U.S. patent application number 11/282726 was filed with the patent office on 2006-05-04 for semiconductor device and method for fabricating the same.
This patent application is currently assigned to Matsushita Electric Industrial Co., Ltd.. Invention is credited to Yoshiyuki Arai, Fumito Itou, Yoshiaki Takeoka, Yasutake Yaguchi, Takashi Yui.
Application Number | 20060091563 11/282726 |
Document ID | / |
Family ID | 32652758 |
Filed Date | 2006-05-04 |
United States Patent
Application |
20060091563 |
Kind Code |
A1 |
Arai; Yoshiyuki ; et
al. |
May 4, 2006 |
Semiconductor device and method for fabricating the same
Abstract
A semiconductor device has a substrate having electrode pads, a
first semiconductor chip mounted on the substrate with a first
adhesion layer interposed therebetween, a second semiconductor chip
mounted on the first semiconductor chip with a second adhesion
layer interposed therebetween and having electrode pads on the
upper surface thereof, wires for bonding the electrode pads of the
substrate and the electrode pads of the second semiconductor chip
to each other, and a mold resin sealing therein the first and
second semiconductor chips and the wires. The peripheral edge
portion of the first adhesion layer is protruding outwardly from
the first semiconductor chip and the peripheral edge portion of the
second semiconductor chip is protruding outwardly beyond the
peripheral edge portion of the first semiconductor chip.
Inventors: |
Arai; Yoshiyuki; (Kyoto,
JP) ; Yui; Takashi; (Shiga, JP) ; Takeoka;
Yoshiaki; (Kyoto, JP) ; Itou; Fumito; (Osaka,
JP) ; Yaguchi; Yasutake; (Osaka, JP) |
Correspondence
Address: |
Jack Q. Lever, Jr.;McDERMOTT, WILL & EMERY
600 Thirteenth Street, N.W.
Washington
DC
20005-3096
US
|
Assignee: |
Matsushita Electric Industrial Co.,
Ltd.
Osaka
JP
|
Family ID: |
32652758 |
Appl. No.: |
11/282726 |
Filed: |
November 21, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10649741 |
Aug 28, 2003 |
6992396 |
|
|
11282726 |
Nov 21, 2005 |
|
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Current U.S.
Class: |
257/778 ;
257/E21.503; 257/E25.013 |
Current CPC
Class: |
H01L 2224/85399
20130101; H01L 2224/92247 20130101; H01L 2924/01078 20130101; H01L
23/3128 20130101; H01L 24/73 20130101; H01L 2225/0651 20130101;
H01L 2224/05554 20130101; H01L 2224/05599 20130101; H01L 2225/06555
20130101; H01L 2224/16225 20130101; H01L 2225/06582 20130101; H01L
2224/85207 20130101; H01L 24/48 20130101; H01L 2924/01079 20130101;
H01L 24/45 20130101; H01L 2225/06517 20130101; H01L 2224/73265
20130101; H01L 2224/49171 20130101; H01L 24/49 20130101; H01L
2924/15311 20130101; H01L 2224/32225 20130101; H01L 25/0657
20130101; H01L 2224/32145 20130101; H01L 2924/00014 20130101; H01L
2924/181 20130101; H01L 2224/92125 20130101; H01L 2224/73204
20130101; H01L 2224/49175 20130101; H01L 2224/48227 20130101; H01L
2224/83102 20130101; H01L 2224/45124 20130101; H01L 2224/45144
20130101; H01L 21/563 20130101; H01L 2224/73265 20130101; H01L
2224/32145 20130101; H01L 2224/48227 20130101; H01L 2224/49171
20130101; H01L 2224/48227 20130101; H01L 2924/00 20130101; H01L
2224/49175 20130101; H01L 2224/48227 20130101; H01L 2924/00
20130101; H01L 2224/73265 20130101; H01L 2224/32145 20130101; H01L
2224/48227 20130101; H01L 2924/00012 20130101; H01L 2224/73265
20130101; H01L 2224/32225 20130101; H01L 2224/48227 20130101; H01L
2924/00 20130101; H01L 2924/15311 20130101; H01L 2224/73265
20130101; H01L 2224/32225 20130101; H01L 2224/48227 20130101; H01L
2924/00 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/00012 20130101; H01L
2924/15311 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/00 20130101; H01L
2224/92247 20130101; H01L 2224/73265 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2924/00 20130101; H01L
2224/92125 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/00 20130101; H01L
2224/45124 20130101; H01L 2924/00014 20130101; H01L 2224/45144
20130101; H01L 2924/00014 20130101; H01L 2224/85399 20130101; H01L
2924/00014 20130101; H01L 2224/05599 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2224/45015 20130101; H01L
2924/207 20130101; H01L 2224/92247 20130101; H01L 2224/73265
20130101; H01L 2224/32145 20130101; H01L 2224/48227 20130101; H01L
2924/00012 20130101; H01L 2924/181 20130101; H01L 2924/00012
20130101 |
Class at
Publication: |
257/778 |
International
Class: |
H01L 23/48 20060101
H01L023/48 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 27, 2002 |
JP |
2002-381135 |
Claims
1-6. (canceled)
7. A method for fabricating a semiconductor device, the method
comprising: a first step of disposing a first semiconductor chip on
a substrate having an electrode pad; a second step of injecting an
adhesive in a space between the substrate and the first
semiconductor chip to form a first adhesion layer composed of the
adhesive and having a peripheral edge portion protruding outwardly
from the first semiconductor chip; a third step of mounting, on the
first semiconductor chip, a second semiconductor chip having an
electrode pad on a peripheral edge portion of an upper surface
thereof with a second adhesion layer interposed therebetween; a
fourth step of bonding the electrode pad of the substrate and the
electrode pad of the second semiconductor chip to each other with a
wire; and a fifth step of sealing the first and second
semiconductor chips and the wire with a mold resin, the third step
including the step of protruding a peripheral edge portion of the
second semiconductor chip outwardly beyond a peripheral edge
portion of the first semiconductor chip.
8. The method of claim 7, wherein the third step includes the step
of protruding the peripheral edge portion of the second
semiconductor chip outwardly beyond the peripheral edge portion of
the first adhesion layer.
9. The method of claim 7, wherein the first step includes the step
of disposing the first semiconductor chip such that a center of the
first semiconductor chip is offset from a center of the substrate
in a direction of an edge of the first semiconductor chip opposite
to a direction of an edge thereof from which the adhesive is
injected in the second step.
10. The method of claim 7, wherein the third step includes the step
of mounting the second semiconductor chip such that a center of the
second semiconductor chip is offset from a center of the first
semiconductor chip.
