U.S. patent application number 11/013429 was filed with the patent office on 2006-03-02 for semiconductor storage device.
Invention is credited to Osamu Hirabayashi.
Application Number | 20060044865 11/013429 |
Document ID | / |
Family ID | 35767985 |
Filed Date | 2006-03-02 |
United States Patent
Application |
20060044865 |
Kind Code |
A1 |
Hirabayashi; Osamu |
March 2, 2006 |
SEMICONDUCTOR STORAGE DEVICE
Abstract
A semiconductor storage device includes first and second
additional FETs disposed in parallel on one of potential lines for
supplying first and second drive potentials to each SRAM memory
cell. When each memory cell is selected, a selection signal is
supplied to the gate terminal of the first additional FET through a
selection signal supply line to turn on the first additional FET. A
bias generation circuit is configured to generate a bias potential
and supply it to the gate terminal of the second additional FET.
The bias potential is generated to reflect one or both of
fluctuations in the potential difference between the first and
second drive potentials, and variations in the threshold voltage of
FETs included in the cross-feedback circuit of each memory
cell.
Inventors: |
Hirabayashi; Osamu; (Tokyo,
JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Family ID: |
35767985 |
Appl. No.: |
11/013429 |
Filed: |
December 17, 2004 |
Current U.S.
Class: |
365/154 |
Current CPC
Class: |
G11C 5/148 20130101;
G11C 11/417 20130101 |
Class at
Publication: |
365/154 |
International
Class: |
G11C 11/00 20060101
G11C011/00 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 31, 2004 |
JP |
2004-253221 |
Claims
1. A semiconductor storage device comprising: a memory cell array
including a plurality of SRAM memory cells (SRAM: Static Random
Access Memory) arrayed therein; a plurality of word lines
configured to select the memory cells; a plurality of complementary
pairs of data lines configured to transmit data into and from the
memory cells; a first potential line configured to supply a first
drive potential to each of the memory cells; a second potential
line configured to supply a second drive potential lower than the
first drive potential to each of the memory cells; a first
additional FET (FET: Field-Effect Transistor) disposed on one
potential line of the first and second potential lines, to
selectively bring the one potential line into conduction; a
selection signal supply line configured to supply a selection
signal to a gate terminal of the first additional FET, so as to set
the first additional FET in an ON-state, when each of the memory
cells is selected; a second additional FET disposed on the one
potential line, in parallel with the first additional FET, to
selectively bring the one potential line into conduction; and a
bias generation circuit configured to generate a bias potential and
supply the bias potential to a gate terminal of the second
additional FET, wherein the bias potential is generated to reflect
one or both of fluctuations in a potential difference between the
first and second drive potentials, and variations in threshold
voltage of FETs included in a cross-feedback circuit of each of the
memory cells.
2. The device according to claim 1, wherein the bias potential is a
potential different from the first and second drive potentials, and
the second additional FET is turned on, with reference to the bias
potential, by a voltage drop generated in a corresponding memory
cell when the first additional FET is set in an OFF-state.
3. The device according to claim 2, wherein the bias potential is
arranged such that the second additional FET is turned on before
the voltage drop proceeds to a degree at which data stored in the
corresponding memory cell is destroyed.
4. The device according to claim 3, wherein the bias potential is
arranged such that, before any one of the FETs included in the
cross-feedback circuit of each of the memory cells is turned off
due to the voltage drop, the second additional FET is turned on to
stop the voltage drop.
5. The device according to claim 1, wherein the one potential line
is the second potential line, and the first and second additional
FETs are an NMOSFET (MOS: Metal-Oxide-Semiconductor) and a PMOSFET,
respectively.
6. The device according to claim 1, wherein the bias generation
circuit comprises a path supplied with the first and second drive
potentials respectively at opposite ends, and configured to output
the bias potential from a predetermined node on the path.
7. The device according to claim 6, wherein the bias generation
circuit comprises a first replica FET prepared to have the same
specifications and the same threshold voltage as one of the FETs
included in the cross-feedback circuit of each of the memory cells,
and the first replica FET is disposed on the path in a
diode-connection state to have a gate terminal and a drain terminal
connected to each other.
8. The device according to claim 7, wherein the bias generation
circuit comprises a second replica FET prepared to have the same
specifications and the same threshold voltage as the second
additional FET, and the second replica FET is disposed on the path
in series with the first replica FET and in a diode-connection
state to have a gate terminal and a drain terminal connected to
each other.
9. The device according to claim 7, wherein the bias generation
circuit further comprises a third replica FET being of the same
conductivity type as the first replica FET and prepared to have the
same specifications and the same threshold voltage as one of the
FETs included in the cross-feedback circuit, and the third replica
FET is disposed on the path in series with the first replica FET
and in a diode-connection state to have a gate terminal and a drain
terminal connected to each other.
10. The device according to claim 6, wherein the bias generation
circuit further comprises a current mirror circuit connected in
parallel with the path and configured to supply a constant
current.
11. A semiconductor storage device comprising: a memory cell array
including a plurality of memory cells arrayed therein, each of the
memory cells having first to fourth NMISFETs (MIS:
Metal-Insulator-Semiconductor) and first and second PMISFETs, such
that a drain terminal of the first NMISFET is connected to a drain
terminal of the first PMISFET, a drain terminal of the second
NMISFET is connected to a drain terminal of the second PMISFET,
gate terminals of the first NMISFET and the first PMISFET are
connected to the drain terminals of the second NMISFET and the
second PMISFET and a source terminal of the third NMISFET, and gate
terminals of the second NMISFET and the second PMISFET are
connected to the drain terminals of the first NMISFET and the first
PMISFET and a source terminal of the fourth NMISFET; a plurality of
word lines configured to select the memory cells, each of the word
lines being connected to gate terminals of the third NMISFET and
the fourth NMISFET; a plurality of complementary pairs of data
lines configured to transmit data into and from the memory cells,
the data lines of each of the complementary pairs being connected
to drain terminals of the third NMISFET and the fourth NMISFET,
respectively; a first potential line connecting source terminals of
the first PMISFET and the second PMISFET to a supply source of a
first drive potential; a second potential line connecting source
terminals of the first NMISFET and the second NMISFET to a supply
source of a second drive potential lower than the first drive
potential; a fifth NMISFET disposed on the second potential line to
selectively bring the second potential line into conduction; a
selection signal supply line configured to supply a selection
signal to a gate terminal of the fifth NMISFET, so as to set the
fifth NMISFET in an ON-state, when each of the memory cells is
selected; a third PMISFET disposed on the second potential line, in
parallel with the fifth NMISFET, to selectively bring the second
potential line into conduction; and a first bias generation circuit
configured to generate a first bias potential and supply the first
bias potential to a gate terminal of the third PMISFET, the first
bias generation circuit comprising a first path supplied with the
first and second drive potentials respectively at opposite ends,
and configured to output the first bias potential from a first node
on the first path.
