U.S. patent application number 10/986499 was filed with the patent office on 2006-07-20 for capacitance detecting circuit and method, and fingerprint sensor using the same.
This patent application is currently assigned to ALPS ELECTRIC CO., LTD.. Invention is credited to Junichi Saito, Yuichi Umeda.
Application Number | 20060158202 10/986499 |
Document ID | / |
Family ID | 34463774 |
Filed Date | 2006-07-20 |
United States Patent
Application |
20060158202 |
Kind Code |
A1 |
Umeda; Yuichi ; et
al. |
July 20, 2006 |
CAPACITANCE DETECTING CIRCUIT AND METHOD, AND FINGERPRINT SENSOR
USING THE SAME
Abstract
In a capacitance detecting circuit, changes in capacitances at
intersections between a plurality of column lines and a row line
are detected as voltages. The capacitance detecting circuit
includes a code generator for generating code having orthogonality
in chronological order. A column-line driver drives the plurality
of column lines based on the code by dividing the column lines into
a first column line group and a second column line group. A
capacitance detector, which is connected to the row line, converts
the total of currents generated in capacitances at the
intersections with the driven column lines into a voltage signal
and outputs the converted voltage signal. A decoding computation
unit determines the voltages corresponding to the capacitances at
the intersections for each of the column line groups by performing
product sum computation between the measured voltages and the code.
In a period for detecting the capacitances, the column-line driver
drives the first column line group and the second column line group
by complementary voltages according to the code or information
indicating the inversion of the code.
Inventors: |
Umeda; Yuichi; (Miyagi-ken,
JP) ; Saito; Junichi; (Miyagi-ken, JP) |
Correspondence
Address: |
BEYER WEAVER & THOMAS LLP
P.O. BOX 70250
OAKLAND
CA
94612-0250
US
|
Assignee: |
ALPS ELECTRIC CO., LTD.
|
Family ID: |
34463774 |
Appl. No.: |
10/986499 |
Filed: |
November 10, 2004 |
Current U.S.
Class: |
324/686 |
Current CPC
Class: |
G06K 9/0002 20130101;
G06F 3/04182 20190501; G06F 3/0446 20190501 |
Class at
Publication: |
324/686 |
International
Class: |
G01R 27/26 20060101
G01R027/26 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 25, 2003 |
JP |
2003-394002 |
Claims
1. A capacitance detecting circuit for detecting changes in
capacitances at intersections between a plurality of column lines
and a row line as voltages, comprising: code generating means for
generating code having orthogonality in chronological order;
column-line driving means for driving the plurality of column lines
based on the code by dividing the column lines into a first column
line group and a second column line group; capacitance detecting
means connected to the row line, for converting a total of currents
generated in capacitances at the intersections with the driven
column lines into a voltage signal and outputting the converted
voltage signal; and decoding computation means for determining the
voltages corresponding to the capacitances at the intersections for
each of the column line groups by performing product sum
computation between the measured voltages and the code, wherein, in
a period for detecting the capacitances, the column-line driving
means drives one of the first column line group and the second
column line group to shift from a first voltage to a second voltage
and drives the other one of the first column line group and the
second column line group to shift from the second voltage to the
first voltage according to the code or information indicating the
inversion of the code.
2. The capacitance detecting circuit according to claim 1, wherein
the capacitance detecting means detects the capacitances at the
intersections of an area capacitance sensor in which a plurality of
row lines are disposed in accordance with the plurality of column
lines in a matrix.
3. The capacitance detecting circuit according to claim 1, wherein
the capacitance detecting means detects the capacitances at the
intersections of a line capacitance sensor in which a row line is
disposed in accordance with the plurality of column lines.
4. The capacitance detecting circuit according to claim 1, wherein
the column-line driving means divides the period for detecting the
capacitances into a first capacitance detection period and a second
capacitance detection period, and in the first capacitance
detection period, the column-line driving means drives the first
column line group to rise from the first voltage to the second
voltage and the second column line group to fall from the second
voltage to the first voltage, and in the second capacitance
detection period, the column-line driving means drives the first
column line group to fall from the second voltage to the first
voltage and the second column line group to rise from the first
voltage to the second voltage.
5. The capacitance detecting circuit according to claim 1, wherein
the plurality of column lines are divided into a plurality of
column line groups, each having a predetermined number of column
lines, and the column-line driving means selectively changes the
plurality of column line groups at predetermined intervals in
chronological order, and drives the selected column line group by
dividing the column lines into the first column line group and the
second column line group based on the code without driving the
column lines of the unselected column line groups.
6. The capacitance detecting circuit according to claim 1, wherein
the code generating means generates PN code having autocorrelation,
and sequentially shifts a phase of the PN code by one bit so as to
output the PN code in chronological order as the code.
7. The capacitance detecting circuit according to claim 1, wherein
the code generating means sequentially generates Walsh orthogonal
code having different orders of bit strings so as to output the
Walsh orthogonal code in chronological order as the code.
8. The capacitance detecting circuit according to claim 5, wherein
the column line group includes the number of column lines smaller
than the number of bits of the code, and the decoding computation
means performs product sum computation by associating the column
lines of the column line group with the bits at predetermined
positions and by associating an imaginary column line with the
remaining bit so as to decode the voltages corresponding to the
capacitances at the intersections.
9. A fingerprint sensor comprising the capacitance detecting
circuit set forth in claim 1.
10. A fingerprint sensor comprising the capacitance detecting
circuit set forth in claim 4.
11. A fingerprint sensor comprising the capacitance detecting
circuit set forth in claim 5.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a capacitance detecting
circuit and method for detecting a very small capacitance, and also
to a fingerprint sensor using the same.
[0003] 2. Description of the Related Art
[0004] As a known fingerprint sensor, which is considered to be
most promising in biometrics techniques, the following type of
pressure-sensitive capacitance sensor has been developed. Row lines
and column lines are formed at predetermined intervals on the
surfaces of two films, and the two films are disposed with a
predetermined gap therebetween such that they face each other with
an insulating film therebetween.
[0005] In this pressure-sensitive capacitance sensor, when a finger
is placed on the sensor, the shape of the films are changed
according to the ridges and valleys of the fingerprint, and
accordingly, the intervals between the row lines and the column
lines are changed. Thus, the shape of the fingerprint is detected
as capacitances at the intersections of the row lines and the
column lines.
[0006] In this type of sensor, to detect a capacitance of less than
several hundred fF (femtofarads), a detecting circuit for
converting the capacitance into an electrical signal by using a
switched capacitor circuit is conventionally used. More
specifically, in this sensor, a sensor capacitor device for
detecting the capacitance of a subject by being driven by a first
sensor drive signal and a reference capacitor device for generating
a reference capacitance for the detecting circuit by being driven
by a second sensor drive signal are connected to a common switched
capacitor circuit. Then, first and second sample-and-hold circuits,
which are alternately operating, sample the output signals of the
sensor capacitor device and the reference capacitor device, and
then determine the difference between the sampled signals, thereby
obtaining a detection signal.
[0007] In this detecting circuit, a signal which is proportional to
the capacitance Cs of the subject and which is inversely
proportional to the feedback capacitance Cf can be stably detected
by the common switched capacitor circuit. Additionally, the leakage
(feedthrough) of electric charge Qd stored in a parasitic
capacitance formed between the gate electrode of a reset switch
(feedback control switch) of the switched capacitor circuit and the
other electrodes to the these electrodes can be offset. Also,
offset components of the reference potential of the switched
capacitor circuit or low-frequency noise contained in the input
signal can be removed to a certain degree by determining the
difference between the sampled signals (for example, see Japanese
Unexamined Patent Application Publication No. 8-145717 (paragraphs
0018-0052, FIGS. 1 through 4)).
[0008] It is demanded that a capacitance detecting circuit used in,
for example, a fingerprint sensor, have high sensitivity since
capacitance changes are very small. At the same time, however, the
detecting circuit must have resistance to noise (including
high-frequency noise) transmitted from a human body or noise from
other circuitry.
[0009] It is also demanded that the capacitance detecting circuit
is not vulnerable to crosstalk noise between adjacent row lines or
column lines.
[0010] To satisfy these demands, the following type of capacitance
detecting circuit can also be considered. At the rise of a column
line, a charging voltage corresponding to the electric charge
charged in the capacitor at the intersection between the row line
and the corresponding column line is detected. Then, at the fall of
the column line, a discharging voltage corresponding to the
electric charge discharged from the capacitor at the intersection
between the row line and the column line is detected. A change in
the capacitance is then detected by using the charging voltage and
the discharging voltage.
[0011] That is, in this capacitor detecting circuit, the difference
voltage is determined by subtracting the discharging voltage from
the charging voltage so as to detect a change in the capacitance.
Accordingly, the voltage offset occurring at the same polarities
caused by the feedthrough of an amplifying circuit or offset
components generated in other circuits can be eliminated, thereby
removing noise having much lower frequencies than the sampling
frequency.
[0012] In regular detecting circuits including the above-described
capacitance detecting circuits, to detect a capacitance change of
each sensor device of a capacitance sensor, only a single column
line is driven to detect a change in the capacitances Cs at the
intersections between the column line and a plurality of row lines.
As described above, a capacitance change per sensor device (one
intersection) is very small, i.e., about several hundred fF.
[0013] Accordingly, in the known capacitor detecting circuits, even
if offset components in the circuitry including the amplifying
circuit are eliminated, the detecting circuit is influenced by
noise originally superposed on the capacitor sensor.
[0014] Thus, in the capacitor detecting circuits, conducted noise
transmitted to the capacitor sensor via a power supply or a human
body is superposed on signals in the row lines and the column
lines, thereby making it difficult to precisely detect a
capacitance change due to this external disturbance noise.
[0015] In inverted fluorescent light, which is mainly used as
current fluorescent light, a fluorescent lamp is switched ON by
generating high frequencies by using semiconductors, causing noise
having a fundamental frequency at a several dozens of KHz
range.
[0016] In the above-described capacitor detecting circuits, the
cycle of the sampling frequency for detecting capacitor changes
when determining the difference between the charging voltage and
the discharging voltage is close to the cycle of the fundamental
frequency of the above-described noise.
[0017] Accordingly, in the capacitor detecting circuits, beat
components caused by a frequency difference, that is, beat
components (beat frequency) equal to the difference between two
overlapped waves having very small frequency differences remain,
and noise components due to the external disturbance cannot be
completely removed.
[0018] Thus, when using a fingerprint sensor, if a device including
a noise source having a frequency close to the sampling frequency
of the capacitor detecting circuit, for example, the
above-described inverted fluorescent light, is placed near the
user, or if the fingerprint sensor is connected to a device having
an inverter circuit used in backlight of a liquid crystal device,
external disturbance noise caused by the above-described beat
components cannot be completely eliminated. Accordingly, the
signal-to-noise (S/N) ratio for detecting capacitance changes is
reduced, thereby making it difficult to precisely read the
fingerprint of the user.
SUMMARY OF THE INVENTION
[0019] Accordingly, in view of the above-described background, it
is an object of the present invention to provide a capacitance
detecting circuit and method in which the influence of external
disturbance noise can be suppressed to improve the S/N ratio so
that very small capacitances Cs and capacitance changes .DELTA.Cs
of the capacitances Cs at intersections (sensor devices) between
row lines and column lines can be detected at a sufficient
sensitivity level, and also to provide a fingerprint sensor using
the above-described capacitance detecting circuit and method.
