U.S. patent application number 11/180692 was filed with the patent office on 2005-11-10 for assemblies displaying differential negative resistance.
Invention is credited to Campbell, Kristy A..
Application Number | 20050247927 11/180692 |
Document ID | / |
Family ID | 30114545 |
Filed Date | 2005-11-10 |
United States Patent
Application |
20050247927 |
Kind Code |
A1 |
Campbell, Kristy A. |
November 10, 2005 |
Assemblies displaying differential negative resistance
Abstract
The invention includes a device displaying differential negative
resistance characterized by a current-versus-voltage profile having
a peak-to-valley ratio of at least about 9. The invention also
includes a semiconductor construction comprising a substrate, and a
first layer over the substrate. The first layer comprises Ge and
one or more of S, Te and Se. A second layer is over the first
layer. The second layer comprises M and A, where M is a transition
metal and A is one or more of O, S, Te and Se. A third layer is
over the second layer, and comprises Ge and one or more of S, Te
and Se. The first, second and third layers are together
incorporated into an assembly displaying differential negative
resistance. Additionally, the invention includes methodology for
forming assemblies displaying differential negative resistance,
such as tunnel diode assemblies.
Inventors: |
Campbell, Kristy A.; (Boise,
ID) |
Correspondence
Address: |
DICKSTEIN SHAPIRO MORIN & OSHINSKY LLP
2101 L Street, NW
Washington
DC
20037
US
|
Family ID: |
30114545 |
Appl. No.: |
11/180692 |
Filed: |
July 14, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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11180692 |
Jul 14, 2005 |
|
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10193529 |
Jul 10, 2002 |
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Current U.S.
Class: |
257/30 ;
257/E29.081; 257/E29.339; 257/E47.001; 257/E47.005 |
Current CPC
Class: |
H01L 47/005 20130101;
H01L 29/88 20130101; H01L 29/267 20130101; H01L 47/00 20130101 |
Class at
Publication: |
257/030 |
International
Class: |
H01L 029/06 |
Claims
1-18. (canceled)
19. A composition containing Ag and Se, and comprising at least 4
quantized energy levels which are accessed when the composition is
exposed to voltages having an absolute value of from 0 to 3.5
volts.
20. The composition of claim 19 comprising at least 6 quantized
energy levels which are accessed when the composition is exposed to
the voltages having an absolute value of from 0 to 3.5 volts.
21. The composition of claim 19 comprising at least 10 quantized
energy levels which are accessed when the composition is
composition to the voltages having an absolute value of from 0 to
3.5 volts.
22. The composition of claim 19 comprising at least 15 quantized
energy levels which are accessed when the composition is exposed to
the voltages having an absolute value of from 0 to 3.5 volts.
23. The composition of claim 19 comprising at least 20 quantized
energy levels which are accessed when the composition is exposed to
the voltages having an absolute value of from 0 to 3.5 volts.
24. The composition of claim 19 consisting essentially of Ag and
Se.
25. The composition of claim 19 consisting essentially of
Ag(.sub.2+.DELTA.)Se, where .DELTA. is greater than 0.
26-125. (canceled)
Description
TECHNICAL FIELD
[0001] The invention pertains to semiconductor constructions, such
as, for example, assemblies displaying differential negative
resistance. The invention also pertains to methods of forming
assemblies displaying differential negative resistance. In
particular aspects, the assemblies displaying differential negative
resistance are tunnel diode assemblies.
BACKGROUND OF THE INVENTION
[0002] Assemblies displaying differential negative resistance, such
as tunnel diode assemblies, can be used as components in various
types of circuits, including, for example, logic circuits, and
microwave oscillators. It can therefore be desired to incorporate
assemblies displaying differential negative resistance into
integrated circuit structures.
[0003] Various devices can be characterized in terms of the current
passing through the devices relative to the amount of voltage
applied to the devices. Some devices, such as, for example, tunnel
diodes, will have an operating region in which an ohmic
relationship of current as a function of voltage breaks down, and
where a tunneling effect begins. A plot of current-versus-voltage
for the devices will have a region referred to as the differential
negative resistance (DNR) region, characterized by a non-ohmic
relationship of current to voltage, and comprising a maximum in
current value (typically referred to as a peak current value), and
a minimum in current value (typically referred to as a valley
current value).
