U.S. patent application number 11/086640 was filed with the patent office on 2005-10-27 for device mounting board.
Invention is credited to Kojima, Noriaki, Nakamura, Takeshi, Usui, Ryosuke, Watanabe, Hiroyuki.
Application Number | 20050238878 11/086640 |
Document ID | / |
Family ID | 35050061 |
Filed Date | 2005-10-27 |
United States Patent
Application |
20050238878 |
Kind Code |
A1 |
Usui, Ryosuke ; et
al. |
October 27, 2005 |
Device mounting board
Abstract
A miniaturized device mounting board having high reliability is
provided. A material constituting a photoimageable solder resist
layer 328 can be formed into a thin film while voids and unevenness
are suppressed to occur by using a cardo type polymer which is of a
base material and a predetermined additive. Therefore, a film
having a thickness of about 25 .mu.m can be used as the material
constituting the photoimageable solder resist layer 328. The
material constituting photoimageable solder resist layer 328
becomes about two-thirds in thickness, when compared with the
conventional resin material having the thickness of about 35 .mu.m,
which is used as the photoimageable solder resist layer 328.
Accordingly, a device mounting board 400 can be miniaturized.
Inventors: |
Usui, Ryosuke;
(Ichinomiya-City, JP) ; Nakamura, Takeshi;
(Sawa-Gun, JP) ; Kojima, Noriaki; (Ogaki-City,
JP) ; Watanabe, Hiroyuki; (Bisai-City, JP) |
Correspondence
Address: |
FISH & RICHARDSON P.C.
CITIGROUP CENTER 52ND FLOOR
153 EAST 53RD STREET
NEW YORK
NY
10022-4611
US
|
Family ID: |
35050061 |
Appl. No.: |
11/086640 |
Filed: |
March 22, 2005 |
Current U.S.
Class: |
428/411.1 ;
257/E23.077; 428/457; 428/901 |
Current CPC
Class: |
H01L 2224/16225
20130101; H01L 24/97 20130101; H01L 23/49894 20130101; H05K 1/024
20130101; H01L 2924/12042 20130101; H05K 1/0271 20130101; H05K
3/4688 20130101; H05K 3/4655 20130101; H01L 2224/48091 20130101;
H01L 2924/15311 20130101; H05K 3/4652 20130101; H01L 2924/00014
20130101; H01L 2924/00012 20130101; H01L 2924/00014 20130101; H01L
2224/45144 20130101; H01L 2924/181 20130101; H01L 2924/00 20130101;
H01L 2224/48227 20130101; H05K 3/287 20130101; H05K 2201/068
20130101; H01L 2924/12042 20130101; H01L 2924/19105 20130101; H01L
2224/48091 20130101; Y10T 428/31504 20150401; Y10T 428/31678
20150401; H01L 2224/45144 20130101; H01L 2924/181 20130101 |
Class at
Publication: |
428/411.1 ;
428/901; 428/457 |
International
Class: |
B32B 027/00; B32B
015/04 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 31, 2004 |
JP |
2004-105764 |
Mar 31, 2004 |
JP |
2004-106228 |
Mar 31, 2004 |
JP |
2004-105583 |
Claims
What is claimed is:
1. A device mounting board on which a device is mounted, the device
mounting board comprising: a base material; a dielectric film which
is provided on the base material; and a solder resist layer which
is provided on the dielectric film, wherein said solder resist
layer contains a cardo type polymer.
2. A device mounting board according to claim 1, wherein wiring
which connects said device is provided in said solder resist
layer.
3. A device mounting board according to claim 1, wherein a glass
transition temperature of said solder resist layer ranges from
180.degree. C. to 220.degree. C., and a dielectric dissipation
factor of said solder resist layer ranges from 0.001 to 0.04 when
an alternating electric field having a frequency of 1 MHz is
applied to said solder resist layer.
4. A device mounting board according to claim 2, wherein the glass
transition temperature of said solder resist layer ranges from
180.degree. C. to 220.degree. C., and the dielectric dissipation
factor of said solder resist layer ranges from 0.001 to 0.04 when
the alternating electric field having the frequency of 1 MHz is
applied to said solder resist layer.
5. A device mounting board according to claim 3, wherein a linear
expansion coefficient of said solder resist layer ranges from 50
ppm/.degree. C. to 80 ppm/.degree. C. in a range not more than the
glass transition temperature of said solder resist layer.
6. A device mounting board on which a device is mounted, the device
mounting board comprising: a base material; and a dielectric film
which is provided on the base material, wherein said base material
contains a cardo type polymer.
7. A device mounting board according to claim 6, wherein wiring
which connects said device is provided on said dielectric film.
8. A device mounting board according to claim 6, wherein a glass
transition temperature of said base material ranges from
180.degree. C. to 220.degree. C., and a dielectric dissipation
factor of said base material ranges from 0.001 to 0.04 when an
alternating electric field having a frequency of 1 MHz is applied
to said base material.
9. A device mounting board according to claim 7, wherein a glass
transition temperature of said base material ranges from
180.degree. C. to 220.degree. C., and a dielectric dissipation
factor of said base material ranges from 0.001 to 0.04 when an
alternating electric field having a frequency of 1 MHz is applied
to said base material.
10. A device mounting board according to claim 8, wherein the
linear expansion coefficient of said base material ranges from 50
ppm/.degree. C. to 80 ppm/.degree. C. in the range not more than
the glass transition temperature of said base material.
11. A device mounting board according to claim 9, wherein the
linear expansion coefficient of said base material ranges from 50
ppm/.degree. C. to 80 ppm/.degree. C. in the range not more than
the glass transition temperature of said base material.
12. A device mounting board on which a device is mounted, the
device mounting board comprising: a base material; and a dielectric
film which is provided on the base material; wherein said
dielectric film contains a cardo type polymer.
13. A device mounting board according to claim 12, wherein wiring
which connects said device is provided on said dielectric film.
14. A device mounting board according to claim 12, wherein a glass
transition temperature of said dielectric film ranges from
180.degree. C. to 220.degree. C., and a dielectric dissipation
factor of dielectric film ranges from 0.001 to 0.04 when an
alternating electric field having a frequency of 1 MHz is applied
to said dielectric film.
15. A device mounting board according to claim 13, wherein the
glass transition temperature of said dielectric film ranges from
180.degree. C. to 220.degree. C., and the dielectric dissipation
factor of said dielectric film ranges from 0.001 to 0.04 when the
alternating electric field having the frequency of 1 MHz is applied
to said dielectric film.
16. A device mounting board according to claim 14, wherein a linear
expansion coefficient of said dielectric film ranges from 50
ppm/.degree. C. to 80 ppm/.degree. C. in a range not more than the
glass transition temperature of said dielectric film.
17. A device mounting board according to claim 7, wherein a second
dielectric film is provided on said dielectric film, and said
wiring is covered with said second dielectric film.
18. A device mounting board according to claim 13, wherein the
second dielectric film is provided on said dielectric film, and
said wiring is covered with said second dielectric film.
19. A device mounting board according to claim 17, wherein said
second dielectric film contains the cardo type polymer.
20. A device mounting board according to claim 18, wherein said
second dielectric film contains the cardo type polymer.
21. A device mounting board according to claim 19, wherein the
glass transition temperature of said second dielectric film ranges
from 180.degree. C. to 220.degree. C., and the dielectric
dissipation factor of said second dielectric film ranges from 0.001
to 0.04 when the alternating electric field having the frequency of
1 MHz is applied to said second dielectric film.
22. A device mounting board according to claim 20, wherein the
glass transition temperature of said second dielectric film ranges
from 180.degree. C. to 220.degree. C., and the dielectric
dissipation factor of said second dielectric film ranges from 0.001
to 0.04 when the alternating electric field having the frequency of
1 MHz is applied to said second dielectric film.
23. A device mounting board according to claim 21, wherein the
linear expansion coefficient of said second dielectric film ranges
from 50 ppm/.degree. C. to 80 ppm/.degree. C. in the range not more
than the glass transition temperature of said second dielectric
film.
24. A device mounting board according to claim 22, wherein the
linear expansion coefficient of said second dielectric film ranges
from 50 ppm/.degree. C. to 80 ppm/.degree. C. in the range not more
than the glass transition temperature of said second dielectric
film.
25. A device mounting board on which a device is mounted, the
device mounting board comprising: a base material; a dielectric
film which is provided on the base material; and a solder resist
layer which is provided on the dielectric film, the solder resist
layer including a plurality of layers, wherein at least one of
layers in said solder resist layer contains a cardo type
polymer.
26. A device mounting board according to claim 25, wherein a top
surface layer of said solder resist layer contains the cardo type
polymer.
27. A device mounting board according to claim 25, wherein wiring
which connects said device is provided in said solder resist
layer.
28. A device mounting board according to claim 26, wherein the
wiring which connects said device is provided in said solder resist
layer.
29. A device mounting board according to claim 25, wherein a glass
transition temperature of the solder resist layer containing said
cardo type polymer ranges from 180.degree. C. to 220.degree. C.,
and a dielectric dissipation factor of the solder resist layer
containing said cardo type polymer ranges from 0.001 to 0.04 when
an alternating electric field having a frequency of 1 MHz is
applied to the solder resist layer containing said cardo type
polymer.
30. A device mounting board according to claim 26, wherein the
glass transition temperature of the solder resist layer containing
said cardo type polymer ranges from 180.degree. C. to 220.degree.
C., and the dielectric dissipation factor of the solder resist
layer containing said cardo type polymer ranges from 0.001 to 0.04
when the alternating electric field having the frequency of 1 MHz
is applied to the solder resist layer containing said cardo type
polymer.
31. A device mounting board according to claim 27, wherein the
glass transition temperature of the solder resist layer containing
said cardo type polymer ranges from 180.degree. C. to 220.degree.
C., and the dielectric dissipation factor of the solder resist
layer containing said cardo type polymer ranges from 0.001 to 0.04
when the alternating electric field having the frequency of 1 MHz
is applied to the solder resist layer containing said cardo type
polymer.
32. A device mounting board according to claim 29, wherein a linear
expansion coefficient of the solder resist layer containing said
cardo type polymer ranges from 50 ppm/.degree. C. to 80
ppm/.degree. C. in a range not more than the glass transition
temperature of the solder resist layer containing said cardo type
polymer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a device mounting board and
a semiconductor apparatus using the device mounting board.
[0003] 2. Description of the Related Art
[0004] Recently, multifunction and high performance of portable
electronic devices such as a cellular phone, PDA, DVC, and DSC are
accelerated, so that miniaturization and weight reduction are
necessary in order that such electronic devices are accepted in the
market. A highly integrated system-LSI is required in order to
realize the miniaturization and the weight reduction. On the other
hand, the ease-to-use and convenient electronic devices are
demanded, and the multifunction and the high performance are also
demanded for LSIs used in the electronic devices. Therefore, while
the number of I/Os are increased as an LSI chip is integrated, and
the miniaturization of a package itself is also strongly demanded.
In order to achieve compatibility between the integration of the
LSI chip and the miniaturization of the package, development on the
semiconductor package suitable to the high-density board mounting
of the semiconductor component is strongly demanded. In order to
response such demands, various package technologies called as CSP
(Chip Size Package) are being developed.
[0005] BGA (Ball Grid Array) is well known as an example of such
packages. In BGA, the semiconductor chip is mounted on a package
board, and solder balls are formed as external terminals in an area
array on the opposite surface after the semiconductor chip on the
package board is molded with resin. In BGA, because the mounting
area is achieved over the surface, the package can be relatively
easily miniaturized. Further, the high-accuracy mounting technology
is not required because it is unnecessary to be compatible with a
narrow pitch on the side of a circuit board. Therefore, even if the
package is somewhat expensive, the use of BGA enables the mounting
cost to be reduced as a whole.
[0006] FIG. 12 is a view showing a schematic configuration of the
conventional BGA. BGA 100 has a structure in which an LSI chip 102
is mounted on a glass epoxy board 106 through an adhesive layer
108. The LSI chip 102 is molded by a sealing resin 110. The LSI
chip 102 and the glass epoxy board 106 are electrically connected
to each other by metal wires 104. Solder balls 112 are arranged in
an array on the backside of the glass epoxy board 106. BGA 100 is
mounted on a printed wiring board through the solder balls 112.
[0007] An example of other CSPs is described in Japanese Patent
Laid-Open Publication No. 2002-94247. A system in package on which
a high-frequency LSI is mounted is disclosed in Japanese Patent
Laid-Open Publication No. 2002-94247. The package includes a base
board on which a multilayer wiring structure is formed, and
semiconductor devices such as the high-frequency LSI are formed on
the base board. The multilayer wiring structure is one in which the
core board, a copper foil with dielectric resin layer, a solder
resist layer, and the like are laminated.
[0008] In the system in package technology including Japanese
Patent Laid-Open Publication No. 2002-94247, because the solder
resist layer is located on the top layer of the multi-layer wiring
structure, high processing accuracy is required. Because the
semiconductor device such as a bare chip is directly mounted on the
surface of the solder resist layer, high humidity resistance and
high adhesion properties are also required. Further, because the
solder resist layer acts as an inter-wiring dielectric film between
the wiring layers in which wiring patterns are embedded therein, a
decrease in parasitic capacitance is required.
[0009] Due to the demand for the miniaturization of the package,
thickness reduction is required in the solder resist layer.
[0010] In the system in package technology including Japanese
Patent Laid-Open Publication No. 2002-94247, sometimes the
dielectric resin layer differs from the layer which is adjacent to
the dielectric resin layer in a linear expansion coefficient and
the like. Therefore, in a heat cycle during manufacturing the
semiconductor apparatus or during use of the semiconductor
apparatus, sometimes there are differences in expansion and
contraction levels between the dielectric resin layer and the
layers adjacent to the dielectric resin layer. As a result,
sometimes a decrease in adhesion properties between the dielectric
resin layer and the layers adjacent to the dielectric resin layer
is caused. Further, because the dielectric resin layer acts as the
inter-wiring dielectric film between the wiring layers in which the
wiring patterns are embedded therein, the decrease in parasitic
capacitance is required.
[0011] Due to the demand for the miniaturization of the package,
the thickness reduction is required in a base material or the
dielectric resin layer.
[0012] In the system in package technology including Japanese
Patent Laid-Open Publication No. 2002-94247, the solder resist
layer acts as the inter-wiring dielectric film between the wiring
layers in which wiring pattern are embedded therein, and the
semiconductor device such as the bare chip is directly mounted on
the surface of the solder resist layer formed on the top layer.
Therefore, it is necessary to improve not only mechanical rigidity
and heat-resistant properties but also the parasitic capacitance,
the humidity resistance, and the adhesion properties.
SUMMARY OF THE INVENTION
[0013] In view of the foregoing, an object of the invention is to
provide a miniaturized device mounting board which has high
reliability.
[0014] Further, another object of the invention is to provide a
highly reliable device mounting board.
[0015] In an aspect of the invention, a device mounting board on
which a device is mounted, the device mounting board includes a
base material, a dielectric film which is provided on the base
material, and a solder resist layer which is provided on the
dielectric film, wherein the solder resist layer contains a cardo
type polymer.
[0016] According to the invention, when the solder resist layer
contains the cardo type polymer, the characteristics such as
resolution and humidity absorption properties can be improved in
the solder resist layer. Further, the thickness reduction can also
be performed in the solder resist layer. Therefore, the
miniaturized device mounting board having high reliability can be
provided.
[0017] It is possible that wiring for connecting the elements is
provided in the solder resist layer.
[0018] It is possible that glass transition temperature of the
solder resist layer ranges from 180.degree. C. to 220.degree. C. In
the case where an alternating electric field having the frequency
of 1 MHz is applied to the solder resist layer, it is possible that
a dielectric dissipation factor ranges from 0.001 to 0.04.
[0019] In a range of not more than the glass transition temperature
of the solder resist layer, it is possible that a linear expansion
coefficient (CTE) ranges from 50 ppm/.degree. C. to 80 ppm/.degree.
C.
[0020] According to the invention, the semiconductor apparatus
which includes the device mounting board having the above-described
features and the semiconductor device mounted on the device
mounting board is provided.
[0021] According to the invention, the miniaturized semiconductor
apparatus having the high reliability can be provided by including
the miniaturized device mounting board having the high
reliability.
[0022] It is possible that the dielectric film is formed by either
a single-layer structure or a multi-layer structure.
