U.S. patent application number 10/928467 was filed with the patent office on 2006-03-02 for methods of forming vertical transistor structures.
Invention is credited to Cem Basceri, H. Montgomery Manning, Kunal R. Parekh, Gurtej S. Sandhu.
Application Number | 20060046392 10/928467 |
Document ID | / |
Family ID | 35943840 |
Filed Date | 2006-03-02 |
United States Patent
Application |
20060046392 |
Kind Code |
A1 |
Manning; H. Montgomery ; et
al. |
March 2, 2006 |
Methods of forming vertical transistor structures
Abstract
The invention includes methods in which an angled implant is
utilized to self-align a source/drain region implant with the top
edge of a gateline of a vertical transistor structure. The
invention also includes methods in which an angled implant is
utilized to implant dopant beneath the gateline of a vertical
transistor structure. Vertical transistor structures formed in
accordance with methodology of the present invention can be
incorporated into various types of integrated circuitry, including,
for example, DRAM arrays.
Inventors: |
Manning; H. Montgomery;
(Eagle, ID) ; Parekh; Kunal R.; (Boise, ID)
; Basceri; Cem; (Reston, VA) ; Sandhu; Gurtej
S.; (Boise, ID) |
Correspondence
Address: |
WELLS ST. JOHN P.S.
601 W. FIRST AVENUE, SUITE 1300
SPOKANE
WA
99201
US
|
Family ID: |
35943840 |
Appl. No.: |
10/928467 |
Filed: |
August 26, 2004 |
Current U.S.
Class: |
438/268 ;
257/E21.442; 257/E21.655; 257/E27.086; 438/242; 438/270; 438/272;
438/302; 438/525; 438/589 |
Current CPC
Class: |
H01L 27/10876 20130101;
H01L 27/10808 20130101; H01L 29/66787 20130101 |
Class at
Publication: |
438/268 ;
438/270; 438/272; 438/589; 438/525; 438/302; 438/242 |
International
Class: |
H01L 21/336 20060101
H01L021/336; H01L 21/3205 20060101 H01L021/3205; H01L 21/425
20060101 H01L021/425; H01L 21/8242 20060101 H01L021/8242 |
Claims
1. A method of forming a vertical transistor structure, comprising:
providing a construction having a vertically-extending pillar over
a semiconductor substrate, and having a gateline over the substrate
and adjacent the pillar, a top surface of the gateline being
elevationally below a top surface of the pillar; and implanting a
dopant at an angle that is at least 5.degree. from vertical to form
a source/drain implant region within the pillar that is aligned
relative to the top surface of the gateline.
2. The method of claim 1 wherein the angle of the implant is from
about 5.degree. to about 85.degree..
3. The method of claim 1 wherein the angle of the implant is from
about 10.degree. to about 60.degree..
4. The method of claim 1 wherein the angle of the implant is from
about 20.degree. to about 40.degree..
5. The method of claim 1 wherein the pillar has a lateral
periphery, and wherein the gateline entirely surrounds the lateral
periphery of the pillar.
6. The method of claim 1 wherein the pillar has a lateral
periphery, and wherein the gateline does not entirely surround the
lateral periphery of the pillar.
7. The method of claim 1 wherein the implanting of the dopant at
the angle also forms a source/drain region within the substrate
beneath the gateline.
8. The method of claim 1 wherein the source/drain implant region
within the pillar has a bottom-most periphery at an elevational
height above the substrate that is within 100 .ANG. of an
elevational height of the top surface of the gateline above the
substrate.
9. The method of claim 1 wherein the implant forms a halo region
within the pillar.
10. The method of claim 9 further comprising forming a
heavily-doped source/drain region within the pillar above the halo
region.
11. The method of claim 10 wherein the forming of the heavily-doped
source/drain region comprises forming a doped material over the
pillar and out-diffusing dopant from the doped material into the
pillar.
12. The method of claim 10 wherein the forming of the heavily-doped
source/drain region comprises implanting dopant into the pillar
above the halo region.
13. The method of claim 12 wherein the implanting of the dopant to
form the heavily-doped source/drain region occurs after the
formation of the halo region.
14. The method of claim 12 wherein the implanting of the dopant to
form the heavily-doped source/drain region occurs before the
formation of the halo region.
15. The method of claim 1 wherein the implant forms an L.sub.DD
region within the pillar.
16. The method of claim 15 further comprising implanting a
heavily-doped source/drain region within the pillar above the
L.sub.DD region.
