U.S. patent application number 10/956197 was filed with the patent office on 2006-04-06 for method and apparatus for polarizing electromagnetic radiation.
Invention is credited to Michael Goldstein, James Kardach, David L. Williams.
Application Number | 20060072207 10/956197 |
Document ID | / |
Family ID | 35501185 |
Filed Date | 2006-04-06 |
United States Patent
Application |
20060072207 |
Kind Code |
A1 |
Williams; David L. ; et
al. |
April 6, 2006 |
Method and apparatus for polarizing electromagnetic radiation
Abstract
According to one aspect of the invention, a method and apparatus
for polarizing electromagnetic radiation is provided. The
electromagnetic radiation may be divided into first and second
portions, substantially all of the first portion may be linearly
polarized in a first direction and substantially all of the second
portion may be linearly polarized in a second direction, the first
direction being substantially orthogonal to the second direction.
The linear polarization of at least one of the first and second
portions may be changed such that substantially all of both of the
first and second portions are linearly polarized in a third
direction. At least one of the first and second portions may be
redirected such that substantially all of both the first and second
portions are propagating in a fourth direction.
Inventors: |
Williams; David L.; (San
Jose, CA) ; Kardach; James; (Saratoga, CA) ;
Goldstein; Michael; (Ridgefield, CT) |
Correspondence
Address: |
BLAKELY SOKOLOFF TAYLOR & ZAFMAN
12400 WILSHIRE BOULEVARD
SEVENTH FLOOR
LOS ANGELES
CA
90025-1030
US
|
Family ID: |
35501185 |
Appl. No.: |
10/956197 |
Filed: |
September 30, 2004 |
Current U.S.
Class: |
359/639 |
Current CPC
Class: |
G02B 27/283 20130101;
G03F 7/70058 20130101; G03F 7/70566 20130101; G02F 1/09 20130101;
G02B 27/286 20130101; G02F 1/0136 20130101; G03F 7/7055
20130101 |
Class at
Publication: |
359/639 |
International
Class: |
G02B 27/12 20060101
G02B027/12 |
Claims
1. A method comprising: dividing electromagnetic radiation into
first and second portions, substantially all of the first portion
being linearly polarized in a first direction and substantially all
of the second portion being linearly polarized in a second
direction, the first direction being substantially orthogonal to
the second direction; changing the linear polarization of at least
one of the first and second portions such that substantially all of
both of the first and second portions are linearly polarized in a
third direction; and redirecting at least one of the first and
second portions such that substantially all of both the first and
second portions are propagating in a fourth direction.
2. The method of claim 1, wherein the electromagnetic radiation is
light.
3. The method of claim 2, wherein said dividing of the light occurs
within a polarizing beam splitter, the second portion of light
propagating from the beam splitter in substantially the first
direction.
4. The method of claim 3, wherein said changing the linear
polarization of the at least one of the first and second portions
comprises propagating the at least one of the first and second
portions through a wave-plate.
5. The method of claim 4, wherein only the first portion of light
propagates through the wave-plate.
6. The method of claim 5, wherein the first portion of light
propagates from the beam splitter about a central axis of the beam
splitter.
7. The method of claim 6, wherein said redirecting comprises:
reflecting the second portion of the light propagating from the
beam splitter with a first reflective device; and reflecting the
second portion of the light from the first reflective device with a
second reflective device, at least some of the second portion of
the light intersecting the central axis of the beam splitter after
said reflection with the second reflective device.
8. The method of claim 7, wherein said redirecting further
comprises reflecting the second portion of the light with a third
reflective device such that substantially all of both the first and
second portions of the light are propagating in the fourth
direction with the second portion of the light being on opposing
sides of the central axis of the beam splitter.
9. The method of claim 6, wherein said redirecting comprises
diffracting the first and second portions of light, the first and
second portions of light propagating in the fourth direction after
said diffraction.
10. The method of claim 9, wherein said diffracting is performed by
at least one of a hologram and a diffractive optical element.
11. A method comprising: directing a beam of electromagnetic
radiation through a substantially uniform magnetic field, the beam
having an axis, the electromagnetic radiation being substantially
linearly polarized in a first direction, flux lines of the magnetic
field extending in a second direction, the first direction being
substantially orthogonal to the second direction, a first line
extending from the axis of the beam and a first portion of the beam
being substantially perpendicular to the first direction; and
propagating a second portion of the beam through a first material,
within the magnetic field, having a first Verdet value, the second
portion of the beam being linearly polarized in a third direction
after said propagation, a second line extending from the axis of
the beam and the second portion of the beam being substantially
perpendicular to the third direction.
12. The method of claim 11, further comprising propagating a third
portion of the beam through a second material, within the magnetic
field, having a second Verdet value, the third portion of the beam
being linearly polarized in a fourth direction after said
propagation through the second material, a third line extending
from the axis of the beam and the third portion of the beam being
substantially perpendicular to the fourth direction.
13. The method of claim 12, wherein the first portion of the beam
extends from the axis of the beam to an outer edge of the beam, the
second portion of the beam extends from the axis of the beam to the
outer edge of the beam, and the third portion of the beam extends
from the axis of the beam to the outer edge of the beam.
14. The method of claim 13, wherein the electromagnetic radiation
is light.
15. The method of claim 14, wherein a cross-section of the beam
perpendicular to the axis is substantially circular and the axis of
the beam is a central axis.
16. The method of claim 15, wherein the first, second, and third
materials have substantially the same Verdet constant, the first
material has a first thickness, the second material has second
thickness, and the third material has a third thickness.
