U.S. patent application number 11/015490 was filed with the patent office on 2005-06-23 for temperature controller system for controlling temperature of an object and an apparatus including same.
This patent application is currently assigned to Samsung Electronics Co., Ltd.. Invention is credited to Choi, Seoung-Heagk.
Application Number | 20050133157 11/015490 |
Document ID | / |
Family ID | 34675890 |
Filed Date | 2005-06-23 |
United States Patent
Application |
20050133157 |
Kind Code |
A1 |
Choi, Seoung-Heagk |
June 23, 2005 |
Temperature controller system for controlling temperature of an
object and an apparatus including same
Abstract
A temperature controller includes a bath for containing a
refrigerant. One cooling line has one end connected to the bath and
the other end branching off into a plurality of diverged lines. The
first diverged line is connected to an edge portion of an object.
The second diverged line is connected to a middle portion of the
object. The third diverged line is connected to a central portion
of the object. A plurality of valves for controlling flux of the
refrigerant are mounted on inlets of the plurality of diverged
lines, respectively. A plurality of temperature sensors for
detecting temperatures of the refrigerant are mounted on outlets of
the plurality of diverged lines, respectively. A controller
controls opening angles of the plurality of valves in accordance
with the detected temperatures of the refrigerant.
Inventors: |
Choi, Seoung-Heagk; (Seoul,
KR) |
Correspondence
Address: |
MARGER JOHNSON & MCCOLLOM, P.C.
1030 SW MORRISON STREET
PORTLAND
OR
97205
US
|
Assignee: |
Samsung Electronics Co.,
Ltd.
Suwon-Si
KR
|
Family ID: |
34675890 |
Appl. No.: |
11/015490 |
Filed: |
December 16, 2004 |
Current U.S.
Class: |
156/345.27 ;
156/345.51; 156/345.53 |
Current CPC
Class: |
H01J 2237/2001 20130101;
H01L 21/67109 20130101; H01L 21/67248 20130101 |
Class at
Publication: |
156/345.27 ;
156/345.51; 156/345.53 |
International
Class: |
C23F 001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 22, 2003 |
KR |
2003-94360 |
Claims
What is claimed is:
1. A temperature controller system for controlling the temperature
of an object, the system comprising: a refrigerant bath for
containing a refrigerant; a cooling line having a first end
connected to the refrigerant bath and a second end opposite to the
first end; a plurality of diverged lines connected at one end to
the second end of the cooling line, and connected at the other end
to the object; a plurality of valves respectively mounted on the
plurality of diverged lines; a plurality of sensors for detecting
temperatures of the refrigerant flowing through the plurality of
diverged lines; and a controller for controlling opening angles of
the valves in accordance with the temperatures of the refrigerant
detected by the plurality of temperature sensors.
2. The temperature controller system of claim 1, wherein a first
diverged line is connected to an edge portion of the object, a
second diverged line is connected to a middle portion of the
object, and a third diverged line is connected to a central portion
of the object.
3. The temperature controller system of claim 2, wherein the first,
second and third diverged lines are formed in concentric circles on
the object.
4. The temperature controller system of claim 1, wherein the
plurality of valves are respectively mounted on inlets of the
plurality of diverged lines through which the refrigerant flows
into the object.
5. The temperature controller system of claim 1, wherein the
sensors are mounted respectively on outlets of the plurality of
diverged lines, through which the refrigerant flows from the
object.
6. An etching apparatus comprising: an etching chamber for
introducing a reaction gas for forming a plasma therein; an
electrostatic chuck disposed on a bottom face of the etching
chamber for supporting a wafer thereon; and a temperature
controller system including a refrigerant bath for containing a
refrigerant, a cooling line having a fist end connected to the
refrigerant bath and a second end opposite to the first end, a
plurality of diverged lines connected at one end to the second end
of the cooling line and connected at the other end to the
electrostatic chuck, a plurality of valves respectively mounted on
the plurality of diverged lines, a plurality of sensors for
detecting temperatures of the refrigerant flowing through the
plurality of diverged lines, and a controller for controlling
opening angles of the valves in accordance with the temperatures of
the refrigerant detected by the plurality of temperature
sensors.
