U.S. patent application number 10/998597 was filed with the patent office on 2006-06-01 for film and method for producing nano-particles for magnetoresistive device.
This patent application is currently assigned to TDK CORPORATION. Invention is credited to Haruyuki Morita, Isamu Sato, Rachid Sbiaa.
Application Number | 20060114616 10/998597 |
Document ID | / |
Family ID | 36567157 |
Filed Date | 2006-06-01 |
United States Patent
Application |
20060114616 |
Kind Code |
A1 |
Sbiaa; Rachid ; et
al. |
June 1, 2006 |
Film and method for producing nano-particles for magnetoresistive
device
Abstract
A method of generating a thin film for use in a spin valve of a
magnetoresistive (MR) sensor having a nano-constricted spacer is
provided. The bottom portion of the spin valve is deposited up to
the pinned layer, a deposition chamber is provided, and the spacer
layer is sputtered thereon. A main ion beam generates ions onto a
composite surface including magnetic chips and insulator material.
Simultaneously, an assisted ion beam provides ions directly to the
substrate, thus improving the softness of the free layer and
smoothness of the spacer layer. Neutralizers are also provided to
prevent ion repulsion and improve ion beam focus. As a result, a
thin film spacer can be formed, and the nano-constricted MR spin
valve having low free layer coercivity and low interlayer coupling
between the free layer and pinned layer is formed.
Inventors: |
Sbiaa; Rachid; (Tokyo,
JP) ; Sato; Isamu; (Tokyo, JP) ; Morita;
Haruyuki; (Tokyo, JP) |
Correspondence
Address: |
SUGHRUE MION, PLLC
2100 PENNSYLVANIA AVENUE, N.W.
SUITE 800
WASHINGTON
DC
20037
US
|
Assignee: |
TDK CORPORATION
|
Family ID: |
36567157 |
Appl. No.: |
10/998597 |
Filed: |
November 30, 2004 |
Current U.S.
Class: |
360/324.1 ;
257/E43.006; G9B/5.115 |
Current CPC
Class: |
G11B 5/3903 20130101;
H01F 41/18 20130101; B82Y 40/00 20130101; B82Y 25/00 20130101; B82Y
30/00 20130101; H01L 43/12 20130101; H01F 41/301 20130101; H01F
10/3227 20130101; H01F 10/3272 20130101; C23C 14/46 20130101; H01F
41/305 20130101 |
Class at
Publication: |
360/324.1 |
International
Class: |
G11B 5/33 20060101
G11B005/33; G11B 5/127 20060101 G11B005/127 |
Claims
1. A method of producing a granular film, comprising: exposing a
target to a first ion beam to generate sputtered particles, said
target including a non-magnetic material and a magnetic material;
at a substrate, receiving said sputtered particles including said
magnetic material and said non-magnetic material; and treating said
substrate with a second ion beam to form said granular film,
wherein said granular film has a coercivity field of less than
about 30 Oe.
2. The method of claim 1, further comprising: a neutralizer
generating oppositely charged ions to project ions of at least one
of the first ion beam and the second ion beam.
3. The method of claim 1, further comprising: producing one of a
pinned layer and a free layer by RF or DC sputtering.
4. The method of claim 1, further comprising: etching a surface of
the granular film until at least one of the grains is at the
surface of the granular film.
5. A magnetic element comprising: a granular spacer sandwiched
between a free layer having an adjustable magnetization direction
in response to an external field and a pinned layer having a
substantially fixed magnetization direction, said granular spacer
comprising an insulative matrix and magnetic grains, wherein at
least one of (a) the interlayer coupling between said free layer
and said pinned layer is no more than about 50 Oe, and (b) the
coercivity of said free layer is no more than about 30 Oe.
6. The magnetic element of claim 5, wherein said granular spacer is
made by the following steps: exposing a composed structure to a
first beam of ions to generate sputtered particles, said composed
structure including a plurality of chips of a magnetic material
positioned on a target; at a substrate including said pinned layer,
receiving said sputtered particles including said magnetic material
and said insulator; treating said substrate with a second beam of
ions to form said granular spacer, said sputtered magnetic
particles forming said magnetic grains, and said sputtered
insulator forming said insulative matrix.
7. The magnetic element of claim 5, wherein one of said magnetic
grains comprises a nanoparticle having a diameter less than about
10 nm.
8. The magnetic element of claim 7, wherein said magnetic grains
comprise crystalline nanoparticles having a diameter less than
about 5 nm.
9. The magnetic element of claim 5, wherein said granular spacer
has a thickness of less than about 5 nm.
10. The magnetic element of claim 5, wherein the interlayer
coupling between said free layer and said pinned layer is less than
about 50 Oe.