17. The method of claim 15 wherein the forming of the heavily-doped
source/drain region comprises forming a doped material over the
pillar and out-diffusing dopant from the doped material into the
pillar.
18. The method of claim 15 wherein the forming of the heavily-doped
source/drain region comprises implanting dopant into the pillar
above the L.sub.DD region.
19. The method of claim 16 wherein implanting of the dopant to form
the heavily-doped source/drain region occurs after the formation of
the L.sub.DD region.
20. The method of claim 16 wherein implanting of the dopant to form
the heavily-doped source/drain region occurs before the formation
of the L.sub.DD region.
21. The method of claim 1 wherein the substrate comprises
monocrystalline silicon.
22. The method of claim 1 further comprising incorporating the
transistor structure into a DRAM device.
23. A method of forming a vertical transistor structure,
comprising: providing a construction having a vertically-extending
pillar over a monocrystalline substrate, and having a gateline over
the substrate and adjacent the pillar; and implanting a dopant at
an angle that is at least 5.degree. from vertical to form a
source/drain implant region beneath the gateline.
24. The method of claim 23 wherein the angle of the implant is from
about 5.degree. to about 85.degree..
25. The method of claim 23 wherein the angle of the implant is from
about 10.degree. to about 60.degree..
26. The method of claim 23 wherein the angle of the implant is from
about 20.degree. to about 40.degree..
27. The method of claim 23 wherein the pillar has a lateral
periphery, and wherein the gateline entirely surrounds the lateral
periphery of the pillar.
28. The method of claim 23 wherein the pillar has a lateral
periphery, and wherein the gateline does not entirely surround the
lateral periphery of the pillar.
29. The method of claim 23 wherein the implanting of the dopant at
the angle also forms a source/drain region within the pillar
adjacent a top surface of the gateline.
30. The method of claim 23 wherein the substrate comprises
monocrystalline silicon.
31. The method of claim 23 further comprising incorporating the
transistor structure into a DRAM device.
32. A method of forming a plurality of vertical transistor
structures, comprising: providing a construction having a plurality
of vertically-extending pillars over a semiconductor substrate, the
pillars having sidewall surfaces and having top surfaces at or
below a first elevational height; forming dielectric material along
the sidewall surfaces of the pillars; forming gateline material
over the substrate and adjacent the pillars, the gateline material
being spaced from the pillars by the dielectric material, the
gateline material having a top surface at or above the first
elevational height; recessing the gateline material so that the top
surface of the gateline material is below the first elevational
height; and implanting a dopant at an angle that is at least
5.degree. from vertical to form source/drain implant regions within
the pillars, the source/drain implant regions being aligned
relative to the top surface of the recessed gateline material.
33. The method of claim 32 wherein the angle of the implant is from
about 5.degree. to about 85.degree..
34. The method of claim 32 wherein the angle of the implant is from
about 10.degree. to about 60.degree..
35. The method of claim 32 wherein the angle of the implant is from
about 20.degree. to about 40.degree..
36. The method of claim 32 wherein the pillars have a lateral
peripheries, and wherein the gateline material entirely surrounds
the lateral peripheries of at least some of the pillars.
37. The method of claim 32 wherein the pillars have a lateral
peripheries, and wherein the gateline material does not entirely
surround the lateral peripheries of at least some of the
pillars.
38. The method of claim 32 wherein the implanting of the dopant at
the angle also forms one or more source/drain regions within the
substrate beneath the gateline.
39. The method of claim 32 wherein the implant forms halo regions
within the pillars.
40. The method of claim 39 further comprising implanting
heavily-doped source/drain regions within the pillars above the
halo regions.
41. The method of claim 40 wherein implanting of the heavily-doped
source/drain regions occurs after the formation of the halo
regions.
42. The method of claim 40 wherein implanting of the heavily-doped
source/drain regions occurs before the formation of the halo
regions.
43. The method of claim 32 wherein the implant forms L.sub.DD
regions within the pillars.
44. The method of claim 43 further comprising implanting
heavily-doped source/drain regions within the pillars above the
L.sub.DD regions.
45. The method of claim 44 wherein implanting of the heavily-doped
source/drain regions occurs after the formation of the L.sub.DD
regions.
46. The method of claim 44 wherein implanting of the heavily-doped
source/drain regions occurs before the formation of the L.sub.DD
regions.