11. The method of claim 10, wherein the third step includes the
step of mounting the second semiconductor chip such that the center
of the second semiconductor chip is offset from the center of the
first semiconductor chip in a direction of an edge of the first
semiconductor chip from which the adhesive is injected in the
second step.
12. The method of claim 7, wherein the third step includes the step
of mounting the second semiconductor chip such that a center of the
second semiconductor chip substantially coincides with a center of
the substrate.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to a semiconductor device
composed of a plurality of stacked semiconductor chips and to a
method for fabricating the same.
[0002] As an example of the semiconductor device composed of a
plurality of stacked semiconductor chips, a structure has been
known in which a plurality of semiconductor chips are mounted in
stacked relation on a board termed an interposer or a substrate,
which are sealed with a mold resin (see, e.g., page 7 and FIG. 3 of
Japanese Laid-Open Patent Publication No. HEI 11-204720). This type
of semiconductor device is also referred to as a stacked package.
An object of forming the semiconductor device in such a
multilayer-chip-type structure is to increase the mounting density
of the semiconductor chips.
[0003] FIGS. 5A and 5B show a conventional multilayer-chip-type
semiconductor device, of which FIG. 5A is a cross-sectional view
and FIG. 5B is a plan view.
[0004] In FIGS. 5A and 5B, a first semiconductor chip 103 having
bumps 103a are mounted with the bumps 103a facing downward on a
substrate 101 having electrode pads 101a on the upper surface
thereof and lands 101b on the lower surface thereof with a first
adhesion layer 102 interposed therebetween. A second semiconductor
chip 105 having electrodes pads 105a on the upper surface thereof
is mounted on the first semiconductor chip 103 with a second
adhesion layer 104 interposed therebetween. The electrodes pads
105a of the second semiconductor chip and the electrode pads 101a
of the substrate 101 are electrically bonded to each other with
wires 107. The first semiconductor chip 103, the second
semiconductor chip 105, and the wires 107 are sealed with a mold
resin 108, whereby the semiconductor device is formed.
[0005] The first adhesion layer 102 is composed of a film-like
adhesive or a liquid adhesive which is filled in the entire region
other than the bumps 103a between the substrate 101 and the first
semiconductor chip 103 to firmly fix the first semiconductor chip
103 to the chip mounting region of the substrate 101. The
arrangement disperses a stress over the entire chip mounting region
of the substrate 101 and thereby increases the reliability of the
semiconductor device.
[0006] In the conventional multilayer-chip-type semiconductor
device, the peripheral edge portion of the first adhesion layer 102
is protruding outwardly from the peripheral edge portion of the
first semiconductor chip 103, as shown in FIGS. 5A and 5B. This
causes a first problem that, due to the protrusion (fillet) 102a,
the size reduction of the semiconductor device is difficult. Since
the wires 107 providing bonding between the electrode pads 105a of
the second semiconductor chip 105 and the first electrode pads 101a
of the substrate 101 should be disposed externally of the
protrusion 102a of the first adhesion layer 102, i.e., since the
electrode pads 101a of the substrate 101 should be disposed
externally of the protrusion 102a of the first adhesion layer 102,
the area of the substrate 101 is inevitably increased so that the
size reduction of the semiconductor device is difficult.
[0007] The conventional multilayer-chip-type semiconductor device
also has a second problem that the reliability thereof lowers due
to the protrusion 102a of the first adhesion layer 102. Since the
wires 107 should be disposed externally of the protrusion 102a of
the first adhesion layer 102, as described above, the lengths of
the wires 107 are increased disadvantageously. This causes a
phenomenon in which the wires 107 are deformed by the mold resin
108 in sweeping motion in the step of injecting the mold resin 108
in a mold (the phenomenon is termed wire sweep or wire flow) so
that such a defect as the breakage of the wire 107 or a short
circuit between the adjacent wires 107 is more likely to occur. As
the lengths of the wires 107 increase, the fluidity of the mold
resin 108 is reduced so that, in some cases, an unfilled portion or
a void occurs in the mold resin 108 to reduce the reliability of
the semiconductor device 108. The second problem is conspicuously
observed in a semiconductor device having the wires 107 at a high
density.
SUMMARY OF THE INVENTION
[0008] It is therefore an object of the present invention to
simultaneously solve the first and second problems and thereby
provide a smaller-size multilayer-chip-type semiconductor device
with higher reliability.
[0009] To attain the object, a semiconductor device according to
the present invention comprises: a substrate having an electrode
pad; a first semiconductor chip mounted on the substrate with a
first adhesion layer interposed therebetween; a second
semiconductor chip mounted on the first semiconductor chip with a
second adhesion layer interposed therebetween and having an
electrode pad on an upper surface thereof; a wire for bonding the
electrode pad of the substrate and the electrode pad of the second
semiconductor chip to each other; and a mold resin sealing therein
the first and second semiconductor chips and the wire, the first
adhesion layer having a peripheral edge portion protruding
outwardly from the first semiconductor chip, the second
semiconductor chip having a peripheral edge portion protruding
outwardly beyond a peripheral edge portion of the first
semiconductor chip.
[0010] In the semiconductor device according to the present
invention, the peripheral edge portion of the second semiconductor
chip is protruding outwardly beyond the peripheral edge portion of
the first semiconductor chip. The arrangement prevents the
situation in which the area of the substrate should be increased by
the magnitude of the area occupied by the portion of the first
adhesion layer protruding outwardly from the first semiconductor
chip, which is observed in the conventional embodiments, so that a
smaller-size multilayer-chip-type semiconductor device is
implemented. The arrangement also prevents the situation in which
the length of the wire should be increased by the length of the
portion thereof located outside the protrusion of the first
adhesion layer, which is also observed in the conventional
embodiment. As a result, the influence of wire sweep occurring in
the step of injecting a mold resin in a mold can be suppressed and
a short circuit between wires can be prevented so that a
semiconductor device with higher reliability is implemented.
[0011] In the semiconductor device according to the present
invention, the peripheral edge portion of the second semiconductor
chip is preferably protruding outwardly beyond the peripheral edge
portion of the first adhesion layer.
[0012] In the arrangement, the peripheral edge portion of the first
adhesion layer does not protrude outwardly beyond the peripheral
edge portion of the second semiconductor chip so that a
further-smaller-size semiconductor device with further higher
reliability is implemented.
[0013] In the semiconductor device according to the present
invention, a center of the second semiconductor chip is preferably
offset from a center of the first semiconductor chip.
