U.S. patent application number 10/836205 was filed with the patent office on 2006-02-16 for substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electro-optical apparatus and electronic apparatus.
This patent application is currently assigned to SEIKO EPSON CORPORATION. Invention is credited to Toshimitsu Hirai.
Application Number | 20060035064 10/836205 |
Document ID | / |
Family ID | 34068899 |
Filed Date | 2006-02-16 |
United States Patent
Application |
20060035064 |
Kind Code |
A1 |
Hirai; Toshimitsu |
February 16, 2006 |
Substrate, device, method of manufacturing device, method of
manufacturing active-matrix substrate, electro-optical apparatus
and electronic apparatus
Abstract
A substrate on which a pattern is formed by a discharged
functional liquid, includes a coating region coated with the
functional liquid, and banks formed to enclose the coating region,
wherein a difference between a contact angle of the functional
liquid with respect to the coating region and a contact angle of
the functional liquid with respect to the bank is above
40.degree..
Inventors: |
Hirai; Toshimitsu;
(Chino-shi, JP) |
Correspondence
Address: |
OLIFF & BERRIDGE, PLC
P.O. BOX 19928
ALEXANDRIA
VA
22320
US
|
Assignee: |
SEIKO EPSON CORPORATION
Tokyo
JP
|
Family ID: |
34068899 |
Appl. No.: |
10/836205 |
Filed: |
May 3, 2004 |
Current U.S.
Class: |
428/195.1 ;
257/E21.174; 257/E21.414; 257/E21.582; 257/E29.151 |
Current CPC
Class: |
H01L 27/3246 20130101;
Y10T 428/24802 20150115; C03C 2217/479 20130101; C03C 2218/32
20130101; H01L 51/0005 20130101; H01L 29/66765 20130101; H01L
27/1292 20130101; C03C 2217/475 20130101; C03C 17/3411 20130101;
H01L 21/76838 20130101; H01L 51/5284 20130101; H01L 21/288
20130101; C03C 17/34 20130101; H01L 29/4908 20130101 |
Class at
Publication: |
428/195.1 |
International
Class: |
B32B 3/00 20060101
B32B003/00 |
Foreign Application Data
Date |
Code |
Application Number |
May 9, 2003 |
JP |
2003-131600 |
May 9, 2003 |
JP |
2003-131601 |
Apr 9, 2004 |
JP |
2004-115371 |
Claims
1. A substrate on which a pattern is formed by a discharged
functional liquid, comprising; a coating region coated with the
functional liquid; and banks formed to enclose the coating region,
wherein a difference between a contact angle of the functional
liquid with respect to the coating region and a contact angle of
the functional liquid with respect to the bank is above 40
.degree..
2. A substrate according to claim 1, wherein the contact angle of
the functional liquid with respect to said coating region is below
15.degree..
3. A substrate according to claim 1, wherein the bank is subjected
to surface reformation by a plasma treatment.
4. A substrate according to claim 1, wherein the bank contain
fluorine or a fluorine component.
5. A device comprising a substrate on which a pattern is formed,
wherein a functional liquid is discharged onto the substrate of
claim 1 so as to form the pattern.
6. A device according to claim 5, wherein the functional liquid
contains conductive particles.
7. A device according to claim 5, wherein the functional liquid
contains a material which is made conducting by heat treatment or
optical treatment.
8. An electro-optical apparatus comprising a device of claim 5.
9. An electronic apparatus comprising the electro-optical apparatus
of claim 8.
10. A method of manufacturing a device comprising a step of
discharging a functional liquid onto the substrate of claim 1 so as
to form the pattern.
11. A method of manufacturing an active matrix substrate,
comprising: a first step of forming a gate wiring on the substrate
of claim 1; a second step of forming a gate insulating film on the
gate wiring; a third step of laminating a semiconductor layer via
the gate insulating film; a fourth step of forming a source
electrode and a drain electrode on the gate insulating layer; a
fifth step of arranging an insulating material on the source
electrode and the dram electrode; and a sixth step of forming a
pixel electrode on the arranged insulating material, wherein any
one of the first step, the fourth step and the sixth step includes
a step of discharging a functional liquid onto the substrate.
12. A substrate with a surface on which a pattern is formed by a
discharged functional liquid, comprising: a coating region to be
coated with the functional liquid; and a repellent region formed by
repellent film enclosing the coating region, wherein a difference
between a contact angle of the functional liquid with respect to
the coating region and a contact angle of the functional liquid
with respect to the repellent region is above 40.degree..
13. A substrate according to claim 12, wherein a contact angle of
the functional liquid with rest to the coating region is below
15.degree..
14. A substrate according to claim 12, wherein the repellent film
is a monomolecular film formed on the surface.
15. A substrate according to claim 14, wherein the monomolecular
film is a self organizing film composed of organic molecules.
16. A device comprising a substrate on which a pattern is formed,
wherein a functional liquid is discharged onto the substrate of
claim 12 so as to form the pattern.
17. A device according to claim 16, wherein the functional liquid
contains conductive particles.
18. A device according to claim 16, wherein the functional liquid
contains a material which is made conducting by heat treatment or
optical treatment.
19. An electro-optical apparatus comprising a device of claim
16.
20. An electronic apparatus comprising the electro-optical
apparatus of claim 19.
21. A method of manufacturing a device comprising a step of
discharging a functional liquid onto the substrate of claim 12 so
as to form the pattern.
22. A method of manufacturing an active matrix substrate,
comprising: a first step of forming a gate wiring on the substrate
of claim 12; a second step of forming a gate insulating film on the
gate wiring; a third step of laminating a semiconductor layer via
the gate insulating film; a fourth step of forming a source
electrode and a drain electrode on the gate insulating layer; a
fifth step of arranging an insulating material on the source
electrode and the drain electrode; and a sixth step of forming a
pixel electrode on the arranged insulating material, wherein any
one of the first step, the fourth step and the sixth step includes
a step of discharging a functional liquid onto the substrate.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a substrate for tin film
patterning, a device, a method of manufacturing a device, a method
of manufacturing an active matrix substrate, and an electro-optical
apparatus and electronic apparatus.
[0003] Priority is claimed on Japanese Patent Applications No.
2003-131600, filed May 9, 2003, No. 2003-131601, filed May 9, 2003,
and No. 2004-115371, filed Apr. 9, 2004, the contents of which are
incorporated herein by reference.
[0004] 2. Description of Related Art
[0005] Conventionally, as a method of manufacturing a fine wiring
pattern such as a semiconductor integrated circuit, a
photolithography method has been widely used. On the other bond,
for example, in Japanese Unexamined Patent Application, First
Publication No. H11-274671 or in Japanese Unexamined Patent
Application, First Publication No. 2000-216330, methods of using a
droplet discharge method have been disclosed. In the technique
disclosed in these publications, a functional liquid containing a
pattern forming material is discharged from a droplet discharge
head onto a substrate so that the material is arranged (coated) on
the pattern forming surface to form a wiring pattern. This
technique is considered to be very effective since it can
correspond to manufacture of small quantities and large
varieties.
[0006] Incidentally, densification of circuits for configuring
devices has recently been advancing, and for example, for the
wiring pattern there has been a demand for these to be miniaturized
and made thinner.
[0007] However, in the case where an attempt is made to form such
fine wiring patterns by the aforementioned droplet discharge
method, it is particularly difficult to make the width of the
wiring sufficiently accurate. Therefore, for example, in Japanese
Unexamined Patent Application, First Publication No. H09-203803 or
in Japanese Unexamined Patent Application, First Publication No.
H09-230129, a technique of providing banks being partitioning
members, on the substrate and performing surface treatment so as to
make the top of the banks repellent and the other portions
attraction, has been described.
[0008] By using this technique, even if it is a thin line, the
width of the wiring pattern may be defined by the width the banks.
Moreover, even if the discharged droplet is partially placed on the
banks, it is repelled by the repellent banks and flow into the
attraction section being a ditch between the banks.
[0009] On the other hand, the banks are formed using the
photolithography method, which may increase the cost. Therefore, a
method has been proposed where, on a attraction section of a
substrate previously formed with a pattern of repellent sections
and attraction sections, a liquid material (functional liquid) is
selectively discharged by the droplet discharge method. In this
case, a liquid material dispersed with conductive particles easily
stays on the attraction section. Therefore, it becomes possible to
form the wiring pattern without forming banks but still maintaining
the position accuracy.
[0010] However, the conventional techniques have the following
problems.
[0011] In the case where the difference in the wettability
(affinity) with respect to the droplet between the repellent
sections and the attraction section is small there is a possibility
in that, although the droplet placed on the banks is repelled, it
may not become wet to spread out into the ditch.
[0012] Moreover, in the case where the diameter of droplet is
larger than the diameter of the ditch, there is concern that the
droplet may remain as is, landed on the ditch.
[0013] On the other hand, even if a substrate patterned with the
repellent sections and the attraction section is used, in the case
where the difference in the wettability (affinity) with respect to
the droplet between the repellent sections and the attraction
section is small, there is a possibility that, although the droplet
placed on the repellent sections is repelled, it may not become wet
to spread out into the attraction section.
[0014] The present invention takes the above problems into
consideration with the object of providing a substrate for thin
film patterning, a device, a method of manufacturing a device, a
method of manufacturing an active matrix substrate, and an
electro-optical apparatus and electronic apparatus, in which a
landed droplet can reliably get wet to spread out into a ditch so
as to form a thin line.
[0015] Another object of the present invention is to provide a
substrate for thin film patterning, a device, a method of
manufacturing a device, a method of manufacturing an active matrix
substrate, and an electro-optical apparatus and electronic
apparatus, in which a landed droplet can reliably get wet to spread
out into the attraction section so as to form a thin line, even if
a substrate patterned with the repellent sections and the
attraction section is used.
SUMMARY OF THE INVENTION
[0016] In order to achieve the abovementioned object, the following
construction is employed in the present invention.
[0017] The first aspect of the present invention is a substrate on
which a pattern is formed by a discharged functional liquid, having
a coating region coated with the functional liquid, and banks
formed to enclose the coating region, wherein a difference between
a contact angle of the functional liquid with respect to the
coating region and a contact angle of the functional liquid with
respect to the bank is above 40.degree..
[0018] Therefore, in the present invention, eve in the case where
the discharged functional liquid is partially placed on the top of
the banks, the functional liquid can reliably go into the coating
region between the barks due to the fluidity of the functional
liquid or the capillary phenomenon, enabling a fine linear pattern
defined by the width between the banks to be obtained. Moreover,
the contact angle of the functional liquid with respect to the
coating region is preferably below 15.degree.. In this case the
functional liquid of the coating region becomes wet to spread out
on the substrate more easily so that the functional liquid can be
filled into the coating region more evenly. Therefore, the
functional liquid discharged at intervals can be integrated without
being segmented in the coating region, which enables prevention of
defect such as disconnection.
[0019] As a method of increasing the contact angle with respect to
the banks, a construction may be employed in which the surface is
reformed by a plasma treatment, or the banks are made to contain
fluorine or a fluorine component. If plasma treatment is performed,
the repellency may be controlled by adjusting the treatment
time.
[0020] The second aspect of the present invention is a substrate
with a surface on which a pattern is formed by a discharged
functional liquid, having a coating region to be coated with the
functional liquid, and a repellent region formed by repellent film
enclosing the coating region. A difference between a contact angle
of the functional liquid with respect to the coating region and a
contact angle of the functional liquid with respect to the
repellent region is above 40.degree..
[0021] Therefore, on the substrate of the present invention, even
in the case where the discharged functional liquid is partially
placed on the top of the repellent region, the functional liquid
can reliably go into the coating region between the repellent
region due to the difference in affinity or the fluidity of the
functional liquid, enabling to obtain a fine linear pattern defined
by the width of the coating region to be obtained. Moreover, the
contact angle of the functional liquid with respect to the coating
region is preferably below 15.degree.. In this case the functional
liquid of the coating region becomes wet to spread out on the
substrate more easily so that the functional liquid can be filled
into the coating region more evenly. Therefore, the functional
liquid discharged at intervals can be integrated without being
segmented in the coating region, which enables prevention of
defects such as disconnection.
[0022] In the present invention, for the repellent film, a
configuration may be suitably employed in which a repellent
monomolecular film is formed on the surface. A self organizing film
composed of organic molecules is preferable for the repellent
monomolecular film. In this case, the monomolecular film may be
easily formed.
[0023] The coating region is preferably imparted with an attractive
property. In bis case a method of irradiating ultraviolet light or
a method of exposing the substrate in an ozone atmosphere may be
suitably employed. In this case, the repellent film which was once
formed, can be partially broken down thoroughly and evenly by using
a mask corresponding to the pattern, enabling a lessening of the
repellency so ta a desired attraction be evenly obtained.
[0024] On the other hand, the third aspect of the present invention
is a device comprising a substrate on which a pattern is formed,
wherein a functional liquid is discharged onto the abovementioned
substrate so as to form the pattern.
[0025] Therefore, in the present invention, by using the substrate
on which a thin linear pattern is patterned, it becomes possible to
realize a small and thin device.
[0026] Moreover, in the case where the functional liquid contains
conductive particles, it becomes possible to realize a device on
which a thin linear pattern is patterned.
[0027] The fourth aspect of the present invention is an
electro-optical apparatus having the abovementioned device.
[0028] The fifth aspect of the present invention is electronic
apparatus having the abovementioned electro-optical apparatus.
[0029] Therefore it becomes possible to obtain an electro-optical
apparatus and electronic equipment of small size and thickness, in
which defects such as disconnection rarely occur.
[0030] The sixth aspect of the present invention is a method of
manufacturing a device in which a functional liquid is discharged
onto the substrate so as to form the pattern.
[0031] Furthermore, the seventh aspect of the present invention is
a method of manufacturing an active matrix substrate having a first
step for forming a gate wiring on the substrate, a second step for
forming a gate insulating film on the gate wiring, a third step for
laminating a semiconductor layer via the gate insulating film, a
fourth step for forming a source electrode and a drain electrode on
the gate insulating layer, a fifth step for arranging an insulating
material on the source electrode and the drain electrode, and a
sixth step for forming a pixel electrode on the arranged insulating
material, and any one of the first step, the fourth step and the
sixth step includes a step for discharging a functional liquid onto
the substrate.
[0032] According to the present invention, it becomes possible to
obtain a thin type active matrix substrate on which a thin liner
pattern is formed, and in which quality defects such as
disconnection in the gate wiring, source electrodes, drain
electrodes, and pixel electrodes rarely occur.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] FIG. 1 is a schematic perspective view of a droplet
discharge apparatus.
[0034] FIG. 2 is a diagram for explaining the principle of
discharging a liquid body by a piezo method.
[0035] FIG. 3A to FIG. 3D show a procedure for forming a wiring
pattern according to a first embodiment.
[0036] FIG. 4A to FIG. 4D show a procedure for forming a wiring
pattern according to a second embodiment.
[0037] FIG. 5 is a plan view of a liquid crystal display viewed
from the side of a facing substrate.
[0038] FIG. 6 is a sectional view taken along a line H-H' of FIG.
5.
[0039] FIG. 7 is an equivalent circuit diagram of the liquid
crystal display.
[0040] FIG. 8 is an enlarged sectional view of part of a liquid
crystal display.
[0041] FIG. 9 is an enlarged sectional view of part of an organic
EL apparatus.
[0042] FIG. 10 is a diagram for explaining a step for manufacturing
a thin film transistor.
[0043] FIG. 11 is a diagram for explaining a step for manufacturing
the thin film transistor.
[0044] FIG. 12 is a diagram for explaining a step for manufacturing
the thin film transistor.
[0045] FIG. 13 is a diagram for explaining a step for manufacturing
the thin film transistor.
[0046] FIG. 14 shows another aspect of a liquid crystal
display.
[0047] FIG. 15 is an exploded perspective view of a plasma display
device.
[0048] FIG. 16 is au exploded perspective view of a non-contact
card medium.
[0049] FIG. 17A to FIG. 17C show specific examples of electronic
apparatus of the present invention.
DETAILED DESCRIPTION OF INVENTION
[0050] Hereunder is a description of embodiments of a substrate, a
device, a method of manufacturing a device, a method of
manufacturing an active matrix substrate, and an electro-optical
apparatus and electronic apparatus of the present invention, with
reference of the drawings.
First Embodiment
[0051] The present embodiment is described using an example of a
case where a wiring pattern (pattern) ink including conductive
particles (functional liquid), is discharged from a nozzle of a
liquid discharge head in droplet form by the droplet discharge
method so as to form a wiring pattern formed from a conductive film
on a substrate.
[0052] This wiring pattern ink is composed of a dispersing liquid
being a dispersion medium with conductive particles dispersed the
or a solution being a solvent (dispersion medium) with organosilver
compounds or silver oxide nanoparticles dispersed therein.
[0053] In the present embodiment, for the conductive particles, for
example, metal particles which contain gold, silver, copper,
palladium, or nickel, and oxidized substances thereof, organosilver
compound, a conductive polymer or superconductive particles are
used.
[0054] To increase the dispersibility of these conductive
particles, organic matter may be coated on the surface for use.
[0055] The diameter of the conductive particles is preferably above
1 nm and below 0.1 .mu.m. If it is larger than 0.1 .mu.m, there is
concern of clogging at the nozzle of a liquid discharge head
described later. If it is smaller than 1 nm, the volume ratio of
coating with respect to conductive panicles is increased, causing
an excessive ratio of organic matter in the film to be
obtained.
[0056] The dispersion medium is not particularly restricted
provided it can disperse the abovementioned conductive particles
therein without condensation. For example, the examples include, in
addition to water, alcohol such as methanol, ethanol, propanol and
butanol, hydrocarbon compounds such as n-heptane, n-octane, decane,
decane, dodecane, tetradecane, toluene, xylene, cymene, dulene,
indent, dipentene, tetrahydronaphthalene, decahydronaphthalene and
cyclohexylbenzene, ether compounds such as ethyleneglycoldimethyl
ether, ethyleneglycoldiethyl ether, ethyleneglycolmethylethyl
ether, diethyleneglycoldimethyl ether, diethylenglycoldiethyl
ether, diethyleneglycolmethylethyl ether, 1,2-dimethoxyethane, bis
(2-methoxyethyl)ether, and p-dioxane, and polar compounds such as
propylene carbonate, .gamma.-butyrolactone, N-methyl-2-pyrolidone,
dimethylformamide, dimethylsulfoxide and cyclohexanone. Among
these, water, alcohol, hydrocarbon compounds and ether compounds
are preferable in terms of the dispersibility of particles,
stability of dispersion liquid, and easy application to the droplet
discharge method (inkjet method), where water ad hydrocarbon
solvent are especially able as a dispersion medium.
[0057] It is preferable that the surface tension of the liquid of
the abovementioned conductive particles be in the range above 0.02
N/m and below 0.07 N/m. This is because when liquid is discharged
using the inkjet method, if the surface tension is less than 0.02
N/m, the wettability of the ink composition with respect to the
nozzle surface increases so that the discharge direction tends to
deviate, and if the surface tension exceeds 0.07 N/m, the shape of
the meniscus at the tip of the nozzle becomes unstable, making it
difficult to control the discharge amount and the discharge timing.
In order to modify the surface tension, a good way is to add a
small amount of surface tension modifier such as a fluorine group,
silicon group, nonionic group, into the abovementioned dispersing
liquid to an extent not to largely decrease the contact angle with
the substrate. The nonionic surface tension modifier increases the
wettability of liquid on the substrate, improves the leveling
property of the film, and helps to prevent the occurrence of minute
ruggedness on the film. The abovementioned surface tension modifier
may contain organic compounds such as alcohol, ether, ester,
ketone, and the like as required.
[0058] The viscosity of the abovementioned dispersing liquid is
preferably above 1 mPas and below 50 mPas. This is because when
liquid material is discharged in droplet form using the inkjet
method, if the viscosity is smaller than 1 mPas, the area around
the nozzle is easily contaminated by discharged ink, and if the
viscosity is higher than 50 mPas, the frequency of clogging at the
nozzle hole increases, making it difficult to smoothly discharge
droplets.
[0059] For the substrate on which a wiring pattern is formed,
various types of plates such as a glass, a fused silica, a Si
wafer, plastic film, a metal plate, or the like may be used.
Moreover, the examples also include substrates of such various
materials formed with a semiconductor film, a metal film, a
dielectric film, an organic film as a ground layer on the
surface.
[0060] Here, discharging techniques of the droplet discharge method
include an electrification controlling method, a pressing and
vibrating method, an electromechanical converting method, an
electro-thermal converting method, an electrostatic attracting
method, and the like. In the electrification controlling method, an
electric charge is applied to a material by an electrification
electrode and the discharge direction of the material is controlled
by a deflecting electrode to discharge from the nozzle. Moreover,
in the pressing and vibrating method, a super-high pressure of
about 30 kg/cm.sup.2 is applied to a material to discharge the
material from the tip of the nozzle. If a control voltage is not
applied, the material goes straight and is discharged from the
nozzle. If the control voltage is applied, due to an electrostatic
repulsion generated between the materials, the materials are
dispersed and are not discharged from the nozzle. In the
electrothermal converting method, the property where % a piezo
device (piezoelectric element) deforms on receiving a pulsed
electric signal is used, and due to the deformation of the piezo
device, a pressure is applied to a space storing a material,
through a flexible substance so as to push the material out of this
space and discharge it from the nozzle.
[0061] Furthermore, in the electrothermal converting method, the
material is rapidly gasified so as to generate bubbles by a heater
provided in a space storing the mal, so that the material in the
space is discharged by the pressure of the bubbles. In the
electrostatic attracting method, a micropressure is applied into a
space storing the material and a meniscus of the material is formed
in the nozzle, in which state an electrostatic attractive force is
applied so as to draw the medial out. In addition to these methods,
such techniques as a method of using a viscosity variation of a
fluid due to an electric field, and a method of blowing the
material out by an electric discharge spark are also applicable.
The advantage of the droplet discharge method is that waste of the
material in use is less, and the desired amount of material can be
surely arranged in the desired position. The amount of one drop of
liquid material (fluid body) discharged by the droplet discharge
method is for example 1 to 300 ng (nanogram).
[0062] Next is a description of a device manufacturing apparatus
used when manufacturing a device, according to the present
invention.
[0063] For this device manufacturing apparatus, a droplet discharge
apparatus (inkjet device) which manufactures the device by
discharging droplets from a droplet discharge head to a substrate,
is used.
[0064] FIG. 1 is a perspective view showing a schematic
configuration of a droplet discharge apparatus IJ.
[0065] The droplet discharge apparatus IJ includes; a droplet
discharge head 1, a X direction driving shaft 4, a Y direction
guide shaft 5, a controller CONT, a stage 7, a cleaning mechanism
8, a base 9, and a heater 15.
[0066] The stage 7 is for supporting a substrate P on which an ink
(liquid material) is provided by this droplet discharge apparatus
IJ, and includes a fixing mechanism (not shown) which fixes the
substrate P at a reference position.
[0067] The droplet discharge head 1 is a muti-nozzle type droplet
discharge head equipped with a plurality of discharge nozzles
having a longitudinal direction matching the X axis direction. The
plurality of discharge nozzles are provided and arranged in
constant intervals in the Y axis direction on the lower surface of
the droplet discharge head 1. An ink containing the abovementioned
conducive particles is discharged from the discharge nozzles of the
droplet discharge head 1 onto the substrate P supported by the
stage 7.
[0068] To the X direction driving shaft 4, an X Zion driving motor
2 is connected. The X direction driving motor 2 is a stopping motor
or the like, which rotates the X direction driving shaft 4 when a
driving signal for the X axis direction is supplied form the
controller CONT. When the X direction driving shaft 4 rotates, the
droplet discharge head 1 moves in the X axis direction.
[0069] The Y direction guide shaft 5 is fixed so as to not move
relative to the base 9. The stage 7 includes a Y direction driving
motor 3. The Y direction driving motor 3 is a stepping motor or the
like, which moves the stage 7 in the Y axis direction when a Y axis
direction driving signal is supplied from the controller CONT.
[0070] The controller CONT supplies a voltage for droplet discharge
control to the droplet discharge head 1. The controller CONT also
supplies a driving pulse signal which controls the movement of the
droplet discharge head 1 in the X axis direction, to the X
direction driving motor 2, and supplies a driving pulse signal
which controls the stage 7 in the Y axis direction, to the Y
direction driving motor 3.
[0071] The cleaning mechanism 8 is for cleaning the droplet
discharge head 1. The cleaning mechanism 8 includes a Y direction
driving motor (not shown). By the driving of this Y direction
driving motor, the cleaning mechanism moves along the Y dion guide
shaft 5. The movement of the cleaning mechanism 8 is also
controlled by the controller CONT.
[0072] The heater 15 is here a device for heat treatment of the
substrate P by lamp annealing, which evaporates and dries the
solvent included in a liquid material coated on the substrate P.
Power ON/OFF of this heater 15 is also controlled by the controller
CONT.
[0073] The droplet discharge apparatus IJ discs droplets onto the
substrate P while relatively scanning the stage 7 supporting the
droplet discharge head 1 and the substrate P. Here, in the
description hereunder, the arrangement is such that the X direction
is the scanning direction and the Y axis direction orthogonal to
the X axis direction is the non scanning direction. Therefore, the
discharge nozzles of the droplet discharge head 1 are provided and
arranged in constant intervals in the Y axis direction which is the
non-scanning direction. In FIG. 1, the droplet discharge head 1 is
arranged at a right angle with respect to the running direction of
the substrate P. However, the arrangement may be such that the
angle of the droplet discharge head 1 is adjusted to cross with
respect to the running direction of the substrate P. If this is
done, the pitch between nozzles may be adjusted by adjusting the
angle of the droplet discharge head 1. Moreover, the arrangement
may be such that the distance between the substrate P and the
nozzle surface can be arbitrarily adjusted.
[0074] FIG. 2 is a diagram for explaining the principle of
discharging a liquid material by a piezo method.
[0075] In FIG. 2, a piezo device 22 is installed adjacent to a
liquid chamber 21 which accommodates a liquid material (wiring
pattern ink, functional liquid). The liquid material is supplied
into the liquid chamber 21 via a liquid material supplying system
23 including a material tank which accommodates the liquid
material. The piezo device 22 is connected to a driving circuit 24.
A voltage is applied to the piezo device 22 through this driving
circuit 24 so as to deform the piezo device 22, so that the liquid
chamber 21 is deformed to discharge the liquid material from the
nozzle 25. In this case, the amount of distortion of the piezo
device 22 is controlled by changing the value of the applied
voltage. Moreover, the speed of distortion of the piezo device 22
is controlled by changing the frequency of the applied voltage. The
advantage of the droplet discharge by the piezo method is that the
material is not heated so that the composition of material is not
affected.
[0076] Next is a description of a method of forming a conductive
film wiring on a substrate, as an example of an embodiment of a
wiring pattern forming method of the present invention, with
reference to FIG. 3A to FIG. 3D. The pattern for method according
to the present embodiment is to arrange the abovementioned wiring
pattern ink on the substrate P so as to form a conductive film
pattern for wiring, on the substrate P, and generally comprises; a
bank forming step, a residue disposing step, a repellent treatment
step, a material arranging step and intermediate drying step, and a
baking step.
[0077] Hereunder is a detailed description of the respective
steps.
(Bank Forming Step)
[0078] A bank is a member which functions as a partition member.
The bank may be formed by any method such as a lithography method,
a printing method or the like. For example, if the lithography
method is used, then by a predetermined method such as spin
coating, spray coating, roll coating, dye coating, dip coating or
the like, an organic photosensitive material is coated onto a
substrate P to match the height of the bank, and a resist layer is
coated thereon. Then, a mask is applied matching the shape of the
bank (wiring pattern) and the resist is exposed and developed so as
to leave the resist matching the shape of the bank. Finally, the
bank material of the rest of the mask portion is removed by
etching. Moreover, a bank (ridge section) may be formed from two or
more layers composed of a lower layer of an organic or inorganic
material which is attractive with respect to the functional liquid
and an upper layer of an organic material which shows
repellency.
[0079] Therefore, as shown in FIG. 3A, banks B are formed for
example, in 10 .mu.m width so as to enclose a ditch section
(coating region) 31 on which the wiring pattern is to be
formed.
[0080] Prior to coating the organic material, HMDS treatment (a
method of making (CH.sub.3).sub.3SiNHSi(CH.sub.3).sup.3 into vapor
form for coating) is applied onto the substrate P for surface
reforming treatment (not shown in FIG. 3A).
[0081] The organic material for forming the bank may be a material
which is originally repellent with respect to the liquid material,
or an insulating organic material which can be made repellent by a
plasma treatment as described later, and which has good
adhesiveness with the base substrate and is easily paled by
photolithography. For example, polymeric materials such as acrylic
resin, polyimide resin, olefin resin, and melamine resin, may be
used.
Residue Disposing Step (Attractive Treatment Step))
[0082] Next, a residue disposing treatment is performed on the
substrate P so as to remove resist (organic matter) residues
between the banks from when forming the banks.
[0083] For the residue disposing treatment, an ultraviolet (LV)
radiation treatment which disposes of the residue by irradiating
ultraviolet, an O.sub.2 plasma treatment which uses oxygen as a
treatment gas in the atmospheric air, and the like may be selected.
However, the O.sub.2 plasma treatment is performed here.
[0084] Specifically, it is performed by irradiating oxygen in
plasma state from a plasma discharging electrode. The condition of
the O.sub.2 plasma treatment is such that, for example, the plasmas
power is 50 to 1000 W, the oxygen gas flow rate is 20 to 100
mL(liter)/min, the conveyance speed of the substrate P with respect
to the plasma discharging electrode is 0.5 to 10 mm/s and the
temperature of the substrate is 70 to 90.degree. C.
[0085] If the substrate P is a glass substrate, the surface is
attractive with respect to a wiring pattern forming material.
However, similarly to the present embodiment, by performing the
O.sub.2 plasma treatment or the ultraviolet radiation treatment for
disposing residues, the ditch section 31 may be made more
attractive. In the present embodiment, the condition of the plasma
treatment is adjusted so that the contact angle of the ditch
section 31 with respect to an organosilver compound (described
later) used as the wiring pattern forming material, becomes below
15.degree. (for example, the conveyance speed of the substrate P is
deceased so as to extend the time for plasma treatment).
(Repellent Treatment Step)
[0086] Subsequently, the repellent treatment is performed on the
bank B so as to impart repellency to the surface. For the repellent
treatment, for example, a plasma treatment method which uses
tetrafluoromethane as a ement gas in atmospheric air (CF.sub.4
plasma treatment method) may be adopted. The condition of the
CF.sub.4 plasma treatment is such that, for example, the plasma
power is 100 to 800 W, the tetrafluoromethane gas flow rate is 50
to 100 mL(liter)/min, the substrate conveyance speed with respect
to the plasma discharging electrode is 0.5 to 10 mm/s, and the
temperature of the substrate is 70 to 90.degree. C.
[0087] The treatment gas is not limited to tetrafluoromethane
(carbon tetrafluoride) and other gas of fluorocarbon may be used.
In the present embodiment, the condition of the plasma treatment is
adjusted so that the contact angle of the organosilver compound
used as the wiring pattern forming material with respect to the
bank B becomes 40.degree. or more larger than the contact angle
with to the ditch section 31 (for example, the conveyance speed of
the substrate P is decreased so as to extend the time for plasma
treatment).
[0088] By performing such repellent treatment, a fluorine group is
introduced into the resin constituting the banks B so as to impart
a high repellency with respect to the ditch section 31. The
abovementioned O.sub.2 plasma treatment as the attractive treatment
may be performed prior to forming the banks B. However due to the
properly that an acrylic resin or a polyimide resin is more easily
fluorinated (made repellent) after pretreatment by O.sub.2 plasma,
the O.sub.2 plasma treatment is preferably performed after forming
the banks B.
[0089] Due to the repellent treatment on the banks B, there way be
a slight effect on the surface of the substrate P on which the
attractive treatment is previously performed. However, particularly
in the case where the substrate P is composed of glass or the like,
the fluorine group is not introduced by the repellent treatment, so
that the attractive property, that is the wettability of the
substrate P, is not substantially compromised.
[0090] Moreover, the banks B way be formed from a repellent
material (for example, resin material having a fluorine group) so
as to omit the repellent treatment.
[0091] By these bank forming step, residue disposing step, and
repellent treatment step, the substrate for thin firm patterning is
formed.
(Material Arranging Step and Intermediate Drying Step)
[0092] Next, the wiring pattern forming material is coated on the
ditch section 31 on the substrate P using the droplet discharge
method, by the droplet discharge apparatus IJ. Here, an ink
(functional liquid) composed of organosilver compound used as the
conductive material and diethylene glycol dimethyl ether used as
the solvent (dispersion medium) is discharged.
[0093] That is, in the material arranging step, as shown in FIG.
3B, the liquid material containing the wiring pattern forming
material is discharged from the liquid discharge head 1 in the form
of droplet 32 and the droplet 32 is arranged in the ditch section
31 on the substrate P. The condition of the droplet discharge is
such that the ink weight is 4 ng/dot and the ink speed (discharge
speed) is 5 to 7 m/s. In the present example, the arrangement is
such that the diameter D of the droplet 32 is greater than the
width W of the ditch section 31 formed by the banks B (in the
present example, the width of the opening of the ditch section 31).
Specifically, the arrangement is such that the W of the opening of
the ditch section 31 is below 10 .mu.m and the diameter D of the
droplet 32 is about 15 to 20 .mu.m
[0094] When such a droplet 32 is discharged from the droplet
discharge head 1 to arrange the liquid body into the ditch section
31, since the diameter D of the droplet 32 is greater than the
width W of the ditch section 31, as shown by the two-dot chain line
in FIG. 3C, the droplet 32 is partially placed on the top of the
banks B. However, the surface of the banks B is repellent and
tapered so 5 the partial droplet 32 placed on the top of the banks
B is repelled from the banks B, and then flows into the ditch
section 31 due to the capillary phenomenon of the ditch section 31.
As a result, as shown by the solid line in FIG. 3C, the whole
droplet 32 goes into the ditch section 31.
[0095] Moreover, since the attractive treatment is performed on the
substrate P, the liquid body 32a discharged into the ditch section
31 or flowing out from the banks B is easily spread out so that the
liquid body 32a can be filled into the ditch section 31 more
evenly. Therefore, although the width W of the ditch section 31 is
narrower (smaller) than the diameter D of the droplet 32, the
droplet 32 (liquid body 32a) discharged into the ditch section 31
goes into the ditch section 31 and is filled evenly therein.
(Intermediate Drying Step)
[0096] After discharging the droplet onto the substrate P, a drying
treatment (intermediate drying) is performed for removing the
dispersion medium as necessary. The drying treatment may be
performed by a heat treatment, for example, by a normal hot plate,
an electric furnace, or the like which heats up the substrate P. In
the present embodiment, for example, the heating is performed at
180.degree. C. for about 60 min. This heating is not necessarily
performed in atmospheric air and may be performed under an
atmosphere of N.sub.2.
[0097] Moreover, this drying treatment can be performed by lamp
annealing.
[0098] The light source of the light used for lamp annealing is not
particularly limited. However an infrared lamp, a xenon lamp, a YAG
laser, an argon laser, a carbon dioxide gas laser, and excimer
lasers such as XeF, XeCl, XeBr, KrF, KrCl, ArF and ArCl may be used
as the light source. The light sources are generally used in an
output range of above 10 W and below 5000 W. However one in a range
of above 100 W and below 1000 W is sufficient for the present
embodiment
[0099] By repeatedly performing this intermediate drying step and
the abovementioned material arranging step, the film can be formed
in a desired thickness.
(Baking Step)
[0100] Regarding the conductive material after the discharging
step, if it is an organosilver compound for example, ten in order
to obtain conductivity, it is necessary to perform heat treatment
so as to remove the organic component of the organosilver compound
and leave the silver particles. For this purpose, beat treatment
and/or light treatment is performed on the substrate after the
discharging step.
[0101] The heat treatment and/or light treatment is normally
performed in air, however it may be performed in an inert gas
atmosphere such as nitrogen, argon and helium. The temperature of
the heat treatment and/or light treatment is appropriately
determined considering the boiling point (vapor pressure) of the
dispersion medium, the kind and the pressure of the atmosphere gas,
the thermal behavior such as the disperibility or the oxidizability
of the microparticles or organosilver compounds, the
presence/absence of coatings, and the heat resistant temperature of
the base material.
[0102] For example, it is necessary to bake at a temperature of
about 200.degree. C. so as to remove the organic component of the
organosilver compound. Moreover, if a plastic substrate is used, it
is preferably baked at a temperature of above room temperature and
below 100.degree. C.
[0103] By means of the abovementioned steps, the conductive
material (organosilver compound) after the discharging step is
converted into a conductive film due to the residue of the silver
particles so that, as shown in FIG. 3D, a conductive pattern as a
continuous film, that is the wring pattern (in film pattern) 33 is
obtained.
Experimental Example
[0104] A glass substrate formed with banks was treated under
conditions of; plasma power 550 W, tetrafluoromethane gas flow rate
100 mL/min, He gas flow rate 10 mL/min, and substrate conveyance
speed with respect to the plasma discharging electrode of 2 mm/s.
Consequently, the contact angle of the organosilver compound
(diethylene glycol dimethyl ether solvent) was 66.2.degree. with
respect to the bank B after the repellent treatment, compared to
below 10.degree. with respect to the bank B before the repellent
treatment. Moreover, the contact angle of pure water was
104.1.degree. with respect to the bank B after the repellent
treatment, compared to 69.3.degree. with respect to the bank B
before the repellent treatment. In both cases, the contact angle of
the glass substrate with respect to the ditch section 31 was below
15.degree., and the difference between the contact angle with
respect to the ditch section 31 and with respect to the bank B was
above 40.degree..
[0105] Moreover, when discharging the droplet of the organosilver
compound using the abovementioned droplet discharge IJ, on the
substrate (bank material; organic photosensitive material) before
the abovementioned repellent treatment, it was possible to fill the
liquid body into the ditch section 31 having a width W of 100
.mu.m. However it was not possible to sufficiently fill into one
having a width W of 75 .mu.m. On the other hand, on the substrate
after the repellent treatment, even if the ditch section 31 had a
microwidth W of 25 .mu.m or 10 .mu.m, it was possible to fill this
with the liquid body.
[0106] In this way, in present embodiment, as a substrate for
patterning, the difference between the contact angle of the liquid
body with respect to the ditch section 31 and the contact angle of
the liquid body with respect to the bank B is made above
40.degree..
[0107] Therefore, even in the case where the droplet is partially
placed on the top of the banks B, the droplet may go into the ditch
section 31, enabling a fine linear pattern defined by the width
between the banks B to be obtained. Particularly in the present
embodiment, the contact angle of the liquid body with respect to
the ditch section 31 is made below 15.degree., even if the ditch is
narrower than the droplet, so that it is possible to fill with the
liquid body to realize the fine linear pattern. Moreover, the
liquid body of the ditch section 31 becomes wet to spread out on
the substrate P more easily so that the liquid body can be filled
into the ditch section 31 more evenly. Therefore, the liquid bodies
discharged at intervals can be integrated without being segmented
in the ditch section 31, which enables prevention of defects such
as disconnections, and also improvement of the quality as a
device.
Second Embodiment
[0108] Next is a description of a method of forming a conductive
film wiring on a substrate, as a second embodiment of a wiring
pattern forming method (pattern forming method) of the present
invention, with reference to FIG. 4A to FIG. 4D.
[0109] The wiring pattern for method according to the present
embodiment is to arrange the abovementioned wiring pattern ink on
the substrate P so as to form a conductive film pattern for wiring
(conductive film) on the substrate P, and generally includes; a
surface treatment step, a material arranging step, and a heat
treatment/light treatment step.
[0110] Hereunder is a detailed description of the respective
steps.
(Surface Treatment Step)
[0111] The surface treatment step is roughly divided into a
repellent treatment step for making the surface of a substrate
repellent, and a attractive treatment step for making the surface
of the substrate made repellent, attractive.
[0112] In the repellent treatment step, the surface of the
substrate which form a conductive film wiring is processed to make
this repellent with respect to the liquid material. Specifically,
surface treatment is performed on the substrate so that the
difference between the contact angle of the liquid material
containing the conductive particles and the contact angle with
respect to the coating region described later, becomes above
40.degree., preferably above 50.degree..
[0113] For a method of controlling the repellency (wettability) on
a surface, for example a method of forming a self organizing film
on the surface of the substrate may be employed.
[0114] In the self organizing film forming method, a self
organizing film composed of an organic film or the like is formed
on the surface of the substrate on which the conductive film wiring
is to be formed.
[0115] The organic film material for treating the substrate surface
includes a functional group which can bond with the substrate, a
functional group for reforming the surface of the substrate
(controlling surface energy), such as a attractive group or rent
group, which exits on the opposite side of the functional group
which can bond with the substrate, and a straight chain of carbon
or a partially branched carbon chain for connecting these
functional groups. This material bonds with the substrate,
self-organizes and forms a molecular film, such as monomolecular
film.
[0116] Here, the self organizing film includes a bonding functional
group which can react with atoms constituting the under layer, such
as a substrate, and other straight chain molecules, which are
formed by orienting a compound which has an extremely high
orientation characteristic due to the interaction of the straight
chain molecules. Since this self organizing film is made of
oriented monomolecules, film thickness can be extremely thin, and
is uniform at the molecular level. In other words, since molecules
of the same structures are positioned on the of the film, even and
superior attractive and repellent property can be applied onto the
surface of the film.
[0117] By using fluoroalkylsilane as the compound having a high
orientation characteristic, for example, the self organizing film
is formed by each compound being oriented such that the fluoroalkyl
group positions on the surface of the film so that even and
superior repellency can be imparted to the surface of the film.
[0118] Examples of compounds for forming the self organizing film
include; fluoroalkylsilanes, such as heptadecafluoro-1,1,2,2
tetrahydrodesyltriethoxysilane, heptadecafluoro-1,1,2,2
tetrahydrodesyltrimethoxysilane, heptadecafluoro-1,1,2,2
tetrahydrodesyltrichlorosilane, tidecafluoro-1,1,2,2
tetrahydrooctyltriethoxysilane, tridecafluoro-1,1,2,2
tetrahydrooctyltrimethoxysilane, tridecafluoro-1,1,2,2
tetrahydrooctyltrichlorosilane and trifluoropropyltimethoxysilane
(hereafter "FAS"). Regarding these compounds, one compound may be
used, however two or more types of compounds may be combined for
use. By using the FAS, it is possible to obtain adhesiveness with
the substrate and excellent repellency.
[0119] FAS is generally expressed by a constitutional formula
RnSiX.sub.(4-n). Here n is a 1 or higher and a 3 or lower integer,
X is a hydrolysis group such as the methoxy group, ethoxy group and
halogen atoms. R is a fluoroalkyl group, which has the structure
(CF.sub.3) (CF.sub.2) x (CHZ) y (where x is a 0 or higher and a 10
or lower integer, y is a 0 or higher and a 4 or lower integer), and
if a plurality of groups R or X are combined with Si, then all the
groups R or X may be the same or different. The hydrolysis group
expressed by X forms silanol by hydrolysis, and bonds with the
substrate by siloxane bonding, reacting with the hydroxyl group of
the substrate (glass, silicon). On the other band, R has a fluoro
group such as (CF.sub.2) on the surface, which reforms the ground
surface of the substrate into a surface which does not get wet
(surface energy is low).
[0120] The self organizing film composed of an organic film or the
like is formed on the substrate when the abovementioned raw
material compound and the substrate are set in the same sealed
container and left for 2-3 days at room temperature. If the entire
sealed container is held at 100.degree. C., the self organizing
film is formed on the substrate in about tree hours. This is a
method of forming self organizing film from a vapor phase, but self
organizing film can be formed from a liquid phase as well. For
example, when the substrate is dipped into a solution containing
the raw material compound, and is cleaned and dried, the self
organizing film is generated on the substrate.
[0121] It is preferable to perform a pretreatment on the surface of
the substrate by irradiating ultraviolet, or cleaning using solvent
before forming the self organizing film.
[0122] In this manner, by performing the self organizing film
forming method, as shown in FIG. 4A, a repellent film F is formed
on the surface of the substrate P.
[0123] Next, a wiring pattern forming material is coated so as to
reduce the repellency of a coating region on which the wiring
pattern is to be formed, and impart the attractive property
(attractive treatment), so that the wettability of the surface of
the substrate can be controlled.
[0124] Hereunder is a description of the attractive treatment.
[0125] Examples of attractive treatment include a method of
irradiating ultraviolet light having a wavelength of 170 to 400 nm.
At this time, by irradiating ultraviolet light using a mask
corresponding to the wiring pattern, only the wiring portion on the
repellent an F which was once formed, can be partially deteriorated
so as to lessen the repellency and make this attractive. That is,
by performing the abovementioned repellent treatment and the
attractive treatment, as shown in FIG. 4B, a coating region H1 with
attractiveity imparted to the position on which the wiring pattern
is to be formed, and a repellent region H2 composed of the
repellent film F enclosing the coating region H1 are formed on the
substrate P.
[0126] The degree of the release of the repellency may be adjusted
by the ultraviolet radiation time, however it may be also adjusted
by a combination of the intensity and the wavelength of ultraviolet
light, the heat treatment (heating up), and the like. In the
present embodiment, the ultraviolet light is irradiated in a
condition where the contact angle with respect to the coating
region H1 becomes less than 15.degree., so that the difference
between the contact angle of the liquid material containing the
conductive particles with respect to the coating region H1 and the
contact angle with respect to the repellent region H2 becomes
larger than 40.degree..
(Material Arranging Step)
[0127] Next, the wiring pattern forming material is coated onto the
coating region H1 on the substrate P using the droplet discharge
method, by the droplet discharge apparatus IJ. Here, as the
functional liquid (wiring pattern ink), a dispersing liquid being a
solvent (dispersion medium) with conductive particles dispersed
therein, is discharged. For the conductive particles used here, as
well as metal particles which contain gold, silver, copper,
palladium, or nickel, a conductive polymer or superconductive
particles are used.
[0128] That is, in the material arranging step, as shown in FIG.
4C, the liquid material containing the wiring pattern forming
material is discharged from the liquid discharge head 1 in the form
of droplet, and the droplet is arranged in the coating region H1 on
the substrate P. The condition of the droplet discharge is such
that the ink weight is 7 ng/dot and the ink Speed (discharge speed
is 5 to 7 m/s.
[0129] At this time, since the repellent region H2 is made
repellent, even if the droplet is partially placed on the top of
the repellent region H2, it is repelled from the repellent region
H2. Consequently, as shown in FIG. 4D, the droplet stays on the
coating region H1 between the repellent region H2. Furthermore,
since the coating region H1 is made attractive, the discharged
liquid body can easily spread out on the coating region H1 so that
the liquid body can be filled into the coating region H1 more
evenly without being segmented in a predetermined position.
(Heat Treatment/Light Treatment Step)
[0130] Regarding the conductive material after the discharging
step, it is necessary to completely remove the dispersion medium so
as to increase the electrical contact between particles. Moreover,
in the case where a coating material such as organic matter is
coated on the shoe of these conductive particles in order to
increase the dispersibility, it is also necessary to completely
remove this coating material. For this purpose, the heat treatment
and/or light treatment is performed on the substrate after the
discharging step.
[0131] The heat treatment and/or light treatment is normally
performed in air. However it may be performed in an inert gas
atmosphere such as nitrogen, argon and helium. The temperature of
the heat treatment and/or light treatment is appropriately
determined considering the boiling point (vapor pressure) of the
dispersion medium, the kind and the pressure of the atmosphere gas,
the thermal behavior such as the dispersibility or the
oxidizability of the microparticles, the presence/absence of
coatings, and the heat resistant temper of the base material.
[0132] For example, it is necessary to bake at a temperature of
about 300.degree. C. so as to remove the coating material composed
of organic matter. Moreover, if a plastic substrate is used, it is
preferably baked at a temperature of above room temperature and
below 100.degree. C.
[0133] The heat treatment and/or light treatment may be performed
by lamp annealing as well as a general heat treatment using, for
example, a hot plate, an electric furnace, or the like. The light
source of the light used for lamp anneal is not particularly
limited, however an infrared lamp, a xenon lamp, a YAG laser, an
argon laser, a carbon dioxide gas laser, and excimer lasers such as
Xe XeCl, XeBr, KrF, KrCl, ArF and ArCl may be used. These light
sources are generally used in the output range of above 10 W and
below 5000 W. However one in a range of above 100 W and below 1000
W is sufficient for the present embodiment.
[0134] By the abovementioned heat treatment and/or light treatment,
electrical contact between particles can be ensured, and these can
be converted into the conductive film.
[0135] By the series of the steps described above, the linear
conductive film pattern (conducive film wiring) is formed on the
substrate.
[0136] In present embodiment, as a substrate for patterning, the
difference between the contact angle of the functional liquid with
respect to the coating region H1 and the contact angle of the
functional liquid with respect to the repellent region H2 is made
above 40.degree.. Therefore, even in the case where the droplet is
partially placed on the top of the repellent region H2, the droplet
may flow into the coating region H1, enabling a fine linear pattern
defined by the width between the repellent region H2 to be
obtained. Particularly in the present embodiment, the contact angle
of the liquid body with respect to the coating region H1 is made
below 150.degree., so that the liquid body of the coating region H1
becomes wet to so out on the substrate P more easily, so that the
liquid body can be filled onto the coating region H1 more evenly.
Therefore, the liquid bodies discharged at intervals can be
integrated without being segmented on the coating region H1, which
enables prevention of defects such as disconnections, and also
improvement of the quality as a device.
Third Embodiment
[0137] Next as a third embodiment, is a description of a liquid
crystal display which is an example of the electro-optical
apparatus of the present invention. FIG. 5 is a plan view of a
liquid crystal display and the respective components according to
the present invention, viewed from the facing substrate side. FIG.
6 is a sectional view taken along a line H-H' of FIG. 5. FIG. 7 is
an equivalent circuit diagram of various kinds of elements, wiring,
and the like in a plurality of pixels formed in a matrix in an
image display region of the liquid crystal display. FIG. 8 is an
enlarged sectional view of part of the liquid crystal display. In
the respective drawings used in the description hereunder, the
degree of reduction may differ depending on respective layers and
respective members, so as to make them into a recognizable
size.
[0138] In FIG. 5 and FIG. 6, a liquid crystal display
(electro-optical apparatus) 100 of the present embodiment includes;
a TFT array substrate 10 and a facing subdue 20 which form a pair
with each other, and which are adhered by a sealing material 52
being a photocurable sealing material. A liquid crystal 50 is
filled into and retained in a region sectioned by this sealing
material 52. The sealing material 52 is formed in a closed frame
shape in a region within the substrate surface, and is of a
construction with no liquid crystal inlet nor traces of its sealing
by a sealing material.
[0139] In a region inside of the region formed by the sealing
material 52, a peripheral parting 53 being a shading material is
formed. Outside of the sealing material 52, a data line driving
circuit 201 and mounting terminals 202 are formed along one side of
the TFT array substrate 10, and scanning line driving circuits 204
are formed along the two sides adjacent to this side. On the
remaining one side of the TFT array substrate 10, a plurality of
wirings 205 are provided for connecting between the scanning line
driving circuits 204 provided on both sides of the image display
region. Moreover, on at lease one section of the corners of the
facing substrate 20, intra-substrate conductive materials 206 are
provided and arranged for electrically connecting between the TFT
array substrate 10 and the facing substrate 20.
[0140] Instead of forming the data line driving circuit 201 and the
scanning line driving circuits 204 on the TFT army substrate 10,
for example, a TAB (Tape Automated Bonding) substrate mounted with
a driving LSI, and a terminal group formed at the periphery of the
TFT army substrate 10, may be electrically aud mechanically
connected via an anisotropic conductive film. On the liquid crystal
display 100, a phase contrast plate, a polarizing plate, or the
like is aged in a predetermined direction according to the kind of
liquid crystal 50 to be used, that is, according to the operation
mode such as TN (Twisted Nematic) mode, C-TN method, VA method, IPS
method, or normal white mode/normal black mode, however this is not
shown here.
[0141] Moreover, in the case where the liquid crystal display 100
is constituted for use as a color display, then on the facing
substrate 20, for example, color filters of red (R), green (G), and
blue (B) are formed with their protective films, in the regions
facing the respective pixel electrodes of the TFT array substrate
10, described later.
[0142] In the image display region of the liquid crystal display
100 having such a construction, as shown in FIG. 7, a plurality of
pixels 100a are configured in a matrix form, TFTs (switching
elements) 30 for pixel switching are formed in these respective
pixels 100a, and data lines 6a which supply pixel signals S1, S2,
to Sn, are electrically connected to the sources of the TFTs 30.
The pixel signals S1, S2, to Sn, for writing to the data lines 6a
may be line-sequential supplied in this order, or may be supplied
to each group with respect to adjacent pairs of data lines 6a.
Moreover, the configuration is such that the seaming lines 3a are
electrically connected to the gates of the TFTs 30, and scanning
signals G1, G2, to Gm are applied pulsewise to the scanning lines
3a, in this line-sequential order at a predetermined timing.
[0143] The pixel electrodes 19 are electrically connected to the
drains of the TFTs 30 so as to power ON the TFTs 30 which are the
switching elements, only in a fixed period so that the pixel
signals S1, S2, to Sn supplied from the data lines 6a can be
written into the respective pixels at a predetermined timing. In
this manner, the pixel signals S1, S2, to Sn of the predetermined
level written into the liquid crystal through the pixel electrodes
19 are retained for a fixed period be counter electrodes 121 of the
facing substrate 20 shown in FIG. 6. In order to prevent leakage of
the retained pixel signals S1, S2, to Sn, storage capacitances 60
are added in parallel to the liquid crystal capacitances formed
between the pixel electrodes 19 and the counter electrodes 121. For
example, the voltage of the pixel electrodes 19 is retained by the
storage capacitances 60 for a time which is thousands of times
longer than the time for which the source voltage is applied.
Consequently, the retention property of the electric charge can be
improved so as to realize a liquid crystal display 100 having a
high contrast ratio.
[0144] FIG. 8 is an enlarged sectional view of part of the liquid
crystal display 100 having a bottom gate type TFT 30. In the
present embodiment, the storage capacitance 60 is constructed above
the bottom gate type TFT 30 for pixel switching. More specifically,
on tie TFT array substrate 10 (corresponding to the substrate P in
the abovementioned wiring pattern forming method), a semiconductor
layer 210a is laminated via a gate insulating film 42, on a portion
of a gate electrode 203a projecting above the substrate, from the
sunning line 3a along the data line 6a. A portion of the
semiconductor layer 210a facing this gate electrode 203a portion is
a channel region. On the semiconductor layer 210a, a source
electrode 204a and a drain electrode 204b are formed from a film
identical to the data line 6a. Respectively between the source
electrode 204a and the semiconductor layer 210a, and between the
source electrode 204b and the semiconductor layer 210a, a
connection layer 205a and a connection layer 205b composed of, for
example, an n.sup.+ type a-Si (amorphous silicon) layer, are
laminated for obtaining ohmic connection. On the semiconductor
layer 210a in the center of the channel region, an insulative etch
stop film 208 for protecting the channel is formed. On the edge of
the drain electrode 204b, an insular capacitative electrode 222 is
laminated via an interlayer insulating film 212. Furthermore, on
the capacitative electrode 222, a capacitive line 3b (capacitative
electrode on the fixed potential side) is laminated via a
dielectric film 221. Moreover, the capacitative line 3b extends in
stripes in the image display region, and is provided to extend to
outside of the image display region, and then drops to a fixed
potential.
[0145] Above the storage capacitance 60, a pixel electrode 19 is
arranged. Between the capacitative line 3b and the pixel electrode
19, an interlayer insulating film 216 is laminated. The pixel
electrode 19 and the capacitative electrode 222 are connected via a
contact hole 217 opened in the interlayer insulating film 216 so
that the capacitative electrode 222 becomes the pixel electrode
potential. Moreover, a hole-shape opening 222a is provided above
the TFT 30 channel region in the capacitative electrode 222.
[0146] In The TFT of the above configuration, for example, droplets
of silver compound are discharged using the droplet discharge
apparatus IJ described above, enabling forming of the gate lines,
the source lines, and the drain lines. Therefore, it becomes
possible to obtain a high quality liquid crystal display, which can
be decreased in size and thickness due to the fine linear pattern,
and in which defects such as disconnection rarely occur.
Fourth Embodiment
[0147] In the above embodiment, the configuration is one where the
TFTs 30 are used as switching elements for driving the liquid
crystal display 100. However, besides the liquid crystal display,
for example, it may be applied to an organic EL
(electroluminescence) display device. An organic EL display device
has a configuration where a thin film containing fluorescent
inorganic or organic compounds is sandwiched between a negative
electrode and a positive electrode. It is a device in which
electrons and positive holes (holes) are injected to excite the
thin film and produce excitons, and uses the light emitted
(fluorescence, phosphorescence) when the excitons are recombined,
to generate light. Moreover, on the substrate having the TFTs 30,
of the fluorescent materials used for the organic EL display
device, materials showing the respective fluorescent colors of red,
green and blue, that is a fluorescent layer forming material, and
materials for forming the electron holes injecting/electron
transferring layer, are used for the ink, and the respective layers
are patterned so that a self-fluorescing full color EL device can
be manufactured.
[0148] The scope of the device (electro-optical apparatus) in the
present invention includes such an organic EL device, and it
becomes possible to obtain a high quality organic EL device which
can be decreased in size and thickness, and in which defects such
as disconnection rarely occur.
[0149] FIG. 9 is a sectional side view of an organic EL apparatus
in which some components are manufactured by the aforementioned
droplet discharge apparatus IJ. A general configuration of the
organic EL apparatus is described with reference to FIG. 9.
[0150] In FIG. 9, an organic EL apparatus 301 is an organic EL
element 302 comprising; a substrate 311, a circuit element section
321, pixel electrodes 331, bank sections 341, light emission
elements 351, a negative electrode 361 (counter electrode), and a
sealing substrate 371 connected to wiring of a flexible substrate
(not shown) and a driving IC (not shown). The circuit element
section 321 is an active element TFT 30 formed on the substrate
311, having a configuration such that a plurality of pixel
electrodes 331 ar arrayed on the circuit element section 321.
Moreover, a gate wiring 61 constituting the TFT 30 is formed by the
wiring pattern forming method of the above embodiment.
[0151] Between the respective pixel electrodes 331, the bank
sections 341 are formed in grid form. In a crevice opening 344
produced by the bank sections 341, a light emission element 351 is
formed. The light emission element 351 is composed of an element
which emits red fluorescence, an element which emits green
fluorescence, and an element which emits blue fluorescence.
Therefore the organic EL apparatus 301 can display in full colors.
The negative electrode 361 is formed over the whole top surface of
the bank sections 341 and the light emission elements 351. On the
negative electrode 361, the sealing substrate 371 is laminated.
[0152] The manufacturing process of the organic EL apparatus 301
including the organic EL element includes; a bank section forming
step for forming the bank sections 341, a plasma treatment step for
appropriately forming the light emission elements 351, a light
emission element forming step for forming the light emission
elements 351, a counter electrode forming step for forming the
negative electrode 361, and a sealing step for laminating the
sealing substrate 371 onto the negative electrode 361 so as to seal
it.
[0153] The light emission element forming step is one where on a
crevice opening 344, that is a pixel electrode 331, an electron
holes injecting layer 352 and a fluorescent layer 353 are formed so
as to form a light emission element 351, and includes an electron
holes injecting layer forming step and a fluorescent layer forming
step. The electron holes injecting layer forming step includes a
first discharging step for discharging a liquid material for
forming the electron holes injecting layer 352 onto the respective
pixel electrode 331, ands fiat drying step for drying the
discharged liquid material so as to form the electron holes
injecting layer 352. Moreover, the fluorescent layer forming step
comprises a second discharging step for discharging a liquid
material for forming the fluorescent layer 353 onto the electron
holes injecting layer 352, and a second drying step for drying the
discharged liquid material so as to form the fluorescent layer 353.
As described above, the fluorescent layer 353 is composed of three
kinds formed by materials corresponding to the three colors of red,
green and blue. Therefore, the second discharging step includes
three steps for respectively discharging the three kinds of
materials.
[0154] In this light emission element forming step, the droplet
discharge apparatus IJ may be used at the first discharging step in
the electron holes injecting layer forming step, and at the second
discharging step in the fluorescent layer forming step.
Fifth Embodiment
[0155] In the above embodiment, the gate wiring of TFT (thin film
transistor) is formed using the pattern forming method according to
the present invention. However, it is also possible to manufacture
other components such as the source electrode, drain electrode,
pixel electrode, and the like. Hereunder is a description of
methods for Manufacturing the TFT, with reference to FIG. 10 to
FIG. 13.
[0156] As shown in FIG. 10, firstly, on the top surface of a washed
glass substrate 510, first layer banks 511 for providing a ditch
511a of 1/20 to 1/10 times one pixel pitch, are formed based on the
photolithography method. These banks 511 should be optically
transparent and repellent after being formed. For the material in
addition to polymeric materials such as acrylic resin, polyimide
resins olefin resin, and melamine resin, inorganic material such as
polysilazane may be suitably used.
[0157] In order to give repellency to these banks 511 after being
formed, it is necessary to perform CF.sub.4 plasma treatment
(plasma treatment using a gas containing a fluorine component).
However instead, repellent components (such as fluorine group) may
be previously filled into the material itself of the banks 511. In
this case, the CF.sub.4 plasma treatment may be omitted.
[0158] It is preferable to ensure that the contact angle of the
discharge ink with respect to the banks 511 made rent in the above
manner, is above 40.degree. and the contact angle with respect to
the glass suffice is below 10.degree.. That is, from results
confirmed by examination by the present inventors, for example, a
contact angle after treatment, of conductive particles (tetradecane
solvent) can be ensured at about 54.0.degree. if an acrylic resin
or the like is used for the material of the bank 511 (below
10.degree. in the case without the treatment). This contact angle
was obtained under a treatment condition where tetrafluoromethane
gas was supplied at a flow rate of 0.1 mL/min under a plasma power
of 550 W.
[0159] In a gate scanning electrode forming step (a first
conductive pattern forming step) following the abovementioned first
layer bank forming step, by discharging droplets containing
conductive material by the inkjet to fill in the ditch 511a which
is the drawing region sectioned by the banks 511, gate scanning
electrodes 512 are formed. When forming the gate scanning
electrodes 512, the pattern forming method according to the present
invention is applied.
[0160] For the conductive material at this time, Ag, Al, Au, Cu,
Pd, Ni, W-si, and a conductive polymer may be suitably employed.
Red the gate scanning electrodes 512 formed in this manner, since
the banks 511 are previously imported with sufficient repellency, a
fine wiring pattern can be formed without overflowing beyond the
ditch 511a.
[0161] By the abovementioned steps, on the substrate 510, a first
conductive layer Al composed of silver (Ag) having a flat top
surface comprising the banks 511 and the gate scanning electrodes
512 is formed.
[0162] Moreover, in order to obtain a good result in discharging
into the ditch 511a, as shown in FIG. 10, a diverging tapered shape
(a taper shape opening in a direction towards the discharge source)
is preferably employed for the shape of the ditch 511a. Therefore,
the discharged droplets can enter sufficiently deeply inside.
[0163] Next, as shown in FIG. 11, by the plasma CVD method, a gate
insulating film 513, an active layer 521, and a contact layer 509
ane successively formed. A silicon nitride film used for the gate
insulating film 513, an amorphous silicon film used for the active
layer 521, and an n.sup.+ type silicon film used for the contact
layer 509, are formed by changing the material gas and the plasma
conditions. If they are formed by the CVD method, a heat history of
300.degree. C. to 350.degree. C. is required. However, it is
possible to avoid problems related to the transparency and the
thermal resistance by using inorganic material for the banks.
[0164] In a second layer bank forming step following the
abovementioned semiconductor layer forming step, as shown in FIG.
12, on the top surface of the gate insulating film 513, second
layer banks 514 for providing a ditch 514a of 1/20 to 1/10 times
one pixel pitch and crossing the ditch 511a, are formed based on
the photolithography method. These banks 514 should be optically
transparent and repellent after being formed. For the material, in
addition to polymeric materials such as acrylic resin, polyimide
resin, olefin resin, and melamine resin, inorganic material such as
polysilazane may be suitably used
[0165] In order to give repellency to these banks 514 after being
formed, it is necessary to perform CF.sub.4 plasma treatment
(plasma treatment using a gas containing a fluorine component).
However instead, repellent components (such as fluorine group) way
be previously filled into the material itself of the banks 514. In
this case, the CF.sub.4 plasma treatment may be omitted.
[0166] It is preferable to ensure that the contact angle of the
discharge ink with respect to the banks 514 made repellent in the
above manner, is above 40.degree..
[0167] In a source/drain electrode forming step (a second
conductive pattern forming step) following the abovementioned
second layer bank forming step, by discharging droplets containing
conductive material by the inkjet to fill in the ditch 514a which
is the drawing region sectioned by the banks 514, source electrodes
515 and source electrodes 516 crossing with respect to the gate
scanning electrode 512, are formed. When forming the source
electrodes 515 and the drain electrodes 516, the pattern fog method
according to the present invention is applied.
[0168] For the conductive material at his time, Ag, Al, Au, Cu, Pd,
Ni, W-si, and a conductive polymer may be suitably employed.
Regarding the source electrodes 515 and the drain electrodes 516
formed in this manner, since the banks 514 are previously imparted
with sufficient repellency, a fine wiring pattern can be formed
without overflowing beyond the ditch 514a.
[0169] Moreover, an insulating material 517 is positioned so as to
fill in the ditch 514a which positions the source electrodes 515
and the drain electrodes 516. By the abovementioned steps, on the
substrate 510, a flat top surface 520 comprising the banks 514 and
the insulating material 517 is formed.
[0170] Then, contact holes 519 are formed in the insulating
material 517, and patterned pixel electrodes of indium tin oxide
(ITO) 518 are formed on the top surface 520, and the drain
electrodes 516 and the pixel electrodes 518 are connected via the
contact holes 519 to thereby form the TFT.
Sixth Embodiment
[0171] FIG. 14 shows another embodiment of a liquid crystal
display.
[0172] The liquid crystal display (electro-optical apparatus) 901
show in FIG. 14 comprises in general, a color liquid crystal panel
(electro-optical panel) 902 and a circuit substrate 903 connected
to the liquid crystal panel 902. Moreover, a lighting system such
as a backlight or the like and other incidental equipment are
attached to the liquid crystal panel 902 as required.
[0173] The liquid crystal panel 902 has a pair of substrates 905a
and 905b adhered by a sealing material 904. In a space formed
between these substrates 905a and 905b, being a so called cell gap,
a liquid crystal is enclosed. These substrates 905a and 905b are
generally formed from an optically transparent material, for
example, a glass, plastics, or the like. On the outer surface of
the substrates 905a and 905b, a polarizing plate 906a and another
polar plate are adhered. In FIG. 14, the other polarizing plate is
not shown.
[0174] Moreover electrodes 907a are formed on the inner surface of
the substrate 905a and electrodes 907b are formed on the inner
surface of the substrate 905b. These electrodes 907a and 907b are
formed in stripes, letters, numeric characters, or other
appropriate patterns. Moreover, these electrodes 907a and 907b are
formed from an optically transparent material, for example such as
ITO. The substrate 905a has a projecting section which projects
from. The substrate 905b. On this projecting section, a plurality
of terminals 908 arm formed. These terminals 908 are formed at the
same time as when the electrodes 907a are formed on the substrate
905a. Therefore, these terminals 908 are formed from ITO for
example. These terminals 908 include ones integrally extending from
the electrodes 907a, and ones connected to the electrodes 907b via
a conductive material (not shown).
[0175] On the circuit substrate 903, a semiconductor element 900
serving as a liquid crystal driving IC is mounted in a
predetermined position on a wiring substrate 909. Although not
shown, on a predetermined position of an other part except for the
part mounted with the semiconductor element 900, a resistor, a
capacitor, and other chip parts may be mounted. The wiring
substrate 909 is manufactured by patterning a metal film such as Cu
formed on a flexible film shaped base substrate 911 such as a
polyimide or the like, to form a wing pattern 912.
[0176] In the present embodiment, the electrodes 907a and 907b on
the liquid crystal panel 902 and the wing pattern 912 on the
circuit substrate 903 are formed by the abovementioned method of
manufacturing a device.
[0177] According to the liquid crystal display of the present
embodiment, it becomes possible to obtain a high quality liquid cry
display which can be decreased in size and thickness, and in which
defects such as disconnection rarely occur.
Seventh Embodiment
[0178] Next as a seventh embodiment, is a description of a plasma
display device, which is another example of the electro-optical
device of the present invention.
[0179] FIG. 15 is an exploded perspective view of a plasma display
device 500 of the present embodiment.
[0180] The plasma display device 500 includes substrates 501 and
502 arranged to oppose each other, and a discharge display section
510 formed between these substrates.
[0181] The discharge display section 510 includes a plurality of
discharge chambers 516 assembled together. Of the plurality of
discharge chambers 516, three discharge chambers 516, that is, a
red discharge chamber 516 (R), a green discharge camber 516 (G),
and a blue discharge chamber 516 (B) are arranged as a set to
constitute one pixel.
[0182] On the top face of the substrate 501, address electrodes 511
are formed in stripes at predetermined intervals, and a dielectric
layer 519 is formed so as to cover the address electrodes 511 and
the top face of the substrate 501. On the dielectric layer 519, a
partition 515 is formed between the respective address electrodes
511 along the respective address electrodes 511. The partition 515
includes partitions adjacent on both sides in the width direction
of the address electrode 511, and partitions extendingly provided
in a direction orthogonal to the address electrode 511. Moreover,
the discharge chambers 516 are formed corresponding to these
rectangular regions separated by the partition 515.
[0183] Inside the rear region partitioned by the partition 515, a
fluorescent substance 517 is arranged. The fluorescent substance
517 emits one of red, green and blue fluoresce. The red fluorescent
substance 517 (R) is arranged at the base of the red discharge
chamber 516 (R), the green fluorescent substance 517 (G) is
arranged at the base of the green discharge chamber 516 (G), and
the blue fluorescent substance 517 (B) is arranged at the base of
the blue discharge chamber 516 (B) respectively.
[0184] On the other hand, a plurality of display electrodes 512 are
formed in stripes at predetermined intervals in a direction
orthogonal to the above address electrodes 511. Furthermore, a
dielectric layer 513 and a protective film 514, made of MgO, are
formed to cover them.
[0185] The substrate 501 and substrate 502 are opposingly adhered
so that the address electrodes 511 and the display electrodes 512
are orthogonal to each other,
[0186] The address electrodes 511 and display electrodes 512 are
connected to an AC power supply (not shown). Power is supplied to
the respective electrodes so that the fluorescent substances 517
are excited and emit light in the discharge display sections 510,
enabling color display.
[0187] In the present embodiment, since the address electrodes 511
and the display electrodes 512 ae respectively formed based on the
abovementioned wiring pattern forming method, it becomes possible
to obtain a high quality plasma display device which can be
decreased in size and thickness, and in which defects such as
disconnection rarely occur.
Eighth Embodiment
[0188] Next, as an eighth embodiment, an embodiment of a
non-contact card medium is described.
[0189] As shown in FIG. 16, the non-contact card medium (electronic
apparatus) 400 according to the present embodiment has a
semiconductor integrated circuit chip 408 and an antenna circuit
412 built into a body comprised of a card body 402 and card cover
418, and performs at least one of power supply and data transfer
with an external transmitter (not shown) by at least one of
electromagnetic waves and electric capacitance coupling.
[0190] In the present embodiment, the antenna circuit 412 is formed
by the wiring pattern forming method according to the
abovementioned method.
[0191] According to the non-contact card medium of the present
embodiment, it becomes possible to obtain a high quality
non-contact card medium display device, which can be decreased in
size, and in which defects such as disconnection rarely occur.
[0192] The device (electro-optical apparatus) according to the
present invention is also applicable, in addition to the
abovementioned devices, to a surface-conduction-type electron
emission element or the like which utilize a phenomenon where
current flows in parallel with the surface of a small sized thin
film formed on a substrate so as to cause electron emission.
Ninth Embodiment
[0193] Detailed examples of electronic apparatuses of the present
invention are described as a ninth embodiment.
[0194] FIG. 17A is a perspective view showing an example of a
portable telephone. In FIG. 17A, reference symbol 600 denotes a
portable telephone main unit, and reference symbol 601 denotes a
liquid crystal display section comprising a liquid crystal
display.
[0195] FIG. 17B is a perspective view showing an example of a
portable information processing device, such as a word processor
and personal computer n FIG. 17B, reference symbol 700 denotes an
information processing a device, reference symbol 701 denotes an
input section such as a keyboard, reference symbol 703 denotes an
information processor main unit, and reference symbol 702 denotes a
liquid crystal display section comprising the liquid display of the
above embodiment.
[0196] FIG. 17C is a perspective view showing an example of watch
type electronic apparatus. In FIG. 17C, reference symbol 800
denotes a watch main unit, and reference symbol 801 denotes a
liquid crystal display section comprising the liquid crystal
display of the above embodiment.
[0197] Since the electronic apparatus shown in FIG. 17A to FIG. 17C
include liquid crystal displays of the above embodiment, it becomes
possible to decease the size and thickness, and increase
quality.
[0198] The electronic apparatus of the present embodiment comprise
liquid crystal devices. However they may be electronic apparatus
comprising another electro-optical apparatus such as an organic
electroluminescence display device, a plasma display device, or the
like.
[0199] As mentioned above, while preferred embodiments have been
described and illustrated above, it should be understood that these
are exemplary of the invention and are not to be considered as
limiting. The forms and the combinations of respective components
shown in the examples, are but one example and may be variously
modified according to design requirement or the like, without
departing from the spirit or scope of the present invention.
[0200] For example, plasma treatment was performed to make the
banks repellent. However as described above, the construction may
be such that the banks are formed from a material containing
fluorine or a fluorine component. Moreover, the construction may be
such that a treatment other than the plasma treatment is
performed.
[0201] Furthermore, in the above embodiments, the construction was
such that droplets having a diameter larger than the width of the
ditch section were discharged. However the construction is not
limited to this and may be such that the width of the ditch section
is larger.
[0202] Moreover, in the above embodiments, the contact angle with
respect to the coating region H1 on the substrate P was below
15.degree.. However the angle is not limit to this and may be any
angle as long as the difference between the contact angle with
respect to the repellent region H2 and the contact angle with
respect to the coating region H1 is above 40.degree..
[0203] While preferred embodiments of the invention have been
described and illustrated above, it should be understood that these
are exemplary of the invention and are not to be considered as
limiting. Additions, omissions, substitutions, and other
modifications can be made without departing from the spirit or
scope of the present invention. Accordingly, the invention is not
to be considered as being limited by the foregoing description, and
is only limited by the scope of the appended claims.
* * * * *