[0020] In order to achieve the above object, the present invention
provides a capacitance detecting circuit for detecting changes in
capacitances at intersections between a plurality of column lines
and a row line as voltages. The capacitance detecting circuit
includes: a code generator for generating code having orthogonality
in chronological order; a column-line driver for driving the
plurality of column lines based on the code by dividing the column
lines into a first column line group and a second column line
group; a capacitance detector, which is connected to the row line,
for converting the total of currents generated in capacitances at
the intersections with the driven column lines into a voltage
signal and outputting the converted voltage signal; and a decoding
computation unit for determining the voltages corresponding to the
capacitances at the intersections for each of the column line
groups by performing product sum computation between the measured
voltages and the code. In a period for detecting the capacitances,
the column-line driver drives one of the first column line group
and the second column line group to shift from a first voltage to a
second voltage and drives the other one of the first column line
group and the second column line group to shift from the second
voltage to the first voltage according to the code or information
indicating the inversion of the code.
[0021] With this configuration, in the capacitance detecting
circuit of the present invention, signals from a plurality of
column lines interesting with a row line are simultaneously driven
by using code having orthogonality (pseudorandom noise (PN) code or
orthogonal code, which is described below). More specifically, the
column lines of the individual column line groups are
complementarily driven based on the bit data of the code so as to
simultaneously drive a plurality of sensor devices of each row
line. Then, the capacitances Cs and the capacitance changes
.DELTA.Cs to be detected are multiplexed, and the multiplexed
values are changed as the capacitance NCs and N.DELTA.Cs (N is the
number of column lines simultaneously detected, i.e., the number of
intersections multiplexed). The resulting capacitance is converted
into a voltage as a detection signal. Accordingly, large
capacitances and capacitance changes can be substantially measured.
Thus, external disturbance noise, such as beat, can be relatively
reduced so as to improve the S/N ratio, and the influence of
crosstalk between the column lines can be excluded by using code
exhibiting high autocorrelation, such as M-series PN code or Walsh
orthogonal code.
[0022] Also in the capacitance detecting circuit of the present
invention, the decoding computation unit decodes the multiplexed
value into the capacitances Cs and the capacitance changes
.DELTA.Cs of the individual sensor devices corresponding to each
row line by performing product sum computation (predetermined
computation) by using the same code as the code used for
multiplexing. Accordingly, the detection result can be obtained
with a resolution level similar to that for driving one column
line.
[0023] In the aforementioned capacitance detecting circuit, the
capacitance detector may detect the capacitances at the
intersections of an area capacitance sensor in which a plurality of
row lines are disposed in accordance with the plurality of column
lines in a matrix. The capacitance detecting circuit can be used
for a fingerprint sensor, in which case, high-precision
determination results can be obtained. It is thus possible to
provide a sensor exhibiting high operability.
[0024] In the aforementioned capacitance detecting circuit, the
capacitance detector may detect the capacitances at the
intersections of a line capacitance sensor in which a row line is
disposed in accordance with the plurality of column lines. The
capacitance detecting circuit can be used for a sensor for
detecting the presence or absence or the roughness of the
unevenness of the surface, in which case, the surface state of a
subject can be detected with high precision. Additionally, since
the line capacitance sensor is formed of only one row line, a small
and inexpensive sensor can be provided.
[0025] The column-line driver may divide the period for detecting
the capacitances into a first capacitance detection period and a
second capacitance detection period, and in the first capacitance
detection period, the column-line driver may drive the first column
line group to rise from the first voltage to the second voltage and
the second column line group to fall from the second voltage to the
first voltage, and in the second capacitance detection period, the
column-line driver may drive the first column line group to fall
from the second voltage to the first voltage and the second column
line group to rise from the first voltage to the second
voltage.
[0026] With this configuration, in the capacitance detecting
circuit of the present invention, by determining the difference of
a detection signal at the rise of a column driving signal and a
fall of the column driving signal for column lines, offset
components in a differential amplifying circuit can be eliminated,
thereby achieving higher-precision capacitance measurements.
[0027] The plurality of column lines may be divided into a
plurality of column line groups, each having a predetermined number
of column lines. The column-line driver may selectively change the
plurality of column line groups at predetermined intervals in
chronological order, and may drive the selected column line group
by dividing the column lines into the first column line group and
the second column line group based on the code without driving the
column lines of the unselected column line groups.
[0028] With this arrangement, the number of column lines to be
subjected to product sum computation can be set as desired so that
the computation load can be adjusted. Accordingly, the processing
can be performed in accordance with the performance of a system
used.
[0029] In the capacitance detecting circuit of the present
invention, the number of column lines to be driven can be set as
desired so as to set column line groups having the number of column
lines to be activated. Thus, the operation can be performed in
accordance with the power consumption of the apparatus.
[0030] The code generator may generate PN code having
autocorrelation, and sequentially shifts the phase of the PN code
by one bit so as to output the PN code in chronological order as
the code.
[0031] That is, the code generator generates PN code having high
autocorrelation, for example, M-series PN code, and shifts the
M-series PN code so as to multiplex the capacitance changes at the
intersections. Then, decoding is performed by using the same PN
code as that used for multiplexing, and thus, the occurrence of
crosstalk between column lines can be suppressed, thereby making it
possible to detect capacitance changes at the intersections with
high precision.
[0032] Alternatively, the code generator may sequentially generate
Walsh orthogonal code having different orders of bit strings so as
to output the Walsh orthogonal code in chronological order as the
code.
[0033] With this arrangement, the number of driving operations for
the column lines is half the number of detecting operations.
Accordingly, crosstalk between column lines can be suppressed,
thereby detecting the capacitances at the intersections more
precisely.
[0034] The column line group may include the number of column lines
smaller than the number of bits of the code. The decoding
computation unit may perform product sum computation by associating
the column lines of the column line group with the bits at
predetermined positions and by associating an imaginary column line
with the remaining bit so as to decode the voltages corresponding
to the capacitances at the intersections.
[0035] With this arrangement, measured data can be corrected by
using the detection value of the imaginary column line, i.e., the
reference value. Accordingly, in the measurements of the column
line groups, information concerning DC components disappeared by
complementarily driving can be compensated for, and variations in
the measured data in the column line groups can be adjusted. Thus,
the uniformity at the intersections of the overall matrix can be
maintained.
[0036] More specifically, when the column lines are divided into a
plurality of column line groups, at least one column line in each
column line group remains unconnected. Then, the voltage signals
divided in accordance with the intersections by the decoding
computation unit are corrected by using a voltage signal
corresponding to the unconnected intersection as the predetermined
reference value.
[0037] The number of column lines may be set to be smaller than the
number of bits of the code by one. The unoccupied bit is associated
with the unconnected dummy column line and is used only for
decoding processing. The column-line driver does not drive the
dummy column line.
[0038] The present invention also provides a fingerprint sensor
including the above-described capacitance detecting circuit. In
this fingerprint sensor, capacitance changes at the intersections
(sensor devices) can be detected while eliminating external noise,
thereby achieving fingerprint taking with high precision.
[0039] As described above, according to the capacitance detecting
circuit of the present invention, column lines driven by using code
having orthogonality are multiplexed so as to simultaneously drive
a plurality of column lines, thereby detecting the added
capacitance of the capacitance changes at the plurality of
intersections. Accordingly, the influence of external disturbance
noise superposed on the row lines can be relatively reduced,
thereby improving the detection sensitivity. Meanwhile, decoding is
performed by using the same PN code or orthogonal code as the code
used for multiplexing so as to determine the capacitance changes as
the voltages at the intersections. Accordingly, the capacitance
changes at the intersections can be detected with a resolution
level similar to that for driving and detecting the signal output
from a single column line.
BRIEF DESCRIPTION OF THE DRAWINGS
[0040] FIG. 1 is a block diagram illustrating the configuration of
a fingerprint sensor using a capacitance detecting circuit
constructed in accordance with a first or second embodiment of the
present invention;
[0041] FIGS. 2A and 2B are a plan view and a sectional view,
respectively, illustrating a sensor unit, which serves as an area
sensor, shown in FIG. 1;
[0042] FIG. 3 schematically illustrates measurements of fingerprint
data by using the sensor unit shown in FIG. 1;
[0043] FIG. 4 schematically illustrates the configuration of sensor
devices formed at the intersections of row lines of a row line set
and column lines of a column line set in the sensor unit;
[0044] FIG. 5 schematically illustrates the sensor unit and a
charge amplifier circuit shown in FIG. 1;
[0045] FIG. 6A illustrates the configuration of a code generating
circuit of a code generator shown in FIG. 1;
[0046] FIG. 6B illustrates an example of a data string of the code
generated by the code generating circuit shown in FIG. 6A;
[0047] FIGS. 7A and 7B schematically illustrate autocorrelation of
bit strings of pseudorandom noise (PN) code in every cycle as a
result of performing bit shift (phase shift);
[0048] FIG. 8 is a timing chart illustrating the operation of the
selector circuit and the operation for controlling column lines
shown in FIG. 1 in the first embodiment;
[0049] FIGS. 9 through 11 illustrate operations for driving column
lines by using PN code and multiplexing the capacitances of the
sensor devices according to the first embodiment of the present
invention;
[0050] FIG. 12 illustrates an operation for driving column lines by
using orthogonal code and multiplexing the capacitances of the
sensor devices according to the first embodiment of the present
invention;
[0051] FIG. 13 is a timing chart illustrating a detection signal
and the operation of the charge amplifier circuits in the first
embodiment;
[0052] FIG. 14 is a table indicating bit data of PN-code bit
strings stored in a storage shift register as a result of
performing one bit shift;
[0053] FIG. 15 schematically illustrates the relationship between
the measured data di and the voltage data Vsj in the first
embodiment;
[0054] FIG. 16 schematically illustrates equations of the product
sum computation by a decoding computation circuit to perform the
decoding operation in the first embodiment;
[0055] FIG. 17 is a block diagram illustrating the configuration
when the capacitance detecting circuit in the first or second
embodiment is used for a line sensor;
[0056] FIG. 18 is a block diagram illustrating the configuration of
a code generator 1B shown in FIG. 1;
[0057] FIG. 19 schematically illustrates a process for generating
Walsh code, which is typical orthogonal code;
[0058] FIG. 20 is a table indicating Walsh code stored in a code
memory shown in FIG. 18;
[0059] FIG. 21 schematically illustrates the relationship between
the configuration of the code generator 1B and a column line driver
shown in FIG. 1 according to a second embodiment of the present
invention;
[0060] FIG. 22 is a timing chart illustrating the operation for
controlling a selector circuit and the column lines according to
the second embodiment of the present invention;
[0061] FIGS. 23 and 24 illustrate operations for driving column
lines by using orthogonal code and multiplexing the capacitances of
the sensor devices according to the second embodiment of the
present invention;
[0062] FIG. 25 schematically illustrates the relationship between
the measured data di and voltage data Vsj in the second
embodiment;
[0063] FIG. 26 schematically illustrates equations of product sum
computation by the decoding computation circuit in the second
embodiment;
[0064] FIG. 27 is a block diagram illustrating the configuration of
a capacitance detecting circuit according to a third embodiment of
the present invention;
[0065] FIG. 28 schematically illustrates column line groups and a
column line selector in the third embodiment;
[0066] FIG. 29 schematically illustrates the measurement processing
for each column line group in the third embodiment;
[0067] FIG. 30 schematically illustrates column line groups and a
column line selector in a fourth embodiment; and
[0068] FIG. 31 schematically illustrates equations of product sum
computation by the decoding computation circuit in the fourth
embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0069] The present invention is described in detail below with
reference to the accompanying drawings through illustration of
preferred embodiments.
First Embodiment
[0070] A capacitor detecting circuit constructed in accordance with
a first embodiment of the present invention is discussed below with
reference to FIG. 1.
[0071] A code generator 1 generates pseudorandom noise (PN) code
used for generating a column drive signal for driving the column
lines of a column line set 2 of a sensor unit 4. As the PN code,
M-series PN code having high autocorrelation is used. In the sensor
unit 4, the column lines of the column line set 2 and row lines of
a row line set 3 intersect with each other in a matrix, and the
intersections form sensor devices (sensor devices 55 in FIG.
4).
