U.S. patent application number 11/178464 was filed with the patent office on 2005-11-03 for liquid crystal display device and method of fabricating the same.
This patent application is currently assigned to NEC LCD TECHNOLOGIES, LTD.. Invention is credited to Ikeno, Hidenori, Kikkawa, Hironori, Matsuno, Fumihiko, Sakamoto, Michiaki, Yamaguchi, Yuichi.
Application Number | 20050243250 11/178464 |
Document ID | / |
Family ID | 18889403 |
Filed Date | 2005-11-03 |
United States Patent
Application |
20050243250 |
Kind Code |
A1 |
Kikkawa, Hironori ; et
al. |
November 3, 2005 |
Liquid crystal display device and method of fabricating the
same
Abstract
A liquid crystal display device including a first substrate, a
second substrate facing and spaced away from the first substrate, a
liquid crystal layer sandwiched between the first and second
substrates, a switching device formed on the first substrate, a
first electrically insulating film randomly patterned on the first
substrate, a second electrically insulating film covering the first
electrically insulating film therewith, and having a wavy surface,
and a reflection electrode formed on the second electrically
insulating film, and electrically connected to an electrode of the
switching device, wherein a light passing through the second
substrate and the liquid crystal layer is reflected at the
reflection electrode, and the second electrically insulating film
extends outwardly from the first electrically insulating film by a
certain length at an end of a display region in which images are to
be displayed, such that a step formed by the first and second
electrically insulating films in the vicinity of the end of the
display region is smoothed.
Inventors: |
Kikkawa, Hironori; (Tokyo,
JP) ; Sakamoto, Michiaki; (Tokyo, JP) ;
Yamaguchi, Yuichi; (Tokyo, JP) ; Ikeno, Hidenori;
(Tokyo, JP) ; Matsuno, Fumihiko; (Tokyo,
JP) |
Correspondence
Address: |
YOUNG & THOMPSON
745 SOUTH 23RD STREET
2ND FLOOR
ARLINGTON
VA
22202
US
|
Assignee: |
NEC LCD TECHNOLOGIES, LTD.
KANAGAWA
JP
|
Family ID: |
18889403 |
Appl. No.: |
11/178464 |
Filed: |
July 12, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11178464 |
Jul 12, 2005 |
|
|
|
10059183 |
Jan 31, 2002 |
|
|
|
6937302 |
|
|
|
|
Current U.S.
Class: |
349/113 |
Current CPC
Class: |
G02F 1/136236 20210101;
G02F 1/136227 20130101; G02F 1/1368 20130101; G02F 1/133553
20130101; G02F 1/133345 20130101 |
Class at
Publication: |
349/113 |
International
Class: |
G02F 001/1335 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 31, 2001 |
JP |
2001-024237 |
Claims
What is claimed is:
1. A liquid crystal display device comprising: (a) a first
substrate; (b) a second substrate facing and spaced away from said
first substrate; (c) a liquid crystal layer sandwiched between said
first and second substrates; (d) a switching device formed on said
first substrate; (e) a first electrically insulating film randomly
patterned on said first substrate; (f) a second electrically
insulating film covering said first electrically insulating film
therewith, and having a wavy surface; and (g) a reflection
electrode formed on said second electrically insulating film, and
electrically connected to an electrode of said switching device,
wherein a light passing through said second substrate and said
liquid crystal layer is reflected at said reflection electrode,
said second electrically insulating film extends inwardly from said
first electrically insulating film by a certain length at a contact
region where said reflection electrode is electrically connected to
said electrode of said switching device, such that a step formed by
said first and second electrically insulating films in the vicinity
of said contact region is smoothed.
2. The liquid crystal display device as set forth in claim 1,
wherein said certain length is in the range of about 10 .mu.m to
about 12 .mu.m both inclusive.
3. The liquid crystal display device as set forth in claim 1,
wherein said second electrically insulating film has a thickness in
the range of about 0.3 .mu.m to about 1.5 .mu.m both inclusive.
4. The liquid crystal display device as set forth in claim 1,
wherein said first electrically insulating film has a thickness in
the range of about 1 .mu.m to about 3 .mu.m both inclusive.
5. The liquid crystal display device as set forth in claim 1,
wherein said second electrically insulating film is composed of
thermo-flexible organic or inorganic material.
6. The liquid crystal display device as set forth in claim 1,
wherein said first and second electrically insulating films are
composed of different materials from each other.
7. The liquid crystal display device as set forth in claim 1,
wherein said first and second electrically insulating films are
composed of the same material having different viscosities from
each other.
8. The liquid crystal display device as set forth in claim 1,
wherein said first and second electrically insulating films are
composed of a combination of organic and inorganic materials.
9. A liquid crystal display device comprising: (a) a first
substrate; (b) a second substrate facing and spaced away from said
first substrate; (c) a liquid crystal layer sandwiched between said
first and second substrates; (d) a switching device formed on said
first substrate; (e) an electrically insulating film formed on said
first substrate, and defined by a thick region and a thin region,
said electrically insulating film having a wavy surface; and (f) a
reflection electrode formed on said electrically insulating film,
and electrically connected to an electrode of said switching
device, wherein a light passing through said second substrate and
said liquid crystal layer is reflected at said reflection
electrode, said thin region extends outwardly from said thick
region by a certain length at an end of a display region in which
images are to be displayed, such that a step formed by said
electrically insulating film in the vicinity of said end of said
display region is smoothed.
10. The liquid crystal display device as set forth in claim 9,
wherein said certain length is in the range of about 10 .mu.m to
about 12 .mu.m both inclusive.
11. The liquid crystal display device as set forth in claim 9,
wherein said thin region has a thickness in the range of about 0.3
.mu.m to about 1.5 .mu.m both inclusive.
12. The liquid crystal display device as set forth in claim 9,
wherein said thick region has a thickness in the range of about 1
.mu.m to about 3 .mu.m both inclusive.
13. The liquid crystal display device as set forth in claim 9,
wherein said electrically insulating film is composed of
thermo-flexible organic or inorganic material.
14. A liquid crystal display device comprising: (a) a first
substrate; (b) a second substrate facing and spaced away from said
first substrate; (c) a liquid crystal layer sandwiched between said
first and second substrates; (d) a switching device formed on said
first substrate; (e) an electrically insulating film formed on said
first substrate, and defined by a thick region and a thin region,
said electrically insulating film having a wavy surface; and (f) a
reflection electrode formed on said electrically insulating film,
and electrically connected to an electrode of said switching
device, wherein a light passing through said second substrate and
said liquid crystal layer is reflected at said reflection
electrode, said thin region extends inwardly from said thick region
by a certain length at a contact region where said reflection
electrode is electrically connected to said electrode of said
switching device, such that a step formed by said electrically
insulating film in the vicinity of said contact region is
smoothed.
15. The liquid crystal display device as set forth in claim 14,
wherein said certain length is in the range of about 10 .mu.m to
about 12 .mu.m both inclusive.
16. The liquid crystal display device as set forth in claim 14,
wherein said thin region has a thickness in the range of about 0.3
.mu.m to about 1.5 .mu.m both inclusive.
17. The liquid crystal display device as set forth in claim 22,
wherein said thick region has a thickness in the range of about 1
.mu.m to about 3 .mu.m both inclusive.
18. The liquid crystal display device as set forth in claim 22,
wherein said electrically insulating film is composed of
thermo-flexible organic or inorganic material.
Description
[0001] This application is a division of co-pending application
Ser. No. 10/059,183 filed on Jan. 31, 2002, the entire contents of
which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a liquid crystal display device and
a method of fabricating the same.
[0004] 2. Description of the Related Art
[0005] A reflection type liquid crystal display device reflects an
incident light at a reflection electrode formed therein towards a
viewer. Accordingly, a reflection type liquid crystal display
device is not necessary to include a light source such as a back
light device, and thus, consumes less power and can be fabricated
thinner and lighter than a light-transmission type liquid crystal
display device. A reflection type liquid crystal display device is
used mainly in a handy communication terminal.