17. A semiconductor processing apparatus comprising: a substrate
support to support a semiconductor substrate; an electromagnetic
radiation source to emit electromagnetic radiation; a polarization
subsystem comprising: a polarizing beam splitter to split the
electromagnetic radiation into first and second portions,
substantially all of the first portion being linearly polarized in
a first direction and substantially all of the second portion being
linearly polarized in a second direction, the first direction being
substantially orthogonal to the second direction; at least one
wave-plate to change the linear polarization of at least one of the
first and second portions such that substantially all of both of
the first and second portions are linearly polarized in a third
direction; and at least one reflective device to reflect at least
one of the first and second portions such that substantially all of
both the first and second portions are propagating in a fourth
direction; and a reticle positioned between the polarization
subsystem and the substrate support, the first and second portions
of the electromagnetic radiation to pass through the reticle onto
the semiconductor substrate.
18. The semiconductor substrate processing apparatus of claim 17,
wherein the at least one wave-plate comprises a half wave-plate to
change the linear polarization of the first portion of
electromagnetic radiation from the first direction to the second
direction and the second and third directions are substantially
parallel.
19. The semiconductor substrate processing apparatus of claim 18,
wherein the first portion propagates from the beam splitter and
through the half wave-plate about a central axis of the beam
splitter.
20. The semiconductor substrate processing apparatus of claim 19,
wherein the at least one reflective device comprises a first mirror
to reflect the second portion of light from the beam splitter, a
second mirror to reflect the second portion of light from the first
mirror, and a third mirror having portions on opposing sides of the
central axis of the beam splitter to reflect the second portion of
light from the second mirror into the fourth direction.
21. The semiconductor substrate processing apparatus of claim 20,
wherein the third mirror has an opening therein, the first portion
of electromagnetic radiation propagating through the opening in the
fourth direction.
22. The semiconductor substrate processing apparatus of claim 17,
wherein the first and second portions of electromagnetic radiation
jointly form a beam of electromagnetic radiation, the beam having
an axis, and wherein the polarization subsystem further comprises:
a magnetic field generator to generate a substantially uniform
magnetic field, flux lines of the magnetic field extending
substantially in the fourth direction, the beam of electromagnetic
radiation to propagate through the magnetic field, a first line
extending from the axis of the beam and a first portion of the beam
being substantially perpendicular to the third direction; and a
first piece of material, having a first Verdet value, within the
magnetic field, a second portion of the beam to propagate through
the first piece of material, the second portion being linearly
polarized in a fifth direction after said propagation through the
first piece of material, a second line extending from the axis of
the beam to the second portion of the beam being substantially
perpendicular to the fifth direction.
23. The semiconductor substrate processing apparatus of claim 22,
wherein the polarization subsystem further comprises a second piece
of material, having a second Verdet value, within the magnetic
field, a third portion of the beam to propagate through the second
piece of material, the third portion of the beam being linearly
polarized in a sixth direction after said propagation through the
second piece of material, a third line extending from the axis of
the beam to the third portion of the beam being substantially
perpendicular to the sixth direction.
24. The semiconductor substrate processing apparatus of claim 23,
wherein the first portion of the beam extends from the axis of the
beam to an outer edge thereof, the second portion of the beam
extends from the axis to the outer edge of the beam, and the third
portion of the beam extends from the axis of the beam to the outer
edge of the beam.
25. The semiconductor substrate processing apparatus of claim 24,
wherein the electromagnetic radiation source is a light source, a
cross-section of the beam perpendicular to the axis of the beam is
substantially circular, the axis of the beam is a central axis, the
first, second, and third materials have substantially the same
Verdet constant, the first material has a first thickness, the
second material has a second thickness, and the third material has
a third thickness.
26. A semiconductor substrate processing apparatus comprising: a
substrate support to support a semiconductor substrate; an
electromagnetic radiation source to emit electromagnetic radiation;
a polarization subsystem comprising: a polarizing beam splitter
being radially symmetric about a central axis thereof to split the
electromagnetic radiation into first and second portions, each of
the first and second portions having a plurality of sections, the
first portion propagating in a first direction substantially
parallel to the central axis of the beam splitter, each respective
section of the first portion being linearly polarized in an a
direction parallel to a line extending between the central axis of
the beam splitter and the respective section of the first portion,
the second portion propagating radially from the central axis of
the beam splitter, each respective section of the second portion
being linearly polarized in a direction perpendicular to a line
extending between the central axis of the beam splitter and the
respective section of the second portion; a wave-plate being
radially symmetric about the central axis of the beam splitter to
change the linear polarization of the first portion of the first
portion such that each respective section of the first portion is
linearly polarized in a direction perpendicular to the line
extending between the central axis of the beam splitter and the
respective section of the first portion; and at least one
reflective device to reflect the second portion from the beam
splitter into substantially the first direction; and a reticle
positioned between the polarization subsystem and the substrate
support, the first and second portions of the electromagnetic
radiation to pass through the reticle and onto the semiconductor
wafer.
27. The semiconductor substrate processing apparatus of claim 26,
wherein the at least one reflective device comprises a first
annular mirror being radially symmetric about the central axis of
the beam splitter to reflect the second portion of electromagnetic
radiation from the beam splitter, a second annular mirror being
radially symmetric about the central axis of the beam splitter to
reflect the second portion of the electromagnetic radiation from
the first mirror, and a third annular mirror being radially
symmetric about the central axis of the beam splitter to reflect
the second portion of electromagnetic radiation from the second
mirror into the first direction.
28. The semiconductor substrate processing apparatus of claim 27,
wherein the third mirror has an opening therein, the first portion
of electromagnetic radiation to propagate through the opening in
the first direction.
29. The semiconductor substrate processing apparatus of claim 28,
wherein the electromagnetic radiation source is a light source.