[0004] The ratio of the current at the peak to the current at the
valley can be utilized as a figure-of-merit for a device displaying
differential negative resistance. Higher peak-to-valley ratios are
considered to indicate better-quality devices. Presently, the
highest peak-to-valley ratios obtained for integrated circuit
tunnel diode devices are less than 8. It would be desirable to
develop better devices displaying differential negative resistance
which can be incorporated into integrated circuits.
[0005] It would also be desirable to develop methodology for
incorporating such devices into integrated circuit
constructions.
SUMMARY OF THE INVENTION
[0006] In one aspect, the invention pertains to a device displaying
differential negative resistance characterized by a
current-versus-voltage profile having a peak-to-valley ratio of at
least about 9.
[0007] In one aspect, the invention pertains to a semiconductor
construction comprising a substrate, and a first layer over the
substrate. The first layer comprises Ge and one or more of S, Te
and Se. A second layer is over the first layer. The second layer
comprises M and A, where M is a transition metal and A is one or
more of O, S, Te and Se. A third layer is over the second layer,
and comprises Ge and one or more of S, Te and Se. The first, second
and third layers are together incorporated into an assembly
displaying differential negative resistance.
[0008] In one aspect, the invention encompasses a semiconductor
construction which includes a substrate and an assembly displaying
differential negative resistance supported by the substrate. The
assembly comprises a material which includes Ge, a transition
metal, and one or more of S, Te and Se.
[0009] The invention also encompasses methodology for forming the
constructions and structures described above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Preferred embodiments of the invention are described below
with reference to the following accompanying drawings.
[0011] FIG. 1 is a diagrammatic, cross-sectional view of a
semiconductor wafer fragment at a preliminary processing stage in
accordance with an aspect of the present invention.
[0012] FIG. 2 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 1.
[0013] FIG. 3 is a view of the FIG. 1 fragment shown at a
processing stage subsequent to that of FIG. 2.
[0014] FIG. 4 is a view of a semiconductor wafer fragment shown at
a processing stage subsequent to that of FIG. 1, and in accordance
with a second aspect of the invention.
[0015] FIG. 5 is a view of the FIG. 4 fragment shown at a
processing stage subsequent to that of FIG. 4.
[0016] FIG. 6 is a view of the FIG. 4 fragment shown at a
processing stage subsequent to that of FIG. 5.
[0017] FIG. 7 is a view of the FIG. 4 fragment shown at a
processing stage subsequent to that of FIG. 6.
[0018] FIG. 8 is a graph of current-versus-voltage for an exemplary
device displaying differential negative resistance formed in
accordance with an aspect of the present invention.
[0019] FIG. 9 is a graph of current-versus-voltage for the
so-called first tunnel region of an exemplary device displaying
differential negative resistance formed in accordance with an
aspect of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0020] A first aspect of the invention is described with reference
to FIGS. 1-3. Referring initially to FIG. 1, a semiconductor
fragment 10 is illustrated at a preliminary processing stage.
Fragment 10 comprises a substrate 12. Substrate 12 can comprise,
for example, monocrystalline silicon. To aid in interpretation of
the claims that follow, the terms "semiconductive substrate" and
"semiconductor substrate" are defined to mean any construction
comprising semiconductive material, including, but not limited to,
bulk semiconductive materials such as a semiconductive wafer
(either alone or in assemblies comprising other materials thereon),
and semiconductive material layers (either alone or in assemblies
comprising other materials). The term "substrate" refers to any
supporting structure, including, but not limited to, the
semiconductive substrates described above.
[0021] A layer 14 is formed over substrate 12. Layer 14 is an
optional insulative material, and can comprise, for example,
silicon dioxide, silicon nitride, borophosphosilicate glass (BPSG),
and/or other insulative materials. Additionally, various conductive
structures (not shown) can extend into or through insulative
material 14. Such conductive structures can comprise part of an
integrated circuit supported by semiconductor substrate 12.
