U.S. patent application number 11/215988 was filed with the patent office on 2005-12-29 for active termination control.
This patent application is currently assigned to Micron Technology, Inc.. Invention is credited to Janzen, Jeffery W..
Application Number | 20050286317 11/215988 |
Document ID | / |
Family ID | 32302356 |
Filed Date | 2005-12-29 |
United States Patent
Application |
20050286317 |
Kind Code |
A1 |
Janzen, Jeffery W. |
December 29, 2005 |
Active termination control
Abstract
A method and apparatus are provided for active termination
control in a memory by an module register providing an active
termination control signal to the memory. The module register
monitors a system command bus for read and write commands. In
response to detecting a read or write command, the module register
generates an active termination control signal to the memory. The
memory turns on active termination based on information programmed
into one or more mode registers of the memory. The memory maintains
the active termination in an on state for a predetermined time
based on information programmed into one or more mode registers of
the memory.
Inventors: |
Janzen, Jeffery W.;
(Meridian, ID) |
Correspondence
Address: |
SCHWEGMAN, LUNDBERG, WOESSNER & KLUTH
1600 TCF TOWER
121 SOUTH EIGHT STREET
MINNEAPOLIS
MN
55402
US
|
Assignee: |
Micron Technology, Inc.
|
Family ID: |
32302356 |
Appl. No.: |
11/215988 |
Filed: |
August 31, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11215988 |
Aug 31, 2005 |
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10383939 |
Mar 7, 2003 |
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60427917 |
Nov 20, 2002 |
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Current U.S.
Class: |
365/49.18 |
Current CPC
Class: |
G06F 13/4086
20130101 |
Class at
Publication: |
365/189.01 |
International
Class: |
G11C 008/00 |
Claims
What is claimed is:
1. A memory comprising: an active termination control port to
receive an active termination control signal; control logic coupled
to the active termination control port; and an active termination
operatively coupled to the control logic, wherein the control logic
includes timing circuitry to turn on and to turn off the active
termination.
2. The memory of claim 1, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits defining an enable and a
disable of the active termination.
3. The memory of claim 1, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits to select one of multiple
active termination values.
4. The memory of claim 3, wherein the one or more bits include one
or more bits to select a 75 ohm termination value or a 150 ohm
termination value.
5. The memory of claim 1, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits to select a single slot or a
dual slot system.
6. The memory of claim 5, wherein one or more bits that select a
single slot system enables the memory to ignore a received active
termination control signal.
7. The memory of claim 1, wherein the control logic includes a
timing circuit to turn on the active termination at a predetermined
time after an active termination control signal is received at the
active termination control port.
8. The memory of claim 7, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits defining a CAS latency and a
burst length.
9. The memory of claim 8, wherein the timing circuit of the control
logic is configured to use the bits defining the CAS latency to set
a turn on time for the active termination.
10. The memory of claim 9, wherein the one or more mode registers
includes one or more bits defining an additive latency.
11. The memory of claim 10, wherein the timing circuit of the
control logic is configured to use the bits defining the CAS
latency and the bits defining an additive latency to set a turn on
time for the active termination at the CAS latency minus two clock
cycles plus the additive latency.
12. The memory of claim 8, wherein the control logic includes a
timing circuit to turn off the active termination at a
predetermined time after turning the active termination device
on.
13. The memory of claim 12, wherein the timing circuit of the
control logic is configured to use the bits defining the burst
length to set a turn off time for the active termination.
14. The memory of claim 13, wherein the timing circuit of the
control logic is configured to use the bits defining the burst
length to set a turn off time for the active termination at a burst
length divided by two plus one and one-half a clock cycle after
turning on the active termination.
15. The memory of claim 1, wherein the memory includes a mode
register to hold one or more bits defining a CAS latency and a
burst length and an extended mode register to hold one or more bits
defining an enable and a disable of the active termination.
16. The memory of claim 1, wherein the one or more memory devices
includes a double data random access memory.
17. The memory of claim 1, wherein the one or more memory devices
is configured as integrated circuit with connections to couple to a
processor.
18. An integrated circuit comprising: a plurality of input command
ports; one or more clock ports for receiving clock signals; an
active termination control port to receive an active termination
control signal; control logic coupled to the active termination
control port, the control logic coupled to the plurality of input
command ports and one or more clock ports for decoding read and
write commands; and an active termination operatively coupled to
the control logic, wherein the control logic includes timing
circuitry to turn on and to turn off the active termination.
19. The integrated circuit of claim 18, wherein the memory includes
one or more mode registers coupled to the control logic, the one or
more mode registers including one or more bit locations to select
either a 75 ohm termination value or a 150 ohm termination
value.
20. The integrated circuit of claim 18, wherein the control logic
includes a timing circuit to turn on the active termination at a
predetermined time responsive to an active termination control
signal received at the active termination control port.
21. The integrated circuit of claim 18, wherein the integrated
circuit includes one or more mode registers coupled to the control
logic, the one or more mode registers having one or more bits
defining information for turning on the active termination and for
turning off the active termination.
22. The integrated circuit of claim 18, wherein the integrated
circuit includes ports to couple an external address bus to the
control logic.
23. The integrated circuit of claim 18, wherein the integrated
circuit includes a double data random access memory.
24. A system comprising: a controller; a memory device coupled to
the controller, the memory device including: an active termination
control port to receive an active termination control signal;
control logic coupled to the active termination port; and an active
termination operatively coupled to the control logic, wherein the
control logic includes timing circuitry to turn on and to turn off
the active termination.
25. The system of claim 24, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits to select multiple active
termination values.
26. The system of claim 24, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits to select a single slot or a
dual slot system, wherein one or more bits that selects a single
slot system enables the memory to ignore a received active
termination control signal.
27. The system of claim 24, wherein the control logic includes
timing circuit to turn on the active termination at a predetermined
time after an active termination control signal is received at the
active termination control port.