[0006] Hereinbelow is explained a conventional reflection type
liquid crystal display device with reference to FIG. 1 which is a
plan view of a conventional reflection type liquid crystal display
device, FIG. 2 which is a cross-sectional view taken along the line
II-II in FIG. 1, and FIGS. 3A to 3H which are cross-sectional views
each illustrating a step of a method of fabricating a substrate on
which a thin film transistor (TFT) is to be fabricated. FIG. 1
illustrates pixels located at an outer periphery of a display area
in which images are to be displayed. Electrode terminals and other
parts are formed in areas located at upper and left sides of the
illustrated pixels, outside the display area.
[0007] First, a structure of a conventional reflection type liquid
crystal display device is explained hereinbelow with reference to
FIGS. 1 and 2.
[0008] The illustrated conventional reflection type liquid crystal
display device is comprised of a TFT substrate 5 on which a thin
film transistor (TFT) is formed, an opposing substrate 6 facing and
spaced away from the TFT substrate 5, and a liquid crystal display
layer 4 sandwiched between the TFT substrate 5 and the opposing
substrate 6.
[0009] The TFT substrate 5 is comprised of gate lines 1, drain
lines 2 extending perpendicularly to the gate lines 1, switching
devices each comprised of a thin film transistor 3 formed in each
of pixel areas defined by the gate lines 1 and the drain lines 2, a
reflection electrode 18 which reflects a light entering the pixel
areas and applies a voltage to liquid crystal molecules in the
liquid crystal layer 4, a first electrically insulating film 16
formed on the TFT substrate 5, and a second electrically insulating
film 17 which cooperates with the first electrically insulating
film 16 to present a wavy surface to the reflection electrode
18.
[0010] The thin film transistor 3 has a gate electrode 11
electrically connected to the gate line 1, a drain electrode 14
electrically connected to the drain line 2, and a source electrode
15 electrically connected to the reflection electrode 18.
[0011] As illustrated in FIG. 2, the TFT substrate 5 is comprised
further of a first substrate 10 on which the gate electrode 11 is
formed, a gate insulating film 12 formed entirely on the first
substrate 10, an amorphous silicon layer 13a formed on the gate
insulating film 12, and n+ amorphous silicon layers 13b formed on
the amorphous silicon layer 13a.
[0012] The drain electrode 14 and the source electrode 15 extend
covering both the n+ amorphous silicon layers 13b and the gate
insulating film 12 therewith.
[0013] The first electrically insulating film 16 is randomly formed
in each of pixels in the display area, and is covered with the
second electrically insulating film 17 to smooth steps formed by
the first electrically insulating film 16. The reflection electrode
18 has a wave surface showing a certain optical reflection
characteristic, reflecting a wavy surface of the second
electrically insulating film 17.
[0014] As illustrated in FIG. 2, the reflection electrode 18 is
electrically connected to the source electrode 15 at a contact hole
19.
[0015] The opposing substrate 6 is comprised of a second substrate
20, a color filter 21 formed on a first surface of the second
substrate 20, a common electrode 22 through which a voltage is
applied to liquid crystal molecules in the liquid crystal layer 4,
and a polarizing plate 23 formed on a second surface of the second
substrate 20.
[0016] Liquid crystal molecules in the liquid crystal layer 4 are
controlled by a voltage applied across the TFT substrate 5 and the
opposing substrate 6.
[0017] An incident light 24 passing through the opposing substrate
6 and the liquid crystal layer 4 is reflected at the reflection
electrode 18 having the wavy surface, and then, passes again
through the liquid crystal layer 4 and the opposing substrate 6,
and leaves the liquid crystal display device as an out-going light
25.
[0018] In the conventional liquid crystal display device, steep
steps formed by the first electrically insulating film 16 randomly
formed on the TFT substrate 5 are smoothed by the second
electrically insulating film 17 thinner than the first electrically
insulating film 16, as mentioned earlier. As a result, the
reflection electrode 18 has a sufficiently wavy surface at which
the incident light 24 is randomly reflected, ensuring that images
can be displayed on a screen with uniform brightness.
[0019] Hereinbelow is explained a method of fabricating the TFT
substrate 5 in the above-mentioned conventional liquid crystal
display device with reference to FIGS. 3A to 3H. The thin film
transistor 3 acting as a switching device has a reverse-stagger
structure.
[0020] First, as illustrated in FIG. 3A, the gate electrode 11 and
the gate line 1 are formed on the first substrate 10. Then, the
gate insulating film 12 is formed on the first substrate 10,
covering the gate electrode 11 therewith. Then, the amorphous
silicon layer 13a is formed on the gate insulating film 12 above
the gate electrode 11, and subsequently, the n+ amorphous silicon
layer 13b is formed on the amorphous silicon layer 13a.
[0021] Then, the drain electrode 14 and the source electrode 15 are
formed partially covering the n+ amorphous silicon layer 13b
therewith and further partially covering the gate insulating film
12 therewith.
[0022] Then, the n+ amorphous silicon layers 13b is etched in its
exposed area with the drain and source electrodes 14 and 15 being
used as a mask, to thereby fabricate the thin film transistor 3.
Then, the thin film transistor 3 is covered with a passivation film
(not illustrated).
[0023] Then, as illustrated in FIG. 3B, the first electrically
insulating films 16 composed of a resin are randomly formed in each
of pixel regions. The electrically insulating films 16 are formed
to have a thickness equal to or greater than a predetermined
thickness in order to provide appropriate optical reflection
characteristic to the reflection electrode 18.
[0024] Then, as illustrated in FIG. 3C, the first electrically
insulating films 16 are heated to turn their sharp corners into
rounded corners.
[0025] Then, as illustrated in FIG. 3D, the first electrically
insulating films 16 are covered with the second electrically
insulating film 17. Since the second electrically insulating film
17 is formed in order to smooth steps formed by the first
electrically insulating films 16, if it is too thin, the steps
formed by the first electrically insulating films 16 remain as they
are, and if it is too thick, the second electrically insulating
film 17 would have a planar surface. Hence, a thickness of the
second electrically insulating film 17 is determined taking the
optical reflection characteristic of the reflection electrode 18
into consideration.
[0026] Then, the second electrically insulating film 17 is removed
in an area outside the display area, and concurrently removed
partially above the source electrode 15 to form the contact hole 19
through which the reflection electrode 18 is electrically connected
to the source electrode 15.
[0027] Then, as illustrated in FIG. 3E, a metal 18b having high
reflectivity is deposited all over the first substrate 10.
[0028] Then, as illustrated in FIG. 3F, the metal 18b is entirely
covered with a resist 26.
[0029] Then, as illustrated in FIG. 3G, the resist 26 is exposed to
a light and subsequently developed such that a resist pattern 26a
covers only an area in which the reflection electrode 18 is to be
formed. Then, the metal 18b is etched for removal with the resist
pattern 26 being used as a mask.
[0030] Thus, as illustrated in FIG. 3H, the reflection electrode 18
composed of the metal 18b is formed covering the second
electrically insulating film 17 therewith. Then, the resist pattern
26a is removed.
[0031] The resultant reflection electrode 18 is electrically
connected to the source electrode 15 in each of pixels. The
reflection electrode 18 is removed at a boundary between pixel
areas, that is, on both the gate line 1 and the drain line 2, and
further in an area (an area located at the left in FIG. 3H) where
electrode terminals are to be formed which area is outside the
display area, in order that the reflection electrode 18 acts as a
pixel electrode to apply a voltage to liquid crystal molecules in
the liquid crystal layer 4.
[0032] However, the above-mentioned conventional liquid crystal
display device and the above-mentioned method of fabricating the
same are accompanied with the following problems.
