U.S. patent application number 11/330548 was filed with the patent office on 2006-06-08 for semiconductor device manufacturing method and semiconductor manufacturing apparatus.
This patent application is currently assigned to KOKUSAI ELECTRIC CO., LTD.. Invention is credited to Kiyohiko Maeda, Norikazu Mizuno.
Application Number | 20060121746 11/330548 |
Document ID | / |
Family ID | 18262626 |
Filed Date | 2006-06-08 |
United States Patent
Application |
20060121746 |
Kind Code |
A1 |
Mizuno; Norikazu ; et
al. |
June 8, 2006 |
Semiconductor device manufacturing method and semiconductor
manufacturing apparatus
Abstract
A semiconductor device manufacturing method comprises a first
step of forming, by a thermal chemical vapor deposition method, a
silicon nitride film on an object disposed in a reaction container,
with bis tertiary butyl amino silane and NH.sub.3 flowing into the
reaction container, and a second step of removing silicon nitride
formed in the reaction container, with NF.sub.3 gas flowing into
the reaction container.
Inventors: |
Mizuno; Norikazu; (Tokyo,
JP) ; Maeda; Kiyohiko; (Tokyo, JP) |
Correspondence
Address: |
HOGAN & HARTSON L.L.P.
500 S. GRAND AVENUE
SUITE 1900
LOS ANGELES
CA
90071-2611
US
|
Assignee: |
KOKUSAI ELECTRIC CO., LTD.
|
Family ID: |
18262626 |
Appl. No.: |
11/330548 |
Filed: |
January 11, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09670917 |
Sep 29, 2000 |
|
|
|
11330548 |
Jan 11, 2006 |
|
|
|
Current U.S.
Class: |
438/791 ;
257/E21.252; 257/E21.293; 438/724; 438/778; 438/905 |
Current CPC
Class: |
H01L 21/02271 20130101;
H01L 21/0217 20130101; H01L 21/3185 20130101; Y10S 438/905
20130101; C23C 16/4405 20130101; H01L 21/02211 20130101; H01L
21/31116 20130101; C23C 16/345 20130101 |
Class at
Publication: |
438/791 ;
438/724; 438/778; 438/905 |
International
Class: |
H01L 21/31 20060101
H01L021/31; H01L 21/302 20060101 H01L021/302 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 24, 1999 |
JP |
11-333129 |
Claims
1. A semiconductor device manufacturing method, comprising: a first
step of forming, by a thermal chemical vapor deposition method, a
silicon nitride film on an object disposed in a reaction container,
with bis tertiary butyl amino silane and NH.sub.3 flowing into the
reaction container, and a second step of removing silicon nitride
formed in said reaction container, with NF.sub.3 gas flowing into
said reaction container.
2. A semiconductor device manufacturing method as recited in claim
1, further comprising said first step after said second step.
3. A semiconductor device manufacturing method as recited in claim
1, wherein after repeating said first step predetermined times,
said silicon nitride formed in said reaction container is removed,
with NF.sub.3 gas flowing into said reaction container.
4. A semiconductor device manufacturing method as recited in claim
1, wherein before said silicon nitride formed in said reaction
container has a predetermined thickness, said silicon nitride
formed in said reaction container is removed, with NF.sub.3 gas
flowing into said reaction container.
5. A semiconductor device manufacturing method as recited in claim
1, wherein before said silicon nitride formed in said reaction
container has such a thickness as to generate particles on said
object, said silicon nitride formed in said reaction container is
removed, with NF.sub.3 gas flowing into said reaction
container.
6. A semiconductor device manufacturing method as recited in claim
1, wherein said reaction container itself is made of quartz and/or
a member made of quartz is used in said reaction container, and
before a thickness of said silicon nitride formed on said quartz is
increased to such an extent as to generate particles on said
object, NF.sub.3 gas is allowed to flow into said reaction
container to remove said silicon nitride formed on said quartz.
7. A semiconductor device manufacturing method as recited in claim
6, wherein said second step is carried out in a state where a
pressure in said reaction container is set to 10 Torr or
higher.