12. The device according to claim 11, wherein the first bias
potential is a potential different from the first and second drive
potentials, and the third PMISFET is turned on, with reference to
the first bias potential, by a voltage drop generated in a
corresponding memory cell when the fifth NMISFET is set in an
OFF-state, and wherein the first potential is arranged such that,
before any one of the first and second PMISFETs and the first and
second NMISFETs is turned off due to the voltage drop, the third
PMISFET is turned on to stop the voltage drop.
13. The device according to claim 11, wherein the first bias
generation circuit comprises a first replica PMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second PMISFETs, and the first replica PMISFET is
disposed on the first path between one of the opposite ends
supplied with the first drive potential and the first node and in a
diode-connection state to have a gate terminal and a drain terminal
connected to each other.
14. The device according to claim 13, wherein the first bias
generation circuit comprises a second replica PMISFET prepared to
have the same specifications and the same threshold voltage as the
third PMISFET, and the second replica PMISFET is disposed on the
first path in series with the first replica PMISFET, between one of
the opposite ends supplied with the first drive potential and the
first node, and in a diode-connection state to have a gate terminal
and a drain terminal connected to each other.
15. The device according to claim 13, wherein the first bias
generation circuit comprises a third replica PMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second PMISFETs, and the third replica PMISFET is
disposed on the first path in series with the first replica
PMISFET, between one of the opposite ends supplied with the first
drive potential and the first node, and in a diode-connection state
to have a gate terminal and a drain terminal connected to each
other.
16. The device according to claim 13, further comprising: a fourth
PMISFET disposed on the second potential line, in parallel with the
fifth NMISFET and the third PMISFET, to selectively bring the
second potential line into conduction; and a second bias generation
circuit configured to generate a second bias potential and supply
the second bias potential to a gate terminal of the fourth PMISFET,
the second bias generation circuit comprising a second path
supplied with the first and second drive potentials respectively at
opposite ends, and configured to output the second bias potential
from a second node on the second path, wherein the second bias
generation circuit comprises a first replica NMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second NMISFETs, and the first replica NMISFET is
disposed on the second path between one of the opposite ends
supplied with the first drive potential and the second node and in
a diode-connection state to have a gate terminal and a drain
terminal connected to each other.
17. The device according to claim 11, wherein the first bias
generation circuit comprises a first replica NMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second NMISFETs, and the first replica NMISFET is
disposed on the first path between one of the opposite ends
supplied with the first drive potential and the first node and in a
diode-connection state to have a gate terminal and a drain terminal
connected to each other.
18. The device according to claim 17, wherein the first bias
generation circuit comprises a second replica PMISFET prepared to
have the same specifications and the same threshold voltage as the
third PMISFET, and the second replica PMISFET is disposed on the
first path in series with the first replica NMISFET, between one of
the opposite ends supplied with the first drive potential and the
first node, and in a diode-connection state to have a gate terminal
and a drain terminal connected to each other.
19. The device according to claim 17, wherein the first bias
generation circuit comprises a third replica NMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second NMISFETs, and the third replica NMISFET is
disposed on the first path in series with the first replica
NMISFET, between one of the opposite ends supplied with the first
drive potential and the first node, and in a diode-connection state
to have a gate terminal and a drain terminal connected to each
other.
20. The device according to claim 11, wherein the first bias
generation circuit further comprises a current mirror circuit
connected in parallel with the first path and configured to supply
a constant current.
21. A semiconductor storage device comprising: a memory cell array
including a plurality of memory cells arrayed therein, each of the
memory cells having first to fourth NMISFETs and first and second
PMISFETs, such that a drain terminal of the first NMISFET is
connected to a drain terminal of the first PMISFET, a drain
terminal of the second NMISFET is connected to a drain terminal of
the second PMISFET, gate terminals of the first NMISFET and the
first PMISFET are connected to the drain terminals of the second
NMISFET and the second PMISFET and a source terminal of the third
NMISFET, and gate terminals of the second NMISFET and the second
PMISFET are connected to the drain terminals of the first NMISFET
and the first PMISFET and a source terminal of the fourth NMISFET;
a plurality of word lines configured to select the memory cells,
each of the word lines being connected to gate terminals of the
third NMISFET and the fourth NMISFET; a plurality of complementary
pairs of data lines configured to transmit data into and from the
memory cells, the data lines of each of the complementary pairs
being connected to drain terminals of the third NMISFET and the
fourth NMISFET, respectively; a first potential line connecting
source terminals of the first PMISFET and the second PMISFET to a
supply source of a first drive potential; a second potential line
connecting source terminals of the first NMISFET and the second
NMISFET to a supply source of a second drive potential lower than
the first drive potential; a third PMISFET disposed on the first
potential line to selectively bring the first potential line into
conduction; a selection signal supply line configured to supply a
selection signal to a gate terminal of the third PMISFET, so as to
set the third PMISFET in an ON-state, when each of the memory cells
is selected; a fifth NMISFET disposed on the first potential line,
in parallel with the third PMISFET, to selectively bring the first
potential line into conduction; and a first bias generation circuit
configured to generate a first bias potential and supply the first
bias potential to a gate terminal of the fifth NMISFET, the first
bias generation circuit comprising a first path supplied with the
first and second drive potentials respectively at opposite ends,
and configured to output the first bias potential from a first node
on the first path.
22. The device according to claim 21, wherein the first bias
potential is a potential different from the first and second drive
potentials, and the fifth NMISFET is turned on, with reference to
the first bias potential, by a voltage drop generated in a
corresponding memory cell when the third PMISFET is set in an
OFF-state, and wherein the first potential is arranged such that,
before any one of the first and second PMISFETs and the first and
second NMISFETs is turned off due to the voltage drop, the fifth
NMISFET is turned on to stop the voltage drop.