[0023] In the invention, the device mounting board shall mean a
board on which the semiconductor device such as an LSI chip and an
IC chip is mounted. An interposer board in the later-mentioned ISB
(registered trademark) structure can be cited as an example of the
device mounting board. It is possible that the device mounting
board includes a core board such as a silicon substrate having the
rigidity, or it is possible that the device mounting board does not
includes the core board but has a core-less structure including the
multi-layer dielectric film formed of the dielectric resin
films.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] FIG. 1 is a view for explaining a structure of ISB
(registered trademark);
[0025] FIG. 2A is a view for explaining a process of manufacturing
ISB (registered trademark), and FIG. 2B is a view for explaining a
process of manufacturing BGA;
[0026] FIGS. 3A and 3B are a process sectional view showing a
procedure of manufacturing a device mounting board according to a
first embodiment of the invention;
[0027] FIGS. 4A to 4C are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention;
[0028] FIGS. 5A and 5B are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention;
[0029] FIGS. 6A to 6C are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention;
[0030] FIGS. 7A and 7B are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention; FIGS. 8A to 8C are a process
sectional view showing the procedure of manufacturing the device
mounting board according to the first embodiment of the
invention;
[0031] FIGS. 9A and 9B are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention;
[0032] FIGS. 10A and 10B are a process sectional view showing the
procedure of manufacturing the device mounting board according to
the first embodiment of the invention;
[0033] FIGS. 11A to 11D are a sectional view for explaining a
structure of a semiconductor apparatus according to a second
embodiment of the invention;
[0034] FIG. 12 shows a schematic configuration of the conventional
BGA;
[0035] FIGS. 13A and 13B are a process sectional view for
explaining a procedure of manufacturing a device mounting board
according to Example 1 of a third embodiment;
[0036] FIGS. 14A to 14C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 1 of the third embodiment;
[0037] FIGS. 15A and 15B are a process sectional view for
explaining the procedure of manufacturing the device mounting board
according to Example 1 of the third embodiment;
[0038] FIGS. 16A to 16C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 1 of the third embodiment; FIGS. 17A and 17B are a
process sectional view for explaining the procedure of
manufacturing the device mounting board according to Example 1 of
the third embodiment;
[0039] FIGS. 18A to 18C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 1 of the third embodiment;
[0040] FIGS. 19A and 19B are a process sectional view for
explaining the procedure of manufacturing the device mounting board
according to Example 1 of the third embodiment;
[0041] FIGS. 20A and 20B are a process sectional view for showing
the procedure of manufacturing the device mounting board according
to Example 1 of the third embodiment;
[0042] FIGS. 21A to 21D are a sectional view for explaining a
structure of a semiconductor apparatus according to Example 2 of
the third embodiment;
[0043] FIGS. 22A and 22B are a process sectional view for
explaining a procedure of manufacturing a device mounting board
according to Example 3 of a fourth embodiment;
[0044] FIGS. 23A to 23C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 3 of the fourth embodiment;
[0045] FIGS. 24A and 24B are a process sectional view for
explaining the procedure of manufacturing the device mounting board
according to Example 3 of the fourth embodiment;
[0046] FIGS. 25A to 25C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 3 of the fourth embodiment;
[0047] FIGS. 26A and 26B are a process sectional view for
explaining the procedure of manufacturing the device mounting board
according to Example 3 of the fourth embodiment;
[0048] FIGS. 27A to 27C are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 3 of the fourth embodiment;
[0049] FIGS. 28A and 28B are a process sectional view for
explaining the procedure of manufacturing the device mounting board
according to Example 3 of the fourth embodiment;
[0050] FIGS. 29A to 29B are a process sectional view for explaining
the procedure of manufacturing the device mounting board according
to Example 3 of the fourth embodiment; and
[0051] FIGS. 30A to 30D are a sectional view for explaining a
structure of a semiconductor apparatus according to Example 4 of
the fourth embodiment.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0052] First, an ISB structure adopted in the later-mentioned
embodiments will be described. ISB (Integrated System in Board;
registered trademark) is a unique package which has developed by
the inventors. In packaging an electronic circuit mainly including
a semiconductor bare chip, ISB is a unique coreless system in
package in which a core (base material) for supporting circuit
components while having a wiring pattern made of copper.
[0053] FIG. 1 is a schematic view showing an example of ISB. In
order to clearly explain the whole structure of ISB, FIG. 1 shows
only a single wiring layer. However, actually ISB has the structure
in which the plural wiring layers are laminated. ISB has the
structure, in which an LSI bare chip 201, a transistor bare chip
202, and a chip capacitor 203 are connected by the wiring made of a
copper pattern 205. The LSI bare chip 201 is electrically connected
to lead electrodes and the wiring by gold wire bonding 204. A
conductive paste 206 is provided immediately below the LSI bare
chip 201, and ISB is mounted on the printed wiring board through
the conductive paste 206. The whole of ISB is sealed by a resin
package 207 made of epoxy resin or the like.
[0054] The package has the following advantages:
[0055] (i) The mounting can be performed with no core, so that the
miniaturization and the thickness reduction of the transistor, IC,
and LSI can be realized.
[0056] (ii) The circuit can be formed by the transistor, the system
LSI, and the chip type capacitor and resistor to perform the
packaging, so that advanced SIP (System in Package) can be
realized.
[0057] (iii) The current semiconductor devices can be combined, so
that the system LSI can be developed within a short period of
time.
[0058] (iv) The semiconductor bare chip is directly mounted on the
copper material being right under, so that good heat dissipation
characteristics can be obtained.
[0059] (v) The circuit wiring is made of the copper material, and
the core material is not used, so that the circuit wiring has a low
dielectric constant, which exerts the excellent performance in
high-speed data transfer and a high-frequency circuit.
[0060] (vi) ISB package has the structure in which the electrode is
embedded inside the package, so that particle contamination of the
electrode material can be prevented from generating.
[0061] (vii) A package size can be freely selected, and an amount
of waste material per one package becomes about one-tenth when
compared with a 64-pin SQFP package, so that environmental load can
be reduced.
[0062] (viii) ISB is not the circuit board on which the components
are simply mounted, but is the circuit board to which functions are
added, so that the new-concept system configuration can be
realized.
[0063] (ix) Pattern design of ISB is easily performed like the
pattern design of the printed circuit board, so that engineers in
an electronic-device assembly plant can design the pattern by
themselves.
[0064] Then, the advantages of the ISB manufacturing process will
be described. FIG. 2A shows the ISB manufacturing process, and FIG.
2B shows the conventional CSP manufacturing process. In FIG. 2B, a
frame is formed on a base board, and a chip is mounted in an
element forming region which is separated into frames. Then, the
package is provided for each element by a thermosetting resin, and
punching is performed to each element using a punching die. In the
punching which is of the final process, because the mold resin and
the base board are simultaneously cut, sometimes surface roughening
or the like is caused in a cutting plane. Further, sometimes the
large amount of waste material is produced after, the punching, so
that there is the problem in the environmental load.
[0065] On the other hand, FIG. 2A shows the ISB manufacturing
process. The frame is provided on a metal foil, the wiring pattern
is formed in each module forming region, and the circuit element
such as LSI is mounted on the wiring pattern. Then, the packaging
is performed to each module, and a product is obtained by dicing
the frame along a scribe region. After the packaging is performed,
the metal foil which is of the base material is removed prior to
the scribing process, so that only the resin layer is cut in the
dicing during the scribing process. Therefore, the surface
roughening is suppressed in the cutting plane, and accuracy of the
dicing can be improved.
[0066] First Embodiment
[0067] FIG. 10B is a sectional view showing a device mounting board
400 having a four-layer ISB structure according to a first
embodiment.
[0068] The device mounting board 400 according to the first
embodiment has the structure in which an dielectric resin film 312
and a photoimageable solder resist layer 328 are sequentially
laminated on an upper surface of a base material 302. The device
mounting board 400 also has the structure in which the dielectric
resin film 312 and the photoimageable solder resist layer 328 are
sequentially laminated on a lower surface of the base material
302.
[0069] The four-layer ISB structure shall mean the structure which
has the four wiring layers. The wiring layers are embedded in the
dielectric resin film 312 and the photoimageable solder resist
layer 328. For convenience of a process of making a via hole in the
photoimageable solder resist layer 328, it is necessary that the
photoimageable solder resist layer 328 has photosensitivity.
[0070] In the four-layer ISB structure, the same materials forming
the upper and lower surfaces of the dielectric resin layers 312 can
be used while sandwiching the base material 302. Further, the same
materials forming the upper and lower surfaces of the
photoimageable solder resist layers 328 can be used while
sandwiching the base material 302. Therefore, from the viewpoint of
process, there is the advantage that a manufacturing process can be
simplified.
[0071] A through-hole 327 which pierces through the base material
302, the dielectric resin film 312, and the photoimageable solder
resist layer 328 is made.
[0072] A part of the piece of wiring made of a copper film 308, a
part of the piece of wiring made of a copper film 320, a part of a
via portion 311, and the like are embedded in the base material
302. A part of the piece of the wiring made of the copper film 308,
a part of the piece of the wiring made of the copper film 320,
wiring 309, a part of the via portion 311, a part of a via portion
323, and the like are embedded in the dielectric resin film 312. A
part of the piece of the wiring made of the copper film 320, a part
of the via portion 323, and the like are embedded in the
photoimageable solder resist layer 328. An opening 326 is provided
in the photoimageable solder resist layer 328.
[0073] The material used for the base material 302 is not
particularly limited to a glass epoxy board, but any material
having moderate rigidity can be used as the base material 302. For
example, a resin board and a ceramic board can be used as the base
material 302. More specifically, the base material which is
excellent for the high-frequency characteristics because of the low
dielectric constant can be used. Namely, examples of the base
material 302 include polyphenyl ethylene (PPE), bismaleimide
triazine resins (BT-resin), polytetrafluoro-ethylene (Teflon;
registered trademark), polyimide, liquid crystal polymer (LCP),
polynorbornene (PNB), epoxy resins, acrylic resins, ceramics, a
mixture of ceramic and an organic base material. For example, a
thickness of the base material 302 is set to about 60 .mu.m.
[0074] The material used for the dielectric resin film 312 is the
resin material which is softened by heating and the resin material
by which the dielectric resin film 312 can be thinned to a certain
level. Particularly the resin material, which has the low
dielectric constant and the excellent high-frequency
characteristics, can preferably be used. For example, the thickness
of the dielectric resin film 312 is set to about 40 .mu.m.
[0075] It is possible that the dielectric resin film 312 contains
the filling material such as the filler and the fiber. For example,
the granular or fibrous SiO.sub.2 or silicon nitride can be used as
the filler.
[0076] The later-mentioned cardo type polymer contained resin film
is used as the photoimageable solder resist layer 328. It is
preferable that the thickness of the photoimageable solder resist
layer 328 is e.g. not more than about 30 .mu.m, and it is more
preferable that the thickness of the photoimageable solder resist
layer 328 is about 25 .mu.m.
[0077] In the cardo type polymer, a bulky substituent group
obstructs movement of a main chain, which results in excellent
mechanical strength, excellent heat-resistant properties, and the
low linear expansion coefficient. Therefore, in a heat cycle, the
decrease in adhesion properties and delamination are suppressed
between the photoimageable solder resist layer 328 and the layer
around the photoimageable solder resist layer 328 by using the
cardo type polymer contained resin film as the photoimageable
solder resist layer 328. As a result, the reliability is improved
in the device mounting board 400 according to the first
embodiment.
[0078] The multilayer wiring structure including the wiring formed
of copper film 308, the wiring formed of the copper film 320, the
wiring 309, the via portion 311, and the via portion 323 is not
limited to e.g. copper wiring. For example, aluminum wiring,
aluminum alloy wiring, copper alloy wiring, wire-bonded gold
wiring, gold alloy wiring, the mixed wiring formed by these pieces
of wiring, and the like can also be used as the multilayer wiring
structure.
[0079] It is also possible that active elements such as the
transistor and the diode and passive elements such as the capacitor
and the resistor are provided on the surface of or in the
four-layer ISB structure. It is also possible that the active
elements or the passive elements are connected to a multilayer
wiring structure in the four-layer ISB and connected to the
external conductive member through the via portion 323.
[0080] FIGS. 3A to 10B are a process sectional view showing the
device mounting board 400 according to the first embodiment.
[0081] As shown in FIG. 3A, the base material 302 is prepared. The
copper foils 304 are compression-bonded to the base material 302.
Holes having diameters of about 150 nm are made in the copper foil
304 by drilling. For example, the thickness of the base material
302 is set to about 60 .mu.m, and the thickness of the copper foil
304 ranges from about 10 .mu.m to about 15 .mu.m. The material used
for the base material 302 is not particularly limited to the glass
epoxy board, but any material having moderate rigidity can be used
as the base material 302. For example, the resin board and the
ceramic board can be used as the base material 302. More
specifically, the base material which is excellent in the
high-frequency characteristics because of the low dielectric
constant can be used. Namely, examples of the base material 302
include polyphenyl ethylene (PPE), bismaleimide triazine resins
(BT-resin), polytetrafluoro-ethylene (registered trade mark;
Teflon), polyimide, liquid crystal polymer (LCP), polynorbornene
(PNB), epoxy resins, acrylic resins, ceramics, a mixture of ceramic
and an organic base material.
[0082] As shown in FIG. 3B, a photo-etching resist layer 306 is
laminated on the upper surface of the copper foil 304.
[0083] Then, patterning of the photo-etching resist layer 306 is
performed by performing exposure with glass as a mask. Then, as
shown in FIGS. 4A and 4B, using the photo-etching resist layer 306
as the mask, a via hole 307 having the diameter of about 100 .mu.m
is made by chemical etching process using chemicals. Then, the
inside of the via hole 307 is roughened and cleaned by a wet
process. As shown in FIG. 4C, the via hole 307 is filled with the
conductive material to form the via portion 311 by electroless
plating ready for high aspect ratio and then by electrolytic
plating ready for high aspect ratio. Then, the copper films 308 are
formed over the surfaces.
[0084] For example, the via portion 311 can be formed in the
following manner. After a thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the electrolytic plating. Usually palladium
is used as an electroless plating catalyst. In order to cause the
electroless plating catalyst to adhere to the flexible dielectric
resin, palladium is contained in an aqueous solution while being in
a complex state, and the flexible dielectric base material is
dipped to cause the palladium complex to adhere to the surface of
the dielectric base material. In the state of things, nuclei for
starting the plating onto the surface of the flexible dielectric
base material can be formed by reducing the palladium complex to
the metal palladium with a reducing agent.
[0085] As shown in FIG. 5A, photo-etching resist layers 310 are
laminated onto the top surfaces of the upper and lower copper films
308. As shown in FIG. 5B, after the patterning is performed to the
photo-etching resist layer 310 by the exposure with glass as the
mask, the wiring 309 made of copper is formed by etching the copper
film 308 formed of the copper plating layer using the photo-etching
resist layer 310 as the mask. For example, the wiring pattern can
be formed by spraying a point exposed from the resist with a
chemical etching solution to remove the unnecessary copper
plating.
[0086] As shown in FIG. 6A, dielectric resin films 312 with copper
foils 314 are compression-bonded to the top surfaces of the upper
wiring 309 and the lower wiring 309. For example, the thickness of
the resin film 312 is set to about 40 .mu.m, and the thickness of
the copper foil 314 is set in the range from about 10 .mu.m to
about 15 .mu.m.
[0087] Any material which is softened by the heating can be used as
the material used for the dielectric resin film 312. Examples of
the dielectric resin film 312 include epoxy resin, melamine
derivatives such as BT resin, liquid crystal polymer, PPE resin,
polyimide resin, fluororesin, phenolic resin, and polyamide
bismaleimide. It is possible that the dielectric resin film 312
contains the filling material such as the filler and the fiber. For
example, the granular or fibrous SiO.sub.2 or silicon nitride can
be used as the filler.
[0088] With reference to the compression-bonding method, the
dielectric resin film 312 with copper foil is caused to come into
contact with the base material 302 and the wiring 309, and the base
material 302 and the wiring 309 are fitted into the dielectric
resin film 312. Then, as shown in FIG. 6B, the dielectric resin
film 312 is heated in a vacuum or under a reduced pressure to
compression-bond the dielectric resin film 312 to the base material
302 and the wiring 309. As shown in FIG. 6C, the copper foil 314 is
irradiated with an X-ray to make holes 315 which pierce through the
copper foil 314, the dielectric resin film 312, the wiring 309, and
the base material 302.
[0089] As shown in FIG. 7A, photo-etching resist layers 316 are
laminated on the top surfaces of the upper and lower copper foils
314. As shown in FIG. 7B, after the patterning of the photo-etching
resist layer 316 is performed by the exposure with the glass as the
mask, wiring 319 made of copper is formed by etching the copper
foil 314 with the photo-etching resist layer 316 as the mask. For
example, the wiring pattern can be formed by spraying a point
exposed from the resist with the chemical etching solution to
remove the unnecessary copper foil.
