U.S. patent application number 11/102744 was filed with the patent office on 2005-11-17 for semiconductor light emitting device and semiconductor light emitting apparatus.
This patent application is currently assigned to Kabushiki Kaisha Toshiba. Invention is credited to Akaike, Yasuhiko, Ohashi, Kenichi, Sugawara, Yasuharu, Sugiyama, Hitoshi.
Application Number | 20050253157 11/102744 |
Document ID | / |
Family ID | 35308574 |
Filed Date | 2005-11-17 |
United States Patent
Application |
20050253157 |
Kind Code |
A1 |
Ohashi, Kenichi ; et
al. |
November 17, 2005 |
Semiconductor light emitting device and semiconductor light
emitting apparatus
Abstract
A first semiconductor light emitting device comprises: a
transparent substrate; a light emitting layer; and a roughened
region. The transparent substrate has a first major surface and a
second major surface, and is translucent to light in a first
wavelength band. The light emitting layer is selectively provided
in a first portion on the first major surface of the transparent
substrate and configured to emit light in the first wavelength
band. The roughened region is provided in a second portion
different from the first portion on the first major surface. A
second semiconductor light emitting device comprises: a transparent
substrate; a light emitting layer; a first electrode; and at least
one groove. The groove is provided on the second major surface of
the transparent substrate and is extending from a first side face
to a second side face opposing the first side face of the
transparent substrate.
Inventors: |
Ohashi, Kenichi;
(Kanagawa-ken, JP) ; Akaike, Yasuhiko;
(Kanagawa-ken, JP) ; Sugiyama, Hitoshi;
(Kanagawa-ken, JP) ; Sugawara, Yasuharu;
(Kanagawa-ken, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
Kabushiki Kaisha Toshiba
Tokyo
JP
|
Family ID: |
35308574 |
Appl. No.: |
11/102744 |
Filed: |
April 11, 2005 |
Current U.S.
Class: |
257/95 ; 257/98;
257/E33.074 |
Current CPC
Class: |
H01L 33/22 20130101;
H01L 33/20 20130101 |
Class at
Publication: |
257/095 ;
257/098 |
International
Class: |
H01L 033/00 |
Foreign Application Data
Date |
Code |
Application Number |
May 17, 2004 |
JP |
2004-146231 |
Claims
1. A semiconductor light emitting device comprising: a transparent
substrate having a first major surface and a second major surface,
and being translucent to light in a first wavelength band; a light
emitting layer selectively provided in a first portion on the first
major surface of the transparent substrate and configured to emit
light in the first wavelength band; and a roughened region provided
in a second portion different from the first portion on the first
major surface.
2. A semiconductor light emitting device according to claim 1,
wherein the first portion is a center portion on the first major
surface, and the second portion is a periphery portion surrounding
the first portion on the first major surface.
3. A semiconductor light emitting device according to claim 1,
wherein the first portion includes a center portion on the first
major surface and a periphery portion distantly surrounding the
center portion, part of the periphery portion being connected to
the center portion, and the second portion is a portion located
between the center portion and the periphery portion.
4. A semiconductor light emitting device according to claim 1,
wherein irregularities constituting the roughened region has an
average bottom length of 0.1 to 3 micrometers.
5. A semiconductor light emitting device according to claim 1,
wherein irregularities constituting the roughened region has an
average height of 0.05 to 1.5 micrometers.
6. A semiconductor light emitting device according to claim 1,
wherein the first portion has an area of 0.6 to 0.9 times the area
of the first major surface.
7. A semiconductor light emitting device according to claim 1,
wherein the transparent substrate is made of GaP, and the light
emitting layer is made of InGaAlP-based compound semiconductor.
8. A semiconductor light emitting device comprising: a transparent
substrate having a first major surface and a second major surface
and being translucent to light in a first wavelength band; a light
emitting layer provided on the first major surface of the
transparent substrate and configured to emit light in the first
wavelength band; a first electrode provided on the light emitting
layer; a second electrode provided on the second major surface of
the transparent substrate: and a first groove provided on the
second major surface of the transparent substrate and extending
from a first side face to a second side face opposing the first
side face of the transparent substrate.
9. A semiconductor light emitting device according to claim 8,
wherein the first groove has a first beveled surface and a second
beveled surface, each beveled surface being oblique with respect to
the second major surface.
10. A semiconductor light emitting device according to claim 8,
wherein the first groove has a curved surface.
11. A semiconductor light emitting device according to claim 8,
wherein at least part of an inner wall of the first groove is
provided with one or more roughened regions.
12. A semiconductor light emitting device according to claim 8,
wherein a second groove is formed on the second major surface of
the transparent substrate, the second groove intersecting with the
first groove at a substantially right angle.
13. A semiconductor light emitting device according to claim 8,
wherein width of the first groove becomes wider from a center
thereof toward the first and second side faces.
14. A semiconductor light emitting device according to claim 8,
wherein the first major surface has a first portion and a second
portion, the light emitting layer is provided on the first portion,
and a roughened region is provided on the second portion.
