U.S. patent application number 11/202334 was filed with the patent office on 2006-02-23 for magnetic oscillator, magnetic head, and magnetic recording and reproducing apparatus.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. Invention is credited to Rie Sato.
Application Number | 20060039089 11/202334 |
Document ID | / |
Family ID | 35909364 |
Filed Date | 2006-02-23 |
United States Patent
Application |
20060039089 |
Kind Code |
A1 |
Sato; Rie |
February 23, 2006 |
Magnetic oscillator, magnetic head, and magnetic recording and
reproducing apparatus
Abstract
The present invention is to be capable of suppressing magnetic
white noises as far as possible. A resonant magneto-resistance
effect element includes a first magnetic layer whose magnetization
direction is substantially parallel to a film plane, a second
magnetic film whose magnetization direction is substantially
perpendicular to the film plane, and a non-magnetic layer which is
provided between the first and second layers.
Inventors: |
Sato; Rie; (Yokohama-shi,
JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
Tokyo
JP
|
Family ID: |
35909364 |
Appl. No.: |
11/202334 |
Filed: |
August 12, 2005 |
Current U.S.
Class: |
360/324 ;
G9B/5.116 |
Current CPC
Class: |
G11B 5/3903 20130101;
G01R 33/093 20130101; B82Y 25/00 20130101 |
Class at
Publication: |
360/324 |
International
Class: |
G11B 5/33 20060101
G11B005/33; G11B 5/127 20060101 G11B005/127 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 17, 2004 |
JP |
2004-237463 |
Claims
1. A resonant magneto-resistance effect element comprising: a first
magnetic film whose magnetization direction is substantially
parallel to a film plane; a second magnetic film whose
magnetization direction is substantially perpendicular to the film
plane, and a first non-magnetic film which is provided between the
first and second magnetic films.
2. A resonant magneto-resistance effect element according to claim
1, comprises a stacked structure where a plurality of stacked layer
are stacked via a second non-magnetic film, the stacked layer
comprises the first magnetic film, the first non-magnetic film, and
the second magnetic film.
3. A resonant magneto-resistance effect element according to claim
1, wherein the first and second magnetic films are each a single
film.
4. A resonant magneto-resistance effect element according to claim
1, wherein a difference in magnitude between a shape anisotropy
magnetic field of the first magnetic film and a crystalline
anisotropy magnetic field in a direction perpendicular to the film
plane is 500 Oe or less.
5. A resonant magneto-resistance effect element according to claim
1, wherein a difference in magnitude between a shape anisotropy
magnetic field of the second magnetic film and a crystalline
anisotropy magnetic field in a direction perpendicular to the film
plane is 500 Oe or less.
6. A resonant magneto-resistance effect element according to claim
1, wherein at least one of the first magnetic film and the second
magnetic film has a single magnetic domain.
7. A resonant magneto-resistance effect element according to claim
1, wherein a thickness of each of the first and second magnetic
films is 3 nm or less.
8. A resonant magneto-resistance effect element according to claim
1, comprising a first electrode provided on opposite side of the
first magnetic film from the first non-magnetic film and a second
electrode provided on opposite side of the second magnetic film
from the first non-magnetic film.
9. A resonant magneto-resistance effect element according to claim
8, comprising a perpendicularly magnetizing bias film provided
between the first magnetic film and the first electrode, the
perpendicularly magnetizing bias film provides magnetic field
substantially perpendicular to its film plane.
10. A resonant magneto-resistance effect element according to claim
1, further comprising a parallel magnetizing bias film provided at
side portions of the first magnetic film, the first non-magnetic
film, and the second magnetic film, the parallel magnetizing bias
film provides a magnetic field substantially parallel to film
planes of the first magnetic film, the first non-magnetic film and
the second magnetic film.
11. A resonant magneto-resistance effect element according to claim
1, further comprising a perpendicularly magnetizing bias film
provided at side portions of the first magnetic film, the first
non-magnetic film, and the second magnetic film, the
perpendicularly magnetizing bias film provides a magnetic field
substantially perpendicular to its film plane.
12. A resonant magneto-resistance effect element according to claim
2, wherein a difference in magnitude between a shape anisotropy
magnetic field of the first magnetic film and a crystalline
anisotropy magnetic field in a direction perpendicular to the film
plane is 500 Oe or less.
13. A resonant magneto-resistance effect element according to claim
2, wherein a difference in magnitude between a shape anisotropy
magnetic field of the second magnetic film and a crystalline
anisotropy magnetic field in a direction perpendicular to the film
plane is 500 Oe or less.
14. A resonant magneto-resistance effect element according to claim
2, wherein at least one of the first magnetic film and the second
magnetic film has a single magnetic domain.
15. A resonant magneto-resistance effect element according to claim
2, wherein a thickness of each of the first and second magnetic
films is 3 nm or less.
16. A resonant magneto-resistance effect element comprises a first
and second magnetic films whose magnetization directions are
substantially parallel to a film plane, and a stacked layer, the
stacked layer being provided between the first and second magnetic
films, the stacked layer comprising a plurality of sets of a third
magnetic film whose magnetization direction is substantially
perpendicular to the film plane and a non-magnetic film.
17. A resonant magneto-resistance effect element according to claim
16, wherein at least one of the first and second magnetic films,
and the third magnetic film has a single magnetic domain
structure.
18. A resonant magneto-resistance effect element according to claim
16, wherein a thickness of each of the first to third magnetic
films is 3 nm or less.
19. A magnetic head comprising a resonant magneto-resistance effect
element according to claim 1 as a reproducing element.
20. A magnetic recording and reproducing apparatus comprising a
magnetic head according to claim 19.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is based upon and claims the benefit of
priority from prior Japanese Patent Application No. 2004-237463
filed on Aug. 17, 2004 in Japan, the entire contents of which are
incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a magnetic oscillator, a
magnetic head, and a magnetic recording and reproducing
apparatus.
[0004] 2. Related Art
[0005] Since advent of a GMR (giant magneto-resistance) head
utilizing a giant magneto-resistance effect (GMR effect), a
recording density in magnetic recording is improved at 100%
annually. The GMR element is constituted of a stacked film having a
sandwich structure of a ferromagnetic layer/a non-magnetic layer/a
ferromagnetic layer. The GMR element is a device utilizing a
magneto-resistance effect of a so-called spin valve film, which is
constituted such that magnetization of one of the ferromagnetic
layers is pinned by application of exchange bias to the one and a
magnetization direction of the other thereof is changed by applying
external magnetic field thereto, so that change in an angle angle
defined between the magnetization directions of the two
ferromagnetic layers is detected as a change in resistance value.
