U.S. patent application number 11/156275 was filed with the patent office on 2005-12-22 for etching reaction device with protrusions.
This patent application is currently assigned to INNOLUX DISPLAY CORP.. Invention is credited to Gau, Sheng-Chou, Huang, Chang Kuei, Huang, Chih Hung, Huang, Ching-Feng, Huang, Jung-Lung, Ou, Chen-Hsien.
Application Number | 20050279452 11/156275 |
Document ID | / |
Family ID | 35479368 |
Filed Date | 2005-12-22 |
United States Patent
Application |
20050279452 |
Kind Code |
A1 |
Huang, Ching-Feng ; et
al. |
December 22, 2005 |
Etching reaction device with protrusions
Abstract
An etching reaction device (3) includes an etching reaction
chamber (30), and a number of protrusions (301) arranged on the
bottom of the etching reaction chamber. Thus it can economize the
etching time and quickly complement the concentration of the
etching liquid near to a wafer (7). The protrusions can reduce the
capability of the etching reaction chamber, thus it can economize
the etching liquid.
Inventors: |
Huang, Ching-Feng; (Miao-Li,
TW) ; Huang, Jung-Lung; (Miao-Li, TW) ; Huang,
Chang Kuei; (Miao-Li, TW) ; Ou, Chen-Hsien;
(Miao-Li, TW) ; Huang, Chih Hung; (Miao-Li,
TW) ; Gau, Sheng-Chou; (Miao-Li, TW) |
Correspondence
Address: |
WEI TE CHUNG
FOXCONN INTERNATIONAL, INC.
1650 MEMOREX DRIVE
SANTA CLARA
CA
95050
US
|
Assignee: |
INNOLUX DISPLAY CORP.
|
Family ID: |
35479368 |
Appl. No.: |
11/156275 |
Filed: |
June 17, 2005 |
Current U.S.
Class: |
156/345.11 |
Current CPC
Class: |
H01L 21/67086
20130101 |
Class at
Publication: |
156/345.11 |
International
Class: |
C23F 001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 18, 2004 |
TW |
93117730 |
Claims
What is claimed is:
1. An etching reaction device, comprising: an etching reaction
chamber; and a plurality of protrusions arranged on a bottom of the
etching reaction chamber.
2. The etching reaction device as claimed in claim 1, further
comprising an etching liquid entrance associated with the bottom of
the etching reaction chamber.
3. The etching reaction device as claimed in claim 2, further
comprising an etching liquid transport pipe connected with the
etching liquid entrance.
4. The etching reaction device as claimed in claim 1, further
comprising a plurality of rollers in the etching reaction
chamber.
5. The etching reaction device as claimed in claim 1, wherein the
protrusions are made of polyvinylidene difluoride.
6. The etching reaction device as claimed in claim 1, wherein the
protrusions are step-shaped.
7. The etching reaction device as claimed in claim 1, wherein the
protrusions are columnar.
8. The etching reaction device as claimed in claim 1, wherein the
protrusions tapered in cross-section.
9. The etching reaction device as claimed in claim 1, wherein the
protrusions are triangular in cross-section.
10. The etching reaction device as claimed in claim 1, wherein the
protrusions are rectangular in cross-section.
11. A method of making etching comprising: providing an etching
device with an etching reaction chamber; forming a plurality of
protrusions on at least one interior surface of said etching device
in communication with the etching reaction chamber; and injecting
etching liquid into the chamber; wherein said protrusions performs
at least one of functions of even distribution and convection.
12. The method as claimed in claim 11, wherein the protrusions
surround a liquid entrance of said etching liquid.
13. The method as claimed in claim 11, wherein the protrusions and
a liquid entrance of the etching liquid are located on a same
interior face of the etching device.
14. The method as claimed in claim 13, wherein a wafer ready for
etching is spatially located above both said liquid entrance and
said protrusions.