[0022] A conductive material 16 is formed over insulative material
14. Conductive material 16 can comprise, for example, various
metals, such as, for example, one or more of silver, tungsten,
titanium and platinum. In particular aspects, conductive material
16 can comprise titanium nitride, either alone, or in conjunction
with one or more metals and/or metal alloys. Accordingly,
conductive 16 can comprise, consist essentially of, or consist of
one or more of Ag, W, Ti, TiN and Pt. Additionally, layer 16 can
comprise a conductively-doped semiconductive material. Layer 16 can
be referred to as a bottom electrode in the discussion that
follows.
[0023] Referring to FIG. 2, a layer 18 is formed over bottom
electrode 16. Layer 18 can be referred to as a first layer of an
assembly displaying differential negative resistance (such as a
tunnel diode assembly), and can comprise Ge and one or more of S,
Te and Se.
[0024] In particular applications, layer 18 will comprise, consist
essentially of, or consist of Ge and Se. For instance, layer 18 can
comprise, consist essentially of, or consist of
Ge.sub.xSe.sub.(1-x), such as, for example, Ge.sub.0.4Se.sub.0.6
(also referred to as Ge.sub.40Se.sub.60).
[0025] Layer 18 can be formed by, for example, either sputter
deposition or evaporative deposition. If layer 18 is formed by
sputter deposition, it can be formed from a target comprising both
Ge and Se, and comprising the Ge and Se in a ratio which is
identical to, or approximately, the desired ratio of the elements
in layer 18. Accordingly, if the desired ratio of
Ge.sub.40Se.sub.60 is to be formed in layer 18, the layer can be
sputter-deposited from a target comprising approximately 60 parts
Se for every 40 parts Ge. The target can be a mosaic target.
[0026] If layer 18 is formed by evaporative deposition, the layer
can be formed by providing a source of Ge and a source of Se within
a reaction chamber, and subsequently evaporating Ge and Se from the
sources at appropriate rates to form the layer 18 having the
desired stoichiometry of Ge and Se.
[0027] In the shown embodiment, layer 18 is physically against
bottom electrode 16. It is to be understood, however, that optional
intervening materials (not shown) can be provided between layers 16
and 18.
[0028] A layer 20 is formed over layer 18. Layer 20 can be referred
to as a second layer of a construction displaying differential
negative resistance. Layer 20 comprises M and A, where M is a
transition metal and A is one or more of O, S, Te and Se. The M and
A are typically present in a stoichiometry of M.sub.(2+.DELTA.)A,
where .DELTA. is greater than 0. The transition metal (M) can be,
for example, a metal selected from Group IB of the periodic table
(also referred to as Group 11 under the so-called new notation),
and accordingly can be copper or silver, for example. In particular
embodiments, second layer 20 will comprise, consist essentially of,
or consist of Ag.sub.(2+.DELTA.)A, or Cu.sub.(2+.DELTA.)A, where A
is O, S, Te, and/or Se.
[0029] Layer 20 can be formed by, for example, either sputter
deposition or evaporative deposition. In the shown aspect of the
invention, layer 20 is physically against an upper surface of layer
18. Layer 20 can be formed by directly depositing a layer
comprising M.sub.(2+.DELTA.)A, or by depositing a layer which is
subsequently converted to M.sub.(2+.DELTA.)A. For instance, layer
20 can be formed by initially depositing a layer of Ag.sub.2Se, and
subsequently diffusing additional Ag into the layer from regions
proximate the layer to convert the layer to
Ag.sub.(2+.DELTA.)Se.
[0030] A layer 22 is formed over layer 20. Layer 22 can be referred
to as a third layer of an assembly displaying differential negative
resistance, and can comprise the same materials described
previously for first layer 18. Accordingly, layer 22 can comprise,
consist essentially of, or consist of Ge and one or more of S, Te
and Se. Layer 22 can be formed by, for example, either sputter
deposition or evaporative deposition. In the shown aspect of the
invention, layer 22 is physically against an upper surface of
second layer 20.