47. The method of claim 32 wherein the substrate comprises
monocrystalline silicon.
48. The method of claim 32 further comprising incorporating the
transistor structures into DRAM devices.
Description
TECHNICAL FIELD
[0001] The invention pertains to methods of forming vertical
transistor structures.
BACKGROUND OF THE INVENTION
[0002] Transistor structures have numerous applications for
semiconductor circuitry. For instance, transistor structures can be
incorporated into memory (such as, for example, dynamic random
access memory (DRAM)) and logic circuitry. DRAM circuitry usually
includes an array of memory cells interconnected by rows and
columns, which are known as wordlines and bitlines, respectively. A
typical DRAM memory cell comprises a transistor structure connected
with a charge storage device (such as, for example, a
capacitor).
[0003] Transistor structures comprise a channel region between a
pair of source/drain regions, and a gate configured to electrically
connect the source/drain regions to one another through the channel
region. The transistor constructions utilized in semiconductor
constructions will be supported by a semiconductor substrate. The
semiconductor substrate will have a primary surface which can be
considered to define a horizontal direction. Transistor devices can
be divided amongst two broad categories based upon the orientations
of the channel regions relative to the primary surface of the
semiconductor substrate. Specifically, transistor structures which
have channel regions that are primarily parallel to the primary
surface of the substrate are referred to as planar transistor
structures, and those having channel regions which are generally
perpendicular to the primary surface of the substrate are referred
to as vertical transistor structures. Since current flow between
the source and drain regions of a transistor device occurs through
the channel region, planar transistor devices can be distinguished
from vertical transistor devices based upon the direction of
current flow as well as on the general orientation of the channel
region. Specifically, vertical transistor devices are devices in
which the current flow between the source and drain regions of the
devices is primarily substantially orthogonal to a primary surface
of a semiconductor substrate, and planar transistor devices are
devices in which the current flow between source and drain regions
is primarily parallel to the primary surface of the semiconductor
substrate.
[0004] There is continuing interest in the development of
methodologies by which vertical transistor devices can be
incorporated into integrated circuitry applications due to, among
other things, advantages in packing density that can be obtained
utilizing vertical transistor devices relative to planar transistor
devices. Difficulties are frequently encountered in attempting to
produce the vast arrays of vertical transistor devices desired for
semiconductor applications while maintaining suitable performance
characteristics of the devices. Accordingly, it is desired to
develop new methods for fabricating vertical transistor
devices.
SUMMARY OF THE INVENTION
[0005] The invention includes methodology which can be utilized to
self-align a source/drain implant with a gateline edge of a
vertical transistor structure.
[0006] In one aspect, the invention encompasses a method of forming
a vertical transistor structure. A construction is provided which
has a vertically-extending pillar over a semiconductor substrate.
The construction also has a gateline over the substrate and
adjacent the pillar, with the top surface of the gateline being
elevationally below a top surface of the pillar. A dopant is
implanted at an angle that is at least 5.degree. from vertical to
form a source/drain implant region within the pillar that is
aligned relative to the top surface of the gateline.
[0007] In one aspect, the invention includes a method of forming a
vertical transistor structure in which a dopant is implanted at an
angle that is at least 5.degree. from vertical to form a
source/drain implant region beneath a gateline of the
structure.
[0008] In one aspect, the invention encompasses a method of forming
a plurality of vertical transistor structures. A construction is
provided which has a plurality of vertically-extending pillars over
a monocrystalline substrate. The pillars have sidewall edges, and
also have top surfaces at or above a first elevational height. A
dielectric material is formed along the sidewall edges of the
pillars. Gateline material is formed over the substrate and
adjacent the pillars. The gateline material is spaced from the
pillars by the dielectric material. The gateline material has a top
surface at or above the first elevational height. The gateline
material is recessed so that the top surface of the gateline
material is below the first elevational height. A dopant is
implanted at an angle that is at least 5.degree. from vertical to
form source/drain implant regions within the pillars, with the
source/drain implant regions being aligned relative to the top
surface of the recessed gateline.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Preferred embodiments of the invention are described below
with reference to the following accompanying drawings.
[0010] FIG. 1 is a diagrammatic, cross-sectional fragmentary view
of a semiconductor construction at a preliminary processing stage
of an exemplary aspect of the present invention.
[0011] FIG. 2 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 1.
[0012] FIG. 3 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 2.
[0013] FIG. 4 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 3.