15. An etching reaction device, comprising: an etching reaction
chamber; a plurality of protrusions disposed in the etching
reaction chamber; and a wafer located above said protrusions;
wherein etching liquid moves in said chamber under effects derived
from said protrusions.
16. The etching reaction device as claimed in claim 15, wherein
said protrusions are formed on a bottom interior face of the
etching device.
17. The etching reaction device as claimed in claim 16, wherein an
etching liquid entrance is located on the bottom interior face.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to an etching reaction device
typically used for etching a wafer such as a semiconductor
wafer.
BACKGROUND
[0002] In a typical process of manufacturing a semiconductor wafer,
a film is formed on the semiconductor wafer. If the film is not
uniform or a thickness of the film is not according to
specifications, the film is generally removed altogether.
[0003] Nowadays, popular etching methods include dry etching
methods and wet etching methods. A typical etching reaction device
for wet etching is shown in FIG. 3. The etching reaction device 1
uses etching liquid that chemically reacts with the film, whereby
the film can be removed.
[0004] The etching reaction device 1 includes an etching reaction
chamber 10, an etching liquid transporting pipe 12, an etching
liquid entrance 15, and a plurality of rollers 16. The etching
liquid entrance 15 is set at a bottom of the etching reaction
chamber 10, and is connected with the etching liquid transporting
pipe 12. The rollers 16 are set inside the etching reaction chamber
10.
[0005] When a wafer 5 is to be etched by the etching reaction
device 1, the wafer 5 is set on the rollers 16 such that the wafer
5 can slide along the rollers 16. The etching liquid enters the
etching reaction chamber 10 through the etching liquid transporting
pipe 12 and the etching liquid entrance 15. The etching liquid
reaches the wafer 5, and chemically reacts with the film of the
wafer 5. The film of the wafer 5 transforms into another substance,
which substance dissolves in the etching liquid. Thus the film is
removed from the wafer 5.
[0006] The wafer 5 is set on the rollers 16, and the film of the
wafer 5 chemically reacts only with etchant in the etching liquid
has reached the wafer 5. Thus the concentration of the etching
liquid near the wafer 5 is lower than that in other areas of the
etching reaction chamber 10. The higher concentration etching
liquid in the other areas of the etching reaction chamber 10
travels toward the wafer 5 and replenishes and replaces the lower
concentration etching liquid at the wafer 5. That is, higher
concentration etching liquid flows until it is blocked by sides of
the etching reaction chamber 10, whereupon the higher concentration
etching liquid rises toward the wafer 5. Thus circulation of
etching liquid occurs because of the convection phenomenon.
[0007] However, particularly in cases where the etching reaction
chamber 10 is large, the etching liquid takes a long time to flow
from the etching liquid entrance 15 to the sides of the etching
reaction chamber 10. That is, the efficiency of circulation of the
etching liquid is low. The etching liquid near the wafer 5 may not
be timely replenished and replaced, and so the wafer 5 may not be
etched uniformly.
[0008] What is needed, therefore, is a new etching reaction device
which overcome the above-described problems.
SUMMARY
[0009] In one embodiment, an etching reaction device comprises an
etching reaction chamber, and a plurality of protrusions arranged
on the bottom of the etching reaction chamber.
[0010] The protrusions arranged on the bottom of the etching
reaction chamber are provided for redirecting a flow of etching
liquid. When the etching liquid flows in the etching reaction
chamber, it is blocked by the protrusions and rises toward a wafer.
The plural protrusions help plural circulations of etching liquid
because of the convection phenomenon. Therefore, the lower
concentration etching liquid near the wafer is continuously
replenished and replaced by higher concentration etching liquid
traveling thereof from the other areas of the etching reaction
chamber. Thus it can economize the etching time. And it can quickly
complement the concentration of the etching liquid near to the
wafer, thus the wafer is etched uniformly. The protrusions can
reduce the capability of the etching reaction chamber. Thus, it can
economize the etching liquid.