8. A semiconductor device manufacturing method as recited in claim
1, further comprising a step of purging said reaction container
using NH.sub.3 gas at least one of before and after said first
step.
9. A semiconductor manufacturing apparatus comprising a reaction
container, wherein a silicon nitride film is formed, by a thermal
chemical vapor deposition method, on an object disposed in said
reaction container, with bis tertiary butyl amino silane and
NH.sub.3 flowing into the reaction container, and silicon nitride
formed in said reaction container is removed, with NF.sub.3 gas
flowing into said reaction container.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device
manufacturing method and a semiconductor manufacturing apparatus,
and more particularly, to a semiconductor device manufacturing
method including a silicon nitride film manufacturing step using a
thermal CVD (Chemical Vapor Deposition) method, and to a
semiconductor manufacturing apparatus preferably used for the
method.
[0003] 2. Description of the Related Art
[0004] Conventionally, it is common that a silicon nitride film
used in a semiconductor device is formed using mixed gas of
SiH.sub.2Cl.sub.2 (DCS, hereinafter) and NH.sub.3.
[0005] According to this method, however, it is necessary to form
the silicon nitride film at a temperature as high as 700.degree. C.
to 800.degree. C. and as a result, there is a problem that
impurities are adversely diffused deeply into a shallow diffused
layer and a semiconductor device element can not be formed small in
size. Further, there is a problem that NH.sub.4Cl (ammonium
chloride), which is a by-product of reaction, adheres to a
discharge port, this NH.sub.4Cl generates rust on a metal surface,
and metal contamination is generated on a semiconductor wafer.
SUMMARY OF THE INVENTION
[0006] To solve the problems, the present inventors examined
forming a silicon nitride (Si.sub.3N.sub.4) film using NH.sub.3 and
SiH.sub.2 (NH(C.sub.4H.sub.9) ).sub.2 (bis tertiary butyl amino
silane: BTBAS, hereinafter) as raw gases. As a result, the
inventors have found that the silicon nitride film can be formed at
a low temperature of about 600.degree. C. and NH.sub.4Cl, which is
a cause of metal contamination, is not generated.
[0007] However, the present inventors have found that the
Si.sub.3N.sub.4 film formed using BTBAS has the following
drawbacks.
[0008] That is, BTBAS and NH.sub.3 introduced in a furnace are
decomposed by heat, and the Si.sub.3N.sub.4 film is formed not only
on a wafer but also on an inner wall of a quartz reaction tube and
an inner member made of quartz used in the reaction tube. The
Si.sub.3N.sub.4 film formed using BTBAS has a strong film stress
and a film shrinkage ratio is great. A Si.sub.3N.sub.4 film formed
by using DCS and NH.sub.3 and an Si.sub.3N.sub.4 film formed by
using BTBAS and NH.sub.3 were compared with each other. Comparison
data of a film contraction ratio in percentage is shown in FIG. 4,
and comparison data of film stress is shown in FIG. 5. In FIGS. 4
and 5, "B" shows an Si.sub.3N.sub.4 film formed by using BTBAS and
NH.sub.3, and "D" shows an Si.sub.3N.sub.4 film formed by using DCS
and NH.sub.3. The film stress means a tensile force (film stress),
and the Si.sub.3N.sub.4 film formed on a reaction furnace quartz
comes off by the film stress. The film is shrunk by a high
temperature (about 600.degree. C.) of the reaction furnace. Since
quartz does not shrink or expand by heat and thus, distortion
occurs. Therefore, when the Si.sub.3N.sub.4 film becomes thick, a
microcrack is generated, and particles are generated on the wafer.
A thickness of an Si.sub.3N.sub.4 film that may cause the
microcrack is 4,000 .ANG..
[0009] To solve the problem of the particles, it is necessary to
perform maintenance in such a manner that whenever a film thickness
becomes 4,000 .ANG., a quartz inner tube 12, a quartz boat 14, and
a quartz cap 15 of an vertical-type LPCVD (Low Pressure Chemical
Vapor Deposition) film forming apparatus 1 are disassembled, and
they are subjected to wet cleaning using HF (hydrogen fluoride) to
remove the Si.sub.3N.sub.4 film. When one time film forming
operation forms a film of 1,000 .ANG. thickness, it is necessary to
perform the maintenance every four film forming operations.