7. The etching apparatus of claim 6, wherein a first diverged line
is connected to an edge portion of the electrostatic chuck, a
second diverged line is connected to a middle portion of the
electrostatic chuck, and a third diverged line is connected to a
central portion of the electrostatic chuck.
8. The etching apparatus of claim 7, wherein the diverged lines are
formed in concentric circles on the electrostatic chuck.
9. The etching apparatus of claim 6, wherein the plurality of
valves are respectively mounted on inlets of the plurality of
diverged lines.
10. The etching apparatus of claim 6, wherein the sensors are
respectively mounted on outlets of the plurality of diverged
lines.
11. An etching apparatus comprising: an etching chamber for
introducing a reaction gas for forming a plasma threin; an
electrostatic chuck disposed on a bottom face of the etching
chamber for supporting a wafer thereon; an upper electrode disposed
at an upper portion of the etching chamber, the upper electrode for
applying a voltage to the reaction gas to form the plasma; a
cooling plate for cooling the upper electrode; and a temperature
controller system including a refrigerant bath for containing a
refrigerant, a cooling line having a fist end connected to the
refrigerant bath and a second end opposite to the first end, a
plurality of diverged lines connected at one end to the second end
of the cooling line and connected at the other end to the
electrostatic chuck, a plurality of valves respectively mounted on
the plurality of diverged lines, a plurality of sensors for
detecting temperatures of the refrigerant flowing through the
plurality of diverged lines, and a controller for controlling
opening angles of the plurality of valves in accordance with the
temperatures of the refrigerant detected by the plurality of
temperature sensors.
12. The etching apparatus of claim 11, wherein a first diverged
line is connected to an edge portion of the cooling plate, a second
diverged line is connected to a middle portion of the cooling
plate, and a third diverged line is connected to a central portion
of the cooling plate.
13. The etching apparatus of claim 12, wherein the first, second
and third diverged lines are formed in concentric circles on the
cooling plate.
14. The etching apparatus of claim 1 1, wherein the plurality of
valves are respectively mounted on inlets of the plurality of
diverged lines, through which the refrigerant flows into the
electrostatic chuck.
15. The etching apparatus of claim 11, wherein the sensors are
respectively mounted on outlets of the plurality of diverged lines,
through which the refrigerant flows from the object.
16. An etching apparatus comprising: an etching chamber for
introducing a reaction gas for forming a plasma therein; an
electrostatic chuck disposed on a bottom face of the etching
chamber, the chuck for supporting a wafer thereon; a first
temperature controller system for controlling a temperature of the
electrostatic chuck; an upper electrode disposed at an upper
portion of the etching chamber, the upper electrode for applying a
voltage to the reaction gas to form the plasma; a cooling plate for
cooling the upper electrode; and a second temperature controller
system for controlling a temperature of the cooling plate, a
temperature controller system including a refrigerant bath for
containing a refrigerant, a cooling line having a fist end
connected to the refrigerant bath and a second end opposite to the
first end, a plurality of diverged lines connected at one end to
the second end of the cooling line and connected at the other end
to the electrostatic chuck, a plurality of valves respectively
mounted on the plurality of diverged lines, a plurality of sensors
for detecting temperatures of the refrigerant flowing through the
plurality of diverged lines, and a controller for controlling
opening angles of the plurality of valves in accordance with the
temperatures of the refrigerant detected by the plurality of
temperature sensors.
17. The etching apparatus of claim 16, wherein at least one first
diverged line is connected to an edge portion of the electrostatic
chuck and the cooling plate, respectively, at least one second
diverged line is connected to a middle portion of the electrostatic
chuck and the cooling plate, respectively, and at least one third
diverged line is connected to a central portion of the
electrostatic chuck and the cooling plate, respectively.