11. The magnetic element of claim 5, wherein the coercivity of said
free layer is less than about 30 Oe.
12. The magnetic element of claim 5, wherein said pinned layer and
said free layer each comprise at least one ferromagnetic layer.
13. The magnetic element of claim 12, wherein at least one of said
pinned layer and said free layer comprises a plurality of
ferromagnetic layers laminated via a non-conductive laminating
layer comprising at least one of Cu, Ag, Au, Ru and Rh.
14. The magnetic element of claim 5, further comprising an
antiferromagnetic (AFM) layer positioned on said pinned layer
opposite said granular spacer, said AFM layer comprising at least
one Mn alloy.
15. The magnetic element of claim 14, wherein said at least one Mn
alloy comprises PtMn and IrMn.
16. The magnetic element of claim 5, wherein said pinned layer
comprises a ferromagnetic layer including at least one of Co, Fe
and Ni, antiferromagnetically coupled to a hard magnetic layer
comprising at least one of CoSm, XPt, XPtCr and XPtCrB, where X is
at least one of Fe, Co and FeCo.
17. The magnetic element of claim 5, wherein a sensing current
flows between said free layer and said pinned layer via electrodes
at respective top and bottom sides of said magnetic element.
18. The magnetic element of claim 3, wherein said magnetic element
is one of a bottom type, a top type and a dual type.
19. A device comprising: a granular spacer sandwiched between a
free layer having an adjustable magnetization direction in response
to an external field and a pinned layer having a substantially
fixed magnetization direction, said granular spacer comprising an
insulative matrix and magnetic grains, wherein at least one of (a)
the interlayer coupling between said free layer and said pinned
layer is no more than about 50 Oe, and (b) the coercivity of said
free layer is no more than about 30 Oe.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Technical Field
[0002] The present invention relates to a method of making
nano-sized magnetic particles without using lithography, and a
granular thin film produced by the method, for a read element of a
magnetoresistive (MR) head.
[0003] 2. Related Art
[0004] In the related art magnetic recording technology such as
hard disk drives, a head is equipped with a reader and a writer
that operate independently of one another. FIGS. 1 (a) and (b)
illustrate related art magnetic recording schemes. A recording
medium 1 having a plurality of bits 3 and a track width 5 has a
magnetization 7 parallel to the plane of the recording media. As a
result, a magnetic flux is generated at the boundaries between the
bits 3. This is commonly referred to as "longitudinal magnetic
recording".
[0005] Information is written to the recording medium 1 by an
inductive write element 9, and data is read from the recording
medium 1 by a read element 11. Coils 16 supply a write current 17
to the inductive write element 9, and a read current 15 is supplied
to the read element 11. An insulating layer (not illustrated for
the sake of clarity) made of Al.sub.2O.sub.3 is deposited between
the read element 11 and the write element 9 to avoid interference
between the respective read and write signals.
[0006] The read element 11 is a sensor that operates by sensing the
resistance change as the sensor magnetization changes direction. A
shield 13 reduces the undesirable magnetic fields coming from the
media and prevents the undesired flux of adjacent bits from
interfering with the one of the bits 3 that is currently being read
by the read element 11.
[0007] Due to requirements of increased bit and track density
readable at a higher efficiency and speed, the related art magnetic
recording scheme of FIG. 1(b) has been developed. In this related
art scheme, the direction of magnetization 19 of the recording
medium 1 is perpendicular to the plane of the recording medium 1.
This is also known as "perpendicular magnetic recording". This
design provides more compact and stable recorded data. Also a soft
underlayer (not illustrated) is required to increase the writer
magnetic field efficiency. Further an intermediate layer (not
illustrated for the sake of clarity) can be used to control the
exchange coupling between the recording layer 1 and soft
underlayer.
[0008] FIGS. 2(a)-(c) illustrate various related art read heads for
the above-described magnetic recording scheme, known as "spin
valves". In the bottom type spin valve illustrated in FIG. 2(a), a
free layer 21 operates as a sensor to read the recorded data from
the recording medium 1. A spacer 23 is positioned between the free
layer 21 and a composed pinned layer 25. On the other side of the
composed pinned layer 25, there is an anti-ferromagnetic (AFM)
layer 27. In the top type spin valve illustrated in FIG. 2(b), the
position of the layers is reversed.
[0009] FIG. 2(c) illustrates a related art dual type spin valve.
Layers 21 through 25 are substantially the same as described above
with respect to FIGS. 2(a)-(b). However, an additional spacer 29 is
provided on the other side of the free layer 21, upon which a
second pinned layer 31 and a second AFM layer 33 are positioned. An
extra signal provided by the second pinned layer 31 increases the
resistance change .DELTA.R.