[0033] In the step having been explained with reference to FIG. 3D,
the second electrically insulating film 17 formed for smoothing the
steps formed by the first electrically insulating films 16 is
formed also on both the gate line 1 and the drain line 2 between
adjacent pixels, in order to make it easy to remove the reflection
electrode 18. In the area (which is located at the left in FIG. 3H)
where electrode terminals are to be formed, located outside the
display area, the second electrically insulating film 17 is removed
at the same location as the first electrically insulating film 16,
in order to render the area as small as possible and thereby
fabricate a liquid crystal display device in a small size. As a
result, as illustrated in FIG. 3H, the first and second
electrically insulating films 16 and 17 have a steep cross-section
at an end thereof.
[0034] Herein, it is assumed that the resist 26 is deposited
entirely over the first substrate 10 with the first and second
electrically insulating film 16 and 17 having a steep
cross-section. The resist 26 would have a designed thickness in an
area where the second electrically insulating film 17 covers the
first electrically insulating film 16 therewith to thereby have a
smooth upper surface, that is, in pixels or on the gate line 1 and
the drain line 2 between adjacent pixels. In contrast, in the area
where electrode terminals are to be formed, located outside the
display area, the resist 26 would gather due to the steep
cross-section, and resultingly, would have a thickness greater than
a designed thickness.
[0035] Since the conditions for carrying out exposure of the resist
26 to a light and development of the resist 26 are determined based
on a resist existing between pixels which resist is required to be
exactly patterned, the resist 26 could not be completely removed at
an end of the first and second electrically insulating films 16 and
17 having a great thickness, resulting in resist residue 26b, as
illustrated in FIG. 3G.
[0036] The resist residue 26b would prevent the metal 18b existing
therebelow from being etched, resulting in an non-removed portion
18a of the metal 18b, as illustrated in FIG. 3H.
[0037] If the portion 18a of the metal 18b remains not removed in
an area where the metal 18b has to be all removed, as mentioned
above and as illustrated in FIG. 3H, there would be unintentionally
generated a parasitic capacity between the non-removed portion 18a
and the gate and drain lines 1 and 2, resulting in remarkable
degradation in display quality in the liquid crystal display
device.
[0038] As an alternative, if the non-removed portion 18a of the
metal 18b bridges over adjacent pixels, there would be caused a
problem that the resultant reflection electrode 18 falls into
short-circuit.
SUMMARY OF THE INVENTION
[0039] In view of the above-mentioned problems in the conventional
liquid crystal display device and the method of fabricating the
same, it is an object of the present invention to provide a liquid
crystal display device and a method of fabricating the same both of
which are capable of preventing unintentional generation of a
parasitic capacity caused by a non-removed portion of a reflection
electrode and further preventing a reflection electrode from
falling into short-circuit between adjacent pixels.
[0040] In one aspect of the present invention, there is provided a
liquid crystal display device including (a) a first substrate, (b)
a second substrate facing and spaced away from the first substrate,
(c) a liquid crystal layer sandwiched between the first and second
substrates, (d) a switching device formed on the first substrate,
(e) a first electrically insulating film randomly patterned on the
first substrate, (f) a second electrically insulating film covering
the first electrically insulating film therewith, and having a wavy
surface, and (g) a reflection electrode formed on the second
electrically insulating film, and electrically connected to an
electrode of the switching device, wherein a light passing through
the second substrate and the liquid crystal layer is reflected at
the reflection electrode, the second electrically insulating film
extends outwardly from the first electrically insulating film by a
certain length at an end of a display region in which images are to
be displayed, such that a step formed by the first and second
electrically insulating films in the vicinity of the end of the
display region is smoothed.
[0041] It is preferable that the certain length is in the range of
about 10 .mu.m to about 12 .mu.m both inclusive.
[0042] It is preferable that the second electrically insulating
film has a thickness in the range of about 0.3 .mu.m to about 1.5
.mu.m both inclusive.
[0043] It is preferable that the first electrically insulating film
has a thickness in the range of about 1 .mu.m to about 3 .mu.m both
inclusive.
[0044] For instance, the second electrically insulating film may be
composed of thermo-flexible organic or inorganic material.
[0045] For instance, the first and second electrically insulating
films may be composed of different materials from each other.
[0046] For instance, the first and second electrically insulating
films may be composed of the same material having different
viscosities from each other.
[0047] For instance, the first and second electrically insulating
films may be composed of a combination of organic and inorganic
materials.
[0048] There is further provided a liquid crystal display device
including (a) a first substrate, (b) a second substrate facing and
spaced away from the first substrate, (c) a liquid crystal layer
sandwiched between the first and second substrates, (d) a switching
device formed on the first substrate, (e) a first electrically
insulating film randomly patterned on the first substrate, (d) a
second electrically insulating film covering the first electrically
insulating film therewith, and having a wavy surface, and (g) a
reflection electrode formed on the second electrically insulating
film, and electrically connected to an electrode of the switching
device, wherein a light passing through the second substrate and
the liquid crystal layer is reflected at the reflection electrode,
the second electrically insulating film extends inwardly from the
first electrically insulating film by a certain length at a contact
region where the reflection electrode is electrically connected to
the electrode of the switching device, such that a step formed by
the first and second electrically insulating films in the vicinity
of the contact region is smoothed.
[0049] There is still further provided a liquid crystal display
device including (a) a first substrate, (b) a second substrate
facing and spaced away from the first substrate, (c) a liquid
crystal layer sandwiched between the first and second substrates,
(d) a switching device formed on the first substrate, (e) an
electrically insulating film formed on the first substrate, and
defined by a thick region and a thin region, the electrically
insulating film having a wavy surface, and (e) a reflection
electrode formed on the electrically insulating film, and
electrically connected to an electrode of the switching device,
wherein a light passing through the second substrate and the liquid
crystal layer is reflected at the reflection electrode, the thin
region extends outwardly from the thick region by a certain length
at an end of a display region in which images are to be displayed,
such that a step formed by the electrically insulating film in the
vicinity of the end of the display region is smoothed.
[0050] There is yet further provided a liquid crystal display
device including (a) a first substrate, (b) a second substrate
facing and spaced away from the first substrate, (c) a liquid
crystal layer sandwiched between the first and second substrates,
(d) a switching device formed on the first substrate, (e) an
electrically insulating film formed on the first substrate, and
defined by a thick region and a thin region, the electrically
insulating film having a wavy surface, and (f) a reflection
electrode formed on the electrically insulating film, and
electrically connected to an electrode of the switching device,
wherein a light passing through the second substrate and the liquid
crystal layer is reflected at the reflection electrode, the thin
region extends inwardly from the thick region by a certain length
at a contact region where the reflection electrode is electrically
connected to the electrode of the switching device, such that a
step formed by the electrically insulating film in the vicinity of
the contact region is smoothed.
[0051] In another aspect of the present invention, there is
provided a method of fabricating a liquid crystal display device,
including the steps at least of (a) randomly patterning a first
electrically insulating film on a first substrate on which a
switching device is fabricated, (b) covering the first electrically
insulating film with a second electrically insulating film, and (c)
forming a reflection electrode on a wavy surface of the first and
second electrically insulating films such that the reflection
electrode is electrically connected to an electrode of the
switching device, the reflection electrode reflecting a light
passing through both a second substrate facing and spaced away from
the first substrate and a liquid crystal layer sandwiched between
the first and second substrates, the step (b) including (b1)
forming the second electrically insulating film over the first
substrate such that the first electrically insulating film is
entirely covered with the second electrically insulating film, and
(b2) partially removing the second electrically insulating film
such that the second electrically insulating film extends outwardly
from the first electrically insulating film by a certain length at
an end of a display region in which images are to be displayed,
thereby a step formed by the first and second electrically
insulating films in the vicinity of the end of the display region
is smoothed.
