U.S. patent application number 11/072521 was filed with the patent office on 2005-10-20 for substrate processing apparatus, substrate processing method, and program for implementing the method.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. Invention is credited to Hashimoto, Mitsuru, Yamazaki, Satoshi.
Application Number | 20050233477 11/072521 |
Document ID | / |
Family ID | 35096777 |
Filed Date | 2005-10-20 |
United States Patent
Application |
20050233477 |
Kind Code |
A1 |
Yamazaki, Satoshi ; et
al. |
October 20, 2005 |
Substrate processing apparatus, substrate processing method, and
program for implementing the method
Abstract
A substrate processing apparatus which is capable of enhancing
productivity in manufacturing product substrates. In process
chambers 106 and 107 of an etching apparatus 100, etching is
carried out on a substrate as an object to be processed, and dummy
processing is carried out on at least one non-product substrate
before execution of the etching. A host computer 200 determines
whether or not the dummy processing is to be executed. The host
computer 200 determines whether or not the interior of each of the
process chambers 106 and 107 is in a stable state, and omits the
execution of the dummy processing when it is determined that it is
in the stable state.
Inventors: |
Yamazaki, Satoshi;
(Nirasaki-shi, JP) ; Hashimoto, Mitsuru;
(Nirasaki-shi, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
TOKYO ELECTRON LIMITED
Tokyo
JP
|
Family ID: |
35096777 |
Appl. No.: |
11/072521 |
Filed: |
March 7, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60635486 |
Dec 14, 2004 |
|
|
|
Current U.S.
Class: |
438/5 ; 118/712;
156/345.24; 257/E21.525 |
Current CPC
Class: |
H01L 21/67167 20130101;
H01L 21/67173 20130101; H01L 21/67276 20130101; H01L 22/20
20130101; H01J 37/32935 20130101; H01L 21/67253 20130101 |
Class at
Publication: |
438/005 ;
118/712; 156/345.24 |
International
Class: |
H01L 021/00; C23F
001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 5, 2004 |
JP |
2004-062982 |
Sep 24, 2004 |
JP |
2004-277774 |
Feb 23, 2005 |
JP |
2005-047362 |
Claims
What is claimed is:
1. A substrate processing apparatus comprising: at least one
process chamber in which predetermined processing is carried out on
a substrate as an object to be processed; dummy processing means
for carrying out dummy processing on a non-product substrate; and
determining means for determining whether or not the dummy
processing is to be executed, wherein: said determining means
includes stability determining means for determining whether or not
an interior of said process chamber is in a stable state; and said
dummy processing means includes dummy processing omitting means for
omitting execution of the dummy processing when said stability
determining means determines that the interior of said process
chamber is in the stable state.
2. A substrate processing apparatus as claimed in claim 1, wherein
when a standing time over which said process chamber is left
standing and counting of which is started from a time count start
reference time set to an execution end time of the predetermined
processing has not exceeded a predetermined time period, said
stability determining means determines that the interior of said
process chamber is in the stable state.
3. A substrate processing apparatus as claimed in claim 2, wherein
said determining means performs the determination based on preset
dummy processing execution requirements or dummy processing
non-execution requirements, the dummy processing non-execution
requirements including a condition that the standing time does not
exceed the predetermined time period.
4. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing non-execution requirements include a condition
that the non-product substrate does not exist.
5. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing non-execution requirements include a condition
that execution of the dummy processing on the non-product substrate
before execution of the predetermined processing on the substrate
is not designated.
6. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that it is configured such that omission of execution of the dummy
processing by said dummy processing omitting means is disabled.
7. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that said process chamber is in an off-line state.
8. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that the substrate is a first substrate to be processed after power
of the substrate processing apparatus is turned on.
9. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that a substrate processed before the substrate was processed in an
off-line state.
10. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that the substrate is a first substrate to be processed after
execution of maintenance of said process chamber.
11. A substrate processing apparatus as claimed in claim 3, wherein
the dummy processing execution requirements include a condition
that abort processing for forcibly terminating processing being
executed was executed on a substrate which was being processed
immediately before processing of the substrate.
12. A substrate processing apparatus as claimed in claim 1, wherein
when said stability determining means determines that the interior
of said process chamber is not in the stable state, said dummy
processing means carries out the dummy processing once.
13. A substrate processing apparatus as claimed in claim 12,
wherein processing time of the dummy processing carried out once is
longer than processing time of the predetermined processing to be
carried out on the substrate.
14. A substrate processing apparatus as claimed in claim 12,
wherein a set value of power required for the dummy processing to
be carried out once is higher than a set value of power required
for the predetermined processing to be carried out on the
substrate.
15. A substrate processing apparatus as claimed in claim 1, wherein
said determining means performs the determination for each
substrate lot including the substrate.
16. A substrate processing apparatus as claimed in claim 1,
comprising abort processing setting means for allowing setting to
be made as to whether or not the abort processing is to be executed
on the substrate, after abort processing for forcibly terminating
processing being executed was executed on a substrate which was
being processed immediately before processing of the substrate.
17. A substrate processing apparatus as claimed in claim 1,
comprising log recording means for recording a log indicative of
whether or not execution of the dummy processing was omitted.
18. A substrate processing method for a substrate processing
apparatus including at least one process chamber in which
predetermined processing is carried out on a substrate as an object
to be processed, comprising: a dummy processing step of carrying
out dummy processing on a non-product substrate; and a determining
step of determining whether or not the dummy processing is to be
executed, wherein: said determining step includes a stability
determining step of determining whether or not an interior of the
process chamber is in a stable state; and said dummy processing
step includes a dummy processing omitting step of omitting the
execution of the dummy processing when it is determined in said
stability determining step that the interior of the process chamber
is in the stable state.
19. A substrate processing method as claimed in claim 18, wherein
when a standing time over which the process chamber is left
standing and counting of which is started from a time count start
reference time set to an execution end time of the predetermined
processing has not exceeded a predetermined time period, it is
determined in said stability determining step that the interior of
the process chamber is in the stable state.
20. A substrate processing method as claimed in claim 19, wherein
the determination in said determining step is performed based on
preset dummy processing execution requirements or dummy processing
non-execution requirements, the dummy processing non-execution
requirements including a condition that the standing time does not
exceed the predetermined time period.
21. A substrate processing method as claimed in claim 20, wherein
the dummy processing non-execution requirements include a condition
that the non-product substrate does not exist.
22. A substrate processing method as claimed in claim 20, wherein
the dummy processing non-execution requirements include a condition
that execution of the dummy processing on the non-product substrate
before execution of the predetermined processing on the substrate
is not designated.
23. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that it is configured such that omission of execution of the dummy
processing in said dummy processing omitting step is disabled.
24. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that the process chamber is in an off-line state.
25. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that the substrate is a first substrate to be processed after power
of the substrate processing apparatus is turned on.
26. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that a substrate processed before the substrate was processed in an
off-line state.
27. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that the substrate is a first substrate to be processed after
execution of maintenance of the process chamber.
28. A substrate processing method as claimed in claim 20, wherein
the dummy processing execution requirements include a condition
that abort processing for forcibly terminating processing being
executed was executed on a substrate which was being processed
immediately before processing of the substrate.
29. A substrate processing method as claimed in claim 18, wherein
when it is determined in said stability determining step that the
interior of the process chamber is not in the stable state, the
dummy processing is carried out once in said dummy processing
step.
30. A substrate processing method as claimed in claim 18, wherein
processing time of the dummy processing carried out once is longer
than processing time of the predetermined processing to be carried
out on the substrate.
31. A substrate processing method as claimed in claim 18, wherein a
set value of power required for the dummy processing to be carried
out once is higher than a set value of power required for the
predetermined processing to be carried out on the substrate.
32. A substrate processing method as claimed in claim 18, wherein
said determining step comprises performing determination for each
substrate lot including the substrate.
33. A substrate processing method as claimed in claim 18,
comprising an abort processing setting step of allowing setting to
be made as to whether or not the abort processing is to be executed
on the substrate, after abort processing for forcibly terminating
processing being executed was executed on a substrate which was
being processed immediately before processing of the substrate.
34. A substrate processing method as claimed in claim 18,
comprising a log recording step of recording a log indicative of
whether or not execution of the dummy processing was omitted.
35. A program for causing a computer to execute a substrate
processing method for a substrate processing apparatus including at
least one process chamber in which predetermined processing is
carried out on a substrate as an object to be processed,
comprising: a dummy processing module for carrying out dummy
processing on a non-product substrate; and a determining module for
determining whether or not the dummy processing is to be executed,
wherein: said determining module includes a stability determining
module for determining whether or not an interior of the process
chamber is in a stable state; and said dummy processing module
includes a dummy processing omitting module for omitting the
execution of the dummy processing when said stability determining
module determines that the interior of the process chamber is in
the stable state.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a substrate processing
apparatus, a substrate processing method, and a program for
implementing the method, and more particularly to a substrate
processing apparatus and a substrate processing method which are
capable of carrying out dummy processing, and a program for
implementing the method.
[0003] 2. Description of the Related Art
[0004] In a plasma process for manufacturing semiconductor chips,
etching on thin films and CVD (Chemical Vapor Deposition) which
deposits a metal on the etched thin films are carried out, by
utilizing interaction between plasma and the inner wall of a
vessel. In the vessel, large energy is applied e.g. by high
frequency waves, so that the interaction between plasma and the
vessel inner wall causes the following serious problem:
[0005] The plasma CVD grows a thin film on a substrate, but the
thin film is also deposited on the vessel inner wall as well. On
the other hand, the etching process shaves off the film formed on
the substrate by subjecting the same to a chemical reaction, so
that reaction products are decomposed by plasma and deposit on the
vessel inner wall. As the plasma process is continued, the vessel
inner wall is contaminated as described above, which adversely
affects chemical reactions in plasma and degrades reproducibility
of the process.
[0006] Therefore, in mass production plants, a vacuum vessel
provided in a semiconductor chip manufacturing apparatus (substrate
processing apparatus) is periodically cleaned so as to enhance the
availability or rate of operation of the apparatus. In addition, a
seasoning (aging) process is carried out after cleaning so as to
maintain the inner wall of the vacuum vessel in a predetermined
condition. To carry out the seasoning and warming-up of the
apparatus, as well as to establish processing conditions for
substrates included in one lot, the semiconductor chip
manufacturing apparatus is provided with a function of carrying out
dummy processing on a non-product substrate before execution of
product processing including the plasma process.
[0007] Conventionally, to prevent occurrence of human operating
errors, the dummy processing is carried out by an automatic process
in which timing for the dummy processing and that for the product
processing are collectively managed as a single sequence by on-line
control.
[0008] In a first method for carrying out the above-mentioned
automatic process, a dummy recipe for the dummy processing is
linked to (registered in) a recipe for the product processing
(which will be referred to as "the dummy processing recipe-linking
function"), whereby the dummy processing is carried out on a
non-product substrate before each execution of the product
processing on a substrate lot (see e.g. Japanese Laid-Open Patent
Publication (Kokai) No. 2001-176763).
[0009] In a second method for carrying out the automatic process,
time intervals at which the cleaning is periodically performed are
determined based on a process chamber operating parameter, such as
a cumulative time period of RF (radio frequency) power discharge in
a process chamber, which is set by a maintenance and management
function, or the number of processed substrates (see e.g. U.S. Pat.
No. 6,168,672).
[0010] In the above-mentioned first and second methods for the
automatic process, however, even when the processing atmosphere in
(i.e. the status of the interior of) the process chamber is stable
as in the case of the product processing being continuously
executed on substrate lots under the same processing conditions, a
non-product substrate is subjected to the dummy processing whenever
a substrate lot is subjected to the product processing or
periodically, which causes not only wasteful use of non-product
substrates, but also a decrease in throughput (processing
capability) and hence degraded productivity in manufacturing
product substrates.
[0011] Further, when the processing atmosphere in (i.e. the status
of the interior of) the process chamber is unstable, it is
necessary to carry out dummy processing repeatedly.
SUMMARY OF THE INVENTION
[0012] It is an object of the present invention to provide a
substrate processing apparatus and a substrate processing method
which are capable of enhancing productivity in manufacturing
product substrates, and a program for implementing the method.
[0013] To attain the above object, in a first aspect of the present
invention, there is provided a substrate processing apparatus
comprising at least one process chamber in which predetermined
processing is carried out on a substrate as an object to be
processed, dummy processing means for carrying out dummy processing
on a non-product substrate, and determining means for determining
whether or not the dummy processing is to be executed, wherein the
determining means includes stability determining means for
determining whether or not an interior of the process chamber is in
a stable state, and the dummy processing means includes dummy
processing omitting means for omitting execution of the dummy
processing when the stability determining means determines that the
interior of the process chamber is in the stable state.
[0014] With the arrangement of the first aspect of the present
invention, when it is determined that the status of the interior of
the process chamber is stable, execution of the dummy processing is
omitted, which contributes to enhancement of productivity in
manufacturing product substrates.
[0015] Preferably, when a standing time over which the process
chamber is left standing and counting of which is started from a
time count start reference time set to an execution end time of the
predetermined processing has not exceeded a predetermined time
period, the stability determining means determines that the
interior of the process chamber is in the stable state.