[0010] The direction of magnetization in the pinned layer 25 is
substantially fixed, whereas the direction of magnetization in the
free layer 21 can be changed, for example (but not by way of
limitation) depending on the effect of an external magnetic field,
such as the recording medium 1.
[0011] When the external magnetic field is applied to a reader, the
magnetization direction of the free layer 21 is altered, or
rotated, by an angle. When the flux is positive the magnetization
of the free layer 21 is rotated upward, and when the flux is
negative the magnetization direction of the free layer 21 is
rotated downward. If the applied external field changes the free
layer 21 magnetization direction to be aligned in the same way as
the composed pinned layer 25, then the resistance between the
layers is low, and electrons can more easily migrate between those
layers 21, 25.
[0012] However, when the free layer 21 has a magnetization
direction opposite to that of the composed pinned layer 25, the
resistance between the layers is high. This high resistance occurs
because it is more difficult for electrons to migrate between the
layers 21, 25. Similar to the external field, the AFM layer 27
provides an exchange coupling and keeps the magnetization of
composed pinned layer 25 substantially fixed.
[0013] The resistance change .DELTA.R when the layers 21, 25 are
parallel and anti-parallel should be high to have a highly
sensitive reader. The media bit is decreasing in size, and the
correspondingly, the magnetic field from the media bit is weaker.
As a result, it is necessary for the free layer to sense this media
flux having a reduced magnitude. Therefore, it is important for the
related art free layer to have a reduced thickness to maintain
sufficient sensitivity of the free layer. In order to provide a
high-sensitivity sensor that can sense a very weak magnetic field,
this is accomplished by reducing the free layer thickness to about
3 nm in the case of an areal recording density of 150 to 200
Gbits/in.sup.2.
[0014] However, as a result of the thin free layer, there is a
related art problem of a stronger spin transfer effect. The spin
transfer effect is substantially inversely proportional to the
thickness of the film. Thus, the stability of the free layer is
reduced. Further, there is also a need for a high resistance change
.DELTA.R between the layers 21, 25 of the related art read head. As
discussed in greater detail below, a thicker free layer results in
a higher value of .DELTA.R.
[0015] The operation of the related art read head is now described
in greater detail. In the recording media 1, flux is generated
based on polarity of adjacent bits in the case of longitudinal
magnetic recording. If two adjoining bits have negative polarity at
their boundary the flux will be negative. On the other hand, if
both of the bits have positive polarity at the boundary the flux
will be positive. The magnitude of flux determines the angle of
magnetization between the free layer and the pinned layer.
[0016] FIG. 3 illustrates a related art synthetic spin valve. The
free layer 21, the spacer 23 and the AFM layer 27 are substantially
the same as described above. However, the composed pinned layer 25
further includes a first pinned sublayer 35 separated from a second
pinned sublayer 39 by a pinned layer spacer 37. The first pinned
sublayer 35 operates according to the above-described principle
with respect to the composed pinned layer 25. The second pinned
sublayer 39 has an opposite spin state with respect to the first
pinned sublayer 35. As a result, the total pinned layer moment is
reduced due to anti-ferromagnetic coupling between the first pinned
sublayer 35 and the second pinned sublayer 39. The read head has a
composed pinned layer with a total magnetic flux close to zero, and
thus greater stability and high pinning field can be achieved than
with the single pinned layer structure. A buffer layer 28 is
deposited below the AFM layer 27 for good spin-valve growth, and a
cap 40 is provided on an upper surface of the free layer 21.
[0017] FIG. 4 illustrates the related art shielded read head. As
noted above, it is important to avoid the sensing of unintended
magnetic flux from adjacent bits during the reading of a given bit.
A cap (protective layer) layer 40 is provided on an upper surface
of the free layer 21 to protect the spin valve against oxidation
before deposition of top shield 43, by electroplating in a
separated system. Similarly, a bottom shield 45 is provided on a
lower surface of the buffer layer 28.
[0018] Related art magnetic recording schemes use a current
perpendicular to plane (CPP) head, where the sensing current flows
perpendicular to the spin valve plane. As a result, the size of the
read head can be reduced without a loss of the output read signal.
Various related art spin valves that operate in the CPP scheme are
illustrated in FIGS. 5(a)-(c), and are discussed in greater detail
below. These spin valves structurally differ primarily in the
composition of their spacer 23. The compositions and resulting
difference in operation of these effects is discussed in greater
detail below.