[0052] It is preferable that the step (c) includes the steps of
(c1) depositing a material of which the reflection electrode is
composed, entirely over the second electrically insulating film,
(c2) coating a resist over the material, (c3) removing the resist
in an area in which the material is to be removed, and (c4) etching
the material with the resist being used as a mask.
[0053] There is further provided a method of fabricating a liquid
crystal display device, including the steps at least of (a)
randomly patterning a first electrically insulating film on a first
substrate on which a switching device is fabricated, (b) covering
the first electrically insulating film with a second electrically
insulating film, and (c) forming a reflection electrode on a wavy
surface of the first and second electrically insulating films such
that the reflection electrode is electrically connected to an
electrode of the switching device, the reflection electrode
reflecting a light passing through both a second substrate facing
and spaced away from the first substrate and a liquid crystal layer
sandwiched between the first and second substrates, the step (b)
including (b1) forming the second electrically insulating film over
the first substrate such that the first electrically insulating
film is entirely covered with the second electrically insulating
film, and (b2) partially removing the second electrically
insulating film such that the second electrically insulating film
extends inwardly from the first electrically insulating film by a
certain length at a contact region where the reflection electrode
is electrically connected to the electrode of the switching device,
thereby a step formed by the first and second electrically
insulating films in the vicinity of the contact region is
smoothed.
[0054] It is preferable that the step (c) includes the steps of
(c1) depositing a material of which the reflection electrode is
composed, entirely over the second electrically insulating film,
(c2) coating a resist over the material, (c3) removing the resist
in an area in which the material is to be removed, and (c4) etching
the material with the resist being used as a mask.
[0055] There is still further provided a method of fabricating a
liquid crystal display device, including the steps at least of (a)
randomly patterning an electrically insulating film on a first
substrate on which a switching device is fabricated, the
electrically insulating film having a wavy surface, and (b) forming
a reflection electrode on the wavy surface of the electrically
insulating film such that the reflection electrode is electrically
connected to an electrode of the switching device, the reflection
electrode reflecting a light passing through both a second
substrate facing and spaced away from the first substrate and a
liquid crystal layer sandwiched between the first and second
substrates, the step (b) including (b1) forming the electrically
insulating film over the first substrate, and (b2) patterning the
electrically insulating film into a removal region in which the
electrically insulating film is completely removed, a thin region
in which the electrically insulating film remains as a thin film,
and a thick region in which the electrically insulating film
remains as a thick film such that the thin region extends outwardly
from the thick region by a certain length at an end of a display
region in which images are to be displayed, thereby a step formed
by the electrically insulating film in the vicinity of the end of
the display region is smoothed.
[0056] It is preferable that the electrically insulating film is
patterned in the step (b2) in single exposure to a light through
the use of a half-tone mask having a light-permeable portion for
defining the removal region, a half-light-permeable portion for
defining the thin region, and a light-impermeable portion for
defining the thick region.
[0057] It is preferable that the half-light-permeable portion is
located adjacent to the light-permeable portion.
[0058] It is preferable that the electrically insulating film is
patterned in the step (b2) in single exposure to a light through
the use of a photo mask having a light-permeable portion for
defining the removal region, and a half-light-permeable portion for
defining the thin region.
[0059] It is preferable that the electrically insulating film is
patterned in the step (b2) in single exposure to a light through
the use of a photo mask having such a fine pattern that a light to
be directed to the thin region is attenuated.
[0060] There is yet further provided a method of fabricating a
liquid crystal display device, including the steps at least of (a)
randomly patterning an electrically insulating film on a first
substrate on which a switching device is fabricated, the
electrically insulating film having a wavy surface, and (b) forming
a reflection electrode on the wavy surface of the electrically
insulating film such that the reflection electrode is electrically
connected to an electrode of the switching device, the reflection
electrode reflecting a light passing through both a second
substrate facing and spaced away from the first substrate and a
liquid crystal layer sandwiched between the first and second
substrates, the step (b) including (b1) forming the electrically
insulating film over the first substrate, and (b2) patterning the
electrically insulating film into a removal region in which the
electrically insulating film is completely removed, a thin region
in which the electrically insulating film remains as a thin film,
and a thick region in which the electrically insulating film
remains as a thick film such that the thin region extends inwardly
from the thick region by a certain length at a contact region where
the reflection electrode is electrically connected to the electrode
of the switching device, thereby a step formed by the electrically
insulating film in the vicinity of the contact region is
smoothed.
[0061] The advantages obtained by the aforementioned present
invention will be described hereinbelow.
[0062] In accordance with the present invention, the second
electrically insulating film is designed to extend outwardly from
the first electrically insulating film by a certain length at an
end of a display region, and is further designed to have a
thickness in a predetermined range. As an alternative, the second
electrically insulating film is designed to extend inwardly from
the first electrically insulating film by a certain length at a
contact region. As a result, it would be possible to smooth a step
formed by the first and second electrically insulating films in the
vicinity of an end of the display region. This ensures that it
would be possible to prevent a resist used for patterning the
reflection electrode from gathering as a resist residue at an end
of the first and second electrically insulating films. Thus,
generation of an non-removed portion of a reflection electrode
caused by the resist residue would be prevented, ensuring that it
would be possible to avoid an unintentional parasitic capacity and
prevent adjacent pixels from short-circuiting with each other. As a
result, the present invention provides a liquid crystal display
device having no non-uniformity in display and presenting high
quality images.
[0063] Furthermore, the use of a half-tone mask or photo mask in
the method of fabricating a liquid crystal display device would
make it possible to form the first and second electrically
insulating films of a common material in a single step, ensuring
reduction in the number of fabrication steps.
[0064] The above and other objects and advantageous features of the
present invention will be made apparent from the following
description made with reference to the accompanying drawings, in
which like reference characters designate the same or similar parts
throughout the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0065] FIG. 1 is a plan view of a conventional reflection type
liquid crystal display device.
[0066] FIG. 2 is a cross-sectional view taken along the line II-II
in FIG. 1.
[0067] FIGS. 3A to 3H are cross-sectional views each illustrating a
step of a method of fabricating a substrate on which a thin film
transistor (TFT) is to be fabricated, in the conventional
reflection type liquid crystal display device illustrated in FIG.
1.
[0068] FIG. 4 is a plan view of the reflection type liquid crystal
display device in accordance with the first embodiment of the
present invention.
[0069] FIG. 5 is a cross-sectional view taken along the line V-V in
FIG. 4.
[0070] FIGS. 6A to 6H are cross-sectional views each illustrating a
step of a method of fabricating a substrate on which a thin film
transistor (TFT) is to be fabricated, in the reflection type liquid
crystal display device illustrated in FIG. 4.
[0071] FIG. 7 is a graph showing a relation between a thickness of
a resist and light exposure in the reflection type liquid crystal
display device in accordance with the first embodiment.
[0072] FIG. 8 is a graph showing a relation between a thickness of
an electrically insulating film at a periphery of the display area
and a thickness of a resist in the reflection type liquid crystal
display device in accordance with the first embodiment.
[0073] FIG. 9 is a graph showing a relation among a viscosity of a
resin, a number of revolution in spin-coating a resin and a
thickness in the reflection type liquid crystal display device in
accordance with the first embodiment.
[0074] FIGS. 10A to 10H are cross-sectional views each illustrating
a step of a method of fabricating a substrate on which a thin film
transistor (TFT) is to be fabricated, in the reflection type liquid
crystal display device in accordance with the second embodiment of
the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0075] Preferred embodiments in accordance with the present
invention will be explained hereinbelow with reference to
drawings.
First Embodiment
[0076] FIG. 4 is a plan view of a reflection type liquid crystal
display device in accordance with the first embodiment, and FIG. 5
is a cross-sectional view taken along the line V-V in FIG. 4.