28. The system of claim 24, wherein the memory includes one or more
mode registers coupled to the control logic, the one or more mode
registers including one or more bits defining a CAS latency and a
burst length.
29. The system of claim 28, wherein the control logic includes a
timing circuit configured to use the bits defining the CAS latency
to set a turn on time for the one active termination device.
30. The system of claim 28, wherein the control logic includes a
timing circuit configured to use the bits defining the burst length
to set a turn off time for the one active termination device.
31. The system of claim 24, wherein the controller includes a
processor.
32. The system of claim 24, wherein the memory device includes a
double data random access memory.
33. The system of claim 24, wherein the system includes an
information handling system.
34. The system of claim 24, wherein the information handling system
includes a computer system.
Description
RELATED APPLICATIONS
[0001] The present application is a divisional of U.S. application
Ser. No. 10/383,939, filed Mar. 7, 2003; which claims priority to
U.S. Provisional Application No. 60/427,917, filed Nov. 20, 2002;
each of which is incorporated herein by reference.
FIELD OF THE INVENTION
[0002] The present invention relates to memory devices. In
particular it relates to active termination control following read
and write commands in memory devices.
BACKGROUND OF THE INVENTION
[0003] Many electronic systems employ controllers and memory
devices that send information back and forth among each other.
Typically, the information is transmitted on one or more system
buses. These buses act as transmission lines. Consequently, these
buses require designs that consider signal reflections associated
with devices coupled to a transmission line. Typically,
transmission lines are terminated using a resistor coupled between
the transmission line and a power supply node.
[0004] For electronic systems, such as computers, termination is
provided by external resistors that are often located on the
motherboard of the computer. An external resistor having an
impedance that matches the impedance of the transmission line is
selected to terminate a transmission line such as the
interconnection signal lines of buses connecting a plurality of
integrate circuits. When the external resistance matches the
resistive component of the transmission line impedance, there is
little or no signal reflection. However, external resistors for all
the signal lines located on system boards use a large amount of
area on these boards.
[0005] As an alternative to external resistors, on chip termination
or on die termination, also known as active termination, can be
used on the integrated circuits of the system. Using on chip
termination requires additional interconnection between the devices
of the system such as the controllers and the memories. This
additional interconnection also requires that the controllers and
other devices of the system use additional pin connectors. The
amount of additional connection lines and pin connections on the
various devices depends on the overall design for providing on chip
termination.
[0006] What is needed is a means of providing control of active
termination control that is flexible and does not require the
addition of a larger number of pin connections for an electronic
system.
SUMMARY OF THE INVENTION
[0007] A solution to the problems as discussed above is addressed
in the present invention. A method and apparatus are provided for
active termination control in a memory by an module register
providing an active termination control signal to the memory. The
module register monitors a system command bus for read and write
commands. In response to detecting a read or write command, the
module register generates an active termination control signal to
the memory. The memory turns on active termination based on
information programmed into one or more mode registers of the
memory. In one embodiment, the memory column address strobe (CAS)
latency is used to determine a turn on time, and the memory burst
length (BL) is used to determine a turn off time following the turn
on of the active termination. The turn on time is set at the CAS
latency minus a number of clock cycles. After the active
termination is turned on, it is maintained on for a length of time
set equal to about a number of cycles equal to BL/2 for a Double
Data Random Access Memory (referred to as DDR) plus one and
one-half clock cycles. For a memory that reads and writes one data
bit per cycle, the active termination is maintained on for a length
of time set equal to about the number of cycles equal to the BL of
the memory.
[0008] These and other embodiments, aspects, advantages, and
features of the present invention will be set forth in the
description that follows, and in part will become apparent to those
skilled in the art by reference to the following description of the
invention and referenced drawings or by practice of the invention.
The aspects, advantages, and features of the invention are realized
and attained by means of the instrumentalities, procedures, and
combinations particularly pointed out in the appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 shows an embodiment of a information handling system
including a computer system having a controller coupled to memory
modules, in accordance with the teachings of the present
invention.
[0010] FIG. 2 shows an embodiment of a system having a controller
coupled to memory modules, in accordance with the teachings of the
present invention.
[0011] FIG. 3 shows an embodiment of a module register having a
decoding circuit, a plurality of input command ports, chip select
ports, and active termination port for outputting an active
termination control signal, in accordance with the teachings of the
present invention.
[0012] FIG. 4 shows an embodiment of a decoding circuit of a module
register having an active termination control port for outputting
an active termination control signal based on signals received on
chip select ports and a plurality of input command ports, in
accordance with the teachings of the present invention.
[0013] FIG. 5 shows an embodiment of a memory including a control
logic coupled to an active termination control port for receiving
an active termination control signal and coupled to an active
termination, in accordance with the teachings of the present
invention.
[0014] FIG. 6 shows an embodiment of an extended mode register
having bit locations, which provide information for active
termination control, in accordance with the teachings of the
present invention.
[0015] FIG. 7 shows an embodiment of a mode register using bit
locations, which provide information for active termination
control, in accordance with the teachings of the present
invention.
[0016] FIG. 8 shows a flow diagram of an embodiment for a method
for active termination control, in accordance with the teachings of
the present invention.
[0017] FIG. 9 shows a flow diagram of another embodiment for a
method for active termination control, in accordance with the
teachings of the present invention.
[0018] FIG. 10 shows a flow diagram of another embodiment for a
method for extending active termination control, in accordance with
the teachings of the present invention.
[0019] FIG. 11 shows a timing diagram for a write operation to
memories with a CAS latency of three and burst length of four in an
embodiment of a method for active termination control, in
accordance with the teachings of the present invention.
[0020] FIG. 12 shows a timing diagram for a read operation in
memories with a CAS latency of three and burst length of four in an
embodiment of a method for active termination control including
extending active termination control, in accordance with the
teachings of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0021] In the following detailed description of the preferred
embodiments, reference is made to the accompanying drawings which
form a part hereof, and in which is shown by way of illustration,
specific embodiments in which the inventions may be practiced.