Further, there is a problem that it takes 16 hours to complete the
maintenance, and this is too long.
[0010] Thereupon, it is a main object of the present invention to
solve the problem of high frequency of maintenance when an
Si.sub.3N.sub.4 film is produced using BTBAS and NH.sub.3, and to
provided a manufacturing method and a manufacturing apparatus of a
silicon nitride film capable of reducing the maintenance frequency
as small as possible and suppressing or preventing generation of
particles.
[0011] According to a first aspect of the present invention, there
is provided a semiconductor device manufacturing method,
comprising:
[0012] a first step of forming, by a thermal chemical vapor
deposition method, a silicon nitride film on an object disposed in
a reaction container, with bis tertiary butyl amino silane and
NH.sub.3 flowing into the reaction container, and
[0013] a second step of removing silicon nitride formed in the
reaction container, with NF.sub.3 gas flowing into the reaction
container.
[0014] Preferably, the semiconductor device manufacturing method
according to the first aspect of the present invention further
comprises the first step after the second step. That is the
semiconductor device manufacturing method according to the first
aspect of the present invention preferably comprises the first
step, thereafter the second step and thereafter the first step
again.
[0015] Preferably, after repeating the first step predetermined
times, the silicon nitride formed in the reaction container is
removed, with NF.sub.3 gas flowing into the reaction container.
[0016] Preferably, before the silicon nitride formed in the
reaction container has a predetermined thickness, the silicon
nitride formed in the reaction container is removed, with NF.sub.3
gas flowing into the reaction container.
[0017] Preferably, before the silicon nitride formed in the
reaction container has such a thickness as to generate particles on
the object, the silicon nitride formed in the reaction container is
removed, with NF.sub.3 gas flowing into the reaction container.
[0018] Preferably, the reaction container itself is made of quartz
and/or a member made of quartz is used in the reaction container,
and before a thickness of the silicon nitride formed on the quartz
is increased to such an extent as to generate particles on the
object, NF.sub.3 gas is allowed to flow into the reaction container
to remove the silicon nitride formed on the quartz. In this case,
it is preferable to remove the silicon nitride with NF.sub.3 gas
before the thickness of the silicon nitride becomes 4000 .ANG. or
larger.
[0019] Preferably, the second step is carried out in a state where
a pressure in the reaction container is set to 10 Torr or
higher.
[0020] Preferably, the semiconductor device manufacturing method
according to the first aspect of the present invention further
comprises a step of purging the reaction container using NH.sub.3
gas at least one of before and after the first step.
[0021] According to a second aspect of the present invention there
is provided a semiconductor manufacturing apparatus comprising a
reaction container, wherein
[0022] a silicon nitride film is formed, by a thermal chemical
vapor deposition method, on an object disposed in the reaction
container, with bis tertiary butyl amino silane and NH.sub.3
flowing into the reaction container, and
[0023] silicon nitride formed in the reaction container is removed,
with NF.sub.3 gas flowing into the reaction container.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The above and further objects, features and advantages of
the present invention will become more apparent from the following
detailed description taken in conjunction with the accompanying
drawings, wherein:
[0025] FIG. 1 is a schematic sectional view for explaining a
vertical-type LPCVD film forming apparatus used in one embodiment
of the present invention;
[0026] FIG. 2 is a schematic view for explaining one example of a
BTBAS supply apparatus preferably used in the film forming
apparatus used in the one embodiment of the present invention;
[0027] FIG. 3 is a schematic view for explaining another example of
a BTBAS supply apparatus preferably used in the film forming
apparatus used in the one embodiment of the present invention;
[0028] FIG. 4 is a graph showing a film contraction ratio in
percentage of an Si.sub.3N.sub.4 film formed by using BTBAS and
NH.sub.3 as raw gases;
[0029] FIG. 5 is a graph showing a film stress the Si.sub.3N.sub.4
formed by using BTBAS and NH.sub.3 as raw gases;
[0030] FIG. 6 is a graph showing a etching selection ratio by
NF.sub.3 of the Si.sub.3N.sub.4 film formed by using BTBAS and
NH.sub.3 as raw gases; and
[0031] FIG. 7 is a graph showing a continuous film forming state
wherein NF.sub.3 cleaning is performed every 3,000 .ANG. thickness
of the Si.sub.3N.sub.4 film formed by using BTBAS and NH.sub.3 as
raw gases.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0032] Next, one embodiment of the present invention will be
explained with reference to the drawings below.