[0011] Other advantages and novel features will become more
apparent from the following detailed description when taken in
conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic, cross-sectional view of an etching
reaction device according to an exemplary embodiment of the present
invention, together with a wafer placed therein.
[0013] FIG. 2 is an isometric view of the etching reaction device
of FIG. 1, but not showing rollers thereof and not showing the
wafer.
[0014] FIG. 3 is a schematic, cross-sectional view of a typical
etching reaction device, together with a wafer placed therein.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0015] Referring to FIG. 1 and FIG. 2, an etching reaction device
according to an exemplary embodiment of the present invention is
shown. The etching reaction device 3 includes an etching reaction
chamber 30, an etching liquid transport pipe 32, an etching liquid
entrance 35, a plurality of rollers 36, and a plurality of
protrusions 301.
[0016] The etching liquid entrance 35 is set at the bottom 39 of
the etching reaction chamber 30, and is connected with the etching
liquid transporting pipe 32. The plurality of rollers 16 is set
inside the etching reaction chamber 30. The plurality of
protrusions 301 is set on the bottom 39 of the etching reaction
chamber 30.
[0017] When a wafer 7 is etched by the etching reaction device 3.
The wafer 7 is set on the rollers 36, and can slide along the
rollers 36. The etching liquid enters the etching reaction chamber
30 through the etching liquid transporting pipe 32 and the etching
liquid entrance 35. The etching liquid reaches the wafer 7, and
chemically reacts with a film of the wafer 7. The film of the wafer
7 is transformed into another substance, which substance can be
dissolved in the etching liquid. Thus the film can be removed from
the wafer 7.
[0018] The film of the wafer 7 chemically reacts with etchant in
the etching liquid which has reached the wafer 7. Thus the
concentration of the etching liquid near the wafer 7 is lower than
that in other areas of the etching reaction chamber 30. The higher
concentration etching liquid in the other areas of the etching
reaction chamber 30 travels toward the wafer 7 and replenishes and
replaces the lower concentration etching liquid at the wafer 7.
[0019] The protrusions 301 arranged on the bottom 39 of the etching
reaction chamber 30 are provided for redirecting a flow of the
etching liquid. When the etching liquid flows in the etching
reaction chamber 30, it is blocked by the protrusions 301 and rises
toward the wafer 7. The plural protrusions 301 help generate plural
circulations of etching liquid, because of the convection
phenomenon. A distance between each protrusion 301 and the etching
liquid entrance 35 is shorter than a distance between the
corresponding side 33 of the etching reaction chamber 30 and the
etching liquid entrance 35. Thus the etching liquid flowing from
the etching liquid entrance 35 flows to each protrusion 301 quicker
than it does to the corresponding side 33. This can reduce the time
required to etch the wafer 7. In addition, as described above, the
lower concentration etching liquid near the wafer 7 is continuously
replenished and replaced by higher concentration etching liquid
traveling thereto from the other areas of the etching reaction
chamber 30. This helps ensure that the wafer 7 is etched
uniformly.
[0020] Because the cubage of the etching reaction chamber 30 is
aptotic. The protrusions 301 on the bottom 39 of the etching
reaction chamber 30 reduce the capacity of the etching reaction
chamber 30 while simultaneously providing for improved flow of the
etching liquid. Accordingly, the amount of etching liquid required
is reduced. That is, the etching reaction device 3 can economize on
the use of etching liquid.
[0021] In the exemplary embodiment, the protrusions 301 are made of
polyvinylidene difluoride, and are tapered in cross-section. The
protrusions 301 can, for example, alternatively be step-shaped,
columnar, triangular in cross-section, or rectangular in
cross-section.
[0022] It is to be further understood that even though numerous
characteristics and advantages of various embodiments have been set
forth in the foregoing description, together with details of the
structures and functions of the embodiments, the disclosure is
illustrative only, and changes may be made in detail, especially in
matters of shape, size, and arrangement of parts within the
principles of the invention to the full extent indicated by the
broad general meaning of the terms in which the appended claims are
expressed.
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