U.S. patent application number 11/089371 was filed with the patent office on 2005-12-22 for field effect transistor and method for manufacturing the same.
Invention is credited to Choi, Dong-Uk, Kim, Dong-Won, Oh, Chang-Woo, Park, Dong-Gun, Yeo, Kyoung-Hwan.
Application Number | 20050280102 11/089371 |
Document ID | / |
Family ID | 35479760 |
Filed Date | 2005-12-22 |
United States Patent
Application |
20050280102 |
Kind Code |
A1 |
Oh, Chang-Woo ; et
al. |
December 22, 2005 |
Field effect transistor and method for manufacturing the same
Abstract
A field effect transistor (FET) and a method for manufacturing
the same, in which the FET may include an isolation film formed on
a semiconductor substrate to define an active region, and a gate
electrode formed on a given portion of the semiconductor substrate.
A channel layer may be formed on a portion of the gate electrode,
with source and drain regions formed on either side of the channel
layer so that boundaries between the channel layer and the source
and drain regions of the FET may be perpendicular to a surface of
the semiconductor substrate.
Inventors: |
Oh, Chang-Woo; (Suwon-si,
KR) ; Park, Dong-Gun; (Seongnam-si, KR) ; Kim,
Dong-Won; (Seongnam-si, KR) ; Choi, Dong-Uk;
(Hwaseong-si, KR) ; Yeo, Kyoung-Hwan; (Seoul,
KR) |
Correspondence
Address: |
HARNESS, DICKEY & PIERCE, P.L.C.
P.O. BOX 8910
RESTON
VA
20195
US
|
Family ID: |
35479760 |
Appl. No.: |
11/089371 |
Filed: |
March 25, 2005 |
Current U.S.
Class: |
257/401 ;
257/E21.426; 257/E21.429; 257/E21.431; 257/E21.438; 257/E29.04;
257/E29.056; 257/E29.298; 257/E29.302 |
Current CPC
Class: |
H01L 29/66621 20130101;
H01L 29/7851 20130101; H01L 29/66795 20130101; H01L 29/7881
20130101; H01L 29/665 20130101; H01L 29/0847 20130101; H01L
29/66636 20130101; H01L 29/1054 20130101; H01L 29/78687 20130101;
H01L 29/66651 20130101 |
Class at
Publication: |
257/401 |
International
Class: |
H01L 029/76 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 16, 2004 |
KR |
2004-44512 |
Claims
What is claimed is:
1. A field effect transistor (FET), comprising: a semiconductor
substrate having an isolation film formed thereon to define an
active region; a gate electrode formed on a given portion of the
semiconductor substrate; a channel layer formed on a portion of the
gate electrode; and source and drain regions formed on either side
of the channel layer so that boundaries between the channel layer
and the source and drain regions are perpendicular to a surface of
the semiconductor substrate.
2. The FET of claim 1, wherein the channel layer is a non-doped
epitaxial layer.
3. The FET of claim 1, wherein the channel layer is an epitaxial
layer having an n-type or p-type impurity.
4. The FET of claim 1, wherein a boundary between source region and
one side of the channel layer or between the drain region and the
other side of the channel layer aligns with a corresponding
sidewall of the gate electrode.
5. The FET of claim 1, wherein the source and drain regions are
formed of an epitaxial layer having a doped impurity.
6. The FET of claim 1, wherein surfaces of the source and drain
regions rise up a surface of the channel layer.
7. The FET of claim 6, further comprising a pair of insulating
spacers, one insulating spacer formed on each side of the gate
electrode.
8. The FET of claim 1, further comprising: a gate oxide layer
formed between the channel layer and the gate electrode.
9. The FET of claim 1, further comprising: a storage node formed
between the channel layer and the gate electrode.
10. The FET of claim 9, wherein the storage node is a stacked
structure including a gate oxide layer, a floating gate and an
inter gate insulating layer.
11. The FET of claim 9, wherein the storage node is one of an
oxide-nitride-oxide (ONO) layer and a nano-crystal layer.
12. The FET of claim 1, further comprising: a high mobility
material formed between the channel layer and the gate
electrode.
13. The FET of claim 12, wherein the high mobility material is a
layer or stacked structure selected from the group consisting of C,
Si, Ge and combinations thereof.
14. The FET of claim 1, wherein the channel layer has a width and a
length, a surface of the isolation film disposed on either side of
the channel layer in a width direction of the channel layer is
lower than a bottom surface of the channel layer, and the gate
electrode encloses upper and side surfaces of the channel
layer.
15. The FET of claim 1, further comprising; a silicide layer formed
on a surface of the gate electrode and surfaces of the source and
drain regions.
16. The FET of claim 15, wherein a surface of the isolation film
formed on side portions of the source and drain regions is
positioned between a top surface and a bottom surface of the source
and drain regions, and the silicide layer is formed on upper and
side surfaces of the source and drain regions.
17. The FET of claim 1, wherein the channel layer is formed on a
lower portion of the gate electrode.