[0072] FIGS. 2A and 2B are a plan view and a sectional view,
respectively, illustrating the sensor unit 4. As shown in FIG. 2A,
the row lines of the row line set 3 and the column lines of a
column line set 2 intersect with each other at a pitch of, for
example, 50 .mu.m. As shown in FIG. 2B, the row line set 3
consisting of a plurality or row lines are disposed on a substrate
50. An insulating film 51 is laminated on the surface of the row
line set 3, and a film 54 is disposed on the surface of the
insulating film 51 with a gap 52 therebetween. The column line set
2 is disposed on the lower surface of the film 54. The sensor
devices 55 are formed as capacitor devices having a predetermined
capacitance at the intersections between the row lines of the row
line set 3 and the column lines of the column line set 2 with the
gap 52 and the insulating film 51 therebetween.
[0073] When a finger 56 is placed on the sensor unit 4, the shapes
of the film 54 and the column lines of the column line set 2 are
changed, as shown in FIG. 3, in accordance with the ridges and
valleys of the finger 56, and the gap 52 is changed accordingly.
Then, the capacitances of the sensor devices 55 formed at the
intersections between the row line set 3 and the column line set 2
are changed.
[0074] FIG. 4 schematically illustrates the matrix of the capacitor
devices between the row lines and the column lines of the sensor
unit 4. The sensor unit 4 is formed of the sensor devices 55, and a
column line driver 5 and a capacitor detecting circuit 100 are
connected to the sensor unit 4. The column line driver 5 outputs
drive pulse trains to the column line set 2 in accordance with the
order of the bit string of the above-described PN code. In other
words, the column line driver 5 outputs predetermined drive pulses
(drive signals) to the column lines of the column line set 2 of the
sensor unit 4 in parallel with each other. The drive pulse
patterns, indicating whether each column line is driven, of the
drive pulse trains are generated based on the PN code, and drives
(activates) the column lines of the column line set 2 according to
the data of the PN-code bit string so as to multiplex capacitance
changes of the intersections (sensor devices) between the driven
column lines and each of the row lines.
[0075] Referring back to FIG. 1, the capacitance detecting circuit
100 includes charge amplifier circuits 6, sample-and-hold circuits
7, a selector circuit 8, an analog-to-digital (A/D) converter 9, a
decoding computation circuit 10, and a timing control circuit
11.
[0076] The charge amplifier circuit 6, which is provided for each
of the row lines of the row line set 3 of the sensor unit 4,
detects a very small electric charge (current corresponding to a
capacitance change) charged into and discharged from the
intersections according to the capacitance based on the charging
current and the discharging current. The charge amplifier circuit 6
amplifies the detected current, converts it to a voltage, and
outputs it as a detection signal (measured voltage).
[0077] The sample-and-hold circuit 7, which is provided for each of
the charge amplifier circuits 6, samples the measured voltages of
the detection signals by the input of a sample-and-hold signal (S/H
signal), and temporarily holds the measured voltages as voltage
information. The selector circuit 8 switches the voltage
information held in the sample-and-hold circuits 7 according to the
order of the row lines, and outputs the rearranged voltage
information to the A/D converter 9 in units of row lines.
[0078] The A/D converter 9 converts the measured voltage, which
serves as analog voltage information, into digital measured data in
synchronization with an A/D clock input from the decoding
computation circuit 10, and outputs the digital data to the
decoding computation circuit 10.
[0079] To achieve fast processing, the A/D converter 9 may be
provided for each of the charge amplifier circuits 6 without
providing the sample-and-hold circuits 7 so that the analog
measured voltages can be converted into digital measured data.
[0080] The decoding computation circuit 10 performs computation on
the digital measured data for removing offset components caused by
the feedthrough by determining the difference between the measured
data when the sensor device at the intersection is charged and the
measured data when the sensor device is discharged. The decoding
computation circuit 10 also decodes the multiplexed signal by
performing product sum computation by using the same PN code as the
PN code used for coding so as to demultiplex the multiplexed signal
into voltage data components indicating the changed capacitances of
the sensor devices.
[0081] In response to the input of a start signal indicating the
start of the detection of capacitances from the decoding
computation circuit 10, the timing control circuit 11 outputs
clocks and control signals to the code generator 1, the column line
driver 5, the charge amplifier circuits 6, the sample-and-hold
circuits 7, and the selector circuit 8, thereby controlling the
operation timing of the overall capacitance detecting circuit
100.
[0082] Each measurement period using the PN code has a first
capacitance detection period and a second capacitance detection
period in chronological order. In response to the input of the PN
code from the code generator 1, in the first capacitance detection
period, the column line driver 5 outputs a column-line drive signal
corresponding to the bit data of the PN code to the column lines
corresponding to the bit positions of the bit string of the PN
code. Then, in the second capacitance detection period, the column
line driver 5 outputs a column-line drive signal corresponding to
the inverted data of the bits of the PN code to the column lines
corresponding to the bit position of the bit string of the PN
code.
[0083] For example, in the first capacitance detection period, when
the bit data of the PN code is 1, the column line driver 5 drives
the column line to shift (rise) from 0 (first voltage) to 1 (second
voltage). When the bit data of the PN code is 0, the column line
driver 5 drives the column line to shift (fall) from 1 (second
voltage) to 0 (first voltage).
[0084] Conversely, in the second capacitance detection period, to
invert the data of the PN code, when the bit data of the PN code is
1, the column line driver 5 drives the column line to shift (fall)
from 1 to 0, and when the bit data of the PN code is 0, the column
line driver 5 drives the column line to shift (rise) from 0 to
1.
[0085] The configuration of the charge amplifier circuit 6 is
discussed below with reference to FIG. 5. The charge amplifier
circuit 6 includes, as shown in FIG. 5, an operational amplifier
121, a feedback capacitor Cf connected between the inverting input
terminal and the output terminal of the operational amplifier 121,
and an analog switch 124 for discharging electric charge stored in
the feedback capacitor Cf. The non-inverting input terminal of the
operational amplifier 121 is connected to a reference
potential.
[0086] In FIG. 5, Cp indicates the parasitic capacitance of the
operational amplifier 121, Cs represents the total of the
capacitances of the sensor devices at the intersections with the
column lines, and Cy designates the total of the capacitances of
the sensor devices corresponding to the column lines other than the
column lines to be detected.
[0087] An example of the operation of the capacitor detecting
circuit 100 configured as described above is described below with
reference to FIG. 1. For the sake of simplicity, in this operation,
it is assumed that 15-bit length PN code is generated by a PN-code
generating circuit 20, which is discussed below.
[0088] A signal indicating that the detection of capacitances is
started, i.e., a fingerprint is to be taken by using the
fingerprint sensor (sensor unit 4), is input into the decoding
computation circuit 10.
[0089] The decoding computation circuit 10 outputs a start signal
instructing the timing control circuit 11 to start detection. Then,
the timing control circuit 11 outputs a clock signal and a reset
signal to the code generator 1.
[0090] The code generator 1 then initializes a built-in four-stage
linear feedback shift register (LFSR) by the reset signal, and
generates M-series PN codes in synchronization with the clock
signal and sequentially outputs them.
[0091] The code generator 1 includes, for example, the PN-code
generating circuit 20 shown in FIG. 6A, and outputs M-series PN
code in synchronization with the clock. More specifically, the
PN-code generating circuit 20 (also referred to as the "LFSR"),
which generates M-series 15-bit PN code, is formed of a four-bit
shift register 21 and an exclusive OR (hereinafter referred to as
"EXOR") 22. The EXOR 22, which is connected to the output of tap 1
(the output of the first bit of the shift register 21) and the
output of tap 4 (the output of the fourth bit of the shift register
21), performs an exclusive-OR operation on the input numerical
values and outputs the computation results to the input of the
shift register 21.
[0092] The PN-code generating circuit 20 shifts the bit data of the
shift register 21 in synchronization with the clock signal so as to
sequentially generate the bit string data of the PN code in
chronological order in synchronization with the clock signal. The
PN-code generating circuit 20 then writes the bit string data in
the order of {1 (LSB), 1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0
(MSB)} (in chronological order from the left to the right in FIG.
6B), as shown in FIG. 6B, into a built-in storage shift register 23
in chronological order in synchronization with the clock signal.
That is, the PN-code generating circuit 20 outputs the PN code in
the order from the LSB to the MSB in chronological order.
[0093] If the bit data is shifted in the cycle of 15 bits, as shown
in FIG. 7A, i.e., if the bit string of the PN code has 15 bits, the
maximum number of auto-correlated bits is +15 in every cycle in
which the bit strings are in phase with each other, and the minimum
number of auto-correlated bits is -1. In FIG. 7A, the vertical axis
indicates autocorrelation (the number of auto-correlated bits (bits
having the same signs), and the horizontal axis represents the bit
number of the phase shift (one cycle of 15-bit shift). In the phase
shift, bits are shifted from the initial bit string of PN code
without rearranging the order of bits.
[0094] The PN-code bit string is compared, as shown in FIG. 7B,
with a bit string generated by cyclically shifting the same PN-code
bit string. When the two PN-code bit strings are in phase with each
other, the number of auto-correlated bits computed by product sum
processing is maximized (+15). In contrast, if the two PN-code bit
strings are out of phase with each other, the number of
auto-correlated bits computed by product sum processing is
decreased one by one and is reduced to -1. The characteristic of
this PN code is similar to the principle of
multiplexing/demultiplexing in code division multiple access (CDMA)
used in cellular telephones in which multiplexed information can be
demultiplexed by using product sum computation when decoding
it.
[0095] Measurements of the capacitances at the above-described
intersections are as follows.
[0096] In response to PN code from the code generator 1, as shown
in FIG. 8, during the measurement period of each of the times t1 to
t15, i.e., during the measurement period of PN code having a
predetermined phase, the column line driver 5 drives the
corresponding column line by using the inverted data of the bits of
the PN code according to a reset signal, which is output from the
timing generating circuit 11 in synchronization of each time
immediately before the first capacitance detection period.
[0097] Then, when the first capacitance detection period is reached
after a predetermined time, the column line driver 5 drives the
column lines by using the inverted data of the bit data set by the
reset signal, that is, the original data of the PN code.
[0098] Then, when the second capacitance detection period is
reached, the column line driver 5 drives the column lines by using
the inverted data of the bit data of the PN code that drove the
column lines in the first capacitance detection period. According
to this operation, the column lines are sequentially driven
complementarily in chronological order.
[0099] More specifically, if the PN code is {1, 1, 1, 1, 0, 1, 0,
1, 1, 0, 0, 1, 0, 0, 0}, as shown in FIG. 8, one cycle of the
PN-code bit string consists of times t1 through t15 with regular
intervals during which the bits are shifted in chronological order.
Then, the PN-code bit string {1, 1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1,
0, 0, 0} generated by the PN-code generating circuit 20 is shifted
in the storage shift register 23.
[0100] The storage shift register 23 has 15 registers, i.e., the
registers 23.sub.1 through 23.sub.15 for storing one-bit data, and
the data is shifted from the left (register 23.sub.1) to the right
(register 23.sub.15). More specifically, at time t1, the first bit
(LSB) 1 of the PN-code bit string is input into the leftmost
register 23.sub.1 of the storage shift register 23. Then, at time
t2, the first bit 1 is shifted to the register 23.sub.2, and the
second bit 1 of the PN-code bit string is input into the register
23.sub.1.