[0014] The arrangement allows proper adjustment the amount of
outward protrusion of the peripheral edge portion of the second
semiconductor chip from the peripheral edge portion of the first
semiconductor chip in accordance with the amount of outward
protrusion of the peripheral edge portion of the first adhesion
layer from the first semiconductor chip.
[0015] In the semiconductor device according to the present
invention, the center of the second semiconductor chip is
preferably offset from the center of the first semiconductor chip
in a direction of an edge of the peripheral edge portion of the
first adhesion layer which is protruding most outwardly from the
first semiconductor chip.
[0016] In the arrangement, the center of the second semiconductor
chip is offset from the center of the first semiconductor chip in a
direction of the edge of the peripheral edge portion of the first
adhesion layer which is protruding most outwardly from the first
semiconductor chip so that the portion of the first adhesion layer
which is protruding most outwardly is located under the second
semiconductor chip. This implements a smaller-size semiconductor
device with higher reliability.
[0017] In the semiconductor device according to the present
invention, the center of the second semiconductor chip is
preferably offset from the center of the first semiconductor chip
in a direction of an edge of the peripheral edge portion of the
first adhesion layer which has a largest surface height from the
substrate.
[0018] In the arrangement, the portion of the first adhesion layer
which is protruding most outwardly is located under the second
semiconductor chip so that a smaller-size semiconductor device with
higher reliability is implemented.
[0019] In the semiconductor device according to the present
invention, the center of the second semiconductor chip
substantially preferably coincides with a center of the
substrate.
[0020] The arrangement allows a stress balance in the semiconductor
device to be closer to symmetry relative to the center of the
substrate and also allows the lengths of the wires and the loop
configurations thereof to be closer to uniformity at the four edge
sides of the second semiconductor chip. As a result, operation
stability in wire bonding is increased and a production yield is
increased, while the time required for the operation is
reduced.
[0021] A method for fabricating a semiconductor device according to
the present invention comprises: a first step of disposing a first
semiconductor chip on a substrate having an electrode pad; a second
step of injecting an adhesive in a space between the substrate and
the first semiconductor chip to form a first adhesion layer
composed of the adhesive and having a peripheral edge portion
protruding outwardly from the first semiconductor chip; a third
step of mounting, on the first semiconductor chip, a second
semiconductor chip having an electrode pad on a peripheral edge
portion of an upper surface thereof with a second adhesion layer
interposed therebetween; a fourth step of bonding the electrode pad
of the substrate and the electrode pad of the second semiconductor
chip to each other with a wire; and a fifth step of sealing the
first and second semiconductor chips and the wire with a mold
resin, the third step including the step of protruding a peripheral
edge portion of the second semiconductor chip outwardly beyond a
peripheral edge portion of the first semiconductor chip.
[0022] In the method for fabricating a semiconductor device
according to the present invention, the peripheral edge portion of
the second semiconductor chip is protruded outwardly beyond the
peripheral edge portion of the first semiconductor chip. The
arrangement prevents the situation in which the area of the
substrate should be increased by the area occupied by the portion
of the first adhesion layer which is protruding outwardly from the
first semiconductor chip, which is observed in the conventional
embodiments, so that a smaller-size multilayer-chip-type
semiconductor device is implemented. The arrangement also prevents
the situation in which the length of the wire should be increased
by the length of the portion thereof located outside the protrusion
of the first adhesion layer, which is also observed in the
conventional embodiment. As a result, the influence of wire sweep
occurring in the step of injecting a mold resin in a mold can be
suppressed and a short circuit between wires can be prevented so
that a semiconductor device with higher reliability is
implemented.
[0023] In the method for fabricating a semiconductor device
according to the present invention, the third step preferably
includes the step of protruding the peripheral edge portion of the
second semiconductor chip outwardly beyond the peripheral edge
portion of the first adhesion layer.
[0024] In the arrangement, the peripheral edge portion of the first
adhesion layer does not protrude outwardly beyond the peripheral
edge portion of the second semiconductor chip so that a
further-smaller-size semiconductor device with further higher
reliability is implemented.
[0025] In the method for fabricating a semiconductor device
according to the present invention, the first step preferably
includes the step of disposing the first semiconductor chip such
that a center of the first semiconductor chip is offset from a
center of the substrate in a direction of an edge of the first
semiconductor chip opposite to a direction of an edge thereof from
which the adhesive is injected in the second step.
[0026] In the arrangement, the adhesive protrudes most outwardly
from the first semiconductor chip along the edge from which the
adhesive is injected so that the portion of the adhesive which is
protruding most outwardly from the first semiconductor chip is
located under the second semiconductor chip. This implements a
smaller-size semiconductor device with higher reliability.
[0027] In the method for fabricating a semiconductor device
according to the present invention, the third step preferably
includes the step of mounting the second semiconductor chip such
that a center of the second semiconductor chip is offset from a
center of the first semiconductor chip.
[0028] The arrangement allows proper adjustment the amount of
outward protrusion of the peripheral edge portion of the second
semiconductor chip from the peripheral edge portion of the first
semiconductor chip in accordance with the amount of outward
protrusion of the peripheral edge portion of the first adhesion
layer from the first semiconductor chip.
[0029] In the method for fabricating a semiconductor device
according to the present invention, the third step preferably
includes the step of mounting the second semiconductor chip such
that the center of the second semiconductor chip is offset from the
center of the first semiconductor chip in a direction of an edge of
the first semiconductor chip from which the adhesive is injected in
the second step.
[0030] In the arrangement, the adhesive protrudes most outwardly
from the first semiconductor chip along the edge from which the
adhesive is injected so that the portion of the adhesive which is
protruding most outwardly from the first semiconductor chip is
located under the second semiconductor chip. This implements a
smaller-size semiconductor device with higher reliability.
[0031] In the method for fabricating a semiconductor device
according to the present invention, the third step preferably
includes the step of mounting the second semiconductor chip such
that a center of the second semiconductor chip substantially
coincides with a center of the substrate.
[0032] The arrangement allows a stress balance in the semiconductor
device to be closer to symmetry relative to the center of the
substrate and also allows the lengths of the wires and the loop
configurations thereof to be closer to uniformity at the four edge
sides of the second semiconductor chip. As a result, the stability
of a wire bonding operation is increased and a production yield is
increased, while the time required for the operation is
reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] FIG. 1A is a cross-sectional view of a multilayer-chip-type
semiconductor device according to a first embodiment of the present
invention and FIG. 1B is a plan view of the multilayer-chip-type
semiconductor device according to the first embodiment;
[0034] FIG. 2A is a cross-sectional view of a multilayer-chip-type
semiconductor device according to a second embodiment of the
present invention and FIG. 2B is a plan view of the
multilayer-chip-type semiconductor device according to the second
embodiment;
[0035] FIGS. 3A to 3E are cross-sectional views illustrating, in
the order of progression, the individual process steps of a method
for fabricating a multilayer-chip-type semiconductor device
according to a third embodiment of the present invention;
[0036] FIG. 4 is a cross-sectional view of the multilayer-chip-type
semiconductor device according to the fourth embodiment; and
[0037] FIG. 5A is a cross-sectional view of a conventional
multilayer-chip-type semiconductor device and FIG. 5B is a plan
view of the conventional multilayer-chip-type semiconductor
device.