18. The etching apparatus of claim 17, wherein the first, second
and third diverged lines are formed in concentric circles on the
electrostatic chuck and the cooling plate.
19. The etching apparatus of claim 16, wherein the plurality of
valves are respectively mounted on inlets of the plurality of
diverged lines, through which the refrigerant flows into the
electrostatic chuck.
20. The etching apparatus of claim 16, wherein the sensors are
respectively mounted on outlets of the plurality of diverged lines,
through which the refrigerant flows from the object.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority under 35 USC .sctn. 119 to
Korean Patent Application No. 2003-94360, filed on Dec. 22, 2003,
the contents of which are herein incorporated by reference in its
entirety for all purposes.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a temperature controller
system for controlling temperature of an object, and an apparatus
including the temperature controller system. More particularly, the
present invention relates to a temperature controller system for
controlling the temperature of an area in which a wafer is
disposed, and an etching apparatus for uniformly etching a surface
of the wafer using the temperature controller system.
[0004] 2. Description of the Related Arts
[0005] Generally, a semiconductor device may be manufactured by
stacking a semiconductor material, a conductive material and a
non-conducting material on a semiconductor substrate and then by
patterning the stacked layers. A process for forming a pattern may
include a photolithography process for forming a photoresist
pattern which is produced by exposing and developing a
photosensitive photoresist film formed on an underlying layer on
the semiconductor substrate using a mask. Then, an etching process
is provided for etching the underlying layer using the photoresist
pattern as an etching mask. The etching process may be carried out
for manufacturing the semiconductor device. To form a pattern by
selectively removing an object material in the etching process,
various etching techniques have been developed and diverse etching
equipments have been used.
[0006] The etching techniques may be classified into isotropic
etching techniques and anisotropic etching techniques. The
isotropic etching technique is one in which a layer is etched in a
specific direction. Basically, it is an etching technique using a
chemical reaction to implement the isotropic etching technique. A
wet etching technique and a plasma etching technique can be
employed to implement the isotropic etching technique. The
anisotropic etching technique can use a reactive ion etching (RIE)
technique. In the RIE process, reaction gases are ionized in a
processing chamber. The ionized gases are electrically accelerated
so that a specified layer is generally etched in the direction of a
specified electric field. Plasma for activating the reaction gases
is used in a dry etching technique. A high-frequency electric field
is applied to the reaction gases to form the plasma.
[0007] In particular, a voltage is applied between upper and lower
electrodes disposed in a plasma chamber to form an electric field
therein. A reaction gas is supplied to a space between the upper
and lower electrodes under a low pressure. The voltage may be
generated using an alternating current, such as a high-frequency
alternating current, or a direct current. When the direct current
is used, the flow of the direct current may be cut off so that an
insulation material for covering the electrodes is not used. When
an alternating current is used, it is not necessary that both ends
of the electrodes include a conductive material. Sufficient energy
is provided to electrons between the upper and lower electrodes by
vibration of the electric field so that the electrons collide
against neutral atoms to create charged particles. The electrons
generated in the space between the upper and lower electrodes
collide against the neutral atoms to generate decomposition and
luminescence, thereby creating more ions and electrons. Positive
ions are accelerated by the electric field to collide against the
electrodes, thereby creating additional electrons.
[0008] Meanwhile, when the charged particles are increased, the
charged particles having different polarities collide with each
other so that the total number of charged particles is decreased.
When numbers of the charged particles generated in the etching
process are balanced with numbers of the charged particles
converted into the neutral particles, the plasma has a stable
state. The stable plasma comprises partially ionized particles and
neutral particles under a low pressure.
[0009] FIG. 1 is a cross sectional view illustrating a conventional
plasma etching apparatus. Referring to FIG. 1, a conventional
plasma etching apparatus includes an etching chamber 1 into which a
reaction gas is introduced. An electrostatic chuck (ESC) 2 on which
a wafer is disposed is mounted on a bottom face of the etching
chamber 1. A lower electrode (not shown) is disposed under the ESC
2.