[0090] As shown in FIG. 8A, a photo-etching resist layer 317 is
laminated onto the surfaces of the upper wiring 319 and the lower
wiring 319. As shown in FIG. 8B, after the patterning of the
photo-etching resist layer 317 is performed by the exposure with
the glass as the mask, via holes 322 having the diameters of about
100 nm are made using the photo-etching resist layer 317 as the
mask. The inside of the via hole 322 is roughened and cleaned by
the wet process. As shown in FIG. 8C, the via hole 322 is filled
with the conductive material to form the via portion 323 by the
electroless plating ready for high aspect ratio and then by the
electrolytic plating ready for high aspect ratio. Then, the copper
films 320 are formed over the surfaces.
[0091] For example, the via portion 323 can be formed in the
following manner. After the thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the electrolytic plating. Usually palladium
is used as the electroless plating catalyst. In order to cause the
electroless plating catalyst to adhere to the flexible dielectric
resin, palladium is contained in an aqueous solution while being in
the complex state, and the flexible dielectric base material is
dipped to cause the palladium complex to adhere to the surface of
the dielectric base material. In the state of things, the nuclei
for starting the plating onto the surface of the flexible
dielectric base material can be formed by reducing the palladium
complex to the metal palladium with the reducing agent.
[0092] Then, as shown in FIG. 9A, the photo-etching resist layers
316 are laminated onto the top surfaces of the upper and lower
copper films 320. As shown in FIG. 9B, after the patterning is
performed to the photo-etching resist layer 316 by the exposure
with glass as the mask, wiring 324 made of copper is formed by
etching the copper film 320 using the photo-etching resist layer
316 as the mask. For example, the wiring pattern can be formed by
spraying the point exposed from the resist with the chemical
etching solution to remove the unnecessary copper foil.
[0093] As shown in FIG. 10A, the photoimageable solder resist
layers 328 are laminated onto the top surfaces of the upper and
lower wiring 324. At this point, it is preferable that the
thickness of the photoimageable solder resist layer 328 is not more
than about 30 .mu.m, and it is e.g. more preferable that thickness
of the photoimageable solder resist layer 328 is about 25 .mu.m.
With reference to the laminating conditions, for example, the
temperature is set to 110.degree. C., the time is set in the range
from 1 to 2 minutes, and the pressure is set to about 2
atmospheres. Then, the photoimageable solder resist layer 328 is
partially cured by an after-baking process.
[0094] The cardo type polymers contained resin film later-described
is used as the photoimageable solder resist layer 328.
[0095] Then, as shown in FIG. 10B, after the patterning is
performed to the photoimageable solder resist layer 328 by the
exposure with the glass as the mask, the via hole 326 having the
diameter of about 100 nm is formed by the chemical etching process
using chemicals so that the via portion 323 formed inside the via
hole. 322 is exposed. Then, gold plating is performed to the
exposed via portion 323 (not shown).
[0096] The effect that the cardo type polymer contained resin film
is used for the photoimageable solder resist layer 328 in the first
embodiment will be described below.
[0097] The cardo type polymer is a general term for the polymer
having the structure in which a cyclic group is directly bonded to
the polymer main chain as shown in Chemical Formula I. Where
R.sub.1, and R.sub.2 express bivalent groups such as an alkylene
group and a group containing an aromatic ring.
[0098] [Chemical Formula I] 1
[0099] Namely, the cardo type polymer shall mean the polymer having
the structure in which the bulky substituent group containing a
quaternary carbon atom is substantially perpendicular to the main
chain.
[0100] It is possible that cyclic portion includes either a
saturated bond or an unsaturated bond. In addition to the carbon
atom, it is possible that cyclic portion includes atoms such as a
nitrogen atom, an oxygen atom, a sulfur atom, and a phosphorus
atom. It is possible that the cyclic portion is formed in a
polycycle or a fused ring. It is possible that the cyclic portion
is bonded to other carbon chains and further cross-linked.
[0101] As shown in Chemical Formula I, the cyclic group such as a
fluorenyl group which includes the fused ring having the structure,
in which six-membered rings are bonded to both sides of a
five-membered ring and the remaining one carbon atom of the
five-membered ring is bonded to the main chain, can be cited as an
example of the bulky substituent group.
[0102] As shown in Chemical Formula II, the fluorenyl group is one
in which the 9-position carbon atom of fluolene is dehydrogenized.
In the cardo type polymer, as shown in Chemical Formula I, the
fluorenyl group is bonded to the carbon atom of the alkyl group
which is of the main chain at the position of the dehydrogenized
carbon atom.
[0103] [Chemical Formula II] 2
[0104] Since the cardo type polymer is one which has the above
structure, the cardo type polymer has the following effects:
[0105] (1) Rotation constraint of polymer main chain.
[0106] (2) Conformation control of main chain and side chain.
[0107] (3) Packing obstruction between molecules.
[0108] (4) Increase in aromaticity by introducing aromatic
substituent group to side chain.
[0109] Accordingly, the cardo type polymer has the advantages such
as the high mechanical strength, high heat-resistant properties,
solvent solubility, high transparency, high refractive index, low
birefringence, and higher gas permeability.
[0110] The cardo type polymer contained resin film used for the
photoimageable solder resist layer 328 can be formed in the thin
film while voids and unevenness are prevented from producing by
using a predetermined additive. Therefore, the film having the
thickness of about 25 .mu.m can be used as the photoimageable
solder resist layer 328. The thickness of the film becomes about
two-thirds, when compared with the conventional resin material
having the thickness of about 35 .mu.m, which is used for the
photoimageable solder resist layer. Accordingly, the device
mounting board 400 of the first embodiment can be miniaturized by
using the cardo type polymer contained resin film as the
photoimageable solder resist layer 328. Further, since the film
having the thickness of about 25 .mu.m can be used as the
photoimageable solder resist layer 328 by using the cardo type
polymer contained resin film as the photoimageable solder resist
layer 328, the thickness of the photoimageable solder resist layer
328 can be thinned when compared with the dielectric resin film 312
having the thickness of about 40 .mu.m.
[0111] As mentioned later, the cardo type polymer contained resin
film has the excellent moisture resistance and adhesion properties.
Therefore, the adhesion properties between the device mounted on
the surface of the device mounting board 400 and other layers can
be improved by using the cardo type polymer as the photoimageable
solder resist layer 328.
[0112] As mentioned later, the cardo type polymer contained resin
film has the excellent resolution. Since the thickness of the film
used in the first embodiment becomes about two-thirds when compared
with the conventional resin material used in the photoimageable
solder resist layer, the photoimageable solder resist layer 328 in
which the cardo type polymer contained resin film has the further
excellent resolution, which allows dimensional accuracy to be
improved in making the via hole 326. Therefore, the reliability can
be improved in the device mounting board 400.
[0113] As mentioned later, the cardo type polymer contained resin
film has the excellent dielectric characteristics. Therefore, the
parasitic capacitance between pieces of wiring embedded in the
photoimageable solder resist layer 328 by using the cardo type
polymer contained resin film as the photoimageable solder resist
layer 328, which allows the reliability to be improved in the
device mounting board 400.
[0114] Because the cardo type polymer contained resin film has the
high mechanical strength, even if the thickness of the
photoimageable solder resist layer 328 is thinned to about
two-thirds of the conventional resin material, the mechanical
strength can be kept and the warp of the whole of device mounting
board 400 can be suppressed. Accordingly, bonding accuracy of the
device mounted on the device mounting board 400 can be
improved.
[0115] A spin coating method usually used for forming the
photoimageable solder resist layer still has room for improvement
in that the voids are easily produced in outer periphery of the
photoimageable solder resist layer. A potting method still has room
for improvement in that the voids are easily produced after
application because an adhesive is in a liquid state before
bonding. On the contrary, in the photoimageable solder resist layer
328 of the first embodiment, because the voids and the unevenness
are suppressed to occur during the compression-bonding of the film,
the voids and the unevenness are hardly produced in the
photoimageable solder resist layer 328 of the device mounting board
400 to which the film is compression-bonded. Therefore, the
reliability and production stability of the device mounting board
400 can be improved.
[0116] It is also possible that the cardo type polymer is one which
is formed of the cross-linked polymer having the carboxylic group
and the acrylate group in the same molecular chain. Conventionally,
a blend of a carboxyl group oligomer having development properties
and a polyfunctional acryl is used as the general photosensitive
varnish. However, the general photosensitive varnish still has room
for improvement in the resolution. When the cardo type polymer
formed of the cross-linked polymer having the carboxyl group and
the acrylate group in the same molecular chain is used instead of
the general photosensitive varnish, the cardo type polymer has the
carboxyl group having the development properties and the acrylate
group which is of the crosslinking group in the same molecular
chain, and the cardo type polymer also has the bulky substituent
group in the main chain, so that the radical diffusion is difficult
to occur. Therefore, in the cardo type polymer contained
photoimageable solder resist film, there is the advantage that the
resolution is improved.
[0117] It is desirable that the cardo type polymer contained resin
film satisfies the following physical properties. The following
physical properties are the value for the resin portion which does
not include the filler and the like, and the physical properties
can be appropriately adjusted by adding the filler and the
like.
[0118] In the cardo type polymer contained resin film, it is
preferable that the glass transition temperature (Tg) is e.g. not
lower than 180.degree. C., and it is more preferable that Tg is not
lower than 190.degree. C. When Tg exists in the above range, the
heat-resistant properties are improved in the cardo type polymer
contained resin film.
[0119] In the cardo type polymer contained resin film, it is
preferable that Tg is e.g. not more than 220.degree. C., it is more
preferable that Tg is not more than 210.degree. C. When Tg exists
in the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. Tg can be
measured by dynamic viscoelasticity measurement (DMA).
[0120] In the range of not more than Tg of the cardo type polymer
contained resin film, it is preferable that the linear expansion
coefficient (CTE) of the cardo type polymer contained resin film is
e.g. not more than 80 ppm/.degree. C., and it is more preferable
that CTE is not more than 75 ppm/.degree. C. When CTE exists in the
above range, the adhesion properties between the cardo type polymer
contained resin film and other members are improved.
[0121] In the range of not more than Tg of the cardo type polymer
contained resin film, it is preferable that CTE of the cardo type
polymer contained resin film is e.g. not lower than 50 ppm/.degree.
C., and it is more preferable that CTE is not lower than 55
ppm/.degree. C. Further, the resin composition having CTE of not
more than 20 ppm/.degree. C. can be obtained by mixing the filler
in the cardo type polymer contained resin film. When CTE exists in
the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. CTE can be
measured according to the thermal expression measurement by a
thermo-mechanical analysis apparatus (TMA).
[0122] It is preferable that heat conductivity of the cardo type
polymer contained resin film is e.g. not more than 0.50
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not more than 0.35 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the heat-resistant
properties are improved in the cardo type polymer contained resin
film.
[0123] It is preferable that the heat conductivity of the cardo
type polymer contained resin film is e.g. not lower than 0.10
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not lower than 0.25 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the cardo type
polymer contained resin film can stably be produced by the usual
manufacturing method. For example, the heat conductivity can be
measured by a disk heat flow meter method (ASTM E1530).
[0124] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that a via aspect ratio is e.g. not lower than 0.5, and
it is more preferable that the via aspect ratio is not lower than
1. When the via aspect ratio exists in the above range, the
resolution is improved in the cardo type polymer contained resin
film.
[0125] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that the via aspect ratio is e.g. not more than 5, and
it is more preferable that the via aspect ratio is not more than 2.
When the via aspect ratio exists in the above range, the cardo type
polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0126] In the case where an alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric constant of the
cardo type polymer contained resin film is e.g. not more than 4,
and it is more preferable that the dielectric constant is not more
than 3. When the dielectric constant exists in the above range,
dielectric characteristics such as high-frequency characteristics
are improved in the cardo type polymer contained resin film.
[0127] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is possible that the dielectric constant is e.g. not
lower than 0.1, and it is more preferable that the dielectric
constant is not lower than 2.7. When the dielectric constant exists
in the above range, the cardo type polymer contained resin film can
stably be produced by the conventional manufacturing method.
[0128] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that a dielectric dissipation factor
is e.g. not more than 0.04, and it is more preferable that the
dielectric dissipation factor is not more than 0.029. When the
dielectric dissipation factor exists in the above range, the
dielectric characteristics such as the high-frequency
characteristics are improved in the cardo type polymer contained
resin film.
[0129] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric dissipation factor
is e.g. not lower than 0.001, and it is more preferable that the
dielectric dissipation factor is not lower than 0.027. When the
dielectric dissipation factor exists in the above range, the cardo
type polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0130] In the cardo type polymer contained resin film, it is
preferable that 24-hour water absorption (wt %) is e.g. not more
than 3 wt %, and it is more preferable that the 24-hour water
absorption (wt %) is not more than 1.5 wt %. When the 24-hour water
absorption exists in the above range, moisture resistance can be
improved in the cardo type polymer contained resin film.
[0131] In the cardo type polymer contained resin film, it is
preferable that 24-hour water absorption (wt %) is e.g. not lower
than 0.5 wt %, and it is more preferable that the 24-hour water
absorption (wt %) is not lower than 1.3 wt %. When the 24-hour
water absorption exists in the above range, the cardo type polymer
contained resin film can stably be produced by the conventional
manufacturing method.
[0132] The characteristics such as the thinning of film, the
mechanical strength, the heat-resistant properties, the adhesion
properties to other members, the resolution, the dielectric
characteristics, and the moisture resistance are required for the
photoimageable solder resist layer 328 for which the cardo type
polymer contained resin film is used. The characteristics required
for the photoimageable solder resist layer 328 are realized in a
well-balanced manner, when the cardo type polymer contained resin
film satisfies the above physical properties.
[0133] Second Embodiment
[0134] FIG. 11 is a sectional view schematically showing various
methods of mounting the semiconductor device on the device mounting
board 400 including a four-layer ISB structure according to a
second embodiment.
[0135] In the second embodiment, the cardo type polymer contained
resin film is equal to the cardo type polymer contained resin film
described in the first embodiment.
[0136] There are various modes in the semiconductor apparatus which
is formed by mounting the semiconductor device on the device
mounting board 400 described in the first embodiment. For example,
there is the mode in which the semiconductor device is mounted on
the device mounting board 400 by the flip chip connection or the
wire bonding connection. There is the mode in which the
semiconductor device is mounted on the device mounting board 400 by
taking a face up structure or a face down structure. There is the
mode in which the semiconductor device is mounted on one side or
both sides of the device mounting board 400 . Further, there is the
mode in which these various modes are combined.
[0137] Specifically, as shown in FIG. 11A, a semiconductor device
500 such as LSI can be mounted on a device mounting board 400 of
the first embodiment in the flip chip form. At this point,
electrode pads 402a and 402b on the device mounting board 400 are
directly connected to electrode pads 502a and 502b of the
semiconductor device 500 respectively.
[0138] As shown in FIG. 11B, the semiconductor device 500 such as
LSI can be mounted on the device mounting board 400 by taking the
face up structure. At this point, the electrode pads 402a and 402b
located on the top of the device mounting board 400 are connected
to the electrode pads 502a and 502b located on the top of the
semiconductor device 500 by the wire bonding connection
respectively.
[0139] As shown in FIG. 11C, the semiconductor device 500 such as
LSI can be mounted on the device mounting board 400 in the flip
chip form, and a semiconductor device 600 such as IC can be mounted
beneath the device mounting board 400 in the flip chip form. At
this point, the electrode pads 402a and 402b located on the top of
the device mounting board 400 are directly connected to the
electrode pads 502a and 502b of the semiconductor device 500
respectively. Further, the electrode pads 404a and 404b located on
the lower surface of the device mounting board 400 are directly
connected to electrode pads 602a and 602b of the semiconductor
device 600 respectively.
[0140] As shown in FIG. 11D, the semiconductor device 500 such as
LSI can be mounted on the device mounting board 400 by taking the
face up structure, and the device mounting board 400 can be mounted
on a printed board 700. At this point, the electrode pads 402a and
402b located on the top of the device mounting board 400 are
connected to the electrode pads 502a and 502b located on the top of
the semiconductor device 500 through gold wires 504a and 504b by
wire bonding connection respectively. Further, the electrode pads
404a and 404b located on the lower surface of the device mounting
board 400 are directly connected to electrode pads 702a and 702b
located on the top of the printed board 700 respectively.
[0141] As described in the first embodiment, the device mounting
board 400 in which the cardo type polymer contained resin film is
used as the photoimageable solder resist layer 328 is used in the
semiconductor apparatus formed by any structure described above.
The cardo type polymer contained resin film is excellent in the
characteristics such as the moisture resistance, the adhesion
properties, the dielectric characteristics, and the resolution.