[0077] With reference to FIGS. 4 and 5, the reflection type liquid
crystal display device is comprised of a TFT substrate 5 on which a
thin film transistor (TFT) is formed, an opposing substrate 6
facing and spaced away from the TFT substrate 5, and a liquid
crystal display layer 4 sandwiched between the TFT substrate 5 and
the opposing substrate 6.
[0078] The TFT substrate 5 is comprised of gate lines 1, drain
lines 2 extending perpendicularly to the gate lines 1, switching
devices each comprised of a thin film transistor 3 formed in each
of pixel areas defined by the gate lines 1 and the drain lines 2, a
reflection electrode 18 which reflects a light entering the pixel
areas and applies a voltage to liquid crystal molecules in the
liquid crystal layer 4, a first electrically insulating film 16
formed on the TFT substrate 5, and a second electrically insulating
film 17 which cooperates with the first electrically insulating
film 16 to present a wavy surface to the reflection electrode
18.
[0079] The thin film transistor 3 has a gate electrode 11
electrically connected to the gate line 1, a drain electrode 14
electrically connected to the drain line 2, and a source electrode
15 electrically connected to the reflection electrode 18.
[0080] As illustrated in FIG. 5, the TFT substrate 5 is comprised
further of a first substrate 10 on which the gate electrode 11 is
formed, a gate insulating film 12 formed entirely on the first
substrate 10, an amorphous silicon layer 13a formed on the gate
insulating film 12, and n+ amorphous silicon layers 13b formed on
the amorphous silicon layer 13a.
[0081] The drain electrode 14 and the source electrode 15 extend
covering both the n+ amorphous silicon layers 13b and the gate
insulating film 12 therewith.
[0082] The first electrically insulating film 16 is randomly formed
in each of pixels in the display area, and is covered with the
second electrically insulating film 17 to smooth steps formed by
the first electrically insulating film 16.
[0083] The first electrically insulating film 16 is randomly formed
in the display area in order to have uniform optical reflection
characteristic all over the display area, whereas the first
electrically film 16 is not formed in a terminal area located
outside the display area, because electrode terminals and other
parts have to be formed in the terminal area. In FIG. 4, the
terminal area extends at the upper and left sides of the
illustrated pixels.
[0084] The second electrically insulating film 17 is continuously
formed in the display area without a contact hole 19, and slightly
extends to the terminal area such that an end of the first
electrically insulating film 16 does not overlap an end of the
second electrically insulating film 17. This ensures that the
display area has a smooth step at an end thereof.
[0085] As illustrated in FIG. 5, the reflection electrode 18 is
electrically connected to the source electrode 15 at the contact
hole 19 formed through the second electrically insulating film 17
above the source electrode 15.
[0086] The reflection electrode 18 is necessary to be separated
into pieces for each of pixels, because the reflection electrode 18
acts also as a pixel electrode for applying a voltage to liquid
crystal molecules in the liquid crystal layer 4. Hence, as
illustrated in FIG. 4, the reflection electrode 18 is separated
along the gate lines 1 and the drain lines 2 for each of
pixels.
[0087] The opposing substrate 6 is comprised of a second substrate
20, a color filter 21 formed on a first surface of the second
substrate 20, a common electrode 22 through which a voltage is
applied to liquid crystal molecules in the liquid crystal layer 4,
and a polarizing plate 23 formed on a second surface of the second
substrate 20.
[0088] Liquid crystal molecules in the liquid crystal layer 4 are
controlled by a voltage applied across the TFT substrate 5 and the
opposing substrate 6.
[0089] An incident light 24 passing through the opposing substrate
6 and the liquid crystal layer 4 is reflected at the reflection
electrode 18 having the wavy surface, and then, passes again
through the liquid crystal layer 4 and the opposing substrate 6,
and leaves the liquid crystal display device as an out-going light
25.
[0090] The reflection electrode 18 has a wave surface reflecting a
wavy surface of the second electrically insulating film 17, and has
an optical reflection characteristic defined by angles of raised
and recessed portions of the wave surface of the reflection
electrode 18. Hence, the angles of the raised and recessed portions
of the wave surface of the reflection electrode 18 are determined
so as to provide a desired optical reflection characteristic to the
reflection electrode 18. For instance, the raised and recessed
portions may be defined by two or more of a pitch between raised
portion, a pitch between recessed portions, a height of a raised
portion, and a depth of a recessed portion.
[0091] A lower limit of a thickness of the first electrically
insulating film 16 is defined by the above-mentioned optical
reflection characteristic, and further by a parasitic capacity. If
the first electrically insulating film 16 is formed too thin, it
would not be possible to significantly change a direction of
reflection of the incident light 24, and a space between the
reflection electrode 18 and the gate and drain lines 1 and 2 would
be narrowed, resulting in an increase in a parasitic capacity
between the reflection electrode 18 and the gate and drain lines 1
and 2, and signal delay. As a result, a signal cannot be properly
transmitted, and an electric field between a signal line and a
pixel would be intensified, causing disturbance in alignment of
liquid crystal molecules, delay in a response, and degradation in
quality of displayed images.
[0092] From the above-mentioned standpoints, the first electrically
insulating film 16 is preferably designed to have a thickness in
the range of about 1 .mu.m to about 3 .mu.m.
[0093] Since the second electrically insulating film 17 is formed
for moderately relaxing the raised and recessed portions of the
first electrically insulating film 16 to smooth the wavy surface of
the first electrically insulating film 16, if the second
electrically insulating film 17 is too thin, the second
electrically insulating film 17 could not smooth the wavy surface
of the first electrically insulating film 16, whereas if the second
electrically insulating film 17 is too thick, the second
electrically insulating film 17 would cancel projections and
recesses of the first electrically insulating film 16, and would be
flattened.
[0094] In the first embodiment, the second electrically insulating
film 17 is designed to have such a thickness that resist residue
does not remain non-removed in an area outside the display area. In
accordance with the results of the experiments having been
conducted by the inventors, it has been found out that it is
preferable for the second electrically insulating film 17 to have a
thickness in the range of about 0.3 .mu.m to about 1.5 .mu.m, and a
distance between an end of the first electrically insulating film
16 to an end of the second electrically insulating film 17 is
preferably in the range of about 10 .mu.m to about 12 .mu.m.
[0095] Hereinbelow is explained the reason of selecting the
above-mentioned figures, with reference to FIGS. 7 to 9.
[0096] FIG. 7 shows a relation between a thickness of a resist and
light exposure necessary for removing the resist, FIG. 8
illustrates a positional relation between thicknesses of the first
electrically insulating film 16, the second electrically insulating
film 17 and the resist 26, and locations of ends of those, and FIG.
9 shows a relation among a viscosity of a resin, a thickness of a
resin and a number of revolution for spin-coating.
[0097] As illustrated in FIG. 7, greater light exposure is
necessary for removing a thicker resist. An accuracy with which a
resist having a certain thickness is patterned is controllable for
a certain range of light exposure. In other words, the accuracy can
be controlled in the certain range of light exposure, though a
pattern might be slightly thicker or thinner than designed. For
instance, when a resist having a thickness of 1 m is to be
patterned, optimal light exposure is about 140 mJ/cm.sup.2.
However, an accuracy with which the resist is patterned can be
controlled, if light exposure is in the range of about 80
mJ/cm.sup.2 to about 190 mJ/cm.sup.2.
[0098] Conversely speaking, a thickness of a resist which can be
patterned by certain light exposure has a certain range. If a light
is exposed to a resist by 190 mJ/cm.sup.2, a resist having a
thickness of 1 .mu.m can be accurately patterned, and further, a
resist having a thickness of 2 .mu.m can be accurately
patterned.
[0099] Applying the above-mentioned relation to the liquid crystal
display device, a thickness of the second electrically insulating
film 17 and a distance between ends of the first and second
electrically insulating films 16 and 17 are determined in the first
embodiment such that a variance in a thickness of a resist to be
formed on the reflection electrode 18 is within such a range that
an accuracy with which the resist is patterned is controllable.