[0101] As a result of performing the above-described operation at
times t1, t2, . . . , and t15, the PN-code bit string {1, 1, 1, 1,
0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0} can be circulated in the registers
23.sub.15, 23.sub.14, 23.sub.13, 23.sub.12, 23.sub.11, 23.sub.10,
23.sub.9, 23.sub.8, 23.sub.7, 23.sub.6, 23.sub.5, 23.sub.4,
23.sub.3, 23.sub.2, and 23.sub.1. The data stored in the registers
23.sub.15, 23.sub.14, 23.sub.13, 23.sub.12, 23.sub.11, 23.sub.10,
23.sub.9, 23.sub.8, 23.sub.7, 23.sub.6, 23.sub.5, 23.sub.4,
23.sub.3, 23.sub.2, and 23.sub.1 are supplied to driver circuits
5.sub.15, 5.sub.14, 5.sub.13, 5.sub.12, 5.sub.11, 5.sub.10,
5.sub.9, 5.sub.8, 5.sub.7, 5.sub.6, 5.sub.5, 5.sub.4, 5.sub.3,
5.sub.2, 5.sub.1, respectively. At the end of the shifting
operation (t1 through t15), the PN-code bit string {1, 1, 1, 1, 0,
1, 0, 1, 1, 0, 0, 1, 0, 0, 0} is supplied to the driver circuits
5.sub.15, 5.sub.14, 5.sub.13, 5.sub.12, 5.sub.11, 5.sub.10,
5.sub.9, 5.sub.8, 5.sub.7, 5.sub.6, 5.sub.5, 5.sub.4, 5.sub.3,
5.sub.2, 5.sub.1, respectively. The operation from t1 to t15
corresponds to one cycle of the fingerprint-taking operation of the
present invention.
[0102] The operation of the storage shift register 23 in the actual
fingerprint-taking operation is discussed below with reference to
FIGS. 9 through 12. In FIGS. 9 through 12, the numbers indicated in
the registers 23.sub.1 through 23.sub.15 of the storage shift
register 23 represent the bit data stored in the registers 23.sub.1
through 23.sub.15. The numbers indicated in inverting portions
24.sub.1 through 24.sub.15 of an inverting circuit 24 represent
data inverted from the data stored in the registers 23.sub.1
through 23.sub.15 and to be supplied to the column line driver
5.
[0103] In response to a signal indicating the start of fingerprint
taking, 15 clock signals are output from the timing control circuit
11, and the PN-code generating circuit 20 generates the PN code
having a first phase. As the initial state, the data bits {1 (MSB),
1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0 (LSB)} are stored in the
registers 23.sub.15 through 23.sub.1, respectively, of the storage
shift register 23.
[0104] Then, at time t1 at the start of the cycle of the
fingerprint-taking operation, the timing control circuit 11 outputs
a clock so as to shift the registers 23.sub.15 through 23.sub.1 by
one bit, resulting in the data string {1, 1, 1, 0, 1, 0, 1, 1, 0,
0, 1, 0, 0, 0, 1}, as shown in FIG. 9.
[0105] The inverting portions 24.sub.1 through 24.sub.15 of the
inverting circuit 24 are connected to the driver circuits 5.sub.1
through 5.sub.15 of the column line driver 5 so as to output the
inverted data to the corresponding driver circuits 5.sub.1 through
5.sub.15.
[0106] When a reset signal is input at time t1, an inverting
control circuit 25 outputs a control signal for causing the
inverting circuit 24 to invert the data output from the storage
shift register 23 and output them.
[0107] Accordingly, the inverting circuit 24 inverts, as shown in
FIG. 9, the data input from the registers 23.sub.1 through
23.sub.15 of the storage shift register 23 by using the inverting
portions 24.sub.1 through 24.sub.15, that is, the inverting circuit
24 inverts the bit string {1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0,
0, 1} into {0, 0, 0, 1, 0, 1, 0, 0, 1, 1, 0, 1, 1, 1, 0} and
outputs the inverted data to the driver circuit 5.
[0108] Then, the driver circuit 5 drives the corresponding column
lines based on the bit string {0, 0, 0, 1, 0, 1, 0, 0, 1, 1, 0, 1,
1, 1, 0} input from the inverting portions 24.sub.15 through
24.sub.1.
[0109] Then, in the column lines C1 through C15, column lines C2,
C3, C4, C6, C7, C10, and C12 are shifted as a second column line
group to the second voltage (predetermined voltage at H level) in
accordance with the bit data 1, while column lines C1, C5, C8, C9,
C11, C13, C14, and C15 are shifted as a first column line group to
the first voltage (predetermined voltage at L level) in accordance
with the bit data 0.
[0110] Referring back to FIG. 8, after a predetermined lapse of
time after the input of the reset signal at time t1, that is, when
the first capacitance detection period is reached, the inverting
control circuit 25 outputs a control signal for causing the
inverting circuit 24 to output the data from the storage shift
register 23 without inverting it.
[0111] Accordingly, in the first capacitance detection period, in
response to the control signal, the inverting circuit 24 changes,
as shown in FIG. 10, from the bit string {0, 0, 0, 1, 0, 1, 0, 0,
1, 1, 0, 1, 1, 1, 0} output from the inverting portions 24.sub.1
through 24.sub.15 into the bit string {1, 1, 1, 0, 1, 0, 1, 1, 0,
0, 1, 0, 0, 0, 1}.
[0112] In this case, the column line driver 5 drives the column
line C1 to rise from the first voltage to the second voltage since
the 15-bit data is changed from 0 to 1; the column line driver 5
drives the column line C2 to fall from the second voltage to the
first voltage since the 14-bit data is changed from 1 to 0; the
column line driver 5 drives the column line C3 to fall from the
second voltage to the first voltage since the 13-bit data is
changed from 1 to 0; and the column line driver 5 drives the other
column lines C4 through C15 in accordance with changes in the data
at the corresponding bit positions.
[0113] That is, the column line driver 5 drives the column lines
C15, C14, C13, C12, C11, C10, C9, C8, C7, C6, C5, C4, C3, C2, and
C1 by the driver circuits 5.sub.15, 5.sub.14, 5.sub.13, 5.sub.12,
5.sub.11, 5.sub.10, 5.sub.9, 5.sub.8, 5.sub.7, 5.sub.6, 5.sub.5,
5.sub.4, 5.sub.3, 5.sub.2, 5.sub.1, respectively, according to
drive pulses having predetermined regular pulse widths based on the
clock signal output from the timing control circuit 11 (see (d)
through (i) of FIG. 8 and (b) of FIG. 13).
[0114] Accordingly, in the first capacitance detection period,
according to the predetermined drive pulses corresponding to the
column lines, the column lines C1, C5, C8, C9, C11, C13, C14, and
C15 are driven as the first column line group by the second
voltage, while the column lines C2, C3, C4, C6, C7, C10, and C12
are driven as the second column line group by the first
voltage.
[0115] Then, the total capacitance in the capacitor sensors at the
intersections between the driven column lines and each of the row
lines R1 through R15, i.e., the capacitance multiplied by the
PN-code bit string, is connected to each of the corresponding row
lines R1 through R15, respectively (FIG. 10).
[0116] Then, currents based on the charge transfer in the
capacitances multiplied by the above-described column-line driving
operation flow in the row lines, and the charge amplifier circuits
6 convert the currents into voltages and output them as measured
voltages. Then, the sample-and-hold circuits 7 sample and hold the
voltages in response to an S/H signal from the timing control
circuit 11.
[0117] Then, after sampling the measured voltages corresponding to
the multiplexed capacitances in the first capacitance detection
period, the timing control circuit 11 outputs a reset signal to the
charge amplifier circuits 6.
[0118] When the analog switch 124 shown in FIG. 5 is turned ON in
response to the input of the reset signal, the output terminal and
the inverting input terminal of the operational amplifier 121 are
short-circuited to set the operational amplifier 121 in the driving
state, as in a voltage follower, that is, the output terminal and
the inverting input terminal become substantially at the reference
potential. Accordingly, the row line also becomes at the reference
potential, and the voltage output from the output terminal of the
operational amplifier 121 does not significantly change even if the
driving states of the column lines are changed.
[0119] Referring to FIG. 8, after a predetermined lapse of time,
i.e., when the second capacitance detection period is reached after
the first capacitance detection period, the inverting control
circuit 25 outputs a control signal for causing the inverting
circuit 24 to invert the data output from the storage shift
register 23 and output them under the control of the timing control
circuit 11.
[0120] Accordingly, in the second capacitance detection period, as
shown in FIG. 9, in response to the above-described control signal,
the inverting circuit 24 changes the bit string {1, 1, 1, 0, 1, 0,
1, 1, 0, 0, 1, 0, 0, 0, 1} supplied to the inverting portions
24.sub.15 through 24.sub.1 to the bit string {0, 0, 0, 1, 0, 1, 0,
0, 1, 1, 0, 1, 1, 1, 0}.
[0121] In this case, the column line driver 5 drives the column
line C1 to fall from the second voltage to the first voltage since
the 15-bit data is changed from 1 to 0; the column line driver 5
drives the column line C2 to rise from the first voltage to the
second voltage since the 14-bit data is changed from 0 to 1; the
column line driver 5 drives the column line C3 to rise from the
first voltage to the second voltage since the 13-bit data is
changed from 0 to 1; and the column line driver 5 drives the other
column lines C4 through C15 in accordance with changes in the data
at the corresponding bit positions.
[0122] That is, the column line driver 5 drives the column lines
C15, C14, C13, C12, C11, C10, C9, C8, C7, C6, C5, C4, C3, C2, and
C1 by the driver circuits 5.sub.15, 5.sub.14, 5.sub.13, 5.sub.12,
5.sub.11, 5.sub.10, 5.sub.9, 5.sub.8, 5.sub.7, 5.sub.6, 5.sub.5,
5.sub.4, 5.sub.3, 5.sub.2, 5.sub.1, respectively, according to
drive pulses having predetermined regular pulse widths based on the
clock signal output from the timing control circuit 11 (see (d)
through (i) of FIG. 8 and (b) of FIG. 13).
[0123] Accordingly, in the first capacitance detection period,
according to the predetermined drive pulses corresponding to the
column lines, the column lines C2, C3, C4, C6, C7, C10, and C12 are
driven as the first column line group by the second voltage, while
the column lines C1, C5, C8, C9, C11, C13, C14, and C15 are driven
as the second column line group by the first voltage.
[0124] Then, the total capacitance in the capacitor sensors at the
intersections between the driven column lines and each of the row
lines R1 through R15, i.e., the capacitance multiplied by the
PN-code bit string, is connected to each of the corresponding row
lines R1 through R15, respectively (FIG. 9).
[0125] Then, currents based on the charge transfer in the
capacitances multiplied by the above-described column-line driving
operation flow in the row lines, and the charge amplifier circuits
6 convert the currents into voltages and output them as measured
voltages. Then, the sample-and-hold circuits 7 sample and hold the
voltages in response to an S/H signal from the timing control
circuit 11.
[0126] Then, after sampling the measured voltages corresponding to
the multiplexed capacitances in the second capacitance detection
period, the timing control circuit 11 outputs a reset signal (at
time t2) to the charge amplifier circuits 6.
[0127] The timing control circuit 11 outputs a clock to the code
generator 1 in synchronization with the output of the reset
signal.
[0128] In the code generator 1, the PN-code generating circuit 20
outputs one bit (data 1). The storage shift register 23 shifts the
individual bits stored in the registers 23.sub.1 through 23.sub.14
to the registers 23.sub.2 through 23.sub.15, respectively, and the
above-described one bit data output from the PN-code generating
circuit 20 is input into the register 231, which is substantially
similar to the case where the data in the register 23.sub.15 is
input into the register 23.sub.1.
[0129] Accordingly, the data bits in the registers 23.sub.1 through
23.sub.15 are circulated by one bit, with the result that PN code
having a new phase is stored in the storage shift register 23.
[0130] The timing control circuit 11 outputs a reset signal, as
indicated by (a) of FIG. 8 and (b) of FIG. 13, to the charge
amplifier circuits 6 slightly before the end of the first or second
capacitance detection period to change the column lines to measure
the capacitance in the subsequent measurement period. The timing
control circuit 11 also outputs an S/H signal to the
sample-and-hold circuits 7 slightly before the reset signal, as
indicated by (b) of FIG. 8 and (d) of FIG. 13.