Description
BACKGROUND OF THE INVENTION
[0001] 1). Field of the Invention
[0002] Embodiments of this invention relate to a method and
apparatus for polarizing electromagnetic radiation, particularly
for use in semiconductor substrate processing.
[0003] 2). Discussion of Related Art
[0004] Integrated circuits are formed on semiconductor wafers. The
wafers are then sawed (or "singulated" or "diced") into
microelectronic dice, also known as semiconductor chips, with each
chip carrying a respective integrated circuit. Each semiconductor
chip is then mounted to a package, or carrier, substrate. Often the
packages are then mounted to a motherboard, which may then be
installed into a computing system.
[0005] Numerous steps may be involved in the creation of the
integrated circuits, such as the formation and etching of various
semiconductor, insulator, and conductive layers. Before the various
layers may be etched, a layer of light-sensitive photoresist is
formed on the substrate to protect the portions of the substrate
that are not to be etched.
[0006] Machines referred to as photolithography steppers are used
to expose the desired pattern in the photoresist layer. In order to
achieve the desired pattern, light is directed through a reticle,
or "mask," and focused onto the substrate. Typically, the light
sources used in the steppers emit light that is randomly polarized,
which leads to a lack of precision in the exposure, as well as an
increase in the size of the features that can be exposed.
[0007] Recently, attempts have been made to linearly polarize the
light using a polarizing beam splitter which only captures 50
percent of the light that passes through it. However, because of
the light used often has very small wavelengths, and is thus
expensive to create, such a method is not cost effective as a large
portion of the light is wasted.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Embodiments of the invention are described by way of example
with X reference to the accompanying drawings, wherein:
[0009] FIG. 1 is a cross-sectional schematic view of a
semi-conductor substrate processing apparatus;
[0010] FIG. 2 is a perspective view of a polarization subsystem,
including a linear polarization subsystem and an annular
polarization subsystem;
[0011] FIG. 3 is a cross-sectional schematic view of the linear
polarization subsystem illustrated in FIG. 2;
[0012] FIG. 4 is a perspective view of an annular polarization
device for use in the annular polarization subsystem illustrated in
FIG. 2;
[0013] FIG. 5 is a cross-section of a beam of electromagnetic
radiation propagating from the linear polarization subsystem
illustrated in FIGS. 2 and 3;
[0014] FIG. 6 is a cross-section of a beam of electromagnetic
radiation propagating from the annular polarization subsystem
illustrated in FIG. 2;
[0015] FIGS. 7A and 7B are cross-sectional schematic views of
linear polarization subsystems according to alternative embodiments
of the present invention;
[0016] FIG. 8 is perspective view of an annular polarization device
according to an alternative embodiment of the present
invention;
[0017] FIG. 9A is a perspective view of a polarization subsystem
according to an alternative embodiment of the present invention;
and
[0018] FIG. 9B is a cross-sectional side view of the polarization
subsystem illustrated in FIG. 9A.
DETAILED DESCRIPTION OF THE INVENTION
[0019] In the following description, various aspects of the present
invention will be described, and various details set forth in order
to provide a thorough understanding of the present invention.
However, it will be apparent to those skilled in the art that the
present invention may be practiced with only some or all of the
aspects of the present invention, and the present invention may be
practiced without the specific details. In other instances,
well-known features are admitted or simplified in order not to
obscure the present invention.
[0020] It should be understood that FIGS. 1 through 9B are merely
illustrative and may not be drawn to scale.
[0021] FIG. 1 to FIG. 9B illustrate a method and apparatus for
polarizing electromagnetic radiation, according to one aspect of
the present invention. The electromagnetic radiation may be divided
into first and second portions, substantially all of the first
portion may be linearly polarized in a first direction and
substantially all of the second portion may be linearly polarized
in a second direction, the first direction being substantially
orthogonal to the second direction. The linear polarization of at
least one of the first and second portions may be changed such that
substantially all of both of the first and second portions are
linearly polarized in a third direction. At least one of the first
and second portions may be redirected such that substantially all
of both the first and second portions are propagating in a fourth
direction.
[0022] According to another aspect of the present invention, a beam
of electromagnetic radiation, having an axis, may be directed
through a substantially uniform magnetic field. The electromagnetic
radiation may be substantially linearly polarized in a first
direction, and flux lines of the magnetic field may extend in a
second direction. The first direction may be substantially
orthogonal to the second direction. A first line extending from the
axis of the beam and a first portion of the beam may be
substantially perpendicular to the first direction. A second
portion of the beam may be propagated through a first material,
within the magnetic field, having a first Verdet value. The second
portion of the beam may be linearly polarized in a third direction
after propagating through the first material. A second line
extending from the axis of the beam and the second portion of the
beam may be substantially perpendicular to the third direction.
[0023] FIG. 1 illustrates a semiconductor processing apparatus, or
a photolithographic stepper 10, according to an embodiment of the
present invention. The stepper 10 may include a frame 12, a
substrate transport subsystem 14, an exposure subsystem 16, and a
computer control console 18. The substrate transport subsystem 14
may be attached to and located at a lower portion of the frame 12
and may include a substrate support 20 and a substrate track 22.
The substrate support 20 may be sized to support semiconductor
substrates, such as wafers with diameters of, for example, 200 or
300 mm. Although not illustrated in detail, the substrate support
20 may include various actuators and motors to move the substrate
support 20 in an X/Y coordinate system which may be substantially
perpendicular to the sheet, or page, on which FIG. 1 is shown. The
substrate track 22 may include various components to place a
semiconductor substrate onto the substrate support 20 and remove
the semiconductor substrate therefrom.