15. A semiconductor light emitting device according to claim 14,
wherein irregularities constituting the roughened region has an
average bottom length of 0.1 to 3 micrometers.
16. A semiconductor light emitting device according to claim 14,
wherein irregularities constituting the roughened region has an
average height of 0.05 to 1.5 micrometers.
17. A semiconductor light emitting device according to claim 8,
wherein the transparent substrate is made of GaP, and the light
emitting layer is made of InGaAlP-based compound semiconductor.
18. A semiconductor light emitting apparatus comprising: a
packaging member having a mounting surface; and a semiconductor
light emitting device having: a transparent substrate having a
first major surface and a second major surface and being
translucent to light in a first wavelength band; a light emitting
layer provided on the first major surface of the transparent
substrate and configured to emit light in the first wavelength
band; a first electrode provided on the light emitting layer; a
second electrode provided on the second major surface of the
transparent substrate; and at least one groove provided on the
second major surface of the transparent substrate and extending
from a first side face to a second side face opposing the first
side face of the transparent substrate, the semiconductor light
emitting device being mounted on the mounting surface, with the
second major surface facing the mounting surface.
19. A semiconductor light emitting apparatus according to claim 18,
wherein the packaging member has a light reflecting surface facing
the first and second side faces.
20. A semiconductor light emitting apparatus according to claim 18,
wherein at least part of an inner wall of the groove is provided
with one or more roughened regions.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2004-146231, filed on May 17, 2004; the entire contents of which
are incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] This invention relates to a semiconductor light emitting
device and a semiconductor light emitting apparatus using a
transparent substrate, and more particularly to a semiconductor
light emitting device and a semiconductor light emitting apparatus
having a structure suitable to achieving sufficient optical
output.
[0003] Semiconductor light emitting devices, especially light
emitting diodes (LEDs), have been widely used for such applications
as full-color displays, traffic signal equipment, and in-vehicle
applications. These applications particularly require the devices
with higher optical output.
[0004] Conventionally, typical LEDs of this type have a structure
in which a light emitting layer having a p-n junction is formed on
the upper surface of a transparent substrate having a generally
rectangular cross section and being translucent to the emission
wavelength. For the purpose of electrical connection, the light
emitting layer is provided with an upper surface electrode on its
upper surface side and a lower surface electrode on its lower
surface side.
[0005] In a LED configured as described above, part of the light
emitted from the p-n junction has an incident angle not greater
than the critical angle and can be extracted outside the LED.
However, light having an incident angle greater than the critical
angle is totally reflected, subjected to multiple reflections
inside the LED, and finally vanished by absorption in the light
emitting layer or the transparent substrate. This presents a
problem that LEDs having a high optical output cannot be
obtained.
[0006] In this respect, a LED having an upper surface on which a
roughened light extraction region is formed, and a LED having a
lower surface on which a recessed portion of generally spherical
shape is formed, are known (see, e.g., Japanese Laid-Open Patent
Application 10-200156 (1998), page 3, FIG. 4 (hereinafter referred
to as Patent Document 1); or Japanese Laid-Open Patent Application
9-92878 (1997), page 4, FIG. 1 (hereinafter referred to as Patent
Document 2)).
[0007] The LED disclosed in Patent Document 1 is a LED of the
so-called mesa-structure, which has downward curved surfaces in the
upper portion of an AlGaAs semiconductor substrate having a p-n
junction. The LED comprises a light extraction region made of a
rough surface on the upper surface of the p-type semiconductor
region, and a light reflection region having a collection of
numerous microsurfaces on the lower surface of the n-type
semiconductor region, and another light extraction region made of a
rough surface on the curved surface formed by mesa etching.
[0008] The LED disclosed in Patent Document 2 has a light
reflection region with a recessed portion of generally spherical
shape formed on the lower surface of an AlGaAs semiconductor
substrate having a p-n junction by photolithography and
etching.
[0009] However, the LED disclosed in Patent Document 1 or 2
described above has a problem that, when the LED has a chip size as
large as, for example, 0.5 to 1 mm in order to obtain higher
optical output, light emitted from the light emitting layer is
subjected to multiple reflections inside the LED and absorbed by
the light emitting layer many times, which increases the proportion
of vanished light and prevents accomplishment of a LED with higher
optical output.
SUMMARY OF THE INVENTION
[0010] According to an aspect of the invention, there is provided a
semiconductor light emitting device comprising: a transparent
substrate having a first major surface and a second major surface,
and being translucent to light in a first wavelength band; a light
emitting layer selectively provided in a first portion on the first
major surface of the transparent substrate and configured to emit
light in the first wavelength band; and a roughened region provided
in a second portion different from the first portion on the first
major surface.
[0011] According to other aspect of the invention, there is
provided a semiconductor light emitting device comprising: a
transparent substrate having a first major surface and a second
major surface and being translucent to light in a first wavelength
band; a light emitting layer provided on the first major surface of
the transparent substrate and configured to emit light in the first
wavelength band; a first electrode provided on the light emitting
layer; a second electrode provided on the second major surface of
the transparent substrate; and a first one groove provided on the
second major surface of the transparent substrate and extending
from a first side face to a second side face opposing the first
side face of the transparent substrate.