18. A field effect transistor (FET), comprising: a semiconductor
substrate having an isolation film formed thereon to define an
active region; a channel layer formed on a portion of the active
region and having a width and a length; a gate electrode formed on
the channel layer so as to extend in the width direction of the
channel layer; source and drain regions disposed on corresponding
sides of the channel layer in a length direction of the channel
layer so that boundaries between the channel layer and the source
and drain regions are perpendicular to a surface of the
semiconductor substrate; and a pair of insulating spacers, one
insulating spacer formed on each sidewall of the gate
electrode.
19. The FET of claim 18, wherein a surface of the isolation film
disposed on either side of the channel layer in a width direction
of the channel layer is lower than a bottom surface of the channel
layer, and the gate electrode encloses upper and side surfaces of
the channel layer.
20. The FET of claim 18, wherein the source and drain regions are
formed of an epitaxial layer having a doped impurity.
21. The FET of claim 18, wherein a boundary between source region
and one side of the channel layer or between the drain region and
the other side of the channel layer substantially aligns with a
corresponding outer side surface of a spacer.
22. The FET of claim 18, further comprising a high mobility
material formed between the channel layer and the gate
electrode.
23. The FET of claim 18, wherein the high mobility material is a
layer or stacked structure selected from the group consisting of C,
Si, Ge and combinations thereof.
24. The FET of claim 18, further comprising a gate oxide layer
formed between the channel layer and the gate electrode.
25. The FET of claim 18, further comprising a storage node formed
between the channel layer and the gate electrode.
26. The FET of claim 25, wherein the storage node is a stacked
structure including a gate oxide layer, a floating gate and an
inter gate insulating layer.
27. The FET of claim 25, wherein the storage node is one of an
oxide-nitride-oxide (ONO) layer and a nano-crystal layer.
28. The FET of claim 18, wherein the channel layer is formed on an
upper portion of the active region.
29. A method for manufacturing a field effect transistor (FET),
comprising: forming a junction layer on a semiconductor substrate;
forming an isolation film on a given portion of the semiconductor
substrate; forming source and drain regions with a space between
the source and drain regions in the junction layer; forming a
channel layer in the space; and forming a gate electrode on the
channel layer.
30. The method of claim 29, wherein forming source and drain
regions with a space between further includes anisotrophically
etching a given portion of the junction layer to define the source
and drain regions with the space there between.
31. The method of claim 29, wherein forming the junction layer
includes: implanting impurities for a source and a drain into a
surface of the semiconductor substrate; and activating the
impurities.
32. The method of claim 29, wherein the forming the junction layer
includes: growing an epitaxial layer on a surface of the
semiconductor substrate; and doping impurities for a source and a
drain into the epitaxial layer.
33. The method of claim 29, wherein forming the junction layer
includes growing an epitaxial layer that includes doped impurities
for a source and a drain on a surface of the semiconductor
substrate.
34. The method of claim 29, wherein forming the junction layer
includes depositing a silicon layer having doped impurities for a
source and a drain on a surface of the semiconductor substrate.
35. The method of claim 29, wherein forming the source and the
drain regions and forming of the channel layer includes: forming a
mask pattern for defining a gap between source and drain regions on
the junction layer reserved for a channel layer; exposing the
semiconductor substrate by performing an anisotrophic etching on
the junction layer in a shape of the mask pattern; and forming a
channel layer by epitaxially growing the semiconductor substrate
exposed in the gap between the source and drain regions.
36. The method of claim 35, further comprising: forming a high
mobility material on a surface of the channel layer after the
channel layer has been formed by epitaxially growing the exposed
semiconductor substrate.
37. The method of claim 36, wherein the high mobility material is a
layer or stacked structure selected from the group consisting of C,
Si, Ge and combinations thereof.
38. The method of claim 36, wherein the high mobility material is
formed by an epitaxial growth process.
39. The method of claim 29, further comprising: forming a gate
oxide layer after forming the channel layer but prior to forming
the gate electrode.
40. The method of claim 39, wherein the forming of the gate
electrode includes: forming mask patterns on the gate oxide layer
so as to expose a space between the mask patterns that is reserved
for a gate electrode; depositing gate electrode material to fill
the space; planarizing the gate electrode material to expose a
surface of the mask pattern; and removing the mask pattern to
realize the gate electrode.
41. The method of claim 29, further comprising: forming a
corresponding spacer on corresponding sidewalls of the gate
electrode after forming the gate electrode; and forming a silicide
layer on the gate electrode, source region and drain region.
42. The method of claim 41, further comprising: removing the
isolation film to a given depth so as to expose sidewalls of the
source and drain regions after forming the spacers are formed but
before forming the silicide layer.
43. The method of claim 29, further comprising: removing the
isolation film to a given depth so as to expose sidewalls of the
channel layer after forming the channel layer but before forming
the gate electrode.
44. The method of claim 29, further comprising: forming a storage
node on the channel layer after forming the channel layer but
before forming the gate electrode.
45. A method for manufacturing a field effect transistor (FET),
comprising: forming a channel layer on a semiconductor substrate;
forming a gate electrode on the channel layer; forming a spacer on
each corresponding sidewall of the gate electrode; defining regions
reserved for a source region and a drain region in the channel
layer; and forming an impurity-containing epitaxial layer in the
defined regions to form the source and drain regions.