[0010] An upper electrode 3 for applying a high-frequency voltage
to the reaction gas to form plasma is disposed at an upper portion
of the etching chamber 1. A cooling plate 8 for cooling the upper
electrode 3 is mounted on the upper electrode 3. A gas-diffusing
ring 7 for providing the reaction gas into the etching chamber 1 is
disposed beneath an edge of the upper electrode 3.
[0011] A matcher 6 for applying a radio frequency (RF) power to the
upper electrode 3 is disposed over the etching chamber 1. The
matcher 6 is disposed over the upper electrode 3. A vacuum pump 5
for providing vacuum into the etching chamber 1 is connected to a
lower face of the etching chamber 1. A vacuum sensor 4 is attached
to a sidewall of the etching chamber 1.
[0012] Since the wafer is heated at a high temperature in the
etching process, controlling the temperature of the wafer by
cooling is required. Thus, a temperature controller is provided to
the ESC 2.
[0013] FIG. 2 is a perspective view illustrating a conventional
temperature controller. Referring to FIG. 2, the conventional
temperature controller includes a cooling line 10 formed in the ESC
2. The cooling line 10 has a spiral single line that extends from
an edge portion of the ESC 2 to a central portion of the ESC 2
through the middle portion of the ESC 2. An edge portion of the
cooling line 10, positioned at the edge portion of the ESC 2,
corresponds to an inlet in which a refrigerant enters. A central
portion of the cooling line 10, positioned at the central portion
of the ESC 2, corresponds to an outlet from which the refrigerant
exits.
[0014] A refrigerant bath 11 in which the refrigerant is contained
is connected to the inlet of the cooling line 10. A valve 12 for
controlling flux of the refrigerant is mounted on the inlet of the
cooling line 10. A temperature sensor 13 for detecting a
temperature of the refrigerant is mounted on the outlet of the
cooling line 10.
[0015] The conventional temperature controller cools the wafer
disposed on the ESC 2 using the refrigerant that flows through the
single cooling line 10. Since the cooling line 10 is a single line,
the conventional temperature controller may not separately control
the central portion, the middle portion and the edge portion of the
ESC 2. Particularly, the edge portion of the ESC 2, adjacent to the
inlet of the cooling line 10, is cooled more rapid than the central
portion of the ESC 2. As a result, the edge portion of the ESC 2
has a temperature below that of the central portion of the ESC 2.
An etching rate is inversely proportional to the temperature so
that the edge portion of the wafer has an etching rate greater than
that of the central portion of the wafer. Accordingly, the wafer
may not be etched uniformly.
[0016] To overcome the above problem, a conventional temperature
controller illustrated in FIG. 3 is disclosed in Japan Laid Open
publication No. 1993-243191.
[0017] Referring to FIG. 3, a conventional temperature controller
includes first, second and third refrigerant baths 21, 22 and 23. A
first cooling line 31 is connected between the first refrigerant
bath 21 and an edge portion of an ESC 50. A second cooling line 32
is connected between the second refrigerant bath 22 and a middle
portion of the ESC 50. A third cooling line 33 is connected between
the third refrigerant bath 23 and a central portion of the ESC 50.
First, second and third valves 41, 42 and 43 are mounted on inlets
of the first, second and third cooling lines 31, 32 and 33,
respectively. Also, first, second and third temperature sensors 61,
62 and 63 are installed at the first, second and third cooling
lines 31, 32 and 33, respectively. First, second and third
controllers 71, 72 and 73 control opening angles of the first,
second and third valves 41, 42 and 43 in accordance with
temperatures detected by the first, second and third temperature
sensors 61, 62 and 63.
[0018] The conventional temperature controller separately provides
different refrigerants from the first, second and third refrigerant
baths 21, 22 and 23 to the edge portion, the middle portion and the
central portion of the ESC 50 through the first, second and third
cooling lines 31, 32 and 33, respectively. Thus, the conventional
temperature controller may separately control the edge portion, the
middle portion and the central portion of the ESC 50.