[0024] The exposure subsystem 16 may be connected to the frame 12
and suspended substantially over the substrate support 20. The
exposure subsystem 16 may include an electromagnetic radiation
source 24, a polarization subsystem 26, a collector 28, a reticle
30, and imaging optics 32.
[0025] The electromagnetic radiation source 24 may be a visible
light source, such as a laser source, and be connected to the frame
12. In one embodiment, the electromagnetic radiation source 24 may
be a deep ultraviolet (DUV) light source capable of emitting
ultraviolet light having wavelengths of, for example, 248
nanometers, 193 nanometers, and/or 157 nanometers (nm).
[0026] FIGS. 2-4 illustrate the polarization subsystem 26. The
polarization subsystem 26 may include a linear polarization
subsystem 34 and an annular polarization subsystem 36. As
illustrated in FIGS. 2 and 4, the linear polarization subsystem 34
may include a polarizing beam splitter 38, a wave-plate 40, and a
reflecting system 42. The polarizing beam splitter 38 may include a
central axis 44 which extends through a central portion of the
wave-plate 40, and through a central portion of the annular
polarization subsystem 36 as illustrated in FIG. 2. The wave-plate
40 may be a half wave-plate as is commonly understood in the
art.
[0027] The reflecting system 42 may include a first reflective
device 46, a second reflective device 48, and a third reflective
device 50. The reflective devices 46, 48, and 50 may be mirrors.
The first reflective device 46, as illustrated in FIGS. 2 and 3,
may be substantially circular and be positioned such that a
reflective surface thereof faces toward the central axis 44 of the
polarizing beam splitter 38 at an angle of approximately 45
degrees. The second reflective device 48 may be substantially be
conic in shape with a circular outer edge and have a reflective
surface with an angled cross-section, as illustrated in FIG. 3. The
second reflective device 48 may be positioned a distance from the
first reflective device 42 in a direction that is substantially
parallel to the central axis 44 of the polarizing beam splitter 38.
The third reflective device 50 may be substantially circular in
shape with a circular opening 52 at a central portion thereof. The
third reflective device 50 may be positioned such that the central
axis 44 of the polarizing beam splitter 38 passes through a central
portion of the opening 52 and a reflective surface thereof faces
partially toward the second reflective device 48 at an angle of
approximately 45 degrees to the central axis 44.
[0028] Referring again to FIG. 2, the annular polarization
subsystem 36 may include a magnetic field generator 54 and an
annular polarization device 56. The magnetic field generator 54 may
include, for example, two Helmholtz coils 58, as is commonly
understood in the art. The Helnholtz coils 58 may include numerous
coils of electrically conductive wire within and be positioned a
distance apart with the central axis 44 perpendicular thereto and
passing through a central portion thereof. The annular polarization
device 56 may be cylindrically shaped and positioned such that the
central axis 44 of the polarizing beam splitter 38 passes through a
central portion thereof. Although not illustrated in detail, it
should be understood that the Helmholtz coils 58 may have a central
axis that is congruent with the central axis 44 of the polarizing
beam splitter 38. Although not illustrated, the magnetic field
generator 54 may also include a power supply that is electrically
connected to the coils of wire within the Helmholtz coils 58.
[0029] FIG. 4 illustrates the annular polarization device 56 in
greater detail. The annular polarization device 56 may be made of a
material with a high Verdet constant, such as terbium gallium
garnet (TGG), which has a Verdet constant of 0.12 min/Oe.cm at 1064
nm. The high Verdet constant material may be shaped to have a
gradually increasing thickness around a central axis 60 of the
annular polarization device 56. The central axis 60 of the annular
polarization device 56 may be congruent with the central axis 44 of
the polarizing beam splitter 38.
[0030] At a first portion 62 of the annular polarization device 56,
extending radially from the central axis 60, the high Verdet
constant material may have a first thickness 64 which may be
negligible. At a second portion 66 of the annular polarization
device 56 extending radially from the central axis 60, the high
Verdet constant material may have a second thickness 68 which may
be greater than the first thickness 64. At a third portion 70 of
the annular polarization device 56, the high Verdet constant
material may have a third thickness 72 which may be greater than
the second thickness 68. Thus, as illustrated in FIG. 4, the upper
surface of the high Verdet constant material "spirals" upwards
around the central axis 60.
[0031] As one skilled in the art will appreciate, each portion of
the annular polarization device 56 may be understood to have a
particular "Verdet value" which may be based on the particular
Verdet constant of the particular material and the thickness of the
material at each particular portion. If either the thickness of the
high Verdet constant material is increased, or the material itself
is changed to increase the Verdet constant of the material, the
amount of Faraday rotation experienced by electromagnetic radiation
as it propagates through each particular portion of the material
will increase as the Verdet value increases.
[0032] Although not illustrated for clarity, it should be
understood that all of the components of the polarizing subsystem
26 may be connected to the frame 12.
[0033] Referring again to FIG. 1, the collector 28, the reticle 30,
and the imaging optics 32 may be connected to the frame 12 and
positioned under the polarization subsystem 26. The collector 28
may be in the form of a large lens, as is commonly understood in
the art. The reticle 30 may be positioned below the collector 28
and may be in the form of "mask," as is commonly understood in the
art, and may include a plurality of openings therein. The imaging
optics 32 may be positioned below the reticle 30 and, although not
illustrated in detail, may include a plurality of lenses of varying
shapes and sizes.
[0034] The computer control console 18 may be in the form a
computer having memory for storing a set of instructions and a
processor connected to the memory for executing the instructions,
as is commonly understood in the art. The computer control console
18 may be electrically connected to both the substrate transport
subsystem 14 and the exposure subsystem 16, as well as all of the
various components thereof, and may control and coordinate the
various operations of the stepper 10.