[0131] The timing control circuit 11 sequentially outputs N
switching signals (N is the number of sample-and-hold circuits 7)
to the selector circuit 8 at intervals during which S/H signals are
sequentially input.
[0132] Accordingly, the signals held in the sample-and-hold
circuits 7 by one S/H signal are sequentially supplied, as
indicated by (c) of FIG. 8, to the A/D converter 9 via the selector
circuit 8 before the subsequent S/H signal is input. The A/D
converter 9 then converts the measured voltage of the detection
signal of each row line to digital data in synchronization with an
A/D clock input from the decoding computation circuit 10, and
outputs the digital data to the decoding computation circuit 10 as
measured data d1. The decoding computation circuit 10 then writes
the data string of the measured data into a built-in memory for
each row line.
[0133] Details of the operation of the charge amplifier circuits 6
are given below. In response to a reset signal output from the
timing control circuit 11 at time td1, which is slightly before
time t1 shown in FIG. 13, the analog switch 124 (MOS transistor in
FIG. 5) is turned ON to discharge the feedback capacitance Cf. This
causes the output OUT and the inverting input terminal of the
operational amplifier 121 to be short-circuited, and thus, the
operational amplifier 121 becomes at the reference potential. The
row line connected to the inverting input terminal of the
operational amplifier 121 also becomes at the reference
potential.
[0134] Then, when the reset signal is turned OFF, the output
voltage of the operational amplifier 121 is slightly raised due to
the feedthrough of the gate parasitic capacitance of the analog
switch 124 (see Fd after time td1 in (a) of FIG. 13).
[0135] Then, in the first capacitance detection period of the
measurement period started at time t1, in accordance with the
PN-code bit patterns (the order of bit strings) of the drive pulses
(column-line drive signals: drive pulses indicated by (d) through
(i) of FIG. 8), the column lines of the first and second column
line groups are driven to rise from the first voltage to the second
voltage or to fall from the second voltage to the first voltage.
Then, the drive pulse is applied to the inverting input terminal of
the operational amplifier 121 via the sensor devices (capacitance
Cs) at the intersections between the column lines and the row line,
and due to the current flowing based on the voltage of this drive
pulse, the voltage of the output OUT of the operational amplifier
121 is gradually decreased or increased, as indicated in (a) of
FIG. 13.
[0136] The waveforms shown in FIG. 13 are indicated when the PN
code is 1. When the PN code is 0, the waveform in time td4 through
td6 and the waveform in time td1 through td3 are inverted.
[0137] Then, at time td2, the timing control circuit 11 outputs an
S/H signal to the sample-and-hold circuit 7. In response to the S/H
signal, the sample-and-hold circuit 7 holds the measured voltage Va
output from the output OUT of the operational amplifier 121 of the
charge amplifier circuit 6.
[0138] Then, at time td3, the timing control circuit 11 again
outputs a reset signal to the charge amplifier circuit 6. This
causes the output OUT and the inverting input terminal of the
operational amplifier 121 to be short-circuited, and the feedback
capacitor Cf is discharged, thereby allowing the output OUT of the
operational amplifier 121 to return to the reference potential.
When the reset signal is turned OFF, as stated above, due to the
feedthrough of the gate parasitic capacitance of the analog switch
124, the output voltage of the operational amplifier 121 is
slightly raised (see Fd after time td3 in (a) of FIG. 13).
[0139] Then, at time td4, the first capacitance detection period is
shifted to the second capacitance detection period. Accordingly, in
the first column line group, the PN code data from the inverting
circuit 24 is changed from 1 to 0, and the drive pulse is dropped
from the second voltage to the first voltage. Thus, the sensor
devices (capacitance Cs) at the intersections between the column
lines driven by the drive pulse and the row line are discharged due
to the currents based on the voltages of the drive pulse, thereby
allowing the output OUT of the operational amplifier 21 to
gradually rise.
[0140] Conversely, although it is not shown in FIG. 13, in the
second column line group, the PN code data from the inverting
circuit 24 is changed from 0 to 1, and the drive pulse is raised
from the first voltage to the second voltage. Thus, the sensor
devices (capacitance Cs) at the intersections between the column
lines driven by the drive pulse and the row line are charged due to
the currents based on the voltages of the drive pulse, thereby
allowing the output OUT of the operational amplifier 21 to
gradually drop.
[0141] Then, at time td5, the timing control circuit 11 outputs an
S/H signal to the sample-and-hold circuit 7. In response to the S/H
signal, the sample-and-hold circuit 7 holds the measured voltage Vb
output from the output OUT of the operational amplifier 121.
[0142] Then, at time td6 (td1 of time t2 of the subsequent cycle),
the timing control circuit 11 outputs a reset signal to the charge
amplifier circuit 6. This causes the output OUT and the inverting
input terminal of the operational amplifier 121 to be
short-circuited, and the feedback capacitor Cf is discharged,
allowing the output OUT of the operational amplifier 121 to return
to the reference potential.
[0143] In the above-described measurements, when the output OUT of
the operational amplifier 121 rises or falls from the reference
potential, the offset voltage Vk due to the feedthrough current of
the analog switch 124 is generated in the +direction. As in this
embodiment, when the capacitance Cs to be detected is several
dozens to several hundred fF (femtofarads), the offsets caused by
the feedthrough current cannot be ignored. In the above-described
measurements, the resulting voltage proportional to the capacitance
Cs is: -Va0=-Va+Vk. In this case, the voltage Va contains an error
Vk due to the offset voltage. Va=Va0+Vk
[0144] Accordingly, in this embodiment, the voltage Vb when the
capacitance Cs is discharged is also measured. The voltage
proportional to the capacitance Cs is: Vb0=Vb-Vk. In this case, the
voltage Vb to be measured is: Vb=Vb0+Vk.
[0145] The measured voltages Va and Vb are sequentially held in the
sample-and-hold circuit 7. Then, each of the held voltages Va and
Vb is converted into a digital voltage by the A/D converter 9, and
the converted voltage is stored in the memory in the decoding
computation circuit 10. Then, the decoding computation circuit 10
performs computation according to the following equation:
d=Vb-Va=(Vb0-Vk)-(Va0+Vk)=Vb0-Va0. As a result, measured data
without offset errors, i.e., measured data d corresponding to the
multiplexed capacitance, can be obtained.
[0146] As described above, the decoding computation circuit 10
determines the difference between the output signals of the charge
amplifier circuit 6 at the rise and at the fall of the potential of
the column lines in response to the rise and the fall of the
predetermined drive pulse in the drive pulse train. Accordingly,
the decoding computation circuit 10 can measure the capacitance of
the sensor devices (intersections) without being influenced by the
feedthrough. Because of the provision of the selector circuit 8,
the measurements of the capacitances of the individual column lines
by the charge amplifier circuits 6 can be simultaneously performed
for the individual column lines, thereby increasing the measurement
speed of the overall sensor.
[0147] In the measurement period (measurement cycle) corresponding
to time t2, the timing control circuit 11 outputs a clock to the
code generator 1 in synchronization with the reset signal.
[0148] In response to this clock, the PN-code generating circuit 20
of the code generator 1 outputs one bit (data 1), and the storage
shift register 23 shifts the bit data stored in the registers
23.sub.1 through 23.sub.14 to the registers 23.sub.2 through
23.sub.15, and inputs the one-bit data 1 into the register
23.sub.1.
[0149] In the storage shift register 23, therefore, since the data
of the registers 23.sub.15 through 23.sub.1 are circulated by one
bit, the bit string is shifted from {1, 1, 1, 0, 1, 0, 1, 1, 0, 0,
1, 0, 0, 0, 1} to {1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0, 1,
1}.
[0150] In response to the reset signal at time t2, the inverting
control circuit 25 outputs a control signal for causing the
inverting circuit 24 to invert the data output from the storage
shift register 23 and output them.
[0151] Accordingly, the inverting circuit 24 inverts, as shown in
FIG. 11, the data input from the registers 23.sub.15 through
23.sub.1 of the storage shift register 23 by using the inverting
portions 24.sub.15 through 24.sub.1 so as to invert the bit string
{1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0, 1, 1} to the bit string {0,
0, 1, 0, 1, 0, 0, 1, 1, 0, 1, 1, 1, 0, 0}, and outputs the inverted
bit string to the driver circuits 5.sub.15 through 5.sub.1.
[0152] Then, the driver circuits 5.sub.15 through 5.sub.1 drive the
corresponding column lines based on the bit string {0, 0, 1, 0, 1,
0, 0, 1, 1, 0, 1, 1, 1, 0, 0} input from the inverting portions
24.sub.15 through 24.sub.1.
[0153] Accordingly, in the column lines C1 through C15, the column
lines C3, C4, C5, C7, C8, C11, and C13 are shifted as the second
column line group to the second voltage (predetermined voltage at H
level) in accordance with the bit data 1, while the column lines
C1, C2, C6, C9, C10, C12, C14, and C15 are shifted as the first
column line group to the first voltage (predetermined voltage at L
level) in accordance with the bit data 0.
[0154] Referring back to FIG. 8, after the lapse of a predetermined
period after the input of the reset signal at time t2, that is,
when the first capacitance detection period is reached, the
inverting control circuit 25 outputs a control signal for causing
the inverting circuit 24 to output the data from the storage shift
register 23 without inverting them.
[0155] Accordingly, in the first capacitance detection period, in
response to this control signal, the inverting circuit 24 changes,
as shown in FIG. 11, the bit string {0, 0, 1, 0, 1, 0, 0, 1, 1, 0,
1, 1, 1, 0, 0} stored in the inverting portions 24.sub.15 through
24.sub.1 to the bit string {1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0, 0,
1, 1}.
[0156] In this case, the column line driver 5 drives the column
line C1 to rise from the first voltage to the second voltage since
the 15-bit data is changed from 0 to 1; the column line driver 5
drives the column line C2 to rise from the first voltage to the
second voltage since the 14-bit data is changed from 0 to 1; the
column line driver 5 drives the column line C3 to fall from the
second voltage to the first voltage since the 13-bit data is
changed from 1 to 0; and the column line driver 5 drives the other
column lines C4 through C15 in accordance with changes in the data
at the corresponding bit positions.
[0157] That is, the column line driver 5 drives the column lines
C15, C14, C13, C12, C11, C10, C9, C8, C7, C6, C5, C4, C3, C2, and
C1 by the driver circuits 5.sub.15, 5.sub.14, 5.sub.13, 5.sub.12,
5.sub.11, 5.sub.10, 5.sub.9, 5.sub.8, 5.sub.7, 5.sub.6, 5.sub.5,
5.sub.4, 5.sub.3, 5.sub.2, 5.sub.1, respectively, according to a
drive pulse having a predetermined regular pulse width based on the
clock signal output from the timing control circuit 11 (see (d)
through (i) of FIG. 8 and (b) of FIG. 13).
[0158] Accordingly, in the first capacitance detection period,
according to the predetermined drive pulses corresponding to the
column lines, the column lines C1, C2, C6, C9, C10, C12, C14, and
C15 are driven as the first column line group by the second
voltage, while the column lines C3, C4, C5, C7, C8, C11, and C13
are driven as the second column line group by the first
voltage.
[0159] Then, the total capacitance in the capacitor sensors at the
intersections between the driven column lines and each of the row
lines R1 through R15, i.e., the capacitances multiplied by the
PN-code bit string, are connected to each of the corresponding row
lines R1 through R15, respectively (FIG. 11).
[0160] Then, currents based on the charge transfer in the
capacitances multiplied by the above-described column-line driving
operation flow in the row lines, and the charge amplifier circuits
6 convert the currents into voltages and output them as measured
voltages. Then, the sample-and-hold circuits 7 sample and hold the
voltages in response to an S/H signal from the timing control
circuit 11.
