U.S. patent application number 11/012769 was filed with the patent office on 2005-08-25 for single-level no-crossing microelectromechanical hitless switch for high density integrated optics.
Invention is credited to Haus, Eleanor L., Haus, Hermann A., Kimerling, Lionel C., Popovic, Milos, Watts, Michael R., Wong, Chee Wei.
Application Number | 20050185884 11/012769 |
Document ID | / |
Family ID | 34916136 |
Filed Date | 2005-08-25 |
United States Patent
Application |
20050185884 |
Kind Code |
A1 |
Haus, Hermann A. ; et
al. |
August 25, 2005 |
Single-level no-crossing microelectromechanical hitless switch for
high density integrated optics
Abstract
An optical switch includes at least two signal bus waveguides
that receive optical signals as input. At least two directional
couplers are positioned so that the inputs to the at least two
directional couplers are not switched relative to each other.
Inventors: |
Haus, Hermann A.; (US)
; Popovic, Milos; (Richmond Hill, CA) ; Watts,
Michael R.; (Hingham, MA) ; Wong, Chee Wei;
(New York, NY) ; Kimerling, Lionel C.; (Concord,
MA) ; Haus, Eleanor L.; (Lexington, MA) |
Correspondence
Address: |
Gauthier & Connors LLP
Suite 3300
225 Franklin Street
Boston
MA
02110
US
|
Family ID: |
34916136 |
Appl. No.: |
11/012769 |
Filed: |
December 15, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11012769 |
Dec 15, 2004 |
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10833453 |
Apr 28, 2004 |
|
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60538736 |
Jan 23, 2004 |
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Current U.S.
Class: |
385/16 |
Current CPC
Class: |
G02F 1/3132 20130101;
G02B 6/3562 20130101; G02B 2006/12159 20130101; G02B 6/3576
20130101; H04J 14/0206 20130101; H04J 14/0212 20130101; G02B
2006/12145 20130101; G02B 6/3596 20130101; H04J 14/0204 20130101;
G02B 6/3536 20130101; G02B 6/125 20130101; G02B 6/357 20130101;
G02B 6/3584 20130101; G02F 1/3136 20130101; G02B 6/3546
20130101 |
Class at
Publication: |
385/016 |
International
Class: |
G02B 006/26 |
Claims
What is claimed is:
1. An optical switch comprising: at least two signal bus waveguides
that receive optical signals as input; and at least two directional
couplers that are positioned so that the inputs to said at least
two directional couplers are not switched relative to each
other.
2. The optical switch of claim 1 further comprising a bypass region
that performs finite reconfiguration time operations on output
signals received from one of said at least two directional
couplers.
3. The optical switch of claim 2, wherein said bypass region
comprises a .pi.-phase shift device in one of the arms of the
Mach-Zehnder configuration.
4. The optical switch of claim 1, wherein one of said at least two
directional couplers provides outputs signals to a through port and
a tap port.
5. The optical switch of claim 1, wherein said at least two
directional couplers comprises a MEMS perturbation device that is
on the same vertical plane as the at least two signal bus
waveguides.
6. The method of claim 5, where said MEMS perturbation device
provides strong perturbation with proximity switching, permitting
complete phase mismatch of the directional couplers.
7. A method of forming an optical switch comprising: providing at
least two signal bus waveguides that receive optical signals as
input; and positioning at least two directional couplers so that
the inputs to said at least two directional couplers are not
switched relative to each other.
8. The method of claim 6 further comprises proving a bypass region
that performs finite reconfiguration time operations on output
signals received from one of said at least two directional
couplers.
9. The method of claim 7, wherein said bypass region comprises a
.pi.-phase shift device in one of the arms of the Mach-Zehnder
configuration.
10. The method of claim 6, wherein one of said at least two
directional couplers provides outputs signals to a through port and
a tap port.
11. The method of claim 6, wherein said at least two directional
couplers comprises a MEMS perturbation device that is on the same
vertical plane as the at least two signal bus waveguides.
12. The method of claim 10, wherein said MEMS perturbation device
provides strong perturbation with proximity switching, permitting
complete phase mismatch of the directional couplers.
Description
PRIORITY INFORMATION
[0001] This application claims priority from provisional
application Ser. No. 60/538,736 filed Jan. 24, 2004, which is
incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] The invention relates to the field of high-integrated
optics, and in particular to a hitless switch for high-density
integrated optics.