[0012] According to other aspect of the invention, there is
provided a semiconductor light emitting apparatus comprising: a
packaging member having a mounting surface; and a semiconductor
light emitting device having: a transparent substrate having a
first major surface and a second major surface and being
translucent to light in a first wavelength band; a light emitting
layer provided on the first major surface of the transparent
substrate and configured to emit light in the first wavelength
band; a first electrode provided on the light emitting layer; a
second electrode provided on the second major surface of the
transparent substrate; and a first one groove provided on the
second major surface of the transparent substrate and extending
from a first side face to a second side face opposing the first
side face of the transparent substrate, the semiconductor light
emitting device being mounted on the mounting surface, with the
second major surface facing the mounting surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 shows a semiconductor light emitting device according
to a first embodiment of the invention, in particular, FIG. 1A is a
plan view thereof, and FIG. 1B is a cross section along line A-A in
FIG. 1A;
[0014] FIG. 2 illustrates the operation of the semiconductor light
emitting device according to the first embodiment of the invention,
in particular, FIG. 2A is a cross section showing an optical path
in the LED, and FIG. 2B shows an optical intensity distribution of
the LED;
[0015] FIG. 3 shows a light emitting layer formed on a GaAs
substrate in a process of manufacturing a semiconductor light
emitting device according to the first embodiment of the
invention;
[0016] FIG. 4 shows the light emitting layer bonded to a
transparent substrate in the process of manufacturing a
semiconductor light emitting device according to the first
embodiment of the invention;
[0017] FIGS. 5A through 5D sequentially show a process of forming a
rough surface portion in the process of manufacturing a
semiconductor light emitting device according to the first
embodiment of the invention;
[0018] FIGS. 6A and 6B show a process of scribing a wafer in the
process of manufacturing a semiconductor light emitting device
according to the first embodiment of the invention;
[0019] FIG. 7 is a cross section showing a semiconductor light
emitting apparatus using a semiconductor light emitting device
according to the first embodiment of the invention;
[0020] FIG. 8 shows a semiconductor light emitting device according
to a second embodiment of the invention, in particular, FIG. 8A is
a plan view thereof, and FIG. 8B is a cross section along line B-B
in FIG. 8A;
[0021] FIGS. 9A and 9B show a semiconductor light emitting device
according to a third embodiment of the invention, in particular,
FIG. 9A is a bottom view thereof, and FIG. 9B is a cross section
along line C-C in FIG. 9A;
[0022] FIG. 9C is a schematic perspective view showing the
semiconductor light emitting device mounted on the mounting surface
of a packaging member;
[0023] FIG. 9D is a side view showing that light L1 emitted from
the end portions of grooves 53, 54 is reflected on the reflecting
surface of the packaging member;
[0024] FIG. 9E is a cross section showing a semiconductor light
emitting device having roughened regions 52P formed on the beveled
surfaces 52;
[0025] FIG. 10A is a cross section illustrating a process of
forming grooves having beveled surfaces according to the third
embodiment of the invention;
[0026] FIG. 10B is a plan view illustrating a process of forming
grooves having beveled surfaces according to the third embodiment
of the invention;
[0027] FIG. 11 shows a semiconductor light emitting device
according to a fourth embodiment of the invention, in particular,
FIG. 11A is a bottom view thereof, and FIG. 11B is a cross section
along line D-D in FIG. 11A;
[0028] FIG. 11C is a cross section showing a semiconductor light
emitting device having roughened regions 62P formed on the curved
surfaces 62;
[0029] FIG. 12 shows a semiconductor light emitting device
according to a fifth embodiment of the invention, in particular,
FIG. 12A is a plan view thereof, and FIG. 12B is a cross section
along line E-E in FIG. 12A; and
[0030] FIG. 12C is a cross section showing a semiconductor light
emitting device having roughened regions 52P formed on the beveled
surfaces 52.
DETAILED DESCRIPTION OF THE INVENTION
[0031] Embodiments of the invention will now be described with
reference to the drawings.
First Embodiment
[0032] FIG. 1 shows a semiconductor light emitting device according
to a first embodiment of the invention. In particular, FIG. 1A is a
plan view thereof, and FIG. 1B is a cross section cut along line
A-A in FIG. 1A and viewed in the direction of the arrows. This
embodiment is an example of a semiconductor light emitting device
comprising a light emitting layer of InGaAlP-based material
directly bonded to a GaP transparent substrate without the use of
adhesives.
[0033] As shown in FIG. 1, the semiconductor light emitting device
11 (hereinafter simply referred to as LED) of this embodiment
comprises a transparent substrate 12 being translucent to the
emission wavelength, a light emitting layer 13 having a p-n
junction formed at the center of a first major surface of the
transparent substrate 12, a first electrode 14 formed on the
surface of the light emitting layer 13, a second electrode 15
formed on a second major surface of the transparent substrate 12
opposite to the first major surface of the transparent substrate
12, and a roughened region 16 formed on the periphery of the first
major surface surrounding the light emitting layer 13.