46. The method of claim 45, wherein defining regions further
includes anisotrophically etching the channel layer in a shape of
the gate electrode and spacers to form the defined regions reserved
for source and drain regions.
47. The method of claim 45, wherein forming the channel layer
includes: implanting impurities into a surface of the semiconductor
substrate; and activating the impurities.
48. The method of claim 45, wherein forming the channel layer
includes: growing an epitaxial layer on a surface of the
semiconductor substrate; and doping impurities into the epitaxial
layer.
49. The method of claim 45, wherein forming of channel layer
includes growing an epitaxial layer with doped impurities therein
on a surface of the semiconductor substrate.
50. The method of claim 45, wherein forming the channel layer
includes depositing a silicon layer having doped impurities therein
on a surface of the semiconductor substrate.
51. The method of claim 45, wherein forming the gate electrode
includes: forming a gate oxide layer on the channel layer;
depositing gate electrode material on the gate oxide layer; forming
a hard mask layer on the gate electrode material; forming a
photoresist pattern on the hard mask layer so as to define a gate
electrode; patterning the hard mask layer and gate electrode
material in a shape of the photoresist pattern; and removing the
photoresist pattern.
52. The method of claim 51, wherein forming the spacers includes
oxidizing sidewalls of the gate electrode to a given oxide
thickness.
53. The method of claim 51, wherein defining regions for the source
and drain regions further includes exposing the semiconductor
substrate by etching the gate oxide layer and the channel layer
using the gate electrode and spacers as a mask.
54. The method of claim 53, wherein forming the source and drain
regions includes performing a selective epitaxial growth (SEG)
process on the exposed semiconductor substrate to grow the source
and drain regions to a given height.
55. The method of claim 45, further comprising: forming a high
mobility material on the channel layer after forming the channel
but before forming the gate electrode.
56. The method of claim 55, wherein the high mobility material is a
layer or stacked structure selected from the group consisting of C,
Si, Ge and combinations thereof.
57. The method of claim 55, wherein forming the high mobility
material includes forming the high mobility material by an
epitaxial growth process.
58. The method of claim 45, further comprising: forming a gate
oxide layer after forming the channel layer but before forming the
gate electrode.
59. The method of claim 45, further comprising: forming a storage
node after forming the channel layer but before forming the gate
electrode.
60. The method of claim 45, further comprising: forming an
isolation film on a given portion of the semiconductor substrate
after forming the channel layer but before forming the gate
electrode, wherein forming the isolation film and forming the gate
electrode further includes: forming a mask pattern on the channel
layer so as to expose a device isolation region; forming the
isolation film on the exposed device isolation region; forming a
resist pattern on the mask pattern so as to expose a space reserved
for the gate electrode; etching the mask pattern and isolation film
to a given depth in a shape of the resist pattern; removing the
resist pattern; depositing a gate electrode material in the exposed
space; planarizing the gate electrode material to expose a surface
of the mask pattern, so as to realize the gate electrode; and
removing the mask pattern.
61. The method of claim 60, wherein the isolation film is etched to
expose side portions of the channel layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the priority of Korean Patent
Application No. 2004-44512, filed on Jun. 16, 2004, in the Korean
Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates, in general, to a field effect
transistor (FET) and method for manufacturing the same.
[0004] 2. Description of the Related Art
[0005] As semiconductor devices become increasingly integrated,
size (i.e., channel length) of MOS transistors has become scaled.
As channel length is shortened, an integration density of the
semiconductor device may be improved. However, decreasing channel
length may cause a short channel effect to occur, such as a drain
induced barrier lowering (DIBL), a hot carrier effect and/or a
punch through. In order to reduce the possibility of such a short
channel effect from occurring, it may be desirable to reduce a
depth of a junction region and a thickness of a gate oxide layer in
proportion to a decrease or shortening of the transistor channel
length.
[0006] If the depth of the junction region is reduced, a junction
resistance (RS, RD) is also reduced. In case of a relatively long
channel transistor, the junction resistance does not have a
substantial influence on an `on current` of the transistor.
However, for a short channel transistor, the junction resistance
has a substantial influence and a relatively large junction
resistance may greatly reduce the transistor on current. Thus, it
may be desirable to improve the junction resistance characteristics
of a transistor such as a MOS transistor.
[0007] The junction resistance is a function of a spreading
resistance occurring at a channel edge (edge of a junction region).
That is, if the spreading resistance is reduced, the junction
resistance can be reduced. The spreading resistance is associated
with a doping profile of a junction region. If the doping profile
of the junction region can be reduced abruptly at the channel edge,
referred to as `junction abruptness", the spreading resistance may
be reduced. Thus, the more definite the junction abruptness at a
boundary between a channel edge and an adjacent layer (such as a
source or drain region in the transistor), the lower the spreading
resistance and hence, junction resistance.
[0008] However, conventionally in MOS transistors, the junction
region is formed by an impurity ion implantation and annealing
process. The doping profile at the junction region thus has an
undesirable slope of at least about 3 nm/decade at the side portion
of the junction region. This undesirable slope formed at sides of
the junction region due to the ion implantation and the annealing
process represents a substantial limitation in the efforts to
reduce the spreading resistance, since desirable junction
abruptness at the channel edge cannot be obtained.