[0003] Electro-optic channel waveguide modulators and switches are
potentially important circuit components for optical fiber
communications systems because they are efficient and can be
operated at high frequencies. A distinct advantage of channel
waveguide devices is that they are suitable for direct coupling to
optical fibers since the guided light wave is well confined in
bother transverse dimensions. Also, the power required for
waveguide modulators is much lower than for bulk modulators.
[0004] Single channel electro optic modulators in which the phase
of the propagating light wave is modulated have fabricated in
LiTaO.sub.3 and ZnS and ZnSe. Coupling between these devices and an
optical fiber is hindered because a polarization analyzer is
required at the waveguide output to transform phase modulation to
intensity modulation. This constraint can be relieved by direct
intensity modulation of the optical signal. It has been
demonstrated that amplitude modulation in a GaAs planar waveguide
configuration. Direct amplitude modulation in channel waveguides
has recently been observed in LiNbO.sub.3 GaAs by applying a
voltage so as to cause a localized increased in the refractive
index sufficient to trap the input light.
[0005] An electro-optic directional coupler switch comprises two
parallel strip line waveguides forming a passive directional
coupler with an electro-optic pad at the edge of each waveguide.
Initially light is focused onto one of the waveguides and the
amount of light coupled to the adjacent channel can be controlled
electro-optically. This scheme only permits direct amplitude
modulation of the light propagating in one channel, but allows
light to be switched from one channel to another.
SUMMARY OF THE INVENTION
[0006] According to one aspect of the invention, there is provided
an optical switch. The optical switch includes at least two signal
bus waveguides that receive optical signals as input. At least two
directional couplers are positioned so that the inputs to the at
least two directional couplers are not switched relative to each
other.
[0007] According to another aspect of the invention, there is
provided a method of forming an optical switch. The method includes
providing at least two signal bus waveguides that receive optical
signals as input. Also, the method includes positioning at least
two directional couplers so that the inputs to the at least two
directional couplers are not switched relative to each other.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 is a schematic diagram illustrating the inventive
hitless switch;
[0009] FIG. 2 is a schematic diagram illustrating a beam
propagation path before MEMS perturbation;
[0010] FIG. 3 is a graph demonstrating signal power against various
.delta./.kappa. ratios;
[0011] FIG. 4 is a graph demonstrating the extinction ratio in the
bypass region against various .delta./.kappa. ratios;
[0012] FIG. 5 is a graph and schematic diagram illustrating the
designed .kappa. values for various gap separations, s, and
designed .delta. for various gap regions, d, and thicknesses, t, of
a dielectric slab;
[0013] FIG. 6A is a schematic diagram illustrating an in-plane
sliding actuator mechanism; FIG. 6B is a scanning electron
micrograph of the comb-drives used in the in-plane sliding actuator
mechanism shown in FIG. 6A;
[0014] FIG. 7 is a graph illustrating signal loss from asymmetric
MEMS perturbation against various .delta./.kappa. ratios;
[0015] FIG. 8 is a graph demonstrating signal loss due to deviation
from ideal .pi.-phase shift against various .delta./.kappa. ratios,
wherein the deviation arises from actual device fabrication;
[0016] FIG. 9 is a graph demonstrating signal loss from asymmetric
directional couplers against various .delta./.kappa. ratios;
[0017] FIGS. 10A-10B are two-dimensional finite-difference
time-domain diagrams verifying the expected properties of the
inventive switch; and
[0018] FIGS. 11A-11C are process flow diagrams illustrating the
formation of the optical switch.
DETAILED DESCRIPTION OF THE INVENTION
[0019] A new concept of achieving a hitless switch for high-density
integrated optics is described herein. The need for a hitless
switch stems from the finite reconfiguration time necessary for
tuning optical add/drop multiplexers. Within this finite time
(order of milli- to micro-seconds) information bits will be lost or
mixed in the high-bandwidth optical channel. Therefore, there is a
requirement to switch the information from a signal bus waveguide
to another "bypass" waveguide, without any loss of bits, while the
reconfiguration is being performed on devices attached to the
signal bus waveguide. When the reconfiguration is complete, the
signal is transferred back to the signal bus waveguide without any
loss of bits.