There have been developed a CIP (current in plane)-GMR element
which causes current to flow in a film plane of a spin valve film
to detect a resistance change and a CPP (current perpendicular to
plane)-GMR element which causes current to flow perpendicularly to
a film plane of a spin valve film to detect a resistance change.
Both the CIP-GMR element and the CPP-GMR element have a
magneto-resistance ratio (MR ratio) of several % or so, and it is
considered that both the elements can accommodate a recording
density of about 200 Gbit/inch.sup.2.
[0006] In order to accommodate magnetic recording at a higher
density, development of a TMR element utilizing a tunneling
magneto-resistance effect (TMR effect) has been gone ahead. The TMR
element comprises a stacked film of a ferromagnetic layer/an
insulating layer/a ferromagnetic layer, and it causes a tunnel
current to flow in the insulating layer on application of a voltage
between the ferromagnetic layers. The TMR element is an element
which utilizes such a fact that the magnitude of a tunnel current
is changed according to the magnetization directions of the upper
and lower ferromagnetic layers to detect change of an angle defined
by the magnetization directions as a tunnel resistance value. A TMR
element having an MR ratio up to about 50% has been obtained. Since
the TMR element has a MR ratio larger than that of the GMR element,
its signal voltage becomes larger.
[0007] However, there is such a problem that not only a pure signal
component but also a noise component due to a shot noise become
large, and an S/N ratio (a signal-noise ratio) is not improved. The
shot noise is caused by current fluctuation generated due to
irregular passing of electrons through a tunnel barrier, and it
increases in proportion to square root of a tunnel resistance
value. In order to suppress the shot noise and obtain a required
signal voltage, therefore, it is necessary to make a tunnel
insulating layer thin to lower a tunnel resistance.
[0008] Since it is necessary to reduce a device size to a size
corresponding to a recording bit or so according to increase in
recording density, it is necessary to lower a junction resistance
of a tunnel insulating layer, namely, make the insulating layer
thin, according to increase in density. A junction resistance of 1
.OMEGA.cm.sup.2 or less is required in a recording density of 300
Gbit/inch.sup.2 and therefore a tunnel insulating layer with a
thickness corresponding to a thickness of two atoms must be formed
in terms of a film thickness of an Al--O (aluminum oxide film)
tunnel insulating layer. Since shortage between the upper and lower
electrodes becomes easier to occur according to thinning of the
tunnel insulating layer, which leads to reduction of a MR ratio, it
becomes exponentially difficult to manufacture an element.
Therefore, the limit of the TMR element is estimated to be 300
Gbit/inch.sup.2.
[0009] The respective elements described above utilize the
magneto-resistance effect in a board sense, but a problem about a
magnetic white noise common to these elements emerges suddenly in
recent years. Since the noise is different from an electric noise
such as the shot noise described above and is due to thermal
fluctuation of magnetization, it is thought that the noise becomes
more dominant according to fineness of an element so that the white
noise outstrips the electric noise in an element corresponding to
200 Gbpis to 300 Gbpsi. In order to avoid the magnetic white noise
and further increase a recording density in magnetic recording, a
fine magnetic sensor operating based upon a principle different
from the conventional magneto-resistance effect is required, and
development of a resonant magneto-resistance effect element has
been gone ahead as such a magnetic sensor (for example, see R.
Sato, et. al. J. Magn. Magn. Mat. Vol. 279, p. 36 (2004)).
[0010] A characteristic improvement of a conventional resonant
magneto-resistance effect element has been promoted by using
artificial anti-ferromagnetic material with reduced defect as
magnetic material in a structure where a non-magnetic layer with a
thickness of 1 nm or less is sandwiched between ferromagnetic
layers whose magnetization directions are perpendicular to a film
plane. However, the artificial ferromagnetic material includes many
difficult points for practical application due to necessity of a
film forming technique with a high level. Therefore, sufficient
characteristics can not be obtained currently.
[0011] As described above, though development of a novel magnetic
sensor utilizing a resonant magneto-resistance effect has been gone
ahead in order to solve the problem about the magnetic white noise
adversely affecting the high density magnetic recording, sufficient
characteristics for solving the problem have not been achieved
yet.
SUMMARY OF THE INVENTION
[0012] The present invention has been made in view of the above
circumstances, and an object thereof is to provide a resonant
magneto-resistance effect element which can suppress magnetic white
noises as far as possible.
[0013] A resonant magneto-resistance effect element according to a
first aspect of the present invention includes: a first magnetic
film whose magnetization direction is substantially parallel to a
film plane; a second magnetic film whose magnetization direction is
substantially perpendicular to the film plane, and a first
non-magnetic film which is provided between the first and second
magnetic films.
[0014] A resonant magneto-resistance effect element according to a
second aspect of the present invention includes: a first and second
magnetic films whose magnetization directions are substantially
parallel to a film plane, and a stacked layer, the stacked layer
being provided between the first and second magnetic films, the
stacked layer comprising a plurality of sets of a third magnetic
film whose magnetization direction is substantially perpendicular
to the film plane and a non-magnetic film.
[0015] A magnetic head according to a third aspect of the present
invention includes: a resonant magneto-resistance effect element
above-mentioned as a reproducing element.
[0016] A magnetic recording and reproducing apparatus according to
a fourth aspect of the present invention includes: a magnetic head
above-mentioned.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a sectional view showing a resonant
magneto-resistance effect element according to a first embodiment
of the present invention;
[0018] FIG. 2A is a graph illustratively showing a power spectrum
S.sub.<mt> of thermal fluctuation in a ferromagnetic
layer;
[0019] FIG. 2B is a diagram showing a magnetization component in a
film plane of the ferromagnetic layer;
[0020] FIG. 3 is a graph showing a device characteristic of the
resonant magneto-resistance effect element according to the first
embodiment;
[0021] FIGS. 4A and 4B are sectional views showing a resonant
magneto-resistance effect element according to a second embodiment
of the invention;
[0022] FIG. 5 is a sectional view showing a resonant
magneto-resistance effect element according to Example 1 of the
invention;
[0023] FIG. 6 is a graph showing such a fact that a resistance
value of the resonant magneto-resistance effect element according
to Example 1 depends on an external magnetic field;
[0024] FIG. 7 is a sectional view showing a resonant
magneto-resistance effect element according to Example 2 of the
invention;
[0025] FIG. 8 is a sectional view showing a resonant
magneto-resistance effect element according to modification of the
first embodiment;
[0026] FIG. 9 is a sectional view showing a resonant
magneto-resistance effect element according to a third embodiment
of the invention;
[0027] FIG. 10 is a sectional view showing a resonant
magneto-resistance effect element according to modification of the
third embodiment;
[0028] FIG. 11 is a perspective view of a principal portion showing
a schematic constitution of a magnetic recording and reproducing
apparatus; and
[0029] FIG. 12 is an enlarged perspective view of a magnetic head
assembly positioned ahead of an actuator arm, viewed from a disk
side.