[0034] Next, the operation of the LED 11 will be described in
detail with reference to the drawings. FIG. 2A schematically shows
an optical path of light emitted from the light emitting layer 13,
reflected on the second major surface of the transparent substrate
12, and radiated outside from the first major surface side, as
compared to the conventional LED. The right side, R, of the center
line "a" is a cross section showing the optical path in the LED 11,
and the left side, L, is a cross section showing the optical path
in the conventional LED. FIG. 2B schematically shows a horizontal
optical intensity distribution of the LED 11 as compared to the
conventional LED. The right side, R, of the center O shows the
optical intensity distribution of the LED 11, and the left side, L,
shows the optical intensity distribution of the conventional
LED.
[0035] As shown in FIG. 2A, light "b", emitted from the light
emitting layer 13 downward into the transparent substrate 12,
reflected on the second major surface of the transparent substrate
12, and reaching the roughened region 16 without passing through
the light emitting layer 13, is mostly extracted outside the
transparent substrate 12 without being reflected back toward the
second major surface side.
[0036] On the other hand, in the conventional LED, light "c",
emitted from the light emitting layer 13 downward into the
transparent substrate 12 and reflected on the second major surface
of the transparent substrate 12, passes through the light emitting
layer 13. While part of the light is extracted outside the
transparent substrate 12, most of the light is reflected on the
upper surface of the light emitting layer 13, passes through the
light emitting layer 13 again, and experiences multiple
reflections.
[0037] That is, while the light "b" in the LED 11 experiences a
single occurrence of absorption by the light emitting layer, the
light "c" in the conventional LED experiences at least three
occurrences of absorption.
[0038] As shown in FIG. 2B, since current flowing through the light
emitting layer 13 is generally attenuated as a function of the
distance from the first electrode 14, the optical output is
decreased with the distance from the first electrode 14. For this
reason, as the chip size becomes larger, the conventional LED is
more likely to exhibit an optical intensity distribution "d" having
an optical output sharply decreased on the periphery of the
transparent substrate 12.
[0039] On the other hand, in the LED 11, the light emitting layer
13 is not formed on the periphery of the transparent substrate 12
where otherwise absorption of passing light is greater in
proportion than light emission. Therefore the proportion of emitted
light absorbed by the light emitting layer 13 can be reduced.
[0040] As a result, an optical intensity distribution "e" can be
obtained, which has a smaller decrease of optical output on the
periphery of the transparent substrate 12. This can enhance the
optical output by an amount indicated by the hatched portion
"f".
[0041] According to experiments, the optical output was enhanced
when the ratio of the area, S2, of the light emitting layer 13 to
the area, S1, of the transparent substrate 12 is about 0.6 to 0.9.
Since the optical output is decreased as the ratio deviates from
this range, it is appropriate and preferable that the ratio of the
area S2 of the light emitting layer 13 to the area S1 of the
transparent substrate 12 be in the range of about 0.6 to 0.9.
[0042] This is because, when the ratio of the area S2 of the light
emitting layer 13 to the chip area S1 is smaller than 0.6, the
amount of light emission itself from the light emitting layer 13 is
decreased, which results in insufficient optical output. On the
other hand, when the ratio is greater than 0.9, the proportion of
light from the light emitting layer 13 absorbed by the light
emitting layer 13 is not significantly different from the
conventional case.
[0043] Advantageously, in order to prevent light reflection,
irregularities in the roughened region 16 have an average bottom
length of about 0.1 to 3 .mu.m, and an average height equal to or
greater than 0.5 times the bottom length. Since the optical output
is decreased with deviation from this range, it is appropriate and
preferable that the irregularities have an average bottom length of
about 0.1 to 3 .mu.m, and an average height of about 0.5 times the
bottom length. That is, it is desirable that the average height of
irregularities be about 0.05 to 1.5 .mu.m.
[0044] This is because a surface of irregularities less than about
a fraction of the wavelength of light is substantially identical to
a mirror surface, and a surface of irregularities greater than
several times the wavelength of light is not favorable to diffuse
reflection of light, in view of the fact that light is diffusely
reflected on the irregular surface and contributes to enhancing the
efficiency of light extraction from the transparent substrate
12.
[0045] In addition, it is more preferable that the area of the
first electrode 14 be minimized as long as the connecting conductor
such as gold wiring can be connected.
[0046] In the LED 11 configured as described above, a light
emitting layer 13 having a p-n junction is formed at the center of
the first major surface of the transparent substrate 12, and the
periphery surrounding the light emitting layer 13 is roughened.
Therefore a larger proportion of light reflected on the second
major surface of the transparent substrate 12 is extracted outside
from the roughened region 16 without being absorbed by the light
emitting layer 13, which enables to achieve sufficient optical
output.