Therefore, the cardo type polymer contained resin film is excellent
in the adhesion properties to the dielectric resin film 312 which
is in contact with the photoimageable solder resist layer 328, the
dimensional accuracy can be improved when the via hole is made in
the photoimageable solder resist layer 328, and the parasitic
capacitance can be decreased. Further, because the film, which has
the high mechanical strength even if the film is thinned, is used
for the photoimageable solder resist layer 328, the warp of the
whole of device mounting board 400 can be suppressed, which
improves the accuracy when the device is mounted on the device
mounting board 400. Accordingly, mounting the device on the device
mounting board 400 can provide the miniaturized semiconductor
apparatus having the high reliability.
[0142] The invention is not limited to the second embodiment, and
it is understood that those skilled in the art could modify the
second embodiment without departing from the scope of the
invention.
[0143] For example, in addition to the photoimageable solder resist
layer 328, it is possible that the cardo type polymer contained
resin film is used for the base material 302 or the dielectric
resin film 312.
[0144] When the cardo type polymer contained resin film is used as
the base material 302 in addition to the photoimageable solder
resist layer 328, the following effects can be obtained.
[0145] The cardo type polymer contained resin film used for the
base material 302 can be formed into the thin film while the voids
and the unevenness are suppressed to occur by using the
predetermined additive. Therefore, the film having the thickness of
about 40 .mu.m can be used as the base material 302. The thickness
of the film becomes about two-thirds, when compared with the
conventional resin material having the thickness of about 60 .mu.m,
which is used for the base material. Accordingly, the device
mounting board 400 of the first embodiment can further be
miniaturized while the reliability is further improved by using the
cardo type polymer contained resin film as the base material 302 in
addition to the photoimageable solder resist layer 328. Further,
the reliability is further improved by mounting the semiconductor
device on the device mounting board 400, which allows the further
miniaturized semiconductor apparatus to be provided.
[0146] When the cardo type polymer contained resin film is used as
the dielectric resin film 312 in addition to the photoimageable
solder resist layer 328, the following effects can be obtained.
[0147] The cardo type polymer contained resin film used for the
dielectric resin film 312 can be formed in the thin film while the
voids and the unevenness are suppressed to occur by using the
predetermined additive. Therefore, the film having the thickness of
about 25 .mu.m can be used as the dielectric resin film 312. The
thickness of the film becomes about two-thirds, when compared with
the conventional resin material having the thickness of about 40
.mu.m, which is used for the conventional dielectric resin film.
Accordingly, the device mounting board 400 can further be
miniaturized by using the cardo type polymer contained resin film
as the dielectric resin film 312 in addition to the photoimageable
solder resist layer 328. As described above, since the cardo type
polymer contained resin film is excellent in the adhesion
properties, the heat-resistant properties, the dielectric
characteristics, and the like, interlayer adhesion properties are
improved in the dielectric resin film 312, which decreases the
parasitic capacitance. Therefore, the reliability can be improved
in the device mounting board 400. Further, since the voids and the
unevenness are suppressed to occur during the compression-bonding
of the film, the voids and the unevenness are hardly produced in
the dielectric resin film 312 of the device mounting board 400 to
which the film is compression-bonded. Therefore, the device
mounting board 400 can further be miniaturized while the
reliability is improved by using the cardo type polymer contained
resin film as the dielectric resin film 312 in addition to the
photoimageable solder resist layer 328. Further, the reliability
and the production stability are remarkably improved by mounting
the semiconductor device on the device mounting board 400, which
allows the further miniaturized semiconductor apparatus to be
provided.
[0148] In addition to the photoimageable solder resist layer 328,
it is possible that the cardo type polymer contained resin film is
used for the base material 302 and the dielectric resin film
312.
[0149] The cardo type polymer contained resin film is excellent in
the characteristics such as the heat resistant properties, the
mechanical strength, the adhesion properties, the moisture
resistance properties, the dielectric characteristics, and the
resolution, and the cardo type polymer contained resin film can be
formed in the thin film. Therefore, the base material 302, the
dielectric resin film 312, and the photoimageable solder resist
layer 328 are excellent in the characteristics such as the
rigidity, the heat-resistant properties, the interlayer adhesion
properties, the parasitic capacitance, the dimensional accuracy in
mounting the device, and flatness. As a result, by using the cardo
type polymer contained resin film as the base material 302 and the
dielectric resin film 312 in addition to the photoimageable solder
resist layer 328, the reliability and the production stability of
the device mounting board 400 can remarkably be improved, and the
device mounting board 400 can further be miniaturized. Further, the
reliability and the production stability are remarkably improved by
mounting the semiconductor device on the device mounting board 400,
which allows the further miniaturized semiconductor apparatus to be
provided.
[0150] In the second embodiment, the cardo type polymer contained
resin film is used as the photoimageable solder resist layer 328
constituting the device mounting board 400 including the four-layer
ISB structure. Further, it is possible that the cardo type polymer
contained resin film is used as the photoimageable solder resist
layer of the device mounting board including the ISB structure
which includes at least four wiring layers, e.g. six wiring layers.
It is also possible that the cardo type polymer contained resin
film is used for the photoimageable solder resist layer of other
semiconductor packages.
[0151] Third Embodiment
[0152] In an aspect of a third embodiment, a device mounting board
on which a device is mounted, the device mounting board includes a
base material and a dielectric film which is provided on the base
material, wherein the base material contains a cardo type
polymer.
[0153] According to the third embodiment, the base material
contains the cardo type polymer, which allows the base material to
be thinned while the rigidity is maintained. Therefore, the
miniaturized device mounting board having the high reliability can
be provided.
[0154] In another aspect of the third embodiment, a device mounting
board on which a device is mounted, the device mounting board
includes a base material and a dielectric film which is provided on
the base material, wherein the dielectric film contains a cardo
type polymer.
[0155] According to the third embodiment, when the dielectric film
contains the cardo type polymer, the interlayer adhesion properties
between the dielectric film and the layers adjacent to the
dielectric film are improved, and the parasitic capacitance between
the pieces of wiring is decreased, so that the reliability can be
improved. Further, the thickness reduction can also be performed on
the dielectric film. Therefore, the miniaturized device mounting
board having high reliability can be provided.
[0156] It is possible that glass transition temperature of the base
material ranges from 180.degree. C. to 220.degree. C. In the case
where the alternating electric field having the frequency of 1 MHz
is applied to the base material, it is possible that the dielectric
dissipation factor of the base material ranges from 0.001 to
0.04.
[0157] In the range not more than the glass transition temperature
of the base material, it is possible that the linear expansion
coefficient of the base material ranges from 50 ppm/.degree. C. to
80 ppm/.degree. C.
[0158] It is possible that glass transition temperature of the
dielectric film ranges from 180.degree. C. to 220.degree. C. In the
case where the alternating electric field having the frequency of 1
MHz is applied to the dielectric film, it is possible that the
dielectric dissipation factor of the dielectric film ranges from
0.001 to 0.04.
[0159] In the range not more than the glass transition temperature
of the dielectric film, it is possible that the linear expansion
coefficient of the dielectric film ranges from 50 ppm/.degree. C.
to 80 ppm/.degree. C.
[0160] It is possible that the wiring for connecting the devices is
provided on the dielectric film.
[0161] It is possible that a second dielectric film is provided on
the dielectric film and the wiring is covered with the second
dielectric film.
[0162] It is possible that the second dielectric film contains the
cardo type polymer.
[0163] It is possible that the glass transition temperature of the
second dielectric film ranges from 180.degree. C. to 220.degree. C.
In the case where the alternating electric field having the
frequency of 1 MHz is applied to the second dielectric film, it is
possible that the dielectric dissipation factor of the second
dielectric film ranges from 0.001 to 0.04.
[0164] In the range not more than the glass transition temperature
of the second dielectric film, it is possible that the linear
expansion coefficient of the second dielectric film ranges from 50
ppm/.degree. C. to 80 ppm/.degree. C.
[0165] According to the third embodiment, the semiconductor
apparatus which includes any one of the above device mounting
boards and the semiconductor device mounted on the device mounting
board is provided.
[0166] According to the third embodiment, the miniaturized
semiconductor apparatus having the high reliability can be provided
by including the miniaturized device mounting board having the high
reliability.
[0167] It is possible that the dielectric film is formed by either
the single-layer structure or the multi-layer structure.
[0168] In the third embodiment, the device mounting board shall
mean the board on which the semiconductor device such as the LSI
chip and the IC chip is mounted. The interposer board in the
later-mentioned ISB (registered trademark) structure can be cited
as an example of the device mounting board. It is possible that the
device mounting board includes the core board such as a silicon
substrate having the rigidity, or it is possible that the device
mounting board does not includes the core board but has the
core-less structure including the multi-layer dielectric film
formed by the dielectric resin films.
EXAMPLE 1
[0169] FIG. 20B is a sectional view showing the device mounting
board 1400 including the four-layer ISB structure according to
Example 1.
[0170] The device mounting board 1400 has the structure in which an
dielectric resin film 1312 and a photoimageable solder resist layer
1328 are sequentially laminated on the upper surface of a base
material 1302. The device mounting board also has the structure in
which the dielectric resin film 1312 and the photoimageable solder
resist layer 1328 are sequentially laminated on the lower surface
of the base material 1302.
[0171] The four-layer ISB structure shall mean the structure which
has the four wiring layers. The wiring layers are embedded in the
dielectric resin film 1312 and the photoimageable solder resist
layer 1328. For convenience of the process of making the via hole
in the photoimageable solder resist layer 1328, it is necessary
that the photoimageable solder resist layer 1328 has the
photosensitivity.
[0172] In the four-layer ISB structure, the same materials forming
the upper and lower surfaces of the dielectric resin layers 1312
can be used while sandwiching the base material 1302. Further, the
same materials forming the upper and lower surfaces of the
photoimageable solder resist layers 1328 can be used while
sandwiching the base material 1302. Therefore, from the viewpoint
of process, there is the advantage that the manufacturing process
can be simplified.
[0173] A through-hole 1327 which pierces through the base material
1302, the dielectric resin film 1312, and the photoimageable solder
resist layer 1328 is made.
[0174] A part of the piece of wiring made of a copper film 1308, a
part of the piece of wiring made of a copper film 1320, a part of a
via portion 1311, and the like are embedded in the base material
1302. A part of the piece of the wiring made of the copper film
1308, a part of the piece of the wiring made of the copper film
1320, wiring 1309, a part of the via portion 1311, a part of a via
portion 1323, and the like are embedded in the dielectric resin
film 1312. A part of the piece of the wiring made of the copper
film 1320, a part of the via portion 1323, and the like are
embedded in the photoimageable solder resist layer 1328. An opening
1326 is provided in the photoimageable solder resist layer
1328.
[0175] The cardo type polymer contained resin film is used as the
base material 1302. For example, the thickness of the base material
1302 is set to about 40 .mu.m.
[0176] The resin material used for the dielectric resin film 1312
is one which is softened by the heating, and the cardo type polymer
contained resin film later-described is used as the dielectric
resin film 1312. It is possible that the dielectric resin film 1312
contains the filling material such as the filler and the fiber. For
example, the granular or fibrous SiO.sub.2 or SiN can be used as
the filler. For example, the thickness of the dielectric resin film
1312 is set to about 25 .mu.m.
[0177] It is possible that the later-described cardo type polymer
contained resin film and the like are used as the photoimageable
solder resist layer 1328.
[0178] In the cardo type polymer, the bulky substituent group
obstructs the movement of the main chain, which results in the
excellent mechanical strength, the excellent heat-resistant
properties, and the low linear expansion coefficient. Therefore, in
the heat cycle, the decrease in adhesion properties, the
delamination or the like is suppressed among the base material
1302, the dielectric resin film 1312, and the photoimageable solder
resist layer 1328 by using the cardo type polymer contained resin
film for the base material 1302, the dielectric resin film 1312 and
the photoimageable solder resist layer 1328. As a result, the
reliability is improved in the device mounting board 1400 according
to Example 1. Further, the cardo type polymer contained resin film
which can be formed into the thin film is used as the base material
1302, the dielectric resin film 1312, and the photoimageable solder
resist layer 1328, thereby the miniaturization can be realized in
the device mounting board 1400 according to Example 1.
[0179] The multilayer wiring structure including the wiring formed
of copper film 1308, the wiring formed of the copper film 1320, the
wiring 1309, the via portion 1311 and the via portion 1323 is not
limited to the copper wiring. For example, the aluminum wiring, the
aluminum alloy wiring, the copper alloy wiring, the wire-bonded
gold wiring, the gold alloy wiring, the wiring formed of these
pieces of wiring, and the like can also be used as the multilayer
wiring structure.
[0180] It is also possible that active elements such as the
transistor and the diode and passive elements such as the capacitor
and the resistor are provided on the surface of or in the
four-layer ISB structure. It is also possible that the active
elements or the passive elements are connected to the multilayer
wiring structure in the four-layer ISB and connected to the
external conductive member through the via portion 1323.
[0181] FIGS. 13A to 20B are a process sectional view showing the
device mounting board 1400 which includes the four-layer ISB
structure according to Example 1.
[0182] As shown in FIG. 13A, the base material 1302 is prepared.
The copper foils 1304 are compression-bonded to the base material
1302. The holes having diameters of about 150 .mu.m are made by a
drill in the copper foil 1304. At this point, the thickness of the
base material 1302 is set to about 40 .mu.m, and the thickness of
the copper foil 1304 ranges from about 10 .mu.m to about 15
.mu.m.
[0183] The cardo type polymer contained resin film later-described
is used as the base material 1302.
[0184] As shown in FIG. 13B, a photo-etching resist layer 1306 is
laminated on the upper surface of the copper foil 1304.
[0185] Then, the patterning is performed to the photo-etching
resist layer 1306 by the exposure with the glass as the mask. As
shown in FIGS. 14A and 14B, via holes 1307 having the diameters of
about 100 nm are made by the chemical etching process using
chemicals while using the photo-etching resist layer 1306 as the
mask. Then, the inside of the via hole 1307 is roughened and
cleaned by the wet process. As shown in FIG. 14C, the via hole 1307
is filled with the conductive material to form the via portion 1311
by the electroless plating ready for high aspect ratio and then by
the electrolytic plating ready for high aspect ratio. Then, the
copper films 1308 are formed over the surfaces.
[0186] For example, the via portion 1311 can be formed in the
following manner. After the thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the electrolytic plating. Usually palladium
is used as the electroless plating catalyst. In order to cause the
electroless plating catalyst to adhere to the flexible dielectric
resin, palladium is contained in the aqueous solution while being
in the complex state, and the flexible dielectric base material is
dipped to cause the palladium complex to adhere to the surface of
the dielectric base material. In the state of things, the nuclei
for starting the plating onto the surface of the flexible
dielectric base material can be formed by reducing the palladium
complex to the metal palladium with the reducing agent.
[0187] As shown in FIG. 15A, photo-etching resist layers 1310 are
laminated onto the top surfaces of the upper and lower copper films
1308. Then, as shown in FIG. 15B, the patterning is performed on
the photo-etching resist layer 1310 by performing the exposure with
glass as the mask, and the wiring 1309 made of copper is formed by
etching the copper film 1308 formed of the copper plating layer
using the photo-etching resist layer 1310 as the mask. For example,
the unnecessary copper plating is removed to form the wiring
pattern by spraying the point exposed from the resist with the
chemical etching solution.
[0188] As shown in FIG. 16A, the dielectric resin films 1312 with
copper foils 1314 are compression-bonded to the top surfaces of the
upper wiring 1309 and the lower wiring 1309. For example, the
thickness of the dielectric resin film 1312 is set to e.g. about 25
.mu.m, and the thickness of the copper foil 1314 ranges e.g. from
about 10 .mu.m to about 15 .mu.m.
[0189] The dielectric resin film 1312 is one of resin materials
which is softened by the heating, and the later-described cardo
type polymer contained resin film is used as the resin material. It
is possible that the dielectric resin film 312 contains the filling
material such as the filler and the fiber. For example, the
granular or fibrous SiO.sub.2 or SiN can be used as the filler.
[0190] In the compression-bonding method; the dielectric resin film
1312 with copper foil is caused to come into contact with the base
material 1302 and the wiring 1309, and the base material 1302 and
the wiring 1309 are fitted into the dielectric resin film 1312.
Then, as shown in FIG. 16B, the dielectric resin film 1312 is
heated in the vacuum or under the reduced pressure to
compression-bond the dielectric resin film 1312 to the base
material 1302 and the wiring 1309. Then, as shown in FIG. 16C, the
copper foil 1314 is irradiated with the X-ray to make holes 1315
which pierce through the copper foil 1314, the dielectric resin
film 1312, the wiring 1309, and the base material 1302.