[0014] FIG. 5 is a top view of an exemplary semiconductor structure
along the line 5-5 of FIG. 4, and comprising the cross-section of
FIG. 4 along the line 4-4.
[0015] FIG. 6 is a top view of another exemplary semiconductor
structure comprising the cross-section of FIG. 4 along the line
4-4, with the structure of FIG. 6 being an alternative embodiment
relative to that of FIG. 5.
[0016] FIG. 7 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 4.
[0017] FIG. 8 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 4 in accordance with an
exemplary aspect of the invention alternative to that of FIG.
7.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0018] This disclosure of the invention is submitted in furtherance
of the constitutional purposes of the U.S. Patent Laws "to promote
the progress of science and useful arts" (Article 1, Section
8).
[0019] A challenge confronted in the design of vertical transistor
structures involves the difficulty of aligning source/drain regions
of the structures with gate edges. Vertical transistor devices will
frequently comprise a pillar of semiconductive material having an
upper portion where a source/drain is to be formed, and having a
middle portion where a channel region is to be formed. The
transistor devices will also comprise a gateline adjacent the
pillar and having an uppermost edge which is to be aligned relative
to the interface of the channel region and upper source/drain
region within the pillar. The amount of overlap between the
gateline and the source/drain region can significantly influence
performance characteristics of a transistor device. If there is too
much overlap between the source/drain and the gateline, capacitive
effects between the source/drain and gateline will become
problematic and/or gate-induced drain leakage will become
problematic. If there is too little overlap, there will not be an
adequate connection to the source/drain region of the transistor
device and reliability will be degraded.
[0020] The problems of aligning source/drain region implants within
vertical pillars of vertical transistor structures can be
exacerbated by physical variations that can exist amongst a
population of pillars associated with a semiconductor substrate.
For instance, there will typically be a variation in height amongst
the pillars, and further there will be a variation in height of the
gateline material extending along the pillars. Accordingly, if
source/drain regions are all provided to be the same depth amongst
the pillars, there will likely be some source/drain regions which
are too deep and others which are too shallow within the population
of transistor structures that is being formed.
[0021] In some aspects, the present invention addresses the
above-discussed challenge of forming source/drain regions for
vertical transistor structures by providing methodology which can
self-align the source/drain regions to the top edge of a gateline
of a vertical transistor device.
[0022] Exemplary aspects of the invention are described with
reference to FIGS. 1-8.
[0023] Referring initially to FIG. 1, a semiconductor construction
10 comprises a substrate 12 having a primary surface 13 which
defines a horizontal direction. Substrate 12 can comprise, consist
essentially of, or consist of a monocrystalline semiconductor
material, and in particular aspects will comprise, consist
essentially of, or consist of monocrystalline silicon lightly-doped
with appropriate background-type dopant. Substrate 12, can, for
example, be a portion of a monocrystalline silicon wafer. To aid in
interpretation of the claims that follow, the terms "semiconductive
substrate" and "semiconductor substrate" are defined to mean any
construction comprising semiconductive material, including, but not
limited to, bulk semiconductive materials such as a semiconductive
wafer (either alone or in assemblies comprising other materials
thereon), and semiconductive material layers (either alone or in
assemblies comprising other materials). The term "substrate" refers
to any supporting structure, including, but not limited to, the
semiconductive substrates described above.
[0024] A pair of vertically-extending pillars 14 and 16 are over
the monocrystalline substrate 12, and supported by the substrate.
Pillars 14 and 16 comprise semiconductor material 18. Such
semiconductor material can be monocrystalline material epitaxially
grown from a surface of substrate 12, polycrystalline material
and/or amorphous material. In particular aspects, material 18 will
comprise, consist essentially of, or consist of silicon.
[0025] The pillars 14 and 16 comprise sidewall and top surfaces,
with the sidewall and top surface of pillar 14 being labeled 15 and
17, respectively; and the sidewall and top surface of pillar 16
being labeled 19 and 21, respectively.
[0026] A dielectric material 20 extends over substrate 12 and over
pillars 14 and 16. Dielectric material 20 is ultimately utilized
for spacing a gateline (discussed below) from the pillars, and can
comprise any suitable material formed to any suitable thickness. In
particular aspects, dielectric material 20 will comprise, consist
essentially of, or consist of silicon dioxide formed to a thickness
of less than or equal to about 50 .ANG.. Dielectric material 20 can
be formed by atomic layer deposition or chemical vapor deposition
of an appropriate material, and/or can be formed by thermal
oxidation of exposed surfaces of substrate 12 and pillar material
18.
