the polysilicon film 28 by plasma CVD at a
substrate temperature of, e.g., 400.degree. C. A thermal silicon
nitride film or a silicon oxynitride film by plasma CVD may be
formed. The silicon nitride film is not necessary to be highly
dense and have a high quality, if it functions as an etch stopper
and a mask for thermal oxidation and ion implantation.
[0093] As shown in FIG. 6I, a resist pattern PR3 is formed on the
silicon nitride film 34, having a laminated gate structure pattern
of the flash memory cell and covering the low and high voltage
operation transistor areas. Etched by using this resist pattern PR3
as a mask are the plasma silicon nitride film 34, polysilicon film
28, ONO film 27 and silicon film 26. Patterned in the flash memory
cell area are the floating gate electrode 26 of the silicon film,
ONO film 27, control gate electrode 28c and plasma silicon nitride
film 34. The resist pattern PR3 is thereafter removed.
[0094] As shown in FIG. 6J, a protective oxide film 35 having a
thickness of 1 nm to 5 nm is formed on the side planes of the
silicon film of the flash memory cell by thermal oxidation at
800.degree. C. to 900.degree. C. The thermally oxidized film is an
insulating film having a high barrier function relative to carrier
leak. Thermal oxidation will not progress in the low and high
voltage operation transistor areas because the silicon nitride film
34 covers the polysilicon film 28.
[0095] As shown in FIG. 6K, a resist pattern PR4 is formed covering
one side of the gate electrode of the flash memory cell and the low
and high voltage operation transistor areas. For example, P.sup.+
ions are implanted into the region exposed in the opening of the
resist pattern PR4 under the conditions of an acceleration energy
of 50 keV to 80 keV and a dose of 1.times.10.sup.14 cm.sup.-2 to
5.times.10.sup.14 cm.sup.-2, to thereby form a n-type drain region
31. Further, As.sup.+ ions are implanted to form a diffusion region
32 under the conditions of an acceleration energy of 30 keV to 50
keV and a dose of 1.times.10.sup.15 cm.sup.-2 to 6.times.10.sup.15
cm.sup.-2. The resist pattern PR4 is thereafter removed.
[0096] As shown in FIG. 6L, a resist pattern PR5 is formed covering
the low and high voltage operation transistor areas. As.sup.+ ions
are implanted into the flash memory area under the conditions of an
acceleration energy of 20 keV to 60 keV and a dose of
5.times.10.sup.14 cm.sup.-2 to 3.times.10.sup.15 cm.sup.-2 to raise
the concentration of the diffusion region 32 and form a source
diffusion region 33 on the other side. The resist pattern PR5 is
thereafter removed.
[0097] As shown in FIG. 6M, a TEOS silicon oxide film 36 is
deposited at a substrate temperature of 600.degree. C., and then a
silicon nitride film 37 is deposited by low pressure (LP) CVD at
0.8 torr and a substrate temperature of 800.degree.. The silicon
nitride film formed by LP-CVD is a highly dense and high quality
insulating film having a high barrier function relative to moisture
and SiH bases. The LP-CVD silicon nitride film and TEOS silicon
oxide film are removed by anisotropic etching using mainly
CHF.sub.3 as etching gas and anisotropic etching using mainly
CF.sub.4 as etching gas, respectively, to form side wall spacers
made of a lamination of the silicon oxide film 36 and silicon
nitride film 37 on the side walls of the laminated gate electrode.
The TEOS silicon oxide film 36 may be omitted.
[0098] As shown in FIG. 6N, anisotropic etching is further
performed by using mainly CF.sub.4 as etching gas to etch the
silicon nitride film 34. The upper portion of the side wall spacers
37 of silicon nitride is also etched. The silicon nitride film 34
in the transistor area is also etched and the silicon film 28 is
exposed.
[0099] If the silicon oxide film 36 is not formed, etching the
silicon nitride films 37 and 34 may be performed successively.