[0161] Then, after sampling the measured voltages corresponding to
the multiplexed capacitances in the first capacitance detection
period, the timing control circuit 11 outputs a reset signal to the
charge amplifier circuits 6.
[0162] Referring back to FIG. 8, after the lapse of a predetermined
period, that is, when the second capacitance detection period is
reached after the first capacitance detection period, the inverting
control circuit 25 outputs a control signal for causing the
inverting circuit 24 to invert the data output from the storage
shift register 23 and output them under the control of the timing
control circuit 11.
[0163] The operation from td1 to td5 at time t1 and time t2 (for
time t2, only in the first capacitance detection period) shown in
FIG. 13 is repeated at each of time t3 to time t15 (the PN-code bit
strings at the individual times stored in the storage shift
register 23 are shown in FIG. 14). That is, in each cycle, the
PN-code bit string is shifted, column lines are driven, and the
measured voltage is obtained, thereby performing fingerprint
taking.
[0164] In each of the first capacitance detection period and the
second capacitance detection period, the capacitor detecting
circuit 100 drives a plurality of column lines of the column line
set 2 as the first column line group and the second column line
group in response to a drive pulse based on the bit data of the PN
code, and performs the above-described measurements every time the
15-bit PN code is shifted by one bit, thereby obtaining 15 measured
voltages Vd, which are out of phase with each other by one bit, in
chronological order for each row line. The measured voltages Vd are
converted into the measured data Vn (n is the number of bits of the
PN code) by the A/D converter 9. Thus, data strings {d1, d2, . . .
, and d15}, which are multiplexed by the PN code, are obtained.
[0165] The measured data, which are out of phase with each other by
one bit for the individual row lines, as shown in FIG. 15, are
stored in the memory in the decoding computation circuit 10.
[0166] In the equations in FIG. 15, Vs indicates the digital
voltage data converted from the capacitance of the sensor device at
the intersection of each of the driven column lines and the row
line, and the measured data d is multiplexed capacitances of the
sensor devices corresponding to the driven column lines based on
the PN code.
[0167] The above-described equations can be modified into the
following general expression: d i = j = 1 N .times. { .times. PNs
.function. ( i - j + 1 ) .times. Vs .function. ( j ) ( i .gtoreq. j
) .times. PNs .function. ( i - j + 1 + N ) .times. Vs .function. (
j ) ( i < j ) ( 1 ) ##EQU1## wherein j (1, 2, 3, . . . , N)
designates the number of column lines C, and i (1, 2, 3, . . . , N)
represents the number of the measured data (corresponding to the
phase-shift order).
[0168] In equation (1), since about half (8) the column lines of
the column line set 2 are simultaneously driven based on the PN
code, the added voltage data Vsj corresponding to the capacitances
Csj of the sensor devices of about half the intersections is
determined as the measured data di.
[0169] In equation (1), when the PN-code bit data PNi is 1, the
polarity sign PNs(i(0072)) is +1, and when PNi is 0, the polarity
sign PNs(i(0072)) is -1.
[0170] Then, the decoding computation circuit 10 determines the
voltage data Vs of each sensor device from the multiplexed measured
data and the PN code used for multiplexing the data according to
the following equation. ds j = i = 1 N .times. { .times. PNs
.function. ( i - j + 1 ) .times. d .function. ( i ) ( i .gtoreq. j
) .times. PNs .function. ( i - j + 1 + N ) .times. d .function. ( i
) ( i < j ) ( 2 ) ##EQU2##
[0171] As stated above, the time-series measured data d determined
by sequentially shifting the PN code by one bit can be separated
into the voltage data ds corresponding to the capacitance of the
sensor devices at the intersections between the driven column line
and the row line, i.e., into voltage data Vs, by the product sum
computation of the PN code and the measured data d according to
equation (2).
[0172] In equation (2), it is assumed that, when the PN-code bit
data PNi is 1, the polarity sign PNs(i(0074)) is +1, and when PNi
is 0, the polarity sign PNs(i(0074)) is -1.
[0173] The decoding computation circuit 10 separates (decodes) the
measured data d into the voltage data ds by using equation (2).
[0174] More specifically, the voltage data ds of the sensor
devices, i.e., the voltage data {ds1, ds2, ds3, ds4, ds5, ds6, ds7,
ds8, ds9, ds10, ds11, ds12, ds13, ds14, ds15} are multiplexed by
the PN code for each row line, resulting in the data string of the
measured data {d1, d2, d3, d4, d5, d6, d7, d8, d9, d10, d11, d12,
d13, d14, d15}.
[0175] Accordingly, for the decoding operation, the data PNi of the
PN-code bit string {1 (LSB), 1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0,
0 (MSB)} is multiplied as a coefficient with the measured data
di.
[0176] When applying a drive signal to column lines based on
predetermined PN code, the order of the bit string of the PN code
corresponds to the order of the column lines. For example, the LSBs
of the data at the individual times correspond to the column line
C1, and the MSBs correspond to the column line C15.
[0177] Thus, the voltage data ds1 corresponding to the
intersections with the column line C1 is determined by using the
PN-code bit string {1 (LSB), 1, 1, 1, 0, 1, 0, 1, 1, 0, 0, 1, 0, 0,
0 (MSB)} in the following manner. The bit data PNi of this bit
string is multiplied as a coefficient with the measured data di,
and the resulting values are added over one cycle.
[0178] More specifically, the column line C1 is driven at time t1
according to the LSB of the PN-code bit string, and is driven at
time t2 according to the second bit of the PN-code bit string, and
finally, it is driven at time t15 according to the MSB of the bit
string (see the table shown in FIG. 14). Accordingly, also in the
product sum computation, the corresponding data of the PN code data
are multiplied with the measured data at the corresponding times.
Similarly, for the voltage data ds2 corresponding to the
intersections with the column line C2, the PN-code bit string is
shifted by one bit, resulting in {0 (LSB (time t1)), 1, 1, 1, 1, 0,
1, 0, 1, 1, 0, 0, 1, 0, 0 (MSB (time t15))} (corresponding to the
second column in FIG. 14), and the data PNi of each bit of this bit
string is multiplied as a coefficient with the measured data di,
and the resulting values are added over one cycle.
[0179] The above-described processing corresponds to the product
sum computation for PN code, and the voltage data dsj corresponding
to each intersection can be determined by the product sum
computation of the PN-code bit strings shifted by a predetermined
number of bits. In this case, in the product sum computation during
decoding, the initial PN code is used for the column line C1, and
thereafter, the PN codes shifted one by one are used for the
subsequent numbers of column lines.
[0180] That is, in the product sum computation during decoding, for
the data measured at each time, the measured data at the
intersections with the column line number to be determined is
multiplied with the bit data of the same bit number (order) as the
column line number of the bit string of the PN code used at the
above-described time, and the resulting data are added. In other
words, the same data as those of the bit data of the PN code used
for driving the corresponding column lines at each time are
used.
[0181] In this embodiment, when the PN-code bit string
corresponding to the 15 column lines is {1, 1, 1, 1, 0, 1, 0, 1, 1,
0, 0, 1, 0, 0, 0}, the decoding computation circuit 10 performs the
product sum computation shown in FIG. 16 based on equation (2) so
as to separate the voltage data dsj corresponding to the
capacitances of the sensor devices from the data string of the
measured data di.
[0182] As described above, in the first embodiment, a plurality of
column lines are simultaneously driven based on the PN code, and in
the subsequent cycle, the phase of the PN code is shifted. This
operation is repeated. Meanwhile, the time-series data obtained by
the detecting side is subjected to product sum computation with the
PN code. Accordingly, the influences of the capacitances at the
intersections with the other column lines can be substantially
averaged, and also, only the information concerning electric charge
charged and discharged in and from the sensor device (capacitor
sensor) at the intersection with the target column lines can be
extracted.
[0183] In the first embodiment, M-series PN code is used. Although
there are other types of PN codes, M-series PN code has high
autocorrelation. Thus, the influence of M-series PN code on the
adjacent column lines when decoding the detected data becomes
uniform, thereby most effectively reducing crosstalk between the
column lines.
[0184] FIG. 17 is a block diagram illustrating the configuration of
the capacitance detecting circuit of this embodiment used for a
line sensor.
[0185] In this line sensor, row lines are combined into one row
line.
[0186] The individual elements of the capacitance detecting circuit
are similar to those of the above-described area sensor, except
that the selector circuit 8 for selecting a row line to be detected
is not provided, and an explanation thereof is thus omitted by
designating the elements with like reference numerals.
[0187] The circuit of this line sensor is smaller that that of the
area sensor, and thus, the power consumption and the cost can be
reduced.
[0188] To use this line sensor as a fingerprint sensor, a finger is
swept across the row line substantially at right angles. Then, the
timing control circuit 11 outputs the corresponding signals for
performing measurements in predetermined cycles, and the decoding
computation circuit 10 splices the measured data of the individual
row lines which are input in every cycle so as to detect
two-dimensional fingerprint data.
Second Embodiment
[0189] A capacitance detecting circuit constructed in accordance
with a second embodiment of the present invention is described
below with reference to FIG. 1. Elements similar to those of the
first embodiment are designated with like reference numerals, and
an explanation thereof is thus omitted.
[0190] The capacitance detecting circuit of the second embodiment
differs from that of the first embodiment in that the code
generator 1 for generating PN code is substituted with a code
generator 1B for generating orthogonal code.
[0191] The code generator 1B generates orthogonal code used for
generating a control signal for selecting the row lines of the row
line set 3 of the sensor unit 4. As the orthogonal code, orthogonal
code having high orthogonality, for example, Walsh code, is
used.
[0192] That is, as in the code generator 1, the code generator 1B
divides the column line set 2 into two column line groups, i.e.,
the first column line group and the second column line group, based
on the orthogonal code.
[0193] More specifically, in each of the first capacitance
detection period and the second capacitance detection period, the
column line driver 5 sequentially drives the first column line
group and the second column line group complementarily based on the
orthogonal code input from the code generator 1B in chronological
order.
[0194] The column line driver 5 assigns the column lines of the
column line set 2 to the first column line group when the bit data
of the orthogonal-code bit string is 1, and allocates the column
lines to the second column line group when the orthogonal-code bit
data is 0. That is, the currents flowing in the capacitors in these
column lines and the row line are synthesized (multiplexed).
[0195] The operations of the timing control circuit 11, the column
line driver 5, the charge amplifier circuit 6, the sample-and-hold
circuit 7, and the selector circuit 8 are similar to those of the
first embodiment, and an explanation thereof is thus omitted.
[0196] An example of the operation of the capacitance detecting
circuit 100 constructed in accordance with the second embodiment of
the present invention is described below with reference to FIG. 1.
The operation of the second embodiment is similar to that of the
first embodiment, except that orthogonal code is used for
multiplexing measured data instead of the PN code in the first
embodiment. For the sake of simplicity, only the operation
different from that of the first embodiment is discussed, assuming
that 15-bit-length orthogonal code generated by an orthogonal code
reading circuit 220 disposed in the code generator 1B shown in FIG.
18, which is described below, is used.
[0197] A signal indicating the start of the detection of the
capacitance, that is, a signal indicating the start of fingerprint
taking in the fingerprint sensor (sensor unit 4), is input into the
decoding computation circuit 10.
[0198] In response to this signal, the decoding computation circuit
10 outputs a start signal instructing the timing control circuit 11
to start detection to the timing control circuit 11. In response to
the start signal, the timing control circuit 11 outputs, as shown
in FIG. 22, a clock signal and a reset signal to the code generator
1B. The timing chart of FIG. 22 is different from that of FIG. 8
merely in the voltage level of a drive pulse applied to each column
line since the orthogonal code shown in FIG. 20 is used rather than
the PN code shown in FIG. 6, and other operations of the second
embodiment are similar to those of the first embodiment.