These embodiments are described in sufficient detail to enable
those skilled in the art to practice the invention, and it is to be
understood that other embodiments may be utilized and that process,
electrical, or mechanical changes may be made without departing
from the scope of the present invention. The following detailed
description is, therefore, not to be taken in a limiting sense, and
the scope of the present invention is defined only by the appended
claims and their equivalents.
[0022] System
[0023] FIG. 1 shows an embodiment of a information handling system
100 including a computer system 110 having a controller 120 coupled
to memory modules 130, 140, in accordance with the teachings of the
present invention. Controller 120 is coupled to memory modules 130,
140 by, among other paths, a command bus 150. Memory modules 130,
140 include one or more memory devices with active termination
designed within each memory device. Further, information handling
system 100 can also include a keyboard 160, a mouse 170, and a
monitor 180 coupled to computer system 110 to receive inputs from
and display information to system users.
[0024] FIG. 2 shows an embodiment of a system 200 having a
controller 220 coupled to memory modules 230, 250, in accordance
with the teachings of the present invention. In the embodiment of
FIG. 2, memory module 230 includes a module register 232 and memory
devices 234-241, where module register 232 is coupled to each of
the memories 234-241 via a plurality of lines 245. Similarly,
memory module 250 includes a module register 252 and memory devices
254-261. Module register 252 is coupled to each of the memories
254-261 via a plurality of lines 265. Further, module register 232
on memory module 230 and module register 252 on memory 250 are
coupled to a common command bus that is a system command bus 260
for system 200 to which controller 220 is also coupled. In addition
to system command bus 260, controller 220 is coupled to module
register 232 via a chip select (CS#0) line 262 and a CS#1 line 264,
and is coupled to module register 252 via a CS#2 line 266 and a
CS#3 line 268. As can be appreciated that those skilled in the art,
system 200 includes other elements, other buses, and communication
paths among the elements, which are not shown. The figures focus on
those elements for understanding the various embodiments according
to the teachings of the present invention.
[0025] Module register 232 operates like a buffer on the module
that re-drives the control signals from system control bus 260 to
the eight memory devices 234-241 on module 230. The address and
controls are routed into module register 232, and then are
re-clocked to memory devices 234-241 on the next clock cycle. As a
result, heavier loads can be placed on the system bus 260 without
making the address and control lines too heavily loaded. Other
embodiments include 16, 32, or 36 memory devices on a single memory
module. The number of memory devices varies usually to higher
density memory modules. Module register 232 is coupled to the
memory devices 234-241 via control lines 245 that are coupled to
each memory device providing such signals as row address strobe
(RAS), CAS, and write enable (WE). Other signals such as CS and
clock enable (CKE) have separate lines from the register module
232. Memory devices 234-241 primarily monitor their chip selects
inputs to determine if a read or a write is occurring for the given
memory device. Further, each memory device 234-241 is provided with
an active termination, rather than having termination on the mother
board.
[0026] Module register 232 is coupled to controller 220 by CS#0
line 262 and CS#1 line 264. Module register 252 is configured like
module register 232, but coupled to controller by CS#2 line 266 and
CS#3 line 268. This configuration is used to access two groups of
memory devices at different times, with one group typically on one
side of the memory module 230 and the other group on the other side
of memory module 230. Such a configuration is said to be of rank
two. However there are modules that are double sided that only have
one chip select, and hence are of rank one. The rank of the module
determines how while reading or writing to the memory devices, the
signals are terminated. For a rank of one, in some embodiments a
memory device terminates itself. For a two module system, if the
write or read operation is to module one, then module two is the
module that actually terminates. As a result, both module register
232 of memory module 230 and module register 252 of memory module
250 monitors the system control bus 260 for read and write
commands, so that each memory module 230, 250 is provided with
information regarding the read/write activities of each other to
facilitate correct termination.
[0027] Module Register
[0028] FIG. 3 shows an embodiment of a module register 300 having a
decoding circuit 302, a plurality of input command ports 304, 306,
308, 310, 312, chip select ports 314, 316, and an active
termination port 320 for outputting an active termination control
(ATC) signal, in accordance with the teachings of the present
invention. Clock signal (CLK) and inverted clock signal (CLK#) are
received at ports 304, 306, respectively. Inverted row address
strobe (RAS#), inverted column address strobe (CAS#), and inverted
write enable (WE#) signals are received at ports 308, 310, and 312,
respectively, while CS0# and CS1# signals are received at ports
314, and 316, respectively. Module register 300 re-clocks these
signals and drives out CLK, CLK#, RAS#, CAS#, WE#, CS0#, and CS1#
signals from ports 322, 324, 326, 328, 330, 332, and 334,
respectively, to memory devices to which it is coupled. In addition
to re-clocking and driving control signals to memory devices,
module register 300 provides a means for controlling active
termination of the memory device to which it is coupled.
[0029] Decoding circuit 302 uses the control signals received from
a system command bus to monitor whether a read or write command has
been received by any memory module coupled to the same system
command bus. Upon detecting a write or read command, decoding
circuit 302 provides an ATC signal at port 320. If a write command
is decoded, the ATC signal is provided from port 320 coincident
with a write command being issued on a memory module. If a read
command is decoded, the ATC signal is provided from port 320 one
cycle after a read command issues on a memory module. Module
register 300 monitors the system bus and then issues the active
termination control to the memory devices. As a result, there are
not additional pins on the module or on the chip set. Using module
register 300 with one port, or pin, on each memory device
eliminates the need for ATC ports on each memory module and ATC
ports on a controller coupled to each memory module. Module
register 300 watches the system command bus and controls the
signals to the memory devices to which it is coupled, providing
control of the ATC signal.