[0047] Next, description will be made on a LED comprising a
transparent substrate 12 of GaP and a light emitting layer 13 made
of InGaAlP-based material, and a specific example of manufacturing
a semiconductor light emitting apparatus using this LED.
[0048] FIGS. 3 to 6 illustrate a process of manufacturing the LED
11. FIG. 3 is a cross section showing a light emitting layer made
of InGaAlP-based material formed on a GaAs substrate. FIG. 4 is a
cross section showing a light emitting layer made of InGaAlP-based
material bonded to a GaP substrate. FIG. 5 sequentially shows a
process of forming a roughened region on the LED on which
electrodes have been formed. FIG. 6 shows a process of dividing a
wafer having LEDs formed thereon into chips.
[0049] As shown in FIG. 3, on an n-GaAs substrate 21 having a
thickness of 250 .mu.m, an n-GaAs buffer layer 22 having a
thickness of 0.5 .mu.m is formed by MOCVD method. Subsequently, an
InGaP etching stop layer 23 having a thickness of 0.2 .mu.m, an
n-GaAs contact layer 24 having a thickness of 0.1 .mu.m, an n-InAlP
cladding layer 25 having a thickness of 1 .mu.m, an InGaAlP MQW
active layer 26 having a thickness of 1 .mu.m, a p-InAlP cladding
layer 27 having a thickness of 1 .mu.m, and a p-InGaP bonding layer
28 having a thickness of 0.05 .mu.m are sequentially stacked.
[0050] Here, the active layer 26 is not limited to the multiple
quantum well (MQW) structure, but can also be configured as a
single heterostructure (SH), double heterostructure (DH), or
quantum well heterostructure (QWH).
[0051] Next, as shown in FIG. 4, the p-InGaP bonding layer 28 is
brought into intimate contact with the first major surface of the
p-GaP transparent substrate 12, and subjected to heat treatment at
800.degree. C., for example.
[0052] Next, the GaAs substrate 21 and the GaAs buffer layer 22 are
selectively etched away using ammonia-based etchant. Furthermore,
the InGaP etching stop layer 23 is selectively etched away by
hydrochloric acid.
[0053] In this way, the p-InGaP bonding layer 28 is coupled to the
p-GaP transparent substrate 12 at an atomic level to obtain a LED
comprising a light emitting layer 13 directly bonded to the
transparent substrate 12 without the use of translucent adhesives
(insulator).
[0054] Next, as shown in FIG. 5A, the surface of the light emitting
layer 13 is patterned with first electrodes 14 primarily composed
of AuGe. A second electrode 15 primarily composed of AuZn is then
formed on the second major surface of the p-GaP transparent
substrate 12.
[0055] Next, as shown in FIG. 5B, a resist film 31 is formed on the
light emitting layer 13. Then, as shown in FIG. 5C, the resist film
31 is used as a mask to selectively etch away the light emitting
layer 13 by, for example, hydrochloric acid at room temperature for
30 seconds, to expose the first major surface of the p-GaP
transparent substrate 12.
[0056] Next, as shown in FIG. 5D, the p-GaP transparent substrate
12 is etched by, for example, hydrofluoric acid at room temperature
for 20 minutes, to form a roughened region 16 on the periphery of
the first major surface of the p-GaP transparent substrate 12 so
that the roughened region 16 surrounds the light emitting layer 13,
irregularities in the roughened region 16 having an average bottom
length of 1 to 3 .mu.m, and an average height substantially equal
to the bottom length.
[0057] Next, as shown in FIG. 6, the wafer 32 having LEDs formed
thereon is divided into chips by using a scriber (not shown) to
scribe the transparent substrate 12 from the second electrode 15
side with a diamond pen 33. This results in completion of the LED
11 shown in FIG. 1, in which a light emitting layer 13 is located
at the center of the transparent substrate 12 and a roughened
region 16 surrounding the light emitting layer 13 is located on the
periphery of the transparent substrate 12.
[0058] FIG. 7 is a cross section showing a semiconductor light
emitting apparatus using the LED 11 shown in FIG. 1. As shown in
FIG. 7, the LED 11 is mounted in a reflecting cup 35 formed on a
lead frame 34a so that the light emitting layer serves as a light
emitting observed surface. The second electrode is fixed to the
bottom of the reflecting cup 35 with a conductive adhesive. The
first electrode is connected to a lead frame 34b with gold wiring
36.
[0059] Finally, a semiconductor light emitting apparatus 38 is
obtained by being molded with transparent resin 37. The optical
output of this semiconductor light emitting apparatus 38 is
enhanced 30% or more as compared to semiconductor light emitting
apparatus using a LED of conventional structure.
[0060] As described above, according to this embodiment, the
proportion of light from the light emitting layer absorbed by the
light emitting layer is reduced, which enables to achieve a
semiconductor light emitting device having sufficient optical
output. Therefore a semiconductor light emitting apparatus having
high optical output can be provided.