23. The device according to claim 21, wherein the first bias
generation circuit comprises a first replica NMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second NMISFETs, and the first replica NMISFET is
disposed on the first path between one of the opposite ends
supplied with the second drive potential and the first node and in
a diode-connection state to have a gate terminal and a drain
terminal connected to each other.
24. The device according to claim 21, wherein the first bias
generation circuit comprises a first replica PMISFET prepared to
have the same specifications and the same threshold voltage as one
of the first and second PMISFETs, and the first replica PMISFET is
disposed on the first path between one of the opposite ends
supplied with the second drive potential and the first node and in
a diode-connection state to have a gate terminal and a drain
terminal connected to each other.
Description
CROSS-REFERENCE. TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2004-253221, Aug. 31, 2004, the entire contents of which are
incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a semiconductor storage
device, and particularly to a technique for reducing standby
current in a static semiconductor storage device, e.g., an SRAM
(SRAM: Static Random Access Memory).
[0004] 2. Description of the Related Art
[0005] SRAMs (typically, each memory cell includes six transistors
to store one bit) are widely used for LSIs (LSI: Large Scale
Integrated circuit). A problem has become prominent in that leakage
current increases in memory cells on standby, as a consequence of
the reduced size and operation voltage of LSIs. The term "standby"
means that a memory cell is in the non-selected state.
[0006] The thickness of the gate oxide film of MOSFETs (MOSFET:
Metal-Oxide-Semiconductor Field-Effect Transistor) used in SRAMs
decreases, as LSIs are more miniaturized and more highly
integrated. As a consequence, leakage current tunneling through the
gate oxide film (gate leakage) increases and thereby brings about
an increase in the entire leakage current on standby. In addition,
the threshold voltage of MOSFETs decreases with decrease in the
operation voltage of LSIs, which brings about an increase in the
leakage current in the OFF-state (sub-threshold leakage).
[0007] As a countermeasure for reducing standby leakage in SRAMs,
there is a method of controlling the electric potential of a cell
array on standby to relax an electric field applied to MOSFETs, in
view of circuitry (for example, Masanao Yamada et al., "A 300 MHz
25 .mu.A/Mb Leakage On-Chip SRAM Module . . . ", C 2004/SESSION
27/SRAM/27.2, pp. 494-495).
BRIEF SUMMARY OF THE INVENTION
[0008] According to a first aspect of the present invention, there
is provided a semiconductor storage device comprising: a memory
cell array including a plurality of SRAM memory cells (SRAM: Static
Random Access Memory) arrayed therein; a plurality of word lines
configured to select the memory cells; a plurality of complementary
pairs of data lines configured to transmit data into and from the
memory cells; a first potential line configured to supply a first
drive potential to each of the memory cells; a second potential
line configured to supply a second drive potential lower than the
first drive potential to each of the memory cells; a first
additional FET (FET: Field-Effect Transistor) disposed on one
potential line of the first and second potential lines, to
selectively bring the one potential line into conduction; a
selection signal supply line configured to supply a selection
signal to a gate terminal of the first additional FET, so as to set
the first additional FET in an ON-state, when each of the memory
cells is selected; a second additional FET disposed on the one
potential line, in parallel with the first additional FET, to
selectively bring the one potential line into conduction; and a
bias generation circuit configured to generate a bias potential and
supply the bias potential to a gate terminal of the second
additional FET, wherein the bias potential is generated to reflect
one or both of fluctuations in a potential difference between the
first and second drive potentials, and variations in threshold
voltage of FETs included in a cross-feedback circuit of each of the
memory cells.
[0009] According to a second aspect of the present invention, there
is provided a semiconductor storage device comprising: a memory
cell array including a plurality of memory cells arrayed therein,
each of the memory cells having first to fourth NMISFETs (MIS:
Metal-Insulator-Semiconductor) and first and second PMISFETs, such
that a drain terminal of the first NMISFET is connected to a drain
terminal of the first PMISFET, a drain terminal of the second
NMISFET is connected to a drain terminal of the second PMISFET,
gate terminals of the first NMISFET and the first PMISFET are
connected to the drain terminals of the second NMISFET and the
second PMISFET and a source terminal of the third NMISFET, and gate
terminals of the second NMISFET and the second PMISFET are
connected to the drain terminals of the first NMISFET and the first
PMISFET and a source terminal of the fourth NMISFET; a plurality of
word lines configured to select the memory cells, each of the word
lines being connected to gate terminals of the third NMISFET and
the fourth NMISFET; a plurality of complementary pairs of data
lines configured to transmit data into and from the memory cells,
the data lines of each of the complementary pairs being connected
to drain terminals of the third NMISFET and the fourth NMISFET,
respectively; a first potential line connecting source terminals of
the first PMISFET and the second PMISFET to a supply source of a
first drive potential; a second potential line connecting source
terminals of the first NMISFET and the second NMISFET to a supply
source of a second drive potential lower than the first drive
potential; a fifth NMISFET disposed on the second potential line to
selectively bring the second potential line into conduction; a
selection signal supply line configured to supply a selection
signal to a gate terminal of the fifth NMISFET, so as to set the
fifth NMISFET in an ON-state, when each of the memory cells is
selected; a third PMISFET disposed on the second potential line, in
parallel with the fifth NMISFET, to selectively bring the second
potential line into conduction; and a first bias generation circuit
configured to generate a first bias potential and supply the first
bias potential to a gate terminal of the third PMISFET, the first
bias generation circuit comprising a first path supplied with the
first and second drive potentials respectively at opposite ends,
and configured to output the first bias potential from a first node
on the first path.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0010] FIG. 1 is a view showing a conventional countermeasure in
view of circuitry for reducing standby leakage in an SRAM;
[0011] FIG. 2 is a view showing the potential relationship within a
memory cell on standby in the device shown in FIG. 1;
[0012] FIG. 3 is a block diagram showing an SRAM (semiconductor
storage device) according to a first embodiment of the present
invention;
[0013] FIG. 4 is an enlarged view showing one memory cell in the
memory cell array shown in FIG. 3;
[0014] FIG. 5 is a view showing the SRAM (semiconductor storage
device) according to the first embodiment, focusing on circuitry
for clamping the standby voltage thereof;
[0015] FIG. 6 is a view showing the potential relationship within a
memory cell on standby in the device shown in FIG. 5;
[0016] FIG. 7 is a view showing an SRAM (semiconductor storage
device) according to a second embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof;
[0017] FIG. 8 is a view showing an SRAM (semiconductor storage
device) according to a third embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof;
[0018] FIG. 9 is a view showing an SRAM (semiconductor storage
device) according to a fourth embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof;
and
[0019] FIG. 10 is a view showing the potential relationship within
a memory cell on standby in the device shown in FIG. 9.