[0019] However, although the conventional temperature controller
controls the temperature of the ESC by regions, one to one
correspondence of the baths to the regions is required. When the
numbers of the baths are increased, the temperature controller has
complex structure and thus, high manufacturing cost of the
temperature controller is resulted.
[0020] Also, the flux of the different refrigerants from the
separate baths may not be readily controlled. Further, the separate
baths may be independently managed.
SUMMARY OF THE INVENTION
[0021] The present invention provides a temperature controller
capable of controlling temperatures of a stage by regions using one
bath.
[0022] The present invention also provides an etching apparatus
having the above-mentioned temperature controller.
[0023] A temperature controller system for controlling the
temperature of an object in accordance with one aspect of the
present invention includes a bath for containing a refrigerant. One
cooling line has a first end connected to the bath and a second end
opposite to the first end. The second end branches off into a
plurality of diverged lines, e.g., first, second and third diverged
lines. The first diverged line is connected to an edge portion of
the object. The second diverged line is connected to a middle
portion of the object. The third diverged line is connected to a
central portion of the object. A plurality of valves for
controlling a flux of the refrigerants are mounted on inlets of the
plurality of diverged lines, respectively, through which the
refrigerant flows to the object. A plurality of temperature
sensors, e.g., first, second and third temperature sensors for
detecting temperatures of the refrigerant are mounted on outlets
of, e.g., the first, second and third diverged lines, respectively,
through which the refrigerant flows from the object. A controller
controls opening angles of the plurality of valves in accordance
with the temperatures of the refrigerant detected by the first,
second and third temperature sensors.
[0024] An apparatus in accordance with another aspect of the
present invention includes an etching chamber into which a reaction
gas for forming a plasma is introduced. An electrostatic chuck
(ESC) on which a wafer is disposed is installed on a bottom face of
the etching chamber. An upper electrode for applying a voltage to
the reaction gas to form the plasma is disposed at an upper portion
of the etching chamber. A cooling plate is mounted on the upper
electrode. A temperature controller is connected to the ESC. The
temperature controller includes a bath for containing a
refrigerant. One cooling line has a first end connected to the bath
and a second end opposite to the first end. The second end branches
off into first, second and third diverged lines. The first diverged
line is connected to an edge portion of the ESC. The second
diverged line is connected to a middle portion of the ESC. The
third diverged line is connected to a central portion of the ESC.
First, second and third valves for controlling flux of the
refrigerant are mounted on inlets of the first, second and third
diverged lines, respectively, through which the refrigerant flows
to the ESC. First, second and third temperature sensors for
detecting temperatures of the refrigerant are mounted on outlets of
the first, second and third diverged lines, respectively, through
which the refrigerant flows from the ESC. A controller controls
opening angles of the first, second and third valves in accordance
with the temperatures of the refrigerant detected by the first,
second and third temperature sensors.
[0025] An apparatus in accordance with still another aspect of the
present invention includes an etching chamber into which a reaction
gas for forming a plasma is introduced. An ESC on which a wafer is
disposed is installed on a bottom face of the etching chamber. An
upper electrode for applying a voltage to the reaction gas to form
the plasma is disposed at an upper portion of the etching chamber.
A cooling plate is mounted on the upper electrode. A temperature
controller is connected to the cooling plate. The temperature
controller includes a bath for containing a refrigerant. One
cooling line has a first end connected to the bath and a second end
opposite to the first end. The second end branches off into first,
second and third diverged lines. The first diverged line is
connected to an edge portion of the cooling plate. The second
diverged line is connected to a middle portion of the cooling
plate. The third diverged line is connected to a central portion of
the cooling plate. First, second and third valves for controlling
flux of the refrigerants are mounted on inlets of the first, second
and third diverged lines, respectively, through which the
refrigerant flows to the cooling plate. First, second and third
temperature sensors for detecting temperatures of the refrigerants
are mounted on outlets of the first, second and third diverged
lines, respectively, through which the refrigerant flows from the
cooling plate. A controller controls opening angles of the first,
second and third valves in accordance with the temperatures of the
refrigerant detected by the first, second and third temperature
sensors.