[0030] FIG. 4 shows an embodiment of a decoding circuit 400 of a
module register having an active termination port 402 for
outputting an active termination control signal based on signals
received on chip select ports 404, 406 and a plurality of input
command ports 408, 410, 412, 414, and 416, in accordance with the
teachings of the present invention. CLK and CLK # received at ports
416 and 414, along with WE#, CAS#, and RAS# received at ports 408,
410, and 412, respectively, are input signals for decoding circuit
400, which decodes commands to memory devices selected. CS1# or
CS0# at ports 404, 406, respectively, are used in logic circuits to
enable an output ATC signal, or pulse. For a two module system,
CS0# and CS1# enable the output of the ATC signal on one memory
module, while on the other memory module memory devices are
selected for read and write operations.
[0031] Decoding circuit 400 is a command decoding structure that
includes a set of gates decoding either a read command or a write
command. If a write command propagates through decoding circuit 400
of a module register, an ATC signal would be transmitted from port
402 to memory devices coupled to the module register. A read
command that propagates through decoding circuit 400 of a module
register to transmit an ATC signal from port 402 must first
propagate through latch 418. Latch 418 provides a one clock cycle
delay relative to the issuance of a read command from another
module register.
[0032] Memory
[0033] FIG. 5 shows an embodiment of a memory 500 including a
control logic 502 coupled to an active termination control port 504
for receiving an active termination control signal and coupled to
an active termination 505, in accordance with the teachings of the
present invention. Control logic 502 logic includes timing
circuitry to turn on and to turn off the active termination.
Control logic 502 represents a standard memory control logic along
with additional circuitry or state machine for controlling the
state of the active termination on the memory. For convenience,
FIG. 5 does not contain all the elements of a memory, but contains
those elements of a memory necessary for understanding the
embodiments discussed, as can be appreciated by those skilled in
the art.
[0034] In addition to receiving an ATC signal at port 504, control
logic 502 receives CKE, CLK#, and CLK at ports 506, 508, 510,
respectively. Memory 500 also receives command signals CS#, WE#,
CAS#, and RAS# at ports 512, 514, 516, and 518, respectively, that
are decoded in command decode 520. In addition, memory 500 has one
or more mode registers 522 as part of control logic 502 or coupled
to control logic 502. The one or more mode registers 522 are
programmed with information for operating memory 500 including CAS
latency, operating mode, burst length, and burst type. Additional
operating information can be contained in the one or more mode
registers 522, depending on the particular memory.
[0035] Memory 500 also includes an address bus 524, a data bus 526,
and a memory circuit 528 that contains data stored in memory 500.
Memory circuit 528 is coupled to address bus 524 for receiving
information identifying the location for reading or writing data
from data bus 526. The identification of the location is contained
in BA0-BA1 for selecting a memory bank and in A0-AX for selecting
an address within a memory bank. The management of the read and
write operations is performed by control logic 502 upon receiving
commands from a processor such as controller 220 of FIG. 2. The
read and write operations of memory 500 are controlled using a
delay lock loop having a CLK input to adjust timing provided to
drivers 532. The read and write operations are further controlled
with a data strobe DQS that is provided by a DQS generator 534
suppling drivers 532 to control the DQS placed on DQS line 536. In
addition, the drivers also clock out data 324 received from memory
circuit 314 for transferral to data bus 526 in data bus locations
DQ0-DQX.
[0036] Memory 500 uses one or more registers as mode registers in
which operating information is programmed into memory 500 by a
controller, typically, on initialization or boot up (start of
system). As mentioned, this information includes CAS latency,
operating mode, burst length, burst type. As is known, the burst
length determines the maximum number of column locations that can
be accessed for a given read or write command. Typically, the burst
type is either sequential or interleaved, and the CAS latency is
the number of clock cycles between the registration of a read
command by memory 500 and the availability of the first bit of
output data from memory 500. The operating mode can either be
normal operation or normal operation with a reset of the delay lock
loop (DLL). The one or more mode registers 522 can also be
programmed with information for controlling active termination.
[0037] Control logic 502 includes a timing circuit to turn on the
active termination at a predetermined time after an active
termination control signal is received at the active termination
control port. The turn-on of the active termination is set by
memory 500 using one or more bits defining a CAS latency. The
turn-on of the active termination can further be adjusted by an
additive latency (AL) that is also programmed into one or more mode
registers. In an embodiment, the timing circuitry of control logic
502 is configured to turn-on active termination at the CAS latency
minus two clock cycles plus the additive latency. In one
embodiment, the additive latency is zero. The control logic also
includes a timing circuit to turn off the active termination at a
predetermined time after turning the active termination device on.
In one embodiment, control logic 502 is configured to use the bits
defining the burst length to set a turn off time for the active
termination. For convenience, the number of cycles equal to the BL
will also be referred to as burst length, BL. The timing circuit of
control logic 502 sets a turn off time for active termination at a
burst length divided by two, plus one and one-half a clock cycle
after turning on the one active termination. A burst length for a
DDR is divided by two, since one data bit is read out on a rising
edge of a clock and another data bit is read out on a falling edge
of the same clock. For a memory with one data bit read for one
clock cycle, the turn off time for the active termination would be
the burst length plus one and one-half a clock cycle after turning
on the one active termination.
[0038] In one embodiment, memory device 500 has active termination
with multiple termination values. The one or more mode registers
contain one or more bits to select one of the multiple active
termination values. In an embodiment, the multiple active
termination values are 75 ohms and 150 ohms. In one embodiment, the
75 ohm termination value is used when the memory is in a two module
system, the 150 ohm termination value is used when the memory is in
a one module system.
[0039] In a two module or two slot system, command signals to write
or read to memory devices on one module is accompanied by ATC turn
on signals to memory devices on the other module. However, in
systems with only one module, there is no second module for active
termination. In a one module system, each memory self terminates
for write operations and does not do anything for read operations.