[0035] In use, a semiconductor substrate 73, such as a wafer having
a diameter of, for example, 200 or 300 mm, may be placed on the
substrate support 20 by the substrate track 22. The substrate 73
may have a plurality of integrated circuits, divided amongst
multiple microelectronic dice, formed thereon and a layer of
photoresist deposited over the dice. The power supply of the
magnetic field generator 54 may then be activated to supply power
to the Helmholtz coils 58, resulting in a substantially uniform
magnetic field, indicated by arrows 75 in FIG. 2, being generated
between the Helmholtz coils 58. The magnet field may have a
strength of between, for example, 0.1 and 1.0 Tesla.
[0036] The electromagnetic radiation source 24 may be activated to
emit electromagnetic radiation, such as DUV light, toward the
polarization subsystem 26. Referring now to FIGS. 2 and 3, the
electromagnetic radiation 74 may enter the polarizing beam splitter
38 on a side opposite the wave-plate 40 and in a direction that is
substantially parallel with the central axis 44 of the polarizing
beam splitter 38. Although not illustrated in detail, as the
electromagnetic radiation 74 enters the polarizing beam splitter
38, the electromagnetic radiation 74 may be randomly, or
arbitrarily, polarized.
[0037] As the electromagnetic radiation 74 propagates through the
polarizing beam splitter 38 along the central axis 44, the
electromagnetic radiation 74 is split, or divided, into a first
portion 76 and a second portion 78. The first portion 76 of the
electromagnetic radiation 74 may pass through the polarizing beam
splitter 38 along the central axis 44 and into the wave-plate 40.
The second portion 78 of the electromagnetic radiation 74 may be
reflected, or redirected, in a first direction 80 which is
substantially perpendicular to the central axis 44 toward the first
reflective device 46.
[0038] It should be understood that horizontal symbols 82 may
indicate that the electromagnetic radiation 74 at that point may be
linearly polarized in a direction that is substantially parallel to
the arrows shown on the horizontal symbols 82 and/or the page on
which the horizontal symbols 82 appear. Vertical symbols 84 may
indicate that the electromagnetic radiation 74 at that point is
linearly polarized in a direction that is perpendicular to the
sheet on which the vertical symbols 84 appear. Therefore,
electromagnetic radiation associated with a horizontal symbol 82
may have a linear polarization in a direction that is orthogonal,
or perpendicular, to electromagnetic radiation that is associated
with a vertical symbol 84. As one skilled in the art will
appreciate, the directions indicated by symbols 82 and 84 may
specifically refer to the direction of linear polarization of the
E-field of the electromagnetic radiation.
[0039] Thus, as illustrated in FIG. 3, the first portion 76 of the
electromagnetic radiation 74 may become linearly polarized in a
direction as indicated by the horizontal symbols 82 as it passes
through the polarizing beam splitter 38. Likewise, the second
portion 78 of the electromagnetic radiation 74 may become linearly
polarized in a direction as indicated by the vertical symbols 84 as
it is redirected by the polarizing beam splitter 38.
[0040] As the first portion 76 of the electromagnetic radiation 74
passes through the wave-plate 40, the first portion 76 may become
linearly polarized in a direction as indicated by the vertical
symbols 84. Thus, after the first portion 76 has passed through the
wave-plate 40 both the first 76 and second 78 portion of the
electromagnetic radiation 74 may be linearly polarized in a
direction as indicated by the vertical symbols 84.
[0041] The first portion 76 of the electromagnetic radiation 74 may
continue to propagate along the central axis 44 of the polarizing
beam splitter 38 and pass through the opening 52 of the third
reflective device 50.
[0042] The second portion 78 of the electromagnetic radiation 74
may be reflected by the first reflective device 46 toward the
second reflective device 48 in a direction that is substantially
parallel to the central axis 44 of the polarizing beam splitter 38.
The second portion 78 may then be reflected by the second
reflective device 48 toward the third reflective device 50.
[0043] Still referring to FIG. 3, because of the conic shape of the
reflective surface of the second reflective device 48,
substantially all of the second portion 78 of the electromagnetic
radiation 74 may be reflected toward the reflective surface of the
third reflective device 50. In particular, substantially none of
the second portion 78 of the electromagnetic radiation 74 may be
reflected by the second reflective device 48 into the opening 52 of
the third reflective device 50. The second portion 78 of the
electromagnetic radiation 74 may be reflected by the third
reflective device 50 in a direction substantially parallel to the
central axis 44 of the polarizing beam splitter 38 away from the
polarizing beam splitter 38 and, as illustrated in FIG. 2, toward
the annular polarization subsystem 36.
[0044] As the first 76 and second 78 portions of the
electromagnetic radiation propagate away from the linear
polarization subsystem 34, the first 76 and second 78 portions may
jointly form a beam of electromagnetic radiation. FIG. 5
illustrates the beam 86 of electromagnetic radiation as it
propagates toward the annular polarization subsystem 36. The beam
86 of electromagnetic radiation may include the first portion 76
and the second portion 78 of electromagnetic radiation 74 from the
linear polarization subsystem 34. All of the electromagnetic
radiation of the beam 86 may linearly polarized in substantially
the same direction as indicated by the horizontal symbols 82.
[0045] It should be understood that because of the change of the
field of view between FIG. 3 and FIG. 5, the vertical symbols 84 of
FIG. 3 and the horizontal symbols 82 of FIG. 5 may indicate a
linear polarization in the same direction.