[0026] An apparatus in accordance with still another aspect of the
present invention includes an etching chamber into which a reaction
gas for forming a plasma is introduced. An ESC on which a wafer is
disposed is installed on a bottom face of the etching chamber. A
first temperature controller is connected to the ESC. An upper
electrode for applying a voltage to the reaction gas to form a
plasma is disposed at an upper portion of the etching chamber. A
cooling plate is mounted on the upper electrode. A second
temperature controller is connected to the cooling plate. Each of
the first and second temperature controllers includes a bath in
which a refrigerant is contained. One cooling line has a first end
connected to the bath and a second end opposite to the first end.
The second end branches off into each of first, second and third
diverged lines. Each of the first diverged lines is connected to an
edge portion of the ESC and the cooling plate. Each of the second
diverged lines is connected to a middle portion of the ESC and the
cooling plate. Each of the third diverged lines is connected to a
central portion of the ESC and the cooling plate. First, second and
third valves for controlling flux of the refrigerant are mounted on
inlets of the first, second and third diverged lines, respectively,
through which the refrigerant flows to the ESC or the cooling
plate. First, second and third temperature sensors for detecting
temperatures of the refrigerants are mounted on outlets of the
first, second and third diverged lines, respectively, through which
the refrigerant flows from the ESC or the cooling plate. A
controller controls opening angles of the first, second and third
valves in accordance with the temperatures of the refrigerant
detected by the first, second and third temperature sensors.
[0027] According to embodiments of the present invention, the
temperatures of the object by regions may be readily controlled
using one bath. Thus, the temperature controller has simple
structure, and manufacturing cost of the temperature controller is
decreased. Also, the flux of the refrigerants from one bath may be
readily controlled.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above objects and advantages of the present invention
will become more apparent by describing preferred embodiments in
detail with reference to the attached drawings in which:
[0029] FIG. 1 is a cross sectional view illustrating a conventional
etching apparatus;
[0030] FIG. 2 is a perspective view illustrating a conventional
temperature controller;
[0031] FIG. 3 is a partially cross sectional view illustrating an
etching apparatus having a conventional temperature controller;
[0032] FIG. 4 is a cross sectional view illustrating a temperature
controller in accordance with a first embodiment of the present
invention;
[0033] FIG. 5 is a cross sectional view illustrating an ESC in
which the temperature controller in FIG. 4 is employed;
[0034] FIG. 6 is a cross sectional view illustrating an etching
apparatus in accordance with a second embodiment of the present
invention;
[0035] FIG. 7 is a cross sectional view illustrating an etching
apparatus in accordance with a third embodiment of the present
invention; and
[0036] FIG. 8 is a cross sectional view illustrating an etching
apparatus in accordance with a fourth embodiment of the present
invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0037] The present invention will be described more fully
hereinafter with reference to the accompanying drawings, in which
preferred embodiments of the invention are shown.
Embodiment 1
[0038] Referring to FIG. 4, a temperature controller system 100 in
accordance with the present embodiment of the present invention
includes only one refrigerant bath 110 for containing a
refrigerant. One cooling line 120 has a first end and a second end.
The first end of the cooling line 120 is connected to the
refrigerant bath 110. The second end of the cooling line 120
branches off into first, second and third diverged lines 131, 132
and 133.
[0039] The first diverged line 131 is connected to an edge portion
of an object 240, for example an electrostatic chuck on which a
wafer is disposed. The second diverged line 132 is connected to a
middle portion of the object 240. The third diverged line 133 is
connected to a central portion of the object 240.