[0016] More preferably, the determining means performs the
determination based on preset dummy processing execution
requirements or dummy processing non-execution requirements, the
dummy processing non-execution requirements including a condition
that the standing time does not exceed the predetermined time
period.
[0017] Further preferably, the dummy processing non-execution
requirements include a condition that the non-product substrate
does not exist.
[0018] Further preferably, the dummy processing non-execution
requirements include a condition that execution of the dummy
processing on the non-product substrate before execution of the
predetermined processing on the substrate is not designated.
[0019] Further preferably, the dummy processing execution
requirements include a condition that it is configured such that
omission of execution of the dummy processing by the dummy
processing omitting means is disabled.
[0020] Further preferably, the dummy processing execution
requirements include a condition that the process chamber is in an
off-line state.
[0021] Further preferably, the dummy processing execution
requirements include a condition that the substrate is a first
substrate to be processed after power of the substrate processing
apparatus is turned on.
[0022] Further preferably, the dummy processing execution
requirements include a condition that a substrate processed before
the substrate was processed in an off-line state.
[0023] Further preferably, the dummy processing execution
requirements include a condition that the substrate is a first
substrate to be processed after execution of maintenance of the
process chamber.
[0024] Further preferably, the dummy processing execution
requirements include a condition that abort processing for forcibly
terminating processing being executed was executed on a substrate
which was being processed immediately before processing of the
substrate.
[0025] Preferably, when the stability determining means determines
that the interior of the process chamber is not in the stable
state, the dummy processing means carries out the dummy processing
once.
[0026] More preferably, processing time of the dummy processing
carried out once is longer than processing time of the
predetermined processing to be carried out on the substrate.
[0027] More preferably, a set value of power required for the dummy
processing to be carried out once is higher than a set value of
power required for the predetermined processing to be carried out
on the substrate.
[0028] Preferably, the determining means performs the determination
for each substrate lot including the substrate.
[0029] Preferably, the substrate processing apparatus comprises
abort processing setting means for allowing setting to be made as
to whether or not the abort processing is to be executed on the
substrate, after abort processing for forcibly terminating
processing being executed was executed on a substrate which was
being processed immediately before processing of the substrate.
[0030] Preferably, the substrate processing apparatus comprises log
recording means for recording a log indicative of whether or not
execution of the dummy processing was omitted.
[0031] To attain the above object, in a second aspect of the
present invention, there is provided a substrate processing method
for a substrate processing apparatus including at least one process
chamber in which predetermined processing is carried out on a
substrate as an object to be processed, comprising a dummy
processing step of carrying out dummy processing on a non-product
substrate, and a determining step of determining whether or not the
dummy processing is to be executed, wherein the determining step
includes a stability determining step of determining whether or not
an interior of the process chamber is in a stable state, and the
dummy processing step includes a dummy processing omitting step of
omitting the execution of the dummy processing when it is
determined in the stability determining step that the interior of
the process chamber is in the stable state.
[0032] Preferably, when a standing time over which the process
chamber is left standing and counting of which is started from a
time count start reference time set to an execution end time of the
predetermined processing has not exceeded a predetermined time
period, it is determined in the stability determining step that the
interior of the process chamber is in the stable state.
[0033] More preferably, the determination in the determining step
is performed based on preset dummy processing execution
requirements or dummy processing non-execution requirements, the
dummy processing non-execution requirements including a condition
that the standing time does not exceed the predetermined time
period.
[0034] Further preferably, the dummy processing non-execution
requirements include a condition that the non-product substrate
does not exist.
[0035] Further preferably, the dummy processing non-execution
requirements include a condition that execution of the dummy
processing on the non-product substrate before execution of the
predetermined processing on the substrate is not designated.
[0036] Further preferably, the dummy processing execution
requirements include a condition that it is configured such that
omission of execution of the dummy processing in the dummy
processing omitting step is disabled.
[0037] Further preferably, the dummy processing execution
requirements include a condition that the process chamber is in an
off-line state.
[0038] Further preferably, the dummy processing execution
requirements include a condition that the substrate is a first
substrate to be processed after power of the substrate processing
apparatus is turned on.
[0039] Further preferably, the dummy processing execution
requirements include a condition that a substrate processed before
the substrate was processed in an off-line state.
[0040] Further preferably, the dummy processing execution
requirements include a condition that the substrate is a first
substrate to be processed after execution of maintenance of the
process chamber.
[0041] Further preferably, the dummy processing execution
requirements include a condition that abort processing for forcibly
terminating processing being executed was executed on a substrate
which was being processed immediately before processing of the
substrate.
[0042] Preferably, when it is determined in the stability
determining step that the interior of the process chamber is not in
the stable state, the dummy processing is carried out once in the
dummy processing step.
[0043] More preferably, processing time of the dummy processing
carried out once is longer than processing time of the
predetermined processing to be carried out on the substrate.
[0044] More preferably, a set value of power required for the dummy
processing to be carried out once is higher than a set value of
power required for the predetermined processing to be carried out
on the substrate.
[0045] Preferably, the determining step comprises performing
determination for each substrate lot including the substrate.
[0046] Preferably, the substrate processing method comprises an
abort processing setting step of allowing setting to be made as to
whether or not the abort processing is to be executed on the
substrate, after abort processing for forcibly terminating
processing being executed was executed on a substrate which was
being processed immediately before processing of the substrate.
[0047] Preferably, the substrate processing method comprises a log
recording step of recording a log indicative of whether or not
execution of the dummy processing was omitted.
[0048] To attain the above object, in a third aspect of the present
invention, there is provided a program for causing a computer to
execute a substrate processing method for a substrate processing
apparatus including at least one process chamber in which
predetermined processing is carried out on a substrate as an object
to be processed, comprising a dummy processing module for carrying
out dummy processing on a non-product substrate, and a determining
module for determining whether or not the dummy processing is to be
executed, wherein the determining module includes a stability
determining module for determining whether or not an interior of
the process chamber is in a stable state, and the dummy processing
module includes a dummy processing omitting module for omitting the
execution of the dummy processing when the stability determining
module determines that the interior of the process chamber is in
the stable state.
[0049] The above and other objects, features, and advantages of the
invention will become more apparent from the following detailed
description taken in conjunction with the accompanying
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0050] FIG. 1 is a block diagram schematically showing the
arrangement of a substrate processing system including a substrate
processing apparatus according to an embodiment of the present
invention;
[0051] FIG. 2 is a top view schematically showing the arrangement
of an etching apparatus appearing in FIG. 1;
[0052] FIG. 3 is a view useful in explaining a product processing
recipe registered in advance in a host computer appearing in FIG.