DETAILED DESCRIPTION OF THE INVENTION
[0020] In the process of developing the present invention, the
inventors studied conventional countermeasures in view of circuitry
for reducing standby leakage in SRAMs. As a result, the inventors
have arrived at the findings given below.
[0021] FIG. 1 is a view showing a conventional countermeasure in
view of circuitry for reducing standby leakage in an SRAM. The SRAM
includes a memory cell array MCA, in which a plurality of memory
cells are arrayed in a matrix format. However, FIG. 1 shows only
one memory cell in an enlarged view, for the sake of
convenience.
[0022] As shown in FIG. 1, each memory cell includes six
transistors, i.e., two driver transistors DV1 and DV2, two load
transistors LD1 and LD2, and two transfer gate transistors XF1 and
XF2. The transistors DV1, DV2, XF1, and XF2 are formed of N-
(N-channel type) MOSFETs, while the transistors LD1 and LD2 are
formed of P- (P-channel type) MOSFETs. The driver transistors DV1
and DV2 and load transistors LD1 and LD2 are connected to form a
cross-feedback circuit.
[0023] When the memory cell is selected, the source potential
(higher potential) VDD_cell of the transistors LD1 and LD2, and the
source potential (lower potential) VSS_cell of the transistors DV1
and DV2 are set to be a power supply potential VDD and a ground
potential VSS, respectively. In the case of an ordinary SRAM
provided with no countermeasure in view of circuitry for reducing
standby leakage, the potential VDD_cell and potential VSS_cell are
maintained at the power supply potential VDD and ground potential
VSS, respectively, even when it is on standby. However, in the case
of the device shown in FIG. 1, the level of the lower potential
VSS_cell (or it may be the level of the higher potential VDD_cell)
is controlled to reduce the standby leakage, when it is on
standby.
[0024] More specifically, a potential line connecting a node on the
lower potential VSS_cell side to a VSS potential source is provided
with first and second additional transistors (NMOSFETs) NA and NB
disposed thereon in parallel for selectively bringing the line into
conduction. One additional transistor NA is supplied with a
selection signal on its gate terminal, such that it is set in the
ON-state when the memory cell is selected, and it is set in the
OFF-state when the memory cell is non-selected. The other
additional transistor NB is configured in a diode-connection state
in which its gate terminal and drain terminal are connected to each
other. The transistor NB is turned on by a voltage drop generated
in the memory cell when the transistor NA is set in the
OFF-state.
[0025] FIG. 2 is a view showing the potential relationship within a
memory cell on standby in the device shown in FIG. 1. When the
memory cell is selected, the ground potential VSS is applied to the
node on the lower potential VSS_cell side, through the transistor
NA set in the ON-state. On the other hand, when the memory cell is
non-selected and the transistor NA is set in the OFF-state, the
level of the lower potential VSS_cell gradually increases from the
ground potential VSS due to leakage, as shown in FIG. 2. When the
lower potential VSS_cell increases to the threshold voltage Vth(NB)
of the transistor NB, the transistor NB is turned on.
[0026] As a consequence, the level of the lower potential VSS_cell
is clamped by the threshold voltage Vth(NB). Accordingly, the
voltage (standby voltage VSB) applied to the memory cell on standby
is clamped at a value expressed by the following formula (1).
VSB=VDD-VSS-Vth(NB) (1)
[0027] Furthermore, as expressed by the following formula (2), the
standby voltage may be further relaxed by increasing the number M
of second additional transistors NB connected in series.
VSB=VDD-VSS-Vth(NB).times.M (2)
[0028] As described above, the potential line connecting the node
on the lower potential VSS_cell side to the VSS potential source is
provided with the MOSFET disposed thereon and configured in a
diode-connection state, so that the standby voltage VSB is easily
relaxed. However, according to this countermeasure, the protection
circuit (additional transistor NB) requires a sufficient margin to
absorb fluctuations in the power supply potential VDD, variations
(mainly process errors) in the threshold voltage Vth of the memory
cell transistors, and so forth, in order to prevent retention data
from being destroyed.
[0029] More specifically, for example, where the power supply
potential VDD fluctuates within .+-.10%, leakage becomes maximum
when the potential increases to [VDD+10%]. However, it is necessary
for the standby voltage to sufficiently retain cell data, even when
the potential decreases to [VDD-10%]. If the number M of second
additional transistors NB connected in series is set based only on
[VDD+10%], a voltage drop generated in the memory cell at [VDD-10%]
becomes too large, thereby likely destroying cell data.
[0030] As described above, the countermeasure shown in FIG. 1 needs
to ensure a sufficient margin for fluctuations in the VDD,
variations in the threshold voltage Vth of transistors, and so
forth. For this reason, the countermeasure shown in FIG. 1 has a
problem in that the reduction in the standby voltage is
insufficient.
[0031] Embodiments of the present invention achieved on the basis
of the findings given above will now be described with reference to
the accompanying drawings. In the following description, the
constituent elements having substantially the same function and
arrangement are denoted by the same reference numerals, and a
repetitive description will be made only when necessary.
First Embodiment
[0032] FIG. 3 is a block diagram showing an SRAM (semiconductor
storage device) according to a first embodiment of the present
invention. The SRAM includes a memory cell array 21, in which
memory cells 24 are respectively disposed at addresses arrayed in a
matrix format. Word lines WL for selecting the memory cells are
respectively connected to the rows of the memory cell array 21.
Complementary pairs of data lines BL and /BL for transmitting data
to and from the memory cells are respectively connected to the
columns of the memory cell array 21.
[0033] A row address buffer 11 and a row decoder 13 are disposed to
select the word lines WL. A column address buffer 15 and a column
decoder 17 are disposed to select the data lines BL and /BL. A
sensing circuit 19 is connected to the data lines BL and /BL, for
reading stored data. The row address buffer 11 and column address
buffer 12 are connected to a control section CS1 for generating
address signals, data signals, and so forth. The control section
CS1 is disposed on a substrate common to the memory cell array 21,
or is formed as a device separate from the memory cell array
21.