[0031] An electrically conductive layer 24 is formed over layer 22.
Layer 24 can comprise the same metal (M) as is utilized in layer
20. Alternatively, layer 24 can comprise a different metal than is
utilized in layer 20. In particular applications, layer 24 will
comprise, consist essentially of, or consist of one or more
transition elements. In an exemplary application, layer 24 will
comprise, consist essentially of, or consist of silver. Layer 24 is
typically very thin, and can comprise, for example, a thickness
less than 300 angstroms, and in particular applications a thickness
less than 50 angstroms. Conductive material 24 is physically
against an upper surface of material 22 in the shown aspect of the
invention.
[0032] A conductive material 26 is formed over layer 24. Conductive
material 26 can be referred to as a top electrode of an assembly
displaying differential negative resistance. Conductive material 26
can comprise identical materials as described above for
incorporation into conductive material 16. Accordingly, bottom
electrode 16 and top electrode 26 can comprise identical
compositions as one another. Alternatively, top electrode 26 can
comprise a different chemical composition than does bottom
electrode 16. In particular applications, top electrode 26 will
comprise, consist essentially of, or consist of one or both of
tungsten and silver.
[0033] In the shown application, top electrode 26 is physically
against conductive material 24. If material 26 and conductive layer
24 both comprise silver, the top electrode 26 can be formed in a
separate processing step from silver-containing layer 24. Further,
top electrode 26 can comprise a different silver composition than
does layer 24. Specifically, layer 24 can consist of very pure
silver, whereas layer 26 can comprise a sliver alloy, such, for
example, a copper/silver alloy. If top electrode 26 comprises
silver, it can be advantageous to omit thin layer 24 from the
construction 10 of FIG. 2.
[0034] In the construction 10 of FIG. 2, layers 18 and 22 can be
electrically insulative, and can be referred to as glass layers.
Further, layers 18 and 22 can be significantly thinner than the
layer 20 provided between layers 18 and 22. For instance, layers 18
and 22 can each be thinner than layer 20 by at least about 300
angstroms. In an exemplary application, layers 18 and 20 can each
have thicknesses of at least about 150 angstroms, and the layer 20
can have a thickness of at least about 450 angstroms. In a specific
application, layers 18 and 22 can each have thicknesses of about
150 angstroms, and layer 20 can have a thickness of about 470
angstroms.
[0035] Referring to FIG. 3, layers 16, 18, 20, 22, 24 and 26 are
patterned into a construction 30. Such patterning can be
accomplished by, for example, photolithographic processing utilized
in conjunction with an appropriate etch, or series of etches, for
extending a desired pattern through layers 16, 18, 20, 22, 24 and
26. In particular aspects, construction 30 can correspond to a
tunnel diode construction.
[0036] Construction 30 is shown electrically connected with
potentials 32 and 34 through top and bottom electrodes 16 and 26,
respectively. Potential 32 is positive relative to potential 34, as
indicated by the "+" and "-" symbols shown in FIG. 3. Potentials 32
and 34 can be utilized to drive current through construction 30,
and accordingly operate construction 30 as part of an integrated
circuit assembly. Construction 30 can be incorporated into the
assembly as, for example, either a part of logic circuitry, or as
part of a microwave oscillator construction. Potentials 32 and 34
can be generated by other circuitry (not shown) associated with
substrate 12 and incorporated within an integrated circuit
comprising construction 30.
[0037] Another aspect of the invention is described with reference
to FIGS. 4-7. In referring to FIGS. 4-7, similar numbering will be
utilized as was used above in describing the aspect of FIGS. 1-3,
where appropriate.
[0038] Referring initially to FIG. 4, a construction 50 is
illustrated at a preliminary stage of the second aspect of the
invention. Construction 50 comprises substrate 12, insulative
material 14, and bottom electrode 16 of the FIG. 1 construction.
The construction 50 can be formed in processing subsequent to that
described above with reference to FIG. 1, and accordingly can
correspond to a processing stage subsequent to the stage of FIG.
1.