[0019] FIG. 5(a) illustrates a related art tunneling
magnetoresistive (TMR) head for the CPP scheme. In the TMR head,
the spacer 23 acts as an insulator, or tunnel barrier layer. Thus,
in the case of a very thin barrier that is the spacer 23, the
electrons can migrate from free layer 21 to pinned layer 25 or vice
versa without change of spin direction. Current related art TMR
heads have an increased magnetoresistance (MR) on the order of
about 30-50%.
[0020] FIG. 5(b) illustrates a related art CPP-GMR head. In this
case, the spacer 23 acts as a conductor. In the related art CPP-GMR
head, there is a need for a large resistance change .DELTA.R, and a
moderate element resistance for having a high frequency response. A
low free layer coercivity is also required so that a small media
field can be detected. The pinning field should also have a high
strength. Additional details of the CPP-GMR head are discussed in
greater detail below.
[0021] FIG. 5(c) illustrates the related art ballistic
magnetoresistance (BMR) head. In the spacer 23, which operates as
an insulator, a ferromagnetic region 47 connects the pinned layer
25 to the free layer 21. The area of contact is on the order of a
few nanometers. This is referred to as a nano-path or a
nano-contact. As a result, there is a substantially high MR, due to
electrons scattering at the domain wall created within this
nano-contact. Other factors include the spin polarization of the
ferromagnets, and the structure of the domain that is in
nano-contact with the BMR head.
[0022] In the foregoing related art heads, the spacer 23 of the
spin valve is an insulator for TMR, a conductor for GMR, and an
insulator having a magnetic nano-contact for BMR. While related art
TMR spacers are generally made of insulating materials such as
alumina, related art GMR spacers are generally made of conductive
metals, such as copper.
[0023] In the related art GMR head, resistance is minimized when
the magnetization directions (or spin states) of the free layer 21
and the pinned layer 25 are parallel and is maximized when the
magnetization directions are opposite. As noted above, the free
layer 21 has a magnetization of which the direction can be changed.
Thus, the GMR system avoids perturbation of the head output signal
by minimizing the undesired switching of the pinned layer
magnetization.
[0024] GMR depends on the degree of spin polarization of the pinned
and free layers, and the angle between their respective
magnetizations. Spin polarization depends on the difference between
the spin state (up or down) in each of the free and pinned layers.
As the free layer 21 receives the flux from the magnetic recording
media, the free layer magnetization rotates by a small angle in one
direction or the other, depending on the direction of flux. The
change in resistance between the pinned layer 25 and the free layer
21 is proportional to angle between the moments of the free layer
21 and the pinned layer 25, as discussed above. There is a
relationship between resistance change .DELTA.R and efficiency of
the reader.
[0025] As noted above, further increasing capacity of disk drives
requires a small, high-sensitivity MR head. As discussed in S. Z.
Hua et al., Phys. Review B67, 060401 (R) (2003), a high resistance
can be obtained using the foregoing related BMR concept (i.e.,
connection of at least two ferromagnetic layers to one another via
a nano-contact). The basis of the above-described BMR in disclosed
in G. Tatara et al., Phys. Review Letters, Vol. 83, 2030 (1999),
based on the thin domain wall between the two ferromagnetic
layers.
[0026] In the related art, nano-sized magnetic particles can be
made by using lithography. In another related art method of making
the particles, Japanese Patent Application No. 09-289345 discloses
a GMR magnetic head in which a granular layer 13 is formed between
laminated non-magnetic metal layers. The granular film 13 is formed
by sputtering, using a single ion beam generated in a deposition
chamber. However, there is a related art problem in that the beam
cannot stay focused, and is subject to repulsion forces. As a
result, the beam is dispersed.
[0027] Accordingly, the film produced by the related art process
has various problems and disadvantages. For example, but not by way
of limitation, as shown in Table 1 of U.S. Pat. No. 6,621,857,
which claims foreign priority to Japanese Patent Application No.
2000-132996, for a granular film with a particle size of 4 nm, the
coercivity is on the order of about 200 KA/m, or 2,500 Oersteds
(Oe). Therefore, it cannot be used for a magnetic read head due to
its high coerivity.
[0028] The related art BMR sensor must have a coercivity in the
range of about 10 to 50 Oe. As noted above, the related art
produces a layer having a coercivity of about 2,500 Oe. Thus, the
related art granular film and method of making the film cannot
produce a granular film for use with the related art BMR
sensor.
[0029] Accordingly, there is an unmet need for a granular film
having a low coercivity, and a method to produce a high-quality
film that does not experience the related art dispersion
problem.
SUMMARY OF THE INVENTION
[0030] It is an object of the present invention to overcome the
related art problems and disadvantages. However, such an object, or
any object, need not be achieved in the present invention.