DETAILED DESCRIPTION OF THE INVENTION
EMBODIMENT 1
[0038] A semiconductor device according to first embodiment of the
present invention will be described herein below with reference to
FIGS. 1A and 1B.
[0039] FIGS. 1A and 1B show a multilayer-chip-type semiconductor
device according to the first embodiment, of which FIG. 1A is a
cross-sectional view and FIG. 1B is a plan view.
[0040] In the present semiconductor device, as shown in FIGS. 1A
and 1B, a square first semiconductor chip 12 having bumps 12a is
mounted with the bumps 12a facing downward on a square substrate 10
having electrode pads 1a on the region of the upper surface thereof
located outside a chip mounting region and lands 10b on the lower
surface thereof with a first adhesion layer 11 interposed
therebetween. A square second semiconductor chip 14 having
electrode pads 14a along the peripheral edge portion of the upper
surface thereof is mounted on the first semiconductor chip 12 with
a second adhesion layer 13 interposed therebetween. The electrode
pads 14a of the second semiconductor chip 14 and the electrode pads
10a of the substrate 10 are electrically bonded to each other with
wires 15. The first semiconductor chip 12, the second semiconductor
chip 14, and the wires 15 are sealed with a mold resin 16, whereby
the semiconductor device is formed.
[0041] The substrate 10 is a sheet-like insulator internally
provided with a conductor for providing electrical bonding between
the electrode pads 10a and the lands 10b. The substrate 10 has the
function of electrically interconnecting a mother board (not
shown), on which the semiconductor device according to the first
embodiment is mounted, with the first semiconductor chip 12 and the
second semiconductor chip 14. As the insulator of the substrate 10,
ceramic such as alumina, epoxy, BT resin, polyimide, or the like is
used. As the internal conductor, copper, tungsten, or the like is
used. The lands 10b are typically arranged in a grid-like
configuration and used for the mounting of the semiconductor device
to the mother board. Although FIG. 1A shows the semiconductor
device of LGA (Land Grid Array) type using the lands 10b, a
semiconductor device of BGA (Ball Grid Array) type using metal
balls instead of the lands 10b may also be used instead.
[0042] The first adhesion layer 11 has the functions of firmly
fixing the substrate 10 and the first semiconductor chip 12 to each
other and maintaining the reliability of flip-chip bonding between
the substrate 10 and the bumps 12a. As an adhesion composing the
first adhesion layer 11, a thermosetting resin containing an epoxy
resin or the like as a main component can be used primarily. It is
possible to use an adhesive which is in a liquid state or in a
film-like configuration before it is thermoset. Selection can be
made depending on required characteristics or a formation method.
As an example of the formation method using a liquid adhesive,
there can be listed a method in which a liquid adhesive is supplied
dropwise to the outside of the first semiconductor chip 12 mounted
on the substrate 10. In accordance with the method, the liquid
adhesive is filled by capillarity into the space between the
substrate 10 and the first semiconductor chip 12 so that, if it is
set in a setting furnace thereafter, the first adhesion layer 11 is
formed. As an example of the formation method using a film-like
adhesive, on the other hand, there can be listed a method in which
a film-like adhesive is applied temporarily to the substrate 10 and
then the first semiconductor chip 12 is thermally compression
bonded onto the adhesive. Electrical bonding may also be provided
between the substrate 10 and the bumps 12a by using an anisotropic
conductive film, as the first adhesion layer 11, in which a
conductive filler is dispersed and a plated bump as the bump 12a.
Further, in the case where the first adhesive layer 11 is made of
an insulating film, electrical bonding may be provided between the
substrate 10 and the bumps 12a by piercing the film layer with the
use of a stud bump or a printed bump as the bump 12a. In this case,
the same formation method as described above is used in the case of
using a film-like adhesive. In the case of using a liquid adhesive,
however, a formation method different from the one described above
is used, which coats a liquid adhesive onto the substrate 10,
mounts the first semiconductor chip 12 on the adhesive, and then
thermosetting the liquid adhesive. In some cases, a liquid adhesion
may also be termed an underfill irrespective of the presence or
absence of a conductive filler.
[0043] The second adhesion layer 13 has the function of fixing the
first and second semiconductor chips 12 and 14 to each other. As an
adhesive composing the second adhesion layer 13, a thermosetting
resin containing an epoxy resin or the like as a main component may
be used primarily in the same manner as in the first adhesion layer
11. It is also possible to use an adhesive which is in a liquid
state or in a film-like configuration before it is thermoset.
Selection can be made depending on required characteristics or a
formation method. The second adhesion layer 13 shown in FIG. 1A
shows the case where a filter-like adhesive is used. In a typical
formation method using a film-like adhesive, the adhesive is
applied to the back surfaces of the second semiconductor chips 14
in the form of a wafer. The film-like adhesive is cut into pieces
of the same size as the individual second semiconductor chips 14
when they are separated from each other and each of the adhesive
pieces is thermally compression bonded to the first semiconductor
chip 12. In another formation method using a film-like adhesive,
the film-like adhesive is wound into a roll and a portion thereof
having a proper area is cut out of the roll by using a cutter,
which is thermally compression bonded to the first semiconductor
chip 12. Thereafter, the second semiconductor chip 14 is thermally
compression bonded onto the adhesive. As an example of the
formation method using a liquid adhesive, there can be listed a
method in which the adhesive 5 is supplied dropwise onto the first
semiconductor chip 12 at a room temperature. After the second
semiconductor chip 14 is mounted on the adhesive, the resulting
structure is placed in a setting furnace such that the liquid
adhesive is thermoset.
[0044] Although a wafer made of Si is used normally for the first
and second semiconductor chips 12 and 14, it is also possible to
use a wafer made of a compound semiconductor such as SiGe, GaAs, or
GaP instead. The first and second semiconductor chips 12 and 14 may
be made of the same material or different materials.
[0045] The bumps 12a are made of Ag, Au, Cu, a solder, or the like.