DESCRIPTION OF THE EMBODIMENTS
[0030] A resonant magneto-resistance effect element, which is a
kind of a magnetic oscillator, will be first explained prior to
explanation about embodiments of the present invention. The
resonant magneto-resistance effect element is configured to utilize
thermal fluctuation of magnetization in soft magnetic material
positively and it is characterized by injecting spin fluctuation of
conduction electrons caused by thermal fluctuation of magnetization
in ferromagnetic material into magnetic material. The spin
fluctuation of the conduction electrons injected acts on the
magnetic material as an effective high frequency magnetic field via
interaction such as sd exchange interaction to induce magnetic
resonance in the magnetic material. When an external magnetic field
varies and magnetization fluctuation of ferromagnetic material
changes, intensity of magnetic resonance induced in the magnetic
material also changes, but the change is detected as change in
effective electric resistance of the magnetic material. According
to such a principle, a device resistance change in a range of
several tens % to several hundreds % can be obtained in response to
change in external magnetic field of about 10 Oe (oersted), so that
the resonant magneto-resistance effect element functions as a fine
magnetic sensor with a high sensitivity.
[0031] Embodiments of the present invention will be explained below
in detail with reference to the drawings. In the following
explanation, same or common constituents or parts are denoted by
same reference numerals and double explanation thereof is omitted.
Respective figures are illustrative ones, where a shape, a size, a
ratio, or the like different from ones in an actual apparatus may
be included. Therefore, proper modifications can be adopted in
manufacture of an actual device or the like, referring to the
following explanation and known techniques.
First Embodiment
[0032] A resonant magneto-resistance effect element according to a
first embodiment of the present invention is shown in FIG. 1. FIG.
1 is a sectional view showing the resonant magneto-resistance
effect element according to the embodiment. The resonant
magneto-resistance effect element according to the embodiment is
provided on a substrate 1 with a lower electrode 3 also serving as
a magnetic shield, a ferromagnetic layer 5 which is provided on the
lower electrode 3 and whose magnetization direction is
substantially perpendicular to a film plane, a non-magnetic layer 7
which is provided on the ferromagnetic layer 5, a ferromagnetic
layer 9 which is provided on the non-magnetic layer 7 and whose
magnetization direction is substantially perpendicular to the film
plane, and an upper layer 11 which is provided on the ferromagnetic
layer 9 and also serves as a magnetic shield. The ferromagnetic
layer 5, the non-magnetic layer 7, and the ferromagnetic layer 9
have the same plan shape to constitute one stacked film 4. A
magnetization direction of the ferromagnetic layer 5 is
substantially perpendicular to the film plane, namely, its easy
axis of magnetization is substantially perpendicular to the film
plane, while a magnetization direction of the ferromagnetic layer 9
is substantially parallel to the film plane, namely, its easy axis
of magnetization is substantially parallel to the film plane. In
the present specification, "substantially parallel" means a state
including an inclined state at an angle of inclination of -15
degree to +15 degree from the perfectly parallel state, and
"substantially perpendicular" means a state including an inclined
state at an angle of inclination of -15 degree to +15 degree from
the perfectly perpendicular state.
[0033] Since the lower electrode 3 and the upper electrode 11 also
serves as wiring, they extend in a lateral direction on a drawing
sheet for FIG. 1 and their ends are connected to a current supply
circuit for controlling current flowing in the element, a reading
(sensing) circuit, and the like. Incidentally, the lower electrode
3 and the upper electrode 11 also serves as wiring and magnetic
shield, but the wiring and/or magnetic shield may be provided
independently from the lower electrode and/or the upper electrode.
In this case, the magnetic shield or the wiring may be formed
within a film plane (a plane extending in left and right directions
on the sheet plane in a sectional view shown in FIG. 1) parallel to
the film plane of the lower electrode 3, the upper electrode 11,
and the ferromagnetic layer 9.
[0034] The resonant magneto-resistance effect element according to
the embodiment positively utilizes thermal fluctuation of
magnetization inevitable in ferromagnetic material. That is, spin
fluctuation of conduction electrons due to thermal fluctuation of
magnetization of the ferromagnetic layer 9 is injected into the
ferromagnetic layer 5 via the non-magnetic layer 7. The spin
fluctuation of the conduction electrons injected acts as an
effective high frequency magnetic field applying spin torque in the
ferromagnetic layer 5 via sd exchange interaction to induce
magnetic resonance on the ferromagnetic layer 5 at a threshold
current I.sub.th or more. When fluctuation spectrum of
magnetization of the ferromagnetic layer 9 varies according to
change of external magnetic field, intensity of magnetic resonance
induced in the ferromagnetic layer 5 changes, and the change in
intensity is detected as an effective electric resistance in the
resonant magnetic resistance effect element. According to such a
principle, a device resistance change in a range of several
hundreds % to several thousands % is obtained in response to change
in external magnetic field of several tens Oe.
[0035] Thus, the resonant magneto-resistance effect element
according to the embodiment functions as a fine magnetic sensor
with a high sensitivity. Since the resonant magneto-resistance
effect element according to the embodiment utilizes thermal
fluctuations of magnetizations of the ferromagnetic layer 9 and the
ferromagnetic layer 5, as described later, it has a feature that a
sensitivity and an SN ratio hardly decrease, even if the joined
area of the device (joined areas among the ferromagnetic layer 5,
the non-magnetic layer 7, and the ferromagnetic layer 9) decreases.
Therefore, when the resonant magneto-resistance effect element
according to the embodiment is applied to a magnetic head for
magnetic information reproduction, the magnetic head can
accommodate a ultra-high density recording where recording density
exceeds several hundreds Gbpsi to 1 Tbpsi.
[0036] In the embodiment, the ferromagnetic layer 9 is set to have
a flat area of about 30.times.30 nm.sup.2 and a thickness of about
1 nm, assuming a reading magnetic head accommodating 1
Tb/inch.sup.2 as one example of a ferromagnetic layer.
Incidentally, flat areas of the ferromagnetic layer 5 and the
non-magnetic layer 7 may be set to the same as that of the
ferromagnetic layer 9. That is, the joined area of the resonant
magneto-resistance effect element according to the embodiment is
about 30.times.30 nm.sup.2. In the embodiment, the stacked film 4
constituted of the ferromagnetic layer 5, the non-magnetic layer 7,
and the ferromagnetic layer 9 is formed in a column shape with a
square bottom, and four side faces of the column are surrounded by
non-magnetic insulating material (not shown). The shape of the
stacked film 4 may be properly modified in another shape such as a
circular cylinder with a circular bottom face, a triangle pole with
a triangular bottom face, or a polygon pole with a polygonal bottom
face.