[0100] As illustrated in FIG. 8, assuming that A indicates a
thickness of the first electrically insulating film 16, B indicates
a thickness of a planarized portion of the second electrically
insulating film 17, and D indicates a thickness of a raised portion
of the second electrically insulating film 17, a maximum variance
in a thickness of the resist 26 is defined by C or equal to B.
C=X+D+E-B-E
[0101] wherein X indicates a thickness of the first electrically
insulating film 16, and E indicates a thickness of the reflection
electrode 18.
[0102] Herein, if the resist 26 had a thickness of 2 .mu.m which is
usually selected for photolithography, as is obvious in view of
FIG. 7, light exposure by which a resist having a thickness of 2
.mu.m can be patterned is in the range of about 150 mJ/cm.sup.2 to
about 270 mJ/cm.sup.2, and a resist having a thickness of 3.5 .mu.m
at maximum can be patterned by light exposure of 270
mJ/cm.sup.2.
[0103] Accordingly, the thickness C or B has to be equal to or
smaller than 1.5 m (3.5 .mu.m-2 .mu.m=1.5 .mu.m). If the first
electrically insulating film 16 is designed to have a thickness in
the range of 1 .mu.m and 3 .mu.m taking its optical reflection
characteristic into consideration, an upper limit of a thickness of
the second electrically insulating film 17 is 1.5 .mu.m, and a
lower limit of a thickness of the same is preferably 0.3 .mu.m for
making a step defined by the thickness C small.
[0104] The thickness B of a planarized portion of the second
electrically insulating film 17 becomes smaller as a distance
between the ends of the first and second electrically insulating
films 16 and 17 becomes greater, and approaches a certain thickness
defined by a viscosity. On the other hand, if the distance is too
long, the terminal area located outside the display area would be
too wide, resulting in that it would be impossible to fabricate the
liquid crystal display device in a small size. Hence, the distance
is preferably equal to a distance by which the thickness B of a
planarized portion of the second electrically insulating film 17 is
fixed, that is, about 10 .mu.m, and more preferably equal to about
12 .mu.m taking misregistration in a unit for exposing a resist to
a light, into consideration.
[0105] In order to design the second electrically insulating film
17 to have a thickness in the above-mentioned range, a viscosity of
a resin and/or a number of revolution at which a resin is
spin-coated is(are) controlled. For instance, a thickness of the
second electrically insulating film 17 can be accurately controlled
by spin-coating a resin in accordance with the relation shown in
FIG. 9.
[0106] In order to reduce a height of the second electrically
insulating film 17 (indicated as "B" in FIG. 8) in the terminal
area located outside the display area, an angle formed between a
surface of the second electrically insulating film 17 and a surface
of the first substrate 10 might be determined to be in a certain
range by improving wettability of the second electrically
insulating film 17 with the first substrate 10 or a passivation
film such as a silicon nitride film. Specifically, even if the
second electrically insulating film 17 were thick, it would be
possible to avoid the problem of resist residue by applying surface
treatment such as HMDS to the second electrically insulating film
17 to thereby improved the wettability, and make a contact angle
small.
[0107] Thus, it would be possible to prevent resist residue from
remaining non-removed on the reflection electrode 18, by setting a
thickness of the second electrically insulating film 17 or a
distance between the ends of the first and second electrically
insulating films 16 and 17 to be in a predetermined range. In
addition, by relaxing a step formed by the first and second
electrically insulating films 16 and 17, an inclination angle
formed by inner surfaces of the contact hole 19 could be
controlled, ensuring that the reflection electrode 18 and the
source electrode 15 are kept in appropriate electrical contact with
each other.
[0108] Hereinbelow is explained a method of fabricating the
above-mentioned reflection type liquid crystal display device, with
reference to FIGS. 6A to 6H. In the method mentioned hereinbelow,
the thin film transistor 3 acting as a switching device has a
reverse-stagger structure.
[0109] First, a metal layer composed of chromium, for instance, is
formed on the first substrate 10 composed of glass, for instance,
by sputtering. Then, the metal layer is patterned into the gate
line 1 and the gate electrode 11 by photolithography and etching.
The metal layer of which the gate line 1 and the gate electrode 11
are composed may be composed of a metal which has a low resistance
and which can be readily patterned by photolithography, such as
molybdenum, titanium, aluminum, or aluminum alloy as well as
chromium. As an alternative, the metal layer may have a
multi-layered structure having an aluminum layer and a barrier
metal layer formed on the aluminum layer, wherein the barrier metal
layer may be composed of titanium.
[0110] Then, a silicon nitride film which will make the gate
insulating film 12 is formed all over the first substrate 10. Then,
a non-doped amorphous silicon film and a n+-doped amorphous silicon
film are successively formed on the gate insulating film 12 by
chemical vapor deposition (CVD). Thereafter, those amorphous
silicon layers are patterned into the amorphous silicon layer 13a
and the n+ amorphous silicon layer 13b. The amorphous silicon layer
13a acts as an active layer in the thin film transistor 3, and the
n+ amorphous silicon layer 13b ensures ohmic contact between the
drain electrode 14, the source electrode 15 and the amorphous
silicon layer 13a.
[0111] Then, a chromium film is formed over the amorphous silicon
layer 13a and the n+ amorphous silicon layer 13b by sputtering, and
subsequently, patterned into the drain electrode 14 and the source
electrode 15. Then, the n+ amorphous silicon layer 13b is
dry-etched in an area in alignment with a space formed between the
drain electrode 14 and the source electrode 15. This is for the
purpose of preventing a current from running directly through the
drain electrode 14 and the source electrode 15 via the n+ amorphous
silicon layer 13b.
[0112] Then, a silicon nitride film is formed over the first
substrate 10 by CVD, and subsequently, patterned into a passivation
film (not illustrated). The passivation film prevents impurities
such as ions from diffusing into the amorphous silicon layer 13a to
thereby cause malfunction in the thin film transistor 3.
[0113] By carrying out the above-mentioned steps, the thin film
transistor 3 is fabricated in the TFT substrate 5, as illustrated
in FIG. 6A.
[0114] Then, as illustrated in FIG. 6B, the first electrically
insulating film 16 is formed on the gate insulating film 12
randomly in the display area.
[0115] Then, as illustrated in FIG. 6C, a process for changing a
shape is applied to the first electrically insulating film 16 to
thereby round the first electrically insulating film 16 at
corners.
[0116] Then, as illustrated in FIG. 6D, the second electrically
insulating film 17 is formed entirely covering the first
electrically insulating film 16 therewith, and then, there is
formed the contact hole 19 throughout the second electrically
insulating film 17 above the source electrode 15 for electrically
connecting the reflection electrode 18 and the source electrode 15
to each other.
[0117] The first electrically insulating film 16 and the second
electrically insulating film 17 are formed entirely in the display
area, and the second electrically insulating film 17 is formed in
such a way that the second electrically insulating film 17 extends
outwardly beyond the end of the first electrically insulating film
16 in an area (that is, an area located at the left in FIG. 6D)
outside a pixel located at an outer periphery of the display area,
thereby avoiding a steep step to be formed by the first and second
electrically insulating films 16 and 17.
[0118] The first electrically insulating film 16 may be composed of
photo-insensitive resin or photosensitive resin.
[0119] If the first electrically insulating film 16 were composed
of photo-insensitive resin, the method of fabricating the liquid
crystal display device would include the steps of (a) forming the
first electrically insulating film 16 on the first substrate 19,
(b) forming a resist for patterning the first electrically
insulating film 16, (c) exposing the resist to a light, (d)
developing the resist, (e) etching the first electrically
insulating film 16, and (e) removing the resist.