[0100] As shown in FIG. 6O, a resist pattern PR6 is formed having a
gate electrode pattern in the transistor area and covering the
flash memory area. By using the resist pattern PR6 as a mask, the
polysilicon film 28 is etched to form gate electrodes 28a and 28b.
Since the silicon nitride film 34 was removed, the layer to be
etched is only a silicon layer so that high precision etching
becomes easy. The resist pattern PR6 is thereafter removed.
[0101] As shown in FIG. 6P, a resist pattern PR7 is formed covering
the flash memory area and high voltage operation transistor area,
and n-type impurity ions are implanted into the low voltage
operation transistor area to form extension regions 41 of
source/drain regions. The resist pattern PR7 is thereafter
removed.
[0102] As shown in FIG. 6Q, a resist pattern PR8 is formed covering
the flash memory cell area and low voltage operation transistor
area. Lightly doped drain (LDD) regions 42 are formed by implanting
n-type impurity ions into the high voltage operation transistor
area. The resist pattern PR8 is thereafter removed. If the
conditions are satisfied, extension regions and LDD regions may be
formed by the same ion implantation process without separating the
low and high voltage operation transistor areas.
[0103] As shown in FIG. 6R, a TEOS silicon oxide film 44 is
deposited on the whole substrate surface to a thickness of 80 nm to
150 nm at a substrate temperature of 600.degree. C., and etched
back to remove the silicon oxide film on the flat surface. Side
wall spacers 44c of silicon oxide are formed on the side walls of
the laminated gate electrode in the flash memory cell area, whereas
side wall spacers 44b and 44a of silicon oxide are formed on the
side walls of the gate electrodes 28b and 28a in the low and high
voltage operation transistor areas.
[0104] As shown in FIG. 6S, n-type impurity ions are implanted into
all active regions to form source/drain regions 46.
[0105] If a CMOS circuit is to be formed, p-channel regions and
n-channel regions are separated by resist patterns and n-type and
p-type impurity ions are implanted.
[0106] As shown in FIG. 6T, the substrate surface and gate
electrode surfaces are washed with dilute hydrofluoric acid
solution to remove a natural oxide film and the like, and
thereafter a metal layer capable of silicidation such as Ti and Co
is deposited to a thickness of about 30 nm by sputtering. If
necessary, a TiN layer is further deposited and annealing is
performed, for example, for 30 seconds at 500.degree. C. to form
primary silicide layers. After an unreacted metal layer and the
like are removed, secondary annealing is performed, for example,
for 30 seconds at 800.degree. C. to form silicide layers 18 having
a low resistance.
[0107] The silicon nitride layer does not expose on the surfaces of
the side wall spacers, and the gate oxide film and TEOS silicon
oxide film expose in contact with the substrate. Therefore,
undercuts will not be formed and there is no problem of short
circuits, strain and the like.
[0108] As shown in FIG. 6U, an interlayer insulating film 21 is
deposited covering the gate electrode structures, and the surface
thereof is planarized if necessary. Contact holes are formed
through the interlayer insulating film 21, and after a Ti layer, a
TiN layer and the like are formed, a W layer is deposited burying
the contact holes, and an unnecessary portion is removed to form W
plugs 22. In this manner, a semiconductor device mixedly
integrating a plurality of types of semiconductor elements is
formed. If necessary, upper level wirings are formed to form a
multi-layer wiring structure. General techniques of semiconductor
devices may adopt various well-known techniques (for example, refer
to U.S. Pat. Nos. 6,492,734 and 6,500,710, the entire contents of
which are incorporated herein by reference).
[0109] The present invention has been described in connection with
the embodiments. The present invention is not limited thereto. It
will be apparent to those skilled in the art that, for example,
other various modifications, improvements, combinations, and the
like can be made.
INDUSTRIAL APPLICABILITY
[0110] The present invention is applicable to semiconductor
devices. The present invention is applicable to a semiconductor
integrated circuit device mixedly mounting a plurality of types of
semiconductor devices.
* * * * *