[0033] Since BTBAS used in the present invention is in a liquid
state at room temperature, the BTBAS is introduced into a furnace
using a BTBAS supply apparatus shown in FIGS. 2 and 3.
[0034] A BTBAS supply apparatus shown in FIG. 2 is a combination of
a thermostatic bath and gas flow rate control. A BTBAS supply
apparatus shown in FIG. 3 controls a flow rate by a combination of
a liquid flow rate control and a vaporizer.
[0035] Referring to FIG. 2, in the BTBAS supply apparatus 4, an
interior of a thermostatic bath 41 containing a BTBAS liquid raw
material 42 therein is heated to about 100.degree. C. to increase a
vapor pressure of BTBAS, thereby evaporating the BTBAS. Then, the
evaporated BTBAS is controlled in flow rate by a mass-flow
controller 43, and supplied, from a BTBAS supply port 44, to a
supply port 22 of a nozzle 21 of an vertical-type LPCVD (low
pressure CVD) film forming apparatus shown in FIG. 1. In the BTBAS
supply apparatus 4, pipes from the BTBAS liquid raw material 42 to
the BTBAS supply port 44 are covered with pipe heating members
45.
[0036] Referring to FIG. 3, in the BTBAS supply apparatus 5,
push-out gas of He or N.sub.2 introduced from a push-out gas
introducing port 53 is introduced, through a pipe 54, into a BTBAS
tank 51 containing a BTBAS liquid raw material 52 therein, thereby
pushing out the BTBAS liquid raw material 52 into a pipe 55. Then,
the BTBAS liquid raw material 52 is controlled in flow rate by a
liquid flow-rate control apparatus 56 and sent to a vaporizer 57.
In the vaporizer 57, the BTBAS liquid raw material 52 is evaporated
and supplied, from a BTBAS supply port 58, to the supply port 22 of
the nozzle 21 of the vertical-type LPCVD (low pressure CVD) film
forming apparatus shown in FIG. 1. In the BTBAS supply apparatus 5,
pipes from the vaporizer 57 to the BTBAS supply port 58 are covered
with pipe heating members 59.
[0037] Next, the vertical-type LPCVD film forming apparatus which
can preferably be used in the present embodiment will be explained
with reference to FIG. 1.
[0038] In the vertical-type LPCVD film forming apparatus 1, a
heater 13 is provided outside of a quartz reaction tube 11 so that
an interior of the quartz reaction tube 11 can be heated uniformly.
A quartz inner tube 12 is provided in the quartz reaction tube 11.
A quartz boat 14 is provided in the quartz inner tube 12, and a
plurality of semiconductor wafers are mounted on the quartz boat 14
and stacked in the vertical direction. The quartz boat 14 is
mounted on a cap 15. The quartz boat 14 is brought into and out
from the quartz inner tube 12 by vertically moving the cap 15.
Lower portions of the quartz reaction tube 11 and the quartz inner
tube 12 are opened, but they are air-tightly closed by a bottom
plate 24 of the cap 15 by moving the cap 15 upward. Apparatus
nozzles 18 and 21 are provided in lower portions of the quartz
inner tube 12 such as to bring into communication with the quartz
inner tube 12. An upper portion of the quartz inner tube 12 is
opened. A discharge port 17 is provided at a lower portion of space
between the quartz inner tube 12 and the quartz reaction tube 11 so
as to bring into communication with the space. The discharge port
17 is in communication with a vacuum pump (not shown) so as to
evacuate the quartz reaction tube 11. The raw gases supplied from
the quartz nozzles 18 and 21 are injected from injection ports 20
and 23 into the quartz inner tube 12. The gases then move in the
quartz inner tube 12 from its lower portion to its upper portion,
thereafter downwardly flows through the space between the quartz
inner tube 12 and the quartz reaction tube 11, and is discharged
from the discharge port 17.