1;
[0053] FIG. 4 is a view useful in explaining a transfer recipe
registered in advance in the host computer appearing in FIG. 1;
[0054] FIG. 5 is a view useful in explaining dummy processing for
which settings can be made via a screen displaying the transfer
recipe in FIG. 4;
[0055] FIG. 6 is a view of a start confirmation screen displayed on
a display screen of the host computer in FIG. 1 before starting the
transfer of a substrate lot to be subjected to product
processing;
[0056] FIG. 7 is a view useful in explaining detailed requirements
for execution of the dummy processing configured as explained with
reference to FIG. 5;
[0057] FIG. 8 is a flowchart of a substrate processing control
process executed by the host computer in FIG. 1;
[0058] FIG. 9A is a view showing an example of a process log
recorded in the host computer;
[0059] FIG. 9B is a fragmentary view showing an example of a dummy
process log as a result of execution of dummy processing on
non-product substrates;
[0060] FIG. 10 is a flowchart showing details of dummy processing
executed in a step S809 in FIG. 8;
[0061] FIG. 11 is a view schematically showing the arrangement of a
first variation of the substrate processing apparatus according to
the embodiment; and
[0062] FIG. 12 is a view schematically showing the arrangement of a
second variation of the substrate processing apparatus according to
the embodiment.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0063] The present invention will now be described in detail with
reference to the drawings showing a preferred embodiment
thereof.
[0064] FIG. 1 is a block diagram schematically showing the
arrangement of a substrate processing system including a substrate
processing apparatus according to an embodiment of the present
invention.
[0065] The substrate processing system 1000 shown in FIG. 1 is
comprised of at least one etching apparatus 100 as a substrate
processing apparatus, an auto guided vehicle (AGV) for conveying a
cassette, referred to hereinafter, containing semiconductor
substrates (hereinafter simply referred to as "substrates") to the
etching apparatus 100, and a host computer 200 connected to the AGV
and the etching apparatus 100 via a network.
[0066] A transfer recipe, a product processing recipe, and a dummy
processing recipe, all of which will be described in detail
hereinafter, are registered in advance as programs in the host
computer 200, and based on unattended control by the on-line host
computer 200, the etching apparatus 100 automatically carries out
operations for transferring non-product substrates for dummy
processing, substrates to be subjected to product processing, and
substrates already subjected to product processing, and steps of
dummy processing, described in detail hereinafter, and steps of
etching (product processing), also described in detail
hereinafter.
[0067] FIG. 2 is a top view schematically showing the arrangement
of the etching apparatus 100 appearing in FIG. 1.
[0068] As shown in FIG. 2, the etching apparatus 100 is comprised
of cassette chambers (C/C) 101 and 102 on each of which a cassette
transferred from the AGV is placed, a transfer chamber (T/C) 104
adjacent to the cassette chambers 101 and 102 and having a turning
arm 103, referred to hereinafter, mounted therein, a pre-alignment
section (P/A) 105 adjacent to the transfer chamber 104, and process
chambers (P/C) 106 and 107 adjacent to the transfer chamber
104.
[0069] Each cassette contains substrates (W) including non-product
substrates for dummy processing as well as substrates to be
subjected to product processing and substrates already subjected to
product processing. The cassette contains three non-product
substrates, for example, on its lowermost stage. The turning arm
103 in the transfer chamber 104 is disposed such that it can
transfer substrates one by one between the cassette chambers 101
and 102, the pre-alignment section 105, and the process chambers
106 and 107.
[0070] In each of the process chambers 106 and 107, plasma is
generated under a vacuum processing atmosphere, based on the
product processing recipe preset in the host computer 200. The
plasma can be generated by applying radio frequency (RF) power
between upper and lower electrode plates provided parallel to each
other in the process chamber 106 (107).
[0071] The etching apparatus 100 carries out etching on substrates
under the processing atmosphere containing the plasma generated in
the process chambers 106 and 107, based on etching conditions
described in detail hereinafter. The dummy processing is carried
out for stabilization of the processing atmosphere, particularly,
temperature and pressure, before execution of etching on the
substrates, or for test operation or warming up of the apparatus,
or for cleaning and seasoning (aging) after the cleaning. The dummy
processing is also executed so as to establish processing
conditions for a substrate lot contained in the cassette.
[0072] FIG. 3 is a view useful in explaining the product processing
recipe registered in advance in the host computer 200 in FIG.
1.
[0073] As shown in FIG. 3, the product processing recipe is set in
the host computer 200 via a display screen of the host computer 200
and linked to (registered in) the transfer recipe described in
detail hereinafter. Product processing recipes are provided in
association with respective ones of the process chambers 106 and
107, and detailed etching conditions and the like are entered in
the recipe. The etching conditions include a processing time period
of etching (main step), values of the supply flow rates of process
gases, such as a carbon fluoride (CF) gas, a fluorinated
hydrocarbon (CHF) gas, a hydrobromine (HBr) gas, a chlorine
(Cl.sub.2) gas, an argon (Ar) gas, a carbon monoxide (CO) gas, and
an oxygen (O.sub.2) gas, mixture ratios of process gases, values of
pressure in the process chambers, the distance between the upper
electrode plate and the lower electrode plate, a value of electric
power to be applied to the upper and lower electrode plates,
residence timer representative of an evacuation time period,
substrate temperature, and so forth.
[0074] In the following, a description will be given of a substrate
transfer operation carried out by the etching apparatus 100. This
substrate transfer operation is carried out based on the transfer
recipe preset in the host computer 200.
[0075] First, the turning arm 103 transfers a substrate to be
subjected to product processing or a non-product substrate for
dummy processing to the pre-alignment section 105 from a cassette
containing the substrates. The substrate has an orientation flat
thereof, i.e. a flat outer peripheral surface thereof aligned
(positioned) in the pre-alignment section 105, and is then
transferred into one of the process chambers 106 and 107. An etched
substrate is transferred into a cassette in a designated one of the
cassette chambers 101 and 102, e.g. at the same position as the
storage position where the substrate was stored before the
processing.
[0076] FIG. 4 is a view useful in explaining the transfer recipe
registered in advance in the host computer 200 in FIG. 1.
[0077] As shown in FIG. 4, transfer recipes are provided in
association with respective ones of the cassette chambers 101 and
102, and designations are made in the host computer 200 via the
display screen of the host computer 200. For example, in the
transfer recipe, designations are made as to whether a substrate to
be transferred by the turning arm 103 is a substrate for product
processing or a non-product substrate for dummy processing, whether
a cassette to or from which a substrate is to be transferred is one
in the cassette chamber 101 or one in the cassette chamber 102,
whether a process chamber to which a substrate is to be transferred
is the process chamber 106 or the process chamber 107, and so
forth.
[0078] FIG. 5 is a view useful in explaining dummy processing for
which settings can be made via a screen displaying the transfer
recipe in FIG. 4.