[0039] A material 52 is formed over bottom electrode 16. In the
shown embodiment, material 52 is formed physically against bottom
electrode 16. Material 52 comprises Ge and one or more of S, Te and
Se. Material 52 can comprise, for example, Ge.sub.xSe.sub.y, where
"x" is from about 20 to about 30, and where "y" is from about 70 to
about 80. The sum of x and y can be 100. Alternatively,
Ge.sub.xSe.sub.y, can be expressed as comprising "x" from about 0.2
to about 0.3, "y" from about 0.7 to about 0.8, and "x"+"y" equal to
1.
[0040] In particular applications, layer 52 will comprise
Ge.sub.25Se.sub.75. In the shown application, layer 52 is formed
physically against bottom electrode 16.
[0041] A conductive material 54 is formed in a layer over material
52. In the shown application, layer 54 is formed physically against
material 52. Layer 54 can comprise, consist essentially of, or
consist of a transition metal. In particular applications, layer 54
can comprise, consist essentially of, or consist of one or more
transition metals selected from Group IB of the periodic table of
the elements. For instance, layer 54 can comprise, consist
essentially of, or consist of copper or silver. In an exemplary
application, material 52 comprises Ge.sub.xSe.sub.y, where "x" is
from about 20 to about 30, and where "y" is from about 70 to about
80; and layer 54 comprises, consists essentially of, or consists of
silver. Layer 54 can be formed to a thickness of, for example,
about 100 .ANG. and layer 52 can be formed to a thickness of, for
example, about 500 .ANG..
[0042] Referring to FIG. 5, layer 54 is exposed to light 56 having
an appropriate energy to cause at least some of the metal from
layer 54 to disperse within material 52 (with the dispersed metal
being indicated by stippling throughout material 52). Light 56 can
comprise ultraviolet light. In an exemplary application a suitable
wavelength of light 56 can be from about 200 nanometers to about
600 nanometers, which can disperse silver from layer 54 into
material 52.
[0043] The amount of transition metal dispersed from layer 54 into
material 52 is preferably equal to or greater than an amount which
saturates material 52, but less than the amount which will
crystallize separate phases of germanium-comprising constituents
from within material 52. For instance, if material 52 comprises
Ge.sub.25Se.sub.75, and layer comprises silver, the amount of
silver dispersed into material 52 will preferably be sufficient to
form phase-separated silver within the Ge/Se/Ag material 52 formed
by dispersion of the silver into material 52. However, the amount
of silver dispersed into material 52 will preferably be a low
enough concentration to avoid crystallization of Ge/Se materials
from within material 52. If such crystallization occurs, such can
break a potential within the material and impede or destroy
operation of a tunnel diode (or other device displaying
differential negative resistance) comprising the material.
[0044] Material 52 and layer 54 can be formed by either sputter
deposition or evaporative deposition. It is noted that even though
only some of the metal of layer 54 is shown dispersed into material
52 in the shown application, the invention can encompass other
applications wherein an entirety of layer 54, or substantially an
entirety of the layer 54, is dispersed into material 52.
[0045] Referring to FIG. 6, a conductive material 26 is formed over
layer 54. Conductive material 26 can be referred to as a top
electrode, and can comprise identical components as described with
reference to FIG. 2 for the material 26 of construction 10.
Accordingly, material 26 can comprise, consist essentially of, or
consist of Ag, W, Ti, TiN, TaN and/or Pt; and in particular
embodiments can comprise, consist essentially of, or consist of one
or both of Ag and W. In the shown application, material 26 is
formed physically against the layer 54.
[0046] Referring to FIG. 7, layers 16, 52, 54 and 26 are patterned
into an assembly 60. Such patterning can be accomplished utilizing
photolithographic processing and one or more suitable etches. The
assembly 60 can correspond to a tunnel diode assembly.
[0047] The bottom electrode 16 is electrically connected with a
potential 32, and the top electrode 26 is electrically connected
with a potential 34. The potential 32 is positive relative to the
potential 34. Potentials 32 and 34 can, as described above with
reference to FIG. 3, be part of an integrated circuit structure
comprising assembly 60.