[0027] Source/drain regions 22 are provided within substrate 12
proximate the bottom of pillar 14, and source/drain regions 24 are
provided within substrate 12 proximate the bottom of pillar 16.
Source/drain regions 22 and 24 can comprise any suitable
composition, and typically will be heavily-doped with either n-type
dopant or p-type dopant. The source/drain regions 22 and 24 can be
identical in composition to one another, or can be different from
one another. Also, although the pillars 14 and 16 are shown
comprising the same material 18 as one another, it is to be
understood that the pillars can, in other aspects (not shown)
comprise different materials from one another.
[0028] Although it appears that two source/drain regions are formed
adjacent each of the pillars in the shown cross-sectional view, it
is to be understood that the source/drain regions may extend around
the pillars when viewed from above. Accordingly, the apparent pair
of source/drain regions 22 can be a single source/drain region
extending entirely around pillar 14, and similarly the apparent
pair of source/drain regions 24 can be a single source/drain region
extending entirely around the pillar 16.
[0029] An isolation region 26 is shown provided between pillars 14
and 16. The isolation region is utilized to electrically isolate
source/drain regions 22 from source/drain regions 24. Isolation
region 26 can comprise any structure, such as, for example, a
shallow trench isolation region. Although only one isolation region
is shown, it is to be understood that other isolation regions can
also be provided.
[0030] Although source/drain regions 22 and 24 are shown at the
processing stage of FIG. 1, it is to be understood that the
source/drain regions can be provided at other processing stages.
Typically, the source/drain regions 22 and 24 will be provided
after formation of pillars 14 and 16 so that the source/drain
regions can be self-aligned relative to the pillars.
[0031] Pillars 14 and 16 would typically be part of a large array
comprising a plurality of pillars. As discussed above, one of the
problems in forming an array of pillars is that the pillars will
typically not have identical heights across the array. Accordingly,
even though pillars 14 and 16 are shown with approximately the same
height as one another, it is to be understood that there can be
other pillars present within an array comprising pillars 14 and 16
which have a different height than the pillars 14 and 16. For
purposes of explaining the invention herein, it is useful to define
a first elevational height as a height which is at or above the top
surfaces 17 and 21 of the pillars. Such first elevational height is
illustrated by the dashed line 28 in FIG. 1.
[0032] Referring next to FIG. 2, a gateline material 30 is formed
over substrate 12 and over the pillars 14 and 16. The gateline
material has an upper (or top) surface 31 which is at or above the
first elevational height 28. The gateline material can be
considered to be formed adjacent the pillars. The gateline material
is formed in an orientation such that the gateline material can
ultimately be constructed into gatelines controlling current flow
through channels contained within the pillars, as will become
apparent from the discussion below.
[0033] The gateline material 30 can comprise any suitable
composition, and typically will comprise, consist essentially of,
or consist of conductively-doped semiconductor material, such as,
for example, silicon. In particular aspects, gateline 30 can
comprise, consist essentially of, or consist of conductively-doped
polycrystalline silicon and/or amorphous silicon. Gateline material
30 can also, or alternatively, comprise various metals and/or metal
compositions. Although gateline material 30 is shown homogeneous in
composition, it is to be understood that the gateline material can,
in some aspects (not shown), comprise two or more separate layers
which differ in composition relative to one another.
[0034] Referring to FIG. 3, gateline material 30 is patterned into
a gateline structures 34 and 36 adjacent pillars 14 and 16,
respectively. The patterning of the gateline material can be
accomplished by, for example, photolithographic processing to form
a suitable photoresist mask (not shown) over the gateline material
30, followed by an etch to transfer a pattern from the mask to the
gateline material, and subsequent removal of the photoresist mask.
Although the cross-sectional view of FIG. 3 shows what appear to be
two gatelines 34 proximate pillar 14 and two gatelines 36 proximate
pillar 16, it is to be understood that the shown gatelines 34 can
surround pillar 14 and accordingly merge into one another to be
part of a single gateline, and similarly the shown gatelines 36 can
surround pillar 16 and accordingly merge with one another as part
of a single gateline. Such is described in more detail below with
reference to FIGS. 5 and 6.
[0035] The gateline material 30 has been recessed relative to
pillars 14 and 16 so that upper surface 31 of the gateline material
is now below the first elevational height 28.