[0079] As shown in FIGS. 4 and 5, a link button 400 for enabling a
change in the settings of dummy processing is provided on the
screen of the host computer 200 displaying the transfer recipe, and
therefore, by operating the link button 400, it is possible to set
whether or not to carry out dummy processing, and to set the number
of non-product substrates to be used for the dummy processing
(dummy processing recipe-linking function). Since the screen
displaying the transfer recipe is provided with the link button
400, the settings of the dummy processing recipe as well as those
of the transfer recipe can be easily changed so as to prevent
occurrence of human operating errors.
[0080] If execution of dummy processing is selected on the display
screen in FIG. 5, the dummy processing is carried out on a
designated number of non-product substrates that has been set,
before execution of etching on a substrate lot contained in the
associated cassette.
[0081] Further, it is possible to further configure or set detailed
requirements for execution of the dummy processing set on the
display screen in FIG. 5 (see FIG. 7).
[0082] FIG. 6 is a view of a start confirmation screen displayed on
the display screen of the host computer 200 in FIG. 1 before the
start of transfer of a substrate lot to be subjected to product
processing.
[0083] As shown in FIG. 6, also on the present start confirmation
screen, the setting as to whether to carry out the preset dummy
processing can be changed (lot stabilizing dummy processing
function). Further, the settings of the dummy processing that have
already been made can also be changed. This makes it possible to
prevent occurrence of human operating errors, such as a careless
omission of setting of the dummy processing, an error in inputting
a set value, or an error in selecting an option (button).
[0084] FIG. 7 is a view useful in explaining the detailed
requirements for execution of the dummy processing set on the
display screen in FIG. 5.
[0085] Using the display screen of the host computer 200, shown in
FIG. 7, it is possible to change preset values of configuration
parameters of the etching apparatus 100. The preset values of the
configuration parameters can be changed during idle time of the
process chambers 106 and 107 of the etching apparatus 100.
[0086] The detailed requirements for execution of the dummy
processing are determined by changing the preset value of a
parameter 600, i.e. a "chamber standing time" as a time period over
which each of the process chambers 106 and 107 is left standing,
which is included in the items of the configuration parameters.
[0087] The initial set value of the parameter 600 is a time period
"00: 00: 00". When the time period "00: 00: 00" is set, the host
computer 200 controls the etching apparatus 100 such that dummy
processing is carried out on a non-product substrate before
execution of each etching on a substrate lot, as in the case of the
conventional dummy processing.
[0088] When a predetermined time period is entered as a set value
of the parameter 600, the host computer 200 counts the entered
predetermined time period starting from a time count start
reference time set to the execution end time of the main step, i.e.
etching executed on a substrate lot. When the predetermined time
period has elapsed, dummy processing is carried out on a
non-product substrate before execution of each etching on a
substrate lot, as in the case of the conventional dummy processing.
On the other hand, when execution of etching on a following
substrate lot to be processed next (hereinafter referred to "the
following substrate lot") is started before the lapse of the
predetermined time period, the dummy processing, which should
otherwise have been executed as in the case of the conventional
dummy processing, is omitted (dummy processing-improving
function).
[0089] It is preferable that the lower limit value of the parameter
600 is set e.g. to approximately fifteen minutes except when set to
the time period "00: 00: 00" indicative of disabling of the dummy
processing-improving function. When the lower limit value of the
parameter 600 is set to approximately fifteen minutes, it is
possible to set the chamber standing time to a time period longer
than the time interval between successive lot transfers. The
chamber standing time can be set to a shorter time period (e.g. one
second) than the time interval between successive lot transfers,
but when substrate lots are successively transferred, dummy
processing is carried out on non-product substrates without
activating the dummy processing-improving function.
[0090] The upper limit of the set value of the parameter 600 is
preferably a time period over which the processing atmosphere,
particularly stability of temperature and pressure thereof, can be
maintained in a process chamber used by the user for product
processing on an immediately preceding substrate lot (hereinafter
referred to as "the preceding substrate lot"), e.g. approximately
three hours, and more preferably, approximately one hour. In other
words, the upper limit value of the parameter 600 is empirically
determined, and therefore it may be determined based on not only
temperature and pressure, but also a time period over which product
processing is carried out on the preceding substrate lot, the etch
rate, selection ratio, uniformity, and so forth of the product
processing.
[0091] More specifically, whether or not the dummy processing
described above needs to be executed is determined as follows.
[0092] FIG. 8 is a flowchart of a substrate processing control
process executed by the host computer 200 in FIG. 1.
[0093] As shown in FIG. 8, first, it is determined in a step S800
whether or not there is a non-product substrate contained in a
cassette. If there is a non-product substrate, it is determined
whether or not execution of dummy processing on the non-product
substrate before execution of etching on the substrate lot
contained in the cassette is designated (step S801). If there is no
non-product substrate, or if execution of dummy processing is not
designated, the process proceeds to a step S810, referred to
hereinafter.
[0094] If it is determined in the step S801 that execution of dummy
processing is designated, it is determined whether or not the dummy
processing-improving function is disabled (step S802). More
specifically, it is determined whether or not the value of the
parameter 600 is set to "00: 00: 00". If the dummy
processing-improving function is enabled, i.e. if the value of the
parameter 600 is not set to "00: 00: 00", it is determined whether
or not the process chambers 106 and 107 are on line (i.e. whether
or not the process chambers 106 and 107 are connected to the host
computer 200) (step S803). If the process chambers 106 and 107 are
on line, it is determined whether or not it is after the electric
power has been switched from the OFF state to the ON state, and
before the start of execution of etching on a first substrate of a
first substrate lot to be processed after power-on (step S804).
[0095] If it is determined in the step S804 that the present
substrate is not a first substrate of a first lot after power-on,
it is determined whether or not the preceding substrate lot was
subjected to etching in the off-line state (step S805). If the
preceding substrate lot was subjected to etching in the on-line
state, it is determined whether or not there is a substrate
subjected to etching or a non-product substrate subjected to dummy
processing after execution of maintenance of the process chambers
(P/C) 106 and 107 (step S806). If there is a substrate subjected to
etching or a non-product substrate subjected to dummy processing
after execution of the maintenance, it is determined whether or not
the preceding substrate lot was aborted by an abort function (step
S807). The abort function forcibly terminates substrate transfer or
execution of etching when an error occurs during execution of
etching on one of substrate lots continuously transferred. In the
case where a plurality of substrate lots are continuously
transferred, when a preceding substrate lot is aborted, the
following substrate lot is also aborted automatically.
[0096] If it is determined in the step S807 that no substrate lot
was aborted, the process proceeds to a step S808, wherein it is
determined whether or not a predetermined time period set as the
parameter 600, i.e. "the chamber standing time" has elapsed (timed
out) after the execution end time of the main step (etching)
executed on the preceding substrate lot, which is set as the time
count start reference time.