[0037] As material for the ferromagnetic layer 9, Fe, Co, Ni, or
alloy thereof, Heusler's alloy such as Cu.sub.2MnAl, Ni.sub.2MnIn,
Cu.sub.2MnIn, Cu.sub.2MnSn, Ni.sub.2MnSn, or CO.sub.2MnSn,
electrically conductive magnetic compound such as Fe.sub.3O.sub.4,
or LaSrMnO.sub.2, can be used. As described with equations later,
however, since magnitude of thermal fluctuation of magnetization is
inversely proportional to a volume of a magnetic material and
square root of magnetization, it is desirable to use a
ferromagnetic material with magnetization of 1000 G or less and a
thickness of 0.1 nm or more and 3 nm or less. As material for the
non-magnetic layer 7, a noble metal such as Al, Pt, Au, Ag, or Cu,
non-magnetic transition metal such as Cr, Ru, or Pd, or the like
can be used. A thickness of the non-magnetic layer 7 may be set to
a range of about 1 nm to several tens nm, for example, to about 5
nm. The non-magnetic layer 7 serves to cut off an exchange
interaction acting between the ferromagnetic layer 9 and the
ferromagnetic layer 5 and simultaneously transport spin fluctuation
of conduction electrons generated in the ferromagnetic layer 9 to
the ferromagnetic layer 5.
[0038] As material for the ferromagnetic layer 5, for example,
hexagonal Co or the like can be used. When Co is used, a
perpendicular anisotropy magnetic field (perpendicular anisotropy
constant) thereof can be changed by controlling a kind or a film
thickness of a basic metal. In order that the ferromagnetic layer 9
resonates magnetic fluctuation of several GHz to several tens GHz,
it is desirable that intensity of a perpendicular anisotropy
magnetic field is 1 kOe or more. As the material for the
ferromagnetic layer 5, CoCr base alloy such as CoCrTa, CoCrTaPt, or
CoCrTaNb, a Co multi-layer film such as Co/Pd, Co/Pt, or
Co--Cr--Ta/Pd, CoCrPt base alloy or FePt base alloy, or SmCo base
metal or TbFeCo alloy including earth rare metal may be utilized
instead of Co. A thickness of the ferromagnetic layer 5 is
preferably 0.1 nm or more and 3 nm or less because of the reason
described later.
[0039] As material for the lower electrode 3 and the upper
electrode 11, metal such as Al, Cu, Au, Ag, or Ru can be used.
Especially, when Co is used as material for the ferromagnetic layer
5, it is preferable that Ru is used. When the lower electrode 3 and
the upper electrode 11 also serve as magnetic shields, a stacked
film including a film made from the above metal and a known shield
material film such as NiFe is formed. Incidentally, as material for
the substrate 1, non-magnetic insulating substrate material
suitable for forming a magnetic element such as silicon, SiO.sub.2,
Al.sub.2O.sub.3, TiC is used.
[0040] Next, thermal fluctuation of magnetization of the
ferromagnetic layer 9 will be explained. FIG. 2A is a graph
illustratively showing power spectrum S.sub.<mt> of thermal
fluctuation of magnetization of the ferromagnetic layer 9. FIG. 2B
is a diagram showing a magnetization component within film plane of
the ferromagnetic layer 9, where Ms denotes saturated magnetization
of the ferromagnetic layer 9 and Mt denotes a lateral component
orthogonal to the saturated magnetization of the ferromagnetic
layer 9. The "m.sub.t" which is a ratio of Mt to the saturated
magnetization Ms represents a radian of thermal fluctuation of
magnetization of the ferromagnetic layer 9. Thermal fluctuation of
magnetization of the ferromagnetic layer 9 at a temperature T
(Kelvin) is approximately expressed as the following Equation (1)
using a power spectrum S.sub.<mt> of mean square
<m.sub.t.sup.2> of m.sub.t (=M.sub.t/.sub.Ms). < m t 2
>= .intg. S < m t > .times. d f S < m t > = 2
.times. kT .pi. .times. .times. f .times. .chi. F .times. .times. M
'' M s 2 .times. V F .times. .times. M .chi. F .times. .times. M ''
.apprxeq. ( .gamma. .times. / .times. 2 .times. .pi. ) .times. ( 4
.times. .pi. .times. .times. M s ) .times. ( .alpha. .times.
.times. f ) .times. f 2 + ( .gamma. .times. / .times. 2 .times.
.pi. ) 2 .times. ( 4 .times. .pi. .times. .times. M s ) 2 ( f F
.times. .times. M 2 - f 2 ) + ( .gamma. .times. / .times. 2 .times.
.pi. ) 2 .times. ( 4 .times. .pi. .times. .times. M s ) 2 .times. (
.alpha. .times. .times. f ) 2 f F .times. .times. M = ( .gamma.
.times. / .times. 2 .times. .pi. ) .times. 4 .times. .pi. .times.
.times. M s .function. ( H + H K ) } ( 1 ) ##EQU1##
[0041] In Equation (1), .sub..chi.FM'' represents an imaginary part
of a high frequency susceptibility of the ferromagnetic layer 9,
V.sub.FM represents a volume of the ferromagnetic layer 9, .alpha.
represents Gilbert's damping coefficient, .gamma.
(=19.times.10.sup.6 rad/sOe) represents a gyro magnetic ratio,
f.sub.FM represents a resonant frequency of the ferromagnetic layer
9, H represents external magnetic field received by the
ferromagnetic layer 9, and H.sub.K represents anisotropy magnetic
field of the ferromagnetic layer 9. It will be understood from
Equation (1) and FIG. 2A that the high frequency susceptibility
.sub..chi.FM'' increases and the power spectrum S.sub.<mt> of
the magnetization fluctuation of the ferromagnetic layer 9 also
increases when the external magnetic field frequency f is in the
vicinity of the resonant frequency f.sub.FM. A value at a peak
frequency f.sub.FM of S.sub.<mt> is in inverse proportion to
the volume V.sub.FM and the saturated magnetization M.sub.s. When
permalloy (saturated magnetization M.sub.s=800 Gauss) with the
volume V.sub.FM of about 30.times.30.times.1 nm.sup.3 is used as
the ferromagnetic layer 9, adopting the resonant frequency
f.sub.0=10 GHz and Gilbert's damping coefficient .alpha.=0.01, the
thermal fluctuation <m.sub.t.sup.2>.sup.1/2 of magnetization
of the ferromagnetic layer 9 corresponding to the external magnetic
field frequency f=f.sub.FM and a bandwidth .DELTA.f is expressed by
the following Equation (2). {square root over
(<m.sub.t.sup.2>)}= {square root over
(S.sub.<m.sub.t.sub.>(f.sub.0).DELTA.f)}=2.4
radian=14.degree. (2)
[0042] Here, the bandwidth .DELTA.f is a full half bandwidth of a
resonant line of the ferromagnetic layer 9, and it is expressed as
follows. .DELTA.f.apprxeq.(.gamma./2.pi.)(4.pi.M.sub.S).alpha.