SUMMARY OF THE INVENTION
[0009] An exemplary embodiment of the present invention is directed
to field effect transistor (FET). The FET may include a
semiconductor substrate having an isolation film formed thereon to
define an active region, a gate electrode formed on a given portion
of the semiconductor substrate, and a channel layer formed on a
portion of the gate electrode. Source and drain regions maybe
formed on either side of the channel layer so that boundaries
between the channel layer and the source and drain regions are
perpendicular to a surface of the semiconductor substrate.
[0010] Another exemplary embodiment of the present invention is
directed to a FET which may include a semiconductor substrate
having an isolation film formed thereon to define an active region,
a channel layer formed on a portion of the active region and having
a width and a length, and a gate electrode formed on the channel
layer so as to extend in the width direction of the channel layer.
The FET may include source and drain regions disposed on
corresponding sides of the channel layer in a length direction of
the channel layer so that boundaries between the channel layer and
the source and drain regions are perpendicular to a surface of the
semiconductor substrate. The FET may include a pair of insulating
spacers, one insulating spacer formed on each sidewall of the gate
electrode.
[0011] Another exemplary embodiment of the present invention is
directed to a method for manufacturing a field effect transistor,
in which a junction layer may be formed on a semiconductor
substrate and an isolation film may be formed on a given portion of
the substrate. Source and drain regions with a space between the
source and drain regions may be formed in the junction layer. A
channel layer may be formed in the space and a gate electrode may
be formed on the channel layer.
[0012] Another exemplary embodiment of the present invention is
directed to a method for manufacturing a field effect transistor,
in which a channel layer may be formed on a semiconductor substrate
and a gate electrode formed on the channel layer. A spacer may be
formed on each corresponding sidewall of the gate electrode, and
regions reserved for a source region and a drain region may be
defined in the channel layer. An impurity-containing epitaxial
layer may be formed in the defined regions to form the source and
drain regions.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The present invention will become more apparent by
describing, in detail, exemplary embodiments thereof with reference
to the attached drawings, wherein like elements are represented by
like reference numerals, which are given by way of illustration
only and thus do not limit the exemplary embodiments of the present
invention.
[0014] FIGS. 1 through 7 are plan views of a transistor according
to an exemplary embodiment of the present invention.
[0015] FIGS. 8 through 15 are sectional views of a transistor
according to an exemplary embodiment of the present invention.
[0016] FIGS. 16 through 19 are sectional views illustrating a
modification of a transistor according to an exemplary embodiment
of the present invention.
[0017] FIGS. 20 through 22 are plan views of a transistor according
to another exemplary embodiment of the present invention.
[0018] FIGS. 23 through 25 are sectional views of a transistor
according to another exemplary embodiment of the present
invention.
[0019] FIGS. 26 and 27 are sectional views illustrating a
modification of a transistor according to another exemplary
embodiment of the present invention;
[0020] FIGS. 28 through 30 are plan views of a transistor according
to a another exemplary embodiment of the present invention.
[0021] FIGS. 31 through 33 are sectional views of a transistor
according to another exemplary embodiment of the present
invention.
[0022] FIGS. 34 and 35 are sectional views illustrating a
modification of a transistor according to another exemplary
embodiment of the present invention.
DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS
[0023] The present invention will now be described more fully with
reference to the accompanying drawings, in which exemplary
embodiments of the invention are shown. The invention may, however,
be embodied in many different forms and should not be construed as
being limited to the exemplary embodiments set forth herein;
rather, these exemplary embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the
concept of the invention to those skilled in the art. In the
drawings, the thickness of layers and regions are exaggerated for
clarity. Like reference numerals in the drawings denote like
elements, and thus their description will be omitted. It will be
understood that when an element such as a layer, region or
substrate is referred to as being "on" or "onto" another element,
it may be directly on the other element or intervening elements may
also be present there between. As used herein, the term
perpendicular may be understood as meaning perpendicular or
substantially perpendicular; a boundary hereafter may be referred
to hereafter as being perpendicular to a substrate surface, which
means perpendicular or substantially perpendicular to the
surface.
[0024] As will be described in more detail hereinafter, in order to
improve a junction abruptness, a channel layer or a junction region
may be defined by anisotrophic etching. Also, junction regions
formed on both sides of the channel region or a channel region
between junction regions may be grown by an epitaxial method.
Accordingly, boundaries between the channel layer and the junction
regions may be formed so as to be perpendicular to a substrate
surface. Thus, a doping profile of the junction region at this
boundary may have a definite abruptness. Accordingly, spreading
resistance and hence junction resistance can be reduced.
[0025] FIGS. 1 through 7 are plan views of a transistor according
to an exemplary embodiment of the present invention, and FIGS. 8
through 15 are sectional views of the transistor shown in FIGS.
1-7. For reference, FIGS. 8, 9A, 10, 11A, 12, 13, 14 and 15A are
sectional views taken along the lines x-x' of FIGS. 1 through 7.
FIGS. 9B, 11B, 13B and 15B are sectional views taken along the
lines y-y' of FIGS. 1 through 7.