[0191] As shown in FIG. 17A, photo-etching resist layers 1316 are
laminated on the top surfaces of the upper and lower copper foils
314. As shown in FIG. 17B, the patterning is performed on the
photo-etching resist layer 1316 by the exposure with the glass as
the mask, and wiring 1319 made of copper is formed by etching the
copper foil 1314 with the photo-etching resist layer 1316 as the
mask. For example, the wiring pattern can be formed by spraying the
point exposed from the resist with the chemical etching solution to
remove the unnecessary copper foil.
[0192] As shown in FIG. 18A, photo-etching resist layers 1317 are
laminated onto the surfaces of the upper wiring 1319 and the lower
wiring 1319. As shown in FIG. 18B, after the patterning is
performed on the photo-etching resist layer 1317 by the exposure
with the glass as the mask, via holes 1322 having the diameters of
about 100 nm are made by the chemical etching with chemicals using
the photo-etching resist layer 1317 as the mask. Then, the inside
of the via hole 1322 is roughened and cleaned by the wet process.
As shown in FIG. 18C, the via hole 1322 is filled with the
conductive material by the electroless plating ready for high
aspect ratio and then by the electrolytic plating ready for high
aspect ratio to form a via portion 1323. Then, copper films 1320
are formed over the surfaces.
[0193] For example, the via portion 1323 can be formed in the
following manner. After the thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the electrolytic plating. Usually palladium
is used as the electroless plating catalyst. In order to cause the
electroless plating catalyst to adhere to the flexible dielectric
resin, palladium is contained in an aqueous solution while being in
the complex state, and the flexible dielectric base material is
dipped to cause the palladium complex to adhere to the surface of
the dielectric base material. In the state of things, the nuclei
for starting the plating onto the surface of the flexible
dielectric base material can be formed by reducing the palladium
complex to the metal palladium with the reducing agent.
[0194] As shown in FIG. 19A, photo-etching resist layers 1316 are
laminated onto the top surfaces of the upper and lower copper films
1320. As shown in FIG. 19B, the patterning is performed by the
exposure with glass as the mask, and wiring 1324 made of copper is
formed by etching the copper film 1320 using the photo-etching
resist layer 1316 as the mask. For example, the wiring pattern can
be formed by spraying the point exposed from the resist with the
chemical etching solution to remove the unnecessary copper
foil.
[0195] As shown in FIG. 20A, the photoimageable solder resist
layers 1328 are laminated onto the top surfaces of the upper wiring
1324 and the lower wiring 1324. For example, the thickness of the
photoimageable solder resist layer 1328 is set to e.g. about 25
.mu.m. With reference to the laminating conditions, for example,
the temperature is set to 110.degree. C., the time is set in the
range from 1 to 2 minutes, and the pressure is set to about 2
atmospheres. Then, the photoimageable solder resist layer 1328 is
partially cured by the after-baking process.
[0196] For example, it is possible that the cardo type polymer
contained resin film and the like are used as the photoimageable
solder resist layer 1328.
[0197] As shown in FIG. 20B, after the patterning is performed by
the exposure with the glass as the mask, the via hole 1326 having
the diameter of about 100 nm is formed by the chemical etching
process using chemicals so that the via portion 1323 formed inside
the via hole 1322 is exposed. In Example, 1, for example, the
chemical etching process using chemicals is used for the method of
forming the via hole 1326. Then, gold plating is performed on the
exposed via portion 323 (not shown).
[0198] The effect that the cardo type polymer contained resin film
is used for the base material 1302, the dielectric resin film 1312,
and the photoimageable solder resist layer 1328 in Example 1 will
be described below.
[0199] The cardo type polymer is a general term for the polymer
having the structure in which a cyclic group is directly bonded to
the polymer main chain as shown in Chemical Formula III. Where
R.sub.1 and R.sub.2 express the bivalent groups such as the
alkylene group and the group containing the aromatic ring.
[0200] [Chemical Formula III] 3
[0201] Namely, the cardo type polymer shall mean the polymer having
the structure in which the bulky substituent group containing the
quaternary carbon atom is substantially perpendicular to the main
chain.
[0202] It is possible that cyclic portion includes either the
saturated bond or the unsaturated bond. In addition to the carbon
atom, it is possible that cyclic portion includes atoms such as the
nitrogen atom, the oxygen atom, the sulfur atom, and the phosphorus
atom. It is possible that the cyclic portion is formed in the
polycycle or the fused ring. It is possible that the cyclic portion
is bonded to other carbon chains. Further, it is possible that the
cross-linkage is formed on the cyclic portion.
[0203] As shown in Chemical Formula III, the cyclic group such as
the fluorenyl group which includes the fused ring having the
structure, in which the six-membered rings are bonded to both sides
of the five-membered ring and the remaining one carbon atom of the
five-membered ring is bonded to the main chain, can be cited as an
example of the bulky substituent group.
[0204] As shown in Chemical Formula IV, the fluorenyl group is one
in which the 9-position carbon atom of fluolene is dehydrogenized.
In the cardo type polymer, as shown in Chemical Formula I, the
fluorenyl group is bonded to the carbon atom of the alkyl group
which is of the main chain at the position of the dehydrogenized
carbon atom.
[0205] [Chemical Formula IV] 4
[0206] Since the cardo type polymer is one which has the above
structure, the cardo type polymer has the following effects:
[0207] (1) Rotation constraint of polymer main chain.
[0208] (2) Conformation control of main chain and side chain.
[0209] (3) Packing obstruction between molecules.
[0210] (4) Increase in aromaticity by introducing aromatic
substituent group to side chain.
[0211] Accordingly, the cardo type polymer has the advantages such
as the high mechanical strength, high heat-resistant properties,
solvent solubility, high transparency, high refractive index, low
birefringence, and higher gas permeability.
[0212] The cardo type polymer contained resin film used for the
base material 1302 can be formed into the thin film while the voids
and the unevenness are suppressed to occur by using a predetermined
additive. Therefore, the film having the thickness of about 40
.mu.m can be used as the base material 1302. The thickness of the
film becomes about two-thirds, when compared with the conventional
resin material having the thickness of about 60 .mu.m, which is
used for the base material. Further, the cardo type polymer
contained resin film has the excellent adhesion properties and
heat-resistant properties as described later. Accordingly, the
device mounting board 1400 of Example 1 can be miniaturized while
the reliability is improved by using the cardo type polymer
contained resin film as the base material 1302.
[0213] In addition to the base material 1302, it is also possible
that the cardo type polymer contained resin film is used for the
photoimageable solder resist layer 1328. This allows the following
effects to be further obtained.
[0214] The cardo type polymer contained resin film used for the
photoimageable solder resist layer 1328 can be formed into the thin
film while the voids and the unevenness are suppressed to occur by
using the predetermined additive. Therefore, the film having the
thickness of about 25 .mu.m can be used as the photoimageable
solder resist layer 1328. The thickness of the film becomes about
two-thirds, when compared with the conventional resin material
having the thickness of about 35 .mu.m, which is used for the
photoimageable solder resist layer. Accordingly, the device
mounting board 1400 can further be miniaturized. Further, the cardo
type polymer contained resin film is excellent in the humidity
resistance properties and the resolution properties. Therefore, the
reliability can further be improved in the device mounting board
1400 by using the cardo type polymer contained resin film as the
photoimageable solder resist layer 1328 in addition to the base
material 1302. When compared with the spin coating method which has
room for the improvement in that the voids are easily produced in
outer periphery of the photoimageable solder resist layer or the
potting method which has room for the improvement in that the voids
are easily produced after application because an adhesive is in a
liquid state before bonding, since the voids and the unevenness are
suppressed to occur during the compression-bonding of the film, the
voids and the unevenness are hardly generated in the dielectric
resin film 1312 of the device mounting board 1400 to which the film
is compression-bonded. Therefore, the reliability and production
stability of the device mounting board 1400 can further be
improved.
[0215] The cardo type polymer contained resin film used for the
dielectric resin film 1312 can be formed into the thin film while
the voids and the unevenness are suppressed to occur by using the
predetermined addition agent. Therefore, the film having the
thickness of about 25 .mu.m can be used as the dielectric resin
film 1312. The thickness of the film becomes about two-thirds, when
compared with the conventional resin material having the thickness
of about 40 .mu.m, which is used for the dielectric resin film.
Accordingly, the device mounting board 1400 can be miniaturized by
using the cardo type polymer contained resin film as the dielectric
resin film 1312. Further, the cardo type polymer contained resin
film is excellent in the adhesion properties, dielectric
characteristics, and the heat-resistant properties as described
later, so that the dielectric resin film 1312 is excellent in the
interlayer adhesion properties, the parasitic capacitance is
decreased in the dielectric resin film 1312, and the dielectric
resin film 1312 is excellent in the heat-resistant properties.
Since the voids and the unevenness are suppressed to occur during
the compression-bonding of the film, the voids and the unevenness
are hardly produced in the dielectric resin film 1312 of the device
mounting board 1400 to which the film is compression-bonded.
Therefore, the reliability and production stability of the device
mounting board 1400 can be improved.
[0216] In addition to the dielectric resin film 1312, it is also
possible that the cardo type polymer contained resin film is used
for the photoimageable solder resist layer 1328. This allows the
following effects to be further obtained.
[0217] The cardo type polymer contained resin film used for the
photoimageable solder resist layer 1328 can be formed into the thin
film while the voids and the unevenness are suppressed to occur by
using the predetermined additive. Therefore, the film having the
thickness of about 25 .mu.m can be used as the photoimageable
solder resist layer 1328. The thickness of the film becomes about
two-thirds, when compared with the conventional resin material
having the thickness of about 35 .mu.m, which is used for the
photoimageable solder resist layer. Accordingly, the device
mounting board 1400 can further be miniaturized. Further, the cardo
type polymer contained resin film is excellent in the adhesion
properties, the moisture resistance properties, the dielectric
characteristics, and the resolution properties. Therefore, the
adhesion properties between the photoimageable solder resist layer
1328 and the device mounted on the photoimageable solder resist
layer 1328 can be improved, the dimensional accuracy can be also
improved in making the via hole in the photoimageable solder resist
layer 1328, and the parasitic capacitance can be decreased.
Accordingly, the reliability can further be improved in the device
mounting board 1400 by using the cardo type polymer contained resin
film as the photoimageable solder resist layer 1328 in addition to
the dielectric resin film 1312. When compared with the spin coating
method which has room for the improvement in that the voids are
easily produced in outer periphery of the photoimageable solder
resist layer or the potting method which has room for the
improvement in that the voids are easily produced after application
because an adhesive is in a liquid state before bonding, since the
voids and the unevenness are suppressed to occur during the
compression-bonding of the film, the voids and the unevenness are
hardly produced in the photoimageable solder resist layer 1328 of
the device mounting board 1400 to which the film is
compression-bonded. Therefore, the reliability and production
stability of the device mounting board 1400 can further be
improved.
[0218] It is possible that the cardo type polymer contained resin
film is used for both the base material 1302 and the dielectric
resin film 1312. Therefore, the cardo type polymer contained resin
film is excellent in the characteristics such as the heat-resistant
properties, the adhesion properties, the moisture resistance
properties, the dielectric characteristics, and the resolution
properties, and the cardo type polymer contained resin film can be
formed into the thin film, so that the reliability and production
stability of the device mounting board 1400 can remarkably be
improved, and the further miniaturization can be realized.
[0219] It is possible that the cardo type polymer contained resin
film is used for all of the base material 1302, the dielectric
resin film 1312, and the photoimageable solder resist layer 1328.
Therefore, the cardo type polymer contained resin film is excellent
in the characteristics such as the heat-resistant properties, the
adhesion properties, the moisture resistance properties, the
dielectric characteristics, and the resolution properties as
described later, and the cardo type polymer contained resin film
can be formed into the thin film, so that the reliability and
production stability of the device mounting board 1400 can
remarkably be improved, and the further miniaturization can be
realized.
[0220] It is also possible that the cardo type polymer is one which
is formed of the cross-linked polymer having the carboxyl group and
the acrylate group in the same molecular chain. Conventionally, the
blend of the carboxyl group oligomer having development properties
and a polyfunctional acryl is used as the general photosensitive
varnish. However, the general photosensitive varnish still has room
for improvement in the resolution. When the cardo type polymer
formed of the cross-linked polymer having the carboxyl group and
the acrylate group in the same molecular chain is used instead of
the general photosensitive varnish, the cardo type polymer has the
carboxyl group having the development properties and the acrylate
group which is of the cross-linking group in the same molecular
chain, and the cardo type polymer also has the bulky substituent
group in the main chain, so that the radical diffusion is difficult
to occur. Therefore, in the cardo type polymer contained
photoimageable solder resist film, there is the advantage that the
resolution is improved.
[0221] It is desirable that the cardo type polymer contained resin
film satisfies the following physical properties. The following
physical properties are the value for the resin portion which does
not include the filler and the like, and the physical properties
can be appropriately adjusted by adding the filler and the
like.
[0222] In the cardo type polymer contained resin film, it is
preferable that the glass transition temperature (Tg) is not lower
than 180.degree. C., and it is more preferable that Tg is e.g. not
lower than 190.degree. C. When Tg exists in the above range, the
heat-resistant properties are improved in the cardo type polymer
contained resin film.
[0223] In the cardo type polymer contained resin film, it is
preferable that Tg is e.g. not more than 220.degree. C., it is more
preferable that Tg is not more than 210.degree. C. When Tg exists
in the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. Tg can be
measured by the dynamic viscoelasticity measurement (DMA).
[0224] In the range of not more than Tg of the cardo type polymer
contained resin film, it is preferable that the linear expansion
coefficient (CTE) of the cardo type polymer contained resin film is
e.g. not more than 80 ppm/.degree. C., and it is more preferable
that CTE is not more than 75 ppm/.degree. C. When CTE exists in the
above range, the adhesion properties between the cardo type polymer
contained resin film and other members are improved.
[0225] In the range of not more than Tg of the cardo type polymer
contained resin film, it is preferable that CTE of the cardo type
polymer contained resin film is not lower than 50 ppm/.degree. C.,
and it is more preferable that CTE is not lower than 55
ppm/.degree. C. Further, the resin composition having CTE of not
more than 20 ppm/.degree. C. can be obtained by mixing the filler
in the cardo type polymer contained resin film. When CTE exists in
the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. CTE can be
measured according to the thermal expression measurement by the
thermo-mechanical analysis apparatus (TMA).
[0226] It is preferable that heat conductivity of the cardo type
polymer contained resin film is e.g. not more than 0.50
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not more than 0.35 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the heat-resistant
properties are improved in the cardo type polymer contained resin
film.
[0227] It is preferable that the heat conductivity of the cardo
type polymer contained resin film is e.g. not lower than 0.10
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not lower than 0.25 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the cardo type
polymer contained resin film can stably be produced by the usual
manufacturing method. For example, the heat conductivity can be
measured by the disk heat flow meter method (ASTM E1530).
[0228] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that the via aspect ratio is e.g. not lower than 0.5,
and it is more preferable that the via aspect ratio is not lower
than 1. When the via aspect ratio exists in the above range, the
resolution is improved in the cardo type polymer contained resin
film.
[0229] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that the via aspect ratio is e.g. not more than 5, and
it is more preferable that the via aspect ratio is not more than 2.
When the via aspect ratio exists in the above range, the cardo type
polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0230] In the case where an alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric constant of the
cardo type polymer contained resin film is e.g. not more than 4,
and it is more preferable that the dielectric constant is not more
than 3. When the dielectric constant exists in the above range, the
dielectric characteristics such as the high-frequency
characteristics are improved in the cardo type polymer contained
resin film.
[0231] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is possible that the dielectric constant of the
cardo type polymer contained resin film is e.g. not lower than 0.1,
and it is more preferable that the dielectric constant is not lower
than 2.7. When the dielectric constant exists in the above range,
the cardo type polymer contained resin film can stably be produced
by the conventional manufacturing method.
[0232] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric dissipation factor
of the cardo type polymer contained resin film is e.g. not more
than 0.04, and it is more preferable that the dielectric
dissipation factor is not more than 0.029. When the dielectric
dissipation factor exists in the above range, the dielectric
characteristics such as the high-frequency characteristics are
improved in the cardo type polymer contained resin film.
[0233] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric dissipation factor
of the cardo type polymer contained resin film is e.g. not lower
than 0.001, and it is more preferable that the dielectric
dissipation factor is not lower than 0.027. When the dielectric
dissipation factor exists in the above range, the cardo type
polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0234] In the cardo type polymer contained resin film, it is
preferable that the 24-hour water absorption (wt %) is e.g. not
more than 3 wt %, and it is more preferable that the 24-hour water
absorption (wt %) is not more than 1.5 wt %. When the 24-hour water
absorption exists in the above range, the moisture resistance is
improved in the cardo type polymer contained resin film.