[0097] It should be noted that before the start of the counting of
the chamber standing time in the step S808, the product processing
recipe is executed, so that the count of a timer, not shown, is
first set to "0" when RF power is applied to the upper electrode
plate and the lower electrode plate, and then the set count of the
timer is held at "0" during execution of the main step (see FIG. 3,
e.g. STEPS 1 to 24 (in FIG. 3, only STEPS 1 to 6 are shown). The
holding of the count is canceled immediately when the main step is
completed. After cancellation of the holding of the timer count at
"0", when re-execution processing is carried out for re-executing
the main step, RF power is applied again, and the timer count is
reset to "0", whereas when the abort processing is executed for
forcible termination, i.e. interruption, of the main step, the
timer count is not reset to "0".
[0098] If it is determined in the steps S802 to S808 that any of
the requirements for execution of the dummy processing is
satisfied, i.e. the dummy processing-improving function is disabled
(YES to the step S802); the process chambers 106 and 107 are in the
off-line state (NO to the step S803); the present substrate lot is
the first lot after power-on (YES to the step S804); the preceding
substrate lot was subjected to etching in the off-line state (YES
to the step S805); there is no substrate subjected to etching after
the P/C maintenance (YES to the step S806); the preceding substrate
lot was aborted (YES to the step S807); or the chamber standing
time has elapsed, at least one non-product substrate is subjected
to the dummy processing, as described in detail hereinafter with
reference to FIG. 10, in a step S809, and the process proceeds to
the step S810. In the step S810, the substrates included in the
substrate lot are all subjected to product processing (etching),
followed by terminating the process. Thus, after occurrence of an
irregular situation where dummy processing should be executed,
dummy processing is carried out on one to three non-product
substrates before each execution of product processing in the step
S810. As a result, the processing atmosphere in each of the process
chambers 106 and 107 can be reliably stabilized.
[0099] On the other hand, if it is determined in the step S808 that
the chamber standing time has not elapsed, which means that the
processing atmosphere within a process chamber used for etching the
preceding substrate lot is held in a stable state, the dummy
processing in the step S809 is skipped (omitted), and the process
proceeds to the step S810. In the step S810, the substrates
included in the substrate lot are all subjected to etching (product
processing), followed by terminating the present process.
[0100] According to the process in FIG. 8, when the chamber
standing time has not elapsed (NO to the step S808), the dummy
processing in the step S809 is omitted, judging that the process
chamber used for etching the preceding substrate lot has been kept
stable, and the substrates in the substrate lot are subjected to
etching (step S810). As a result, it is possible not only to reduce
consumption of non-product substrates, but also to enhance
productivity in manufacturing product substrates.
[0101] If it is determined in the steps S804 to S808 that at least
one of the process chambers 106 and 107 corresponds to the
affirmative answer "YES", the process proceeds to the step
S809.
[0102] It is preferable that the steps S800 to S808 in FIG. 8 are
executed in a state where transfer of a first substrate in a
substrate lot can be started.
[0103] In the following, a description will be given of a first
variation of the substrate processing method according to the
present embodiment.
[0104] In the present variation, the substrate processing system is
configured such that it is possible to set whether or not the
following substrate lot is to be automatically aborted, which is
determined in the abort processing in the step S807. More
specifically, this setting can be made according to configuration
parameters which can be changed by the host computer 200, and
whether or not a preceding substrate lot and the following
substrate lot were aborted is recorded in a process log as a log of
the whole process (see FIG. 9A, with reference to which a detailed
description will be given hereinafter).
[0105] Therefore, even when a preceding substrate lot and the
following substrate lot are subjected to product processing via the
common transfer chamber 104 (see FIG. 2), it is possible to
configure such that the product processing is to be carried out
without automatic execution of abort processing on the following
substrate lot. In this case, it is determined in the step S807 that
the preceding substrate lot was aborted, and the dummy processing
is executed whenever the answer to the question of the step S807 is
affirmative, so that it is possible to dispense with the step S808
in which whether or not the dummy processing should be executed is
determined based on the chamber standing time (parameter 600
"chamber standing time" forcible termination option).
[0106] In the following, a description will be given of a second
variation of the substrate processing method according to the
present embodiment.
[0107] In the present variation, the result of dummy processing
executed on a non-product substrate is recorded in the host
computer 200, as a process log as a log of the whole process, or as
a dummy process log.
[0108] FIG. 9A is a view showing an example of the process log
recorded in the host computer 200, and FIG. 9B is a fragmentary
view showing an example of the dummy process log as the result of
dummy processing executed on a non-product substrate.
[0109] In the process log an example of which is shown in FIG. 9A,
operations of the whole process are recorded on a lot-by-lot basis,
and whether or not the abort processing was executed and whether or
not there is a substrate subjected to error processing (error
substrate) are displayed in the leftmost column of the process log.
For example, when abort processing was executed, a mark
".box-solid." is displayed, and when abort processing was not
executed, a mark ".largecircle." is displayed. Further, when there
was no error substrate, the mark ".largecircle." is displayed, and
when there was an error substrate, a mark ".tangle-soliddn." is
displayed. That is, when processing was normally terminated, the
mark ".largecircle." is displayed. In the FIG. 9A example, only the
mark ".largecircle." is displayed for all jobs, since the
processing was normally terminated for all the jobs.
[0110] In FIG. 9A, substrate lots to which a name including "-ST"
is given are substrate lots of non-product substrates subjected to
dummy processing based on the dummy processing recipe-linking
function or the lot stabilizing dummy processing function. Further,
substrate lots to which a name including "-PL" is given are
substrate lots of non-product substrates subjected to dummy
processing based on a plasma cleaning recipe-linking function.
[0111] If a substrate (wafer)-listing button is depressed in the
state of a substrate lot being selected on a display screen in FIG.
9A, the screen is switched to a display screen shown in FIG.
9B.
[0112] FIG. 9B is a display screen for listing substrates of a
substrate lot whose lot name includes "-ST", when the substrate lot
is selected. As shown in FIG. 9B, dummy slot numbers "-Dx"
different from each other are given to three non-product
substrates, so as to enable the user to visually recognize which
non-product substrate was subjected to dummy processing or which
non-product substrate execution of dummy processing was omitted
for. This makes it possible to collect log information from the
process log and the dummy process log e.g. when a trouble occurs in
the etching apparatus 100.