[0020] FIG. 1 illustrates an exemplary hitless switch 2 in
accordance with the invention. The hitless switch 2 includes two
cascaded directional couplers 4, 6, two input signal bus waveguides
8, 10, and a bypass region 12. The first input signal bus waveguide
4 inputs a signal a1 and the second signal bus waveguide 10 input a
signal a2. The signal a1 and a2 are inputted to the directional
coupler 4. The bypass region 12 receives the output signals a7 and
a8 of the directional coupler. The bypass region 12 includes a Mach
Zehnder structure 18. The two arms 14, 16 of the Mach Zehnder
structure 18 form bypass waveguides that receive as input the
output signals a7 and a8 of the directional coupler 4. The bypass
region 12 performs finite reconfiguration time operations on
signals a7 and a8, and produces output signals a3 and a4 that are
provided to the second directional coupler 6. The second
directional coupler 6 further processes the signals a3 and a4 and
produces output signals a9 and a10. The output signals a5 and a6
are provided to the throughput port 20 and tap port 22.
[0021] The hitless switch 2 differs from that used in the prior art
because the inputs of the second direction coupler 6 does not need
to be switched relative to the inputs of the first directional
coupler 4. Note the directional couplers 4, 6 include
microelectromechanical perturbations to perform their processing.
Moreover, the microelectromechanical dielectric slab perturbs the
waveguide mode on the same vertical plane, through a sliding motion
of the dielectric slab. The microelectromechanical (MEMS)
dielectric perturbation gives a phase mismatch, and hence detuning,
of the directional coupler. The inventive designs described herein
permit a hitless switch to be constructed in a single-level,
permitting reductions in device micro- and nano-fabrication
complexity. This translates to improvements in device yield,
reduction in costs and manufacturing completion time.
[0022] Other alternatives for an integrated hitless switch include
an alternating-.DELTA..beta. optical waveguide coupler. In these
alternatives, the directional couplers are typically
electro-optically switched. The switched directional couplers can
also be surface waves generated through a transducer, differing
from the usage of dielectric slab perturbation. Finally, bypass
switches in free-space optics with MEMS micromirrors have been
suggested for optical fiber data distribution, though these
developments do not use the switched directional couplers discussed
herein and are not feasible for high-density integrated optics.
[0023] FIG. 2 shows a beam propagation path 30 that does not use
MEMS perturbation. As shown in FIG. 2, a signal a1 enters at the
signal bus waveguide 32 and exits at the through port 36 with a
signal a5. In FIG. 2, the couplers 40, 42 are designed for the
minimum conversion length, z=.pi./2.kappa., where .kappa. is the
waveguide coupling coefficient, such that there is complete
crossover of the light from one guide to the other. The fields in
the coupled waveguides can be modeled through coupled mode theory.
For example, the field amplitudes a3 and a4 in the bypass region
44, as shown in FIG. 2, are
a3(z)/e.sup.-i.beta.z=a1(cos.beta..sub.oz-i(.delta./.beta..sub.o)sin.beta.-
.sub.oz+a2(.kappa..sub.12/.beta..sub.e)sin.beta..sub.oz (1)
a4(z)/e.sup.-i.beta.z=a1(.kappa..sub.21/.beta..sub.o)sin.beta..sub.oz+a2(c-
os.beta..sub.oz+i(.delta./.beta..sub.o)sin.beta..sub.oz (2)
[0024] where a1, a2=the field amplitudes are the two input guides
32, 34, .kappa..sub.12=-.kappa..sub.21*=.kappa.,
.beta..sub.o=(.delta..sup.2+.kap- pa..sup.2).sup.0.5,
.delta.=(.beta..sub.1-.beta..sub.2)/2,
.beta.=(.beta..sub.1+.beta..sub.2)/2, .beta..sub.1 and .beta..sub.2
the propagation constants in waveguide 32 and 34 respectively.
[0025] The coupling coefficient .kappa. is estimated through a mode
solver, and the design verification is done through
finite-difference time-domain numerical computations. The signals
a5, a6 in the through port 36 and tap port 38 can be found by
repeating equations (1) and (2) for the second directional coupler
42, with a3 and a4 replacing a1 and a2 as the inputs. The
extinction ratio is defined as .vertline.a4.vertline..-
sup.2/.vertline.a3.vertline..sup.2. With the MEMS perturbation such
that .delta.=3.sup.1/2 .kappa., there is zero net crossover of
signal from signal bus waveguide to the coupled waveguide.