Here, .DELTA.f=5.6.times.10.sup.8 Hz is obtained.
[0043] Spin fluctuation due to thermal fluctuation of magnetization
of the ferromagnetic layer 9 occurs in conduction electrons in the
ferromagnetic layer 9 having such magnetization fluctuation. The
conduction electrons having the spin fluctuation are transported by
current flowing into the stacked film 4 constituted of the
ferromagnetic layer 9/the non-magnetic layer 7/the ferromagnetic
layer 5 to pass through the non-magnetic layer 7 to be injected
into the ferromagnetic layer 5. The spin fluctuation of the
conduction electrons injected applies a high frequency torque
(effective high frequency magnetic field) to the ferromagnetic
layer 5 via sd exchange interaction or the like to induce magnetic
resonance in the ferromagnetic layer 5. The torque applied to the
magnetic material by the spin s is expressed by the following
equation (3). N = M .times. [ h 1 .function. ( M ^ .times. s ^ ) +
h 2 .times. s ^ ] = M .times. h ( 3 ) ##EQU2##
[0044] In the Equation (3), a thick letter M denotes a
magnetization vector of the ferromagnetic layer 5, and M hat and s
hat denote magnetization vector M and unit vector in a direction of
the spin s. Equation h=(h.sub.1.sup.2+h.sub.2.sup.2).sup.1/2
represents magnitude of an effective magnetic field. The h depends
on current density j, spin polarizability p of current, thickness d
of the ferromagnetic layer 5, and magnetization which is magnitude
M of a magnetization vector. The thinner the thickness d and the
smaller the magnetization M, the larger h becomes. Therefore, it is
desirable that the thickness d is 0.1 nm or more and 3 nm or less
and the magnetization M is 1000 G or less. The spin polarizability
p of current is about 0.8, and h is about 10.sup.-4j (Oe) under
current density of j (A/cm.sup.2) under conditions of d=1 nm and
M=1000 G. From Equation (3), the power spectrum of a high frequency
magnetic field produced by the spin fluctuation
<m.sub.t.sup.2> becomes G(f)=h.sup.2S.sub.<mt>.
[0045] The imaginary portion of the susceptibility of the
ferromagnetic layer 5 is expressed by the following Equation (4).
.chi. PFM '' = ( .gamma. 2 .times. .pi. ) .times. ( 4 .times. .pi.
.times. .times. M ) .times. ( .alpha. ' .times. .times. f ) .times.
( f 0 2 + f 2 ) ( f 0 2 - f 2 ) 2 + 4 .times. ( .alpha. ' .times.
.times. ff 0 ) 2 f 0 = ( .gamma. 2 .times. .pi. ) .times. ( H A - 4
.times. .pi. .times. .times. M ) ( 4 ) ##EQU3##
[0046] In Equation (4), f.sub.0 represents a resonant frequency of
the ferromagnetic layer 5, H.sub.A represents anisotropy magnetic
field, and .alpha.' represents Gilbert's damping coefficient of the
ferromagnetic layer 5. When Co of H.sub.A-4.pi.M=3500 (Oe) is used
as material for the ferromagnetic layer 5, f.sub.0.apprxeq.10 GHz
is obtained.
[0047] When thermal fluctuation of magnetization of the
ferromagnetic layer 5, a direction of the magnetization being
perpendicular to a film plane like an ordinary ferromagnetic
resonance, is vanishingly small, if resonant frequencies of the
ferromagnetic layer 5 and the ferromagnetic layer 9 are equal to
each other, the above-described high frequency magnetic field
induces magnetic resonance in the ferromagnetic layer 5 regardless
of intensity thereof. In the current element, however, thermal
fluctuation of the ferromagnetic layer 5 is large and is comparable
in magnitude to that of the ferromagnetic layer 9. There is not
correlation in phase between the thermal fluctuations of
magnetizations of the ferromagnetic layer 9 and the ferromagnetic
layer 5, and a correlation time in phase is about
1/(.alpha.f.sub.FM)=1/(.alpha.'f.sub.PFM). Therefore, when the high
frequency magnetic field is small, energy absorption does not
occur, taking time averaging. However, since the high frequency
magnetic field increases in proportion to increase in current,
motion of magnetization M of the ferromagnetic layer 5 is
controlled by the high frequency magnetic field and its phase
eventually becomes the same phase as the high frequency magnetic
field, where energy absorption occurs. When the thickness sizes of
the ferromagnetic layer 9 and the ferromagnetic layer 5 are equal
to each other in case of h=h.sub.0j, a threshold current density
where the resonant absorption occurs is expressed by Equation (5).
j th = M F .times. .times. M h 0 .times. .chi. F .times. .times. M
'' .function. ( f F .times. .times. M ) .times. .chi. PFM ''
.function. ( f PFM ) ( 5 ) ##EQU4##
[0048] In case of p=0.8, M=1000 G, and d=1 nm, estimation is made
as h.sub.0=1.4.times.10.sup.-4 Oe/(A/cm.sup.2), so that a critical
current density j.sub.th becomes 2.8.times.10.sup.4 A/cm.sup.2.
Since h.sub.0 is inversely proportional to a film thickness of a
magnetic layer, resonant absorption can be caused by a low
threshold current density corresponding to reduction in film
thickness. Since h.sub.0 depends on the film thickness, the
threshold current depends on the thicknesses of the ferromagnetic
layer 9 and the ferromagnetic layer 5, but it does not depend on
the device area, as understood from Equation (5).
[0049] Since the fluctuation of magnetization of the ferromagnetic
layer 5 is in phase with that of the ferromagnetic layer 9 in phase
under such a condition that the current density j is equal to or
more than the critical current density j.sub.th, the fluctuation of
magnetization of the ferromagnetic layer 9 further increases due to
the high frequency torque. That is, a feed forward loop is formed
between motions of magnetization of the ferromagnetic layer 5 and
magnetization of the ferromagnetic layer 9 in case of
j>j.sub.th, so that amplitude of the fluctuation is increased
until it become approximately equal to the magnitude M of
magnetization.
[0050] A resonant absorption power in the ferromagnetic layer 5
under such a condition that current density j is equal to or more
than the critical current density j.sub.th can be evaluated by
Equation (6). W PFM = .times. d E d t = .times. - M PFM .function.