[0113] In recent years, with miniaturization of portions of
semiconductor devices to be processed, there is a demand for a
plasma etching apparatus which has an excellent CD (Critical
Dimension) controllability and a stable processing performance. For
example, to manufacture semiconductor devices with the line width
of wiring formed on an dielectric film on a substrate being
approximately 90 nm, etching for dielectric films is demanded of
(1) advanced HARC (High Aspect Ratio Contact) control for etching
linear grooves with an aspect ratio of 20 or more, (2) advanced CD
control with argon fluoride (ArF) and hard mask etching for gates,
and (3) high processing capability of processing low-k material
(dielectric constant k of not more than 2.5) for a damascene
process for embedding a metal in a desired portion of a substrate
in a chip manufacturing process. These requirements are becoming
more and more demanding, and the above-mentioned line width is
required to be not more than 65 nm, for example.
[0114] Therefore, it is necessary for the plasma etching apparatus
to control temperature more delicately by more highly advanced
technology than the conventional plasma etching apparatuses and
stably maintain the controlled temperature to thereby enhance
stability of the processing atmosphere within the process chambers
for achievement of more excellent CD controllability. For example,
to etch substrates having a diameter of 300 mm with a line width of
approximately 90 nm, an atmosphere temperature within the process
chamber is required to be kept stable within a range of 115 to
121.degree. C.
[0115] Normally, two or three non-product substrates are used to
stabilize the atmosphere temperature. In other words, it is
necessary to carry out dummy processing two or three times. This is
because the temperature within the process chamber reaches no
higher than 104 to 110.degree. C. after one-time execution of dummy
processing, and consequently the atmosphere temperature is
unstable, which causes a few first processed substrates of a
substrate lot subjected to the following product processing to be
out of or fail to satisfy the specification for product
substrates.
[0116] In an attempt to solve this problem, the present inventors
made assiduous studies and found that even one-time execution of
dummy processing can enhance stability of the atmosphere
temperature by providing operation modes for dummy processing, i.e.
a long-time mode and a high-power mode, described in detail
hereinafter, by changing part of the configuration of a step most
contributing to stability of the atmosphere temperature in the
normal dummy processing recipe (normal mode of dummy processing)
similar to the product processing recipe, i.e. the main step in
which processing is carried out at the highest temperature, and
causing the etching apparatus 100 to execute the dummy processing
in the step S809 in at least one of the operation modes. This makes
it possible to reduce not only the number of executions of dummy
processing, i.e. time required for dummy processing, but also the
number of non-product substrates or substrates out of the
specification in product processing, which contributes to
improvement of throughput and resulting enhancement of the
productivity of the etching apparatus 100.
[0117] In the long-time mode, processing time in the main step
(etching) is made longer than in the normal mode. For example,
processing time in the main step, which is set to five minutes in
the normal mode of dummy processing, is changed to seven minutes in
the long-time mode.
[0118] It is preferable that for the long-time mode, the processing
time in the main step is set to a time period determined
empirically or experimentally in advance according to the diameter
of the substrate and/or the kinds of process gases. Alternatively,
the processing time may be determined according to the processing
atmosphere, for example, temperatures of the center, middle, and
peripheral edge of the process chamber 106 (107), for example,
which are measured by a cleaning plate, not shown, mounted to the
upper electrode. If the processing time is set to too long a time
period, energy is consumed wastefully, and therefore, it is
preferable to set the same within a range between a normal time
period and twice the same.
[0119] In the high-power mode, power applied in the main step to
generate RF power is increased to a higher level than in the normal
mode.
[0120] It is preferable that for the high-power mode, the value of
the RF power is determined empirically or experimentally in
advance, as in the case of the long-time mode, according to the
diameter of the substrate and/or the kinds of process gases.
Alternatively, the set value of the RF power may be determined
according to the processing atmosphere. If the set value of the RF
power is too high, energy is consumed wastefully, and therefore, it
is preferable to set the same within a range between a normal level
and twice the same.
[0121] FIG. 10 is a flowchart showing details of the dummy
processing executed in the step S809 in FIG. 8.
[0122] As shown in FIG. 10, first, it is determined in a step S1001
whether or not the operation mode for dummy processing should be
changed. As described above, the operation modes for dummy
processing include the high-power mode and the long-time mode in
addition to the normal mode in which the same processing as the
product processing executed in the step S810 is carried out as
dummy processing. The normal mode is set as a standard operation
mode to be normally selected.
[0123] It is preferable that the mode change to the high-power mode
or the long-time mode in the step S1001 is carried out when the
processing atmosphere within the process chamber is not stable,
e.g. when the parameter 600 in FIG. 7, i.e. the "chamber standing
time" is set to not shorter than one hour and the chamber standing
time has elapsed in the step S808. Further, it is preferable that
the mode change to the high-power mode or the long-time mode is
carried out when high stability of the processing atmosphere is
required, e.g. when the diameter of a substrate to be processed is
not less than 300 mm, or when the line width with which the
substrate is to be etched is not more than 90 nm.
[0124] If the operation mode for dummy processing should be changed
(YES to the step S1001), a desired one of the high-power mode and
the long-time mode is selected (YES to a step S1002 or S1003, and a
step S1004), and the process proceeds to a step S1005. In the step
S1005, it is determined whether or not the selected one of the
high-power mode and the long-time mode should be set as the
standard operation mode. If the selected mode should be set as the
standard operation mode, the process proceeds to a step S1006,
whereas if the selected mode should not be set as the standard
operation mode, the process skips over the step S1006 to a step
S1007.
[0125] On the other hand, if the operation mode should not be
changed (NO to the step S1001), or if neither the high-power mode
nor the long-time mode has been selected (NO to the steps S1002 and
S1003), the normal mode as the standard operation mode is selected
(step S1006), and the process proceeds to the step S1007. Further,
if one of the high-power mode and the long-time mode has been set
as the standard operation mode (YES to the step S1002 or S1003, and
YES to the step S1005), the operation mode for dummy processing,
set as the standard operation mode, is selected (step S1006), and
the process proceeds to the step S1007.
[0126] In the step S1007, dummy processing is carried out on at
least one non-product substrate in the selected operation mode for
dummy processing. More specifically, if the selected operation mode
is either the high-power mode or the long-time mode, dummy
processing is carried out on only one non-product substrate in the
selected operation mode, whereas if the selected operation mode is
the normal mode, dummy processing is carried out on at least one
non-product substrate, e.g. on three non-product substrates, in the
normal mode.
[0127] According to the process in FIG. 10, the operation mode for
dummy processing is changed to the high-power mode or the long-time
mode based on the level of stability of the processing atmosphere,
which is required for the product processing in the step S810 (step
S1004), and only one-time dummy processing is executed in the
selected operation mode. As a result, the productivity of the
etching apparatus 100 can be enhanced.