[0034] FIG. 4 is an enlarged view showing one memory cell 24 in the
memory cell array 21 shown in FIG. 3. As shown in FIG. 4, each
memory cell includes six transistors, i.e., two driver transistors
DV1 and DV2, two load transistors LD1 and LD2, and two transfer
gate transistors XF1 and XF2. The transistors DV1, DV2, XF1, and
XF2 are formed of NMIS- (MIS: Metal-Insulator-Semiconductor) FETs,
and typically formed of NMOSFETs. The transistors LD1 and LD2 are
formed of PMISFETs, and typically formed of PMOSFETs. The two
transistors in each of the pair of transistors DV1 and DV2, the
pair of transistors XF1 and XF2, and the pair of transistors LD1
and LD2 are designed to have the same specifications as each other
(size, layout pattern, and so forth) and the same threshold voltage
as each other (formed in the same process steps).
[0035] The driver transistors DV1 and DV2 and load transistors LD1
and LD2 are connected to form a cross-feedback circuit.
Specifically, the drain terminals of the transistors DV1 and LD1
are connected to each other. The drain terminals of the transistors
DV2 and LD2 are connected to each other. The gate terminals of the
transistors DV1 and LD1 are connected to the drain terminals of the
transistors DV2 and LD2 and the source terminal of the transfer
gate transistor XF2. The gate terminals of the transistors DV2 and
LD2 are connected to the drain terminals of the transistors DV1 and
LD1 and the source terminal of the transfer gate transistor
XF1.
[0036] Each of the word lines WL is connected to the gate terminals
of the transistors XF1 and XF2. Each of the complementary pairs of
data lines BL and /BL are respectively connected to the drain
terminals of the transistors XF1 and XF2. The source terminals of
the transistors LD1 and LD2 are connected to a supply source of a
power supply potential (a first drive potential) VDD through a
potential line DL. The source terminals of the transistors DV1 and
DV2 are connected to a supply source of a ground potential (a
second drive potential lower than the first drive potential) VSS
through a potential line SL.
[0037] FIG. 5 is a view showing the SRAM (semiconductor storage
device) according to the first embodiment, focusing on circuitry
for clamping the standby voltage thereof. AS shown in FIG. 5, the
potential line SL connected to the ground potential VSS is provided
with a first additional transistor N1 disposed thereon for
selectively bringing the potential line SL into conduction. The
transistor N1 is formed of an NMISFET, and typically an NMOSFET.
The gate terminal of the transistor N1 is supplied, through a
supply line L1 (for example, from the control section CS1), with a
selection signal SEL to set the transistor N1 in the ON-state when
the memory cell is selected. Specifically, the transistor N1 is set
in the ON-state when the memory cell is selected, and it is set in
the OFF-state when the memory cell is non-selected. When the memory
cell is selected, the ground potential VSS is applied to the node
on the lower potential VSS_cell side, through the transistor N1 set
in the ON-state.
[0038] The potential line SL is also provided with second and third
additional transistors P1 and P2 disposed thereon for selectively
bringing the potential line SL into conduction, such that the
transistors P1 and P2 are in parallel with the first additional
transistor N1. The transistors P1 and P2 are formed of PMISFETs,
and typically PMOSFETs. The gate terminals of the transistors P1
and P2 are always supplied with potentials pg1 and pg2,
respectively, generated in a bias generator 31. The transistors P1
and P2 are turned on, with reference to the bias potentials pg1 and
pg2, by a voltage drop generated in the corresponding memory cell
when the transistor N1 is set in the OFF-state. As described later,
only one of the transistors P1 and P2 serves to clamp the voltage
(standby voltage VSB) applied to the memory cell on standby.
[0039] The bias generator 31 is arranged such that the bias
potentials pg1 and pg2 reflect fluctuations in the potential
difference between the power supply potential (first drive
potential) VDD and ground potential (second drive potential) VSS,
and variations (mainly process errors) in the threshold voltage Vth
of transistors. In order to carry this out, the bias generator 31
includes two paths (i.e. two bias generation circuits) 33 and 35,
each of which is supplied with the power supply potential VDD and
ground potential VSS at opposite ends, and provided with
predetermined devices disposed thereon, as described below. The
bias potentials pg1 and pg2 are potentials between the power supply
potential VDD and ground potential VSS, and are respectively
outputted from output nodes O1 and O2 variably set in position on
the two paths 33 and 35.
[0040] More specifically, the first path 33 is provided with
transistors RepLD and RepP1 and a plurality of resistors Rm
disposed thereon in series, in this order from the end supplied
with the power supply potential VDD. The second path 35 is provided
with transistors RepDV and RepP2 and a plurality of resistors Rn
disposed thereon in series, in this order from the end supplied
with the power supply potential VDD. The transistors RepLD, RepP1,
and RepP2 are formed of PMISFETs, and typically PMOSFETs. The
transistor RepDV is formed of an NMISFET, and typically an NMOSFET.
Each of the transistors RepLD, RepP1, RepDV, and RepP2 is disposed
on the paths 33 and 35 in a diode-connection state in which its
gate terminal and drain terminal are connected to each other.
[0041] The transistors RepLD and RepDV are respectively formed of
replica transistors of the load transistor (LD1 or LD2) and drive
transistor (DV1 or DV2), which constitute the cross-feedback
circuit of the memory cell. The transistors RepP1 and RepP2 are
respectively formed of replica transistors of the additional
transistors P1 and P2 disposed on the potential line SL.
Specifically, the transistors RepLD, RepP1, RepDV, and RepP2 are
designed to have the same specifications (size, layout pattern, and
so forth) and the same threshold voltage as the transistors LD1 (or
LD2), P1, DV1 (or DV2), and P2, respectively, (formed in the same
process steps).
[0042] FIG. 6 is a view showing the potential relationship within a
memory cell on standby in the device shown in FIG. 5. When the
memory cell is selected, the ground potential VSS is applied to the
node on the lower potential VSS_cell side, through the transistor
N1 set in the ON-state. On the other hand, when the memory cell is
non-selected and the transistor N1 is set in the OFF-state, the
potential level at the node on the lower potential VSS_cell side
gradually increases from the VSS due to leakage. When the lower
potential VSS_cell increases and exceeds one of the threshold
voltages of the transistors P1 and P2 present at the lower level,
this transistor P1 or P2 is turned on. As a consequence, the
voltage (standby voltage VSB) applied to the memory cell on standby
is clamped by this turned-on transistor P1 or P2.