To accomplish this self termination for writes in a one module
system, memory 500 includes one or more bits in one or more mode
registers 522 that indicates that memory 500 is in a single slot or
a dual slot system. Memory 500 has logic circuitry such that
whenever one or more bits selects a single slot system, memory 500
is enabled to ignore a received active termination control signal.
When memory 500 is programmed on initialization as a single slot
system, the programmed bits are used to turn on self termination
upon receiving a write command using the CAS latency and additive
latency information in the one or more mode registers 522. The
active termination is turned off after turning on the active
termination using burst length information programmed in the one or
more mode registers 522.
[0040] In another embodiment, memory 500 includes one or more mode
registers with information that enables or disables active
termination.
[0041] Thus, one or more mode registers are used to turn-on and
turn-off active termination on memory 500 based on the information
programmed into these registers. This configuration provides more
programmable control than using a external signal to turn on active
termination and another external signal to turn off active
termination, or equivalently, turning active termination on and off
with the two transitions of a single active termination signal.
[0042] Memory 500, as well as module register 300 and controller
220, can each be realized as a single integrated circuit. Memory
500 can be formed on a semiconductor die using a substrate, where
the substrate is a material such as silicon, germanium, silicon on
sapphire, gallium arsenide, or other commonly used semiconductor
material. The elements of memory 500 are fabricated using
conventional processing means for forming the various circuits
within the semiconductor material and for providing electrical
connections for coupling to an address bus, a data bus, and control
lines for communication with a controller or a processor.
[0043] The various embodiments of memory 500 along with the various
embodiments of module register 300 of FIG. 3 can be coupled with a
controller such as controller 220 of FIG. 2 to form system 200 to
provide a system with the ability to manage its active termination
control. Further, system 200 can use one or more controllers having
various embodiments of controller 220 to program the one or more
mode registers 522 of each memory 500 to which it is coupled
independent of the other memories.
[0044] Data Structure
[0045] FIG. 6 shows an embodiment of an extended mode register
having bit locations, which provide information for active
termination control, in accordance with the teachings of the
present invention. The extended mode register includes bit
locations 0, 1, 2 for information regarding delay lock loop(DLL),
drive strength (DS), and flow control (QFC), respectively. Location
E0 provides for DLL enable/disable. Location E1 provides for
information on drive strength, and E2 provides for QFC disabling of
flow control. The extended mode register of a memory such as memory
500 of FIG. 5 is operatively coupled to the address bus 524 for
programming by a controller such as controller 220 of FIG. 2.
Controller 220, or an intermediate controller, programs information
into the extended mode register during initialization using the
address bus. Generally, the BA1, BA2 locations of the address bus
are used to distinguish between programming a standard mode
register of memory 500 and an extended mode register. Typically,
BA1=0 and BA0=0 is used to program a standard mode register, while
BA1=0 and BA0=1 is used to program a standard mode register.
[0046] The extended mode register can be used to program one or mor
bits for use in active termination control, since the bits, 3-11,
for operating mode have not been completely set by a
standardization body. In one embodiment, the data structure for the
extended mode register includes a field containing data
representing a single slot or a dual slot memory system. The field
includes at least one bit for selecting a single slot or a dual
slot system. In another embodiment, the data structure for the
extended mode register includes a field containing data
representing multiple termination values for a memory device. The
field includes one or more bits for selecting either a 75 ohm
termination value or a 150 ohm termination value. In another
embodiment, the data structure for the extended mode includes a
field having one or more bits containing data representing enabling
or disabling active termination control for a memory.
[0047] Alternatively, the active termination information is
programmed into one or more mode registers other than the standard
mode register and the extended mode register, both of which usually
adhere to a data structure defined by a standardization body such
as JEDEC. CAS latency and burst length are typically programmed
into the standard mode register.
[0048] FIG. 7 shows an embodiment of a mode register using bit
locations, which provide information for active termination
control, in accordance with the teachings of the present invention.
Bit locations 12, 13 are operatively coupled to address locations
BA0, BA1, respectively to provide identification of the mode
register to be programmed on initialization. The remaining bit
locations, 0-11, are operatively coupled to address bus locations
A0-A11, respectively. The bit locations, 0-11, can be used for
active termination control. In one embodiment, the data structure
for the mode register includes a field containing data representing
a single slot or a dual slot memory system. The field includes at
least one bit for selecting a single slot or a dual slot system. In
another embodiment, the data structure for the mode register
includes a field containing data representing multiple termination
values for a memory device. The field includes one or more bits for
selecting either a 75 ohm termination value or a 150 ohm
termination value. In another embodiment, the data structure for
the mode includes a field having one or more bits containing data
representing enabling or disabling active termination control for a
memory.
[0049] As mentioned previously, the mode registers of a memory are
programmed by a controller during initialization of the memory.
Alternately, the mode registers can be programmed after
initialization using a specified command sequence. Further, the
mode registers of FIG. 6 and FIG. 7 are programmed by a controller
providing a data signal for the memory embodied in a set of
electrical signals including data representing a single slot or a
dual slot system that includes a data portion for selecting the
single slot or the dual slot system. The data signal includes a
data portion for selecting a single slot or a dual slot system with
at least one bit for selecting a single slot or a dual slot system.
With the data portion configured to select a single slot system,
the data portion programs the memory to ignore a received active
termination control signal. In another embodiment, the data signal
further includes data representing selection of multiple active
termination values with a data portion having one or more bits to
select either a 75 ohm termination value or a 150 ohm termination
value. In another embodiment, the data signal further includes data
representing enabling or disabling an active termination control in
the memory device with a data portion having one or more bits to
enable or disable the active termination control.