[0026] Referring to FIGS. 1 and 8, a junction layer 105 including
impurities may be formed on a semiconductor substrate 100. The
junction layer 105 can be formed by implanting impurities on an
overall surface of the semiconductor substrate 100, performing an
annealing process thereon and activating the impurities.
Alternatively, the junction layer 105 may be a silicon layer
including doped impurities that can be formed by a deposition
process or by a Selective Epitaxial Growth (SEG) process.
[0027] In general, epitaxy is a process by which a thin layer of a
single-crystal material may be deposited on a single-crystal
substrate. Epitaxial growth occurs in such a way that the
crystallographic structure of the substrate is reproduced in the
growing material; also crystalline defects of the substrate may be
reproduced in the growing material. Selective epitaxy is epitaxial
growth on the substrate which is only partially a single-crystal
material, For example, in the case of single crystal silicon (Si)
partially covered with oxide, Si will grow epitaxially only
(selectively) on the surface of a single-crystal Si. A process of
selective epitaxial growth to grow a layer is known as a SEG
process.
[0028] The type of impurities implanted or doped in the junction
layer 105 may be different than the impurities of the substrate
100. For example, the junction layer 105 may have a concentration
of impurities for a source and a drain and may be of a
substantially shallow depth (thickness) suitable for a short
channel transistor. A mask pattern 110, for example a silicon
nitride pattern, may be formed on the junction layer 105 so as to
define an isolation film 115. A trench may then be formed by
etching the exposed semiconductor substrate 100 to a desired, given
depth using the mask pattern 110 as a mask. An isolation film 115
is thus formed by filling the trench with an insulating material.
Although the isolation film 115 may be formed after the formation
of the junction layer 105, the junction layer 105 can be formed
after the isolation film 115 is first formed and then the mask
pattern 110 is removed.
[0029] Referring to FIGS. 2, 9A and 9B, the mask pattern 110 may be
removed by a known method. Then, a hard mask layer 120 may be
deposited on the resulting structure. The hard mask layer 120 may
be a silicon nitride layer and may be provided for anti-reflection
during a photolithography process to be applied to hard mask layer
120. A photoresist pattern 125 may be formed on the hard mask layer
120 so as to expose a region for a gate electrode. A dotted line of
FIG. 2 represents a boundary between the isolation film and the
active region.
[0030] Referring to FIGS. 3 and 10, the semiconductor substrate 100
and the isolation film 115, which are disposed below the junction
layer 105, may be exposed by performing an anisotrophic etching on
the hard mask layer 120 and the junction layer 105 in a shape of
the photoresist pattern 125 that is formed on the hard mask layer
120. A groove or gap 130 may be formed within the junction layer
105 by the anisotrophic etching, so as to define source region 105a
and drain region 105b. Since the source and drain regions 105a and
105b are defined by the anisotrophic etching, their sidewalls may
be formed so as to be perpendicular to the substrate 100
surface.
[0031] Referring to FIGS. 4, 11A and 11B, the photoresist pattern
120 may be removed by a known method. A channel layer 135 may then
be formed by epitaxially growing the exposed semiconductor
substrate 100 in the gap 130 in accordance with a SEG process, for
example. The channel layer 135 may be a non-doped epitaxial layer
(intrinsic epitaxial layer) and/or a doped epitaxial layer
(extrinsic epitaxial layer) including no doped impurity or a doped
impurity. Additionally, in case where impurities are doped into the
channel layer 135, the doped impurities may be n type or p type.
After the formation of the channel layer 135, a chemical mechanical
polishing (CMP) or an etch back process may be performed on the
surface of the semiconductor substrate 100 so as to planarize the
surface of the semiconductor substrate 100. Of course the source
region 105a and drain region 105b may also be formed of an
epitaxial layer having a doped impurity, for example.
[0032] Referring to FIG. 12, a gate oxide layer 140 may be formed
by oxidizing the surface of the exposed channel layer 135. The gate
oxide layer 140 may be formed as part of a process of forming the
gate electrode of the FET.
[0033] Referring to FIGS. 5, 13A and 13B, a conductive layer 145
for the gate electrode may be deposited so as to sufficiently fill
a gap between the hard mask layers 120. The conductive layer 145
for the gate electrode may be a doped poly silicon layer, for
example.
[0034] Referring to FIGS. 6 and 14, the conductive layer 145 may be
chemical mechanical polished to expose the surface of the hard mask
layer 120. Then, the hard mask layer 120 is removed to form the
gate electrode 150. At this time, sidewalls of the gate electrode
150 may substantially align with a boundary between the channel
layer 135 and the source region 105a, and/or a boundary between the
channel layer 135 and drain region 105b, as shown in FIG. 14, for
example. A thermal annealing process can be additionally performed
so as to adjust an overlap length between the gate electrode 150
and the source and drain regions 105a and 105b.
[0035] Referring to FIGS. 7, 15A and 15B, corresponding spacers 155
may be formed on corresponding sidewalls of the gate electrode 150
by a known method. A transition metal layer may then be deposited
on the resulting structure and a thermal process performed thereon
to form a silicide layer 160 on the gate electrode 150, source
region 105a and drain region 105b.