[0128] The operation modes described above may not include one of
the high-power mode and the long-time mode, or may further include
a mode which is a combination of the recipes of the high-power mode
and the long-time mode. Further, programs for implementing the
respective operation modes may be provided separately in
association with the respective operation modes, or alternatively a
program for implementing the normal mode and another program for
changing the program for implementing the normal mode in accordance
with a selected one of the high-power mode and the long-time mode
may be provided.
[0129] Further, although in the process in FIG. 10, the operation
mode is changed, this is not limitative, but the process may be
configured such that the user can change the processing time and
the set value of the RF power for use in the main step set forth in
the recipe for the normal dummy processing.
[0130] In the above described embodiment, some kinds of process
gases can change the processing atmosphere to an atmosphere
unsuitable for product processing, and therefore it is preferable
that a step of carrying out dry cleaning using a single gas, such
as an oxygen (O.sub.2) gas, after execution of the main step is
added to the recipe for dummy processing. An example of the
above-mentioned atmosphere unsuitable for product processing is an
atmosphere in which a deposit (particles) is liable to be formed on
a substrate due to a process gas containing C.sub.4F.sub.6.
[0131] The substrate processing apparatus according to the present
embodiment is not limited to the etching apparatus 100 as shown in
FIG. 2, but variations thereof described below are possible.
[0132] FIG. 11 is a view schematically showing the arrangement of a
first variation of the substrate processing apparatus according to
the present embodiment.
[0133] As shown in FIG. 11, the substrate processing apparatus 100'
as the first variation is comprised of a first processing ship 111
including a process chamber (P/C) for carrying out reactive ion
etching (RIE) using plasma on a substrate W, a second processing
ship 112 disposed parallel with the first processing ship 111 and
including a process chamber (P/C) for carrying out a COR (Chemical
Oxide Removal) process and a PHT (Post Heat Treatment) process on
the substrate W subjected to RIE, a loader unit 113 having a
rectangular shape as a common transfer chamber (T/C) and connected
to the first processing ship 111 and the second processing ship
112, three FOUP mounting bases 115 connected to the loader unit
113, an orienter 116 as a pre-alignment section (P/A) connected to
the loader unit 113, for pre-aligning the position of a transferred
substrate W, first and second IMSs (Integrated Metrology Systems:
available from Therma-Wave, Inc.) connected to the loader unit 113,
for measuring the surface status of the substrate W, and an
operation controller 88 connected to the loader unit 113. On each
of the FOUP mounting bases 115, a FOUP (Front Opening Unified Pod)
114 is mounted as a container capable of containing twenty-five
substrates W including non-product substrates for dummy
processing.
[0134] FIG. 12 is a view schematically showing the arrangement of a
second variation of the substrate processing apparatus according to
the present embodiment.
[0135] As shown in FIG. 12, the substrate processing apparatus 100"
as the second variation is comprised of a substrate processing
section 202 including process chambers (P/C) for carrying out
various types of processing, such as film formation, diffusion, and
etching, on substrates W on a substrate-by-substrate basis, a
substrate storing section 3 for storing not only unprocessed
substrates W but also substrates W processed in the substrate
processing section 202, and a transfer chamber (T/C) 203 for
transferring a substrate W between the substrate processing section
202 and the substrate storing section 3. The substrate processing
section 202 includes six P/Cs 6A to 6F connected to the T/C
203.
[0136] The substrate storing section 3 is comprised of a FOUP
mounting base 11 on which four FOUPs 10A to 10D can be mounted, two
load lock (L/L) chambers 9A and 9B connected to the T/C 203, a
loader unit 12 of an atmosphere transport system, which is disposed
between the FOUP mounting base 11 and the L/L chambers 9A and 9B,
an orienter 18 as a pre-alignment section (P/A) for pre-aligning
the position of a substrate W, and two FOUPs, not shown, for
non-product substrates, which are mounted on the front side surface
of the loader unit 12 at respective locations below the L/L
chambers 9A and 9B. Each of the FOUPs 10A to 10D contains
twenty-five substrates W, for example, and each of the FOUPs for
non-product substrates contains a predetermined number of
non-product substrates for dummy processing which are used for
trial operation of the substrate processing apparatus 100".
[0137] As described above, the substrate processing apparatus 100"
as the second variation of the present embodiment is provided with
the six P/Cs 6A to 6F, i.e. more P/Cs than in the etching apparatus
100 in FIG. 2, so that more substrates W can be processed
simultaneously, which makes it possible to improve the substrate
processing efficiency of the substrate processing apparatus.
[0138] Although in the above described embodiment, substrates to be
processed are semiconductor substrates, this is not limitative, but
the present invention may be applied to processing of glass
substrates for LCDs, FPDs (Flat Panel Displays), and the like.
[0139] It is to be understood that the object of the present
invention may also be accomplished by supplying a computer or a CPU
with a program code of software, which realizes the functions of
the above described embodiment, and causing the computer or CPU to
read out and execute the program code.
[0140] The above program has only to realize the functions of the
above described embodiment on a computer, and the form of the
program may be an object code, a program code executed by an
interpreter, or script data supplied to an OS.
[0141] Further, it is to be understood that the object of the
present invention may also be accomplished by supplying a system or
an apparatus with a storage medium in which a program code of
software, which realizes the functions of the above described
embodiment is stored, and causing a computer (or CPU or MPU) of the
system or apparatus to read out and execute the program code stored
in the storage medium.
[0142] In this case, the program code itself read from the storage
medium realizes the functions of the above described embodiment,
and therefore the program code and the storage medium in which the
program code is stored constitute the present invention.
[0143] Examples of the storage medium for supplying the program
code include a floppy (registered trademark) disk, a hard disk, a
magnetic-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a
DVD-RAM, a DVD-RW, a DVD+RW, a magnetic tape, a nonvolatile memory
card, and a ROM. Alternatively, the program may be downloaded via a
network from another computer, a database, or the like, not shown,
connected to the Internet, a commercial network, a local area
network, or the like.
[0144] Further, it is to be understood that the functions of the
above described embodiment may be accomplished not only by
executing the program code read out by a computer, but also by
causing an OS (operating system) or the like which operates on the
computer to perform a part or all of the actual operations based on
instructions of the program code.
[0145] Further, it is to be understood that the functions of the
above described embodiment may be accomplished by writing a program
code read out from the storage medium into a memory provided on an
expansion board inserted into a computer or a memory provided in an
expansion unit connected to the computer and then causing a CPU or
the like provided in the expansion board or the expansion unit to
perform a part or all of the actual operations based on
instructions of the program code.
[0146] The present invention is not limited to the above described
embodiment, but can be modified in various manners based on the
subject matter of the present invention, which should not be
excluded from within the scope of the present invention insofar as
functions as recited in the appended claims or the functions
performed by the construction of the above described embodiment can
be achieved.
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