( t ) .times. d h PFM hf d t .times. V PFM .apprxeq. .times. 1 2
.times. ( 2 .times. .pi. .times. .times. f PFM ) .times. MhV PFM (
6 ) ##EQU5##
[0051] When M=1000 G, V.sub.PFM=30.times.30.times.1 nm.sup.3, and
h=1.4.times.10.sup.-4.times.jOe are assigned, absorption in
j=j.sub.th=2.8.times.10.sup.4 A/cm.sup.2 becomes
W.sub.PFM=1.1.times.10.sup.-4 erg/s=1.1.times.10.sup.-11 watts.
Taking in such an effect that a high frequency torque according to
fluctuation of magnetization in the ferromagnetic layer 5 acting on
the ferromagnetic layer 9 and adding absorption equal in amount to
that of the ferromagnetic layer 9 thereto, W=2.2.times.10.sup.-11
watts is obtained as absorption W of the whole element. A element
voltage and a device resistance become .DELTA.V=W/Ith=8
8.times.10.sup.-4 V and .DELTA.R=.DELTA.V/I.sub.th=350 .OMEGA. in
case of I.apprxeq.I.sub.th=j.sub.thA=2.5.times.10.sup.-7 A because
of a flat area of the element A=30.times.30 nm.sup.2. Since the
absorption power in I>I.sub.th increases in proportion to
current as W=0.88.times.10.sup.-5 I, .DELTA.V remains constant.
When an interference resistance is 1.0.times.10.sup.-11
.OMEGA.cm.sup.2 and a mean bulk resistance is 5.times.10.sup.-6
.OMEGA.cm, a resistance R.sub.0 at a time of non-resonance is about
5 .OMEGA., so that .DELTA.R(I.sub.th)/R.sub.0.about.70 (7000%) is
obtained.
[0052] A peak frequency f.sub.FM of the power spectrum fluctuation
of magnetization of a fine magnetic material changes due to change
.delta.H in external magnetic field from Equation (1) to the
following Equation (7), but a resonant frequency of a
perpendicularly magnetized film remains H<<H.sub.A=3500 Oe
and it hardly changes. .delta. .times. .times. f F .times. .times.
M .apprxeq. 1 2 .times. ( .gamma. .times. / .times. 2 .times. .pi.
) 2 .times. 4 .times. .pi. .times. .times. M s f F .times. .times.
M .times. .delta. .times. .times. H ( 7 ) ##EQU6##
[0053] That is, when the element is applied with external magnetic
field, it changes from its resonant state to its non-resonant
state, and an output voltage .DELTA.V thereof decreases.
[0054] A characteristic of the resonant magneto-resistance effect
element according to the embodiment is shown in FIG. 3. When
external magnetic field changes and the resonant magneto-resistance
effect element changes from the resonant state to the non-resonant
state, a threshold current changes, as shown with a dotted line,
and an output voltage changes largely, as shown by arrow.
[0055] Though the resonant magneto-resistance effect element
according to the embodiment utilizes thermal fluctuation of
magnetization, a characteristic of the fluctuation depends on a
relative magnitude between thermal fluctuation of the ferromagnetic
layer 9 and thermal fluctuation of the ferromagnetic layer 5
perpendicular to a film plane. Therefore, the element functions
without depending on a element size as far as each film has a
single magnetic domain. However, the smaller the size of the
magnetic material, the more easily a magnetic layer with a single
magnetic domain structure can be obtained. Accordingly, it is
desirable that the element has a element size of 1 .mu.m.sup.2 or
less. Since a temperature dependency of the characteristic is small
in a temperature range in which a cut-off frequency kT/h (k:
Boltzmann constant, T: temperature, h: Planck's constant) of
thermal fluctuation is sufficiently high as compared with the
resonant frequency, the resonant magneto-resistance effect element
generally operates even in a low temperature range where the
thermal fluctuation becomes small.
[0056] Next, electric and magnetic noises in the resonant
magneto-resistance effect element according to the embodiment will
be explained. The resonant magneto-resistance effect element shown
in FIG. 1 includes many interfaces between ferromagnetic materials
and non-magnetic materials. However, all voltages V.sub.0 applied
on the element is several mV or so, a relationship of
eV.sub.0<<kT is obtained, and thermal noise v.sub.el
represented by the following Equation (8) becomes dominant as the
electric noise. v.sub.el= {square root over (4kTR.sub.0B)} (8)
[0057] Here, B denotes a bandwidth. Magnetic while noise in the
device becomes 0.1 .mu.V or less and it can be neglected. In a case
of B=300 MHz, R.sub.0=5 .OMEGA., and .DELTA.V=0.1 mV, the SN ratio
(SNR) is represented as SNR=.DELTA.V/v.sub.el, and SNR=20 (26 dB)
is obtained.
[0058] As explained above, according to the embodiment, the
magnetic white noise can be suppressed as far as possible.
[0059] Incidentally, when the resonant magneto-resistance effect
element according to the embodiment is used as a reproducing device
of a magnetic head, as shown in FIG. 8, it is necessary to provide
parallel magnetizing bias films 20 at side portions of the stacked
film 4 constituted of the ferromagnetic layer 5, the non-magnetic
layer 7, and the ferromagnetic layer 9.
Second Embodiment
[0060] The first embodiment is directed to the resonant
magneto-resistance effect element where the ferromagnetic layer 9
and the ferromagnetic layer 5 whose magnetization direction is
substantially perpendicular to a film plane are each provided as a
single layer, and the stacked film 4 formed via the non-magnetic
layer is provided as a single piece.
[0061] A resonant magneto-resistance effect element according to
the second embodiment has a plurality of the stacked films 4
according to the first embodiment which have been stacked. By
stacking a plurality of the stacked films according to the first
embodiment, spin fluctuation generated by the ferromagnetic layers
whose magnetization directions are substantially parallel to the
film planes sequentially induce resonances in the ferromagnetic
layers whose magnetization directions are substantially
perpendicular to the film plane, so that a further larger output
voltage .DELTA.V can be obtained. As shown in FIG. 4A, it is
preferable that the ferromagnetic layers 5 whose magnetization
directions are substantially perpendicular to the film plane and
the ferromagnetic layers 9 whose magnetization directions are
substantially parallel to the film plane are alternately stacked on
one another via the non-magnetic layers 7. As shown in FIG. 4B,
however, even by employing such a constitution that a plurality of
ferromagnetic layers 5 whose magnetization directions are
substantially perpendicular to a film plane are stacked between two
ferromagnetic layers 9 whose magnetization directions are
substantially parallel to the film plane via non-magnetic layers 7,
an output voltage can be increased as compared with that in the
first embodiment.
[0062] The embodiment can suppress magnetic white noise as far as
possible like the first embodiment.