[0036] Referring to FIG. 16, before the formation of the silicide
layer 160, a portion of the isolation film 115 formed at one side
the source and drain regions 105a and 105b may be removed to a
given depth using a suitable etching process. In FIG. 16, this
removed portion of the isolation film 115 may be shown by a notch
in the isolation film 115. In an example, the isolation film 115
may be removed by an amount equal to the depth of the source and
drain regions 105a and 105b. In this manner, surface area of the
silicide layer 160 may be expanded.
[0037] Referring to FIG. 17, after the formation of the channel
layer 135, a given portion of the isolation film 115 disposed in a
width direction of the channel layer 135 may be removed to a given
depth. By doing so, an upper surface of the channel layer 135 and
the side surfaces in the width direction of the channel layer 135
may be exposed. A gate oxide layer 140 may be formed on the surface
of the exposed channel layer 135, and the gate electrode 150 and
the silicide layer 160 may be formed. As shown, the gate electrode
150 may be formed so as to enclose 3-dimensions of the channel
layer 135, such that a FinFET (so called because the free-standing
sidewall spacers of the formed FET resemble fins) using the
3-dimensions as a channel can be formed. Forming a FET such as a
Fin FET as described above may reduce adverse effects of the short
channel effect, and may be applied to a next generation
semiconductor device, for example.
[0038] Referring to FIG. 18, a storage node may be formed after the
gate oxide layer 140 is formed. The storage node may consist of a
floating gate electrode 170 formed of polysilicon layer and an
inter gate insulating layer 175 formed of oxide-nitride-oxide
(ONO), for example. The storage node may be a charge storage unit,
such as a single ONO layer or nano-crystal layer. If the storage
node is embodied as a single ONO layer, the gate oxide layer 140
can be omitted. In this manner, a flash memory can be manufactured
by forming the storage node on a lower portion of the gate
electrode 145. Also as shown in FIG. 18, a flash FinFET can be
manufactured by forming the floating gate electrode 170 and the
inter gate insulating layer 175 once a portion of the isolation
film 115 has been removed to a given depth, for example.
[0039] Referring to FIG. 19, a high mobility material 136 may be
formed on the surface of the channel layer 135. The high mobility
material 136 may be a material layer or stacked structure selected
from the group consisting of C, Si, Ge and combinations thereof.
Like the channel layer 135, the high mobility material 136 may be
formed by a SEG process, for example. Transistor mobility may be
improved by forming the high mobility material 136 on the surface
of the channel layer 135.
[0040] According to the exemplary embodiments of the present
invention as described above, the junction layer 105 may be formed
of a doped silicon layer on the semiconductor substrate 100. The
source and drain regions 105a and 105b may be formed by performing
anisotrophic etching on the junction layer 105. A SEG process may
be performed to fill a gap or groove 130 between the source and
drain regions 105a and 105b, thereby forming the channel layer 135.
Boundaries between the channel layer 135 and the source and drain
regions 105a and 105b may be perpendicular to the surface of the
semiconductor substrate 100, so that the doping profile of the
source and drain regions 105a and 105b has a desired, definite
abruptness. In this manner, junction abruptness may be
improved.
[0041] FIGS. 20 through 22 are plan views of a transistor according
to another exemplary embodiment of the present invention, and FIGS.
23 through 25 are sectional views of the transistor of FIGS. 20-22.
For reference, FIGS. 23A, 24 and 25A are sectional views taken
along the lines x-x' of FIGS. 20 through 22, and FIGS. 23B and 25B
are sectional views taken along the lines y-y' of FIGS. 20 through
22.
[0042] Referring to FIGS, 20, 23A and 23B, a channel layer 205 may
be formed on a semiconductor substrate 200. The channel layer 205
may be formed across part of or across the entire surface of the
semiconductor substrate 200, and may be a doped silicon layer. An
impurity concentration of the channel layer 205 may be that of an
implanted threshold voltage control ion of a FET (i.e.,
ion-implantation process). The channel layer 205 can be formed by
implanting impurities into the semiconductor substrate 200 and
activating the impurities. Also, the channel layer 205 can be
formed by a deposition or a SEG process, for example. If the
channel layer 205 is formed by the deposition or SEG process, the
impurities may be introduced into the channel layer 205 together
with the deposition (growth) at the same time, or may be introduced
into the channel layer 205 by an ion-implantation process after the
channel layer 205 is formed. In an example, the channel layer 205
may have a thickness suitable for the junction depth of the single
channel transistor.
[0043] A mask pattern (such as shown in FIG. 1) for an isolation
film may be formed on the channel layer 205 to expose a region for
an isolation film. The mask pattern for the isolation film may be a
silicon nitride layer, for example. A trench may be then formed by
etching a given portion of the channel layer 205 and the
semiconductor substrate 200 in a shape of the mask pattern. An
isolation film 210 may thus be formed by filling the trench with an
insulating material. The isolation film 210 may also be formed
before the formation of the channel layer 205.