[0061] The foregoing has described a light emitting layer 13 of
rectangular shape and a first electrode 14 of circular shape.
However, both the light emitting layer 13 and the first electrode
14 may be of rectangular shape, or of circular shape. If the light
emitting layer 13 is similar to the first electrode 14, the
distance from the first electrode 14 to the edge of the light
emitting layer 13 remains generally constant. This provides an
advantage of equalizing the in-plane distribution of optical output
of the LED 11.
[0062] In addition, the semiconductor light emitting apparatus of
the invention is not limited to those using a lead frame, but
includes various types such as a surface mounting device (SMD) type
in which a semiconductor light emitting device is mounted on a
packaging board, and a stem type in which a semiconductor light
emitting device is mounted on a stem.
Second Embodiment
[0063] FIG. 8 shows a semiconductor light emitting device according
to a second embodiment of the invention. In particular, FIG. 8A is
a plan view thereof, and FIG. 8B is a cross section cut along line
B-B in FIG. 8A and viewed in the direction of the arrows. In this
embodiment, like components as in the first embodiment are marked
with like reference numerals and will not be described further.
[0064] The second embodiment is different from the first embodiment
in that a light emitting layer is formed on each of the center and
periphery of the first major surface of the transparent substrate
and that a roughened region is formed between the light emitting
layers of the center and the periphery.
[0065] More specifically, as shown in FIG. 8, the LED 41 of this
embodiment comprises a circular light emitting layer 42a formed at
the center of a first major surface of the transparent substrate
12, a rectangular light emitting layer 42b formed at the periphery,
and a roughened region 43 formed between the light emitting layers
42a and 42b surrounding the light emitting layer 42a.
[0066] A circular first electrode 14 is formed on the light
emitting layer 42a. A rectangular first electrode 44 is formed on
the light emitting layer 42b. The first electrode 14 is
electrically connected to the first electrode 44 via wiring 45.
[0067] The roughened region 43 is made by, for example, treating
the surface of the GaP transparent substrate 12 with inductive
coupled plasma (ICP) in an Ar/Cl.sub.2 gas atmosphere, followed by
immersion into hydrochloric acid. Protrusions of rectangular
pyramid shape are formed in the roughened region 43, where the
irregularities have an average bottom length of 0.5 to 2 .mu.m and
an average height substantially equal to the bottom length.
[0068] In the LED 41 configured as described above, a region
between the light emitting layers 42a and 42b formed at the center
and the periphery, respectively, of the first major surface of the
transparent substrate 12 is roughened so that the region surrounds
the light emitting layer 42a. Therefore a larger proportion of
light reflected on the second major surface of the transparent
substrate 12 is extracted outside from the roughened region 43
without being absorbed by the light emitting layers 42a and 42b,
which enables to achieve sufficient optical output.
[0069] As described above, according to this embodiment, the
periphery is also provided with a light emitting layer 42b, which
provides an advantage that the in-plane distribution of optical
output of the LED 41 can be further equalized.
Third Embodiment
[0070] FIGS. 9A and 9B show a semiconductor light emitting device
according to a third embodiment of the invention. In particular,
FIG. 9A is a bottom view thereof, and FIG. 9B is a cross section
cut along line C-C in FIG. 9A and viewed in the direction of the
arrows. In this embodiment, like components as in the first
embodiment are marked with like reference numerals and will not be
described further.
[0071] As shown in FIGS. 9A and 9B, the LED 51 of this embodiment
comprises grooves 53, 54 extending from one side to the other
opposing side of the transparent substrate 12. Each of the grooves
53, 54 has beveled surfaces 52 on the second major surface of the
transparent substrate 12 diverging from the first major surface
side toward the second major surface side.
[0072] The grooves 53 and 54 intersect with each other at a
generally right angle at the center of the transparent substrate
12. Second electrodes 55 are formed on the remaining second major
surface where the grooves 53, 54 are not formed.
[0073] In the LED 51 configured as described above, a larger
proportion of light emitted from the light emitting layer 13 toward
the second major surface of the transparent substrate 12 can have
an incident angle below the critical angle. This results in
reducing the proportion of light being subjected to multiple
reflections on the second major surface of the transparent
substrate 12 and absorbed by the light emitting layer 13. The
proportion of light extracted from the beveled surfaces 52 is thus
increased.
[0074] Therefore the light extracted from the beveled surfaces 52
is repeatedly reflected on the mounting surface of the packaging
member such as a reflecting cup (not shown) of a lead frame and on
the beveled surfaces 52. Part of the reflected light can be
extracted outside from the end portions of the grooves 53, 54.
[0075] FIG. 9C is a schematic perspective view showing the
semiconductor light emitting device mounted on the mounting surface
of a packaging member.