As an example of a method for forming the bumps 12a, there can be
listed printing, mask vapor deposition, stud bump formation,
plating, bump transfer, or the like. As an example of the method
for bonding the bumps 12a to the substrate 10, there can be listed
a method which melts solder bumps for bonding, a method which adds
a conductive paste to the bumps 12a for bonding, a method which
compression bonds the bumps 12a through the set shrinkage of the
first adhesion layer 11, a method which bonds the bumps 12a by
using an ultrasonic wave. Selection can be made appropriately
depending on the material of the bumps 12a.
[0046] The wires 15 are typically made of Au, Al, or the like and
has the function of providing electrical bonding between the
electrode pads 14a of the second semiconductor chip 14 and the
electrode pads 10a of the substrate 10. As a bonding method using
the wires 15, thermosonic bonding is used primarily.
[0047] The mold resin 16 is typically composed of an epoxy resin.
Depending on a molding method, an epoxy resin which is in a solid
or liquid state before setting can be used selectively. As a
formation method for the mold resin 16, a transfer method can be
listed in the case of using a solid resin and a potting or printing
method can be listed in the case of using a liquid resin. In the
transfer method, a resin formed as a tablet is melt in a mold,
injected under pressure into an inner space of the mold in which
objects to be sealed are held, and then set in a setting furnace,
so that the mold resin 16 is formed. In the potting method, a resin
is coated on objects to be sealed and then set in a set furnace, so
that the mold resin 16 is formed. In the printing method, a screen
mask is brought into close contact with objects to be sealed and a
mold resin is transferred into an opening in the screen mask by
using a printing squeezer. After the screen mask is removed, the
mold resin is set in a setting furnace, so that the mold resin 16
is formed. It is effective in preventing voids to perform the
process according to the printing method partly in a vacuum
chamber. In the mold resin 16, a silica filler is normally mixed in
a proportion of 60 wt % to 80 wt %.
[0048] In the multilayer-chip-type semiconductor device according
to the first embodiment, the peripheral edge portion of the first
adhesion layer 11 is protruding outwardly beyond the peripheral
edge portion of the first semiconductor chip 12, while the
peripheral edge portion of the second semiconductor chip 14 is
protruding more outwardly than the protrusion 11a, as shown in FIG.
1A. Briefly, the peripheral edge portion of the first adhesion
layer 11 is not protruding outwardly beyond the peripheral edge
portion of the second semiconductor chip 14. This prevents the
situation in which the area of the substrate 10 should be increased
by the magnitude of the area occupied by the protrusion 11a of the
first adhesion layer 11, which is observed in the conventional
embodiments, so that a smaller-size multilayer-chip-type
semiconductor device is implemented.
[0049] In addition, the peripheral edge portion of the first
adhesion layer 11 is not protruding outwardly beyond the peripheral
edge portion of the second semiconductor chip 14. This prevents the
situation in which the lengths of the wires 15 should be increased
by the lengths of the portions thereof located outside the
protrusion 11a of the first adhesion layer 11, which is also
observed in the conventional embodiments. As a result, the
influence of wire sweep occurring in the step of injecting a resin
before setting, which will form the mold resin 16, can be
suppressed and a short circuit between the wires can be prevented
so that a semiconductor device with higher reliability is
implemented.
[0050] A description will be given next by using a specific
example. If the first adhesion layer 11 is made of, e.g., an
adhesive composed of a film-like resin, the distance between the
peripheral edge portion of the first semiconductor chip 11 and the
peripheral edge portion of the protrusion 11a of the first
semiconductor chip 11 as the length of the protrusion 11a is about
1 mm at the maximum. If the peripheral edge portion of the second
semiconductor chip 14 is assumed to be protruding outwardly beyond
the peripheral edge portion of the first semiconductor chip 12 by
about 2 mm in each of vertical and horizontal directions, the
protrusion 11a of the first adhesion layer 11 does not protrude
beyond the peripheral edge portion of the second semiconductor chip
14.
[0051] Consideration will be given to the case where the first and
second semiconductor chips 12 and 14 are mounted by switching the
respective vertical positions thereof shown in FIG. 1A, i.e., to
the case (not shown) where the second semiconductor chip 14 is
mounted on the substrate 10 with the first adhesion layer 11
interposed therebetween, the first semiconductor chip 12 is mounted
on the second semiconductor chip 14 with the second adhesion layer
13 interposed therebetween, and the first semiconductor chip 12 and
the substrate 10 are bonded to each other with the wires 15 via the
electrode pads. As described above, it is assumed that the length
of the second semiconductor chip 14 is larger by about 2 mm than
the length of the first semiconductor chip 12 and the length of the
protrusion 11a of the first adhesion layer 11 is about 1 mm at the
maximum. In this case, it is necessary to provide the substrate 10
with an extra area corresponding to the maximum length (about 1
mm.times.2) of the protrusion 11a. In the semiconductor device
shown in FIG. 1A, by contrast, the area of the substrate 10 need
not be increased as stated previously. Compared with the case where
the first and second semiconductor chips 12 and 14 are mounted by
switching the respective vertical positions thereof, the size of
the substrate 10 need not be increased any more by about 2 mm in
each of vertical and horizontal directions so that a smaller-size
semiconductor device is implemented. Since each of the wires 15
should be extended from the first semiconductor chip 12, which is
smaller by 2 mm than the second semiconductor chip 14, to a point
external of the protrusion 11a of the first adhesion layer 11, it
is necessary to elongate the wire by about 2 mm compared with the
case of the multilayer-chip-type semiconductor device shown in FIG.
1A. Accordingly, the lengths of the wires 15 can be reduced in the
semiconductor device shown in FIG. 1A, compared with the case where
the first and second semiconductor chips 12 and 14 are mounted by
switching the respective vertical positions thereof, so that a
semiconductor device with higher reliability is implemented.
[0052] The foregoing description has been given to the case where
the peripheral edge portion of the second semiconductor chip 14 is
protruding outwardly beyond the peripheral edge portion of the
protrusion 11a of the first adhesion layer 11, as shown in FIG. 1A.
This is because the area of the substrate 10 and the lengths of the
wires 15 can be minimized in this case and hence it is most
preferable as an embodiment. However, the present embodiment is not
limited thereto. For example, a smaller-size multilayer-chip-type
semiconductor device with higher reliability can be implemented
provided that the peripheral edge portion of the second
semiconductor chip 14 is protruding even slightly outwardly beyond
the peripheral edge portion of the first semiconductor chip 12.