[0039] A method for forming a silicon nitride film using the
vertical-type LPCVD film forming apparatus 1 will be explained
next.
[0040] First, the quartz boat 14 holding a large number of
semiconductor wafers 16 is inserted into the quartz inner tube 12
the inside temperature of which is maintained at 600.degree. C. or
lower.
[0041] Next, the quartz reaction tube 11 is evacuated from the
discharge port 17 to produce a vacuum therein using a vacuum pump
(not shown). In order to stabilize a temperature over the entire
surface of the wafer, it is preferable to evacuate for about one
hour.
[0042] Next, NH.sub.3 gas is charged from a charging port 19 of the
quartz nozzle 18 to purge the inside of the quartz reaction tube 11
using NH.sub.3 before BTBAS is charged.
[0043] Then, while NH.sub.3 gas is continuously charged from a
charging port 19 of the quartz nozzle 18, BTBAS is charged from the
charging port 22 of the quartz nozzle 21, and an Si.sub.3N.sub.4
film is formed on the semiconductor wafer 16.
[0044] Next, the supply of BTBAS is stopped while keep charging the
NH.sub.3 gas from the charging port 19 of the quartz nozzle 18,
thereby purging the quartz reaction tube 11 using NH.sub.3.
[0045] If only BTBAS is charged, a film different from the
Si.sub.3N.sub.4 film is formed and thus, it is preferable to purge
the quartz reaction tube 11 using NH.sub.3 before and after
deposition.
[0046] Next, N.sub.2 is allowed to flow into the quartz reaction
tube 11 from the quartz nozzle 18 to purge the quartz reaction tube
11 using N.sub.2, thereby removing NH.sub.3 in the quartz reaction
tube 11.
[0047] Then, the supply of N.sub.2 is stopped and the quartz
reaction tube 11 is evacuated to produce a vacuum therein. A set of
the purge operation using N.sub.2 and the subsequent evacuation
operation in the quartz reaction tube 11 is carried out several
times.
[0048] Thereafter, the interior of the quartz reaction tube 11 is
brought back from the vacuum state into the atmospheric 11 pressure
state. Then, the quartz boat 14 is moved down and taken out from
the quartz reaction tube 11. Then, the quartz boat 14 and the
semiconductor wafers 16 are cooled down to room temperature.
[0049] The above-described silicon nitride film forming method is
repeated, and when a thickness of the Si.sub.3N.sub.4 film formed
in the quartz reaction tube 11 reached 3,000 .ANG., NF.sub.3 gas is
introduced into the quartz reaction tube 11 from the quartz nozzle
18, thereby carrying out in situ cleaning of the Si.sub.3N.sub.4
film.
[0050] Next, this cleaning method will be explained.
[0051] First, the quartz boat 14 holding no semiconductor wafer 16
is inserted into the quartz inner tube 12 the inside temperature of
which is maintained at 600.degree. C.
[0052] Next, the quartz reaction tube 11 is evacuated from the
discharge port 17 to produce a vacuum therein using the vacuum pump
(not shown).
[0053] Then, NF.sub.3 gas is charged from the charging port 19 of
the quartz nozzle 18 at a flow rate of 500 sccm, the quartz
reaction tube 11 is evacuated to produce a vacuum therein from the
discharge port 17 using the vacuum pump (not shown), a pressure in
the quartz reaction tube 11 is maintained at 10 Torr or higher, and
the interior of the quartz reaction tube 11 is cleaned.
[0054] Then, the supply of NF.sub.3 gas is stopped, the quartz
reaction tube 11 is evacuated to provide a vacuum therein from the
discharge port 17 using the vacuum pump (not shown), and residue
NF.sub.3 gas is discharged.