[0044] A gate oxide layer 215, gate electrode material 220 and a
hard mask layer 225 may be sequentially stacked on the isolation
film 210 and the channel layer 205. The gate oxide layer 215 can be
formed by a thermal oxidation process. Also, the gate electrode
material 220 may be a doped polysilicon layer and the hard mask
layer 225 may be a silicon nitride layer. A photoresist pattern 230
may be formed on the hard mask layer 225 so as to define a gate
electrode 222.
[0045] Referring to FIGS. 21 and 24, the hard mask layer 225 and
gate electrode material 220 may be etched using the photoresist
pattern 230 as a mask, thereby defining the gate electrode 222.
Spacers 235 may then be formed on sidewalls of the gate electrode
222. The spacers 235 may be formed by performing a blanket etching
on given thickness. The spacers 235 may be provided for insulation
between the gate electrode 222 and source and drain regions (not
shown), to be formed later. Gaps or exposed regions 240a and 240b
(reserved for the source and drain regions) may be formed by
performing an anisotrophic etching on the exposed gate oxide layer
215 and the channel layer 205 using the gate electrode 222 and the
spacers 235 as a mask. Since the channel layer 205 is patterned by
anisotrophic etching, its sidewalls are perpendicular to the
surface of the semiconductor substrate 200.
[0046] Referring to FIGS. 22, 25A and 25B, a source region 245a and
a drain region 245b may be formed by performing a SEG process on
the semiconductor substrate 200 corresponding to the exposed
regions 240a and 240b. In an example, the source and drain regions
245a and 245b may be grown in a state that impurities are doped.
Then, in some cases, the source and drain regions 245a and 245b may
be planarized to expose the surface of the hard mask layer 225.
Since the boundaries between the channel layer 205 and the source
and drain regions 245a and 245b are perpendicular to the substrate
200 surface, the doping profile of the source and drain regions
245a and 245b has a desired, definite abruptness. Thus, the
junction abruptness can be improved. In addition, the source and
drain regions 245a and 245b `rise up` the upper portion of the
substrate 200 surface. Therefore, although thickness from a bottom
of the gate electrode 222 to a bottom of the source and drain
regions 245a and 245b is shallow, a total thickness of the source
and drain regions 245a and 245b is actually increased, so that the
junction resistance is improved.
[0047] Referring to FIG. 26, a storage node may be formed before
the formation of the gate electrode 222. The storage node may
include a floating gate electrode 250 and an inter gate insulating
layer 255, or a single ONO layer or a nano-crystal layer, for
example. The floating gate electrode 250 may be a doped polysilicon
layer and the inter gate insulating layer 255 may be an ONO layer.
If the storage node is a single ONO layer, the gate oxide layer 215
can be omitted. In this manner, a flash memory can be manufactured
by forming the storage node on a lower portion of the gate
electrode 222.
[0048] Referring to FIG. 27, a high mobility material 212 may be
formed on the surface of the channel layer 205 before the formation
of the gate oxide layer 215. The high mobility material 212 may be
a material layer or stacked structure selected from the group
consisting of C, Si, Ge and combinations thereof. The high mobility
material 212 may be formed by a SEG process, for example.
Transistor mobility may be improved by forming the high mobility
material 212 on the surface of the channel layer 205.
[0049] According to the above exemplary embodiment of the present
invention, the gate electrode 222 and the channel layer 205 may be
defined by the anisotrophic etching, and the source and drain
regions 245a and 245b may be formed or built up on both sides of
the channel layer 205 by the SEG process. Therefore, the boundaries
between the channel layer 205 and the source and drain regions 245a
and 245b may be perpendicular to the surface of the semiconductor
substrate 200, so that the doping profile of the source and drain
regions 245a and 245b has a desired, definite abruptness. In this
manner, junction abruptness may thus be improved.
[0050] FIGS. 28 through 30 are plan views of a transistor according
to another exemplary embodiment of the present invention, and FIGS.
31 through 33 are sectional views of the transistor in FIGS. 28-30.
For reference, FIGS. 31A, 32 and 33 are sectional views taken along
the lines x-x' of FIGS. 28 through 30, and FIG. 31B is a sectional
view taken along the line y-y' of FIG. 28.
[0051] Referring to FIGS. 28, 31A and 31B, a channel layer 305 may
be formed on a semiconductor substrate 300 by the same method as
the above-described embodiments. The channel layer 305 may have a
junction region thickness suitable for a short channel transistor,
for example. An oxide layer 315 and a silicon nitride layer 320 may
be sequentially stacked on the channel layer 305, and given
portions of the silicon nitride layer 320 and the oxide layer 315
patterned to expose a region for a device isolation, thereby
forming a mask pattern for an isolation film. A trench may be
formed by etching given portions of the channel layer 305 and the
semiconductor substrate 300 in a shape of the mask pattern. An
isolation film 310 may be formed by filling the trench with an
insulating material. At this time, the isolation film 310 can be
formed before the formation of the channel layer 305.
[0052] In order to form a damascene gate electrode, a photoresist
pattern (not shown) for opening the region reserved for gate
electrode may be formed on the resulting structure. The exposed
silicon nitride layer 320 may be etched in a shape of the
photoresist pattern (not shown). Also, in order to form a FinFET,
the exposed isolation film 310 may be etched. In FIG. 31B,
reference numeral 310a represents the recessed isolation film 310.