[0040] Referring to FIG. 5, the first, second and third diverged
lines 131, 132 and 133 are arrayed in concentric circles on the
object 240. In particular, the first diverged line 131 formed on
the edge portion of the object 240 has a circular shape having a
first diameter. The second diverged line 132 formed on the middle
portion of the object 240 has a circular shape having a second
diameter less than the first diameter. The third diverged line 133
formed on the central portion of the object 240 has a circular
shape having a third diameter less than the second diameter.
Alternatively, the first, second and third diverged lines 131, 132
and 133 may be arrayed in spiral shapes. Also, the first, second
and third diverged lines 131, 131 and 133 may have rectangular or
triangular shapes.
[0041] Referring again to FIG. 4, first, second and third valves
141, 142 and 143 are mounted on inlets of the first, second and
third diverged lines 131, 132 and 133, respectively, through which
the refrigerant flows to the object 240. Particularly, the first
valve 141 is mounted on the inlet of the first diverged line 131.
The second valve 142 is mounted on the inlet of the second diverged
line 132. The third valve is mounted on the inlet of the third
diverged line 133.
[0042] According to the present embodiment, although the
temperature controller system 100 has one refrigerant bath 110, the
first, second and third valves 141, 142 and 143 separately control
flux of the refrigerants flowing through the respective first,
second and third diverged lines 131, 132 and 133.
[0043] The first, second and third diverged lines 131, 132 and 133
have outlets, respectively, through which the refrigerants flow
from the object 240. First, second and third temperature sensors
151, 152 and 153 are installed on the outlets of the first, second
and third diverged lines 131, 132 and 133, respectively.
[0044] A controller 160 controls the opening angles of the first,
second and third valves 141, 142 and 143 in accordance with the
temperatures of the refrigerants detected by the first, second and
third temperature sensors 151, 152 and 153.
[0045] The refrigerants flow from the refrigerant bath 110 into the
first, second and third diverged lines 131, 132 and 133 through the
cooling line 120. Here, the first, second and the third valves 141,
142 and 143 separately control the flux of the refrigerants flowing
through the first, second and third diverged lines 131, 132 and
133, respectively. Also, the first, second and third temperature
sensors 151, 152 and 153 detect the temperatures of the
refrigerants that exit from the respective first, second and third
diverged lines 131, 132 and 133.
[0046] The temperatures of the refrigerants are transmitted to the
controller 160. The controller 160 properly adjusts the opening
angles of the first, second and third valves 141, 142 and 143 to
uniformly cool the object 240.
[0047] For example, when a central temperature of the object 240 is
higher than an edge temperature of the object 240, the controller
160 controls the third valve 143 to open wider than the first valve
141, thereby increasing the flux of the refrigerant flowing through
the third diverged line 133 so that it is greater than that of the
refrigerant flowing through the first diverged line 131. As a
result, the object 240 can be substantially uniformly cooled.
Embodiment 2
[0048] Referring to FIG. 6, an etching apparatus 200 in accordance
with the present embodiment of the present invention includes the
temperature controller system 100 which is disposed in accordance
with the first embodiment. Accordingly, identical reference
numerals refer to substantially identical elements and a further
illustration of the temperature controller system 100 is
omitted.
[0049] The etching apparatus 200 includes an etching chamber 210
into which a reaction gas for forming a plasma is introduced. An
electrostatic chuck 240 on which a wafer W is disposed is mounted
on a bottom face of the etching chamber 210. A lower electrode (not
shown) is disposed under the electrostatic chuck 240. The
temperature controller system 100 is connected to the electrostatic
chuck 240.
[0050] An upper electrode 220 for applying a high voltage to the
reaction gas to form the plasma is disposed at an upper portion of
the etching chamber 210. A cooling plate 230 for cooling the upper
electrode 220 is mounted on the upper electrode 220. A
gas-diffusing ring 270 for uniformly diffusing the reaction gas
into the etching chamber 210 is disposed beneath an edge of the
upper electrode 220.