[0031] Accordingly, a method of producing a granular film is
provided, including exposing a target to a first ion beam to
generate sputtered particles, the target including a non-magnetic
material and a magnetic material. Additionally, the method includes
at a substrate, receiving the sputtered particles including the
magnetic material and the non-magnetic material; and treating the
substrate with a second ion beam to form the granular film, wherein
the granular film has a coercivity field of less than about 30
Oe.
[0032] Further, a magnetic element for reading a recording medium
is provided, comprising a granular spacer sandwiched between a free
layer having an adjustable magnetization direction in response to
an external field and a pinned layer having a substantially fixed
magnetization direction, the granular spacer comprising an
insulative matrix and conductive grains, wherein at least one of
(a) the interlayer coupling between the free layer and the pinned
layer no more than about 50 Oe, and (b) the coercivity of the free
layer is no more than about 30 Oe. The foregoing may also be
implemented in a device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] FIGS. 1(a) and (b) illustrates a related art magnetic
recording scheme having in-plane and perpendicular-to-plane
magnetization, respectively;
[0034] FIGS. 2(a)-(c) illustrate related art bottom, top and dual
type spin valves;
[0035] FIG. 3 illustrates a related art synthetic spin valve for a
magnetoresistive read head;
[0036] FIG. 4 illustrates a related art synthetic read head having
a shielded structure;
[0037] FIGS. 5(a)-(c) illustrates various related art magnetic
sensor systems;
[0038] FIG. 6 illustrates an apparatus for making nano-sized
magnetic particles for a thin film layer according to an exemplary,
non-limiting embodiment of the present invention;
[0039] FIG. 7 illustrates a varying an angular relationship between
a position of a target as related to a substrate according to the
exemplary, non-limiting embodiment of the present invention;
[0040] FIG. 8 illustrates the relationship between normalized
magnetization and coercivity as measured for two samples according
to the present invention;
[0041] FIG. 9 illustrates X-ray diffraction as a function of the
angle of measurement for two samples according to the present
invention; and
[0042] FIGS. 10(a)-(b) illustrate particles produced according to
the exemplary, non-limiting method of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0043] A magnetic sensor (read head) for reading a recording medium
having a spin valve structure comprises a granular spacer, a free
layer and a pinned layer. The granular spacer is sandwiched between
the free layer and the pinned layer. The free layer has an
adjustable magnetization direction in response to an external field
generated from a medium like a hard disc, and the pinned layer has
a substantially fixed magnetization direction, The granular spacer
comprises an insulating matrix and magnetic grains. At least one of
magnetic grains serves as a nano-contact.
[0044] The foregoing film can be used in a magnetoresistive device.
For example, but not by way of limitation, the granular film can be
used as a spacer in a BMR sensor when the matrix is insulative. The
structure of the BMR sensor is discussed above, except for the
composition of the spacer.
[0045] In the present invention, the term "read head" is used
interchangeably with the term "magnetic sensor", and refers to the
overall apparatus for sensing data from a recording media. In this
regard, "magnetic sensor" is one particular type of "magnetic
element", and where magnetic sensors are used in the specification,
other magnetic elements (e.g., random access memory or the like)
may be substituted therein, as would be known by one of ordinary
skill in the art.
[0046] Additionally, the term "magnetic element" is defined to
include "magnetoresistance effect element" and/or
"magnetoresistance element" as is understand by those of ordinary
skill in this technical field. However, the present invention is
not limited thereto, and other definitions as would be understood
by those of ordinary skill in the art may be substituted therefore
without narrowing the scope of the invention. Further, the term
"spin valve" is used to refer to the specific structural makeup of
the read head layers.
[0047] In the present invention, the spacer thickness is between
about 2 nm and 10 nm. The BMR sensor has an interlayer coupling
between the free layer and the pinned layer of no more than about
50 Oe, and preferably no more than about 20 Oe. Further, the free
layer has a coercivity no more than about 30 Oe, and preferably, no
more than about 20 Oe.
[0048] Generally, the BMR sensor includes the granular spacer
separating a first ferromagnetic layer from a second ferromagnetic
layer. The spacer is made by sputtering involving a main ion beam
acting upon a substrate (also referred to herein as a target) and
an assisted ion beam generated to act upon the sputtered material
deposited on the substrate.
[0049] The target has at least two materials, such that one is
magnetic and another is a non-magnetic material that is an isolator
or a metal having higher oxidation rate than the magnetic material.
For example, but not by way of limitation, the target may be a
target having an non-magnetic matrix with conductive magnetic
material chips thereon, or a target having a lot of lumps of
non-magnetic and magnetic material.