[0043] Since bias potential setting on the two paths 33 and 35 are
based on essentially the same principle, an explanation will be
first given of the first path 33. Specifically, as described above,
the replica transistor RepLD configured in a diode-connection state
has the same threshold voltage as the load transistor (LD1 or LD2),
(i.e., Vth(RepLD)=Vth(LD)). The replica transistor RepP1 configured
in a diode-connection state has the same threshold voltage as the
additional transistor P1, (i.e., Vth(RepP1)=Vth(P1)). Furthermore,
a predetermined number (Y) of resistors selected from the total
number (X) of resistors Rm are interposed between the transistor
RepP1 and output node O1.
[0044] In this case, the difference between the power supply
potential VDD and the potential at the output node O1 becomes a
value corresponding to the sum of the threshold voltages Vth(LD)
and Vth(P1) plus a margin (I.sub.Rm.times.Rm.times.(Y/X)) obtained
by resistance division. The I.sub.Rm denotes a current flowing
through the resistors Rm. Accordingly, the bias potential pg1
generated by the first path 33 is expressed by the following
formula (3). pg1 = VDD - Vth .function. ( LD ) - Vth .function. (
P1 ) - I Rm .times. Rm .times. ( Y .times. / .times. X ) ( 3 )
##EQU1##
[0045] In this formula, the Vth(LD), Vth(P1), and
"I.sub.rm.times.Rm.times.(Y/X)" denote the threshold voltage of the
transistor LD1 (or LD2), the threshold voltage of the transistor
P1, and the margin obtained by resistance division,
respectively.
[0046] The transistor P1 supplied with the bias potential pg1 on
the gate terminal is turned on when the lower potential VSS_cell of
the memory cell comes to satisfy the following formula (4).
VSS_cell-pg1>Vth(P1) (4)
[0047] As a consequence, where the first path 33 is effective, the
level of the lower potential VSS_cell is clamped by the bias
potential pg1 and threshold voltage Vth(P1), as shown in the
following formula (5). VSS_cell = .times. pg1 + Vth .function. ( P1
) = .times. VDD - Vth .function. ( LD ) - Vth .function. ( P1 ) - I
Rm .times. Rm .times. .times. ( Y .times. / .times. X ) + Vth
.function. ( P1 ) ( 5 ) ##EQU2##
[0048] Accordingly, where the first path 33 is effective, the
voltage (standby voltage VSB) applied to the memory cell on standby
is clamped by a value expressed by the following formula (6). VSB =
.times. VDD - VSS_cell = .times. Vth .function. ( LD ) + I Rm
.times. Rm .times. ( Y .times. / .times. X ) ( 6 ) ##EQU3##
[0049] Similarly, where the second path 35 is effective, the level
of the lower potential VSS_cell is clamped by the bias potential
pg2 and threshold voltage Vth(P2), as shown in the following
formula (7). VSS_cell = .times. pg2 + Vth .function. ( P2 ) =
.times. VDD - Vth .function. ( DV ) - Vth .function. ( P2 ) - I Rn
.times. Rn .times. .times. ( Y .times. / .times. X ) + Vth
.function. ( P2 ) ( 7 ) ##EQU4##
[0050] In this formula, the Vth(DV), Vth(P2), and
"I.sub.rn.times.Rn.times.(Y/X)" denote the threshold voltage of the
transistor DV1 (or DV2), the threshold voltage of the transistor
P2, and the margin obtained by resistance division,
respectively.
[0051] Accordingly, where the second path 35 is effective, the
voltage (standby voltage VSB) applied to the memory cell on standby
is clamped by a value expressed by the following formula (8). VSB =
.times. VDD - VSS_cell = .times. Vth .function. ( DV ) + I Rn
.times. Rn .times. ( Y .times. / .times. X ) ( 8 ) ##EQU5##
[0052] However, actually, the level of the lower potential VSS_cell
is clamped by one of the transistors P1 and P2, which is turned on
at the lower level. Accordingly, the voltage (standby voltage VSB)
applied to the memory cell on standby is clamped by a value
expressed by the following formula (9). VSB = .times. max ( " Vth
.function. ( LD ) + I Rm .times. Rm .times. ( Y .times. / .times. X
) " : " .times. Vth .function. ( DV ) + I Rn .times. Rn .times. ( Y
.times. / .times. X ) " ) ( 9 ) ##EQU6##
[0053] In this formula, the max(A:B) denotes that only the higher
one of A and B is effective.
[0054] Typically, the margins "I.sub.Rm.times.Rm.times.(Y/X)" and
"I.sub.Rn.times.Rn.times.(Y/X)" obtained by resistance division are
set to be the same value. In this case, which one of the
transistors P1 and P2 is effective to clamp the standby voltage VSB
is determined by the magnitude relationship between the threshold
voltages Vth(LD) and Vth(DV).
[0055] The bias potentials pg1 and pg2 are set such that one of the
transistors P1 and P2 can be turned on before increase in the level
of the lower potential VSS_cell (i.e. voltage drop in the memory
cell) proceeds to a degree at which the data stored in the
corresponding memory cell is destroyed. In order to retain the data
stored in an SRAM memory cell on standby (WL=L), it is necessary to
maintain one of the load transistors LD1 (or LD2) and the other of
the driver transistors DV2 (or DV1) in the ON-state. Accordingly,
the bias potentials pg1 and pg2 are preferably set such that,
before either one of the transistors LD1 (or LD2) and DV2 (or DV1)
is turned off due to the voltage drop, one of the transistors P1
and P2 is turned on to stop the voltage drop. In addition, even
among memory cells forming the same array, there may be a
difference in the threshold voltage due to process errors.
Accordingly, the margin ("I.sub.Rm.times.Rm.times.(Y/X)" or
"I.sub.Rn.times.Rn.times.(Y/X)") obtained by resistance division
can be set, in consideration of variations in the threshold voltage
of the transistors LD1, LD2, DV1, and DV2.