[0026] The calculated signal power, normalized by the input power
.vertline.a1.vertline..sup.2, is shown in FIG. 3 for various
.delta./.kappa. ratios. The resulting extinction ratio is also
shown in FIG. 4.
[0027] Note that the coupled mode theory formalism predicts zero
crosstalk for .delta.=0 when switching in one designed directional
coupler. However, a very low, but finite, crosstalk is expected due
to the index perturbation necessary for switching. Design for low
crosstalk is, therefore, desirable in the adiabatic separation of
the couplers. Scattering losses in the waveguides could also
contribute to the crosstalk degradation.
[0028] As an example, a SiN.sub.x material system is chosen
(refractive index n.about.2.2) to form two signal bus waveguides
50, 52 shown in FIG. 5 with a width x.sub.L of approximately 700 nm
and a thickness y.sub.L of approximately 300 nm for single-mode
guidance. The gap separation s between the waveguides 50, 52 is
approximately 250 nm. This provides a coupling coefficient of
approximately 88.times.10.sup.3 which translates to a coupling
length of approximately 17.8 .mu.m. For a4=0 and a3=1, as shown in
FIGS. 1 and 2, the perturbation .delta. is approximately
152.times.10.sup.3. This perturbation .delta. is achievable through
MEMS. This is calculated using a mode-solver. The perturbation slab
has a thickness, t, of approximately 450 nm and a gap d of
approximately 50 nm. A summary of the designed results are also
shown in FIG. 5.
[0029] As shown in FIG. 5, the coupling coefficient drops
exponentially with increasing gap d. More importantly, FIG. 5 shows
we can design perturbation .delta. with magnitude on order of the
required 3.sup.1/2 .kappa. using MEMS perturbation to achieve
complete phase mismatch in the directional couplers. Examples of
two selected gaps d for the directional coupler are also shown at
points 51 in FIG. 5, with d=250 and 300 nm respectively. With these
d dimensions, the perturbation .delta. can be easily designed for
sufficient mismatch on the directional couplers.
[0030] An in-plane sliding actuator mechanism 60, as shown in FIG.
6A, can be used to form the necessary perturbation discussed
herein. The in-plane sliding actuator 60 includes interdigitated
comb-drive "fingers" 62 that are actuated by applying a
differential voltage between the fingers 62, shown in FIG. 6A. The
electrostatic attractive force is mainly due to the fringing
fields. In this comb-drive actuator 60, the capacitance (expressed
with first-order accuracy as .epsilon.A/g, where .epsilon. is the
permittivity of the medium surrounding the comb-drive fingers 62)
is varied through changing the area A linearly, instead of the gap
g nonlinearly between two parallel capacitance plates. The elements
A and gap g are shown in more detail in FIG. 6A. The result is an
actuator force approximately proportional to the square of the
applied voltage. Compared to a parallel capacitance plate actuator
mechanism, electrostatic comb-drives 62 have better controllability
since it is less susceptible to pull-in instability from the
positive feedback in parallel capacitance plate designs. Capacitive
position sensing could also be performed. A scanning electron
micrograph of the comb-drives are shown in FIG. 6B.
[0031] The supporting beams 64 can be designed for sufficient
stiffness on order of 0.5 N/m, cantilever lengths of order 150
.mu.m, widths of order 5 .mu.m, and thickness of order 0.3 .mu.m,
for order 1 nm displacement resolution of the perturbing dielectric
slab. Following this example, the number of comb-drive finger pairs
62 is on order of 50, with a gap of 1 .mu.m between the fingers,
and applied voltages between 1 V for a 1 nm displacement and
50V.
[0032] During actual device fabrication and operation, the device
geometry and perturbation deviates from ideal theoretical design.
The sensitivity from imperfect fabrication and operation, caused
by: (i) asymmetric MEMS perturbation, (ii) variation in .pi.-phase
shift, and (iii) asymmetric directional couplers are described
hereinafter. These variations results in a loss in through port
signal.