[0050] The one or more mode registers are programmed in a memory on
initialization of the memory by a controller or processor on boot
up, or start up. The mode registers are programmed with data
including data portions as discussed above. The controller programs
these mode registers based on instructions stored in a computer
readable medium that the controller accesses for initialization
instructions. This computer readable medium may be memory locations
within the controller or any other computer readable medium
operatively coupled to the controller. The computer-readable medium
has computer-executable instructions for performing a method
including determining a set of bits to be sent to and loaded into
one or more registers of a memory, arranging the bits in a
predetermined format, and outputting the set of bits. In one
embodiment, the set of bits includes at least one bit for selecting
a single slot or a dual slot system. When the set of bits indicates
the selection of a single slot system, the outputting of the set of
bits to a memory programs the memory to ignore a received active
termination control signal. Additionally, the computer-readable
medium can include in the set of bits one or more bits, for
selecting multiple termination values. For instance, the one or
more bits are provided for selecting a 75 ohm termination value or
a 150 ohm termination value. In another embodiment, the set of bits
additionally includes one or more bits for enabling or disabling
active termination control. It can be appreciated by those skilled
in the art, that the computer readable medium accessed by a
controller or processor can be of any computer readable form such
as, but not limited to, CD-ROMs, nonvolatile ROM, ROM, and RAM.
[0051] Operation
[0052] FIG. 8 shows a flow diagram of an embodiment for a method
for active termination control, in accordance with the teachings of
the present invention. A module register such as module register
300 of FIG. 3 is used in system 200 of FIG. 2 as module registers
232 and 252. At block 802, module register 232 monitors system
command bus 260. At block 804, a determination is made as to
whether the command is a predetermined command. At block 806, in
response to determining that a predetermined command is on command
bus 260, an active termination control signal is issued.
[0053] In one embodiment, module register 232 monitors the command
bus for a write command or a read command, while also monitoring
the chip select or inverted chip select signals that it receives
from controller 220. In a two slot, or two module, system, module
register 232 uses the chip select information to determine whether
or not to output an ATC signal. For instance, if the write or read
command is for memory on module one, the active termination is
performed on module two. Thus, in FIG. 2, with a write or read to
memory module 230, module register 252 provides an ATC signal for
active termination on memory devices on module 250. If a write
command for memory devices on memory module 230 is detected, module
register 252 generates an ATC signal coinciding with the module
register 232 issuing a write command. Both the ATC signal and the
module register generated write command are issued a clock cycle
after the write command is monitored from the system command bus
260. If a read command for memory devices on memory module 230 is
detected, module register 252 generates an ATC signal one clock
cycle after the module register 232 issues a write command. The
module register generated read command is issued a clock cycle
after the read command is monitored from the system command bus
260, with the ATC signal generated two clock cycles after the read
command is monitored from the system command bus 260.
[0054] FIG. 9 shows a flow diagram of another embodiment for a
method for active termination control, in accordance with the
teachings of the present invention. At block 902, an active
termination control signal is received. At block 904, active
termination is turned on. A memory such as memory 500 of FIG. 5 is
used on memory modules 230, 250 in system 200 of FIG. 2. Memory 500
receives an ATC signal, and turns on active termination based on
information in one or more mode registers 522. Turning on active
termination occurs at a predetermined time after receiving the
active termination control signal. In one embodiment, the active
termination is turned on based on information regarding CAS latency
and additive latency programmed in one or more mode registers. The
turn on time is set at about a CAS latency less two clock cycles
plus an additive latency after receiving the ATC signal. For
example, for a CAS latency of four programmed in a standard mode
register and an additive latency of zero, the active termination
turns on two clock cycles after the ATC signal is received. In
another embodiment, for a memory without additive latency, active
termination is set at about a CAS latency less two clock cycles
after receiving the ATC signal. It can be appreciated by those
skilled in the art, that the predetermined time for turning on the
active termination can be set using other parameters. Other
predetermined turn on times include using the CAS latency minus an
additional number of clock cycles, where the additional number of
clock cycles can be any number of clock cycles, including
fractional clock cycles, less than the CAS latency. It is a matter
of selecting the additional clock cycles such that the active
termination is turned on for a short period before the data is read
or written.
[0055] The active termination is maintained in an on state for a
predetermined length of time. The predetermined time is determined
using information programmed in one or more mode registers. In one
embodiment, the predetermined time is set at about a burst length
divided by two plus one and a half clock cycles. For a DDR, the
burst length is divided by two. For a memory with one bit read or
written in one clock cycle, the burst length is not divided by two.
For instance, for a burst length of eight programmed in a standard
mode register, the active termination is maintained on for five and
one-half clock cycles after the active termination is turned. It
can be appreciated by those skilled in the art, that the
predetermined length of time for maintaining the active termination
can be set using other parameters. Other predetermined lengths of
time include using the burst length or burst length divided by two
plus an additional number of clock cycles, where the number of
clock cycles can be 1, 1.5, 2, 2.5, or other number. It is a matter
of selecting the additional clock cycles such that the active
termination is still on for a short period after the data is read
or written.
[0056] In an embodiment, a method for active termination control in
a memory includes accessing information indicating an enable or
disable of an active termination control, determining a turn on
time for the active termination, and determining a turn off time
for the active termination. The information indicating an enable or
disable of the active termination control is provided by at least
one bit in a mode register. The one or more bits indicating an
enable or disable of the active termination control is combined
with latency information to set a turn on time at a predetermined
period after receiving an ATC signal. In one embodiment, the
predetermined time is set to a CAS latency less two clock cycles
plus an additive latency after receiving an ATC signal.
Alternately, there is no additive latency or the additive latency
is set to zero. The turn off time is determined by combining the
information indicating an enable or disable of an active
termination control with burst length information. In one
embodiment, determining a turn off time for the active termination
control includes setting the turn off time to a burst length
divided by two plus a multiple of a clock cycle after the turn on
time of the active termination. A convenient multiple of a clock
cycle is one equal to about one and one-half clock periods.