[0056] As described above, in the device shown in FIG. 5, the bias
generator 31 is arranged such that the bias potentials pg1 and pg2
reflect fluctuations in the potential difference between the power
supply potential (first drive potential) VDD and ground potential
(second drive potential) VSS, and variations (mainly process
errors) in the threshold voltage Vth of transistors. Accordingly,
even if fluctuations in the VDD and variations in the threshold
voltage Vth occur, the VSS_cell can adapt to allow for them,
whereby the standby voltage applied to the memory cell always takes
on a proper value. In this case, since there is no need to ensure a
sufficient margin on the protection circuit, unlike the
conventional technique, it is possible to effectively relax the
standby voltage, thereby further reducing the standby leakage.
[0057] In the arrangement shown in FIG. 5, the bias generator 31
includes the two paths (i.e. two bias generation circuits) 33 and
35 respectively for the load transistors LD1 and LD2 and the driver
transistors DV1 and DV2. This arrangement is adopted on the
assumption that the magnitude relationship between the threshold
voltages Vth of the load transistors LD1 and LD2 and the driver
transistors DV1 and DV2 is not known in advance. However, if the
magnitude relationship between the threshold voltages Vth is known
in advance, it suffices that only one of the paths is disposed for
one of the transistors having the highest threshold voltage
Vth.
Second Embodiment
[0058] FIG. 7 is a view showing an SRAM (semiconductor storage
device) according to a second embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof. The
SRAM according to the second embodiment has the same structure as
the SRAM according to the first embodiment except the bias
generator.
[0059] As shown in FIG. 7, the bias generator 41 of this SRAM
includes two paths (i.e. two bias generation circuits) 43 and 45,
each of which is supplied with the power supply potential VDD and
ground potential VSS at opposite ends. The first path 43 is
provided with a transistor group RepLDA, a transistor group RepLDB,
a transistor RepP1, and a plurality of resistors Rm disposed
thereon in series, in this order from the end supplied with the
power supply potential VDD. The second path 45 is provided with a
transistor group RepDVA, a transistor group RepDVB, a transistor
RepP2, and a plurality of resistors Rn disposed thereon in series,
in this order from the end supplied with the power supply potential
VDD. The transistors RepP1 and RepP2 and a plurality of resistors
Rm and Rn are essentially the same as those shown in FIG. 5.
[0060] The transistor group RepLDA is formed of a number N(N is a
natural number of 2 or more) of replica transistors of the load
transistor LD1 (or LD2) connected in parallel, wherein each of
these replica transistors is configured in a diode-connection
state. The transistor group RepLDB is formed of a number N of
replica transistors of the load transistor LD2 (or LD1) connected
in parallel, wherein each of these replica transistors is
configured in a diode-connection state. The transistor group RepDVA
is formed of a number N of replica transistors of the drive
transistor DV1 (or DV2) connected in parallel, wherein each of
these replica transistors is configured in a diode-connection
state. The transistor group RepDVB is formed of a number N of
replica transistors of the drive transistor DV2 (or DV1) connected
in parallel, wherein each of these replica transistors is
configured in a diode-connection state.
[0061] As described above, a plurality of replica transistors are
connected in parallel, whereby the threshold voltage of the
transistor group can be less variable. In other words, variations
of the threshold voltages of the replica transistors can reduce
adverse influences. It should be noted that this arrangement using
a plurality of replica transistors connected in parallel is
effective even in a case where only one of the transistor groups
RepLDA and RepLDB is disposed, and/or only one of the transistor
groups RepDVA and RepDVB is disposed.
[0062] Each of the paths 43 and 45 is provided with the replica
transistors of memory cell transistors, connected in series,
whereby each of bias potentials pg11 and pg12 can reflect
variations in the threshold voltage Vth of the memory cell
transistors. In this case, the two set of replica transistors
(RepLDA and RepLDB, or RepDVA and RepDVB) of memory cell
transistors, connected in series, take on a potential drop from the
power supply potential VDD to each of the bias potentials pg11 and
pg12, and the number of resistors Rm and Rn can be thereby reduced
(resistance value can be lowered).
[0063] It should be noted that this arrangement using a plurality
of replica transistors of memory cell transistors, connected in
series, is effective even in a case where each of the transistor
group RepLDA, RepLDB, RepDVA, and RepDVB is replaced with the
corresponding one replica transistor. This modification is
structured, such that the first and second paths 33 and 35 shown in
FIG. 5 are provided with additional second replica transistors
RepLD and RepDV, respectively. In this case, the second replica
transistor RepLD is disposed on the first path 33 between the end
supplied with the power supply potential VDD and the output node
O1, in series with the first replica transistor RepLD. The second
replica transistor RepLD is configured in a diode-connection state
in which its gate terminal and drain terminal are connected to each
other. The second replica transistor RepDV is disposed on the
second path 35 between the end supplied with the power supply
potential VDD and the output node O2, in series with the first
replica transistor RepDV. The second replica transistor RepDV is
configured in a diode-connection state in which its gate terminal
and drain terminal are connected to each other.
Third Embodiment
[0064] FIG. 8 is a view showing an SRAM (semiconductor storage
device) according to a third embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof. The
SRAM according to the third embodiment has the same structure as
the SRAM according to the first embodiment except the bias
generator.
[0065] As shown in FIG. 8, the bias generator 51 of this SRAM
further includes a current mirror circuit 53 to supply a constant
current regardless of fluctuations in the power supply potential
VDD. The current mirror circuit 53 is connected in parallel with
two paths (i.e. two bias generation circuits) 33 and 35. The path
of the current mirror circuit 53 is provided with a transistor 55
disposed thereon, whose gate terminal is connected to a constant
potential source to avoid any influence caused by fluctuations in
the power supply potential VDD. With this arrangement, bias
potentials pg21 and pg22 outputted from the bias generator 51 can
be more stable.
Fourth Embodiment
[0066] FIG. 9 is a view showing an SRAM (semiconductor storage
device) according to a fourth embodiment of the present invention,
focusing on circuitry for clamping the standby voltage thereof. In
the first to third embodiments, the level of the lower potential
VSS_cell of a memory cell is controlled to clamp the standby
voltage thereof (i.e., to reduce the standby leakage). However, the
level of the higher potential VDD_cell may be controlled in
accordance with the same concept. The SRAM shown in FIG. 9 is
configured on the basis of such an aspect. The memory cell array 21
and memory cell 24 of this SRAM have the same structures as those
shown in FIGS. 3 and 4.