[0036] Referring next to FIG. 4, dopant 40 is implanted into
construction 10 at an angle to form source/drain implant regions 42
and 44 within the pillars 14 and 16, respectively. A vertical axis
45 is provided within FIG. 4, with the vertical direction of such
axis being defined to be orthogonal to the horizontal axis defined
by primary surface 13 of substrate 12. The angle at which dopant 40
is implanted into construction 10 is preferably at least 5.degree.
from vertical and in particular applications can be from about
5.degree. to about 85.degree. from vertical, from about 10.degree.
to about 60.degree. from vertical, from about 20.degree. to about
40.degree. from vertical, and typically will be about 30.degree.
from vertical.
[0037] The angled implant effectively uses top surface 31 of
gateline material 30 as a mask, and thus aligns bottom-most regions
of source/drain regions 42 and 44 with the upper surface 31 of
gateline material 30. Specifically, source/drain regions 42 and 44
have bottom-most locations 41 and 43, respectively, corresponding
to the lowest level that dopant from the angled implant penetrates
into pillar material 18 from the energy of the implant alone (it is
noted that the dopant might migrate to regions below the shown
bottom-most regions through thermal processing occurring subsequent
to the implant of the dopant into the material 18).
[0038] The bottom-most level 41 of source/drain region 42 is
preferably below upper surface 31 of gateline 34, but within 100
.ANG. of the elevational height of the top surface 31 of gateline
34. Similarly, the bottom-most level 43 of source/drain region 44
is preferably below upper surface 31 of gateline 36, but within 100
.ANG. of such upper surface of gateline 36. The angled implant of
dopant 40 can be considered to form source/drain regions which are
self-aligned relative to the upper surfaces of gatelines adjacent
the source/drain regions.
[0039] The source/drain regions 42 and 44 can correspond to any
type of source/drain region which is desired to be formed within
the vertical pillars. In particular aspects, the source/drain
region will correspond to lightly doped diffusion (L.sub.DD)
regions, and/or to halo regions. As is understood by persons of
ordinary skill in the art, a transistor device will typically
comprise heavily-doped portions of source/drain regions (typically
understood as portions doped to a concentration of at least about
10.sup.19 atoms/cm.sup.3 with conductivity-enhancing dopant) and
more lightly doped portions of the regions. The heavily-doped
regions can be either p-type or n-type, and the lightly doped
regions will be referred to as halo regions if they have an
opposite conductivity type relative to the heavily-doped regions,
whereas the lightly doped regions will be referred to as L.sub.DD
regions if they have the same conductivity type as the heavily
doped regions.
[0040] In the aspect of the invention shown in FIG. 4, the angled
implant of dopant 40 forms doped regions 50 and 52 within substrate
12 and beneath gatelines 34 and 36. Regions 50 and 52 can be
referred to as source/drain implant regions formed within the
semiconductor material of substrate 12. Regions 50 and 52 will be
formed by the angled implant of dopant 40 if the spacing between
adjacent gatelines 14 and 16 is large enough relative to the
steepness of the implant of dopant 40 to allow the dopant to reach
the substrate beyond the shadow of the upwardly-extending features.
It is to be understood that the invention encompasses aspects in
which dopant 40 is implanted too shallow relative to the spacing
between the adjacent pillars 14 and 16 for the implant to reach
substrate 12, in addition to the shown aspect in which the angled
implant forms the source/drain implant regions within the substrate
12. Also, it is noted that even if full shadowing occurs, the
angled implant can, in some aspects, dope the lower source/drain
regions if it is done in four orientations of the wafer (for
example, 0.degree., 90.degree., 180.degree. and 270.degree.).
[0041] As discussed previously, gatelines 34 and 36 may or may not
entirely surround pillars 14 and 16. FIGS. 5 and 6 illustrate top
views along the section 5-5 of FIG. 4 to show a pair of exemplary
orientations of the gatelines relative to the pillars. Views of
FIGS. 5 and 6 show the pillars 42 and 44 contained within an array
which also comprises another pair of pillars 60 and 62. Each of the
pillars comprises a lateral periphery. FIG. 5 illustrates a
construction in which gateline 34 entirely surrounds the lateral
periphery of pillar 42, and gateline 36 entirely surrounds the
lateral periphery of pillar 44; and FIG. 6 illustrates a
construction in which gateline 34 does not entirely surround the
lateral periphery of pillar 42, and also in which gateline 36 does
not entirely surround the lateral periphery of pillar 44.