[0050] The granular spacer includes the above-disclosed conductive
nanoparticles having a diameter of no more than about 10 nm, and
preferably, about 5 nm or less, wherein the thickness of the spacer
is less than about 5 nm. The magnetic grain (nano-particle)
comprises one of Ni, Co, Fe, and the insulating matrix (insulator)
can use an oxide or a nitride such as Al.sub.2O.sub.3, AlN,
SiO.sub.2 and Si.sub.3N.sub.4.
[0051] More specifically, in the present invention, the BMR sensor
includes a pinned layer and a free layer, each of which includes
one or more ferromagnetic layers that comprise one of Ni, Fe and
Co. For example, but not by way of limitation, a composed pinned
layer and/or a composed free layer may be part of the BMR sensor.
Because the present invention is directed to a BMR sensor, the
sensing current flows in the multilayer thickness, and electrodes
on bottom and top shields of the MR element are provided.
[0052] The composed layer comprises a least two ferromagnetic
layers coupled antiferromagnetically through a thin layer made of
at least one of Cu, Ag, Au, In, Pt, Pd, Ru and Rh. The
ferromagnetic layer comprises one of Ni, Co and Fe.
[0053] In addition to the pinned layer, an antiferromagnetic (AFM)
layer may be provided at a side of the pinned layer opposite the
spacer between the pinned layer and the free layer. The AFM layer
includes material like an Mn alloy, such as X--Mn or XY--Mn, where
X and Y are made of Pt, Ir, Pd, Ru, Rh, Os, Fe and Ni, and X is
different from Y and preferably PtMn, or IrMn. As disclosed above
with respect to the related art, the AFM layer substantially (i.e.,
except for external magnetization effects, such as "noise" from the
device in which the present invention is applied) fixes the pinned
layer magnetization direction by exchange coupling. The thickness
of the AFM layer is between about 5 to 20 nm.
[0054] As an alternative to the above-disclosed AFM layer, a
combination of a pinned layer and a hard magnet may be employed.
For example, but not by way of limitation, the pinned layer may be
made of at least one of Co, Fe and Ni, antiferromagnetically
coupled to a hard magnetic layer including at least one of CoSm,
XPt, XPtCr and XPtCrB, where X=Fe, Co or FeCo, preferably CoPt,
FePt and CoCrPt.
[0055] Thus, the present invention is directed to a thin film
layer, usable in a BMR sensor in one embodiment, and a method for
making the film and BMR sensor.
[0056] FIG. 6 illustrates a vacuum deposition chamber 1 for
producing the embodiment of the present invention, according to the
method of the present invention. A main ion beam source 2 generates
a main ion beam (first ion beam) having ions 8. For example, but
not by way of limitation, argon gas may be used in the main ion
beam. A composite target (or plate) 3 includes at least two
materials, including an insulator (e.g., Al.sub.2O.sub.3, AlN and
SiO.sub.2) and homogeneously spaced magnetic material chips (e.g.,
Ni or CoFe) stacked on the surface of the composite target 3.
[0057] While the target 3 is illustrated as square in shape, other
shapes may also be used. Further, the amount of magnetic material
chips may be varied to cover a prescribed percentage of the
insulator (e.g., an alumina insulator). For example, but not by way
of limitation, about 10 to 40 percent of the surface of the
insulator matrix may be covered with magnetized material chips. As
a result of the ions 8 provided to the composite target 3,
sputtered particles 10 of the magnetic material and the insulator
are generated.
[0058] A substrate 9 positioned on a holder 4 receives the
sputtered particles 10, which are deposited thereon. The sputtered
particles of the metal on the substrate form the grains
(nano-particles), and the sputtered particles of the insulator on
substrate form the isolating matrix surrounding the grains, so as
to form a granular spacer. At least one of the grains reaches both
surfaces of the granular spacer and thus contacts both the pinned
layer and the free layer.
[0059] Further, an assisted beam 5 generates ions substantially
simultaneously with or after the sputtering of particles 10 on
substrate 9. These ions from the assisted beam 5 are projected in
the direction of the substrate 9 and holder 4. This assisted beam 5
further optimizes the deposition process by improving the surface
morphology of the substrate 9.
[0060] Additionally, the assisted beam 5 results in good
stoichiometry, and correspondingly, good crystal growth. For
example, but not by way of limitation, the assisted beam 5 helps to
produce good alumina in the form of Al.sub.2O.sub.3, as opposed to
the undesirable AlO product.
[0061] In addition, the ion beams generated by the main ion beam
source 2 and the assisted beam 5 are acted upon by neutralizers 7
and 6, respectively. Each of the neutralizers 6, 7 generate
oppositely-charged particles 10 (e.g., electrons) to those
generated by the ion beam to project the ions of the first beam
and/or the second beam. While both neutralizers 6, 7 are shown in
FIG. 1, one or the other of the neutralizers may be used, and both
neutralizers are not required.