[0199] In response to the reset signal, the code generator 1B
initializes the registers, i.e., an address counter 222 and the
orthogonal code reading circuit 220 of the code generator 1B shown
in FIG. 18, via the orthogonal code reading circuit 220, and
sequentially reads and outputs the orthogonal codes from a code
memory 221 to the registers 223.sub.1 through 223.sub.15 of a
storage register 223 in synchronization with the clock. Then, the
storage register 223 outputs the orthogonal code to the
corresponding column lines. The LSB of the orthogonal-code bit
string is stored in the register 223.sub.1, higher positions of the
bits are sequentially stored in the registers 223.sub.2 through
223.sub.14, and finally, the MSB of the orthogonal code is stored
in the register 223.sub.15.
[0200] For example, at time t1, the bit string {1 (LSB), 0, 1, 0,
1, 0, 1, 0, 1, 0, 1, 0, 1, 0, 1 (MSB)} of the orthogonal code at
address t1 indicated in the table of FIG. 20 is written into the
registers 223.sub.1 through 223.sub.15 of the storage register 223,
as shown in FIG. 23.
[0201] The registers 223.sub.1 through 223.sub.15 are connected to
the column lines C1 through C15, respectively, of the column line
set 2 via the inserting circuit 24.
[0202] As in the first embodiment, the inverting circuit 24 outputs
the data stored in the storage register 223 in the inverting state
or non-inverting state to the column line driver 5 in response to a
control signal from the inverting control circuit 25. The registers
223.sub.1 through 223.sub.15 are connected to the buffers 5.sub.1
through 5.sub.15, respectively, via the inverting portions 24.sub.1
through 24.sub.15, respectively.
[0203] In the code generator 1B, the generated orthogonal codes are
stored in the built-in code memory 221, and every time the clock is
input, an orthogonal data string is output to the column line
driver 5.
[0204] Walsh code, which is the typical orthogonal code, is
generated in the order shown in FIG. 19. As the basic structure, a
2.times.2-basic unit is formed in such a manner that the bits at
the top right, top left, and bottom left are the same, and the bits
at the bottom right are inverted from the bits thereof.
[0205] Then, four of the 2.times.2-basic units are combined to form
a 4.times.4-bit matrix. In this case, as in the 2.times.2-basic
unit, the bits at the top right, top left, and bottom left are the
same, and the bits at the bottom right are inverted. Similarly, an
8.times.8-bit matrix, a 16.times.16-bit matrix, and so on, are
formed. In this manner, the number of bits in the matrix can be
expanded into the number of bits (corresponding to the number of
columns) in the bit string and the number of codes (corresponding
to the number of rows).
[0206] In the second embodiment, the first row and the first column
in which all the logical bit data are 0 are excluded from the code
since the first row and column lines cannot be driven and measured
data cannot be multiplexed. That is, in the example of FIG. 19, a
15.times.15-bit matrix is set to be the orthogonal code.
[0207] As discussed above, Walsh code can be generated even for
long-length code, and the Walsh code generated as described above
is used for multiplexing the capacitances in the following
manner.
[0208] In this embodiment, the column line set 2 is formed of, for
example, 15 column lines C1 through C15, and the 15.times.15-bit
matrix orthogonal code is used for multiplexing the
capacitances.
[0209] In the code memory (code memory 221 shown in FIG. 18) in the
code generator 1B, the orthogonal data represented by the
above-described 15.times.15-bit matrix is stored in the data format
indicated by the table shown in FIG. 20. The individual row lines
correspond to addresses t1 through t15 and the corresponding data
are sequentially stored.
[0210] The Walsh code at address t1 is {1 (LSB) 0, 1, 0, 1, 0, 1,
0, 1, 0, 1, 0, 1, 0, 1 (MSB)}, and the Walsh code at address t15 is
{1 (LSB) 1, 0, 1, 0, 0, 1, 1, 0, 0, 1, 0, 1, 1, 0 (MSB)}.
[0211] In response to a start signal, the timing control circuit 11
outputs a measurement start signal to the code generator 1B.
[0212] In response to the measurement start signal, the orthogonal
code reading circuit 220 resets, as shown in FIG. 22, the address
counter 222 and the storage register 223, and sets the count number
of the address counter 222 to be 0.
[0213] At time t1, in response to the reset signal, the inverting
control circuit 25 outputs a control signal for causing the
inverting circuit 24 to invert the data output from the storage
shift register 223 and output them under the control of the timing
control circuit 11.
[0214] In this case, based on the orthogonal code at address t1,
the first column line group is formed of the column lines C1, C3,
C5, C7, C9, C11, C13, and C15, while the second column line group
is formed of the column lines C2, C4, C6, C8, C10, C12, and
C14.
[0215] Accordingly, the inverting circuit 24 inverts, as shown in
FIG. 23, the bit string {1 (LSB) 0, 1, 0, 1, 0, 1, 0, 1, 0, 1, 0,
1, 0, 1 (MSB)} into the bit string {0 (LSB) 1, 0, 1, 0, 1, 0, 1, 0,
1, 0, 1, 0, 1, 0 (MSB)}, and outputs it to the column line driver
5.
[0216] Then, after the lapse of a predetermined period after the
input of the reset signal at time t1, i.e., when the first
capacitance detection period is reached, the inverting control
circuit 25 outputs a control signal for causing the inverting
circuit 24 to output the data from the storage register 223 without
inverting them to the inverting circuit 24.
[0217] Accordingly, the inverting circuit 24 outputs, as shown in
FIG. 24, the bit string {1 (LSB) 0, 1, 0, 1, 0, 1, 0, 1, 0, 1, 0,
1, 0, 1 (MSB)} to the column line driver 5 without inverting
it.
[0218] Every time a current cycle is shifted to the subsequent
cycle after the first and second capacitance detection periods, to
measure the capacitances at the intersections, the orthogonal code
reading circuit 220 receives the clock from the timing control
circuit 11 and outputs the count signal to the address counter
222.
[0219] Then, the address counter 222 counts the input count signal,
and outputs the corresponding addresses t1, t2, . . . , t15 to the
code memory 221.
[0220] Then, the code memory 221 outputs the Walsh code data
(row-line bit string) corresponding to the input addresses t1
through t15 to the orthogonal code reading circuit 220.
[0221] The orthogonal code reading circuit 220 associates the read
orthogonal code with the order of the above-described bit string
from the LSB to the MSB, and writes it into the storage register
223.
[0222] If, for example, the orthogonal code at address t1 in the
table shown in FIG. 20 is written into the storage register 223,
the bit data of the bit string {1 (LSB) 0, 1, 0, 1, 0, 1, 0, 1, 0,
1, 0, 1, 0, 1 (MSB)} is input into the registers 223.sub.1 through
223.sub.15.
[0223] Then, the column line driver 5 complementarily drives the
column lines of the column line set 2 as the two column line
groups, i.e., the first column line group and the second column
line group according to the bit data of the input orthogonal-code
bit string. The driving operation for the column lines according to
the bit data is similar to that of the first embodiment, and a
detailed explanation thereof is thus omitted.
[0224] In a manner similar to the capacitance detection processing
discussed in the first embodiment, at each of the times t1 to t15,
the processing from td1 to td5 shown in FIG. 13 is repeated (the
order of orthogonal-code bit strings stored in the storage register
23 at the individual times are indicated in the table in FIG. 20).
Then, the orthogonal code is read from the code memory 221, the
column lines are driven, and the measured voltage is obtained; such
an operation is repeated over one cycle of the memory addresses t1
to t15, thereby obtaining a fingerprint.
[0225] Then, in the capacitor detecting circuit 100, in response to
the drive pulse P at each time, the code generator 1B sequentially
reads from the code memory 221 15-bit orthogonal code obtained as a
result of the above-described measurement processing, and stores
them in the registers of the storage register 223.
[0226] Then, the code generator 1B outputs the bit data of the
orthogonal code in the non-inverting state during the first
capacitance detection period, and outputs the bit data in the
inverting state in the second capacitance detection period.
[0227] The column line driver 5 then drives the column lines as the
first column line group and the second column line group according
to the bit data input from the storage register 223 via the
inverting circuit 24.
[0228] Accordingly, in the capacitor detecting circuit 100, the 15
measured voltages Vd at each of the addresses t1 to t15
corresponding to the individual times are obtained for each row
line in chronological order. The measured voltages Vd are converted
into the measured data d by the A/D converter 9, resulting in the
data string {d1, d2, . . . , d15} of the measured data multiplexed
by the orthogonal code.
[0229] As the measured data having 15 measured voltages (measured
by using the orthogonal codes in the table shown in FIG. 20), the
following data strings are stored in the memory in the decoding
computation circuit 10 as the data shown in FIG. 25.
[0230] In the data shown in FIG. 25, Vs indicates the digital
voltage data converted from the capacitance of the sensor device at
the intersection of each of the driven column lines and the
corresponding row line, and the measured data d is multiplexed
capacitances of the sensor devices corresponding to the driven
column lines based on the orthogonal code.
[0231] The above-described equations can be modified into the
following general expression: d i = j = 1 N .times. CDs .function.
( i , j ) .times. Vs .function. ( j ) ( 3 ) ##EQU3## wherein j (1,
2, 3, . . . , N) designates the number of column line C, and i (1,
2, 3, . . . , N) represents the number of the measured data
(corresponding to the order of the address ti). That is, CD(i,j) in
equation (3) indicates the polarity sign of the j-th element of the
i-th address at time ti.
[0232] In the above equation, when the orthogonal-code bit data
CD(i,j) is 1, the polarity sign CDs(i,j) is +1, and when CD(i,j) is
0, the polarity sign CDs(i,j) is -1. Based on the orthogonal code,
about one half (8) the column lines are set to be the first column
line group and about the other half (7) the column lines are set to
be the second column line group. The voltage data Vsj obtained by
multiplying the capacitances Csj of the sensor devices at about
half the intersections are added, resulting in the measured data
di.
[0233] Then, the decoding computation circuit 10 determines the
voltage data Vs of each sensor device from the multiplexed measured
data and the orthogonal code used for multiplexing the data
according to equation (4). ds j = j = 1 N .times. CDs .function. (
i , j ) .times. d .function. ( i ) ( 4 ) ##EQU4##
[0234] As stated above, the time-series measured data d determined
by sequentially reading the orthogonal code from the code memory
221 can be separated into the voltage data ds corresponding to the
capacitances of the sensor devices at the intersections between the
column lines complementarily driven with the row line, i.e., into
voltage data Vs, by the product sum computation of the orthogonal
code and the measured data d according to equation (4).
[0235] In equation (4), it is assumed that, when the
orthogonal-code bit data CD(i,j) is 1, the polarity sign CDs(i,j)
is +1, and when CD(i,j) is 0, the polarity sign CDs(i,j) is -1.
[0236] The decoding computation circuit 10 separates the measured
data di into the voltage data dsj by using equation (4).
[0237] More specifically, the voltage data dsj of the sensor
devices, i.e., the voltage data {ds1, ds2, ds3, ds4, ds5, ds6, ds7,
ds8, ds9, ds10, ds11, ds12, ds13, ds14, ds15}, are multiplexed by
the orthogonal code for each row line, resulting in the data string
of the measured data {d1, d2, d3, d4, d5, d6, d7, d8, d9, d10, d11,
d12, d13, d14, d15}.
[0238] Accordingly, for the decoding operation, each measured data
di is multiplied with the polarity sign CDs(i,j) corresponding to
the data CD(i,j) of each bit of the orthogonal-code bit string {1
(LSB), 0, 1, 0, 1, 0, 1, 0, 1, 0, 1, 0, 1, 0, 1 (MSB)}.
[0239] The order of the bit string corresponds to the order of the
column lines; for example, the LSBs correspond to the column line
C1, and the MSBs correspond to the column line C15.