[0046] Referring to FIG. 5, the beam 86, when viewed in
cross-section perpendicular to the central axis 44 of the
polarizing beam splitter 38 may be substantially circular with the
central axis 44 of the polarizing beam splitter 38 being congruent
with a central axis thereof. A line 88 extending from the central
axis 44 to a first portion 90 of the beam 86, which extends from
the axis 44 to an outer edge of the beam 86, may be perpendicular
to the direction of linear polarization as indicated by the
horizontal symbols 82. Although not illustrated, it should be
understood that the same may be true for a line drawn between a
portion of the beam on a side of the central axis 44 directly
opposing the first portion 90. However, lines 92 and 96 extending
from the central axis 44 to second 94 and third 98 portions of the
beam 86, not directly opposite the first portion 90, may not be
perpendicular to the direction of linear polarization as indicated
by the horizontal symbols 82 in FIG. 5.
[0047] Referring again to FIG. 2, the beam 86 may continue to
propagate into the magnetic field generated by the magnetic field
generator 54 and into the annular polarization device 56. Although
not illustrated in detail, it should be understood that the flux
lines of the magnetic field may extend in the direction indicated
by arrows 75, and thus may be orthogonal to the direction of linear
polarization as indicated in FIG. 5.
[0048] Referring now to both FIGS. 4 and 5, the annular
polarization device 56 may be positioned so that the first portion
90 of the beam 86 of electromagnetic radiation passes through the
first portion 62 of the annular polarization device 56. The second
portion 94 of the beam 86 of electromagnetic radiation may
propagate through the second portion 66 of the annular polarization
device. The third portion 98 of the beam 86 of electromagnetic
radiation may propagate through the third portion 70 of the annular
polarization device. Due to the high Verdet constant of the
material of the annular polarization device 56, as well as the
magnetic field generated by the magnetic field generator 54, as the
electromagnetic radiation propagates through the high Verdet
constant material, the polarization of the electromagnetic
radiation may be rotated a particular amount depending upon the
thickness of the high Verdet constant material and the value of the
Verdet constant of the particular material used. Thus, after the
beam 86 has propagated through the annular polarization device 56,
the electromagnetic radiation of the beam 86 may no longer be
linearly polarized as illustrated in FIG. 5.
[0049] FIG. 6 illustrates the beam 86 of electromagnetic radiation
after having propagated through the annular polarization device 56.
The beam 86 may now be "annularly" polarized as illustrated in FIG.
6. Both the first 76 and second 78 portions of electromagnetic
radiation may now be polarized such that a line drawn between the
central axis 44 and each respective portion, or section, of either
the first 76 or second 78 portions will be perpendicular to the
linear polarization of each respective section. Thus, as
illustrated in FIG. 6, the line 88 between the central axis 44 and
the first portion 90 of the beam may remain perpendicular to the
direction of linear polarization as indicated by the horizontal
symbol 82.sub.1. Likewise, the line 92 drawn between the central
axis 44 and the second portion 94 of the beam 86 may now be
perpendicular to the direction of linear polarization as indicated
by the horizontal symbol 82.sub.2 which indicates the direction of
linear polarization for the second section 94. The same may be true
for the third section 98, as the line 96 from the central axis 44
to the third portion 98 of the beam 86 may be perpendicular to the
direction of linear polarization indicated by the horizontal symbol
82.sub.3 for the third section 98.
[0050] Referring to FIGS. 1 and 2, the beam of electromagnetic
radiation may then propagate from the annular polarization
subsystem 36 and into the collector 28. The collector 28 may focus
the electromagnetic radiation through the reticle 30 and into the
imaging optics 32. The imaging optics 32 may further focus the
electromagnetic radiation before the electromagnetic radiation is
directed onto the semiconductor substrate 73, where the
electromagnetic radiation exposes the layer of photoresist, as is
commonly understood in the art. It should be understood that the
electromagnetic radiation may retain the annular polarization, as
illustrated in FIG. 6, as the photoresist is exposed.
[0051] The wafer support 20 may move the semiconductor substrate 73
in the X/Y coordinate system so that individual sections of the
semiconductor substrate 73, which may correspond with one or more
of the dice, may be exposed one at a time, as is common understood
in the art. When the entire photoresist layer has been exposed, the
substrate track 22 may remove the semiconductor substrate 73 from
the substrate support 22, and replace it with a second
semiconductor substrate to be exposed as described above.
[0052] One advantage is that the electromagnetic radiation, as it
exposes the photoresist layer, may be annularly polarized, as
illustrated in FIG. 6. Therefore, size of the features exposed on
the semiconductor substrate may be minimized and the accuracy with
which the features are exposed can be increased. Another advantage
is that the electromagnetic radiation may be linearly polarized,
and annularly polarized, without a substantial portion of the
electromagnetic radiation being lost, as all of the electromagnetic
radiation is directed onto the substrate. Therefore, an increased
amount of electromagnetic radiation may be directed onto the
semiconductor wafer, increasing the exposure rate of the stepper. A
further advantage is that the polarization of the electromagnetic
radiation may be controlled regardless of the polarization of the
electromagnetic radiation being emitted by the electromagnetic
radiation source.
[0053] FIG. 7A illustrates a linear polarization subsystem 100
according to another embodiment of the present invention. The
linear polarization subsystem 100 may include a polarizing beam
splitter 102, a wave-plate 104, a reflecting system 106, including
a first 108 and a second 110 reflective device, and a defractive
optical element 112. The polarizing beam splitter 102 and the
wave-plate 104 may be similar to the polarizing beam splitter 38
and the wave-plate 40 illustrated in FIGS. 2 and 3. Referring again
to FIG. 7A, the polarizing beam splitter 102 may have a central
axis 114 extending through a central portion thereof. The first
reflective device may be positioned a distance away from the
polarizing beam splitter 102 in a direction that is substantially
perpendicular to the central axis 114 so that a reflective surface
thereof faces the central axis 114 at an angle. The defractive
optical element 112 may be positioned along the central axis 114 of
the polarizing beam splitter 102. The second reflective device 110
may be positioned on a side of the defractive optical element 112
opposite the polarizing beam splitter 102.