[0057] A memory such as memory 500 of FIG. 500 uses the received
ATC signal, the CAS latency and burst length programmed into the
mode register to set the turn on and turn off times for active
termination. This operation is appropriate for a two slot system,
where memory devices to which data is written or from which data is
read are on a memory module in one slot, and the memory devices for
active termination are on a memory module in the other slot. For a
one slot system, another method can be applied. In one embodiment,
a method for active termination control in a memory includes
receiving an active termination control signal, ignoring the
received active termination control signal, and turning on active
termination in response to receiving a write command. The
information for ignoring the received active termination control
signal is programmed in a mode register of the memory. This
information is typically stored as one or more bits in a mode
register of the memory.
[0058] As with a two slot system, the turn on and turn off times
are set using latency information and burst length information,
respectively. Turning on active termination occurs at a CAS latency
less two clock cycles plus an additive latency after receiving the
write command. In one embodiment, setting the turning on time for
he active termination includes using a zero additive latency. The
active termination is maintained for a predetermined time after
receiving write command. In one embodiment, the predetermined time
is about a burst length divided by two plus one and a half clock
cycles. In a one slot system, no termination is required for read
operations.
[0059] FIG. 10 shows a flow diagram of another embodiment for a
method for extending active termination control, in accordance with
the teachings of the present invention. A memory such as memory 500
of FIG. 5 is used on memory modules 230, 250 in system 200 of FIG.
2. At block 1002, memory 500 receives an active termination control
signal. At block 1004, memory 500 sets turn on time for active
termination. At block 1006, memory 500 sets turn off time for
active termination. At block 1008, memory 500 determines whether
another active termination control signal has arrived. If another
active termination control signal has arrived, memory 500 returns
to block 1006 to set a new turn off based on the latest active
termination control signal. At block 1010, if another active
termination control signal has not arrived, memory 500 turns off
the active termination at the last set turn off time, which is
based on the last ATC signal received. Thus, memory 500, in
response to receiving another ATC signal while the active
termination is on, maintains the active termination on for a
predetermined time set relative to the last ATC signal received.
Memory 500 uses the same procedure and parameters to determine the
turn-off time based on the last ATC signal received as it performed
for setting a turn-off time for the first ATC signal received. For
instance, on receiving a second and last ATC signal, a timer is
reset for the active termination to last a burst length divided by
two plus one and one-half clock cycles after a turn on time
associated with the last active termination control signal.
[0060] FIG. 11 shows a timing diagram 1100 for a write operation to
memories with a CAS latency of three and burst length of four in an
embodiment of a method for active termination control, in
accordance with the teachings of the present invention. Timing
diagram 1100 can be applied to system 200 of FIG. 2 for discussion
purposes. At 1102, a write command on a system command bus 260 is
detected by module registers 232, 252. Since this command is
detected by module register 232, 252 effectively snooping the
system command bus 260, it is indicated in FIG. 11 as a command
edge connect. At 1102, WR RO means write to rank zero indicating a
write command for writing to memories of the first rank on module
one. The term, WR R2, meads a write to rank two indicating a write
command to memories on the second module. Thus, on the command bus,
controller 220 is sending write commands to memory module 230 in
slot 0 and memory module 250 in slot 1 with two different writes.
At 1104, module register 232, since it's clocked, delays the write
command on memory module 230 by one clock cycle as it goes through
the module register. At 1106, module register 252 fires an ATC
signal for memory module 250 in slot 1 coincident with the write
command from memory register 232 to slot zero, while module
register 232 does not send out an ATC pulse or signal to memory
module 230.
[0061] At 1108, the active termination turns on for memory module
250 in slot 1 at a CAS latency minus two clock cycles. For the CAS
latency set at three, the active termination turns on one clock
cycle after the memory devices on memory module 250 in slot 1
receive the ATC signal. At 1110, on the DQ lines, the data in for
rank 0, module 230, begins at CAS latency minus one with a burst
length of four, driven by DQS.
[0062] At 1112, a write to rank two indicating a write command to
memories on the second module is generated by controller 220 on
system command bus 260. At 1114, module register 252 of memory
module 250 regenerates the write command for memory devices on
memory module 250 in slot 1.
[0063] At 1116, module register 232 of memory module 230 generates
an ATC pulse or signal for memory devices on memory module 230 in
slot 0. At 1118, since the CAS latency is three, the active
termination for memory module 230 in slot 0 turns on one clock
cycle after receiving the ATC signal that coincides with the write
command regenerated by memory register 252 for memory devices on
memory module 250 in slot 1. At 1120, on the DQ lines, the data in
for rank 2, module 250, begins at CAS latency minus one with a
burst length of four, driven by DQS.
[0064] The active termination on memory module 250 in slot 1 turns
off at the burst length of 4 divided by 2, plus one and one-half
clock cycles providing an off time of about three and one-half
clock cycles after turning on. As can be seen from FIG. 11, the
active termination on memory module 250 in slot 1 completely
brackets the writing of data in memory devices on memory module 230
in slot 0. Likewise, the active termination on memory module 230 in
slot 0 completely brackets the writing of data in memory devices on
memory module 250 in slot 1. For the case demonstrated in FIG. 11,
there is a period of time for which the active termination on
memory module 230 in slot 2 and the active termination on memory
module 250 in slot 1 are both on. This does not cause any problems
since there is nothing on the data bus at that time. The effective
active termination for system 200 is shown at 1122, which
demonstrates that active termination is effectively maintained for
the two write commands sequence close together in time.
[0065] Since the turning on and off of the active termination
occurs on memory devices on different memory modules that use a
common DQ bus, the memory devices on both memory modules need to
operate with the same CAS latency, and the same burst length. In
addition, the command bus needs to be shared by both memory
modules, since the generation of an ATC signal on one memory module
and subsequent turning on and off of the active termination is
performed assuming command operations are being performed on the
other memory in an associated time frame.