This is because, so long as the peripheral edge portion of the
protrusion 11a of the first adhesion layer 11 is protruding
outwardly beyond the peripheral edge portion of the second
semiconductor chip 14 even slightly, the area of the substrate 10
can be reduced by the area occupied by the portion of the
protrusion 11a located under the peripheral edge portion of the
second semiconductor chip 14 so that a smaller-size
multilayer-chip-type semiconductor device with higher reliability
is implemented.
[0053] As shown in FIG. 1B, the present embodiment has described
the case where the plan configuration of each of the first and
second semiconductor chips 12 and 14 is a rectangle. Even if the
plan configuration of each of the first and second semiconductor
chips 12 and 14 is a rectangle, however, at least a part of the
protrusion 11a of the first adhesion layer 11 is located under the
second semiconductor chip 14 provided that the peripheral edge
portion of the second semiconductor chip 14 is protruding outwardly
beyond the peripheral edge portion of the first semiconductor chip
12. As a result, a smaller-size semiconductor device with higher
reliability is implemented. It is not necessary for each of the
four sides on the periphery of the second semiconductor chip 14 to
protrude outwardly from the corresponding one of the four sides on
the periphery of the first semiconductor chip 12. If the second
semiconductor chip 14 is mounted to have a peripheral edge portion
protruding outwardly beyond the peripheral edge portion of the
first semiconductor chip 12 such that at least a part of the
peripheral edge portion of the protrusion 11a of the first adhesion
layer 11, which is protruding most outwardly from the first
semiconductor chip 12, is located under the second semiconductor
chip 14, a smaller-size semiconductor device with higher
reliability can be implemented.
EMBODIMENT 2
[0054] A semiconductor device according to a second embodiment of
the present invention will be described with reference to FIGS. 2A
and 2B.
[0055] FIGS. 2A and 2B are views for illustrating the semiconductor
device according to the second embodiment, of which FIG. 2A is a
cross-sectional view and FIG. 2B is a plan view.
[0056] In FIGS. 2A and 2B, the center axis A of the second
semiconductor chip 14, the center axis B of the first semiconductor
chip 12, and the center axis C of the substrate 10 are shown.
[0057] In the present semiconductor device, a square first
semiconductor chip 12 having bumps 12a is mounted with the bumps
12a facing downward on a square substrate 10 having electrode pads
10a on the upper surface thereof and having lands 10b on the lower
surface thereof with a first adhesion layer 11 interposed
therebetween, as shown in FIGS. 2A and 2B. A square second
semiconductor chip 14 having electrode pads 14a on the peripheral
edge portion of the upper surface thereof is mounted on the first
semiconductor chip 12 with a second adhesion layer 13 interposed
therebetween. The electrode pads 14a of the second semiconductor
chip 14 and the electrode pads 10a of the substrate 10 are
electrically bonded to each other with wires 15. The first and
second semiconductor chips 12 and 14 and the wires 15 are sealed
with a mold resin 16, whereby the semiconductor device is
formed.
[0058] As shown in FIGS. 2A and 2B, the present embodiment has
mounted the second semiconductor chip 14 on the first semiconductor
chip 12 with the second adhesion layer 13 interposed therebetween
such that the center axis A of the second semiconductor chip 14
coincides with the center axis C of the substrate 10. The present
embodiment has also mounted the first semiconductor chip 12 on the
substrate 10 with the first adhesion layer 11 interposed
therebetween while offsetting the center axis B of the first
semiconductor chip 12 from the center axis A of the second
semiconductor chip 14 and from the center axis C of the substrate
10 such that the first semiconductor chip 12 is not coaxial with
the second semiconductor chip 14 and with the substrate 10. The
direction in which the center axis B of the first semiconductor
chip 12 is offset when it is mounted is opposite to the direction
of the edge of the protrusion 11a of the first adhesion layer 11
which is protruding most outwardly from the first semiconductor
chip 12. In other words, the center axis A of the second
semiconductor chip 14 is offset from the center axis B of the first
semiconductor chip 12 in the direction of that one of the edges of
the protrusion 11a of the first adhesion layer 11 which is
protruding most outwardly from the first semiconductor chip 12.
[0059] Even if the peripheral edge portion of the protrusion 11a of
the first adhesion layer 11 is protruding outwardly from the first
semiconductor chip 12 and an amount of protrusion is non-uniform
along the edges of the first adhesion layer 11, the second
semiconductor chip can have the peripheral edge portion thereof
protruding outwardly beyond the peripheral edge portion of the
first adhesion layer 11 by mounting the first semiconductor chip 12
such that the center axis B thereof is offset from the center axis
A of the second semiconductor chip 14 and from the center axis C of
the substrate 10. This prevents the situation in which the area of
the substrate 10 should be increased by the area occupied by the
protrusion 11a of the first adhesion layer 11, which has been
observed conventionally, so that a smaller-size
multilayer-chip-type semiconductor device is implemented. This also
prevents the situation in which the lengths of the wires 15 should
be increased by the lengths of the portions of the wires 15 located
outside the protrusion 11a of the first adhesion layer 11. As a
result, the influence of wire sweep occurring in the step of
injecting the mold resin 16 in a mold can be suppressed and a short
circuit between the wires can be prevented so that the reliability
of the semiconductor device is increased.
[0060] A description will be given next to advantages obtained by
coinciding the center axis A of the second semiconductor chip 14
with the center axis C of the substrate 10.
[0061] The first advantage is that a stress balance in the
semiconductor device can be brought closer to symmetry relative to
each of the center axes A and C by coinciding the center axis A of
the second semiconductor chip 14, which is a largest structure in
the mold resin 16, with the center axis C of the substrate 10 in
the multilayer-chip-type semiconductor device. This reduces the
localization of stresses occurring when the distribution of
stresses in the semiconductor device is uneven during, e.g., reflow
mounting and prevents the degradation of the semiconductor
device.
[0062] The second advantage is that the lengths of the wires 15 and
the loop configurations thereof can be brought closer to uniformity
along the four edge sides of the second semiconductor chip 14. This
increases operation stability in the wire bonding step compared
with the case where the respective lengths of the wires 15 are not
uniform, increases a yield rate, and reduces the time required for
the step. It is also possible to achieve the same effect as
achieved by the second advantage by designing a wiring pattern for
the substrate 10 such that the lengths of the wires 15 are uniform
without coinciding the center axis A with the center axis C.
[0063] Although the description has been given thus far to the case
where the center axis A is made coincident with the center axis C,
it will easily be appreciated that the same effect is achievable by
positioning the center axes A and C such that they are nearly
coincident.