[0062] The neutralizers prevent the related art dispersion problem
by allowing the beam to stay homogeneous and focused, and avoid the
related art repulsion problem. Thus, a proper beam density can be
obtained. Further, the neutralizers 6, 7 prevent the target 3 from
discharging due to the accumulation of positive ions near the
surface of the target.
[0063] The geometry illustrated in FIG. 6 is merely exemplary, and
other geometries having the components in different positions
and/or sizes may also be used in the present invention. As shown in
FIG. 7, the angle between the target, substrate and holder may be
varied between about 0 and 180 degrees.
[0064] In a spacer layer of a BMR sensor, the surface can be made
substantially smoother by the use of the assisted beam 5. As a
result, the present invention is used in providing the spacer layer
of the related art BMR sensor having the above-discussed structure,
and can also be applied to other devices that use the MR effect,
such as (but not limited to) MRAM and the magnetic field sensor.
Due to the improved thin film based on the foregoing method of
making, the spacer of the BMR sensor is improved, as discussed
further below.
[0065] The present invention solves the related art problem of
producing isolated nano-particles having different sizes and
adjustable intrinsic properties. For example, but not by way of
limitation, as illustrated in FIG. 8, a target 3 with the
Al.sub.2O.sub.3 insulator matrix having 30 percent nickel on the
total surface area is compared with a target 3 of the
Al.sub.2O.sub.3 insulator matrix having 20 percent nickel on the
total surface area.
[0066] In FIG. 8, the 20 percent Ni sample has a super-paramagnetic
state, where the state of magnetization is substantially linear
with respect to the applied field. On the other hand, the 30% Ni
sample has a ferromagnetic state (i.e., hysterisis loop). The
conditions of the deposition chamber for the results obtained in
both cases shown in FIG. 8 are shown below in Table 1.
TABLE-US-00001 TABLE 1 Main beam Beam current (mA) 320 Grid voltage
(V) 1200 Negative Grid 1 (V) 325 Negative Grid 2 (V) 50 RF Power
(W) 162 Ar pressure (sccm) 20 Neutralizer Current (mA) 350 Ar
pressure (sccm) 4
[0067] Additionally, the crystallographic structure (111
orientation in the case of Ni) obtained by the present invention is
improved, as shown in FIG. 9. For the above-described two samples
of FIG. 8, X-ray diffraction was used to measure the diffraction
intensity as a function of angle of measurement. The 30 percent
sample had a substantially higher (111) peak intensity than the 20
percent sample (about 44 degrees).
[0068] As an illustration of the results of the foregoing
exemplary, non-limiting embodiment of the present invention, FIGS.
10(a)-(b) illustrate images obtained using transmission electron
microscopy (TEM). FIG. 10(a) illustrates a TEM image of Ni
nano-particles (about 20 percent Ni in the Al.sub.2O.sub.3 matrix)
obtained by ion beam sputtering, and FIG. 10(b) illustrates an
enlarged area of the foregoing TEM image.
[0069] Well-separated particles having a size of about 2 nm can be
made using the exemplary, non-limiting embodiment of the present
invention. As shown in FIG. 10(b), excellent crystal growth is
obtained, and lattice fringes 20 are observed.
[0070] In addition to the foregoing issues, the exemplary,
non-limiting embodiment of the present invention is directed to
magnetoresistive devices having a nano-constricted area (such as
BMR), and therefore, free layer coercivity and the interlayer
coupling between the free layer and the pinned layer must be
minimized. The use of the assisted beam 5 of the present invention
modifies the surface morphology of the spacer layer, so as to
substantially reduce the coercivity and interlayer coupling.
[0071] In an implementation of the foregoing exemplary,
non-limiting embodiment of the present invention, a spin valve is
produced for an MR read head. The process of making the spin valve
is as disclosed below.
[0072] First, the pinned layer and all layers therebelow are
deposited by DC or RF-sputtering a bottom part of spin valve that
includes:
[0073] NiCr (50)/PtMn (130)/CoFe (30)/Ru (8)/CoFe (40). The
thicknesses of the respective layers, in parentheses, are in
Angstroms. Once this bottom part of the spin valve has been made by
related art methods, the resulting product is transferred to ion
beam sputtering system of the present invention.
[0074] At this point, a rough etching removes 10 .ANG. extra-CoFe
and provides a cleaning of the upper surface of the pinned layer.
Then, the following structure is deposited in the deposition
chamber of the present invention, by DC or RF-sputtering, except
for the Ni--Al.sub.2O.sub.3 granular spacer, without breaking the
vacuum:
[0075] Ni--Al.sub.2O.sub.3 (15)/NiFe (30)/Ta (20). The total spin
valve with the nanoconstricted spacer was annealed at 270 degrees
Celsius for 3 hours and with 8 kOe applied magnetic field.