[0066] FIG. 12 shows a timing diagram 1200 for a read operation in
memories with a CAS latency of three and burst length of four in an
embodiment of a method for active termination control including
extending active termination control, in accordance with the
teachings of the present invention. Timing diagram 1200 can be
applied to system 200 of FIG. 2 for discussion purposes. At 1202, a
read command on a system command bus 260 is detected by module
registers 232, 252. RD RO means read to rank zero indicating a read
command for reading memories of the first rank on module one. The
term, RD R2, meads a read of rank two indicating a read command to
memories on the second module. At 1204, module register 232, since
it's clocked, delays the read command on memory module 230 by one
clock cycle as it goes through the register. At 1206, module
register 252 on the memory module 250 fires an ATC signal that is
delayed one clock cycle from module register 232 issuing a read
command for memories on memory module 230. This coordination in
timing is facilitated by module registers 232, 252 both receiving
common clock signals and both snooping a common system bus. Module
register 232 does not send out an ATC pulse or signal to memory
module 230 to which a read operation is to be performed on memory
module 230 in slot 0.
[0067] At 1208, the active termination turns on for memory module
250 in slot 1 at a CAS latency minus two clock cycles. For the CAS
latency set at three, the active termination turns on one clock
cycle after the memory devices on memory module 250 receive the ATC
signal. The memories also determine a turn off time at the burst
length divided by two plus one and one half clock cycles after
turning on the active termination. For a burst length of four, the
memories set a turn-off time at three and one-half clock cycles
after the turning on of the active termination. At 1210, on the DQ
lines, the data out for rank 0, module 230, begins at CAS latency
minus one with a burst length of four, driven by DQS.
[0068] However, prior to turning on the active termination for
memory devices on memory module 250 in slot 1, controller 220
issues another read command at 1212. At 1214, module register 232
of memory module 230 in slot 0 issues a read command to the memory
devices on memory module 230 one clock cycle after detecting the
1212 read command on the system command bus 260. One clock cycle
after module register 232 issues the 1214 read command, at 1216,
module register 252 on memory module 250 generates another ATC
signal for the memories on memory module 250 in slot 1. The
memories receiving this second ATC signal on memory module 250
determine a new active termination turn on time and a new turn off
time based on the arrival of the second ATC signal. From FIG. 12,
the new turn on time begins at two clock cycles after the first
turn on time at 1218, which is before the scheduled turn off time
determined from the first ATC signal received. The memories will
reset the on time for the active termination based on the second
ATC signal received and will set the turn off time at three and
one-half clock cycles for the newly determined turned on time.
Thus, the active termination stays on between the two read
operations for memories on memory module 230 in slot 0.
[0069] At 1220, on the DQ lines, the data out for rank 0, module
230, is read out in response to the second read command to the
memories of memory module 230 in slot 0. This data is immediately
read out following the data read with respect to the first read
command. As can be seen in FIG. 12, the complete read out of data
from memory module 230 in slot 0 following the two read commands is
completely bracketed with the active termination in an on state in
memory devices on memory module 250 in slot 1.
[0070] At 1222, prior to the completion of the read operations for
memories on memory module 230 in slot 230, controller 220 issues a
read command for memories on memory module 250 in slot 1. At 1224,
module register 252 issues a read command to memory devices on
memory module 250 one clock cycle after detecting a read command on
the system command bus 260. One clock cycle after memory register
252 issues a read command, memory module 232 generates an ATC
signal for memory devices on memory module 230 in slot 0. Then one
cycle later, which is the CAS latency minus two clock cycles, the
active termination is on, at 1228, in memory devices on memory
module 230 in slot 0. At 1230, on the DQ lines, the data out for
rank 2, module 250, begins at CAS latency minus one with a burst
length of four, driven by DQS. At 1232, the effective active
termination for the system brackets both reads on memory module 230
and the read on memory module 250. The on state of active
termination on memory devices on memory module 230 overlaps the on
state of active termination on memory devices on memory module 250
for a short period of time. During this overlap period of time, no
data is on the system data bus.
[0071] For all the read and write commands, the turn on times and
turn off times are the same. For a CAS latency of three and burst
length of 4, the turn on time is one clock cycle after receiving
the ATC signal, while the turn off time is three and one-half clock
cycles after turning on the active termination. The turn off time
is modified if additional read or write commands are monitored
causing new active termination turn on times to be determined that
are scheduled prior to turning off the active termination from a
previous read or write command. Of course, the relative turn on and
turn off times can be changed by reprogramming all the memories
with a CAS latency different than three and a burst length
different than four. However, as noted earlier, since read and
write operations are being performed on memories devices on one
memory module and active termination is being performed on memories
devices on other memory, the timing requirements for all memories
are the same with all memories having the same CAS latency and
burst length along with receiving a common clock and being coupled
to a common bus.
Conclusion
[0072] The above structures and methods have been described by way
of example, and not by way of limitation, with respect to active
termination through an on module register. A method and apparatus
are provided for active termination control in a memory by an
module register providing an active termination control signal to
the memory. The module register monitors a system command bus for
read and write commands. In response to detecting a read or write
command, the module register generates an active termination
control signal to the memory. The memory turns on active
termination based on information programmed into one or more mode
registers of the memory. In one embodiment, the CAS latency is used
to determine a turn on time, and the burst length is used to
determine a turn off time following the turn on of the active
termination.
[0073] As a result of this method, the number of ports, or pins, to
provide termination in a system is reduced. In the various
embodiments, pins for active termination control are not need on a
system controller, a motherboard, or memory modules.
[0074] Although specific embodiments have been illustrated and
described herein, it will be appreciated by those of ordinary skill
in the art that any arrangement that is calculated to achieve the
same purpose may be substituted for the specific embodiment shown.
This application is intended to cover any adaptations or variations
of the present invention. It is to be understood that the above
description is intended to be illustrative, and not restrictive.
Combinations of the above embodiments, and other embodiments will
be apparent to those of skill in the art upon reviewing the above
description. The scope of the invention includes any other
applications in which the above structures and fabrication methods
are used. The scope of the invention should be determined with
reference to the appended claims, along with the full scope of
equivalents to which such claims are entitled.
* * * * *