[0235] In the cardo type polymer contained resin film, it is
preferable that the 24-hour water absorption (wt %) is e.g. not
lower than 0.5 wt %, and it is more preferable that the 24-hour
water absorption is not lower than 1.3 wt %. When the 24-hour water
absorption (wt %) exists in the above range, the cardo type polymer
contained resin film can stably be produced by the conventional
manufacturing method.
[0236] The characteristics such as the thinning of film, the
mechanical strength, the heat-resistant properties, the adhesion
properties to other members, the dielectric characteristics, and
the moisture resistance are required for the base material 1302 for
which the cardo type polymer contained resin film is used. The
characteristics required for the base material 1302 are realized in
a well-balanced manner, when the cardo type polymer contained resin
film satisfies the above-mentioned physical properties.
[0237] The characteristics such as the thinning of film, the
mechanical strength, the heat-resistant properties, the adhesion
properties to other members, the dielectric characteristics, and
the moisture resistance are required for the dielectric resin film
1312 for which the cardo type polymer contained resin film is used.
The characteristics required for the dielectric resin film 1312 are
realized in a well-balanced manner, when the cardo type polymer
contained resin film satisfies the above-mentioned physical
properties.
[0238] The characteristics such as the thinning of film, the
mechanical strength, the heat-resistant properties, the adhesion
properties to other members, the resolution, the dielectric
characteristics, and the moisture resistance are required for the
photoimageable solder resist layer 1328 for which the cardo type
polymer contained resin film is used. The characteristics required
for the photoimageable solder resist layer 1328 are realized in a
well-balanced manner, when the cardo type polymer contained resin
film satisfies the above-mentioned physical properties.
EXAMPLE 2
[0239] FIGS. 21A to 21D are a sectional view schematically showing
various methods of mounting the semiconductor device on the device
mounting board 1400 including the four-layer ISB structure
according to Example 2.
[0240] In Example 2, the cardo type polymer contained resin film is
equal to the cardo type polymer contained resin film described in
Example 1.
[0241] There are various modes in the semiconductor apparatus which
is formed by mounting the semiconductor device on the device
mounting board 1400 described in Example 2. For example, there is
the mode in which the semiconductor device is mounted on the device
mounting board 1400 by the flip chip connection or the wire bonding
connection. There is the mode the semiconductor device is mounted
on the device mounting board 1400 by taking the face up structure
or the face down structure. There is the mode in which the
semiconductor device is mounted on one side or both sides of the
device mounting board 1400. Further, there is the mode in which
these various modes are combined.
[0242] Specifically, as shown in FIG. 21A, a semiconductor device
1500 such as LSI can be mounted on the device mounting board 1400
of Example 1 in the flip chip form. At this point, electrode pads
1402a and 1402b on the upper surface of the device mounting board
1400 are directly connected to electrode pads 1502a and 1502b of
the semiconductor device 1500 respectively.
[0243] As shown in FIG. 21B, the semiconductor device 1500 such as
LSI can be mounted on the device mounting board 1400 by taking the
face up structure. At this point, the electrode pads 1402a and
1402b located on the top of the device mounting board 1400 are
connected to the electrode pads 1502a and 1502b located on the top
of the semiconductor device 1500 through gold wires 1504a and 1504b
by the wire bonding connection respectively.
[0244] As shown in FIG. 21C, the semiconductor device 1500 such as
LSI can be mounted on the device mounting board 1400 in the flip
chip form, and a semiconductor device 1600 such as IC can be
mounted beneath the device mounting board 1400 in the flip chip
form. At this point, the electrode pads 1402a and 1402b located on
the top of the device mounting board 1400 are directly connected to
the electrode pads 1502a and 1502b of the semiconductor device 1500
respectively. Further, the electrode pads 1402a and 1402b located
on the lower surface of the device mounting board 1400 are directly
connected to electrode pads 1602a and 1602b of the semiconductor
device 1600 respectively.
[0245] As shown in FIG. 21D, the semiconductor device 1500 such as
LSI can be mounted on the device mounting board 1400 by taking the
face up structure, and the device mounting board 1400 can be
mounted on a printed board 1700. At this point, the electrode pads
1402a and 1402b located on the top of the device mounting board
1400 are connected to the electrode pads 1502a and 1502b located on
the top of the semiconductor device 1500 by wire bonding connection
respectively. Further, the electrode pads 1404a and 1404b located
on the lower surface of the device mounting board 1400 are directly
connected to electrode pads 1702a and 1702b located on the top of
the printed board 1700 respectively.
[0246] As described in Example 1, the device mounting board 1400 in
which the cardo type polymer contained resin film is used as the
base material 1302 is used in the semiconductor apparatus having
any structure described above. Therefore, the device mounting board
1400 is excellent in the characteristics such as the heat-resistant
properties and the rigidity, the device mounting board 1400 has the
high reliability, and the device mounting board 1400 is
miniaturized. Accordingly, mounting the semiconductor device on the
device mounting board 1400 can provide the miniaturized
semiconductor apparatus having the high reliability.
[0247] It is also possible that the semiconductor device is mounted
on the device mounting board 1400 in which the cardo type polymer
contained resin film is used for the photoimageable solder resist
layer 1328 in addition to the base material 1302. This allows the
following effects to be further obtained.
[0248] The cardo type polymer contained resin film can be used as
the photoimageable solder resist layer 1328. Since the cardo type
polymer contained resin film has the features described in Example
1, the photoimageable solder resist layer 1328 is excellent in the
characteristics such as the heat-resistant properties, the
rigidity, and the adhesion properties to a device. The
photoimageable solder resist layer 1328 is also excellent in the
resolution, so that the dimensional accuracy is improved in
mounting the semiconductor device on the device mounting board 1400
by using the cardo type polymer contained resin film as the
photoimageable solder resist layer 1328. Therefore, when the cardo
type polymer contained resin film is used as the photoimageable
solder resist layer 1328, the reliability can further be improved
in the device mounting board 1400, and the device mounting board
1400 can further be miniaturized. As a result, mounting the
semiconductor device on the device mounting board 1400 in which the
cardo type polymer contained resin film is used for the
photoimageable solder resist layer 1328 in addition to the base
material 1302 can provide the further miniaturized semiconductor
apparatus having the higher reliability.
[0249] The device mounting board 1400 in which the cardo type
polymer contained resin film is used as the dielectric resin film
1312 is used in Example 2. Therefore, the device mounting board
1400 is excellent in the characteristics such as the heat-resistant
properties, the rigidity, and the interlayer adhesion properties,
and the parasitic capacitance, the device mounting board 1400 has
the high reliability, and the device mounting board 1400 is
miniaturized. As a result, mounting the semiconductor device on the
device mounting board 1400 in which the cardo type polymer
contained resin film is used for the dielectric resin film 1312 can
provide the miniaturized semiconductor apparatus having the high
reliability.
[0250] It is also possible that the semiconductor device is mounted
on the device mounting board 1400 in which the cardo type polymer
contained resin film is used for the photoimageable solder resist
layer 1328 in addition to the dielectric resin film 1312. This
allows the following effects to be obtained.
[0251] The cardo type polymer contained resin film can be used as
the photoimageable solder resist layer 1328. Since the cardo type
polymer contained resin film has the features described in Example
1, the photoimageable solder resist layer 1328 is excellent in the
characteristics such as the heat-resistant properties, the
rigidity, the dielectric characteristics, and the adhesion
properties to the device. The photoimageable solder resist layer
1328 is also excellent in the resolution, so that the dimensional
accuracy is improved in mounting the semiconductor device on the
device mounting board 1400 by using the cardo type polymer
contained resin film as the photoimageable solder resist layer
1328. Therefore, when the cardo type polymer contained resin film
is used as the photoimageable solder resist layer 1328, the
reliability can further be improved in the device mounting board
1400, and the device mounting board 1400 can further be
miniaturized. As a result, mounting the semiconductor device on the
device mounting board 1400 in which the cardo type polymer
contained resin film is used for the photoimageable solder resist
layer 1328 in addition to the dielectric resin film 1312 can
provide the further miniaturized semiconductor apparatus having the
higher reliability.
[0252] It is also possible that the semiconductor device is mounted
on the device mounting board 1400 in which the cardo type polymer
contained resin film is used for both the base material 1302 and
the dielectric resin film 1312. The cardo type polymer contained
resin film is excellent in the characteristics such as the
heat-resistant properties, the mechanical strength, the adhesion
properties, the moisture resistance properties, the dielectric
characteristics, and the resolution properties, and the cardo type
polymer contained resin film can be formed into the thin film, so
that the materials constituting the device mounting board 1400 are
excellent in aspects of the rigidity, the heat-resistant
properties, the interlayer adhesion properties, and the parasitic
capacitance. Therefore, the reliability and the production
stability can remarkably be improved and the further
miniaturization can be realized in the device mounting board 1400.
As a result, mounting the semiconductor device on the device
mounting board 1400 in which the cardo type polymer contained resin
film is used for both the base material 1302 and the dielectric
resin film 1312 can provide the semiconductor apparatus in which
the reliability and the production stability can remarkably be
improved and the further miniaturization can be realized.
[0253] It is also possible that the semiconductor device is mounted
on the device mounting board 1400 in which the cardo type polymer
contained resin film is used for all of the base material 1302, the
dielectric resin film 1312, and the photoimageable solder resist
layer 1328. The cardo type polymer contained resin film is
excellent in the characteristics such as the heat-resistant
properties, the mechanical strength, the adhesion properties, the
moisture resistance properties, the dielectric characteristics, and
the resolution properties, and the cardo type polymer contained
resin film can be formed into the thin film, so that the materials
constituting the device mounting board 1400 are excellent in
aspects of the rigidity, the heat-resistant properties, the
interlayer adhesion properties, the parasitic capacitance, the
dimensional accuracy in mounting the device, and the flatness.
Therefore, the reliability and the production stability can
remarkably be improved and the further miniaturization can be
realized in the device mounting board 1400. As a result, mounting
the semiconductor device on the device mounting board 1400 in which
the cardo type polymer contained resin film is used for all of the
base material 1302, the dielectric resin film 1312, and the
photoimageable solder resist layer 1328 can provide the
semiconductor apparatus in which the reliability and the production
stability can remarkably be improved and the further
miniaturization can be realized.
[0254] The third embodiment is not limited to Examples 1 and 2, and
it is understood that those skilled in the art could modify the
third embodiment without departing from the scope of the
invention.
[0255] In Example 2, the cardo type polymer contained resin film is
used for the base material 1302, the dielectric resin film 1312,
and the photoimageable solder resist layer 1328 which compose the
device mounting board 1400. However, in the device mounting board
except for the device mounting board 1400 having the four-layer ISB
structure, it is also possible that the cardo type polymer
contained resin film is used for the base material, the dielectric
resin film, and the photoimageable solder resist layer.
[0256] Although the device mounting board 1400 which has the
four-layer ISB structure including the four wiring layers is
described in Example 2, it is also possible to use the device
mounting board which has the ISB structure including at least four
wiring layers, e.g. six wiring layers.
[0257] In Example 2, the cardo type polymer contained resin film is
used as the photoimageable solder resist layer 1328 constituting
the device mounting board 1400. However, it is possible that other
materials are used as the photoimageable solder resist layer
1328.
[0258] Fourth Embodiment
[0259] In an aspect of a fourth embodiment, a device mounting board
on which a device is mounted is provided, the device mounting board
includes a base material; a dielectric film which is provided on
the base material; and a solder resist layer which is provided on
the dielectric film, the solder resist layer having a plurality of
layers, wherein at least one of the layers in the solder resist
layer contains a cardo type polymer.
[0260] According to the fourth embodiment, at least one of the
layers in the solder resist layer contains the cardo type polymer,
and the cardo type polymer is excellent in the characteristics such
as the adhesion properties and the moisture absorption properties,
so that the device mounting board having the high reliability can
be provided.
[0261] It is also possible that a top surface layer of the solder
resist layer contains the cardo type polymer.
[0262] It is also possible that the wiring for connecting the
device is provided in the solder resist layer.
[0263] It is possible that the glass transition temperature of the
solder resist layer containing the cardo type polymer ranges from
180.degree. C. to 220.degree. C. In the case where the alternating
electric field having the frequency of 1 MHz is applied to the
solder resist layer containing the cardo type polymer, it is
possible that the dielectric dissipation factor of the solder
resist layer containing the cardo type polymer ranges from 0.001 to
0.04.
[0264] In the range not more than the glass transition temperature
of the solder resist layer containing the cardo type polymer, it is
possible that the linear expansion coefficient of the solder resist
layer containing the cardo type polymer ranges from 50 ppm/.degree.
C. to 80 ppm/.degree. C.
[0265] In another aspect of the fourth embodiment, a semiconductor
apparatus includes any one of the above device mounting boards and
a semiconductor device which is mounted on the device mounting
board.
[0266] According to the fourth embodiment, the semiconductor
apparatus having the high reliability can be provided by including
the device mounting board having the high reliability.
[0267] It is possible that the dielectric film is formed of either
the single-layer dielectric film or the multi-layer dielectric
film.
[0268] In the fourth embodiment, the device mounting board shall
mean the board on which the semiconductor device such as the LSI
chip and the IC chip is mounted. The interposer board in the
later-described ISB (registered trademark) structure can be cited
as an example of the device mounting board. It is possible that the
device mounting board includes the core board such as a silicon
substrate having the rigidity, or it is possible that the device
mounting board does not includes the core board but has the
core-less structure including the multi-layer dielectric film
formed of the dielectric resin films.
EXAMPLE 3
[0269] FIG. 29B is a sectional view showing the device mounting
board 2400 including the four-layer ISB structure according to
Example 3.
[0270] The device mounting board 2400 according to Example 3 has
the structure in which an dielectric resin film 2312 and a
photoimageable solder resist layer 2328 are sequentially laminated
on the upper surface of a base material 2302. The device mounting
board 2400 also has the structure in which the dielectric resin
film 2312 and the photoimageable solder resist layer 2328 are
sequentially laminated on the lower surface of the base material
2302. Further, the photoimageable solder resist layer 2328 has the
structure in which a resin layer 2328b and a resin layer 2328a are
laminated in the order in which they are close to the dielectric
resin film 2312.
[0271] The four-layer ISB structure shall mean the structure which
has the four wiring layers. The wiring layers are embedded in the
dielectric resin film 2312 and the photoimageable solder resist
layer 2328. For convenience of the process of making the via hole
in the photoimageable solder resist layer 2328, it is necessary
that the photoimageable solder resist layer 2328 has
photosensitivity.
[0272] In the four-layer ISB structure, the same materials forming
the upper and lower surfaces of the dielectric resin layers 2312
can be used while sandwiching the base material 2302. Further, the
same materials forming the upper and lower surfaces of the
photoimageable solder resist layers 2328 can be used while
sandwiching the base material 2302. Therefore, from the viewpoint
of process, there is the advantage that the manufacturing process
can be simplified.
[0273] A through-hole 2327 which pierces through the base material
2302, the dielectric resin film 2312, and the photoimageable solder
resist layer 2328 is made.
[0274] A part of the piece of wiring made of a copper film 2308, a
part of the piece of wiring made of a copper film 2320, a part of a
via portion 2311, and the like are embedded in the base material
2302. A part of the piece of the wiring made of the copper film
2308, a part of the piece of the wiring made of the copper film
2320, wiring 2309, a part of the via portion 2311, a part of a via
portion 2323, and the like are embedded in the dielectric resin
film 2312. A part of the piece of the wiring made of the copper
film 2320, a part of the via portion 2323, and the like are
embedded in the photoimageable solder resist layer 2328. An opening
2326 is provided in the photoimageable solder resist layer
2328.
[0275] The material used for the base material 2302 is not limited
to the glass epoxy board, and any material having the moderate
rigidity can be used as the base material 2302. For example, the
resin board and the ceramic board can be used as the base material
2302. More specifically, the base material which is excellent in
the high-frequency characteristics because of the low dielectric
constant can be used. Namely, examples of the base material 2302
include polyphenyl ethylene (PPE), bismaleimide triazine resins
(BT-resin), polytetrafluoro-ethylene (Teflon; registered
trademark), polyimide, liquid crystal polymer (LCP), polynorbornene
(PNB), epoxy resins, acrylic resins, ceramics, the mixture of
ceramic and the organic base material. For example, the thickness
of the base material 2302 is set to about 60 .mu.m.
[0276] The resin material used for the dielectric resin film 2312
is one which is softened by the heating, and the resin material
which can thin the dielectric resin film 2312 to a certain level is
used. Particularly the resin material which is excellent in the
high-frequency characteristics because of the low dielectric
constant can preferably be used. At this point, the thickness of
the dielectric resin film is set to e.g. about 40 .mu.m.