[0033] Asymmetric MEMS perturbation arises when the two dielectric
slabs do not arrive at exactly the same time and position. FIG. 7
illustrates the through port signal (normalized by
.vertline.a1.vertline..sup.2) for various .delta./.kappa. ratios.
The various lines refer to different magnitudes of asymmetry, such
as when the first perturbing slab having .delta..sub.s 31% larger
than the second perturbing slab .delta..sub.b. From FIG. 7, it is
observed that if the two MEMS perturbing slabs are controlled
within 0.76 to 1.31 times of each other, we get a 0.5 dB signal
loss in the through port. The sensitivity is nonlinear, however;
for larger asymmetries, the signal loss is significantly
larger.
[0034] Secondly, the effects of variations in the .pi.-phase shift
is illustrated in FIG. 8. The variation arises either from
asymmetry in the two waveguides arms causing different phase delays
or from different input signal frequencies, since the .pi.-phase
shift is geometrically designed for one particular frequency. For a
.+-.20% variation from the ideal .pi.-phase shift, a 0.5 dB hit is
predicted; for a .+-.1.3% variation, a negligible (less than 0.01
dB) hit is predicted. The 1.3% deviation in .pi.-phase shift arises
from operation in the C-band (.about.1530 to 1570 nm) with the
device designed for operation at 1550 nm.
[0035] In addition, each directional coupler has a frequency
dependence between 1530 to 1570 nm, ranging from 5-10% variation of
the coupling .kappa. at 1550 nm. However, even if conversion
lengths are designed only for operation at 1550 nm, the two
cascaded directional couplers as a whole is broadband. Operating
away from 1550 nm, there is incomplete crossover ("leakage") at the
first directional coupler but this leakage is destructively
interfered at the output of the second directional coupler.
[0036] Thirdly, the effects of asymmetric couplers are described in
FIG. 9. For a threshold signal loss of 0.5 dB, for example, the
device can tolerate a differential variation between .kappa..sub.a
and .kappa..sub.b of approximately 0.77 to 1.30 times of each
other.
[0037] Finite-difference time-domain (FDTD) calculations, as shown
in FIGS. 10A-10B, are performed to verify the results from coupled
mode theory and the mode solver. The FDTD is performed in
2-dimensions with the effective index determined from a
perturbation approach. FIG. 10A shows complete crossover for the
designed conversion length of 15.1 .mu.m in the designed
directional coupler, with specific dimensions described. When
perturbed with .delta..about.3.sup.1/2 .kappa. (d=50 nm and t=450
nm), a zero net crossover is observed. This is illustrated in FIG.
10B. This confirms the validity of the device concept and
design.
[0038] By removing the need to switch inputs of DCM2 to inputs of
DCM1 and designing the MEMS dielectric perturbation on the same
vertical plane of the waveguides, the device implementation can be
reduced to a single-level--with a single lithography step--as
described in this invention. This permits reductions in device
micro- and nano-fabrication complexity. This also translates to
improvements in device yield, reduction in costs and manufacturing
completion time.
[0039] The fabrication process flow, showing the top view and side
profile of the invention, is illustrated in FIGS. 11A-11B. For a
SiN.sub.x material system, the first step is to deposit
low-pressure chemical-vapor-deposition nitride 70 on a silicon
dioxide layer 74. Note the silicon dioxide layer 74 is form on a
substrate 72. Note a Si material system having a 200 nm Unibond
Silicon-On-Insulator wafer can be used in place of the SiNx
material system. The SOI wafer can include a Si top layer, silicon
dioxide layer, and substrate. The second step is to define the
device geometry with an electron-beam lithography step, as shown in
FIG. 1I B. Note a Cr layer 76 is deposited on the top layer 70 the
SiNx. This step concurrently defines the directional couplers 73,
the MEMS dielectric slabs 75, and other structures such as the
waveguides, supporting structure, and the electrostatic
comb-drives. If electron-beam lithography is not used, a
photoresist layer can be used to form the device geometry. The
final step is to release the MEMS structure through a buffered
oxide etch 78 that removes the oxide 74 underneath the MEMS
structure, as shown in FIG. 11C. This step also removes the
cladding underneath the directional couplers.
[0040] Although the present invention has been shown and described
with respect to several preferred embodiments thereof, various
changes, omissions and additions to the form and detail thereof,
may be made therein, without departing from the spirit and scope of
the invention.
* * * * *