[0054] In use, the linear polarization subsystem 110 may be used
within the stepper 10 illustrated in FIG. 1 in place of the linear
polarization subsystem 34 illustrated in FIGS. 2 and 3.
Electromagnetic radiation 116 may be directed into the polarizing
beam splitter 102 in a direction substantially parallel to the
central axis 114 toward the detractive optical element 112. The
electromagnetic radiation may be split, or divided, into a first
portion 118 and a second portion 120 by the polarizing beam
splitter 102. The first portion 118 may propagate through the
polarizing beam splitter 102 in a direction substantially parallel
to the central axis 114 and may be linearly polarized in a
direction as indicated by the horizontal symbols 82. The second
portion 120 of the electromagnetic radiation 116 may be redirected
toward the first reflective device 108 and have a linear
polarization in a direction as indicated by the vertical symbols 84
as it propagates from the polarizing beam splitter 102.
[0055] As the first portion 118 of the electromagnetic radiation
116 passes through the wave-plate 104, the linear polarization of
the first portion 118 may be changed such that the first portion
118 is linearly polarized in a direction as indicated by the
vertical symbols 84. The first portion 118 of the electromagnetic
radiation 116 may then propagate to the defractive optical element
112 where it may be defracted away from the defractive optical
element 112 in a direction that is substantially perpendicular to
the defractive optical element 112.
[0056] The second portion 120 of the electromagnetic radiation 116
may be reflected by the first reflective device 108, through the
electromagnetic radiation 116 propagating from the defractive
optical element 112, to the second reflective device 110. The
second portion 120 may be reflected by the second reflective device
110 toward the detractive optical element 112 and be defracted away
from the defractive optical element 112 in a direction
substantially parallel to the first portion 118.
[0057] FIG. 7B illustrates a linear polarization subsystem 122
according to a further embodiment of the present invention. The
linear polarization subsystem 122 may include a polarizing beam
splitter 124, a wave-plate 126, a reflecting system 128, including
a first 130 and a second 132 reflecting device, and a volume
hologram 134. The polarizing beam splitter 124, the wave-plate 126,
and the first reflective device 130 may be similar to the
polarizing beam splitter 38, the wave-plate 40, and the first
reflective device 46 illustrated in FIGS. 2 and 3. Referring again
to FIG. 7B, the second reflective device 132 may be positioned a
distance from the first reflective device 130 in a direction that
is substantially parallel to a central axis 136 of the polarizing
beam splitter 124 with a reflective surface of the second
reflective device 132 facing the central axis 136 at an angle of
approximately 45 degrees. The hologram 134 may be positioned along
the central axis 136 of the polarizing beam splitter 124 on a side
of the wave-plate 126 opposite the polarizing beam splitter
124.
[0058] In use, electromagnetic radiation 138 may be directed into
the polarizing beam splitter 124 toward the hologram 134 in a
direction that is substantially parallel to the central axis 136 of
the polarizing beam splitter 124. The polarizing beam splitter 124
may split, or divide, the electromagnetic radiation 138 into a
first portion 140 and a second portion 142. The first portion 140
of the electromagnetic radiation 138 may propagate through the
polarizing beam splitter 124 in a direction that is substantially
parallel to the central axis 136 and may be linearly polarized in a
direction as indicated by the horizontal symbols 82. The first
portion 140 may then pass through the wave-plate 126 where the
linear polarization of the first portion 140 may be changed to a
linear polarization in a direction as indicated by the vertical
symbols 84. The first portion 140 of the electromagnetic radiation
138 may then propagate into the hologram 134 in a direction that is
substantially parallel to the central axis 136 of the polarizing
beam splitter 124.
[0059] The second portion 142 of the electromagnetic radiation 138
may be redirected by the polarizing beam splitter 124 toward the
first reflective device 130 in a direction that is substantially
perpendicular to the central axis 136 with a linear polarization in
a direction as indicated by the vertical symbols 84. The second
portion of 142 of the electromagnetic radiation 138 may then be
reflected by the first reflective device 130 toward the second
reflective device 132 in a direction that is substantially parallel
to the central axis 136 of the polarizing beam splitter 124. The
second portion 142 may then be reflected by the second reflective
device toward the hologram 134 in a direction that is substantially
perpendicular to the central axis 136 of the polarizing beam
splitter 124. As is commonly understood in the art, the first 140
and second 142 portions of electromagnetic radiation 138 may be
co-linearly diffracted by the hologram 134 and redirected away from
the central axis 136 of the polarizing beam splitter 124 at an
angle of approximately 45 degrees from the central axis 136.
[0060] FIG. 8 illustrates an annular polarization device 144
according to another embodiment of the present invention. The
annular polarization device 144 may be made of similar materials
and work according to the same principles as the annular
polarization device 56 illustrated in FIG. 4. Referring again to
FIG. 8, the annular polarization device 144, however, may include a
high Verdet constant material with a gradually increasing thickness
approximately half way around a central axis 146 thereof. The high
Verdet constant material may be shaped such that a first portion
148 and a second portion 150, at an opposing side of the central
axis 146, have approximately the same thickness. As will be
appreciated by one skilled in the art, the high Verdet constant
material and the varying thicknesses of the high Verdet constant
material may be selected such that a linearly polarized beam of
electromagnetic radiation, similar to that illustrated in FIG. 5,
may be propagated through the annular polarization device 144 such
that when the beam of electromagnetic radiation leaves the annular
polarization device 144, the beam may have an annular polarization
similar to that illustrated in FIG. 6.