[0277] It is possible that the dielectric resin film 2312 contains
the filling material such as the filler or the fiber. For example,
the granular or fibrous SiO.sub.2 or silicon nitride can be used as
the filler.
[0278] The cardo type polymer contained resin film later-described
is used as the resin layer 2328a constituting the photoimageable
solder resist layer 2328. It is preferable that the resins such as
polyimide and epoxy having photosensitivity are used as the resin
material constituting the resin layer 2328b, and it is more
preferable to use the thermosetting and photosensitive resins such
as epoxy which is equal to the resin material constituting the
resin layer 2328a. It is preferable that the thickness of the resin
layer 2328b is e.g. about 35 .mu.m, and it is more preferable that
the thickness of the resin layer 2328a is e.g. about 25 .mu.m.
[0279] In the cardo type polymer, the bulky substituent group
obstructs movement of the main chain, which results in the
excellent mechanical strength, excellent heat-resistant properties,
and the low linear expansion coefficient. Therefore, in the heat
cycle, the decrease in adhesion properties and the delamination are
suppressed between the resin layer 2328a and the layer around the
resin layer 2328a by using the cardo type polymer contained resin
film as the resin layer 2328a. As a result, the reliability and the
heat-resistant properties are improved in the device mounting board
2400 according to Example 3.
[0280] The multilayer wiring structure including the wiring formed
of copper film 2308, the wiring formed of the copper film 2320, the
wiring 2309, the via portion 2311, and the via portion 2323 is not
limited to the copper wiring. For example, the aluminum wiring, the
aluminum alloy wiring, the copper alloy wiring, the wire-bonded
gold wiring, the gold alloy wiring, the mixed wiring formed by
these pieces of wiring, and the like can also be used as the
multilayer wiring structure.
[0281] It is also possible that the active elements such as the
transistor and the diode and passive elements such as the capacitor
and the resistor are provided on the surface of or in the
four-layer ISB structure. It is also possible that the active
elements or the passive elements are connected to a multilayer
wiring structure in the four-layer ISB and connected to the
external conductive member through the via portion 2323.
[0282] FIGS. 22A to 29B are a process sectional view showing the
device mounting board 2400 having the four-layer ISB structure
according to Example 3.
[0283] As shown in FIG. 22A, the base material 2302 is prepared.
The copper foils 2304 are compression-bonded to the base material
2302. Holes having diameters of about 150 nm are made in the copper
foil 2304 by the drilling. For example, the thickness of the base
material 2302 is set to e.g. about 60 .mu.m, and the thickness of
the copper foil 2304 ranges from about 10 .mu.m to about 15
.mu.m.
[0284] The resin materials such as epoxy resin, BT-resin, liquid
crystal polymer are preferably used as the base material 2302.
[0285] As shown in FIG. 22B, a photo-etching resist layer 2306 is
laminated on the upper surface of the copper foil 2304.
[0286] Then, the patterning of the photo-etching resist layer 2306
is performed by the exposure with glass as the mask. As shown in
FIGS. 23A and 23B, a via hole 2307 having the diameter of e.g.
about 100 nm is made using the photo-etching resist layer 2306 as
the mask. The via hole 2307 is made by the chemical etching process
using chemicals. Then, the inside of the via hole 2307 is roughened
and cleaned by the wet process. As shown in FIG. 23C, the via hole
2307 is filled with the conductive material to form the via portion
2311 by the electroless plating ready for high aspect ratio and
then by the electrolytic plating ready for high aspect ratio. Then,
the copper films 2308 are formed over the surfaces.
[0287] For example, the via portion 2311 can be formed in the
following manner. After the thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the plating. Usually palladium is used as the
electroless plating catalyst. In order to cause the electroless
plating catalyst to adhere to the flexible dielectric resin,
palladium is contained in the aqueous solution while being in the
complex state, and the flexible dielectric base material is dipped
to cause the palladium complex to adhere to the surface of the
dielectric base material. In the state of things, nuclei for
starting the plating onto the surface of the flexible dielectric
base material can be formed by reducing the palladium complex to
the metal palladium with the reducing agent.
[0288] As shown in FIG. 24A, photo-etching resist layers 2310 are
laminated onto the top surfaces of the upper and lower copper films
2308. As shown in FIG. 24B, after the patterning is performed on
the photo-etching resist layer 2310 by the exposure with glass as
the mask, the wiring 2309 made of copper is formed by etching the
copper film 2308 using the photo-etching resist layer 2310 as the
mask. For example, the wiring pattern can be formed by spraying a
point exposed from the resist with the chemical etching solution to
remove the unnecessary copper plating.
[0289] As shown in FIG. 25A, the dielectric resin films 2312 with
copper foils 2314 are compression-bonded to the top surfaces of the
upper wiring 2309 and the lower wiring 2309. For example, the
thickness of the dielectric resin film 2312 is set to e.g. about 40
.mu.m, and the thickness of the copper foil 2314 is set in the
range from e.g. about 10 .mu.m to about 15 .mu.m.
[0290] Examples of the material used for the dielectric resin film
2312 include thermosetting resins such as epoxy resin, liquid
crystal polymer, PPE resin, polyimide resin, fluororesin, phenolic
resin, polyamide bismaleimide, and melamine derivatives such as BT
resin. The liquid crystal polymer, epoxy resin, and melamine
derivatives such as BT resin which are excellent in the
high-frequency characteristics are preferably used as the
dielectric resin film 2312. It is possible that the filling
material such as the filler and the additive is appropriately added
in conjunction with the resin. For example, the granular or fibrous
SiO.sub.2 or SiN can be used as the filler.
[0291] With reference to the compression-bonding method, the
dielectric resin film 2312 with copper foil is caused to come into
contact with the base material 2302 and the wiring 2309, and the
base material 2302 and the wiring 2309 are fitted into the
dielectric resin film 2312. Then, as shown in FIG. 25B, the
dielectric resin film 2312 is heated in the vacuum or under the
reduced pressure to compression-bond the dielectric resin film 2312
to the base material 2302 and the wiring 2309. As shown in FIG.
25C, the copper foil 2314 is irradiated with the X-ray to make
holes 2315 which pierce through the copper foil 2314, the
dielectric resin film 2312, the wiring 2309, and the base material
2302.
[0292] As shown in FIG. 26A, photo-etching resist layers 2316 are
laminated on the top surfaces of the upper and lower copper foils
2314. As shown in FIG. 26B, after the patterning of the
photo-etching resist layer 2316 is performed by the exposure with
the glass as the mask, wiring 2319 made of copper is formed by
etching the copper foil 2314 with the photo-etching resist layer
2316 as the mask. For example, the wiring pattern can be formed by
spraying a point exposed from the resist with the chemical etching
solution to remove the unnecessary copper foil.
[0293] As shown in FIG. 27A, a photo-etching resist layer 2317 is
laminated onto the surfaces of the upper wiring 2319 and the lower
wiring 2319. As shown in FIG. 27B, after the patterning of the
photo-etching resist layer 2317 is performed by the exposure with
the glass as the mask, via holes 322 having the diameters of about
100 nm are made using the photo-etching resist layer 2317 as the
mask. In Example 3, the chemical etching process using the
chemicals is adopted as the method of making the via holes 2322.
However, machining, dry etching with plasma, laser machining, and
the like can also be used for making the via holes 2322. Then, the
inside of the via hole 2322 is roughened and cleaned by the wet
process. As shown in FIG. 27C, the via hole 2322 is filled with the
conductive material to form the via portion 2323 by the electroless
plating ready for high aspect ratio and then by the electrolytic
plating ready for the high aspect ratio. Then, the copper films
2320 are formed over the surfaces.
[0294] For example, the via portion 2323 can be formed in the
following manner. After the thin film whose thickness ranges from
about 0.5 to about 1 .mu.m is formed over the surface by the
electroless copper plating, the film having the thickness of about
20 .mu.m is formed by the electrolytic plating. Usually palladium
is used as the electroless plating catalyst. In order to cause the
electroless plating catalyst to adhere to the flexible dielectric
resin, palladium is contained in the aqueous solution while being
in the complex state, and the flexible dielectric base material is
dipped to cause the palladium complex to adhere to the surface of
the dielectric base material. In the state of things, the nuclei
for starting the plating onto the surface of the flexible
dielectric base material can be formed by reducing the palladium
complex to the metal palladium with the reducing agent.
[0295] Then, as shown in FIG. 28A, the photo-etching resist layers
2316 are laminated onto the top surfaces of the upper and lower
copper films 2320. As shown in FIG. 28B, after the patterning is
performed on the photo-etching resist layer 2316 by the exposure
with glass as the mask, wiring 2324 made of copper is formed by
etching the copper film 2320 using the photo-etching resist layer
2318 as the mask. For example, the wiring pattern can be formed by
spraying the point exposed from the resist with the chemical
etching solution to remove the unnecessary copper foil.
[0296] As shown in FIG. 29A, the photoimageable solder resist
layers 2328 in which the resin layer 2328a and the resin layer
2328b are laminated are laminated onto the top surfaces of the
upper wiring 2324 and the lower wiring 2324. With reference to the
laminating conditions, for example, the temperature is set to
110.degree. C., the time is set in the range from 1 to 2 minutes,
and the pressure is set to about 2 atmospheres. Then, the resin
layer 2328a is partially cured by the after-baking process.
[0297] The thickness of the resin layer 2328b is set to e.g. about
35 .mu.m, and the thickness of the resin layer 2328a is e.g. about
25 .mu.m. The cardo type polymer contained resin film
later-described is used as the resin layer 2328a. It is preferable
that the resins such as polyimide and epoxy having the
photosensitivity are used as the resin material constituting the
resin layer 2328b, and it is more preferable to use the
thermosetting and photosensitive resins such as epoxy which is
equal to the resin material constituting the resin layer 2328a.
[0298] Then, as shown in FIG. 29B, after the patterning is
performed on the photoimageable solder resist layer 2328 by the
exposure with the glass as the mask, the opening 2326 having the
diameter of e.g. about 100 nm is formed so that the via portion
2323 formed inside the via hole 2322 is exposed. In Example 3, for
example, the chemical etching process using chemicals is used for
forming the opening 2326. Then, the gold plating is performed on
the exposed via portion 2323 (not shown).
[0299] The effect that the cardo type polymer contained resin film
is used for the resin layer 2328a constituting the photoimageable
solder resist layer 2328 in Example 3 will be described below.
[0300] The cardo type polymer is a general term for the polymer
having the structure in which a cyclic group is directly bonded to
the polymer main chain as shown in Chemical Formula V. Where
R.sub.1 and R.sub.2 express the bivalent groups such as the
alkylene group and the group containing the aromatic ring.
[0301] [Chemical Formula V] 5
[0302] Namely, the cardo type polymer shall mean the polymer having
the structure in which the bulky substituent group containing the
quaternary carbon atom is substantially perpendicular to the main
chain.
[0303] It is possible that cyclic portion includes either the
saturated bond or the unsaturated bond. In addition to the carbon
atom, it is possible that cyclic portion includes atoms such as the
nitrogen atom, the oxygen atom, the sulfur atom, and the phosphorus
atom. It is possible that the cyclic portion is formed in the
polycycle or the fused ring. It is possible that the cyclic portion
is bonded to other carbon chains and further cross-linked.
[0304] As shown in Chemical Formula V, the cyclic group such as the
fluorenyl group which includes the fused ring having the structure,
in which the six-membered rings are bonded to both sides of the
five-membered ring and the remaining one carbon atom of the
five-membered ring is bonded to the main chain, can be cited as an
example of the bulky substituent group.
[0305] As shown in Chemical Formula VI, the fluorenyl group is one
in which the 9-position carbon atom of fluolene is dehydrogenized.
In the cardo type polymer, as shown in Chemical Formula V, the
fluorenyl group is bonded to the carbon atom of the alkyl group
which is of the main chain at the position of the dehydrogenized
carbon atom.
[0306] [Chemical Formula VI] 6
[0307] Since the cardo type polymer is one which has the above
structure, the cardo type polymer has the following effects:
[0308] (1) Rotation constraint of polymer main chain.
[0309] (2) Conformation control of main chain and side chain.
[0310] (3) Packing obstruction between molecules.
[0311] (4) Increase in aromaticity by introducing aromatic
substituent group to side chain.
[0312] Accordingly, the cardo type polymer has the advantages such
as the high mechanical strength, high heat-resistant properties,
solvent solubility, high transparency, high refractive index, low
birefringence, and higher gas permeability.
[0313] The cardo type polymer contained resin film is excellent in
the moisture resistance properties and the adhesion properties.
Because the resins in the same line are used for the resin layer
2328a constituting the surface layer of the photoimageable solder
resist layer 2328 and the resin layer 2328b, the interlayer
adhesion properties is stabilized between the resin layer 2328a and
the resin layer 2328b. Therefore, the adhesion properties between
the resin layer 2328a and the device mounted on the surface of the
device mounting board 2400 or other layers can be improved by using
the cardo type polymer contained resin film for the resin layer
2328a. Accordingly, the reliability can be improved in the device
mounting board 2400.
[0314] In the photoimageable solder resist layer 2328 including the
resin layer 2328a and the resin layer 2328b, the total thickness of
about 60 .mu.m becomes 1.7 times when compared with the thickness
of about 35 .mu.m in the conventional photoimageable solder resist
layer. Therefore, the total thickness of the device mounting board
2400 becomes thickened when compared with the total thickness of
the device mounting board in which the conventional photoimageable
solder resist layer is used. At this point, in the device mounting
board 2400 of Example 3, since the cardo type polymer contained
resin film which is excellent in the resolution and the rigidity is
used as the resin layer 2328a, the photoimageable solder resist
layer 2328 can be thickened without decreasing the resolution,
which result in the photoimageable solder resist layer 2328 having
the high rigidity. Accordingly, the amount of warp can be
suppressed in the device mounting board 2400. As a result, the
reliability can be improved in the device mounting board 2400.
[0315] The cardo type polymer contained resin film has the
excellent resolution as described later. In the cardo type polymer
contained resin film used for the resin layer 2328a in Example 3,
the thickness becomes about two-thirds when compared with the
conventional resin layer, so that the resin layer 2328a for which
the cardo type polymer contained resin film is used has the more
excellent resolution. Accordingly, the dimensional accuracy can be
improved in making the via hole 2326. As a result, the reliability
can be improved in the device mounting board 2400.
[0316] The cardo type polymer contained resin film has the high
mechanical strength and the excellent heat-resistant properties as
described later, so that the reliability can be improved in the
device mounting board 2400.
[0317] The linear expansion coefficients of the resin layer 2328a
and the resin layer 2328b are cause to be relatively close to each
other by using the resins in the same line for the resin layer
2328a and the resin layer 2328b. Therefore, the interlayer adhesion
properties can be improved between the resin layer 2328a and the
resin layer 2328b. As a result, the reliability can be improved in
the device mounting board 2400.
[0318] It is also possible that the cardo type polymer is one which
is formed by the cross-linked polymer having the carboxyl group and
the acrylate group in the same molecular chain. Conventionally, the
blend of the carboxyl group oligomer having development properties
and the multifunctional acryl is used as the general photosensitive
varnish. However, the general photosensitive varnish still has room
for improvement in the resolution. When the cardo type polymer
formed of the cross-linked polymer having the carboxyl group and
the acrylate group in the same molecular chain is used instead of
the general photosensitive varnish, the cardo type polymer has the
carboxyl group having the development properties and the acrylate
group which is of the cross-linking group in the same molecular
chain, and the cardo type polymer also has the bulky substituent
group in the main chain, so that the radical diffusion is difficult
to occur. Therefore, in the cardo type polymer contained
photoimageable solder resist film, there is the advantage that the
resolution is improved.
[0319] It is desirable that the cardo type polymer contained resin
film satisfies the following physical properties. The following
physical properties are the value for the resin portion which does
not include the filler and the like, and the physical properties
can be appropriately adjusted by adding the filler and the
like.
[0320] In the cardo type polymer contained resin film, it is
preferable that the glass transition temperature (Tg) is e.g. not
lower than 180.degree. C., and it is more preferable that Tg is not
lower than 190.degree. C. When Tg exists in the above range, the
heat-resistant properties are improved in the cardo type polymer
contained resin film.
[0321] In the cardo type polymer contained resin film, it is
preferable that Tg is e.g. not more than 220.degree. C., it is more
preferable that Tg is not more than 210.degree. C. When Tg exists
in the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. Tg can be
measured by the dynamic viscoelasticity measurement (DMA) of a bulk
sample for example.
[0322] In the range not more than Tg of the cardo type polymer
contained resin film, it is preferable that the linear expansion
coefficient (CTE) of the cardo type polymer contained resin film is
e.g. not more than 80 ppm/.degree. C., and it is more preferable
that CTE is not more than 75 ppm/.degree. C. When CTE exists in the
above range, the adhesion properties between the cardo type polymer
contained resin film and other members are improved.