[0064] It is also possible to dispose the first and second
semiconductor chips 12 and 14 on the substrate 10 such that the
center axis B of the first semiconductor chip 12 is coincident with
the center axis C of the substrate 10 and that the center axis A of
the second semiconductor chip 14 is offset from the center axis B
of the first semiconductor chip 12 and from the center axis C of
the substrate 10 or dispose the first and second semiconductor
chips 12 and 14 on the substrate 10 such that the respective center
axes A, B, and C are offset from each other and are not coincident.
In either of the cases, if the peripheral edge of the second
semiconductor chip 14 has a portion protruding beyond the
peripheral edge portion of the first semiconductor chip 12, the
semiconductor device can be reduced in size by the area of the
portion of the protrusion ha of the first adhesion layer 11 located
under the protruding portion. The directions in which the center
axes A and B of the second and first semiconductor chips 14 and 12
are offset from the center axis C of the substrate 10 and the
amounts of offsetting in these cases may be determined
appropriately by examining the respective configurations and areas
of the first and second semiconductor chips 12 and 14, the
substrate 10, and the protrusion 11a of the first adhesion layer
11, the lengths of the wires 15, and the like such that optimum
design which enables maximum miniaturization of the semiconductor
device is performed.
EMBODIMENT 3
[0065] A semiconductor device according to a third embodiment of
the present invention will be described with reference to FIGS. 3A
to 3E.
[0066] FIGS. 3A to 3E are cross-sectional views illustrating, in
the order of progression, the individual steps of a method for
fabricating the semiconductor device according to the third
embodiment.
[0067] FIG. 3A is a view showing the first step. In the present
step termed a flip chip bonding step, a first semiconductor chip 12
is disposed on a substrate 10 having electrode pads (not shown). In
this step, positioning is performed such that bumps 12a provided on
the first semiconductor chip 12 are connected to the electrode pads
(not shown) of the substrate 10 and the first semiconductor chip 12
is mounted such that the bumps 12a face downward. It is also
possible to connect the bumps 12a to the electrode pads of the
substrate 10 by adding a conductive paste to the bumps 12a. If the
first semiconductor chip 12 is mounted on the substrate 10 such
that the center axis B of the first semiconductor chip 12 is offset
from the center axis C of the substrate 10 in a direction of the
edge opposite to the edge from which an adhesive is injected, a
portion for reserving the adhesive (hereinafter referred to as a
reserving portion) formed in injecting the adhesive can be formed
to occupy a large space.
[0068] FIG. 3B is a view showing the second step. In the present
step termed an underfill step, an adhesive is injected into the
space between the substrate 10 and the first semiconductor chip 12
to form a first adhesion layer 11 composed of the adhesive and
having a peripheral edge portion protruding outwardly from the
first semiconductor chip 12. In the case of injecting a liquid
adhesive into the space between the first semiconductor chip 12 and
the substrate 10, a nozzle 17 is positioned on the outer edge of
the first semiconductor chip 12 to eject the adhesive. If
necessary, the nozzle 17 is moved reciprocally along the edge side
from which the adhesive is injected to eject the adhesive so that
the portion for reserving a required amount of the adhesive to be
injected is formed. The adhesive is filled from the reserving
portion by the surface tension of the adhesive into the space
between the first semiconductor chip 12 and the substrate 10. When
the filling of the adhesive is completed, the injected adhesive is
set so that the first adhesion layer 11 is formed.
[0069] A specific description will be given to the protrusion 11a
of the first adhesion layer 11. If consideration is given to the
case where, e.g., the adhesive is injected from one of the edge
sides of the first semiconductor chip 12, the reserving portion is
formed around the one edge side so that the protruding length and
height of the protrusion 11a of the adhesive are larger along the
edge side than along the other three edge sides. Although fillets
are formed naturally along the other three edge sides, the
protruding lengths and heights thereof are not as large as those of
the protrusion 11a from the edge side formed with the reserving
portion. Specifically, the protruding length of the protrusion 11a
is about 2 mm at the maximum along the edge side formed with the
reserving portion, while it is about 0.5 mm along the other three
edge sides. Thus, the peripheral edge portion of the protrusion 11a
of the adhesive is larger in protruding length and height along one
of the four edge sides than along the other three edge sides.
[0070] The configuration of the protrusion 11a of the first
adhesion layer 11 can be controlled by optimizing a condition such
as the material of the adhesive to be used, an amount of injection,
an injection time, or a setting temperature. In this case, a
smaller-size semiconductor device can be implemented by controlling
the configuration of the protrusion 11a such that the protrusion
11a does not protrude beyond the peripheral edge portion of the
second semiconductor chip 14 to be mounted in a step which will be
described later.
[0071] FIG. 3C is a view showing the third step. In the present
step termed a stacked die bonding step, the second semiconductor
chip 14 having electrode pads along the peripheral edge portion of
the upper surface thereof is mounted on the first semiconductor
chip 12 with the second adhesion layer 13 interposed therebetween.
At this time, the second semiconductor chip 14 is mounted on the
first semiconductor chip 12 with the second adhesion layer 13
interposed therebetween such that the portion of the peripheral
edge of the protrusion 11a of the adhesive which is protruding most
outwardly from the first semiconductor chip 12 does not protrude
beyond the peripheral edge portion of the second semiconductor chip
14 so that a smaller-size semiconductor chip is implemented. If
consideration is given to the fact that the protruding length from
the first semiconductor chip 12 along the edge side formed with the
reserving portion is about 2 mm at the maximum, the position at
which the second semiconductor chip 14 is mounted when the second
semiconductor chip 14 is larger by 1 mm than the first
semiconductor chip 12 in each of vertical and horizontal directions
is shifted by 1 mm from the center axis B of the first
semiconductor chip 12 in the direction of the position at which the
reserving portion is formed. Consequently, the peripheral edge
portion of the second semiconductor chip 14 protrudes by 2 mm from
the peripheral edge portion of the first semiconductor chip 12 so
that the most outwardly extending portion of the protrusion 11a
does not protrude beyond the peripheral edge of the second
semiconductor chip 14.
[0072] This prevents the situation in which the area of the
substrate 10 should be increased by the area occupied by the
protrusion 11a of the first adhesion layer 11, which is observed in
the conventional embodiments, so that a smaller-size
multilayer-chip-type semiconductor device is implemented. Since the
peripheral edge portion of the first adhesion layer 11 is not
protruding from the peripheral edge portion of the second
semiconductor chip 14, the situation in which the lengths of wires
15 should be increased, which is also observed in the conventional
embodiment, is prevented. As a result, the influence of wire sweep
occurring in the step of injecting a mold resin 16 in a mold, which
will be described later, can be suppressed and a short circuit
between the wires can be prevented so that a semiconductor device
with higher reliability is increased.