[0061] Other embodiments of the annular polarization device may be
glass or crystal structures, such as garnet, doped with materials,
such as rare-earth ions, to vary the Verdet constant in the
material used in the annular polarization device so that the
thickness of the material need not vary as much as the example
illustrated yet still have the varying Verdet value as described
above. Other materials may be used to as the material of the
annular polarization device such as an engineered polymer, a doped
glass, and yttrium iron garnet. Additionally, the magnetic field in
which the annular polarization device is placed may not be uniform,
but may be varied in order to change the Verdet value of particular
portions of the device. The magnetic field may be produced by
different types of magnetic field generators, such as a samarium
cobalt magnet.
[0062] FIGS. 9A and 9B illustrate a polarization subsystem 152
according to another embodiment of the present invention. The
polarization subsystem 152 may include a polarizing beam splitter
154 having a central axis 156, a wave-plate 158, and a reflecting
system 160. The reflecting system 160 may include a first
reflective device 162, a second reflective device 164, and a third
reflective device 166. The polarizing beam splitter 154, the
wave-plate 158, the first reflective device 162, the second
reflective device 164, and the third reflective device 166 may be
radially symmetric about the central axis 156 of the polarizing
beam splitter 154.
[0063] The first reflective device 162 may be annularly shaped and
positioned at a distance from the polarizing beam splitter 154 in a
direction that is substantially perpendicular to the central axis
156 of the polarizing beam splitter 154. The first reflective
device 162 may have a reflective surface that faces toward the
wave-plate 158 in a direction that is approximately 45 degrees to
the central axis 156. The second reflective device 164 may be
similar to the first reflective device, however, the second
reflective device 164 may be positioned a distance away from the
first reflective device 162 in a direction that is substantially
parallel to the central axis 156 of the polarizing beam splitter
154 and have a reflective surface that faces toward the wave-plate
158 in a direction that is approximately 45 degrees to the central
axis 156. The third reflective 166 device may be annularly shaped
and positioned within the second reflective device 164 and lie
directly between the second reflective device 164 and the central
axis 156. The third reflective device 166 may have a reflective
surface which faces away from the wave-plate 158 and the central
axis 156 at an angle that is approximately 45 degrees to the
central axis 156.
[0064] In use, electromagnetic radiation 168 may be directed into a
side of the polarizing beam splitter 154 opposite the wave-plate
158 in a direction that is substantially parallel to the central
axis 156. As the electromagnetic radiation 168 passes through the
polarizing beam splitter 154, the electromagnetic radiation may be
split, or divided, into a first portion 170 and a second portion
172.
[0065] As illustrated in FIG. 9B, when the first portion 170 of the
electromagnetic radiation 168 leaves the polarizing beam splitter
154 in a direction that is substantially parallel to the central
axis 156, the first portion 170 may be linearly polarized in a
direction as indicated by the horizontal symbols 82. As illustrated
in FIG. 9B, the horizontal symbols 82 indicate that the first
portion 170 of electromagnetic radiation 168, as it leaves the
polarizing beam splitter 154, may be linearly polarized in a
direction that is parallel to radial lines extending from the
central axis 156.
[0066] Although only one cross-section of the polarization
subsystem 152 is illustrated, it should be understood that the
linear polarization of the electromagnetic radiation 168 may appear
identical in any cross-section of the polarization subsystem 152
taken at the central axis 156 of the polarizing beam splitter 154,
similarly to the cross-section illustrated in FIG. 9B.
[0067] The first portion 170 of the electromagnetic radiation 168
may then pass through the wave-plate 158. The first portion 170 of
the electromagnetic radiation 168 may then be linearly polarized in
a direction as indicated by the vertical symbols 84. In other
words, as illustrated in FIG. 9B, after the first portion 170
passes through the wave-plate 158, the first portion 170 is
linearly polarized in a direction that is perpendicular to lines
extending radially from the central axis 156 of the polarizing beam
splitter 154.
[0068] The second portion 172 of the electromagnetic radiation 168
may be redirected radially away from the central axis 156 and be
linearly polarized in a direction as indicated by the vertical
symbols 84. In other words, as illustrated in FIG. 9B, after the
second portion 172 of the electromagnetic radiation 168 propagates
radially from the polarizing beam splitter 154, the second portion
172 may be linearly polarized in a direction that is perpendicular
to radial lines extending from the central axis 156 of the
polarizing beam splitter 154. The second portion 172 may be
reflected by the first reflective device 162 toward the second
reflective device 164 and reflected by the second reflective device
164 toward the third reflective device 166. The third reflective
device 166 may reflect the second portion 172 of the
electromagnetic radiation 168 away from the wave-plate 158 in a
direction that is substantially parallel to the central axis
156.
[0069] Thus, as both the first 170 and second 172 portions of the
electromagnetic radiation 168 propagate from the polarization
subsystem 152, both the first 170 and second 172 portions are
linearly polarized in a direction that is perpendicular to lines
extending radially from the central axis 156 of the polarizing beam
splitter 154. Therefore, a beam of electromagnetic radiation
propagating from the polarization subsystem 152 may have an annular
polarization similar to that illustrated in FIG. 6.
[0070] While certain exemplary embodiments have been described and
shown in the accompanying drawings, it is to be understood that
such embodiments are merely illustrative and not restrictive of the
current invention, and that this invention is not restricted to the
specific constructions and arrangements shown and described since
modifications may occur to those ordinarily skilled in the art
* * * * *