[0323] In the range not more than Tg of the cardo type polymer
contained resin film, it is preferable that CTE of the cardo type
polymer contained resin film is e.g. not lower than 50 ppm/.degree.
C., and it is more preferable that CTE is not lower than 55
ppm/.degree. C. Further, the resin composition having CTE of not
more than 20 ppm/.degree. C. can be obtained by mixing the filler
in the cardo type polymer contained resin film. When CTE exists in
the above range, the cardo type polymer contained resin film can
stably be produced by the usual manufacturing method. CTE can be
measured according to the thermal expansion measurement by the
thermo-mechanical analysis apparatus (TMA).
[0324] It is preferable that heat conductivity of the cardo type
polymer contained resin film is e.g. not more than 0.50
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not more than 0.35 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the heat-resistant
properties are improved in the cardo type polymer contained resin
film.
[0325] It is preferable that the heat conductivity of the cardo
type polymer contained resin film is e.g. not lower than 0.10
W/cm.sup.2.multidot.sec, and it is more preferable that the heat
conductivity is not lower than 0.25 W/cm.sup.2.multidot.sec. When
the heat conductivity exists in the above range, the cardo type
polymer contained resin film can stably be produced by the usual
manufacturing method. For example, the heat conductivity can be
measured by the disk heat flow meter method (ASTM E1530).
[0326] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that a via aspect ratio is e.g. not lower than 0.5, and
it is more preferable that the via aspect ratio is not lower than
1. When the via aspect ratio exists in the above range, the
resolution is improved in the cardo type polymer contained resin
film.
[0327] In the via portion which has the diameter ranging from 10 to
100 .mu.m in the cardo type polymer contained resin film, it is
preferable that the via aspect ratio is e.g. not more than 5, and
it is more preferable that the via aspect ratio is not more than 2.
When the via aspect ratio exists in the above range, the cardo type
polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0328] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric constant of the
cardo type polymer contained resin film is e.g. not more than 4,
and it is more preferable that the dielectric constant is not more
than 3. When the dielectric constant exists in the above range, the
dielectric characteristics such as the high-frequency
characteristics are improved in the cardo type polymer contained
resin film.
[0329] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is possible that the dielectric constant is e.g. not
lower than 0.1, and it is more preferable that the dielectric
constant is not lower than 2.7. When the dielectric constant exists
in the above range, the cardo type polymer contained resin film can
stably be produced by the conventional manufacturing method.
[0330] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric dissipation factor
of the cardo type polymer contained resin film is e.g. not more
than 0.04, and it is more preferable that the dielectric
dissipation factor is not more than 0.029. When the dielectric
dissipation factor exists in the above range, the dielectric
characteristics such as the high-frequency characteristics are
improved in the cardo type polymer contained resin film.
[0331] In the case where the alternating electric field having the
frequency of 1 MHz is applied to the cardo type polymer contained
resin film, it is preferable that the dielectric dissipation factor
of the cardo type polymer contained resin film is e.g. not lower
than 0.001, and it is more preferable that the dielectric
dissipation factor is not lower than 0.027. When the dielectric
dissipation factor exists in the above range, the cardo type
polymer contained resin film can stably be produced by the
conventional manufacturing method.
[0332] In the cardo type polymer contained resin film, it is
preferable that the 24-hour water absorption (wt %) is e.g. not
more than 3 wt %, and it is more preferable that the 24-hour water
absorption (wt %) is not more than 1.5 wt %. When the 24-hour water
absorption exists in the above range, moisture resistance is
improved in the cardo type polymer contained resin film.
[0333] In the cardo type polymer contained resin film, it is
preferable that the 24-hour water absorption (wt %) is e.g. not
lower than 0.5 wt %, and it is more preferable that the 24-hour
water absorption is not lower than 1.3 wt %. When the 24-hour water
absorption (wt %) exists in the above range, the cardo type polymer
contained resin film can stably be produced by the conventional
manufacturing method.
[0334] The characteristics such as the mechanical strength, the
heat-resistant properties, the adhesion properties to other
members, the resolution, the dielectric characteristics, and the
moisture resistance are required for the resin layer 2328a for
which the cardo type polymer contained resin film is used. The
characteristics required for the photoimageable solder resist film
2328 are realized in a well-balanced manner, when the cardo type
polymer contained resin film satisfies the above physical
properties.
EXAMPLE 4
[0335] FIGS. 30A to 30D are a sectional view schematically showing
various methods of mounting the semiconductor device on the device
mounting board 2400 including the four-layer ISB structure
according to Example 3.
[0336] In Example 4, the cardo type polymer contained resin film is
equal to the cardo type polymer contained resin film described in
Example 3.
[0337] There are various modes in the semiconductor apparatus which
is formed by mounting the semiconductor device on the device
mounting board 2400 described in Example 3. For example, there is
the mode in which the semiconductor device is mounted on the device
mounting board 2400 by the flip chip connection or the wire bonding
connection. There is the mode the semiconductor device is mounted
on the device mounting board 2400 by taking the face up structure
or the face down structure. There is the mode in which the
semiconductor device is mounted on one side or both sides of the
device mounting board 2400. Further, there is the mode in which
these various modes are combined.
[0338] Specifically, as shown in FIG. 30A, a semiconductor device
2500 such as LSI can be mounted on the device mounting board 2400
of Example 3 in the flip chip form. At this point, electrode pads
2402a and 2402b on the device mounting board 2400 are directly
connected to electrode pads 2502a and 2502b of the semiconductor
device 2500 respectively.
[0339] As shown in FIG. 30B, the semiconductor device 2500 such as
LSI can be mounted on the device mounting board 2400 by taking the
face up structure. At this point, the electrode pads 2402a and
2402b located on the top of the device mounting board 2400 are
connected to the electrode pads 2502a and 2502b located on the top
of the semiconductor device 2500 through the gold wires 2504a and
2504b by the wire bonding connection respectively.
[0340] As shown in FIG. 30C, the semiconductor device 2500 such as
LSI can be mounted on the device mounting board 2400 in the flip
chip form, and a semiconductor device 2600 such as IC can be
mounted beneath the device mounting board 2400 in the flip chip
form. At this point, the electrode pads 2402a and 2402b located on
the top of the device mounting board 2400 are directly connected to
the electrode pads 2502a and 2502b of the semiconductor device 2500
respectively. Further, the electrode pads 2404a and 2404b located
on the lower surface of the device mounting board 2400 are directly
connected to electrode pads 2602a and 2602b of the semiconductor
device 2600 respectively.
[0341] As shown in FIG. 30D, the semiconductor device 2500 such as
LSI can be mounted on the device mounting board 2400 by taking the
face up structure, and the device mounting board 2400 can be
mounted on a printed board 2700. At this point, the electrode pads
2402a and 2402b located on the top of the device mounting board
2400 are connected to the electrode pads 2502a and 2502b located on
the top of the semiconductor device 2500 through the gold wires
2504a and 2504b by wire bonding connection respectively. Further,
the electrode pads 2404a and 2404b located on the lower surface of
the device mounting board 2400 are directly connected to electrode
pads 2702a and 2702b located on the top of the printed board 2700
respectively.
[0342] As described in Example 3, the cardo type polymer contained
resin film is used as the resin layer 2328a in the semiconductor
apparatus having any structure described above. As described above,
the cardo type polymer contained resin film is excellent in the
characteristics such as the moisture resistance, the interlayer
adhesion properties, the dielectric characteristics, and the
resolution. Therefore, the cardo type polymer contained resin film
is excellent in the adhesion properties between the device mounting
board 2400 and the device mounted on the device mounting board
2400, the dimensional accuracy can be improved when the via holes
are made in the resin layer 2328a, and the parasitic capacitance
can be decreased. Further, the film made of the cardo type polymer
contained resin film, which has the high mechanical strength, is
used for the resin layer 2328a, so that the thick photoimageable
solder resist layer 2328 can be formed. Therefore, the warp of the
whole of device mounting board 2400 can be suppressed, which
improves the accuracy when the device is mounted on the device
mounting board 2400. Accordingly, mounting the device on the device
mounting board 2400 can provide the semiconductor apparatus having
the high reliability.
[0343] The invention is not limited to the fourth embodiment, and
it is understood that those skilled in the art could modify the
fourth embodiment without departing from the scope of the
invention.
[0344] For example, it is possible that the cardo type polymer
contained resin film is used as the resin layer 2328b.
[0345] Since the cardo type polymer contained resin film has the
features described above, the material which is excellent in the
characteristics such as the adhesion properties, the heat-resistant
properties, and the dielectric characteristics is used as the resin
layer 2328b. Therefore, by using the cardo type polymer contained
resin film for the resin layer 2823b, the interlayer adhesion
properties can be improved between the resin layer 2328b and the
layers adjacent to the resin layer 2328b and the parasitic
capacitance between the pieces of wiring can be decreased.
Accordingly, the reliability can be improved in the device mounting
board 2400 of the Example 4 by using the cardo type polymer
contained resin film for the resin layer 2328b. Further, mounting
the semiconductor device on the device mounting board 2400 can
provide the semiconductor apparatus having the high
reliability.
[0346] It is possible that the cardo type polymer contained resin
film is used as the material constituting the resin layer 2328b in
addition to the resin layer 2328a. Therefore, the resin layer 2328a
and the resin layer 2328b have the excellent characteristics held
by the cardo type polymer contained resin film. As a result, the
reliability can further be improved in the device mounting board
2400 of Example 4. Further, mounting the semiconductor device on
the device mounting board 2400 can provide the semiconductor
apparatus having the high reliability.
[0347] It is possible that the cardo type polymer contained resin
film is used as the material constituting the base material 2302 or
the dielectric resin film 2312 in addition to the resin layer
2328a.
[0348] When the cardo type polymer contained resin film is used as
the material constituting the base material 2302 in addition to the
resin layer 2328a, the following effect can be obtained.
[0349] As described above, the cardo type polymer contained resin
film is excellent in the adhesion properties and the heat-resistant
properties. Accordingly, the reliability can further be improved in
the device mounting board 2400 of Example 4 by using the cardo type
polymer contained resin film for the base material 2302 in addition
to the resin layer 2328a. Further, mounting the semiconductor
device on the device mounting board 2400 can provide the
semiconductor apparatus having the higher reliability.
[0350] When the cardo type polymer contained resin film is used as
the material constituting the dielectric resin film 2312, the
following effect can be obtained.
[0351] As described above, the cardo type polymer contained resin
film is excellent in the adhesion properties, the heat-resistant
properties, and the dielectric characteristics, so that the
interlayer adhesion properties are improved and the parasitic
capacitance is decreased between the pieces of wiring in the
dielectric resin film 2312. Therefore, the reliability can be more
improved in the device mounting board 2400. Accordingly, the
reliability can further be improved in the device mounting board
2400 of Example 4 by using the cardo type polymer contained resin
film for the dielectric resin film 2312 in addition to the resin
layer 2328a. Further, mounting the semiconductor device on the
device mounting board 2400 can provide the semiconductor apparatus
in which the reliability and the production stability are
remarkably improved.
[0352] It is also possible that the cardo type polymer contained
resin film is used for the base material 2302, the resin layer
2328a, and the resin layer 2328b.
[0353] Since the cardo type polymer contained resin film is
excellent in the characteristics such as the heat-resistant
properties, the mechanical strength, the adhesion properties, the
moisture resistance properties, the dielectric characteristics, and
the resolution characteristics, the materials constituting the
device mounting board 2400 are excellent in the characteristics
such as the rigidity, the heat-resistant properties, the interlayer
adhesion properties, the parasitic capacitance, the dimensional
accuracy in mounting the device, and the flatness. Therefore, the
reliability and the production stability can remarkably be improved
in the device mounting board 2400 by using the cardo type polymer
contained resin film for the base material 2302 and the resin layer
2328b in addition to the resin layer 2328a. Further, mounting the
semiconductor device on the device mounting board 2400 can provide
the semiconductor apparatus in which the reliability and-the
production stability are remarkably improved.
[0354] It is also possible that the cardo type polymer contained
resin film is used for the dielectric resin film 2312, the resin
layer 2328a, and the resin layer 2328b.
[0355] Since the cardo type polymer contained resin film is
excellent in the characteristics such as the heat-resistant
properties, the mechanical strength, the adhesion properties, the
moisture resistance properties, the dielectric characteristics, and
the resolution characteristics, the materials constituting the
device mounting board 2400 are excellent in the characteristics
such as the rigidity, the heat-resistant properties, the interlayer
adhesion properties, the parasitic capacitance, dimensional
accuracy in mounting the device, and the flatness. Therefore, the
reliability and the production stability can remarkably be improved
in the device mounting board 2400 by using the cardo type polymer
contained resin film for the dielectric resin film 2312 and the
resin layer 2328b in addition to the resin layer 2328a. Further,
mounting the semiconductor device on the device mounting board 2400
can provide the semiconductor apparatus in which the reliability
and the production stability are remarkably improved.
[0356] It is also possible that the cardo type polymer contained
resin film is used for the base material 2302, the dielectric resin
film 2312, and the resin layer 2328a.
[0357] Since the cardo type polymer contained resin film is
excellent in the characteristics such as the heat-resistant
properties, the mechanical strength, the adhesion properties, the
moisture resistance properties, the dielectric characteristics, and
the resolution characteristics, the materials constituting the
device mounting board 2400 are excellent in the characteristics
such as the rigidity, the heat-resistant properties, the interlayer
adhesion properties, the parasitic capacitance, the dimensional
accuracy in mounting the device, and the flatness. Therefore, the
reliability and the production stability can remarkably be improved
in the device mounting board 2400 by using the cardo type polymer
contained resin film for the base material 2302 and the dielectric
resin layer 2312 in addition to the resin layer 2328a. Further,
mounting the semiconductor device on the device mounting board 2400
can provide the semiconductor apparatus in which the reliability
and the production stability are remarkably improved.
[0358] It is also possible that the cardo type polymer contained
resin film is used for the base material 2302, the dielectric resin
film 2312, resin layer 2328a, and the resin layer 2328b.
[0359] Since the cardo type polymer contained resin film is
excellent in the characteristics such as the heat-resistant
properties, the mechanical strength, the adhesion properties, the
moisture resistance properties, the dielectric characteristics, and
the resolution characteristics, the materials constituting the
device mounting board 2400 are excellent in the characteristics
such as the rigidity, the heat-resistant properties, the interlayer
adhesion properties, the parasitic capacitance, the dimensional
accuracy in mounting the device, and the flatness. Therefore, the
reliability and the production stability can remarkably be improved
in the device mounting board 2400 by using the cardo type polymer
contained resin film for the base material 2302, the dielectric
resin film 2312, and the resin layer 2328b in addition to the resin
layer 2328a. Further, mounting the semiconductor device on the
device mounting board 2400 can provide the semiconductor apparatus
in which the reliability and the production stability are
remarkably improved.
[0360] It is also possible that the cardo type polymer contained
resin film is used for the resin layer constituting the
photoimageable solder resist layer of the device mounting board or
the like which has the ISB structure including at least four wiring
layers, e.g. six wiring layers. It is also possible that the cardo
type polymer contained resin film is used for the surface resin
layer portion of the photoimageable solder resist layer in the
board of other semiconductor packages.
[0361] Constitution using the photoimageable solder resist layer
2328 in which the resin layer 2328a and the resin layer 2328b are
previously laminated is described in Example 4. However, it is also
possible that the resin layer 2328a is formed on the resin layer
2328b after the resin layer 2328b is formed on the dielectric resin
film 2312.
[0362] In Example 4, the two resin layers of the resin layer 2328a
and the resin layer 2328b are laminated, and constitution using the
photoimageable solder resist layer 2328 in which the cardo type
polymer contained resin film is used for one of the two resin
layers is described. However, it is also possible that the
photoimageable solder resist layer in which at least three resin
layers are laminated is used and the cardo type polymer contained
resin film is used for at least one of the three resin layers.
Therefore, the cardo type polymer contained resin film is excellent
in the characteristics such as the heat-resistant properties, the
mechanical strength, the adhesion properties, the moisture
resistance properties, the dielectric characteristics, and the
resolution characteristics, so that the resin layer for which the
cardo type polymer contained resin film constituting the device
mounting board 2400 is used is excellent in the characteristics
such as the rigidity, the heat-resistant properties, the interlayer
adhesion properties, the parasitic capacitance, the dimensional
accuracy in mounting the device, and the flatness. Accordingly, the
reliability and the production stability can be improved in the
device mounting board 2400. Further, mounting the semiconductor
device on the device mounting board can provide the semiconductor
apparatus in which the reliability and the production stability are
improved.
* * * * *