[0067] AS shown in FIG. 9, a potential line DL connected to the
power supply potential VDD is provided with a first additional
transistor P11 disposed thereon for selectively bringing the
potential line DL into conduction. The transistor P11 is formed of
a PMISFET, and typically a PMOSFET. The gate terminal of the
transistor P11 is supplied, through a supply line L11, with a
selection signal SEL to set the transistor P11 in the ON-state when
the memory cell is selected. Specifically, the transistor P11 is
set in the ON-state when the memory cell is selected, and it is set
in the OFF-state when the memory cell is non-selected. When the
memory cell is selected, the power supply potential VDD is applied
to the node on the higher potential VDD_cell side, through the
transistor P11 set in the ON-state.
[0068] The potential line DL is also provided with second and third
additional transistors N11 and N12 disposed thereon for selectively
bringing the potential line DL into conduction, such that the
transistors N11 and N12 are in parallel with the first additional
transistor P11. The transistors N11 and N12 are formed of NMISFETs,
and typically NMOSFETs. The gate terminals of the transistors N11
and N12 are always supplied with potentials ng1 and ng2,
respectively, generated in a bias generator 61. The transistors N11
and N12 are turned on, with reference to the bias potentials ng1
and ng2, by a voltage drop generated in the corresponding memory
cell when the transistor P11 is set in the OFF-state. As described
later, only one of the transistors N11 and N12 serves to clamp the
voltage (standby voltage VSB) applied to the memory cell on
standby.
[0069] The bias generator 61 is arranged such that the bias
potentials ng1 and ng2 reflect fluctuations in the potential
difference between the power supply potential (first drive
potential) VDD and ground potential (second drive potential) VSS,
and variations (mainly process errors) in the threshold voltage Vth
of transistors. In order to carry this out, the bias generator 61
includes two paths (i.e. two bias generation circuits) 63 and 65,
each of which is supplied with the power supply potential VDD and
ground potential VSS at opposite ends, and provided with
predetermined devices disposed thereon, as described below. The
bias potentials ng1 and ng2 are potentials between the power supply
potential VDD and ground potential VSS, and are respectively
outputted from output nodes O11 and O12 variably set in position on
the two paths 63 and 65.
[0070] More specifically, the first path 63 is provided with
transistors RepLD and RepN11 and a plurality of resistors Rm
disposed thereon in series, in this order from the end supplied
with the ground potential VSS. The second path 65 is provided with
transistors RepDV and RepN12 and a plurality of resistors Rn
disposed thereon in series, in this order from the end supplied
with the ground potential VSS. The transistor RepLD is formed of a
PMISFET, and typically a PMOSFET. The transistors RepDV, RepN11,
and RepN12 are formed of NMISFETs, and typically NMOSFETs. Each of
the transistors RepLD, RepN11, RepDV, and RepN12 is disposed on the
paths 63 and 65 in a diode-connection state in which its gate
terminal and drain terminal are connected to each other.
[0071] The transistors RepLD and RepDV are respectively formed of
replica transistors of the load transistor (LD1 or LD2) and drive
transistor (DV1 or DV2), which constitute the cross-feedback
circuit of the memory cell. The transistors RepN11 and RepN12 are
respectively formed of replica transistors of the additional
transistors N11 and N12 disposed on the potential line DL.
Specifically, the transistors RepLD, RepN11, RepDV, and RepN12 are
designed to have the same specifications (size, layout pattern, and
so forth) and the same threshold voltage as the transistors LD1 (or
LD2), N11, DV1 (or DV2), and N12, respectively, (formed in the same
process steps).
[0072] FIG. 10 is a view showing the potential relationship within
a memory cell on standby in the device shown in FIG. 9. When the
memory cell is selected, the power supply potential VDD is applied
to the node on the higher potential VDD_cell side, through the
transistor P11 set in the ON-state. On the other hand, when the
memory cell is non-selected and the transistor P11 is set in the
OFF-state, the potential level at the node on the higher potential
VDD_cell side gradually decreases from the VDD due to leakage. When
the higher potential VDD_cell decreases and becomes lower than one
of the threshold voltages of the transistors N11 and N12 present at
the higher level, this transistor N11 or N12 is turned on. As a
consequence, the voltage (standby voltage VSB) applied to the
memory cell on standby is clamped by this turned-on transistor N11
or N12.
[0073] Accordingly, the level of the higher potential VDD_cell is
clamped by one of the transistors N11 and N12, which is turned on
at the higher level. As a consequence, in accordance with
development explained along with the formulas (3) to (9), the
voltage (standby voltage VSB) applied to the memory cell on standby
is clamped by a value expressed by the following formula (10),
which is the same as the formula (9). VSB = .times. max ( .times. "
.times. Vth .function. ( LD ) + I Rm .times. Rm .times. ( Y .times.
/ .times. X ) " : " .times. Vth .function. ( DV ) + I Rn .times. Rn
.times. ( Y .times. / .times. X ) " ) ( 10 ) ##EQU7##
[0074] In this formula, the Vth(LD),
"I.sub.Rm.times.Rm.times.(Y/X)", Vth(DV), and
"I.sub.Rn.times.Rn.times.(Y/X)" denote the threshold voltage of the
transistor LD1 (or LD2), a margin obtained by resistance division,
the threshold voltage of the transistor DV1 (or DV2), and a margin
obtained by resistance division, respectively. Also, the max(A:B)
denotes that only the higher one of A and B is effective.
[0075] The bias potentials ng1 and ng2 are set such that one of the
transistors N11 and N12 can be turned on before decrease in the
level of the higher potential VDD_cell (i.e. voltage drop in the
memory cell) proceeds to a degree at which the data stored in the
corresponding memory cell is destroyed. Accordingly, the bias
potentials ng1 and ng2 are preferably set such that, before any one
of the transistors LD1, LD2, DV1, and DV2 is turned off due to the
voltage drop, one of the transistors N11 and N12 is turned on to
stop the voltage drop.
[0076] (Matters Common to the First to Fourth Embodiments)
[0077] In the embodiment described above, each memory cell 24 of
the RAM is formed of six transistors, as shown in FIG. 4. However,
the ideas included in these embodiments may be similarly applied to
an SRAM of another type, such as an SRAM, in which each memory cell
is formed of four transistors and two resistors substituting two
load transistors. Specifically, an SRAM of another type can be
arranged to clamp the voltage applied to a memory cell on standby,
while utilizing a bias potential that reflects fluctuations in the
potential difference between the drive potentials, and variations
in the threshold voltage of the memory cell transistors.
[0078] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *