U.S. patent application number 10/883707 was filed with the patent office on 2006-01-12 for thermoelectric heat dissipation device and method for fabricating the same.
Invention is credited to Michael Lin, Charles Ma, Jack Wang.
Application Number | 20060005944 10/883707 |
Document ID | / |
Family ID | 35540102 |
Filed Date | 2006-01-12 |
United States Patent
Application |
20060005944 |
Kind Code |
A1 |
Wang; Jack ; et al. |
January 12, 2006 |
Thermoelectric heat dissipation device and method for fabricating
the same
Abstract
A method for fabricating a thermoelectric heat dissipation
device including the steps of providing a base plate, a
thermoelectric semiconductive element connected to the base plate
and a heat sink in form of plates or fins with one surface coated
an electric insulation coating and patterned conductive lines, and
adhering the heat sink to the thermoelectric semiconductive
element. Accrodingly, the thermoelectric heat dissipation device is
provided including the theremoelectric semiconductive element as a
cryogenic chip and the heat sink. The cooling surface of the
cryogenic chip is directly electrically connected to the heat sink
which is in form of plates or fins, and the other surface of the
cryogenic chip is adhered to the base plate. The base plate of the
device is utilized to connect with the surface of an electronic
component for heat transfer.
Inventors: |
Wang; Jack; (Taoyuan City,
TW) ; Lin; Michael; (Taoyuan City, TW) ; Ma;
Charles; (Taoyuan City, TW) |
Correspondence
Address: |
Yi-Wen Tseng
4331 Stevens Battle Lane
Fairfax
VA
22033
US
|
Family ID: |
35540102 |
Appl. No.: |
10/883707 |
Filed: |
July 6, 2004 |
Current U.S.
Class: |
165/80.3 |
Current CPC
Class: |
H01L 35/32 20130101 |
Class at
Publication: |
165/080.3 |
International
Class: |
F28F 7/00 20060101
F28F007/00 |
Claims
1. A method for fabricating a thermoelectric heat dissipation
device, comprising: providing a base plate having one surface
patterned with a plurality of first conductive lines; providing a
heat sink having one surface patterned with a plurality of second
conductive lines; and adhering a thermoelectric semiconductive
element to be sandwiched between the base plate and the heat sink
so that a plurality of P-N posts of the thermoelectric
semiconductive element are electrically connected with the first
and the second conductive lines, respectively.
2. The method as claimed in claim 1, wherein the step of providing
the base plate further including providing the base plate made of
ceramic material with heat conductivity but electrically
insulated.
3. The method as claimed in claim 1, wherein the adhering step
further comprising adhering a cooling end of the thermoelectric
semiconductive element to the base plate.
4. The method as claimed in claim 1, wherein the adhering step
further comprising adhering a heat dissipation end of the
thermoelectric semiconductive element to the heat sink.
5. The method as claimed in claim 1, wherein the step of providing
the including providing the heat sink made of material with heat
conductivity but electrically insulated.
6. The method as claimed in claim 1, wherein the step of providing
the heat sink including providing the heat sink made of a metal
with high heat conductivity, and the surface of the heat sink
utilized to adhere to the thermoelectric semiconductive element is
coated with an anodic coating,
7. A thermoelectric heat dissipation device comprising: a
thermoelectric semicondutive element; a base plate with a plurality
of first conductive lines patterned on one surface thereof so as to
be adhered to one end of the semiconductive element; and a heat
sink with a plurality of conductive lines patterned on one surface
thereof so as to be stacked on the other end of the thermoelectric
semiconductive element.
8. The thermoelectric heat dissipation device as claimed in claim
7, wherein the thermoelectric semiconductive element includes a
plurality of P-N posts for electrically connecting with the second
conductive lines when the heat sink stacked thereon.
9. The thermoelectric heat dissipation device as claimed in claim
7, wherein the heat sink comprises a plate and a plurality of
fins.
10. The thermoelectric heat dissipation device as claimed in claim
7, wherein the heat sink is in a form of plate construction with an
upper plate and a bottom plate.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention is related to a thermoelectric heat
dissipation device and a method for fabricating the thermoelectric
heat dissipation device. More particularly, the present invention
is related to a thermoelectric heat dissipation device including a
combination of a cryogenic chip and a heat sink in form of fins or
flat plates and a method for fabricating the heat dissipation
device.
[0002] The technology of electronic components is developed very
fast, especially, the main component of a computer, central
processing unit (CPU). The size of CPU is tended to miniaturize but
the performance and the efficiency thereof is progressed. Due to
the miniaturization of CPU, the heat generated from the power
consumption when the CPU is operating is rapidly accumulated so as
to increase the temperature of the CPU. Thus, if the heat is not
adequately removed from the CPU, the CPU is overheated to levels
that degrade the life and reliability of the computer, or worse to
crash the CPU. Thus, heat dissipation of CPU is a significant issue
during the operation of computers.
[0003] One of the heat dissipation devices on the market is
utilization of a fan to couple to the enclosure of electronic
apparatus. This heat dissipation device is designed to exhaust the
hot air from the enclosure of the apparatus in order to replenish
it with fresh air. Thus, the heat generated from the operation of
the electronic components in the enclosure of an electronic
apparatus will be dissipated. However, the efficiency of the heat
dissipation of this kind of one-way fan is not satisfied because
the environment temperature may not be lower than the interior
temperature in the enclosure of an electronic apparatus, such as in
summer time, the room temperature is high as 35 centigrade degrees.
Thus, utilization of one-way fan for air-convection with
high-temperature fresh air is inefficient, because the electronic
components are still operated in an environment with high
temperature. The efficiency cannot be improved by adding one-way
fans to the apparatus.
[0004] Another one commercial heat dissipater for removing the heat
generated from the electronic component is a device combined a base
and a heat sink. The heat sink is coupled to the surface of the
electronic components via the base for heat transfer. The heat is
conducted via the heat sink and then transferred to the
environment. A fan can be added to the heat sink to improve the
efficiency of the heat transfer of the heat sink.
[0005] There is another one commercial electric heat dissipation
device. As shown in FIG. 1, this kind of commercial heat
dissipation device includes a cryogenic chip for heat exchange. A
heat conducting surface is integrated with an afore-mentioned heat
dissipation device. The heat generated from the electronic
components is exchanged by the cryogenic chip to the surface of the
heat conduct surface, and then is transferred to the integrated
heat dissipation device. The heat thus is dissipated by the heat
dissipation device or an additional fan. However, the cryogenic
chip of the electronic heat dissipation device is consisted of an
upper ceramic plate, a bottom ceramic plate and a P-N
semiconductive material electric coupled therebetween. The heat
conductivity of the ceramic material is lower than metal or a high
heat conductivity material. Besides, because the heat is indirectly
transferred from the plate to the heat dissipation device, the
efficiency of heat conductivity of the electronic heat dissipation
device is unsatisfied.
BRIEF SUMMARY OF THE INVENTION
[0006] The present invention is to provide a method for fabricating
a thermoelectric heat dissipation device. The method includes the
steps of providing a base plate, a thermoelectric semiconductive
element connected to the base plate and a heat sink in form of
plates or fins with one surface coated an electric insulation
coating and patterned conductive lines, and adhering the heat sink
to the thermoelectric semiconductive element. This thermoelectric
heat dissipation device conducts the heat dissipation by direct
heat transfer.
[0007] The present invention is further to provide a thermoelectric
heat dissipation device. The present device includes a
theremoelectric semiconductive element as a cryogenic chip and a
heat sink. The cooling surface of the cryogenic chip is directly
electrically connected to the heat sink which is in form of plates
or fins, and the other surface of the cryogenic chip is adhered to
a base plate. The base plate of the device is utilized to connect
to the surface an electronic component for heat exchange.
[0008] Because the heat sink of the thermoelectric heat dissipation
device is directly connected to the heat dissipating surface of the
thermoelectric semiconductive element for transferring the heat
exchanged from the electronic component to the semiconductive
element, the efficiency of heat dissipation of the device is
enhanced and the cost thereof is lowered compared with the prior
thermoelectric device.
[0009] These and other objectives of the present invention will
become obvious to those of ordinary skill in the art after reading
the following detailed description of preferred embodiments.
[0010] It is to be understood that both the foregoing general
description and the following detailed description are exemplary,
and are intended to provide further explanation of the invention as
claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] These as well as other features of the present invention
will become more apparent upon reference to the drawings
therein:
[0012] FIG. 1 is a perspective view of a conventional structure of
a cryogenic chip and a heat sink;
[0013] FIG. 2 is a cross-sectional view of a base plate of the
embodiment of the present invention;
[0014] FIG. 3 is a cross-sectional view of a base plate and a
thermoelectric semiconductive element combined according to the
embodiment of the present invention;
[0015] FIG. 4 is a cross-sectional view of a heat sink of the
embodiment of the present invention; and
[0016] FIG. 5 is a cross-sectional view of the assembly of a heat
sink and a thermoelectric semiconductive element of the embodiment
of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0017] Reference will now be made in detail to the preferred
embodiments of the present invention, examples of which are
illustrated in the accompanying drawings. Wherever possible, the
same reference numbers are used in the drawings and the description
to refer to the same or like parts.
[0018] FIGS. 2 to 5 are shown a preferred embodiment of the present
invention to fabricate a thermoelectric heat dissipation device.
The process of the present invention includes the step of providing
a base plate 1. The upper surface of the base plate 1 is patterned
a plurality of conductive lines 41 for connecting with a
thermoelectric semiconductive element 2 and providing the
electrical connection of multiple P-N posts of semiconductive
material 21 and 22, as shown in FIG. 1. The upper surface is
utilized to connect the thermoelectric semiconductive element
2.
[0019] The thermoelectric element 2 is connected to one surface of
the base plate 1 by a cooling surface 23 thereof, as shown in FIG.
3. Such that, the patterned conductive lines 41 is further
electrically connected to a plurality of sets of P-N posts 21, 22
of the semiconductive element 2.