Third Embodiment
[0063] Next, a resonant magneto-resistance effect element according
to a third embodiment of the invention will be explained with
reference to FIG. 9. A resonant magneto-resistance effect element
of the embodiment has a constitution that a perpendicularly
magnetizing bias film 22 is provided between the ferromagnetic
layer 9 and the upper electrode 11 in the resonant
magneto-resistance effect element according to the first or second
embodiment.
[0064] In the first and second embodiments, change of external
magnetic field applied within a plane of the ferromagnetic layer 5
is detected as change of a resonant frequency of the ferromagnetic
layer 5 shown by Equation (7), but it is detected as change of a
resonant frequency of the ferromagnetic layer 9 in the third
embodiment. The smaller a difference between a shape anisotropy
magnetic field 4.pi.M and a crystalline anisotropy magnetic field
H.sub.A perpendicular to the film plane, the larger change of a
magnetic field frequency of a resonant frequency of the
ferromagnetic layer 5 whose magnetization direction is
substantially perpendicular to the film plane becomes. Therefore,
when the resonant magneto-resistance effect element of the
embodiment is used as a sensor, it is desirable that a relationship
of 0 Oe.ltoreq.(H.sub.A-4.pi.M).ltoreq.500 Oe is satisfied.
Regarding the ferromagnetic layer 9, a difference between a shape
anisotropy magnetic field 4.pi.Ms and a crystalline anisotropy
magnetic field H.sub.A1 perpendicular to the film plane is made
small, so that magnetic field change in a direction perpendicular
to the film plane can be detected. In order to obtain a high
sensitivity, it is desirable that a relationship of 0
Oe.ltoreq.(4.pi.M.sub.S-H.sub.A1).ltoreq.500 Oe is satisfied. In
that case, a further high sensitivity can be obtained by causing
the resonant magneto-resistance effect element of the embodiment to
function as a sensor in such a state that a direction of
magnetization of the magnetic layer 9 is directed in a direction
pependicular to the film plane.
[0065] In the embodiment, the perpendicularly magnetizing bias film
22 is provided between the ferromagnetic layer 9 and the upper
electrode 11, but perpendicularly magnetizing bias films 24 may be
provided at side portions of the stacked film 4 constituted of the
ferromagnetic layer 5, the non-magnetic layer 7, and the
ferromagnetic layer 9, as shown in FIG. 10.
Fourth Embodiment
[0066] Next, a magnetic recording and reproducing apparatus
according to a fourth embodiment of the invention will be
explained. A magnetic head provided with the resonant
magneto-resistance effect element according to either of the first
to third embodiments explained with reference to FIGS. 1 to 10 as a
reproducing device can be assembled to a magnetic head assembly of
a recording and reproducing integral type to be mounted on a
magnetic recording and reproducing apparatus, for example.
[0067] FIG. 11 is a perspective view of a main portion illustrating
a schematic constitution of such a magnetic recording and
reproducing apparatus. That is, a magnetic recording and
reproducing apparatus 150 according to the embodiment is an
apparatus of a type using a rotary actuator. In FIG. 11, a magnetic
disk 200 for longitudinal recording or perpendicular recording is
attached to a spindle 152 and is rotated in a direction of arrow A
by a motor (not shown) responding to a control signal from a
driving device control unit (not shown). The magnetic disk 200 has
a recording layer for longitudinal recording or perpendicular
recording. A head slider 153 performing recording and reproducing
of information stored in the magnetic disk 200 is attached to a
distal end of a suspension 154 of a thin film type. Here, the head
slider 153 is provided in the vicinity of its distal end with the
resonant magneto-resistance effect element according to either of
the above embodiments as a reproducing device.
[0068] When the magnetic disk 200 is rotated, a medium running face
(ABS) of the head slider 153 is held with a predetermined floating
amount from a surface of the magnetic disk 200.
[0069] The suspension 154 is connected to one end of an actuator
arm 155 having a bobbin-portion retaining a driving coil (not
shown) and the like. A voice coil motor 156 which is a kind of a
linear motor is provided on the other end of the actuator arm 155.
The voice coil motor 156 is constituted of the driving coil (not
shown) wound on the bobbin portion of the actuator arm 155, and a
permanent magnet and an opposing yoke arranged in an opposing
manner so as to sandwich the coil.
[0070] The actuator arm 155 is held by ball bearings (not shown)
provided on upper and lower two portions on a fixing shaft 157, and
it can be rotationally slid by the voice coil motor 156.
[0071] FIG. 12 is an enlarged perspective view of a magnetic head
assembly including the actuator arm 155, viewed from the disk side.
That is, a magnetic head assembly 160 has the actuator arm 155
having the bobbin portion holding the driving coil, and the
suspension 154 is connected to one end of the actuator arm 155.
[0072] The head slider 153 provided with either of the magnetic
heads described above is attached to a distal end of the suspension
154. A combination with a reproducing head may be adopted. The
suspension 154 has lead wires 164 for writing and reading a signal,
and respective electrodes of the magnetic head assembled in the
head slider 153 are electrically connected to the lead wires 164.
In FIG. 12, reference numeral 165 denotes an electrode pad for the
magnetic head assembly 160.
[0073] Next, Examples of the invention will be explained.
EXAMPLE 1
[0074] Next, a resonant magneto-resistance effect element according
to Example 1 of the invention is shown in FIG. 5. FIG. 5 is a
sectional view showing this Example. A resonant magneto-resistance
effect element of Example 1 was manufactured in the following
manner.
[0075] A stacked film was formed on a sapphire substrate 1 using
sputter film forming and an electron beam lithography. The stacked
film had a non-magnetic layer 3 made from Ru, a ferromagnetic layer
5 made from Co, a non-magnetic layer 7 made from Cu, a
ferromagnetic layer 9 made from Fe, a non-magnetic layer 13 made
from Cu, a non-magnetic layer 15 made from Ta, and a non-magnetic
layer 11 made from Cu which were stacked in this order from the
side of the substrate 1.
[0076] The respective layers were set in thickness such that the Ru
layer 3 was about 100 nm, the Co layer 5 was about 1 nm, the Cu
layer 7 was about 10 nm, the Fe layer 9 was about 1 nm, the Cu
layer 13 was about 10 nm, the Ta layer 15 was about 20 nm, and the
Cu layer 11 was about 100 nm. Respective joined areas among the
ferromagnetic Co layer 5 and Fe layer 9, and the non-magnetic Cu
layers 7 and 13 were set to be about 100.times.100 nm.sup.2, and
SiO.sub.2 was used as interlayer insulating films.