[0076] By the foregoing method, three samples were made, with the
deposition conditions for spacer Ni--Al.sub.2O.sub.3 being varied
in each sample as disclosed below and shown in TABLE 2. A reference
sample deposited with ion beam sputtering without using assisted
beam, and three other samples deposited with different assisted
beam currents (140 and 160 mA). These values correspond to a beam
power of 117 and 132 W respectively.
[0077] As can be seen from TABLE 2, the free layer coercivity
H.sub.c and interlayer coupling H.sub.inter between the pinned
layer and free layer are strongly dependent on assisted beam
conditions. Without the assisted beam, H.sub.inter is very high
which makes it impossible to use the reference sample in the read
head and other magnetoresistive devices. As compared with the
related art BMR requirement for free layer coercivity of 20 to 30
Oe, the reference sample has a Hc value of 75 Oe. Note that a free
layer coercivity smaller than 20 Oe is even better. Further, the
above-noted prior art has a value of about 2,500 Oe and thus is
substantially high for use in a BMR sensor.
[0078] With the assisted beam at 140 mA, there is a small decrease
of H.sub.inter for low current. For example, coercivity decreases
to 30 Oe (or about 60 percent) and interlayer coupling decreases to
360 Oe (or about 11 percent).
[0079] However, for a current of more than 140 mA a strong decrease
of H.sub.c and H.sub.inter was observed. For example, coercivity
decreased by about 33 percent from 30 Oe to 20 Oe, and interlayer
coupling decreased from about 360 to 25, or about 93 percent. This
unexpected decrease arises from an increase of only 20 mA in the
assisted beam current. TABLE-US-00002 TABLE 2 Assisted beam Hc
Hinter Current (mA) (Oe) (Oe) 0 75 405 140 30 360 160 20 25
[0080] The related art, as represented by the reference sample in
which there is no use of the assisted beam, generates results
having a substantially high Hc and Hinter as compared with the
unexpected and strong decrease in both parameters when the assisted
beam is used. In a BMR device employing such a spacer layer, the
decreased values of Hc and Hinter are due to an improved smoothness
between the free layer and the spacer.
[0081] In the present invention, preferably the top surface of the
granular layer is etched before depositing a ferromagnetic layer on
a granular film. However, the present invention is not limited
thereto, and other methods may be applied in which such an etching
is not performed.
[0082] In another exemplary, non-limiting embodiment of the present
invention, another method is provided for making the
nano-particles. According to this method, a target is used that is
made of a non-magnetic conductive material, on which magnetic chips
are uniformly arranged. After deposition of the magnetic and
non-magnetic materials simultaneously by using the above-described
main ion beam and assisted beam, oxidation is performed to oxidize
only the non-magnetic conductive part without affecting the
magnetic nano-particles.
[0083] Optionally, a smooth etching is used to make a clean upper
surface of the nano-contact. While different oxidation processes
can be used, natural oxidation is preferred. The natural oxidation
process is performed by flowing oxygen gas after deposition. In
this case, the non-magnetic conductive material should be selected
from a category having a substantially higher oxidation rate than
the magnetic material.
[0084] The deposition of the magnetoresistive device is made in one
or multi-deposition chambers. For example, a plasma-sputtering
chamber is used to deposited the buffer layer AFM layer and a
single or synthetic pinned layer. Then an ion beam deposition
chamber is provided to deposit the granular spacer after cleaning
the top surface of the pinned layer using an ion etching.
[0085] The free layer and capping layer can be deposited using the
same ion beam chamber without breaking the vacuum or an additional
different deposition chamber. The spin valve film with granular
spacer can be made in a multi-steps deposition process.
[0086] Additionally, the foregoing embodiments are generally
directed to a magnetoresistive element for a magnetoresistive read
head. This magnetoresistive read head can optionally be used in any
of a number of devices. For example, but not by way of limitation,
as discussed above, the read head can be included in a hard disk
drive (HDD) magnetic recording device. However, the present
invention is not limited thereto, and other devices that use the
ballistic magnetoresistive effect may also comprise the
magnetoresistive element of the present invention. For example, but
not by way of limitation, a magnetic random access memory (i.e., a
magnetic memory device provided with a nano-contact structure, or a
device) may also employ the present invention. Such applications of
the present invention are within the scope of the present
invention.
[0087] The present invention is not limited to the specific
above-described embodiments. It is contemplated that numerous
modifications may be made to the present invention without
departing from the spirit and scope of the invention as defined in
the following claims.
* * * * *