[0048] The construction 60 can function comparably to the
construction 30 of FIG. 3. However, it may be more difficult to
specifically tailor construction 60 for a particular desired
operation than to tailor construction 30. However, it can, in
particular applications, be easier to accomplish the fabrication of
construction 60 than that of construction 30. Accordingly, both
construction 60 and construction 30 can have advantages and
disadvantages relative to one another.
[0049] The devices displaying differential negative resistance
displaying differential negative resistance formed in accordance
with aspects of the present invention can have exceptional
operating characteristics. Such characteristics are described with
reference to FIGS. 8 and 9. FIG. 8 illustrates a graph of current
(measured in microAmps) versus voltage (measured in Volts) for a
device of the type described with reference to FIG. 3, in which
layers 18 and 22 comprise Ge.sub.40Se.sub.60, and in which layer 20
comprises Ag.sub.(2+.DELTA.)Se, with .DELTA. being greater than 0.
The curve of FIG. 8 demonstrates that the device has a first tunnel
region (or DNR) 100 at a voltage slightly above -0.5 Volts. FIG. 8
also shows that discreet quantum sets (illustrated generally by
arrows 102 and 104) occur at about -2.0 Volts and at about -3.0
Volts. The discrete quantum sets indicate that the
Ag.sub.(2+.DELTA.)Se of the device comprises at least about 20
quantized energy levels (the number of peaks in sets 102 and 104,
and which can also include the peak 100) when the layer is exposed
to voltages having an absolute value of from 0 volts to 3.5 volts.
In particular aspects, the material having the quantized energy
levels can be considered to comprise, consist essentially of, or
consist of Ag and Se. Further, the number of quantized energy
levels can be considered to be, for example, at least 4, at least
6, at least 10, at least 15 and at least 20. The quantized energy
levels can, in particular aspects, be considered resonances
(possibly discrete or separate relative to one another) induced
when the material is exposed to appropriate voltages between 0
volts and -3.5 volts (or, more generally, to appropriate voltages
having an absolute value of from greater than 0 volts to 3.5
volts).
[0050] Referring to FIG. 9, the first tunnel region of a device
formed in accordance with an aspect of the present invention is
shown on an expanded scale relative to the scale of FIG. 8, in a
graph 150 of current-versus-voltage. In accordance with convention,
the device is described as having a peak (200) at about -0.3 volts
and a valley (202) at about -0.6 volts. It is noted that the peak
and valley are shown inverted in the graph of FIG. 9, but
convention would be to flip the graph so that the peak-to-valley
ratio is greater than 1. The shown device has a peak-to-valley
ratio of about -50 microAmps/-0.4 microAmps, or in other words,
about 130. The shown device is an exemplary device, and various
other devices displaying differential negative resistance have been
formed utilizing methodology of the present invention. Such devices
have been found to have peak-to-valley ratios greater than 8, and
specifically to have peak-to-valley ratios of at least 9, at least
about 10, at least about 20, at least about 30, at least about 40,
at least about 50, at least about 75, at least about 100, and
greater than at least about 100 as demonstrated by FIG. 9. It is
found that the peak-to-valley ratios of devices of the present
invention typically do not vary significantly with temperature, and
specifically that the ratios stay relatively constant across a
temperature range of from about -30.degree. C. to about 100.degree.
C.
[0051] The device of FIG. 9 has both the peak in current value
(200) and the valley in current value (202) occurring within a
voltage range of from less than 0 volts to greater than -1 volt, or
in other words, occurring within a voltage range having an absolute
value of from greater than 0 volt to less than 1 volt.
[0052] The assemblies of the present invention can have numerous
applications, including, for example, applications in logic
devices, and applications in microwave oscillator devices.
[0053] In compliance with the statute, the invention has been
described in language more or less specific as to structural and
methodical features. It is to be understood, however, that the
invention is not limited to the specific features shown and
described, since the means herein disclosed comprise preferred
forms of putting the invention into effect. The invention is,
therefore, claimed in any of its forms or modifications within the
proper scope of the appended claims appropriately interpreted in
accordance with the doctrine of equivalents.
* * * * *