[0020] Furthermore, a heat conductive element 3 is provided. The
heat conductive element 3 is made of material with high heat
conductivity but without electric conductivity. In a preferred
embodiment, the heat conductive element 3 can be made of a metal
with high heat conductivity. The surface 31 of the heat conductive
element 3 for combining with the thermoelectric semiconductive
element 2 is coated an inert coating 33, such as an anodic coating.
Thus, the coating 31 is heat conductive but is not electric
conductive, as shown in FIG. 4. In a prefer embodiment of the
present invention, the conductive element 3 includes the surface 31
patterned a plurality of conductive lines 42, as shown in FIG. 4.
The conductive lines 42 are utilized to connect to the
thermoelectric semiconductive element 2 and to provide the
electrical connection between P-N posts 21 and 22 of the
semiconductive material.
[0021] The surface 31 of the heat conductive element 3 with the
patterned conductive lines 42 is combined to the top surface 24 of
the thermoelectric element 2. The P-N posts of the semiconductive
material are electrically connected to the surface 31 via the
patterned lines 42, as shown in FIG. 5.
[0022] According to the above description, a thermoelectric heat
dissipation device is fabricated, as shown in FIG. 5. The heat
dissipation device includes the thermoelectric semiconductive
element 2 as a cryogenic chip and a heat sink 3. The thermoelectric
heat dissipation device is connected with an electronic component
via base plate 1 thereof. Thus, the heat generated from the
electronic components can be exchanged from the base plate 1 to the
top of the thermoelectric semiconductive element 2 and then
transferred to the heat sink 3 for heat dissipation. Accordingly,
the heat can be directly transferred and dissipated to enhance the
efficiency of the cryogenic chip. Moreover, in a preferred
embodiment, the heat sink 3 can be directly adhered to the top
surface 24 of the thermoelectric semiconductive element 2.
Comparing with the utilization of conventional cryogenic chip, no
heat dissipation plate is needed to combine the heat sink 3 and the
semicoductive element 2. Thus, the dissipation device of the
present invention is less costly and the fabrication thereof is
less complicated.
[0023] A thermoelectric heat dissipation device fabricated by the
above method is described hereinafter. The construction of the
thermoelectric heat dissipation device is shown in FIGS. 2 to 5, as
a preferred embodiment.
[0024] FIG. 5 shows a thermoelectric heat dissipation device. The
device includes a thermoelectric semicondutive element 2, a base
plate 1 for adhering to the semiconductive element 2, and a heat
sink 3 connected to the thermoelectric semiconductive element 2.
The base plate 1 provides a surface to adhere the thermoelectric
semiconductive element 2, as shown in FIG. 2. The base plate 1 is
made by the material with heat conductivity but without electric
conductivity. In the embodiment shown in FIG. 2, the base late 1 is
preferably made of ceramic material. The base plate 1 is molded in
a form of a plate. Thus, two surfaces are provided. The upper
surface is utilized to be as an adhering surface for connecting the
thermoelectric semiconductive element 2 and be patterned a
plurality of conductive lines 41 for electrically connecting the
P-N posts 21, 22 of the element 2.
[0025] The thermoelectric semiconductive element 2 includes a
plurality of sets of P-N posts 21, 22. The element 2 is so called a
cryogenic chip. For heat change, the P-N posts 21, 22 are able to
absorb the heat from one end and transfer the heat to the other end
under electricity. In a preferred embodiment, the thermoelectric
seminconductive element 2 includes a cooling end 23 for adhere to
the surface of the base plate 1 and a dissipation end 24.
[0026] The heat sink 3, in a preferred embodiment, is made from
material with high heat conductivity but is electrically insulated.
In another embodiment, as shown in FIG. 4, the heat sink is made
from metal with high heat conductivity. When the heat sink 3 is
made from metal, the surface 31 for adhering to the thermoelectric
semiconductive element 2 should be coated an inert coating 33, such
as anodic coating, for electric insulation.
[0027] The heat sink 3 described hereinbefore, as shown in FIG. 4,
can be molded as a construction consisting of surface 31 and fins
32. Optionally, the heat sink 3 can further includes an upper
plate. The surface 31 of the heat sink 3 is able to adhere with the
thermoelectric semiconductive element 2. As shown in FIG. 4, a
plurality of electric lines 42 are patterned on the surface 31 for
electrically connecting with the P-N posts 21, 22 of the
thermoelectric semiconductive element.
[0028] The thermoelectric heat dissipation device fabricated by the
method describe herein is able to enhance the efficiency of heat
dissipation when comparing with the combination of cryogenic chip
and heat sink of prior art because the heat sink 3 is directly
adhered to the heat dissipation surface 24 of the thermoelectric
semiconductive element 2 for heat exchange the heat from the
surface 24 to heat sink 3.
[0029] While an illustrative and presently preferred embodiment of
the invention has been described in detail herein, it is to be
understood that the inventive concepts may be otherwise variously
embodied and employed and that the appended claims are intended to
be construed to include such variations except insofar as limited
by the prior art.
* * * * *