[0051] An RF matcher 260 for applying an RF power to the upper
electrode 220 is disposed over the upper electrode 210. A vacuum
pump 250 for providing vacuum into the etching chamber 210 is
connected to a lower portion of the etching chamber 210. A vacuum
sensor 280 is attached to a sidewall of the etching chamber
210.
Embodiment 3
[0052] Referring to FIG. 7, an etching apparatus 200 in accordance
with the present embodiment of the present invention includes the
temperature controller system 100 designed in accordance with the
first embodiment. Accordingly, identical reference numerals refer
to substantially identical elements and a further illustration of
the temperature controller system 100 is omitted.
[0053] The etching apparatus 300 includes an etching chamber 310
into which a reaction gas for forming a plasma is introduced. An
electrostatic chuck 340 on which a wafer W is disposed is mounted
is disposed on the bottom face of the etching chamber 310. A lower
electrode (not shown) is disposed under the electrostatic chuck
340.
[0054] An upper electrode 320 for applying a high voltage to the
reaction gas to form the plasma is disposed at an upper portion of
the etching chamber 310. A cooling plate 330 for cooling the upper
electrode 320 is mounted on the upper electrode 320. The
temperature controller system 100 is connected to the cooling plate
330.
[0055] A gas-diffusing ring 370 for uniformly diffusing the
reaction gas into the etching chamber 310 is disposed beneath an
edge of the upper electrode 320. An RF matcher 360 for applying an
RF power to the upper electrode 320 is disposed over the upper
electrode 310. A vacuum pump 350 for providing vacuum into the
etching chamber 310 is connected to a lower portion of the etching
chamber 310. A vacuum sensor 380 is attached to a sidewall of the
etching chamber 310.
Embodiment 4
[0056] Referring to FIG. 8, an etching apparatus 400 in accordance
with the present embodiment of the present invention includes an
etching chamber 410 into which a reaction gas for forming a plasma
is introduced. An electrostatic chuck 440 on which a wafer W is
disposed is mounted on a bottom face of the etching chamber 410. A
lower electrode (not shown) is disposed under the electrostatic
chuck 440. A first temperature controller system 100a is connected
to the electrostatic chuck 440. Here, the first temperature
controller system 100a has elements substantially identical to
those of the temperature controller system 100 in accordance with
the first embodiment. Thus, an illustration of the first
temperature controller system 100a is omitted.
[0057] An upper electrode 420 for applying a high voltage to the
reaction gas to form the plasma is disposed at an upper portion of
the etching chamber 410. A cooling plate 430 for cooling the upper
electrode 420 is mounted on the upper electrode 420. A second
temperature controller system 100b is connected to the cooling
plate 430. Here, the second temperature controller system 100b also
has elements substantially identical to those of the temperature
controller system 100 in accordance with the first embodiment.
Thus, an illustration of the second temperature controller system
100b is omitted.
[0058] A gas-diffusing ring 470 for uniformly diffusing the
reaction gas into the etching chamber 410 is disposed beneath an
edge of the upper electrode 420. An RF matcher 460 for applying an
RF power to the upper electrode 420 is disposed over the upper
electrode 410. A vacuum pump 450 for providing vacuum into the
etching chamber 410 is connected to a lower portion of the etching
chamber 410. A vacuum sensor 480 is attached to a sidewall of the
etching chamber 410.
[0059] According to the present invention, the valves may be
mounted on the diverged lines from one refrigerant bath so that the
temperatures of the object by regions may be readily controlled
using the temperature controller system that has only one bath as
previously described. Thus, the temperature controller system has
simple structure, and the manufacturing cost of the temperature
controller system can be decreased.
[0060] Also, the etching apparatus having the temperature
controller system may etch the wafer by a uniform thickness.
[0061] Having described the preferred embodiments of the present
invention, it is noted that modifications and variations can be
made by persons skilled in the art in light of the above teachings.
It is therefore to be understood that changes may be made in the
particular embodiment of the present invention disclosed which is
within the scope and the spirit of the invention outlined by the
appended claims.
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