[0055] Next, N.sub.2 is allowed to flow into the quartz reaction
tube 11 from the quartz nozzle 18 to purge the quartz reaction tube
11 using N.sub.2 to remove NF.sub.3 in the quartz reaction tube
11.
[0056] Then, the quartz reaction tube 11 is evacuated to produce a
vacuum therein from the discharge port 17 using the vacuum pump
(not shown). The evacuation operation and the purge operation using
N.sub.2 are carried out several times.
[0057] Thereafter, the interior of the quartz reaction tube 11 is
brought back from the vacuum state into the atmospheric pressure
state. Then, the quartz boat 14 is moved down and taken out from
the quartz reaction tube 11.
[0058] At the time of cleaning using NF.sub.3, when the
Si.sub.3N.sub.4 film is etched, the quartz is also adversely etched
at the same time. Therefore, important is condition in which the
Si.sub.3N.sub.4 film is largely etched, and the quartz (SiO.sub.2)
is etched as little as possible.
[0059] FIG. 6 shows a relation between a pressure and an etching
selection ratio. In this figure, the horizontal axis shows a
pressure in the quartz reaction tube 11, and the vertical axis
shows a ratio of an etching rate (ER (SiN)) of the Si.sub.3N.sub.4
film to an etching rate (ER (SiO.sub.2)) of the quartz. Referring
to FIG. 6, it can be found that as the pressure becomes higher, the
etching selection ratio is increased, and the quartz (SiO.sub.2)
becomes less prone to be etched. For these reason, it is preferable
to set the pressure to 10 Torr or higher. Further, by further
increasing the pressure, the etching selection ratio becomes more
excellent, and the etching rate is also enhanced and thus, the
etching time can be shortened. For example, although the etching
time is about 30 minutes when the pressure is set to 10 Torr, when
the pressure is set to 70 Torr, almost the same etching can be
carried out for about 15 minutes.
[0060] By carrying out the NF.sub.3 cleaning whenever the thickness
of the formed Si.sub.3N.sub.4 film reaches 3000 .ANG., it is
possible to form particle-free Si.sub.3N.sub.4 films 100 times
continuously in a maintenance-free manner. FIG. 7 shows data. In
FIG. 7, the horizontal axis shows the number of film forming
operations, a blank exists every three times operation. The blank
shows the NF.sub.3 cleaning operation. The vertical axis shows the
number of foreign particles of 0.18 .mu. or greater particle size
on the wafer. The cleaning operation using NF.sub.3gas was carried
out in such a manner that NF.sub.3 gas was charged into the quartz
reaction tube 11 at a flow rate of 500 sccm, the quartz reaction
tube 11 was evacuated to produce a vacuum therein, the pressure in
the quartz reaction tube 11 was maintained at 10 Torr (1,300 Pa), a
temperature therein was set to about 600.degree. C., and the
cleaning operation was carried out for 30 minutes. In FIG. 7, "top"
means a 115th wafer from the bottom, "cnt" means 66th wafer from
the bottom, and "bot" means a 16th wafer from the bottom, when 125
wafers were processed.
[0061] Time required for carrying out the NF.sub.3 cleaning
operation once is 2.5 hours (it takes 30 minutes to flow NF.sub.3
gas, and the remaining time are required for bringing up the boat
and evacuating to produce a vacuum and the like), and there is a
merit if compared with 16 hours required for conventional
maintenance.
[0062] As described above, according to the preferred embodiment of
the present invention, when Si.sub.3N.sub.4 films are formed using
BTBAS and NH.sub.3, it is possible to reduce the frequency of
maintenance as small as possible and to suppress or prevent the
generation of particles.
[0063] The entire disclosure of Japanese Patent Application No.
11-333129 filed on Nov. 24, 1999 including specification, claims,
drawings and summary are incorporated herein by reference in its
entirety.
[0064] Although various exemplary embodiments have been shown and
described, the invention is not limited to the embodiments shown.
Therefore, the scope of the invention is intended to be limited
solely by the scope of the claims that follow.
* * * * *