[0077] The Co layer 5 was a ferromagnetic layer whose magnetization
direction was substantially perpendicular to a film plane, and
magnetic uniaxial anisotropy was applied to the Fe layer 9 which
was a ferromagnetic layer whose magnetization direction was
substantially parallel to a film plane by forming the Fe layer 9
while applying magnetic field of about 1000 Oe in a direction
parallel to the film plane. Magnetic characteristics of the Co
layer 5 and the Fe layer 9 were examined by performing magnetic
measurement and a ferromagnetic resonance measurement on a stacked
film constituted of a Ru layer 3/a Co layer 5/a Cu layer 7 and a
stacked film constituted of a Cu layer 7/an Fe layer 9/a Cu layer
13 manufactured under the same conditions as those in device
manufacturing. Magnetization of the Co layer 5 was 920 G, magnitude
of anisotropy magnetic field perpendicular to the film plane was
3500 Oe, magnetization of the Fe layer 9 was 1050 G, and magnitude
of anisotropy magnetic field parallel to the film plane was 410
Oe.
[0078] A resonant frequency of the Co layer 5 was 9.8 GHz, and a
resonant frequency of the Fe layer 9 was set to 9.55 GHz by
adjusting bias magnetic field within the film plane. A resistance
R.sub.0 was 1 .OMEGA., a threshold current was 1.4 .mu.A, and a
resonant voltage .DELTA.V was 0.12 mV at an OFF time, while an
effective resistance at ON time was (.DELTA.V/I.sub.th)+R.sub.0=87
.OMEGA.. When external magnetic field was applied in such a state
that current of 2 .mu.A was being flowed in the resonant
magneto-resistance effect element of Example 1, the resonant
frequency of the Fe layer 9 changed, so that .DELTA.V was changed
as shown in FIG. 6. Thus, it was understood that the resonant
magneto-resistance effect element of Example 1 functioned as a
magnetic sensor.
EXAMPLE 2
[0079] Next, a resonant magneto-resistance effect element according
to Example 2 of the invention is shown in FIG. 7. FIG. 7 is a
sectional view showing a resonant magneto-resistance effect element
of the Example 2. The resonant magneto-resistance effect element of
Example 2 had a constitution that two stacked structures, each
being constituted of the ferromagnetic layer 5, the non-magnetic
layer 7, and the ferromagnetic layer 9 according to Example 1, were
stacked one on another. The resonant magneto-resistance effect
element of Example 2 was manufactured as follows:
[0080] A stacked film was formed on a sapphire substrate 1 using
sputter film forming and an electron beam lithography like the case
of Example 1. The stacked film had a non-magnetic layer 3 made from
Ru, a ferromagnetic layer 5.sub.1 made from Co, a non-magnetic
layer 7.sub.1 made from Cu, a ferromagnetic layer 9.sub.1 made from
NiFe, a non-magnetic layer 7 made from Cu, a ferromagnetic layer
7.sub.2 made from Cu, a ferromagnetic layer 9.sub.2 made from NiFe,
a non-magnetic layer 13 made from Cu, a non-magnetic layer 15 made
from Ta, and a non-magnetic layer 11 made from Cu which were
stacked in this order from the substrate 1.
[0081] Respective layers were set in thickness such that the Ru
layer 3 was about 100 nm, the Co layers 5.sub.1 and 5.sub.2 were
about 1 nm, the Cu layers 7.sub.1, 7, and 7.sub.2 were about 5 nm,
the NiFe layers 9.sub.1 and 9.sub.2 were about 1 nm, the Cu layer
13 was about 10 nm, the Ta layer 15 was about 20 nm, and the Cu
layer 11 was about 100 nm. The device size was set to about
100.times.100 nm.sup.2 and SiO.sub.2 was used as interlayer
insulating films.
[0082] The Co layers 5.sub.1 and 5.sub.2 were magnetic layers whose
magnetization directions were substantially perpendicular to the
film plane, and magnetic uniaxial anisotropy was applied to the
NiFe layers 9.sub.1 and 9.sub.2 which were magnetic layers whose
magnetization directions were substantially parallel to the film
plane by forming the NiFe films while applying magnetic field of
about 1000 Oe in parallel to the film plane. Magnetic
characteristics of the Co layers 5.sub.1 and 5.sub.2 and the NiFe
layers 9.sub.1 and 9.sub.2 were examined by performing
magnetization measurement and ferromagnetic resonance measurement
on a stacked film of a Ru layer 3/a Co layer 5.sub.1/a Cu layer
7.sub.1 and a stacked film of a Cu layer 7.sub.1/an NiFe layer
9.sub.1/a Cu layer 7 which were manufactured under the same
conditions as those in device manufacturing. Magnetization of the
Co layer 5.sub.1 was 920 G, magnitude of anisotropy magnetic field
perpendicular to the film plane was 3500 Oe, magnetization of the
NiFe layer 91 was 810 G, and magnitude of inplane anisotropy
magnetic field was 220 Oe.
[0083] Resonant frequencies of the Co layers 5.sub.1 and 5.sub.2
were 9.8 GHz, and resonant frequencies of the NiFe layers 9.sub.1
and 9.sub.2 were set to 9.6 GHz by adjusting bias magnetic field
within the film plane. A resistance R.sub.0 was 1.3 .OMEGA., a
threshold current was 1.8 .mu.A, and a resonant voltage .DELTA.V
was 0.21 mV at an OFF time, while an effective resistance at ON
time was (.DELTA.V/I.sub.th)+R.sub.0=118 .OMEGA.. The resonant
frequency could be elevated by increasing the number of
stackings.
EXAMPLE 3
[0084] An element with a similar structure except that the Fe layer
with a thickness of 1 nm in Example 1 was replaced by a Co film (an
inplane magnetized film) with a thickness of a 1.2 nm was
manufactured according to a method similar to that in Example 1. It
was found from magnetization measurement that a difference
(4.pi.M.sub.S-H.sub.A1) between a shape anisotropy magnetic field
4.pi.Ms of the Co film and a crystalline anisotropy magnetic field
H.sub.A1 perpendicular to a film plane was 3500 Oe. When current
was flowed in a element such a state that bias magnetic field of
500 Oe was applied on a film plane of the element perpendicularly
thereto and magnetization of the Co layer with a thickness of 1.2
nm was set to be perpendicular to the film plane, a resonant
voltage of 0.15 mV was observed at a current of 2 .mu.A or less.
Further, when external magnetic field was applied to the element in
a direction reverse to the bias magnetic field, it was observed
that the resonant voltage was decreased to 0.5 mV at an application
time of magnetic field with 30 Oe, and it was confirmed that the
element functioned as a magnetic sensor for magnetic field
perpendicular to a film plane.
[0085] As described above, the resonant magneto-resistance effect
element according to each Example can be manufactured using an
ordinary film forming technique, and it has a feature that, even if
a joined area in a device is decreased, a sensitivity and an SN
Ratio are not lowered, so that a high density and a high magnetic
resistance change can be realized.
[0086] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concepts as defined by the
appended claims and their equivalents.
* * * * *