[0240] Thus, the voltage data ds1 corresponding to the
intersections with the column line C1 is determined by using the
LSBs of the orthogonal-code bit string at addresses t1 to t15
{1(t1), 0(t2), 1(t3), 0(t4), 1(t5), 0(t6), 1(t7), 0(t8), 1(t9),
0(t10), 1(t11), 0(t12), 1(t13), 0(t14), 1(t15)} in the following
manner. The polarity sign CDs(i,j) corresponding to bit data
CD(i,j) of this bit string is multiplied with each measured data
di, and the resulting values are added over one cycle.
[0241] More specifically, the voltage data ds1 at the intersections
with the column line C1 has been obtained in the following manner.
The column line C1 is classified into the first or second column
line group by the bit data of the LSB (first bit) of the orthogonal
code at address t1 at time t1, and is classified into the first or
second column line group by the LSB of the orthogonal code at
address t2 at time t2, and similarly, it is classified into the
first or second column line group by the LSB of the orthogonal code
at address t15 at time t15. Accordingly, also in the product sum
computation, each measured data di is multiplied with the polarity
sign corresponding to the bit data of the orthogonal code used for
multiplexing, and the resulting values are added.
[0242] Similarly, the voltage data ds2 at the intersections with
the column line C2 has been obtained in the following manner. The
column line C2 is classified into the first or second column line
group by the bit data of the second bit of the orthogonal code at
address t1 at time t1, and is classified into the first or second
column line group by the second bit of the orthogonal code at
address t2 at time t2, and similarly, it is classified into the
first or second column line group by the second bit of the
orthogonal code at address t15 at time t15. Accordingly, also in
product sum computation, each measured data di is multiplied with
the polarity sign corresponding to the bit data of the orthogonal
code used for the multiplexing, and the resulting values are
added.
[0243] That is, the voltage data ds2 corresponding to the
intersections with the column line C2 is determined by using the
second bits of the orthogonal-code bit string at addresses t1 to
t15 {0(t1), 1(t2), 1(t3), 0(t4), 0(t5), 1(t6), 1(t7), 0(t8), 0(t9),
1(t10), 1(t11), 0(t12), 0(t13), 1(t14), 1(t15)} in the following
manner. The polarity sign CDs(i,j) corresponding to bit data
CD(i,j) of this bit string is multiplied with each measured data
di, and the resulting values are added over one cycle.
[0244] As discussed above, the voltage corresponding to the
capacitance at each intersection is obtained as follows. Each
measured data di is multiplied with the polarity sign CDs(i,j)
corresponding to the data CD(i,j) of the orthogonal-code bit string
used for dividing the column line set 2 into the first column line
group and the second column line group when the drive pulse P is
applied at each of the times t1 to t15, and the resulting values
are added over one cycle. This processing corresponds to product
sum computation using orthogonal code. The voltage data dsj
corresponding to each intersection is determined by the product sum
computation of the measured data di and the polarity signs
corresponding to the orthogonal-code bit string stored in the code
memory 221.
[0245] That is, in the product sum computation during decoding, for
the data measured at each time, the measured data at the
intersections with the column line number to be determined is
multiplied with the polarity sign corresponding to the bit data of
the same bit number (order) as the column line number of the
orthogonal-code bit string used at the above-described time, and
the resulting data are added. In other words, the polarity signs of
the same data as those of the bit data of the orthogonal code used
for dividing the corresponding row line into the first or second
column line group at each time are used.
[0246] In the orthogonal code stored in the code memory 221, as
shown in FIG. 20, corresponding to the 15 column lines, the
decoding computation circuit 10 performs the computation shown in
FIG. 26 based on equation (4) according to the orders of the
orthogonal-code bit strings at the addresses t1 to t15 so as to
separate the voltage data dsj corresponding to the capacitances in
the sensor devices from the data string of the measured data
di.
[0247] As described above, in the second embodiment, the column
lines of the column line set 2 are classified into the first column
line group and the second column line group based on the bit data
of the orthogonal code, and the synthesized measured voltage is
output, and in the subsequent timing, the orthogonal code at the
address at the corresponding time is read from the code memory 221,
and the above-described measurements are performed. This operation
is repeated. Meanwhile, the time-series data obtained by the
detecting side is subjected to product sum computation with the
orthogonal code. Accordingly, the influences of the capacitances at
the intersections with the other column lines can be substantially
averaged, and also, only the information concerning electric charge
charged and discharged in and from the sensor devices (capacitor
sensors) at the intersection with the target column lines can be
extracted.
Third Embodiment
[0248] A capacitance detecting circuit constructed in accordance
with a third embodiment of the present invention is described below
with reference to FIG. 27. Elements corresponding to those of the
first and second embodiments are designated with like reference
numerals, and an explanation thereof is thus omitted.
[0249] The third embodiment differs from the first and second
embodiments in that the columns lines of the column line set 2 are
divided into a plurality of column line groups, and the column line
groups are sequentially selected one by one to perform multiplexing
measurements, namely, while a selected column line group performs
measurements, the other (unselected) column line groups do not
perform measurements.
[0250] In other words, in the first and second embodiments,
multiplexing by using the PN code or orthogonal code is performed
on the overall column lines, while in the third embodiment, column
lines are complementarily driven in each of the column line groups
so as to multiplex the measured voltages by using PN code or
orthogonal code.
[0251] Accordingly, in the capacitor detecting circuit of the third
embodiment, a column line selector 13 for dividing the column line
set 2 into column line groups, each having a predetermined number
of column lines, and for selecting the column line group to be
measured is inserted, as shown in FIG. 27, between the code
generator 1 (or 1B) and the column line driver 5.
[0252] The column line selector 13 divides a plurality of column
line groups, each having a predetermined number of column lines,
selects one of the column line groups, and outputs the PN code or
orthogonal code from the code generator 1 (or 1B) to the column
line driver 5.
[0253] The column line group selected by the column line selector
13 is input into the corresponding buffer circuit of the column
line driver 5, and the column line driver 5 supplies a drive pulse
generated from the PN code or orthogonal code to the selected
column line group.
[0254] FIG. 28 illustrates the configuration of the column line
selector 13 for selecting the column line group to be driven from
the column line set 2. Although the circuit configuration when the
PN code is generated is shown in FIG. 28, the configuration of the
column line selector 13 when orthogonal code is used is similar to
that shown in FIG. 28.
[0255] The column line driver 5 divides, as shown in FIG. 28, the
column line set 2 into a predetermined number, for example, M,
column line groups 2.sub.1 through 2.sub.M, and sequentially
outputs the data from the storage shift register 23 into the
selected column line group at regular intervals.
[0256] The number of column lines in each column line group is the
same as the number of bits of the bit string of the PN code or
orthogonal code generated by the code generator 1 (or 1B).
[0257] In the third embodiment, if the number of bits of the PN
code or the orthogonal code is 15, the number of column lines in
each of the column line groups 2.sub.1 through 2.sub.M is also
15.
[0258] In the third embodiment, adjacent, consecutive column lines
are combined into a group, and if the number of bits of the PN code
or orthogonal code is 15 (N=15), 15 column lines are combined into
one column line group, resulting in the 17 column line groups
(M=17). Accordingly, 255 column lines can be controlled.
[0259] In the third embodiment, the column line selector 13
maintains, as shown in FIG. 29, the selected column line group
during one cycle of the PN code or orthogonal code according to a
control signal from the timing control circuit 11. That is, the
column line group is switched in every cycle of PN code or
orthogonal code.
[0260] That is, when the measurements of the capacitances at the
intersections between the row lines and the column lines are
finished over one cycle, another column line group is selected, as
shown in FIG. 29. The column line groups may be selected in the
ascending order from the column line groups 2.sub.1 to 2.sub.M, or
the column line groups may be selected randomly.
[0261] The operation for measuring the capacitances in each column
line group is similar to that of the first or second embodiment,
and a detailed explanation thereof is thus omitted.
Fourth Embodiment
[0262] To further develop the third embodiment, in a fourth
embodiment, in the capacitance measurement method for measuring
capacitances for each column line group by dividing the column line
set 2 into a plurality of column line groups, the measurement
precision of the capacitance detecting circuit is improved.
[0263] In the third embodiment, information concerning basic DC
components disappears due to the complementary control operation
for driving the column lines, and due to the capacitance at the
intersections between a row line and column lines other than the
driven column lines, which is caused by crosstalk, offset
components are generated in measured voltages to be
multiplexed.
[0264] The capacitance of each row line and the unselected column
lines varies depending on the column line group, and thus, the
offset levels in the individual row lines are not stabilized. As a
result, in a two-dimensional fingerprint image obtained by the
measured data of the individual row lines, the shade of the image
may become non-uniform depending on the row lines due to the
different offset levels.
[0265] Accordingly, in the capacitance detecting circuit of the
fourth embodiment, to suppress the non-uniform shade of a resulting
image, the number of column lines in each column line group is
differentiated from the number of bits of a bit string of the PN
code or orthogonal code. That is, the number of column lines in a
column line group is set to be smaller than the number of bits of
the PN code or orthogonal code by at least one bit.
[0266] For example, for the 15-bit PN code or orthogonal code, one
bit is set to be unused (not connected), as shown in FIGS. 30, and
14 column lines are connected to the 15-bit PN code or orthogonal
code.
[0267] Accordingly, in the bit string of the PN code or orthogonal
code, one bit is associated with an imaginary column line, and this
imaginary column line is not activated, and can be used as a
reference value of the constant capacitance.
[0268] In the decoding computation shown in FIG. 31, the voltage
data ds1 through ds14 indicate the outputs corresponding to the
actual capacitances at the corresponding intersections, while the
voltage data ds15 is output as a reference value (no signal) since
the imaginary column line is not actually connected.
[0269] Then, offset computation for associating the voltage data
ds15 with the predetermined reference value dref is performed for
each column line group. For example, the following computation is
performed: Ofs=ds15-dref dsaj=dsj-Ofs (1.ltoreq.j.ltoreq.14) where
the reference value dref is set as the reference for all the column
line groups and the row lines, and the offset value Ofs is an
offset amount used for correcting the voltage data for each column
line group for each row line.
[0270] After determining the offset value Ofs for each column line
group, the offset value Ofs is subtracted from the voltage data dsj
(1.ltoreq.j.ltoreq.14) corresponding to the other column lines in
the same column line group, thereby obtaining the corrected voltage
data corresponding to the reference value dref in all the column
line groups. As a result, a uniform shade of a two-dimensional
image can be obtained.
[0271] A program for implementing the functions of the processors
shown in FIG. 1, 17, or 27 may be recorded on a computer-readable
recording medium, and the program is read into a computer system
and is executed, thereby performing measurement processing in the
capacitor detecting circuit. The "computer system" includes an
operating system (OS), hardware, such as peripheral devices, and a
WWW system provided with a homepage providing environment (or
display environment). The "computer-readable recording medium"
includes portable media, such as flexible disks, magneto-optical
disks, read only memory (ROM), and compact disc read only memory
(CD-ROM), and storage devices, such as a hard disk contained in the
computer system. The computer-readable recording medium also
includes storage devices for temporarily storing programs, such as
volatile memory (RAM) contained in the computer system, which
serves as a server or a client when the program is sent via a
communication line, such as a network, for example, the Internet,
or a telephone line.
[0272] The above-described program may be transmitted to another
computer system via a transmission medium or transmission waves in
the transmission medium from the computer system storing the
program in, for example, a storage device. The "transmission
medium" for transmitting the program is a medium having a function
of transmitting information, such as a communication line, such as
a network (communication network), for example, the Internet, or a
telephone line. The program may implement only part of the
above-described functions, or may implement the functions in
combination with another program stored in the computer system,
i.e., the program may be a so-called "difference file (difference
program).
* * * * *