In an example, the surface of the isolation film 310a may be
positioned at a bottom of the channel layer 305 so as to expose the
sidewalls of the channel layer 305. Then, the photoresist pattern
is removed.
[0053] A conductive layer for a gate electrode may be deposited on
the resulting structure. Then, a damascene gate electrode 325 may
be formed by performing a CMP on the conductive layer so as to
expose the surface of the silicon nitride layer 320. In order to
protect the gate electrode 325, a hard mask layer 330 may be formed
by oxidizing the surface of the gate electrode 325.
[0054] When the region for the gate electrode is defined, the oxide
layer 315 as well as the silicon nitride layer 320 may be removed
and then a new gate oxide layer formed before the deposition of the
conductive layer for the gate electrode 325.
[0055] Referring to FIGS. 29 and 32, the gate electrode 325 may be
formed by etching the conductive layer for the gate electrode 325
using the hard mask layer 330 as a mask. Spacers 335 are formed on
both sidewalls of the gate electrode 325. The spacers 335 act as an
insulating layer and can be formed by performing a blanket etching
on an insulating layer to a given thickness or oxidizing the
sidewalls of the gate electrode 325 to a given oxide thickness. The
spacers 335 are provided for insulation between the gate electrode
325 and source and drain region (not shown), which will be formed
later.
[0056] An anisotrophic etching may be performed on the exposed gate
oxide layer 315 and the channel layer 305 using the gate electrode
325 and the spacers 335 as a mask. In this manner, regions or gaps
340a and 340b, reserved for the source and drain regions, may be
formed. Since the channel layer 305 is patterned by the
anisotrophic etching, its sidewalls may be perpendicular to the
surface of the semiconductor substrate 300.
[0057] Referring to FIGS. 30 and 33, source and drain regions 345a
and 345b may be formed via a SEG process, for example, on the
semiconductor substrate 300 disposed at the exposed gaps or 340a
and 340b reserved for the source and drain regions. The source and
drain regions 345a and 345b may be formed on side portions disposed
in a length direction of the channel layer 305. Also, preferably,
the source and drain regions 345a and 345b may be grown in a state
that impurities are doped. Then, in some cases, the source and
drain regions 345a and 345b may be planarized to expose the surface
of the hard mask layer 320.
[0058] As described above, since the source and drain regions 345a
and 345b are formed so as to rise up from the surface of substrate
300, the junction abruptness may be additionally improved. Similar
to as shown in FIGS. 15A and 15B, a silicide layer may also be
formed on the source and drain regions 345a and 345b.
[0059] Referring to FIG. 34, a storage node can be formed before
the gate oxide layer 315 is formed. The storage node may be a
stacked structure of a floating gate electrode 350 and an inter
gate insulating layer 355, or an ONO layer or a nano-crystal layer.
When the storage node is a single ONO layer, the gate oxide layer
315 can be omitted. In this manner, a flash FinFET can be
manufactured by forming the storage node on a lower portion of the
gate electrode 325.
[0060] Referring to FIG. 35, a high mobility material 312 may be
further formed on the surface of the channel layer 305 before the
formation of the gate oxide layer 315. The high mobility material
312 may be a material layer or stacked structure selected from the
group consisting of C, Si, Ge and combinations thereof. The high
mobility material 312 may be formed by a SEG process, for example.
In this manner, a FinFET with an improved mobility can be improved
by forming the high mobility material 312 on the surface of the
channel layer 305.
[0061] According to the above exemplary embodiment of the present
invention, since the channel layer 305 is defined by the
anisotrophic etching, the boundaries between the channel layer 305
and the source and drain regions 345a and 345b may be perpendicular
to the surface of the semiconductor substrate 300, so that the
doping profile of the source and drain regions 345a and 345b has a
desired, definite abruptness. Thus, the junction abruptness is
improved. Also, the transistor according to the exemplary
embodiments of the present invention may have a FinFET structure in
which the gate electrode 325 and the floating gate electrode 350 is
overlapped with the upper and side surfaces of the channel layer
305 to reduce the occurrence of the short channel effect.
[0062] As described above, the source and drain regions (and/or the
channel region) may be defined by the anisotrophic etching, and the
channel region formed between the source and drain regions (and/or
the source and drain regions formed on both sides of the channel
layer) may be formed by a SEG process. Therefore, boundaries
between the channel layer and the source and drain regions may be
perpendicular (i.e., perpendicular or substantially perpendicular)
to the semiconductor substrate, so that the doping profile of the
source and drain regions has a desired abruptness. Thus, the
junction abruptness can be improved and the spreading resistance
occurring at the boundaries of the junction region can be
reduced.
[0063] Even when the junction depth of the source and source
regions (junction region) is reduced, any increase in the junction
resistance may be avoided. Therefore, the single channel effect can
be suppressed so that the on current of the transistor can be
improved.
[0064] The exemplary embodiments of the present invention being
thus described, it will be obvious that the same may be varied in
many ways. Such variations are not to be regarded as departure from
the spirit and scope of the exemplary embodiments of the present
invention, and all such modifications as would be obvious to one
skilled in the art are intended to be included within the scope of
the following claims.
* * * * *