[0120] If the first electrically insulating film 16 were composed
of photo-sensitive organic or inorganic material, the method of
fabricating the liquid crystal display device would include the
steps of (a) forming the first electrically insulating film 16 on
the first substrate 19, (b) exposing the first electrically
insulating film 16 to a light, and (c) developing the first
electrically insulating film 16. The method may omit the steps of
forming a resist for patterning the first electrically insulating
film 16, and removing the resist, in comparison with the method in
which the first electrically insulating film 16 is composed of
photo-insensitive resin.
[0121] In the step having been explained with reference to FIG. 6C,
the patterned first electrically insulating film 16 is molten to
have rounded corners, by annealing the first electrically
insulating film 16 at a temperature in the range of 80 to 300
degrees centigrade. As an alternative, the first electrically
insulating film 16 may be molten to have rounded corners through
the use of chemical instead of annealing the first electrically
insulating film 16. If the second electrically insulating film 17
only could present a sufficiently smooth wavy surface, it would not
be always necessary to apply any process to the first electrically
insulating film 16 to have rounded corners.
[0122] In the first embodiment, the first and second electrically
insulating films 16 and 17 were composed of polyimide commercially
available from Nissan Kagaku Industry Co. Ltd., under the trade
name of "RN-812". The conditions of coating the polyimide were as
follows.
[0123] Number of revolution in spin-coating: 1200 r.p.m.
[0124] Temporarily baking temperature: 90 degrees centigrade
[0125] Temporarily baking time: 10 minutes
[0126] Baking temperature: 250 degrees centigrade
[0127] Baking time: 1 hour
[0128] The resist used for patterning the electrically insulating
films 16 and 17 were formed in the following conditions.
[0129] Number of revolution in spin-coating: 1000 r.p.m.
[0130] Temporarily baking temperature: 90 degrees centigrade
[0131] Temporarily baking time: 5 minutes
[0132] Post baking temperature (after patterning): 90 degrees
centigrade
[0133] Post baking time: 30 minutes
[0134] The conditions for dry-etching the above-mentioned polyimide
film with the patterned resist being used as a mask were as
follows.
[0135] Etching gas: FCl.sub.4+O.sub.2
[0136] Gas flow ratio (FCl.sub.4/O.sub.2): 0.5-1.5
[0137] Reaction pressure: 0.665-39.9 Pa
[0138] Plasma power: 100-300 W
[0139] The photolithography was carried out under ordinary resist
processes.
[0140] Though the first and second electrically insulating films 16
and 17 are composed of the same organic resin in the first
embodiment, they may be composed of different materials from each
other. The second electrically insulating film 17 could have a
desired wavy surface by composing the first and second electrically
insulating films 16 and 17 of a combination of inorganic material
and organic material such as acrylic resin and polyimide resin,
silicon nitride and acrylic resin, silicon dioxide and polyimide or
vice versa. In addition, if the second electrically insulating film
17 could be designed to have a sufficiently smooth wavy surface,
the first electrically insulating film 16 might be formed by
evaporation, sputtering or CVD, as well as coating.
[0141] Then, as illustrated in FIG. 6E, a metal film 18b composed
of metal having a high reflectivity is formed entirely over the
second electrically insulating film 17.
[0142] Then, as illustrated in FIG. 6F, a resist 26 is formed
entirely covering the metal film 18b.
[0143] Then, as illustrated in FIG. 6G, the resist 26 is patterned
by being exposed to a light and developed into a resist pattern 26a
covering only an area in which the reflection electrode 18 is to be
formed.
[0144] Then, the metal film 18b is etched with the resist pattern
26a being used as a mask. As a result, the metal film 18b is
removed in areas between adjacent pixels, specifically, above the
gate line 1 and the drain line 2, and further in the terminal area
extending outside a pixel located outermost in the display area, in
order to allow the resultant reflection electrode 18 to be
electrically connected to the source electrode 15 in each of pixel
and act as a pixel electrode.
[0145] Thereafter, the resist pattern 26a is removed. Thus, there
is fabricated the TFT substrate 5 as illustrated in FIG. 6H.
[0146] In the first embodiment, the reflection electrode 18 is
composed of aluminum which has high reflection ratio, and well
matches with TFT process. By patterning the aluminum, the resultant
reflection electrode 18 acting as a pixel electrode and a
reflection plate was formed. The aluminum was wet-etched through
the use of an etchant composed of mixture of phosphoric acid,
acetic acid and nitric acid and heated at 60 degrees centigrade.
However, it should be noted that the reflection electrode 18 might
be composed any metal, if it had high reflectivity, other than
aluminum. For instance, the reflection electrode 18 may be composed
of silver or silver alloy which has higher reflection ratio than
that of aluminum, ensuring brighter reflection performance than
that of aluminum.
[0147] After alignment process was applied, the TFT substrate 5 and
the opposing substrate 6 were adhered to each other by applying an
epoxy adhesive to marginal portions of the substrates 5 and 6 with
spacers such as plastic particles being sandwiched therebetween
such that the electrically insulating film 17 formed on the TFT
substrate 5 and the common electrode 22 formed on the opposing
substrate 6 faced each other. Thereafter, liquid crystal was
injected into a space formed between the TFT substrate 5 and the
opposing substrate 6 to thereby form the liquid crystal layer
4.
[0148] In the above-mentioned liquid crystal display device in
which the second electrically insulating film 17 cooperates with
the first electrically insulating film 16 to form the wavy surface,
and the reflection electrode 18 is formed on the wavy surface of
the second electrically insulating film 17, the second electrically
insulating film 17 is designed to have its end deviated from an end
of the first electrically insulating film 16 in the terminal area
extending outside a pixel located outermost in the display area,
specifically, the second electrically insulating film 17 extends
outwardly from an end of the first electrically insulating film 16,
and in addition, the second electrically insulating film 17 is
designed to have a thickness in the predetermined range. The
above-mentioned structure of the liquid crystal display device in
accordance with the first embodiment would prevent a variance in a
thickness of the resist used for patterning the reflection
electrode 18, and thereby, further prevent unintentional parasitic
capacity and short-circuiting between adjacent pixels both caused
by the non-removed portion 18a of the reflection electrode 18 (see
FIG. 3G).
[0149] The thin film transistor 3 as a switching device may be
comprised of a stagger type thin film transistor or MIM diode. Even
if the thin film transistor 3 is designed to have a reverse-stagger
structure, the reverse-stagger structure is not to be limited to
such a structure as mentioned in the first embodiment, but may have
other structures.
[0150] Though each of the first and second substrates 10 and 20 is
comprised of a glass substrate in the first embodiment, they may be
comprised of a plastic substrate, a ceramics substrate or a
semiconductor substrate. In addition, the first embodiment may be
applied to a display device including optical materials other than
liquid crystal.
Second Embodiment
[0151] Hereinbelow is explained a method of fabricating a TFT
substrate in the reflection type liquid crystal display device in
accordance with the second embodiment, with reference to FIGS. 10A
to 10H. The second embodiment has an object of simplifying a method
of fabricating a TFT substrate. Parts other than the TFT substrate
in the second embodiment are fabricated in the same manner as the
first embodiment.
[0152] Similarly to the first embodiment, first, a metal layer
composed of chromium, for instance, is formed on the first
substrate 10 composed of glass, for instance, by sputtering. Then,
the metal layer is patterned into the gate line 1 and the gate
electrode 11 by photolithography and etching
[0153] Then, a silicon nitride film which will make the gate
insulating film 12 is formed all over the first substrate 10. Then,
a non-doped amorphous silicon film and a n+-doped amorphous silicon
film are successively formed on the gate insulating film 12 by CVD.
Thereafter, those amorphous silicon layers are patterned into the
amorphous silicon layer 13a and the n+ amorphous silicon layer
13b.