[0073] Although the adhesive composing the second adhesion layer 13
between the first and second semiconductor chips 12 and 14 is shown
in the state in which it has been adhered preliminarily to the back
surface of the second semiconductor chip 14 in FIG. 3C, the type of
the adhesive and a formation method using the adhesive may be those
used in the first embodiment.
[0074] FIG. 3D is a view showing the fourth step. In the present
step termed a wire bonding step, the electrode pads of the
substrate 10 and the electrode pads of the second semiconductor
chip 14 are bonded to each other with the wires 15. As also
described in the first and second embodiments, if a structure is
designed such that the lengths of the wires 15 are uniform around
the entire circumference of the second semiconductor chip 14,
exactly the same equipment conditions can be used for wiring so
that a wiring operation is performed stably, the yield rate is
increased, and the time required for the step is reduced.
[0075] FIG. 3E is a view showing the fifth final step. In the
present step termed a sealing step, the mold resin 16 sealing
therein the first and second semiconductor chips 12 and 14 and the
wires 15 is formed. By completely setting the mold resin 16, the
semiconductor device is completed.
[0076] The foregoing description has been given to the case where a
liquid resin is used as the adhesive composing the first adhesion
layer 11. This is because, if a liquid adhesive is used, an
increase in the amount of outward protrusion of the adhesive is
observed remarkably along a specified edge side of the first
semiconductor chip 12. Even if the first adhesion layer 11 is
composed of a film-like adhesive, however, there is a case where
the amount of outward protrusion is larger along the specified edge
side, which is mainly the case where the positions and number of
the bumps 12a of the first semiconductor chip 12 are non-uniform
along the four edge sides of the first semiconductor chip 12. In
this case also, a smaller-size semiconductor device with higher
reliability can be implemented by offsetting, to a proper position,
the center axis A of the second semiconductor chip 14 mounted on
the first semiconductor chip 12 from the center axis B of the first
semiconductor chip 12.
[0077] Although the description has been given to the case where
the amount of outward protrusion of outward the first adhesion
layer 11 is largest along that one of the edges of the first
semiconductor chip 12 which serves as an injection hole for the
adhesive composing the first adhesion layer 11, the amount of
outward protrusion of the first adhesive layer 11 may also be
larger along, e.g., two of the four edges of the first
semiconductor chip 12. This is because a smaller-size semiconductor
device with higher reliability can be implemented in either case by
mounting the second semiconductor chip 14 on the first
semiconductor chip 12 such that, if the amounts of protrusion along
the two edges are the same, the protrusion 11a of the first
adhesion layer 11 from either one of the two edges does not
protrude outwardly beyond the peripheral edge portion of the second
semiconductor chip 14 and, if the amount of outward protrusion is
larger along either one of the two edges, the protrusion 11a of the
first adhesion layer 11 from the edge with a larger amount of
outward protrusion does not protrude outwardly beyond the
peripheral edge portion of the second semiconductor chip 14.
[0078] Although the description has been given to the case where
the plan configuration of each of the first and second
semiconductor chips 12 and 14 is a square with reference to FIGS.
3A to 3E, even if the plan configuration is a rectangle, a
smaller-size semiconductor device with higher reliability can be
implemented by mounting the second semiconductor chip 14 on the
first semiconductor chip 12 such that the peripheral edge portion
of the second semiconductor chip 14 protrudes beyond the peripheral
edge portion of the first semiconductor chip 12. It is not
necessary for each of the four edge sides of the second
semiconductor chip 14 to protrude beyond the peripheral edge
portion of the first semiconductor chip 12. A smaller-size
semiconductor device with higher reliability can be implemented by
mounting the second semiconductor chip 14 on the first
semiconductor chip 12 such that the portion of the peripheral edge
of the protrusion 11a of the first adhesion layer 11, which is most
outwardly protruding along one of the four side edges of the first
semiconductor chip 12, does not protrude beyond the corresponding
one of the edge sides of the second semiconductor chip 14.
EMBODIMENT 4
[0079] A semiconductor device according to a fourth embodiment of
the present invention will be described with reference to FIG.
4.
[0080] FIG. 4 is a view showing a multilayer-chip-type
semiconductor device according to the fourth embodiment.
[0081] In the present semiconductor device, a square first
semiconductor chip 12 having bumps 12a is mounted with the bumps
12a facing downward on a square substrate 10 having electrode pads
on the upper surface thereof and lands 10b on the lower surface
thereof with a first adhesion layer 11 interposed therebetween. A
square second semiconductor chip 14 having electrode pads 14a along
the peripheral edge of the upper surface thereof is mounted on the
first semiconductor chip 12 with a second adhesion layer 13
interposed therebetween. The electrode pads 14a of the second
semiconductor chip 14 and the electrode pads of the substrate 10
are electrically bonded to each other with wires 15. A square third
semiconductor chip 19 having electrode pads along the peripheral
edge portion of the upper surface thereof is mounted on the second
semiconductor chip 14 with a third adhesion layer 18 interposed
therebetween. The electrode pads of the third semiconductor chip 19
and the electrode pads of the substrate 10 are electrically bonded
to each other with wires 20. The first, second, and third
semiconductor chips 12, 14, and 19 and the wires 15 and 20 are
sealed with a mold resin 16, whereby the semiconductor device
having the semiconductor chips stacked in three layers is
formed.
[0082] In the semiconductor device having the semiconductor chips
stacked in three layers also, the multilayer-chip-type
semiconductor device can be reduced in size and the reliability
thereof can be increased by disposing the second semiconductor chip
14 on the first semiconductor chip 12 in consideration of the
protruding length and height of the protrusion 11a of the first
adhesion layer 11 such that the peripheral edge portion of the
second semiconductor chip 14 is protruding outwardly at least
beyond the peripheral edge portion of the first semiconductor chip
12.
[0083] Even in the case where the third and second semiconductor
chips 19 and 14 are bonded to each other by using wires or even in
the case where the third semiconductor chip 19 is mounted with the
circuit formation surface thereof opposing the circuit formation
surface of the second semiconductor chip 14 and flip chip bonding
is provided therebetween by using the bumps, a smaller-size
multilayer-chip-type semiconductor device with higher reliability
can also be implemented.
[0084] In the semiconductor device having the three-level
multilayer structure shown in FIG. 4 also, the second and third
semiconductor chips 14 and 19 are disposed preferably on the first
and third semiconductor chips 12 and 14 such that the respective
center axes of the second and third semiconductor chips 14 and 19
are in superimposed relation with the center axis of the substrate
10 in the same manner as in the first and second embodiments.
* * * * *