[0076] More specifically, the semiconductor light emitting device
51 of this embodiment is mounted on the mounting surface 35P such
as the bottom of the reflecting cup of a lead frame, with the
grooves 53, 54 of the semiconductor light emitting device 51 facing
down. Light L1 emitted from the light emitting layer via the
beveled surfaces 52 of the grooves 53, 54 toward the mounting
surface 35P is repeatedly reflected between the mounting surface
35P and the beveled surfaces 52 and radiated outside from the end
portions of the grooves 53, 54 as shown in the figure. That is, the
grooves 53, 54 serve as waveguides for emitting the light L1 from
the side faces.
[0077] FIG. 9D is a side view showing that light L1 emitted from
the end portions of grooves 53, 54 is reflected on the reflecting
surface of the packaging member.
[0078] More specifically, the light L1 emitted from the end
portions of grooves 53, 54 is reflected on the reflecting surface
35R such as the reflecting cup 35 of a lead frame, and extracted
upward. As a result, the light extraction efficiency can be further
enhanced.
[0079] Returning again to FIGS. 9A and 9B, the angle .theta.
between the beveled surface 52 and the normal to the transparent
substrate 12 is preferably selected to be in the vicinity of about
27 degrees (critical angle) when the transparent substrate 12 is
made of GaP and molded with transparent resin composed of epoxy
resin, because their refractive index for red light is 3.3 and 1.5,
respectively. In general, a suitable angle is in the range of about
20 to 40 degrees.
[0080] In addition, as the area of the beveled surface 52
increases, the amount of light having an incident angle below the
critical angle increases. It is thus desirable to increase the area
as long as the mechanical strength of the LED 51 is not
compromised.
[0081] Moreover, as shown in FIG. 9E, roughened regions 52P
provided on the beveled surfaces 52 can further enhance the light
extraction efficiency. More specifically, when the beveled surfaces
52 are provided thereon with roughened regions 52P made of
irregularities similar to those described with reference to the
first and second embodiments, the light extraction efficiency via
the beveled surfaces 52 can be enhanced, and thus a stronger light
L1 can be extracted from the end portions of the grooves 53, 54
served as waveguides.
[0082] A method of manufacturing the foregoing LED will now be
described with reference to FIG. 10. FIG. 10 is a cross section
illustrating a process of forming grooves 53, 54 having beveled
surfaces 52 on a wafer having numerous LEDs formed thereon.
[0083] As shown in FIG. 10A, a wafer 57 having LEDs formed thereon
is stuck to a dicing sheet (not shown) with second electrodes 55 of
the wafer 57 facing up. A dicing blade 58 having a V-shaped cross
section is used to half-dice the wafer 57 from the second electrode
55 side at a predetermined pitch.
[0084] Next, the wafer 57 is rotated by 90 degrees and half-diced
in a direction orthogonal to the dicing grooves from the second
electrode 55 side at a predetermined pitch.
[0085] FIG. 10B is a bottom view showing part of the wafer 57
having arrays of V-shaped grooves that have been cut as described
above.
[0086] Next, the half-diced V-shaped grooves 53, 54 are etched by,
for example, mixture of hydrochloric acid and hydrogen peroxide
solution, to remove any grinding damage layer due to dicing. The
wafer 57 is then divided into chips to obtain the LED 51 shown in
FIG. 9.
[0087] Subsequently, as in FIG. 7, the LED 51 is fixed to the
reflecting cup 35 of a lead frame 34a using, for example, eutectic
mounting with gold-tin alloy, to obtain a semiconductor light
emitting apparatus.
[0088] As described above, according to this embodiment, light
emitted from the light emitting layer toward the second major
surface is extracted outside from the beveled surfaces 52 formed on
the second major surface. This reduces the proportion of light
subjected to multiple reflections on the second major surface and
the upper surface of the light emitting layer 13 and absorbed by
the light emitting layer 13, which results in a semiconductor light
emitting device having sufficient optical output. Therefore a
semiconductor light emitting apparatus having high optical output
can be provided.
[0089] Moreover, the rectangular cross section of the transparent
substrate 12 contributes to more uniform stress due to molded resin
as compared to a LED having a trapezoidal cross section. This
provides an advantage of preventing occurrence of failures such as
chip lifting and cracking, and enhancing reliability. In addition,
chip handling is facilitated.
[0090] The foregoing has described the case where the beveled
surfaces 52 are diced and then etched. However, as illustrated in
FIG. 9E, roughened regions 52P can be further formed on the beveled
surfaces 52. The roughened regions 52P can be formed by the method
described above with reference to the first or second
embodiment.
Fourth Embodiment
[0091] FIGS. 11A and 11B show a semiconductor light emitting device
according to a fourth embodiment of the invention. In particular,
FIG. 11A is a bottom view thereof, and FIG. 11B is a cross section
cut along line D-D in FIG. 11A and viewed in the direction of the
arrows. In this embodiment, like components as in the first
embodiment are marked with like reference numerals and will not be
described further.
[0092] The fourth embodiment is different from the third embodiment
in that grooves having a curved surface are formed on the second
major surface of the transparent substrate, with the curved surface
being opened from the first major surface side toward the second
major surface side and being curved toward the first major surface
side.