[0042] Although the gatelines 34 and 36 are shown to be identical
relative to one another, it is to be understood that the invention
encompasses aspects in which the gatelines are different from one
another. For instance, some of the pillars may be entirely
laterally surrounded by gateline material while others of the
pillars are not entirely laterally surrounded by gateline
material.
[0043] The views of FIGS. 5 and 6 illustrate exemplary aspects by
which gateline material can be provided adjacent pillars. It is to
be understood that numerous other aspects can be utilized in
conjunction with the methodologies of the present invention
described herein.
[0044] Referring next to FIG. 7, construction 10 is illustrated at
a processing stage subsequent to that of FIG. 4, and specifically
is illustrated after heavily-doped source/drain regions 70 and 72
have been formed at the tops of pillars 14 and 16, respectively.
The heavily-doped source/drain regions can be formed by any
suitable methodology, including, for example, a vertical implant
(i.e., an implant at approximately 0.degree. relative to the
vertical axis 45 of FIG. 4).
[0045] Although the heavily-doped source/drain regions are shown
being formed after the FIG. 4 implant to form regions 42 and 44, it
is to be understood that the heavily-doped regions can also be
formed before and/or during the implant utilized to form regions 42
and 44. Also, although channel doping within pillars 14 and 16 was
not discussed above, it is to be understood that there will
typically be some channel doping of the pillars which would occur
to, for example, form a threshold voltage (V.sub.t) implant within
the pillars. Such channel doping can occur at any suitable
processing stage, including, for example, a processing stage prior
to FIG. 2.
[0046] The doped regions 70 and 42 are electrically connected to
the doped regions 22 and 50 through a vertical channel region
within pillar 14 that is controlled by gateline 34. Accordingly,
pillar 14 is comprised by a vertical transistor structure.
Similarly, pillar 16 is comprised by a vertical transistor
structure comprising a vertical channel between the source/drain
regions at the top pillar 16 and the source/drain regions beneath
gateline 36, with electrical current flow within such channel being
controlled by gateline 36. The vertical transistor structures can
be incorporated into numerous types of integrated circuitry. In an
exemplary aspect, the vertical transistor structures are
incorporated into DRAM devices. Specifically, source/drain regions
70 and 72 are electrically connected to charge storage structures
(such as, for example, capacitors) 76 and 78, and source/drain
regions 22 and 24 are electrically connected to bitlines 80 and 82,
respectively. The dielectric material 20 is shown removed from over
the top surfaces 17 and 21 of the pillars to accommodate electrical
connection to the top of the pillars. Such removal can be
accomplished by a suitable etch and/or planarization (such as, for
example, chemical-mechanical polishing).
[0047] FIG. 8 illustrates another aspect of the invention which can
follow the processing stage of FIG. 4. In referring to FIG. 8,
similar numbering will be used as was utilized above in describing
FIG. 7, where appropriate. The structure of FIG. 8 is similar to
that of FIG. 7, except that FIG. 8 comprises conductive pillars 90
and 92 formed over the uppermost surfaces 17 and 21 of pillars 14
and 16, respectively. The pillars 90 and 92 are formed after
removal of dielectric material 20 from over the uppermost surfaces
17 and 21 of pillars 14 and 16, and accordingly are in direct
physical contact with (i.e., touch) the uppermost surfaces of the
pillars 14 and 16. Conductive pillars 90 and 92 can comprise any
suitable electrically conductive composition or combination of
compositions. In particular aspects, the pillars 90 and 92 will
comprise, consist essentially of, or consist of conductively-doped
semiconductor material (such as, for example, conductively-doped
silicon). In such aspects, heavily-doped source/drain regions 70
and 72 can be formed by out-diffusion of dopant from the conductive
pillars 90 and 92.
[0048] The pillars 90 and 92 are shown electrically connected to
the charge storage devices 76 and 78 discussed above, and
accordingly are shown incorporated into DRAM devices in the
exemplary construction of FIG. 8.
[0049] In compliance with the statute, the invention has been
described in language more or less specific as to structural and
methodical features. It is to be understood, however, that the
invention is not limited to the specific features shown and
described, since the means herein disclosed comprise preferred
forms of putting the invention into effect. The invention is,
therefore, claimed in any of its forms or modifications within the
proper scope of the appended claims appropriately interpreted in
accordance with the doctrine of equivalents.
* * * * *