[0154] Then, a chromium film is formed over the amorphous silicon
layer 13a and the n+ amorphous silicon layer 13b by sputtering, and
subsequently, patterned into the drain electrode 14 and the source
electrode 15. Then, the n+ amorphous silicon layer 13b is
dry-etched in an area in alignment with a space formed between the
drain electrode 14 and the source electrode 15, to thereby form a
channel region.
[0155] Then, a silicon nitride film is formed over the first
substrate 10 by CVD, and subsequently, patterned into a passivation
film (not illustrated).
[0156] Thus, as illustrated in FIG. 10A, the thin film transistor 3
is fabricated on the first substrate 10.
[0157] Whereas the first and second electrically insulating films
16 and 17 are formed in separate steps in the above-mentioned first
embodiment, they are formed in a single step for simplifying the
method of fabricating the liquid crystal display device, in the
second embodiment, as follows.
[0158] As illustrated in FIG. 10B, an electrically insulating and
photo-sensitive film 16a composed of organic or inorganic material
is coated all over the gate insulating film 12. Similarly to the
first embodiment, the electrically insulating and photo-sensitive
film 16a is comprised of a polyimide film, and coated in the
following conditions.
[0159] Number of revolution in spin-coating: 1200 r.p.m.
[0160] Temporarily baking temperature: 90 degrees centigrade
[0161] Temporarily baking time: 10 minutes
[0162] Baking temperature: 250 degrees centigrade
[0163] Baking time: 1 hour
[0164] The second embodiment is characterized in that a half-tone
mask 27 is used for exposing the electrically insulating and
photo-sensitive film 16a to a light, and developing the same. As
illustrated in FIG. 10B, the half-tone mask 27 is designed to
include a light-permeable portion 27a through which a light can
pass, a half-light-permeable portion 27b through which a light can
pass after being attenuated to some degree, and a light-impermeable
portion 27c through which a light cannot pass. The half-tone mask
27 is positioned above the electrically insulating film 16a such
that the light-impermeable portion 27c will define a raised
portion, the half-light-impermeable portion 27b will define a
recessed portion, and the light-permeable portion 27a will define
an area in which the electrically insulating film 16a is entirely
removed.
[0165] Then, the electrically insulating and photo-sensitive film
16a is exposed to a light through the half-tone mask 27, and then,
developed. As a result, as illustrated in FIG. 10C, the
electrically insulating and photo-sensitive film 16a remains
non-removed in an area in alignment with the light-impermeable
portion 27c, and is etched to some degree in an area in alignment
with the half-light-permeable portion 27b. Thus, the electrically
insulating and photo-sensitive film 16a has raised and recessed
portions, as illustrated in FIG. 10C.
[0166] In the half-tone mask 27, the half-light-permeable portion
27b is designed to be located adjacent to the light-permeable
portion 27a in order for the electrically insulating film 16a not
to have a steep step.
[0167] By using the half-tone mask 27, the electrically insulating
film 16a is entirely removed in an area in alignment with the
light-permeable portion 27a by being exposed to a light for a long
time or being exposed to an intensive light, the electrically
insulating film 16a is removed to some degree in an area in
alignment with the half-light-permeable portion 27b by being
exposed to a light for a short time or being exposed to a weak
light, or the electrically insulating film 16a is not removed at
all in an area in alignment with the light-impermeable portion 27c
by not being exposed to a light. As a result, it would be possible
to form both the first and second electrically insulating films 16
and 17 in a single step.
[0168] Then, as illustrated in FIG. 10D, a process for changing a
shape is applied to the electrically insulating film 16a to thereby
round the electrically insulating film 16a at corners thereof.
Specifically, the electrically insulating film 16a is molten to
have rounded corners, by being annealed at a temperature in the
range of 80 to 300 degrees centigrade. As an alternative, the
electrically insulating film 16a may be molten to have rounded
corners through the use of chemical instead of annealing the
electrically insulating film 16a. If the electrically insulating
film 16a could form the raised and recessed portions only by
development, it would not be always necessary to apply any
shape-changing process to the electrically insulating film 16a to
have rounded corners.
[0169] Then, similarly to the first embodiment, a metal film 18b
composed of metal having a high reflectivity is formed entirely
over the first substrate 10, as illustrated in FIG. 10E.
[0170] Then, as illustrated in FIG. 10F, a resist 26 is formed
entirely covering the metal film 18b.
[0171] Then, as illustrated in FIG. 10G; the resist 26 is patterned
by being exposed to a light and developed into a resist pattern 26a
covering only an area in which the reflection electrode 18 is to be
formed.
[0172] Then, the metal film 18b is etched with the resist pattern
26a being used as a mask. As a result, the metal film 18b is
removed in areas between adjacent pixels, specifically, above the
gate line 1 and the drain line 2, and further in the terminal area
extending outside a pixel located outermost in the display area, in
order to allow the resultant reflection electrode 18 to be
electrically connected to the source electrode 15 in each of pixel
and act as a pixel electrode.
[0173] Thereafter, the resist pattern 26a is removed. Thus, there
is fabricated the TFT substrate 5 as illustrated in FIG. 10H.
[0174] As mentioned above, the use of the half-tone mask 27 would
make it possible to form the electrically insulating film 16a in a
single step, ensuring reduction in the number of fabrication steps
in comparison with the first embodiment.
[0175] In addition, in the terminal area extending outside a pixel
located outermost in the display area, the electrically insulating
film 16a is removed to some degree in area outside an area in which
the electrically insulating film 16a is not removed at all.
Accordingly, the electrically insulating film 16a would not form a
steep step, which ensures prevention of generation of the resist
residue 26b, and further of unintentional generation of parasitic
capacity caused by the non-removed portion 18a of the reflection
electrode 18.
[0176] In the above-mentioned second embodiment, the electrically
insulating film 16a has raised and recessed portions through the
use of the half-tone mask 27. Instead of using the half-tone mask
27, there may be used a first mask for removing the electrically
insulating film 16a only to a degree and a second mask for not
removing the electrically insulating film 16a, wherein light
exposure through the first and second masks are varied. As an
alternative, the half-light-impermeable portion may be formed by
means of a mask having a pattern smaller than an upper limit of
exposure ability. As an alternative, light exposure may be varied
in areas of the electrically insulating film 16a.
[0177] In the above-mentioned first and second embodiments, the
second electrically insulating film 17 is designed to have its end
deviated from an end of the first electrically insulating film 16
in the terminal area extending outside a pixel located outermost in
the display area, specifically, the second electrically insulating
film 17 extends outwardly from an end of the first electrically
insulating film 16, and in addition, the second electrically
insulating film 17 is designed to have a thickness in the
predetermined range. Thereby, it would be possible to prevent a
variance in a thickness of the resist used for patterning the
reflection electrode 18, and, further prevent unintentional
parasitic capacity and short-circuiting between adjacent pixels
both caused by the non-removed portion 18a of the reflection
electrode 18 (see FIG. 3G).
[0178] The above-mentioned first and second embodiments may be
applied to a contact area where the reflection electrode 18 is
electrically connected to the source electrode 15 of the thin film
transistor 3. Specifically, the second electrically insulating film
17 is designed to extend inwardly from the first electrically
insulating film 16 by a certain length at the contact area. This
ensures that a step formed by the first and second electrically
insulating films 16a and 17 in the vicinity of the contact are can
be smoothed. Hence, it would be possible to have the same
advantages as those presented by the first and second
embodiments.
[0179] While the present invention has been described in connection
with certain preferred embodiments, it is to be understood that the
subject matter encompassed by way of the present invention is not
to be limited to those specific embodiments. On the contrary, it is
intended for the subject matter of the invention to include all
alternatives, modifications and equivalents as can be included
within the spirit and scope of the following claims.
[0180] The entire disclosure of Japanese Patent Application No.
2001-024237 filed on Jan. 31, 2001 including specification, claims,
drawings and summary is incorporated herein by reference in its
entirety.
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