[0093] More specifically, as shown in FIGS. 11A and 11B, the LED 61
of this embodiment comprises grooves 63, 64 having a curved surface
62 and extending from one side to the other opposing side of the
transparent substrate 12, where the grooves 63, 64 are provided on
the second major surface of the transparent substrate 12, and the
curved surface 62 is opened from the first major surface side
toward the second major surface side and curved toward the first
major surface side.
[0094] The grooves 63 and 64 intersect with each other at a
generally right angle at the center of the transparent substrate
12, and have a groove width diverging from the center toward the
side faces. Second electrodes 65 are formed on the remaining second
major surface of the transparent substrate 12 where the grooves 63,
64 are not formed.
[0095] Light extracted from the curved surface 62 of the grooves
63, 64 having a groove width diverging from the center toward the
side faces is repeatedly reflected on the bottom surface of the
reflecting cup (not shown) and on the curved surface 62 as it
travels toward the side face. Thus the grooves 63, 64 serve as
waveguides as in the third embodiment, and can further increase the
proportion of light extracted outside from the side faces.
[0096] The grooves 63, 64 having a curved surface and a diverging
groove width can be formed by, for example, using a resist film as
a mask and etching by mixture of hydrochloric acid and hydrogen
peroxide solution.
[0097] As described above, the LED 61 includes grooves 63, 64 on
the second major surface of the transparent substrate 12, with
grooves 63, 64 having a groove width diverging from the center
toward the side faces. As a result, the optical output extracted
from the side faces can be further increased.
[0098] Moreover, as shown in FIG. 11C, roughened regions 62P
provided on the curved surface 62 of the grooves 63, 64 can further
enhance the light extraction efficiency. More specifically, when
the curved surface 62 is provided thereon with roughened regions
62P as described with reference to the first and second
embodiments, the light extraction efficiency via the curved surface
62 can be enhanced. As a result, the intensity of light extracted
outside from the end portions of the grooves 63, 64 can be
increased.
Fifth Embodiment
[0099] FIG. 12 shows a semiconductor light emitting device
according to a fifth embodiment of the invention. In particular,
FIG. 12A is a plan view thereof, and FIG. 12B is a cross section
cut along line E-E in FIG. 12A and viewed in the direction of the
arrows. In this embodiment, like components as in the first
embodiment are marked with like reference numerals and will not be
described further.
[0100] The fifth embodiment is different from the third embodiment
in including both a roughened region formed on the first major
surface of the transparent substrate where the light emitting layer
is not formed, and grooves having beveled surfaces on the second
major surface diverging from the first major surface side toward
the second major surface side.
[0101] More specifically, as shown in FIG. 12, the LED 71 of this
embodiment comprises a transparent substrate 12 being translucent
to the emission wavelength, a light emitting layer 13 having a p-n
junction formed at the center of a first major surface of the
transparent substrate 12, a first electrode 14 formed on the
surface of the light emitting layer 13, and a roughened region 16
formed on the periphery of the first major surface surrounding the
light emitting layer 13.
[0102] Moreover, the LED 71 comprises grooves 53, 54 formed on a
second major surface opposing a first major surface of the
transparent substrate 12 and extending from one side to the other
opposing side of the transparent substrate 12. Each of the grooves
53, 54 has beveled surfaces 52 on the second major surface of the
transparent substrate 12 diverging from the first major surface
side toward the second major surface side. A second electrode 55 is
formed on the part of the second major surface where the grooves
53, 54 are not formed. The grooves 53, 54 serves as waveguides as
described above with reference to the third embodiment to enhance
the light extraction efficiency.
[0103] As described above, according to this embodiment, light can
be extracted from both the roughened region 16 and the grooves 53,
54, which enable to achieve a semiconductor light emitting device
having higher optical output.
[0104] As shown in FIG. 12C, also in this embodiment, roughened
regions 52P provided on the beveled surfaces 52 of the grooves 53,
54 can further enhance the light extraction efficiency. That is, as
described above with reference to the third embodiment, roughened
regions 52P formed on the beveled surfaces 52 can enhance the
efficiency of light extraction from the beveled surfaces 52. As a
result, the intensity of light extracted outside from the end
portions of the grooves 53, 54 can be increased.
[0105] The above embodiments are described with reference to a GaP
transparent substrate and an InGaAlP light emitting layer. However,
the invention is not limited thereto. Any substrate transparent to
the emission wavelength may be used without particular limitation.
For example, the invention is also applicable to a blue LED using a
sapphire substrate and an infrared LED using a GaAs substrate.
[0106] Furthermore, it is to be understood that the roughened
region may be formed on a portion of the surface of the light
emitting layer where the first electrode is not formed, or on the
side face of the transparent substrate.
[0107] While the present invention has been disclosed in terms of
the embodiment in order to facilitate better understanding thereof,
it should be appreciated that the invention can be embodied in
various ways without departing from the principle of the invention.
Therefore, the invention should be understood to include all
possible embodiments and modification to the shown embodiments
which can be embodied without departing from the principle of the
invention as set forth in the appended claims.
* * * * *